TW202334294A - Film-like underfill material, resin composition for film-like underfill material, method for preparing semiconductor chip with resin composition layer using film-like underfill material, method for preparing mounting board for semiconductor chip with resin composition layer, and method of manufacturing semiconductor device - Google Patents

Film-like underfill material, resin composition for film-like underfill material, method for preparing semiconductor chip with resin composition layer using film-like underfill material, method for preparing mounting board for semiconductor chip with resin composition layer, and method of manufacturing semiconductor device Download PDF

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TW202334294A
TW202334294A TW111138413A TW111138413A TW202334294A TW 202334294 A TW202334294 A TW 202334294A TW 111138413 A TW111138413 A TW 111138413A TW 111138413 A TW111138413 A TW 111138413A TW 202334294 A TW202334294 A TW 202334294A
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film
underfill material
resin composition
group
composition layer
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杉山源希
亀井孝幸
猪原勝利
高野健太郎
木田剛
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日商三菱瓦斯化學股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/18Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B32B27/20Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02Physical, chemical or physicochemical properties
    • B32B7/023Optical properties
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00Compositions of unspecified macromolecular compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L39/00Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen; Compositions of derivatives of such polymers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L93/00Compositions of natural resins; Compositions of derivatives thereof
    • C08L93/04Rosin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)

Abstract

An object of the invention is to provide a film-like underfill material that contains: a resin composition layer containing a thermosetting resin (A) and a visible light absorber (B), and a backing film, wherein the light transmittance of the film-like underfill material at a wavelength of 600 nm is within a range from 20 to 90%, and the difference between the light transmittance of the backing film at a wavelength of 600 nm and the light transmittance of the film-like underfill material at a wavelength of 600 nm is within a range from 2 to 80%.

Description

薄膜狀底部填充材、及薄膜狀底部填充材用樹脂組成物、以及使用了薄膜狀底部填充材之設有樹脂組成物層之半導體晶片之製造方法、設有樹脂組成物層之半導體晶片搭載用基板之製造方法、及半導體裝置之製造方法Film-like underfill material, resin composition for film-like underfill material, and method for manufacturing semiconductor wafer provided with resin composition layer using film-like underfill material, for mounting semiconductor wafer provided with resin composition layer Method for manufacturing substrate and method for manufacturing semiconductor device

本發明關於底部填充材、及樹脂組成物,詳細而言,關於設有樹脂組成物層之半導體晶片、設有樹脂組成物層之半導體晶片搭載用基板、及半導體裝置中能使用的薄膜狀底部填充材、及薄膜狀底部填充材用樹脂組成物、以及使用了薄膜狀底部填充材之設有樹脂組成物層之半導體晶片之製造方法、設有樹脂組成物層之半導體晶片搭載用基板之製造方法、及半導體裝置之製造方法。The present invention relates to an underfill material and a resin composition. Specifically, it relates to a semiconductor wafer provided with a resin composition layer, a semiconductor wafer mounting substrate provided with a resin composition layer, and a film-like bottom that can be used in a semiconductor device. Filling materials, resin compositions for film-like underfill materials, methods for manufacturing semiconductor wafers provided with resin composition layers using film-like underfill materials, and production of semiconductor wafer mounting substrates provided with resin composition layers Methods, and methods of manufacturing semiconductor devices.

以往,伴隨半導體裝置之小型化及高性能化,覆晶安裝作為將半導體晶片(以下有時省略稱為「晶片」)搭載於半導體晶片搭載用基板(以下有時省略稱為「基板」)之方法而受到關注。在覆晶安裝中,一般而言,係將晶片與基板接合後,於晶片與基板之間隙中填充底部填充材並使其硬化之工法。又,也有於晶片或基板填充底部填充材(也稱預塗型底部填充材)後,再使晶片、底部填充材、及基板進行接合之工法。Conventionally, as semiconductor devices have been miniaturized and improved in performance, flip-chip mounting has been used as a method of mounting a semiconductor wafer (hereinafter sometimes abbreviated as "wafer") on a semiconductor wafer mounting substrate (hereinafter sometimes abbreviated as "substrate"). method has attracted attention. In flip-chip mounting, generally speaking, after the chip and the substrate are bonded, an underfill material is filled in the gap between the chip and the substrate and hardened. In addition, there is also a method in which the wafer or the substrate is filled with an underfill material (also called a pre-coated underfill material), and then the wafer, the underfill material, and the substrate are bonded.

近年來,就底部填充材而言,作為預塗型底部填充材用途等,薄膜狀之底部填充材的需求逐漸提高。如此的薄膜狀之底部填充材可列舉例如:主樹脂含有使用了自由基聚合性單體之底部填充材、具有透明性且會交聯反應之樹脂、具有助熔劑活性之化合物、無機填充材等之半導體用薄膜等的技術(例如參照下述專利文獻1及2)。 [先前技術文獻] [專利文獻] In recent years, as for underfill materials, the demand for film-like underfill materials has been gradually increasing, such as for use as precoated underfill materials. Examples of such film-like underfill materials include underfill materials whose main resin contains radically polymerizable monomers, resins that are transparent and undergo cross-linking reactions, compounds with flux activity, inorganic fillers, etc. technologies such as thin films for semiconductors (see, for example, Patent Documents 1 and 2 below). [Prior technical literature] [Patent Document]

[專利文獻1]日本特表2015-503220號公報 [專利文獻2]日本特開2009-239128號公報 [Patent Document 1] Japanese Patent Publication No. 2015-503220 [Patent Document 2] Japanese Patent Application Publication No. 2009-239128

[發明所欲解決之課題][Problem to be solved by the invention]

半導體晶片等會在其表面上設置亦被稱為校準標記(alignment mark)之位置對準標記,該標記以攝像機等進行辨認並實施定位,而將半導體晶片等安裝於基板等。如此的校準標記之辨認性也受到設有樹脂組成物層之半導體晶片等之製作時的產率等影響,故如專利文獻2所記載之發明,近年已有人探討用以提高校準標記之辨認率的技術。Semiconductor wafers and the like are provided with alignment marks, also called alignment marks, on their surfaces. The marks are recognized and positioned using cameras and the like, and the semiconductor wafers and the like are mounted on substrates and the like. The visibility of such calibration marks is also affected by the production yield of semiconductor wafers provided with the resin composition layer, etc. Therefore, in recent years, studies have been conducted to improve the visibility of calibration marks, such as the invention described in Patent Document 2. technology.

