TW202328333A - Resin composition, laminate, semiconductor chip with resin composition layer, mounting board for semiconductor chip with resin composition layer, and semiconductor device - Google Patents

Abstract

A resin composition containing: an aminotriazine novolac resin (A), at least one compound (B) selected from the group consisting of maleimide compounds (BA) and citraconimide compounds (BB), and an inorganic filler (D), wherein the inorganic filler (D) contains an inorganic filler (D1) having at least one functional group (d) selected from the group consisting of a (meth)acryl group, vinyl group, styryl group, and phenyl group, the compound (B) contains a compound (B1) and a compound (B2), the compound (B1) is at least one compound selected from the group consisting of maleimide compounds (BA-1) with a weight average molecular weight of at least 3,000 but not more than 9,500 and citraconimide compounds (BB-1) with a weight average molecular weight of at least 3,000 but not more than 9,500, the compound (B2) is at least one compound selected from the group consisting of maleimide compounds (BA-2) with a weight average molecular weight of at least 300 but less than 3,000 and citraconimide compounds (BB-2) with a weight average molecular weight of at least 300 but less than 3,000, and each of the above weight average molecular weights is a standard polystyrene equivalent value determined by gel permeation chromatography.

Description

Resin composition, laminate, semiconductor wafer provided with resin composition layer, substrate for mounting semiconductor wafer provided with resin composition layer, and semiconductor device

The present invention relates to a resin composition, a laminate, a semiconductor wafer provided with a resin composition layer, a substrate for mounting a semiconductor wafer provided with a resin composition layer, and a semiconductor device. Specifically, the present invention relates to a resin composition useful as an underfill material.

In recent years, with the miniaturization and high performance of semiconductor devices, flip-chip mounting has become a method of mounting a semiconductor chip (hereinafter sometimes referred to as "chip") on a semiconductor chip mounting substrate (hereinafter sometimes referred to as "substrate"). method has received attention. In flip-chip mounting, after bonding the chip and the substrate, filling the gap between the chip and the substrate with an underfill material and curing it is common. In addition, there is also a method of bonding the wafer, the underfill material, and the substrate after the chip or the substrate is filled with an underfill material (also called a pre-coated underfill material).

In flip-chip mounting, important characteristics required of underfill materials include maintaining insulation reliability. Therefore, in the steps of manufacturing a semiconductor device, it is necessary not to generate voids (bubbles) between the underfill material and the wafer and substrate, and it is necessary to suppress peeling of the cured underfill material from the wafer and substrate.

Patent Document 1 describes an underfill material in which a radically polymerizable monomer is used as the main resin. This Patent Document 1 describes the addition of a silane coupling agent in order to improve the adhesion to a wafer. [Prior Art Literature] [Patent Document]

[Patent Document 1] Japanese National Publication No. 2015-503220

[Problem to be Solved by the Invention]

However, generally speaking, radically polymerizable monomers harden quickly, so they harden before a sufficient number of bonds are formed between the reaction sites of the silane coupling agent and the silanol groups on the wafer surface. Therefore, the underfill material described in Patent Document 1 cannot obtain sufficient adhesiveness and adhesiveness between the resin composition and substrates such as chips and printed wiring boards, and as a result, voids tend to be generated. In addition, since the resin composition hardens before filling the unevenness existing on the surface of the wafer and the substrate, the underfill material described in Patent Document 1 has the problem of not being able to sufficiently obtain an anchoring effect useful for adhesion.

The present invention is made in view of such problems, and aims to provide a resin composition, a laminate, a semiconductor wafer provided with a resin composition layer, and a semiconductor provided with a resin composition layer, which have low voids and excellent wafer adhesion. A substrate for mounting a chip, and a semiconductor device. [Means to solve the problem]

The inventors of the present invention have made in-depth studies in order to solve the above-mentioned problems existing in the prior art, and found that a resin composition containing a specific component can solve the above-mentioned problems, leading to the completion of the present invention.

That is, the present invention includes the following. [1] A resin composition comprising: an aminotrisalpine novolak resin (A), one selected from the group consisting of a maleimide compound (BA) and a citraconamide compound (BB) The compound (B) above, and the inorganic filler (D); Inorganic filler (D1) having one or more functional groups (d), the compound (B) includes a compound (B1) and a compound (B2), and the compound (B1) is selected from the group having a weight average molecular weight of 3,000 to 9,500 One or more of the group consisting of a maleimide compound (BA-1) and a citraconamide compound (BB-1) having a weight average molecular weight of not less than 3,000 and not more than 9,500, and the aforementioned compound (B2) is Selected from the group consisting of maleimide compounds (BA-2) with a weight average molecular weight of 300 or more and less than 3,000 and citraconamide compounds (BB-2) with a weight average molecular weight of 300 or more and less than 3,000 One or more types in the group, each of the aforementioned weight average molecular weights is a value in terms of standard polystyrene obtained by gel permeation chromatography. [2] The resin composition as described in [1], wherein the functional group (d) further contains a silicon atom. [3] The resin composition according to [1] or [2], wherein the inorganic filler (D1) includes a compound (d1) having the functional group (d) and a compound not having the functional group (d). The reaction product of the inorganic filler (d2). [4] The resin composition as described in [3], wherein the compound (d1) having the functional group (d) is selected from silane compounds having (meth)acrylic and/or vinyl groups and styrene compounds having One or more of the group consisting of silane compounds based on the group. [5] The resin composition as described in [3] or [4], wherein the inorganic filler (d2) contains silicon dioxide, aluminum hydroxide, alumina, boehmite, nitride One or more species selected from the group consisting of boron, aluminum nitride, magnesium oxide, and magnesium hydroxide. [6] The resin composition as described in any one of [3] to [5], wherein the compound (d1) having a functional group (d) includes a compound selected from the group having a (meth)acrylic group and/or ethylene One or more of the group consisting of silane compounds having styryl groups and silane compounds having styryl groups, and the aforementioned inorganic filler (d2) includes silicon dioxide, aluminum hydroxide, alumina, boehmite, nitride One or more species selected from the group consisting of boron, aluminum nitride, magnesium oxide, and magnesium hydroxide. [7] The resin composition according to any one of [1] to [6], wherein the average particle diameter of the inorganic filler (D) is 3 μm or less. [8] The resin composition according to any one of [1] to [7], wherein the content of the inorganic filler (D) is relative to the amount of the amino trisanthene novolak resin (A) and the compound ( The total of 100 parts by mass of B) is 20 to 500 parts by mass. [9] The resin composition as described in any one of [1] to [8], wherein the above-mentioned aminotrisium novolac resin (A) comprises a compound selected from the following formula (1) and the following formula ( 2) One or more of the group consisting of the compounds represented. [chemical 1] In formula (1), R ₁ each independently represents a hydrogen atom, a methyl group, or an ethyl group, 1, m, and n each independently represent an integer of 0 to 10, and (l+m+n) represents an integer of 1 to 20 integer. [Chem 2] In formula (2), R ₂ each independently represent a hydrogen atom, a methyl group, or an ethyl group, o, p, q, r, and s each independently represent an integer of 0 to 10, (o+p+q+r +s) means an integer from 1 to 20. [10] The resin composition according to any one of [1] to [9], wherein the content of the compound (B1) is 100 parts by mass of the total of the compound (B1) and the compound (B2), 45 to 90 parts by mass, and the content of the compound (B2) is 10 to 55 parts by mass based on 100 parts by mass of the compound (B1) and the compound (B2) in total. [11] The resin composition according to any one of [1] to [10], wherein the maleimide compound (BA-1) contains maleimide compounds represented by the following formula (3). One or more of the group consisting of an amine compound and a bismaleimide compound having a constitutional unit represented by the following formula (4) and a maleimide group at both ends of a molecular chain. [Chem 3] In the formula, n3 represents an integer of 1 to 30. [chemical 4] In the formula, ^R11 represents a linear or branched alkylene group with 1 to 16 carbons, or a linear or branched alkenylene group with 2 to 16 carbons, and ^R12 represents a linear or branched alkenyl group with 1 to 16 carbons. A linear or branched alkylene group, or a linear or branched alkenylene group with 2 to 16 carbons, ^R13 each independently represents a hydrogen atom, a straight or branched chain with 1 to 16 carbons An alkyl group, or a linear or branched alkenyl group with 2 to 16 carbons, n ⁵ represents an integer of 1 to 10. [12] The resin composition according to any one of [1] to [11], wherein the maleimide compound (BA-2) contains maleimide compounds represented by the following formula (5). One or more of the group consisting of an amine compound and a maleimide compound represented by the following formula (6). [chemical 5] In the formula, R ₈ each independently represent a hydrogen atom, a methyl group, or an ethyl group, and R ₉ each independently represent a hydrogen atom or a methyl group. [chemical 6] In the formula, R ¹⁰ each independently represent a hydrogen atom, an alkyl group with 1 to 5 carbons, or a phenyl group, and n4 represents an integer of 1 to 10. [13] The resin composition described in any one of [1] to [12], further comprising a flux activator (C). [14] The resin composition according to [13], wherein the flux activator (C) contains a rosin-based resin. [15] The resin composition described in any one of [1] to [14], further comprising a curing catalyst (E). [16] The resin composition according to [15], wherein the curing catalyst (E) contains one or more species selected from the group consisting of organic peroxides and imidazole compounds. [17] The resin composition according to any one of [1] to [16], wherein the content of the amino tris-methanol novolac resin (A) is greater than that of the amino tris-methanol novolac resin (A) It is 1-60 mass parts with 100 mass parts of total with the said compound (B). [18] The resin composition according to any one of [1] to [17], wherein the content of the aforementioned compound (B) is equal to that of the aforementioned aminotrisalpine novolak resin (A) and the aforementioned compound (B) The total of 100 parts by mass is 40 to 85 parts by mass. [19] The resin composition described in any one of [1] to [18], which is used for an underfill material. [20] A laminate comprising: a support substrate, and a resin composition layer laminated on the support substrate and containing the resin composition described in any one of [1] to [19]. [21] The laminate according to [20], wherein the thickness of the resin composition layer is in the range of 5 to 500 μm. [22] A semiconductor wafer provided with a resin composition layer, comprising: a semiconductor wafer, and a layer laminated on the aforementioned semiconductor wafer using the resin composition described in any one of [1] to [19] . [23] A substrate for mounting a semiconductor chip provided with a layer of a resin composition, comprising: a substrate for mounting a semiconductor chip; A layer formed of the resin composition described. [24] A semiconductor device comprising: a semiconductor wafer provided with a resin composition layer as described in [22]. [25] A semiconductor device comprising: the substrate for mounting a semiconductor chip provided with a resin composition layer as described in [23]. [Effect of Invention]

According to the present invention, it is possible to provide a resin composition, a laminate, a semiconductor wafer provided with a resin composition layer, a substrate for mounting a semiconductor wafer provided with a resin composition layer, and a semiconductor device having low voids and excellent wafer adhesion. .

Hereinafter, an embodiment for implementing the present invention (hereinafter referred to as "the present embodiment") will be described. In addition, the present embodiment below is an illustration for explaining the present invention, and the present invention is not limited only to the present embodiment.

In addition, in this embodiment, "(meth)acryloxy" means both "acryloxy" and its corresponding "methacryloxy", and "(meth)acrylonitrile" Means both "acrylonitrile" and its corresponding "methacrylonitrile", "(meth)acrylic acid" means both "acrylic acid" and its corresponding "methacrylic acid", "(meth)acrylic acid" "Acrylic acid ester" means both "acrylate" and its corresponding "methacrylate", "(meth)allyl" means "allyl" and its corresponding "methyl" Allyl" both. In addition, unless otherwise specified, "~" in this specification means that the values at both ends are the upper limit and the lower limit, and the upper limit and the lower limit are set in the same unit.

In addition, in this embodiment, "resin solid content" or "resin solid content in the resin composition" means that the resin composition excludes the inorganic filler (D), curing catalyst (E), and The components after the solvent, "100 parts by mass of the resin solid content" means that the total of the components in the resin composition excluding the inorganic filler (D), the curing catalyst (E), and the solvent is 100 parts by mass.

[Resin composition] The resin composition of the present embodiment contains: amino trisporine novolac resin (A) (hereinafter also referred to as "resin (A)"), maleimide compound (BA) (hereinafter also referred to as "compound (BA)") )”) and citraconimide compound (BB) (hereinafter also referred to as "compound (BB)") consisting of one or more compounds (B), and an inorganic filler (D), the aforementioned inorganic filler The material (D) includes an inorganic filler (D1) having at least one functional group (d) selected from the group consisting of (meth)acrylic group, vinyl group, styryl group, and phenyl group. The compound (B) includes a compound (B1) and a compound (B2), wherein the compound (B1) is selected from maleimide compounds (BA-1) having a weight average molecular weight of 3,000 to 9,500 and a weight average molecular weight of 3,000 One or more of the group consisting of citraconamide compounds (BB-1) having a weight average molecular weight of 300 or more and less than 3,000, wherein the compound (B2) is selected from maleimides having a weight average molecular weight of 300 or more and less than 3,000 One or more of the group consisting of the compound (BA-2) and the citraconamide compound (BB-2) having a weight average molecular weight of 300 or more and less than 3,000, each of which has a weight average molecular weight obtained by using the gel permeation layer The value converted to standard polystyrene obtained by the analytical method. Since the resin composition of this embodiment is comprised in this way, it becomes what is excellent in low-void property and die adhesiveness. Since the resin composition of this embodiment has such performance, it can be used ideally as an underfill material used for flip-chip mounting.

