TW202331977A - 具有頂部接觸部的金屬－絕緣體－金屬電容器 - Google Patents

具有頂部接觸部的金屬－絕緣體－金屬電容器 Download PDF

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Publication number
TW202331977A
TW202331977A TW111128453A TW111128453A TW202331977A TW 202331977 A TW202331977 A TW 202331977A TW 111128453 A TW111128453 A TW 111128453A TW 111128453 A TW111128453 A TW 111128453A TW 202331977 A TW202331977 A TW 202331977A
Authority
TW
Taiwan
Prior art keywords
plate
mesa
top contact
insulator
disposed
Prior art date
Application number
TW111128453A
Other languages
English (en)
Chinese (zh)
Inventor
約翰 建宏 朱
里辛 傑
吉里達 納拉帕蒂
Original Assignee
美商高通公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商高通公司 filed Critical 美商高通公司
Publication of TW202331977A publication Critical patent/TW202331977A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
TW111128453A 2021-09-09 2022-07-28 具有頂部接觸部的金屬－絕緣體－金屬電容器 TW202331977A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/470,274 2021-09-09
US17/470,274 US11973020B2 (en) 2021-09-09 2021-09-09 Metal-insulator-metal capacitor with top contact

Publications (1)

Publication Number Publication Date
TW202331977A true TW202331977A (zh) 2023-08-01

Family

ID=83283119

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111128453A TW202331977A (zh) 2021-09-09 2022-07-28 具有頂部接觸部的金屬－絕緣體－金屬電容器

Country Status (7)

Country Link
US (1) US11973020B2 (enExample)
EP (1) EP4399742A1 (enExample)
JP (1) JP2024531534A (enExample)
KR (1) KR20240053592A (enExample)
CN (1) CN117897812A (enExample)
TW (1) TW202331977A (enExample)
WO (1) WO2023039319A1 (enExample)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100224960A1 (en) 2009-03-04 2010-09-09 Kevin John Fischer Embedded capacitor device and methods of fabrication
US9397038B1 (en) 2015-02-27 2016-07-19 Invensas Corporation Microelectronic components with features wrapping around protrusions of conductive vias protruding from through-holes passing through substrates
US10043863B2 (en) 2017-01-06 2018-08-07 International Business Machines Corporation Grated MIM capacitor to improve capacitance
US10804411B2 (en) * 2017-11-29 2020-10-13 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and method of forming the same
US10483344B1 (en) * 2018-04-26 2019-11-19 International Business Machines Corporation Fabrication of a MIM capacitor structure with via etch control with integrated maskless etch tuning layers
US11222946B2 (en) 2018-11-30 2022-01-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device including a high density MIM capacitor and method
US11362064B2 (en) * 2019-09-28 2022-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package with shared barrier layer in redistribution and via
US11424319B2 (en) * 2020-05-29 2022-08-23 Taiwan Semiconductor Manufacturing Co., Ltd. Multilayer capacitor electrode
US11527459B2 (en) * 2021-04-28 2022-12-13 Micron Technology, Inc. Substrates for semiconductor packages, including hybrid substrates for decoupling capacitors, and associated devices, systems, and methods

Also Published As

Publication number Publication date
JP2024531534A (ja) 2024-08-29
US20230072667A1 (en) 2023-03-09
US11973020B2 (en) 2024-04-30
CN117897812A (zh) 2024-04-16
KR20240053592A (ko) 2024-04-24
WO2023039319A1 (en) 2023-03-16
EP4399742A1 (en) 2024-07-17

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