TW202328491A - Cooling device for a semiconductor process chamber and semiconductor process chamber - Google Patents

Cooling device for a semiconductor process chamber and semiconductor process chamber Download PDF

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Publication number
TW202328491A
TW202328491A TW111145465A TW111145465A TW202328491A TW 202328491 A TW202328491 A TW 202328491A TW 111145465 A TW111145465 A TW 111145465A TW 111145465 A TW111145465 A TW 111145465A TW 202328491 A TW202328491 A TW 202328491A
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Taiwan
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cooling
cavity
pipeline
top wall
air outlet
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TW111145465A
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Chinese (zh)
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任曉濱
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大陸商北京北方華創微電子裝備有限公司
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Publication of TW202328491A publication Critical patent/TW202328491A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Abstract

A cooling device for a semiconductor process chamber and a semiconductor process chamber. The cooling device is arranged on the top wall of the cavity of the semiconductor process chamber and is used to cool the top wall of the cavity. The cooling device includes a fixed plate, a plurality of cooling pipes and a barrier component. The fixing plate is relatively arranged above the top wall of the cavity, and the fixing plate, the top wall of the cavity and the side wall of the cavity form a receiving space; The blocking element is arranged between the fixing plate and the top wall of the cavity, and the containing space is divided into an intermediate cooling space and two edge cooling spaces respectively located on both sides thereof; A plurality of cooling pipes are spaced at different positions in each edge cooling space; The fixing plate is provided with a plurality of through holes, and the air inlets of the plurality of cooling pipelines are connected with the plurality of through holes one by one; The air outlet of the cooling pipe is used to blow cooling gas into the edge cooling space.

Description

半導體製程腔室的冷卻裝置及半導體製程腔室Cooling device for semiconductor process chamber and semiconductor process chamber

本發明涉及半導體設備技術領域,具體地,涉及一種製程腔室的冷卻裝置及製程腔室。The present invention relates to the technical field of semiconductor equipment, in particular to a cooling device for a process chamber and the process chamber.

在化學氣相沉積(Chemical Vapor Deposition,簡稱CVD)製程中,製程腔室內的溫度可達1100℃左右,因此,製程腔室需要採用石英材質來為製程提供所需的溫度環境,且在透明的石英的外表面鍍金,以借助鍍金層將熱源反射至製程腔室內,增加熱源反射率,保證製程腔室內的溫度能夠維持在製程所需的溫度範圍,而製程腔室外的機架、傳輸結構等金屬固定結構很難承受這麼高的溫度,因此,需要對製程腔室的外部進行冷卻。In the chemical vapor deposition (Chemical Vapor Deposition, referred to as CVD) process, the temperature in the process chamber can reach about 1100 ° C. Therefore, the process chamber needs to be made of quartz material to provide the required temperature environment for the process, and in a transparent The outer surface of the quartz is plated with gold to reflect the heat source into the process chamber with the help of the gold-plated layer, increase the reflectivity of the heat source, and ensure that the temperature in the process chamber can be maintained within the temperature range required by the process. The racks and transmission structures outside the process chamber, etc. It is difficult for metal fixtures to withstand such high temperatures, therefore, the outside of the process chamber needs to be cooled.

如圖8所示,現有的一種對製程腔室的外部進行冷卻的方式,是在製程腔室的頂部設置冷卻裝置6,冷卻裝置6從製程腔室頂部相對的兩側向中間輸送冷風,並且,製程腔室的頂部還會設置有圍堰7,冷風會從圍堰7的邊緣沿圍堰7的弧線向圍堰7的弧頂流動(如圖8中箭頭所示),對製程腔室的頂部外緣進行冷卻。但是,這樣會使得冷風由兩側向中間相對流動,且由於流動的距離較長,區域較大,當冷風流動到製程腔室的中間時,冷風的溫度已經升高,且風速已經降低,導致冷風對製程腔室中間的冷卻效果減弱,造成製程腔室的外部冷卻不均勻,並且,由於圍堰7的邊緣具有拐角,冷風在該拐角區域(如圖8中區域P所示)風速較低不易流動,導致冷風對該拐角區域的冷卻效果較差,並且,由於冷風在圍堰7的弧頂區域(如圖8中區域Q所示)的風速較低,且冷風受到弧形圍堰7阻擋,冷風到達弧頂區域時的風向會改變,導致冷風可能無法到達圍堰7的弧頂區域,造成圍堰7的拐角區域及弧頂區域形成“死區”,冷卻效果較差。在實際應用中,由於製程腔室的外部冷卻不均勻,會造成製程腔室的鍍金層產生裂紋甚至脫落,並且,由於圍堰7的拐角區域及弧頂區域的冷卻效果較差,圍堰7的拐角區域及弧頂區域的鍍金層會較易脫落,且由於製程腔室中間的冷卻效果較差,製程腔室中間的鍍金層會最先脫落,影響製程腔室的熱源反射效果和使用壽命。As shown in Figure 8, an existing way of cooling the outside of the process chamber is to install a cooling device 6 on the top of the process chamber, and the cooling device 6 sends cold air from the opposite sides of the top of the process chamber to the middle, and , the top of the process chamber will also be provided with a cofferdam 7, and the cold air will flow from the edge of the cofferdam 7 along the arc of the cofferdam 7 to the top of the arc of the cofferdam 7 (as shown by the arrow in Figure 8), and the process chamber Cool the top outer edge. However, this will cause the cold air to flow relatively from both sides to the middle, and because the flowing distance is longer and the area is larger, when the cold air flows to the middle of the process chamber, the temperature of the cold air has increased and the wind speed has decreased, resulting in The cooling effect of the cold wind on the middle of the process chamber is weakened, resulting in uneven cooling of the outside of the process chamber, and because the edge of the cofferdam 7 has a corner, the wind speed of the cold wind is low in the corner area (as shown in area P in Figure 8 ) It is not easy to flow, resulting in poor cooling effect of the cold wind on the corner area, and because the wind speed of the cold wind in the arc top area of the cofferdam 7 (as shown in area Q in Figure 8) is low, and the cold wind is blocked by the arc cofferdam 7 , when the cold wind reaches the arc top area, the wind direction will change, resulting in the cold wind may not reach the arc top area of the cofferdam 7, resulting in a "dead zone" formed in the corner area and arc top area of the cofferdam 7, and the cooling effect is poor. In practical application, due to the uneven external cooling of the process chamber, the gold-plated layer of the process chamber will crack or even fall off, and because the cooling effect of the corner area and the arc top area of the cofferdam 7 is poor, the cofferdam 7 The gold-plated layer in the corner area and arc top area will fall off more easily, and because the cooling effect in the middle of the process chamber is poor, the gold-plated layer in the middle of the process chamber will fall off first, affecting the heat source reflection effect and service life of the process chamber.

本發明旨在至少解決現有技術中存在的技術問題之一,提出了一種半導體製程腔室的冷卻裝置及半導體製程腔室,其能夠提高半導體製程腔室的冷卻效果,從而減小半導體製程腔室熱源反射受到的影響,提高半導體製程腔室的使用壽命。The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a cooling device for a semiconductor process chamber and a semiconductor process chamber, which can improve the cooling effect of the semiconductor process chamber, thereby reducing the size of the semiconductor process chamber. The reflection of the heat source is affected, and the service life of the semiconductor process chamber is improved.

為實現本發明的目的而提供一種半導體製程腔室的冷卻裝置,設置在該半導體製程腔室的腔體頂壁上,用於對該腔體頂壁進行冷卻,該冷卻裝置包括固定板、多個冷卻管路和阻隔組件,其中:該固定板相對設置於該腔體頂壁上方,且該固定板、該腔體頂壁和該腔體的側壁合圍形成容納空間;該阻隔元件設置在該固定板與該腔體頂壁之間,且將該容納空間分隔為中間冷卻空間和分別位於其兩側的兩個邊緣冷卻空間;多個該冷卻管路間隔排布於每個該邊緣冷卻空間內的不同位置處;該固定板上開設有多個通孔,多個該冷卻管路的進風口與多個該通孔一一對應連接;該冷卻管路的出風口用於向該邊緣冷卻空間內吹送冷卻氣體。In order to realize the purpose of the present invention, a cooling device for a semiconductor process chamber is provided, which is arranged on the top wall of the cavity of the semiconductor process chamber for cooling the top wall of the cavity. The cooling device includes a fixing plate, a plurality of A cooling pipeline and a blocking assembly, wherein: the fixing plate is relatively arranged above the top wall of the cavity, and the fixing plate, the top wall of the cavity and the side wall of the cavity are enclosed to form an accommodation space; the blocking element is set on the top wall of the cavity between the fixing plate and the top wall of the cavity, and divide the accommodating space into an intermediate cooling space and two edge cooling spaces respectively located on both sides; a plurality of the cooling pipelines are arranged at intervals in each edge cooling space At different positions in the interior; the fixed plate is provided with a plurality of through holes, and the air inlets of the plurality of cooling pipes are connected to the through holes one by one; the air outlets of the cooling pipes are used for cooling to the edge Cooling gas is blown into the space.

可選的,每個該冷卻管路均包括沿平行於自該腔體頂壁的中心向邊緣延伸的方向設置的主管道,該主管道的管壁開設有該出風口。Optionally, each of the cooling pipelines includes a main pipe arranged parallel to a direction extending from the center of the top wall of the cavity to the edge, and the pipe wall of the main pipe is provided with the air outlet.

