TW202333195A - Plasma treatment device - Google Patents

Abstract

Provided is a plasma treatment device capable of appropriately controlling the movements of charged particles. A plasma treatment device (1) is provided with a treatment chamber (2). The plasma treatment device is provided with, within the treatment chamber (2), a stage (3) on which a substrate to be treated (H1) as an object to be treated is installed, an antenna (4) for generating inductively coupled plasma within the treatment chamber (2), and an internal electrode (8) to which a predetermined potential is applied.

Description

Plasma treatment device

The present disclosure relates to a plasma processing device.

There is known a plasma processing apparatus that generates inductively coupled plasma in a vacuum vessel using an antenna arranged in the vacuum vessel. Depending on the type, the plasma processing apparatus performs predetermined plasma processing using generated plasma, such as film formation by chemical vapor deposition or sputtering, or etching, on an object to be processed such as a substrate to be processed. (etching) and other processing. [Prior art documents] [Patent Document]

[Patent Document 1] Japanese Patent Application Laid-Open No. 8-8232

[Problem to be solved by the invention]

In a plasma processing apparatus, it is important to appropriately control the behavior of charged particles contained in plasma generated during plasma processing in a vacuum container (processing chamber). This is because, in the plasma processing apparatus, the action of the charged particles on the object to be processed affects the quality of the plasma processing.

However, in the conventional plasma processing apparatus, there is no disclosure of appropriately controlling the behavior of charged particles.

The present disclosure has been made in view of the above-mentioned problems, and an object thereof is to provide a plasma processing apparatus capable of appropriately controlling the behavior of charged particles. [Means to solve the problem]

In order to solve the above problems, a plasma processing apparatus according to one aspect of the present disclosure includes a processing chamber, and the plasma processing apparatus includes inside the processing chamber: a stage for placing an object to be processed; and an antenna. Plasma for generating inductive coupling within the processing chamber; and internal electrodes for applying a prescribed potential. [Effects of the invention]

According to one aspect of the present disclosure, it is possible to provide a plasma processing apparatus capable of appropriately controlling the movement of charged particles.

[Embodiment 1] Hereinafter, Embodiment 1 of the present disclosure will be described in detail using FIGS. 1 to 2 . FIG. 1 is a diagram illustrating the structure of a plasma processing apparatus 1 according to Embodiment 1 of the present disclosure. FIG. 2 is a diagram explaining a specific structural example of the internal electrode 8 shown in FIG. 1 .

In addition, in the following description, as the plasma treatment, a plasma apparatus that forms a film on the substrate H1 by a plasma chemical vapor deposition (Chemical Vapor Deposition, CVD) method using inductively coupled plasma is exemplified. Explain. However, the plasma processing apparatus 1 of the present disclosure can also be applied to a plasma processing apparatus that performs a plasma process such as a sputtering process to form a predetermined object on the substrate H1 as the object to be processed. Furthermore, the plasma processing apparatus 1 of the present disclosure can also be applied to a plasma processing apparatus that performs an etching process or an ashing process for removing a predetermined substance from the substrate H1 to be processed.

＜Plasma treatment device 1＞ As shown in FIG. 1 , the plasma processing apparatus 1 according to Embodiment 1 includes a stage 3 as a stage on which a substrate H1 to be processed is placed. The plasma processing apparatus 1 includes a processing chamber 2 , and in the processing chamber 2 , a predetermined plasma processing is performed on the substrate H1 placed on the stage 3 . The plasma processing apparatus 1 includes a load rock (not shown) for loading and unloading the substrate H1 to be processed between the plasma processing apparatus 1 and the outside.

Furthermore, the plasma processing apparatus 1 includes a control unit (not shown) that controls each component of the plasma processing apparatus 1 . The control unit includes, for example, a central processing unit (CPU), a random access memory (Random Access Memory, RAM), a read only memory (Read Only Memory, ROM), etc., and performs various structural components based on information processing. control function block.

