TW202334061A - Material for sintered body, and sintered body - Google Patents

Material for sintered body, and sintered body Download PDF

Info

Publication number
TW202334061A
TW202334061A TW111129367A TW111129367A TW202334061A TW 202334061 A TW202334061 A TW 202334061A TW 111129367 A TW111129367 A TW 111129367A TW 111129367 A TW111129367 A TW 111129367A TW 202334061 A TW202334061 A TW 202334061A
Authority
TW
Taiwan
Prior art keywords
rare earth
sintered body
less
earth element
oxyfluoride
Prior art date
Application number
TW111129367A
Other languages
Chinese (zh)
Inventor
松倉賢人
重吉勇二
深川直樹
Original Assignee
日商日本釔股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日本釔股份有限公司 filed Critical 日商日本釔股份有限公司
Publication of TW202334061A publication Critical patent/TW202334061A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01FCOMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00Compounds of rare earth metals
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/50Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/553Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on fluorides
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64Burning or sintering processes
    • C04B35/645Pressure sintering

Abstract

This material for a sintered body contains an oxyfluoride of a rare earth element represented by REaObFc (where, RE is the rare earth element, b/a is at most 0.9, and c/a is at least 1.1), and has a molar ratio (F/RE molar ratio) of moles of fluorine (F) to moles of the rare earth element (RE) in the entirety of the material is 1.3 to 2.8, and the content of aluminum (Al) is at most 50 mass ppm. The content of silicon (Si) is preferably at most 500 mass ppm.

Description

燒結體用材料及燒結體Materials for sintered bodies and sintered bodies

本發明係關於一種包含稀土類元素之氟氧化物之燒結體用材料及燒結體。The present invention relates to a sintered body material containing an oxyfluoride of a rare earth element and a sintered body.

Y 2O 3等稀土類氧化物、YF 3等稀土類元素之氟化物(以下,有時記載為「稀土類氟化物」)及Y 5O 4F 7等稀土類元素之氟氧化物(以下,有時記載為「稀土類氟氧化物」)為具有耐蝕性之陶瓷,因此其皮膜或燒結體被用作半導體製造工藝中之保護材料。 尤其是關於包含稀土類氟氧化物之化合物,已知其化學上耐電漿性較高或可縮短半導體製造裝置之陳化處理時間。 Rare earth oxides such as Y 2 O 3 , fluorides of rare earth elements such as YF 3 (hereinafter sometimes referred to as "rare earth fluorides"), and oxyfluorides of rare earth elements such as Y 5 O 4 F 7 (hereinafter sometimes referred to as "rare earth fluorides") , sometimes described as "rare earth oxyfluoride") is a corrosion-resistant ceramic, so its film or sintered body is used as a protective material in the semiconductor manufacturing process. In particular, compounds containing rare earth oxyfluorides are known to have high chemical plasma resistance or to shorten the aging treatment time of semiconductor manufacturing equipment.

據專利文獻1所載,藉由使用稀土類元素之氟氧化物,使用其熔射顆粒所製作之熔射膜對於F系電漿及Cl系電漿之兩者顯示出優異之耐蝕性,而使得電漿蝕刻時因蝕刻作用而被刮削並飛散之粒子得以減少。According to Patent Document 1, by using oxyfluoride of a rare earth element, the sprayed film produced using its sprayed particles shows excellent corrosion resistance to both F-based plasma and Cl-based plasma, and This reduces particles scraped and scattered due to etching during plasma etching.

另一方面,如專利文獻2所示,亦研究藉由使用較熔射膜更加緻密之燒結體而提昇阻隔鹵素系腐蝕氣體之功能。 進而,於專利文獻3中,作為使用包含稀土類元素之氟氧化物(Ln-O-F)之顆粒之燒結用材料,揭示有一種含有包含稀土類元素之氟氧化物之顆粒之燒結用材料,其振實法視密度處於特定範圍且具有特定粒徑,使用該燒結用材料所製造之燒結體於氯系電漿中之耐蝕性較高且緻密。 先前技術文獻 專利文獻 On the other hand, as shown in Patent Document 2, studies have also been conducted on improving the barrier function of halogen-based corrosive gases by using a sintered body that is denser than a melt-sprayed film. Furthermore, Patent Document 3 discloses a sintering material using particles of oxyfluoride (Ln-O-F) containing rare earth elements, which contains particles of oxyfluoride containing rare earth elements. According to the tapping method, the density is within a specific range and has a specific particle size. The sintered body produced using the material for sintering has high corrosion resistance and is dense in chlorine-based plasma. Prior technical literature patent documents

專利文獻1:US2015/096462A1 專利文獻2:US2017/0305796 A1 專利文獻3:US2018/0016193 A1 Patent Document 1: US2015/096462A1 Patent Document 2: US2017/0305796 A1 Patent document 3: US2018/0016193 A1

然而,於使用先前之稀土類氟氧化物之燒結體用材料所製作之稀土類氟氧化物之燒結體中,於乾式蝕刻所使用之各種電漿或濕式蝕刻所使用之藥液中之耐蝕性有改善之餘地。However, in the rare earth oxyfluoride sintered body produced by using the previous rare earth oxyfluoride sintered body material, the corrosion resistance in various plasmas used in dry etching or chemical liquids used in wet etching There is room for improvement in sex.

因此,本發明之課題在於提供一種可消除上述先前技術所具有之缺點之燒結體用材料及燒結體。Therefore, an object of the present invention is to provide a sintered body material and a sintered body that can eliminate the above-mentioned shortcomings of the prior art.

關於使用稀土類氟氧化物之燒結體用材料及燒結體,本發明人對有效提高於乾式蝕刻所使用之電漿或濕式蝕刻所使用之藥液中之耐蝕性之構成進行了銳意研究。結果發現,藉由使用F/RE莫耳比處於特定範圍且包含特定組成之稀土類元素之氟氧化物之燒結體用材料,且鋁(Al)之含量為50 ppm以下之材料,所獲得之燒結體緻密且硬度較高,並且具有優異之耐化學品性及耐電漿性。Regarding materials for sintered bodies and sintered bodies using rare earth oxyfluoride, the present inventors have conducted intensive research on structures that effectively improve the corrosion resistance in plasma used for dry etching or chemical solutions used for wet etching. As a result, it was found that by using a material for the sintered body that has an F/RE molar ratio within a specific range and contains an oxyfluoride of a rare earth element with a specific composition, and the aluminum (Al) content is 50 ppm or less, the obtained The sintered body is dense and hard, and has excellent chemical resistance and plasma resistance.

因此,本發明提供以下之[1]~[14]。 [1]一種燒結體用材料,其含有REaObFc(其中,RE為稀土類元素,b/a為0.9以下,c/a為1.1以上)所表示之稀土類元素之氟氧化物,材料整體中之氟元素(F)之莫耳數相對於稀土類元素(RE)之莫耳數之比(F/RE莫耳比)為1.3以上2.8以下,且鋁(Al)之含量為50質量ppm以下。 [2]如[1]中所記載之燒結體用材料,其中矽(Si)之含量為500質量ppm以下。 [3]如[1]或[2]中所記載之燒結體用材料,其於使用壓汞法所測得之細孔徑分佈中,在細孔徑0.05 μm以上0.5 μm以下之範圍及細孔徑5 μm以上50 μm以下之範圍內分別具有波峰,細孔徑0.05 μm以上0.5 μm以下之細孔容積為0.1 mL/g以上,且細孔徑5 μm以上50 μm以下之細孔容積為0.1 mL/g以上。 [4]如[1]至[3]中任一項所記載之燒結體用材料,其中於XRD(X ray diffraction,X射線繞射)分析中,除稀土類元素之氟氧化物以外所包含之結晶相實質上僅由REF 3所表示之稀土類元素之氟化物構成。 [5]如[1]至[4]中任一項所記載之燒結體用材料,其中REaObFc為選自RE 7O 6F 9、RE 6O 5F 8、RE 5O 4F 7、RE 4O 3F 6、RE 3O 2F 5及RE 2OF 4中之至少一種。 [6]如[1]至[5]中任一項所記載之燒結體用材料,其中稀土類元素之氟氧化物之稀土類元素RE為選自Sc、Y、La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb及Lu中之一種或兩種以上。 [7]如[1]至[6]中任一項所記載之燒結體用材料,其灼燒減量為10質量%以下。 [8]如[1]至[7]中任一項所記載之燒結體用材料,其BET比表面積為2 m 2/g以上10 m 2/g以下。 [9]如[1]至[8]中任一項所記載之燒結體用材料,其豪斯納比(振實密度/鬆密度)為1.0以上1.3以下。 [10]一種燒結體,其含有REaObFc(其中,RE為稀土類元素,b/a為0.9以下,c/a為1.1以上)所表示之稀土類元素之氟氧化物,燒結體整體中之氟元素(F)之莫耳數相對於稀土類元素(RE)之莫耳數之比(F/RE莫耳比)為1.3以上2.8以下,且鋁(Al)之含量為50質量ppm以下。 [11]如[10]中所記載之燒結體,其中矽(Si)之含量為500質量ppm以下。 [12]如[10]或[11]中所記載之燒結體,其中除稀土類元素之氟氧化物以外所包含之結晶相實質上僅由REF 3所表示之稀土類元素之氟化物構成。 [13]如[10]至[12]中任一項所記載之燒結體,其維氏硬度為3 GPa以上。 [14]一種燒結體之製造方法,其對如[1]~[9]中任一項所記載之燒結體用材料進行燒結。 Therefore, the present invention provides the following [1] to [14]. [1] A material for sintered bodies containing an oxyfluoride of a rare earth element represented by REaObFc (where RE is a rare earth element, b/a is 0.9 or less, and c/a is 1.1 or more), and in the entire material The ratio of the molar number of the fluorine element (F) to the molar number of the rare earth element (RE) (F/RE molar ratio) is 1.3 or more and 2.8 or less, and the aluminum (Al) content is 50 mass ppm or less. [2] The material for sintered bodies according to [1], wherein the content of silicon (Si) is 500 ppm by mass or less. [3] The material for sintered bodies as described in [1] or [2], which has a pore diameter distribution measured using a mercury porosimetry in the range of 0.05 μm to 0.5 μm and a pore diameter of 5 There are peaks in the range of 50 μm to 50 μm. The pore volume of pore diameters of 0.05 μm to 0.5 μm is 0.1 mL/g or more, and the pore volume of 5 μm to 50 μm is 0.1 mL/g or more. . [4] The material for sintered bodies according to any one of [1] to [3], which contains, in XRD (X-ray diffraction, X-ray diffraction) analysis, in addition to oxyfluoride of rare earth elements The crystalline phase is essentially composed only of fluorides of rare earth elements represented by REF 3 . [5] The material for sintered bodies according to any one of [1] to [4], wherein REaObFc is selected from RE 7 O 6 F 9 , RE 6 O 5 F 8 , RE 5 O 4 F 7 , RE At least one of 4 O 3 F 6 , RE 3 O 2 F 5 and RE 2 OF 4 . [6] The material for sintered bodies according to any one of [1] to [5], wherein the rare earth element RE of the rare earth element oxyfluoride is selected from the group consisting of Sc, Y, La, Ce, Pr, and Nd , one or more of Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. [7] The material for sintered bodies according to any one of [1] to [6], which has a loss on ignition of 10 mass % or less. [8] The material for sintered bodies according to any one of [1] to [7], which has a BET specific surface area of 2 m 2 /g or more and 10 m 2 /g or less. [9] The material for sintered bodies according to any one of [1] to [8], which has a Hausner ratio (tap density/bulk density) of 1.0 or more and 1.3 or less. [10] A sintered body containing an oxyfluoride of a rare earth element represented by REaObFc (where RE is a rare earth element, b/a is 0.9 or less, and c/a is 1.1 or more), and fluorine in the entire sintered body The ratio of the molar number of the element (F) to the molar number of the rare earth element (RE) (F/RE molar ratio) is 1.3 or more and 2.8 or less, and the aluminum (Al) content is 50 mass ppm or less. [11] The sintered body according to [10], wherein the silicon (Si) content is 500 ppm by mass or less. [12] The sintered body as described in [10] or [11], in which the crystal phase other than the oxyfluoride of the rare earth element is substantially composed only of the fluoride of the rare earth element represented by REF 3 . [13] The sintered body according to any one of [10] to [12], having a Vickers hardness of 3 GPa or more. [14] A method for producing a sintered body, which includes sintering the material for a sintered body according to any one of [1] to [9].

以下,基於其較佳實施方式對本發明進行說明。 首先,對燒結體用材料進行說明。 本發明之燒結體用材料之特徵在於:含有REaObFc(其中,RE為稀土類元素,b/a為0.9以下,c/a為1.1以上,以下,亦僅記載為「REaObFc」)所表示之稀土類元素之氟氧化物,且材料整體中之氟元素(F)之莫耳數相對於稀土類元素(RE)之莫耳數之比(以下,亦僅記載為「F/RE莫耳比」)為1.3以上2.8以下。 Hereinafter, the present invention will be described based on its preferred embodiments. First, the materials for sintered bodies will be described. The material for sintered bodies of the present invention is characterized by containing rare earth represented by REaObFc (where RE is a rare earth element, b/a is 0.9 or less, c/a is 1.1 or more, and is also referred to as "REaObFc" below). Oxyfluorides of similar elements, and the ratio of the molar number of fluorine element (F) to the molar number of rare earth elements (RE) in the entire material (hereinafter, also referred to as "F/RE molar ratio" ) is above 1.3 and below 2.8.

本發明人對使用稀土類元素之氟氧化物之燒結體於乾式蝕刻所使用之電漿或濕式蝕刻所使用之藥液中之耐蝕性進行了研究,結果得知如下問題:含有REaObFc,且F/RE莫耳比為1.3以上2.8以下之燒結體用材料不易獲得緻密且硬度較高之燒結體,因此耐電漿性或耐化學品性不易提昇。 並且,對其理由進行了研究,結果進一步得知以下情況。 The inventors of the present invention studied the corrosion resistance of a sintered body using an oxyfluoride of a rare earth element in a plasma used for dry etching or a chemical liquid used for wet etching. As a result, the following problems were found: REaObFc is contained, and Materials for sintered bodies whose F/RE molar ratio is 1.3 or more and 2.8 or less are difficult to obtain dense and hard sintered bodies, so it is difficult to improve plasma resistance or chemical resistance. Furthermore, we conducted research on the reasons and found out the following.

先前,製作REaObFc等稀土類元素之氟氧化物時,使用稀土類氟化物、氫氟酸(以下,亦稱為「氫氟酸」)、氟化銨或酸性氟化銨等作為氟源。例如,向稀土類元素之氧化物中添加氫氟酸而製成稀土類元素之氟化物之前驅物,對其進行焙燒,從而獲得稀土類元素之氟化物(REF 3)。又,藉由對稀土類元素之氟化物進行焙燒,或將稀土類元素之氟化物與稀土類元素之氧化物加以混合後進行焙燒,而獲得稀土類元素之氟氧化物。 一般而言,上述各焙燒步驟通常利用電爐進行高溫焙燒,但此時廣泛使用氧化鋁或莫來石等含有Al或Al及Si之多孔質匣缽。氧化鋁或莫來石等含有Al或Al及Si之多孔質匣缽因廉價且耐久性較高而通用。 Previously, when producing oxyfluorides of rare earth elements such as REaObFc, rare earth fluorides, hydrofluoric acid (hereinafter also referred to as "hydrofluoric acid"), ammonium fluoride or acidic ammonium fluoride were used as fluorine sources. For example, hydrofluoric acid is added to an oxide of a rare earth element to prepare a fluoride precursor of the rare earth element, and the precursor is calcined to obtain a fluoride of the rare earth element (REF 3 ). In addition, the oxyfluoride of the rare earth element is obtained by calcining the fluoride of the rare earth element, or by mixing the fluoride of the rare earth element and the oxide of the rare earth element and then calcining. Generally speaking, each of the above-mentioned baking steps is usually performed at high temperature using an electric furnace. However, in this case, porous saggers containing Al, such as alumina or mullite, or Al and Si are widely used. Porous saggers containing Al or Al and Si, such as alumina or mullite, are commonly used because they are cheap and highly durable.

本發明人發現,使用氧化鋁或莫來石等含有Al或Al及Si之多孔質匣缽並經由對稀土類元素之氟化物或其前驅物進行高溫焙燒之步驟所製作之稀土類元素之氟氧化物含有許多Al或Al及Si。並且,關於其理由,推測是否係於高溫下對稀土類元素之氟化物或其前驅物之氟源進行加熱時會產生許多氟氣,與匣缽中之Al成分或Si成分發生反應而包含於稀土類元素之氟氧化物中。The present inventors have found that fluorine of rare earth elements is produced by using a porous sagger containing Al or Al and Si such as alumina or mullite and calcining the fluoride of rare earth elements or its precursor at high temperature. The oxide contains a lot of Al or Al and Si. Furthermore, it is speculated that the reason for this is that when the fluoride of rare earth elements or the fluorine source of its precursor is heated at high temperature, a large amount of fluorine gas is generated, which reacts with the Al component or Si component in the sagger and is contained in the sagger. In fluoride oxides of rare earth elements.

進而,本發明人使用氧化釔匣缽、氧化鋯匣缽或鉑皿等幾乎不含Al、尤其是Al及Si之材質之匣缽,於某低溫溫度區域進行焙燒,藉此成功地大幅度抑制氟氣產生,製作Al、尤其是Al及Si之含有率較少之含有REaObFc之燒結體用材料。Furthermore, the present inventors used yttrium oxide saggers, zirconia saggers, or platinum dishes, which are made of materials that contain almost no Al, especially Al and Si, and fired them in a certain low-temperature region, thereby successfully achieving a significant reduction in Fluorine gas is generated, and a material for producing a sintered body containing REaObFc containing Al, especially Al and Si, is small.

令人驚訝的是,可知Al、尤其是Al及Si之含有率較少之含有REaObFc之燒結體用材料若製成燒結體,則緻密且硬度較高。本發明人認為其原因在於,燒結時隨著溫度上升,Al成分或Si成分與F成分發生反應而於晶界間形成異相或成為揮發成分,藉此抑制了燒結體上形成開口孔或閉口孔。 又,若燒結體用材料中之Al及Si之含量為特定值以下,則會使所獲得之燒結體之最表面之Al及Si減少,就此方面而言,發明人認為亦有可能容易進一步提昇於氟系腐蝕氣體或氟系藥液中之耐蝕性。 Surprisingly, it was found that a sintered body containing REaObFc-containing material with a low content of Al, especially Al and Si, is dense and has high hardness. The inventor believes that the reason is that as the temperature rises during sintering, the Al component or the Si component reacts with the F component to form a different phase between the grain boundaries or become a volatile component, thereby suppressing the formation of open or closed pores in the sintered body. . In addition, if the content of Al and Si in the material for sintered body is less than a specific value, the Al and Si on the outermost surface of the obtained sintered body will be reduced. In this regard, the inventor believes that it is possible to further increase the content easily. Corrosion resistance in fluorine-based corrosive gases or fluorine-based chemical liquids.

尤其是,先前包含REaObFc且F/RE莫耳比為1.3以上2.8以下之燒結體用材料有所獲得之燒結體不易獲得緻密度或硬度之傾向。該組成之燒結體用材料包含許多氟成分。因此,認為上述情況之原因之一在於由於先前該組成之燒結體用材料中存在Al成分或Si成分,故而燒結時該等異相與氟成分發生反應,而容易產生開口孔或閉口孔。於本發明中,藉由使Al之含量、尤其是Al及Si之含量較少,可有效抑制開口孔或閉口孔之生成,藉由包含REaObFc,可有效發揮於電漿或藥液中之耐蝕性。 另一方面,若使用稀土類氟氧化物僅由REOF(RE 1O 1F 1)構成且整體之F/RE莫耳比為1.0以上2.8以下之燒結體用材料來製造燒結體,則有時會因減少燒結體用材料之Al之含量、尤其是Al及Si之含量而不易充分獲得提昇緻密度或硬度之效果。關於其理由,有如下推測。對於REOF(RE 1O 1F 1)、例如YOF,藉由TG-DTA(Thermo-Gravimetric/Differential Thermal analysis,示差熱-熱重量同步測定)而於570℃附近觀察到可逆之相轉移。因此,認為原因在於:相較於含有Al成分或Si成分,該相轉移之影響成為導致微小龜裂或氣孔之主要原因。 相對於此,於本發明之包含REaObFc且整體之F/RE莫耳比為1.3以上2.8以下之燒結體用材料中,例如包含Y 5O 4F 7之燒結體用材料並未藉由TG-DTA而觀察到可逆之相轉移,因Al之含量、尤其是Al及Si之含量較少而充分發揮提昇硬度及緻密度之效果。就表現出該等效果之方面而言,認為包含以Y 5O 4F 7等為代表之REaObFc且整體之F/RE莫耳比為1.3以上2.8以下之燒結體用材料特別具有技術意義。 In particular, conventional materials for sintered bodies containing REaObFc and having an F/RE molar ratio of 1.3 to 2.8 tend to produce sintered bodies that do not easily gain density or hardness. The material for sintered bodies of this composition contains many fluorine components. Therefore, it is considered that one of the reasons for the above situation is that since the Al component or Si component previously existed in the sintered body material of this composition, these different phases react with the fluorine component during sintering, and open pores or closed pores are easily generated. In the present invention, by reducing the content of Al, especially the content of Al and Si, the formation of open pores or closed pores can be effectively suppressed. By including REaObFc, the corrosion resistance in plasma or chemical liquid can be effectively exerted. sex. On the other hand, when a sintered body is produced using a sintered body material in which the rare earth oxyfluoride is composed only of REOF (RE 1 O 1 F 1 ) and the overall F/RE molar ratio is 1.0 or more and 2.8 or less, there may be cases where By reducing the Al content of the sintered body material, especially the Al and Si content, it is difficult to fully obtain the effect of increasing density or hardness. The reason for this is speculated as follows. For REOF (RE 1 O 1 F 1 ), such as YOF, a reversible phase transition is observed near 570°C by TG-DTA (Thermo-Gravimetric/Differential Thermal analysis, differential thermogravimetric analysis). Therefore, it is considered that the reason is that compared with containing an Al component or a Si component, the influence of this phase transition becomes a main cause of micro cracks and pores. On the other hand, in the sintered body material containing REaObFc and having an overall F/RE molar ratio of 1.3 or more and 2.8 or less, for example, the sintered body material containing Y 5 O 4 F 7 is not formed by TG- Reversible phase transfer was observed with DTA. Due to the low content of Al, especially the low content of Al and Si, the effect of increasing hardness and density is fully exerted. In terms of exhibiting these effects, materials for sintered bodies containing REaObFc represented by Y 5 O 4 F 7 and the like and having an overall F/RE molar ratio of 1.3 to 2.8 are considered to be of particular technical significance.