可選的,該出風口為條形,且該出風口在其長度方向上的兩端分別延伸至靠近該主管道的兩端的位置處。Optionally, the air outlet is strip-shaped, and the two ends of the air outlet in the length direction respectively extend to positions close to the two ends of the main duct.

可選的,每個該冷卻管路均還包括進氣管道,該進氣管道的一端用作該冷卻管路的進風口,該進氣管道的另一端與該主管道的一端連接,該主管道的另一端為封堵端;該進氣管道與該主管道的連接處設置有折彎管段。Optionally, each of the cooling pipelines also includes an air intake pipe, one end of the air intake pipe is used as an air inlet of the cooling pipeline, the other end of the air intake pipe is connected to one end of the main pipe, and the main pipe The other end of the pipe is a blocked end; a bent pipe section is arranged at the joint between the inlet pipe and the main pipe.

可選的,每個該冷卻管路的通道中均設置有多個相互隔離的出風通道,多個該出風通道的一端均延伸至該冷卻管路的該進風口,且與對應的該通孔連通,多個該出風通道的另一端均延伸至該冷卻管路的該出風口。Optionally, each channel of the cooling pipeline is provided with a plurality of mutually isolated air outlet channels, and one end of the plurality of air outlet channels extends to the air inlet of the cooling pipeline, and is connected to the corresponding The through holes communicate, and the other ends of the plurality of air outlet channels extend to the air outlet of the cooling pipeline.

可選的,每個該邊緣冷卻空間內的多個該冷卻管路包括一個第一冷卻管路和多個第二冷卻管路,其中:Optionally, each of the plurality of cooling lines in the edge cooling space includes a first cooling line and a plurality of second cooling lines, wherein:

該第一冷卻管路排布於該邊緣冷卻空間內的中間位置,該第一冷卻管路的出風口的出氣方向與該腔體頂壁垂直設置;The first cooling pipeline is arranged in the middle of the edge cooling space, and the air outlet direction of the first cooling pipeline is vertical to the top wall of the cavity;

多個該第二冷卻管路對稱排布於該第一冷卻管路的兩側,該第二冷卻管路的出風口的出氣方向與該腔體頂壁具有夾角,且該第二冷卻管路的出風口的出氣方向朝遠離該第一冷卻管路的方向傾斜設置。A plurality of the second cooling pipelines are symmetrically arranged on both sides of the first cooling pipeline, the air outlet direction of the second cooling pipeline has an included angle with the top wall of the cavity, and the second cooling pipeline The air outlet direction of the air outlet is obliquely set away from the first cooling pipeline.

可選的,該第二冷卻管路的出風口的出氣方向與該圓周的切線平行。Optionally, the air outlet direction of the air outlet of the second cooling pipeline is parallel to the tangent of the circumference.

可選的,該第二冷卻管路的出風口所在平面與該腔體頂壁的夾角為50°-70°。Optionally, the included angle between the plane where the air outlet of the second cooling pipeline is located and the top wall of the cavity is 50°-70°.

可選的,多個該通孔上一一對應設置有進氣法蘭,該進氣法蘭用於與該冷卻氣體的氣源連通,每個該進氣法蘭的上游均設置有流量調節裝置,用於對應調節通入每個該冷卻管路的該冷卻氣體的流量。Optionally, a plurality of the through holes are provided with inlet flanges one by one, and the inlet flanges are used to communicate with the gas source of the cooling gas, and each inlet flange is provided with a flow adjustment upstream A device is used for correspondingly adjusting the flow rate of the cooling gas passing into each of the cooling pipelines.

本發明還提供一種半導體製程腔室,包括腔體和本發明提供的該冷卻裝置,其中,該腔體具有腔體頂壁和四個側壁,其中兩個相對設置的該側壁的一部分自該腔體頂壁的頂面凸出。The present invention also provides a semiconductor processing chamber, including a cavity and the cooling device provided by the present invention, wherein the cavity has a cavity top wall and four side walls, wherein a part of the two oppositely disposed side walls comes from the cavity The top surface of the body wall is convex.

本發明具有以下有益效果:The present invention has the following beneficial effects:

本發明提供的半導體製程腔室的冷卻裝置,通過在固定板與腔體頂壁之間設置阻隔元件,將固定板、腔體頂壁和腔體的側壁合圍形成的容納空間分隔為中間冷卻空間和位於其兩側的邊緣冷卻空間,並在該邊緣冷卻空間內的不同位置處間隔排布多個冷卻管路,可以借助多個冷卻管路向邊緣冷卻空間內吹送冷卻氣體,即在邊緣冷卻空間內的不同位置處同時吹氣,這與現有技術中冷卻氣體由腔體頂壁相對的兩側向中間相對流動的方式相比,可以使冷卻氣體能夠到達邊緣冷卻空間的各處,同時縮短氣體流動距離,避免因距離過長而導致氣體溫度上升,流速下降,從而可以避免邊緣冷卻空間存在冷卻氣體無法到達的區域,使得冷卻氣體在邊緣冷卻空間各處的溫度和流速均相近,繼而能夠提高冷卻氣體冷卻腔體頂壁不同位置的均勻性,提高對半導體製程腔室的冷卻效果,降低腔體外表面鍍金層產生裂紋甚至脫落的概率,進而減小半導體製程腔室熱源反射受到的影響,提高半導體製程腔室的使用壽命。The cooling device of the semiconductor process chamber provided by the present invention divides the accommodation space enclosed by the fixed plate, the top wall of the cavity and the side wall of the cavity into an intermediate cooling space by arranging a barrier element between the fixed plate and the top wall of the cavity and the edge cooling space on both sides, and a plurality of cooling pipelines are arranged at intervals at different positions in the edge cooling space, and the cooling gas can be blown into the edge cooling space by means of multiple cooling pipelines, that is, in the edge cooling space Blowing air at different positions inside the cavity at the same time, compared with the way in which the cooling gas flows from the opposite sides of the top wall of the cavity to the middle in the prior art, it can make the cooling gas reach all parts of the edge cooling space, and shorten the gas flow at the same time. The flow distance can avoid the increase of gas temperature and the decrease of flow rate due to too long distance, so as to avoid the area in the edge cooling space where the cooling gas cannot reach, so that the temperature and flow rate of the cooling gas in the edge cooling space are similar, and then can be improved. The cooling gas cools the uniformity of different positions of the top wall of the cavity, improves the cooling effect on the semiconductor process chamber, reduces the probability of cracks or even falling off of the gold-plated layer on the outer surface of the cavity, and thus reduces the impact of heat source reflection in the semiconductor process chamber, improving Service life of semiconductor process chambers.

本發明提供的半導體製程腔室,通過將本發明提供的半導體製程腔室的冷卻裝置設置在腔體頂壁上,可以借助本發明提供的半導體製程腔室的冷卻裝置對腔體頂壁進行冷卻,從而能夠提高半導體製程腔室的冷卻效果,進而減小半導體製程腔室熱源反射受到的影響,提高半導體製程腔室的使用壽命。In the semiconductor process chamber provided by the present invention, by setting the cooling device of the semiconductor process chamber provided by the present invention on the cavity top wall, the cavity top wall can be cooled by the cooling device of the semiconductor process chamber provided by the present invention , so that the cooling effect of the semiconductor process chamber can be improved, thereby reducing the influence of heat source reflection in the semiconductor process chamber, and improving the service life of the semiconductor process chamber.

以下揭露提供用於實施本揭露之不同構件之許多不同實施例或實例。下文描述組件及配置之特定實例以簡化本揭露。當然,此等僅為實例且非意欲限制。舉例而言,在以下描述中之一第一構件形成於一第二構件上方或上可包含其中該第一構件及該第二構件經形成為直接接觸之實施例,且亦可包含其中額外構件可形成在該第一構件與該第二構件之間,使得該第一構件及該第二構件可不直接接觸之實施例。另外,本揭露可在各個實例中重複參考數字及/或字母。此重複出於簡化及清楚之目的且本身不指示所論述之各個實施例及/或組態之間的關係。The following disclosure provides many different embodiments, or examples, of different means for implementing the disclosure. Specific examples of components and configurations are described below to simplify the present disclosure. Of course, these are examples only and are not intended to be limiting. For example, in the following description a first member is formed over or on a second member may include embodiments in which the first member and the second member are formed in direct contact, and may also include embodiments in which additional members An embodiment may be formed between the first member and the second member so that the first member and the second member may not be in direct contact. Additionally, the present disclosure may repeat reference numerals and/or letters in various instances. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and/or configurations discussed.

此外,為便於描述,諸如「下面」、「下方」、「下」、「上方」、「上」及類似者之空間相對術語可在本文中用於描述一個元件或構件與另一(些)元件或構件之關係,如圖中圖解說明。空間相對術語意欲涵蓋除在圖中描繪之定向以外之使用或操作中之裝置之不同定向。設備可以其他方式定向(旋轉90度或按其他定向)且因此可同樣解釋本文中使用之空間相對描述詞。In addition, for ease of description, spatially relative terms such as "below", "below", "under", "above", "upper" and the like may be used herein to describe the relationship between one element or member and another(s) The relationship between elements or components, as illustrated in the figure. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and thus the spatially relative descriptors used herein should be interpreted similarly.