In the present embodiment, the reason why a resin composition with low voids and excellent wafer adhesion can be obtained has not been elucidated, but the present inventors infer as follows. In general, resin compositions mainly composed of maleimide compounds and/or citraconimide compounds cannot obtain sufficient chip adhesiveness, and it is difficult to suppress damage caused by semiconductor chip mounting or heat curing (post-curing). Voids generated by heat, or delamination from hardened wafers and substrates. Here, since the amino trisanthonium novolak resin (A) has a trisulphuric acid skeleton, it can react well with a maleimide group and/or a citraconyl imide group. Therefore, the resin (A) can ideally control the speed of the radical polymerization reaction of the compound (B), and the resin composition containing the resin (A) and the compound (B) can be attached to the surface of the chip and the surface of the substrate. Harden. Therefore, the resin composition can have an excellent anchoring effect on the semiconductor chip and the substrate, and has excellent low-void property on the semiconductor chip and the substrate, and can exhibit good chip adhesiveness. Also, since the resin (A) has a novolac resin skeleton bonded to the triad skeleton, it can still contain a large amount of hydroxyl groups and amino groups even after hardening. Therefore, after hardening, a good chemical bond will still be produced between these groups and the silanol groups on the wafer surface. In addition to the aforementioned anchoring effect, a further excellent chemical bond is exhibited due to the chemical bond generated as described above. Wafer adhesion. Such an effect is not sufficient from a practical point of view in a novolak resin without a three-skeleton. Considering the above point of view, the resin composition containing the resin (A) and the compound (B) has excellent chip adhesiveness. According to such a resin composition, even when the semiconductor chip is mounted or heat-cured (after-curing) due to heat , still ideally suppressing voids. Furthermore, it is considered that even after the semiconductor wafer is mounted and post-cured, peeling of the cured product from the wafer and the substrate can be suppressed ideally. In addition, the inorganic filler (D1) contained in the resin composition of this embodiment has a specific functional group (d), and the reactivity between the functional group (d) and the compound (B) is high, so it is considered that the semiconductor chip The heat after installation and post-curing forms a firm chemical bond between the compound (B) and the inorganic filler (D1). As a result, it is considered that voids that may be generated after semiconductor wafer mounting and post-curing can be suppressed, and even after semiconductor wafer mounting and post-curing, peeling of hardened products from the wafer and substrate can be effectively suppressed. As described above, it is presumed that the resin composition of this embodiment is due to the synergy between the interaction between the resin (A) and the compound (B) and the interaction between the compound (B) and the inorganic filler (D1). It has excellent die adhesion, and by using such a resin composition, it is possible to ideally suppress voids that are usually easily generated by heat during semiconductor chip mounting and thermosetting (post-curing). Also, considering the same point of view, it is presumed that peeling of the cured product from the wafer and the substrate can be preferably suppressed even after the semiconductor wafer is mounted and post-cured. However, the reason is not limited to this.

[Amino trisulfone novolak resin (A)] In the resin composition of this embodiment, in consideration of obtaining excellent reactivity with the compound (B), and obtaining a resin composition with low voids and excellent wafer adhesion, the amino trisanthene novolak resin ( A). The amino triserum novolac resin (A) may be a phenol-formaldehyde resin (phenolic resin) having a triserum ring in the molecule, and a known resin may be used. Such an amino trisanthene novolac resin (A) can be produced by a known method, for example, it can be obtained by modifying a phenolic resin with a nitrogen compound such as melamine. Amino trisanthene novolak resin (A) can be used individually by 1 type or in mixture of 2 or more types suitably.

In the resin composition of the present embodiment, the content of the amino trisphenol-formaldehyde novolac resin (A) is considered to be able to obtain excellent reactivity with the compound (B), and to obtain better low-void property and chip adhesiveness. From a viewpoint, it is preferably 1 to 60 parts by mass with respect to 100 parts by mass of the total of the aminotrisium novolak resin (A) and the compound (B). Considering that excellent reactivity with compound (B) can be obtained, and further excellent low-void property and chip adhesiveness can be obtained, the content of the amino trisanthene phenolic novolac resin (A) relative to the amino trisanthene The total of 100 parts by mass of the novolac resin (A) and the compound (B) is more preferably 15-60 parts by mass, more preferably 15-50 parts by mass, more preferably 17-45 parts by mass, and more preferably 20-40 parts by mass. The quality parts are even more ideal.

Amino three phenolic novolac resin (A), considering that it can obtain excellent reactivity with compound (B), and can obtain further excellent low-void and chip adhesiveness, its weight average molecular weight is preferably 300~ 9,500, preferably 500~5,000. In addition, in this specification, a weight average molecular weight is the value calculated|required by the standard polystyrene conversion by the GPC (gel permeation chromatography) method.

Aminotrisyl phenolic novolac resin (A), considering that it can obtain excellent reactivity with compound (B), and can obtain further excellent low-void property and chip adhesiveness, its nitrogen content is higher than that of aminotrisaltyl phenolic novolak resin (A). In 100% by mass of the novolak resin, it is preferably 10 to 25% by mass, more preferably 15 to 25% by mass.

Amino-based novolac resin (A), considering that it can obtain excellent reactivity with compound (B), and can obtain further excellent low-void property and chip adhesiveness, its hydroxyl equivalent should be 80~200g /eq., 100~180g/eq. is better, considering that it can obtain further excellent reactivity with compound (B) and further excellent low void property, and at the same time can obtain further excellent chip adhesion From a point of view, 130~170g/eq. is even better. In addition, in the present embodiment, the hydroxyl equivalent represents the number of mg of potassium hydroxide required to acetylate the hydroxyl group contained in 1 g of the aminotrisium novolac resin. Specifically, it measured based on JISK0070.

The amino trisporate novolac resin (A), considering that it can obtain better reactivity with the compound (B), and can obtain further excellent low-void and chip adhesiveness, preferably includes the following formula ( One or more of the group consisting of the compound represented by 1) and the compound represented by the following formula (2).

[chemical 7]

In formula (1), R ₁ each independently represents a hydrogen atom, a methyl group, or an ethyl group. Considering that further excellent reactivity with compound (B) can be obtained, and further excellent low-void property and wafer adhesiveness can be obtained, R ₁ is preferably each independently a hydrogen atom or a methyl group. l, m, and n each independently represent an integer of 0-10. In consideration of obtaining further excellent reactivity with the compound (B), and obtaining further excellent low-void property and wafer adhesiveness, l, m, and n are preferably each independently an integer of 1-6. (l+m+n) represents an integer from 1 to 20. In consideration of obtaining further excellent reactivity with compound (B), and obtaining further excellent low-void property and wafer adhesiveness, (l+m+n) is preferably an integer of 3-18. In addition, the compound represented by formula (1) may also be, for example: a compound comprising the radical of R in formula ( ₁ ) or a different value thereof; a compound with different values of l, m, and n; (l+m+n ) is a mixture of compounds with different numerical values.

[chemical 8]

In formula (2), R ₂ each independently represent a hydrogen atom, a methyl group, or an ethyl group. Considering that further excellent reactivity with compound (B) can be obtained, and further excellent low-void property and wafer adhesiveness can be obtained, _R2 is preferably each independently a hydrogen atom or a methyl group. o, p, q, r, and s each independently represent an integer of 0 to 10. Considering the viewpoint that further excellent reactivity can be obtained with compound (B), and further excellent low-void property and wafer adhesiveness can be obtained, o, p, q, r, and s should each independently be 1~ Integer of 4. (o+p+q+r+s) represents an integer from 1 to 20. Considering that it can obtain further excellent reactivity with compound (B), and can obtain further excellent low-void property and chip adhesiveness, (o+p+q+r+s) should be between 5 and 20 integer. In addition, the compound represented by formula (2) may also be, for example: a compound comprising the base of R in formula ( ₂ ) or a different value thereof; a compound with different values of o, p, q, r, and s; (o +p+q+r+s) is a mixture of compounds having different values.

Considering that it can obtain further excellent reactivity with the compound (B), and can obtain further excellent low-void property and chip adhesiveness, the amino trisulfone novolac resin (A) is represented by the formula (1) A mixture of the compound and the compound represented by formula (2) is more preferable. Considering that such a mixture can obtain further excellent reactivity with compound (B), and can obtain further excellent low-void property and wafer adhesiveness, the compound represented by formula (1) and the compound represented by formula (2) The mass ratio of the compounds (compound represented by formula (1) (parts by mass): compound represented by formula (2) (parts by mass)) is preferably 50:50~90:10, more preferably 60:40~85:15.

Aminotrisalpine novolac resin (A) can also use commercially available products, for example: LA-1356 (trade name), LA-3018-50P (trade name), LA-7052 (trade name) manufactured by DIC Co., Ltd. name), LA-7054 (trade name), LA-7751 (trade name).

[Compound (B)] In the resin composition of the present embodiment, considering the viewpoint of low void property and excellent chip adhesiveness, it contains a compound selected from the group consisting of maleimide compound (BA) and citraconamide compound (BB). One or more compounds (B). The compound (B) is not particularly limited as long as it contains one or more species selected from the group consisting of maleimide group and citraconimide group in the molecule. The compound (B) preferably does not exhibit reactivity with the flux activator (C) described later. Compound (B) can be used individually by 1 type or in mixture of 2 or more types.

In the compound (B) of the present embodiment, considering that it has better reactivity with the amino trisanthene phenolic novolak resin (A), and can obtain better low-void property and chip adhesiveness, it is preferable to contain maleic acid. Amide compound (BA). In addition, maleimide compound (BA) is less likely to remarkably react with the flux activator during storage or heat treatment than epoxy compounds, and the inactivation of the flux activator is less likely to occur. .

The compound (B) includes a compound (B1) and a compound (B2), and the compound (B1) is selected from maleimide compounds (BA-1) having a weight average molecular weight of 3,000 to 9,500 and a weight average molecular weight of 3,000 or more In addition, one or more types of citraconimide compounds (BB-1) of 9,500 or less are selected from the group consisting of maleimide compounds (BB-1) having a weight average molecular weight of 300 or more and less than 3,000 ( One or more species of the group consisting of BA-2) and a citraconamide compound (BB-2) having a weight average molecular weight of 300 to less than 3,000.

The resin composition of this embodiment will become a thing with further excellent low-void property and die adhesiveness by containing compound (B1) and (B2) as compound (B). The reason for this has not been elucidated, but the present inventors infer as follows. That is, it is presumed that the resin composition contains the compound (B1) having a relatively high molecular weight, so that the stress generated during curing shrinkage during mounting of the semiconductor wafer or during thermal curing (post-curing) is expected to be relaxed. Therefore, the effect of improving the adhesiveness by using the resin (A) will be further promoted. In addition, the resin composition also contains a relatively low molecular weight compound (B2). Therefore, the crosslinking density can be improved during semiconductor wafer mounting or thermal curing (post-curing), and the stress relaxation caused by the inclusion of resin (A) and compound (B1) can further promote the developed adhesion. sex. However, the reason is not limited to this.

The compound (B1) preferably contains a maleimide compound (BA-1) from the viewpoint of obtaining further excellent low-void property and die adhesiveness.

The compound (B2) preferably contains a maleimide compound (BA-2) from the viewpoint of obtaining further excellent low-void property and die adhesiveness.

The maleimide compound (BA-1) has a weight average molecular weight of 3,200 to 8,000, more preferably 3,300 to 6,000, in view of obtaining further excellent low void property and wafer adhesiveness. good.

For the citraconamide compound (BB-1), the weight average molecular weight is preferably 3,200 to 8,000, more preferably 3,300 to 6,000, in view of obtaining further excellent low-void property and wafer adhesiveness. good.

The maleimide compound (BA-2) is preferably a weight average molecular weight of 350 to 2,800, more preferably 400 to 2,500, in view of obtaining further excellent low-void property and wafer adhesiveness. good.

For the citraconamide compound (BB-2), it is preferable to have a weight average molecular weight of not less than 350 and not more than 2,800, and more preferably not less than 400 and not more than 2,500, in view of obtaining further excellent low-void property and chip adhesiveness. good.