另一方面,為了提高校準標記的辨認性,會考慮提高樹脂組成物層的光線透射率。但是,提高樹脂組成物層的光線透射率後之結果,會使樹脂組成物的光線透射率變得過高等,而樹脂組成物層的光線透射率與底部填充材所使用的基材薄膜的光線透射率之差變小的話,則不易利用目視判斷樹脂組成物層存在基材薄膜的正面還是背面,NCF的操作性、NCF配置時之作業效率會顯著降低。 綜上,要求操作性優良且能輕易且正確地安裝設有樹脂組成物層之半導體晶片之薄膜狀底部填充材的開發。 On the other hand, in order to improve the visibility of the calibration mark, it is considered to increase the light transmittance of the resin composition layer. However, as a result of increasing the light transmittance of the resin composition layer, the light transmittance of the resin composition becomes too high, and the light transmittance of the resin composition layer is different from the light transmittance of the base film used for the underfill material. If the difference in transmittance becomes small, it will be difficult to visually determine whether the resin composition layer exists on the front or back of the base film, and the operability of NCF and the work efficiency of NCF placement will be significantly reduced. In summary, there is a demand for the development of a film-like underfill material that has excellent operability and can easily and accurately mount a semiconductor wafer provided with a resin composition layer.

本發明為了解決上述課題,目的為提供能輕易且正確地安裝疊層了樹脂組成物層之對象物的薄膜狀底部填充材、及該薄膜狀底部填充材之製作所使用的薄膜狀底部填充材用樹脂組成物、以及使用了薄膜狀底部填充材之設有樹脂組成物層之半導體晶片之製造方法、設有樹脂組成物層之半導體晶片搭載用基板之製造方法、及半導體裝置之製造方法。 [解決課題之手段] In order to solve the above-mentioned problems, the object of the present invention is to provide a film-like underfill material that can easily and accurately mount an object on which a resin composition layer is laminated, and a film-like underfill material used in the production of the film-like underfill material. A resin composition, a method of manufacturing a semiconductor wafer provided with a resin composition layer using a film-like underfill material, a method of manufacturing a semiconductor wafer mounting substrate provided with a resin composition layer, and a method of manufacturing a semiconductor device. [Means to solve the problem]

本發明人們為了解決習知技術具有的前述課題而深入探討後之結果發現,特定的樹脂組成物可解決前述課題,乃至完成本發明。The present inventors conducted in-depth research in order to solve the above-mentioned problems of the conventional technology. As a result, they found that a specific resin composition can solve the above-mentioned problems, and finally completed the present invention.

