TW202330724A - Photosensitive resin composition, method for manufacturing electronic device, electronic device and optical device - Google Patents

Abstract

The present invention provides: a photosensitive resin composition which contains (A) a polyimide resin, (B) a multifunctional (meth)acrylate compound, (C) a sensitizing agent and (D) a polymerization inhibitor, wherein the polyimide resin (A) comprises a structure that is represented by general formula (a) (in general formula (a), X represents a divalent organic group, and Y represents a tetravalent organic group); an electronic device which is provided with an insulating layer that is formed of this photosensitive resin composition; and a light device which is provided with an insulating layer that is formed of this photosensitive resin composition.

Description

Photosensitive resin composition, manufacturing method of electronic device, electronic device and optical device

The invention relates to a photosensitive resin composition, a manufacturing method of an electronic device, an electronic device and an optical device.

In the electric/electronic field, in order to form a cured film such as an insulating layer, a photosensitive resin composition containing a polyamide resin and/or a polyimide resin may be used. Therefore, studies have been made on photosensitive resin compositions containing polyamide resins and/or polyimide resins.

As an example, Patent Document 1 describes a photosensitive composition containing at least one fully imidized polyimide polymer having a weight average molecular weight; at least one solubility switching compound; at least one photoinitiator; and at least one solvent capable of forming a dissolving compound exhibiting greater than about 0.15 μm/sec in the case of cyclopentanone as the developer. Velocity Membrane.

Patent Documents 2 and 3 also describe a photosensitive resin composition containing a polyamide resin and/or a polyimide resin. [Prior Art Literature] [Patent Document]

[Patent Document 1] International Publication No. 2016/172092 [Patent Document 2] International Publication No. 2007/047384 [Patent Document 3] Japanese Patent Laid-Open No. 2018-070829

[Problem to be Solved by the Invention]

When forming a cured film in an electronic device using a photosensitive resin composition, curing treatment by heat is generally performed. Specifically, first, a photosensitive resin composition is applied on a substrate to form a film, and the film is patterned by exposure or development. Thereafter, a cured film is formed by heat-treating the patterned film. As a result of research conducted by the present inventors, there is still room for further improvement in the elongation of the cured film and the focus margin in the exposure step/development step as described above.

The present invention has been accomplished in view of such circumstances. One of the objects of the present invention is to provide a photosensitive resin composition having appropriate elongation and a large focus margin. [Technical means to solve the problem]

The inventors of the present invention have accomplished the inventions provided below, thereby solving the above-mentioned problems.

According to the present invention, a photosensitive resin composition is provided, which contains: polyimide resin (A); multifunctional (meth)acrylate compound (B); photosensitizer (C); and polymerization inhibitor (D) , the polyimide resin (A) contains a structure represented by the following general formula (a), In the general formula (a), X is a divalent organic group, and Y is a tetravalent organic group.

Furthermore, according to the present invention, a method of manufacturing an electronic device is provided, which includes: a film forming step of forming a photosensitive resin film on a substrate using the above photosensitive resin composition; an exposing step of exposing the photosensitive resin film; and A developing step, developing the exposed photosensitive resin film.

Moreover, according to this invention, the electronic device provided with the cured film of the said photosensitive resin composition is provided.

Also, according to the present invention, an optical device is provided, which has: light emitting element; wiring electrically connected to the light emitting element; and insulating film that covers the wiring, and This insulating film is a cured film of the above-mentioned photosensitive resin composition. [Effect of Invention]

According to the present invention, there is provided a photosensitive resin composition having appropriate elongation and a large focus margin.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In all the drawings, the same symbols are assigned to the same components, and explanations thereof are appropriately omitted. In order to avoid complications, (i) when there are multiple identical constituent elements in the same drawing, sometimes only one of them is marked with a symbol and not all constituent elements are marked with a symbol, or (ii) especially after Fig. 2 In the figure of , symbols that are the same as those in FIG. 1 may not be relabeled. All drawings are for illustrative purposes only. The shapes, dimensional ratios, and the like of each member in the drawings do not necessarily correspond to actual items.

In this specification, unless otherwise specified, the term "approximately" means a range that includes consideration of manufacturing tolerances, assembly deviations, and the like. In this specification, unless otherwise specified, the expression "X to Y" in the description of the numerical range means X or more and Y or less. For example, "1 to 5% by mass" means "1 to 5% by mass".

In the expression of a group (atomic group) in the present specification, the expression not describing substitution or unsubstituted includes both those having no substituent and those having a substituent. For example, "alkyl" includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group). The expression "(meth)acrylic acid" in this specification shows the concept including both acrylic acid and methacrylic acid. The same applies to similar expressions such as "(meth)acrylate". Unless otherwise specified, the term "organic group" in this specification means an atomic group obtained by removing one or more hydrogen atoms from an organic compound. For example, "monovalent organic group" means an atomic group obtained by removing one hydrogen atom from an arbitrary organic compound. The term "electronic device" in this specification includes semiconductor chips, semiconductor elements, printed wiring boards, circuit display devices, information communication terminals, light-emitting diodes, physical batteries, chemical batteries and other components, devices, The meaning of the final product, etc. to use.

＜Photosensitive resin composition＞ The photosensitive resin composition of this embodiment contains: a polyimide resin (A); a polyfunctional (meth)acrylate compound (B); a photosensitizer (C); and a polymerization inhibitor (D). In this embodiment, the polyimide resin (A) is a ring-closed polyimide resin containing a ring-closed imide structure represented by the following general formula (a).

In the general formula (a), X is a divalent organic group, and Y is a tetravalent organic group.

Most conventional polyamide/polyimide-based photosensitive resin compositions contain polyamide before use (before forming a cured film), but do not contain polyimide. That is, conventionally, a film is often formed on a substrate using a photosensitive resin composition containing polyamide, and the film is typically heated to close the rings of polyamide to form polyimide. However, in this case, the film shrinks due to the ring-closing reaction or dehydration accompanying the ring-closing reaction, and it may be difficult to obtain a cured film with good flatness.

On the other hand, the photosensitive resin composition of this embodiment contains a polyimide resin (A) before use (before forming a cured film). Moreover, in this embodiment, the polymerization reaction of a polyfunctional (meth)acrylate compound (B) is used as a hardening mechanism (this polymerization reaction does not involve dehydration in principle). From these circumstances, by forming a cured film using the photosensitive resin composition of this embodiment, shrinkage|shrinkage by heating is small and the cured film with favorable flatness can be formed. In particular, even on a substrate having a level difference, a cured film having good flatness can be formed.

Moreover, by using the photosensitive resin composition of this embodiment, it becomes easy to form the cured film favorable in heat resistance and mechanical characteristics (for example, tensile elongation). Hardened films in electronic devices generally require high heat resistance or good mechanical properties. However, conventionally, if the resin is designed to be rigid to improve heat resistance, the resin may lose its flexibility, resulting in a decrease in mechanical properties such as elongation. Although the details are unclear, it is considered that in the photosensitive resin composition of this embodiment, the polyfunctional (meth)acrylate compound (B) is complicatedly entangled with the polyimide resin (A) during curing (polymerization). As a result, a cured film different from conventional cured films is formed. This "entanglement structure of polyimide resin and polyfunctional (meth)acrylate" is considered to be related to good heat resistance and good mechanical properties.

In the case of using the polyfunctional (meth)acrylate compound (B), the elongation of the obtained photosensitive resin composition becomes good as described above, but on the other hand, swelling of the hardened part, Poor dissolution due to uneven dissolution of the unexposed area (bridge), and phenomenon in which the unexposed area remains incompletely dissolved (foot). Due to the occurrence of such defects, there is a possibility that a sufficient focus margin cannot be obtained. Here, as a result of studies conducted by the present inventors, it was found that good elongation and good focus margin can be achieved by using a photosensitizer (C) and a polymerization inhibitor (D). In the photosensitive resin composition of this embodiment, by using the photosensitive agent (C) to improve the curability of the exposed part, it is possible to suppress the occurrence of bridging in the image development process while maintaining favorable mechanical properties. Moreover, the photosensitive resin composition of this embodiment improves the solubility of an unexposed part by using a polymerization inhibitor (D), and can suppress generation|occurrence|production of footing in a developing process, maintaining favorable mechanical characteristic. By highly suppressing such bridging or footing, the focus margin of the photosensitive resin composition can be greatly increased. In other words, by using the photosensitizer (C) and the polymerization inhibitor (D) together and controlling their ratio to a high degree, both good elongation and good focus can be achieved in the cured film of the photosensitive resin composition of this embodiment. margin.

From the above, the photosensitive resin composition of this embodiment is preferably used to form an insulating layer in an electronic device or an optical device.

Components that may be contained in the photosensitive resin composition of the present embodiment, properties, physical properties, and the like of the photosensitive resin composition of the present embodiment will be continuously described.

(polyimide resin (A)) The photosensitive resin composition of this embodiment contains a polyimide resin (A) containing the structural unit represented by general formula (a).

In the general formula (a), X is a divalent organic group, and Y is a tetravalent organic group.

As described above, the photosensitive resin composition of this embodiment has the advantage of small shrinkage caused by curing (heating) by using a polyimide resin containing a ring-closed imide structure represented by the general formula (a) before curing. tendency.

When the molar number of the amide group contained in the polyimide resin (A) is IM, and the molar number of the amide group contained in the polyimide resin (A) is AM, The imidization rate represented by {IM/(IM+AM)}×100 (%) is preferably at least 90%, more preferably at least 95%, and still more preferably at least 98%. In short, the polyimide resin (A) is preferably a resin having no or a small amount of ring-opening amide structures and a large amount of ring-closing amide structures. By using such a polyimide, shrinkage|contraction by heating can be suppressed further, and the cured film with more favorable flatness can be formed. As an example, the imidization rate can be known from the area of a peak corresponding to an amide group, the area of a peak corresponding to an amide group, or the like in an NMR spectrum. As another example, the imidization rate can be known from the area of the peak corresponding to the amide group or the area of the peak corresponding to the amide group in the infrared absorption spectrum.

The polyimide resin (A) is preferably a polyimide resin containing fluorine atoms. According to the findings of the present inventors, polyimide resins containing fluorine atoms tend to have better solubility in organic solvents than polyimide resins containing no fluorine atoms. Therefore, by using the polyimide resin containing a fluorine atom, it becomes easy to make the property of a photosensitive resin composition into varnish form. The amount (mass ratio) of fluorine atoms in the fluorine atom-containing polyimide resin is, for example, 1 to 30 mass%, preferably 3 to 28 mass%, more preferably 5 to 25 mass%. Sufficient solubility in an organic solvent is easily obtained by containing a certain amount of fluorine atoms in the polyimide resin. On the other hand, from the viewpoint of balance with other performances, the amount of fluorine atoms is preferably not too large.

By performing various designs on the ends of the polyimide resin (A), for example, the mechanical properties (tensile elongation, etc.) of the cured product can be further improved.

As an example, it is preferable that the polyimide resin (A) has a group capable of reacting with an epoxy group at its terminal to form a bond. As such a group, an acid anhydride group, a hydroxyl group, an amino group, a carboxyl group etc. are mentioned.

Preferably, the polyimide resin (A) has an acid anhydride group at its terminal. In the photosensitive resin composition of this embodiment, an acid anhydride group and an epoxy group are sufficiently easy to form a bond. The acid anhydride group is preferably a group of an acid anhydride skeleton having a ring structure. The "ring structure" here is preferably a 5-membered ring or a 6-membered ring, more preferably a 5-membered ring.

Here, in the structural unit represented by the general formula (a) constituting the polyimide resin (A), X is a divalent organic group, and Y is a tetravalent organic group.

The divalent organic group of X and/or the tetravalent organic group of Y preferably have an aromatic ring structure, and more preferably have a benzene ring structure. Thereby, there exists a tendency for heat resistance to further improve. The divalent organic group of X and/or the tetravalent organic group of Y preferably have a structure in which 2 to 6 benzene rings are bonded via a single bond or a divalent linking group. As a divalent linking group here, an alkylene group, a fluorinated alkylene group, an ether group, etc. are mentioned. The alkylene group and the fluorinated alkylene group may be linear or branched. The carbon number of the divalent organic group of X is 6-30, for example. The carbon number of the tetravalent organic group of Y is 6-20, for example. The two imide rings in the general formula (a) are preferably 5-membered rings respectively.

The polyimide resin (A) is preferably a polyimide resin containing fluorine atoms. Thereby, there exists a tendency for the solubility to an organic solvent to improve. Also, from the viewpoint of further improving the solubility in organic solvents, it is preferable that both X and Y are groups containing fluorine atoms.

It is further preferable that the polyimide resin (A) contains a structural unit represented by the following general formula (aa).

In general formula (aa), Y' represents a single bond or an alkylene group, X has the same meaning as X in the general formula (a). The alkylene group of Y' may be linear or branched. Part or all of the hydrogen atoms in the alkylene group of Y' are preferably substituted by fluorine atoms. The carbon number of the alkylene group of Y' is, for example, 1-6, preferably 1-4, more preferably 1-3.