儘管陳述本揭露之寬泛範疇之數值範圍及參數係近似值,然儘可能精確地報告特定實例中陳述之數值。然而,任何數值固有地含有必然由於見於各自測試量測中之標準偏差所致之某些誤差。再者,如本文中使用,術語「大約」通常意謂在一給定值或範圍之10%、5%、1%或0.5%內。替代地,術語「大約」意謂在由此項技術之一般技術者考量時處於平均值之一可接受標準誤差內。除在操作/工作實例中以外,或除非以其他方式明確指定,否則諸如針對本文中揭露之材料之數量、時間之持續時間、溫度、操作條件、數量之比率及其類似者之全部數值範圍、數量、值及百分比應被理解為在全部例項中由術語「大約」修飾。相應地,除非相反地指示,否則本揭露及隨附發明申請專利範圍中陳述之數值參數係可根據需要變化之近似值。至少,應至少鑑於所報告有效數位之數目且藉由應用普通捨入技術解釋各數值參數。範圍可在本文中表達為從一個端點至另一端點或在兩個端點之間。本文中揭露之全部範圍包含端點,除非另有指定。Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the disclosure are approximations, the numerical values set forth in the specific examples are reported as precisely as possible. Any numerical value, however, inherently contains certain errors necessarily resulting from the standard deviation found in their respective testing measurements. Furthermore, as used herein, the term "about" generally means within 10%, 5%, 1%, or 0.5% of a given value or range. Alternatively, the term "about" means within an acceptable standard error of the mean when considered by one of ordinary skill in the art. Except in operating/working examples, or unless expressly specified otherwise, all numerical ranges such as for amounts of materials disclosed herein, durations of time, temperatures, operating conditions, ratios of amounts, and the like, Amounts, values and percentages should be understood as being modified by the term "about" in all instances. Accordingly, unless indicated to the contrary, the numerical parameters set forth in this disclosure and the accompanying claims are approximations that may vary as desired. At a minimum, each numerical parameter should at least be construed in light of the number of reported significant digits and by applying ordinary rounding techniques. Ranges can be expressed herein as from one endpoint to the other or as between two endpoints. All ranges disclosed herein are inclusive of endpoints unless otherwise specified.

如圖1-圖3所示,本發明實施例提供一種半導體製程腔室的冷卻裝置,設置在半導體製程腔室的腔體1的腔體頂壁11上,用於對腔體頂壁11進行冷卻,冷卻裝置包括固定板2、多個冷卻管路3和阻隔組件4,其中:固定板2相對設置於腔體頂壁11上方,可選的,該固定板2與腔體1固定連接,固定板2、腔體頂壁11和腔體1的側壁12合圍形成用於安裝冷卻管路3的容納空間。阻隔元件4設置在固定板2與腔體頂壁11之間,且將上述容納空間分隔為中間冷卻空間11a和分別位於其兩側的兩個邊緣冷卻空間11b,即,腔體頂壁11的中間冷卻區域對應上述中間冷卻空間11a,腔體頂壁的位於該中間冷卻區域兩側的邊緣冷卻區域對應上述邊緣冷卻空間11b。具體地,以腔體1為六面體為例,其具有腔體頂壁11、腔體底壁和四個側壁12,如圖2所示,其中兩個相對設置的側壁12的一部分相對於腔體頂壁11的頂面凸出,形成凸出部分121,該凸出部分121可以與固定板2、腔體頂壁合圍形成上述容納空間。容易理解,兩個邊緣冷卻空間11b分別與兩個凸出部分121相鄰。另外,邊緣冷卻空間11b對應另外兩個相對的側壁的兩側(即,圖3中邊緣冷卻空間11b的上側和下側)是敞開的。As shown in FIGS. 1-3 , an embodiment of the present invention provides a cooling device for a semiconductor process chamber, which is arranged on the cavity top wall 11 of the cavity 1 of the semiconductor process chamber, and is used to cool the cavity top wall 11 Cooling, the cooling device includes a fixed plate 2, a plurality of cooling pipelines 3 and a barrier assembly 4, wherein: the fixed plate 2 is relatively arranged above the top wall 11 of the cavity, optionally, the fixed plate 2 is fixedly connected with the cavity 1, The fixing plate 2 , the top wall 11 of the cavity and the side wall 12 of the cavity 1 encircle to form an accommodating space for installing the cooling pipeline 3 . The barrier element 4 is arranged between the fixed plate 2 and the cavity top wall 11, and divides the above-mentioned accommodating space into an intermediate cooling space 11a and two edge cooling spaces 11b respectively located on both sides thereof, that is, the cavity top wall 11 The intermediate cooling area corresponds to the above-mentioned intermediate cooling space 11a, and the edge cooling areas of the top wall of the cavity located on both sides of the intermediate cooling area correspond to the above-mentioned edge cooling space 11b. Specifically, taking the cavity 1 as a hexahedron as an example, it has a cavity top wall 11, a cavity bottom wall and four side walls 12, as shown in FIG. The top surface of the cavity top wall 11 protrudes to form a protruding portion 121 , and the protruding portion 121 can be surrounded by the fixing plate 2 and the cavity top wall to form the above-mentioned accommodating space. It is easy to understand that the two edge cooling spaces 11b are respectively adjacent to the two protruding portions 121 . In addition, two sides of the edge cooling space 11b corresponding to the other two opposite side walls (ie, the upper side and the lower side of the edge cooling space 11b in FIG. 3 ) are open.

多個冷卻管路3間隔排布於每個邊緣冷卻空間11b內的不同位置處。可選的,冷卻管路3的一端與固定板2連接。固定板2上開設有多個通孔21,多個冷卻管路3的進風口與多個通孔21一一對應連接;冷卻管路3的出風口用於向邊緣冷卻空間11b內吹送冷卻氣體。A plurality of cooling pipelines 3 are arranged at intervals at different positions in each edge cooling space 11b. Optionally, one end of the cooling pipeline 3 is connected to the fixing plate 2 . The fixed plate 2 is provided with a plurality of through holes 21, and the air inlets of the plurality of cooling pipelines 3 are connected to the plurality of through holes 21 one by one; the air outlets of the cooling pipelines 3 are used to blow cooling gas into the edge cooling space 11b .

本發明實施例提供的半導體製程腔室的冷卻裝置,通過在固定板2與腔體頂壁11之間設置阻隔元件4,將固定板2、腔體頂壁11和腔體1的側壁12合圍形成的容納空間分隔為中間冷卻空間11a和分別位於其兩側的兩個邊緣冷卻空間11b,並在該邊緣冷卻空間內的不同位置處間隔排布多個冷卻管路3,可以借助多個冷卻管路3向邊緣冷卻空間11b內吹送冷卻氣體,即在邊緣冷卻空間11b內的不同位置處同時吹氣,這與現有技術中冷卻氣體由腔體頂壁相對的兩側向中間相對流動的方式相比,可以使冷卻氣體能夠到達邊緣冷卻空間11b的各處,同時縮短氣體流動距離,避免因距離過長而導致氣體溫度上升,流速下降,從而可以避免邊緣冷卻空間11b存在冷卻氣體無法到達的區域,使得冷卻氣體在邊緣冷卻空間11b各處的溫度和流速均相近,繼而能夠提高冷卻氣體冷卻腔體頂壁11不同位置的均勻性,提高對半導體製程腔室的冷卻效果,降低腔體外表面鍍金層產生裂紋甚至脫落的概率,進而減小半導體製程腔室熱源反射受到的影響,提高半導體製程腔室的使用壽命。The cooling device of the semiconductor process chamber provided by the embodiment of the present invention encloses the fixed plate 2, the cavity top wall 11 and the side wall 12 of the cavity 1 by setting the barrier element 4 between the fixed plate 2 and the cavity top wall 11 The formed accommodating space is divided into an intermediate cooling space 11a and two edge cooling spaces 11b respectively located on both sides thereof, and a plurality of cooling pipelines 3 are arranged at intervals at different positions in the edge cooling space. The pipeline 3 blows the cooling gas into the edge cooling space 11b, that is, blows air at different positions in the edge cooling space 11b at the same time, which is different from the way in the prior art that the cooling gas flows from the opposite sides of the cavity top wall to the middle. In contrast, the cooling gas can reach all parts of the edge cooling space 11b, while shortening the gas flow distance, avoiding the increase of the gas temperature and the decrease of the flow rate due to the excessive distance, thereby avoiding the problem that the cooling gas cannot reach the edge cooling space 11b. area, so that the temperature and flow rate of the cooling gas in the edge cooling space 11b are similar, and then the uniformity of the cooling gas at different positions of the top wall 11 of the cooling cavity can be improved, the cooling effect on the semiconductor process chamber can be improved, and the outer surface of the cavity can be reduced. The probability of cracks or even falling off of the gold-plated layer can further reduce the influence of heat source reflection in the semiconductor process chamber and improve the service life of the semiconductor process chamber.