為了使本發明之上述效果更加優異,REaObFc中之b/a較佳為0.5以上0.9以下,另一方面,c/a較佳為1.1以上2.0以下。藉由使b/a為0.9以下,且使c/a為1.1以上,為不含REOF(RE 1O 1F 1)組成之組成,故而不產生可逆之相轉移。藉此,可使由Al之含量、尤其是Al及Si之含量較低所帶來之硬度或緻密度之提昇效果較大。又,若b/a為0.5以上,c/a為2.0以下,則就獲得容易性之方面而言較佳。 就該等方面而言,REaObFc中之b/a進而較佳為0.6以上0.8以下,c/a進而較佳為1.3以上1.7以下。 再者,通常3a=2b+c。 In order to make the above-mentioned effect of the present invention more excellent, b/a in REaObFc is preferably 0.5 or more and 0.9 or less. On the other hand, c/a is preferably 1.1 or more and 2.0 or less. By setting b/a to be 0.9 or less and c/a to be 1.1 or more, the composition does not contain REOF (RE 1 O 1 F 1 ), so reversible phase transition does not occur. In this way, the hardness or density improvement effect caused by the lower Al content, especially the lower Al and Si content, can be greater. Moreover, it is preferable in terms of ease of acquisition when b/a is 0.5 or more and c/a is 2.0 or less. From these points of view, b/a in REaObFc is further preferably 0.6 or more and 0.8 or less, and c/a is further preferably 1.3 or more and 1.7 or less. Furthermore, usually 3a=2b+c.

尤其是,就可使由Al含量或Si含量較低所帶來之硬度或緻密度之提昇效果較大之方面而言,REaObFc較佳為選自RE 7O 6F 9、RE 6O 5F 8、RE 5O 4F 7、RE 4O 3F 6、RE 3O 2F 5及RE 2OF 4中之至少一種,最佳為RE 5O 4F 7In particular, REaObFc is preferably selected from the group consisting of RE 7 O 6 F 9 and RE 6 O 5 F in order to achieve a greater effect of increasing the hardness or density due to the low Al content or Si content. 8. At least one of RE 5 O 4 F 7 , RE 4 O 3 F 6 , RE 3 O 2 F 5 and RE 2 OF 4 , preferably RE 5 O 4 F 7 .

藉由使燒結體用材料中之F/RE莫耳比為1.3以上,可使由Al含量或Si含量較低所帶來之硬度或緻密度之提昇效果較大。又,藉由使燒結體用材料中之F/RE莫耳比為2.8以下,有可控制為單一組成且具有解理性之REF 3之含量,容易製作燒結體之優點。就該觀點而言,燒結體用材料中之F/RE莫耳比較佳為1.4以上2.6以下,特佳為1.5以上2.4以下。F/RE莫耳比可藉由下述實施例中所記載之方法來測定。 By setting the F/RE molar ratio of the material for sintered bodies to 1.3 or more, the effect of increasing the hardness or density due to low Al content or Si content can be greater. Furthermore, by setting the F/RE molar ratio in the material for the sintered body to 2.8 or less, the content of REF 3 having a single composition and cleavage properties can be controlled, making it easier to produce a sintered body. From this point of view, the F/RE molar ratio of the material for sintered bodies is preferably 1.4 or more and 2.6 or less, and particularly preferably 1.5 or more and 2.4 or less. The F/RE molar ratio can be measured by the method described in the following examples.

藉由使燒結體用材料中之Al含量為50質量ppm以下,所獲得之燒結體較硬且緻密,可獲得對電漿或藥液處理之耐蝕性。若Al含量為1質量ppm以上,則有就製造中之生產性而言有利,極微量之Al作為燒結助劑發揮作用之優點,故而較佳。就該等方面而言,燒結體用材料中之Al含量更佳為1質量ppm以上35質量ppm以下,進而較佳為1質量ppm以上25質量ppm以下。By setting the Al content in the material for the sintered body to 50 mass ppm or less, the obtained sintered body is hard and dense, and corrosion resistance to plasma or chemical liquid treatment can be obtained. If the Al content is 1 mass ppm or more, it is advantageous in terms of productivity in manufacturing and a very small amount of Al functions as a sintering aid, so it is preferable. From these points of view, the Al content in the material for sintered bodies is more preferably from 1 mass ppm to 35 mass ppm, and further preferably from 1 mass ppm to 25 mass ppm.

進而,藉由使燒結體用材料中之Si含量為500質量ppm以下,所獲得之燒結體更加硬且緻密,可獲得對電漿或藥液處理之耐蝕性,故而較佳。若Si含量為1質量ppm以上,則有就製造中之生產性而言有利,極微量之Si作為燒結助劑發揮作用之優點。 就該等方面而言,燒結體用材料中之Si含量更佳為1質量ppm以上350質量ppm以下,進而較佳為1質量ppm以上200質量ppm以下。 Furthermore, by setting the Si content in the material for the sintered body to 500 ppm by mass or less, the obtained sintered body is harder and denser, and corrosion resistance to plasma or chemical liquid treatment can be obtained, which is preferable. If the Si content is 1 mass ppm or more, it is advantageous in terms of productivity in manufacturing, and there is an advantage that a very trace amount of Si functions as a sintering aid. From these points of view, the Si content in the material for sintered bodies is more preferably from 1 mass ppm to 350 mass ppm, and further preferably from 1 mass ppm to 200 mass ppm.

Al含量及Si含量可藉由下述實施例中所記載之方法來測定。The Al content and Si content can be measured by the methods described in the following examples.

就燒結體用材料之獲得容易性或化學穩定性之方面而言,稀土類元素之氟氧化物之稀土類元素RE較佳為選自除作為並非天然存在之放射性元素之Pm以外之Sc、Y、La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb及Lu中之一種或兩種以上,更佳為選自Y、La、Gd、Er、Yb、Lu中之一種或兩種以上,進而較佳為Y、Gd、Yb,最佳為Y。In terms of ease of acquisition or chemical stability of the material for the sintered body, the rare earth element RE of the oxyfluoride of the rare earth element is preferably selected from Sc and Y other than Pm which is a non-naturally occurring radioactive element. , one or more of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, preferably selected from Y, La, Gd, Er, Yb One or more of Lu, more preferably Y, Gd, Yb, and most preferably Y.

於本發明中,於燒結體用材料中除包含REaObFc以外還混合存在有REF 3所表示之稀土類氟化物之情形時,與僅包含REaObFc之情況相比,由燒結體用材料所獲得之燒結體之硬度進一步提昇,故而較佳。本發明人認為其原因在於因存在稀土類氟化物而適當地抑制了晶粒生長,成為具有耐物理負載之適當之晶粒尺寸之燒結體。 In the present invention, when the rare earth fluoride represented by REF 3 is mixed with the material for sintered body in addition to REaObFc, compared with the case where only REaObFc is contained, the sintered body obtained from the material for sintered body is The hardness of the body is further improved, so it is better. The present inventors believe that the reason for this is that the presence of the rare earth fluoride appropriately suppresses the grain growth, resulting in a sintered body having an appropriate grain size that can withstand physical load.

於燒結體用材料包含稀土類元素之氟化物之情形時,作為該稀土類元素RE,可例舉與上文中作為氟氧化物之稀土類元素RE而例舉者相同之元素,就燒結體用材料之獲得容易性或化學穩定性之方面而言,較佳為選自除作為並非天然存在之放射性元素之Pm以外之Sc、Y、La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb及Lu中之一種或兩種以上,更佳為選自Y、La、Gd、Er、Yb、Lu中之一種或兩種以上,進而較佳為Y、Gd、Yb,最佳為Y。 於本發明之燒結體用材料含有REaObFc及REF 3所表示之稀土類元素之氟化物之情形時,REaObFc及REF 3之稀土類元素RE可相同,亦可不同。 When the material for the sintered body contains a fluoride of a rare earth element, the rare earth element RE may be the same element as the rare earth element RE exemplified above as an oxyfluoride. For the sintered body, In terms of ease of acquisition or chemical stability of the material, it is preferable to be selected from Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, and Tb except Pm, which is a radioactive element that is not naturally occurring. , Dy, Ho, Er, Tm, Yb and Lu, one or more of them, more preferably one or more of Y, La, Gd, Er, Yb, Lu, more preferably Y, Gd, Yb, the best is Y. When the material for sintered body of the present invention contains REaObFc and the fluoride of the rare earth element represented by REF 3 , the rare earth element RE represented by REaObFc and REF 3 may be the same or different.

本發明之燒結體用材料較佳為於XRD分析中,除稀土類元素之氟氧化物以外所包含之結晶相實質上僅由REF 3所表示之稀土類元素之氟化物構成。「除稀土類元素之氟氧化物以外所包含之結晶相實質上僅由REF 3所表示之稀土類元素之氟化物構成」較佳為意指於使用CuKα線並以2θ=20~60°作為掃描範圍之XRD分析中,源自除稀土類元素之氟氧化物及REF 3所表示之稀土類元素之氟化物以外之化合物(以下,有時亦記載為「其他成分」)的結晶相之主峰之峰高相對於源自REaObFc之結晶相之主峰之峰高為10%以下,更佳為5%以下,進而較佳為3%以下,最佳為1%以下。 因此,於上述XRD分析中,源自除RE 2O 3所表示之稀土類元素之氧化物之化合物的結晶相之主峰之峰高較佳為相對於源自REaObFc之結晶相之主峰之峰高為10%以下,更佳為5%以下,進而較佳為3%以下,最佳為1%以下。 The material for the sintered body of the present invention is preferably one in which the crystalline phase other than the oxyfluoride of the rare earth element is substantially composed only of the fluoride of the rare earth element represented by REF 3 in XRD analysis. "Crystal phases other than oxyfluorides of rare earth elements are essentially composed only of fluorides of rare earth elements represented by REF 3 " preferably means that CuKα line is used and 2θ=20 to 60° is used. In the XRD analysis of the scanning range, the main peak derived from the crystal phase of compounds other than oxyfluorides of rare earth elements and fluorides of rare earth elements represented by REF 3 (hereinafter, sometimes also described as "other components") The peak height relative to the peak height of the main peak derived from the crystal phase of REaObFc is 10% or less, more preferably 5% or less, further preferably 3% or less, most preferably 1% or less. Therefore, in the above XRD analysis, the peak height of the main peak of the crystal phase derived from the compound of the oxide of the rare earth element other than RE 2 O 3 is preferably relative to the peak height of the main peak of the crystal phase derived from REaObFc It is 10% or less, more preferably 5% or less, still more preferably 3% or less, most preferably 1% or less.

進而,在本發明之燒結體用材料於XRD分析(具體而言,為使用CuKα線並以2θ=20~60°作為掃描範圍之XRD分析)中,觀察到源自除REaObFc以外之稀土類元素之氟氧化物之波峰之情形時,該波峰之峰高較佳為相對於源自REaObFc之結晶相之主峰之峰高為10%以下,更佳為5%以下。Furthermore, in the XRD analysis of the material for sintered bodies of the present invention (specifically, XRD analysis using CuKα line and 2θ=20 to 60° as the scanning range), it was observed that the material originates from rare earth elements other than REaObFc. In the case of the peak of the oxyfluoride, the peak height of the peak is preferably 10% or less, more preferably 5% or less, relative to the peak height of the main peak derived from the crystal phase of REaObFc.

本發明之燒結體用材料較佳為以REaObFc作為主相。此處,以REaObFc作為主相意指於使用CuKα線並以2θ=20~60°作為掃描範圍之XRD分析中,源自REaObFc之波峰為最大高度之波峰。The material for sintered bodies of the present invention preferably contains REaObFc as the main phase. Here, using REaObFc as the main phase means that in XRD analysis using CuKα line and 2θ=20 to 60° as the scanning range, the peak originating from REaObFc is the peak with the maximum height.

又,即便於本發明之燒結體用材料不以REaObFc作為主相之情形時,REaObFc之主峰之峰高相對於REF 3所表示之稀土類元素之氟化物之結晶相之主峰之高度的比率亦較佳為50%以上,更佳為80%以上。 Furthermore, even when the material for sintered bodies of the present invention does not have REaObFc as the main phase, the ratio of the peak height of the main peak of REaObFc to the height of the main peak of the crystalline phase of the rare earth element fluoride represented by REF 3 is also More preferably, it is 50% or more, and more preferably, it is 80% or more.

Y 5O 4F 7之主峰通常於2θ=28.11°被觀察到。又,Y 6O 5F 8之主峰通常於2θ=28.14°被觀察到。又,Y 7O 6F 9之主峰通常於2θ=28.14°被觀察到。 La 10O 7F 16之主峰通常於2θ=26.52°被觀察到。 Gd 4O 3F 6之主峰通常於2θ=27.59°被觀察到。 Er 5O 4F 7之主峰通常於2θ=28.25°被觀察到。 Yb 5O 4F 7之主峰通常於2θ=28.50°被觀察到。 Lu 7O 6F 9之主峰通常於2θ=28.60°被觀察到。 又,YF 3之主峰通常於2θ=27.88°被觀察到。 LaF 3之主峰通常於2θ=27.60°被觀察到。 GdF 3之主峰通常於2θ=27.54°被觀察到。 ErF 3之主峰通常於2θ=27.95°被觀察到。 YbF 3之主峰通常於2θ=27.98°被觀察到。 LuF 3之主峰通常於2θ=27.97°被觀察到。 其中,於觀察到REaObFc及REF 3之情形時,如Y 5O 4F 7與YF 3、Gd 4O 3F 6與GdF 3、Er 5O 4F 7與ErF 3般藉由組成之組合而使主峰彼此於較近位置(2θ之差為0.4°內)被檢測出之情況可藉由下述方式來測定。 具體而言,可分別使用相當於下述特定面之波峰之強度(I S)除以該面之相對強度(主峰之強度為100,PDF(Portable Document Format,可攜式文件格式)卡中所記載之強度:I T)而得之數值作為主峰之強度(I M)。 ※I M=I S/I T×100 Y 5O 4F 7之(0100)面之波峰通常於2θ=32.29°被觀察到,相對於主峰之相對強度為23.4%。 Gd 4O 3F 6之(100)面之波峰通常於2θ=31.77°被觀察到,相對於主峰之相對強度為14.5%。 Er 5O 4F 7之(171)面之波峰通常於2θ=32.48°被觀察到,相對於主峰之相對強度為14.2%。 REF 3之特定波峰可設為(020)面之波峰。 例如,YF 3之(020)面之波峰通常於2θ=25.98°被觀察到,相對於主峰之相對強度為67.6%。 GdF 3之(020)面之波峰通常於2θ=25.47°被觀察到,相對於主峰之相對強度為60.0%。 ErF 3之(020)面之波峰通常於2θ=26.03°被觀察到,相對於主峰之相對強度為75.0%。 上述波峰位置之誤差較佳為±0.05°以內,更佳為±0.03°以內,進而較佳為±0.02°以內,最佳為±0.01°以內。 關於本說明書中所記載之REaObFc與REF 3之主峰比之各記載內容,可為如下任一種情形:當使用主峰本身之峰高(強度)來計算主峰高度比時符合;當使用如上所述將並非主峰之波峰之峰高(強度)除以將PDF卡中所記載之主峰之高度(強度)設為100時之相對強度而獲得之主峰換算高度來計算主峰高度比時符合,於假設兩種方法均可測定之情形時,只要於一種情形時與本說明書中所記載之比率符合,則即便於另一種情形時不符合,亦視為符合。 The main peak of Y 5 O 4 F 7 is usually observed at 2θ=28.11°. In addition, the main peak of Y 6 O 5 F 8 is usually observed at 2θ=28.14°. In addition, the main peak of Y 7 O 6 F 9 is usually observed at 2θ=28.14°. The main peak of La 10 O 7 F 16 is usually observed at 2θ=26.52°. The main peak of Gd 4 O 3 F 6 is usually observed at 2θ=27.59°. The main peak of Er 5 O 4 F 7 is usually observed at 2θ=28.25°. The main peak of Yb 5 O 4 F 7 is usually observed at 2θ=28.50°. The main peak of Lu 7 O 6 F 9 is usually observed at 2θ=28.60°. In addition, the main peak of YF 3 is usually observed at 2θ=27.88°. The main peak of LaF 3 is usually observed at 2θ=27.60°. The main peak of GdF 3 is usually observed at 2θ=27.54°. The main peak of ErF 3 is usually observed at 2θ=27.95°. The main peak of YbF 3 is usually observed at 2θ=27.98°. The main peak of LuF 3 is usually observed at 2θ=27.97°. Among them, when REaObFc and REF 3 are observed, such as Y 5 O 4 F 7 and YF 3 , Gd 4 O 3 F 6 and GdF 3 , Er 5 O 4 F 7 and ErF 3, they are formed by a combination of compositions. The detection of the main peaks at positions close to each other (the difference in 2θ is within 0.4°) can be measured by the following method. Specifically, the intensity ( IS ) of the wave peak corresponding to the following specific surface can be divided by the relative intensity of the surface (the intensity of the main peak is 100, and the intensity in the PDF (Portable Document Format, Portable Document Format) card The recorded intensity: I T ) is the value obtained as the intensity of the main peak (I M ). ※I M =I S /I T ×100 Y 5 O 4 F 7 The peak of the (0100) plane is usually observed at 2θ = 32.29°, and its relative intensity relative to the main peak is 23.4%. The peak of the (100) plane of Gd 4 O 3 F 6 is usually observed at 2θ=31.77°, and its relative intensity relative to the main peak is 14.5%. The peak of the (171) plane of Er 5 O 4 F 7 is usually observed at 2θ=32.48°, and its relative intensity relative to the main peak is 14.2%. The specific peak of REF 3 can be set to the peak of the (020) plane. For example, the peak of the (020) plane of YF 3 is usually observed at 2θ=25.98°, and its relative intensity relative to the main peak is 67.6%. The peak of the (020) plane of GdF 3 is usually observed at 2θ=25.47°, and its relative intensity relative to the main peak is 60.0%. The peak of the (020) plane of ErF 3 is usually observed at 2θ=26.03°, and its relative intensity relative to the main peak is 75.0%. The error of the above-mentioned wave crest position is preferably within ±0.05°, more preferably within ±0.03°, further preferably within ±0.02°, and most preferably within ±0.01°. Regarding the content of the main peak ratio of REaObFc and REF 3 recorded in this specification, it can be in any of the following situations: when the peak height (intensity) of the main peak itself is used to calculate the main peak height ratio; when the main peak height ratio is calculated using the above-mentioned When calculating the main peak height ratio, it is consistent to calculate the main peak height ratio by dividing the peak height (intensity) of the main peak recorded in the PDF card by the relative intensity when the height (intensity) of the main peak recorded in the PDF card is set to 100. When both methods can be measured, as long as it is consistent with the ratio described in this specification in one situation, it will be deemed to be consistent even if it is not consistent in another situation.

於本發明之燒結體用材料含有REF 3之情形時,就獲得上述含有REF 3之效果之方面而言,REF 3之主峰之高度相對於REaObFc之主峰之高度的高度比較佳為1%以上,更佳為5%以上,進而較佳為10%以上。如上所述,關於本說明書所稱之REF 3與REaObFc之主峰之高度比,於主峰彼此處於較近位置(以2θ計為0.4°以內)之情形時,可分別使用相當於上述特定面之波峰之強度比(I S)除以特定面之相對強度(PDF卡中所記載之強度:I T)而得之數值作為主峰之強度(I M)。 再者,於上述說明中,記載為「強度」係由於在PDF卡中記載為波峰之「強度」,故與本說明書之波峰之「高度」同義。 When the material for sintered bodies of the present invention contains REF 3 , in order to obtain the above-mentioned effect of containing REF 3 , the height ratio of the main peak of REF 3 to the height of the main peak of REaObFc is preferably 1% or more. More preferably, it is 5% or more, and still more preferably, it is 10% or more. As mentioned above, regarding the height ratio of the main peaks of REF 3 and REaObFc, which are referred to in this specification, when the main peaks are close to each other (within 0.4° in 2θ), the peaks corresponding to the above-mentioned specific planes can be used respectively. The intensity ratio ( IS ) divided by the relative intensity of the specific surface (intensity recorded in the PDF card: I T ) is the value obtained as the intensity of the main peak (I M ). Furthermore, in the above description, "strength" is described because the PDF card describes the "strength" of the crest, so it is synonymous with the "height" of the crest in this manual.

燒結體用材料之X射線繞射測定可藉由下述實施例中所記載之方法來測定。並不限定於下述實施例所使用之X射線繞射測定裝置,只要為與其同等以上之精度者就可使用。The X-ray diffraction measurement of the material for sintered body can be measured by the method described in the following Examples. It is not limited to the X-ray diffraction measuring device used in the following Examples, and any device with an accuracy equal to or higher than the X-ray diffraction measuring device can be used.