The polyimide resin (A) can typically be obtained in the following manner: (i) first, react (polycondensation) a diamine and an acid dianhydride to synthesize a polyamide, (ii) thereafter, make the polyamide Imidization (carrying out a ring closure reaction), (iii) introducing a desired functional group into a polymer terminal if necessary. For specific reaction conditions, reference can be made to the Examples described later or the description in Patent Document 1 above.

In the finally obtained polyimide resin (A), diamine is incorporated into the polymer as the divalent organic group X in the general formula (a). Moreover, the acid dianhydride is incorporated into the polymer as the tetravalent organic group Y in the general formula (a). In the synthesis of the polyimide resin (A), one or two or more diamines can be used, and one or two or more acid dianhydrides can be used.

Examples of raw material diamines include 3,4'-diaminodiphenyl ether (3,4'-ODA), 4,4'-diamino-2,2'-bis(trifluoromethyl ) biphenyl (TFMB), 3,3',5,5'-tetramethylbenzidine, 2,3,5,6-tetramethyl-1,4-phenylenediamine, 3,3'-diamine 3,3'-dimethylbenzidine, 3,3'-bis(trifluoromethyl)benzidine, 2,2'-bis(p-aminophenyl)hexafluoropropane, bis( Trifluoromethoxy)benzidine (TFMOB), 2,2'-bis(pentafluoroethoxy)benzidine (TFEOB), 2,2'-trifluoromethyl-4,4'-oxydiphenylamine (OBABTF), 2-phenyl-2-trifluoromethyl-bis(p-aminophenyl)methane, 2-phenyl-2-trifluoromethyl-bis(m-aminophenyl)methane, 2, 2'-bis(2-heptafluoroisopropoxy-tetrafluoroethoxy)benzidine (DFPOB), 2,2-bis(m-aminophenyl)hexafluoropropane (6-FmDA), 2,2 -Bis(3-amino-4-methylphenyl)hexafluoropropane, 3,6-bis(trifluoromethyl)-1,4-diaminobenzene (2TFMPDA), 1-(3,5- Diaminophenyl)-2,2-bis(trifluoromethyl)-3,3,4,4,5,5,5-heptafluoropentane, 3,5-diaminotrifluorotoluene (3 ,5-DABTF), 3,5-diamino-5-(pentafluoroethyl)benzene, 3,5-diamino-5-(heptafluoropropyl)benzene, 2,2'-dimethyl Benzidine (DMBZ), 2,2',6,6'-tetramethylbenzidine (TMBZ), 3,6-diamino-9,9-bis(trifluoromethyl)dibenzopyran ( 6FCDAM), 3,6-diamino-9-trifluoromethyl-9-phenyldibenzopyran (3FCDAM), 3,6-diamino-9,9-diphenyldibenzopyran Nam and so on.

Examples of raw acid dianhydrides include pyromeldar acid dianhydride (PMDA), diphenylether-3,3',4,4'-tetracarboxylic dianhydride (ODPA), benzophenone-3 ,3',4,4'-tetracarboxylic dianhydride (BTDA), biphenyl-3,3',4,4'-tetracarboxylic dianhydride (BPDA), diphenylsulfone-3,3', 4,4'-tetracarboxylic dianhydride (DSDA), diphenylmethane-3,3',4,4'-tetracarboxylic dianhydride, 2,2-bis(3,4-phthalic anhydride)propane, 2,2-bis(3,4-phthalic anhydride)-1,1,1,3,3,3-hexafluoropropane (6FDA), etc. Of course, usable acid dianhydrides are not limited thereto. One kind or two or more kinds of acid dianhydrides can be used.

In terms of molar ratio, the usage ratio of diamine and acid dianhydride is basically 1:1. However, in order to obtain a desired terminal structure, one of them may be used too much. Specifically, by using too much diamine, the terminals (both terminals) of the polyimide resin (A) tend to become amine groups. On the other hand, the terminals (both terminals) of the polyimide resin (A) tend to become acid anhydride groups by excessive use of acid dianhydride. As mentioned above, in this embodiment, it is preferable that the polyimide resin (A) has an acid anhydride group at the terminal. Therefore, in this embodiment, when synthesizing a polyimide resin (A), it is preferable to use acid dianhydride too much.

It is also possible to react a certain reagent with the amine group and/or acid anhydride group at the terminal of the polyimide obtained by polycondensation, so that the polyimide terminal has a desired functional group.

The weight average molecular weight of polyimide resin (A) is 5000-100000, for example, Preferably it is 7000-75000, More preferably, it is 10000-50000. When the weight average molecular weight of a polyimide resin (A) is large to some extent, sufficient heat resistance of a cured film can be acquired, for example. Moreover, since the weight average molecular weight of a polyimide resin (A) is not too large, it becomes easy to dissolve a polyimide resin (A) in an organic solvent. The weight average molecular weight can usually be determined by the gel permeation chromatography (GPC) method using polystyrene as a standard substance.

(Polyfunctional (meth)acrylate compound (B)) The photosensitive resin composition of this embodiment contains a polyfunctional (meth)acrylate compound (B). Examples of the polyfunctional (meth)acrylate compound (B) include, without particular limitation, those having two or more (meth)acryloyl groups in one molecule.

From the viewpoint of realizing the above-mentioned "entangled structure of polyimide resin and polyfunctional (meth)acrylate" or the viewpoint of obtaining a hardened and chemically resistant cured film, polyfunctional (meth)acrylate compounds (B) It is preferable that it is trifunctional or more. There is no upper limit to the number of functional groups of the polyfunctional (meth)acrylate compound (B), and the upper limit of the number of functional groups is, for example, 11 functional groups from the viewpoint of availability of raw materials. As a rough tendency, when using the multifunctional (meth)acrylate compound (B) with many functional groups ((meth)acryl groups), the chemical resistance of a cured film tends to improve. On the other hand, in the case of using a polyfunctional (meth)acrylate compound (B) with a small number of functional groups ((meth)acryl groups), mechanical properties such as tensile elongation of the cured film have a change. good tendency.

As an example, it is preferable that a polyfunctional (meth)acrylate compound (B) contains a 3-4 functional (meth)acrylate compound (B1).

As an example, it is preferable that the polyfunctional (meth)acrylate compound (B) contains a pentafunctional or more functional (meth)acrylate compound (B2).

As an example, the polyfunctional (meth)acrylate compound (B) may contain a compound represented by the following general formula (b). In the general formula below, R' is a hydrogen atom or a methyl group, n is 0 to 3, and R is a hydrogen atom or a (meth)acryloyl group.

Specific examples of the polyfunctional (meth)acrylate compound (B) include the following. Of course, the polyfunctional (meth)acrylate compound (B) is not limited to this.

Ethylene Glycol Di(meth)acrylate, Trimethylolpropane Tri(meth)acrylate, Ditrimethylolpropane Tetra(meth)acrylate, Neopentylthritol Tri(meth)acrylate, Polyol polyacrylates such as neopentylthritol tetra(meth)acrylate, diperythritol penta(meth)acrylate, dipenteoerythritol hexa(meth)acrylate, bisphenol A di Di(meth)acrylate of glycidyl ether, epoxy acrylates such as di(meth)acrylate of hexanediol diglycidyl ether, etc., by polyisocyanate and (meth)acrylic hydroxyl Amino ester (meth)acrylate obtained from the reaction of hydroxyl-containing (meth)acrylate such as ethyl ester, etc.

ARONIX M-400, ARONIX M-460, ARONIX M-402, ARONIX M-510, ARONIX M-520 (manufactured by TOAGOSEI CO., LTD.), KAYARAD T-1420, KAYARAD DPHA, KAYARAD DPCA20, KAYARAD DPCA30, KAYARAD DPCA60 , KAYARAD DPCA120 (manufactured by Nippon Kayaku Co., Ltd.), Viscoat #230, Viscoat #300, Viscoat #802, Viscoat #2500, Viscoat #1000, Viscoat #1080 (manufactured by OSAKA ORGANIC CHEMICAL INDUSTRY LTD.), NK ESTETRA A - Commercially available products such as BPE-10, NK ESTETRA A-GLY-9E, NK ESTETRA A-9550, NK ESTETRA A-DPH (manufactured by SHIN-NAKAMURA CHEMICAL CO, LTD.).

The photosensitive resin composition may contain only one kind of polyfunctional (meth)acrylate compound (B), and may contain two or more kinds of polyfunctional (meth)acrylate compounds (B). In the latter case, it is preferable to use polyfunctional (meth)acrylate compounds (B) having different functional groups in combination. It is considered that by using polyfunctional (meth)acrylate compounds (B) with different numbers of functional groups together, a more complex "entangled structure of polyimide and polyfunctional (meth)acrylate" can be formed, thereby obtaining more Good heat resistance or mechanical properties. Incidentally, a mixture of (meth)acrylates having different numbers of functional groups also exists in the commercially available polyfunctional (meth)acrylate compound (B).

The amount of the polyfunctional (meth)acrylate compound (B) is, for example, 25 to 150 parts by mass, preferably 50 to 120 parts by mass, more preferably 70 to 100 parts by mass relative to 100 parts by mass of the polyimide resin (A). The mass part is more preferably 80-95 mass parts. The usage-amount of a polyfunctional (meth)acrylate compound (B) is not specifically limited, However, One or two or more of each performance can be further improved by suitably adjusting the usage-amount as mentioned above. As described above, in the photosensitive resin composition of this embodiment, it is considered that "an entanglement structure of polyimide having a ring structure and polyfunctional (meth)acrylate" can be formed by curing, and it is considered that by By properly adjusting the amount of multifunctional (meth)acrylate compound (B) relative to polyimide resin (A), polyimide resin (A) and multifunctional (meth)acrylate compound (B) ) will be sufficiently entangled, and additional components not related to entanglement will be reduced, and as a result, the performance will be further improved.

(Sensitizer (C)) The photosensitive resin composition of this embodiment contains a photosensitizer (C). The photosensitizer (C) is not particularly limited as long as it can harden the photosensitive resin composition by generating an active species by light.

The photosensitizer (C) preferably contains a photoradical generator. A photoradical generator is effective especially when polymerizing a polyfunctional (meth)acrylate compound (B).

The usable photoradical generator is not particularly limited, and known ones can be used appropriately. Examples include: 2,2-diethoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 1-hydroxycyclohexylphenone, 2-hydroxy-2-methyl -1-phenylpropan-1-one, 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propan-1-one, 2-hydroxy-1- {4-[4-(2-Hydroxy-2-methylpropionyl)benzyl]phenyl}-2-methylpropan-1-one, 2-methyl-1-(4-methylthio Phenyl)-2-𠰌linylpropan-1-one, 2-benzyl-2-dimethylamino-1-(4-𠰌linylphenyl)-butanone-1, 2-(dimethyl Alkyl phenone compounds such as amino)-2-[(4-methylphenyl)methyl]-1-[4-(4-(4-alkylinyl)phenyl]-1-butanone, etc.; two Benzophenone-based compounds such as benzophenone, 4,4'-bis(dimethylamino)benzophenone, 2-carboxybenzophenone, etc.; benzoin methyl ether, benzoin ethyl ether, benzoin iso Benzoin-based compounds such as propyl ether and benzoin isobutyl ether; 9-oxosulfur , 2-Ethyl-9-oxosulfur 𠮿 , 2-isopropyl-9-oxothio𠮿 , 2-Chloro-9-oxosulfur , 2,4-Dimethyl-9-oxosulfur 𠮿 , 2,4-Diethyl-9-oxothio𠮿 9-oxosulfur Department of compounds; 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-symmetrical three Chloromethyl)-symmetrical trimethalone, 2-(4-ethoxynaphthyl)-4,6-bis(trichloromethyl)-symmetrical trimethalone, 2-(4-ethoxycarbonylnaphthyl)- 4,6-bis(trichloromethyl)-symmetrical tristannium and other halomethylated tristannium compounds; 2-trichloromethyl-5-(2'-benzofuranyl)-1,3,4 -oxadiazole, 2-trichloromethyl-5-[β-(2'-benzofuryl)vinyl]-1,3,4-oxadiazole, 4-oxadiazole, 2-trichloro Halomethylated oxadiazole compounds such as methyl-5-furyl-1,3,4-oxadiazole; 2,2'-bis(2-chlorophenyl)-4,4',5, 5'-tetraphenyl-1,2'-biimidazole, 2,2'-bis(2,4-dichlorophenyl)-4,4',5,5'-tetraphenyl-1,2' Biimidazole-based compounds such as -biimidazole, 2,2'-bis(2,4,6-trichlorophenyl)-4,4',5,5'-tetraphenyl-1,2'-biimidazole ; 1,2-octanedione, 1-[4-(phenylthio)phenyl]-2-(o-benzoyl oxime), ethyl ketone, 1-[9-ethyl-6-(2 -methylbenzoyl)-9H-carbazol-3-yl]-,1-(o-acetyl oxime) and other oxime ester compounds; bis(η5-2,4-cyclopentadiene-1 -base)-bis(2,6-difluoro-3-(1H-pyrrol-1-yl)-phenyl)titanium and other cyclopentadienyl titanium compounds; acylphosphine oxide and other Acylphosphine-based compounds; benzoate-based compounds such as p-dimethylaminobenzoic acid and p-diethylaminobenzoic acid; acridine-based compounds such as 9-phenylacridine; etc. Among these, oxime ester-based compounds can be used particularly preferably.