(maleimide compound (BA)) The maleimide compound (BA) is not particularly limited as long as it is a resin or compound having one or more maleimide groups in the molecule. Maleimide compound (BA) can be used 1 type or in mixture of 2 or more types. Examples of such maleimide compounds (BA) include N-phenylmaleimide, N-hydroxyphenylmaleimide, bis(4-maleiminophenyl)methane , 4,4-diphenylmethanebismaleimide, bis(3,5-dimethyl-4-maleiminophenyl)methane, bis(3-ethyl-5-methyl -4-maleiminophenyl)methane, bis(3,5-diethyl-4-maleiminophenyl)methane, phenylmethanemaleimide, o-phenylene bismale Phenyl imide, m-phenylene bismaleimide, p-phenylene bismaleimide, 2,2-bis(4-(4-maleimidophenoxy)-phenyl)propane, 3,3-Dimethyl-5,5-diethyl-4,4-diphenylmethane bismaleimide, 4-methyl-1,3-phenylene bismaleimide, 1,6-bismaleimide-(2,2,4-trimethyl)hexane, 4,4-diphenylether bismaleimide, 4,4-diphenylbismaleimide Larimide, 1,3-bis(3-maleimidophenoxy)benzene, 1,3-bis(4-maleimidophenoxy)benzene, polyphenylmethane Maleimide, novolac resin type maleimide compound, biphenylaralkyl type maleimide compound, 2,2-bis(4-(4-maleimidophenoxy) Phenyl)propane, 1,2-bis(maleimido)ethane, 1,4-bis(maleimido)butane, 1,6-bis(maleimido) Hexane, N,N'-1,3-phenylene dimaleimide, N,N'-1,4-phenylene dimaleimide, N-phenylmaleimide , a maleimide compound represented by the following formula (3), a bismaleimide compound containing a structural unit represented by the following formula (4) and a maleimide group at both ends of the molecular chain, the following formula A maleimide compound represented by (5), a maleimide compound represented by the following formula (6), a maleimide compound represented by the following formula (7), and the like. The compound (B) can also be contained in the present embodiment in the form of a prepolymer obtained by polymerizing a maleimide compound, a prepolymer obtained by polymerizing a maleimide compound and an amine compound, or the like. form of resin composition.

[chemical 9]

In formula (3), n3 represents the integer of 1-30.

[chemical 10]

In formula (4), R ¹¹ represents a linear or branched alkylene group having 1 to 16 carbons, or a linear or branched alkenylene group having 2 to 16 carbons. R ¹² represents a linear or branched alkylene group having 1 to 16 carbons, or a linear or branched alkenylene group having 2 to 16 carbons. R ¹³ each independently represent a hydrogen atom, a linear or branched alkyl group having 1 to 16 carbons, or a linear or branched alkenyl group having 2 to 16 carbons. n ^{and 5} each independently represent an integer of 1 to 10. In addition, the detailed description of the structural unit represented by formula (4) is mentioned later.

[chemical 11]

In formula (5), R ₈ each independently represent a hydrogen atom, a methyl group, or an ethyl group. R ₉ each independently represent a hydrogen atom or a methyl group.

[chemical 12]

In formula (6), R ¹⁰ each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a phenyl group. n4 represents an integer from 1 to 10. R ¹⁰ is preferably a hydrogen atom.

[chemical 13]

In the formula (7), R ¹⁰ each independently represent a hydrogen atom or a methyl group, and n2 represents an integer of 1 or more, preferably an integer of 1 to 10.

Next, the structure of a bismaleimide compound containing a structural unit represented by formula (4) and maleimide groups at both ends of a molecular chain will be described. The bismaleimide compound may also have multiple structural units represented by formula (4). At this time, R ¹¹ , R ¹² , and R ¹³ in multiple structural units represented by formula (4) may be the same or may be different. In addition, the bismaleimide compound may be R ¹¹ , R ¹² , and R ¹³ in the structural unit represented by the formula (4), and the structural unit of the formula (4) in the bismaleimide compound. At least one of the numerical values is a mixture of different compounds. In the structural unit represented by formula (4), R ¹¹ represents a linear or branched alkylene group having 1 to 16 carbons, or a linear or branched alkenylene group having 2 to 16 carbons. R ¹¹ Considering that the resin composition has an ideal viscosity when mounting the resin composition layer of the chip, and can ideally control the rise of the melt viscosity during mounting, it is preferably a linear or branched alkylene group , it is more preferably a linear alkylene group.

The number of carbon atoms in the alkylene group is preferably 2 to 14, considering that the resin composition has a more ideal viscosity when mounting the resin composition layer on the chip, and can more ideally control the rise of the melt viscosity during mounting. , 4~12 is better. Linear or branched alkylene groups include, for example: methylene, ethylidene, propylidene, 2,2-dimethylpropylidene, butylene, pentyl, hexylene, heptyl Base, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl, Neopentyl, dimethylbutyl, methylhexyl, ethylhexyl, dimethylhexyl, trimethylhexyl, methylheptyl, dimethylheptyl, trimethylhexyl Heptyl, tetramethylheptyl, ethylheptyl, methyloctyl, methylnonyl, methyldecyl, methylundecyl, methyldodecyl, methyl Tridecyl, Methyltetradecyl, and Methylpentadecyl.

The carbon number of the alkenylene group is preferably 2 to 14 in view of the fact that the resin composition has a more ideal viscosity when mounting the resin composition layer of the chip, and can more ideally control the rise of the melt viscosity during mounting. , 4~12 is better. Examples of linear or branched alkenylene groups include vinylene, 1-methylvinyl, allyl, propenyl, isopropenyl, 1-butenyl, and 2- Butenyl, 1-pentenyl, 2-pentenyl, isopentenyl, cyclopentenyl, cyclohexenyl, dicyclopentadienyl and the like.

In the structural unit represented by the formula (4), ^R12 represents a linear or branched alkylene group having 1 to 16 carbons, or a linear or branched alkenylene group having 2 to 16 carbons. R ¹² Considering that the resin composition has an ideal viscosity when mounting the resin composition layer of the chip, and can ideally control the rise of the melt viscosity during mounting, it is preferably a linear or branched alkylene group , it is more preferably a linear alkylene group.

The number of carbon atoms in the alkylene group is preferably 2 to 14, considering that the resin composition has a more ideal viscosity when mounting the resin composition layer on the chip, and can more ideally control the rise of the melt viscosity during mounting. , 4~12 is better. For the linear or branched alkylene group, refer to the aforementioned R ¹¹ .

The carbon number of the alkenylene group is preferably 2 to 14 in view of the fact that the resin composition has a more ideal viscosity when mounting the resin composition layer of the chip, and can more ideally control the rise of the melt viscosity during mounting. , 4~12 is better. For the linear or branched alkenylene group, refer to the aforementioned R ¹¹ .

In the structural unit represented by the formula (4), R ¹¹ and R ¹² may be the same or different, but they are preferably the same from the viewpoint of easier synthesis of the bismaleimide compound.

In the structural unit represented by formula (4), R ¹³ each independently represent a hydrogen atom, a linear or branched alkyl group with 1 to 16 carbons, or a linear or branched alkenes with 2 to 16 carbons base. R ¹³ Considering that the resin composition has an ideal viscosity when mounting the resin composition layer of the wafer, and can ideally control the rise of the melt viscosity during mounting, it is preferably each independently a hydrogen atom or a carbon number of 1 ~16 linear or branched alkyl groups, among R ¹³ , 1 to 5 groups (R ¹³ ) are linear or branched alkyl groups with 1 to 16 carbons, and the remaining groups (R ¹³ ) is more preferably a hydrogen atom, among R ¹³ , 1~3 groups (R ¹³ ) are linear or branched alkyl groups with 1~16 carbons, and the remaining groups (R ¹³ ) are hydrogen atoms Even better.

The carbon number of the alkyl group is preferably 2 to 14, considering that the resin composition has a more ideal viscosity when mounting the resin composition layer of the chip, and can more ideally control the rise of the melt viscosity during mounting. 4~12 is better. Linear or branched alkyl groups include, for example: methyl, ethyl, n-propyl, isopropyl, 1-ethylpropyl, n-butyl, 2-butyl, isobutyl, tert-butyl Base, n-pentyl, 2-pentyl, tertiary pentyl, 2-methylbutyl, 3-methylbutyl, 2,2-dimethylpropyl, n-hexyl, 2-hexyl, 3-hexyl , n-heptyl, n-octyl, 2-methylpentyl, 3-methylpentyl, 4-methylpentyl, 2-methylpentan-3-yl, and n-nonyl.

The carbon number of the alkenyl group is preferably 2 to 14, considering that the resin composition has a more ideal viscosity when mounting the resin composition layer of the chip, and can more ideally control the rise of the melt viscosity during mounting. 4~12 is better. Examples of linear or branched alkenyl include vinyl, allyl, 4-pentenyl, isopropenyl, isopentenyl, 2-heptenyl, 2-octenyl, and 2- Nonenyl.

In the structural unit represented by formula (4), ⁿ⁵ represents the integer of 1-10.

The bismaleimide compound has maleimide groups at both ends of the molecular chain. Both ends mean the ends on both sides of the molecular chain of the bismaleimide compound. For example, when the constituent unit represented by formula (4) is at the end of the molecular chain of the bismaleimide compound, it means that at R ¹¹ The end of the molecular chain has a maleimide group, or there is a maleimide group at the end of the molecular chain of the N atom of the maleimide ring, or there is a maleimide group at the end of both sides. . The bismaleimide compound may have maleimide groups other than both ends of the molecular chain. The maleimide group is represented by formula (8), and the N atom is bonded to the molecular chain of the bismaleimide compound. Also, the maleimide groups bonded to the bismaleimide compound may all be the same or different, but the maleimide groups at both ends of the molecular chain are preferably the same.

[chemical 14]

In formula (8), R ₁₁ each independently represent a hydrogen atom, or a linear or branched alkyl group having 1 to 4 carbons. Considering that R ₁₁ can more ideally react with the resin (A), both are preferably hydrogen atoms. The number of carbon atoms in the alkyl group is preferably 1-3, and more preferably 1-2, in view of being able to react with the resin (A) more ideally. As for the linear or branched alkyl group, refer to the aforementioned R ¹³ .

As such a bismaleimide compound, the maleimide compound represented by formula (9) is mentioned, for example. These may be used alone or in combination of two or more compounds having different repeating numbers of a in formula (9) as appropriate.

[chemical 15]

In formula (9), a represents the integer of 1-10. a Considering that the resin composition has a more ideal viscosity when mounting the resin composition layer on the chip, and can more ideally control the rise of the melt viscosity during mounting, it is preferably an integer of 1 to 6. The maleimide compound represented by formula (9) may be a mixture of compounds with different a.

In view of obtaining a better reactivity with the resin (A), further improving the low-void property and wafer adhesion, and obtaining a resin composition with excellent solvent solubility, the maleimide compound (BA) Among the above, it is preferable to contain 2,2'-bis(4-(4-maleimidophenoxy)phenyl)propane, 1,2-bis(maleimido)ethane Alkane, 1,4-bis(maleimido)butane, 1,6-bis(maleimido)hexane, N,N'-1,3-phenylene dimaleyl imine, N,N'-1,4-phenylene dimaleimide, N-phenylmaleimide, a maleimide compound represented by the above formula (3), containing the above formula ( 4) The structural unit represented by and the bismaleimide compound containing maleimide groups at both ends of the molecular chain, the maleimide compound represented by the above formula (5), the bismaleimide compound represented by the above formula (6) One or more of the group consisting of maleimide compounds and maleimide compounds represented by the above formula (7), containing Aminophenoxy)phenyl)propane, a maleimide compound represented by the above formula (3), a compound containing a constituent unit represented by the above formula (4) and a maleimide group at both ends of the molecular chain Bismaleimide compound, maleimide compound represented by the above formula (5), maleimide compound represented by the above formula (6), and maleimide compound represented by the above formula (7) More than one kind in the group formed is more preferable. In addition, the maleimide compound (BA) is considered to have a tendency to obtain further excellent reactivity with the resin (A), and to obtain further excellent low-void property, wafer adhesiveness, and solvent solubility. From a viewpoint, a bismaleimide compound containing a maleimide compound represented by the above formula (3), a constituent unit represented by the above formula (4), and a maleimide group at both ends of the molecular chain More preferably, it is one or more selected from the group consisting of the compound, the maleimide compound represented by the above formula (5), and the maleimide compound represented by the above formula (6).

The maleimide compound (BA-1) is considered to obtain further excellent reactivity with the resin (A), and to obtain further excellent low-void properties, wafer adhesiveness, and solvent solubility, It is preferable to contain a maleimide compound represented by the above formula (3) and a bismaleimide compound containing a structural unit represented by the above formula (4) and a maleimide group at both ends of the molecular chain More than one of the groups formed.

The maleimide compound (BA-2) is considered to obtain further excellent reactivity with the resin (A), and to obtain further excellent low-void property, wafer adhesiveness, and solvent solubility, It is preferable to contain at least one kind selected from the group consisting of the maleimide compound represented by the above formula (5) and the maleimide compound represented by the above formula (6).

Commercially available maleimide compounds can also be used, and examples of 2,2'-bis(4-(4-maleimidophenoxy)phenyl)propane include: K･I Chemical Co., Ltd. BMI-80 (trade name) manufactured. Examples of maleimide compounds represented by formula (3) include: BMI-1000P (trade name, n3=14 (average value) in formula (3) manufactured by K･I Chemical Co., Ltd., weight average molecular weight: 3,700 ), K･I Chemical Co., Ltd. BMI-650P (trade name, n3=9 (average value) in formula (3)), K･I Chemical Co., Ltd. BMI-250P (trade name, formula (3) ) in n3=3~8 (average value)), K･I Chemical Co., Ltd. CUA-4 (trade name, n3=1 in formula (3)), etc. Bismaleimide compounds containing a structural unit represented by formula (4) and maleimide groups at both ends of the molecular chain include, for example: Nippon Kayaku Co., Ltd. MIZ-001 (trade name, containing A maleimide compound represented by formula (9), and a in formula (9) is a mixture of 1 to 6 (integer), weight average molecular weight: 3,900). The maleimide compound represented by formula (5) can be exemplified for example: BMI-70 (trade name; bis(3-ethyl-5-methyl-4-maleimide) manufactured by K.I Chemical Industry Co., Ltd. phenyl) methane, weight average molecular weight: 550). The maleimide compound represented by formula (6) can be enumerated for example: MIR-3000-70MT (trade name) manufactured by Nippon Kayaku Co., Ltd. (trade name, R in formula (6) ¹⁰ are all hydrogen atoms, and are n4 series 1 ~10 mixture, weight average molecular weight: 1,050). Examples of the maleimide compound represented by the formula (7) include BMI-2300 (trade name) manufactured by Daiwa Kasei Kogyo Co., Ltd.