燒結體用材料較佳為於使用壓汞法所測得之細孔徑分佈中,細孔徑為0.05 μm以上0.5 μm以下之細孔容積為特定值以下。該細孔容積源自本發明之燒結體用材料中之一次粒子間之空隙。若該範圍之細孔徑之細孔容積為0.1 mL/g以上,則構成顆粒之一次粒子較細小,具有一定以上之細孔容積,從而高效率地傳導熱,容易獲得易於熔融且緻密之燒結體。就提高所獲得之燒結體於電漿或藥液中之耐蝕性之觀點而言,細孔徑為0.05 μm以上0.5 μm以下之細孔容積更佳為0.1 mL/g以上,進而較佳為0.13 mL/g以上。就若一次粒子間之空隙過度擴大則顆粒強度下降之方面而言,本發明之粉末之細孔徑為0.05 μm以上0.5 μm以下之細孔容積較佳為0.23 mL/g以下,更佳為0.2 mL/g以下。以下,有時將細孔徑為0.05 μm以上0.5 μm以下之細孔容積記載為「細孔第1容積」。於本說明書中,細孔徑意指細孔直徑。The material for the sintered body preferably has a pore diameter distribution measured using a mercury porosimetry method in which the pore volume of a pore diameter of 0.05 μm or more and 0.5 μm or less is a specific value or less. This pore volume originates from the gaps between primary particles in the material for sintered bodies of the present invention. If the pore volume of the pore diameter in this range is 0.1 mL/g or more, the primary particles constituting the particles are relatively small and have a pore volume of more than a certain level, thereby efficiently conducting heat and easily obtaining a dense sintered body that is easy to melt. . From the viewpoint of improving the corrosion resistance of the obtained sintered body in plasma or chemical solution, the pore diameter is 0.05 μm or more and 0.5 μm or less and the pore volume is more preferably 0.1 mL/g or more, and still more preferably 0.13 mL. /g or above. In view of the fact that if the gaps between the primary particles expand excessively, the particle strength will decrease, the pore diameter of the powder of the present invention is 0.05 μm or more and 0.5 μm or less, and the pore volume is preferably 0.23 mL/g or less, more preferably 0.2 mL. /g or less. Hereinafter, the volume of pores with a pore diameter of 0.05 μm or more and 0.5 μm or less may be described as "pore first volume". In this specification, pore diameter means pore diameter.

於燒結體用材料中,就提昇耐蝕性之方面而言,細孔徑5 μm以上50 μm以下之細孔容積為0.1 mL/g以上亦較佳。細孔徑為5 μm以上50 μm以下之細孔容積源自燒結體用材料中之二次粒子間之空隙之空間。燒結體用材料中之細孔容積更佳為0.1 mL/g以上,特佳為0.2 mL/g以上。就確保充分之流動性之方面而言,燒結體用材料之細孔容積較佳為0.4 mL/g以下,更佳為0.3 mL/g以下。以下,有時將細孔徑為5 μm以上50 μm以下之細孔容積記載為「細孔第2容積」。In materials for sintered bodies, in order to improve corrosion resistance, it is also preferable that the pore diameter is 5 μm or more and 50 μm or less and the pore volume is 0.1 mL/g or more. The pore diameter is 5 μm or more and the pore volume is 50 μm or less. The pore volume is derived from the space between the secondary particles in the material for sintered body. The pore volume in the material for sintered body is more preferably 0.1 mL/g or more, and particularly preferably 0.2 mL/g or more. In order to ensure sufficient fluidity, the pore volume of the material for sintered body is preferably 0.4 mL/g or less, more preferably 0.3 mL/g or less. Hereinafter, the volume of pores with a pore diameter of 5 μm or more and 50 μm or less may be described as "pore second volume".

就進一步提昇所獲得之燒結體之耐蝕性之觀點而言,較佳為於細孔容積相對於使用壓汞法所測得之細孔徑之分佈(橫軸:細孔徑;縱軸:對數微分細孔容積)中,在細孔徑0.05 μm以上0.5 μm以下之範圍內觀察到至少一個波峰。就更有效地提昇耐蝕性之觀點而言,對於細孔徑0.05 μm以上0.5 μm以下之範圍之波峰,更詳細而言,更佳為在細孔徑0.08 μm以上0.35 μm以下之範圍內觀察到至少一個,特佳為在細孔徑0.1 μm以上0.2 μm以下之範圍內觀察到至少一個。以下,有時將細孔容積之分佈中之細孔徑0.05 μm以上0.5 μm以下之範圍之波峰記載為細孔第1波峰。From the viewpoint of further improving the corrosion resistance of the obtained sintered body, the distribution of pore volume relative to the pore diameter measured using the mercury porosimetry method (horizontal axis: pore diameter; vertical axis: logarithmic differential fineness) Pore volume), at least one peak is observed in the range of pore diameter from 0.05 μm to 0.5 μm. From the viewpoint of improving the corrosion resistance more effectively, it is more preferable that at least one wave peak is observed in the range of the pore diameter of 0.05 μm to 0.5 μm, more specifically, the pore diameter is in the range of 0.08 μm to 0.35 μm. , it is particularly preferable to observe at least one in the range of pore diameter from 0.1 μm to 0.2 μm. Hereinafter, the peak in the pore volume distribution in the range of pore diameters from 0.05 μm to 0.5 μm may be described as the first pore peak.

就進一步提昇耐蝕性之觀點而言,本發明之燒結體用材料較佳為於細孔容積相對於使用壓汞法所測得之細孔徑之分佈(橫軸:細孔徑;縱軸:對數微分細孔容積)中,除在細孔徑0.05 μm以上0.5 μm以下之範圍內觀察到至少一個波峰以外,還在細孔徑5 μm以上50 μm以下之範圍內觀察到至少一個波峰。就進一步提昇本發明之燒結體用材料之製造容易性或燒結體之耐蝕性之方面而言,對於細孔徑5 μm以上50 μm以下之範圍之波峰,更詳細而言,更佳為在細孔徑8 μm以上35 μm以下之範圍內觀察到至少一個,特佳為在細孔徑10 μm以上20 μm以下之範圍內觀察到至少一個。以下,有時將細孔容積之分佈中之細孔徑5 μm以上50 μm以下之範圍之波峰記載為細孔第2波峰。From the viewpoint of further improving corrosion resistance, the material for sintered bodies of the present invention preferably has a distribution of pore volume relative to pore diameter measured using the mercury porosimetry method (horizontal axis: pore diameter; vertical axis: logarithmic differential Pore volume), in addition to at least one peak being observed in the range of pore diameters from 0.05 μm to 0.5 μm, at least one peak is also observed in the range of pore diameters from 5 μm to 50 μm. In order to further improve the ease of production of the material for the sintered body of the present invention or the corrosion resistance of the sintered body, the peak in the range of the pore diameter is 5 μm or more and 50 μm or less. More specifically, it is more preferable that the pore diameter is in the range of 5 μm to 50 μm. At least one is observed in the range of 8 μm to 35 μm, and particularly preferably, at least one is observed in the range of 10 μm to 20 μm. Hereinafter, the peak in the pore volume distribution in the range of pore diameters from 5 μm to 50 μm may be described as the second peak of pores.

關於細孔徑分佈具有上述較佳特徵之燒結體用材料,藉由下述較佳之製造方法來製作本發明之燒結體用材料,且調整第4步驟之粉碎條件或噴霧乾燥器之轉速或乾燥條件即可。Regarding the sintered body material having the above-mentioned preferred characteristics in pore size distribution, the sintered body material of the present invention is produced by the following preferred manufacturing method, and the grinding conditions in the fourth step or the rotation speed of the spray dryer or the drying conditions are adjusted. That’s it.

本發明之燒結體用材料於550℃下在大氣氛圍中焙燒2小時後之灼燒減量較佳為10質量%以下。於本發明之燒結體用材料具有該構成之情形時,由於未因燒結而揮發之成分之比率較高,因此容易獲得緻密且硬度較高之燒結體。就該觀點而言,燒結體用材料之上述灼燒減量更佳為7質量%以下,特佳為5質量%以下。灼燒減量可藉由下述實施例中所記載之方法來測定。 灼燒減量為上述上限以下之燒結體用材料可藉由於下述較佳之製造方法中調整有機物黏合劑之量等或抑制包含羥基或水分而獲得。 The ignition loss of the material for sintered bodies of the present invention after baking in the air at 550° C. for 2 hours is preferably 10 mass% or less. When the material for sintered bodies of the present invention has this structure, since the ratio of components that are not volatilized by sintering is high, it is easy to obtain a dense and high-hardness sintered body. From this point of view, the ignition loss of the material for sintered body is more preferably 7 mass % or less, and particularly preferably 5 mass % or less. The loss on ignition can be measured by the method described in the following examples. A material for a sintered body whose loss on ignition is less than or equal to the above-mentioned upper limit can be obtained by adjusting the amount of the organic binder or suppressing the inclusion of hydroxyl groups or moisture in the preferable manufacturing method described below.

本發明之燒結體用材料之BET比表面積較佳為2 m 2/g以上10 m 2/g以下。就易燒結性之方面而言,BET比表面積較佳為2 m 2/g以上。就容易提高顆粒狀態下之流動性之方面、或提高成形體密度,燒結時之收縮率變佳,容易獲得目標燒結體尺寸之方面而言,BET比表面積較佳為10 m 2/g以下。就該等方面而言,燒結體用材料之BET比表面積更佳為3 m 2/g以上7 m 2/g以下。 關於BET比表面積處於上述範圍內之燒結體用材料,藉由下述較佳之製造方法來製造本發明之燒結體用材料,且調整第4步驟之粉碎步驟中之粉碎條件或噴霧乾燥器之乾燥條件即可。 The BET specific surface area of the material for sintered bodies of the present invention is preferably 2 m 2 /g or more and 10 m 2 /g or less. In terms of easy sintering, the BET specific surface area is preferably 2 m 2 /g or more. The BET specific surface area is preferably 10 m 2 /g or less in order to easily improve the fluidity in the granular state, increase the density of the compact, improve the shrinkage during sintering, and easily obtain the target sintered compact size. From these points of view, the BET specific surface area of the material for sintered body is more preferably 3 m 2 /g or more and 7 m 2 /g or less. Regarding the material for sintered body whose BET specific surface area is within the above range, the material for sintered body of the present invention is produced by the following preferred manufacturing method, and the grinding conditions in the grinding step of the fourth step or the drying of the spray dryer are adjusted. Conditions are enough.

本發明之燒結體用材料之振實密度與鬆密度之比(振實密度/鬆密度)即豪斯納比較佳為1.0以上1.3以下。就流動性變佳,容易製作均勻之成形體之方面而言,燒結體用材料之豪斯納比較佳為1.3以下。就該觀點而言,燒結體用材料之豪斯納比更佳為1.0以上1.2以下。The ratio of tap density to bulk density (tap density/bulk density) of the material for sintered bodies of the present invention, that is, the Hausner ratio, is preferably 1.0 or more and 1.3 or less. In order to improve fluidity and make it easier to produce a uniform molded body, the Hausner ratio of the material for the sintered body is preferably 1.3 or less. From this point of view, the Hausner ratio of the material for sintered body is more preferably 1.0 or more and 1.2 or less.

就進一步提昇由豪斯納比為1.0以上1.3以下所帶來之效果之方面而言,燒結體用材料之振實密度(亦稱為振實法視密度。簡稱:TD)較佳為1.4 g/cm 3以上2.8 g/cm 3以下,進而較佳為1.6 g/cm 3以上2.6 g/cm 3以下。 In order to further enhance the effect of having a Hausner ratio of 1.0 to 1.3, the tap density of the sintered body material (also called tap apparent density, abbreviated as TD) is preferably 1.4 g. /cm 3 or more and 2.8 g/cm 3 or less, and more preferably 1.6 g/cm 3 or more and 2.6 g/cm 3 or less.

就進一步提昇由豪斯納比為1.0以上1.3以下所帶來之效果之方面而言,燒結體用材料之鬆密度(亦稱為靜置法視密度。簡稱:AD)較佳為1.1 g/cm 3以上2.4 g/cm 3以下,進而較佳為1.3 g/cm 3以上2.2 g/cm 3以下。 In order to further enhance the effect of having a Hausner ratio of 1.0 to 1.3, the bulk density of the material for the sintered body (also called the standing apparent density. Abbreviation: AD) is preferably 1.1 g/ cm 3 or more and 2.4 g/cm 3 or less, and more preferably 1.3 g/cm 3 or more and 2.2 g/cm 3 or less.

關於豪斯納比或鬆密度、振實密度處於上述範圍內之燒結體用材料,藉由下述較佳之製造方法來製造本發明之燒結體用材料,且調整粉碎條件或噴霧乾燥器噴霧時之漿料濃度即可。Regarding the material for sintered body whose Hausner ratio, bulk density, and tap density are within the above range, the material for sintered body of the present invention is produced by the following preferred manufacturing method, and the grinding conditions or spray dryer spraying are adjusted. The slurry concentration is sufficient.

於本發明之燒結體用材料中,平均粒徑較佳為10 μm以上100 μm以下。藉由使燒結體用材料之平均粒徑為10 μm以上,流動性變佳,容易製作均勻之成形體(成型體)。又,若上述燒結體用材料之平均粒徑為100 μm以下,則材料之處理性較佳。就該等觀點而言,燒結體用材料之平均粒徑較佳為20 μm以上80 μm以下,進而較佳為30 μm以上60 μm以下。此處所謂之平均粒徑係在燒結體用材料之超音波分散處理前所測得之平均粒徑。平均粒徑藉由利用雷射繞射散射式粒度分佈測定法所得之累積體積50容量%下之體積累積粒徑D 50來確定。 In the material for sintered bodies of the present invention, the average particle diameter is preferably 10 μm or more and 100 μm or less. By setting the average particle diameter of the material for sintered body to 10 μm or more, the fluidity becomes better and it becomes easier to produce a uniform shaped body (molded body). In addition, if the average particle diameter of the material for sintered body is 100 μm or less, the material processing properties will be better. From these viewpoints, the average particle size of the material for sintered bodies is preferably from 20 μm to 80 μm, and more preferably from 30 μm to 60 μm. The average particle diameter here refers to the average particle diameter measured before the ultrasonic dispersion treatment of the material for sintered body. The average particle size is determined by the cumulative volume particle size D 50 at 50% volume of the cumulative volume obtained by laser diffraction scattering particle size distribution measurement.

<燒結體用材料之製造方法> 其次,對本發明之燒結體用材料之較佳之製造方法進行說明。本製造方法較佳為具有以下之第1步驟~第5步驟。以下,對各步驟進行詳述。 ・第1步驟:使稀土類化合物之水溶液(以下,亦稱為「稀土類水溶液」)與含氟溶液進行反應,獲得稀土類元素之氟化物之前驅物(以下,亦稱為「稀土類氟化物前驅物」)之沈澱物。 ・第2步驟:混入材料中之Al在50質量ppm以下(特佳為1~50質量ppm)之環境下以300℃~850℃對稀土類氟化物前驅物進行焙燒,獲得稀土類氟化物。 ・第3步驟:將稀土類氟化物與稀土類元素之氧化物及/或在大氣中焙燒後會成為氧化物之稀土類元素之化合物加以混合後,於混入材料中之Al在50質量ppm以下(特佳為1~50質量ppm)之環境下以500℃~900℃對其進行焙燒,獲得REaObFc所表示之稀土類氟氧化物或該稀土類氟氧化物與稀土類氟化物之混合物。 ・第4步驟:將REaObFc所表示之稀土類氟氧化物或該稀土類氟氧化物與稀土類氟化物之混合物粉碎,獲得REaObFc所表示之稀土類氟氧化物或該稀土類氟氧化物與稀土類氟化物之混合物之漿料。 ・第5步驟:利用噴霧乾燥器對REaObFc所表示之稀土類氟氧化物或該稀土類氟氧化物與稀土類氟化物之混合物之漿料進行乾燥,獲得稀土類氟氧化物或稀土類氟氧化物與稀土類氟化物之混合物之顆粒。 關於混入材料中之Al在50質量ppm以下(特佳為1~50質量ppm)之環境下,特佳亦為混入材料中之Al在500質量ppm以下(特佳為1~500質量ppm)之環境下。 <Manufacturing method of materials for sintered bodies> Next, a preferred method for producing the material for sintered bodies of the present invention will be described. This manufacturing method preferably has the following 1st step - 5th step. Each step is described in detail below. ・Step 1: React an aqueous solution of a rare earth compound (hereinafter, also referred to as "rare earth aqueous solution") with a fluorine-containing solution to obtain a fluoride precursor of a rare earth element (hereinafter, also referred to as "rare earth fluorine") Precipitate of "chemical precursor"). ・Step 2: Calculate the rare earth fluoride precursor at 300°C to 850°C in an environment where the Al mixed into the material is 50 ppm by mass or less (preferably 1 to 50 ppm by mass) to obtain the rare earth fluoride. ・Step 3: After mixing rare earth fluorides with oxides of rare earth elements and/or compounds of rare earth elements that become oxides after being baked in the atmosphere, the Al mixed into the material must be less than 50 ppm by mass. It is calcined at 500°C to 900°C in an environment (especially preferably 1 to 50 ppm by mass) to obtain a rare earth oxyfluoride represented by REaObFc or a mixture of the rare earth oxyfluoride and a rare earth fluoride. ・Step 4: Crush the rare earth oxyfluoride represented by REaObFc or the mixture of the rare earth oxyfluoride and the rare earth fluoride to obtain the rare earth oxyfluoride represented by REaObFc or the rare earth oxyfluoride and the rare earth Slurry of fluoride-like mixture. ・Step 5: Use a spray dryer to dry the slurry of the rare earth oxyfluoride represented by REaObFc or the mixture of the rare earth oxyfluoride and the rare earth fluoride to obtain the rare earth oxyfluoride or the rare earth oxyfluoride Particles of mixtures of substances and rare earth fluorides. Regarding the environment where the Al mixed in the material is 50 ppm by mass or less (preferably, 1 to 50 ppm by mass), the best is also an environment where the Al mixed in the material is 500 ppm by mass or less (preferably, 1 to 500 ppm by mass). environment.

[第1步驟] 於本步驟中,獲得稀土類氟化物前驅物。向稀土類水溶液中滴加含氟溶液而製作沈澱物。就製造成本之方面而言,作為稀土類水溶液,較佳為使用選自稀土類元素之氯化物之水溶液、稀土類元素之硝酸鹽之水溶液或稀土類元素之乙酸鹽之水溶液等中之一種或兩種以上,就稀土類氟化物前驅物之產率之方面而言,特佳為稀土類元素之氯化物之水溶液或硝酸鹽之水溶液。就製造成本之方面而言,作為含氟溶液,較佳為使用選自氫氟酸水溶液(氫氟酸)、氟化氫銨水溶液或氟化銨水溶液等中之一種或兩種以上,就稀土類氟化物前驅物之產率之方面而言,特佳為使用氫氟酸水溶液(氫氟酸)。又,只要不成為Al及Si混入源,就可根據目的而添加pH值調整劑、絮凝劑或分散劑等各種添加物。 對所獲得之沈澱物進行洗淨及過濾,獲得稀土類氟化物前驅物。此時,沈澱物之洗淨、過濾可組合一種或兩種以上之減壓過濾、離心分離機、離心脫水機或壓濾機等各種洗淨、過濾裝置使用。 [Step 1] In this step, a rare earth fluoride precursor is obtained. A fluorine-containing solution is added dropwise to the rare earth aqueous solution to form a precipitate. In terms of manufacturing cost, it is preferable to use one selected from the group consisting of an aqueous solution of a chloride of a rare earth element, an aqueous solution of a nitrate of a rare earth element, an aqueous solution of an acetate of a rare earth element, etc. as the rare earth aqueous solution. There are two or more types. In terms of the yield of the rare earth fluoride precursor, an aqueous solution of a chloride of a rare earth element or an aqueous solution of a nitrate is particularly preferred. In terms of manufacturing cost, as the fluorine-containing solution, it is preferable to use one or two or more selected from the group consisting of hydrofluoric acid aqueous solution (hydrofluoric acid), ammonium bifluoride aqueous solution, ammonium fluoride aqueous solution, etc., in the case of rare earth fluorine In terms of the yield of the compound precursor, it is particularly preferable to use an aqueous hydrofluoric acid solution (hydrofluoric acid). In addition, various additives such as a pH adjuster, a flocculant, or a dispersant can be added according to the purpose as long as they do not become a source of mixing of Al and Si. The obtained precipitate is washed and filtered to obtain a rare earth fluoride precursor. At this time, the washing and filtration of the sediment can be combined with one or more various washing and filtration devices such as vacuum filtration, centrifugal separator, centrifugal dewatering machine or filter press.

[第2步驟] 於本步驟中,藉由對第1步驟中所獲得之稀土類氟化物前驅物進行焙燒而獲得稀土類氟化物之粉末。在焙燒之前可視需要進行乾燥等。作為於材料中Al、Si之混入為上述特定值以下之環境,可例舉:為了避免在稀土類氟化物前驅物焙燒時Al或Si混入,與前驅物直接接觸之爐材或匣缽或者皿係使用氧化釔(Y 2O 3)、氧化鋯(ZrO 2)或鉑(Pt)等儘量不含Al、Si成分之材質。又,關於焙燒時之溫度,亦為了儘量減少由前驅物所產生之氟氣,較佳為於300℃~850℃之溫度下進行焙燒。更佳為於350℃~800℃下進行焙燒,進而較佳為於400℃~750℃下進行焙燒。其原因在於:若成為低溫,則水合物殘留而不易管理下一步驟中之添加量,若成為高溫,則氟氣顯著揮發而容易與爐材或匣缽等之Al或Si成分發生反應。又,若為低溫焙燒,則焙燒物不凝聚,即便不粉碎亦可獲得粉末,若於超過800℃之溫度下進行焙燒,則焙燒物容易凝固,有時需要進行粉碎。關於焙燒,較佳為使用電爐、輥道窯或旋轉窯等中之一種進行焙燒。焙燒可使用大氣氛圍等活性氛圍及氬氣等惰性氛圍之任一者,但就獲得所需之材料組成之方面或製造成本之方面而言,較佳為大氣氛圍。就獲得所需之材料組成之方面及抑制Al或Al及Si之混入之方面而言,焙燒時間例如較佳為設為3~48小時,特佳為設為5~24小時。 [Second step] In this step, the rare earth fluoride precursor obtained in the first step is fired to obtain rare earth fluoride powder. Drying, etc. may be carried out if necessary before roasting. An example of an environment where the mixing of Al and Si in the material is below the above-mentioned specific value is: in order to avoid the mixing of Al or Si during the baking of the rare earth fluoride precursor, a furnace material, a sagger or a dish that is in direct contact with the precursor Materials such as yttrium oxide (Y 2 O 3 ), zirconium oxide (ZrO 2 ), or platinum (Pt) are used that contain as little Al or Si components as possible. In addition, regarding the temperature during baking, in order to minimize the fluorine gas generated from the precursor, it is preferable to bake at a temperature of 300°C to 850°C. It is more preferable to bake at 350°C to 800°C, and even more preferably to bake at 400°C to 750°C. The reason for this is that if the temperature becomes low, hydrates remain and it is difficult to control the amount added in the next step. If the temperature reaches high temperature, fluorine gas significantly volatilizes and easily reacts with Al or Si components of furnace materials, saggers, etc. In addition, if the roasting is performed at a low temperature, the roasted product will not agglomerate, and powder can be obtained without pulverizing. However, if the roasted product is roasted at a temperature exceeding 800°C, the roasted product will easily solidify, and pulverization may be necessary. Regarding roasting, it is preferable to use one of an electric furnace, a roller kiln, a rotary kiln, or the like. For the baking, either an active atmosphere such as an atmospheric atmosphere or an inert atmosphere such as argon gas may be used. However, in terms of obtaining a desired material composition or manufacturing cost, an atmospheric atmosphere is preferred. From the viewpoint of obtaining a desired material composition and suppressing the mixing of Al or Al and Si, the baking time is preferably, for example, 3 to 48 hours, and particularly preferably 5 to 24 hours.