The photosensitive resin composition may contain one kind of photosensitizer (C), or may contain two or more kinds of photosensitizers (C). The content of the photosensitizer (C) is, for example, 5 parts by mass to 30 parts by mass, preferably 10 parts by mass to 25 parts by mass relative to 100 parts by mass of the polyimide resin (A).

(polymerization inhibitor (D)) The photosensitive resin composition of this embodiment contains a polymerization inhibitor (D). In this embodiment, examples of the polymerization inhibitor (D) include hindered phenol compounds, hindered amine compounds, N-oxyl compounds, and thioethers. Department of compounds. Among them, it is preferable to contain one or two or more selected from hindered phenol compounds, hindered amine compounds, and N-oxyl compounds from the viewpoint of improving the solubility of the unexposed portion.

Examples of hindered phenolic compounds include 1,3,5-tris(3,5-di-tertiary-butyl-4-hydroxybenzyl)-1,3,5-tris-2,4,6 (1H, 3H, 5H)-triketone, 4,4',4"-(1-methylpropanyl-3-ylidene) tris(6-tertiary butyl-m-cresol) (4,4', 4"-(1-methylpropanyl-3-ylidene)tris(6-tert-butyl-m-cresol), 6,6'-di-tertiary butyl-4,4'-butylene xylidene, new Pentaerythritol tetrakis[3-(3,5-di-tertiary butyl-4-hydroxyphenyl) propionate] (Irganox1010), 3,9-bis{2-[3-(3-tertiary buty Base-4-hydroxy-5-methylphenyl)propionyloxy]-1,1-dimethylethyl}-2,4,8,10-tetraoxaspiro[5.5]undecane, 1 ,3,5-tris(3,5-di-tertiary butyl-4-hydroxyphenylmethyl)-2,4,6-trimethylbenzene, 2,2'-thiodiethylbis[3-( 3,5-di-tertiary butyl-4-hydroxyphenyl)propionate] (Irganox1035), N,N'-(1,6-hexanediyl)bis[3,5-bis(1,1 -Dimethylethyl)-4-hydroxyphenylacrylamide], bis[3-(3-tertiary butyl-4-hydroxy-5-methylphenyl)propanoic acid][ethylenylbis(oxy ethylene)], 1,6-hexanediol bis[3-(3,5-di-tertiary butyl-4-hydroxyphenyl) propionate], 2,6-di-tertiary butyl-4 -cresol, 2,4-bis[(dodecylthio)methyl]-6-methylphenol (Irganox1726), 2,4-bis(octylthiomethyl)-6-methylphenol (Irganox 1520L), etc. These may be used alone or in combination of two or more.

Examples of hindered amine compounds include tetrakis(1,2,2,6,6-pentamethyl-4-piperidinyl)butan-1,2,3,4-tetracarboxylate, tetrakis(2 ,2,6,6-Tetramethyl-4-piperidinyl)butan-1,2,3,4-tetracarboxylate, 1,2,3,4-butane tetracarboxylic acid and 1,2, 2,6,6-pentamethyl-4-piperidinol and 3,9-bis(2-hydroxy-1,1-dimethylethyl)-2,4,8,10-tetraoxaspiro[ 5.5] Undecane (3,9-bis (2-hydroxy-1,1-dimethylethyl)-2,4,8,10-tetra oxaspiro [5.5] undecane) mixed esters, 1,2,3,4 -butanetetracarboxylic acid with 2,2,6,6-tetramethyl-4-piperidinol and 3,9-bis(2-hydroxy-1,1-dimethylethyl)-2,4, Mixed esters of 8,10-tetraoxaspiro[5.5]undecane, bis(1,2,2,6,6-pentamethyl-4-piperidinyl) sebacate, bis(2, 2,6,6-tetramethyl-4-piperidinyl)sebacate, bis(1-undecyloxy-2,2,6,6-tetramethylpiperidin-4-yl)carbonate ester, 1,2,2,6,6-pentamethyl-4-piperidinyl methacrylate, 2,2,6,6-tetramethyl-4-piperidinyl methacrylate, hexadecyl Reactants such as 2,2,6,6-tetramethylpiperidin-4-yl alkanoate and 2,2,6,6-tetramethylpiperidin-4-yl octadecanoate. These may be used alone or in combination of two or more.

Examples of N-oxyl compounds include 4-benzoyloxy-2,2,6,6-tetramethylpiperidinyloxy (4-benzoyloxy TEMPO), N-nitroso Diphenylamine, N-nitroso-N-phenylhydroxylamine, 2,2,6,6-tetramethylpiperidin-1-oxyl (TEMPO), 4-hydroxy-2,2,6,6-tetra Methylpiperidin-1-oxyl radical (4-hydroxy TEMPO), sebacic acid bis(2,2,6,6-tetramethyl-4-piperidinyl-1-oxyl) (sebacic acid Double TEMPO), etc. These may be used alone or in combination of two or more.

Furthermore, examples of thioether compounds include 2,2-bis{[3-(dodecylthio)-1-oxopropoxy]methyl}propan-1,3-diyl Bis[3-(dodecylthio)propionate], bis(tridecyl)-3,3'-thiodipropionate, etc. These may be used alone or in combination of two or more.

In the photosensitive resin composition of the present embodiment, the content of the polymerization inhibitor (D) is preferably 0.1 to 5 parts by mass, more preferably 1 part by mass, relative to 100 parts by mass of the polyimide resin (A). More than 3 parts by mass and less than 3 parts by mass. When the content of the polymerization inhibitor (D) is within the above range, the solubility of the unexposed part is improved, and it is possible to suppress the phenomenon that the unexposed part is not completely dissolved and remains in the developing step while maintaining good mechanical properties (bottom foot).

In addition, in the photosensitive resin composition of the present embodiment, the content of the polymerization inhibitor (D) is preferably 1 mass part or more and 30 mass parts or less, more preferably 5 mass parts with respect to 100 mass parts of the photosensitizer (C). Part or more and 20 parts by mass or less. When the content of the polymerization inhibitor (D) is within the above-mentioned range with respect to 100 parts by mass of the photosensitive agent (C), good elongation and good focus margin can be achieved in the cured film of the photosensitive resin composition according to this embodiment. Spend.

(Thermal radical generator (E)) It is preferable that the photosensitive resin composition of this embodiment contains a thermal radical generating agent (E). By using the thermal radical generating agent (E), for example, the heat resistance of a cured film and/or the chemical resistance (resistance with respect to an organic solvent etc.) of a cured film can be improved further. This is considered to be because the polymerization reaction of a polyfunctional (meth)acrylate compound (B) can be further accelerated|stimulated by using a thermal radical generating agent (E).

It is preferable that the thermal radical generating agent (E) contains an organic peroxide. Examples of organic peroxides include octyl peroxide, lauryl peroxide, stearyl peroxide, 1,1,3,3-tetramethylbutylperoxy 2-ethylhexanoic acid ester, oxalate peroxide, 2,5-dimethyl-2,5-bis(2-ethylhexylperoxy)hexane, 1-cyclohexyl-1-methylethylperoxy 2-ethyl Ethylhexanoate, tertiary hexylperoxy 2-ethylhexanoate, tertiary butylperoxy 2-ethylhexanoate, m-toluyl peroxide, benzoyl peroxide, formazan Ethyl ethyl ketone peroxide, acetyl peroxide, tertiary butyl hydroperoxide, di-tertiary butyl peroxide, cumene hydroperoxide, dicumyl (dicumyl) Peroxide, tertiary butyl perbenzoate, p-chlorobenzoyl peroxide, cyclohexanone peroxide, etc.

When using a thermal radical generator (E), only 1 type of thermal radical generator (E) may be used, and 2 or more types of thermal radical generators (E) may be used. In the case of using the thermal radical generator (E), the amount is preferably 0.1 part by mass to 30 parts by mass, more preferably 1 part by mass or more to 100 parts by mass of the polyimide resin (A). 20 parts by mass or less.

(Crosslinking agent (F)) It is preferable that the photosensitive resin composition of this embodiment contains a crosslinking agent (F). By using the crosslinking agent (F), for example, reacting the crosslinking agent (F) with other components contained in the photosensitive resin composition or polymerizing the crosslinking agent (F) with each other, or making the crosslinking agent (F) Tightly entangled with the photosensitive resin composition. It is considered that the chemical resistance and elongation of the resin film made of the cured product of the photosensitive resin composition can be improved by this.

The crosslinking agent (F) preferably has one epoxy group-containing group at one end and one (meth)acryl group at the other end in the molecule. By having this structure, unreacted functional groups are reduced, and as a result, the chemical resistance and elongation of the resin film made of the cured product of the photosensitive resin composition are improved.

In this embodiment, the "epoxy group-containing group" refers to a substituent having oxirane (oxirane) which is an ether of a 3-membered ring in the structural formula. As its specific example, in addition to epoxy group, glycidyl group, glycidyl ether group, it can also be enumerated that more than one hydrogen atom in the organic group is replaced by epoxy group, glycidyl group or glycidyl ether group ( The group which removed the hydrogen from the OH group of glycidyl alcohol) is substituted, and a 1, 2- epoxy cyclohexyl group etc. are mentioned specifically,. The organic group is not particularly limited, and examples thereof include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, secondary butyl, tertiary butyl, pentyl, neo Alkyl groups such as pentyl, hexyl, heptyl, octyl, nonyl, decyl, etc.; alkenyl groups such as allyl, pentenyl, vinyl, etc.; alkynyl groups such as ethynyl; methylene, Alkylene groups such as ethylene; Aryl groups such as phenyl, naphthyl, and anthracenyl; Aralkyl groups such as benzyl and phenethyl; Alkaryl groups such as tolyl and xylyl. ); or cycloalkyl groups such as adamantyl, cyclopentyl, cyclohexyl, cyclooctyl, etc.

The crosslinking agent (F) preferably contains a compound represented by the general formula (1).

In the general formula (1), X ₁ represents a (meth)acryloyl group. _X2 represents a glycidyl group, a glycidyl ether group, an epoxy group or a 1,2-epoxycyclohexyl group as an epoxy group-containing group. Moreover, n represents the integer of 1-10.

When _X2 is selected from the above-mentioned functional groups, the reactivity between the crosslinking agent (F) and other components contained in the photosensitive resin composition or the crosslinking agent (F) becomes good, and the photosensitive resin composition The chemical resistance and elongation of the resin film made of the cured product are improved, so it is preferable.

Moreover, since the elongation rate of the resin film which consists of the hardened|cured material of a photosensitive resin composition will become more appropriate when n exists in the range of 1-10, it is preferable.

In the crosslinking agent (F), it is preferable to contain one or two or more compounds selected from any one of the following chemical formulas (2) to (4) as the compound satisfying the above-mentioned general formula (1). By containing one or two or more compounds selected from any one of the following chemical formulas (2) to (4), the chemical resistance and elongation of the resin film composed of the cured product of the photosensitive resin composition can be balanced high balance.

The content of the crosslinking agent (F) is, for example, at least 0.1 part by mass, preferably at least 0.5 part by mass, more preferably at least 1 part by mass, based on 100 parts by mass of the polyimide resin (A). When the content of the crosslinking agent (F) is 0.1 parts by mass or more, the cured product of the photosensitive resin composition can have high chemical resistance. Moreover, content of a crosslinking agent (F) is 30 mass parts or less with respect to 100 mass parts of polyimide resins (A), for example, Preferably it is 20 mass parts or less, More preferably, it is 10 mass parts or less. When the content of the crosslinking agent (F) is 30 parts by mass or less, the ratio of the polyimide resin (A) in the photosensitive resin composition can be maintained and the elongation of the cured product of the photosensitive resin composition becomes In addition to being good, the adhesiveness between the photosensitive resin composition and the substrate can be sufficiently improved.

The photosensitive resin composition of the present embodiment may contain only one kind of crosslinking agent (F), or may contain two or more kinds of crosslinking agents (F).

(Silane coupling agent (G)) It is preferable that the photosensitive resin composition of this embodiment contains a silane coupling agent (G). By using the silane coupling agent (G), for example, the adhesiveness between a board|substrate and a cured film can be improved further.