(Citraconamide Compound (BB)) The citraconamide compound (BB) is not particularly limited, and examples include o-phthalic biscitraconimide, m-phenylene biscitraconimide, p-phenylene biscitraconimide, Citraconimide, 4,4-diphenylmethanebiscitraconimide, 2,2-bis[4-(4-citraconiminophenoxy)phenyl]propane, bis(3 ,5-Dimethyl-4-citraconiminophenyl)methane, bis(3-ethyl-5-methyl-4-citraconiminophenyl)methane, bis(3,5 -Diethyl-4-citraconimidophenyl)methane, 1,3-xylylenebis(citraconimide), N-[3-bis(trimethylsilyl)amino- 1-Propyl]citraconimide, N-[3-bis(triethylsilyl)amino-1-propyl]citraconimide, N-[3-bis(triphenylsilyl) )amino-1-propyl]citraconimide, N,N'-(m-xylylene)dicitraconimide, and N-[3-(methylenesuccinimide) base) benzyl citraconimide, a citraconamide compound represented by the following formula (10), a bismuth containing a structural unit represented by the above formula (4) and a citraconamide group at both ends of the molecular chain A citraconamide compound, a citraconamide compound represented by the following formula (11), and a citraconamide compound represented by the following formula (12). In addition, the biscitraconimide compound can refer to the above-mentioned bismaleimide compound. The detailed description of the constituent units represented by the formula (4) is as described above. Regarding the citraconimide group, in the above formula (8), at least one of _the R groups is a methyl group. In addition, it can be Refer to the structure of formula (8). The citraconimide compound (BB) can be used alone or in combination of two or more.

In view of obtaining a better reactivity with the resin (A), further improving the low-void property and wafer adhesion, and obtaining a resin composition with excellent solvent solubility, the citraconamide compound (BB) Among the above, it is preferable to contain a compound selected from a citraconyl imide compound represented by the following formula (10), a biscitric acid containing a structural unit represented by the above formula (4) and a citraconyl imide group at both ends of the molecular chain. One or more of the group consisting of a citraconimide compound, a citraconamide compound represented by the following formula (11), and a citraconamide compound represented by the following formula (12).

The citraconamide compound (BB-1) is considered to be able to obtain further excellent reactivity with the resin (A), and to obtain further excellent low-void properties, wafer adhesiveness, and solvent solubility, It is preferably a citraconamide compound represented by the following formula (10) and/or a biscitraconamide compound containing a structural unit represented by the above formula (4) and a citraconamide group at both ends of the molecular chain .

[chemical 16]

In the formula (10), n ⁶ represents an integer of 1 to 30.

The citraconamide compound (BB-2) is considered to be able to obtain further excellent reactivity with the resin (A), and to obtain further excellent low-void properties, wafer adhesiveness, and solvent solubility, It is preferably a citraconimide compound represented by the following formula (11) and/or a citraconimide compound represented by the following formula (12).

[chemical 17]

In formula (11), R ₈ each independently represent a hydrogen atom, a methyl group, or an ethyl group. R ₉ each independently represent a hydrogen atom or a methyl group.

[chemical 18]

In the formula (12), R ¹⁰ each independently represent a hydrogen atom or a methyl group, and n4 represents an integer of 1 or more, preferably an integer of 1 to 10. R ¹⁰ is preferably a hydrogen atom.

In the resin composition of the present embodiment, the content of the compound (B) is not particularly limited. Considering that it can obtain further excellent low-void property and chip adhesiveness, the content of the compound (B) is higher than that of the amino trisulfone novolac resin (A) It is preferably 40-85 parts by mass, more preferably 50-85 parts by mass, even more preferably 55-83 parts by mass, and still more preferably 60-80 parts by mass, based on 100 parts by mass of the compound (B).

In the resin composition of the present embodiment, the compound (B1 The content of ) is preferably 45 parts by mass to 90 parts by mass, more preferably 45 parts by mass to 85 parts by mass, and 45 parts by mass relative to the total of 100 parts by mass of compound (B1) and compound (B2). It is more preferably more than or equal to 78 parts by mass or less. Also, the content of the compound (B2) is preferably 10 parts by mass to 55 parts by mass, more preferably 15 parts by mass to 55 parts by mass, based on 100 parts by mass of the total of the compound (B1) and the compound (B2). , more preferably 22 parts by mass or more and 55 parts by mass or less.

In the resin composition of the present embodiment, in view of obtaining further excellent reactivity with the resin (A), and obtaining further excellent low-void property, chip adhesiveness, and solvent solubility, maleic acid The content of the imine compound (BA-1) is preferably 45 to 90 parts by mass, more preferably 45 to 85 parts by mass, with respect to 100 parts by mass of the total of the compound (BA-1) and the compound (BA-2). 45-78 parts by mass is even better. Also, the content of the maleimide compound (BA-2) is preferably 10 to 55 parts by mass, 15 to 55 parts by mass relative to the total of 100 parts by mass of the compound (BA-1) and the compound (BA-2). Parts are better, more preferably 22 to 55 parts by mass.

In the resin composition of the present embodiment, considering that further excellent low-void property and chip adhesiveness can be obtained, the content of the citraconamide compound (BB-1) is higher than that of the compound (BB-1) and The total of 100 parts by mass of the compound (BB-2) is preferably 45 to 90 parts by mass, more preferably 45 to 85 parts by mass, more preferably 45 to 78 parts by mass. Also, the content of the citraconamide compound (BB-2) is preferably 10 to 55 parts by mass, 15 to 55 parts by mass relative to 100 parts by mass of the total of the compound (BB-1) and the compound (BB-2). Parts are better, more preferably 22 to 55 parts by mass.

In the resin composition of the present embodiment, the content (total amount) of the resin (A) and the compound (B) is based on 100 parts by mass of the solid content of the resin in consideration of obtaining better low-void property and die adhesiveness. , should be more than 30 parts by mass, more preferably more than 50 parts by mass, more preferably more than 70 parts by mass, and can also be more than 80 parts by mass. The upper limit of the content (total amount) of the resin (A) and the compound (B) may be 100 parts by mass or less or 95 parts by mass or less with respect to 100 parts by mass of resin solid content.

[Flux Activator (C)] In the resin composition of this embodiment, it is preferable to further contain a flux activator (C) in order to exhibit flux activity during flip-chip mounting. The flux activator (C) is not particularly limited as long as it is an organic compound having one or more acidic sites in the molecule. The acidic sites are preferably, for example, phosphoric acid groups, phenolic hydroxyl groups, carboxyl groups, and sulfonic acid groups. It is considered that in a semiconductor device using the resin composition of this embodiment as an underfill material, it will be more effective in preventing solder, From the viewpoint of migration and corrosion of metals such as copper, phenolic hydroxyl groups or carboxyl groups are more preferable. The flux activator (C) can be used individually by 1 type or in mixture of 2 or more types suitably.

The flux activator (C) is not particularly limited. In order to fully remove the oxide film at the junction, the acid dissociation constant pKa is preferably not less than 3.8 and not more than 15.0, considering the preservation stability of the varnish and the layer having a resin composition. From the standpoint of storage stability and flux activity of the laminate (the underfill provided with the supporting base material), it is more preferably 4.0 or more and 14.0 or less.

The weight-average molecular weight or molecular weight of the flux activator (C) in the resin composition of the present embodiment is not particularly limited, and it is considered to prevent the flux activity from volatilizing before the display in flip-chip mounting, that is, after removing the bond From the point of view that the pre-oxidized flux activator (C) in the part has volatilized, the weight average molecular weight or molecular weight is preferably 200 or more, more preferably 250 or more. In order to have mobility as a flux activator and obtain sufficient flux activity, the weight average molecular weight or molecular weight of the flux activator (C) is preferably 8000 or less, more preferably 1000 or less, and more preferably 600 or less.

The flux agent active agent (C) is not particularly limited and may include, for example: rosinic acid, neoabietic acid, dehydroabietic acid, pimaric acid, and pimaric acid ), long leaf rosin acid (palustric acid), bisphenolic acid, dihydroabietic acid (dihydroabietic acid), tetrahydrorosinic acid, hydrogenated rosin ester, and rosin-modified maleic acid resin and other rosin-based resins; N,N' -Diamines such as bis(sulphonylene)-1,2-propanediamine and N,N'-bis(sulphonylene)-1,3-propanediamine; 2-[bis(4-hydroxybenzene base) methyl] benzoic acid. These flux activators (C) are ideal in view of their solubility in solvents, storage stability of varnishes, and storage stability of underfill materials provided with support substrates. Flux activators (C) include rosin-based Resin is better.

Among them, from the viewpoint of preventing deactivation by the compound (B), the flux activator (C) contains a compound selected from the group consisting of dehydrorosinic acid, bisphenolic acid, dihydrorosinic acid, tetrahydrorosinic acid, and hydrogenated rosin esters. , rosin-modified maleic acid resin, N,N'-bis(willowylene)-1,2-propanediamine, and N,N'-bis(willowylene)-1,3-propanediamine More than one kind in the group is more preferable. Also, these flux activators are considered to be low in reactivity, and are considered to hardly cause a reaction with the resin (A) and the compound (B), and to maintain sufficient flux activity necessary to remove the oxide film, more ideal. In addition, it is more preferable that the flux activator (C) is a hydrogenated rosin ester from the viewpoint of obtaining further excellent flux activity.

A commercial item can be used for a flux activator (C). Examples of rosin-based resins include KR-85 (trade name, the same below), KR-612, KR-614, KE-100, KE-311, PE-590, KE-359, KE-604, KR-120, KR-140, KR-614, D-6011, and KR-50M; MALKYD No32 (manufactured by Arakawa Chemical Industry Co., Ltd.).

In the resin composition of this embodiment, the content of the flux activator (C) is not particularly limited. Considering the insulation reliability and the viewpoint of ensuring sufficient flux activity during installation, the content of the flux activator (C) should ) and compound (B) in total of 100 parts by mass, preferably 5 to 70 parts by mass, more preferably 10 to 50 parts by mass, more preferably 15 to 40 parts by mass.

[Inorganic filler (D)] The resin composition of this embodiment further contains an inorganic filler (D) for the purpose of improving flame resistance, improving thermal conductivity, and reducing thermal expansion coefficient. By using the inorganic filler (D), the flame resistance and thermal conductivity of cured products such as films formed using the resin composition of this embodiment can be improved, and the thermal expansion coefficient can be reduced. In addition, the minimum melt viscosity of the resin composition can be ideally controlled. In consideration of suitability for use as an underfill material, the minimum melt viscosity of the resin composition is preferably 200 Pa･s or more and 30,000 Pa･s or less. In particular, since the resin composition of this embodiment contains the inorganic filler (D1) which will be described in detail later as the inorganic filler (D), low-void property and die adhesiveness are improved.

The inorganic filler (D) is not particularly limited. For example, it may contain various known inorganic compounds. The inorganic compound is not limited to the following, for example: natural silica, fused silica, amorphous silica, and Silica such as hollow silica; Aluminum compounds such as boehmite, aluminum hydroxide, aluminum oxide, and aluminum nitride; Magnesium compounds such as magnesium oxide and magnesium hydroxide; Calcium compounds such as calcium carbonate and calcium sulfate; Molybdenum, and molybdenum compounds such as zinc molybdate; boron nitride; barium sulfate; natural talc, calcined talc and other talc (talc); mica; short fiber glass, spherical glass, and fine powder glass (such as E glass, T glass, D glass) and other glass. Also, when it is desired to impart electrical conductivity or anisotropic electrical conductivity to the resin composition of this embodiment, metal particles such as gold, silver, nickel, copper, tin alloy, and palladium can also be used as the inorganic filler (D). Among them, the inorganic filler (D) preferably contains a material selected from silicon dioxide, aluminum hydroxide, alumina, boehmite, boron nitride, One or more types selected from the group consisting of aluminum nitride, magnesium oxide, and magnesium hydroxide, more preferably including one or more types selected from the group consisting of silicon dioxide, aluminum oxide, and boron nitride, wherein, is Silica is even more preferred. These inorganic fillers (D) can be used individually by 1 type or in mixture of 2 or more types suitably.

Among the inorganic fillers (D), functional groups such as (meth)acrylic, vinyl, styryl, or phenyl do not exist on the surface of the inorganic compound itself of the above specific example. On the other hand, the inorganic filler (D) in this embodiment contains a functional group containing at least one kind selected from the group consisting of (meth)acrylic, vinyl, styryl, and phenyl groups ( d) Inorganic filler (D1). In addition, in the present embodiment, "phenyl"("-C ₆ H ₅ ") means one directly bonded to a silicon atom or a carbon atom, and for example, a phenyl group directly bonded to a nitrogen atom (aminophenyl ) etc. shall be distinguished as different. The functional group (d) in such an inorganic filler (D1) has a high reactivity with the compound (B), so it is considered that the reaction between the compound (B) and the inorganic filler occurs due to the heat after the semiconductor wafer is mounted and post-cured. (D1) to form a strong chemical bond. As a result, it is considered that voids that may be generated after semiconductor wafer mounting and post-curing can be suppressed, and even after semiconductor wafer mounting and post-curing, peeling of hardened products from the wafer and substrate can be preferably suppressed.