The substrate H1 to be processed is placed on the stage 3 of the processing chamber 2 from the load lock vacuum chamber by a transport mechanism (not shown). Furthermore, the substrate H1 to be processed is transported from the stage 3 of the processing chamber 2 to the inside of the load lock vacuum chamber by the transport mechanism. The substrate H1 to be processed may be, for example, a glass substrate or a synthetic resin substrate used in a liquid crystal panel display, an organic electroluminescence (EL) panel display, or the like. Furthermore, the substrate H1 to be processed may be a semiconductor substrate used for various purposes. The plasma processing apparatus 1 forms a predetermined film such as a barrier (moisture-proof) film on the substrate H1 through the predetermined plasma treatment.

＜Processing Room 2＞ The processing chamber 2 is configured using a grounded vacuum vessel. While the inside of the vacuum vessel is maintained at a predetermined degree of vacuum, a predetermined plasma is regularly applied to the substrate H1 under the control of the control unit. handle. In addition, in the plasma processing apparatus 1 of this Embodiment 1, the stage 3 is also grounded. In addition to this description, as shown in Embodiment 2 below, in order to be able to perform plasma processing more appropriately, it is preferable to also control the potential of the stage 3 .

Furthermore, the processing chamber 2 includes a temperature sensor (not shown) that detects the temperature of the stage 3, and the detection result of the temperature sensor is output to the control unit. Furthermore, the control unit controls the stage 3 to a predetermined set temperature during the plasma processing by performing feedback control on the temperature of the stage 3 using the input detection result of the temperature sensor. .

Furthermore, the processing chamber 2 is provided with a processing gas supply unit that introduces the processing gas containing the film-forming gas corresponding to the predetermined plasma processing into the inside of the processing chamber 2 (not shown), The plasma treatment is performed in an environment of process gas. The processing gas is, for example, argon, hydrogen, nitrogen, silane, or oxygen.

＜Antenna 4＞ An antenna 4 for generating inductively coupled plasma inside the processing chamber 2 is provided above the stage 3 inside the processing chamber 2 . That is, the plasma processing apparatus 1 of the present disclosure flows a high-frequency current through the antenna 4 to generate a high-frequency induced electric field near the antenna 4 to generate inductively coupled plasma. The antenna 4 is provided linearly on the substrate H1 to be processed, for example. Both ends of the antenna 4 are airtightly extended to the outside of the processing chamber 2 . Furthermore, an impedance adjustment part 5 and an impedance adjustment part 7 are respectively connected to one end and the other end of the antenna 4 .

The impedance adjustment part 5 includes a matching circuit, and one end of the antenna 4 is connected to the power source 6 via the impedance adjustment part 5 . Furthermore, the impedance adjustment unit 7 includes a variable capacitor (variable condenser). The other end of the antenna 4 is grounded via the impedance adjustment part 7 .

The power supply 6 supplies, for example, 13.56 MHz high-frequency power to one end of the antenna 4 via the impedance adjustment unit 5 . Control is performed in such a manner that the control unit changes the capacitance of the variable capacitor of the impedance adjustment unit 7 to efficiently supply high-frequency power to the antenna 4 inside the processing chamber 2 .

<Internal electrode 8> Inside the processing chamber 2 , the internal electrode 8 is provided on the opposite side of the substrate H1 (stage 3 ) to be processed with respect to the antenna 4 . The internal electrode 8 is installed inside the processing chamber 2 via an isolated spacer 9 on the back side of the antenna 4 . That is, the antenna 4 is arranged between the internal electrode 8 and the stage 3 inside the processing chamber 2 .

The internal electrode 8 is formed using a carbon plate or a metal plate, for example. The internal electrode 8 is a control electrode that controls the charged particles contained in the plasma inside the processing chamber 2 . That is, the electrode potential control unit 10 is connected to the internal electrode 8. The electrode potential control unit 10 includes a power supply (not shown) connected to the internal electrode 8, and controls the power supply in the following manner: A predetermined potential is applied to the internal electrode 8 . The electrode potential control unit 10 controls the potential of the internal electrode 8 to a predetermined potential by variably adjusting the voltage applied to the internal electrode 8 from the electrode power supply in accordance with instructions from the control unit.