亦即,本發明包含下列內容。 <1> 一種薄膜狀底部填充材,含有: 包含熱硬化性樹脂(A)及可見光吸收劑(B)之樹脂組成物層,及 基材薄膜; 前述薄膜狀底部填充材於波長600nm的光線透射率為20~90%,且 前述基材薄膜於波長600nm的光線透射率與前述薄膜狀底部填充材於波長600nm的光線透射率之差為2~80%。 <2> 如前述<1>所記載之薄膜狀底部填充材,其中,前述樹脂組成物層的厚度為5~500μm之範圍。 <3> 如前述<1>或前述<2>所記載之薄膜狀底部填充材,其中,前述可見光吸收劑(B)為選自有機染料、有機顏料、及它們的組合之群組中之至少1種。 <4> 如前述<1>~如前述<3>中任一項所記載之薄膜狀底部填充材,其中,前述可見光吸收劑(B)包含選自醌系、胺基酮系、陽離子系、花青系、酞菁系、喹吖酮系、二芳基/三芳基甲烷系、俘精酸酐(fulgide)、偶氮系、方酸菁(squarylium)系、氧雜菁(oxonol)系、亞苄基系、硝基系、亞硝基系、噻唑系、靛(indigoid)系、及它們的組合之群組中之至少1種之化合物。 <5> 如前述<1>~如前述<4>中任一項所記載之薄膜狀底部填充材,其中,前述可見光吸收劑(B)包含選自醌系、胺基酮系、及它們的組合之群組中之至少1種之化合物。 <6> 如前述<1>~如前述<5>中任一項所記載之薄膜狀底部填充材,其中,前述熱硬化性樹脂(A)包含選自馬來醯亞胺化合物、檸康醯亞胺化合物、及它們的組合之群組中之至少1種。 <7> 如前述<6>所記載之薄膜狀底部填充材,其中,前述馬來醯亞胺化合物包含選自2,2’-雙{4-(4-馬來醯亞胺基苯氧基)苯基}丙烷、1,2-雙(馬來醯亞胺基)乙烷、1,4-雙(馬來醯亞胺基)丁烷、1,6-雙(馬來醯亞胺基)己烷、N,N’-1,3-伸苯基二馬來醯亞胺、N,N’-1,4-伸苯基二馬來醯亞胺、N-苯基馬來醯亞胺、下式(3)表示之馬來醯亞胺化合物、含有下式(4)表示之構成單元以及在兩末端含有馬來醯亞胺基之雙馬來醯亞胺化合物、下式(5)表示之馬來醯亞胺化合物、下式(6)表示之馬來醯亞胺化合物、下式(7)表示之馬來醯亞胺化合物、及它們的組合之群組中之至少1種。 [化1] 式(3)中,n3表示1~30之整數。 [化2] 式(4)中,R 11表示碳數1~16之直鏈狀或分支狀之伸烷基、或碳數2~16之直鏈狀或分支狀之伸烯基。R 12表示碳數1~16之直鏈狀或分支狀之伸烷基、或碳數2~16之直鏈狀或分支狀之伸烯基。R 13各自獨立地表示氫原子、碳數1~16之直鏈狀或分支狀之烷基、或碳數2~16之直鏈狀或分支狀之烯基。n 5表示1~10之整數。 [化3] 式(5)中,R 8各自獨立地表示氫原子、甲基、或乙基。R 9各自獨立地表示氫原子或甲基。 [化4] 式(6)中,R 10各自獨立地表示氫原子、碳數1~5之烷基、或苯基。n4表示1~10之整數。 [化5] 式(7)中,R 10各自獨立地表示氫原子或甲基,n2表示1以上之整數。 <8> 如前述<7>所記載之薄膜狀底部填充材,其中,前述馬來醯亞胺化合物包含選自2,2’-雙{4-(4-馬來醯亞胺基苯氧基)苯基}丙烷、前述式(3)表示之馬來醯亞胺化合物、含有前述式(4)表示之構成單元及在兩末端含有馬來醯亞胺基之雙馬來醯亞胺化合物、前述式(5)表示之馬來醯亞胺化合物、前述式(6)表示之馬來醯亞胺化合物、前述式(7)表示之馬來醯亞胺化合物、及它們的組合之群組中之至少1種。 <9> 如前述<1>~如前述<8>中任一項所記載之薄膜狀底部填充材,更含有無機填充材(C)。 <10> 如前述<9>所記載之薄膜狀底部填充材,其中,前述無機填充材(C)的平均粒徑為400nm以下。 <11> 如前述<9>或前述<10>所記載之薄膜狀底部填充材,其中,前述無機填充材(C)包含選自二氧化矽、氫氧化鋁、氧化鋁、軟水鋁石(boehmite)、氮化硼、氮化鋁、氧化鎂、氫氧化鎂、及它們的組合之群組中之至少1種。 <12> 如前述<9>~如前述<11>中任一項所記載之薄膜狀底部填充材,其中,前述無機填充材(C)的含量相對於前述熱硬化性樹脂(A)之總量100質量份,為10~500質量份。 <13> 如前述<9>所記載之薄膜狀底部填充材,其中,前述無機填充材(C)的平均粒徑為400nm以下, 前述無機填充材(C)包含選自二氧化矽、氫氧化鋁、氧化鋁、軟水鋁石、氮化硼、氮化鋁、氧化鎂、氫氧化鎂、及它們的組合之群組中之至少1種, 前述無機填充材(C)的含量相對於前述熱硬化性樹脂(A)之總量100質量份,為10~500質量份。 <14> 如前述<1>~如前述<13>中任一項所記載之薄膜狀底部填充材,更含有助熔劑活性劑(D)。 <15> 如前述<14>所記載之薄膜狀底部填充材,其中,前述助熔劑活性劑(D)包含松香系樹脂。 <16> 如前述<1>~如前述<15>中任一項所記載之薄膜狀底部填充材,更含有硬化觸媒(E)。 <17> 如前述<16>所記載之薄膜狀底部填充材,其中,前述硬化觸媒(E)包含選自有機過氧化物、咪唑化合物、及它們的組合之群組中之至少1種。 <18> 如前述<1>~如前述<17>中任一項所記載之薄膜狀底部填充材,更含有硬化劑(F)。 <19> 如前述<18>所記載之薄膜狀底部填充材,其中,前述硬化劑(F)包含胺基三𠯤酚醛清漆樹脂。 <20> 一種薄膜狀底部填充材用樹脂組成物,含有: 熱硬化性樹脂(A),及 可見光吸收劑(B)。 <21> 一種設有樹脂組成物層之半導體晶片之製造方法,係使用如前述<1>~如前述<19>中任一項所記載之薄膜狀底部填充材。 <22> 一種設有樹脂組成物層之半導體晶片搭載用基板之製造方法,係使用如前述<1>~如前述<19>中任一項所記載之薄膜狀底部填充材。 <23> 一種半導體裝置之製造方法,係使用如前述<1>~如前述<19>中任一項所記載之薄膜狀底部填充材。 [發明之效果] That is, the present invention includes the following contents. <1> A film-like underfill material, containing: a resin composition layer containing a thermosetting resin (A) and a visible light absorber (B), and a base film; the film-like underfill material transmits light at a wavelength of 600 nm The ratio is 20 to 90%, and the difference between the light transmittance of the base film at a wavelength of 600 nm and the light transmittance of the film-like underfill material at a wavelength of 600 nm is 2 to 80%. <2> The film-like underfill material according to the above <1>, wherein the thickness of the resin composition layer is in the range of 5 to 500 μm. <3> The film-like underfill material according to the above <1> or the above <2>, wherein the visible light absorber (B) is at least one selected from the group consisting of organic dyes, organic pigments, and combinations thereof. 1 species. <4> The film-like underfill material according to any one of the above <1> to the above <3>, wherein the visible light absorber (B) contains a quinone-based, aminoketone-based, cationic-based, Cyanine series, phthalocyanine series, quinacridone series, diaryl/triarylmethane series, fulgide, azo series, squarylium series, oxonol series, sub-series At least one compound selected from the group consisting of benzyl, nitro, nitroso, thiazole, indigoid, and combinations thereof. <5> The film-like underfill material according to any one of the above <1> to the above <4>, wherein the visible light absorber (B) contains a quinone series, an aminoketone series, and a combination thereof. At least one compound from the group of combinations. <6> The film-like underfill material according to any one of the above <1> to the above <5>, wherein the thermosetting resin (A) contains a maleimide compound, citracinol At least one kind from the group consisting of imine compounds and combinations thereof. <7> The film-like underfill material according to the above <6>, wherein the maleimide compound contains a 2,2'-bis{4-(4-maleiminophenoxy group) )phenyl}propane, 1,2-bis(maleimino)ethane, 1,4-bis(maleimino)butane, 1,6-bis(maleimino) )Hexane, N,N'-1,3-phenylenedismaleimide, N,N'-1,4-phenylenedismaleimide, N-phenylmaleimide Amine, a maleimide compound represented by the following formula (3), a bismaleimine compound containing a structural unit represented by the following formula (4) and a maleimide group at both ends, the following formula (5 ), at least one of the group consisting of a maleimine compound represented by the following formula (6), a maleimine compound represented by the following formula (7), and a combination thereof . [Chemical 1] In formula (3), n3 represents an integer from 1 to 30. [Chemicalization 2] In formula (4), R 11 represents a linear or branched alkylene group having 1 to 16 carbon atoms, or a linear or branched alkenylene group having 2 to 16 carbon atoms. R 12 represents a linear or branched alkylene group having 1 to 16 carbon atoms, or a linear or branched alkenylene group having 2 to 16 carbon atoms. R 13 each independently represents a hydrogen atom, a linear or branched alkyl group having 1 to 16 carbon atoms, or a linear or branched alkenyl group having 2 to 16 carbon atoms. n 5 represents an integer from 1 to 10. [Chemical 3] In formula (5), R 8 each independently represents a hydrogen atom, a methyl group, or an ethyl group. R 9 each independently represents a hydrogen atom or a methyl group. [Chemical 4] In formula (6), R 10 each independently represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a phenyl group. n4 represents an integer from 1 to 10. [Chemistry 5] In formula (7), R 10 each independently represents a hydrogen atom or a methyl group, and n2 represents an integer of 1 or more. <8> The film-like underfill material according to the above <7>, wherein the maleimide compound contains a group selected from the group consisting of 2,2'-bis{4-(4-maleiminophenoxy) ) phenyl}propane, the maleimide compound represented by the aforementioned formula (3), the bismaleimide compound containing the structural unit represented by the aforementioned formula (4) and maleimide groups at both ends, In the group of the maleimine compound represented by the aforementioned formula (5), the maleimide compound represented by the aforementioned formula (6), the maleimine compound represented by the aforementioned formula (7), and combinations thereof At least 1 of them. <9> The film-like underfill material according to any one of the above <1> to the above <8>, further containing an inorganic filler (C). <10> The film-like underfill material according to the above <9>, wherein the average particle diameter of the inorganic filler (C) is 400 nm or less. <11> The film-like underfill material according to the above <9> or the above <10>, wherein the inorganic filler (C) contains silicon dioxide, aluminum hydroxide, alumina, and boehmite. ), at least one of the group consisting of boron nitride, aluminum nitride, magnesium oxide, magnesium hydroxide, and combinations thereof. <12> The film-like underfill material according to any one of the above <9> to the above <11>, wherein the content of the above-mentioned inorganic filler (C) is relative to the total amount of the above-mentioned thermosetting resin (A). The amount is 100 parts by mass, which is 10 to 500 parts by mass. <13> The film-like underfill material according to the above <9>, wherein the average particle diameter of the inorganic filler (C) is 400 nm or less, and the inorganic filler (C) contains a compound selected from the group consisting of silica, hydroxide and At least one of the group consisting of aluminum, alumina, boehmite, boron nitride, aluminum nitride, magnesium oxide, magnesium hydroxide, and combinations thereof, the content of the aforementioned inorganic filler (C) relative to the aforementioned heat The total amount of the curable resin (A) is 10 to 500 parts by mass per 100 parts by mass. <14> The film-like underfill material according to any one of the above <1> to the above <13>, further containing a flux activator (D). <15> The film-like underfill material according to the above <14>, wherein the flux activator (D) contains a rosin-based resin. <16> The film-like underfill material according to any one of the above <1> to the above <15>, further containing a curing catalyst (E). <17> The film-like underfill material according to the above <16>, wherein the curing catalyst (E) contains at least one selected from the group consisting of organic peroxides, imidazole compounds, and combinations thereof. <18> The film-like underfill material according to any one of the above <1> to the above <17>, further containing a hardener (F). <19> The film-like underfill material according to the above <18>, wherein the hardener (F) contains an amino tris-novolak resin. <20> A resin composition for film-like underfill materials, containing: a thermosetting resin (A), and a visible light absorber (B). <21> A method of manufacturing a semiconductor wafer provided with a resin composition layer, using the film-like underfill material described in any one of the above <1> to the above <19>. <22> A method of manufacturing a semiconductor wafer mounting substrate provided with a resin composition layer, using the film-like underfill material described in any one of the above <1> to the above <19>. <23> A method of manufacturing a semiconductor device using the film-like underfill material described in any one of the above <1> to the above <19>. [Effects of the invention]