[第3步驟] 於本步驟中,將第2步驟中所獲得之稀土類氟化物與稀土類元素之氧化物及/或在大氣中焙燒後會成為氧化物之稀土類元素之化合物加以混合後進行焙燒,獲得REaObFc所表示之稀土類氟氧化物或該稀土類氟氧化物與稀土類氟化物之混合物。作為在大氣中焙燒後會成為氧化物之稀土類元素之化合物,可使用稀土類元素之氫氧化物、稀土類元素之碳酸鹽、稀土類元素溫乙酸鹽、稀土類元素之草酸鹽或各種稀土類錯合物等。作為本步驟中與稀土類氟化物混合之稀土類元素之化合物,稀土類元素之氧化物等不易產生氣體成分者由於對爐材造成之損害較少,可減少Al或Si或其他雜質,故而較佳。 [Step 3] In this step, the rare earth fluoride obtained in the second step is mixed with oxides of rare earth elements and/or compounds of rare earth elements that will become oxides after being roasted in the atmosphere, and then roasted to obtain REaObFc The rare earth oxyfluoride or the mixture of the rare earth oxyfluoride and the rare earth fluoride. As compounds of rare earth elements that become oxides after being baked in the atmosphere, hydroxides of rare earth elements, carbonates of rare earth elements, warm acetates of rare earth elements, oxalates of rare earth elements, or various other compounds can be used. Rare earth complexes, etc. As compounds of rare earth elements mixed with rare earth fluoride in this step, oxides of rare earth elements that are less likely to generate gas components cause less damage to the furnace material and can reduce Al or Si or other impurities, so they are more reliable. good.

再者,稀土類氟氧化物與稀土類氟化物之混合物由於在粉末X射線繞射中觀察到稀土類氟氧化物之波峰及稀土類氟化物之波峰這兩者,故而稱為混合物。Furthermore, a mixture of a rare earth oxyfluoride and a rare earth fluoride is called a mixture because both the peaks of the rare earth oxyfluoride and the peaks of the rare earth fluoride are observed in powder X-ray diffraction.

在混合前亦可視需要將稀土類氟化物或稀土類元素之化合物粉碎等為容易處理之粒徑。混合可使用各種乾式粉碎機、濕式粉碎機、混合機或混合方法來進行。Before mixing, the rare earth fluoride or rare earth element compound may also be pulverized to a particle size that is easy to handle if necessary. Mixing can be performed using various dry grinders, wet grinders, mixers or mixing methods.

稀土類氟化物與稀土類氧化物及/或在大氣中焙燒後會成為氧化物之化合物之混合比率較佳為與目標燒結體用材料之F/RE莫耳比(以下,亦稱為「莫耳比1」)相同程度,或者考慮到F會因焙燒而稍微揮發,而稍微大於目標燒結體用材料之F/RE莫耳比。例如,就獲得所需組成之方面或防止Al、Si之混入之方面而言,稀土類氟化物與稀土類氧化物及/或在大氣中焙燒後會成為氧化物之化合物之混合比率之F/RE莫耳比(以下,亦稱為「莫耳比2」)較佳為莫耳比2/莫耳比1為0.95~1.10,特佳為1.00~1.05。The mixing ratio of rare earth fluorides and rare earth oxides and/or compounds that become oxides after being baked in the atmosphere is preferably the F/RE molar ratio (hereinafter, also referred to as "Molecular Ratio") to the target material for sintered bodies. molar ratio 1"), or slightly larger than the F/RE molar ratio of the target sintered body material, taking into account that F is slightly volatilized due to baking. For example, in order to obtain a desired composition or to prevent the mixing of Al and Si, the mixing ratio of rare earth fluorides and rare earth oxides and/or compounds that become oxides after being baked in the atmosphere is F/ The RE molar ratio (hereinafter, also referred to as "molar ratio 2") is preferably molar ratio 2/molar ratio 1 of 0.95 to 1.10, particularly preferably 1.00 to 1.05.

於混合後之焙燒中,作為混入材料中之Al在上述特定值以下之環境,可例舉:與第2步驟同樣地,作為與上述混合物直接接觸之爐材或匣缽或者皿,而使用氧化釔(Y 2O 3)、氧化鋯(ZrO 2)或鉑(Pt)等儘量不含Al、Si成分之材質。關於焙燒溫度,較佳為於500℃~900℃之溫度下進行焙燒,更佳為於550℃~850℃下進行焙燒,進而較佳為於600℃~800℃下進行焙燒。其原因在於若成為低溫,則稀土類氟氧化物之生成不充分,若成為高溫,則氟化氫氣體顯著揮發。焙燒可使用大氣氛圍等活性氛圍及氬氣等惰性氛圍之任一者,但就獲得所需組成之方面及製造成本之方面而言,較佳為大氣氛圍。就獲得所需之材料組成之方面及抑制Al或Al及Si之混入之方面而言,焙燒時間例如較佳為設為3~24小時,特佳為設為5~12小時。 In the baking after mixing, an example of an environment in which the Al mixed in the material is below the above-mentioned specific value is to use an oxidizer as a furnace material, a sagger, or a dish that is in direct contact with the mixture in the same manner as in the second step. Materials such as yttrium (Y 2 O 3 ), zirconium oxide (ZrO 2 ) or platinum (Pt) that do not contain Al or Si components as much as possible. Regarding the calcination temperature, it is preferably 500°C to 900°C, more preferably 550°C to 850°C, and even more preferably 600°C to 800°C. The reason for this is that when the temperature is low, the rare earth oxyfluoride is insufficiently produced, and when the temperature is high, the hydrogen fluoride gas significantly volatilizes. For roasting, either an active atmosphere such as an atmospheric atmosphere or an inert atmosphere such as argon gas can be used. However, in terms of obtaining a desired composition and manufacturing cost, an atmospheric atmosphere is preferred. From the viewpoint of obtaining a desired material composition and suppressing the mixing of Al or Al and Si, the baking time is preferably, for example, 3 to 24 hours, and particularly preferably 5 to 12 hours.

再者,於本方法之情形時,Al、Si之量通常為上述下限值以上。認為其原因在於原材料中原本包含之Al、Si或於製造裝置之原材料中含有一部分之Al或Si。In addition, in the case of this method, the amounts of Al and Si are usually not less than the above-mentioned lower limits. The reason is considered to be that Al or Si originally contained in the raw materials or a part of Al or Si contained in the raw materials of the manufacturing equipment.

[第4步驟] 於本步驟中,將REaObFc所表示之稀土類氟氧化物或該稀土類氟氧化物與稀土類氟化物之混合物壓碎,獲得REaObFc所表示之稀土類氟氧化物或該稀土類氟氧化物與稀土類氟化物之混合物之漿料。粉碎可使用乾式粉碎及濕式粉碎之任一者。粉碎可以1個階段實施,或者亦可以2個階段以上實施。就成本及工夫之方面而言,較佳為以1個階段進行粉碎。較佳為在粉碎後添加水等液媒而進行漿料化。於進行乾式粉碎之情形時,例如可使用磨碎機、噴射磨機、球磨機、錘磨機及針磨機等各種乾式粉碎機。另一方面,於進行濕式粉碎之情形時,例如可使用球磨機或珠磨機等各種濕式粉碎機。粉碎機中與被粉碎物接觸之部分(例如粉碎介質、裝置內表面)宜使用儘量不含Al、尤其是Al及Si者。例如,裝置內表面可使用不鏽鋼(但是,於以下僅稱為「不鏽鋼」之情形時,例如,如SUS405、SUS631般添加有Al者除外)、氧化鋯、氧化釔穩定氧化鋯(YSZ)(再者,氧化釔穩定氧化鋯(YSZ)以亦包含氧化釔部分穩定氧化鋯之意義使用)、或通用塑膠等。又,作為粉碎介質,可使用不鏽鋼、氧化鋯、YSZ或樹脂被覆珠粒等。 本步驟中之稀土類氟氧化物或稀土類氟氧化物與稀土類氟化物之混合物之粉碎程度較佳為使經粉碎之漿料乾燥後使用BET單點法所測得之BET比表面積(BET)成為2 m 2/g~10 m 2/g之程度。藉由進行該程度之粉碎,容易獲得於較佳之細孔範圍內具有細孔波峰及較佳之細孔容積,且BET比表面積處於較佳範圍內之顆粒。就該等觀點而言,BET比表面積(BET)進而較佳為3 m 2/g~8m 2/g。 [Step 4] In this step, the rare earth oxyfluoride represented by REaObFc or the mixture of the rare earth oxyfluoride and the rare earth fluoride is crushed to obtain the rare earth oxyfluoride represented by REaObFc or the rare earth oxyfluoride. A slurry of a mixture of oxyfluorides and rare earth fluorides. For grinding, either dry grinding or wet grinding can be used. The crushing may be carried out in one stage, or may be carried out in two or more stages. In terms of cost and labor, it is better to crush in one stage. It is preferable to add a liquid medium such as water after grinding to form a slurry. In the case of dry grinding, various dry grinders such as attritors, jet mills, ball mills, hammer mills, and pin mills can be used. On the other hand, when performing wet grinding, various wet grinders such as a ball mill and a bead mill can be used. The parts of the pulverizer that are in contact with the object to be pulverized (such as the pulverizing medium and the inner surface of the device) should be made as free of Al as possible, especially Al and Si. For example, stainless steel can be used for the inner surface of the device (however, when it is only referred to as "stainless steel" below, except for those with Al added such as SUS405 and SUS631), zirconium oxide, yttria-stabilized zirconia (YSZ) (and further Or, yttria-stabilized zirconia (YSZ) is used in the sense that it also includes yttria-stabilized zirconia), or general-purpose plastics, etc. In addition, as the grinding medium, stainless steel, zirconia, YSZ, resin-coated beads, etc. can be used. The grinding degree of the rare earth oxyfluoride or the mixture of rare earth oxyfluoride and rare earth fluoride in this step is preferably the BET specific surface area (BET) measured using the BET single-point method after drying the pulverized slurry. ) becomes about 2 m 2 /g~10 m 2 /g. By carrying out this level of grinding, it is easy to obtain particles that have pore peaks and a preferable pore volume within a preferable pore range, and have a BET specific surface area within a preferable range. From these viewpoints, the BET specific surface area (BET) is further preferably 3 m 2 /g to 8 m 2 /g.

較佳為將本步驟中之稀土類氟氧化物或稀土類氟氧化物與稀土類氟化物之混合物之化合物濃度設為100 g/L~1500 g/L,特佳為設為300 g/L~1000 g/L。藉由將漿料濃度設定為該範圍內,可抑制能量過度消耗,又,可使漿料黏度變得適當而使噴霧穩定。 於調整漿料濃度之步驟中視需要可添加各種黏合劑、塑化劑或分散劑等添加劑。於在此時添加添加劑之情形時,就在下一步驟之成形體焙燒時容易去除有機物之觀點而言,較佳為將有機物之總量設為10質量%以下。關於作為黏合劑之有機物,可使用聚乙烯醇、聚乙烯醇縮丁醛、甲基纖維素、羧甲基纖維素、分子中包含羧基或其衍生物之丙烯酸系黏合劑、聚乙二醇、聚乙烯吡咯啶酮等有機高分子黏合劑。 Preferably, the compound concentration of the rare earth oxyfluoride or the mixture of the rare earth oxyfluoride and the rare earth fluoride in this step is set to 100 g/L to 1500 g/L, particularly preferably 300 g/L. ~1000 g/L. By setting the slurry concentration within this range, excessive energy consumption can be suppressed, and the slurry viscosity can be made appropriate to stabilize the spray. In the step of adjusting the slurry concentration, various additives such as binders, plasticizers or dispersants can be added as needed. When adding additives at this time, from the viewpoint of easy removal of organic matter when the molded body is baked in the next step, it is preferable to set the total amount of organic matter to 10 mass % or less. As for the organic substance used as the binder, polyvinyl alcohol, polyvinyl butyral, methyl cellulose, carboxymethyl cellulose, acrylic binders containing carboxyl groups or their derivatives in the molecule, polyethylene glycol, Polyvinylpyrrolidone and other organic polymer adhesives.

[第5步驟] 於本步驟中,利用噴霧乾燥器對第4步驟中所獲得之漿料進行造粒,獲得REaObFc所表示之稀土類氟氧化物或該稀土類氟氧化物與稀土類氟化物之混合物之造粒物。噴霧乾燥器運轉時霧化器之轉速較佳為設為5000 min -1~25000 min -1。藉由將轉速設為5000 min -1以上,可獲得均勻之造粒物。另一方面,藉由將轉速設為25000 min -1以下,容易獲得所需之顆粒徑或流動性較佳之顆粒。就該等觀點而言,霧化器之轉速進而較佳為設為6000 min -1~20000 min -1。 噴霧乾燥器運轉時入口溫度較佳為設為150℃~300℃。藉由將入口溫度設為150℃以上,可充分進行固形物成分之乾燥,容易獲得殘存水分較少之顆粒。另一方面,藉由將入口溫度設為300℃以下,可抑制能量空耗。噴霧乾燥器中與漿料接觸之部分較佳為使用儘量不具有Al、尤其是Al及Si之構件。作為此種構件,可例舉不鏽鋼或鐵氟龍(註冊商標)。 [Step 5] In this step, the slurry obtained in step 4 is granulated using a spray dryer to obtain the rare earth oxyfluoride represented by REaObFc or the rare earth oxyfluoride and the rare earth fluoride. The mixture is granulated. When the spray dryer is running, the rotation speed of the atomizer is preferably set to 5000 min -1 ~ 25000 min -1 . By setting the rotation speed to 5000 min -1 or more, uniform granules can be obtained. On the other hand, by setting the rotation speed to 25000 min -1 or less, it is easy to obtain particles with a desired particle size or better fluidity. From these viewpoints, the rotation speed of the atomizer is preferably set to 6000 min -1 to 20000 min -1 . When the spray dryer is operating, the inlet temperature is preferably set to 150°C to 300°C. By setting the inlet temperature to 150°C or higher, the solid content can be sufficiently dried and particles with less residual moisture can be easily obtained. On the other hand, by setting the inlet temperature to 300°C or less, energy wasted can be suppressed. The parts of the spray dryer that are in contact with the slurry are preferably made of components containing as little Al as possible, especially Al and Si. Examples of such a member include stainless steel and Teflon (registered trademark).

藉由上述步驟,獲得燒結體用材料。Through the above steps, a material for sintered bodies is obtained.

其次,對本發明之燒結體進行說明。 本發明之燒結體含有REaObFc, 燒結體整體中之氟元素(F)之莫耳數相對於稀土類元素(RE)之莫耳數之比(F/RE莫耳比)為1.3以上2.8以下,且 鋁(Al)之含量為50質量ppm以下。 本發明之燒結體藉由上述構成而對電漿或藥液顯示出優異之耐蝕性。 Next, the sintered body of the present invention will be described. The sintered body of the present invention contains REaObFc, The ratio of the molar number of fluorine element (F) to the molar number of rare earth elements (RE) (F/RE molar ratio) in the entire sintered body is 1.3 or more and 2.8 or less, and The content of aluminum (Al) is 50 ppm by mass or less. The sintered body of the present invention exhibits excellent corrosion resistance against plasma or chemical liquid due to the above-mentioned constitution.

作為構成燒結體之REaObFc之較佳者,可適用關於上述燒結體用材料之REaObFc之較佳構成之記載。As the preferred REaObFc constituting the sintered body, the description regarding the preferred configuration of REaObFc as the material for the sintered body described above can be applied.

就進一步提高上述燒結體於電漿及藥液中之優異之耐蝕性之效果之方面而言,燒結體之F/RE莫耳比較佳為1.3以上2.8以下,更佳為1.4以上2.6以下,特佳為1.5以上2.4以下。燒結體之F/RE莫耳比可藉由下述實施例中所記載之方法來測定。In order to further improve the excellent corrosion resistance of the sintered body in plasma and chemical liquids, the F/RE molar ratio of the sintered body is preferably 1.3 or more and 2.8 or less, more preferably 1.4 or more and 2.6 or less, especially The best value is above 1.5 and below 2.4. The F/RE molar ratio of the sintered body can be measured by the method described in the following examples.

藉由使燒結體中之Al含量為50質量ppm以下,可抑制由Al所導致之異相或較大之雜質粒界,故而對電漿或藥液處理之耐蝕性優異。又,藉由使燒結體中之Al含量為1質量ppm以上,除容易製造以外,還具有機械強度提昇之優點。就該方面而言,燒結體用材料中之Al含量更佳為1質量ppm以上35質量ppm以下,特佳為1質量ppm以上25質量ppm以下。燒結體之Al含量可藉由下述實施例中所記載之方法來測定。By setting the Al content in the sintered body to 50 ppm by mass or less, heterogeneous phases or large impurity grain boundaries caused by Al can be suppressed, resulting in excellent corrosion resistance against plasma or chemical liquid treatment. In addition, by setting the Al content in the sintered body to 1 mass ppm or more, it not only facilitates production, but also has the advantage of improving mechanical strength. In this regard, the Al content in the material for sintered bodies is more preferably from 1 mass ppm to 35 mass ppm, and particularly preferably from 1 mass ppm to 25 mass ppm. The Al content of the sintered body can be measured by the method described in the following examples.

進而,藉由使燒結體中之Si含量為500質量ppm以下,可抑制由Al所導致之異相或較大之雜質粒界,故而對電漿或藥液處理之耐蝕性優異。又,藉由使燒結體中之Si含量為1質量ppm以上,除容易製造以外,還具有機械強度提昇之優點。就該方面而言,燒結體用材料中之Si含量更佳為1質量ppm以上350質量ppm以下,特佳為1質量ppm以上200質量ppm以下。燒結體之Si含量可藉由下述實施例中所記載之方法來測定。Furthermore, by setting the Si content in the sintered body to 500 ppm by mass or less, heterogeneous phases or large impurity grain boundaries caused by Al can be suppressed, so the corrosion resistance against plasma or chemical liquid treatment is excellent. In addition, by setting the Si content in the sintered body to 1 mass ppm or more, it is easy to manufacture and has the advantage of improving the mechanical strength. In this regard, the Si content in the material for sintered bodies is more preferably 1 mass ppm or more and 350 mass ppm or less, and particularly preferably 1 mass ppm or more and 200 mass ppm or less. The Si content of the sintered body can be measured by the method described in the following examples.

本發明之燒結體較佳為於XRD分析中,除稀土類元素之氟氧化物以外所包含之結晶相實質上僅由REF 3所表示之稀土類元素之氟化物構成。實質上僅由REF 3所表示之稀土類元素之氟化物構成較佳為意指於使用CuKα線並以2θ=20~60°作為掃描範圍之XRD分析中,源自除稀土類元素之氟氧化物及REF 3所表示之稀土類元素之氟化物以外之化合物的結晶相之最大高度之波峰(主峰)之高度相對於源自REaObFc之結晶相之最大高度之波峰(主峰)之峰高為10%以下,更佳為5%以下,進而較佳為3%以下,最佳為1%以下。 The sintered body of the present invention is preferably one in which the crystalline phase other than the oxyfluoride of the rare earth element is substantially composed only of the fluoride of the rare earth element represented by REF 3 in the XRD analysis. Preferably, it is substantially composed of only fluorides of rare earth elements represented by REF 3 , which means that in XRD analysis using CuKα line and 2θ = 20 to 60° as the scanning range, it originates from fluorine oxidation of rare earth elements. The height of the maximum height peak (main peak) of the crystalline phase of the compound other than the fluoride of the rare earth element represented by REF 3 is 10 relative to the peak height of the maximum height peak (main peak) of the crystalline phase derived from REaObFc % or less, more preferably 5% or less, still more preferably 3% or less, most preferably 1% or less.

進而,在本發明之燒結體於XRD分析(具體而言,為使用CuKα線並以2θ=20~60°作為掃描範圍之XRD分析)中,觀察到源自除REaObFc以外之稀土類元素之氟氧化物之波峰之情形時,該波峰之峰高較佳為相對於源自REaObFc之結晶相之最大高度之波峰(主峰)之峰高為10%以下,更佳為5%以下。Furthermore, in XRD analysis of the sintered body of the present invention (specifically, XRD analysis using CuKα line and 2θ=20 to 60° as the scanning range), fluorine derived from rare earth elements other than REaObFc was observed. In the case of an oxide peak, the peak height of the peak is preferably 10% or less, more preferably 5% or less relative to the peak height (main peak) of the maximum height of the crystal phase derived from REaObFc.

本發明之燒結體較佳為以REaObFc作為主相。此處,以REaObFc作為主相意指於使用CuKα線並以2θ=20~60°作為掃描範圍之XRD分析中,源自REaObFc之波峰為最大高度之波峰。The sintered body of the present invention preferably uses REaObFc as the main phase. Here, using REaObFc as the main phase means that in XRD analysis using CuKα line and 2θ=20 to 60° as the scanning range, the peak originating from REaObFc is the peak with the maximum height.

