TW202329085A - Electronic apparatus - Google Patents

Abstract

Provided is an electronic apparatus with low power consumption. The electronic apparatus comprises a first display device and a second display device. The first display device has a first display unit, and the second display device has a second display unit. A plurality of first pixels are arranged in the first display unit, and a plurality of second pixels are arranged in the second display unit. The first display device overlaps the second display device. The second display unit is provided so as to surround at least a part of the first display unit when viewed in plan. An occupied area per first pixel is smaller than an occupied area per second pixel.

Description

electronic device

One embodiment of the present invention relates to an electronic device. One embodiment of the present invention relates to a wearable electronic device with a display device.

Note that one embodiment of the present invention is not limited to the technical fields described above. Examples of the technical field of one embodiment of the present invention disclosed in this specification include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting equipment, input devices, input-output device, its driving method, or its manufacturing method.

In recent years, HMD (Head Mounted Display) type electronic devices suitable for applications such as virtual reality (VR: Virtual Reality) and augmented reality (AR: Augmented Reality) have been popularized. The HMD can display 360-degree images around the user according to the user's head movement and the user's line of sight or operation, so the user can get a higher sense of immersion and reality.

Since the higher the pixel density of the HMD, the higher the HMD can display a high-definition image, for example, it is difficult for the user to see the pixels. As a result, users of the HMD are not likely to experience graininess, so users can obtain a high sense of immersion and realism. On the other hand, since it is difficult to increase the occupied area of the display unit of the HMD when increasing the pixel density of the HMD, for example, it may be difficult to display video in all directions around the user in 360 degrees.

A display device including a first display, a second display having a lower pixel density than the first display, and an optical combiner is disclosed in Patent Document 1. In the display device, the user can see images by the light emitted from the first display reflected by the optical combiner and the light emitted from the second display transmitted through the optical combiner entering the user's eyes of the display device. The first display displays a first image viewed from the center of the user's field of view of the display device and its vicinity, and the second display displays a second image displayed around the first image. In the display device shown in Patent Document 1, by making the pixel density of the second display lower than that of the first display, compared with the case where the pixel density of the second display is equal to the pixel density of the first display, it is possible to The user of the display device does not feel a decrease in image quality by increasing the occupied area of the entire display unit.

[Patent Document 1] Specification of U.S. Patent Application Publication No. 2020/0033613

In the structure disclosed in Patent Document 1, light emitted from the first display and transmitted through the optical combiner and light emitted from the second display and reflected by the optical combiner become losses. To make up for this loss, power consumption of the first display and the second display increases when the brightness of light emitted from the first display and the second display is increased.

One of the objectives of an embodiment of the present invention is to provide an electronic device with low power consumption. In addition, one of the objectives of an embodiment of the present invention is to provide an electronic device in which a user can view high-brightness images. In addition, an object of an embodiment of the present invention is to provide an electronic device including a display device for displaying high-quality images. Furthermore, one of the objects of one embodiment of the present invention is to provide an electronic device including a display device driven at high speed. Furthermore, one of the objects of an embodiment of the present invention is to provide a small electronic device. Furthermore, one of the objects of an embodiment of the present invention is to provide an electronic device with high reliability. Furthermore, one of the objects of an embodiment of the present invention is to provide a novel electronic device.

Note that the description of these purposes does not prevent the existence of other purposes. Note that it is not necessary for an embodiment of the present invention to achieve all of the above objects. Note that objects other than the above can be derived from descriptions in the specification, drawings, claims, and the like.

One embodiment of the present invention is an electronic device, including: a first display device; and a second display device, wherein the first display device includes a first display part, the second display device includes a second display part, and the first display device includes a second display part. A plurality of first pixels are arranged in a portion, a plurality of second pixels are arranged in a second display portion, the first display device overlaps with the second display device, and the second display portion surrounds at least a part of the first display portion in plan view. way, and the occupied area of each first pixel is smaller than the occupied area of each second pixel.

One embodiment of the present invention is an electronic device, including: a first display device; and a second display device, wherein the first display device includes a first substrate, a first display part on the first substrate, and a first display part on the first display part. The second substrate, the second display device includes a third substrate, a second display portion on the third substrate, and a fourth substrate on the second display portion, a plurality of first pixels are arranged in the first display portion, and a plurality of first pixels are arranged in the second display portion. A plurality of second pixels are arranged in the display part, the second substrate overlaps with the third substrate, the second substrate, the third substrate and the fourth substrate transmit the light emitted from the first pixel, and the second display part surrounds the first pixel when viewed from above. At least a part of the display portion is arranged in such a way that the occupied area of each first pixel is smaller than the occupied area of each second pixel.

In the above embodiments, the first substrate may also be a semiconductor substrate.

In the above embodiment, the thickness of the third substrate may be thinner than that of the first substrate.

In the above embodiments, the third substrate may also have flexibility.

In the above embodiments, an adhesive layer may also be provided between the second substrate and the third substrate.

In the above embodiments, the second display unit may include a region that does not overlap the first display unit.

In the above embodiments, the second display device may include a third display unit, the third display unit may overlap the first display unit, and the third display unit may transmit light emitted from the first pixel.

In the above embodiments, the electronic device may also include a communication circuit, a control circuit, a first source driver circuit, and a second source driver circuit. The first source driver circuit may also be electrically connected to the first pixel, and the second source driver circuit may also be electrically connected to the first pixel. The driver circuit may also be electrically connected to the second pixel, the communication circuit may also have the function of receiving image data, and the control circuit may also have the following function: generate first data representing the brightness of light emitted from the first pixel according to the image data and Second data indicating brightness of light emitted from the second pixel is supplied to the first source driver circuit, and the second data is supplied to the second source driver circuit.

In the above embodiments, the first pixel may also include a first light-emitting element, the second pixel may also include a second light-emitting element, and the first light-emitting element may also include a first pixel electrode and a first EL layer on the first pixel electrode. , the first EL layer can also cover the end of the first pixel electrode, the second light-emitting element can also include the second pixel electrode and the second EL layer on the second pixel electrode, and can also be between the second pixel electrode and the second pixel electrode. An insulating layer covering an end portion of the second pixel electrode is provided between the EL layers.

According to one embodiment of the present invention, an electronic device with low power consumption can be provided. In addition, an embodiment of the present invention can provide an electronic device in which a user can view a high-brightness image. In addition, an embodiment of the present invention may provide an electronic device including a display device displaying high-quality images. In addition, according to one embodiment of the present invention, an electronic device including a display device driven at high speed may be provided. Furthermore, according to one embodiment of the present invention, a small electronic device can be provided. In addition, an electronic device with high reliability can be provided according to an embodiment of the present invention. Furthermore, a novel electronic device can be provided according to an embodiment of the present invention.

Note that the mention of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all the above effects. Note that effects other than the above can be derived from descriptions in the specification, drawings, claims, and the like.

Embodiments will be described below with reference to the drawings. Note that those skilled in the art can easily understand the fact that the embodiments can be implemented in many different forms, and the methods and details can be changed without departing from the spirit and scope of the present invention. for various forms. Therefore, the present invention should not be interpreted as being limited only to the contents described in the embodiments shown below.

Note that in the configuration of the invention described below, the same reference numerals are commonly used between different drawings to denote the same parts or parts having the same functions, and repeated description thereof will be omitted. In addition, the same hatching is sometimes used when indicating a portion having the same function, without particularly attaching a reference symbol.

In addition, in order to facilitate understanding, the positions, sizes, ranges, etc. of each component shown in the drawings may not represent the actual positions, sizes, ranges, etc. thereof. Therefore, the disclosed invention is not necessarily limited to the positions, sizes, ranges, etc. disclosed in the drawings.

In addition, "film" and "layer" may be interchanged with each other depending on the situation or state. For example, "conductive layer" may sometimes be changed to "conductive film". Alternatively, for example, "insulating film" may be changed to "insulating layer". Alternatively, for example, "semiconductor film" may be changed to "semiconductor layer".

In this specification and the like, for the sake of convenience, the positional relationship of components is described with reference to the drawings by using words and phrases indicating arrangement such as "upper", "lower", "above" or "below". In addition, the positional relationship of the components is appropriately changed according to the directions in which the respective structures are described. Therefore, the words and phrases described in this specification and the like are not limited, and words and phrases may be appropriately replaced according to circumstances. For example, in the expression "an insulating layer located on a conductive layer", by rotating the direction of the illustrated drawing by 180 degrees, it can also be called an "insulating layer located below a conductive layer".

In this specification and the like, unless otherwise specified, the off-state current refers to the drain current when the transistor is in an off state (also referred to as a non-conductive state or an interrupted state). In the absence of special instructions, in n-channel transistors, the off state means that the voltage V _gs between the gate and source is lower than the critical voltage V _th (V _gs is higher than V _th in p-channel transistors) status.

In this specification and the like, metal oxide refers to an oxide of a metal in a broad sense. Metal oxides are classified into oxide insulators, oxide conductors (including transparent oxide conductors), oxide semiconductors (Oxide Semiconductor, also referred to as OS), and the like. For example, when a metal oxide is used for an active layer of a transistor, the metal oxide is sometimes called an oxide semiconductor. In other words, the "OS transistor" in this specification and the like may also be referred to as a transistor including a metal oxide or an oxide semiconductor.

Embodiment 1 In this embodiment mode, an electronic device, a display device, and the like according to one embodiment of the present invention will be described. One embodiment of the present invention can be applied, for example, to a wearable electronic device for VR or AR use, specifically to an HMD.

An electronic device according to an embodiment of the present invention includes a first display device and a second display device. The first display device and the second display device respectively include a display part, and pixels are arranged in a matrix in the display part. A pixel includes a light-emitting element (also referred to as a light-emitting device) that emits visible light. The light-emitting element emits light with a brightness corresponding to the image data, and an image can be displayed on the display unit.

In this specification and the like, visible light refers to light having a wavelength of 380 nm or more and less than 780 nm. In addition, infrared light refers to light having a wavelength of 780 nm or more. In addition, near-infrared light refers to the light whose wavelength is 780 nm or more and 2500 nm or less. In addition, the case where the peak wavelength of light emitted from the light-emitting element is within the range of visible light, infrared light, and near-infrared light refers to the case where the light-emitting element emits visible light, infrared light, and near-infrared light, respectively.

In this specification and the like, a light emitting element includes an EL layer between a pair of electrodes. The EL layer includes at least a light emitting layer. Here, the layers (also referred to as functional layers) included in the EL layer include light emitting layer, carrier injection layer (hole injection layer and electron injection layer), carrier transport layer (hole transport layer and Electron transport layer) and carrier barrier layer (hole barrier layer and electron barrier layer), etc.

In one embodiment of the present invention, the first display device is arranged to overlap with the second display device. In addition, the display unit included in the second display device is provided so as to surround the display unit included in the first display device in plan view. Thus, for example, the first display device can display the first image seen by the user's visual field center and its vicinity, and the second display device can display the second image displayed around the first image. Here, since the light emitted from the first display device passes through the second display device, the region of the second display device overlapping with the display portion of the first display device transmits the light emitted from the first display device.

In this specification and the like, when A transmits light B, the transmittance of A to light B is 5% or more.

Humans finely recognize images in and around the center of the visual field and roughly recognize images outside it. For example, humans finely recognize images in the central field of view and effective field of view and roughly recognize images in the peripheral field of view. Therefore, even if the definition of the second image is lower than that of the first image, the user of the electronic device will not easily feel the degradation of the image quality, such as seldom feel the graininess. On the other hand, since the pixel density of the second display device can be reduced by reducing the definition of the second image, for example, the occupied area of the entire display part can be increased. As described above, by making the resolution of the second image lower than that of the first image, compared with the case where the resolution of the entire image displayed on the electronic device is uniform, the display unit included in the electronic device can be enlarged. The overall occupied area, and the user of the electronic device does not feel the degradation of the image quality.

By setting the first display device in such a way that it overlaps with the second display device, for example, the first display device does not overlap the second display device, which is similar to the case where the first image and the second image are combined using an optical combiner such as a half mirror. Therefore, the loss of light emitted from the display device can be reduced, for example, the loss of light emitted from the first display device can be reduced. Therefore, the electronic device according to one embodiment of the present invention can be a low power consumption electronic device. In addition, the user of the electronic device according to an embodiment of the present invention can see high-brightness images.

<Structure example of electronic device> FIG. 1A is an external view showing a configuration example of an electronic device 10 as an electronic device according to an embodiment of the present invention. The electronic device 10 may be an HMD. Also, the electronic device 10 may be called a goggle type electronic device. Alternatively, sometimes the electronic device 10 may also be called a glasses-type electronic device.

The electronic device 10 includes a housing 31, a fixing tool 32, a pair of lenses 35 (lens 35L and lens 35R), a pair of mirror frames 36 (mirror frames 36L and 36R), and a pair of display portions 37 (display portion 37L and display portion 37R). In addition, the electronic device 10 may include a communication circuit 57 and a control circuit 59 .

In the electronic device 10 , for example, the communication circuit 57 receives image data from the outside of the electronic device 10 . The communication circuit 57 supplies the received image data to the control circuit 59 . The control circuit 59 controls to display an image on the display unit 37 according to the received image data. The image displayed on the display unit 37 is magnified by the lens 35 , and the user of the electronic device 10 sees the image.

FIG. 1B is a perspective view showing a configuration example of the display unit 37 . Here, the structure shown in FIG. 1B can be used for the display portion 37L and the display portion 37R.

The display unit 37 includes a display unit 37a and a display unit 37b. The display portion 37a may be the center of the display portion 37 and its vicinity, and the display portion 37b may be the surrounding area of the display portion 37a. That is, the display portion 37b is provided so as to surround the display portion 37a in plan view. Thus, the user of the electronic device 10 can see the image displayed on the display portion 37 a from the center of the field of view and its vicinity, and see the image displayed on the display portion 37 b from the peripheral field of view. Note that the center of the display portion 37 may be located on the display portion 37b instead of the display portion 37a. In addition, the display part 37b does not need to surround the whole display part 37a. For example, when the shape of the display part 37a is a rectangle, the display part 37b does not need to surround all four sides of the display part 37a. For example, the display portion 37b may surround three of the four sides included in the display portion 37a. Alternatively, the display portion 37b may surround all parts of two of the four sides included in the display portion 37a and surround a part of the remaining two sides.

A plurality of pixels 27a are arranged in the display portion 37a, for example, the pixels 27a are arranged in a matrix. A plurality of pixels 27b are arranged in the display portion 37b. Pixel 27 (pixel 27 a and pixel 27 b ) includes a light-emitting element that emits visible light, and light emitted from the light-emitting element is emitted from pixel 27 as light 34 (light 34 a and light 34 b ), so that an image can be displayed on display unit 37 . Note that light emitted from pixel 27a is light 34a, and light emitted from pixel 27b is light 34b.

As a light emitting element, for example, OLED (Organic Light Emitting Diode; organic light emitting diode) or QLED (Quantum-dot Light Emitting Diode; quantum dot light emitting diode) are preferably used. As the light-emitting substance contained in the light-emitting element, for example, a substance that emits fluorescence (fluorescent material), a substance that emits phosphorescence (phosphorescent material), a substance that exhibits thermally activated delayed fluorescence (Thermally Activated Delayed Fluorescence (Thermally Activated Delayed Fluorescence) Fluorescence: TADF) materials) and inorganic compounds (such as quantum dot materials). In addition, LEDs such as Micro LEDs (Light Emitting Diodes) can also be used as light emitting elements.

In addition, a pixel circuit used to control the driving of the light emitting element is provided in the pixel 27 . The pixel circuit includes transistors. Thus, the pixels 27 can be driven in an active matrix manner.

As shown in FIG. 1B , the pixel density of the display portion 37 a is higher than that of the display portion 37 b. For example, the occupied area per pixel 27a provided in the display portion 37a is smaller than the occupied area per pixel 27b provided in the display portion 37b. In addition, the distance between adjacent pixels 27a is shorter than the distance between adjacent pixels 27b. As described above, the display unit 37a can display images viewed by the user's visual field center and its vicinity, and the display unit 37b can display images viewed by the peripheral visual field of the user of the electronic device 10 . Here, a person finely recognizes images in the center of the visual field and its vicinity and roughly recognizes images outside it. For example, humans finely recognize images in the central field of view and effective field of view and roughly recognize images in the peripheral field of view. Therefore, even if the pixel density of the display portion 37b is lower than that of the display portion 37a and the resolution of the image displayed on the display portion 37b is lower than the resolution of the image displayed on the display portion 37a, the user of the electronic device 10 will feel uncomfortable. Less image quality degradation, such as graininess, is less felt. On the other hand, by reducing the pixel density of the display portion 37b, for example, the occupied area of the display portion 37 as a whole can be increased. As described above, by making the pixel density of the display portion 37b lower than that of the display portion 37a, the occupied area of the display portion 37 can be increased compared with the case where the pixel density of the entire display portion 37 is uniform, and the electronic device of users do not experience a drop in image quality.

FIG. 2A is a cross-sectional view showing a structural example taken along the dashed-dotted line A1 - A2 in FIG. 1B , and is also a cross-sectional view showing a structural example of a display device including the display portion 37 . As shown in FIG. 2A , a display portion 37 a is included in the display device 41 a and a display portion 37 b is included in the display device 41 b.

The display device 41a includes a substrate 11a, a layer 12a on the substrate 11a, and a substrate 13a on the layer 12a, and the display portion 37a is provided in the layer 12a. The display device 41b includes a substrate 11b, a layer 12b on the substrate 11b, and a substrate 13b on the layer 12b, and the display portion 37b is provided in the layer 12b. In addition, for example, a drive circuit for driving the display device 41a is provided in the layer 12a, and a drive circuit for driving the display device 41b is provided in the layer 12b. For example, transistors are provided in these drive circuits, so the layers 12a and 12b include transistors.

The display device 41b is provided on the display device 41a. The display device 41a overlaps the display device 41b. Specifically, for example, the substrate 13a overlaps the substrate 11b. For example, the substrate 13a includes a region in contact with the substrate 11b, and the display device 41a is fixed under the display device 41b. For example, the display device 41a can be fixed under the display device 41b by installing a first housing in the display device 41a and a second housing in the display device 41b and engaging the first housing with the second housing. In addition, the display device 41b includes an area that does not overlap the display device 41a. Specifically, for example, the substrate 11b includes a region that does not overlap the substrate 13a.

The display unit 37a can display images by emitting the light 34a. The display unit 37b can display images by emitting the light 34b. Light 34a passes through substrate 13a, substrate 11b, layer 12b, and substrate 13b. The light 34b passes through the substrate 13b. As described above, the substrate 13a, the substrate 11b, the layer 12b, and the substrate 13b have a structure through which the light 34a passes. In addition, the substrate 13b has a structure through which the light 34b passes. Here, the substrate 11a may have a structure that does not transmit the light 34a and the light 34b. Therefore, the substrate 11a may have a structure that does not transmit visible light, for example. On the other hand, the substrate 11b, the substrate 13a, and the substrate 13b have, for example, a structure through which visible light passes.

The display portion 37a is provided so as to include a region that does not overlap with the display portion 37b. Thus, even if the display portion 37b does not transmit the light 34a or the transmittance of the light 34a of the display portion 37b is lower than the transmittance of the light 34a in the region where the display portion 37b is not provided in the layer 12b, the incident The light 34a of the display device 41b is extracted to the outside of the display device 41b. Therefore, the user of the electronic device 10 including the display device 41a and the display device 41b can see the image displayed on the display portion 37a.

Note that a part of the display portion 37a may overlap the display portion 37b. Specifically, an end portion of the display portion 37a may overlap the display portion 37b, and an end portion of the display portion 37b may overlap the display portion 37a. By adopting such a structure, it is possible to prevent the formation of a region where the display portion 37 is not provided between the display portion 37a and the display portion 37b. Accordingly, it is possible to prevent the user of the electronic device 10 from seeing the boundary between the display portion 37a and the display portion 37b. Here, even if a part of the display portion 37a overlaps the display portion 37b, as long as the area of the display portion 37b that does not overlap the display portion 37a surrounds the display portion 37a in a plan view, it can be said that the display portion 37b surrounds the display portion 37a. mode settings.

As described above, in the electronic device 10, the display device 41a is provided so as to overlap the display device 41b, and the display unit 37b included in the display device 41b is provided so as to surround the display unit 37a included in the display device 41a in plan view. Thus, for example, compared with the case where the display device 41a does not overlap the display device 41b and the image displayed on the display part 37a and the image displayed on the display part 37b are combined by an optical combiner such as a half mirror, the light 34a can be reduced. Loss. In addition, the loss of light 34b can sometimes be reduced. Therefore, the electronic device 10 can be an electronic device with low power consumption. In addition, the user of the electronic device 10 can see high-brightness images.

Materials that can be used for the substrate 11a, the substrate 11b, the substrate 13a, or the substrate 13b will be described below.

As described above, the substrate 11a may have, for example, a structure that does not transmit visible light. Therefore, for example, a semiconductor substrate can be used as the substrate 11a. Specifically, as the substrate 11a, a single crystal semiconductor substrate or polycrystalline semiconductor substrate made of silicon or silicon carbide, a compound semiconductor substrate made of silicon germanium or the like, an SOI substrate, or the like can be used.

As described above, the substrate 13a, the substrate 11b, and the substrate 13b have, for example, a structure through which visible light passes. Therefore, as the substrate 13a, the substrate 11b, and the substrate 13b, for example, a glass substrate, a quartz substrate, a sapphire substrate, or a plastic substrate is used. Note that a glass substrate, a quartz substrate, a sapphire substrate, a plastic substrate, or the like may also be used for the substrate 11a as the insulator substrate.

The thickness of the substrate 11a, the substrate 13a, the substrate 11b, and the substrate 13b may be 50 μm or more and 2 mm or less, preferably 50 μm or more and 1 mm or less, more preferably 50 μm or more and 500 μm or less, and further preferably 50 μm or more and 300 μm or less.

Various optical members may be disposed on the surface of the substrate 13a opposite to the display portion 37a and the surface of the substrate 13b opposite to the display portion 37b. As an optical member, a polarizing plate, a retardation film, a light-diffusion layer (diffusion film etc.), an antireflection layer, a light-condensing film (condensing film), etc. are mentioned.

2B is a modified example of the structure shown in FIG. 2A. The difference between FIG. 2B and the structure of FIG. 2A is that the display device 41b includes a substrate 15 instead of the substrate 11b and a substrate 16 instead of the substrate 13b.

The substrate 15 and the substrate 16 have flexibility. Thus, the display device 41b shown in FIG. 2B has flexibility. Therefore, the display device 41b shown in FIG. 2B can be said to be a flexible display.

A flexible substrate may be thinner than a non-flexible substrate. Therefore, for example, the thickness of the substrate 15 and the substrate 16 may be thinner than the thickness of the substrate 11a. As described above, when the display device 41b is a flexible display, for example, the difference between the height of the display portion 37b and the height of the display portion 37a based on the surface of the substrate 11a can be reduced. Thus, for example, since the difference between the distance from the eyes of the user of the electronic device 10 to the display unit 37a and the distance from the eyes of the user of the electronic device 10 to the display unit 37b can be reduced, the image displayed on the display unit 37a can be suppressed. One or both of the images displayed on the display unit 37b are blurred. Therefore, the user of the electronic device 10 can watch high-quality images.

For example, by reducing the difference between the height of the display portion 37b and the height of the display portion 37a based on the surface of the substrate 11a, the light 34a emitted from the display portion 37a included in the display device 41a can be prevented from entering the display portion 37b. For example, when the electrodes of the light-emitting elements included in the display portion 37b reflect visible light, the light 34a incident on the display portion 37b is reflected by the electrodes and is not extracted to the outside of the display device 41b, so by suppressing the light 34a from entering the display portion 37b, can improve the light extraction efficiency of the display device 41a.

Note that, in the display device shown in FIG. 2B , the substrate 13 b shown in FIG. 2A may also be provided instead of the substrate 16 . That is, among the substrates included in the display device 41b, only the substrate provided between the display portion 37a and the display portion 37b may have flexibility. In addition, the substrate 13a included in the display device 41a may also have flexibility. Note that, for example, the thickness of the substrate 11b shown in FIG. 2A may be made thinner than the thickness of the substrate 11a. That is, the substrate included in the display device 41b may be made thinner than the substrate 11a while the substrate is not flexible. In addition, the thickness of the substrate 13a may be made thinner than the thickness of the substrate 11a while the substrate 13a is a non-flexible substrate.

As the flexible substrate, the following materials can be used: polyester resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyamide Imine resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyether sulfide (PES) resin, polyamide resin (nylon or aromatic polyamide, etc.), polysiloxane resin, cyclo Olefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin or cellulose nanofibers, etc. In addition, glass having a thickness of a degree of flexibility can also be used. Here, by using the above-mentioned material for the substrate, the substrate can transmit visible light.