根據本發明,可提供操作性優良且能輕易且正確地安裝疊層了樹脂組成物層之對象物的薄膜狀底部填充材、及該薄膜狀底部填充材之製作所使用的薄膜狀底部填充材用樹脂組成物、以及使用了薄膜狀底部填充材之設有樹脂組成物層之半導體晶片之製造方法、設有樹脂組成物層之半導體晶片搭載用基板之製造方法、及半導體裝置之製造方法。According to the present invention, it is possible to provide a film-like underfill material that is excellent in workability and can easily and accurately mount an object on which a resin composition layer is laminated, and a film-like underfill material used in the production of the film-like underfill material. A resin composition, a method of manufacturing a semiconductor wafer provided with a resin composition layer using a film-like underfill material, a method of manufacturing a semiconductor wafer mounting substrate provided with a resin composition layer, and a method of manufacturing a semiconductor device.

以下,針對用以實施本發明之形態(以下簡稱「本實施形態」)進行說明。另外,下列本實施形態係用以說明本發明之例示,本發明不限於僅本實施形態。Hereinafter, a mode for implementing the present invention (hereinafter referred to as "this embodiment") will be described. In addition, the following embodiment is an illustration for explaining the present invention, and the present invention is not limited only to this embodiment.

另外,本實施形態中,「(甲基)丙烯醯氧基」意指「丙烯醯氧基」及與其相對應之「甲基丙烯醯氧基」之兩者,「(甲基)丙烯腈」意指「丙烯腈」及與其相對應之「甲基丙烯腈」之兩者,「(甲基)丙烯酸」意指「丙烯酸」及與其相對應之「甲基丙烯酸」之兩者,「(甲基)丙烯酸酯」意指「丙烯酸酯」及與其相對應之「甲基丙烯酸酯」之兩者,「(甲基)烯丙基」意指「烯丙基」及與其相對應之「甲基烯丙基」之兩者。 又,本說明書中的「~」若無特別說明時,意指包含其兩端之數值作為上限值及下限值,且該上限值及下限值設定為單位相同。 In addition, in this embodiment, "(meth)acryloxy" means both "acryloxy" and its corresponding "methacryloxy", and "(meth)acrylonitrile" means both "acrylonitrile" and its corresponding "methacrylonitrile", "(meth)acrylic acid" means both "acrylic acid" and its corresponding "methacrylic acid", "(meth)acrylic acid" "(Meth)acrylate" means both "acrylate" and its corresponding "methacrylate", "(meth)allyl" means "allyl" and its corresponding "methyl Allyl" both. In addition, unless otherwise specified, "~" in this specification means that the values at both ends are included as the upper limit and the lower limit, and the upper limit and the lower limit are set in the same unit.

《薄膜狀底部填充材》 本實施形態之薄膜狀底部填充材(以下有時簡稱為「底部填充材」)係含有包含熱硬化性樹脂(A)及可見光吸收劑(B)之樹脂組成物層、及基材薄膜的薄膜狀底部填充材,其中,前述薄膜狀底部填充材於波長600nm的光線透射率為20~90%,且,前述基材薄膜於波長600nm的光線透射率與前述薄膜狀底部填充材於波長600nm的光線透射率之差為2~80%。 "Film-like underfill material" The film-like underfill material of this embodiment (hereinafter sometimes referred to as "underfill material") is a film containing a resin composition layer containing a thermosetting resin (A) and a visible light absorber (B), and a base film -like underfill material, wherein the light transmittance of the aforementioned film-like underfill material at a wavelength of 600 nm is 20 to 90%, and the light transmittance of the aforementioned base film at a wavelength of 600 nm is consistent with the light transmittance of the aforementioned film-like underfill material at a wavelength of 600 nm. The difference in light transmittance is 2~80%.

本實施形態中「薄膜狀底部填充材」係指含有基材薄膜、及樹脂組成物層的疊層體,並藉由將其層合於半導體晶圓(以下有時省略稱「晶圓」)等對象物後,將基材薄膜從樹脂組成物層剝離,來將「樹脂組成物層」填充在晶片與基板之間之所謂作為底部填充材而發揮功能之材料。又,樹脂組成物層為非導電性薄膜,亦稱Non Conductive Film(NCF)。 又,本實施形態中的樹脂組成物層,可使用後述本實施形態之薄膜狀底部填充材用樹脂組成物(以下有時簡稱為「樹脂組成物」)來製作。 In this embodiment, the "film-like underfill material" refers to a laminate including a base film and a resin composition layer, which is laminated on a semiconductor wafer (hereinafter sometimes abbreviated as "wafer") After waiting for the object, the base film is peeled off from the resin composition layer, and the "resin composition layer" is filled with a so-called underfill material between the chip and the substrate. In addition, the resin composition layer is a non-conductive film, also called Non Conductive Film (NCF). In addition, the resin composition layer in this embodiment can be produced using a resin composition for film-like underfill materials (hereinafter sometimes simply referred to as "resin composition") of this embodiment which will be described later.