又,即便於本發明之燒結體不以REaObFc作為主相之情形時,REaObFc之主峰之峰高相對於REF 3所表示之稀土類元素之氟化物REF 3之結晶相之特定面之波峰之峰高的比率亦較佳為50%以上,更佳為80%以上。該特定面之波峰與上述燒結體用材料中之REF 3之結晶相之特定面之波峰相同。 Furthermore, even when the sintered body of the present invention does not have REaObFc as the main phase, the peak height of the main peak of REaObFc is relative to the peak height of the specific plane of the crystalline phase of the rare earth element fluoride REF 3 represented by REF 3 . The high ratio is preferably 50% or more, more preferably 80% or more. The peak of this specific surface is the same as the peak of the specific surface of the crystal phase of REF 3 in the above-mentioned material for sintered body.

於本發明之燒結體含有REF 3之情形時,就獲得上述含有REF 3之效果之方面而言,REF 3之主峰之高度相對於REaObFc之主峰之高度的高度比較佳為1%以上,更佳為5%以上,進而較佳為10%以上。 When the sintered body of the present invention contains REF 3 , in order to obtain the above-mentioned effect of containing REF 3 , the height ratio of the main peak of REF 3 to the height of the main peak of REaObFc is preferably 1% or more, more preferably It is 5% or more, and it is more preferable that it is 10% or more.

本發明之燒結體反映為緻密,且相對密度較高。藉由製成相對密度較高之燒結體,可使鹵素系腐蝕氣體等腐蝕氣體之阻隔性較高。本發明之燒結體由於緻密性較高,腐蝕氣體之阻隔性優異,故而於將其用於例如半導體裝置之構成構件之情形時,可防止腐蝕氣體或藥液流入至該構件內部。因此,本發明之燒結體於腐蝕氣體或藥液中之防腐蝕性能較高。如此腐蝕氣體之阻隔性較高之構件例如適用於蝕刻裝置之真空腔室構成構件或蝕刻氣體供給口、聚焦環、晶圓保持器等。又,對藥液之阻隔性較高適於濕式蝕刻之容器等構件。就使本發明之燒結體更加緻密之觀點而言,該燒結體之相對密度較佳為90%以上,更佳為95%以上,特佳為98%以上。相對密度可藉由下述方法來測定。The sintered body of the present invention is dense and has a relatively high density. By producing a sintered body with a relatively high density, the barrier properties of corrosive gases such as halogen-based corrosive gases can be increased. The sintered body of the present invention has high density and excellent corrosive gas barrier properties. Therefore, when it is used as a component of a semiconductor device, for example, it can prevent corrosive gas or chemical liquid from flowing into the component. Therefore, the sintered body of the present invention has higher anti-corrosion performance in corrosive gas or chemical liquid. Such a member with a high barrier property to etching gas is suitable for, for example, a vacuum chamber component of an etching apparatus, an etching gas supply port, a focus ring, a wafer holder, and the like. In addition, it has high barrier properties against chemical liquids and is suitable for wet etching of containers and other components. From the viewpoint of making the sintered body of the present invention denser, the relative density of the sintered body is preferably 90% or more, more preferably 95% or more, and particularly preferably 98% or more. Relative density can be measured by the following method.

進而,就提昇耐蝕性之觀點而言,孔隙率、尤其是開口孔隙率(OP)越小越好。開口孔隙率較佳為1質量%以下,進而較佳為0.5質量%以下,特佳為0.3質量%以下。孔隙率(開口孔隙率)可藉由下述方法來測定。Furthermore, from the viewpoint of improving corrosion resistance, the smaller the porosity, especially the open porosity (OP), the better. The open porosity is preferably 1 mass% or less, further preferably 0.5 mass% or less, and particularly preferably 0.3 mass% or less. Porosity (open porosity) can be measured by the following method.

具有上述相對密度及開口孔隙率(OP)之燒結體可藉由下述方式獲得:在藉由下述較佳之製造方法製造本發明之燒結體時,調整其溫度條件或壓力條件。A sintered body having the above relative density and open porosity (OP) can be obtained by adjusting the temperature conditions or pressure conditions when manufacturing the sintered body of the present invention by the following preferred manufacturing method.

本發明人之燒結體緻密且硬度較高,可更有效地防止腐蝕氣體或藥液流入至構件內部,於鹵素系電漿等電漿及藥液中之耐蝕性優異。具體而言,於本發明之燒結體中,維氏硬度較佳為3 GPa以上,更佳為4 GPa以上。又,維氏硬度越大越好,但就燒結體之製造容易性之觀點而言,更佳為8 GPa以下,進而較佳為7 GPa以下。 維氏硬度可藉由下述實施例中所記載之方法來測定。 The inventor's sintered body is dense and has high hardness, which can more effectively prevent corrosive gases or chemical liquids from flowing into the interior of the component, and has excellent corrosion resistance in plasmas and chemical liquids such as halogen-based plasmas. Specifically, in the sintered body of the present invention, the Vickers hardness is preferably 3 GPa or more, more preferably 4 GPa or more. In addition, the larger the Vickers hardness is, the better. However, from the viewpoint of ease of manufacturing the sintered body, it is more preferably 8 GPa or less, and further more preferably 7 GPa or less. Vickers hardness can be measured by the method described in the following examples.

本發明之燒結體因具有特定組成而對於電漿或藥液有耐蝕性,因此適宜用作暴露於電漿之表面由該燒結體形成之耐電漿構件、或會與濕式蝕刻之藥液接觸之表面由該燒結體形成之耐藥液構件。The sintered body of the present invention has a specific composition and is corrosion-resistant to plasma or chemical liquids. Therefore, it is suitable for use as a plasma-resistant member formed from the sintered body on a surface exposed to plasma, or in contact with chemical liquids in wet etching. A liquid-resistant component whose surface is formed from the sintered body.

耐電漿構件較佳為於半導體之電漿處理工藝所利用之氟系及氯系等鹵素系腐蝕性氣體存在下暴露於電漿之構件,亦可稱為電漿處理裝置用構件。作為耐電漿構件,具體而言,可例舉:電漿蝕刻裝置中之真空腔室等腔室或腔室內部所使用者。作為腔室內部所使用之耐電漿構件,例如可例舉:於半導體元件製造步驟中,對基板等進行電漿蝕刻處理時所使用之聚焦環、簇射頭、靜電吸盤、頂板或氣體噴嘴等。作為鹵素系腐蝕性氣體,已知SF 6、CF 4、CHF 3、ClF 3、HF等氟系氣體、Cl 2、HCl、BCl 3等氯系氣體、Br 2、HBr、BBr 3等溴系氣體及碘系氣體等,但並不限定於此。 Plasma-resistant components are preferably components exposed to plasma in the presence of halogen-based corrosive gases such as fluorine-based and chlorine-based gases used in plasma processing processes for semiconductors, and may also be referred to as components for plasma processing equipment. Specific examples of the plasma-resistant member include those used in a chamber such as a vacuum chamber in a plasma etching apparatus or within the chamber. Examples of plasma-resistant members used inside the chamber include focusing rings, shower heads, electrostatic chucks, top plates, or gas nozzles used when plasma etching substrates during semiconductor device manufacturing steps. . As halogen-based corrosive gases, fluorine-based gases such as SF 6 , CF 4 , CHF 3 , ClF 3 , and HF, chlorine-based gases such as Cl 2 , HCl, and BCl 3 , and bromine-based gases such as Br 2 , HBr, and BBr 3 are known. and iodine-based gases, etc., but are not limited thereto.

耐藥液構件較佳為半導體製造時之濕式蝕刻所利用之容器等與濕式蝕刻之藥液接觸之構件。作為濕式蝕刻之藥液,有氫氟酸、鹽酸等鹵素系或非鹵素系者,又,使用酸系藥液或丙烯酸系藥液,於本發明中,可為任一者,但對鹵素系藥液特別有效。The liquid-resistant member is preferably a member such as a container used in wet etching during semiconductor manufacturing that comes into contact with the chemical liquid for wet etching. As a chemical liquid for wet etching, there are halogen-based or non-halogen-based liquids such as hydrofluoric acid and hydrochloric acid. In addition, an acid-based liquid or an acrylic-based liquid is used. In the present invention, any one can be used. However, for halogen The liquid medicine is particularly effective.

本發明之燒結體除用於半導體製造裝置內部或其構成構件以外,還可用於各種電漿處理裝置、化學設備之構成構件之用途。The sintered body of the present invention can be used not only inside semiconductor manufacturing equipment or as a component thereof, but also as a component of various plasma processing equipment and chemical equipment.

本發明之燒結體可適宜地藉由對本發明之燒結體用材料進行燒結而獲得。 於上述燒結步驟中,使用加壓機或焙燒爐等對燒結體用材料進行成形及燒結。 於本步驟中,可分別進行成形步驟與燒結步驟,亦可使用加壓燒結同時進行成形步驟之至少一部分及燒結步驟。關於同時進行成形步驟之至少一部分及燒結步驟之情況,例如可例舉:使燒結體用材料成形後進行加壓燒結之情況等。又,亦具有組合模具成形及均壓成形(CIP)等組合2個階段之成形步驟之情況、或組合常壓燒結及加壓燒結等組合2個階段以上之燒結步驟而進行之情況。 The sintered body of the present invention can be suitably obtained by sintering the material for sintered bodies of the present invention. In the above-mentioned sintering step, a press machine, a baking furnace, etc. are used to shape and sinter the material for the sintered body. In this step, the forming step and the sintering step can be performed separately, or pressure sintering can be used to simultaneously perform at least part of the forming step and the sintering step. An example of the case where at least a part of the shaping step and the sintering step are performed simultaneously is a case where the material for the sintered body is molded and then pressure-sintered. In addition, there are cases where two-stage molding steps are combined, such as combined mold forming and uniform pressure forming (CIP), or two or more stages of sintering steps, such as combination of normal pressure sintering and pressure sintering, are sometimes performed.

於本製作方法中,作為原料粉末之成形步驟,可使用模具加壓法、橡膠加壓(均壓加壓)法、片材成形法、擠壓成形法、鑄漿成形法等。成形後之燒結可組合非加壓燒結法、氣體壓力燒結法、熱均壓加壓(HIP)、熱壓(HP)或脈衝通電加壓(SPS)等各種燒結方法中之一種或兩種以上使用。再者,各種「成形法」有時亦記載為「成型法」。In this production method, as the molding step of the raw material powder, a mold pressing method, a rubber pressing (equal pressure pressing) method, a sheet forming method, an extrusion forming method, a slurry forming method, etc. can be used. Sintering after forming can be combined with one or more of various sintering methods such as non-pressure sintering, gas pressure sintering, hot equalizing pressure (HIP), hot pressing (HP) or pulsed power pressing (SPS). use. Furthermore, various "forming methods" are sometimes described as "forming methods."

上述燒結方法中,就可獲得緻密且硬度較高,具有優異之耐化學品性及耐電漿性之燒結體之方面而言,較佳為氣體壓力燒結法、熱均壓加壓(HIP)、熱壓(HP)或脈衝通電加壓(SPS)等加壓燒結法。 加壓燒結之壓力適宜例舉10~100 MPa,溫度適宜例舉700~1100℃。 於使用非加壓燒結法之情形時,作為成形步驟,雖不似加壓燒結法,但就可獲得非常緻密且硬度較高,具有優異之耐化學品性及耐電漿性之燒結體之方面而言,較佳為藉由模具加壓法進行一次成形,進而藉由橡膠加壓法進行二次成形。 模具加壓法之壓力較佳為10~100 MPa,橡膠加壓法之加壓壓力較佳為50~300 MPa,常壓燒結之溫度較佳為1000~1600℃。 再者,成形模具或焙燒模具、衝頭、模嘴、墊板或敷粉等成形及燒結時分別與燒結體用材料接觸之構件不使用包含Al、尤其是Al及Si者。作為可使用之材質,可例舉:不鏽鋼、碳、氧化釔或橡膠。 燒結氛圍較佳為氬氣或氮氣等惰性氛圍或真空氛圍。再者,所謂真空氛圍係指壓力以絕對壓力計為10 5Pa以下之氛圍。 實施例 Among the above-mentioned sintering methods, in terms of obtaining a dense and high-hardness sintered body with excellent chemical resistance and plasma resistance, the gas pressure sintering method, hot equalizing pressure (HIP), and Pressure sintering methods such as hot pressing (HP) or pulsed power pressing (SPS). A suitable pressure for pressure sintering is 10 to 100 MPa, and a suitable temperature is 700 to 1100°C. When the non-pressure sintering method is used, as a forming step, although it is not like the pressure sintering method, it is possible to obtain a very dense and hard sintered body with excellent chemical resistance and plasma resistance. Specifically, it is preferable to perform primary molding by a mold pressurizing method, and then perform secondary molding by a rubber pressurizing method. The preferred pressure for the mold pressurizing method is 10 to 100 MPa, the preferred pressurizing pressure for the rubber pressurizing method is 50 to 300 MPa, and the preferred temperature for normal pressure sintering is 1000 to 1600°C. Furthermore, the members that come into contact with the material for the sintered body during molding and sintering, such as the forming mold, the baking mold, the punch, the die nozzle, the backing plate, and the powder coating, are not used to contain Al, especially Al and Si. Examples of usable materials include stainless steel, carbon, yttrium oxide, and rubber. The sintering atmosphere is preferably an inert atmosphere such as argon or nitrogen or a vacuum atmosphere. In addition, the so-called vacuum atmosphere refers to an atmosphere in which the pressure is 10 5 Pa or less in terms of absolute pressure. Example

以下,藉由實施例進一步對本發明進行詳細說明。然而,本發明之範圍不限於該實施例。Hereinafter, the present invention will be further described in detail through examples. However, the scope of the present invention is not limited to this embodiment.

(實施例1) [第1步驟] 向200 L之氧化釔(Y 2O 3)換算25 kg之硝酸釔水溶液中滴加26.6 kg之50質量%氫氟酸,獲得氟化釔前驅物之沈澱物。對所獲得之沈澱物進行再製漿洗淨後,利用離心分離機進行過濾,獲得氟化釔前驅物之濾餅。 [第2步驟] 將適量之第1步驟中所獲得之濾餅裝入至氧化釔匣缽中,利用電爐於大氣氛圍中在650℃下焙燒24小時,獲得氟化釔(YF 3)粉末。再者,所獲得之氟化釔粉末用作實施例1~5之氟化釔原料。 [第3步驟] 將1.06 kg之第2步驟中所獲得之氟化釔粉末與0.94 kg之氧化釔(Y 2O 3)粉末加以混合,投入至氧化釔匣缽中,利用電爐於大氣氛圍中在650℃下焙燒5小時,獲得氟氧化釔粉末。 [第4步驟] 將第3步驟中所獲得之氟氧化釔粉末與純水加以混合,利用珠磨機(珠粒之材質:YSZ;粉碎裝置內表面之材質:聚丙烯)以成為表1中所記載之BET比表面積之方式進行粉碎。粉碎後添加純水而製成500 g/L之氟氧化釔漿料。BET比表面積係採取粉碎過程中之漿料之一部分進行乾燥,以與下述燒結體用材料相同之方法進行測定。 [第5步驟] 使用噴霧乾燥器(大川原加工機股份有限公司製造)(裝置內表面之材質:不鏽鋼)對第4步驟中所獲得之漿料進行造粒、乾燥,獲得氟氧化釔顆粒即燒結體用材料。噴霧乾燥器之操作條件如下所示。 ・漿料供給速度:75 mL/min ・霧化器轉速:12500 rpm ・入口溫度:250℃ [第6步驟] 對於5 g之第5步驟中所獲得之顆粒狀燒結體用材料,使用Sinterland股份有限公司製造之脈衝通電加壓裝置(模嘴之材質:碳;衝頭之材質:碳),於真空氛圍中進行30 MPa、850℃下之加壓燒結,獲得ϕ20 mm×4 mmt之氟氧化釔之燒結體。 (Example 1) [Step 1] To 200 L of yttrium oxide (Y 2 O 3 ), 25 kg of yttrium nitrate aqueous solution was added dropwise to 26.6 kg of 50 mass% hydrofluoric acid to obtain a precipitation of the yttrium fluoride precursor. things. The obtained precipitate is repulped and washed, and then filtered using a centrifuge to obtain a filter cake of the yttrium fluoride precursor. [Step 2] Put an appropriate amount of the filter cake obtained in the first step into an yttrium oxide sagger, and bake it in an electric furnace at 650°C for 24 hours in the air to obtain yttrium fluoride (YF 3 ) powder. Furthermore, the obtained yttrium fluoride powder was used as the yttrium fluoride raw material in Examples 1 to 5. [Step 3] Mix 1.06 kg of yttrium fluoride powder obtained in step 2 and 0.94 kg of yttrium oxide (Y 2 O 3 ) powder, put them into a yttrium oxide sagger, and use an electric furnace in the atmosphere Calculate at 650°C for 5 hours to obtain yttrium oxyfluoride powder. [Step 4] Mix the yttrium oxyfluoride powder obtained in step 3 with pure water, and use a bead mill (material of beads: YSZ; material of the inner surface of the grinding device: polypropylene) to form the powder in Table 1 The BET specific surface area is reported in the method for crushing. After grinding, pure water was added to prepare a 500 g/L yttrium oxyfluoride slurry. The BET specific surface area was measured by taking a part of the slurry during the grinding process, drying it, and using the same method as the material for sintered bodies described below. [Step 5] Use a spray dryer (manufactured by Okawara Processing Machine Co., Ltd.) (material of the inner surface of the device: stainless steel) to granulate and dry the slurry obtained in step 4 to obtain yttrium oxyfluoride particles and sinter them Body materials. The operating conditions of the spray dryer are as follows.・Slurry supply speed: 75 mL/min ・Atomizer rotation speed: 12500 rpm ・Inlet temperature: 250℃ [Step 6] For 5 g of the granular sintered body material obtained in step 5, use Sinterland stock The pulse current pressing device manufactured by the company (material of die nozzle: carbon; material of punch: carbon) is pressure-sintered at 30 MPa and 850°C in a vacuum atmosphere to obtain φ20 mm×4 mmt fluorine oxidation Yttrium sintered body.

(實施例2) 除將供實施例1之第3步驟之混合使用之氟化釔粉末及氧化釔粉末之量變更為1.25 kg之氟化釔粉末及0.75 kg之氧化釔粉末以外,以與實施例1相同之方式,獲得氟氧化釔與氟化釔之混合物之顆粒即燒結體用材料及其燒結體。 (Example 2) In the same manner as in Example 1, except that the amounts of yttrium fluoride powder and yttrium oxide powder used for mixing in the third step of Example 1 are changed to 1.25 kg of yttrium fluoride powder and 0.75 kg of yttrium oxide powder. , to obtain particles of a mixture of yttrium oxyfluoride and yttrium fluoride, which are materials for sintered bodies and their sintered bodies.

(實施例3) 除將供實施例1之第3步驟之混合使用之氟化釔粉末及氧化釔粉末之量變更為1.44 kg之氟化釔粉末及0.56 kg之氧化釔粉末以外,以與實施例1相同之方式,獲得氟氧化釔與氟化釔之混合物之顆粒即燒結體用材料及其燒結體。 (Example 3) In the same manner as in Example 1, except that the amounts of yttrium fluoride powder and yttrium oxide powder used for mixing in the third step of Example 1 are changed to 1.44 kg of yttrium fluoride powder and 0.56 kg of yttrium oxide powder. , to obtain particles of a mixture of yttrium oxyfluoride and yttrium fluoride, which are materials for sintered bodies and their sintered bodies.

(實施例4) 除將供實施例1之第3步驟之混合使用之氟化釔粉末及氧化釔粉末之量變更為1.62 kg之氟化釔粉末及0.38 kg之氧化釔粉末以外,以與實施例1相同之方式,獲得氟氧化釔與氟化釔之混合物之顆粒即燒結體用材料及其燒結體。 (Example 4) In the same manner as in Example 1, except that the amounts of yttrium fluoride powder and yttrium oxide powder used for mixing in the third step of Example 1 were changed to 1.62 kg of yttrium fluoride powder and 0.38 kg of yttrium oxide powder. , to obtain particles of a mixture of yttrium oxyfluoride and yttrium fluoride, which are materials for sintered bodies and their sintered bodies.

(實施例5) 除將供實施例1之第3步驟之混合使用之氟化釔粉末及氧化釔粉末之量變更為1.81 kg之氟化釔粉末及0.19 kg之氧化釔粉末以外,以與實施例1相同之方式,獲得氟氧化釔與氟化釔之混合物之顆粒即燒結體用材料及其燒結體。 (Example 5) In the same manner as in Example 1, except that the amounts of yttrium fluoride powder and yttrium oxide powder used for mixing in the third step of Example 1 were changed to 1.81 kg of yttrium fluoride powder and 0.19 kg of yttrium oxide powder. , to obtain particles of a mixture of yttrium oxyfluoride and yttrium fluoride, which are materials for sintered bodies and their sintered bodies.

(實施例6) 除將實施例1之第2步驟之焙燒溫度由650℃變更為750℃以外,以與實施例1相同之方式,獲得氟氧化釔顆粒即燒結體用材料及其燒結體。 (Example 6) In the same manner as in Example 1, except that the baking temperature in the second step of Example 1 was changed from 650°C to 750°C, yttrium oxyfluoride particles, that is, a sintered body material and a sintered body thereof were obtained.

(實施例7) 將實施例1之第2步驟之焙燒溫度由650℃變更為850℃,於第4步驟中向漿料中添加以總量計為4質量%之有機物黏合劑,除此以外,以與實施例1相同之方式,獲得氟氧化釔顆粒即燒結體用材料。又,對第5步驟中所獲得之顆粒狀燒結體用材料以49 MPa之壓力進行模具成形(模具之材質:不鏽鋼)後,以294 MPa之壓力進行均壓成形(模具之材質:橡膠),將所獲得之成形體於氬氣氛圍中在1500℃下焙燒2小時(焙燒用墊板之材質:氧化釔)來代替上述第6步驟之使用脈衝通電加壓裝置之加壓燒結,除此以外,以與實施例1相同之方式,獲得氟氧化釔之燒結體。 (Example 7) In the second step of Example 1, the calcining temperature was changed from 650°C to 850°C, and in the fourth step, a total amount of 4% by mass of an organic binder was added to the slurry. 1 In the same manner, yttrium oxyfluoride particles, which are materials for sintered bodies, are obtained. Furthermore, the granular sintered body material obtained in step 5 was molded at a pressure of 49 MPa (material of the mold: stainless steel), and then uniformly pressure molded at a pressure of 294 MPa (material of the mold: rubber). The obtained molded body was baked at 1500°C for 2 hours in an argon atmosphere (the material of the backing plate for baking: yttrium oxide), instead of the pressure sintering using a pulse current pressing device in the sixth step above. , in the same manner as in Example 1, a sintered body of yttrium oxyfluoride was obtained.