The thickness of the flexible substrate is within a range where both flexibility and mechanical strength can be achieved. For example, the thickness of the flexible substrate may be 1 μm to 300 μm, preferably 10 μm to 300 μm, more preferably 10 μm to 100 μm, further preferably 10 μm to 50 μm. Note that, for example, the substrate 11b shown in FIG. 2A may also be within this thickness range. That is, the thickness of the substrate included in the display device 41b may be within the above thickness range while being non-flexible.

In the structure shown later, the substrate 15 may be used instead of the substrate 11b and the substrate 16 may be used instead of the substrate 13b.

FIG. 2C is a modified example of the structure shown in FIG. 2B . The difference between FIG. 2C and FIG. 2B is that the display device 41 a does not include the substrate 13 a. For example, the various optical members described above may be directly provided on the layer 12a and the display device 41b may be provided thereon.

By omitting the substrate 13a, for example, the difference between the height of the display portion 37b and the height of the display portion 37a based on the surface of the substrate 11a can be reduced. Thus, the user of the electronic device 10 can watch high-quality images. In addition, since the light 34a can be suppressed from entering the display portion 37b, the light extraction efficiency of the display device 41a can be improved. Note that, in the display device 41 b shown in FIG. 2C , a substrate 11 b may be provided instead of the substrate 15 and a substrate 13 b may be provided instead of the substrate 16 . That is, even if the substrate 13a is not provided in the display device 41a, the substrate provided in the display device 41b may not have flexibility.

FIG. 3A is a modified example of the structure shown in FIG. 2A . The difference between FIG. 3A and the structure shown in FIG. 2A is that an adhesive layer 14 is provided between the substrate 13 a and the substrate 11 b. The adhesive layer 14 transmits the light 34a. The adhesive layer 14 transmits visible light, for example.

By bonding the display device 41a and the display device 41b together using the adhesive layer 14, it is possible to suppress the formation of a gap between the display device 41a and the display device 41b. Thereby, the light 34a emitted from the display device 41a can be suppressed from being reflected or refracted by the gap. Therefore, the display device 41a can display high-quality images.

As described above, it is preferable to provide the adhesive layer 14 in a region on the substrate 13a that does not overlap the display portion 37b. On the other hand, the adhesive layer 14 does not need to be provided in the area which does not overlap with the display part 37b on the board|substrate 13a.

As the adhesive layer 14 , various curable adhesives such as photocurable adhesives such as ultraviolet curable adhesives, reaction curable adhesives, thermosetting adhesives, and anaerobic adhesives can be used. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, and PVB (polyvinyl butyral) resin, EVA (ethylene-vinyl acetate) resin, etc. In particular, it is preferable to use a material with low moisture permeability such as epoxy resin. In addition, a two-liquid mixed type resin can also be used. In addition, for example, an adhesive sheet can also be used.

3B is a modified example of the structure shown in FIG. 2A. The difference between FIG. 3B and the structure shown in FIG. A substrate 11b is provided on 12b.

For example, in the display device 41b shown in FIG. 2A, a drive circuit is provided below the display portion 37b. On the other hand, in the display device 41b shown in FIG. 3B, a drive circuit is provided above the display portion 37b. In addition, for example, in the display device 41b shown in FIG. 2A , the light 34b emitted from the display portion 37b passes through the substrate 13b. On the other hand, in the display device 41b shown in FIG. 3B, the light 34b passes through the substrate 11b. For example, the display device 41b shown in FIG. 2A is a top emission display device, and the display device 41b shown in FIG. 3B is a bottom emission display device.

FIG. 3C is a modified example of the structure shown in FIG. 2A . The difference between FIG. 3C and the structure shown in FIG. 2A is that a display device 41 a is provided on the display device 41 b. As described above, the substrate 11a may have, for example, a structure that does not transmit visible light. Therefore, for example, the display portion 37b may be provided so as to overlap the entirety of the display portion 37a. In addition, the substrate 11b has, for example, a structure that does not transmit visible light.

FIG. 4A is a modified example of the structure shown in FIG. 2A. The difference between FIG. 4A and the structure shown in FIG. 2A is that a display portion 37c is provided in the layer 12b of the display device 41b. The display unit 37c is provided so as to overlap the display unit 37a included in the display device 41a. In the configuration shown in FIG. 4A , the display unit 37 includes a display unit 37a, a display unit 37b, and a display unit 37c. Although not shown, a plurality of pixels are arranged in the display unit 37c, for example, the pixels are arranged in a matrix. The pixel includes a light-emitting element that emits visible light, and by emitting the light emitted from the light-emitting element from the pixel as light 34c, an image can be displayed on the display portion 37c. Here, the pixel density of the display portion 37c is lower than that of the display portion 37a, and may be equal to the pixel density of the display portion 37b. Therefore, the resolution of the video displayed on the display unit 37c is lower than that of the video displayed on the display unit 37a, and may be equal to the resolution of the video displayed on the display unit 37b.

The light 34c passes through the substrate 13b. In addition, the above-mentioned pixel includes a pixel circuit having a function of controlling the driving of the light-emitting element. As mentioned above, the pixel circuit includes transistors.

In the configuration shown in FIG. 4A , the light 34a emitted from the display portion 37a enters the display portion 37c. Therefore, the display portion 37c has a structure in which the light 34a passes through, and specifically, the display portion 37c has a structure in which the transmittance of the light 34a is higher than that of the display portion 37b. For example, the display portion 37c has a structure through which visible light is transmitted. Specifically, the visible light transmittance of the display portion 37c is higher than that of the display portion 37b. For example, the electrodes included in the light emitting element provided in the display portion 37c have a structure through which the light 34a passes. In addition, the layer among the transistors included in the pixel circuit provided in the display portion 37c is a layer through which the light 34a passes. In addition, when the pixel circuit has a capacitor, for example, the layer constituting the capacitor is a layer through which the light 34 a passes. In addition, for example, wiring provided in the display portion 37c also has a structure through which the light 34a passes. As described above, the display portion 37c can transmit the light 34a.

As described above, in the structure shown in FIG. 4A , the user of the electronic device 10 can see the image displayed on the display unit 37c included in the display device 41b and the image displayed on the display unit 37a included in the display device 41a in superposition. . Here, it is preferable to display the video on the display unit 37a and the display unit 37c because the resolution of the video that can be displayed on the display unit 37c is lower than that of the video that can be displayed on the display unit 37a. For example, a mark such as a cursor indicating a point to pay attention to in the video displayed on the display unit 37 a may be displayed on the display unit 37 c.

FIG. 4B is a modified example of the structure shown in FIG. 4A . The difference between FIG. 4B and the structure shown in FIG. 4A is that the display portion 37 c includes a region that does not overlap the display portion 37 a. Note that FIG. 4B shows an example in which the display device 41b does not include the display portion 37b, but the display device 41b may also include the display portion 37b. For example, the display unit 37b may be provided in a region that does not overlap the display device 41a. Note that, in the configuration shown in FIG. 4B , there may be cases where the outside light 44 is transmitted through a region of the display unit 37 c that does not overlap the display device 41 a.

FIG. 5A is a block diagram showing a configuration example of a display device 41a including a display portion 37a. As described above, a plurality of pixels 27a are arranged in the display portion 37a, for example, the pixels 27a are arranged in a matrix. In addition, the display device 41a includes a gate driver circuit 42a and a source driver circuit 43a. Although not shown in FIG. 5A, the gate driver circuit 42a and the source driver circuit 43a are electrically connected to the pixel 27a. The gate driver circuit 42a and the source driver circuit 43a are drive circuits of the display device 41a.

In the display device 41a, image data can be written to the pixel 27a selected by the gate driver circuit 42a by the source driver circuit 43a. By writing the image data into the pixel 27a, the pixel 27a emits the light 34a with the brightness corresponding to the image data. Thereby, video can be displayed on the display unit 37a.

FIG. 5B is a block diagram showing a configuration example of a display device 41b including a display portion 37b. As described above, a plurality of pixels 27b are arranged in the display portion 37b. Here, a region 47 in which the pixels 27 b are not arranged is provided in the display device 41 b, and the display portion 37 b is provided so as to surround the region 47 . The area 47 is an area overlapping the display portion 37a of the display device 41a. Note that when the display device 41b has the structure shown in FIG. 4A, the area 47 is provided with the display portion 37c. In addition, when the display device 41b has the structure shown in FIG. 4B, the display part 37c is provided instead of the display part 37b, and the display part 37c is also provided in the area|region 47.

The display device 41b includes a gate driver circuit 42b and a source driver circuit 43b. Although not shown in FIG. 5B, the gate driver circuit 42b and the source driver circuit 43b are electrically connected to the pixel 27b. The gate driver circuit 42b and the source driver circuit 43b are drive circuits of the display device 41b.

In the display device 41b, image data can be written to the pixel 27b selected by the gate driver circuit 42b by the source driver circuit 43b. By writing video data to the pixel 27b, the pixel 27b emits light 34b with a brightness corresponding to the video data, thereby displaying a video on the display unit 37b.

FIG. 6A is a perspective view showing a structural example of the display device 41a. As shown in FIG. 6A , display device 41 a may include layer 40 , layer 50 on layer 40 , and layer 60 on layer 50 .

A plurality of pixel circuits 51 are arranged in layer 50 , and a plurality of light emitting elements 61 are arranged in layer 60 . The pixel circuit 51 is electrically connected to the light emitting element 61, which is used as a pixel 27a. Therefore, a region where the plurality of pixel circuits 51 provided in the layer 50 overlaps with the plurality of light emitting elements 61 provided in the layer 60 is used as the display portion 37a.

In the layer 40, a gate driver circuit 42a and a source driver circuit 43a are provided. Since the gate driver circuit 42a and the source driver circuit 43a are provided in a layer different from the pixel circuit 51, the gate driver circuit 42a and the source driver circuit 43a can be provided overlapping the display portion 37a. Therefore, compared with the case where the gate driver circuit 42a and the source driver circuit 43a are provided so as not to overlap the display portion 37a, the width of the frame around the display portion 37a can be reduced. Therefore, the occupied area of the display portion 37a can be increased.

By stacking the pixel circuit 51, the gate driver circuit 42a, and the source driver circuit 43a, wiring for electrically connecting them can be shortened. Therefore, wiring resistance and parasitic capacitance are reduced. Thereby, for example, since the time required for charging and discharging the wiring can be shortened, the display device 41a can be driven at high speed. Furthermore, since the power consumption of the display device 41a can be reduced, the power consumption of the electronic device 10 can be reduced.

Note that the gate driver circuit 42 a and the source driver circuit 43 a may also be provided in the same layer as the pixel circuit 51 . At this time, for example, the transistors included in the gate driver circuit 42a, the transistors included in the source driver circuit 43a, and the transistors included in the pixel circuit 51 can be formed in the same process. Furthermore, for example, a part of the transistors included in the gate driver circuit 42 a and a part of the transistors included in the source driver circuit 43 a may also be provided in the layer 50 . That is to say, the gate driver circuit 42 a and the source driver circuit 43 a may also be provided in the layer 40 and the layer 50 . Furthermore, one of gate driver circuit 42 a and source driver circuit 43 a may also be provided in layer 40 and the other of gate driver circuit 42 a and source driver circuit 43 a may also be provided in layer 50 .

FIG. 6B is a modification example of the structure shown in FIG. 6A, and also shows an example in which a plurality of gate driver circuits 42a and a plurality of source driver circuits 43a are provided. FIG. 6B shows an example in which gate driver circuits 42 a and source driver circuits 43 a are provided in two rows and two columns.

In FIG. 6B, the gate driver circuit 42a of 2 rows and 2 columns is described as gate driver circuit 42a[1,1], gate driver circuit 42a[1,2], gate driver circuit 42a[2,1] and the gate driver circuit 42a[2,2]. In addition, the source driver circuit 43a of 2 rows and 2 columns is described as source driver circuit 43a[1,1], source driver circuit 43a[1,2], source driver circuit 43a[2,1], and source driver circuit 43a[1,1]. The driver circuit 43a[2,2] is distinguished.

By providing a plurality of gate driver circuits 42a, wiring for electrically connecting the pixel circuit 51 and the gate driver circuits 42a can be shortened. Specifically, the maximum value of the wiring length from the pixel circuit 51 to the gate driver circuit 42a can be reduced. In addition, by providing a plurality of source driver circuits 43a, wiring for electrically connecting the pixel circuit 51 and the source driver circuits 43a can be shortened. Specifically, the maximum value of the wiring length from the pixel circuit 51 to the source driver circuit 43a can be reduced. Therefore, wiring resistance and parasitic capacitance are reduced. Thereby, for example, since the time required for charging and discharging the wiring can be shortened, the display device 41a can be driven at high speed. Furthermore, since the power consumption of the display device 41a can be reduced, the power consumption of the electronic device 10 can be reduced. Furthermore, since, for example, the number of rows of pixel circuits 51 scanned by one gate driver circuit 42a can be reduced, the frame frequency of the display device 41a can be increased.

FIG. 6B shows an example in which the gate driver circuit 42a includes a region overlapping the source driver circuit 43a, but the gate driver circuit 42a and the source driver circuit 43a need not overlap. By having a structure in which the gate driver circuit 42a includes a region overlapping with the source driver circuit 43a, the layout flexibility of the gate driver circuit 42a and the source driver circuit 43a can be improved. On the other hand, by adopting a structure in which the gate driver circuit 42a does not overlap the source driver circuit 43a, it is possible to suppress the driving of the gate driver circuit 42a and the driving of the source driver circuit 43a from being affected by each other.

FIG. 7 is a modified example of the structure shown in FIG. 6A, and also shows an example in which the communication circuit 57 and the control circuit 59 shown in FIG. 1A are provided in the layer 40 in addition to the gate driver circuit 42a and the source driver circuit 43a. That is, an example is shown in which the communication circuit 57 and the control circuit 59 are provided in the display device 41 a so as to include a region overlapping with the display unit 37 a. This makes it possible to increase the area occupied by the display unit 37 compared to the case where the communication circuit 57 and the control circuit 59 are provided outside the display device 41 a. Note that circuits other than the communication circuit 57 and the control circuit 59 provided in the electronic device 10 may also be provided in the layer 40 .

In the display device 41 a shown in FIG. 7 , one or both of the gate driver circuit 42 a and the source driver circuit 43 a may also be provided in the layer 50 . Thereby, the occupied area of the area where the communication circuit 57, the control circuit 59, etc. are provided can be enlarged.

FIG. 8 is a block diagram showing a structural example of the electronic device 10 . The display device 41a, the display device 41b, the communication circuit 57, and the control circuit 59 included in the electronic device 10 send and receive various data and signals to each other through the bus BW. Here, the display unit 37L shown in FIG. 1A includes a display unit 37aL and a display unit 37bL, and the display unit 37R includes a display unit 37aR and a display unit 37bR. Furthermore, the display device 41a including the display portion 37aL is a display device 41aL, and the display device 41a including the display portion 37aR is a display device 41aR. In addition, the gate driver circuit 42a and the source driver circuit 43a included in the display device 41aL are respectively the gate driver circuit 42aL and the source driver circuit 43aL, and the gate driver circuit 42a and the source driver circuit 43a included in the display device 41aR These are the gate driver circuit 42aR and the source driver circuit 43aR, respectively. In addition, the display device 41b including the display portion 37bL is a display device 41bL, and the display device 41b including the display portion 37bR is a display device 41bR. Furthermore, the gate driver circuit 42b, the source driver circuit 43b and the region 47 included in the display device 41bL are respectively the gate driver circuit 42bL, the source driver circuit 43bL and the region 47L, and the gate driver circuit included in the display device 41bR 42b, source driver circuit 43b and region 47 are gate driver circuit 42bR, source driver circuit 43bR and region 47R, respectively.

The communication circuit 57 has a function of wirelessly or wiredly communicating with external devices. The communication circuit 57 has, for example, a function of receiving image data from an external device. In addition, the communication circuit 57 may also have the function of sending the data generated by the electronic device 10 to an external device.

For example, a high-frequency circuit (RF circuit) may be provided in the communication circuit 57 to transmit and receive RF signals. A high-frequency circuit is a circuit that converts electromagnetic signals and electrical signals in frequency bands prescribed by the laws and regulations of each country, and communicates with other communication devices wirelessly using the electromagnetic signals. When performing wireless communication, as a communication protocol or communication technology, communication standards such as LTE (Long Term Evolution: Long Term Evolution), GSM (Global System for Mobile Communication: a trademark registered in Japan: Global System for Mobile Communications), EDGE ( Enhanced Data Rates for GSM Evolution: GSM Enhanced Data Rate Evolution), CDMA2000 (Code Division Multiple Access 2000: Code Division Multiple Access 2000), W-CDMA (Wideband Code Division Multiple Access: Trademark registered in Japan: Wideband Code Division Multiple Access ); or specifications standardized by IEEE (Institute of Electrical and Electronics Engineers) communications such as Wi-Fi (Wireless Fidelity: registered trademark in Japan: Wireless Fidelity), Bluetooth (registered trademark in Japan: Bluetooth), ZigBee (registered trademark in Japan trademark), etc. In addition, the third generation mobile communication system (3G), the fourth generation mobile communication system (4G) or the fifth generation mobile communication system (5G), etc. determined by the International Telecommunication Union (ITU) can be used.

In addition, the communication circuit 57 may include an external port such as a LAN (Local Area Network) connection terminal, a digital broadcast reception terminal, or a terminal for connecting to an AC adapter.

The control circuit 59, for example, has data (first luminance data) representing the luminance of light emitted by the light-emitting elements provided in the display portion 37a based on the image data received by the communication circuit 57 and data representing the luminance of light emitted by the light-emitting elements provided in the display portion 37b. A function of the brightness data (second brightness data) of the emitted light. For example, when the image data has address information of pixels and brightness information of each pixel, the control circuit 59 can select whether to include the brightness information of each pixel in the first brightness data or in the second brightness data according to the address information. Note that brightness data can also be called image data.

Here, the control circuit 59 may have a down-conversion function for reducing the resolution of the image data. In addition, the control circuit 59 may also have a function of performing up-conversion to increase the resolution of the video data. For example, the control circuit 59 can down-convert the second luminance data. In addition, the control circuit 59 can also up-convert the first luminance data.

The control circuit 59 has the following functions: to supply the first luminance data to the display device 41a, specifically to the source driver circuit 43a included in the display device 41a, to supply the second luminance data to the display device 41b, specifically to supply to the source driver circuit 43b included in the display device 41b.

As the control circuit 59 , microprocessors such as a central processing unit (CPU: Central Processing Unit), a DSP (Digital Signal Processor: Digital Signal Processor), or a GPU (Graphics Processing Unit: Graphics Processing Unit) can be used alone or in combination. In addition, these microprocessors can also be implemented by PLD (Programmable Logic Device: Programmable Logic Device) such as FPGA (Field Programmable Gate Array) or FPAA (Field Programmable Analog Array: Field Programmable Analog Array). constitute.

The control circuit 59 can perform various data processing and program control by interpreting and executing instructions from various programs by the processor. Programs executable by the processor can be stored in the memory area of the processor, or in an additional memory circuit. As the memory circuit, for example, a memory device to which a non-volatile memory element is applied, such as a flash memory, MRAM (Magnetoresistive Random Access Memory), PRAM (Phase change RAM: phase change random access memory), ReRAM ( Resistive RAM: Resistive Random Access Memory), FeRAM (Ferroelectric RAM: Ferroelectric Random Access Memory), etc., or memory devices suitable for volatile memory elements such as DRAM (Dynamic RAM) and SRAM (Static RAM: Static Random Access Memory) access memory), etc.

FIG. 8 shows an example in which the display device 41b does not include the display portion 37c, but the display device 41b may include the display portion 37c. In this case, the gate driver circuit 42b and the source driver circuit 43b can control the driving of the pixels included in the display section 37c in addition to the pixels included in the display section 37b. 8 shows an example in which the communication circuit 57 and the control circuit 59 are provided outside the display device 41a and the display device 41b, but the communication circuit 57 and the control circuit 59 may be provided in the display device 41a, for example.

<Structure example of the display part> A structural example of a display device included in an electronic device according to an embodiment of the present invention will be described below with reference to FIGS. 9A to 9C and FIGS. 10A to 10C . Specifically, a structural example of a light emitting element provided in a pixel included in a display portion of a display device will be described. 9A to 9C show structural examples of display devices that can be applied to the display device 41a, and FIGS. 10A to 10C show structural examples of display devices that can be applied to the display device 41b. Note that the display device shown in FIGS. 9A to 9C can also be used for the display device 41b, and the display device shown in FIGS. 10A to 10C can also be used for the display device 41a.

FIG. 9A is a cross-sectional view showing a structural example of a light emitting element 61R, a light emitting element 61G, and a light emitting element 61B. The light emitting element 61R can emit light 34aR having intensity in the red wavelength region. Light emitting element 61G can emit light 34aG having intensity in the green wavelength region. Light emitting element 61B can emit light 34aB having intensity in the blue wavelength region. Here, one pixel may have a structure including, for example, one light emitting element 61R, one light emitting element 61G, and one light emitting element 61B. Furthermore, a pixel includes sub-pixels, and one sub-pixel may have, for example, a structure including any one of the light-emitting element 61R, the light-emitting element 61G, and the light-emitting element 61B. As described above, FIG. 9A is an example in which one pixel includes three sub-pixels. Note that Embodiment 2 can be referred to regarding the pixel layout of a display device included in an electronic device according to an embodiment of the present invention.

Here, the red light may be, for example, light having a peak wavelength of not less than 630 nm and not more than 780 nm. In addition, green light may be, for example, light having a peak wavelength of not less than 500 nm and less than 570 nm. In addition, blue light may be light whose peak wavelength is 450 nm or more and less than 480 nm, for example.

In this specification and the like, in a sub-pixel provided with a light-emitting element, the area of the EL layer in plan view is the occupied area of the sub-pixel. In addition, the sum of the occupied areas of sub-pixels constituting a pixel is the occupied area of a pixel. For example, when a pixel includes three sub-pixels, the sum of the occupied areas of the three sub-pixels is the occupied area of the pixel.

In the display device shown in FIG. 9A, a layer 363 is provided on the substrate 11a. In the layer 363, for example, the pixel circuit 51 shown in FIG. 6A is provided. In addition, drive circuits for the display device 41 a such as the gate driver circuit 42 a and the source driver circuit 43 a are provided in the layer 363 . For example, transistors are provided in these circuits, so layer 363 includes transistors.

An insulating layer is provided in such a way as to cover the transistors provided in layer 363 . This insulating layer is also included in layer 363 . The insulating layer may have either a single layer structure or a stacked layer structure. In addition, one or both of an inorganic insulating film and an organic insulating film can be used as the insulating layer. Examples of the inorganic insulating film include oxide insulating films such as a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, an aluminum oxynitride film, and a hafnium oxide film, and nitrides. insulating film. Examples of organic insulating films include acrylic resins, polyimide resins, epoxy resins, imide resins, polyamide resins, polyimideamide resins, silicone resins, siloxane resins, benzocyclo Butene resins, phenolic resins and precursors of these resins, etc.

Note that, in this specification, nitrogen oxides refer to compounds in which the nitrogen content is greater than the oxygen content. In addition, an oxynitride refers to a compound having an oxygen content greater than a nitrogen content. In addition, for example, the content of each element can be measured using Rutherford Backscattering Spectrometry (RBS: Rutherford Backscattering Spectrometry).

The light emitting element 61R, the light emitting element 61G, and the light emitting element 61B are all provided on the layer 363 . Specifically, the light-emitting element 61R, the light-emitting element 61G, and the light-emitting element 61B may be provided on the above-mentioned insulating layer provided in the layer 363 .

The light emitting element 61R includes the conductive layer 171 on the layer 363 , the EL layer 172R on the conductive layer 171 , and the conductive layer 173 on the EL layer 172R. The light emitting element 61G includes the conductive layer 171 on the layer 363 , the EL layer 172G on the conductive layer 171 , and the conductive layer 173 on the EL layer 172G. Light emitting element 61B includes conductive layer 171 on layer 363 , EL layer 172B on conductive layer 171 , and conductive layer 173 on EL layer 172B.

In this specification and the like, a structure in which at least light-emitting layers are separately produced in light-emitting elements having different light-emitting wavelengths may be referred to as an SBS (Side By Side) structure. For example, a light emitting element 61R, a light emitting element 61G, and a light emitting element 61B shown in FIG. 9A have an SBS structure. In the SBS structure, the material and structure of each light emitting element can be optimized individually, the flexibility of material and structure selection increases, and the improvement of luminance and reliability becomes easy.

The conductive layer 171 is used as a pixel electrode and is separated for each light emitting element. In addition, the conductive layer 173 is used as a common electrode, and is provided as a continuous layer commonly used among the light emitting element 61R, the light emitting element 61G, and the light emitting element 61B.