The functional group (d) in this embodiment is not particularly limited as long as it contains at least one selected from the group consisting of (meth)acrylic group, vinyl group, styryl group, and phenyl group, considering low porosity From the viewpoint of wafer adhesiveness, it is preferable to further contain a silicon atom that is directly connected to a group containing one or more kinds selected from the group consisting of (meth)acrylic group, vinyl group, styryl group, and phenyl group. Bonding would be ideal. Such a silicon atom and a functional group (d) containing one or more groups selected from the group consisting of (meth)acrylic group, vinyl group, styryl group, and phenyl group and directly bonded to each other are preferably those containing the selected One or more groups selected from the group consisting of (meth)acryloxyalkylsilyl, vinylsilyl, styrylsilyl, and phenylsilyl, containing a group selected from (methyl) One or more groups selected from the group consisting of an acryloxyalkylsilyl group and a vinylsilyl group are more preferable. The carbon number of the alkyl moiety in the (meth)acryloxyalkylsilyl group is preferably 1-6, more preferably 1-3.

The inorganic filler (D1) in the present embodiment preferably includes a compound (d1) having a functional group (d) and an inorganic filler not having the functional group (d) in consideration of low porosity and wafer adhesion. The reaction product of (d2). The compound (d1) is not particularly limited as long as it can introduce a predetermined functional group to the surface of the inorganic filler (d2), and examples include: At least one silane coupling agent of the group consisting of phenyl groups. As such a silane coupling agent, a silane coupling agent commonly used for surface treatment of inorganic substances can be suitably used. Its specific examples are not limited to the following, but include vinyl silane-based silane coupling agents (with (meth)acrylic acid) such as vinyltrimethoxysilane and γ-(meth)acryloxypropyltrimethoxysilane. base and/or vinyl silane compounds); phenylsilane-based silane coupling agents such as trimethoxyphenylsilane (silane compounds with phenyl groups); styrene-based silane-based silane coupling agents such as styrene trimethoxysilane (silane compound with styryl group), etc. These silane coupling agents can be used individually by 1 type or in mixture of 2 or more types suitably. Among the above, in view of low voids and wafer adhesiveness, the compound (d1) preferably includes a vinyl silane-based silane coupling agent (silane compound having a (meth)acrylic group and/or vinyl group), And one or more of the group consisting of styrene silane-based silane coupling agents (silane compounds with styrene groups), preferably including vinyl silane-based silane coupling agents, including vinyl trialkoxy silane And more preferably at least one of the group consisting of γ-(meth)acryloxypropyltrialkoxysilane, including vinyltrimethoxysilane and γ-(meth)acryloxysilane More preferably one or more of the group consisting of propyltrimethoxysilane. The inorganic filler (d2) is not particularly limited. As for the inorganic compound that can be included as the inorganic filler (D), the above-mentioned specific examples can be used. Considering the viewpoint of low porosity and chip adhesion, it is preferable to include a compound selected from two At least one selected from the group consisting of silicon oxide, aluminum hydroxide, aluminum oxide, boehmite, boron nitride, aluminum nitride, magnesium oxide, and magnesium hydroxide, preferably including silicon dioxide. The preparation method of the above-mentioned reaction product is not particularly limited, and various known methods can be appropriately adopted for the treatment with a silane coupling agent. For example, when the inorganic filler (d2) is silica, the above treatment may be performed in a gas phase or in a liquid phase. In addition, the content of the functional group (d) in the inorganic filler (D1) is not particularly limited, and when the inorganic filler (d2) is silica, the content of the functional group (d) relative to 100 parts by mass of silica 1 to 10 parts by mass may also be used.

In addition, when the inorganic filler (d2) is silica, specific examples of the above-mentioned reaction product are not limited to the following, and examples include: 0.3 μm SV-EM1 ( trade name), SC1050-MLQ (trade name) with vinyltrimethoxysilane surface treatment, SC2050-MNU (trade name) with vinyltrimethoxysilane surface treatment, 3-methacryloxy YA050C-MJE (trade name) surface-treated with propyltrimethoxysilane, Y50SV-AM1 (trade name) surface-treated with vinyltrimethoxysilane, Y50SP surface-treated with phenyltrimethoxysilane - AM1 (trade name), etc. Among the above, considering the viewpoints of low porosity and wafer adhesion, the commercial products of the above-mentioned reaction products preferably include YA050C-MJE (trade name), Y50SV-AM1 (trade name), and Y50SP-AM1 (trade name). ), more preferably including one or more selected from the group consisting of YA050C-MJE (trade name) and Y50SV-AM1 (trade name).

The average particle diameter of the inorganic filler (D) is not particularly limited. When using the resin composition of this embodiment as the underfill material, it is considered that the pitch of the electrodes arranged on the wafer is narrowed and the gap between the electrodes is narrowed. From a viewpoint, it is preferably 3 μm or less, more preferably 1 μm or less, and may be 0.1 μm or less. The lower limit of the average particle diameter is not particularly limited, and is, for example, 10 nm. In addition, in the present embodiment, the "average particle diameter" of the inorganic filler (D) means the median diameter of the inorganic filler (D). Here, the median particle size means that when the particle size distribution of the powder is divided into two groups based on a certain particle size, the volume of the particles on the larger particle size side and the volume of the particles on the smaller particle size side account for the total volume respectively. 50% of the particle size of the powder. The average particle size (median particle size) of the inorganic filler (D) was measured by a wet laser diffraction-scattering method.

In the resin composition of the present embodiment, the content of the inorganic filler (D) is not particularly limited. Considering insulation reliability and ensuring sufficient flux activity during installation, the content of the inorganic filler (D) should It is preferably 20 to 500 parts by mass, more preferably 50 to 400 parts by mass, and even more preferably 70 to 300 parts by mass, with the total of 100 parts by mass of the compound (B). The upper limit of content of an inorganic filler (D) may be 250 mass parts. Also, from the viewpoint of low porosity and wafer adhesiveness, the content of the inorganic filler (D1) is preferably 20 to 100 parts by mass of the total of the aminotrisalpine novolak resin (A) and the compound (B). 500 parts by mass, more preferably 50 to 400 parts by mass, more preferably 70 to 300 parts by mass. The upper limit of content of an inorganic filler (D1) may be 250 mass parts.

[Hardening Catalyst (E)] The resin composition of this embodiment preferably further contains a hardening catalyst (E). When the resin composition contains the hardening catalyst (E), the reaction rate between the resin (A) and the compound (B) and the polymerization rate of the compound (B) can be more ideally controlled, and a resin with appropriate moldability can be obtained. compositional tendencies. The curing catalyst (E) is not particularly limited as long as it is a compound that can accelerate the reaction between the resin (A) and the compound (B) and the polymerization reaction of the compound (B). The hardening catalyst (E) can be used individually by 1 type or in mixture of 2 or more types.

The curing catalyst (E) in this embodiment is not particularly limited, and examples thereof include tertiary amines such as organic peroxides, imidazole compounds, azo compounds, and triethylamine, tributylamine, and derivatives thereof. Among them, the curing catalyst (E) preferably contains one selected from the group consisting of organic peroxides and imidazole compounds in view of obtaining a good reaction rate and polymerization rate, and obtaining a good curing rate. Of the above, it is more preferable to include both the organic peroxide and the imidazole compound.

In the present embodiment, the content of the curing catalyst (E) is not particularly limited, but in view of obtaining a good curing rate, it is 100 parts by mass relative to the total of the aminotrisalpine novolak resin (A) and the compound (B). , preferably 0.05 to 10 parts by mass, more preferably 0.05 to 8 parts by mass.

(organic peroxide) If the organic peroxide in this embodiment is a compound that releases an active substance (free radical) that can accelerate the reaction between the resin (A) and the compound (B) and the polymerization reaction of the compound (B) due to heat, there is no Particularly limited, known organic peroxides can be used. An organic peroxide can be used individually by 1 type or in mixture of 2 or more types.

In this embodiment, the 10-hour half-life temperature of the organic peroxide is not particularly limited, but it is preferably 100° C. or higher, and more preferably 110° C. or higher from the viewpoint of manufacturability. In order to increase the temperature of the solvent removal step during production, the organic peroxide should preferably meet the 10-hour half-life temperature in the aforementioned range.

Examples of organic peroxides include dicumyl peroxide, bis(2-tertiary butylperoxyisopropyl)benzene, 1,1,3,3-tetramethylbutyl hydroperoxide, 2, 5-Dimethyl-2,5-bis(tertiary butyl peroxide)hexyne-3, benzoyl peroxide, di(tertiary butyl) peroxide, methyl ethyl ketone peroxide, and cyclohexanone peroxide Oxides and other ketone peroxides; 1,1-bis(tertiary butyl peroxide)cyclohexane, and 2,2-bis(4,4-bis(tertiary butyl peroxide)cyclohexyl)propane, etc. Peroxyketal; tertiary butyl hydroperoxide, p-menthane (menthane) hydroperoxide, dicumyl hydroperoxide, cumene hydroperoxide, and tertiary butyl hydroperoxide, etc. ; Bis(2-tertiary butyl peroxide cumene)benzene, 2,5-dimethyl-2,5-di(tertiary butyl peroxide)hexane, tertiary butyl peroxide cumene , Di(tertiary hexyl) peroxide, 2,5-dimethyl-2,5-bis(tertiary butyl peroxide)hexyne-3, α,α'-bis(tertiary butyl peroxide ) dicumyl, and di(tertiary butyl) peroxide and other dialkyl peroxides; diperoxybenzoyl, and bis(4-methylbenzoyl) peroxide and other diacyl peroxides peroxydicarbonate such as di-n-propyl peroxydicarbonate and diisopropyl peroxydicarbonate; 2,5-dimethyl-2,5-bis(benzoyl peroxide ) hexane, peroxyesters such as tertiary hexyl peroxybenzoate, tertiary butyl peroxybenzoate, and tertiary butyl peroxy-2-ethylhexanoate, etc. Considering that a better reaction speed and hardening speed can be obtained, it is preferably selected from dicumyl peroxide, bis(2-tertiary butylperoxyisopropyl)benzene, 1,1,3,3-tetrafluoroethylene Methylbutyl hydroperoxide, 2,5-dimethyl-2,5-bis(tertiary butylperoxy)hexyne-3, α,α'-bis(tertiary butylperoxy)diiso One or more species from the group consisting of propylbenzene and tertiary butyl hydroperoxide.

In the resin composition of the present embodiment, the content of the organic peroxide is not particularly limited. Considering that a better reaction rate and curing rate can be obtained, compared with the amino trisanthene novolac resin (A) and the compound ( The total of 100 parts by mass of B) is preferably 0.05 to 10 parts by mass, more preferably 0.05 to 8 parts by mass.

(imidazole compound) The imidazole compound is not particularly limited as long as it can accelerate the reaction between the resin (A) and the compound (B) and the polymerization reaction of the compound (B), and known imidazole compounds can be used. The imidazole compound can be used 1 type or in mixture of 2 or more types.

Examples of imidazole compounds include 2-ethyl-4-methylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-phenylimidazole, 2,4,5-triphenylimidazole, etc. . Among them, 2-ethyl-4-methylimidazole is preferable from the viewpoint of easier adjustment of the reaction rate and curing rate.

In the resin composition of the present embodiment, the content of the imidazole compound is not particularly limited. Considering that the adjustment of the reaction speed and the curing speed is easier, the ratio of the amino trisanthene novolak resin (A) and the compound (B) A total of 100 parts by mass is preferably 0.05 parts by mass to 10 parts by mass, more preferably 0.05 parts by mass to 8 parts by mass.

(azo compounds) The azo compound is not particularly limited as long as it can accelerate the reaction between the resin (A) and the compound (B) and the polymerization reaction of the compound (B), and known azo compounds can be used. An azo compound can be used 1 type or in mixture of 2 or more types. Azo compounds include, for example: 2,2'-azobisbutyronitrile, 2,2'-azobis(2,4-dimethylvaleronitrile), and 2,2'-azobis(4- Methoxy-2,4-dimethylvaleronitrile), etc.

In the resin composition of the present embodiment, the content of the azo compound is not particularly limited. Considering that a better reaction rate and curing rate can be obtained, the ratio of the amino tris phenolic novolak resin (A) and the compound (B ) to a total of 100 parts by mass, preferably 0.05 to 10 parts by mass, more preferably 0.05 to 8 parts by mass.

[other ingredients] In the resin composition of the present embodiment, in addition to containing the amino trisanthene phenolic novolac resin (A), the compound (B), and the inorganic filler (D), not only the above-mentioned flux activator (C), hardener The catalyst (E) may contain one or more other components alone.