具體來說,將固定板2與半導體製程腔室的腔體1連接,並使固定板2與腔體頂壁11相對設置,固定板2、腔體頂壁11和腔體1的側壁12合圍形成用於安裝冷卻管路3的容納空間,冷卻管路3能夠安裝於上述容納空間內,從而實現冷卻裝置與半導體製程腔室的安裝。借助阻隔元件4將上述容納空間分隔為中間冷卻空間11a和分別位於其兩側的兩個邊緣冷卻空間11b,其中,通過將多個冷卻管路3間隔排布於每個邊緣冷卻空間11b內的不同位置處,可以借助多個冷卻管路3向邊緣冷卻空間11b內的不同位置處同時吹送冷卻氣體,從而可以使冷卻氣體能夠到達邊緣冷卻空間11b的各處,同時縮短氣體流動距離,避免因距離過長而導致氣體溫度上升,流速下降,從而可以避免邊緣冷卻空間11b存在冷卻氣體無法到達的區域,使得冷卻氣體在邊緣冷卻空間11b各處的溫度和流速均相近,繼而能夠提高冷卻氣體冷卻腔體頂壁11不同位置的均勻性。Specifically, the fixed plate 2 is connected to the cavity 1 of the semiconductor process chamber, and the fixed plate 2 is arranged opposite to the cavity top wall 11, and the fixed plate 2, the cavity top wall 11 and the side wall 12 of the cavity 1 are enclosed An accommodating space for installing the cooling pipeline 3 is formed, and the cooling pipeline 3 can be installed in the aforesaid accommodating space, so as to realize the installation of the cooling device and the semiconductor process chamber. The above-mentioned accommodating space is divided into an intermediate cooling space 11a and two edge cooling spaces 11b respectively located on both sides thereof by means of a barrier element 4, wherein a plurality of cooling pipelines 3 are arranged at intervals in each edge cooling space 11b At different positions, a plurality of cooling pipelines 3 can be used to blow cooling gas to different positions in the edge cooling space 11b at the same time, so that the cooling gas can reach all parts of the edge cooling space 11b, and the gas flow distance can be shortened at the same time. If the distance is too long, the temperature of the gas will rise and the flow rate will decrease, thereby avoiding the region where the cooling gas cannot reach the edge cooling space 11b, so that the temperature and flow rate of the cooling gas in the edge cooling space 11b are similar, and then the cooling of the cooling gas can be improved. The uniformity of different positions of the cavity top wall 11.

另外,在實際應用中,由於中間冷卻空間11a中設置有用於加熱腔體1的線圈,並且中間冷卻空間11a對應的腔體1的內部區域為製程區域,所以中間冷卻空間11a相對於兩個邊緣冷卻空間11b的溫度高,因此,中間冷卻空間11a中可以設置有水冷裝置,以對,腔體頂壁11對應中間冷卻空間11a的中間冷卻區域進行冷卻。In addition, in practical applications, since the intermediate cooling space 11a is provided with coils for heating the cavity 1, and the inner area of the cavity 1 corresponding to the intermediate cooling space 11a is the process area, the intermediate cooling space 11a is relatively The temperature of the cooling space 11b is high, therefore, a water cooling device may be provided in the intermediate cooling space 11a to cool the intermediate cooling area of the cavity top wall 11 corresponding to the intermediate cooling space 11a.

在一些可選的實施例中,每個冷卻管路3均包括沿平行於自腔體頂壁11的中心向邊緣延伸的方向設置的主管道33,主管道33的管壁開設有上述出風口,用於向邊緣冷卻空間11b吹掃冷卻氣體。可選的,上述出風口朝向腔體頂壁11,且與該腔體頂壁11之間具有間距,以在保證冷卻氣體的正常吹出的同時,提高對腔體頂壁11的冷卻效率。多個冷卻管路3中的主管道33例如呈發散狀排布。可選的,冷卻管路3的一端與固定板2連接。In some optional embodiments, each cooling pipeline 3 includes a main pipe 33 arranged parallel to the direction extending from the center of the cavity top wall 11 to the edge, and the pipe wall of the main pipe 33 is provided with the above-mentioned air outlet , for purging cooling gas to the edge cooling space 11b. Optionally, the above-mentioned air outlet faces the top wall 11 of the cavity and has a distance from the top wall 11 of the cavity, so as to improve the cooling efficiency of the top wall 11 of the cavity while ensuring normal blowing of the cooling gas. The main pipes 33 in the plurality of cooling pipes 3 are arranged in a divergent shape, for example. Optionally, one end of the cooling pipeline 3 is connected to the fixing plate 2 .

通過在固定板2上開設多個通孔21,並使多個冷卻管路3的進風口與多個通孔21一一對應連接,多個通孔21用於與氣源連接,氣源提供的冷卻氣體可以通過多個通孔21一一對應地流入多個冷卻管路3,也就是說,冷卻氣體可以依次通過多個通孔21和與多個通孔21一一對應連接的多個冷卻管路3的進風口進入多個冷卻管路3,通過使冷卻管路3設置有沿平行於自腔體頂壁11的中心向邊緣延伸的方向設置的主管道33,並在主管道33的管壁開設出風口,可以使進入冷卻管路3的冷卻氣體能夠在主管道33內擴散,並使擴散後的冷卻氣體能夠通過在主管道33的管壁上開設的出風口吹送向邊緣冷卻空間內,從而能夠增大冷卻氣體經過出風口吹送向腔體頂壁11的面積,進而能夠提高半導體製程腔室的冷卻效果。進一步可選的,如圖5所示,上述出風口為條形,且該出風口在其長度方向上的兩端分別延伸至靠近主管道33的兩端的位置處,即,出風口在主管道33的管壁上開口的位置為主管道33與弧形阻隔板41相對的位置至主管道33的末端的位置,也就是說,出風口在主管道33的管壁上自主管道33靠近弧形阻隔板41的一側開設至相對的主管道33遠離弧形阻隔板41的一側。這樣,可以盡可能增大出風口的氣體通過面積,從而能夠使得冷卻氣體經過出風口吹送向腔體1的腔體頂壁的面積最大化,進而能夠最大化的提高半導體製程腔室的冷卻效果。By opening a plurality of through holes 21 on the fixed plate 2, and connecting the air inlets of the plurality of cooling pipelines 3 with the plurality of through holes 21 one by one, the plurality of through holes 21 are used to connect with the air source, and the air source provides The cooling gas can flow into a plurality of cooling pipelines 3 through a plurality of through holes 21 in one-to-one correspondence, that is, the cooling gas can pass through a plurality of through holes 21 and a plurality of through holes 21 connected one to one in sequence. The air inlets of the cooling pipelines 3 enter a plurality of cooling pipelines 3, and the cooling pipelines 3 are provided with a main pipeline 33 arranged along a direction parallel to the direction extending from the center of the cavity top wall 11 to the edge, and in the main pipeline 33 The pipe wall of the pipe is provided with an air outlet, so that the cooling gas entering the cooling pipeline 3 can be diffused in the main pipe 33, and the diffused cooling gas can be blown to the edge for cooling through the air outlet provided on the pipe wall of the main pipe 33. In the space, the area where the cooling gas is blown to the top wall 11 of the chamber through the air outlet can be increased, and the cooling effect of the semiconductor process chamber can be improved. Further optionally, as shown in FIG. 5 , the above-mentioned air outlet is strip-shaped, and the two ends of the air outlet in its length direction respectively extend to positions close to the two ends of the main duct 33, that is, the air outlet is in the main duct. The position of the opening on the pipe wall of the main pipe 33 is from the position where the main pipe 33 is opposite to the arc-shaped barrier plate 41 to the position of the end of the main pipe 33, that is to say, the air outlet is on the pipe wall of the main pipe 33 and the main pipe 33 is close to the arc. One side of the baffle plate 41 opens to the side of the opposite main pipe 33 away from the arc-shaped baffle plate 41 . In this way, the gas passage area of the air outlet can be increased as much as possible, so that the cooling gas can be blown to the cavity top wall of the cavity 1 through the air outlet to maximize the cooling effect of the semiconductor process chamber. .

如圖4-圖7所示,在本發明一優選實施例中,每個冷卻管路3可以均還包括進氣管道34,該進氣管道34例如沿垂直於腔體頂壁11的豎直方向延伸設置,並且,進氣管道34的一端用作冷卻管路3的進風口,進氣管道34的另一端與主管道33的一端(例如靠近腔體頂壁11的中心一端)連接,主管道33的另一端(例如靠近腔體頂壁11的邊緣一端)為封堵端;進氣管道34與主管道33的連接處設置有折彎管段,用於勻流冷卻氣體。As shown in FIGS. 4-7 , in a preferred embodiment of the present invention, each cooling pipeline 3 may further include an air intake duct 34 , such as along a vertical line perpendicular to the top wall 11 of the cavity. direction, and one end of the air intake duct 34 is used as the air inlet of the cooling pipeline 3, and the other end of the air intake duct 34 is connected to one end of the main duct 33 (for example, the end near the center of the cavity top wall 11), and the main The other end of the pipe 33 (for example, the end close to the edge of the top wall 11 of the cavity) is a blocked end; the connection between the inlet pipe 34 and the main pipe 33 is provided with a bent pipe section for uniform flow of cooling gas.