(實施例8) 將實施例7之第2步驟之焙燒溫度變更為550℃,將供第3步驟之混合使用之氟化釔粉末及氧化釔粉末之量變更為1.15 kg之氟化釔粉末及0.85 kg之氧化釔粉末,並將第5步驟之霧化器轉速變更為20000 rpm,除此以外,以與實施例7相同之方式,獲得氟氧化釔與氟化釔之混合物之顆粒即燒結體用材料及其燒結體。 (Example 8) The calcining temperature in the second step of Example 7 was changed to 550°C, and the amounts of yttrium fluoride powder and yttrium oxide powder used for mixing in the third step were changed to 1.15 kg of yttrium fluoride powder and 0.85 kg of yttrium oxide. powder, and the atomizer rotation speed in step 5 is changed to 20000 rpm. In addition, in the same manner as in Example 7, particles of a mixture of yttrium oxyfluoride and yttrium fluoride, that is, a sintered body material and its sintering are obtained. body.

(實施例9) 使用熱壓(HP)於氬氣氛圍中在20 MPa、920℃下對第5步驟中所獲得之顆粒狀燒結體用材料進行加壓燒結(衝頭之材質:碳;模嘴之材質:碳)來代替實施例3之第6步驟之使用脈衝通電加壓裝置之加壓燒結,除此以外,以與實施例3相同之方式,獲得氟氧化釔與氟化釔之混合物之顆粒即燒結體用材料及其燒結體。 (Example 9) The material for the granular sintered body obtained in step 5 is pressure-sintered using hot pressing (HP) in an argon atmosphere at 20 MPa and 920°C (material of punch: carbon; material of die nozzle: carbon ) in place of the pressure sintering using a pulse current pressing device in step 6 of Example 3, except that in the same manner as in Example 3, particles of a mixture of yttrium oxyfluoride and yttrium fluoride, that is, a sintered body were obtained materials and their sintered bodies.

(實施例10) 將實施例1之稀土類元素(RE)由釔(Y)變更為鑭(La),於第1步驟中向20 L之氧化鑭(La 2O 3)換算2.5 kg之硝酸鑭水溶液中滴加1.8 kg之50質量%氫氟酸,獲得氟化鑭前驅物之沈澱物,藉此於第2步驟中獲得氟化鑭(LaF 3)粉末。進而,關於第3步驟中之混合,將1.73 kg之第2步驟中所獲得之氟化鑭粉末與0.27 kg之氧化鑭(La 2O 3)粉末加以混合。除該等操作以外,以與實施例1相同之方式,獲得氟氧化鑭與氟化鑭之混合物之顆粒即燒結體用材料及其燒結體。 (Example 10) The rare earth element (RE) in Example 1 was changed from yttrium (Y) to lanthanum (La). In the first step, 2.5 kg of nitric acid was converted into 20 L of lanthanum oxide (La 2 O 3 ). 1.8 kg of 50 mass% hydrofluoric acid was added dropwise to the lanthanum aqueous solution to obtain a precipitate of the lanthanum fluoride precursor, thereby obtaining lanthanum fluoride (LaF 3 ) powder in the second step. Furthermore, regarding the mixing in the third step, 1.73 kg of the lanthanum fluoride powder obtained in the second step and 0.27 kg of the lanthanum oxide (La 2 O 3 ) powder were mixed. Except for these operations, in the same manner as in Example 1, particles of a mixture of lanthanum oxyfluoride and lanthanum fluoride, that is, a material for a sintered body and a sintered body thereof were obtained.

(實施例11) 將實施例1之稀土類元素由釔變更為釓(Gd),於第1步驟中向40 L之氧化釓(Gd 2O 3)換算5 kg之硝酸釓水溶液中滴加3.3 kg之50質量%氫氟酸,獲得氟化釓前驅物之沈澱物,藉此於第2步驟中獲得氟化釓粉末。進而,關於第3步驟中之混合,將1.09 kg之第2步驟中所獲得之氟化釓(GdF 3)粉末與0.91 kg之氧化釓(Gd 2O 3)粉末加以混合。除該等操作以外,以與實施例1相同之方式,獲得氟氧化釓與氟化釓之混合物之顆粒即燒結體用材料及其燒結體。 (Example 11) The rare earth element in Example 1 was changed from yttrium to gallium (Gd), and in the first step, 3.3 ml of gallium nitrate aqueous solution converted into 5 kg of 40 L of gallium oxide (Gd 2 O 3 ) was added dropwise. kg of 50 mass% hydrofluoric acid to obtain a precipitate of the gallium fluoride precursor, thereby obtaining gallium fluoride powder in the second step. Furthermore, regarding the mixing in the third step, 1.09 kg of the gallium fluoride (GdF 3 ) powder obtained in the second step and 0.91 kg of the gallium oxide (Gd 2 O 3 ) powder were mixed. Except for these operations, in the same manner as in Example 1, particles of a mixture of gallium oxyfluoride and gallium fluoride, that is, a sintered body material and a sintered body thereof were obtained.

(實施例12) 關於實施例11之第3步驟中之混合,將1.55 kg之第2步驟中所獲得之氟化釓粉末與0.45 kg之氧化釓粉末加以混合,除此以外,以與實施例11相同之方式,獲得氟氧化釓與氟化釓之混合物之顆粒即燒結體用材料及其燒結體。 (Example 12) Regarding the mixing in the third step of Example 11, 1.55 kg of the gallium fluoride powder obtained in the second step and 0.45 kg of the gallium oxide powder were mixed, in the same manner as in Example 11, The particles of the mixture of gallium oxyfluoride and gallium fluoride are obtained, which are the material for the sintered body and the sintered body thereof.

(實施例13) 將實施例1之稀土類元素由釔變更為鉺(Er),於第1步驟中向20 L之氧化鉺(Er 2O 3)換算2.5 kg之硝酸鉺水溶液中滴加1.6 kg之50質量%氫氟酸,獲得氟化鉺前驅物之沈澱物,藉此於第2步驟中獲得氟化鉺(ErF 3)粉末。進而,關於第3步驟中之混合,將1.36 kg之第2步驟中所獲得之氟化鉺粉末與0.64 kg之氧化鉺(Er 2O 3)粉末加以混合。除該等操作以外,以與實施例1相同之方式,獲得氟氧化鉺與氟化鉺之混合物之顆粒即燒結體用材料及其燒結體。 (Example 13) The rare earth element in Example 1 was changed from yttrium to erbium (Er). In the first step, 1.6 erbium nitrate aqueous solution was added dropwise to 20 L of erbium oxide (Er 2 O 3 ) to convert 2.5 kg of erbium nitrate aqueous solution. kg of 50 mass% hydrofluoric acid to obtain a precipitate of the erbium fluoride precursor, thereby obtaining erbium fluoride (ErF 3 ) powder in the second step. Furthermore, regarding the mixing in the third step, 1.36 kg of the erbium fluoride powder obtained in the second step and 0.64 kg of the erbium oxide (Er 2 O 3 ) powder were mixed. Except for these operations, in the same manner as in Example 1, particles of a mixture of erbium oxyfluoride and erbium fluoride, that is, a material for a sintered body and a sintered body thereof were obtained.

(實施例14) 將實施例1之稀土類元素由釔變更為鐿(Yb),於第1步驟中向40 L之氧化鐿(Yb 2O 3)換算5 kg之硝酸鐿水溶液中滴加3 kg之50質量%氫氟酸,獲得氟化鐿前驅物之沈澱物,藉此於第2步驟中獲得氟化鐿粉末。進而,關於第3步驟中之混合,將1.01 kg之第2步驟中所獲得之氟化鐿(YbF 3)粉末與0.99 kg之氧化鐿(Yb 2O 3)粉末加以混合。除該等操作以外,以與實施例1相同之方式,獲得氟氧化鐿顆粒即燒結體用材料及其燒結體。 (Example 14) The rare earth element in Example 1 was changed from yttrium to ytterbium (Yb). In the first step, 3 drops of 3 kg of ytterbium nitrate aqueous solution was added to 40 L of ytterbium oxide (Yb 2 O 3 ) to convert 5 kg of ytterbium nitrate aqueous solution. kg of 50 mass% hydrofluoric acid to obtain a precipitate of the ytterbium fluoride precursor, thereby obtaining ytterbium fluoride powder in the second step. Furthermore, regarding the mixing in the third step, 1.01 kg of the ytterbium fluoride (YbF 3 ) powder obtained in the second step and 0.99 kg of the ytterbium oxide (Yb 2 O 3 ) powder were mixed. Except for these operations, in the same manner as in Example 1, ytterbium oxyfluoride particles, that is, a material for a sintered body and a sintered body thereof were obtained.

(實施例15) 關於實施例14之第3步驟中之混合,將1.84 kg之第2步驟中所獲得之氟化鐿粉末與0.16 kg之氧化鐿粉末加以混合,除此以外,以與實施例14相同之方式,獲得氟氧化鐿與氟化鐿之混合物之顆粒即燒結體用材料及其燒結體。 (Example 15) Regarding the mixing in the third step of Example 14, 1.84 kg of the ytterbium fluoride powder obtained in the second step and 0.16 kg of the ytterbium oxide powder were mixed. Otherwise, in the same manner as in Example 14, The particles of the mixture of ytterbium oxyfluoride and ytterbium fluoride are obtained, which are the material for the sintered body and the sintered body thereof.

(實施例16) 將實施例1之稀土類元素由釔變更為鎦(Lu),於第1步驟中向20 L之氧化鎦(Lu 2O 3)換算2.5 kg之硝酸鎦水溶液中滴加1.5 kg之50質量%氫氟酸,獲得氟化鎦前驅物之沈澱物,藉此於第2步驟中獲得氟化鎦(LuF 3)粉末。進而,關於第3步驟中之混合,將1.01 kg之第2步驟中所獲得之氟化鎦粉末與0.99 kg之氧化鎦(Lu 2O 3)粉末加以混合,除此以外,以與實施例1相同之方式,獲得氟氧化鎦與氟化鎦之混合物之顆粒即燒結體用材料及其燒結體。 (Example 16) The rare earth element in Example 1 was changed from yttrium to phosphorus (Lu). In the first step, 1.5 kg of phosphorus nitrate aqueous solution was added dropwise to 20 L of phosphorus oxide (Lu 2 O 3 ) to 2.5 kg. kg of 50 mass% hydrofluoric acid to obtain a precipitate of the phosphonium fluoride precursor, thereby obtaining phosphonium fluoride (LuF 3 ) powder in the second step. Furthermore, regarding the mixing in the third step, the same procedure as in Example 1 was performed except that 1.01 kg of the phosphorus fluoride powder obtained in the second step and 0.99 kg of the phosphorus oxide (Lu 2 O 3 ) powder were mixed. In the same manner, particles of a mixture of phosphorus oxyfluoride and phosphorus fluoride, that is, a sintered body material and its sintered body are obtained.

(比較例1) 使用專利文獻3中所記載之實施例6之製作方法來製作。 (一)A步驟:混合 將日本Yttrium公司製造之細粉氧化釔(Y 2O 3)(D *50D:0.24 μm;碳:0.1質量%)與日本Yttrium公司製造之氟化釔(YF 3)(D *50D:7.4 μm;碳:0.05質量%)以LnF 3/Ln=0.55莫耳比加以混合。 (二)B步驟:焙燒 將A步驟中所獲得之混合品裝入至氧化鋁製之皿中,利用電爐於大氣氛圍中在950℃下焙燒8小時。 (三)C步驟:粉碎 將B步驟中所獲得之焙燒品利用霧化器(裝置內部之材質:氧化鋁)進行乾式粉碎後,與相同質量之純水進行混合,藉由使用直徑0.8 mm之氧化釔穩定氧化鋯(YSZ)球之珠磨機(裝置內表面之材質:氧化鋯強化氧化鋁)進行4小時粉碎。其後,藉由使用直徑0.4 mm之氧化釔穩定氧化鋯(YSZ)球之珠磨機(裝置內部之材質:氧化鋯強化氧化鋁)進行3小時粉碎而獲得濕式粉碎漿料。 (四)D步驟:噴霧乾燥 向C步驟中所獲得之濕式粉碎漿料中添加丙烯酸系黏合劑及純水,進行混合,使漿料濃度成為1000 g/L,將黏合劑相對於漿料中所包含之粉末之量設為3.5質量%。 將該漿料使用噴霧乾燥器(大河原化工機股份有限公司(裝置內表面之材質:不鏽鋼)進行噴霧乾燥,獲得顆粒狀燒結體用材料。噴霧乾燥器之操作條件如下所示。 ・漿料供給速度:300 mL/min ・霧化器轉速:9000 min -1・入口溫度:200℃ (五)E步驟 對於D步驟中所獲得之燒結體用材料,以49 MPa之壓力進行模具成形(模具之材質:不鏽鋼)後,以294 MPa之壓力進行均壓成形(模具之材質:橡膠)。將所獲得之成形體於氬氣氛圍中在1500℃下焙燒2小時(燒結用墊板之材質:氧化釔),於電爐中自然放置冷卻至150℃,獲得氟氧化釔之燒結體。 (Comparative Example 1) It was produced using the production method of Example 6 described in Patent Document 3. (1) Step A: Mix fine powder yttrium oxide (Y 2 O 3 ) (D *50D : 0.24 μm; carbon: 0.1 mass%) manufactured by Japan Yttrium Company and yttrium fluoride (YF 3 ) manufactured by Japan Yttrium Company (D *50D : 7.4 μm; carbon: 0.05% by mass) was mixed at a molar ratio of LnF 3 /Ln = 0.55. (2) Step B: Roasting The mixture obtained in step A was put into an alumina dish, and roasted at 950° C. for 8 hours using an electric furnace in the air. (3) Step C: Crushing. The roasted product obtained in step B is dry-pulverized using an atomizer (material inside the device: alumina), and then mixed with pure water of the same mass. By using a 0.8 mm diameter atomizer, Yttria-stabilized zirconia (YSZ) balls were crushed in a bead mill (material of the inner surface of the device: zirconia-reinforced alumina) for 4 hours. Thereafter, the wet grinding slurry was obtained by grinding for 3 hours using a bead mill with yttria-stabilized zirconia (YSZ) balls with a diameter of 0.4 mm (material inside the device: zirconia-reinforced alumina). (4) Step D: Spray drying Add an acrylic binder and pure water to the wet grinding slurry obtained in step C, and mix so that the slurry concentration becomes 1000 g/L. The amount of powder contained in was set to 3.5% by mass. This slurry was spray-dried using a spray dryer (Ogawara Chemical Machinery Co., Ltd. (material of the inner surface of the device: stainless steel)) to obtain a granular sintered body material. The operating conditions of the spray dryer are as follows. ・Slurry supply Speed: 300 mL/min ・Atomizer rotation speed: 9000 min -1・Inlet temperature: 200℃ (5) Step E: For the material for the sintered body obtained in step D, mold the material for the sintered body obtained in step D at a pressure of 49 MPa (mold Material: stainless steel), then perform equalization molding at a pressure of 294 MPa (mold material: rubber). The obtained molded body is fired at 1500°C for 2 hours in an argon atmosphere (material of sintering backing plate: oxidized Yttrium), placed naturally in an electric furnace and cooled to 150°C to obtain a sintered body of yttrium oxyfluoride.

(比較例2) 不進行比較例1之A步驟及B步驟,僅將日本Yttrium公司製造之氟化釔(YF 3)(D *50D:7.4 μm;碳:0.05質量%)供C步驟使用及將E步驟之燒結溫度設為1000℃,除此以外,以與比較例1相同之方式,獲得氟化釔之燒結體。 (Comparative Example 2) Steps A and B of Comparative Example 1 were not performed, and only yttrium fluoride (YF 3 ) (D *50D : 7.4 μm; carbon: 0.05 mass%) manufactured by Japan Yttrium Co., Ltd. was used for step C. A sintered body of yttrium fluoride was obtained in the same manner as in Comparative Example 1 except that the sintering temperature in step E was 1000°C.

(比較例3) 不進行比較例1之A步驟及B步驟,僅將日本Yttrium公司製造之細粉氧化釔(Y 2O 3)(D *50D:0.24 μm;碳:0.1質量%)供C步驟使用,將E步驟之氛圍設為大氣氛圍中,將燒結溫度設為1600℃,除此以外,以與比較例1相同之方式,獲得氧化釔之燒結體。 (Comparative Example 3) Steps A and B of Comparative Example 1 were not performed, and only fine powder yttrium oxide (Y 2 O 3 ) (D *50D : 0.24 μm; carbon: 0.1 mass%) manufactured by Japan Yttrium Co., Ltd. was used as C. A sintered body of yttrium oxide was obtained in the same manner as in Comparative Example 1 except that the atmosphere in step E was set to the atmospheric atmosphere and the sintering temperature was set to 1600°C.

(比較例4) 將適量之實施例1之第1步驟中所獲得之氟化釔前驅物之濾餅裝入至莫來石匣缽中,利用電爐於大氣氛圍中在900℃下焙燒24小時,獲得氟化釔塊。其後,利用石磨粉碎機進行粉碎,獲得氟化釔粉末。將1.72 kg之所獲得之氟化釔粉末與0.28 kg之氧化釔加以混合,裝入至莫來石匣缽中,利用電爐於大氣氛圍中在900℃下焙燒5小時,獲得氟氧化釔粉末。對於所獲得之粉末中之5 g,使用Sinterland股份有限公司製造之脈衝通電加壓裝置(模嘴之材質:碳;衝頭之材質:碳),於真空氛圍中在30 MPa、850℃下進行加壓燒結,獲得ϕ20 mm×4 mmt之氟氧化釔之燒結體。 (Comparative example 4) Put an appropriate amount of the filter cake of the yttrium fluoride precursor obtained in the first step of Example 1 into a mullite sagger, and use an electric furnace to bake it at 900°C for 24 hours in the air to obtain yttrium fluoride. block. Thereafter, the powder was pulverized using a stone mill to obtain yttrium fluoride powder. 1.72 kg of the obtained yttrium fluoride powder and 0.28 kg of yttrium oxide were mixed, put into a mullite sagger, and roasted at 900°C for 5 hours in an electric furnace in the air to obtain yttrium oxyfluoride powder. 5 g of the obtained powder was processed in a vacuum atmosphere at 30 MPa and 850°C using a pulse current pressurizing device manufactured by Sinterland Co., Ltd. (material of die nozzle: carbon; material of punch: carbon). Pressurize and sinter to obtain a φ20 mm×4 mmt yttrium oxyfluoride sintered body.

(比較例5) 除使實施例3之第2步驟所使用之匣缽由莫來石製造以及將第2步驟之焙燒溫度及時間設為900℃、24小時以外,以與實施例3相同之方式,獲得氟氧化釔之燒結體。 (Comparative example 5) In the same manner as in Example 3, except that the sagger used in the second step of Example 3 was made of mullite and the baking temperature and time of the second step were set to 900° C. and 24 hours, fluorine oxidation was obtained. Yttrium sintered body.

(比較例6) 於第6步驟中,將實施例1之第5步驟中所獲得之顆粒裝入至莫來石匣缽中,利用電爐於大氣氛圍中在900℃下焙燒5小時,除此以外,以與實施例1相同之方式,獲得氟氧化釔之燒結體。 (Comparative example 6) In the 6th step, the particles obtained in the 5th step of Example 1 were put into a mullite sagger and roasted at 900° C. for 5 hours using an electric furnace in the air. In the same manner as in Example 1, a sintered body of yttrium oxyfluoride was obtained.

(測定、評價) 對於所獲得之燒結體用材料,藉由以下方法測定表1中所記載之項目。將結果示於表1。 (measurement, evaluation) The obtained material for sintered bodies was measured for the items listed in Table 1 by the following method. The results are shown in Table 1.

<氧量(質量%)> 藉由惰性氣體中熔解-紅外吸收法(其中,使用鹵素捕捉)測定氧之質量%。 <Oxygen amount (mass %)> The mass % of oxygen was measured by melting in inert gas-infrared absorption method (in which halogen capture was used).

<F/RE莫耳比> 材料之F(氟)含量係使用Rigaku公司製造之ZSX Primus II並藉由XRF(X-Ray Fluorescence Analysis,X射線螢光分析)法進行測定,換算為每1 kg粉末之稀土類元素之莫耳數。又,材料之RE(稀土類元素)含量係藉由過氯酸溶解-ICP-AES(Inductively Coupled Plasma-Atomic Emission Spectrometry,感應耦合電漿發光分析)法對稀土類元素之質量%進行測定,換算為每1 kg粉末之稀土類元素之莫耳數。根據所求出之F(氟)含量及RE(稀土類元素)含量,求出F/RE莫耳比。 <F/RE Molby> The F (fluorine) content of the material was measured by the XRF (X-Ray Fluorescence Analysis) method using the ZSX Primus II manufactured by Rigaku Corporation, and was converted into moles of rare earth elements per 1 kg of powder. Count. In addition, the RE (rare earth element) content of the material is measured by perchloric acid dissolution-ICP-AES (Inductively Coupled Plasma-Atomic Emission Spectrometry, inductively coupled plasma luminescence analysis) method to measure the mass % of rare earth elements and convert It is the number of moles of rare earth elements per 1 kg of powder. Based on the calculated F (fluorine) content and RE (rare earth element) content, the F/RE molar ratio is calculated.