As the silane coupling agent (G), for example, an amino group-containing silane coupling agent, an epoxy group-containing silane coupling agent, a (meth)acryl group-containing silane coupling agent, a mercapto group-containing silane coupling agent, a vinyl silane coupling agents containing urea groups, silane coupling agents containing thioether groups, silane coupling agents with cyclic anhydride structures, etc.

Examples of amino group-containing silane coupling agents include bis(2-hydroxyethyl)-3-aminopropyltriethoxysilane, γ-aminopropyltriethoxysilane, γ-aminopropyltriethoxysilane, Propyltrimethoxysilane, γ-aminopropylmethyldiethoxysilane, γ-aminopropylmethyldimethoxysilane, N-β(aminoethyl)γ-aminopropyl Trimethoxysilane, N-β(aminoethyl)γ-aminopropyltriethoxysilane, N-β(aminoethyl)γ-aminopropylmethyldimethoxysilane, N -β(aminoethyl)γ-aminopropylmethyldiethoxysilane, N-phenyl-γ-amino-propyltrimethoxysilane, etc. As epoxy group-containing silane coupling agents, for example, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, β-(3, 4-Epoxycyclohexyl)ethyltrimethoxysilane, γ-epoxypropylpropyltrimethoxysilane, etc. Examples of (meth)acrylyl group-containing silane coupling agents include γ-((meth)acryloxypropyl)trimethoxysilane, γ-((meth)acryloxypropyl) ) Methyldimethoxysilane, γ-((meth)acryloxypropyl)methyldiethoxysilane, etc. As a mercapto group-containing silane coupling agent, 3-mercaptopropyltrimethoxysilane etc. are mentioned, for example. Examples of the vinyl group-containing silane coupling agent include vinyltris(β-methoxyethoxy)silane, vinyltriethoxysilane, and vinyltrimethoxysilane. As a ureido group containing silane coupling agent, 3-ureidopropyltriethoxysilane etc. are mentioned, for example. Examples of thioether group-containing silane coupling agents include bis(3-(triethoxysilyl)propyl)disulfide, bis(3-(triethoxysilyl)propyl)tetrasulfide things etc. Examples of silane coupling agents having a cyclic anhydride structure include 3-trimethoxysilylpropyl succinic anhydride, 3-triethoxysilylpropyl succinic anhydride, 3-dimethylmethoxysilyl Propyl succinic anhydride, etc.

In this embodiment, it is particularly preferable to use a silane coupling agent having a cyclic acid anhydride structure. Although the details are unclear, it is presumed that the cyclic acid anhydride structure easily reacts with the main chain, side chain, and/or terminal of the polyimide resin (A), so that a particularly good adhesion-improving effect can be obtained.

In the case of using the silane coupling agent (G), it may be used alone, or two or more types of adhesion aids may be used in combination. In the case of using a silane coupling agent (G), when the amount of the polyimide resin (A) used is 100 parts by mass, the amount used is, for example, 0.1 to 20 parts by mass, preferably 0.3 to 15 parts by mass parts, more preferably 0.4 to 12 parts by mass, further preferably 0.5 to 10 parts by mass.

(hardening catalyst (H)) It is preferable that the photosensitive resin composition of this embodiment contains a hardening catalyst (H). The hardening catalyst (H) has the effect of accelerating the reaction of the crosslinking agent (F). By using a crosslinking agent (F), the reaction which a crosslinking agent (F) participates in can fully progress, and can further improve the tensile elongation of a cured film, for example.

Examples of the curing catalyst (H) include compounds known as curing catalysts for epoxy resins (generally, also referred to as curing accelerators). For example, diacricycloalkene such as 1,8-diacribicyclo[5,4,0]undecene-7 and its derivatives; amine compounds such as tributylamine and benzyldimethylamine ; imidazole compounds such as 2-methylimidazole; organic phosphines such as triphenylphosphine and methyldiphenylphosphine; tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetrabenzoate borate, tetraphenylphosphonium tetranaphthoate borate Four-substituted phosphonium salts such as tetraphenylphosphonium tetranaphthyloxy borate, tetraphenylphosphonium tetranaphthyloxy borate, tetraphenylphosphonium 4,4'-sulfonyl diphenolate, etc.; Triphenylphosphine with benzoquinone added. Among them, organic phosphines are preferably used.

When using the hardening catalyst (H), its amount is, for example, 1 to 80 parts by mass, preferably 2 to 50 parts by mass, more preferably 3 to 30 parts by mass relative to 100 parts by mass of the crosslinking agent (F). .

(Surfactant (I)) It is preferable that the photosensitive resin composition of this embodiment contains a surfactant (I). Thereby, the applicability of a photosensitive resin composition and the flatness of a film can be further improved. Examples of the surfactant (I) include fluorine-based surfactants, silicone-based surfactants, alkyl-based surfactants, acrylic-based surfactants, and the like. From another viewpoint, it is preferable that the surfactant is nonionic. It is preferable to use a nonionic surfactant, for example, from the viewpoint of suppressing an unintended reaction with other components in the composition and improving the storage stability of the composition.

The surfactant (I) preferably contains a surfactant containing at least any one of a fluorine atom and a silicon atom. This contributes not only to obtaining a uniform resin film (improving coatability) or improving developability, but also to improving adhesive strength. As such a surfactant, for example, a nonionic surfactant containing at least any one of a fluorine atom and a silicon atom is preferable. Examples of commercially available products that can be used as the surfactant (I) include F-251, F-253, F-281, F-430, F-477, and F-551 of the "Megafac" series manufactured by DIC Corporation. , F-552, F-553, F-554, F-555, F-556, F-557, F-558, F-559, F-560, F-561, F-562, F-563, F -565, F-568, F-569, F-570, F-572, F-574, F-575, F-576, R-40, R-40-LM, R-41, R-94, etc. Fluorine-containing oligomer structure surfactants, fluorine-containing nonionic surfactants such as Ftergent 250 and Ftergent 251 manufactured by NEOS COMPANY LIMITED, SILFOAM (registered trademark) series manufactured by Wacker Chemie AG (for example, SD 100 TS, SD 670 , SD 850, SD 860, SD 882) and other polysiloxane surfactants. Moreover, FC4430 or FC4432 etc. by 3M company are mentioned as a preferable surfactant.

When the photosensitive resin composition of this embodiment contains a surfactant (I), it may contain 1 type, or 2 or more types of surfactants. When the photosensitive resin composition of the present embodiment contains the surfactant (I), when the content of the polyimide resin (A) is 100 parts by mass, the amount is, for example, 0.001 to 1 part by mass, Preferably it is 0.005-0.5 mass part.

(Solvent (J)/property of composition) It is preferable that the photosensitive resin composition of this embodiment contains a solvent (J). Thereby, a photosensitive resin film can be easily formed on a board|substrate (particularly, a board|substrate with a step) by a coating method. Solvent (J) usually contains an organic solvent. The organic solvent is not particularly limited as long as it can dissolve or disperse the above-mentioned components and does not substantially chemically react with the components.

Examples of organic solvents include acetone, methyl ethyl ketone, toluene, propylene glycol cresyl ethyl ether, propylene glycol dimethyl ether, propylene glycol 1-monomethyl ether 2-acetate, diethylene glycol ethyl methyl ether, Diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, benzyl alcohol, propylene carbonate, ethylene glycol diacetate, propylene glycol diacetate, propylene glycol mono Methyl ether acetate, dipropylene glycol methyl n-propyl ether, butyl acetate, γ-butyrolactone, methyl lactate, ethyl lactate, butyl lactate, etc. These may be used alone or in combination of plural kinds.

When the photosensitive resin composition of this embodiment contains a solvent (J), the photosensitive resin composition of this embodiment is normally a varnish shape. More specifically, the photosensitive resin composition of this embodiment is preferably in the form of a varnish in which at least the polyimide resin (A) and the polyfunctional (meth)acrylate compound (B) are dissolved in the solvent (J). Composition. Since the photosensitive resin composition of the present embodiment is in the form of a varnish, a uniform film can be formed by coating. Moreover, a homogeneous cured film can be obtained by "dissolving" a polyimide resin (A) and a polyfunctional (meth)acrylate compound (B) in a solvent (J).

When using the solvent (J), it is used so that the concentration of the total solid content (non-volatile content) in the photosensitive resin composition is preferably 10 to 50% by mass, more preferably 20 to 45% by mass. . By setting it as this range, each component can be fully dissolved or disperse|distributed. In addition, good applicability can be ensured, and the flatness at the time of spin coating can also be made good. Furthermore, the viscosity of the photosensitive resin composition can be appropriately controlled by adjusting the content of the non-volatile components. As another viewpoint, the ratio of the polyimide resin (A) and the polyfunctional (meth)acrylate compound (B) in the entire composition is preferably 20 to 50% by mass. By using the polyimide resin (A) and the polyfunctional (meth)acrylate compound (B) in a certain amount, it is easy to form a film with an appropriate thickness.

(other ingredients) In addition to the above-mentioned components, the photosensitive resin composition of this embodiment may contain components other than the above-mentioned components as needed. As such a component, fillers, such as water and silica (silica), a sensitizer, a film-forming agent, etc. are mentioned, for example.

<Manufacturing method of electronic device, electronic device> The manufacturing method of the electronic device of this embodiment includes: a film forming step of forming a photosensitive resin film on a substrate using the above photosensitive resin composition; an exposing step of exposing the photosensitive resin film; and A developing step, which develops the exposed photosensitive resin film. Furthermore, the method of manufacturing an electronic device according to this embodiment preferably includes a thermosetting step of heating and curing the exposed photosensitive resin film after the above-mentioned developing step. Thereby, the cured film which has very sufficient heat resistance can be obtained. Thus, the electronic device provided with the cured film of the photosensitive resin composition of this embodiment can be manufactured.

Hereinafter, a method of manufacturing an electronic device according to this embodiment, a structure of an electronic device including a cured product of the photosensitive resin composition according to this embodiment, and the like will be described in more detail with reference to the drawings.

FIG. 1 is a longitudinal sectional view showing an example of an electronic device according to this embodiment. In addition, FIG. 2 is a partial enlarged view of the area surrounded by a dotted line in FIG. 1 . In the following description, the upper side in FIG. 1 is referred to as "upper" and the lower side is referred to as "lower".

An electronic device 1 shown in FIG. 1 has a so-called package-on-package structure including a through-electrode substrate 2 and a semiconductor package 3 mounted thereon.

The penetrating electrode substrate 2 includes an insulating layer 21 , a plurality of penetrating wirings 221 penetrating from the upper surface to the lower surface of the insulating layer 21 , a semiconductor chip 23 embedded in the insulating layer 21 , and a layer provided under the lower surface of the insulating layer 21 . The wiring layer 24 , the upper wiring layer 25 provided on the upper surface of the insulating layer 21 , and the solder bumps 26 provided on the lower surface of the lower wiring layer 24 .

The semiconductor package 3 has a package substrate 31, a semiconductor chip 32 mounted on the package substrate 31, a bonding wire 33 electrically connecting the semiconductor chip 32 and the package substrate 31, a sealing layer 34 embedded with the semiconductor chip 32 and the bonding wire 33, and a Solder bumps 35 on the lower surface of the package substrate 31 .

Furthermore, a semiconductor package 3 is stacked on the through-electrode substrate 2 . Thereby, the solder bump 35 of the semiconductor package 3 and the upper wiring layer 25 penetrating the electrode substrate 2 are electrically connected.

In such an electronic device 1 , there is no need to use a thick substrate such as an organic substrate including a core layer for the through-electrode substrate 2 , and thus the thickness can be easily reduced. Therefore, it is also possible to contribute to miniaturization of electronic equipment incorporating the electronic device 1 .

In addition, since the through-electrode substrate 2 and the semiconductor package 3 having mutually different semiconductor chips are laminated, the mounting density per unit area can be increased. Therefore, both miniaturization and high performance can be achieved.

Hereinafter, the through-electrode substrate 2 and the semiconductor package 3 will be described in further detail. The lower wiring layer 24 and the upper wiring layer 25 included in the through-electrode substrate 2 shown in FIG. 2 include an insulating layer, a wiring layer, a through wiring, and the like, respectively. Thereby, the lower wiring layer 24 and the upper wiring layer 25 include wiring inside and on the surface, and are electrically connected to each other through the penetrating wiring 221 penetrating the insulating layer 21 .

The wiring layer included in the lower wiring layer 24 is connected to the semiconductor chip 23 and the solder bump 26 . Therefore, the lower wiring layer 24 functions as a rewiring layer of the semiconductor chip 23 , and the solder bump 26 functions as an external terminal of the semiconductor chip 23 .

As described above, the penetrating wiring 221 shown in FIG. 2 is provided to penetrate the insulating layer 21 . Thereby, the lower wiring layer 24 and the upper wiring layer 25 are electrically connected, and the through-layer electrode substrate 2 and the semiconductor package 3 can be stacked, so that the electronic device 1 can be enhanced in functionality.