通過使進氣管道34的一端用作冷卻管路3的進風口,且與主管道33的一端連接,可以使冷卻氣體通過固定板2上的通孔21先進入進氣管道34,再經過進氣管道34進入主管道33,也就是說,冷卻氣體依次通過通孔21和進氣管道34用作進風口的一端進入進氣管道34,再經過進氣管道34後,從進氣管道34與主管道33連接的一端進入主管道33。通過在進氣管道34與主管道33的連接處設置有折彎管段,可以使冷卻氣體在經過進氣管道34進入主管道33時的流動方向發生改變,避免因進氣管道34中的冷卻氣體直接進入主管道33,而導致氣流轉向過大(例如由豎直方向直接轉變為水準方向),從而影響氣流均勻性,也就是說,借助折彎管段,能夠使冷卻氣體能夠均勻的流入至主管道33中,繼而使冷卻氣體能夠均勻的通過出風口向邊緣冷卻空間11b內吹送冷卻氣體,實現勻流冷卻氣體的效果,進而能夠提高半導體製程腔室的冷卻效果。By making one end of the air inlet pipe 34 serve as the air inlet of the cooling pipe 3, and be connected with one end of the main pipe 33, the cooling gas can first enter the air inlet pipe 34 through the through hole 21 on the fixed plate 2, and then pass through the inlet pipe 34. The air duct 34 enters the main duct 33, that is to say, the cooling gas enters the air intake duct 34 through the through hole 21 and the air intake duct 34 successively as an end of the air inlet, and then passes through the intake duct 34, from the intake duct 34 and One end where the main pipe 33 is connected enters into the main pipe 33 . By being provided with a bent pipe section at the junction of the intake duct 34 and the main duct 33, the flow direction of the cooling gas when entering the main duct 33 through the intake duct 34 can be changed to avoid cooling due to cooling in the intake duct 34. The gas directly enters the main pipe 33, causing the air flow to turn too much (for example, directly changing from a vertical direction to a horizontal direction), thereby affecting the uniformity of the air flow, that is, by means of bending the pipe section, the cooling gas can evenly flow into the In the main pipe 33, the cooling gas can be evenly blown into the edge cooling space 11b through the air outlet, so as to realize the effect of uniform flow of the cooling gas, thereby improving the cooling effect of the semiconductor process chamber.

如圖3-圖7所示,在本發明一優選實施例中,每個邊緣冷卻空間11b內的多個冷卻管路3可以包括一個第一冷卻管路31和多個第二冷卻管路32,其中:第一冷卻管路31排布於邊緣冷卻空間11b內的中間位置,第一冷卻管路31的出風口的出氣方向與腔體頂壁11垂直設置,即第一冷卻管路31的出風口所在平面與腔體頂壁11平行設置;多個第二冷卻管路32對稱排布於第一冷卻管路31的兩側,第二冷卻管路32的出風口的出氣方向與腔體頂壁11具有夾角,且第二冷卻管路32的出風口的出氣方向朝遠離第一冷卻管路31的方向傾斜設置。As shown in FIGS. 3-7 , in a preferred embodiment of the present invention, the plurality of cooling pipelines 3 in each edge cooling space 11b may include a first cooling pipeline 31 and a plurality of second cooling pipelines 32 , wherein: the first cooling pipeline 31 is arranged in the middle position in the edge cooling space 11b, and the air outlet direction of the air outlet of the first cooling pipeline 31 is set perpendicular to the cavity top wall 11, that is, the first cooling pipeline 31 The plane where the air outlet is located is set parallel to the top wall 11 of the cavity; a plurality of second cooling pipelines 32 are symmetrically arranged on both sides of the first cooling pipeline 31, and the air outlet direction of the second cooling pipeline 32 is in line with the direction of the cavity. The top wall 11 has an included angle, and the air outlet direction of the air outlet of the second cooling pipeline 32 is inclined toward a direction away from the first cooling pipeline 31 .

通過將第一冷卻管路31的出風口的出氣方向與腔體頂壁11垂直設置,這樣當第一冷卻管路31的出風口將冷卻氣體吹送向腔體頂壁11時,冷卻氣體可以沿垂直方向流動至腔體頂壁11,並與之相接觸,使得冷卻氣體在與腔體頂壁11接觸後能夠向第一冷卻管路31的兩側流動,通過將第二冷卻管路32的出風口的出氣方向與腔體頂壁11具有夾角(如圖6中夾角α所示),且第二冷卻管路32的出風口的出氣方向朝遠離第一冷卻管路31的方向傾斜設置,這樣當第二冷卻管路32的出氣口將冷卻氣體吹送向腔體頂壁11時,冷卻氣體可以傾斜地向邊緣冷卻空間11b的邊緣流動,並且冷卻氣體可以沿傾斜於腔體頂壁11的方向流動,並與腔體頂壁11接觸,使得冷卻氣體在與腔體頂壁11接觸後能夠向邊緣冷卻空間11b的邊緣流動。By setting the air outlet direction of the air outlet of the first cooling pipeline 31 perpendicular to the cavity top wall 11, when the air outlet of the first cooling pipeline 31 blows the cooling gas to the cavity top wall 11, the cooling gas can flow along The vertical direction flows to the cavity top wall 11 and is in contact with it, so that the cooling gas can flow to both sides of the first cooling pipeline 31 after being in contact with the cavity top wall 11, and through the second cooling pipeline 32 The air outlet direction of the air outlet has an included angle with the top wall 11 of the cavity (as shown by the angle α in FIG. 6 ), and the air outlet direction of the air outlet of the second cooling pipeline 32 is inclined away from the first cooling pipeline 31. In this way, when the gas outlet of the second cooling pipeline 32 blows the cooling gas to the cavity top wall 11, the cooling gas can flow obliquely to the edge of the edge cooling space 11b, and the cooling gas can flow in a direction inclined to the cavity top wall 11 The cooling gas flows and contacts the cavity top wall 11, so that the cooling gas can flow toward the edge of the edge cooling space 11b after contacting the cavity top wall 11.

如圖3所示,第一冷卻管路31排布於邊緣冷卻空間11b內的中間位置(如圖3中區域N所示),多個第二冷卻管路32對稱間隔排布於第一冷卻管路31的兩側(如圖3中區域M所示),且第二冷卻管路32的出風口的出氣方向朝遠離第一冷卻管路31的方向傾斜設置。As shown in Figure 3, the first cooling pipeline 31 is arranged in the middle of the edge cooling space 11b (as shown in the area N in Figure 3), and a plurality of second cooling pipelines 32 are symmetrically arranged at intervals in the first cooling Both sides of the pipeline 31 (shown as the area M in FIG. 3 ), and the air outlet direction of the air outlet of the second cooling pipeline 32 is arranged obliquely in a direction away from the first cooling pipeline 31 .

也就是說,第一冷卻管路31排布於邊緣冷卻空間11b內的中間位置,第二冷卻管路32排布於第一冷卻管路31的兩側,相對於第一冷卻管路31靠近邊緣冷卻空間11b的邊緣,且第一冷卻管路31兩側的第二冷卻管路32對稱且間隔排布,通過將第一冷卻管路31排布於邊緣冷卻空間11b內的中間位置,可以借助第一冷卻管路31向邊緣冷卻空間11b內的中間位置吹送冷卻氣體,並使冷卻氣體在與腔體頂壁11的邊緣冷卻區域內的中間位置接觸後能夠向兩側邊緣流動,通過將第二冷卻管路32對稱間隔排布於第一冷卻管路3的兩側,可以借助第二冷卻管路32向邊緣冷卻空間11b內的兩側邊緣吹送冷卻氣體,並使冷卻氣體在與腔體頂壁11接觸後能夠向兩側邊緣流動,從而可以實現向邊緣冷卻空間11b內不同位置吹送冷卻氣體。通過將第二冷卻管路32的出風口的出氣方向朝遠離第一冷卻管路31的方向傾斜設置,可以使得第二冷卻管路32吹出的冷卻氣體可以沿背離第一冷卻管路31的方向向邊緣冷卻空間11b內的邊緣流動,並且,第二冷卻管路32吹出的冷卻氣體在與腔體頂壁11接觸後,可以沿遠離第一冷卻管路31的方向流動,避免第二冷卻管路32吹出的冷卻氣體對第一冷卻管路31吹出的冷卻氣體的流動造成影響,以能夠提高冷卻裝置的冷卻穩定性,從而能夠提高半導體製程腔室的冷卻效果。That is to say, the first cooling pipeline 31 is arranged in the middle position in the edge cooling space 11b, and the second cooling pipeline 32 is arranged on both sides of the first cooling pipeline 31, close to the first cooling pipeline 31. The edge of the edge cooling space 11b, and the second cooling pipelines 32 on both sides of the first cooling pipeline 31 are arranged symmetrically and at intervals. By arranging the first cooling pipelines 31 in the middle of the edge cooling space 11b, it is possible to The cooling gas is blown to the middle position in the edge cooling space 11b by means of the first cooling pipeline 31, and the cooling gas can flow to the edges on both sides after contacting the middle position in the edge cooling area of the cavity top wall 11. The second cooling pipeline 32 is symmetrically arranged on both sides of the first cooling pipeline 3 at intervals, and the cooling gas can be blown to the edges on both sides in the edge cooling space 11b by means of the second cooling pipeline 32, and the cooling gas can flow in contact with the cavity The top wall 11 of the body can flow toward the edges of both sides after being in contact, so that the cooling gas can be blown to different positions in the edge cooling space 11b. By setting the air outlet direction of the air outlet of the second cooling pipeline 32 in a direction away from the first cooling pipeline 31, the cooling gas blown out by the second cooling pipeline 32 can be directed away from the first cooling pipeline 31. Flow toward the edge in the edge cooling space 11b, and the cooling gas blown out by the second cooling pipeline 32 can flow in a direction away from the first cooling pipeline 31 after contacting the cavity top wall 11, avoiding the second cooling pipeline The cooling gas blown out of the channel 32 affects the flow of the cooling gas blown out of the first cooling pipeline 31, so as to improve the cooling stability of the cooling device, thereby improving the cooling effect of the semiconductor process chamber.

可選的,第二冷卻管路32的出風口所在平面與腔體頂壁11的夾角可以為50°-70°。Optionally, the angle between the plane where the air outlet of the second cooling pipeline 32 is located and the top wall 11 of the cavity may be 50°-70°.