In addition, when the internal electrode 8 is formed of a carbon plate, although the density of the carbon plate is lower than that of the metal plate, it has high strength and is less likely to cause strain or the like in the internal electrode 8 . Therefore, even when the internal electrode 8 is enlarged, in-plane non-uniformity of the plasma caused by strain or the like can be less likely to occur.

Furthermore, it is preferable to use a metal material with low density and high electrical conductivity for the metal plate. Specifically, it is preferable to use aluminum or aluminum alloy. Furthermore, when the internal electrode 8 is formed using a metal plate of such a metal material, the internal electrode 8 can be formed to be excellent in mechanical impact compared to the internal electrode 8 using a carbon plate, and the impact resistance of the plasma processing device 1 can be improved. sex. As a result, for example, when vibration or the like caused by opening and closing a valve (not shown) is transmitted to the plasma processing apparatus 1 , it is preferable to use the metal plate to form the internal electrode 8 .

As shown in FIG. 2 , the internal electrode 8 includes, for example, a punching metal-shaped grid electrode having a plurality of openings 8 a each formed in a circular shape. In the internal electrode 8, kinetic energy is selectively imparted to the charged particles according to the polarity of the charged particles, or the amount of the charged particles reaching the substrate H1 to be processed is reduced (details will be described later).

In addition to the above description, for example, a mesh-shaped gate electrode may be used for the internal electrode 8 .

Furthermore, in addition to the above description, a flat internal electrode 8 without openings 8 a may be used.

＜Operation example＞ The operation of the plasma processing apparatus 1 according to Embodiment 1 will be specifically described using FIG. 3 as well. FIG. 3 is a diagram explaining the function of the internal electrode 8 . In addition, in the following description, the operation|movement of the internal electrode 8 is mainly demonstrated. In addition, in FIG. 3 , the substrate H1 to be processed, the antenna 4 , the power source 6 connected thereto, and the like are omitted.

As shown in FIG. 3 , when the antenna 4 ( FIG. 1 ) operates to generate plasma inside the processing chamber 2 , the charged particles k contained in the plasma are different from the neutral particles n. Move by applying voltage. That is, inside the processing chamber 2 , as shown in FIG. 3 , the stage 3 is grounded, so the charged particles k including positive ions p and electrons or negative ions e move in response to the voltage applied to the internal electrode 8 . That is, the charged particles k selectively impart kinetic energy from the internal electrode 8 according to their polarity, or reduce the amount of the charged particles k reaching the substrate H1 to be processed.

Specifically, as shown by arrow E in FIG. 3 , the electrode potential control unit 10 applies a positive voltage to the internal electrode 8 so that the potential of the internal electrode 8 becomes higher than the plasma potential. In this case, as shown in FIG. 3 , the kinetic energy of the positive ions p in the direction toward the substrate H1 becomes larger. As a result, the reaction of the positive ions p on the surface of the substrate H1 can be promoted, and a high-quality film can be formed on the surface.

On the other hand, as shown in FIG. 3 , the kinetic energy of electrons or negative ions e in the direction toward the internal electrode 8 becomes large. Thereby, the amount of electrons or negative ions e reaching the substrate H1 to be processed can be reduced. As a result, when electrons or negative ions e degrade the film quality of the film formed on the surface of the substrate H1 by plasma treatment, the deterioration of the film quality can be suppressed.