The wiring layer 253 included in the upper wiring layer 25 shown in FIG. 2 is connected to the through wiring 221 and the solder bump 35 . Therefore, the upper wiring layer 25 is electrically connected to the semiconductor chip 23 , functions as a rewiring layer of the semiconductor chip 23 , and also functions as an interposer between the semiconductor chip 23 and the package substrate 31 . The cured film of the photosensitive resin composition of this embodiment can be used for the insulating layer which comprises a rewiring layer.

According to this embodiment, it is possible to realize an electronic device that includes a semiconductor wafer 23 and a rewiring layer (upper wiring layer 25) provided on the surface of the semiconductor wafer 23, and the insulating layer in the rewiring layer is controlled by the It is composed of hardened photosensitive resin composition.

The effect of reinforcing the insulating layer 21 can be obtained by the penetrating wiring 221 penetrating the insulating layer 21 . Therefore, even when the mechanical strength of the lower wiring layer 24 or the upper wiring layer 25 is low, it is possible to prevent the mechanical strength of the penetrating electrode substrate 2 from decreasing. As a result, the lower wiring layer 24 or the upper wiring layer 25 can be further thinned, and the thickness of the electronic device 1 can be further reduced.

In addition, the electronic device 1 shown in FIG. 1 includes a through-wiring 222 provided on the upper surface of the semiconductor wafer 23 and penetrating the insulating layer 21 in addition to the through-wiring 221 . Thereby, the upper surface of the semiconductor wafer 23 and the upper wiring layer 25 can be electrically connected.

The insulating layer 21 is provided so as to cover the semiconductor wafer 23 . Thereby, the effect of protecting the semiconductor wafer 23 can be improved. As a result, the reliability of the electronic device 1 can be improved. In addition, an electronic device 1 that can be easily applied to a mounting method such as the package-on-package structure of this embodiment can be obtained.

The diameter W (see FIG. 2 ) of the penetrating wiring 221 is not particularly limited, but is preferably about 1 to 100 μm, more preferably about 2 to 80 μm. Thereby, the electrical conductivity of the penetrating wiring 221 can be ensured without impairing the mechanical properties of the insulating layer 21 .

The semiconductor package 3 shown in FIG. 1 can be any form of package. For example, QFP (Quad Flat Package), SOP (Small Outline Package), BGA (Ball Grid Array), CSP (Chip Size Package), QFN (Quad Flat Non-leaded Package), SON (Small Outline Non-leaded Package), LF-BGA (Lead Flame BGA), etc.

The arrangement of the semiconductor wafers 32 is not particularly limited, and as an example, a plurality of semiconductor wafers 32 are stacked in FIG. 1 . Thereby, high density of mounting density is realized. Furthermore, the plurality of semiconductor wafers 32 may be arranged side by side along the planar direction, or may be arranged side by side along the planar direction while being stacked along the thickness direction.

The packaging substrate 31 may be any substrate, for example, a substrate including an insulating layer, a wiring layer, and through wiring not shown in the figure. Among them, the solder bump 35 and the bonding wire 33 can be electrically connected via a through-wire.

The sealing layer 34 is made of, for example, a known sealing resin material. By providing such a sealing layer 34 , it is possible to protect the semiconductor wafer 32 or the bonding wire 33 from external force or external environment.

The semiconductor chip 23 included in the through-electrode substrate 2 and the semiconductor chip 32 included in the semiconductor package 3 are arranged close to each other. Thereby, advantages such as high-speed mutual communication and low loss can be enjoyed. From this point of view, for example, if one of the semiconductor chip 23 and the semiconductor chip 32 is used as a calculation element such as a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), or an AP (Application Processor), the other is used as a Memory elements such as DRAM (Dynamic Random Access Memory) and flash memory can be arranged close to each other in the same device. Thereby, it is possible to realize the electronic device 1 that achieves both high functionality and miniaturization.

Next, a method of manufacturing the electronic device 1 shown in FIG. 1 will be described.

FIG. 3 is a step diagram showing a method of manufacturing the electronic device 1 shown in FIG. 1 . 4 to 6 are views for explaining a method of manufacturing the electronic device 1 shown in FIG. 1 , respectively.

The manufacturing method of the electronic device 1 includes: a chip arrangement step S1, which obtains the insulating layer 21 by embedding the semiconductor chip 23 and the through wiring 221, 222 on the substrate 202; 21 and on the semiconductor wafer 23 to form an upper wiring layer 25; a substrate peeling step S3, which peels off the substrate 202; a lower wiring layer forming step S4, which forms a lower wiring layer 24; a solder bump forming step S5, which forms a solder bump 26 , so as to obtain the through-electrode substrate 2 ;

Among them, the upper wiring layer forming step S2 includes: a first resin film disposing step S20, which disposes a photosensitive resin varnish 5 (varnish-like photosensitive resin composition) on the insulating layer 21 and the semiconductor wafer 23, thereby obtaining a photosensitive resin layer 2510; the first exposure step S21, which performs exposure treatment on the photosensitive resin layer 2510; the first developing step S22, which implements development treatment on the photosensitive resin layer 2510; Implement hardening treatment; wiring layer forming step S24, which forms wiring layer 253; second resin film disposing step S25, which disposes photosensitive resin varnish 5 on photosensitive resin layer 2510 and wiring layer 253, thereby obtaining photosensitive resin layer 2520 The second exposure step S26, which implements exposure treatment on the photosensitive resin layer 2520; the second developing step S27, which implements development treatment on the photosensitive resin layer 2520; the second hardening step S28, which implements hardening on the photosensitive resin layer 2520 Processing; and a through-wiring forming step S29 of forming the through-wiring 254 in the opening 424 (through hole).

Hereinafter, each step will be described in order. The following manufacturing methods are examples and are not limited thereto.

[1] Wafer configuration step S1 First, as shown in FIG. 4( a ), a chip-embedded structure 27 is prepared, which includes: a substrate 202 , a semiconductor chip 23 disposed on The insulating layer 21 is provided in such a way that it enters the insulating layer.

The constituent material of the substrate 202 is not particularly limited, and examples thereof include metal materials, glass materials, ceramic materials, semiconductor materials, and organic materials. In addition, semiconductor wafers such as silicon wafers, glass wafers, and the like can also be used as the substrate 202 .

The semiconductor chip 23 is then mounted on the substrate 202 . In this manufacturing method, as an example, a plurality of semiconductor wafers 23 are separated from each other, and these are simultaneously provided on the same substrate 202 . The plurality of semiconductor wafers 23 may be of the same kind or of different kinds. In addition, the substrate 202 and the semiconductor wafer 23 may be fixed through an adhesive layer (not shown) such as a die-bonding film.

An interposer (not shown) may also be provided between the substrate 202 and the semiconductor wafer 23 as required. The interposer functions, for example, as a redistribution layer of the semiconductor wafer 23 . Therefore, the interposer may include pads (not shown) for electrically connecting to electrodes of the semiconductor wafer 23 to be described later. Thereby, the pad spacing and arrangement pattern of the semiconductor wafer 23 can be changed, and the degree of freedom in designing the electronic device 1 can be further improved. For the interposer, for example, inorganic substrates such as silicon substrates, ceramic substrates, and glass substrates, organic substrates such as resin substrates, and the like are used.

The insulating layer 21 may be, for example, a resin film (organic insulating layer) containing a thermosetting resin or a thermoplastic resin as a component of the photosensitive resin composition, or may be a general sealing material used in the technical field of semiconductors.

Examples of the constituent material of the through wirings 221 and 222 include copper or copper alloys, aluminum or aluminum alloys, gold or gold alloys, silver or silver alloys, nickel or nickel alloys, and the like.

Furthermore, it is also possible to prepare the chip-embedded structure 27 produced by a method different from the above.

[2] Upper layer wiring layer formation step S2 Next, an upper wiring layer 25 is formed on the insulating layer 21 and on the semiconductor wafer 23 .

[2-1] First resin film arrangement step S20 First, as shown in FIG. 4( b ), a photosensitive resin varnish 5 is applied (arranged) on the insulating layer 21 and the semiconductor wafer 23 . Thereby, as shown in FIG.4(c), the liquid coating film of the photosensitive resin varnish 5 is obtained. The photosensitive resin varnish 5 is the photosensitive resin composition of this embodiment.

Coating of the photosensitive resin varnish 5 is performed using, for example, a spin coater, a bar coater, a spray device, an inkjet device, or the like.

The viscosity of the photosensitive resin varnish 5 is not particularly limited, but is 10 cP to 6000 cP, preferably 20 cP to 5000 cP, more preferably 30 cP to 4000 cP. When the viscosity of the photosensitive resin varnish 5 is within the above range, a thinner photosensitive resin layer 2510 can be formed (see FIG. 4( d )). As a result, the upper wiring layer 25 can be made thinner, and the electronic device 1 can be easily reduced in thickness. The viscosity of the photosensitive resin varnish 5 is, for example, a value measured at a rotational speed of 100 rpm using a cone-plate viscometer (TV-25, manufactured by TOKI SANGYO CO., LTD.).

Next, the liquid coating of the photosensitive resin varnish 5 is dried. Thereby, the photosensitive resin layer 2510 shown in FIG. 4( d ) is obtained.

The drying conditions of the photosensitive resin varnish 5 are not particularly limited, and examples thereof include heating at a temperature of 80 to 150° C. for 1 to 60 minutes.

In this step, instead of the procedure of applying the photosensitive resin varnish 5 , a procedure of arranging a photosensitive resin film obtained by forming the photosensitive resin varnish 5 into a film may be employed. The photosensitive resin film is the photosensitive resin composition of the present embodiment and is a photosensitive resin film.

The photosensitive resin film is produced by, for example, coating the photosensitive resin varnish 5 on a base such as a carrier film with various coating devices, and then drying the obtained coating film.

After forming the photosensitive resin layer 2510 in this way, the photosensitive resin layer 2510 is subjected to a pre-exposure heat treatment as necessary. By performing heat treatment before exposure, the molecules contained in the photosensitive resin layer 2510 can be stabilized, thereby stabilizing the reaction in the first exposure step S21 described later. On the other hand, by heating under heating conditions as described later, the adverse effect of heating on the photoacid generator can be minimized.

The temperature of the heat treatment before exposure is preferably from 70 to 130°C, more preferably from 75 to 120°C, further preferably from 80 to 110°C. If the temperature of the pre-exposure heat treatment is lower than the above-mentioned lower limit, the purpose of stabilizing molecules by the pre-exposure heat treatment may not be achieved. On the other hand, if the temperature of the heat treatment before exposure is higher than the above upper limit, the activity of the photoacid generator becomes too active, resulting in the expansion of the influence that it is difficult to generate acid even when irradiated with light in the first exposure step S21 described later. , so that the processing accuracy of patterning may decrease.

The time of the pre-exposure heat treatment is appropriately set according to the temperature of the pre-exposure heat treatment, but at the above temperature, it is preferably 1 to 10 minutes, more preferably 2 to 8 minutes, further preferably 3 to 6 minutes. If the time of the pre-exposure heat treatment is less than the above lower limit, the heating time is insufficient, and therefore, the purpose of stabilizing molecules by the pre-exposure heat treatment may not be achieved. On the other hand, if the time of the heat treatment before exposure exceeds the above upper limit, the heating time will be too long, so even if the temperature of the heat treatment before exposure falls within the above range, the effect of the photoacid generator may be inhibited.

The environment of the heat treatment is not particularly limited. An inert gas atmosphere, a reducing gas atmosphere, etc. may be used, but in consideration of work efficiency, etc., it is under the atmosphere.

The environmental pressure is not particularly limited. It may be under reduced pressure or under increased pressure, but in consideration of work efficiency, etc., it is normal pressure. In addition, normal pressure refers to a pressure of about 30 to 150 kPa, preferably atmospheric pressure.

[2-2] First exposure step S21 Next, exposure processing is performed on the photosensitive resin layer 2510 .

First, as shown in FIG. 4( d ), a mask 412 is disposed on a specific region on the photosensitive resin layer 2510 . Thereafter, light (actinic radiation) is irradiated through the mask 412 . Thereby, exposure processing is performed on the photosensitive resin layer 2510 according to the pattern of the mask 412 .

In FIG. 4( d ), a case where the photosensitive resin layer 2510 has so-called negative photosensitivity is shown. In this example, the region of the photosensitive resin layer 2510 corresponding to the light-shielding portion of the mask 412 is dissolved in the developer.

On the other hand, in the region corresponding to the transmissive portion of the mask 412 , active chemical species are generated from the photosensitive agent (C). The active chemical species act as catalysts for the hardening reaction.

The exposure amount in the exposure processing is not particularly limited. 100-2000mJ/cm ² is preferable, and 200-1000mJ/cm ² is more preferable. Thereby, underexposure and overexposure in the photosensitive resin layer 2510 can be suppressed. As a result, high patterning accuracy can finally be realized. Thereafter, a post-exposure heat treatment is performed on the photosensitive resin layer 2510 as necessary.