本實施形態之底部填充材具有基材薄膜、及設置於該基材薄膜上之樹脂組成物層。樹脂組成物層例如可使用將未硬化狀態(A階)之樹脂組成物塗佈於基材薄膜後,製成半硬化狀態(B階)者。另外,本實施形態中,未硬化狀態(A階)係指樹脂組成物幾乎未硬化而未凝膠化之狀態。塗佈於基材薄膜前的樹脂組成物,例如為樹脂組成物之構成成分的混合物(可含溶劑也可不含)、或將該混合物溶解或分散於溶劑後之清漆的形態,且為未硬化狀態(A階)。又,半硬化狀態(B階)係指樹脂組成物層中所含的各成分尚未積極地開始反應(硬化),惟樹脂組成物層呈乾燥狀態,亦即加熱使溶劑揮發至無黏著性的程度為止之狀態,也包含不加熱且仍未硬化而僅使溶劑揮發之狀態。The underfill material of this embodiment has a base film and a resin composition layer provided on the base film. For example, the resin composition layer may be one in which a resin composition in an uncured state (A-stage) is applied to a base film and then converted into a semi-cured state (B-stage). In addition, in this embodiment, the uncured state (A stage) refers to the state in which the resin composition is hardly cured and has not gelled. The resin composition before coating on the base film is, for example, a mixture of the constituent components of the resin composition (which may or may not contain a solvent), or a varnish obtained by dissolving or dispersing the mixture in a solvent, and is unhardened. Status (A-level). In addition, the semi-hardened state (B stage) means that the components contained in the resin composition layer have not yet actively started to react (harden), but the resin composition layer is in a dry state, that is, the solvent is evaporated by heating to the point where it is non-adhesive. The state to this extent also includes a state in which the solvent is simply volatilized without heating and hardening.

(光線透射率) 本實施形態之底部填充材,由於薄膜狀底部填充材於波長600nm的光線透射率(以下有時簡稱為「底部填充材的光線透射率」)為20~90%,故該薄膜狀底部填充材的樹脂組成物層於波長600nm的光線透射率亦可定為20~90%之範圍。 因此,利用攝像機等,在配置於半導體晶片上時,介隔樹脂組成物層仍可正確且迅速地辨認設置於晶片等之表面的校準標記。藉此,將設有樹脂組成物層之半導體晶片安裝於基板等時,可輕易且正確地配置於對象上。 又,底部填充材之製造過程中,基材薄膜與樹脂組成物層之間、或樹脂組成物內有時會有異物混入。如此的異物之存在也有可能對樹脂組成物層之成膜性、絕緣可靠性等底部填充材的性能造成影響。因此,為了確保底部填充材的性能,製作底部填充材後常會實施使用了缺點檢查機等之異物檢查。另一方面,該異物檢查宜直接以底部填充材的狀態,亦即以基材薄膜與樹脂組成物層之疊層體的狀態實施。又,檢查機所為之異物檢查通常針對底部填充材會要求一定程度的透射率。本實施形態之底部填充材的光線透射率落在20~90%之範圍內,故可實施上述異物檢查。 (light transmittance) Since the underfill material of this embodiment has a light transmittance of 600 nm in wavelength (hereinafter sometimes referred to as "light transmittance of the underfill material") of 20 to 90%, the film-like underfill material The light transmittance of the resin composition layer at a wavelength of 600nm can also be set in the range of 20 to 90%. Therefore, using a camera or the like, when placed on a semiconductor wafer, the calibration mark provided on the surface of the wafer or the like can be accurately and quickly recognized through the resin composition layer. Thereby, when the semiconductor chip provided with the resin composition layer is mounted on a substrate or the like, it can be easily and accurately placed on an object. In addition, during the manufacturing process of the underfill material, foreign matter may sometimes be mixed between the base film and the resin composition layer or within the resin composition. The presence of such foreign matter may also affect the performance of the underfill material such as film-forming properties and insulation reliability of the resin composition layer. Therefore, in order to ensure the performance of the underfill material, foreign matter inspection using a defect inspection machine or the like is often performed after the underfill material is produced. On the other hand, the foreign matter inspection is preferably carried out directly in the state of the underfill material, that is, in the state of the laminate of the base film and the resin composition layer. In addition, the foreign matter inspection performed by the inspection machine usually requires a certain degree of transmittance for the underfill material. The light transmittance of the underfill material of this embodiment falls within the range of 20 to 90%, so the above foreign matter inspection can be performed.

本實施形態中之底部填充材的光線透射率,考慮對應於光量小的攝像機、更為提高上述異物檢查之精度的觀點,宜為40~90%,為50~90%更佳。The light transmittance of the underfill material in this embodiment is preferably 40 to 90%, more preferably 50 to 90%, from the viewpoint of being compatible with a camera with a small light intensity and further improving the accuracy of the foreign matter inspection.

本實施形態之底部填充材中,基材薄膜於波長600nm的光線透射率(以下有時簡稱為「基材薄膜的光線透射率」)並無特別限制,考慮更為提高上述異物檢查之精度的觀點,宜為20~90%,為40~90%更佳。 同樣非特別限制,樹脂組成物層(NCF)於波長600nm的光線透射率(以下有時簡稱「樹脂組成物層的光線透射率」),考慮對應於光量小的攝像機、更為提高上述異物檢查之精度的觀點,宜為20~90%,為40~90%更佳。 In the underfill material of this embodiment, the light transmittance of the base film at a wavelength of 600 nm (hereinafter sometimes referred to as the "light transmittance of the base film") is not particularly limited, but it is considered to further improve the accuracy of the foreign matter inspection. From the perspective of perspective, it should be 20~90%, and 40~90% is better. Also not particularly limited, the light transmittance of the resin composition layer (NCF) at a wavelength of 600 nm (hereinafter sometimes referred to as "the light transmittance of the resin composition layer") is considered to be compatible with a camera with a small amount of light, and further improves the above-mentioned foreign matter inspection. From the perspective of accuracy, it should be 20~90%, and 40~90% is better.