The EL layer 172R, the EL layer 172G, and the EL layer 172B are separated for each light emitting element. That is, the EL layer 172R, the EL layer 172G, and the EL layer 172B are all formed in an island shape. Since the EL layer 172R, the EL layer 172G, and the EL layer 172B are formed in an island shape without contacting each other, unintended light emission (also called crosstalk) caused by current flowing through two adjacent EL layers can be properly prevented. Therefore, the contrast ratio can be improved, and a display device with high display quality can be realized. Note that the EL layer 172R, the EL layer 172G, and the EL layer 172B may also be formed in a belt shape. That is, the EL layer 172R, EL layer 172G and EL layer 172B.

The ends of EL layer 172R, EL layer 172G, and EL layer 172B are located outside the end of conductive layer 171 , and EL layer 172R, EL layer 172G, and EL layer 172B may have a structure covering the end of conductive layer 171 . Note that the ends of the EL layer 172R, the EL layer 172G, and the EL layer 172B may be located inside the ends of the conductive layer 171 .

The EL layer 172R contains a light-emitting organic compound that emits light having an intensity at least in the red wavelength region. The EL layer 172G contains a light-emitting organic compound that emits light having an intensity at least in the green wavelength region. The EL layer 172B contains a light-emitting organic compound that emits light having an intensity at least in the blue wavelength region.

Each of the EL layer 172R, the EL layer 172G, and the EL layer 172B may include one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer, in addition to a layer (light-emitting layer) containing a light-emitting organic compound. . Note that for details of the structure and materials of the light emitting element included in the electronic device according to one embodiment of the present invention, refer to Embodiment 4.

As described above, the substrate 11a may have a structure that does not transmit visible light, and the substrate 13a may have a structure that transmits visible light. Therefore, by using a conductive film reflective to visible light as conductive layer 171 and a conductive film transparent to visible light as conductive layer 173 , light 34aR, light 34aG, and light 34aB are emitted to the substrate 13a side. Such a display device can be said to be a top-emission display device.

Furthermore, the protective layer 271 is provided between the light emitting elements 61 (the light emitting element 61R, the light emitting element 61G, and the light emitting element 61B) so as to cover the ends of the EL layer 172R, the EL layer 172G, and the EL layer 172B. The protective layer 271 has barrier properties against water, for example. Therefore, by providing the protective layer 271 , the intrusion of impurities (typically water or the like) into the ends of the EL layer 172R, the EL layer 172G, and the EL layer 172B can be suppressed. In addition, leakage current between adjacent light emitting elements 61 is reduced, so chroma and contrast are improved and power consumption is reduced.

The protective layer 271 may have, for example, a single-layer structure or a multilayer structure including at least an inorganic insulating film. Examples of the inorganic insulating film include oxide films or nitride films such as a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, an aluminum oxynitride film, and a hafnium oxide film. . In addition, semiconductor materials such as indium gallium oxide and indium gallium zinc oxide (IGZO) may be used as the protective layer 271 . In addition, the protective layer 271 may be formed by an atomic layer deposition (ALD: Atomic Layer Deposition) method, a chemical vapor deposition (CVD: Chemical Vapor Deposition) method, or a sputtering method. Note that a structure including an inorganic insulating film is exemplified as the protective layer 271 , but is not limited thereto. For example, the protective layer 271 may have a laminated structure of an inorganic insulating film and an organic insulating film.

When indium gallium zinc oxide is used for the protective layer 271, it can be processed by wet etching or dry etching. For example, when IGZO is used for the protective layer 271 , a chemical solution such as oxalic acid, phosphoric acid, or a mixed chemical solution (for example, a mixed chemical solution of phosphoric acid, acetic acid, nitric acid, and water (also called a mixed acid aluminum etchant)) can be used. The mixed acid aluminum etchant can be prepared at a volume ratio of phosphoric acid: acetic acid: nitric acid: water = 53.3: 6.7: 3.3: 36.7 and its vicinity.

In each of the light emitting element 61R, the light emitting element 61G, and the light emitting element 61B, the EL layer 172 (EL layer 172R, EL layer 172G, and EL layer 172B) and the protective layer 271 include a 270G and the sacrificial layer 270B) overlap each other. The sacrificial layer 270 is formed due to the manufacturing process of the display device described later. Note that sometimes the sacrificial layer 270 is not provided.

In this specification and the like, the sacrificial layer may also be referred to as a mask layer. In addition, the sacrificial film may also be called a mask film.

In the region between adjacent light-emitting elements 61 , an insulating layer 278 is arranged on the protective layer 271 . FIG. 9A shows an example in which the top surface of the insulating layer 278 has a convexly curved shape. Note that, for example, FIG. 9A shows cross-sections of the plurality of protective layers 271 and the plurality of insulating layers 278 , but the protective layers 271 and the insulating layers 278 are each formed as a continuous layer when viewed from above the display surface. That is to say, the display device may include, for example, a protective layer 271 and an insulating layer 278 . Note that the display device may also include a plurality of protective layers 271 separated from each other, and may also include a plurality of insulating layers 278 separated from each other.

By providing the insulating layer 278 having a convexly curved shape in a region between adjacent light emitting elements 61 , it is possible to fill the step in the region due to the EL layer 172 . Thereby, the coverage of the conductive layer 173 can be improved. Therefore, poor connection due to disconnection of the conductive layer 173 and resistance increase due to local thinning can be suppressed. Note that when the top surface of the insulating layer 278 is flat, disconnection and local thinning of the conductive layer 173 can be suppressed more appropriately. In addition, when the insulating layer 278 has a concave curved shape, it is also possible to suppress the disconnection and local thinning of the conductive layer 173 .

In this specification and the like, disconnection refers to a phenomenon in which layers, films, electrodes, etc. are separated due to the shape (for example, step) of the surface to be formed.

Examples of the insulating layer 278 include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, and PVB (polyvinyl butyral) resins. Resin and EVA (ethylene-vinyl acetate) resin, etc. In addition, a photoresist can also be used as the insulating layer 278 . The photoresist used as the insulating layer 278 may be either a positive type photoresist or a negative type photoresist.

A common layer 174 may be provided between the EL layer 172R, the EL layer 172G, the EL layer 172B, and the insulating layer 278 and the conductive layer 173 . The common layer 174 may include a region in contact with the EL layer 172R, a region in contact with the EL layer 172G, and a region in contact with the EL layer 172B. The common layer 174 is provided as a continuous layer commonly used among the light emitting element 61R, the light emitting element 61G, and the light emitting element 61B.

When the common layer 174 is provided in the display device, the conductive layer 173 used as the common electrode can be continuously deposited after the common layer 174 is deposited without etching or other processes in between. For example, the conductive layer 173 may be formed under vacuum without exposing the substrate 11a to the atmosphere after forming the common layer 174 under vacuum. In other words, the common layer 174 and the conductive layer 173 can always be formed under vacuum. This makes it possible to clean the bottom surface of the conductive layer 173 compared to the case where the common layer 174 is not provided in the display device.

One or more of a hole injection layer, a hole transport layer, a hole barrier layer, an electron barrier layer, an electron transport layer, and an electron injection layer can be used as the common layer 174 . For example, the common layer 174 may also be a carrier injection layer. In addition, the common layer 174 can also be said to be a part of the EL layer 172 . Note that the common layer 174 may also not be provided, and in this case, the manufacturing process of the display device may be simplified. When the common layer 174 is provided, a layer having the same function as the common layer 174 may not be provided among the layers included in the EL layer 172 . For example, when the common layer 174 includes an electron injection layer, the EL layer 172 may not include an electron injection layer. In addition, for example, when the common layer 174 includes a hole injection layer, the EL layer 172 may not include a hole injection layer. Note that the EL layer 172 and the common layer 174 may also be collectively referred to as an EL layer. That is, only the island-shaped layer may be referred to as an "EL layer", or both of the island-shaped layer and the common layer may be referred to as an "EL layer".

In this specification and the like, holes or electrons are sometimes referred to as "carriers". Specifically, the hole injection layer or electron injection layer, hole transport layer or electron transport layer, and hole barrier layer or electron barrier layer are sometimes referred to as "carrier injection layer", "carrier transport layer" and "Carrier barrier layer". Note that depending on the cross-sectional shape or characteristics, the above-mentioned carrier injection layer, carrier transport layer, and carrier barrier layer may not be clearly distinguished in some cases. In addition, one layer may function as two or three of the carrier injection layer, carrier transport layer, and carrier barrier layer.

A protective layer 273 is provided on the conductive layer 173 so as to cover the light emitting element 61R, the light emitting element 61G, and the light emitting element 61B. The protective layer 273 has a function of preventing impurities such as water from diffusing from above to each light emitting element. The protective layer 273 can use the same material as that which can be used for the protective layer 271 . In addition, the protective layer 273 can be formed by, for example, an ALD method, a CVD method, or a sputtering method.

The substrate 13 a is bonded on the protective layer 273 with the adhesive layer 122 . The adhesive layer 122 can use the same material as that which can be used for the adhesive layer 14 shown in FIG. 3A. In addition, when a hollow sealing structure is used for sealing the light emitting element, the adhesive layer 122 may also be filled with an inert gas (nitrogen or argon, etc.). Note that the layer 363 to the adhesive layer 122 can be, for example, the layer 12a shown in FIG. 2A.

By making the light-emitting element 61 have an optical microcavity resonator (microcavity) structure, the color purity of the light-emitting color can be improved. When the light-emitting element 61 has a microcavity structure, the product (optical distance) of the distance d between the conductive layer 171 and the conductive layer 173 and the refractive index n of the EL layer 172 is set to m times ( m is an integer greater than or equal to 1). The distance d can be obtained from Mathematical Expression 1.

d=m×λ/(2×n) ・・・ Mathematical formula 1.

According to Mathematical Formula 1, the distance d is determined based on the wavelength of emitted light (light emission color) in the light emitting element 61 having a microcavity structure. The distance d corresponds to the thickness of the EL layer 172 . Therefore, the EL layer 172G may be provided thicker than the EL layer 172B, and the EL layer 172R may be provided thicker than the EL layer 172G.

Note that, strictly speaking, the distance d is from the reflective area in the conductive layer 171 used as a reflective electrode to the conductive layer used as an electrode (semi-transmissive-semi-reflective electrode) having transmittance and reflectivity of emitted light 173 in the reflective zone distance. For example, when the conductive layer 171 is a laminate of silver and transparent conductive film ITO (Indium Tin Oxide) and the ITO is on the side of the EL layer 172, the distance d corresponding to the light emission color can be set by adjusting the thickness of the ITO. That is, even if the thicknesses of the EL layer 172R, the EL layer 172G, and the EL layer 172B are the same, by changing the thickness of the ITO, the distance d suitable for the light emission color can be obtained.

However, sometimes it is difficult to strictly determine the positions of the reflective regions in the conductive layer 171 and the conductive layer 173 . At this time, it is assumed that the microcavity effect can be sufficiently obtained by assuming an arbitrary position in the conductive layer 171 and the conductive layer 173 as a reflection region.

In order to improve the light extraction efficiency of the microcavity structure, it is preferable to set the optical distance from the conductive layer 171 used as the reflective electrode to the light-emitting layer as an odd multiple of λ/4. In order to realize this optical distance, it is preferable to adjust the thickness of each layer constituting the light emitting element 61 .

In addition, when emitting light from the side of the conductive layer 173 , the reflectivity of the conductive layer 173 is preferably higher than the transmittance thereof. The light transmittance of the conductive layer 173 is preferably not less than 2% and not more than 50%, more preferably not less than 2% and not more than 30%, further preferably not less than 2% and not more than 10%. By reducing the transmittance of the conductive layer 173 (increasing its reflectivity), the microcavity effect can be enhanced.

Fig. 9B is a modified example of the structure shown in Fig. 9A. FIG. 9B shows an example in which, for example, a light-emitting element 61W emitting white light is provided on the layer 363 instead of the light-emitting element 61R, the light-emitting element 61G, and the light-emitting element 61B. The light emitting element 61W includes, for example, an EL layer 172W that emits white light as the EL layer 172 . As the EL layer 172W, for example, a structure in which two or more light-emitting layers selected so that the respective light-emitting colors have a complementary color relation are stacked can be employed. In addition, a stacked EL layer in which a charge generation layer is sandwiched between light emitting layers may also be used as the EL layer 172W.

Here, the EL layer 172W is separated for each light emitting element 61W. Accordingly, it is possible to prevent unintentional light emission caused by current flowing through the EL layer 172W in two adjacent light emitting elements 61W. In particular, when a charge generation layer is provided between two light-emitting layers as the EL layer 172W, there is a problem that the higher the resolution, that is, the smaller the distance between adjacent pixels, the more obvious the influence of crosstalk and the lower the contrast. . Therefore, by adopting such a structure, a display device having both high definition and high contrast can be realized. Note that the EL layer 172W may also be a continuous layer without being separated for each light emitting element 61W.

In addition, FIG. 9B shows an example in which the insulating layer 276 is provided on the protective layer 273 and the color layer 183R, the color layer 183G, and the color layer 183B are provided on the insulating layer 276 . Specifically, a color layer 183R that transmits red light is provided at a position overlapping the light emitting element 61W on the left side, a color layer 183G that transmits green light is provided at a position overlapping the light emitting element 61W in the center, and a color layer 183G that transmits green light is provided at a position overlapping the light emitting element 61W on the right side. A color layer 183B that transmits blue light is provided at the position 61W. By providing the color layer 183R, the color layer 183G, and the color layer 183B, for example, all the light-emitting elements provided in the display device are light-emitting elements that emit white light, and the display device can also display color images.

Adjacent color layers 183 (color layer 183R, color layer 183G, and color layer 183B) include regions overlapping with each other. For example, in the cross section shown in FIG. 9B , one end of the colored layer 183G overlaps the colored layer 183R, and the other end of the colored layer 183G overlaps the colored layer 183B. Therefore, for example, light emitted from the light emitting element 61W provided at a position overlapping the colored layer 183G can be prevented from entering the colored layer 183R or the colored layer 183B and being emitted from the colored layer 183R or the colored layer 183B. Therefore, a display device with high display quality can be realized.

The insulating layer 276 is used as a planarization layer. For the insulating layer 276, for example, an organic material can be used. For example, acrylic resins, polyimide resins, epoxy resins, imide resins, polyamide resins, polyimideamide resins, silicone resins, siloxane resins, benzocyclobutene resins, A phenolic resin or a precursor of these resins is used as the insulating layer 276 .

By disposing the insulating layer 276 on the protection layer 273, the color layer 183 can be disposed on a flat surface. Therefore, the colored layer 183 can be easily formed. Note that the adhesive layer 122 is provided on the color layer 183 , and the substrate 13 a is bonded by the adhesive layer 122 .

The light emitting element 61W may have a microcavity structure similarly to the light emitting element 61R, the light emitting element 61G, and the light emitting element 61B. Thus, for example, the light-emitting element 61W overlapping with the color layer 183R can emit enhanced red light, the light-emitting element 61W overlapping with the color layer 183G can emit enhanced green light, and for example, the light-emitting element 61W overlapping with the color layer 183B can emit enhanced blue light. colored light. Therefore, since the light emitting element 61W has a microcavity structure, the color purity of the light 34aR, the light 34aG, and the light 34aB can be improved.

FIG. 9C is a modified example of the structure shown in FIG. 9A , and also shows an example in which an insulating layer 276 is provided on the protective layer 273 and a microlens array 277 is provided on the insulating layer 276 . Note that an adhesive layer 122 is disposed on the microlens array 277 , and the substrate 13 a is bonded by the adhesive layer 122 .

When the refractive index of the adhesive layer 122 is lower than that of the microlens array 277 , the microlens array 277 may collect light emitted from the light emitting element 61R, the light emitting element 61G, and the light emitting element 61B. By concentrating the light emitted from the light emitting element 61R, the light emitting element 61G, and the light emitting element 61B, especially when the user looks at the display surface of the display device from the front, it is preferable to see a bright image.

Note that a microlens array 277 may also be provided in the structure shown in FIG. 9B. For example, an insulating layer serving as a planarization layer may be provided on the color layer 183R, the color layer 183G, and the color layer 183B, and the microlens array 277 may be provided on the insulating layer. At this time, the adhesive layer 122 is provided on the microlens array 277 , and the substrate 13 a is bonded by the adhesive layer 122 . In addition, the color layer 183R, the color layer 183G, and the color layer 183B may be provided in the structure shown in FIG. 9C. For example, an insulating layer serving as a planarization layer may be provided on the microlens array 277 and the color layer 183R, the color layer 183G, and the color layer 183B may be provided on the insulating layer. At this time, the adhesive layer 122 is provided on the color layer 183 , and the substrate 13 a is bonded by the adhesive layer 122 .

10A is a modified example of the structure shown in FIG. 9A , and also shows an example in which light emitting elements 63R, 63G, and 63B are provided on layer 363 instead of light emitting elements 61R, 61G, and 61B. In addition, FIG. 10A shows an example in which a substrate 11b and a substrate 13b are provided instead of the substrate 11a and the substrate 13a. Note that in the example shown in FIG. 10A , the assembly from layer 363 to adhesive layer 122 may be, for example, layer 12b shown in FIG. 2A .

The light emitting element 63R can emit light 34bR having intensity in the red wavelength region. Light emitting element 63G can emit light 34bG having intensity in the green wavelength region. Light emitting element 63B can have light 34bB with intensity in the blue wavelength region.

As described above, the substrate 11b and the substrate 13b have a structure through which visible light passes. Therefore, by using a conductive film reflective to visible light for the conductive layer 171 and a conductive film transparent to visible light for the conductive layer 173 , light 34bR, light 34bG, and light 34bB are emitted to the substrate 13b side. Such a display device can be said to be a top emission type display device. In addition, since the conductive layer 173 uses a conductive film reflective to visible light and the conductive layer 171 uses a conductive film transparent to visible light, light 34bR, light 34bG, and light 34bB are emitted to the substrate 11b side. Such a display device can be said to be a bottom-emission display device.

The light emitting element 63R includes the conductive layer 171 on the layer 363 , the EL layer 172R on the conductive layer 171 , and the conductive layer 173 on the EL layer 172R. The light emitting element 63G includes the conductive layer 171 on the layer 363 , the EL layer 172G on the conductive layer 171 , and the conductive layer 173 on the EL layer 172G. Light emitting element 63B includes conductive layer 171 on layer 363 , EL layer 172B on conductive layer 171 , and conductive layer 173 on EL layer 172B.

FIG. 10A shows an example in which an insulating layer 272 is provided covering an end portion of a conductive layer 171 used as a pixel electrode. By providing the insulating layer 272 , it is possible to prevent the conductive layers 171 included in the adjacent light emitting elements 63 (the light emitting element 63R, the light emitting element 63G, and the light emitting element 63B) from being inadvertently electrically short-circuited and erroneously emitting light. Therefore, a highly reliable display device can be provided.

In light emitting element 63R, light emitting element 63G, and light emitting element 63B, EL layer 172R, EL layer 172G, and EL layer 172B respectively include a region in contact with the top surface of conductive layer 171 and a region in contact with the surface of insulating layer 272 . In addition, the ends of the EL layer 172R, the EL layer 172G, and the EL layer 172B are located on the insulating layer 272 .

The end of the insulating layer 272 is preferably tapered. In addition, in the structure shown in FIG. 10A , the protective layer 271 , the sacrificial layer 270 , the insulating layer 278 and the common layer 174 are not provided. Furthermore, since the light emitting element 63 has a microcavity structure similarly to the light emitting element 61, the color purity of the emitted light color can be improved.

Note that in this specification and the like, the tapered shape means a shape in which at least a part of the side surface of the module is provided obliquely with respect to the substrate surface or the surface to be formed. For example, it is preferable to have a region where the angle (also referred to as taper angle) formed by the inclined side surface and the substrate surface or the surface to be formed is smaller than 90°. Here, the side surface of the module, the substrate surface, and the surface to be formed do not necessarily need to be completely flat, and may be substantially flat with slight curvature or substantially flat with fine unevenness.

For the insulating layer 272, for example, an organic material or an inorganic material can be used. Examples of organic materials that can be used for the insulating layer 272 include acrylic resins, epoxy resins, polyimide resins, polyamide resins, polyimideamide resins, polysiloxane resins, and benzocyclidine resins. Vinyl resins and phenolic resins, etc. Examples of inorganic materials that can be used for the insulating layer 272 include silicon oxide, aluminum oxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, tantalum oxide, silicon nitride, and aluminum nitride. , silicon oxynitride, aluminum oxynitride, silicon oxynitride and aluminum oxynitride.

10B is a modified example of the structure shown in FIG. 10A , and also shows an example in which, for example, a light emitting element 63W emitting white light is provided on layer 363 instead of light emitting element 63R, light emitting element 63G, and light emitting element 63B. The light emitting element 63W includes an EL layer 172W as the EL layer 172 . Note that the light-emitting element 63W can improve the color purity of the light 34bR, the light 34bG, and the light 34bB by having the same microcavity structure as the light-emitting element 61W.

FIG. 10B shows an example in which a color layer 183R, a color layer 183G, and a color layer 183B are provided on the surface of the substrate 13b on the substrate 11b side. 10B shows an example in which the light shielding layer 117 is provided on the surface of the substrate 13b on the substrate 11b side where the colored layer 183R, the colored layer 183G, and the colored layer 183B are not provided. Furthermore, FIG. 10B shows an example in which the ends of the colored layer 183R, the colored layer 183G, and the colored layer 183B overlap with the light shielding layer 117 . Note that in the example shown in FIG. 10B , the components from the layer 363 to the colored layer 183R, the colored layer 183G, the colored layer 183B and the light shielding layer 117 may be, for example, the layer 12b shown in FIG. 2A . Note that when the display device shown in FIG. 10B is a bottom emission type display device, the color layer 183R, the color layer 183G, the color layer 183B, and the light shielding layer 117 may also be provided in the layer 363 .

By providing the light shielding layer 117, the light emitted from the light emitting element 63W can be prevented from being emitted from the substrate 13b without passing through the desired color layer 183. Specifically, light emitted from the light emitting element 63W overlapping the color layer 183R can be prevented from being emitted from the substrate 13b without passing through the color layer 183R, and light emitted from the light emitting element 63W overlapping the color layer 183G can be prevented from being emitted from the substrate 13b without passing through the color layer 183G. The light emitted from the substrate 13b and emitted from the light emitting element 63W overlapping the colored layer 183B is emitted from the substrate 13b without passing through the colored layer 183B. Therefore, the display device can display high-quality images.

The light shielding layer 117 may also be provided, for example, in the display device shown in FIG. 10A . In this case, light emitted from the light emitting element 63R, the light emitting element 63G, and the light emitting element 63B can be suppressed from being reflected by the substrate 13 b and diffusing inside the display device, for example. Thus, the display device can display high-quality images. On the other hand, by not providing the light-shielding layer 117, the light extraction efficiency of the light emitted from the light-emitting element 63R, the light-emitting element 63G, and the light-emitting element 63B can be improved. Similarly, for example, the light-shielding layer 117 may also be provided in the display device shown in FIG. 9A or FIG. 9C .

In the example shown in FIG. 10B , the adhesive layer 122 is provided between the protective layer 273 and the colored layer 183R, 183G, 183B, and light shielding layer 117 . As a result, the color layer 183R, the color layer 183G, the color layer 183B, and the light shielding layer 117 provided on the substrate 13 b are bonded to the protective layer 273 .

By disposing the colored layer 183R, the colored layer 183G, the colored layer 183B, and the light-shielding layer 117 on the substrate 13b and bonding them to the protective layer 273, the durability of the colored layer 183R, the colored layer 183G, the colored layer 183B, and the light-shielding layer 117 can be improved. Elasticity of manufacturing conditions. For example, heat treatment may be performed at a temperature higher than the heat-resistant temperature of the EL layer 172W. On the other hand, when the colored layer 183R, the colored layer 183G, the colored layer 183B, the light-shielding layer 117 and the protective layer 273 are bonded together, misalignment may occur in some cases. Therefore, when the pixel is so fine that the misalignment cannot be ignored, for example, as shown in FIG. 9B , it is preferable to form the color layer 183R, the color layer 183G, and the color layer 183B on the protective layer 273, and then bond the substrate 13b.

FIG. 10B shows an example in which the EL layer 172W is a continuous layer without being separated for each light emitting element 63W. Since the EL layer 172W is a continuous layer, the manufacturing process of the display device can be simplified. Note that the EL layer 172W may also be separated for each light emitting element 63W.

FIG. 10C is a modified example of the structure shown in FIG. 10A , and also shows an example in which an insulating layer 276 is provided on a protective layer 273 and a microlens array 277 is provided on the insulating layer 276 . Note that the microlens array 277 may also be provided in the structure shown in FIG. 10B. For example, an insulating layer 276 may be disposed on the protective layer 273 and a microlens array 277 may be disposed on the insulating layer 276 . At this time, the adhesive layer 122 is provided between the microlens array 277 and the color layers 183R, 183G, 183B and the light shielding layer 117 . Note that in the example shown in FIG. 10C , the assembly from layer 363 to adhesive layer 122 may be, for example, layer 12b shown in FIG. 2A .