The plasma processing apparatus 1 of this Embodiment 1 configured as mentioned above includes the processing chamber 2 . The plasma processing apparatus 1 according to Embodiment 1 includes, inside a processing chamber 2 , a stage 3 on which a substrate to be processed H1 (object to be processed) is placed, and an antenna 4 for generating inductive coupling inside the processing chamber 2 . Plasma. Furthermore, the plasma processing apparatus 1 according to the first embodiment includes the internal electrode 8 to which a predetermined potential is applied inside the processing chamber 2 . Therefore, in the plasma processing apparatus 1 of the first embodiment, unlike the conventional example, by applying a predetermined potential to the internal electrode 8 , the internal electrode 8 can appropriately control the plasma inside the processing chamber 2 The action of the charged particle k contained in .

That is, in the plasma processing apparatus 1 of this Embodiment 1, since the antenna 4 is included in the inside of the processing chamber 2, plasma can be generated efficiently. Furthermore, in the plasma processing apparatus 1 according to Embodiment 1, the internal electrode 8 is included in the processing chamber 2 . Therefore, the movement or arrival amount of the charged particles of the plasma with respect to the stage 3 can be directly controlled. Furthermore, in the plasma processing apparatus 1 of the first embodiment, by applying a predetermined potential to the internal electrode 8 , the potential gradient between the internal electrode 8 and the substrate H1 to be processed can be formed to be large.

As a result, in the plasma processing apparatus 1 of the first embodiment, as illustrated in FIG. 3 , kinetic energy can be selectively imparted to the charged particles k according to the polarity of the charged particles k contained in the plasma. Therefore, in the plasma processing apparatus 1 according to the first embodiment, the amount of arrival of the charged particles k to the substrate H1 to be processed can be increased or decreased. Therefore, in this Embodiment 1, unlike the conventional example, the movement of the charged particles k can be appropriately controlled, and a plasma processing apparatus 1 capable of performing high-quality plasma processing can be constructed.

Furthermore, in the plasma processing apparatus 1 according to the first embodiment, the antenna 4 is a linear antenna and can be arranged between the internal electrode 8 and the stage 3 . Thereby, in the plasma processing apparatus 1 of the first embodiment, the positive ions p and electrons or negative ions e of the charged particles k of the plasma generated by the antenna 4 can be directed to the substrate H1 to be processed, respectively, depending on the processing content. side or the internal electrode 8 side moves appropriately. As a result, in the plasma processing apparatus 1 of the first embodiment, the amount of positive ions p, electrons or negative ions e of the charged particles k reaching the substrate H1 can be easily increased or decreased. Therefore, in the plasma processing apparatus 1 of the first embodiment, high-precision plasma processing of the substrate H1 to be processed can be easily performed.

Furthermore, in the plasma processing apparatus 1 of the first embodiment, the internal electrode 8 serving as a shield is not provided between the antenna 4 and the substrate H1 to be processed on the stage 3 . Therefore, in the plasma processing apparatus 1 according to the first embodiment, the amount of ions, radicals, etc. used in plasma processing that reaches the substrate H1 to be processed can be increased. Therefore, in the plasma processing apparatus 1 of the first embodiment, the film formation rate or the etching rate can be increased, the tact time can be shortened, and cost reduction can be easily achieved.

Furthermore, in the plasma processing apparatus 1 according to the first embodiment, the internal electrode 8 is arranged on the back side of the antenna 4 when viewed from the stage 3 . Thereby, in the plasma processing apparatus 1 of the first embodiment, not only the plasma generated between the antenna 4 and the stage 3 but also the plasma generated on the internal electrode 8 side of the antenna 4 are treated. A wide range of plasma can exert an electric field applied between the internal electrode 8 and the stage 3 . Therefore, in the plasma processing apparatus 1 of the first embodiment, the movement of the charged particles of the plasma relative to the stage 3 can be efficiently controlled. As a result, in the plasma processing apparatus 1 of the first embodiment, it is possible to easily perform high-precision plasma processing on the substrate H1 to be processed.

Furthermore, in the plasma processing apparatus 1 of the first embodiment, a linear antenna 4 is used as the antenna 4 . By arranging a plurality of linear antennas 4 in an array, in the plasma processing apparatus 1 according to the first embodiment, the plurality of antennas 4 can be arranged inside the processing chamber 2 so as to correspond to the large substrate H1 to be processed. .