底部填充材、基材薄膜及樹脂組成物層的光線透射率,例如可利用後述實施例所記載之方法來測定。具體而言,可使用分光比色計,並採用於室溫(25℃)下測得的數值。又。各底部填充材、基材薄膜及NCF的光線透射率可採用例如製作各個寬度5cm×長度5cm之樣本,測定樣本之任意的點之平均值(例如5點平均值等)。 又,本實施形態之底部填充材係以各波長600nm中的光線透射率作為基準,故可廣泛地適用取得容易且通用性高的攝像機等各種校準標記辨認裝置。 The light transmittance of the underfill material, the base film, and the resin composition layer can be measured, for example, by the method described in the Examples described below. Specifically, a spectrophotometer can be used, and the value measured at room temperature (25°C) is adopted. again. The light transmittance of each underfill material, base film, and NCF can be determined by, for example, making a sample of 5 cm in width x 5 cm in length, and measuring the average value of any point on the sample (such as the average of 5 points, etc.). In addition, since the underfill material of this embodiment is based on the light transmittance at each wavelength of 600 nm, it can be widely used in various calibration mark recognition devices such as cameras that are easy to obtain and have high versatility.

(基材薄膜的光線透射率與底部填充材的光線透射率的差) 本實施形態之底部填充材中,於樹脂組成物層含有可見光吸收劑(B),且基材薄膜於波長600nm的光線透射率與底部填充材於波長600nm的光線透射率之差為2~80%。如此,具有基材薄膜於波長600nm的光線透射率與底部填充材於波長600nm的光線透射率之差時,基材薄膜與樹脂組成物層的光線透射率會產生差異,利用肉眼所為之辨識可輕易地識別薄膜之基材薄膜面與樹脂組成物層面,亦即可辨識性優良。藉此,基材薄膜面及樹脂組成物層面的辨認不需花費時間,可使底部填充材之操作性改善,且可輕易地配置於成為對象之晶圓等對象上。本實施形態中的基材薄膜的光線透射率與底部填充材的光線透射率之差,考慮可辨識性更優良的觀點,為5~80%再更佳,為10~80%特佳。 (The difference between the light transmittance of the base film and the light transmittance of the underfill material) In the underfill material of this embodiment, the resin composition layer contains a visible light absorber (B), and the difference between the light transmittance of the base film at a wavelength of 600 nm and the light transmittance of the underfill material at a wavelength of 600 nm is 2 to 80 %. In this way, when there is a difference between the light transmittance of the base film at a wavelength of 600 nm and the light transmittance of the underfill material at a wavelength of 600 nm, there will be a difference in the light transmittance of the base film and the resin composition layer, which can be identified with the naked eye. The base film surface and the resin composition layer of the film can be easily identified, which means the visibility is excellent. This eliminates the need for time-consuming identification of the base film surface and the resin composition layer, improves the operability of the underfill material, and can be easily placed on a target wafer or the like. In this embodiment, the difference between the light transmittance of the base film and the light transmittance of the underfill material is preferably 5 to 80%, and particularly preferably 10 to 80%, from the viewpoint of better visibility.

基材薄膜於波長600nm的光線透射率[T 1]與底部填充材於波長600nm的光線透射率[T 0]之差為|T 1-T 0|,並以它們的差之絕對值為基準進行判斷。 The difference between the light transmittance of the base film at a wavelength of 600nm [T 1 ] and the underfill material at a wavelength of 600nm [T 0 ] is |T 1 -T 0 |, and the absolute value of their difference is used as the basis. Make judgments.

另外,本實施形態中,底部填充材的疊層結構,只要底部填充材的光線透射率及該光線透射率與基材薄膜的光線透射率之差符合上述關係,則無特別限制,例如也可在基材薄膜與樹脂組成物層之間具有中間層。中間層可列舉例如:設置於基材薄膜之脫模層等。例如,基材薄膜為設有脫模層之薄膜時,在基材薄膜剝離後,脫模層會和基材薄膜一起剝離,故“具有脫模層之基材薄膜”整體的透射率可視為上述“基材薄膜的光線透射率”。In addition, in this embodiment, the laminated structure of the underfill material is not particularly limited as long as the light transmittance of the underfill material and the difference between the light transmittance and the light transmittance of the base film satisfy the above-mentioned relationship. For example, it may also be There is an intermediate layer between the base film and the resin composition layer. Examples of the intermediate layer include a release layer provided on a base film and the like. For example, when the base film is a film with a release layer, after the base film is peeled off, the release layer will be peeled off together with the base film, so the overall transmittance of the "base film with a release layer" can be regarded as The above-mentioned "light transmittance of the base film".

〈基材薄膜〉 基材薄膜並無特別限制例如可使用高分子薄膜。高分子薄膜的材質可列舉例如:聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯、及聚對苯二甲酸丁二酯等聚酯系樹脂;聚氯乙烯、聚偏二氯乙烯、聚乙烯、聚丙烯、聚丁烯、聚丁二烯、乙烯-丙烯共聚物、聚甲基戊烯、乙烯-乙酸乙烯酯共聚物、及乙烯-乙烯醇共聚物等乙烯基系樹脂;聚胺甲酸酯系樹脂;聚醯亞胺系樹脂;聚醯胺系樹脂等。基材薄膜可使用含有這些樹脂之薄膜、以及於這些薄膜的表面塗佈有脫模劑之脫模薄膜。它們之中,宜為含有選自聚酯系樹脂、聚醯亞胺系樹脂、及聚醯胺系樹脂中之1種以上之樹脂的薄膜、或於這些薄膜的表面塗佈有脫模劑之脫模薄膜,為含有係為聚酯系樹脂之一種的聚對苯二甲酸乙二酯之薄膜、或於含有聚對苯二甲酸乙二酯之薄膜的表面塗佈有脫模劑之脫模薄膜更佳。 〈Substrate film〉 The base film is not particularly limited, and a polymer film can be used. Examples of materials for the polymer film include: polyester resins such as polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate; polyvinyl chloride, polyvinylidene chloride; , polyethylene, polypropylene, polybutylene, polybutadiene, ethylene-propylene copolymer, polymethylpentene, ethylene-vinyl acetate copolymer, and ethylene-vinyl alcohol copolymer and other vinyl resins; poly Urethane resin; polyimide resin; polyamide resin, etc. As the base film, a film containing these resins and a release film in which a release agent is coated on the surface of these films can be used. Among them, films containing one or more resins selected from polyester resins, polyimide resins, and polyamide resins, or films whose surfaces are coated with a release agent are preferred. A release film is a film containing polyethylene terephthalate, which is a type of polyester resin, or a release film in which a release agent is coated on the surface of a film containing polyethylene terephthalate. Film is better.