The display device having the structures shown in FIGS. 9A , 9B, and 9C can improve sharpness without reducing contrast compared to the display device having the structures shown in FIGS. 10A , 10B, and 10C. For example, the distance between adjacent light emitting elements 61 can be shortened. Specifically, the distance between the light emitting elements 61 is 1 μm or less, preferably 500 nm or less, more preferably 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less or 10 nm or less. In other words, a region where the distance between the end of one EL layer 172 and the end of the other EL layer 172 of two adjacent EL layers 172 is 1 μm or less, preferably 0.5 μm (500 nm) The region of 100 nm or less is more preferably set at 100 nm or less.

On the other hand, the display device having the structure shown in FIGS. 10A , 10B, and 10C can be manufactured with a simpler method than the display device having the structure shown in FIGS. 9A , 9B, and 9C. Therefore, a display device having the structures shown in FIGS. 10A , 10B, and 10C can be manufactured at low cost.

As described above, the resolution of the display device 41a including the display portion 37a is higher than that of the display device 41b including the display portion 37b. Therefore, as described above, the structures shown in FIGS. 9A , 9B, and 9C can be applied to the display device 41a. Specifically, the light emitting element 61 can be suitably used as the light emitting element included in the pixel 27a provided in the display portion 37a. On the other hand, as described above, a display device having the structures shown in FIGS. 10A , 10B, and 10C can be manufactured at low cost. Therefore, when the display device 41b has the structures shown in FIGS. 10A , 10B, and 10C, the electronic device 10 can be a low-cost electronic device, which is preferable. Specifically, the light-emitting element 63 can be applied to the light-emitting element included in the pixel 27 b provided in the display portion 37 b.

Note that, as described above, the display device 41b may also have the structures shown in FIGS. 9A , 9B, and 9C. In this case, for example, the substrate 11a and the substrate 13a are replaced with the substrate 11b and the substrate 13b. In addition, as described above, the display device 41a may have the configuration shown in FIGS. 10A , 10B, and 10C. In this case, for example, the substrate 11 a and the substrate 13 a are used instead of the substrate 11 b and the substrate 13 b.

Hereinafter, an example of a method of manufacturing the display device having the structure shown in FIG. 9A will be described with reference to FIGS. 11A to 13D .

First, as shown in FIG. 11A, a layer 363 is formed on the substrate 11a. Specifically, for example, transistors are formed on the substrate 11a, and an insulating layer is formed to cover the transistors. Next, as shown in FIG. 11A , a conductive layer 171 is formed on layer 363 . For example, the conductive layer 171 can be formed by forming a film to be the conductive layer 171 by a sputtering method or a vacuum evaporation method, and processing the film using, for example, photolithography and etching. Note that, when a film to be the conductive layer 171 is processed by, for example, etching, a recess is sometimes formed in the layer 363 . Specifically, a recess may be formed in the insulating layer located on the outermost surface of the layer 363 in a region that does not overlap the conductive layer 171 .

Next, as shown in FIG. 11B , an EL film 172Rf which will later become an EL layer 172R is formed on the conductive layer 171 and on the layer 363 . The EL film 172Rf can be formed by, for example, a vapor deposition method, specifically, a vacuum vapor deposition method. In addition, the EL film 172Rf can also be formed by a method such as a transfer method, a printing method, an inkjet method, or a coating method.

Next, as shown in FIG. 11B , a sacrificial film 270Rf which will later become a sacrificial layer 270R and a sacrificial film 279Rf which will later become a sacrificial layer 279R are sequentially formed on the EL film 172Rf.

Note that an example in which the sacrificial film is formed from a two-layer structure of the sacrificial film 270Rf and the sacrificial film 279Rf is shown below, but the sacrificial film may have a single-layer structure or a laminated structure of three or more layers.

By providing the sacrificial film on the EL film 172Rf, damage to the EL film 172Rf during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting element can be improved.

As the mask film 270Rf, a film having high resistance to the processing conditions of the EL film 172Rf, specifically, a film having a high etching selectivity ratio to the EL film 172Rf is used. As the sacrificial film 279Rf, a film having a large etching selectivity ratio to the sacrificial film 270Rf is used.

In addition, the mask film 270Rf and the mask film 279Rf are formed at a temperature lower than the heat-resistant temperature of the EL film 172Rf. The substrate temperature for forming the mask film 270Rf and the mask film 279Rf is typically 200°C or lower, preferably 150°C or lower, more preferably 120°C or lower, further preferably 100°C or lower, and still more preferably 80°C or lower. below ℃.

As the sacrificial film 270Rf and the sacrificial film 279Rf, it is preferable to use a film that can be removed by wet etching. By using the wet etching method, damage to the EL film 172Rf during the processing of the sacrificial film 270Rf and the sacrificial film 279Rf can be reduced compared to the case of using the dry etching method.

The sacrificial film 270Rf and the sacrificial film 279Rf can be formed by, for example, sputtering, ALD (thermal ALD, PEALD, etc.), CVD, or vacuum deposition.

In addition, the sacrificial film 270Rf formed so as to be in contact with the EL film 172Rf is preferably formed by a formation method that causes less damage to the EL film 172Rf than the sacrificial film 279Rf. For example, it is more preferable to form the sacrificial film 270Rf using the ALD method or the vacuum evaporation method than the sputtering method.

As the sacrificial film 270Rf and the sacrificial film 279Rf, for example, one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, an inorganic insulating film, and the like can be used.

As the sacrificial film 270Rf and the sacrificial film 279Rf, for example, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum can be used or include Alloy material of the metal material. In particular, it is preferable to use a low-melting-point material such as aluminum or silver. It is preferable to use a metal material capable of shielding ultraviolet rays for one or both of the sacrificial film 270Rf and the sacrificial film 279Rf, since irradiation of ultraviolet rays to the EL film 172Rf can be suppressed and deterioration of the EL film 172Rf can be suppressed.

In addition, as the sacrificial film 270Rf and the sacrificial film 279Rf, metal oxides such as In-Ga-Zn oxide, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide ), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide) or Indium tin oxide containing silicon, etc.

Note that the element M (M is aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and one or more of magnesium) in place of the aforementioned gallium. In particular, M is preferably one or more selected from gallium, aluminum and yttrium.

In addition, as the sacrificial film, a film containing a material having light-shielding properties, especially ultraviolet light-shielding properties, can be used. For example, an ultraviolet reflective film or an ultraviolet absorbing film can be used. As a material with light-shielding properties, various materials such as metals, insulators, semiconductors, and semi-metals with ultraviolet light-shielding properties can be used. Because a part or all of the sacrificial film will be removed in the subsequent process, the mask film is preferably able to The film processed by etching is particularly preferably a film with good processability.

By using a film of an ultraviolet light-shielding material as the sacrificial film, it is possible to suppress, for example, ultraviolet rays from being irradiated to the EL layer during an exposure process. By suppressing damage to the EL layer by ultraviolet rays, the reliability of the light-emitting device can be improved.

Note that even when a film containing a material having ultraviolet light shielding properties is used as a material for the protective film 271f described later, the same effect is exhibited.

In addition, as the sacrificial film, a material that is very suitable for a semiconductor manufacturing process can be used. As a material that is very suitable for a semiconductor manufacturing process, it is preferable to use a semiconductor material such as silicon or germanium. In addition, oxides or nitrides of the above-mentioned semiconductor materials may be used. In addition, non-metallic materials such as carbon or their compounds can be used. In addition, metals such as titanium, tantalum, tungsten, chromium, and aluminum, or alloys containing one or more of them can be used. In addition, oxides containing the above-mentioned metals such as titanium oxide or chromium oxide, or nitrides such as titanium nitride, chromium nitride, or tantalum nitride can be used.

In addition, various inorganic insulating films that can be used for the protective layer 273 can be used as the sacrificial film 270Rf and the sacrificial film 279Rf. In particular, it is preferable that the adhesion of the oxide insulating film to the EL film 172Rf is higher than the adhesion of the nitride insulating film to the EL film 172Rf. For example, inorganic insulating materials such as aluminum oxide, hafnium oxide, or silicon oxide can be used for the sacrificial film 270Rf and the sacrificial film 279Rf, respectively. As the sacrificial film 270Rf and the sacrificial film 279Rf, for example, an aluminum oxide film can be formed by the ALD method. By using the ALD method, damage to the substrate (especially the EL layer) can be reduced, which is preferable.

For example, as the sacrificial film 270Rf, an inorganic insulating film (for example, an aluminum oxide film) formed by the ALD method can be used, and as the sacrificial film 279Rf, an inorganic film (for example, an In-Ga-Zn oxide film) formed by a sputtering method can be used. , aluminum film or tungsten film).

In addition, the same inorganic insulating film can be used for both the sacrificial film 270Rf and the protective layer 271 formed later. For example, an aluminum oxide film formed by the ALD method can be used as both the sacrificial film 270Rf and the protective layer 271 . Here, the sacrificial film 270Rf and the protective layer 271 may use the same deposition conditions or different deposition conditions. For example, by depositing the sacrificial film 270Rf under the same conditions as the protective layer 271, the sacrificial film 270Rf can be formed as an insulating layer having high barrier properties to at least one of water and oxygen. On the other hand, since most or all of the sacrificial film 270Rf is removed in a later process, it is preferable to be easily processed. Therefore, the sacrificial film 270Rf is preferably deposited under the condition that the substrate temperature during deposition is lower than that of the protective layer 271 .

An organic material may also be used as one or both of the sacrificial film 270Rf and the sacrificial film 279Rf. For example, a material that is soluble in a solvent that is chemically stable at least to the uppermost film of the EL film 172Rf may be used as the organic material. In particular, a material soluble in water or alcohol may be applied to one or both of the sacrificial film 270Rf and the sacrificial film 279Rf. When depositing the above-mentioned material, it is preferable to apply the material by the above-mentioned wet deposition method in a state where the material is dissolved in a solvent such as water or alcohol, and then perform heat treatment for evaporating the solvent. At this time, it is preferable to perform heat treatment under a reduced pressure atmosphere, whereby the solvent can be removed at a low temperature and in a short time, thereby reducing thermal damage to the EL film 172Rf.

For the sacrificial film 270Rf and the sacrificial film 279Rf, polyvinyl alcohol (PVA), polyvinyl butyral, polyvinyl pyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, soluble in Alcohol-based polyamide resins or organic resins such as fluorine resins such as perfluoropolymers.

For example, as the sacrificial film 270Rf, an organic film (eg, a PVA film) formed by vapor deposition and any of the wet deposition methods described above can be used, and as the sacrificial film 279Rf, an inorganic film (eg, PVA film) formed by a sputtering method can be used. , silicon nitride film).

Note that in the display device according to one embodiment of the present invention, a part of the sacrificial film may remain as a sacrificial layer.

Next, as shown in FIG. 11B, a photoresist mask 180R is formed on the sacrificial film 279Rf. The photoresist mask 180R can be formed by coating a photosensitive material (photoresist), exposing and developing it. The photoresist mask 180R can also be fabricated using positive photoresist material or negative photoresist material.

Next, as shown in FIGS. 11B and 11C , a part of the sacrificial film 279Rf is removed using the photoresist mask 180R, thereby forming the sacrificial layer 279R. Next, the photoresist mask 180R is removed.

Next, as shown in FIGS. 11C and 11D , a part of the sacrificial film 270Rf is removed by using the sacrificial layer 279R as a mask (also called a hard mask) to form the sacrificial layer 270R.

The sacrificial film 270Rf and the sacrificial film 279Rf can be processed by wet etching or dry etching, respectively.

By using the wet etching method, damage to the EL film 172Rf during the processing of the sacrificial film 270Rf and the sacrificial film 279Rf can be reduced compared to the case of using the dry etching method. When wet etching is used, for example, it is preferable to use a developer solution, a tetramethylammonium hydroxide (TMAH) aqueous solution, dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixed solution containing two or more of the above. In addition, when using the wet etching method, a mixed acid chemical solution containing water, phosphoric acid, dilute hydrofluoric acid, and nitric acid may also be used. Note that the chemical solution used for the wet etching process may be alkaline or acidic. On the other hand, since the anisotropy of the dry etching method is higher than that of the wet etching method, by using the dry etching method, microfabrication can be performed compared with the case of using the wet etching method.

Since the EL film 172Rf is not exposed during the processing of the sacrificial film 279Rf, the selection range of processing methods is wider than that of the processing of the sacrificial film 270Rf. Specifically, the use of an oxygen-containing gas as an etching gas in the processing of the sacrificial film 279Rf can further suppress the deterioration of the EL film 172Rf.

The photoresist mask 180R may be removed, for example, by ashing using oxygen plasma. Alternatively, oxygen gas and CF ₄ , C ₄ F ₈ , SF ₆ , CHF ₃ , Cl ₂ , H ₂ O, BCl ₃ or group 18 elements may also be used. As the Group 18 element, for example, He can be used. Alternatively, the photoresist mask 180R may also be removed by wet etching. At this time, the sacrificial film 279Rf is located on the outermost surface and the EL film 172Rf is not exposed, so that the EL film 172Rf can be prevented from being damaged during the removal process of the photoresist mask 180R. In addition, the selection range of the removal method of the photoresist mask 180R can be expanded.

Next, as shown in FIGS. 11C and 11D , the EL film 172Rf is processed to form the EL layer 172R. For example, the EL layer 172R is formed by removing a part of the EL film 172Rf by etching, for example, using the sacrificial layer 279R and the sacrificial layer 270R as a mask. Note that although not shown in FIG. 11D , recesses are sometimes formed in regions of the layer 363 that do not overlap the EL layer 172R due to the etching process performed on the EL film 172Rf.

Next, as shown in FIG. 12A , an EL film 172Gf which will later become an EL layer 172G is formed on the conductive layer 171 , on the sacrificial layer 279R, and on the layer 363 . The EL film 172Gf can be formed in the same method as can be used when forming the EL film 172Rf.

Next, as shown in FIG. 12A, a sacrificial film 270Gf which will later become a sacrificial layer 270G and a sacrificial film 279Gf which will later become a sacrificial layer 279G are sequentially formed on the EL film 172Gf. Next, a photoresist mask 180G is formed. The material and formation method of the sacrificial film 270Gf and the sacrificial film 279Gf are the same as the conditions applicable to the sacrificial film 270Rf and the sacrificial film 279Rf. The material and forming method of the photoresist mask 180G are the same as those applicable to the photoresist mask 180R.

Next, as shown in FIGS. 12A and 12B , a part of the sacrificial film 279Gf is removed using a photoresist mask 180G to form a sacrificial layer 279G. Next, the photoresist mask 180G is removed. The formation of the sacrificial layer 279G and the removal of the photoresist mask 180G can use the same methods as those used for the formation of the sacrificial layer 279R and the removal of the photoresist mask 180R, respectively.

Next, as shown in FIGS. 12B and 12C , a part of the sacrificial film 270Gf is removed using the sacrificial layer 279G as a mask to form the sacrificial layer 270G. Next, the EL film 172Gf is processed to form the EL layer 172G. For example, the EL layer 172G is formed by removing a part of the EL film 172Gf by etching, for example, using the sacrificial layer 279G and the sacrificial layer 270G as a mask. The formation of the sacrificial layer 270G and the formation of the EL layer 172G can use the same methods as those used for the formation of the sacrificial layer 270R and the formation of the EL layer 172R, respectively.

Next, as shown in FIG. 12D , an EL film 172Bf which will later become an EL layer 172B is formed on the conductive layer 171 , on the sacrificial layer 279R, on the sacrificial layer 279G, and on the layer 363 . The EL film 172Bf can be formed using the same method as that used for the formation of the EL film 172Rf.

Next, as shown in FIG. 12D, a sacrificial film 270Bf which will later become a sacrificial layer 270B and a sacrificial film 279Bf which will later become a sacrificial layer 279B are sequentially formed on the EL film 172Bf. Next, a photoresist mask 180B is formed. The material and formation method of the sacrificial film 270Bf and the sacrificial film 279Bf are the same as the conditions applicable to the sacrificial film 270Rf and the sacrificial film 279Rf. The material and forming method of the photoresist mask 180B are the same as those applicable to the photoresist mask 180R.

Next, as shown in FIGS. 12D and 12E , a part of the sacrificial film 279Bf is removed using a photoresist mask 180B to form a sacrificial layer 279B. Next, the photoresist mask 180B is removed. The formation of the sacrificial layer 279B and the removal of the photoresist mask 180B can use the same methods as those used for the formation of the sacrificial layer 279R and the removal of the photoresist mask 180R, respectively.

Next, as shown in FIGS. 12E and 12F , a part of the sacrificial film 270Bf is removed using the sacrificial layer 279B as a mask to form the sacrificial layer 270B. Next, the EL film 172Bf is processed to form the EL layer 172B. For example, the EL layer 172B is formed by removing a part of the EL film 172Bf by etching, for example, using the sacrificial layer 279B and the sacrificial layer 270B as a mask. The formation of the sacrificial layer 270B and the formation of the EL layer 172B can use the same methods as those used for the formation of the sacrificial layer 270R and the formation of the EL layer 172R, respectively.

Next, as shown in FIG. 12F and FIG. 13A , preferably, the sacrificial layer 279R, the sacrificial layer 279G and the sacrificial layer 279B are removed. Sometimes the sacrificial layer 270R, the sacrificial layer 270G, the sacrificial layer 270B, the sacrificial layer 279R, the sacrificial layer 279G, and the sacrificial layer 279B remain in the display device according to subsequent processes. By removing the sacrificial layer 279R, the sacrificial layer 279G, and the sacrificial layer 279B at this time, it is possible to prevent the sacrificial layer 279R, the sacrificial layer 279G, and the sacrificial layer 279B from remaining in the display device. For example, when a conductive material is used as the sacrificial layer 279R, the sacrificial layer 279G, and the sacrificial layer 279B, the sacrificial layer 279R, the sacrificial layer 279G, and the sacrificial layer 279B are removed in advance, so that the remaining sacrificial layer 279R, the sacrificial layer 279G, and the Occurrence of leakage current and capacitance formation caused by 279B.

Note that in this embodiment mode, the case of removing the sacrificial layer 279R, the sacrificial layer 279G, and the sacrificial layer 279B is described as an example, but the sacrificial layer 279R, the sacrificial layer 279G, and the sacrificial layer 279B may not be removed.

The removal process of the sacrificial layer can use the same method as the processing process of the sacrificial layer. In particular, by using the wet etching method, damage to the EL layer 172R, the EL layer 172G, and the EL layer 172B can be reduced when removing the sacrificial layer, compared to the case of using the dry etching method.

Alternatively, the sacrificial layer may be removed by dissolving it in a solvent such as water or alcohol. Examples of the alcohol include ethanol, methanol, isopropanol (IPA), glycerin, and the like.

Next, as shown in FIG. 13B , a protective film 271f which will later become the protective layer 271 is formed to cover the EL layer 172R, the EL layer 172G, the EL layer 172B, the sacrificial layer 270R, the sacrificial layer 270G, and the sacrificial layer 270B. The protective film 271f can be formed by, for example, an ALD method, a sputtering method, a CVD method, or a PECVD method, and is preferably formed by an ALD method that reduces deposition damage to the EL layer 172 and has high coverage.

Next, as shown in FIG. 13B, an insulating film 278f which will later become an insulating layer 278 is formed on the protective film 271f. The insulating film 278f is preferably formed using a photosensitive material by spin coating, for example.

Next, as shown in FIGS. 13B and 13C , the insulating film 278 f is processed to form an insulating layer 278 between the EL layers 172 . Specifically, the insulating layer 278 is formed, for example, to overlap a part of the top surface of each of the two EL layers 172 and to include a region between the side surfaces of the two EL layers 172 .

When using a photosensitive material such as a photoresist as the insulating film 278f, the insulating layer 278 can be formed by exposing and developing the insulating film 278f. When a positive-type photosensitive material is used as the insulating film 278f, in the exposure process, ultraviolet rays or visible rays are irradiated to regions where the insulating layer 278 is not formed. When a negative photosensitive material is used as the insulating film 278f, in the exposure process, ultraviolet rays or visible rays are irradiated to the region where the insulating layer 278 is formed.

Note that residues at the time of development (so-called scum) may also be removed after the insulating layer 278 is formed. For example, by performing ashing using oxygen plasma, residues can be removed. In addition, etching may also be performed in order to adjust the surface height of the insulating layer 278 . The insulating layer 278 can also be processed, for example, by ashing with oxygen plasma.

Next, as shown in FIGS. 13B and 13C , using the insulating layer 278 as a mask, a part of the protective film 271f is removed to form the protective layer 271 . In addition, removing a portion of the sacrificial layer 270R, the sacrificial layer 270G, and the sacrificial layer 270B forms openings in the sacrificial layer 270R, the sacrificial layer 270G, and the sacrificial layer 270B. Thereby, the top surfaces of the EL layer 172R, the EL layer 172G, and the EL layer 172B are exposed. Note that, as shown in FIG. 13C , the sacrificial layer 270R, the sacrificial layer 270G, and the sacrificial layer 270B may remain in regions overlapping the insulating layer 278 or the protective layer 271 .

Next, as shown in FIG. 13D , a common layer 174 is formed on the EL layer 172R, on the EL layer 172G, on the EL layer 172B, and on the insulating layer 278 . The common layer 174 can be formed by evaporation method (including vacuum evaporation method), transfer method, printing method, inkjet method, coating method and other methods.

Next, as shown in FIG. 13D , a conductive layer 173 is formed on the common layer 174 . The conductive layer 173 can be formed by methods such as sputtering or vacuum evaporation. Alternatively, the conductive layer 173 may be formed by laminating a film formed by a vacuum evaporation method and a film formed by a sputtering method.

Here, the conductive layer 173 may be continuously deposited after the common layer 174 is deposited, without performing processes such as etching in between. For example, the common layer 174 and the conductive layer 173 may always be formed under vacuum. This makes it possible to clean the bottom surface of the conductive layer 173 compared to the case where the common layer 174 is not provided in the display device.

Next, as shown in FIG. 13D , a protective layer 273 is formed on the conductive layer 173 . The protective layer 273 can be formed by methods such as vacuum evaporation, sputtering, CVD, or ALD.

Next, the substrate 13 a is bonded on the protective layer 273 using the adhesive layer 122 . A display device having the structure shown in FIG. 9A can be manufactured through the above process.

In the manufacturing method of the display device described above, the EL layer 172R, the EL layer 172G, and the EL layer 172B are formed by depositing an EL film on the entire surface, for example, by photolithography and etching, and then processing the EL film without using a high-definition metal mask. cover. Here, when the EL layer is formed using a high-definition metal mask, due to the accuracy of the metal mask, misalignment of the metal mask and the substrate, deflection of the metal mask, and, for example, changes in the profile of the deposited film due to vapor scattering However, the shape and position of the island-shaped light emitting layer deviate from the shape and position at the time of design, making it difficult to achieve high definition and high aperture ratio of the display device. As described above, a display device in which an EL layer is formed without using a high-definition metal mask can realize a display device with higher definition than a display device in which an EL layer is formed using a high-definition metal mask. In addition, a display device with a high aperture ratio can be realized.

In this specification and the like, a device manufactured using a metal mask or an FMM (Fine Metal Mask, high-definition metal mask) may be referred to as a device having an MM (Metal Mask) structure. In addition, in this specification and the like, a device manufactured without using a metal mask or FMM may be referred to as a device having an MML (Metal Mask Less) structure.

Next, an example of a method of manufacturing the display device having the structure shown in FIG. 10A will be described with reference to FIGS. 14A to 14D .

First, as shown in FIG. 14A, a layer 363 is provided on the substrate 11b. Next, the conductive layer 171 is formed by using the same method as that illustrated in FIG. 11A . Next, insulating layer 272 is formed to cover the end of conductive layer 171 . For example, the insulating layer 272 can be formed by depositing a film to be the insulating layer 272 and processing the film. The film to be the insulating layer 272 can be deposited using, for example, a spin coating method, a spray coating method, a screen printing method, a CVD method, a sputtering method, or a vacuum evaporation method. In addition, the processing of the film to be the insulating layer 272 can be performed by photolithography and etching, for example.

Next, as shown in FIG. 14B , an EL layer 172R is formed using an FMM 181R. For example, the EL layer 172R is formed by a vacuum evaporation method or a sputtering method using FMM181R. Note that the EL layer 172R may also be formed using an inkjet method. FIG. 14B shows a situation in which deposition is performed by a so-called face-down method in which the substrate is deposited with the substrate inverted so that the surface to be formed is located on the lower side.

