KR20240053592A - 최상부 접점을 갖는 금속-절연체-금속 커패시터 - Google Patents

최상부 접점을 갖는 금속-절연체-금속 커패시터 Download PDF

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Publication number
KR20240053592A
KR20240053592A KR1020247007095A KR20247007095A KR20240053592A KR 20240053592 A KR20240053592 A KR 20240053592A KR 1020247007095 A KR1020247007095 A KR 1020247007095A KR 20247007095 A KR20247007095 A KR 20247007095A KR 20240053592 A KR20240053592 A KR 20240053592A
Authority
KR
South Korea
Prior art keywords
plate
mesa
top contact
insulator
mim capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247007095A
Other languages
English (en)
Korean (ko)
Inventor
존 지안홍 주
리신 게
기리다르 날라파티
Original Assignee
퀄컴 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 퀄컴 인코포레이티드 filed Critical 퀄컴 인코포레이티드
Publication of KR20240053592A publication Critical patent/KR20240053592A/ko
Pending legal-status Critical Current

Links

Classifications

    • H01L23/5223—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H01L21/76838—
    • H01L23/5226—
    • H01L28/60—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
KR1020247007095A 2021-09-09 2022-07-29 최상부 접점을 갖는 금속-절연체-금속 커패시터 Pending KR20240053592A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/470,274 2021-09-09
US17/470,274 US11973020B2 (en) 2021-09-09 2021-09-09 Metal-insulator-metal capacitor with top contact
PCT/US2022/074289 WO2023039319A1 (en) 2021-09-09 2022-07-29 Metal-insulator-metal capacitor with top contact

Publications (1)

Publication Number Publication Date
KR20240053592A true KR20240053592A (ko) 2024-04-24

Family

ID=83283119

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247007095A Pending KR20240053592A (ko) 2021-09-09 2022-07-29 최상부 접점을 갖는 금속-절연체-금속 커패시터

Country Status (7)

Country Link
US (1) US11973020B2 (enExample)
EP (1) EP4399742A1 (enExample)
JP (1) JP2024531534A (enExample)
KR (1) KR20240053592A (enExample)
CN (1) CN117897812A (enExample)
TW (1) TW202331977A (enExample)
WO (1) WO2023039319A1 (enExample)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100224960A1 (en) 2009-03-04 2010-09-09 Kevin John Fischer Embedded capacitor device and methods of fabrication
US9397038B1 (en) 2015-02-27 2016-07-19 Invensas Corporation Microelectronic components with features wrapping around protrusions of conductive vias protruding from through-holes passing through substrates
US10043863B2 (en) 2017-01-06 2018-08-07 International Business Machines Corporation Grated MIM capacitor to improve capacitance
US10804411B2 (en) * 2017-11-29 2020-10-13 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and method of forming the same
US10483344B1 (en) * 2018-04-26 2019-11-19 International Business Machines Corporation Fabrication of a MIM capacitor structure with via etch control with integrated maskless etch tuning layers
US11222946B2 (en) 2018-11-30 2022-01-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device including a high density MIM capacitor and method
US11362064B2 (en) * 2019-09-28 2022-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package with shared barrier layer in redistribution and via
US11424319B2 (en) * 2020-05-29 2022-08-23 Taiwan Semiconductor Manufacturing Co., Ltd. Multilayer capacitor electrode
US11527459B2 (en) * 2021-04-28 2022-12-13 Micron Technology, Inc. Substrates for semiconductor packages, including hybrid substrates for decoupling capacitors, and associated devices, systems, and methods

Also Published As

Publication number Publication date
JP2024531534A (ja) 2024-08-29
US20230072667A1 (en) 2023-03-09
US11973020B2 (en) 2024-04-30
CN117897812A (zh) 2024-04-16
WO2023039319A1 (en) 2023-03-16
EP4399742A1 (en) 2024-07-17
TW202331977A (zh) 2023-08-01

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Legal Events

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PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

D11 Substantive examination requested

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D11-EXM-PA0201 (AS PROVIDED BY THE NATIONAL OFFICE)

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000