基材薄膜的厚度無特別限制,就達成上述光線透射率之觀點,可適當地調整,惟考慮底部填充材之製造容易的觀點,例如將樹脂組成物塗佈於基材薄膜時的塗佈厚之良好的安定性、及底部填充材之良好的搬運性之觀點,宜為10~100μm。 又,基材薄膜的厚度的下限,考慮可充分確保製造底部填充材時的產量之觀點,為10μm以上更佳,為20μm以上再更佳,為25μm以上又更佳。基材薄膜的厚度的上限,考慮基材薄膜最終並不會以半導體裝置的構成構件之形式存在,而會在步驟的途中剝離之觀點、以及考慮底部填充材之製造成本的觀點,宜為100μm以下,為80μm以下再更佳,為50μm以下又更佳。 The thickness of the base film is not particularly limited. From the perspective of achieving the above-mentioned light transmittance, it can be adjusted appropriately. However, the thickness of the base film can be adjusted appropriately to facilitate the production of the underfill material, such as the coating thickness when applying the resin composition to the base film. From the viewpoint of good stability and good transportability of the underfill material, 10~100μm is suitable. In addition, the lower limit of the thickness of the base film is preferably 10 μm or more, more preferably 20 μm or more, and still more preferably 25 μm or more, from the viewpoint of ensuring sufficient throughput when manufacturing the underfill material. The upper limit of the thickness of the base film is preferably 100 μm, considering the fact that the base film does not ultimately exist as a component of the semiconductor device and will be peeled off during the process, and the manufacturing cost of the underfill material. or below, preferably 80 μm or below, further preferably 50 μm or below.

〈樹脂組成物層〉 樹脂組成物層含有熱硬化性樹脂(A)及可見光吸收劑(B)。樹脂組成物層也可因應需要含有選自由無機填充材(C)、助熔劑活性劑(D)、硬化觸媒(E)、硬化劑(F)、及其組合構成之群組中之1種以上。本實施形態中,樹脂組成物層可使用至少含有熱硬化性樹脂(A)及可見光吸收劑(B)之薄膜狀底部填充材用樹脂組成物來形成。另外,薄膜狀底部填充材用樹脂組成物亦同樣地也可因應需要含有選自由無機填充材(C)、助熔劑活性劑(D)、硬化觸媒(E)、硬化劑(F)、及其組合構成之群組中之1種以上。 <Resin composition layer> The resin composition layer contains a thermosetting resin (A) and a visible light absorber (B). The resin composition layer may also contain one selected from the group consisting of inorganic filler (C), flux activator (D), hardening catalyst (E), hardener (F), and combinations thereof as needed. above. In this embodiment, the resin composition layer can be formed using a resin composition for a film-like underfill material containing at least a thermosetting resin (A) and a visible light absorber (B). In addition, the resin composition for film-like underfill materials may also contain an inorganic filler (C), a flux activator (D), a curing catalyst (E), a hardener (F), and More than one type in the group composed of its combination.

本實施形態之底部填充材,考慮適合用於預塗型底部填充材之觀點,如上述般,樹脂組成物層宜為半硬化狀態(B階)。本實施形態中,半硬化狀態(B階)的最低熔融黏度通常可設為50,000Pa・s以下。又,最低熔融黏度的下限例如可設為10Pa・s以上。The underfill material of this embodiment is suitable for use as a precoated underfill material. As mentioned above, the resin composition layer is preferably in a semi-hardened state (B-stage). In this embodiment, the minimum melt viscosity in the semi-hardened state (B stage) can usually be set to 50,000 Pa・s or less. Moreover, the lower limit of the minimum melt viscosity can be set to 10 Pa・s or more, for example.

本實施形態中,樹脂組成物層的最低熔融黏度可利用如下方法來測定。 亦即,可使用層合機並疊層樹脂組成物層,獲得厚度約0.4~0.6mm之樹脂片,使用該樹脂片作為樣本,並利用流變儀(Thermo Fisher Scientific公司製HAAKEMARS60(商品名))來測定最低熔融黏度。該測定中,可將使用平板徑8mm之一次性平行平板,於40℃~300℃之範圍內,以昇溫速度10℃/分鐘、頻率10.0rad/秒、及應變0.1%之條件下,測定樹脂片的最低熔融黏度後之值,視為樹脂組成物層的最低熔融黏度。 In this embodiment, the minimum melt viscosity of the resin composition layer can be measured by the following method. That is, a laminator can be used to laminate the resin composition layers to obtain a resin sheet with a thickness of about 0.4 to 0.6 mm. This resin sheet can be used as a sample and a rheometer (HAAKEMARS60 (trade name) manufactured by Thermo Fisher Scientific) can be used. ) to determine the minimum melt viscosity. In this measurement, a disposable parallel plate with a plate diameter of 8 mm can be used to measure the resin in the range of 40°C to 300°C under the conditions of a heating rate of 10°C/minute, a frequency of 10.0rad/second, and a strain of 0.1%. The value after the lowest melt viscosity of the sheet is regarded as the lowest melt viscosity of the resin composition layer.

於基材薄膜上形成樹脂組成物層來製造本實施形態之底部填充材的方法並無特別限制。如此的製造方法可列舉例如:將含有熱硬化性樹脂(A)及可見光吸收劑(B)之樹脂組成物溶解或分散於有機溶劑後的清漆塗佈於基材薄膜的表面,並進行加熱及/或於減壓下進行乾燥,去除溶劑使樹脂組成物固化,並形成樹脂組成物層之方法。乾燥條件並無特別限制,有機溶劑相對於樹脂組成物層之含有比率,係以相對於樹脂組成物層之總質量(100質量份)通常成為10質量份以下,宜成為5質量份以下的方式進行乾燥。達成該乾燥之條件取決於清漆中的有機溶劑之種類及摻合量而不同。例如,相對於熱硬化性樹脂(A)之總量100質量份,含有10~200質量份之甲乙酮的清漆時,於1氣壓下以90~160℃之加熱條件乾燥2~15分鐘係為大致的標準。The method of forming the resin composition layer on the base film to produce the underfill material of this embodiment is not particularly limited. Examples of such a manufacturing method include: coating a varnish obtained by dissolving or dispersing a resin composition containing a thermosetting resin (A) and a visible light absorber (B) in an organic solvent on the surface of a base film, and heating and / Or a method of drying under reduced pressure, removing the solvent, solidifying the resin composition, and forming a resin composition layer. The drying conditions are not particularly limited. The content ratio of the organic solvent to the resin composition layer is usually 10 parts by mass or less, preferably 5 parts by mass or less, relative to the total mass of the resin composition layer (100 parts by mass). Allow to dry. The conditions for achieving this drying vary depending on the type and blending amount of the organic solvent in the varnish. For example, when a varnish containing 10 to 200 parts by mass of methyl ethyl ketone relative to 100 parts by mass of the total amount of thermosetting resin (A) is dried under 1 atmosphere under heating conditions of 90 to 160°C for 2 to 15 minutes, it is approximate standards.