Next, as shown in FIG. 14C , an EL layer 172G is formed using the FMM 181G. The EL layer 172G can be formed by the same method as that of the EL layer 172R. Likewise, as shown in FIG. 14D, an EL layer 172B is formed using an FMM 181B.

Here, by forming EL layer 172R, EL layer 172G, and EL layer 172B after forming insulating layer 272 , FMM 181 (FMM 181R, FMM 181G, and FMM 181B) can be brought close to conductive layer 171 while preventing contact with conductive layer 171 . Therefore, the opening of the EL layer 172 can be suppressed from being larger than that of the FMM 181 . Therefore, adjacent EL layers 172 can be prevented from contacting each other. As described above, compared with the case where the EL layer 172 is formed using the FMM 181 without forming the insulating layer 272 , the reliability of the display device can be improved.

In addition, when the EL layer 172R, the EL layer 172G, and the EL layer 172B are formed using the FMM 181 , the formation of a sacrificial layer and the processing of the EL film by photolithography and etching may not be necessary. Therefore, when the EL layer 172R, the EL layer 172G, and the EL layer 172B are formed using the FMM 181 , a display device can be manufactured in a simpler manner than when the EL layer 172R, the EL layer 172G, and the EL layer 172B are formed without using the FMM 181 . Therefore, a display device can be manufactured at low cost.

Next, a conductive layer 173 is formed on the EL layer 172R, on the EL layer 172G, on the EL layer 172B, and on the insulating layer 272 . As mentioned above, the conductive layer 173 can be formed by methods such as sputtering or vacuum evaporation. Alternatively, the conductive layer 173 may be formed by laminating a film formed by vapor deposition and a film formed by sputtering.

Next, a protective layer 273 is formed on the conductive layer 173 . As mentioned above, the protective layer 273 can be formed by methods such as vacuum evaporation, sputtering, CVD, or ALD. Thus, the display device shown in FIG. 10A can be manufactured.

Note that the EL layer 172R, the EL layer 172G, and the EL layer 172B included in the display device provided with the insulating layer 272 may also be formed without using the FMM 181 . For example, as shown in FIGS. 11B to 12F , after depositing an EL film on the entire surface, the EL film may be processed, for example, by photolithography and etching to form EL layer 172R, EL layer 172G, and EL layer 172B. In addition, when the EL layer 172R, the EL layer 172G, and the EL layer 172B are formed without using the FMM 181 , the protective layer 271 , the insulating layer 278 , and the common layer 174 may be formed. Furthermore, when forming a continuous EL layer 172W as shown in FIG. 10B as the EL layer 172, the EL layer 172W can be formed without using the FMM 181, so it is different from using the FMM 181 to form the EL layer separately for each light-emitting element 63W. Compared with the case of 172W, the manufacturing process of the display device can be simplified.

At least a part of the structural examples shown in this embodiment and the drawings corresponding to these examples can be appropriately combined with other structural examples, drawings, and the like.

At least a part of this embodiment mode can be implemented in combination with other embodiment modes described in this specification as appropriate.

Embodiment 2 In this embodiment mode, a pixel layout of a display device included in an electronic device according to one embodiment of the present invention will be described.

There is no particular limitation on the arrangement of sub-pixels constituting a pixel of a display device, and various methods can be used. Examples of the sub-pixel arrangement include a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a Delta arrangement, a Bayer arrangement, and a Pentile arrangement.

The shape of the top surface of the sub-pixel shown in the drawings in this embodiment corresponds to the shape of the top surface of the light emitting region.

In addition, examples of the shape of the top surface of the sub-pixel include polygons such as triangles, quadrangles (including rectangles, and squares), and pentagons, the above-mentioned polygons with rounded corners, ellipses, and circles.

The circuit layout constituting the sub-pixel is not limited to the range of the sub-pixel shown in the drawings, and may be arranged outside it.

The pixels 109 shown in FIG. 15A employ an S-stripe arrangement. The pixel 109 shown in FIG. 15A is composed of three sub-pixels of a sub-pixel 110a, a sub-pixel 110b, and a sub-pixel 110c.

The pixel 109 shown in FIG. 15B includes a sub-pixel 110a having an approximately triangular top surface shape with rounded corners, a sub-pixel 110b having an approximately trapezoidal top surface shape with rounded corners, and a sub-pixel 110b having a substantially trapezoidal top surface shape with rounded corners. The sub-pixel 110c has an approximately quadrangular or approximately hexagonal top surface shape. In addition, the light emitting area of the sub-pixel 110b is larger than that of the sub-pixel 110a. In this way, the shape and size of each sub-pixel can be independently determined. For example, the size of a sub-pixel including a highly reliable light-emitting element can be smaller.

The pixels 124a and 124b shown in FIG. 15C adopt a Pentile arrangement. FIG. 15C shows an example in which a pixel 124a including a sub-pixel 110a and a sub-pixel 110b and a pixel 124b including a sub-pixel 110b and a sub-pixel 110c are alternately arranged.

The pixels 124 a and 124 b shown in FIG. 15D , FIG. 15E , and FIG. 15F adopt a Delta arrangement. Pixel 124a includes two sub-pixels (sub-pixel 110a, sub-pixel 110b) in the upper row (first row) and one sub-pixel (sub-pixel 110c) in the lower row (second row). Pixel 124b includes one sub-pixel (sub-pixel 110c ) in the upper row (first row) and two sub-pixels (sub-pixel 110a , sub-pixel 110b ) in the lower row (second row).

Fig. 15D is an example in which each sub-pixel has an approximately quadrangular top surface shape with rounded corners, Fig. 15E is an example in which each sub-pixel has a circular top surface shape, and Fig. 15F is an example in which each sub-pixel has an approximate hexagonal shape with rounded corners. Example of top surface shape.

FIG. 15G shows an example in which sub-pixels of each color are arranged in a zigzag shape. Specifically, the positions of the upper sides of two sub-pixels (for example, sub-pixel 110 a and sub-pixel 110 b and sub-pixel 110 b and sub-pixel 110 c ) arranged in the column direction are shifted in plan view.

In each of the pixels shown in FIGS. 15A to 15G , for example, it is preferable to use a subpixel R that emits red light as the subpixel 110a, use a subpixel G that emits green light as the subpixel 110b, and use a subpixel G that emits green light as the subpixel 110c. Sub-pixel B that emits blue light is used. Note that the structure of the sub-pixels is not limited thereto, and the colors emitted by the sub-pixels and the order of arrangement can be appropriately determined. For example, a sub-pixel R that emits red light may be used as the sub-pixel 110b, and a sub-pixel G that emits green light may be used as the sub-pixel 110a.

In the photolithography method, the finer the pattern to be processed, the more the influence of light diffraction cannot be ignored. Therefore, when the pattern of the photomask is transferred by exposure, its fidelity decreases, and it is difficult to process the photoresist mask. for the desired shape. Therefore, even if the pattern of the photomask is rectangular, it is easy to form a pattern with rounded corners. Therefore, the shape of the top surface of the sub-pixel may be a polygon with rounded corners, an ellipse, a circle, or the like.

Furthermore, in the method of manufacturing a display device according to one embodiment of the present invention, the EL layer is processed into an island shape using a photoresist mask. The photoresist film formed on the EL layer needs to be cured at a temperature lower than the heat-resistant temperature of the EL layer. Therefore, depending on the heat resistance temperature of the material of the EL layer and the curing temperature of the photoresist material, the photoresist film may not be sufficiently cured. An insufficiently cured photoresist film may have a shape far from the desired shape when processed. As a result, the shape of the top surface of the EL layer may be a polygonal shape with rounded corners, an ellipse, a circle, or the like. For example, when a photoresist mask with a square top surface is to be formed, a circular top surface photoresist mask may be formed and the top surface of the EL layer may have a circular top surface shape.

In order to make the shape of the top surface of the EL layer a desired shape, it is also possible to use a technique (OPC (Optical Proximity Correction) technique) of correcting the mask pattern so that the design pattern matches the transfer pattern in advance. Specifically, in the OPC technique, for example, a correction pattern is added to a corner portion of a figure on a mask pattern.

As shown in FIGS. 16A to 16I , a pixel may include four sub-pixels.

The pixels 109 shown in FIGS. 16A to 16C employ a stripe arrangement.

16A is an example of each sub-pixel having a rectangular top shape, FIG. 16B is an example of each sub-pixel having a top shape connecting two semicircles and a rectangle, and FIG. 16C is an example of each sub-pixel having an elliptical top shape.

The pixels 109 shown in FIGS. 16D to 16F are arranged in a matrix.

16D is an example in which each sub-pixel has a square top shape, FIG. 16E is an example in which each sub-pixel has a nearly square shape with rounded corners, and FIG. 16F is an example in which each sub-pixel has a circular top shape.

16G and 16H show an example in which one pixel 109 is constituted by two rows and three columns.

Pixel 109 shown in FIG. 16G includes three subpixels (subpixel 110a, subpixel 110b, subpixel 110c) in the upper row (first row) and one subpixel (subpixel 110c) in the lower row (second row) 110d). In other words, pixel 109 includes subpixel 110a in the left column (first column), subpixel 110b in the middle column (second column), subpixel 110c in the right column (third column), and includes column of sub-pixels 110d.

Pixel 109 shown in FIG. 16H includes three sub-pixels (sub-pixel 110a, sub-pixel 110b, sub-pixel 110c) in the upper row (first row) and three sub-pixels 110d in the lower row (second row). In other words, pixel 109 includes sub-pixel 110a and sub-pixel 110d in the left column (first column), sub-pixel 110b and sub-pixel 110d in the middle column (second column), and sub-pixel 110c in the right column (third column). and sub-pixel 110d. As shown in FIG. 16H , by adopting a structure in which the arrangement of sub-pixels in the upper row and the lower row are aligned, dust that may be generated during the manufacturing process can be efficiently removed. Therefore, a display device with high display quality can be provided.

FIG. 16I shows an example in which one pixel 109 is configured in three rows and two columns.

The pixel 109 shown in FIG. 16I includes sub-pixels 110a in the upper row (first row), sub-pixels 110b in the middle row (second row), and sub-pixels 110c across the first row to the second row, The lower row (third row) includes one sub-pixel (sub-pixel 110d). In other words, pixel 109 includes sub-pixel 110a, sub-pixel 110b in the left column (first column), sub-pixel 110c in the right column (second column), and sub-pixel 110d across the two columns.

The pixel 109 shown in FIGS. 16A to 16I is constituted by four sub-pixels of a sub-pixel 110 a , a sub-pixel 110 b , a sub-pixel 110 c , and a sub-pixel 110 d.

The sub-pixel 110a, the sub-pixel 110b, the sub-pixel 110c, and the sub-pixel 110d may include light emitting elements that emit lights of different colors from each other. Examples of the sub-pixel 110a, the sub-pixel 110b, the sub-pixel 110c, and the sub-pixel 110d include sub-pixels of four colors of R, G, B, and white (W); and four colors of R, G, B, and Y. sub-pixels; and sub-pixels of four colors of R, G, B, and infrared light (IR); etc.

In each pixel 109 shown in FIG. 16A to FIG. 16I, for example, it is preferable to use a sub-pixel emitting red light as the sub-pixel 110a, a sub-pixel emitting green light as the sub-pixel 110b, and a sub-pixel emitting green light as the sub-pixel 110c. As the sub-pixel for blue light, a sub-pixel that emits white light, a sub-pixel that emits yellow light, or a sub-pixel that emits near-infrared light is used as the sub-pixel 110d. When the above structure is adopted, in the pixel 109 shown in FIG. 16G and FIG. 16H , the layout of R, G, and B becomes a stripe arrangement, so that the display quality can be improved. In addition, in the pixel 109 shown in FIG. 16I, the layout of R, G, and B is a so-called S-stripe arrangement, so that the display quality can be improved.

As shown in FIGS. 16J to 16K , a pixel may include five sub-pixels. Examples of sub-pixels of five colors include five-color sub-pixels of R, G, B, Y, and W.

FIG. 16J shows an example in which one pixel 109 is constituted by two rows and three columns.

Pixel 109 shown in FIG. 16J includes three sub-pixels (sub-pixel 110a, sub-pixel 110b, sub-pixel 110c) in the upper row (first row) and two sub-pixels (sub-pixel 110c) in the lower row (second row) pixel 110d, sub-pixel 110e). In other words, pixel 109 includes sub-pixel 110a, sub-pixel 110d in the left column (first column), sub-pixel 110b in the middle column (second column), sub-pixel 110c in the right column (third column), and horizontal across the sub-pixels 110e from the second column to the third column.

FIG. 16K shows an example in which one pixel 109 is configured in three rows and two columns.

The pixel 109 shown in FIG. 16K includes sub-pixels 110a in the upper row (first row), sub-pixels 110b in the middle row (second row), and sub-pixels 110c across the first row to the second row. The lower row (third row) includes two sub-pixels (sub-pixel 110d, sub-pixel 110e). In other words, the pixel 109 includes sub-pixels 110 a , 110 b , and 110 d in the left column (first column), and includes sub-pixels 110 c , 110 e in the right column (second column).

As described above, in the display device according to one embodiment of the present invention, various layouts can be adopted for pixels composed of sub-pixels including light-emitting elements.

At least a part of the structural examples shown in this embodiment and the drawings corresponding to these examples can be appropriately combined with other structural examples, drawings, and the like.

At least a part of this embodiment mode can be implemented in combination with other embodiment modes described in this specification as appropriate.

Embodiment 3 In this embodiment mode, a display device according to one embodiment of the present invention will be described.

[display module] FIG. 17 is a perspective view of the display module 280 . The display module 280 includes a display device 100A and an FPC 290 . Note that the display device included in the display module 280 is not limited to the display device 100A, and may be any one of the display devices 100B to 100G that will be described later. Display device 100A to display device 100G can be applied to display device 41 a described in Embodiment 1. FIG. FIG. 17 shows a substrate 11a, a display portion 37a, and a substrate 13a among components of the display device 100A.

FPC 290 is used as wiring for supplying data signals, power supply potential, and the like to display device 100A from the outside. In addition, IC can also be mounted on FPC290.

[Display device 100A] 18A is a cross-sectional view illustrating an example of the structure of the display device 100A, specifically, a cross-sectional view illustrating an example of the structure of a pixel included in the display device 100A. The display device 100A includes a substrate 301 , a light emitting element 61R, a light emitting element 61G, a light emitting element 61B, a capacitor 240 and a transistor 310 .

The substrate 301 corresponds to the substrate 11a in FIG. 17 . The transistor 310 is a transistor having a channel formation region in the substrate 301 . The transistor 310 includes a part of the substrate 301 , a conductive layer 311 , a pair of low resistance regions 312 , an insulating layer 313 and an insulating layer 314 . The conductive layer 311 is used as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and is used as a gate insulating layer. A pair of low resistance regions 312 are regions doped with impurities in the substrate 301 and are used as source and drain. The insulating layer 314 covers side surfaces of the conductive layer 311 .

In addition, an element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

In addition, an insulating layer 261 is provided to cover the transistor 310 , and the capacitor 240 is provided on the insulating layer 261 .

The capacitor 240 includes a conductive layer 241 , a conductive layer 245 and an insulating layer 243 therebetween. The conductive layer 241 serves as one electrode in the capacitor 240 , the conductive layer 245 serves as the other electrode in the capacitor 240 , and the insulating layer 243 serves as a dielectric of the capacitor 240 .

The conductive layer 241 is disposed on the insulating layer 261 and embedded in the insulating layer 254 . The conductive layer 241 is electrically connected to one of the source and the drain of the transistor 310 through a plug 275 embedded in the insulating layer 261 . The insulating layer 243 is provided to cover the conductive layer 241 . The conductive layer 245 is provided in a region overlapping the conductive layer 241 via the insulating layer 243 .

The insulating layer 255a is provided to cover the capacitor 240, the insulating layer 255b is provided on the insulating layer 255a, and the insulating layer 255c is provided on the insulating layer 255b. The light emitting element 61R, the light emitting element 61G, and the light emitting element 61B are provided on the insulating layer 255c. FIG. 18A shows an example in which a light emitting element 61R, a light emitting element 61G, and a light emitting element 61B have the stacked structure shown in FIG. 9A . The light emitting element 61R emits light 34aR, the light emitting element 61G emits light 34aG, and the light emitting element 61B emits light 34aB. Note that the display device 100A may include, for example, the light emitting element 63R, the light emitting element 63G, and the light emitting element 63B shown in FIG. 10A instead of the light emitting element 61R, the light emitting element 61G, and the light emitting element 61B. The same applies to the display device described later.

Insulators are provided in regions between adjacent light emitting elements 61 . For example, in FIG. 18A , a protective layer 271 and an insulating layer 278 on the protective layer 271 are disposed in this region.

The EL layer 172R is provided to cover the top and side surfaces of the conductive layer 171 included in the light emitting element 61R, and the EL layer 172G is provided to cover the top and side surfaces of the conductive layer 171 included in the light emitting element 61G to cover the light emitting element. The EL layer 172B is provided on the top surface and side surfaces of the conductive layer 171 included in the 61B. In addition, a sacrificial layer 270R is located on the EL layer 172R, a sacrificial layer 270G is located on the EL layer 172G, and a sacrificial layer 270B is located on the EL layer 172B.

The conductive layer 171 is formed by the plug 256 embedded in the insulating layer 243, the insulating layer 255a, the insulating layer 255b and the insulating layer 255c, the conductive layer 241 embedded in the insulating layer 254, the plug 275 embedded in the insulating layer 261, and the transistor. One of the source and the drain of 310 is electrically connected. The height of the top surface of the insulating layer 255 c is equal or substantially equal to the height of the top surface of the plug 256 . Various conductive materials can be used for the plug.

A protective layer 273 is provided on the light emitting element 61R, the light emitting element 61G, and the light emitting element 61B. The substrate 120 is pasted on the protection layer 273 by the adhesive layer 122 . The substrate 120 corresponds to the substrate 13a in FIG. 17 . Note that the components from the insulating layer 261 to the adhesive layer 122 may be the layer 12a shown in Embodiment Mode 1. In addition, the components from the insulating layer 261 to the insulating layer 255c may be the layer 363 shown in the first embodiment.

A light-shielding layer may be provided on the surface of the substrate 120 on the side of the adhesive layer 122 . In addition, various optical members may be arranged outside the substrate 120 . As the optical member, a polarizing plate, a retardation plate, a light diffusion layer (diffusion film, etc.), an antireflection layer, a condensing film, and the like can be used. In addition, a surface protection layer such as an antistatic film that suppresses adhesion of dust, a water-repellent film that is not easily stained, a hard coat film that suppresses damage during use, and a shock absorbing layer may be disposed on the outside of the substrate 120 . For example, it is preferable to provide a glass layer or a silicon dioxide layer (SiO _x layer) as a surface protection layer because it can suppress the surface from being soiled or damaged. In addition, DLC (diamond-like carbon), aluminum oxide (AlO _x ), polyester-based materials, polycarbonate-based materials, or the like may be used as the surface protection layer. In addition, it is preferable to use a material with high visible light transmittance as the surface protection layer. In addition, it is preferable to use a material with high hardness for the surface protection layer.

When laminating a circular polarizing plate on a display device, it is preferable to use a substrate with high optical isotropy as a substrate included in the display device. Substrates with high optical isotropy have low birefringence. Note that a substrate with high optical isotropy can also be said to have a small amount of birefringence.

The absolute value of the retardation value of the substrate with high optical isotropy is preferably at most 30 nm, more preferably at most 20 nm, further preferably at most 10 nm.

Examples of films with high optical isotropy include cellulose triacetate (also referred to as TAC: Cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic films.

In addition, when a thin film is used as a substrate, there is a possibility that the shape of the display device may change due to water absorption by the thin film, such as wrinkles. Therefore, it is preferable to use a thin film with a low water absorption rate as the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferably a film with an absorption rate of 0.1% or less, and even more preferably a film with an absorption rate of 0.01% or less.

[Display device 100B] The display device 100B shown in FIG. 18B includes a substrate 301 , a light emitting element 61W, a capacitor 240 and a transistor 310 . FIG. 18B shows an example in which the light emitting element 61W has the laminated structure shown in FIG. 9B. In addition, the display device 100B includes a color layer 183R, a color layer 183G, and a color layer 183B, and a region where one light emitting element 61W overlaps one of the color layer 183R, the color layer 183G, and the color layer 183B. In the display device 100B, the light emitting element 61W can emit white light, for example. In addition, for example, the color layer 183R can transmit red light, the color layer 183G can transmit green light, and the color layer 183B can transmit blue light. As described above, the display device 100B can, for example, emit red light 34aR, green light 34aG, and blue light 34aB to perform full-color display.

[Display device 100C] A display device 100C shown in FIG. 19 has a structure in which a transistor 310A and a transistor 310B in which channels are formed in a semiconductor substrate are stacked. Note that in the description of the display device described later, the description of the same parts as those of the display device described above may be omitted.

The display device 100C has a structure in which a substrate 301B provided with a transistor 310B, a capacitor 240 , and a light emitting element 61 is bonded to a substrate 301A provided with a transistor 310A.

Here, preferably, an insulating layer 345 is provided on the bottom surface of the substrate 301B. In addition, it is preferable to provide the insulating layer 346 on the insulating layer 261 provided on the substrate 301A. The insulating layer 345 and the insulating layer 346 are insulating layers used as protective layers, and can suppress the diffusion of impurities into the substrate 301B and the substrate 301A. An inorganic insulating film that can be used for the protective layer 273 can be used as the insulating layer 345 and the insulating layer 346 .

The substrate 301B is provided with a plug 343 passing through the substrate 301B and the insulating layer 345 . Here, it is preferable to provide the insulating layer 344 so as to cover the side surfaces of the plug 343 . The insulating layer 344 is an insulating layer used as a protective layer, and can suppress the diffusion of impurities to the substrate 301B. As the insulating layer 344, an inorganic insulating film that can be used for the protective layer 273 can be used.

In addition, a conductive layer 342 is provided under the insulating layer 345 on the back side of the substrate 301B (the surface on the substrate 301A side). The conductive layer 342 is preferably embedded in the insulating layer 335 . In addition, it is preferable to planarize the bottom surfaces of the conductive layer 342 and the insulating layer 335 . Here, the conductive layer 342 is electrically connected to the plug 343 .

On the other hand, a conductive layer 341 is provided on an insulating layer 346 between the substrate 301A and the substrate 301B. The conductive layer 341 is preferably embedded in the insulating layer 336 . In addition, the top surfaces of the conductive layer 341 and the insulating layer 336 are preferably planarized.

The conductive layer 341 is bonded to the conductive layer 342 , whereby the substrate 301A and the substrate 301B are electrically connected. Here, by improving the flatness of the surface formed by the conductive layer 342 and the insulating layer 335 and the surface formed by the conductive layer 341 and the insulating layer 336 , the conductive layer 341 and the conductive layer 342 can be bonded well.

It is preferable to use the same conductive material as the conductive layer 341 and the conductive layer 342 . For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, W or a metal nitride film (such as a titanium nitride film, a molybdenum nitride film, or a nitrogen film) containing the above elements as a component can be used. tungsten film), etc. Copper is particularly preferably used as the conductive layer 341 and the conductive layer 342 . Accordingly, a Cu—Cu (copper—copper) direct bonding technique (a technique of electrically conducting by connecting Cu (copper) pads to each other) can be used.

[Display device 100D] The display device 100D shown in FIG. 20 has a structure in which the conductive layer 341 and the conductive layer 342 are joined by bumps 347 .

As shown in FIG. 20 , by disposing bumps 347 between the conductive layer 341 and the conductive layer 342 , the conductive layer 341 and the conductive layer 342 can be electrically connected. The bump 347 can be formed using, for example, a conductive material including gold (Au), nickel (Ni), indium (In), tin (Sn), or the like. For example, solder is sometimes used as the bump 347 . In addition, an adhesive layer 348 may also be provided between the insulating layer 345 and the insulating layer 346 . In addition, when the bump 347 is provided, the insulating layer 335 and the insulating layer 336 may not be provided.

[Display device 100E] The difference between the display device 100E shown in FIG. 21 and the display device 100A mainly lies in the structure of the transistor.

Transistor 320 is an OS transistor. The transistor 320 includes a semiconductor layer 321 , an insulating layer 323 , a conductive layer 324 , a pair of conductive layers 325 , an insulating layer 326 and a conductive layer 327 .

The substrate 331 corresponds to the substrate 11a in FIG. 17 . An insulating substrate or a semiconductor substrate can be used as the substrate 331 .

An insulating layer 332 is provided on the substrate 331 . The insulating layer 332 is used as a barrier layer that prevents impurities such as water and hydrogen from diffusing from the substrate 331 to the transistor 320 and prevents oxygen from detaching from the semiconductor layer 321 to the insulating layer 332 side. As the insulating layer 332 , for example, a film in which hydrogen or oxygen is less likely to diffuse than a silicon oxide film such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film or the like can be used.