<燒結體用材料之X射線繞射測定> 進而,為了去除有機物而將所獲得之燒結體用材料於大氣氛圍下在550℃下焙燒2小時,對上述操作所得者利用以下方法並藉由粉末X射線繞射測定法進行X射線繞射測定。將特定出結晶相之結果示於表1。再者,表1中之X射線繞射峰強度為源自各化合物之結晶相之主峰之峰高比,且表示將2θ=20°~60°之主峰之峰高設為100時之值。於各實施例及比較例中,源自除稀土類元素之氟氧化物及REF 3所表示之稀土類元素之氟化物以外之化合物的結晶相之主峰之峰高相對於源自REaObFc之結晶相之主峰之峰高為1%以下。 其中,PDF卡中之主峰位置之差為2θ=0.4°內之Y 5O 4F 7與YF 3、Gd 4O 3F 6與GdF 3、Er 5O 4F 7與ErF 3之組合之實施例1~9、11~13、比較例4~6分別使用相當於上述特定面之波峰之強度(I S)除以特定面之相對強度(主峰之強度為100)(PDF卡中所記載之強度:I T)而得之數值作為主峰之強度(I M)。 再者,於大氣中在550℃下焙燒2小時不會對各實施例及各比較例中之燒結體用材料之組成造成影響。 [X射線繞射測定] ・裝置:UltimaIV(Rigaku股份有限公司製造) ・線源:CuKα線 ・管電壓:40 kV ・管電壓:40 mA ・掃描速度:2度/min ・階變:0.02度 ・掃描範圍:2θ=20°~60° <X-ray Diffraction Measurement of Material for Sintered Body> Furthermore, in order to remove organic matter, the material for sintered body obtained was baked at 550° C. for 2 hours in the air. The result obtained by the above operation was subjected to the following method and powdered X-ray diffraction measurements were performed by X-ray diffractometry. Table 1 shows the results of identifying the crystal phase. In addition, the X-ray diffraction peak intensity in Table 1 is the peak height ratio of the main peak derived from the crystal phase of each compound, and represents the value when the peak height of the main peak of 2θ=20° to 60° is set to 100. In each of the Examples and Comparative Examples, the peak height of the main peak of the crystal phase derived from compounds other than the oxyfluoride of rare earth elements and the fluoride of rare earth elements represented by REF 3 is relative to the peak height of the crystal phase derived from REaObFc The peak height of the main peak is less than 1%. Among them, the difference in the main peak position in the PDF card is the implementation of the combination of Y 5 O 4 F 7 and YF 3 , Gd 4 O 3 F 6 and GdF 3 , Er 5 O 4 F 7 and ErF 3 within 2θ = 0.4°. Examples 1 to 9, 11 to 13, and Comparative Examples 4 to 6 respectively use the intensity ( IS ) corresponding to the peak of the specific surface divided by the relative intensity of the specific surface (the intensity of the main peak is 100) (recorded in the PDF card) Intensity: IT ) The value obtained is used as the intensity of the main peak (I M ). Furthermore, baking at 550° C. for 2 hours in the air did not affect the composition of the materials for the sintered bodies in each of the examples and comparative examples. [X-ray diffraction measurement] ・Device: Ultima IV (manufactured by Rigaku Co., Ltd.) ・Line source: CuKα line ・Tube voltage: 40 kV ・Tube voltage: 40 mA ・Scan speed: 2 degrees/min ・Step change: 0.02 degrees・Scanning range: 2θ=20°~60°

<Al含量之測定方法> 使用Hitachi High-Tech Science公司製造之SPS3520V-DD並藉由過氯酸溶解-ICP-AES分析方法,測定材料中之Al含量。 <Measurement method of Al content> The Al content in the material was measured using SPS3520V-DD manufactured by Hitachi High-Tech Science Co., Ltd. and by perchloric acid dissolution-ICP-AES analysis method.

<Si含量之測定方法> 使用BL-TEC公司製造之連續流動分析裝置(STAA-3)並藉由酸溶解、四氟化矽氣化分離、矽鉬酸藍色吸光光度法,測定材料中之Si含量。 <Measurement method of Si content> The Si content in the material was measured using a continuous flow analysis device (STAA-3) manufactured by BL-TEC Corporation and through acid dissolution, silicon tetrafluoride gasification separation, and silicomolybdic acid blue absorbance photometry.

<灼燒減量> 將作為測定試樣之燒結體用材料於大氣氛圍中在550℃下焙燒2小時後,於乾燥器中藉由自然放置冷卻進行冷卻(以下,將焙燒至冷卻稱為「灼燒處理」)。於灼燒處理前後測定質量。 將下式之值作為灼燒減量。 式:(灼燒處理前之質量-灼燒處理後之質量)/灼燒處理前之質量×100(質量%) <Amount reduction on ignition> The material for the sintered body as the measurement sample was baked at 550° C. for 2 hours in the air, and then cooled by natural cooling in a desiccator (hereinafter, baking to cooling is referred to as "burning treatment"). The mass was measured before and after the burning treatment. Use the value of the following formula as the loss on ignition. Formula: (mass before burning treatment - mass after burning treatment)/mass before burning treatment × 100 (mass %)

<豪斯納比> 藉由豪斯納比=振實密度(g/cm 3)/鬆密度(g/cm 3)來求出。 使用多功能型粉體物性測定器Multitester MT-1001k型(清新企業股份有限公司製造),測定振實法視鬆密度TD(g/cm 3)及靜置法視密度AD(g/cm 3),求出其比。振實法視密度TD(g/cm 3)之測定係按照上述測定器之安裝說明書之「7-1.基於刮平定重量法之振實密度之測定方法」並依據JIS Z 2512來進行,靜置法視鬆密度AD(g/cm 3)之測定係按照上述測定器之安裝說明書之「7-2.靜鬆密度(最疏填充鬆密度)之測定方法」並依據JIS K 5101-12-1來進行。 <Hausner ratio> It is determined by Hausner ratio = tap density (g/cm 3 )/bulk density (g/cm 3 ). The multifunctional powder physical property tester Multitester MT-1001k (manufactured by Qingxin Enterprise Co., Ltd.) was used to measure the apparent bulk density TD (g/cm 3 ) of the tapping method and the apparent density AD (g/cm 3 ) of the standing method. , find its ratio. The measurement of apparent density TD (g/cm 3 ) by tap method is carried out in accordance with "7-1. Measurement method of tap density based on scraping constant weight method" in the installation instructions of the above-mentioned measuring instrument and in accordance with JIS Z 2512, static The apparent bulk density AD (g/cm 3 ) is measured according to "7-2. Measurement method of static bulk density (loosest filling bulk density)" in the installation instructions of the above-mentioned measuring device and in accordance with JIS K 5101-12- 1 to proceed.

<BET比表面積> 關於BET比表面積,使用Mountech公司製造之Macsorb作為測定裝置,藉由BET單點法求出。使用氮氣30體積%-氦氣70體積%之混合氣體作為測定用氣體,使用純氮氣作為校正用氣體。 <BET specific surface area> The BET specific surface area was determined by the BET single-point method using Macsorb manufactured by Mountech Corporation as a measuring device. Use a mixed gas of 30% by volume of nitrogen and 70% by volume of helium as the measurement gas, and use pure nitrogen as the calibration gas.

<平均粒徑D50> 將燒結體用材料投入至裝有純水之日機裝股份有限公司製造之Microtrac 3300EXII之試樣循環器之腔室中直至判定裝置為適當濃度為止,進行測定。 <Average particle size D50> The material for sintered body was put into the chamber of a sample circulator of Microtrac 3300EXII manufactured by Nikkiso Co., Ltd. filled with pure water until the appropriate concentration was determined by the determination device, and the measurement was performed.

<細孔第1波峰、細孔第2波峰、0.05 μm以上0.5 μm以下之細孔容積、5 μm以上50 μm以下之細孔容積> ・裝置:AutoPore IV(麥克儀器公司製造) ・細孔第1波峰:通常,若對包含一次粒子之顆粒之細孔徑分佈進行測定,則可獲得2個波峰,將該波峰中之小徑側之波峰設為細孔第1波峰。 ・細孔第2波峰:將上述波峰中之大徑側之波峰設為細孔第2波峰。 ・0.05 μm以上0.5 μm以下之細孔容積:細孔徑0.05 μm以上0.5 μm以下之細孔容積之累計值(表1之細孔第1容積) ・5 μm以上50 μm以下之細孔容積:細孔徑5 μm以上50 μm以下之細孔容積之累計值(表1之細孔第2容積) <The first peak of pores, the second peak of pores, the pore volume of 0.05 μm or more and 0.5 μm or less, the pore volume of 5 μm or more and 50 μm or less> ・Device: AutoPore IV (manufactured by Micron Instruments Co., Ltd.) ・First pore peak: Generally, when the pore diameter distribution of particles including primary particles is measured, two peaks are obtained, and the peak on the small diameter side of the peaks is regarded as the first pore peak. ・The second wave peak of fine pores: The peak on the larger diameter side of the above-mentioned wave peaks is regarded as the second wave peak of fine pores. ・Pore volume of 0.05 μm or more and 0.5 μm or less: The cumulative value of the pore volume of pore diameters of 0.05 μm or more and 0.5 μm or less (pore volume 1 in Table 1) ・Pore volume of 5 μm or more and 50 μm or less: The cumulative value of the pore volume of pore diameters of 5 μm or more and 50 μm or less (pore second volume in Table 1)

[表1]    稀土類元素(RE) F/RE 莫耳比 粉體物性 氧量[質量%] X射線繞射峰強度 Si含量[質量ppm] Al含量[質量ppm] 有機黏合劑總量[質量%] 灼燒減量[質量%] 鬆密度[g/cm 3] 振實密度[g/cm 3] 豪斯納比 BET[m 2/g] 平均 粒徑[μm] 細孔第1波峰 [μm] 細孔第2波峰 [μm] 細孔第1容積[mL/g] 細孔第2容積 [mL/g] RE-O-F種類 RE-O-F REF 3 RE 2O 3 實施例1 Y 1.4 10 Y 5O 4F 7 100 0 - 18 2 0 <1 1.5 1.7 1.1 6 48 0.10 12.9 0.17 0.27 實施例2 Y 1.7 8 Y 5O 4F 7 100 19 - 16 1 0 <1 1.4 1.6 1.1 5 45 0.12 11.3 0.15 0.24 實施例3 Y 2.1 6 Y 5O 4F 7 100 37 - 15 1 0 <1 1.5 1.6 1.1 5 46 0.13 11.3 0.15 0.25 實施例4 Y 2.3 4 Y 5O 4F 7 100 61 - 20 2 0 <1 1.5 1.7 1.1 5 38 0.12 10.1 0.14 0.25 實施例5 Y 2.7 2 Y 5O 4F 7 100 92 - 200 3 0 <1 1.5 1.8 1.2 5 47 0.13 12.0 0.14 0.23 實施例6 Y 1.4 10 Y 5O 4F 7 100 0 - 300 8 0 <1 1.4 1.6 1.1 4 47 0.18 12.9 0.11 0.26 實施例7 Y 1.5 10 Y 5O 4F 7 100 0 - 500 23 4 5 1.4 1.6 1.1 4 42 0.17 11.3 0.12 0.28 實施例8 Y 1.6 9 Y 5O 4F 7 100 7 - 14 4 4 5 1.3 1.7 1.3 7 28 0.08 9.1 0.19 0.29 實施例9 Y 2.0 6 Y 5O 4F 7 100 38 - 17 3 0 <1 1.4 1.6 1.1 4 45 0.13 11.3 0.14 0.27 實施例10 La 2.5 2 La 10O 7F 16 100 72 - 300 7 0 <1 1.8 2.1 1.2 4 45 0.15 11.3 0.12 0.23 實施例11 Gd 1.5 6 Gd 4O 3F 6 100 4 - 32 2 0 <1 1.9 2.3 1.2 3 46 0.17 12.0 0.16 0.25 實施例12 Gd 2.2 3 Gd 4O 3F 6 100 43 - 400 9 0 <1 2.0 2.2 1.1 3 47 0.20 12.9 0.13 0.26 實施例13 Er 2.0 4 Er 5O 4F 7 100 31 - 50 5 0 <1 2.1 2.4 1.1 3 46 0.18 11.3 0.14 0.30 實施例14 Yb 1.4 6 Yb 5O 4F 7 100 0 - 38 1 0 <1 2.2 2.3 1.0 4 47 0.10 12.9 0.18 0.26 實施例15 Yb 2.7 1 Yb 5O 4F 7 92 100 - 500 8 0 <1 1.9 2.4 1.3 2 48 0.35 13.9 0.12 0.31 實施例16 Lu 1.7 5 Lu 7O 6F 9 100 22 - 27 2 0 <1 2.2 2.5 1.1 3 46 0.21 12.0 0.16 0.25 比較例1 Y 1.0 13 YOF 100 0 - 2200 150 4 4 1.6 1.7 1.1 6 49 0.08 13.9 0.17 0.24 比較例2 Y 3.0 - YF 3 - 100 - 5800 380 4 5 1.7 1.8 1.1 5 45 0.10 12.9 0.14 0.22 比較例3 Y - - Y 2O 3 - - 100 10 1 4 4 1.4 1.5 1.1 10 48 0.18 11.3 0.16 0.29 比較例4 Y 2.5 3 Y 5O 4F 7 100 79 - 4500 280 4 4 0.8 1.5 1.9 2 4 1.37 - 0.01 - 比較例5 Y 2.0 6 Y 5O 4F 7 100 35 - 3200 200 0 <1 1.6 1.8 1.1 4 46 0.18 12.9 0.10 0.27 比較例6 Y 1.4 10 Y 5O 4F 7 100 0 - 1000 74 0 <1 1.5 1.9 1.3 1 48 0.73 15.0 0.03 0.30 [Table 1] Rare earth elements (RE) F/RE Morbi Powder physical properties Oxygen content [mass %] X-ray diffraction peak intensity Si content [mass ppm] Al content [mass ppm] Total amount of organic binder [mass %] Loss on ignition [mass %] Bulk density [g/cm 3 ] Tap density [g/cm 3 ] Hausnaby BET[m 2 /g] Average particle size [μm] The first wave peak of pores [μm] Second wave peak of pores [μm] Pore 1st volume [mL/g] Second volume of pores [mL/g] RE-OF type RE-OF REF 3 RE 2 O 3 Example 1 Y 1.4 10 Y 5 O 4 F 7 100 0 - 18 2 0 <1 1.5 1.7 1.1 6 48 0.10 12.9 0.17 0.27 Example 2 Y 1.7 8 Y 5 O 4 F 7 100 19 - 16 1 0 <1 1.4 1.6 1.1 5 45 0.12 11.3 0.15 0.24 Example 3 Y 2.1 6 Y 5 O 4 F 7 100 37 - 15 1 0 <1 1.5 1.6 1.1 5 46 0.13 11.3 0.15 0.25 Example 4 Y 2.3 4 Y 5 O 4 F 7 100 61 - 20 2 0 <1 1.5 1.7 1.1 5 38 0.12 10.1 0.14 0.25 Example 5 Y 2.7 2 Y 5 O 4 F 7 100 92 - 200 3 0 <1 1.5 1.8 1.2 5 47 0.13 12.0 0.14 0.23 Example 6 Y 1.4 10 Y 5 O 4 F 7 100 0 - 300 8 0 <1 1.4 1.6 1.1 4 47 0.18 12.9 0.11 0.26 Example 7 Y 1.5 10 Y 5 O 4 F 7 100 0 - 500 twenty three 4 5 1.4 1.6 1.1 4 42 0.17 11.3 0.12 0.28 Example 8 Y 1.6 9 Y 5 O 4 F 7 100 7 - 14 4 4 5 1.3 1.7 1.3 7 28 0.08 9.1 0.19 0.29 Example 9 Y 2.0 6 Y 5 O 4 F 7 100 38 - 17 3 0 <1 1.4 1.6 1.1 4 45 0.13 11.3 0.14 0.27 Example 10 La 2.5 2 La 10 O 7 F 16 100 72 - 300 7 0 <1 1.8 2.1 1.2 4 45 0.15 11.3 0.12 0.23 Example 11 Gd 1.5 6 Gd 4 O 3 F 6 100 4 - 32 2 0 <1 1.9 2.3 1.2 3 46 0.17 12.0 0.16 0.25 Example 12 Gd 2.2 3 Gd 4 O 3 F 6 100 43 - 400 9 0 <1 2.0 2.2 1.1 3 47 0.20 12.9 0.13 0.26 Example 13 Er 2.0 4 Er 5 O 4 F 7 100 31 - 50 5 0 <1 2.1 2.4 1.1 3 46 0.18 11.3 0.14 0.30 Example 14 yb 1.4 6 Yb 5 O 4 F 7 100 0 - 38 1 0 <1 2.2 2.3 1.0 4 47 0.10 12.9 0.18 0.26 Example 15 yb 2.7 1 Yb 5 O 4 F 7 92 100 - 500 8 0 <1 1.9 2.4 1.3 2 48 0.35 13.9 0.12 0.31 Example 16 Lu 1.7 5 Lu 7 O 6 F 9 100 twenty two - 27 2 0 <1 2.2 2.5 1.1 3 46 0.21 12.0 0.16 0.25 Comparative example 1 Y 1.0 13 YOF 100 0 - 2200 150 4 4 1.6 1.7 1.1 6 49 0.08 13.9 0.17 0.24 Comparative example 2 Y 3.0 - YF 3 - 100 - 5800 380 4 5 1.7 1.8 1.1 5 45 0.10 12.9 0.14 0.22 Comparative example 3 Y - - Y 2 O 3 - - 100 10 1 4 4 1.4 1.5 1.1 10 48 0.18 11.3 0.16 0.29 Comparative example 4 Y 2.5 3 Y 5 O 4 F 7 100 79 - 4500 280 4 4 0.8 1.5 1.9 2 4 1.37 - 0.01 - Comparative example 5 Y 2.0 6 Y 5 O 4 F 7 100 35 - 3200 200 0 <1 1.6 1.8 1.1 4 46 0.18 12.9 0.10 0.27 Comparative example 6 Y 1.4 10 Y 5 O 4 F 7 100 0 - 1000 74 0 <1 1.5 1.9 1.3 1 48 0.73 15.0 0.03 0.30

對於由上述方法所獲得之各實施例及比較例之燒結體,以與燒結體用材料相同之方法進行XRF及XRD測定,求出組成比及F/RE莫耳比。但是,燒結體不進行粉末化而供XRF及XRD測定使用。又,於燒結體之XRD測定中,未進行550℃之焙燒之預處理。於各實施例及比較例之燒結體之XRD測定中,源自除稀土類元素之氟氧化物及REF 3所表示之稀土類元素之氟化物以外之化合物的結晶相之主峰之峰高相對於源自REaObFc之結晶相之主峰之峰高為1%以下。又,利用不鏽鋼製研缽將燒結體之一部分充分粉碎,藉由與上述燒結體用材料相同之方法,求出Al含量及Si含量。 進而,藉由以下方法,求出相對密度及孔隙率、維氏硬度。 又,藉由以下方法,供浸漬試驗及電漿試驗(蝕刻速率之測定)使用。 將該等結果示於表2。 The sintered bodies of each Example and Comparative Example obtained by the above method were subjected to XRF and XRD measurements in the same manner as for the materials for sintered bodies, and the composition ratio and F/RE molar ratio were determined. However, the sintered body is not pulverized and used for XRF and XRD measurements. In addition, in the XRD measurement of the sintered body, the pretreatment of baking at 550°C was not performed. In the XRD measurement of the sintered bodies of each Example and Comparative Example, the peak height of the main peak derived from the crystal phase of compounds other than oxyfluorides of rare earth elements and fluorides of rare earth elements represented by REF 3 was relative to The peak height of the main peak derived from the crystalline phase of REaObFc is 1% or less. In addition, a part of the sintered body was thoroughly pulverized in a stainless steel mortar, and the Al content and Si content were determined by the same method as the above-mentioned sintered body material. Furthermore, the relative density, porosity, and Vickers hardness were determined by the following method. In addition, the following methods are used for immersion testing and plasma testing (measurement of etching rate). The results are shown in Table 2.

<相對密度(%)及孔隙率> 將燒結體放入至蒸餾水中,藉由膜片型真空泵於減壓下保持1小時後,測定水中重量W 2[g]。又,利用濕布去除多餘水分,測定飽和重量W 3[g]。其後,將燒結體放入至乾燥器中使其充分乾燥後,測定乾燥重量W 1[g]。藉由下式,算出鬆密度ρ b[g/cm 3]及開口孔隙率OP。 ρ b=W 1/(W 3-W 2)×ρ 1(g/cm 3) OP=(W 3-W 1)/(W 3-W 2)×100(質量%) 此處,ρ 1[g/cm 3]為蒸餾水之密度。使用所獲得之鬆密度ρ b及理論密度ρ c[g/cm 3],藉由下式算出相對密度(RD)[%]。 RD=ρ bc×100(%) 再者,表2中,相對密度為「ND」表示作為XRD之粉末分析資料庫之ICDD(International Centre for Diffraction Data,國際繞射資料中心)中不存在卡資訊,理論密度不明確,故而相對密度無法計算。 <Relative Density (%) and Porosity> The sintered body was placed in distilled water and kept under reduced pressure with a diaphragm vacuum pump for 1 hour, and then the weight W 2 [g] in the water was measured. Furthermore, excess water was removed with a damp cloth, and the saturated weight W 3 [g] was measured. Thereafter, the sintered body was placed in a desiccator and dried sufficiently, and then the dry weight W 1 [g] was measured. The bulk density ρ b [g/cm 3 ] and the open porosity OP are calculated from the following formula. ρ b =W 1 /(W 3 -W 2 )×ρ 1 (g/cm 3 ) OP=(W 3 -W 1 )/(W 3 -W 2 )×100 (mass %) Here, ρ 1 [g/cm 3 ] is the density of distilled water. Using the obtained bulk density ρ b and theoretical density ρ c [g/cm 3 ], the relative density (RD) [%] was calculated by the following formula. RD=ρ bc ×100 (%) In addition, in Table 2, the relative density "ND" means that there is no density in the ICDD (International Center for Diffraction Data, International Center for Diffraction Data) which is the XRD powder analysis database. There is card information and the theoretical density is unclear, so the relative density cannot be calculated.