Other components are not particularly limited, and examples thereof include flexibility-imparting components. The flexibility imparting component is not particularly limited as long as it can impart flexibility to the layer containing the resin composition. In addition to such components, for example, amino trisanthene novolac resin (A), compound (B), flux activator (C), inorganic filler (D), and hardening catalyst (E) can be listed. List: polyimide, polyamideimide, polystyrene, polyolefin, styrene-butadiene rubber (SBR), isoprene rubber (IR), butadiene rubber (BR), ( Thermoplastic polymer compounds such as meth)acrylonitrile butadiene rubber (NBR), polyurethane, polypropylene, (meth)acrylic oligomer, (meth)acrylic polymer, and silicone resin. These flexibility imparting components can be used individually by 1 type or in mixture of 2 or more types suitably.

The resin composition of this embodiment may contain other components, that is, may contain a silane coupling agent separately from the inorganic filler (D1). Such silane coupling agents can be exemplified as those that can be used in the preparation of the inorganic filler (D1). The content of the silane coupling agent is not particularly limited, and may be about 0.05 to 20 parts by mass relative to 100 parts by mass of the total of the aminotrisium novolak resin (A) and the compound (B).

In the resin composition of the present embodiment, a wetting and dispersing agent may be contained as another component for the purpose of further improving the manufacturability of the laminate, further improving the dispersibility of the filler, and the like. The wetting and dispersing agent is not particularly limited as long as it is a wetting and dispersing agent commonly used in paints and the like. Examples include DISPERBYK (registered trademark)-110 (trade name), DISPERBYK-111 (trade name), DISPERBYK-180 (trade name), DISPERBYK-161 (trade name), BYK-W996 ( (trade name), BYK-W9010 (trade name), and BYK-W903 (trade name). These wetting and dispersing agents can be used individually by 1 type or in mixture of 2 or more types suitably. When using a wetting and dispersing agent, its content is not particularly limited, but it is preferably 0.1 to 5 parts by mass, or 0.5 to 5 parts by mass relative to 100 parts by mass of the inorganic filler (D) from the viewpoint of further improving the manufacturability of the laminate. 3 parts by mass are better. In addition, when two or more types of wetting and dispersing agents are used in combination, their total amount should conform to the aforementioned ratio.

The resin composition of this embodiment may also contain other thermosetting resins or compounds (hereinafter also referred to as "other thermosetting resins") different from the aminotrisalpine novolac resin (A) and the compound (B) as other components. . Other thermosetting resins include, for example, cyanate ester compounds, benzodiazepine compounds, aromatic primary amine compounds, epoxy compounds, phenol compounds, modified polyphenylene ether compounds, alkenyl-substituted nadicimide compounds, Oxetane resins, and compounds having polymerizable unsaturated groups. These other thermosetting resins can be used individually by 1 type or in mixture of 2 or more types suitably. In this embodiment, considering the viewpoints of low voids and wafer adhesion, one or more selected from the group consisting of cyanate ester compounds, benzodiazepine compounds, and aromatic primary amine compounds may be included. The compound (F). The content of the compound (F) may be 1 to 50 parts by mass or 3 to 35 parts by mass relative to 100 parts by mass of the total of the aminotrisalpine novolak resin (A), the compound (B) and the compound (F). , and may also be 5 to 30 parts by mass.

In the resin composition of the present embodiment, various additives may be contained as other components for various purposes within a range not impairing desired properties. Examples of additives include thickeners, lubricants, defoamers, leveling agents, brighteners, flame retardants, and ion trapping agents. These additives can be used individually by 1 type or in mixture of 2 or more types suitably. In the resin composition of this embodiment, the contents of these additives are not particularly limited, and are usually 0.01-10 parts by mass relative to 100 parts by mass of the total of the aminotrisalpine novolak resin (A) and the compound (B).

[Ideal use of resin composition] The resin composition of this embodiment is excellent in low void property and chip adhesiveness. When the resin composition of this embodiment is used as an underfill material in the form of a laminate, preferably as a precoat type underfill material, it has excellent low-void property and chip adhesion, and it also has bonding properties and insulation reliability. Also excellent. Since the resin composition of this embodiment has various excellent characteristics, it is more useful as an underfill material, and it is more useful as a precoat type underfill material. In addition, the lamination system will be described later.

The resin composition of this embodiment is ideal as an underfill material, and it is more ideal for a pre-coated underfill material. Therefore, the sheet obtained by using the resin composition and the layer containing the resin composition (also referred to as "resin composition") The composition layer") should be in a semi-hardened state (B stage). In addition, the details of the sheet and the resin composition layer will be described later. Since the sheet and the resin composition layer are in a semi-cured state, further excellent low-void property and die adhesiveness can be obtained. In this embodiment, the semi-hardened state (B stage) means that the components contained in the sheet or resin composition layer have not actively started to react (harden), but the sheet or resin composition layer is in a dry state, that is, The state in which the solvent is volatilized by heating to the extent that there is no stickiness also includes the state in which only the solvent is volatilized without heating and without hardening. In this embodiment, the minimum melt viscosity in the semi-hardened state (B stage) is usually 50,000 Pa･s or less. The lower limit of the lowest melt viscosity is, for example, 10 Pa･s or more. Considering the suitability for use as an underfill material, the minimum melt viscosity in the semi-hardened state (B stage) is preferably 200 Pa･s or more and 30,000 Pa･s or less. In addition, in this embodiment, the minimum melt viscosity is measured by the following method. That is, the resin composition is laminated on a support substrate or the like using a laminator to obtain a resin sheet with a thickness of about 0.4 to 0.6 mm, and the resin sheet is used as a sample, and a rheometer (HAAKE, manufactured by Thermo Fisher Scientific Co., Ltd.) MARS60 (trade name)) was used to measure the melt viscosity. The measurement uses a disposable parallel plate with a plate diameter of 8mm, and measures the melt viscosity of the resin sheet under the conditions of a heating rate of 10°C/min, a frequency of 10.0rad/s, and a strain of 0.1% in the range of 40°C to 300°C. The lowest melt viscosity refers to the viscosity at the lowest point in the range of 40°C to 300°C.

[Manufacturing method of resin composition] The manufacturing method of the resin composition of this embodiment is not specifically limited as long as it can obtain the thing which has the said composition. The resin composition, for example, can be prepared by mixing amino tris-alcohol novolak resin (A), compound (B), inorganic filler (D), flux activator (C) as needed, hardening catalyst (E), and other ingredients are properly mixed to prepare. It can also take the form of a varnish obtained by dissolving or dispersing these components in an organic solvent as needed. Varnishes are ideally used when making laminates. For the specific manufacturing method, please refer to the manufacturing method and examples of the laminated body described later.

The organic solvent is not particularly limited as long as it can dissolve or disperse each component in the resin composition of the present embodiment ideally and does not impair the effect of the resin composition of the present embodiment. Organic solvents include, for example, alcohols such as methanol, ethanol, and propanol; ketones such as acetone, methyl ethyl ketone (hereinafter sometimes referred to as "MEK" abbreviated as "MEK"), and methyl isobutyl ketone; dimethylacetamide, and Amides such as dimethylformamide; aromatic hydrocarbons such as toluene and xylene. These organic solvents can be used individually by 1 type or in mixture of 2 or more types suitably.

[resin sheet] The resin sheet contains the resin composition of this embodiment. Specifically, the resin sheet has a support substrate, and a resin layer disposed on one or both sides of the support substrate, and the resin layer contains the resin composition of the present embodiment. This resin sheet is also called a laminated resin sheet. The resin layer of the resin sheet is preferably in a semi-cured state (B stage) after coating the resin composition in the uncured state (A stage) on the support substrate. The method for producing such a resin sheet is preferably a method for generally producing a composite of a B-staged resin layer and a support substrate. Specifically, it is possible to use a resin composition in an uncured state (A stage) in the form of a varnish, apply the varnish to a support substrate such as copper foil using a known method such as a coating bar, and then In a dryer at 100-200°C, heat for 1-60 minutes, etc. to make it semi-hardened (B-staged) and make a resin sheet, etc. In addition, in the present embodiment, the uncured state (A stage) refers to a state in which the resin composition is hardly cured and is not gelled. The resin composition coated in front of the support substrate of the resin sheet is, for example, a mixture of constituent components of the resin composition (which may or may not contain a solvent), or a varnish in which the mixture is dissolved or dispersed in a solvent, and It is in an unhardened state (stage A).

The supporting substrate is not particularly limited, and examples thereof include polyethylene films, polypropylene films, polycarbonate films, polyethylene terephthalate films, ethylene tetrafluoroethylene copolymer films, and polyimide films. Organic films such as these; release films coated with a release agent on the surface of these films; conductive foils such as copper foil and aluminum foil; plate-shaped objects such as glass plates, SUS plates, and FRP.

The coating method is not particularly limited, and examples include: coating a solution obtained by dissolving a resin composition in a solvent on a support substrate using a coating bar, a die coater, a doctor blade, and a Baker applicator. method.

Among the resin sheets, the single-layer resin sheet can be obtained by molding a resin composition into a sheet. The manufacturing method of the single-layer resin sheet can be implemented according to the usual method, and there is no special limitation. For example, in the manufacturing method of a resin sheet, the solution which melt|dissolved a resin composition in a solvent is apply|coated and dried on a support base material, and the method of peeling or etching a support base material from a resin sheet is mentioned. In addition, a single-layer resin sheet can also be obtained by supplying a solution obtained by dissolving a resin composition in a solvent into a mold having a sheet-shaped cavity and drying it to form a sheet without using a support base material.

When making a resin sheet or a single-layer resin sheet, the drying conditions for removing the solvent are not particularly limited. If it is low temperature, the solvent will easily remain in the resin composition, and if it is high temperature, the hardening of the resin composition will proceed. It is suitable to dry at a temperature of 20~170°C for 1~90 minutes.

The thickness of the resin sheet or the resin layer of the single-layer resin sheet can be adjusted by the concentration of the solution of the resin composition and the thickness of the coating, and is not particularly limited. Generally speaking, if the thickness of the coating is thicker, the solvent will It is easy to remain, so it should be 0.1~500μm.

The resin sheet or the single-layer resin sheet can be used, for example, as a material at the time of forming a wiring circuit in a semiconductor wafer or a substrate for mounting a semiconductor chip.

[laminated body] By coating the resin composition of this embodiment on the support substrate, a laminate having a layer containing the resin composition excellent in low voids and die adhesiveness can be obtained. That is, the laminated body of this embodiment has a support base material, and the resin composition layer containing the resin composition of this embodiment laminated|stacked on a support base material. Such a laminate can be obtained by forming the resin composition of the present embodiment on a support substrate in a layer form. The support substrate is not particularly limited, and a polymer film can be used. Examples of polymer film materials include: polyvinyl chloride, polyvinylidene chloride, polyethylene, polypropylene, polybutene, polybutadiene, ethylene-propylene copolymer, polymethylpentene, ethylene-vinyl acetate Vinyl resins such as ester copolymers and ethylene-vinyl alcohol copolymers; polyester resins such as polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate; Urethane-based resins; polyimide-based resins; polyamide-based resins, etc. Examples of the supporting substrate include films containing these resins, and release films in which a release agent is coated on the surface of these films. Among them, films containing one or more resins selected from the group consisting of polyester-based resins, polyimide-based resins, and polyamide-based resins, and coating the surfaces of these films with The release film of the release agent is a film containing polyethylene terephthalate, which is a kind of polyester resin, or a film containing polyethylene terephthalate coated with a release film. The release film of the agent is better.

The thickness of the support substrate is not particularly limited, and it is considered that the production of the laminate is easier, such as better stability of the coating thickness when the resin composition is applied to the support substrate, and better stability of the laminate. From the viewpoint of good portability, the thickness is preferably 10-100 μm. The lower limit of the thickness of the support base material is more preferably 10 μm or more, more preferably 20 μm or more, and more preferably 25 μm or more, from the viewpoint of ensuring a higher yield at the time of manufacturing the laminate. The upper limit of the thickness of the support base material is 80 μm or less in consideration of the viewpoint that the support base material does not exist in the form of a constituent member of the semiconductor device in the end, but will be peeled off in the middle of the process, and the production cost of the laminate. Better, more preferably less than 50 μm.

The method of forming the resin composition-containing layer of the present embodiment on the support substrate, that is, forming the resin composition layer to produce the laminate of the present embodiment is not particularly limited. Such a production method includes, for example, applying a varnish obtained by dissolving or dispersing the resin composition of this embodiment in an organic solvent on the surface of a support substrate, heating and/or drying under reduced pressure, and removing the solvent to make The method of curing the resin composition of this embodiment to form a resin composition layer. Drying conditions are not particularly limited, and the content ratio of the organic solvent to the resin composition layer is usually 10 parts by mass or less, preferably 5 parts by mass or less, based on the total amount of the resin composition layer (100 parts by mass). to dry. The conditions for achieving this drying vary depending on the type and blending amount of the organic solvent in the varnish. For example, in the case of a varnish containing 10 to 200 parts by mass of methyl ethyl ketone relative to 100 parts by mass of the total of the amino trisphenol novolac resin (A) and the compound (B), it is dried at 90 to 160°C under 1 atmosphere 2~15 minutes is the approximate standard. The thickness of the resin composition layer in the laminated body of this embodiment is not particularly limited, considering the point of view that the resin composition layer can better remove low molecular weight volatile components when drying, and consider that it can more effectively and reliably function as From the viewpoint of the function of the laminate, the range of 5 to 500 μm is ideal, and the range of 10 to 100 μm is more preferable. After the laminated body of this embodiment is manufactured, a protective film may be laminated separately on the surface of the laminated body opposite to the surface having the supporting base material for storage purposes.