Furthermore, in the plasma processing apparatus 1 of the first embodiment, as the plasma processing, the chemical vapor deposition method using plasma is performed on the substrate H1 to be processed. Thereby, in the plasma processing apparatus 1 of Embodiment 1, high-quality film formation can be performed on the substrate H1 to be processed.

[Embodiment 2] Embodiment 2 of the present disclosure will be specifically described using FIG. 4 . FIG. 4 is a diagram illustrating the structure of a plasma processing apparatus according to Embodiment 2 of the present disclosure. In addition, for the sake of convenience of description, members having the same functions as those described in Embodiment 1 are assigned the same reference numerals, and description thereof will not be repeated.

The main difference between Embodiment 2 and Embodiment 1 is that a plurality of internal electrodes 8 whose potentials can be controlled independently of each other are provided inside the processing chamber 2 . Furthermore, the main difference between the second embodiment and the first embodiment is that the potential of the stage 3 is variably controlled.

In the plasma processing apparatus 1 according to the second embodiment, as shown in FIG. 4 , a plurality of, for example, two internal electrodes 8 and 18 are provided inside the processing chamber 2 . The internal electrode 18 is provided on the side of the substrate H1 (stage 3 ) to be processed with respect to the antenna 4 so that the antenna 4 is disposed between the internal electrode 8 and the internal electrode 18 . Furthermore, the internal electrode 18 is installed inside the processing chamber 2 via an insulating spacer 19 . Like the internal electrode 8 , the internal electrode 18 is configured in a punched metal shape, for example, as shown in FIG. 2 , and includes a carbon plate or a metal plate (not shown) having a plurality of openings.

The internal electrode 18 is connected to an electrode potential control unit 20 , which includes an electrode power supply (not shown) connected to the internal electrode 18 , and controls the internal electrode 18 by controlling the electrode power supply. Potential. The electrode potential control unit 20 controls the potential of the internal electrode 18 to a predetermined potential by variably adjusting the voltage applied to the internal electrode 18 from the electrode power supply in accordance with instructions from the control unit. Furthermore, the electrode potential control unit 20 and the electrode potential control unit 10 control each other independently, and can control the internal electrode 8 and the internal electrode 18 to have different potentials respectively.

Furthermore, the plasma processing apparatus 1 according to the second embodiment can variably control the potential of the stage 3 . Specifically, the stage potential control unit 30 is provided on the stage 3 and includes a power supply (not shown) connected to the stage 3. By controlling the power supply, the potential of the stage 3 is controlled.

The stage potential control unit 30 controls the electrode potential control unit 10 and the electrode potential control unit 20 independently of each other. Furthermore, the stage potential control unit 30, the electrode potential control unit 10, and the electrode potential control unit 20 are configured to control the potentials of the stage 3, the internal electrode 8, and the internal electrode 18 to predetermined potentials, respectively, so as to be more appropriate. to control the movement of the charged particles.

Specifically, when the potentials of the internal electrode 8, the internal electrode 18, and the stage 3 are set to the first potential, the second potential, and the third potential, respectively, in the plasma processing apparatus 1 of the second embodiment , for example, it is assumed to be first potential>second potential>third potential. Thereby, in the plasma processing apparatus 1 of this Embodiment 2, the positive ion p and the electron or negative ion e shown in FIG. 3 can be controlled more effectively.

That is, since the potential (third potential) of the stage 3 is the lowest, the positive ions p are attracted to the potential of the stage 3 and their kinetic energy in the direction toward the substrate H1 to be processed becomes larger. As a result, the reaction of the positive ions p on the surface of the substrate H1 can be further promoted, and a higher quality film can be formed on the surface.