The temperature of the post-exposure heat treatment is not particularly limited. Preferably it is 50-150 degreeC, More preferably, it is 50-130 degreeC, More preferably, it is 55-120 degreeC, Most preferably, it is 60-110 degreeC. By performing post-exposure heat treatment at such a temperature, the catalytic effect of the generated acid is sufficiently enhanced, and the thermosetting resin can be fully reacted in a shorter time. By setting the temperature within the above-mentioned range, it is possible to suppress a decrease in processing accuracy of patterning due to acceleration of acid diffusion. By making the temperature of post-exposure heat processing more than the said lower limit, the reaction rate of a thermosetting resin can be raised, and productivity can be improved. On the other hand, by making the temperature of post-exposure heat processing below the said upper limit, the fall of the processing precision of patterning by the acceleration|stimulation of acid diffusion can be suppressed.

The time for the post-exposure heat treatment is appropriately set according to the temperature of the post-exposure heat treatment. At the above temperature, it is preferably 1 to 30 minutes, more preferably 2 to 20 minutes, further preferably 3 to 15 minutes. By performing post-exposure heat treatment for such a period of time, the thermosetting resin can be sufficiently reacted, and the diffusion of acid can be suppressed, thereby suppressing a reduction in the processing accuracy of patterning.

The environment of post-exposure heat treatment is not particularly limited. An inert gas atmosphere, a reducing gas atmosphere, etc. may be used, but in consideration of work efficiency, etc., it is under the atmosphere.

The ambient pressure of post-exposure heat treatment is not particularly limited. It may be under reduced pressure or under increased pressure, but in consideration of work efficiency, etc., it is normal pressure. Thereby, pre-exposure heat treatment can be performed relatively easily. In addition, normal pressure refers to a pressure of about 30 to 150 kPa, preferably atmospheric pressure.

[2-3] First developing step S22 Next, a development process is performed on the photosensitive resin layer 2510 . Thereby, an opening 423 penetrating through the photosensitive resin layer 2510 is formed in a region corresponding to the light shielding portion of the mask 412 (see FIG. 5( e )).

As a developer, an organic developer, a water-soluble developer, etc. are mentioned, for example. In this embodiment, it is preferable that the developing solution contains an organic solvent. More specifically, the developing solution is preferably a developing solution mainly composed of an organic solvent (a developing solution in which 95% by mass or more of the components are organic solvents). By performing development with a developing solution containing an organic solvent, it is possible to suppress swelling of the pattern due to the developing solution, etc., compared to the case of performing development with an alkaline developing solution (aqueous system). That is, it is easier to obtain a fine pattern.

Specific examples of organic solvents that can be used in the developer include ketone-based solvents such as cyclopentanone, ester-based solvents such as propylene glycol monomethyl ether acetate (PGMEA) and butyl acetate, propylene glycol monomethyl Ether-based solvents such as ether, etc. As the developer, an organic solvent developer consisting only of an organic solvent and containing only unavoidable impurities can be used. Examples of unavoidable impurities include metal elements and moisture, but from the viewpoint of preventing contamination of electronic devices, the less unavoidable impurities are better.

The method of bringing the developer into contact with the photosensitive resin layer 2510 is not particularly limited. A generally known dipping method, a puddle method, a spray method, and the like can be appropriately applied.

The time of the developing step is usually about 5 to 300 seconds, preferably about 10 to 120 seconds, and is appropriately adjusted according to the film thickness of the resin film or the shape of the pattern to be formed.

[2-4] First hardening step S23 After the development treatment, curing treatment (post-development heat treatment) is performed on the photosensitive resin layer 2510 . The conditions of the hardening treatment are not particularly limited, and may be a heating temperature of about 160 to 250° C. and a heating time of about 30 to 240 minutes. Thereby, it is possible to cure the photosensitive resin layer 2510 while suppressing the influence of heat on the semiconductor wafer 23 , thereby obtaining the organic insulating layer 251 .

[2-5] Wiring layer formation step S24 Next, a wiring layer 253 is formed on the organic insulating layer 251 (see FIG. 5( f )). The wiring layer 253 is formed, for example, by forming a metal layer using a vapor phase film-forming method such as a sputtering method or a vacuum evaporation method, and then patterning it by a photolithography method and an etching method. Surface modification treatment such as plasma treatment may also be performed before forming the wiring layer 253 .

[2-6] Second resin film arrangement step S25 Next, as shown in FIG. 5( g ), a photosensitive resin layer 2520 is obtained in the same manner as in the first resin film disposing step S20 . The photosensitive resin layer 2520 is arranged to cover the wiring layer 253 . Thereafter, a pre-exposure heat treatment is performed on the photosensitive resin layer 2520 as necessary. The processing conditions are, for example, the conditions described in the first resin film arranging step S20.

[2-7] Second exposure step S26 Next, exposure processing is performed on the photosensitive resin layer 2520 . The processing conditions are, for example, the conditions described in the first exposure step S21. Thereafter, a post-exposure heat treatment is performed on the photosensitive resin layer 2520 as necessary. The processing conditions are, for example, the conditions described in the first exposure step S21.

[2-8] Second developing step S27 Next, a development process is performed on the photosensitive resin layer 2520 . The processing conditions are, for example, the conditions described in the first developing step S22. Thereby, the opening part 424 which penetrates the photosensitive resin layer 2510,2520 is formed (refer FIG.5(h)).

[2-9] Second hardening step S28 After the development treatment, curing treatment (post-development heat treatment) is performed on the photosensitive resin layer 2520 . The hardening conditions are, for example, the conditions described in the first hardening step S23. Thereby, the photosensitive resin layer 2520 is hardened, and the organic insulating layer 252 is obtained (see FIG. 6( i )).

In the present embodiment, the upper wiring layer 25 has two layers, the organic insulating layer 251 and the organic insulating layer 252 , but may have three or more layers. In this case, a series of steps from the additional wiring layer forming step S24 to the second curing step S28 may be repeated after the second curing step S28.

[2-10] Through wiring formation step S29 Next, the penetrating wiring 254 shown in FIG. 6( i ) is formed in the opening 424 .

Penetrating wiring 254 is formed using a known method, for example, the following method.

First, a seed layer (not shown) is formed on the organic insulating layer 252 . The seed layer is formed on the inner surface (side surface and bottom surface) of the opening 424 and the upper surface of the organic insulating layer 252 . As the seed layer, for example, a copper seed layer is used. Also, the seed layer is formed by, for example, sputtering. The seed layer may be made of the same kind of metal as that of the penetrating wiring 254 to be formed, or may be made of a different kind of metal.

Next, a resist layer (not shown) is formed on a region other than the opening 424 in the seed layer (not shown). Thereafter, the opening 424 is filled with metal using the resist layer as a mask. For this filling, for example, an electroplating method is used. Examples of the metal to be filled include copper or copper alloys, aluminum or aluminum alloys, gold or gold alloys, silver or silver alloys, nickel or nickel alloys, and the like. By embedding the conductive material in the opening 424 in this way, the penetrating wiring 254 is formed.

Next, the resist layer (not shown) is removed. Furthermore, the unillustrated seed layer on the organic insulating layer 252 is removed. For this purpose, a flash etching method can be used, for example. The formation position of the penetrating wiring 254 is not limited to the illustrated position.

[3] Substrate peeling step S3 Next, as shown in FIG. 6( j ), the substrate 202 is peeled off. Thereby, the lower surface of the insulating layer 21 is exposed.

[4] Lower layer wiring layer formation step S4 Next, as shown in FIG. 6( k ), the lower wiring layer 24 is formed on the lower surface side of the insulating layer 21 . The lower wiring layer 24 may be formed by any method, for example, may be formed in the same manner as the upper wiring layer forming step S2 described above. The lower wiring layer 24 thus formed is electrically connected to the upper wiring layer 25 via the through wiring 221 .

[5] Solder bump formation step S5 Next, as shown in FIG. 6( l ), solder bumps 26 are formed on the lower wiring layer 24 . In addition, a protective film such as a solder resist layer may be formed on the upper wiring layer 25 or the lower wiring layer 24 as needed. In this way, through-electrode substrate 2 is obtained.

The through-electrode substrate 2 shown in FIG. 6( l ) may be divided into a plurality of regions. Therefore, for example, a plurality of through-electrode substrates 2 can be efficiently manufactured by singulating the through-electrode substrates 2 along the dotted line shown in FIG. 6( l ). In addition, for singulation, for example, a diamond cutter or the like can be used.

[6] Lamination step S6 Next, the semiconductor package 3 is disposed on the singulated through-electrode substrate 2 . Thereby, the electronic device 1 shown in FIG. 1 is obtained.

Such a manufacturing method of the electronic device 1 can be applied to a wafer-level process or a panel-level process using a large-area substrate. Thereby, the manufacturing efficiency of the electronic device 1 can be improved, thereby achieving cost reduction.

＜Optical Device＞ The optical device of this embodiment includes: light emitting element; wiring, which is electrically connected to the light-emitting element; and insulating film, which covers the above-mentioned wiring, The insulating film is a cured film of the photosensitive resin composition.

Examples of optical devices include display devices such as liquid crystal displays, organic EL displays, touch panels, electronic paper, color filters, submillimeter LED displays, and micro LED displays; LEDs, submillimeter LEDs, micro LEDs, Light-emitting devices such as emitting diodes; light-receiving devices such as solar cells and CMOS, etc., can be used for rewiring layers, interlayer insulating films, sealing materials (outer coatings), etc. The photosensitive resin composition of this embodiment can be used especially suitably for a micro LED.

Hereinafter, a method of manufacturing an optical device according to this embodiment, a structure of an optical device including a cured product of the photosensitive resin composition according to this embodiment, and the like will be described in more detail with reference to the drawings.

(Film Forming Step: FIG. 7A ) In the film forming step, the photosensitive resin film 73 is formed on the surface side of the substrate 71 having the step 710 having the step using the photosensitive resin composition of the present embodiment. The substrate 71 is not particularly limited. As the substrate 71 , for example, a silicon wafer, a ceramic substrate, an aluminum substrate, a SiC wafer, a GaN wafer, and the like are exemplified. The step 710 is, for example, Cu redistribution. Of course, the level difference 710 can also be a level difference other than Cu redistribution. The height of the step 710 is, for example, 1-10 μm, preferably 1-5 μm. The thickness of the photosensitive resin film 73 (the thickness of the portion without the step 710 ) is, for example, 1-15 μm, preferably 1-10 μm. It is sufficient that the thickness is greater than the height of the step difference 710 .

As a method of forming the photosensitive resin film 73, a method of providing a liquid photosensitive resin composition on the substrate by spin coating, spray coating, dipping, printing, roll coating, inkjet or the like can be mentioned. Typically, the method of forming the resin film is spin coating. The thickness of the photosensitive resin film 73 can be adjusted by changing the film forming conditions or adjusting the viscosity of the photosensitive resin composition.

It is preferable to heat-dry the photosensitive resin film 73 after a film forming process and before an exposure process. This thermal drying may be referred to as "pre-baking (pre-bake)". The temperature of heat drying is normally 50-180 degreeC, Preferably it is 60-150 degreeC. In addition, the heating and drying time is usually 30 to 600 seconds, preferably about 30 to 300 seconds. The solvent in the photosensitive resin composition can be fully removed by this heat drying. Typically, heating is performed with a hot plate or an oven or the like.

(Exposure step: FIG. 7B ) In the exposure step, the photosensitive resin film 73 is exposed through the photomask 720 . Actinic light rays for exposure include, for example, X-rays, electron beams, ultraviolet rays, visible light, and the like. In terms of wavelength, active light of 200-500 nm is preferred. From the viewpoint of pattern resolution and ease of operation of the device, it is preferable that the light source is g-ray, h-ray or i-ray of a mercury lamp. Also, two or more types of light may be used in combination. As the exposure device, a contact aligner, a mirror projection or a stepper is preferable. The exposure amount in the exposure step is usually between 40-1500mJ/cm ² (preferably 80-1000mJ/cm ² ), which can be determined according to the sensitivity of the photosensitive resin composition, the film thickness of the resin film, and the desired pattern shape Wait for appropriate adjustments.

It is preferable to heat the resin film (post-exposure heating) between the exposure step and the image development step. Thereby, substances (photosensitive agent, etc.) that are cracked or decomposed by exposure react, and it can be expected that the pattern shape becomes favorable. The temperature and time of post-exposure heating are, for example, about 50 to 200° C. and about 10 to 600 seconds.

(Development step: Figure 7C) In the developing step, the photosensitive resin film exposed in the exposing step is developed using a developing solution. Thereby, a part of the photosensitive resin film 73 can be removed, and the resin film 73A provided with the opening 75 can be obtained. The photosensitive resin composition of this embodiment is normally a negative type. Therefore, the opening 75 is disposed at a portion corresponding to the light shielding portion of the mask 720 . The developing step can be performed, for example, by methods such as dipping, flooding, and spin coating.