[Semiconductor wafer provided with resin composition layer and substrate for mounting semiconductor wafer provided with resin composition layer] The semiconductor wafer provided with the resin composition layer of this embodiment includes a semiconductor wafer and a layer (resin composition layer) laminated on the semiconductor wafer and formed using the resin composition of this embodiment. Also, the substrate for mounting a semiconductor chip provided with the resin composition layer of this embodiment includes a substrate for mounting a semiconductor chip and a layer (resin composition layer). In addition, the semiconductor wafer provided with the resin composition layer of the present embodiment may also be specified as having a semiconductor wafer and a layer (resin composition layer) including the resin composition of the present embodiment laminated on the semiconductor wafer. In addition, the substrate for mounting a semiconductor chip provided with the resin composition layer of this embodiment may also be specified as having a substrate for mounting a semiconductor chip and a layer containing the resin composition of the present embodiment laminated on the substrate for mounting a semiconductor chip. (resin composition layer).

The method of manufacturing the semiconductor wafer provided with the resin composition layer of this embodiment is not particularly limited. For example, the surface of the semiconductor wafer on which electrodes are formed, that is, the surface that is bonded to the substrate, faces the laminated body of this embodiment. A resin composition layer is bonded together, the support substrate in the laminate is peeled off, and then singulated with a dicing saw etc., whereby a semiconductor wafer provided with a resin composition layer can be obtained. Also, the method of manufacturing the semiconductor chip mounting substrate provided with the resin composition layer of this embodiment is not particularly limited. It is obtained by laminating the resin composition layers of the laminate and peeling off the support substrate in the laminate.

The method of bonding the laminated body of this embodiment to the semiconductor wafer or the semiconductor wafer mounting substrate is not particularly limited, and a vacuum pressure laminator can be preferably used. In this case, a method of pressing and laminating the laminated body of the present embodiment with an elastic body such as rubber is suitable. Lamination conditions are not particularly limited as long as they are conditions commonly used by persons with ordinary knowledge in the technical field to which the invention belongs, for example, a temperature of 50~140°C, a contact pressure in the range of 1~11kgf/ ^cm2 , and an environment below 20hPa Implement under reduced pressure. Smoothing of the bonded laminate may also be carried out after the lamination step by means of hot pressing of the metal sheets. The lamination step and the smoothing step can be continuously implemented using a commercially available vacuum pressure laminator. For laminates attached to semiconductor wafers or substrates for mounting semiconductor chips, in either case, the supporting base material will be removed before flip-chip mounting of the chips.

[semiconductor device] The semiconductor device of the present embodiment includes the semiconductor wafer provided with the resin composition layer of the present embodiment and/or the semiconductor chip mounting substrate provided with the resin composition layer of the present embodiment. The method of manufacturing the semiconductor device of the present embodiment is not particularly limited, and examples thereof include a method of mounting the semiconductor wafer provided with the resin composition layer of the present embodiment on a substrate for mounting a semiconductor chip. Moreover, you may mount a semiconductor chip on the board|substrate for semiconductor chip mounting which provided the resin composition layer of this embodiment. The method of mounting a semiconductor chip provided with a resin composition layer on a substrate for mounting a semiconductor chip, and the method of mounting a semiconductor chip on a substrate for mounting a semiconductor chip provided with a layer of a resin composition can ideally use a method corresponding to thermocompression bonding. Flip-chip bonder of construction method. Also, in this embodiment, the case where the semiconductor chip is flip-chip mounted on the substrate for mounting the semiconductor chip is briefly described, but the object of flip-chip mounting the semiconductor chip and using the resin composition of the present embodiment may be the semiconductor chip. Except for mounting boards. For example, the resin composition of this embodiment can also be used in the junction between a semiconductor wafer and a semiconductor chip when mounting a semiconductor chip on a semiconductor wafer, or to implement connection between semiconductor chips via TSV (Through Silicon Via) or the like. The effect of this embodiment can be obtained in any case of the bonding portion between the semiconductor chips in the chip laminated body. [Example]

Hereinafter, this embodiment is demonstrated more concretely using an Example and a comparative example. This embodiment is not limited in any way by the following examples. Each part by mass is a numerical value based on 100 parts by mass of the total amount of the aminotrisalpine novolac resin (A) and the compound (B).

[Preparation of resin composition and laminate] (Example 1) PHENOLITE (registered trademark) LA-1356 (trade name, DIC (stock), weight average molecular weight: 1,500, nitrogen content: 19% by mass, hydroxyl equivalent: 146g/eq., non-volatile content: 60% by mass) 45 parts by mass (27 parts by mass in terms of non-volatile content), as the formula of the first compound (B) ( 3) The maleimide compound represented (BMI-1000P (trade name), K･I Chemical Co., Ltd., in formula (3), n3=14 (average value), weight average molecular weight: 3,700) 40.5 parts by mass , Bis-(3-ethyl-5-methyl-4-maleimidophenyl)methane (BMI-70 (trade name), K･I Chemical Co., Ltd.) as the second compound (B) , weight average molecular weight 550) 22.5 parts by mass, as the maleimide compound (MIR-3000-70MT (trade name), Nippon Kayaku (stock), non-volatile Component 70% by mass, weight average molecular weight: 1050) 14.3 parts by mass (10 parts by mass in terms of non-volatile components), hydrogenated rosin ester (PINECRYSTAL (registered trademark) KR-140 (trade name) as a flux activator (C) ), Arakawa Chemical Industry Co., Ltd., acid dissociation constant pKa: 4.7, weight average molecular weight: 521) 25 parts by mass, silica (YA050C-MJE (trade name), Admatechs ( stock), methacrylic silane surface-treated silica, solid content 50% by mass, dispersion medium: MEK, average particle diameter: 50nm) 400 parts by mass (200 parts by mass in terms of non-volatile components), as the first hardening contact The medium (E) is 2-ethyl-4-methylimidazole (2E4MZ, Shikoku Chemical Industry Co., Ltd., 50% by mass of non-volatile content) of imidazole compound (1 mass in terms of non-volatile content) parts), and as the second hardening catalyst (E) is α, α'-two (tertiary butyl peroxide) dicumyl (PERBUTYL (registered trademark) P) of organic peroxides, NOF ( stock), 10-hour half-life temperature: 119.20°C) 4 parts by mass were mixed, and stirred in a hot water bath at 60°C using a high-speed stirring device for 40 minutes, and then MEK was added to obtain a solid content concentration of 60% by mass varnish. This varnish is coated on the polyethylene terephthalate film (TR1-38 (trade name, support substrate), UNITIKA (stock)) of the thickness 38 μm of release agent coating on the surface, under 1 atmospheric pressure, It heat-dried at 100 degreeC for 5 minutes, and obtained the laminated body whose thickness of a resin composition layer was 30 micrometers. In addition, LA-1356 (trade name, manufactured by DIC) as the amino trisanthene novolak resin (A) is a compound represented by formula (1) (a mixture of compounds represented by formula (1), and the mixture contains R ₁ is each independently a hydrogen atom or a methyl group, l, m, and n are each independently an integer of 1 to 6, and (l+m+n) is an integer of 3 to 18), and formula (2) The compound represented (is a mixture of compounds represented by formula (2), and the mixture includes R ₂ each independently being a hydrogen atom or a methyl group, and o, p, q, r, and s each independently being one of 1 to 4 Integer, (o+p+q+r+s) is a mixture of compound groups of integers from 5 to 20), and in the mixture, the compound (mixture) represented by formula (1) and the compound (mixture) represented by formula (2) ) The mass ratio (formula (1): formula (2)) is 65 (parts by mass): 35 (parts by mass). Also, YA050C-MJE is a reaction product of silica and 3-methacryloxypropyltrimethoxysilane. That is to say, YA050C-MJE is a functional group having a structure obtained by reacting at least one silanol group on the surface of silicon dioxide with at least one methoxy group in the following formula (13). The owner of the silicon surface is evaluated.

[chemical 19]

(Example 2) Replace the YA050C-MJE of Example 1 as the inorganic filler (D) with a slurry silica (Y50SV-AM1 (trade name), Admatechs (stock), vinyl silane surface-treated silica, solid content 50 mass %, dispersion medium: MEK, average particle diameter: 50 nm) 400 mass parts (200 mass parts in terms of non-volatile components), except that, it carried out similarly to Example 1, and obtained the varnish. Using this varnish, it carried out similarly to Example 1, and obtained the laminated body whose resin composition layer thickness was 30 micrometers. In addition, Y50SV-AM1 is the reaction product of silicon dioxide and vinyltrimethoxysilane. That is, YA050C-MJE is a functional group having a structure obtained by the reaction of at least one silanol group on the surface of silicon dioxide with at least one methoxy group in the following formula (14). The owner of the silicon surface is evaluated.

[chemical 20]

(Example 3) Replace the YA050C-MJE of Example 1 as the inorganic filler (D) with slurry silica (Y50SP-AM1 (trade name), Admatechs (stock), phenylsilane surface-treated silica, solid content 50 % by mass, dispersion medium: MEK, average particle diameter: 50 nm) and 400 parts by mass (200 parts by mass in terms of non-volatile components), and a varnish was obtained in the same manner as in Example 1. Using this varnish, it carried out similarly to Example 1, and obtained the laminated body whose resin composition layer thickness was 30 micrometers. In addition, Y50SP-AM1 is the reaction product of silicon dioxide and phenyltrimethoxysilane. That is, YA050C-MJE is a functional group having a structure obtained by reacting at least one silanol group on the surface of silicon dioxide with at least one methoxy group in the following formula (15). The owner of the silicon surface is evaluated.

[chem 21]

(Example 4) The amount of YA050C-MJE in Example 1 was changed to 200 parts by mass (100 parts by mass in terms of non-volatile components), and the amounts of LA-1356, BMI-70 and MIR-3000-70MT were changed to Except 20 mass parts (non-volatile matter conversion), 27.3 mass parts (non-volatile matter conversion), and 12.2 mass parts (non-volatile matter conversion), it carried out similarly to Example 1, and obtained the varnish. Using this varnish, it carried out similarly to Example 1, and obtained the laminated body whose resin composition layer thickness was 30 micrometers.

(comparative example 1) Replace the YA050C-MJE in Example 1 as the inorganic filler (D) with slurry silica (YA050C-MJM (trade name), Admatechs (stock), phenylaminosilane surface-treated silica, solid A varnish was obtained in the same manner as in Example 1 except that the component was 50% by mass, dispersion medium: MEK, average particle diameter: 50 nm) and 400 parts by mass (200 parts by mass in terms of non-volatile components). Using this varnish, it carried out similarly to Example 1, and obtained the laminated body whose resin composition layer thickness was 30 micrometers. In addition, YA050C-MJM is the reaction product of silicon dioxide and phenylaminopropyltrimethoxysilane. That is, YA050C-MJM is a functional group having a structure obtained by the reaction of at least one silanol group on the surface of silicon dioxide with at least one methoxy group in the following formula (16). The owner of the silicon surface is evaluated.

[chem 22]

(comparative example 2) The amount of YA050C-MJE in Example 1 was changed to 200 parts by mass (100 parts by mass in terms of non-volatile components), and LA-1356 was not used, and the amount of BMI-70 and MIR-3000-70MT was changed to Except having changed into 41.5 mass parts (non-volatile matter conversion) and 18 mass parts (non-volatile matter conversion), respectively, it carried out similarly to Example 1, and obtained the varnish. Using this varnish, it carried out similarly to Example 1, and obtained the laminated body whose resin composition layer thickness was 30 micrometers.

(comparative example 3) BMI-1000P in Example 1 was not used, and the usage amounts of LA-1356, BMI-70, and MIR-3000-70MT were changed to 45 parts by mass (non-volatile content conversion), 38 parts by mass (non-volatile content Conversion) and 17 parts by mass (non-volatile matter conversion), and except that, it carried out similarly to Example 1, and obtained the varnish. Using this varnish, it carried out similarly to Example 1, and obtained the laminated body whose resin composition layer thickness was 30 micrometers.

(comparative example 4) Instead of using BMI-70 and MIR-3000-70MT in Example 1, the usage amounts of LA-1356 and BMI-1000P were changed to 40 parts by mass (in terms of non-volatile components) and 60 parts by mass (in terms of non-volatile components) respectively. ), except that, carry out and make varnish in the same manner as in Example 1. Using this varnish, it carried out similarly to Example 1, and obtained the laminated body whose resin composition layer thickness was 30 micrometers.