On the other hand, the potential (first potential) of the internal electrode 8 is the highest, so electrons or negative ions e are attracted to the potential of the internal electrode 8 , and their movement energy in the direction toward the internal electrode 8 becomes larger. Thereby, the amount of electrons or negative ions e reaching the substrate H1 to be processed can be further reduced. As a result, when electrons or negative ions e degrade the film quality of the film formed on the surface of the substrate H1 by plasma treatment, the degradation of the film quality can be further suppressed.

With the above configuration, the plasma processing device 1 of the second embodiment exhibits the same effects as the plasma processing device 1 of the first embodiment.

Furthermore, the plasma processing apparatus 1 according to the second embodiment further includes a stage potential control unit 30 that controls the potential of the stage 3 . Thereby, in the plasma processing apparatus 1 of the second embodiment, the movement of the charged particles k can be more appropriately controlled by controlling the potential of the stage 3 with the stage potential control unit 30 .

Furthermore, in the plasma processing apparatus 1 according to the second embodiment, the internal electrode 18 includes the opening 18 a. Therefore, the charged particles k generated inside the processing chamber 2 or the charged particles k generated inside the processing chamber 2 can be introduced into the processing chamber 2 through the opening 18 a. Process gases or film-forming precursors pass smoothly. As a result, in the plasma processing apparatus 1 of the first embodiment, even when the internal electrode 18 is provided between the antenna 4 and the stage 3 , it is possible to suppress a decrease in the processing efficiency during plasma processing. In addition, the film-forming precursor refers to ions or radicals obtained by ionizing and/or exciting molecules and/or atoms generated by the processing gas introduced into the interior of the processing chamber 2 or the decomposition of the processing gas.

Furthermore, in the plasma processing apparatus 1 according to the second embodiment, a plurality of internal electrodes 8 and 18 are provided inside the processing chamber 2 . Moreover, the electrode potential control part 10 and the electrode potential control part 20 are respectively connected to the plurality of internal electrodes 8 and 18, and the electrode potential control part 10 and the electrode potential control part 20 can control the internal electrode 8 and the internal electrode independently of each other. 18 potential. Thereby, in the plasma processing apparatus 1 of the second embodiment, the electrode potential control unit 10 and the electrode potential control unit 20 control the potentials of the internal electrode 8 and the internal electrode 18 respectively, so that appropriate charged particles k can be reliably controlled. action. That is, in the plasma processing apparatus 1 of the second embodiment, compared with the plasma processing apparatus 1 of the first embodiment, the potential gradient inside the processing chamber 2 can be set more appropriately, and the charged particles k can be controlled at a higher level. action.

In addition, in addition to the above description, for example, the arrangement of the internal electrode 8 may be omitted. Furthermore, a structure in which a plurality of internal electrodes capable of controlling potentials independently of each other is provided between the antenna 4 and the stage 3 may be used.

[Summary] In order to solve the above problems, a plasma processing apparatus according to one aspect of the present disclosure includes a processing chamber, and the plasma processing apparatus includes inside the processing chamber: a stage for placing an object to be processed; and an antenna for To generate inductively coupled plasma inside the processing chamber, and to apply a predetermined potential to the internal electrodes.

With the above structure, the plasma processing apparatus includes an antenna for generating inductively coupled plasma inside the processing chamber, and therefore can generate plasma with high efficiency. Furthermore, the plasma processing apparatus includes an internal electrode that applies a predetermined potential inside the processing chamber. Therefore, it is possible to directly control the movement or arrival amount of the charged particles of the plasma with respect to the stage, thereby providing high-quality plasma processing. Plasma treatment device for treatment.

In the plasma processing apparatus of the above aspect, the antenna may be disposed between the internal electrode and the stage.

With the above structure, the internal electrode is arranged on the back side of the antenna when viewed from the mounting platform. Therefore, for the plasma around the antenna, that is, a wide range of plasma including not only the plasma generated between the antenna and the stage, but also the plasma generated on the opposite side of the antenna when viewed from the stage , the electric field imparted between the internal electrode and the stage can be exerted. Therefore, the movement or arrival amount of the plasma charged particles on the stage can be efficiently controlled. As a result, high-precision plasma processing of the object to be processed can be easily performed.