In this embodiment, it is preferable that the developing solution contains an organic solvent. More specifically, the developing solution is preferably a developing solution mainly composed of an organic solvent (a developing solution in which 95% by mass or more of the components are organic solvents). By performing development with a developing solution containing an organic solvent, it is possible to suppress swelling of the pattern due to the developing solution, etc., compared to the case of performing development with an alkaline developing solution (aqueous system). That is, it is easier to obtain a fine pattern.

Specific examples of organic solvents that can be used in the developer include ketone-based solvents such as cyclopentanone, ester-based solvents such as propylene glycol monomethyl ether acetate (PGMEA) and butyl acetate, propylene glycol monomethyl Ether-based solvents such as ether, etc. As the developer, an organic solvent developer consisting only of an organic solvent and containing only unavoidable impurities can be used. In addition, there are metal elements as unavoidable impurities, but from the viewpoint of preventing contamination of electronic devices, the less unavoidable impurities are better.

The time of the developing step is usually about 5 to 300 seconds, preferably about 10 to 120 seconds, and is appropriately adjusted according to the film thickness of the resin film or the shape of the pattern to be formed.

Between the developing step and the subsequent step, for example, a curing step of curing the resin film 73A may be provided. Curing can be performed, for example, by heat-processing at 150-250 degreeC for 30-240 minutes. By forming the resin film 73A using the photosensitive resin composition of this embodiment, the surface (upper surface) of the resin film 73A has good flatness even after such a curing step.

(additional rewiring steps: Figure 7D) A Cu redistribution 711 different from the step 710 (eg, Cu redistribution) may be provided at a portion of the opening 75 provided in the developing step. At this time, since the upper surface of the resin film 73A has high flatness, the fine Cu rewiring 711 can be provided with high precision.

As mentioned above, although embodiment of this invention was described, these are only the example of this invention, and various structures other than the above-mentioned can also be employ|adopted. In addition, the present invention is not limited to the above-described embodiments, and modifications, improvements, and the like within the scope of achieving the object of the present invention are included in the present invention. [Example]

Embodiments of the present invention will be described in detail based on Examples and Comparative Examples. The present invention is not limited to the examples, but will be described first. Hereinafter, "TEMPO" is an abbreviation for "2,2,6,6-tetramethylpiperidin-1-oxyl". For other abbreviations, they will be properly explained in the text.

＜Synthesis of polyimide resin＞ (Synthesis of polyimide resin (A-1)) Add 304.2 g (0.95 moles) of 2,2'-bis(trifluoromethyl)benzidine (TFMB), 4,4'-(hexafluoroisoiso Propyl) diphthalic anhydride (6FDA) 355.39g (0.80 mol), 4,4'-oxydiphthalic dianhydride (4,4'-oxydiphthalic dianhydride) 62.04g (0.20 mol) and GBL1684g, in nitrogen Under ambient conditions, the reaction was carried out at room temperature for 16 hours, and the polymerization reaction was carried out. Next, the temperature of the reaction liquid was raised to 180° C. to react for 3 hours in an oil bath, and then cooled to room temperature to prepare a polyimide resin solution. Next, the reaction solution was added dropwise to a mixed solution of isopropanol/water=4/7 under stirring to precipitate a resin solid. After the obtained solid was roughly filtered, it was further washed with isopropanol/water=4/7 to obtain a white solid of polyimide. A polyimide resin (A-1) having an acid anhydride group at a terminal was obtained by vacuum-drying the obtained white solid at 200°C. The weight average molecular weight (Mw) of the polyimide resin (A-1) measured by GPC was 49,000. Also, the imidization rate of the polyimide resin (A-1) measured by NMR measurement was 98%.

(Synthesis of polyimide resin (A-2)) Add 268.3 g (MED-J) 268.3 g (0.95 Mole), 4-[4-(1,3-Dioxoisobenzofuran-5-ylcarbonyloxy)-2,3,5-trimethylphenyl]-2,3,6- Trimethylphenyl 1,3-dipentoxyisobenzofuran-5-carboxylate (TMPBP-TME) 494.87g (0.8 mol), 4,4'-oxydiphthalic dianhydride 62.04g (0.20 mol) and GBL1684g were reacted at room temperature for 16 hours under a nitrogen atmosphere, and a polymerization reaction was carried out. Next, in an oil bath, the temperature of the reaction solution was raised to 180° C. to react for 3 hours, and then cooled to room temperature to prepare a polyimide resin solution. Next, the reaction solution was added dropwise to a mixed solution of isopropanol/water=4/7 under stirring to precipitate a resin solid. After the obtained solid was roughly filtered, it was further washed with isopropanol/water=4/7 to obtain a white solid of polyimide. By vacuum-drying the obtained white solid at 200° C., a polyimide resin (A-2) having an acid anhydride group at the terminal was obtained. The weight average molecular weight (Mw) of the polyimide resin (A-2) measured by GPC was 49000. Also, the imidization rate of the polyimide resin (A-2) measured by NMR measurement was 98%.

(Synthesis of polyimide resin (A-3)) Add 304.22 g (0.95 mol) of 2,2'-bis(trifluoromethyl)benzidine (TFMB), 4-[4-(1,3- Dioxoisobenzofuran-5-ylcarbonyloxy)-2,3,5-trimethylphenyl]-2,3,6-trimethylphenyl 1,3-dioxoiso Benzofuran-5-carboxylate (TMPBP-TME) 494.87g (0.8 mol), 4,4'-oxydiphthalic dianhydride 62.04g (0.20 mol) and GBL1684g, under nitrogen atmosphere, in The reaction was carried out at room temperature for 16 hours to perform a polymerization reaction. Next, in an oil bath, the temperature of the reaction solution was raised to 180° C. to react for 3 hours, and then cooled to room temperature to prepare a polyimide resin solution. Next, the reaction solution was added dropwise to a mixed solution of isopropanol/water=4/7 under stirring to precipitate a resin solid. After the obtained solid was roughly filtered, it was further washed with isopropanol/water=4/7 to obtain a white solid of polyimide. By vacuum-drying the obtained white solid at 200° C., a polyimide resin (A-3) having an acid anhydride group at the terminal was obtained. The weight average molecular weight (Mw) of the polyimide resin (A-3) measured by GPC was 49000. Also, the imidization rate of the polyimide resin (A-3) measured by NMR measurement was 98%.

(Synthesis of polyimide resin (A-4)) Add 304.22 g (0.95 moles) of 2,2'-bis(trifluoromethyl)benzidine (TFMB), 4,4'-(hexafluoroisoiso Propyl) diphthalic anhydride (6FDA) 355.89g (0.8 mol), 4,4'-oxydiphthalic dianhydride 62.04g (0.20 mol) and GBL1684g, react at room temperature for 16 hours under nitrogen atmosphere , a polymerization reaction was carried out. Next, in an oil bath, the temperature of the reaction solution was raised to 180° C. to react for 3 hours, and then cooled to room temperature to prepare a polyimide resin solution. Next, the reaction solution was added dropwise to a mixed solution of isopropanol/water=4/7 under stirring to precipitate a resin solid. After the obtained solid was roughly filtered, it was further washed with isopropanol/water=4/7 to obtain a white solid of polyimide. By vacuum-drying the obtained white solid at 200° C., a polyimide resin (A-4) having an acid anhydride group at the terminal was obtained. The weight average molecular weight (Mw) of the polyimide resin (A-4) measured by GPC was 49000. Also, the imidization rate of the polyimide resin (A-4) measured by NMR measurement was 98%.

＜Preparation of photosensitive resin composition＞ Each raw material blended according to the following Table 1 was stirred at room temperature until the raw materials were completely dissolved to obtain a solution. Thereafter, the solution was filtered with a nylon filter having a pore size of 0.2 μm. In this way, a varnish-like photosensitive resin composition was obtained.

The details of the raw materials of each component in Table 1 are as follows.

＜(A) Polyimide resin＞ (A-1) Polyimide resin (A-1) synthesized above (A-2) Polyimide resin (A-2) synthesized above (A-3) Polyimide resin (A-3) synthesized above (A-4) Polyimide resin (A-4) synthesized above

＜(B) Multifunctional (meth)acrylate compound＞ (B-1) Viscoat #195 (manufactured by OSAKA ORGANIC CHEMICAL INDUSTRY LTD., 1,4-butanediol diacrylate) (B-2) Viscoat#802 (manufactured by OSAKA ORGANIC CHEMICAL INDUSTRY LTD., a mixture of compounds having 5 to 10 acryl groups) (B-3) A-9550 (manufactured by SHIN-NAKAMURA CHEMICAL CO, LTD., a mixture of compounds having 5 to 6 acryl groups) (B-4) Viscoat#300 (manufactured by OSAKA ORGANIC CHEMICAL INDUSTRY LTD., a mixture of compounds having 3 to 4 acryl groups)

The configurations of the aforementioned (B-1) to (B-4) are shown below.

＜(C) Sensitizer＞ (C-1) Irgacure OXE01 (manufactured by BASF Corporation, oxime ester type photoradical generator)

＜(E) Thermal radical generator＞ (E-1) PERKADOX BC (manufactured by KAYAKU NOURYON CORPORATION, organic peroxide, dicumyl peroxide)

＜(F) Crosslinking agent＞ (F-1) 4HBAGE (manufactured by Mitsubishi Chemical Corporation, 4-hydroxybutyl acrylate glycidyl ether, compound of chemical formula (2)) (F-2) CYCLOMER M100 (manufactured by DAICEL CORPORATION, 3,4-epoxycyclohexylmethyl methacrylate, compound of chemical formula (3))

＜(G) Silane coupling agent＞ (G-1) X-12-967C (manufactured by Shin-Etsu Chemical Co., Ltd.) (G-2) KBM-403 (manufactured by Shin-Etsu Chemical Co., Ltd.)

＜(H) Hardening catalyst＞ (H-1) 4,4'-sulfonyldiphenoltetraphenylphosphonium The synthesis method of the said hardening catalyst (H-1) is as follows. Put 37.5g (0.15mol) of 4,4'-bisphenol S and 100mL of methanol into a separable flask with a stirring device, stir and dissolve at room temperature, and then add 4.0g of sodium hydroxide in advance under stirring (0.1mol) dissolved in 50mL of methanol obtained solution. Next, a solution obtained by dissolving 41.9 g (0.1 mol) of tetraphenylphosphine bromide in 150 mL of methanol in advance was added. Stirring was continued for a while, and after adding 300 mL of methanol, the solution in the flask was added dropwise to a large amount of water while stirring to obtain a white precipitate. The precipitate was filtered and dried. Through the above steps, a white crystalline hardening catalyst (H-1) was obtained.

＜(I) Surfactant＞ (I-1) FC4432 (manufactured by 3M Company, fluorine-based)

＜(J) (Solvent)＞ (J-1) Gamma-butyrolactone (GBL) (J-2) Ethyl Lactate (EL)

＜(D) Polymerization inhibitor＞ (D-1) Irganox 1035 (manufactured by BASF Corporation, hindered phenolic compound) (D-2) Irganox 1010 (manufactured by BASF Corporation, hindered phenolic compound) (D-3) 4-Benzoyloxy TEMPO (manufactured by Seiko Chemical Co., Ltd., N-oxyl compound) (D-4) 2,6-di-tertiary butyl-p-cresol (manufactured by Tokyo Chemical Industry Co., Ltd., hindered phenol compound) (D-5) N,N-diphenylnitrosamide (manufactured by Tokyo Chemical Industry Co., Ltd., N-oxyl compound) (D-6) Cupferron (manufactured by Tokyo Chemical Industry Co., Ltd., N-oxyl compound) (D-7) TEMPO (Tokyo Chemical Industry Co., Ltd., N-oxyl compound) (D-8) 4-Hydroxy TEMPO (manufactured by Seiko Chemical Co., Ltd., N-oxyl compound) (D-9) Sebacic acid bis-TEMPO (manufactured by Seiko Chemical Co., Ltd., N-oxyl compound) (D-10) Irganox 1726 (manufactured by BASF Corporation, hindered phenolic compound) (D-11) Irganox 1520L (manufactured by BASF Corporation, hindered phenol compound)

The configurations of the aforementioned (D-1) to (D-11) are shown below.