The conductive layer 327 is provided on the insulating layer 332 , and the insulating layer 326 is provided so as to cover the conductive layer 327 . The conductive layer 327 serves as a first gate electrode of the transistor 320, and a part of the insulating layer 326 serves as a first gate insulating layer. An oxide insulating film such as a silicon oxide film is preferably used for at least a region of the insulating layer 326 that contacts the semiconductor layer 321 . The top surface of the insulating layer 326 is preferably planarized.

The semiconductor layer 321 is disposed on the insulating layer 326 . The semiconductor layer 321 preferably includes a metal oxide film having semiconductor properties. A pair of conductive layers 325 are in contact with the semiconductor layer 321 and serve as source electrodes and drain electrodes.

The insulating layer 328 is provided to cover the top and side surfaces of the pair of conductive layers 325 and the side surfaces of the semiconductor layer 321 , and the like, and the insulating layer 264 is provided on the insulating layer 328 . The insulating layer 328 is used as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 264 and the like to the semiconductor layer 321 and detachment of oxygen from the semiconductor layer 321 . As the insulating layer 328, the same insulating film as that of the insulating layer 332 described above can be used.

Openings reaching the semiconductor layer 321 are provided in the insulating layer 328 and the insulating layer 264 . The opening is embedded with the insulating layer 323 contacting the side surfaces of the insulating layer 264 , the insulating layer 328 and the conductive layer 325 and the top surface of the semiconductor layer 321 , and the conductive layer 324 on the insulating layer 323 . The conductive layer 324 is used as a second gate electrode, and the insulating layer 323 is used as a second gate insulating layer.

The top surface of the conductive layer 324, the top surface of the insulating layer 323, and the top surface of the insulating layer 264 are planarized so that their heights are all the same or approximately the same, and the insulating layer 329 and the insulating layer 265 are provided to cover them. .

The insulating layer 264 and the insulating layer 265 are used as interlayer insulating layers. The insulating layer 329 is used as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 265 and the like to the transistor 320 . As the insulating layer 329, the same insulating film as that of the insulating layer 328 and the insulating layer 332 described above can be used.

The plug 274 electrically connected to one of the pair of conductive layers 325 is embedded in the insulating layer 265 , the insulating layer 329 , the insulating layer 264 and the insulating layer 328 . Here, the plug 274 preferably has a conductive layer 274a covering the sides of the respective openings of the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328 and a part of the top surface of the conductive layer 325, and the top surface of the conductive layer 274a. The conductive layer 274b is in surface contact. In this case, as the conductive layer 274a, it is preferable to use a conductive material that does not easily diffuse hydrogen and oxygen.

Note that in the display device 100E, the components from the insulating layer 332 to the adhesive layer 122 may be the layer 12a shown in Embodiment Mode 1. In addition, the component from the insulating layer 332 to the insulating layer 255c may be the layer 363 shown in the first embodiment.

[display device 100F] A display device 100F shown in FIG. 22 has a structure in which a transistor 320A and a transistor 320B each including an oxide semiconductor in a semiconductor forming a channel are stacked.

The structures of the transistor 320A, the transistor 320B and their surroundings can be referred to the above-mentioned display device 100E.

Note that, here, a structure in which two transistors including an oxide semiconductor are stacked is employed, but is not limited to this structure. For example, a structure in which three or more transistors are stacked may be employed.

[display device 100G] In a display device 100G shown in FIG. 23 , a transistor 310 in which a channel is formed on a substrate 301 and a transistor 320 in which a semiconductor layer forming a channel contains a metal oxide are stacked.

An insulating layer 261 is provided to cover the transistor 310 , and a conductive layer 251 is provided on the insulating layer 261 . Furthermore, an insulating layer 262 is provided to cover the conductive layer 251 , and the conductive layer 252 is provided on the insulating layer 262 . Both the conductive layer 251 and the conductive layer 252 are used as wiring. In addition, an insulating layer 263 and an insulating layer 332 are provided to cover the conductive layer 252 , and the transistor 320 is provided on the insulating layer 332 . Furthermore, an insulating layer 265 is provided to cover the transistor 320 , and the capacitor 240 is provided on the insulating layer 265 . The capacitor 240 is electrically connected to the transistor 320 through a plug 274 .

The transistor 320 can be used as a transistor constituting a pixel circuit. Furthermore, the transistor 310 can be used as a transistor constituting a pixel circuit or a transistor constituting a drive circuit (a gate drive circuit or a source drive circuit, etc.) for driving the pixel circuit. In addition, the transistor 310 and the transistor 320 can be used as transistors constituting various circuits such as arithmetic circuits and memory circuits.

With this structure, not only the pixel circuit but also the driver circuit can be formed directly under the light emitting element, so that the display device can be miniaturized compared with the case where the driver circuit is provided around the display area.

[Display device 100H] FIG. 24 shows a perspective view of the display device 100H. The display device 100H can be applied to the display device 41b described in the first embodiment. The same applies to the display device 100I to the display device 100M described later.

The display device 100H has a structure in which a substrate 13b and a substrate 11b are bonded together. In FIG. 24, the substrate 13b is indicated by a dotted line.

The display device 100H includes a display portion 37b, a connection portion 140, a circuit 164, wiring 165, and the like. FIG. 24 shows an example in which IC 176 and FPC 177 are mounted in display device 100H. Therefore, the structure shown in FIG. 24 can also be called a display module including the display device 100H, an IC (Integrated Circuit), and an FPC. Here, a substrate of a display device on which a connector such as an FPC is mounted or the substrate on which an IC is mounted is referred to as a display module.

The display portion 37 b is provided to surround the area 47 . Here, the display unit 37c described in Embodiment 1 may be provided in the region 47 . In addition, the display part 37c may be provided instead of the display part 37b, and the display part 37c may be provided in the area|region 47.

The connecting portion 140 is provided outside the display portion 37b. The connection part 140 may be provided along one side or a plurality of sides of the display part 37b. The number of connecting parts 140 may also be one or more. FIG. 24 shows an example in which the connecting portion 140 is provided so as to surround the four sides of the display portion 37b. In the connection part 140, the common electrode of the light-emitting element is electrically connected to the conductive layer, and a potential can be supplied to the common electrode.

As the circuit 164, for example, a gate drive circuit can be used.

Signals and power can be supplied to the display unit 37b and the circuit 164 via the wiring 165 . The signal and electric power are externally input to the wiring 165 via the FPC 177 or are input to the wiring 165 from the IC 176 .

FIG. 24 shows an example in which IC 176 is provided on a substrate 11 b by a COG (Chip On Glass) method, a COF (Chip On Film) method, or the like. As the IC 176 , for example, an IC including a gate driver circuit, a source driver circuit, or the like can be used. Note that the display device 100H and the display module do not necessarily have to be provided with ICs. In addition, for example, an IC may be mounted on an FPC by a COF method.

25A shows an example of a cross section of a part of the region including FPC 177 , part of circuit 164 , part of display unit 107 , part of connection unit 140 , and part of the region including the end of display device 100H. Here, the display portion 37 b shown in FIG. 24 may have the structure of the display portion 107 . In addition, when the display portion 37 c described in Embodiment 1 is provided in the region 47 , the display portion 37 c may have the structure of the display portion 107 .

The display device 100H shown in FIG. 25A includes a transistor 201, a transistor 205, a light emitting element 63R emitting red light 34bR, a light emitting element 63G emitting green light 34bG, and a light emitting element emitting blue light 34bB between the substrate 11b and the substrate 13b. 63B et al. In addition, various optical members may be arranged outside the substrate 13b. As the optical member, a polarizing plate, a retardation plate, a light diffusion layer (diffusion film, etc.), an antireflection layer, a condensing film, and the like can be used.

Each of the light emitting element 63R, the light emitting element 63G, and the light emitting element 63B has the stacked structure shown in FIG. 10A . For details of the light emitting element 63 , refer to the first embodiment.

Note that the display device 100H may include, for example, the light emitting element 61R, the light emitting element 61G, and the light emitting element 61B shown in FIG. 9A instead of the light emitting element 63R, the light emitting element 63G, and the light emitting element 63B. The same applies to the display device described later.

The conductive layer 171 included in the light emitting element 63 and used as a pixel electrode is electrically connected to the conductive layer 222 b included in the transistor 205 through the opening provided in the insulating layer 214 . The conductive layer 171 is disposed along the opening of the insulating layer 214 . Thus, a concave portion is provided in the conductive layer 171 .

In addition, FIG. 25A shows an example in which insulating layer 272 is provided so as to cover the end of conductive layer 171 . The insulating layer 272 may be provided so as to be embedded in the concave portion of the conductive layer 171 .

A protective layer 273 is provided on the light emitting element 63R, the light emitting element 63G, and the light emitting element 63B. The protective layer 273 and the substrate 13 b are bonded by the adhesive layer 122 . The sealing of the light emitting element 63 may adopt a solid sealing structure or a hollow sealing structure. In FIG. 25A, the space between the substrate 13b and the protective layer 273 is filled with the adhesive layer 122, that is, a solid sealing structure is adopted. Alternatively, the space can also be filled with an inert gas (nitrogen or argon, etc.), that is, a hollow sealed structure is adopted. At this time, the adhesive layer 122 may be provided so as not to overlap the light emitting element. In addition, the space may be filled with a resin different from that of the adhesive layer 122 provided in a frame shape.

FIG. 25A shows an example in which connection portion 140 includes conductive layer 168 obtained by processing the same conductive film as that to be conductive layer 171 . The conductive layer 168 is supplied with a power supply potential, and is electrically connected to the conductive layer 173 used as a common electrode. Therefore, the power supply potential can be supplied to the conductive layer 173 through the conductive layer 168 .

The display device 100H is a top emission type display device. Light emitted from the light emitting element is output to the substrate 13b side. The conductive layer 171 used as a pixel electrode includes a material that reflects visible light, and the conductive layer 173 used as a common electrode includes a material that transmits visible light.

Both the transistor 201 and the transistor 205 are formed on the substrate 11b. These transistors can be manufactured using the same material and the same process. Note that the components from the transistor 201 and the transistor 205 to the adhesive layer 122 can be the layer 12b shown in the first embodiment. In addition, the components from the transistor 201 and the transistor 205 to the insulating layer 214 may be the layer 363 shown in the first embodiment.

An insulating layer 211 , an insulating layer 213 , an insulating layer 215 , and an insulating layer 214 are sequentially provided on the substrate 11 b. Part of the insulating layer 211 serves as a first gate insulating layer of each transistor. A part of the insulating layer 213 serves as a second gate insulating layer of each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistors, and is used as a planarization layer. In addition, there is no particular limitation on the number of gate insulating layers and the number of insulating layers covering the transistor, which may be one or more than two.

Preferably, a material from which impurities such as water and hydrogen do not easily diffuse is used for at least one of the insulating layers covering the transistor. Thus, the insulating layer can be used as a barrier layer. By adopting this structure, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby improving the reliability of the display device.

It is preferable to use an inorganic insulating film as the insulating layer 211, the insulating layer 213, and the insulating layer 215. As the inorganic insulating film, for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, an aluminum nitride film, or the like can be used. In addition, hafnium oxide films, yttrium oxide films, zirconium oxide films, gallium oxide films, tantalum oxide films, magnesium oxide films, lanthanum oxide films, cerium oxide films, neodymium oxide films, and the like can also be used. In addition, two or more of the above insulating films may be laminated.

The insulating layer 214 used as a planarization layer is preferably an organic insulating layer. Examples of materials that can be used for the organic insulating layer include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimideamide resins, siloxane resins, and benzocyclobutenes. Resins, phenolic resins and precursors of the above resins, etc. In addition, the insulating layer 214 may also have a laminated structure of an organic insulating layer and an inorganic insulating layer. The uppermost layer of the insulating layer 214 is preferably used as an etch protection layer. Accordingly, it is possible to suppress the formation of recesses in the insulating layer 214 when the conductive film to be the conductive layer 171 is processed. Alternatively, for example, a recess may be provided in the insulating layer 214 at the time of processing the conductive film to be the conductive layer 171 .

The transistor 201 and the transistor 205 include: a conductive layer 221 used as a gate; an insulating layer 211 used as a first gate insulating layer; a conductive layer 222a and a conductive layer 222b used as a source and a drain; a semiconductor layer 231 ; an insulating layer 213 serving as a second gate insulating layer; and a conductive layer 223 serving as a gate. Here, a plurality of layers obtained by processing the same conductive film are indicated by the same hatching. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231 . The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231 .

There is no particular limitation on the transistor structure included in the display device of the present embodiment. For example, planar transistors, staggered transistors, or reverse staggered transistors can be used. In addition, the transistors can all have a top-gate structure or a bottom-gate structure. Alternatively, gate electrodes may be provided above and below the semiconductor layer forming the channel.

As the transistor 201 and the transistor 205, a structure in which two gate electrodes sandwich a semiconductor layer forming a channel is adopted. In addition, it is also possible to connect two gates and drive the transistor by supplying the same signal to both gates. Alternatively, the threshold voltage of the transistor can be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

The crystallinity of the semiconductor layer of the transistor is also not particularly limited, and amorphous semiconductors and crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single crystal semiconductors, or semiconductors having crystalline regions in part thereof) can be used. It is preferable to use a semiconductor having crystallinity because deterioration in characteristics of the transistor can be suppressed.

The semiconductor layer of the transistor is preferably metal oxide. That is to say, the transistors included in the display device of this embodiment preferably use OS transistors.

Examples of metal oxides that can be used in the semiconductor layer include indium oxide, gallium oxide, and zinc oxide. In addition, the metal oxide preferably contains two or three selected from indium, element and zinc. Note that element M is selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, cobalt and one or more of magnesium. In particular, the element M is preferably one or more selected from aluminum, gallium, yttrium and tin.

In particular, an oxide (also referred to as IGZO) containing indium (In), gallium (Ga), and zinc (Zn) is preferably used as the metal oxide used for the semiconductor layer. Alternatively, it is preferable to use an oxide (also referred to as ITZO (registered trademark)) containing indium, tin, and zinc. Alternatively, it is preferred to use oxides containing indium, gallium, tin and zinc. Alternatively, an oxide containing indium (In), aluminum (Al) and zinc (Zn) (also referred to as IAZO) is preferably used. Alternatively, an oxide containing indium (In), aluminum (Al), gallium (Ga) and zinc (Zn) (also referred to as IAGZO) is preferably used.

When the metal oxide used for the semiconductor layer is an In-M-Zn oxide, the atomic number ratio of In in the In-M-Zn oxide is preferably greater than or equal to the atomic number ratio of M. Examples of the atomic number ratio of metal elements in such an In-M-Zn oxide include a composition of In:M:Zn=1:1:1 or its vicinity, In:M:Zn=1:1: 1.2 or its vicinity, In:M:Zn=1:3:2 or its vicinity, In:M:Zn=1:3:4 or its vicinity, In:M:Zn=2:1 :3 or its vicinity, In:M:Zn=3:1:2 or its vicinity, In:M:Zn=4:2:3 or its vicinity, In:M:Zn=4: 2:4.1 or its vicinity, In:M:Zn=5:1:3 or its vicinity, In:M:Zn=5:1:6 or its vicinity, In:M:Zn=5 : 1:7 or its vicinity, In:M:Zn=5:1:8 or its vicinity, In:M:Zn=6:1:6 or its vicinity, In:M:Zn= Compositions at or near 5:2:5. In addition, the composition in the vicinity includes a range of ±30% of the desired atomic number ratio.

For example, when the atomic number ratio is described as In:Ga:Zn=4:2:3 or its vicinity, the following cases are included: when In is 4, Ga is 1 to 3, and Zn is 2 to 4. the following. In addition, when the composition of the atomic number ratio is described as In:Ga:Zn=5:1:6 or its vicinity, the following cases are included: when In is 5, Ga is greater than 0.1 and 2 or less, and Zn is 5 or more and 7 or less. the following. In addition, when the atomic number ratio is described as In:Ga:Zn=1:1:1 or its vicinity, the following cases are included: when In is 1, Ga is greater than 0.1 and less than 2, and Zn is greater than 0.1 and is 2. the following.

The semiconductor layer may include two or more metal oxide layers having different compositions. For example, it may be preferable to use a first metal oxide layer having a composition of In:M:Zn=1:3:4 [atomic number ratio] or its vicinity and In provided on the first metal oxide layer: M: A laminated structure of the second metal oxide layer having a composition of Zn=1:1:1 [atomic number ratio] or its vicinity. Furthermore, it is particularly preferred to use gallium or aluminum as element M.

For example, a laminated structure of any one selected from indium oxide, indium gallium oxide, and IGZO, and any one selected from IAZO, IAGZO, and ITZO (registered trademark), or the like may be used.

Examples of crystalline oxide semiconductors include CAAC (c-axis-aligned crystalline)-OS, nc (nanocrystalline)-OS, and the like.

Alternatively, a transistor (Si transistor) using silicon for a channel formation region may also be used. Examples of silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor containing low temperature polysilicon (LTPS: Low Temperature Poly Silicon) in a semiconductor layer (also referred to as an LTPS transistor) can be used. LTPS transistors have high field efficiency mobility and good frequency characteristics.

By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (for example, data driver circuits) and a display section can be formed on the same substrate. Therefore, external circuits mounted on the display device can be simplified, and component costs and mounting costs can be reduced.

The field effect mobility of OS transistors is much higher than that of transistors using amorphous silicon. In addition, the leakage current between the source and the drain of the OS transistor in the off state (also referred to as off-state current) is extremely low, and the charge stored in the capacitor connected in series with the transistor can be retained for a long period of time. In addition, by using the OS transistor, the power consumption of the display device can be reduced.

In addition, when increasing the emission luminance of a light emitting element included in a pixel circuit, it is necessary to increase the amount of current flowing through the light emitting element. Therefore, it is necessary to increase the source-drain voltage of the driving transistor included in the pixel circuit. Since the withstand voltage between the source and the drain of the OS transistor is higher than that of the Si transistor, a high voltage can be applied between the source and the drain of the OS transistor. Thus, by using the OS transistor as the driving transistor included in the pixel circuit, the amount of current flowing through the light emitting element can be increased to improve the light emitting luminance of the light emitting element.

In addition, when the transistor is driven in a saturation region, the OS transistor can make the change of the source-drain current according to the change of the gate-source voltage smaller than that of the Si transistor. Therefore, by using the OS transistor as the driving transistor included in the pixel circuit, the current flowing between the source and the drain can be determined in detail by controlling the voltage between the gate and the source. It is thus possible to control the amount of current flowing through the light emitting element. Thereby, the gradation represented by the pixel circuit can be increased.

In addition, regarding the saturation characteristics of the current flowing when the transistor is driven in the saturation region, compared with the Si transistor, the OS transistor can make a stable current (saturation current) flow even if the source-drain voltage is gradually increased. Pass. Therefore, by using the OS transistor as a driving transistor, even if, for example, the current-voltage characteristic of an organic EL element becomes uneven, a stable current can be caused to flow through the light emitting element. That is, when the OS transistor is driven in a saturation region, even if the source-drain voltage is increased, the source-drain current hardly changes. Therefore, the light emission luminance of the light emitting element can be stabilized.

As described above, by using the OS transistor as the driving transistor included in the pixel circuit, it is possible to suppress black blur, increase luminous luminance, multi-gradation, suppress characteristic unevenness of the light-emitting element, and the like.

The transistor included in the circuit 164 and the transistor included in the display unit 107 may have the same structure or may have a different structure. The multiple transistors included in the circuit 164 may have the same structure, or more than two different structures. Similarly, the plurality of transistors included in the display unit 107 may have the same structure, or may have two or more different structures.

All transistors included in the display unit 107 may be OS transistors or Si transistors. In addition, part of the transistors included in the display unit 107 may also be OS transistors and the remaining transistors may also be Si transistors.

For example, by using both of the LTPS transistor and the OS transistor in the display section 107, a display device having low power consumption and high driving capability can be realized. Also, a structure combining an LTPS transistor and an OS transistor is sometimes referred to as LTPO. In addition, for example, it is preferable to use an OS transistor for a transistor used as a switch for controlling the conduction/non-conduction of a wiring, and use an LTPS transistor for a transistor for controlling a current.

For example, one of the transistors included in the display section 107 is used as a transistor for controlling the current flowing through the light emitting element, and may be referred to as a driving transistor. One of the source and the drain of the driving transistor is electrically connected to the pixel electrode of the light emitting element. The driving transistor is preferably an LTPS transistor. Thus, the current flowing through the light emitting element can be increased.

On the other hand, the other one of the transistors included in the display unit 107 is used as a switch function for controlling selection and non-selection of pixels, and may also be referred to as a selection transistor. The gate of the selection transistor is electrically connected to the gate line, and one of the source and the drain is electrically connected to the signal line. The selection transistor is preferably an OS transistor. Therefore, since the gray scale of the pixel can be maintained even if the frame frequency is extremely low (for example, 1 fps or less), power consumption can be reduced by stopping the driver when displaying a still image.

In this way, the display device according to one embodiment of the present invention can have high aperture ratio, high definition, high display quality and low power consumption.

Note that a display device of one embodiment of the present invention employs a structure including an OS transistor and a light emitting element having an MML structure. By adopting this structure, the leakage current that can flow through the transistor and the leakage current that can flow between adjacent light emitting elements can be made extremely low. In addition, by adopting the above structure, the viewer can observe any one or more of sharpness of the image, sharpness of the image, high color saturation, and high contrast when the image is displayed on the display device. In addition, by adopting a structure in which the leakage current that can flow through the transistor and the lateral leakage current between light emitting elements are extremely low, for example, a display with very little light leakage (so-called black impurity) that may occur when displaying black can be realized.

In particular, when the SBS structure is adopted from the light-emitting element of the MML structure, the layers provided between the light-emitting elements are divided, whereby side leakage can be eliminated or minimized.

25B and 25C show other structural examples of transistors.

The transistor 209 and the transistor 210 include: a conductive layer 221 used as a gate; an insulating layer 211 used as a first gate insulating layer; a semiconductor layer 231 comprising a channel forming region 231i and a pair of low-resistance regions 231n; and a A conductive layer 222a electrically connected to one of the low-resistance regions 231n; a conductive layer 222b electrically connected to the other of the pair of low-resistance regions 231n; an insulating layer 225 serving as a second gate insulating layer; serving as a gate The conductive layer 223; and the insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel forming region 231i. Furthermore, an insulating layer 218 covering the transistors may also be provided.

In the example shown in FIG. 25B , the insulating layer 225 covers the top and side surfaces of the semiconductor layer 231 in the transistor 209 . Both the conductive layer 222 a and the conductive layer 222 b are electrically connected to the low-resistance region 231 n through openings disposed in the insulating layer 225 and the insulating layer 215 . Of the conductive layer 222a and the conductive layer 222b, one is used as a source, and the other is used as a drain.

On the other hand, in the transistor 210 shown in FIG. 25C, the insulating layer 225 overlaps the channel formation region 231i of the semiconductor layer 231 and does not overlap the low-resistance region 231n. For example, by processing the insulating layer 225 with the conductive layer 223 as a mask, the structure shown in FIG. 25C can be formed. In FIG. 25C , the insulating layer 215 covers the insulating layer 225 and the conductive layer 223 , and the conductive layer 222 a and the conductive layer 222 b are respectively electrically connected to the low-resistance region 231 n through the opening of the insulating layer 215 .

The connecting portion 204 is provided in a region of the substrate 11b that does not overlap the substrate 13b. In connection portion 204 , wiring 165 is electrically connected to FPC 177 via conductive layer 166 and connection layer 242 . The conductive layer 166 may be a conductive layer obtained by processing the same conductive film as the conductive film to be the conductive layer 171 . The conductive layer 166 is exposed on the top surface of the connection portion 204 . Accordingly, the connection portion 204 and the FPC 177 can be electrically connected via the connection layer 242 .

Each of the substrate 11b and the substrate 13b can be made of a material that can be used for the substrate 120 .

As the connection layer 242 , an anisotropic conductive film (ACF: Anisotropic Conductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste), or the like can be used.

[Display device 100I] The display device 100I shown in FIG. 26 is a modified example of the display device 100H shown in FIG. 25A . The difference between the display device 100I and the display device 100H is that a substrate 15 is provided instead of the substrate 11 b and a substrate 16 is provided instead of the substrate 13 b.

The substrate 15 and the substrate 16 have flexibility. Thus, the display device 100I has flexibility. That is to say, the display device 100I is a flexible display. The substrate 15 is adhered to the insulating layer 162 by the adhesive layer 156 , and the transistor 201 and the transistor 205 are disposed on the insulating layer 162 . The adhesive layer 156 may use the same material that may be used for the adhesive layer 122 . The insulating layer 162 may use the same material as that which may be used for the insulating layer 211 , the insulating layer 213 or the insulating layer 215 . Note that in the display device 100I, the components from the adhesive layer 156 to the adhesive layer 122 may be the layer 12b shown in the first embodiment. In addition, the components from the adhesive layer 156 to the insulating layer 214 may be the layer 363 shown in the first embodiment.