進一步可選的,第二冷卻管路32的出風口所在平面與腔體頂壁11的夾角可以為60°。Further optionally, the angle between the plane where the air outlet of the second cooling pipeline 32 is located and the top wall 11 of the cavity may be 60°.

如圖2和圖3所示,在本發明一優選實施例中,阻隔元件4可以包括兩個弧形阻隔板41,兩個弧形阻隔板41分佈在同一圓周上,且相對於該圓周的徑向對稱設置,每個弧形阻隔板41與腔體1的側壁12之間的空間即為上述邊緣冷卻空間11b;第一冷卻管路31和多個第二冷卻管路32沿上述圓周間隔排布於邊緣冷卻空間11b內,且沿上述圓周的不同徑向延伸。As shown in Fig. 2 and Fig. 3, in a preferred embodiment of the present invention, the barrier element 4 may include two arc-shaped barrier plates 41, and the two arc-shaped barrier plates 41 are distributed on the same circumference, and relative to the Arranged radially symmetrically, the space between each arc-shaped barrier plate 41 and the side wall 12 of the cavity 1 is the above-mentioned edge cooling space 11b; the first cooling pipeline 31 and the plurality of second cooling pipelines 32 are spaced apart along the above-mentioned circumference They are arranged in the edge cooling space 11b and extend along different radial directions of the above-mentioned circumference.

也就是說,通過兩個弧形阻隔板41,可以將上述容納空間分隔為中間冷卻空間11a和分別位於其兩側的兩個邊緣冷卻空間11b,其中,邊緣冷卻空間11b為兩個弧形阻隔板41分別與腔體1的兩個側壁12之間的空間,例如,如圖2和圖3所示,兩個弧形阻隔板41的內弧面可以相對設置,形成類似於“圍堰”的結構,在這種情況下,兩個弧形阻隔板41的內弧面之間的空間為中間冷卻空間11a,兩個弧形阻隔板41的外弧面分別與腔體1的兩個側壁12之間的空間為兩個邊緣冷卻空間11b。That is to say, through the two arc-shaped barrier plates 41, the above-mentioned accommodating space can be divided into an intermediate cooling space 11a and two edge cooling spaces 11b respectively located on both sides thereof, wherein the edge cooling space 11b is two arc-shaped barriers The space between the plates 41 and the two side walls 12 of the cavity 1, for example, as shown in Figure 2 and Figure 3, the inner arc surfaces of the two arc-shaped barrier plates 41 can be arranged opposite to each other to form a "cofferdam" In this case, the space between the inner arc surfaces of the two arc-shaped baffle plates 41 is the intermediate cooling space 11a, and the outer arc surfaces of the two arc-shaped baffle plates 41 are respectively connected to the two side walls of the cavity 1 The space between 12 is two edge cooling spaces 11b.

通過將第一冷卻管路31和多個第二冷卻管路32與固定板2連接,可以使第一冷卻管路31和第二冷卻管路32通過固定板2安裝於腔體1上。通過將第一冷卻管路31和第二冷卻管路32沿兩個弧形阻隔板41的弧線方向間隔排布於邊緣冷卻空間11b內,可以使得第一冷卻管路31和第二冷卻管路32吹送向邊緣冷卻空間11b內的冷卻氣體整體上,能夠沿著弧形阻隔板41的弧線方向向邊緣冷卻空間11b的邊緣流動,形成類似渦流的形式流動(如圖3中箭頭所示)。By connecting the first cooling pipeline 31 and the plurality of second cooling pipelines 32 to the fixing plate 2 , the first cooling pipeline 31 and the second cooling pipeline 32 can be installed on the cavity 1 through the fixing plate 2 . By arranging the first cooling pipeline 31 and the second cooling pipeline 32 at intervals along the arc direction of the two arc-shaped baffle plates 41 in the edge cooling space 11b, it is possible to make the first cooling pipeline 31 and the second cooling pipeline 32, the cooling gas blown into the edge cooling space 11b can flow along the arc direction of the arc-shaped barrier plate 41 to the edge of the edge cooling space 11b as a whole, forming a flow similar to a vortex (as shown by the arrow in FIG. 3 ).

這樣的設計是由於本發明的發明人發現:採用現有技術中,冷卻氣體由相對的兩側向中間相對流動時,冷卻氣體流動至中間的流速降低,會導致冷卻氣體無法流動至弧形阻隔板41的弧頂位置(即,中間位置),導致弧形阻隔板41的弧頂位置無法被冷卻,造成弧形阻隔板41的弧頂區域的鍍金層產生裂紋甚至脫落的情況,並且,如圖3所示,弧形阻隔板41的兩側邊緣具有直線部分,直線部分與弧形阻隔板41呈弧形的部分之間具有角度較大的拐角,當冷卻氣體由相對的兩側向中間相對流動時,由於冷卻氣體的流動方向會與弧形阻隔板41兩側邊緣的直線部分相平行,因此,冷卻氣體可能會在該拐角區域淤積,即,流動至該拐角區域的冷卻氣體不易從該拐角區域流走,導致冷卻氣體在該拐角區域的流速較慢,該拐角區域的冷卻效果較差,造成該拐角區域的鍍金層產生裂紋甚至脫落的情況。Such a design is because the inventors of the present invention found that: in the prior art, when the cooling gas flows from the opposite sides to the middle, the flow velocity of the cooling gas flowing to the middle is reduced, which will cause the cooling gas to fail to flow to the arc-shaped baffle plate The arc top position of 41 (that is, the middle position) causes the arc top position of the arc-shaped barrier plate 41 to be unable to be cooled, causing the gold-plated layer in the arc-top area of the arc-shaped barrier plate 41 to crack or even fall off, and, as shown in the figure 3, the two side edges of the arc-shaped baffle plate 41 have a straight line portion, and there is a corner with a relatively large angle between the straight line portion and the arc-shaped portion of the arc-shaped baffle plate 41. When flowing, since the flow direction of the cooling gas will be parallel to the straight line portions of both sides of the arc-shaped baffle plate 41, the cooling gas may accumulate in the corner area, that is, the cooling gas flowing to the corner area is not easy to flow from the corner area. The corner area flows away, causing the flow velocity of the cooling gas in the corner area to be slow, and the cooling effect of the corner area is poor, causing the gold plating layer in the corner area to crack or even fall off.

而本發明實施例提供的半導體製程腔室的冷卻裝置,一方面借助第一冷卻管路31向弧形阻隔板41的弧頂位置吹送冷卻氣體,並使冷卻氣體能夠由弧形阻隔板41的弧頂位置向兩側邊緣流動,可以避免冷卻氣體無法流動至弧形阻隔板41的弧頂位置的情況發生,從而避免弧形阻隔板41的弧頂位置無法被冷卻,造成弧形阻隔板41的弧頂位置的鍍金層產生裂紋甚至脫落的情況發生,繼而能夠提高對半導體製程腔室的冷卻效果,降低腔體1外表面鍍金層產生裂紋甚至脫落的概率,進而減小半導體製程腔室熱源反射受到的影響,提高半導體製程腔室的使用壽命。另一方面借助多個第二冷卻管路32向弧形阻隔板41的弧頂位置的兩側吹送冷卻氣體,並使冷卻氣體沿著弧形阻隔板41的弧線向邊緣流動,可以避免冷卻氣體在弧形阻隔板41的拐角區域淤積的情況發生,從而提高對弧形阻隔板41的拐角區域的冷卻效果,繼而能夠提高對半導體製程腔室的冷卻效果,降低腔體1外表面鍍金層產生裂紋甚至脫落的概率,進而減小半導體製程腔室熱源反射受到的影響,提高半導體製程腔室的使用壽命。The cooling device for the semiconductor process chamber provided by the embodiment of the present invention, on the one hand, blows cooling gas to the arc top position of the arc-shaped baffle plate 41 by means of the first cooling pipeline 31, and enables the cooling gas to pass through the arc-shaped baffle plate 41. The top position of the arc flows to the edges of both sides, which can avoid the situation that the cooling gas cannot flow to the top position of the arc-shaped blocking plate 41, thereby avoiding that the top position of the arc-shaped blocking plate 41 cannot be cooled, causing the arc-shaped blocking plate 41 The gold-plated layer at the arc top position cracks or even falls off, which can improve the cooling effect on the semiconductor process chamber and reduce the probability of cracks or even fall-off of the gold-plated layer on the outer surface of the cavity 1, thereby reducing the heat source of the semiconductor process chamber Reflection is affected, improving the service life of semiconductor process chambers. On the other hand, a plurality of second cooling pipelines 32 are used to blow cooling gas to both sides of the arc top position of the arc-shaped baffle plate 41, and make the cooling gas flow to the edge along the arc of the arc-shaped baffle plate 41, so that the cooling gas can be avoided. Deposition occurs in the corner area of the arc-shaped barrier plate 41, thereby improving the cooling effect on the corner area of the arc-shaped barrier plate 41, which in turn can improve the cooling effect on the semiconductor process chamber, and reduce the generation of gold-plated layers on the outer surface of the cavity 1 The probability of cracks or even falling off, thereby reducing the impact of heat source reflection in the semiconductor process chamber, and improving the service life of the semiconductor process chamber.

在本發明一優選實施例中,第二冷卻管路32的出風口的出氣方向與上述圓周的切線平行,這樣的設計可以使得第二冷卻管路32吹送的冷卻氣體能夠沿著弧形阻隔板41的弧線流動。In a preferred embodiment of the present invention, the air outlet direction of the air outlet of the second cooling pipeline 32 is parallel to the tangent line of the above-mentioned circumference. 41 arc flow.