＜Evaluation of focus margin＞ The photosensitive resin compositions of the respective examples and comparative examples were coated on a 12-inch copper-plated (Ra=0.08 μm) wafer using a spin coater so that the film thickness after drying would be 5 μm. Then, it dried at 120 degreeC for 3 minutes with the hotplate, and obtained the photosensitive resin film. Using an i-ray stepper (manufactured by CANON INC. FPA-5500iX NA=0.28), while changing the exposure amount from 190mJ to 550mJ at 30mJ/min, and changing the focus from -9μm to 1μm +3 μm, i-rays were irradiated to the photosensitive resin film through a photomask (a punching pattern in which circular through holes of 3 μmφ were drawn). Thereafter, cyclopentanone was used as a developer, developed at 2,500 rotations for 30 seconds, rinsed with PGMEA at 2,500 rotations for 10 seconds, and dried by rotating for 20 seconds to obtain a developed film (negative pattern). Thereafter, drying was performed at 170° C. for 10 minutes on a hot plate, and heat treatment was performed at 200° C. for 120 minutes in a nitrogen atmosphere thereafter. Through the above steps, a cured product of the photosensitive resin composition is obtained. Within the range of the exposure amount described above, for the through hole with 3 μmΦ without footing and bridging, calculate the difference between the maximum value and the minimum value of the focal point as the focal point margin, and record the results in Table 1. In each of the Examples and Comparative Examples, when the focus margin was calculated at a plurality of exposure amounts, the value of the largest focus margin was described.

<Evaluation of Tensile Elongation> (Preparation of test piece for measurement of tensile elongation) The photosensitive resin composition was spin-coated on an 8-inch silicon wafer so that the film thickness after drying became 10 μm, and then, By heating at 120°C for 3 minutes, a photosensitive resin film was obtained. The obtained photosensitive resin film was exposed to 300 mJ/cm ² using a high-pressure mercury lamp. Thereafter, the exposed resin film and the silicon wafer were dipped in cyclopentanone for 30 seconds. Furthermore, thereafter, heat treatment was performed at 200° C. for 120 minutes in a nitrogen atmosphere. Through the above steps, a cured product of the photosensitive resin composition is obtained. The obtained cured product was diced together with a silicon wafer to a width of 5 mm by a dicing machine, and then, was dipped in a 2% by mass hydrofluoric acid aqueous solution to peel off from the substrate. The peeled film was dried at 60° C. for 10 hours to obtain a test piece (30 mm×5 mm×10 μm thick).

(measurement of tensile elongation) Using a tensile tester (manufactured by Orientec Corporation, Tensilon RTC-1210A), a tensile test was performed on the obtained test piece by a method based on JIS K 7161 in an environment of 23° C., and the tensile elongation of the test piece was measured. The tensile speed in the tensile test was set at 5 mm/min. The unit of tensile elongation is %.

Table 1 shows the blending of the raw materials of each composition and the above-mentioned evaluation results.

Table 1 Comparative example 1 Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Example 9 Example 10 Example 11 Example 12 Example 13 Example 14 Polyimide resin (A) (A-1) 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 (A-2) - - - - - - - - - - - - - - - (A-3) - - - - - - - - - - - - - - - (A-4) - - - - - - - - - - - - - - - Multifunctional (meth)acrylate compound (B) (B-1) 70 - - - - - - - - - - - - - - (B-2) - 60 60 60 60 60 60 60 60 60 60 60 60 60 60 (B-3) - 20 20 20 20 20 20 20 20 20 20 20 20 20 20 (B-4) - 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Sensitizer (C) (C-1) 10 10 10 10 10 15 20 10 10 10 10 15 20 10 10 Thermal free radical generator (E) (E-1) 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Crosslinking agent (F) (F-1) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 (F-2) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 Silane coupling agent (G) (G-1) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 (G-2) 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 Hardening catalyst (H) (H-1) 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 Surfactant (I) (I-1) 0.04 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 Solvent (J) (J-1) 257 280 280 280 280 286 292 280 280 280 280 286 292 280 280 (J-2) 257 280 280 280 280 286 292 280 280 280 280 286 292 280 280 Polymerization inhibitor (D) (D-1) - 1 0.5 1.5 2 1 1 - - - - - - - - (D-2) - - - - - - - 1 0.5 1.5 2 1 1 - - (D-3) - - - - - - - - - - - - - 1 0.5 (D-4) - - - - - - - - - - - - - - - (D-5) - - - - - - - - - - - - - - - (D-6) - - - - - - - - - - - - - - - (D-7) - - - - - - - - - - - - - - - (D-8) - - - - - - - - - - - - - - - (D-9) - - - - - - - - - - - - - - - (D-10) - - - - - - - - - - - - - - - (D-11) - - - - - - - - - - - - - - - evaluate Focus margin [μm] 0 6 6 5 4 6 8 5 6 5 4 7 8 6 6 Elongation(%) 46 42 39 44 45 52 63 40 39 45 47 55 61 44 39 Table 1 (continued) Example 15 Example 16 Example 17 Example 18 Example 19 Example 20 Example 21 Example 22 Example 23 Example 24 Example 25 Example 26 Example 27 Example 28 Example 29 Example 30 Example 31 Example 32 Polyimide resin (A) (A-1) 100 100 100 100 100 100 100 100 100 100 100 100 - - - 100 100 100 (A-2) - - - - - - - - - - - - 100 - - - - - (A-3) - - - - - - - - - - - - - 100 - - - - (A-4) - - - - - - - - - - - - - - 100 - - - Multifunctional (meth)acrylate compound (B) (B-1) - - - - - - - - - - - - - - - - - - (B-2) 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 70 70 60 (B-3) 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 - - 20 (B-4) 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 - - 10 Sensitizer (C) (C-1) 10 10 15 20 10 10 10 10 10 10 10 10 20 20 20 10 20 15 Thermal free radical generator (E) (E-1) 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Crosslinking agent (F) (F-1) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 - (F-2) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 - Silane coupling agent (G) (G-1) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 (G-2) 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 Hardening catalyst (H) (H-1) 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 - Surfactant (I) (I-1) 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.04 0.04 0.04 Solvent (J) (J-1) 280 280 286 292 280 280 280 280 280 280 280 280 560 560 560 292 292 292 (J-2) 280 280 286 292 280 280 280 280 280 280 280 280 - - - 292 292 292 Polymerization inhibitor (D) (D-1) - - - - - - - - - - - - - - - - - - (D-2) - - - - - - - - - - - - 1 1 1 1 1 1 (D-3) 1.5 2 1 1 - - - - - - - - - - - - - - (D-4) - - - - 1 - - - - - - - - - - - - - (D-5) - - - - - 1 - - - - - - - - - - - - (D-6) - - - - - - 1 - - - - - - - - - - - (D-7) - - - - - - - 1 - - - - - - - - - - (D-8) - - - - - - - - 1 - - - - - - - - - (D-9) - - - - - - - - - 1 - - - - - - - - (D-10) - - - - - - - - - - 1 - - - - - - - (D-11) - - - - - - - - - - - 1 - - - - - - evaluate Focus margin [μm] 5 4 6 8 5 3 5 3 3 4 3 3 3 4 5 5 7 5 Elongation(%) 44 45 51 59 39 43 41 39 47 47 42 43 41 43 45 45 55 46

As shown in Table 1, the photosensitive resin compositions of Examples 1 to 32 had good elongation and a large focus margin.

This application claims priority based on Japanese Patent Application No. 2021-161640 filed on September 30, 2021, and uses all the contents disclosed therein.

1: Electronic device 2: Through the electrode substrate 3: Semiconductor packaging 5: Photosensitive resin varnish 21: Insulation layer 23: Semiconductor wafer 24: Lower wiring layer 25: Upper wiring layer 26: Solder bumps 27: Structure with chip embedded 31: Package substrate 32: Semiconductor wafer 33: Bonding wire 34: sealing layer 35: Solder bumps 202: Substrate 221: Through wiring 222: Through wiring 251: organic insulating layer 252: Organic insulating layer 253: wiring layer 254: Through wiring 412: mask 423: Opening 424: Opening 2510: photosensitive resin layer 2520: photosensitive resin layer 71: Substrate 73: Photosensitive resin film 73A: resin film 75: opening 710: step difference 711: Cu redistribution 720: mask S1: chip configuration steps S2: Upper wiring layer forming step S20: The first resin film configuration step S21: 1st exposure step S22: the first developing step S23: 1st hardening step S24: Wiring layer forming step S25: The second resin film configuration step S26: The second exposure step S27: the second developing step S28: 2nd hardening step S29: Through wiring forming step S3: Substrate peeling step S4: Step of forming the lower wiring layer S5: Solder bump formation step S6: layering step W: diameter

[FIG. 1] It is a longitudinal cross-sectional view which shows an example of the structure of the electronic device of this embodiment. [ Fig. 2 ] is a partially enlarged view of the area surrounded by a dotted line in Fig. 1 . [ Fig. 3 ] is a step diagram showing a method of manufacturing the electronic device shown in Fig. 1 . [ FIG. 4 ] is a diagram for explaining a method of manufacturing the electronic device shown in FIG. 1 . [ Fig. 5 ] is a diagram for explaining a method of manufacturing the electronic device shown in Fig. 1 . [ FIG. 6 ] is a diagram for explaining a method of manufacturing the electronic device shown in FIG. 1 . [FIG. 7] It is a figure for demonstrating the method of manufacturing the optical device of this embodiment.

1: Electronic device

2: Through the electrode substrate

3: Semiconductor packaging

21: Insulation layer

23: Semiconductor wafer

24: Lower wiring layer

25: Upper wiring layer

26: Solder bumps

31: Package substrate

32: Semiconductor wafer

33: Bonding wire

34: sealing layer

35: Solder bumps

221: Through wiring

222: Through wiring

253: wiring layer

Claims (23)

A photosensitive resin composition, which contains: polyimide resin (A); multifunctional (meth)acrylate compound (B); photosensitizer (C); and polymerization inhibitor (D), the aforementioned polyimide The amine resin (A) has a structure represented by the following general formula (a), In the general formula (a), X is a divalent organic group, and Y is a tetravalent organic group. The photosensitive resin composition according to claim 1, wherein the molar number of imide groups contained in the aforementioned polyimide resin (A) is set as IM, and the molar number of the aforementioned polyimide resin (A) is When the molar number of amide groups contained is AM, the amide imidization rate represented by {IM/(IM+AM)}×100 (%) is 90% or more. The photosensitive resin composition according to claim 1 or 2, wherein the polyimide resin (A) contains a polyimide resin containing fluorine atoms. The photosensitive resin composition according to claim 1 or 2, wherein the aforementioned polyfunctional (meth)acrylate compound (B) includes a 3-4 functional (meth)acrylate compound (B1). The photosensitive resin composition according to claim 1 or 2, wherein the polyfunctional (meth)acrylate compound (B) includes a pentafunctional or more functional (meth)acrylate compound (B2). The photosensitive resin composition according to claim 1 or 2, wherein the content of the polyfunctional (meth)acrylate compound (B) is 25 parts by mass or more with respect to 100 parts by mass of the polyimide resin (A) and 100 parts by mass or less. The photosensitive resin composition according to claim 1 or 2, wherein the photosensitive agent (C) contains a photoradical generator. The photosensitive resin composition according to claim 7, wherein the photoradical generator includes an oxime ester-based photoradical generator. The photosensitive resin composition according to claim 1 or 2, wherein the content of the photosensitive agent (C) is not less than 5 parts by mass and not more than 30 parts by mass relative to 100 parts by mass of the polyimide resin (A). The photosensitive resin composition according to claim 1 or 2, wherein the polymerization inhibitor (D) contains one or two or more compounds selected from hindered phenolic compounds and N-oxyl compounds. The photosensitive resin composition according to claim 1 or 2, wherein the content of the polymerization inhibitor (D) is 0.1 to 5 parts by mass relative to 100 parts by mass of the polyimide resin (A). The photosensitive resin composition according to claim 1 or 2, wherein the content of the polymerization inhibitor (D) is 1 part by mass or more and 30 parts by mass or less with respect to 100 parts by mass of the photosensitive agent (C). The photosensitive resin composition according to claim 1 or 2, which further contains a thermal radical generator (E). The photosensitive resin composition according to claim 1 or 2, which further contains a crosslinking agent (F). The photosensitive resin composition according to claim 14, wherein the crosslinking agent (F) contains a group having an epoxy group at one end and a (meth)acryl group at the other end of the molecule. compound. The photosensitive resin composition according to claim 1 or 2, which further contains a silane coupling agent (G). The photosensitive resin composition according to claim 1 or 2, which is used to form an insulating layer in an electronic device. The photosensitive resin composition according to claim 1 or 2, which is used to form an insulating layer in an optical device. A method of manufacturing an electronic device, comprising: A film forming step of forming a photosensitive resin film on a substrate using the photosensitive resin composition of claim 1 or 2; an exposing step of exposing the aforementioned photosensitive resin film; and A developing step of developing the exposed photosensitive resin film. The method of manufacturing an electronic device according to claim 19, which includes a thermosetting step of heating and curing the exposed photosensitive resin film after the developing step. An electronic device comprising a cured film of the photosensitive resin composition according to claim 1 or 2. An optical device having: light emitting element; wiring, which is electrically connected to the aforementioned light emitting element; and an insulating film covering the aforementioned wiring, and The aforementioned insulating film is a cured film of the photosensitive resin composition of claim 1 or 2. The optical device according to claim 22, wherein the aforementioned light emitting element is a micro LED.

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