<維氏硬度> 對燒結體進行粗研磨後使用平均粒徑0.05 μm之金剛石漿料進行研磨。使用該試樣,基於JIS R1610,測定維氏硬度。測定使用維氏硬度計MVK-G1(明石製作所)。關於維氏硬度試驗之條件,於負載100 gf(0.980665 N)下,採用可獲得沿JIS R1610之4.6.11之規定之壓痕的負載,保持15秒,測定10個點,求出平均值。藉由光學顯微鏡觀察壓痕,測定壓痕大小。維氏硬度HV藉由下式算出。 HV=(0.1891F)/d 2此處,F為試驗負載[N],d為壓痕之對角線長度之平均值[mm]。 <Vickers Hardness> After rough grinding the sintered body, use a diamond slurry with an average particle size of 0.05 μm to grind it. Using this sample, the Vickers hardness was measured based on JIS R1610. Vickers hardness tester MVK-G1 (Akashi Seisakusho Co., Ltd.) was used for measurement. Regarding the conditions of the Vickers hardness test, use a load that can obtain an indentation along the provisions of 4.6.11 of JIS R1610 under a load of 100 gf (0.980665 N), hold for 15 seconds, measure 10 points, and calculate the average value. Observe the indentation through an optical microscope and measure the indentation size. Vickers hardness HV is calculated by the following formula. HV=(0.1891F)/d 2 Here, F is the test load [N], and d is the average value of the diagonal length of the indentation [mm].

<浸漬試驗> 於ϕ20 mm×2 mmt之單面鏡面研磨狀態(Ra為10 nm以下)下對燒結體進行加工後,裝入至裝有50 mL之50質量%HF、35質量%HCl各者之水溶液之聚丙烯製容器中,在該溶液中於常溫下浸漬1週,測定重量減少率及研磨面之表面粗糙度,進行評價。下述評價基準(i)及(ii)之兩者均滿足者設為○(耐受性較佳),滿足下述評價基準(i)或(ii)中之任一基準者設為△(耐受性普通),下述評價基準(i)及(ii)之兩者均不滿足者設為×(耐受性較差)。 再者,評價基準設為:(i)重量減少率為0.5%以下、(ii)研摩面之表面粗糙度之增加為20nm以下。 又,Ra(算術平均粗糙度)之測定使用觸針式表面粗糙度測定器(JIS B0651:2001)來進行。 <Immersion test> After processing the sintered body in a single-sided mirror-polished state of φ20 mm A container made of propylene was immersed in this solution at normal temperature for 1 week, and the weight reduction rate and the surface roughness of the polished surface were measured and evaluated. Those that satisfy both the following evaluation criteria (i) and (ii) are rated as ○ (better tolerance), and those that satisfy either of the following evaluation criteria (i) or (ii) are rated as △( Average tolerance), and those that do not satisfy both the following evaluation criteria (i) and (ii) are rated as × (poor tolerance). In addition, the evaluation criteria are: (i) the weight reduction rate is 0.5% or less, (ii) the increase in surface roughness of the polished surface is 20 nm or less. In addition, Ra (arithmetic mean roughness) was measured using a stylus type surface roughness measuring instrument (JIS B0651: 2001).

<電漿試驗> 於ϕ20 mm×2 mmt之單面鏡面研磨狀態(Ra為10 nm以下)下對燒結體進行加工後,於燒結體之一半貼附Kapton膠帶,於燒結體鏡面部朝上之狀態下載置於蝕刻裝置(SAMCO公司製造之RIE-10NR)之腔室,進行電漿蝕刻。電漿蝕刻條件如下所示。 關於蝕刻速率之測定,藉由上述表面粗糙度測定測量電漿暴露面與電漿照射後剝離了膠帶之非暴露面之階差。測定點為燒結體每1面3個點,求出3個點之平均值。 ・氛圍氣體:CF 4/O 2/Ar=40/20/40(cc/min) ・高頻功率:RF(Radio Frequency)為300 W ・壓力:5 Pa ・蝕刻時間:15小時 <Plasma test> After processing the sintered body in a single-sided mirror-polished state of ϕ20 mm × 2 mmt (Ra is 10 nm or less), attach Kapton tape to half of the sintered body, with the mirror surface facing up. The status download was placed in the chamber of an etching device (RIE-10NR manufactured by SAMCO), and plasma etching was performed. Plasma etching conditions are as follows. Regarding the measurement of the etching rate, the step difference between the plasma-exposed surface and the non-exposed surface from which the tape was peeled off after plasma irradiation was measured by the above-mentioned surface roughness measurement. The measurement points are three points on each side of the sintered body, and the average value of the three points is calculated.・Ambient gas: CF 4 /O 2 /Ar=40/20/40 (cc/min) ・High frequency power: RF (Radio Frequency) is 300 W ・Pressure: 5 Pa ・Etching time: 15 hours

[表2]    稀土類元素(RE) 燒結法 燒結體物性 耐受性評價 燒結體之F/RE莫耳比 X射線繞射峰強度 Si含量[質量ppm] Al含量[質量ppm] 相對密度[%] 孔隙率[質量%] 維氏硬度[GPa] 浸漬試驗 電漿試驗 RE-O-F種類 RE-O-F REF 3 RE 2O 3 HF耐受性 HCl耐受性 蝕刻速率[nm/h] 實施例1 Y SPS 1.4 Y 5O 4F 7 100 0 - 13 2 100 0.0 3 3.0 實施例2 Y SPS 1.7 Y 5O 4F 7 100 10 - 13 1 99 0.0 5 2.7 實施例3 Y SPS 2.0 Y 5O 4F 7 100 21 - 12 2 100 0.0 6 2.6 實施例4 Y SPS 2.3 Y 5O 4F 7 100 44 - 19 2 100 0.0 5 2.8 實施例5 Y SPS 2.7 Y 5O 4F 7 100 79 - 100 4 99 0.0 5 2.9 實施例6 Y SPS 1.4 Y 5O 4F 7 100 0 - 100 7 99 0.0 3 3.1 實施例7 Y 常壓 1.4 Y 5O 4F 7 100 0 - 200 18 97 0.1 3 3.4 實施例8 Y 常壓 1.5 Y 5O 4F 7 100 4 - 10 3 99 0.0 4 3.2 實施例9 Y HP 2.0 Y 5O 4F 7 100 19 - 13 3 100 0.0 5 2.8 實施例10 La SPS 2.4 La 10O 7F 16 100 48 - 200 5 98 0.0 4 3.4 實施例11 Gd SPS 1.5 Gd 4O 3F 6 100 1 - 25 2 100 0.0 5 2.8 實施例12 Gd SPS 2.2 Gd 4O 3F 6 100 18 - 200 8 99 0.0 6 3.3 實施例13 Er SPS 1.9 Er 5O 4F 7 100 11 - 42 5 100 0.0 6 3.0 實施例14 Yb SPS 1.4 Yb 5O 4F 7 100 0 - 21 1 (ND) 0.0 3 3.3 實施例15 Yb SPS 2.7 Yb 5O 4F 7 100 96 - 400 10 (ND) 0.3 4 3.8 實施例16 Lu SPS 1.7 Lu 7O 6F 9 100 7 - 16 1 99 0.1 7 2.5 比較例1 Y 常壓 1.0 YOF 100 0 - 1500 120 99 0.1 3 4.0 比較例2 Y 常壓 3.0 YF 3 - 100 - 3300 290 89 3.8 3 6.0 比較例3 Y 常壓 - Y 2O 3 - - 100 10 1 100 0.0 6 × 3.5 比較例4 Y SPS 2.5 Y 5O 4F 7 100 60 - 3600 250 86 5.1 1 5.4 比較例5 Y SPS 2.0 Y 5O 4F 7 100 22 - 2500 140 94 1.1 2 4.8 比較例6 Y SPS 1.4 Y 5O 4F 7 100 0 - 700 61 93 1.5 2 4.9 [Table 2] Rare earth elements (RE) sintering method Sintered body physical properties Tolerance evaluation F/RE molar ratio of sintered body X-ray diffraction peak intensity Si content [mass ppm] Al content [mass ppm] Relative density[%] Porosity [mass %] Vickers hardness [GPa] Dip test Plasma test RE-OF type RE-OF REF 3 RE 2 O 3 HF tolerance HCl tolerance Etching rate [nm/h] Example 1 Y SPS 1.4 Y 5 O 4 F 7 100 0 - 13 2 100 0.0 3 3.0 Example 2 Y SPS 1.7 Y 5 O 4 F 7 100 10 - 13 1 99 0.0 5 2.7 Example 3 Y SPS 2.0 Y 5 O 4 F 7 100 twenty one - 12 2 100 0.0 6 2.6 Example 4 Y SPS 2.3 Y 5 O 4 F 7 100 44 - 19 2 100 0.0 5 2.8 Example 5 Y SPS 2.7 Y 5 O 4 F 7 100 79 - 100 4 99 0.0 5 2.9 Example 6 Y SPS 1.4 Y 5 O 4 F 7 100 0 - 100 7 99 0.0 3 3.1 Example 7 Y normal pressure 1.4 Y 5 O 4 F 7 100 0 - 200 18 97 0.1 3 3.4 Example 8 Y normal pressure 1.5 Y 5 O 4 F 7 100 4 - 10 3 99 0.0 4 3.2 Example 9 Y HP 2.0 Y 5 O 4 F 7 100 19 - 13 3 100 0.0 5 2.8 Example 10 La SPS 2.4 La 10 O 7 F 16 100 48 - 200 5 98 0.0 4 3.4 Example 11 Gd SPS 1.5 Gd 4 O 3 F 6 100 1 - 25 2 100 0.0 5 2.8 Example 12 Gd SPS 2.2 Gd 4 O 3 F 6 100 18 - 200 8 99 0.0 6 3.3 Example 13 Er SPS 1.9 Er 5 O 4 F 7 100 11 - 42 5 100 0.0 6 3.0 Example 14 yb SPS 1.4 Yb 5 O 4 F 7 100 0 - twenty one 1 (ND) 0.0 3 3.3 Example 15 yb SPS 2.7 Yb 5 O 4 F 7 100 96 - 400 10 (ND) 0.3 4 3.8 Example 16 Lu SPS 1.7 Lu 7 O 6 F 9 100 7 - 16 1 99 0.1 7 2.5 Comparative example 1 Y normal pressure 1.0 YOF 100 0 - 1500 120 99 0.1 3 4.0 Comparative example 2 Y normal pressure 3.0 YF 3 - 100 - 3300 290 89 3.8 3 6.0 Comparative example 3 Y normal pressure - Y 2 O 3 - - 100 10 1 100 0.0 6 × 3.5 Comparative example 4 Y SPS 2.5 Y 5 O 4 F 7 100 60 - 3600 250 86 5.1 1 5.4 Comparative example 5 Y SPS 2.0 Y 5 O 4 F 7 100 twenty two - 2500 140 94 1.1 2 4.8 Comparative example 6 Y SPS 1.4 Y 5 O 4 F 7 100 0 - 700 61 93 1.5 2 4.9

如上述表2所示,根據各實施例之燒結體用材料,所獲得之包含REaObFc之燒結體緻密且硬度較高,浸漬試驗、電漿試驗均可獲得對藥液浸漬或電漿蝕刻優異之耐受性評價。 另一方面,於專利文獻3之等效品即利用Al、Si量較多之包含YOF之比較例1之燒結體用材料所得之燒結體中,對藥液浸漬或電漿蝕刻之耐受性與各實施例相比較低。 又,如比較例2所示利用包含YF 3且Al、Si量較多之燒結體用材料所得之燒結體之緻密度較差,蝕刻速率較高,如比較例3所示包含Y 2O 3之燒結體用材料雖然Al、Si量較少,但其燒結體對鹽酸之耐受性亦較差。 進而,於如比較例4~6所示包含REaObFc,且F/RE與本發明相同之情形時,若Al、Si量較多,則與各實施例相比,可知硬度、緻密度較差,對藥液浸漬或電漿蝕刻之耐受性較差。 [產業上之可利用性] As shown in the above Table 2, according to the materials for sintered bodies of each embodiment, the obtained sintered bodies containing REaObFc are dense and have high hardness. Both the immersion test and the plasma test can obtain excellent results for chemical liquid immersion or plasma etching. Tolerance evaluation. On the other hand, in the equivalent product of Patent Document 3, that is, the sintered body obtained by using the sintered body material of Comparative Example 1 containing YOF in a large amount of Al and Si, the resistance to chemical liquid immersion or plasma etching It is lower compared with each embodiment. In addition, as shown in Comparative Example 2, the sintered body obtained by using a sintered body material containing YF 3 and a large amount of Al and Si has poor density and a high etching rate. As shown in Comparative Example 3, the sintered body containing Y 2 O 3 Although the materials used for sintered bodies have small amounts of Al and Si, their sintered bodies also have poor resistance to hydrochloric acid. Furthermore, as shown in Comparative Examples 4 to 6, when REaObFc is included and F/RE is the same as that of the present invention, if the amounts of Al and Si are large, it can be seen that the hardness and density are inferior to those of the respective examples. The tolerance to liquid dipping or plasma etching is poor. [Industrial availability]

藉由本發明之燒結體用材料及使用其之燒結體之製造方法,所獲得之燒結體具有優異之耐化學品性及耐電漿性。 又,本發明之燒結體具有優異之耐化學品性及耐電漿性。 By the material for sintered bodies of the present invention and the method of manufacturing a sintered body using the same, the sintered body obtained has excellent chemical resistance and plasma resistance. In addition, the sintered body of the present invention has excellent chemical resistance and plasma resistance.

圖1係實施例3之燒結體用材料之XRD圖。 圖2係表示實施例3之燒結體用材料之細孔徑分佈之圖。 Figure 1 is an XRD pattern of the material for sintered bodies of Example 3. Fig. 2 is a diagram showing the pore size distribution of the material for sintered bodies of Example 3.

Claims (15)

一種燒結體用材料,其含有REaObFc(其中,RE為稀土類元素,b/a為0.9以下,c/a為1.1以上)所表示之稀土類元素之氟氧化物, 材料整體中之氟元素(F)之莫耳數相對於稀土類元素(RE)之莫耳數之比(F/RE莫耳比)為1.3以上2.8以下,且 鋁(Al)之含量為50質量ppm以下。 A material for sintered bodies containing an oxyfluoride of a rare earth element represented by REaObFc (where RE is a rare earth element, b/a is 0.9 or less, and c/a is 1.1 or more), The ratio of the molar number of fluorine element (F) to the molar number of rare earth elements (RE) (F/RE molar ratio) in the entire material is 1.3 or more and 2.8 or less, and The content of aluminum (Al) is 50 ppm by mass or less. 如請求項1之燒結體用材料,其中矽(Si)之含量為500質量ppm以下。For example, the material for sintered bodies according to claim 1, wherein the content of silicon (Si) is 500 ppm by mass or less. 如請求項1或2之燒結體用材料,其於使用壓汞法所測得之細孔徑分佈中, 在細孔徑0.05 μm以上0.5 μm以下之範圍及細孔徑5 μm以上50 μm以下之範圍內分別具有波峰, 細孔徑0.05 μm以上0.5 μm以下之細孔容積為0.1 mL/g以上,且細孔徑5 μm以上50 μm以下之細孔容積為0.1 mL/g以上。 For example, in claim 1 or 2, the material for sintered bodies has a pore size distribution measured using the mercury porosimetry method. There are peaks in the range of pore diameters from 0.05 μm to 0.5 μm and from 5 μm to 50 μm. The volume of pores with a pore diameter of 0.05 μm or more and 0.5 μm or less is 0.1 mL/g or more, and the pore diameter of 5 μm or more and 50 μm or less is 0.1 mL/g or more. 如請求項1或2之燒結體用材料,其中於XRD分析中,除稀土類元素之氟氧化物以外所包含之結晶相實質上僅由REF 3所表示之稀土類元素之氟化物構成。 For example, the material for a sintered body according to claim 1 or 2, wherein in XRD analysis, the crystalline phase other than the oxyfluoride of the rare earth element is substantially composed only of the fluoride of the rare earth element represented by REF 3 . 如請求項3之燒結體用材料,其中於XRD分析中,除稀土類元素之氟氧化物以外所包含之結晶相實質上僅由REF 3所表示之稀土類元素之氟化物構成。 For example, claim 3 is a material for a sintered body, wherein in the XRD analysis, the crystalline phase other than the oxyfluoride of the rare earth element is substantially composed only of the fluoride of the rare earth element represented by REF 3 . 如請求項1或2之燒結體用材料,其中REaObFc為選自RE 7O 6F 9、RE 6O 5F 8、RE 5O 4F 7、RE 4O 3F 6、RE 3O 2F 5及RE 2OF 4中之至少一種。 Such as the material for sintered bodies of claim 1 or 2, wherein REaObFc is selected from RE 7 O 6 F 9 , RE 6 O 5 F 8 , RE 5 O 4 F 7 , RE 4 O 3 F 6 , RE 3 O 2 F At least one of 5 and RE 2 OF 4 . 如請求項1或2之燒結體用材料,其中稀土類元素之氟氧化物之稀土類元素RE為選自Sc、Y、La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb及Lu中之一種或兩種以上。Such as the material for sintered bodies of claim 1 or 2, wherein the rare earth element RE of the rare earth element oxyfluoride is selected from Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, One or more of Ho, Er, Tm, Yb and Lu. 如請求項1或2之燒結體用材料,其灼燒減量為10質量%以下。For materials used for sintered bodies in claim 1 or 2, the loss on ignition is 10 mass% or less. 如請求項1或2之燒結體用材料,其BET比表面積為2 m 2/g以上10 m 2/g以下。 For example, the material for sintered bodies in claim 1 or 2 has a BET specific surface area of 2 m 2 /g or more and 10 m 2 /g or less. 如請求項1或2之燒結體用材料,其豪斯納比(振實密度/鬆密度)為1.0以上1.3以下。For example, the material for sintered bodies in claim 1 or 2 has a Hausner ratio (tap density/bulk density) of 1.0 or more and 1.3 or less. 一種燒結體,其含有REaObFc(其中,RE為稀土類元素,b/a為0.9以下,c/a為1.1以上)所表示之稀土類元素之氟氧化物, 燒結體整體中之氟元素(F)之莫耳數相對於稀土類元素(RE)之莫耳數之比(F/RE莫耳比)為1.3以上2.8以下,且 鋁(Al)之含量為50質量ppm以下。 A sintered body containing an oxyfluoride of a rare earth element represented by REaObFc (where RE is a rare earth element, b/a is 0.9 or less, and c/a is 1.1 or more), The ratio of the molar number of fluorine element (F) to the molar number of rare earth elements (RE) (F/RE molar ratio) in the entire sintered body is 1.3 or more and 2.8 or less, and The content of aluminum (Al) is 50 ppm by mass or less. 如請求項11之燒結體,其中矽(Si)之含量為500質量ppm以下。The sintered body of Claim 11, wherein the content of silicon (Si) is 500 ppm by mass or less. 如請求項11或12之燒結體,其中除稀土類元素之氟氧化物以外所包含之結晶相實質上僅由REF 3所表示之稀土類元素之氟化物構成。 For example, the sintered body of Claim 11 or 12, wherein the crystalline phase other than the oxyfluoride of the rare earth element is substantially composed only of the fluoride of the rare earth element represented by REF 3 . 如請求項11或12之燒結體,其維氏硬度為3 GPa以上。For example, the sintered body of claim 11 or 12 has a Vickers hardness of 3 GPa or more. 如請求項13之燒結體,其維氏硬度為3 GPa以上。For example, the sintered body of claim 13 has a Vickers hardness of 3 GPa or more.
TW111129367A 2022-02-24 2022-08-04 Material for sintered body, and sintered body TW202334061A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-027237 2022-02-24
JP2022027237 2022-02-24

Publications (1)

Publication Number Publication Date
TW202334061A true TW202334061A (en) 2023-09-01

Family

ID=87765314

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111129367A TW202334061A (en) 2022-02-24 2022-08-04 Material for sintered body, and sintered body

Country Status (2)

Country Link
TW (1) TW202334061A (en)
WO (1) WO2023162290A1 (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002255647A (en) * 2001-02-27 2002-09-11 Nihon Ceratec Co Ltd Yttrium oxide sintered body and wafer holding tool
US7932202B2 (en) * 2003-07-29 2011-04-26 Kyocera Corporation Y2O3 sintered body and corrosion resistant member for semiconductor/liquid crystal producing apparatus
JP5911036B1 (en) * 2014-11-21 2016-04-27 日本イットリウム株式会社 Sintered body
JP6124100B2 (en) * 2015-03-05 2017-05-10 日本イットリウム株式会社 Sintering material and powder for producing the sintering material
JP2020165771A (en) * 2019-03-29 2020-10-08 京セラ株式会社 Method for measuring particles, nozzle, and method for manufacturing the nozzle

Also Published As

Publication number Publication date
WO2023162290A1 (en) 2023-08-31

Similar Documents

Publication Publication Date Title
JP6124100B2 (en) Sintering material and powder for producing the sintering material
JP6510824B2 (en) Thermal spray powder and thermal spray material
JP6848904B2 (en) Manufacturing method of transparent ceramics, transparent ceramics and magneto-optical devices
TWI779224B (en) Powder for film formation or sintering
JP2010500957A (en) Zirconium oxide and method for producing the same
JP5495165B1 (en) Thermal spray material
US20230242409A1 (en) Ceramic sintered body comprising magnesium aluminate spinel
JP7283026B1 (en) Materials for sintered bodies and sintered bodies
JP2006152408A (en) Powder for thermal spraying, thermal spraying method, and thermal-sprayed film
JP6388153B2 (en) Thermal spray material
JPH0665706A (en) Ziconia powder for thermal spraying
TWI820786B (en) Yttria-zirconia sintered ceramics for plasma resistant materials and method of making the same
TW202334061A (en) Material for sintered body, and sintered body
TWI385138B (en) Ceramic components and corrosion resistance components
JP7380966B2 (en) cold spray material
KR20230147153A (en) Dense green tape, its manufacturing method and uses
JP6659073B1 (en) Powder for film formation or sintering
WO2020179296A1 (en) Sintered body
JP6793217B2 (en) Plasma sprayed film
JP7351071B2 (en) sintered body
KR102510280B1 (en) High Purity and High Density Yttrium Aluminum Garnet Sintered Body And Manufacturing Method Thereof
US20220285164A1 (en) Plasma Etching Apparatus Component for Manufacturing Semiconductor Comprising Composite Sintered Body and Manufacturing Method Therefor
TW202404925A (en) Process for sintering large diameter yag layers substantially free of unreacted yttrium oxide and yttrium rich phases
KR20210082085A (en) Corrosion resistant material for semiconductor manufacturing apparatus
JP2010083751A (en) Conductive ceramic material and manufacturing method thereof