如圖5和圖7所示,在本發明一優選實施例中,每個冷卻管路3的通道中均設置有多個相互隔離的出風通道35,多個出風通道35的一端均延伸至冷卻管路3的進風口,且與對應的通孔21連通,多個出風通道35的另一端均延伸至冷卻管路3的出風口。As shown in Fig. 5 and Fig. 7, in a preferred embodiment of the present invention, the channel of each cooling pipeline 3 is provided with a plurality of mutually isolated air outlet channels 35, and one end of the plurality of air outlet channels 35 extends To the air inlet of the cooling pipeline 3 and communicate with the corresponding through hole 21 , the other ends of the multiple air outlet channels 35 all extend to the air outlet of the cooling pipeline 3 .

這樣的設計可以使冷卻氣體在經過冷卻管路3的進風口進入冷卻管路3後,能夠均勻的分別進入多個出風通道35,再經過多個出風通道35分別從出風口吹送向腔體頂壁11,使得冷卻管路3吹送向腔體頂壁11的冷卻氣體,能夠腔體頂壁11上均勻分佈,從而能夠進一步提高冷卻氣體冷卻腔體頂壁11的均勻性,繼而能夠進一步提高對半導體製程腔室的冷卻效果,降低腔體1外表面鍍金層產生裂紋甚至脫落的概率,進而進一步減小半導體製程腔室熱源反射受到的影響,進一步提高半導體製程腔室的使用壽命。Such a design can make the cooling gas enter the cooling pipeline 3 through the air inlet of the cooling pipeline 3, and then enter the plurality of air outlet channels 35 evenly, and then blow through the plurality of air outlet channels 35 from the air outlet to the cavity. body top wall 11, so that the cooling gas blown by the cooling pipeline 3 to the cavity top wall 11 can be evenly distributed on the cavity top wall 11, thereby further improving the uniformity of the cooling gas cooling cavity top wall 11, and then further Improve the cooling effect of the semiconductor process chamber, reduce the probability of cracks or even fall off of the gold-plated layer on the outer surface of the cavity 1, further reduce the impact of heat source reflection in the semiconductor process chamber, and further improve the service life of the semiconductor process chamber.

如圖1和圖2所示,在本發明一優選實施例中,多個通孔21上可以一一對應設置有進氣法蘭5,進氣法蘭5用於與冷卻氣體的氣源連通,每個進氣法蘭5的上游可以均設置有流量調節裝置(圖中未示出),用於對應調節通入每個冷卻管路3的冷卻氣體的流量。As shown in Figures 1 and 2, in a preferred embodiment of the present invention, a plurality of through holes 21 can be provided with inlet flanges 5 corresponding to each other, and the inlet flanges 5 are used to communicate with the gas source of the cooling gas , a flow regulating device (not shown in the figure) may be provided upstream of each intake flange 5 for correspondingly adjusting the flow of cooling gas passing into each cooling pipeline 3 .

也就是說,通過在多個通孔21上一一對應設置進氣法蘭5,並使進氣法蘭5與冷卻氣體的氣源連通,可以使冷卻氣體的氣源與固定板2連接,並使冷卻氣體的氣源通過多個通孔21上一一對應設置的進氣法蘭5與多個通孔21連通,從而在冷卻裝置進行冷卻時,使冷卻氣體的氣源提供的冷卻氣體能夠通過多個通孔21進入與多個通孔21一一對應連接的多個冷卻管路3。通過在每個進氣法蘭5的上游均設置流量調節裝置,可以借助流量調節裝置對應調節通入每個冷卻管路3的冷卻氣體的流量,從而可以根據第一冷卻管路31對應的腔體頂壁11的面積,和第二冷卻管路32對應的腔體頂壁11的面積,來對進入第一冷卻管路31和第二冷卻管路32的冷卻氣體的流量進行調節,繼而能夠對第一冷卻管路31和第二冷卻管路32的冷卻氣體的流量進行適當的劃分和調節,進而能夠提高冷卻氣體的利用率。That is to say, by arranging the inlet flanges 5 one by one on the plurality of through holes 21, and making the inlet flanges 5 communicate with the gas source of the cooling gas, the gas source of the cooling gas can be connected with the fixed plate 2, And the gas source of the cooling gas is communicated with the plurality of through holes 21 through the inlet flanges 5 provided one by one on the plurality of through holes 21, so that when the cooling device is cooling, the cooling gas provided by the gas source of the cooling gas Through the plurality of through holes 21 , the plurality of cooling pipelines 3 connected to the plurality of through holes 21 can be entered in a one-to-one correspondence. By setting a flow regulating device upstream of each inlet flange 5, the flow of cooling gas passing into each cooling pipeline 3 can be adjusted correspondingly by means of the flow regulating device, so that the corresponding chamber of the first cooling pipeline 31 can The area of the top wall 11 of the body and the area of the top wall 11 of the cavity corresponding to the second cooling pipeline 32 are used to adjust the flow rate of the cooling gas entering the first cooling pipeline 31 and the second cooling pipeline 32, and then can Properly dividing and adjusting the flow rates of the cooling gas in the first cooling pipeline 31 and the second cooling pipeline 32 can further improve the utilization rate of the cooling gas.

可選的,流量調節部件可以包括風速調節閥。Optionally, the flow regulating component may include a wind speed regulating valve.

本發明實施例還提供一種半導體製程腔室,包括腔體1和如本發明實施例提供的冷卻裝置,其中,腔體1具有腔體頂壁11和四個側壁12,其中兩個相對設置的側壁12的一部分自腔體頂壁11的頂面凸出。冷卻裝置設置在腔體頂壁11上,用於對腔體頂壁11進行冷卻。The embodiment of the present invention also provides a semiconductor process chamber, including a cavity 1 and a cooling device as provided in the embodiment of the present invention, wherein the cavity 1 has a cavity top wall 11 and four side walls 12, two of which are oppositely arranged A part of the side wall 12 protrudes from the top surface of the cavity top wall 11 . The cooling device is arranged on the cavity top wall 11 for cooling the cavity top wall 11 .

本發明實施例提供的半導體製程腔室,通過將本發明實施例提供的半導體製程腔室的冷卻裝置設置在腔體頂壁11上,可以借助本發明實施例提供的半導體製程腔室的冷卻裝置對腔體頂壁11進行冷卻,從而能夠提高半導體製程腔室的冷卻效果,進而減小半導體製程腔室熱源反射受到的影響,提高半導體製程腔室的使用壽命。In the semiconductor process chamber provided by the embodiment of the present invention, by arranging the cooling device of the semiconductor process chamber provided by the embodiment of the present invention on the top wall 11 of the cavity, the cooling device of the semiconductor process chamber provided by the embodiment of the present invention can be used Cooling the top wall 11 of the cavity can improve the cooling effect of the semiconductor process chamber, thereby reducing the influence of heat source reflection in the semiconductor process chamber and improving the service life of the semiconductor process chamber.

綜上所述,本發明提供的半導體製程腔室的冷卻裝置及半導體製程腔室,能夠提高對半導體製程腔室的冷卻效果,從而減小半導體製程腔室熱源反射受到的影響,提高半導體製程腔室的使用壽命。In summary, the semiconductor process chamber cooling device and the semiconductor process chamber provided by the present invention can improve the cooling effect on the semiconductor process chamber, thereby reducing the impact of heat source reflection in the semiconductor process chamber and improving the efficiency of the semiconductor process chamber. chamber lifespan.

前述內容概括數項實施例之特徵,使得熟習此項技術者可更佳地理解本揭露之態樣。熟習此項技術者應瞭解,其等可容易地使用本揭露作為用於設計或修改用於實行本文仲介紹之實施例之相同目的及/或達成相同優點之其他製程及結構之一基礎。熟習此項技術者亦應瞭解,此等等效構造不背離本揭露之精神及範疇,且其等可在不背離本揭露之精神及範疇之情況下在本文中作出各種改變、置換及更改。The foregoing content summarizes the features of several embodiments, so that those skilled in the art can better understand aspects of the present disclosure. Those skilled in the art should appreciate that they can readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments described herein. Those skilled in the art should also understand that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they can make various changes, substitutions and alterations herein without departing from the spirit and scope of the present disclosure.