In the plasma processing apparatus of the above aspect, the antenna may be a linear antenna.

With this structure, the antenna can be disposed inside the processing chamber in a manner corresponding to a large-sized object to be processed.

The plasma processing apparatus of the above aspect may further include a stage potential control unit that controls the potential of the stage.

With this structure, the charged particles can be controlled more appropriately.

In the plasma processing apparatus of the aspect, a plurality of the internal electrodes may be provided, and may further include a plurality of electrode potential control parts, and the plurality of electrode potential control parts may be respectively connected to the plurality of internal electrodes. electrode, the plurality of electrode potential control units can control the potentials of the plurality of internal electrodes independently of each other.

This structure enables more advanced and appropriate control of charged particles.

In the plasma processing apparatus of the above aspect, the internal electrode may include a carbon plate or a metal plate having a plurality of openings.

With this structure, the charged particles generated inside the processing chamber, the processing gas introduced into the inside of the processing chamber, etc. can be smoothly passed through the opening, even when the internal electrode is provided between the antenna and the stage. Even in the case of time, it is possible to suppress the decrease in processing efficiency in plasma processing.

In the plasma processing apparatus of the above aspect, a chemical vapor deposition method using the plasma may be used to form a film on the object to be processed provided on the stage.

This structure enables high-quality film formation on the object to be processed.

This disclosure is not limited to each of the embodiments described. Various changes can be made within the scope of the patent application. Embodiments obtained by appropriately combining the technical means disclosed in different embodiments are also included in this disclosure. technical scope.

1: Plasma treatment device 2: Processing room 3: Carrier stage 4:Antenna 5, 7: Impedance adjustment part 6:Power supply 8, 18: Internal electrode 8a: Open your mouth 9. 19: Insulation spacer 10, 20: Electrode potential control part 30: Carrier potential control department e: Electrons or negative ions H1: Substrate to be processed (object to be processed) k: charged particle n: neutral particle p: positive ion

FIG. 1 is a diagram illustrating the structure of a plasma processing apparatus according to Embodiment 1 of the present disclosure. FIG. 2 is a diagram explaining a specific structural example of the internal electrode shown in FIG. 1 . FIG. 3 is a diagram explaining the function of the internal electrode. FIG. 4 is a diagram illustrating the structure of a plasma processing apparatus according to Embodiment 2 of the present disclosure.

1: Plasma treatment device

2: Processing room

3: Carrier stage

4:Antenna

5, 7: Impedance adjustment part

6:Power supply

8: Internal electrode

9: Insulation spacer

10: Electrode potential control part

H1: substrate to be processed (object to be processed)

Claims (7)

A plasma treatment device, including a treatment chamber, and in the plasma treatment device, The interior of the treatment chamber includes: Carrier platform for setting the objects to be processed; an antenna for generating inductively coupled plasma within the chamber; and Internal electrodes apply a prescribed potential. The plasma processing device according to claim 1, wherein The antenna is arranged between the internal electrode and the carrier. The plasma processing device according to claim 1 or claim 2, wherein The antenna is a linear antenna. The plasma processing device according to any one of claims 1 to 3, further comprising a stage potential control unit, The stage potential control unit controls the potential of the stage. The plasma processing device according to any one of claims 1 to 4, wherein A plurality of said internal electrodes are provided, It further includes a plurality of electrode potential control parts, the plurality of electrode potential control parts are respectively connected to the plurality of internal electrodes, The plurality of electrode potential control units can control the potentials of the plurality of internal electrodes independently of each other. The plasma processing device according to any one of claims 1 to 5, wherein The internal electrode includes a carbon or metal plate with a plurality of openings. The plasma processing device according to any one of claims 1 to 6, wherein A film is formed on the object to be processed placed on the stage by a chemical vapor deposition method using the plasma.