In the method of manufacturing the display device 100I shown in FIG. 26 , first, an insulating layer 162 is formed on a manufacturing substrate, and each transistor, light-emitting element 63 , and the like are formed on the insulating layer 162 . Next, for example, the substrate 16 is bonded to the light emitting element 63 by the adhesive layer 122 . Then, the substrate 15 is bonded to the surface exposed by peeling off the production substrate using the adhesive layer 156 , thereby transferring each component formed on the production substrate to the substrate 15 . Through the above process, the display device 100I can be manufactured.

[display device 100J] The display device 100J shown in FIG. 27 is a modified example of the display device 100H shown in FIG. 25A. The main difference between the display device 100J and the display device 100H is that a light-emitting element 63W is provided as a light-emitting element and includes a color layer 183R and a color layer 183G. And the color layer 183B. FIG. 27 shows an example in which the light emitting element 63W has the laminated structure shown in FIG. 10B .

In the display device 100J, one light emitting element 63W has a region overlapping one of the color layer 183R, the color layer 183G, and the color layer 183B. The color layer 183R, the color layer 183G, and the color layer 183B may be provided on the surface of the substrate 13b on the substrate 11b side.

In the display device 100J, the light shielding layer 117 is provided in a region of the display unit 107 where the color layer 183R, the color layer 183G, and the color layer 183B are not provided. Furthermore, in the display device 100J, the light shielding layer 117 may be provided in the connection portion 140 and the circuit 164 . Note that the light shielding layer 117 may also be provided in the display device 100H or the display device 100I.

In the display device 100J, the light emitting element 63W can emit white light, for example. In addition, for example, the color layer 183R can transmit red light, the color layer 183G can transmit green light, and the color layer 183B can transmit blue light. As described above, the display device 100J can emit, for example, red light 34bR, green light 34bG, and blue light 34bB to perform full-color display.

[display device 100K] The display device 100K shown in FIG. 28 is a modified example of the display device 100H shown in FIG. 25A , and the main difference between the display device 100K and the display device 100H is that the display device 100K is a bottom emission display device.

Light 34bR, light 34bG, and light 34bB are emitted to the substrate 11b side. The conductive layer 171 uses a material having high transmittance to visible light. On the other hand, the conductive layer 173 is preferably made of a material that reflects visible light.

[display device 100L] The display device 100L shown in FIG. 29 is a modified example of the display device 100I shown in FIG. 26. The main difference between the display device 100L and the display device 100I is that the display device 100L has the same bottom as the display device 100K shown in FIG. emissive display device.

In the display device 100L, the components from the adhesive layer 156 to the adhesive layer 122 may be the layer 12b shown in the first embodiment. In addition, the components from the adhesive layer 156 to the insulating layer 214 may be the layer 363 shown in the first embodiment.

Here, when the display unit 107 of the display device 100K or the display device 100L is used for the display unit 37 c described in Embodiment Mode 1, the conductive layer 173 has a light-transmitting structure for visible light. In addition, at least a part of the layers constituting the transistor 205 is preferably transparent to visible light. For example, the conductive layer 222a and the conductive layer 222b are preferably transparent to visible light. As mentioned above, when the substrate 11b, the insulating layer 211, the insulating layer 213, the insulating layer 215, the insulating layer 214, the insulating layer 272, the protective layer 273, the adhesive layer 122, and the substrate 13b are transparent to visible light, the display device 100K The included display portion 107 transmits external light. In addition, the substrate 15, the adhesive layer 156, the insulating layer 162, the insulating layer 211, the insulating layer 213, the insulating layer 215, the insulating layer 214, the insulating layer 272, the protective layer 273, the adhesive layer 122 and the substrate 16 have light transmittance to visible light. , the display unit 107 included in the display device 100L transmits external light. Specifically, the display unit 107 included in the display device 100K or the display device 100L can transmit the light 34a emitted from the display unit 37a included in the display device 41a described in the first embodiment. Therefore, the user of the electronic device 10 can see the image displayed on the display unit 37 a shown in Embodiment 1 through the display unit 107 .

In addition, the conductive layer 221 and the conductive layer 223 may be transparent to visible light or reflective to visible light. When the conductive layer 221 and the conductive layer 223 are transparent to visible light, the visible light transmittance of the display portion 107 can be increased. On the other hand, when the conductive layer 221 and the conductive layer 223 are reflective to visible light, it is possible to suppress the incidence of visible light on the semiconductor layer 231 . Therefore, since damage to the semiconductor layer 231 can be reduced, the reliability of the display device 100K or the display device 100L can be improved.

Note that even if a top emission type display device such as the display device 100H or the display device 100I is used, at least a part of the layers constituting the transistor 205 can be made transparent to visible light. At this time, the conductive layer 171 is also transparent to visible light. As described above, the visible light transmittance of the display portion 107 can be improved.

[Display device 100M] The display device 100M shown in FIG. 30 is a modified example of the display device 100J shown in FIG. 27. The main difference between the display device 100M and the display device 100J is that the display device 100M has the same bottom as the display device 100K shown in FIG. emissive display device.

The color layer 183R, the color layer 183G, and the color layer 183B are provided between the light emitting element 63W and the substrate 11b. FIG. 30 shows an example in which the color layer 183R, the color layer 183G, and the color layer 183B are provided between the insulating layer 215 and the insulating layer 214 .

In the display device 100M, a light shielding layer 117 is provided between the substrate 11 b and the transistor 205 . The light shielding layer 117 may be provided in a region that does not overlap the light emitting region of the light emitting element 63W. 30 shows an example in which the light-shielding layer 117 is provided on the substrate 11b, the insulating layer 153 is provided on the light-shielding layer 117, and the transistor 201, the transistor 205, and the like are provided on the insulating layer 153. Note that, as shown in FIG. 30 , the light shielding layer 117 may also be provided in the connection portion 140 and the circuit 164 .

The light shielding layer 117 may also be provided in the display device 100K or the display device 100L. At this time, light emitted from the light emitting element 63R, the light emitting element 63G, and the light emitting element 63B can be suppressed from being reflected by, for example, the substrate 11b and diffused into the display device 100K or the display device 100L. Accordingly, the display device 100K and the display device 100L can be display devices with high display quality. On the other hand, by not providing the light-shielding layer 117, the light extraction efficiency of the light emitted from the light-emitting element 63R, the light-emitting element 63G, and the light-emitting element 63B can be improved.

Compared with the display devices 100A to 100G, the display devices 100H to 100M are less likely to increase the pixel density, but can increase the occupied area of the display portion. Therefore, preferably, the display device 100A to the display device 100G are used for the display device 41 a described in Embodiment Mode 1 and the display device 100H to 100M are used for the display device 41 b. Note that the display device 100A to the display device 100G may also be used for the display device 41b. In addition, the display device 100H to the display device 100M may also be used for the display device 41 a. For example, when the size of the required occupied area of the display unit 37b included in the display device 41b is within the range achievable by the display devices 100A to 100G, the display devices 100A to 100G can be used for the display device 41b. In addition, when the pixel density required for the display unit 37a included in the display device 41a is within the range that can be realized by the display device 100H to the display device 100M, the display device 100H to the display device 100M can be used for the display device 41a.

At least a part of the structural examples shown in this embodiment and the drawings corresponding to these examples can be appropriately combined with other structural examples, drawings, and the like.

At least a part of this embodiment mode can be implemented in combination with other embodiment modes described in this specification as appropriate.

Embodiment 4 In this embodiment, a light emitting element that can be used in a display device according to one embodiment of the present invention will be described with reference to the drawings.

As shown in FIG. 31A , the light emitting element includes an EL layer 763 between a pair of electrodes (a lower electrode 761 and an upper electrode 762 ). The EL layer 763 can be composed of multiple layers such as the layer 780 , the light emitting layer 771 , and the layer 790 .

The light-emitting layer 771 contains at least a light-emitting substance.

In the case where the lower electrode 761 and the upper electrode 762 are an anode and a cathode, respectively, the layer 780 includes a layer containing a substance with a high hole injection property (hole injection layer), a layer containing a substance with a high hole transport property (hole injection layer), and a layer with a high hole transport property (hole injection layer). transport layer) and a layer containing a substance with high electron barrier property (electron barrier layer). In addition, the layer 790 includes a layer containing a substance with high electron injection property (electron injection layer), a layer containing a substance with high electron transport property (electron transport layer), and a layer containing a substance with high hole blocking property (hole barrier layer). ) of one or more. When the lower electrode 761 and the upper electrode 762 are respectively a cathode and an anode, the structures of the layer 780 and the layer 790 are reversed from the above.

A structure including layer 780, light-emitting layer 771, and layer 790 disposed between a pair of electrodes can be used as a single light-emitting unit, and the structure of FIG. 31A is referred to as a single structure in this specification.

In addition, FIG. 31B shows a modified example of the EL layer 763 included in the light emitting element shown in FIG. 31A . Specifically, the light-emitting element shown in FIG. 31B includes a layer 781 on the lower electrode 761, a layer 782 on the layer 781, a light-emitting layer 771 on the layer 782, a layer 791 on the light-emitting layer 771, a layer 792 on the layer 791, and Upper electrode 762 on layer 792 .

In the case where the lower electrode 761 and the upper electrode 762 are respectively an anode and a cathode, for example, the layer 781, the layer 782, the layer 791 and the layer 792 may be respectively a hole injection layer, a hole transport layer, an electron transport layer and an electron injection layer . In addition, in the case where the lower electrode 761 and the upper electrode 762 are the cathode and the anode respectively, the layer 781, the layer 782, the layer 791 and the layer 792 can be respectively an electron injection layer, an electron transport layer, a hole transport layer and a hole injection layer . By employing the above-mentioned layer structure, carriers can be efficiently injected into the light emitting layer 771 , thereby improving the efficiency of recombination of carriers in the light emitting layer 771 .

In addition, as shown in FIG. 31C and FIG. 31D , the structure in which multiple light-emitting layers (light-emitting layer 771 , light-emitting layer 772 , and light-emitting layer 773 ) are provided between layers 780 and 790 is also a modified example of a single structure. Note that although FIG. 31C and FIG. 31D show an example including three light-emitting layers, the number of light-emitting layers in a light-emitting element having a single structure may be two or four or more. In addition, a light-emitting element having a single structure may include a buffer layer between two light-emitting layers.

In addition, as shown in FIG. 31E and FIG. 31F , in this specification and the like, a structure in which a plurality of light-emitting units (light-emitting unit 763a and light-emitting unit 763b ) are connected in series via a charge generation layer 785 (also referred to as an intermediate layer) is referred to as a series connection structure. structure. In addition, the series structure may also be referred to as a laminated structure. By employing a tandem structure, a light emitting element capable of emitting light with high luminance can be realized. In addition, since the series structure can reduce the current required to obtain the same luminance compared with the single structure, reliability can be improved.

31D and 31F show examples in which a display device includes a layer 764 overlapping a light-emitting element. FIG. 31D shows an example in which the layer 764 is overlaid on the light-emitting element shown in FIG. 31C , and FIG. 31F shows an example in which the layer 764 is overlaid on the light-emitting element shown in FIG. 31E . In FIGS. 31D and 31F , the upper electrode 762 uses a conductive film that transmits visible light to extract light to the upper electrode 762 side.

One or both of a color conversion layer and a color filter (color layer) can be used as the layer 764 .

In FIGS. 31C and 31D , luminescent substances that emit light of the same color, or even the same luminescent substance, may be used for the light-emitting layer 771 , the light-emitting layer 772 , and the light-emitting layer 773 . For example, a light-emitting substance that emits blue light may be used for the light-emitting layer 771 , the light-emitting layer 772 , and the light-emitting layer 773 . With regard to sub-pixels that exhibit blue light, blue light emitted by the light emitting element can be extracted. In addition, for the sub-pixels that emit red light and the sub-pixels that emit green light, by providing a color conversion layer as the layer 764 shown in FIG. For red light or green light. In addition, it is preferable to use both a color conversion layer and a color layer as the layer 764 . A part of the light emitted by the light-emitting element may be transmitted without being converted by the color conversion layer. When the light passing through the color conversion layer is extracted through the color layer, the color layer can absorb light other than the desired color light to improve the color purity of the light presented by the sub-pixel.

In addition, in FIG. 31C and FIG. 31D , light-emitting substances that emit lights of different colors may be used for the light-emitting layer 771 , the light-emitting layer 772 , and the light-emitting layer 773 . When the light emitted by each of the light emitting layer 771, the light emitting layer 772 and the light emitting layer 773 is in a complementary color relationship, white light emission can be obtained. For example, a light-emitting element having a single structure preferably includes a light-emitting layer containing a light-emitting substance emitting blue light and a light-emitting layer containing a light-emitting substance emitting visible light longer in wavelength than blue.

A color filter may also be provided as the layer 764 shown in FIG. 31D. By passing the white light through the color filter, the light of the desired color can be obtained.

For example, in the case where a light-emitting element having a single structure includes three light-emitting layers, it is preferable to include a light-emitting layer containing a light-emitting substance emitting red (R) light, a light-emitting layer containing a light-emitting substance emitting green (G) light, and Luminescent layer of luminescent substance that emits blue (B) light. As the stacking order of the light emitting layer, the order of stacking R, G, and B sequentially from the anode side, or the stacking sequence of R, B, and G from the anode side, etc., can be employed. At this time, a buffer layer may be provided between R and G or B.

In addition, for example, in the case where a light-emitting element having a single structure includes two light-emitting layers, it is preferable to use a light-emitting layer containing a light-emitting substance emitting blue (B) light and a light-emitting substance containing a light-emitting substance emitting yellow (Y) light. The structure of the light-emitting layer. This structure is sometimes referred to as the BY single structure.

The white light-emitting element preferably contains two or more kinds of light-emitting substances. In order to obtain white light emission, it is sufficient to select two or more kinds of light emitting substances whose light emission is in a complementary color relationship. For example, by making the emission color of the first light-emitting layer and the light-emission color of the second light-emitting layer in a complementary color relationship, it is possible to obtain a light-emitting element that emits white light as a whole. The same applies to a light-emitting element including three or more light-emitting layers.

Note that the layer 780 and the layer 790 in FIG. 31C and FIG. 31D may each independently adopt a laminated structure composed of two or more layers as shown in FIG. 31B .

In FIG. 31E and FIG. 31F , luminescent substances that emit light of the same color, or even the same luminescent substance, may be used for the light-emitting layer 771 and the light-emitting layer 772 . For example, a light-emitting substance that emits blue light may be used for the light-emitting layer 771 and the light-emitting layer 772 in the light-emitting elements included in the sub-pixels that emit light of each color. With regard to sub-pixels that exhibit blue light, blue light emitted by the light emitting element can be extracted. In addition, for the sub-pixels that emit red light and the sub-pixels that emit green light, by providing a color conversion layer as the layer 764 shown in FIG. For red light or green light. In addition, it is preferable to use both a color conversion layer and a color layer as the layer 764 .

In addition, when the light-emitting element with the structure shown in FIG. 31E or FIG. 31F is used for sub-pixels representing each color, different light-emitting substances may be used for each sub-pixel. Specifically, in the light-emitting element included in the sub-pixel that emits red light, a light-emitting substance that emits red light may be used for the light-emitting layer 771 and the light-emitting layer 772 . Similarly, in the light-emitting element included in the sub-pixel that emits green light, a light-emitting substance that emits green light may also be used for the light-emitting layer 771 and the light-emitting layer 772 . In the light-emitting element included in the sub-pixel that emits blue light, a light-emitting substance that emits blue light may be used for the light-emitting layer 771 and the light-emitting layer 772 . It can be said that a display device having such a structure uses light-emitting elements having a tandem structure and has an SBS structure. Accordingly, there are advantages of both the tandem structure and the SBS structure. Thereby, high-intensity light emission can be realized and a highly reliable light-emitting element can be realized.

In addition, in FIG. 31E and FIG. 31F , light-emitting substances that emit light of different colors may be used for the light-emitting layer 771 and the light-emitting layer 772 . When the light emitted from the light emitting layer 771 and the light emitted from the light emitting layer 772 are in a complementary color relationship, white light emission can be obtained. A color filter may also be provided as the layer 764 shown in FIG. 31F. By passing the white light through the color filter, the light of the desired color can be obtained.

Note that although FIG. 31E and FIG. 31F show examples in which the light emitting unit 763a includes a light emitting layer 771 and the light emitting unit 763b includes a light emitting layer 772, they are not limited thereto. Each of the light emitting unit 763a and the light emitting unit 763b may include two or more light emitting layers.

In addition, although FIG. 31E and FIG. 31F illustrate a light emitting element including two light emitting units, the present invention is not limited thereto. The light emitting element may also include three or more light emitting units. Note that the structure including two light emitting units and the structure including three light emitting units may also be referred to as a two-stage series structure and a three-stage series structure, respectively.

In addition, in FIG. 31E and FIG. 31F , the light emitting unit 763a includes a layer 780a, a light emitting layer 771, and a layer 790a, and the light emitting unit 763b includes a layer 780b, a light emitting layer 772, and a layer 790b.

Where lower electrode 761 and upper electrode 762 are an anode and a cathode, respectively, layers 780a and 780b each include one or more of a hole injection layer, a hole transport layer, and an electron barrier layer. In addition, layer 790a and layer 790b each include one or more of an electron injection layer, an electron transport layer, and a hole barrier layer. When the lower electrode 761 and the upper electrode 762 are a cathode and an anode, respectively, the structures of the layers 780a and 790a are reversed from the above, and the structures of the layers 780b and 790b are also reversed.

In the case where the lower electrode 761 and the upper electrode 762 are an anode and a cathode, respectively, for example, the layer 780a includes a hole injection layer and a hole transport layer on the hole injection layer, and may also include an electron barrier on the hole transport layer. layer. In addition, the layer 790a includes an electron transport layer, and may further include a hole barrier layer between the light emitting layer 771 and the electron transport layer. In addition, layer 780b includes a hole transport layer, and may also include an electron barrier layer on the hole transport layer. In addition, the layer 790b includes an electron transport layer and an electron injection layer on the electron transport layer, and may further include a hole barrier layer between the light emitting layer 772 and the electron transport layer. In the case where the lower electrode 761 and the upper electrode 762 are respectively a cathode and an anode, for example, the layer 780a includes an electron injection layer and an electron transport layer on the electron injection layer, and may further include a hole barrier layer on the electron transport layer. In addition, the layer 790a includes a hole transport layer, and may further include an electron barrier layer between the light emitting layer 771 and the hole transport layer. In addition, layer 780b includes an electron transport layer, and may further include a hole barrier layer on the electron transport layer. In addition, the layer 790b includes a hole transport layer and a hole injection layer on the hole transport layer, and may further include an electron barrier layer between the light emitting layer 772 and the hole transport layer.

In addition, when manufacturing a light-emitting element having a tandem structure, two light-emitting units are laminated with the charge generation layer 785 interposed therebetween. The charge generation layer 785 has at least a charge generation region. The charge generating layer 785 has a function of injecting electrons into one of the two light emitting cells and injecting holes into the other when a voltage is applied between the pair of electrodes.

In addition, as an example of a light-emitting element having a series structure, the structures shown in FIGS. 32A to 32C can be mentioned.

FIG. 32A shows a structure including three light emitting units. In FIG. 32A , a plurality of light-emitting units (a light-emitting unit 763 a , a light-emitting unit 763 b , and a light-emitting unit 763 c ) are connected in series with each other via a charge generation layer 785 . In addition, the light emitting unit 763a includes a layer 780a, a light emitting layer 771, and a layer 790a, the light emitting unit 763b includes a layer 780b, a light emitting layer 772, and a layer 790b, and the light emitting unit 763c includes a layer 780c, a light emitting layer 773, and a layer 790c. Note that layer 780c can take a structure that can be used for layer 780a and layer 780b, and layer 790c can take a structure that can be used for layer 790a and layer 790b.

In FIG. 32A, the luminescent layer 771, the luminescent layer 772, and the luminescent layer 773 preferably include luminescent substances that emit light of the same color. Specifically, the following structure can be adopted: a structure in which the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 773 all contain red (R) light-emitting substances (the so-called R\R\R three-stage series structure); the light-emitting layer 771, the light-emitting layer 772 and the luminescent layer 773 all contain green (G) luminescent substances (so-called G\G\G three-level series structure); or the luminescent layer 771, luminescent layer 772 and luminescent layer 773 all contain blue (B) luminescent substances. (The so-called B\B\B three-stage series structure). Note that "a\b" means that a light-emitting unit including a light-emitting substance that emits light of a is provided with a light-emitting unit that includes a light-emitting substance that emits light of b via a charge generation layer, and a and b represent colors.

In addition, in FIG. 32A , light-emitting substances that emit light of different colors may be used for some or all of the light-emitting layer 771 , the light-emitting layer 772 , and the light-emitting layer 773 . As a combination of the light-emitting colors of the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 773, for example, a structure in which any two are blue (B) and the remaining one is yellow (Y) and any one of them is red ( R), the other in green (G) and the remaining one in blue (B).

Note that the structure of the light emitting unit is not limited to the structure shown in Fig. 32A. For example, as shown in FIG. 32B , a tandem-type light-emitting element in which light-emitting units including a plurality of light-emitting layers are stacked may be used. In FIG. 32B , two light emitting units (light emitting unit 763 a and light emitting unit 763 b ) are connected in series via a charge generation layer 785 . In addition, the light emitting unit 763a includes a layer 780a, a light emitting layer 771a, a light emitting layer 771b, a light emitting layer 771c, and a layer 790a, and the light emitting unit 763b includes a layer 780b, a light emitting layer 772a, a light emitting layer 772b, a light emitting layer 772c, and a layer 790b.

In FIG. 32B , for the light-emitting layer 771 a , the light-emitting layer 771 b , and the light-emitting layer 771 c , light-emitting substances in a complementary color relationship are selected, so that the light-emitting unit 763 a has a structure capable of realizing white light emission (W). In addition, for the light-emitting layer 772a, the light-emitting layer 772b, and the light-emitting layer 772c, light-emitting substances in a complementary color relationship are also selected, so that the light-emitting unit 763b has a structure capable of realizing white light emission (W). That is to say, the structure shown in FIG. 32B is a W\W two-stage series structure. Note that there is no particular limitation on the stacking order of the luminescent substances in a complementary color relationship. The implementer can properly select the most suitable stacking sequence. Although not shown in the figure, it is also possible to adopt a W\W\W three-stage series structure or a four-stage or more series structure.

In addition, in the case of using a light-emitting element with a series structure, it can be mentioned: B\Y or Y\B two-stage series connection including a light-emitting unit that emits yellow (Y) light and a light-emitting unit that emits blue (B) light Structure; R·G\B or B\R·G two-stage series structure including a light-emitting unit emitting red (R) light and green (G) light and a light-emitting unit emitting blue (B) light; The B\Y\B three-stage series structure of a light-emitting unit emitting yellow (B) light, a light-emitting unit emitting yellow (Y) light, and a light-emitting unit emitting blue (B) light; A light-emitting unit, a light-emitting unit that emits yellow-green (YG) light, and a light-emitting unit that emits blue (B) light in a B\YG\B three-stage series structure; and sequentially includes a light-emitting unit that emits blue (B) light, emits Green (G) light-emitting unit and blue (B) light-emitting unit B\G\B three-stage series structure, etc. Note that "a·b" indicates that one light-emitting unit includes a light-emitting substance that emits light of a and a light-emitting substance that emits light of b.

In addition, as shown in FIG. 32C, a light-emitting unit including one light-emitting layer and a light-emitting unit including a plurality of light-emitting layers may also be combined.

Specifically, in the structure shown in FIG. 32C , a plurality of light-emitting units (light-emitting unit 763 a , light-emitting unit 763 b , and light-emitting unit 763 c ) are connected in series with each other via the charge generation layer 785 . In addition, the light-emitting unit 763a includes a layer 780a, a light-emitting layer 771, and a layer 790a, the light-emitting unit 763b includes a layer 780b, a light-emitting layer 772a, a light-emitting layer 772b, a light-emitting layer 772c, and a layer 790b, and the light-emitting unit 763c includes a layer 780c, a light-emitting layer 773, and a layer 790c.

For example, in the structure shown in Figure 32C, a B\R·G·YG\B three-stage series structure can be adopted, where the light-emitting unit 763a is a light-emitting unit that emits blue (B) light, and the light-emitting unit 763b is a light-emitting unit that emits red (R ) light, green (G) light, and yellow-green (YG) light, and the light emitting unit 763c is a light emitting unit that emits blue (B) light.