[Evaluation of laminated body] The following evaluation was implemented using the laminate obtained in Examples 1-4 and Comparative Examples 1-2. Their results are shown in Table 1. (1) Evaluation of voids after semiconductor wafer mounting The obtained laminate was cut into a square of 8 mm x 8 mm. For the laminated system after cutting, the copper circuit surface of 15 μm in the pad portion of the semiconductor chip mounting substrate (WALTS-KIT CC80(W)-0105JY (trade name) manufactured by WALTS Co., Ltd.) The resin composition layer in the laminated body after cutting is laminated|stacked. Thereafter, the polyethylene terephthalate film in the laminate was peeled off. Then, using a flip-chip bonder (LFB-2301 (trade name), Xinchuan Co., Ltd.), under the conditions of pedestal temperature 85°C, bond head temperature 120°C, load 100N, and time 1 second, On a semiconductor wafer having a Cu pillar made of copper and solder as an electrode, arrange it in such a way as to contact the peeled surface of the resin composition layer and perform thermocompression bonding, and then use a wire bonding head temperature of 260°C and a load of 50N. And the condition of time 4 seconds is further carried out by thermocompression bonding to implement the installation. The mounted sample (semiconductor wafer/resin composition layer/semiconductor wafer mounting substrate) is imaged using an ultrasonic precision flaw inspection image processing device (μ-SDS (trade name), manufactured by KJTD Co., Ltd.) , and confirm whether there are voids in the resin composition layer within the range of the semiconductor chip mounting part from the image data. When the ratio of the area occupied by the portion where voids are confirmed to the total area occupied by the resin composition layer within the range of the semiconductor chip mounting portion is less than 10%, the evaluation is A, and it is more than 10% and less than 20%. When it is more than 20% and less than 30%, it is rated as C, and when it is more than 30%, it is rated as D. In addition, the smaller the proportion of the area occupied by the portion confirmed to have voids, the more reliable a laminate can be obtained. In particular, if the proportion of the area occupied by the portion confirmed to have voids is less than 10%, then the It was evaluated that a laminate with very high insulation reliability could be obtained.

(2) Evaluation of voids after thermal hardening The obtained laminate was cut into a square of 8 mm x 8 mm. For the laminated system after cutting, the copper circuit surface of 15 μm in the pad portion of the semiconductor chip mounting substrate (WALTS-KIT CC80(W)-0105JY (trade name) manufactured by WALTS Co., Ltd.) The resin composition layer in the laminated body after cutting is laminated|stacked. Thereafter, the polyethylene terephthalate film in the laminate was peeled off. Then, using a flip-chip bonder (LFB-2301 (trade name), Xinchuan Co., Ltd.), under the conditions of pedestal temperature 85°C, wire bonding head temperature 120°C, load 100N, and time 1 second, the bonder made of copper On the semiconductor wafer with Cu pillars composed of solder and solder as electrodes, arrange them in such a way as to contact the peeled surface of the resin composition layer and perform thermocompression bonding. The conditions are further thermocompressed to implement the installation. After mounting, use an explosion-proof dryer (SPHH-201 (trade name) manufactured by ESPEC), heat treatment at a temperature of 180°C for 2 hours to harden, and then dry the hardened sample (semiconductor wafer/resin composition layer/semiconductor wafer) Mounting board) Use an ultrasonic precision inspection image processing device (μ-SDS (trade name), KJTD (KJTD) Co., Ltd.) to obtain image data, and use the image data to confirm the defects within the range of the semiconductor chip mounting part. Whether there are voids in the resin composition layer. When the ratio of the area occupied by the portion where voids are confirmed to the total area occupied by the resin composition layer within the range of the semiconductor chip mounting portion is less than 10%, the evaluation is A, and it is more than 10% and less than 20%. When it is more than 20% and less than 30%, it is rated as C, and when it is more than 30%, it is rated as D. In addition, the smaller the proportion of the area occupied by the portion confirmed to have voids, the more reliable a laminate can be obtained. In particular, if the proportion of the area occupied by the portion confirmed to have voids is less than 10%, then the It was evaluated that a laminate with very high insulation reliability could be obtained.

(3) Evaluation of wafer adhesion after thermosetting The obtained laminate was cut into a square of 8 mm x 8 mm. For the laminated system after cutting, the copper circuit surface of 15 μm in the pad portion of the semiconductor chip mounting substrate (WALTS-KIT CC80(W)-0105JY (trade name) manufactured by WALTS Co., Ltd.) The resin composition layer in the laminated body after cutting is laminated|stacked. Thereafter, the polyethylene terephthalate film in the laminate was peeled off. Then, using a flip-chip bonder (LFB-2301 (trade name), Xinchuan Co., Ltd.), under the conditions of pedestal temperature 85°C, wire bonding head temperature 120°C, load 100N, and time 1 second, the bonder made of copper On the semiconductor wafer with Cu pillars composed of solder and solder as electrodes, arrange them in such a way as to contact the peeled surface of the resin composition layer and perform thermocompression bonding. The conditions are further thermocompressed to implement the installation. After mounting, it heat-processed and hardened at the temperature of 180 degreeC for 2 hours in the explosion-proof dryer (SPHH-201 (trade name) manufactured by ESPEC). The hardened sample (semiconductor wafer/resin composition layer/substrate for semiconductor wafer mounting) was removed using a rotary polishing device (device name: MetaServ (registered trademark) 3000 (trade name), manufactured by BUEHLER Corporation) to remove only the semiconductor wafer, A laminate (A) of the resin composition layer and the substrate for mounting a semiconductor chip was obtained. The surface of the resin composition layer in the laminate (A) was observed visually, and the state of peeling was confirmed by whether or not the wiring layer derived from the semiconductor wafer was attached to the surface. When the aforementioned wiring layer remains entirely on the side of the resin composition layer, it is considered that no peeling has occurred, which is marked as A. When a part of the aforementioned wiring layer is missing, it is considered as a little peeling, which is marked as B. In the removal operation of the semiconductor wafer, the semiconductor When the wafer was peeled off, it was considered that peeling occurred, and it was marked as C. In addition, when the evaluation was A, since the semiconductor wafer did not come off from the resin composition layer and the wafer adhesiveness was very excellent, it was evaluated as a laminate with very high insulation reliability. When the evaluation is B, in this evaluation of wafer adhesiveness, partial peeling occurred, but it can still operate without any problem as a semiconductor device, so it was evaluated as a laminate with good wafer adhesiveness and high insulation reliability. In addition, in Table 1, after the semiconductor wafer is mounted, because there are many gaps between the semiconductor wafer and the resin composition layer, and there are many unbonded parts between the semiconductor wafer and the resin composition layer, and when the wafer adhesiveness cannot be measured, record to "E".

[Table 1] Example 1 Example 2 Example 3 Example 4 Comparative example 1 Comparative example 2 Comparative example 3 Comparative example 4 Void after semiconductor chip mounting A A A A D. C B B Void after heat hardening A A A A D. C B B Die Adhesion After Thermal Hardening A A B A E. C C C

This application is based on the Japanese patent application filed on October 15, 2021 (Japanese Patent Application No. 2021-169227) and the Japanese patent application filed on February 24, 2022 (Japanese Patent Application No. 2022-026578) , the contents of which are hereby incorporated by reference. [industrial availability]

The resin composition of this embodiment is excellent in low void property and chip adhesiveness, so it can be ideally used as a laminated body, a semiconductor chip provided with a resin composition layer, and a semiconductor chip mounting substrate provided with a resin composition layer , and materials for semiconductor devices. The resin composition is ideal as an underfill material, and is more ideal as a precoat type underfill material.

Claims (24)

A resin composition comprising: Amino trisulfone novolac resin (A), One or more compounds (B) selected from the group consisting of maleimide compounds (BA) and citraconamide compounds (BB), and Inorganic filler (D); The inorganic filler (D) includes an inorganic filler (D1) having at least one functional group (d) selected from the group consisting of a (meth)acrylic group, a vinyl group, a styrene group, and a phenyl group. ), The compound (B) comprises compound (B1) and compound (B2), The compound (B1) is selected from maleimide compounds (BA-1) having a weight average molecular weight of 3,000 to 9,500 and citraconimide compounds (BB-1) having a weight average molecular weight of 3,000 to 9,500. ) of one or more of the groups formed, The compound (B2) is selected from a maleimide compound (BA-2) with a weight average molecular weight of 300 or more and less than 3,000, and a citraconimide compound (BB) with a weight average molecular weight of 300 or more and less than 3,000. -2) More than one of the groups formed, Each of these weight average molecular weights is a value in terms of standard polystyrene obtained by gel permeation chromatography. The resin composition according to claim 1, wherein the functional group (d) further contains a silicon atom. The resin composition according to claim 1 or 2, wherein the inorganic filler (D1) comprises a compound (d1) having the functional group (d) and an inorganic filler (d2) not having the functional group (d) reaction product. The resin composition according to claim 3, wherein the compound (d1) having a functional group (d) is selected from a silane compound having a (meth)acrylic group and/or a vinyl group and a silane compound having a styryl group More than one species in the group. The resin composition according to claim 3, wherein the inorganic filler (d2) comprises silicon dioxide, aluminum hydroxide, aluminum oxide, boehmite, boron nitride, aluminum nitride, magnesium oxide, and one or more of the group consisting of magnesium hydroxide. The resin composition according to claim 3, wherein the compound (d1) having a functional group (d) is selected from a silane compound having a (meth)acrylic group and/or a vinyl group and a silane compound having a styryl group One or more of the group, and the inorganic filler (d2) contains silicon dioxide, aluminum hydroxide, aluminum oxide, boehmite, boron nitride, aluminum nitride, magnesium oxide, and magnesium hydroxide One or more of the groups formed. The resin composition according to claim 1 or 2, wherein the average particle diameter of the inorganic filler (D) is 3 μm or less. Such as the resin composition of claim 1 or 2, wherein the content of the inorganic filler (D) is 20~ 500 parts by mass. The resin composition as claimed in claim 1, wherein the amino trismetherone novolak resin (A) contains one selected from the group consisting of the compound represented by the following formula (1) and the compound represented by the following formula (2) above; In formula (1), R ₁ each independently represents a hydrogen atom, a methyl group, or an ethyl group, 1, m, and n each independently represent an integer of 0 to 10, and (l+m+n) represents an integer of 1 to 20 integer; In formula (2), R ₂ each independently represent a hydrogen atom, a methyl group, or an ethyl group, o, p, q, r, and s each independently represent an integer of 0 to 10, (o+p+q+r +s) means an integer from 1 to 20. The resin composition according to claim 1 or 2, wherein the content of the compound (B1) is not less than 45 parts by mass and not more than 90 parts by mass relative to 100 parts by mass of the total of the compound (B1) and the compound (B2), Content of this compound (B2) is 10 mass parts or more and 55 mass parts or less with respect to a total of 100 mass parts of this compound (B1) and this compound (B2). The resin composition according to claim 1 or 2, wherein the maleimide compound (BA-1) comprises maleimide compounds represented by the following formula (3) and One or more of the group consisting of structural units and bismaleimide compounds containing maleimide groups at both ends of the molecular chain; In the formula, n3 represents an integer from 1 to 30; In the formula, ^R11 represents a linear or branched alkylene group with 1 to 16 carbons, or a linear or branched alkenylene group with 2 to 16 carbons, and ^R12 represents a linear or branched alkenyl group with 1 to 16 carbons. A linear or branched alkylene group, or a linear or branched alkenylene group with 2 to 16 carbons, ^R13 each independently represents a hydrogen atom, a straight or branched chain with 1 to 16 carbons An alkyl group, or a linear or branched alkenyl group with 2 to 16 carbons, n ⁵ represents an integer of 1 to 10. The resin composition according to claim 1 or 2, wherein the maleimide compound (BA-2) comprises a maleimide compound represented by the following formula (5) and a maleimide compound represented by the following formula (6). More than one of the group consisting of lymide compounds; In the formula, R ₈ each independently represent a hydrogen atom, a methyl group, or an ethyl group, and R ₉ each independently represent a hydrogen atom or a methyl group; In the formula, R ¹⁰ each independently represent a hydrogen atom, an alkyl group with 1 to 5 carbons, or a phenyl group, and n4 represents an integer of 1 to 10. The resin composition according to claim 1 or 2 further contains a flux activator (C). The resin composition according to claim 13, wherein the flux activating agent (C) comprises a rosin-based resin. The resin composition according to claim 1 or 2 further contains a hardening catalyst (E). The resin composition according to claim 15, wherein the hardening catalyst (E) contains at least one selected from the group consisting of organic peroxides and imidazole compounds. The resin composition according to claim 1 or 2, wherein, the content of the amino trisphenolic novolak resin (A) is 100 parts by mass of the total of the amino trisphenolic novolak resin (A) and the compound (B) , being 1 to 60 parts by mass. The resin composition according to claim 1 or 2, wherein the content of the compound (B) is 40 to 85 parts by mass relative to the total of 100 parts by mass of the aminotrisium novolak resin (A) and the compound (B) share. The resin composition according to any one of claim 1 or 2, which is used as an underfill material. A laminate comprising: supporting substrate, and A resin composition layer laminated on the support substrate and containing the resin composition according to any one of claims 1 to 19. The laminate according to claim 20, wherein the thickness of the resin composition layer is in the range of 5 to 500 μm. A semiconductor wafer provided with a resin composition layer, comprising: semiconductor wafers, and A layer laminated on the semiconductor wafer using the resin composition according to any one of claims 1 to 19. A substrate for mounting a semiconductor chip provided with a resin composition layer, comprising: A substrate for mounting a semiconductor chip, and A layer formed using the resin composition according to any one of claims 1 to 19, which is laminated on the substrate for mounting a semiconductor chip. A semiconductor device having: A semiconductor wafer provided with a resin composition layer as in Claim 22 or a substrate for mounting a semiconductor chip provided with a resin composition layer as in Claim 23.