1:腔體 2:固定板 3:冷卻管路 4:阻隔組件 5:進氣法蘭 6:冷卻裝置 7:圍堰 11a:中間冷卻空間 11b:邊緣冷卻空間 21:通孔 31:第一冷卻管路 32:第二冷卻管路 33:主管道 34:進氣管道 35:出風通道 41:弧形阻隔板 121:凸出部分 1: Cavity 2: Fixed plate 3: Cooling pipeline 4: Barrier components 5: Inlet flange 6: cooling device 7: cofferdam 11a: Intermediate cooling space 11b: Edge Cooling Space 21: Through hole 31: The first cooling pipeline 32: Second cooling pipeline 33: Main pipeline 34: Intake pipe 35: Outlet channel 41: Curved barrier 121: protruding part

當結合附圖閱讀時,從以下詳細描述最佳理解本揭露之態樣。應注意,根據產業中之標準實踐,各種構件未按比例繪製。事實上,為了論述的清楚起見可任意增大或減小各種構件之尺寸。 圖1為本發明實施例提供的半導體製程腔室的冷卻裝置及半導體製程腔室的立體結構示意圖; 圖2為本發明實施例提供的半導體製程腔室的冷卻裝置及半導體製程腔室的主視結構示意圖; 圖3為圖2的A-A方向的俯視剖面結構示意圖; 圖4為本發明實施例提供的中間冷卻部件的結構示意圖; 圖5為圖4的C-C方向的剖面結構示意圖; 圖6為本發明實施例提供的邊緣冷卻部件的結構示意圖; 圖7為圖6的B-B方向的剖面結構示意圖; 圖8為現有的一種半導體製程腔室的冷卻裝置及半導體製程腔室的俯視結構示意圖。 Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying drawings. It should be noted that, in accordance with the standard practice in the industry, various components are not drawn to scale. In fact, the dimensions of the various components may be arbitrarily increased or decreased for clarity of discussion. 1 is a schematic diagram of a three-dimensional structure of a cooling device for a semiconductor process chamber and a semiconductor process chamber provided by an embodiment of the present invention; FIG. 2 is a schematic diagram of the front structure of the cooling device of the semiconductor process chamber and the semiconductor process chamber provided by the embodiment of the present invention; Fig. 3 is a top view sectional structure schematic diagram of the A-A direction of Fig. 2; Fig. 4 is a schematic structural diagram of an intermediate cooling component provided by an embodiment of the present invention; Fig. 5 is a schematic cross-sectional structure diagram of the C-C direction of Fig. 4; FIG. 6 is a schematic structural diagram of an edge cooling component provided by an embodiment of the present invention; Fig. 7 is a schematic cross-sectional structural diagram of the B-B direction of Fig. 6; FIG. 8 is a schematic top view of a conventional semiconductor process chamber cooling device and the semiconductor process chamber.

3:冷卻管路 3: Cooling pipeline

4:阻隔組件 4: Barrier components

11a:中間冷卻空間 11a: Intermediate cooling space

11b:邊緣冷卻空間 11b: Edge Cooling Space

31:第一冷卻管路 31: The first cooling pipeline

32:第二冷卻管路 32: Second cooling pipeline

41:弧形阻隔板 41: Curved barrier

Claims (11)

一種半導體製程腔室的冷卻裝置,設置在該半導體製程腔室的腔體頂壁上,用於對該腔體頂壁進行冷卻,該冷卻裝置包括一固定板、多個冷卻管路和阻隔組件,其中: 該固定板相對設置於該腔體頂壁上方,且該固定板、該腔體頂壁和該腔體的側壁合圍形成一容納空間; 該阻隔元件設置在該固定板與該腔體頂壁之間,且將該容納空間分隔為一中間冷卻空間和分別位於其兩側的兩個邊緣冷卻空間; 多個該冷卻管路間隔排布於每個該邊緣冷卻空間內的不同位置處;該固定板上開設有多個通孔,多個該冷卻管路的進風口與多個該通孔一一對應連接;該冷卻管路的出風口用於向該邊緣冷卻空間內吹送冷卻氣體。 A cooling device for a semiconductor process chamber, which is arranged on the top wall of the semiconductor process chamber and is used to cool the top wall of the cavity. The cooling device includes a fixed plate, a plurality of cooling pipelines and a barrier assembly ,in: The fixing plate is relatively arranged above the top wall of the cavity, and the fixing plate, the top wall of the cavity and the side walls of the cavity form an accommodating space; The barrier element is arranged between the fixing plate and the top wall of the cavity, and divides the accommodating space into an intermediate cooling space and two edge cooling spaces respectively located on both sides thereof; A plurality of the cooling pipelines are arranged at intervals at different positions in each of the edge cooling spaces; a plurality of through holes are opened on the fixing plate, and the air inlets of the plurality of cooling pipelines are connected with the plurality of through holes one by one. Correspondingly connected; the air outlet of the cooling pipeline is used to blow cooling gas into the edge cooling space. 如請求項1所述的冷卻裝置,其中,每個該冷卻管路均包括沿平行於自該腔體頂壁的中心向邊緣延伸的方向設置的一主管道,該主管道的管壁開設有該出風口。The cooling device according to claim 1, wherein each of the cooling pipelines includes a main pipe arranged parallel to the direction extending from the center of the top wall of the cavity to the edge, and the pipe wall of the main pipe is opened with The vent. 如請求項2所述的冷卻裝置,其中,該出風口為條形,且該出風口在其長度方向上的兩端分別延伸至靠近該主管道的兩端的位置處。The cooling device according to claim 2, wherein the air outlet is strip-shaped, and the two ends of the air outlet in the length direction extend to positions close to the two ends of the main duct respectively. 如請求項2所述的冷卻裝置,其中,每個該冷卻管路均還包括一進氣管道,該進氣管道的一端用作該冷卻管路的進風口,該進氣管道的另一端與該主管道的一端連接,該主管道的另一端為封堵端;該進氣管道與該主管道的連接處設置有折彎管段。The cooling device as claimed in item 2, wherein each of the cooling pipelines also includes an air inlet pipe, one end of the air inlet pipe is used as an air inlet of the cooling pipeline, and the other end of the air inlet pipe is connected to the One end of the main pipeline is connected, and the other end of the main pipeline is a plugged end; a bent pipe section is arranged at the joint between the air inlet pipeline and the main pipeline. 如請求項1-4中任意一項所述的冷卻裝置,其中,每個該冷卻管路的通道中均設置有多個相互隔離的出風通道,多個該出風通道的一端均延伸至該冷卻管路的該進風口,且與對應的該通孔連通,多個該出風通道的另一端均延伸至該冷卻管路的該出風口。The cooling device according to any one of claim items 1-4, wherein, each of the channels of the cooling pipeline is provided with a plurality of mutually isolated air outlet channels, and one end of the plurality of air outlet channels extends to The air inlet of the cooling pipeline communicates with the corresponding through hole, and the other ends of the plurality of air outlet channels extend to the air outlet of the cooling pipeline. 如請求項1所述的冷卻裝置,其中,每個該邊緣冷卻空間內的多個該冷卻管路包括一個第一冷卻管路和多個第二冷卻管路,其中: 該第一冷卻管路排布於該邊緣冷卻空間內的中間位置,該第一冷卻管路的出風口的出氣方向與該腔體頂壁垂直設置; 多個該第二冷卻管路對稱排布於該第一冷卻管路的兩側,該第二冷卻管路的出風口的出氣方向與該腔體頂壁具有夾角,且該第二冷卻管路的出風口的出氣方向朝遠離該第一冷卻管路的方向傾斜設置。 The cooling device as claimed in claim 1, wherein each of the plurality of cooling lines in the edge cooling space includes a first cooling line and a plurality of second cooling lines, wherein: The first cooling pipeline is arranged in the middle of the edge cooling space, and the air outlet direction of the first cooling pipeline is vertical to the top wall of the cavity; A plurality of the second cooling pipelines are symmetrically arranged on both sides of the first cooling pipeline, the air outlet direction of the second cooling pipeline has an included angle with the top wall of the cavity, and the second cooling pipeline The air outlet direction of the air outlet is obliquely set away from the first cooling pipeline. 如請求項6所述的冷卻裝置,其中,該阻隔組件包括兩個弧形阻隔板,兩個該弧形阻隔板分佈在同一圓周上,且相對於該圓周的徑向對稱設置,每個該弧形阻隔板與該腔體的側壁之間的空間即為該邊緣冷卻空間;該第一冷卻管路和多個該第二冷卻管路沿該圓周間隔排布於該邊緣冷卻空間內,且沿該圓周的不同徑向延伸。The cooling device according to claim 6, wherein the barrier assembly includes two arc-shaped barrier plates, the two arc-shaped barrier plates are distributed on the same circumference, and are arranged symmetrically relative to the radial direction of the circumference, each of the The space between the arc-shaped baffle plate and the side wall of the cavity is the edge cooling space; the first cooling pipeline and a plurality of the second cooling pipelines are arranged at intervals along the circumference in the edge cooling space, and Different radial extensions along the circumference. 如請求項7所述的冷卻裝置,其中,該第二冷卻管路的出風口的出氣方向與該圓周的切線平行。The cooling device according to claim 7, wherein the air outlet direction of the air outlet of the second cooling pipeline is parallel to the tangent of the circumference. 如請求項6所述的冷卻裝置,其中,該第二冷卻管路的出風口所在平面與該腔體頂壁的夾角為50°-70°。The cooling device according to claim 6, wherein the angle between the plane where the air outlet of the second cooling pipeline is located and the top wall of the cavity is 50°-70°. 如請求項1所述的冷卻裝置,其中,多個該通孔上一一對應設置有一進氣法蘭,該進氣法蘭用於與該冷卻氣體的氣源連通,每個該進氣法蘭的上游均設置有一流量調節裝置,用於對應調節通入每個該冷卻管路的該冷卻氣體的流量。The cooling device as claimed in item 1, wherein, a plurality of the through holes are provided with an inlet flange corresponding to each other, and the inlet flange is used to communicate with the gas source of the cooling gas, and each inlet method A flow regulating device is provided upstream of the flanges for correspondingly adjusting the flow of the cooling gas passing into each of the cooling pipelines. 一種半導體製程腔室,其中,包括一腔體和如請求項1-10中任意一項所述的冷卻裝置,其中,該腔體具有一腔體頂壁和四個側壁,其中兩個相對設置的該側壁的一部分自該腔體頂壁的頂面凸出。A semiconductor process chamber, which includes a cavity and the cooling device according to any one of claims 1-10, wherein the cavity has a cavity top wall and four side walls, two of which are opposite to each other A part of the side wall protrudes from the top surface of the cavity top wall.
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