For example, the number of stacked layers and the order of colors of the light-emitting units include a two-stage structure in which B and Y are stacked from the anode side, a two-stage structure in which B and light-emitting units are stacked, and a three-stage structure in which B, Y, and B are stacked. , The tertiary structure of stacking B, X and B. As the number of stacked layers and color order of the light emitting layers in the light emitting unit X, a two-layer structure in which R and Y are stacked from the anode side, a two-layer structure in which R and G are stacked, a two-layer structure in which G and R are stacked, a stacked A three-layer structure of G, R, and G, or a three-layer structure of stacking R, G, and R, etc. In addition, other layers may be provided between the two light emitting layers.

Next, materials that can be used for the light-emitting element will be described.

A conductive film that transmits visible light is used as an electrode on the light extraction side of the lower electrode 761 and the upper electrode 762 . In addition, it is preferable to use a conductive film that reflects visible light as the electrode on the side where light is not extracted. In addition, when the display device includes a light-emitting element that emits infrared light, it is preferable to use a conductive film that transmits visible light and infrared light as the electrode on the light extraction side and use a conductive film that reflects visible light and infrared light as the electrode that does not extract light.

In addition, a conductive film that transmits visible light may be used for the electrode on the side where light is not extracted. In this case, it is preferable to arrange the electrode between the reflective layer and the EL layer 763 . In other words, light emitted from the EL layer 763 can also be reflected by the reflective layer and extracted from the display device.

As a material for forming a pair of electrodes of a light-emitting element, metals, alloys, conductive compounds, mixtures thereof, and the like can be suitably used. Specific examples of such materials include aluminum, magnesium, titanium, chromium, manganese, iron, cobalt, nickel, copper, gallium, zinc, indium, tin, molybdenum, tantalum, tungsten, palladium, gold, platinum, silver, and yttrium. And metals such as neodymium and alloys combining them appropriately. In addition, examples of the material include indium tin oxide, silicon-containing indium tin oxide, indium zinc oxide, tungsten-containing indium zinc oxide, and the like. In addition, examples of the material include an alloy containing aluminum, nickel, and lanthanum (Al—Ni—La), an alloy containing silver and magnesium, an alloy of silver, palladium, and copper (APC), and the like. In addition, as the material, elements belonging to Group 1 or Group 2 of the periodic table (for example, lithium, cesium, calcium, strontium), europium, ytterbium and other rare earth metals not listed above can be mentioned, and these can be combined appropriately. alloys and graphene, etc.

The light emitting element preferably adopts a microcavity structure. Therefore, for example, one of the pair of electrodes included in the light-emitting element is preferably an electrode that is transparent and reflective to visible light (transflective electrode), and the other is preferably an electrode that is reflective to visible light (reflective electrode). When the light emitting element has a microcavity structure, light emission from the light emitting layer can be resonated between two electrodes, and light emitted from the light emitting element can be enhanced.

In addition, the semi-transmissive-semi-reflective electrode may have, for example, a laminated structure of a conductive layer that can be used as a reflective electrode and a conductive layer that can be used as an electrode that transmits visible light (also referred to as a transparent electrode).

The light transmittance of the transparent electrode is above 40%. For example, an electrode having a transmittance of 40% or more for visible light (light having a wavelength of 400 nm or more and less than 750 nm) is preferably used as the transparent electrode of the light emitting element. The visible light reflectance of the transflective-semi-reflective electrode is not less than 10% and not more than 95%, preferably not less than 30% and not more than 80%. The visible light reflectance of the reflective electrode is not less than 40% and not more than 100%, preferably not less than 70% and not more than 100%. In addition, the resistivity of these electrodes is preferably 1×10 ^-2 Ωcm or less.

The light emitting element includes at least a light emitting layer. In addition, as a layer other than the light-emitting layer, the light-emitting element may also include a substance with high hole-injection property, a substance with high-hole-transport property, a hole-blocking material, a substance with high electron-transport property, an electron-blocking material, an electron-injection property A layer of high material or bipolar material (substance with high electron transport property and high hole transport property). For example, the light-emitting element may include one or more of a hole injection layer, a hole transport layer, a hole barrier layer, a charge generation layer, an electron barrier layer, an electron transport layer, and an electron injection layer in addition to the light-emitting layer.

A light-emitting element may use a low-molecular compound or a high-molecular compound, and may also contain an inorganic compound. The layers constituting the light-emitting element can be formed by methods such as evaporation (including vacuum evaporation), transfer, printing, inkjet, or coating.

The luminescent layer contains one or more luminescent substances. As the light-emitting substance, a substance showing a light-emitting color such as blue, purple, blue-violet, green, yellow-green, yellow, orange, or red is suitably used. In addition, as a light-emitting substance, a substance emitting near-infrared light can also be used.

Examples of the luminescent substance include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenyl derivatives, fennel derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, and dibenzoquinone derivatives. Ozoline derivatives, quinoline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives and naphthalene derivatives, etc.

As the phosphorescent material, for example, organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, a 1H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton, and Phenylpyridine derivatives with electron-withdrawing groups are ligands for organometallic complexes (especially iridium complexes), platinum complexes, rare earth metal complexes, etc.

The light-emitting layer may contain one or more organic compounds (host material, auxiliary material, etc.) in addition to the light-emitting substance (guest material). As one or more organic compounds, one or both of a substance with high hole transport property (hole transport material) and a substance with high electron transport property (electron transport material) can be used. As the hole transport material, the following materials with high hole transport properties that can be used for the hole transport layer can be used. As the electron-transporting material, the following materials having high electron-transporting properties that can be used for the electron-transporting layer can be used. Furthermore, as one or more organic compounds, bipolar materials or TADF materials can also be used.

For example, the light-emitting layer preferably comprises a combination of a phosphorescent material, a hole transport material that easily forms an excimer complex, and an electron transport material. By adopting such a structure, the luminescence of ExTET (Exciplex-Triplet Energy Transfer: Exciplex-Triplet Energy Transfer) utilizing the energy transfer from the exciplex to the light-emitting substance (phosphorescent material) can be efficiently obtained . By selecting a combination to form an exciplex that emits light overlapping with the wavelength of the absorption band on the lowest energy side of the luminescent substance, energy transfer can be smoothed and luminescence can be efficiently obtained. By adopting the above-mentioned structure, high efficiency, low-voltage driving, and long life of the light-emitting element can be simultaneously realized.

The hole injection layer is a layer made of a material with high hole injection property that injects holes from the anode into the hole transport layer. Examples of materials with high hole injection properties include aromatic amine compounds, composite materials including hole transport materials and acceptor materials (electron acceptor materials), and the like.

As the hole transport material, the following materials with high hole transport properties that can be used for the hole transport layer can be used.

As the acceptor material, for example, oxides of metals belonging to Groups 4 to 8 in the periodic table of elements can be used. Specifically, molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide are mentioned. Molybdenum oxide is particularly preferred because it is also stable in the atmosphere, has low hygroscopicity, and is easy to handle. In addition, organic acceptor materials containing fluorine can also be used. In addition, organic acceptor materials such as quinodimethane derivatives, chloranil derivatives, and hexaazatriphenyl derivatives can also be used.

For example, a material containing a hole transport material and an oxide (typically molybdenum oxide) of the metal belonging to Groups 4 to 8 of the periodic table may be used as a material having a high hole injection property.

The hole transport layer is a layer that transports holes injected from the anode through the hole injection layer to the light emitting layer. The hole transport layer is a layer containing a hole transport material. As the hole transport material, it is preferable to use a substance having a hole mobility of 1×10 ⁻⁶ cm ² /Vs or higher. Note that substances other than the above may be used as long as the hole-transport property is higher than the electron-transport property. As the hole transport material, it is preferable to use hole transport properties such as heteroaromatic compounds rich in π electrons (such as carbazole derivatives, thiophene derivatives, or furan derivatives) or aromatic amines (compounds containing an aromatic amine skeleton). high material.

The electron barrier layer is provided so as to be in contact with the light emitting layer. The electron barrier layer is a layer having hole transport properties and containing a material capable of blocking electrons. Among the above-mentioned hole transport materials, materials having electron blocking properties can be used for the electron barrier layer.

The electron barrier layer has hole transport properties, so it can also be called a hole transport layer. In addition, the electron-blocking layer in the hole transport layer may also be referred to as an electron barrier layer.

The electron transport layer is a layer that transports electrons injected from the cathode through the electron injection layer to the light emitting layer. The electron transport layer is a layer containing an electron transport material. As the electron transport material, it is preferable to use a substance having an electron mobility of 1×10 ⁻⁶ cm ² /Vs or higher. Note that substances other than the above may be used as long as the electron-transport property is higher than the hole-transport property. As the electron transport material, metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having a oxazole skeleton, or metal complexes having a thiazole skeleton can be used, and Diazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoline derivatives, and quinoline derivatives can be used. Materials with high electron transport properties such as oxoline derivatives, dibenzoquinoline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, or nitrogen-containing heteroaromatic compounds, such as π-electron-deficient heteroaromatic compounds.

The hole barrier layer is provided so as to be in contact with the light emitting layer. The hole barrier layer is a layer having electron transport properties and containing a material capable of blocking holes. Among the above-mentioned electron transport materials, materials having hole barrier properties can be used for the hole barrier layer.

The hole barrier layer has electron transport properties, so it can also be called an electron transport layer. In addition, the layer having hole blocking properties in the electron transport layer may also be referred to as a hole barrier layer.

The electron injection layer is a layer containing a material with high electron injection property that injects electrons from the cathode into the electron transport layer. As a material having a high electron injection property, an alkali metal, an alkaline earth metal, or a compound thereof can be used. As a material with high electron injection properties, a composite material including an electron transport material and a donor material (electron donor material) can also be used.

In addition, it is preferable that the difference between the LUMO energy level of the material with high electron injectability and the work function value of the material used for the cathode is small (specifically, 0.5 eV or less).

For example, lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF _x , x is any number), 8-(hydroxyoxaline) lithium (abbreviation: Liq), 2-(2-pyridyl) lithium phenoxide (abbreviation: LiPP), 2-(2-pyridyl)-3-hydroxypyridinolato (pyridinolato) lithium (abbreviation: LiPPy), 4-phenyl-2-( 2-pyridyl) Lithium phenate (abbreviation: LiPPP), lithium oxide (LiO _x ) or cesium carbonate and other alkali metals, alkaline earth metals or their compounds. In addition, the electron injection layer may have a laminated structure of two or more layers. As this laminated structure, for example, a structure in which lithium fluoride is used as the first layer and ytterbium is provided as the second layer is mentioned.

The electron injection layer may also contain an electron transport material. For example, a compound having an unshared electron pair and having an electron-deficient heteroaromatic ring can be used for the electron transport material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridoxine ring) and a triazine ring can be used.

The lowest unoccupied molecular orbital (LUMO: Lowest Unoccupied Molecular Orbital) energy level of an organic compound having an unshared electron pair is preferably not less than -3.6 eV and not more than -2.3 eV. In general, the highest occupied molecular orbital (HOMO: Highest Occupied Molecular Orbital) energy level and LUMO of organic compounds can be estimated by CV (cyclic voltammetry), photoelectron spectroscopy, absorption spectroscopy or inverse photoelectron spectroscopy. Energy level.

For example, 4,7-diphenyl-1,10-phenanthroline (abbreviation: BPhen), 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline can be phenoline (abbreviation: NBPhen), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), diquinoline[2,3- a: 2',3'-c]phenazine (abbreviation: HATNA) or 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5- Triazine (abbreviation: TmPPPyTz) and the like are used for organic compounds with non-shared electron pairs. In addition, NBPhen has a high glass transition point (Tg) compared to BPhen, resulting in high heat resistance.

As described above, the charge generation layer has at least a charge generation region. The charge generation region preferably includes an acceptor material, for example, preferably includes a hole transport material and an acceptor material that can be applied to the above-mentioned hole injection layer.

In addition, the charge generation layer preferably includes a layer containing a material with high electron injection properties. This layer may also be referred to as an electron injection buffer layer. The electron injection buffer layer is preferably disposed between the charge generation region and the electron transport layer. By providing the electron injection buffer layer, the injection energy barrier between the charge generation region and the electron transport layer can be reduced, so the electrons generated in the charge generation region can be easily injected into the electron transport layer.

The electron injection buffer layer preferably contains an alkali metal or an alkaline earth metal, for example, may contain an alkali metal compound or an alkaline earth metal compound. Specifically, the electron injection buffer layer preferably contains an inorganic compound containing an alkali metal and oxygen or an inorganic compound containing an alkaline earth metal and oxygen, more preferably an inorganic compound containing lithium and oxygen (for example, lithium oxide ( _Li2O )). Besides, as the electron injection buffer layer, materials applicable to the above-mentioned electron injection layer can be appropriately used.

The charge generation layer preferably includes a layer containing a material with high electron transport properties. This layer may also be referred to as an electronic relay layer. The electron relay layer is preferably disposed between the charge generation region and the electron injection buffer layer. When the charge generation layer does not include the electron injection buffer layer, the electron relay layer is preferably disposed between the charge generation region and the electron transport layer. The electron relay layer has the function of suppressing the interaction of the charge generation region with the electron injection buffer layer (or electron transport layer) and smoothly transferring electrons.

As the electron relay layer, it is preferable to use phthalocyanine materials such as phthalocyanine copper (II) (abbreviation: CuPc) or metal complexes having metal-oxygen bonding and aromatic ligands.

Note that sometimes, the above-described charge generation region, electron injection buffer layer, and electron relay layer cannot be clearly distinguished, for example, by cross-sectional shape or characteristics.

In addition, the charge generating layer may also include a donor material instead of an acceptor material. For example, a layer containing an electron transport material and a donor material applicable to the above-mentioned electron injection layer may also be included as the charge generation layer.

When stacking light-emitting units, by providing a charge generation layer between two light-emitting units, it is possible to suppress an increase in driving voltage.

At least a part of the structural examples shown in this embodiment and the drawings corresponding to these examples can be appropriately combined with other structural examples, drawings, and the like.

At least a part of this embodiment mode can be implemented in combination with other embodiment modes described in this specification as appropriate.

10: Electronic device 11a: Substrate 11b: Substrate 12a: layer 12b: layer 13a: Substrate 13b: Substrate 14: Adhesive layer 15: Substrate 16: Substrate 27a: Pixel 27b: Pixel 27: Pixels 31: shell 32: Fixing tool 34a: light 34aB: light 34aG: light 34aR: light 34b: light 34bB: light 34bG: light 34bR: light 34c: light 34: light 35L: lens 35R: lens 35: lens 36L: frame 36R: mirror frame 36: mirror frame 37a: display part 37aL: display part 37aR: display part 37b: display part 37bL: display part 37bR: display unit 37c: display part 37L: display part 37R: display part 37: Display part 40: layers 41a: display device 41aL: display device 41aR: display device 41b: display device 41bL: display device 41bR: display device 42a: Gate driver circuit 42aL: Gate driver circuit 42aR: Gate driver circuit 42b: Gate driver circuit 42bL: Gate driver circuit 42bR: Gate driver circuit 43a: Source driver circuit 43aL: Source driver circuit 43aR: Source driver circuit 43b: Source driver circuit 43bL: Source driver circuit 43bR: Source driver circuit 44: light 47L: area 47R: Area 47: area 50: layers 51: Pixel circuit 57: Communication circuit 59: Control circuit 60: layers 61B: Light emitting element 61G: Light emitting element 61R: Light emitting element 61W: light emitting element 61: Light emitting element 63B: Light emitting element 63G: Light emitting element 63R: Light emitting element 63W: light emitting element 63:Light-emitting element 100A: Display device 100B: display device 100C: display device 100D: display device 100E: display device 100F: Display device 100G: display device 100H: display device 100I: display device 100J: display device 100K: display device 100L: display device 100M: display device 107: display part 109: pixels 110a: sub-pixel 110b: sub-pixel 110c: sub-pixel 110d: sub-pixel 110e: sub-pixel 117: shading layer 120: Substrate 122: Adhesive layer 124a: pixel 124b: pixel 140: connection part 153: insulation layer 156: Adhesive layer 162: insulation layer 164: circuit 165: Wiring 166: conductive layer 168: conductive layer 171: Conductive layer 172B: EL layer 172Bf:EL film 172G:EL layer 172Gf:EL film 172R: EL layer 172Rf:EL film 172W: EL layer 172:EL layer 173: conductive layer 174: Shared layer 176:IC 177: FPC 180B: Photoresist mask 180G: photoresist mask 180R: photoresist mask 181B: FMM 181G:FMM 181R:FMM 181:FMM 183B: color layer 183G: color layer 183R: color layer 183: color layer 201: Transistor 204: connection part 205: Transistor 209: Transistor 210: Transistor 211: insulating layer 213: insulation layer 214: insulating layer 215: insulating layer 218: insulation layer 221: conductive layer 222a: conductive layer 222b: conductive layer 223: conductive layer 225: insulating layer 231i: channel formation area 231n: low resistance area 231: semiconductor layer 240: Capacitor 241: conductive layer 242: Connection layer 243: insulating layer 245: conductive layer 251: conductive layer 252: conductive layer 254: insulating layer 255a: insulating layer 255b: insulating layer 255c: insulating layer 256: plug 261: insulating layer 262: insulating layer 263: insulating layer 264: insulating layer 265: insulating layer 270B: sacrificial layer 270Bf: sacrificial film 270G: sacrificial layer 270Gf: sacrificial film 270R: sacrificial layer 270Rf: sacrificial film 270: sacrificial layer 271f: Protective film 271: protective layer 272: insulation layer 273: protective layer 274a: conductive layer 274b: Conductive layer 274: plug 275: plug 276: insulating layer 277: microlens array 278f: insulating film 278: insulation layer 279B: sacrificial layer 279Bf: sacrificial film 279G: sacrificial layer 279Gf: sacrificial film 279R: sacrificial layer 279Rf: sacrificial film 280: display module 290: FPC 301A: Substrate 301B: Substrate 301: Substrate 310A: Transistor 310B: Transistor 310: Transistor 311: conductive layer 312: low resistance area 313: insulating layer 314: insulating layer 315: component separation layer 320A: Transistor 320B: Transistor 320: Transistor 321: semiconductor layer 323: insulating layer 324: conductive layer 325: conductive layer 326: insulating layer 327: conductive layer 328: insulating layer 329: insulating layer 331: Substrate 332: insulating layer 335: insulating layer 336: insulating layer 341: conductive layer 342: conductive layer 343: plug 344: insulating layer 345: insulating layer 346: insulating layer 347: Bump 348: Adhesive layer 363: layer 761: lower electrode 762: Upper electrode 763a: Lighting unit 763b: Lighting unit 763c: Lighting unit 763:EL layer 764: layer 771a: luminous layer 771b: Emissive layer 771c: luminous layer 771: luminous layer 772a: luminous layer 772b: luminous layer 772c: luminous layer 772: luminescent layer 773: luminous layer 780a: layers 780b: layer 780c: layers 780: layer 781: layer 782: layer 785: Charge generation layer 790a: layers 790b: layer 790c: layers 790: layer 791: layer 792: layer

[ Fig. 1A ] is a perspective view showing a structural example of an electronic device. [ Fig. 1B ] is a perspective view showing a structural example of a display unit. [ FIG. 2A ] to [ FIG. 2C ] are cross-sectional views showing structural examples of the display device. [ FIG. 3A ] to [ FIG. 3C ] are cross-sectional views showing structural examples of the display device. [ FIG. 4A ] and [ FIG. 4B ] are cross-sectional views showing structural examples of a display device. [ FIG. 5A ] and [ FIG. 5B ] are block diagrams showing a configuration example of a display device. [FIG. 6A] and [FIG. 6B] are perspective views showing a configuration example of a display device. [ Fig. 7 ] is a perspective view showing a structural example of a display device. [ Fig. 8 ] is a block diagram showing a structural example of an electronic device. [ FIG. 9A ] to [ FIG. 9C ] are cross-sectional views showing structural examples of the display device. [ FIG. 10A ] to [ FIG. 10C ] are cross-sectional views showing structural examples of the display device. [ FIG. 11A ] to [ FIG. 11D ] are cross-sectional views illustrating an example of a method of manufacturing a display device. [ FIG. 12A ] to [ FIG. 12F ] are cross-sectional views illustrating an example of a method of manufacturing a display device. [ FIG. 13A ] to [ FIG. 13D ] are cross-sectional views illustrating an example of a method of manufacturing a display device. [ FIG. 14A ] to [ FIG. 14D ] are cross-sectional views illustrating an example of a manufacturing method of a display device. [ FIG. 15A ] to [ FIG. 15G ] are plan views showing structural examples of pixels. [ FIG. 16A ] to [ FIG. 16K ] are plan views showing structural examples of pixels. [ Fig. 17 ] is a perspective view showing a structural example of a display module. [ FIG. 18A ] and [ FIG. 18B ] are cross-sectional views showing structural examples of a display device. [ Fig. 19 ] is a cross-sectional view showing a structural example of a display device. [ Fig. 20 ] is a cross-sectional view showing a structural example of a display device. [ Fig. 21 ] is a cross-sectional view showing a structural example of a display device. [ Fig. 22 ] is a cross-sectional view showing a structural example of a display device. [ Fig. 23 ] is a cross-sectional view showing a structural example of a display device. [ Fig. 24 ] is a perspective view showing a structural example of a display device. [ Fig. 25A ] is a cross-sectional view showing a structural example of a display device. [ FIG. 25B ] and [ FIG. 25C ] are cross-sectional views showing structural examples of transistors. [ Fig. 26 ] is a cross-sectional view showing a structural example of a display device. [ Fig. 27 ] is a cross-sectional view showing a structural example of a display device. [ Fig. 28 ] is a cross-sectional view showing a structural example of a display device. [ Fig. 29 ] is a cross-sectional view showing a structural example of a display device. [ Fig. 30 ] is a cross-sectional view showing a structural example of a display device. [ FIG. 31A ] to [ FIG. 31F ] are cross-sectional views showing structural examples of light emitting elements. [ FIG. 32A ] to [ FIG. 32C ] are cross-sectional views showing structural examples of light emitting elements.

11a: Substrate

11b: Substrate

12a: layer

12b: layer

13a: Substrate

34a: light

34b: light

37: Display part

37a: display part

37b: display part

41a: display device

41b: display device

Claims (10)

An electronic device comprising: a first display device; and a second display device, Wherein, the first display device includes a first display portion, The second display device includes a second display portion, a plurality of first pixels are arranged in the first display portion, a plurality of second pixels are arranged in the second display portion, the first display device overlaps the second display device, The second display unit is arranged to surround at least a part of the first display unit in plan view, Moreover, the occupied area of each of the first pixels is smaller than the occupied area of each of the second pixels. An electronic device comprising: a first display device; and a second display device, Wherein, the first display device includes a first substrate, a first display portion on the first substrate, and a second substrate on the first display portion, The second display device includes a third substrate, a second display portion on the third substrate, and a fourth substrate on the second display portion, a plurality of first pixels are arranged in the first display portion, a plurality of second pixels are arranged in the second display portion, the second substrate overlaps the third substrate, The second substrate, the third substrate and the fourth substrate transmit the light emitted from the first pixel, The second display unit is arranged to surround at least a part of the first display unit in plan view, Moreover, the occupied area of each of the first pixels is smaller than the occupied area of each of the second pixels. For the electronic device of claim 2, Wherein the first substrate is a semiconductor substrate. For the electronic device of claim 2 or 3, Wherein the thickness of the third substrate is thinner than that of the first substrate. The electronic device of any one of claims 2 to 4, Wherein the third substrate is flexible. The electronic device of any one of claims 2 to 5, Wherein an adhesive layer is set between the second substrate and the third substrate. The electronic device of any one of claims 1 to 6, Wherein the second display portion includes an area that does not overlap with the first display portion. The electronic device of any one of claims 1 to 7, Wherein the second display device includes a third display portion, The third display part overlaps with the first display part, And the third display part transmits the light emitted from the first pixel. The electronic device of any one of claims 1 to 8, Wherein the electronic device includes a communication circuit, a control circuit, a first source driver circuit and a second source driver circuit, the first source driver circuit is electrically connected to the first pixel, the second source driver circuit is electrically connected to the second pixel, The communication circuit has the function of receiving image data, And the control circuit has the following functions: generate first data representing the brightness of light emitted from the first pixel and second data representing the brightness of light emitted from the second pixel according to the image data, and generate the first data representing the brightness of light emitted from the second pixel. Data is supplied to the first source driver circuit, and the second data is supplied to the second source driver circuit. The electronic device of any one of claims 1 to 9, Wherein the first pixel includes a first light emitting element, The second pixel includes a second light emitting element, The first light-emitting element includes a first pixel electrode and a first EL layer on the first pixel electrode, The first EL layer covers the end of the first pixel electrode, The second light-emitting element includes a second pixel electrode and a second EL layer on the second pixel electrode, And an insulating layer covering the end of the second pixel electrode is provided between the second pixel electrode and the second EL layer.