本實施形態之底部填充材中的樹脂組成物層的厚度,係可發揮能達成上述底部填充材等的光線透射率之程度的透射率者,雖亦取決於後述可見光吸收劑(B)的含量而變動,惟考慮樹脂組成物層在乾燥時更良好地去除較低分子量的揮發成分之觀點、及更有效且確實發揮作為底部填充材之功能的觀點,宜為5~500μm之範圍,為5~100μm之範圍再更佳,為5~50μm之範圍特佳。The thickness of the resin composition layer in the underfill material of this embodiment is a transmittance that can achieve the light transmittance of the above-mentioned underfill material, etc., although it also depends on the content of the visible light absorber (B) described below. However, considering the viewpoint that the resin composition layer can more effectively remove volatile components of lower molecular weight during drying, and that the resin composition layer can more effectively and reliably perform its function as an underfill material, the range of 5 to 500 μm is preferably 5. The range of ~100μm is even better, and the range of 5~50μm is particularly good.

[熱硬化性樹脂(A)] 樹脂組成物層含有熱硬化性樹脂(A)。熱硬化性樹脂(A)若為可發揮能達成上述底部填充材等的光線透射率之程度的透射率,且為熱硬化性之樹脂的話,則可適當地採用公知者。熱硬化性樹脂(A)的種類並無特別限制,可列舉例如:馬來醯亞胺化合物、檸康醯亞胺化合物、環氧樹脂、氧雜環丁烷樹脂、酚醛樹脂、(甲基)丙烯酸酯樹脂、不飽和聚酯樹脂、二烯丙苯二甲酸酯樹脂等,其中,宜包含選自馬來醯亞胺化合物、檸康醯亞胺化合物、及它們的組合之群組中之至少1種。 熱硬化性樹脂(A)宜不和後述助熔劑活性劑(D)展現反應性。又,熱硬化性樹脂(A)可單獨使用1種或混合使用2種以上。 [Thermosetting resin (A)] The resin composition layer contains thermosetting resin (A). As long as the thermosetting resin (A) has a transmittance that can achieve the light transmittance of the underfill material and the like and is a thermosetting resin, a known one can be appropriately used. The type of thermosetting resin (A) is not particularly limited, and examples thereof include maleimide compounds, citraconidine compounds, epoxy resins, oxetane resins, phenolic resins, (methyl) Acrylate resins, unsaturated polyester resins, diallyl phthalate resins, etc., preferably include those selected from the group consisting of maleimide compounds, citraconitrile imine compounds, and combinations thereof At least 1 species. It is preferable that the thermosetting resin (A) does not exhibit reactivity with the flux activator (D) described below. Moreover, the thermosetting resin (A) can be used individually by 1 type or in mixture of 2 or more types.

熱硬化性樹脂(A)可合併使用較高分子量之化合物(A1)及較低分子量之化合物(A2)。例如使用較高分子量之化合物(A1)的話,會緩和半導體晶片安裝時或熱硬化時(後熟化時)的硬化收縮時所產生的應力。又,例如,使用較低分子量之化合物(A2)的話,在半導體晶片安裝時或後熟化時可使交聯密度改善。The thermosetting resin (A) can be used in combination with a higher molecular weight compound (A1) and a lower molecular weight compound (A2). For example, if a compound (A1) with a relatively high molecular weight is used, the stress generated during hardening shrinkage during semiconductor chip mounting or thermal curing (post-curing) can be relaxed. Furthermore, for example, if a compound (A2) with a lower molecular weight is used, the crosslinking density can be improved during semiconductor wafer mounting or post-curing.

此外,熱硬化性樹脂(A)可組合使用選自重量平均分子量為3,000以上且9,500以下之馬來醯亞胺化合物(AA-1)、重量平均分子量為3,000以上且9,500以下之檸康醯亞胺化合物(AB-1)、及它們的組合之群組中之至少1種以上;以及選自重量平均分子量為300以上且未達3,000之馬來醯亞胺化合物(AA-2)、及重量平均分子量為300以上且未達3,000之檸康醯亞胺化合物(AB-2)及或它們的組合之群組中之至少1種以上。 化合物(A1),考慮可獲得更進一步優良的低空隙性及晶片黏接性之觀點,宜包含馬來醯亞胺化合物(AA-1)。又,化合物(A2),考慮可獲得更進一步優良的低空隙性及晶片黏接性之觀點,宜包含馬來醯亞胺化合物(AA-2)。 In addition, the thermosetting resin (A) may be used in combination with a maleimide compound (AA-1) having a weight average molecular weight of 3,000 or more and 9,500 or less, and a maleimide compound (AA-1) having a weight average molecular weight of 3,000 or more and 9,500 or less. Amine compound (AB-1), and at least one or more of the group of combinations thereof; and a maleimide compound (AA-2) with a weight average molecular weight of 300 or more and less than 3,000, and a maleimide compound (AA-2) selected by weight At least one of the group of citraconitrile imine compounds (AB-2) with an average molecular weight of 300 or more and less than 3,000 and/or their combinations. The compound (A1) preferably contains the maleimide compound (AA-1) from the viewpoint of obtaining further excellent low void properties and chip adhesion. In addition, the compound (A2) preferably contains the maleimide compound (AA-2) from the viewpoint of obtaining further excellent low void properties and wafer adhesion properties.

馬來醯亞胺化合物(AA-1),考慮可獲得又更進一步優良的低空隙性及晶片黏接性之觀點,其重量平均分子量宜為3,200以上且8,000以下,為3,300以上且6,000以下更佳。 檸康醯亞胺化合物(AB-1),考慮可獲得又更進一步優良的低空隙性及晶片黏接性之觀點,其重量平均分子量宜為3,200以上且8,000以下,為3,300以上且6,000以下更佳。 馬來醯亞胺化合物(AA-2),考慮可獲得又更進一步優良的低空隙性及晶片黏接性之觀點,其重量平均分子量宜為350以上且2,800以下,為400以上且2,500以下更佳。 檸康醯亞胺化合物(AB-2),考慮可獲得又更進一步優良的低空隙性及晶片黏接性之觀點,其重量平均分子量宜為350以上且2,800以下,為400以上且2,500以下更佳。 The weight average molecular weight of the maleimide compound (AA-1) is preferably 3,200 or more and 8,000 or less, and 3,300 or more and 6,000 or less, in order to obtain further excellent low voids and wafer adhesion. good. From the viewpoint of achieving further excellent low voids and wafer adhesion, the weight average molecular weight of the nicotinamide compound (AB-1) is preferably 3,200 or more and 8,000 or less, and 3,300 or more and 6,000 or less. good. The maleimide compound (AA-2) has a weight average molecular weight of 350 or more and 2,800 or less, and preferably 400 or more and 2,500 or less, in order to obtain further excellent low voids and wafer adhesion. good. From the viewpoint of achieving further excellent low voids and wafer adhesion, the weight average molecular weight of the citraconidine compound (AB-2) is preferably 350 or more and 2,800 or less, and 400 or more and 2,500 or less. good.

(馬來醯亞胺化合物) 馬來醯亞胺化合物比起環氧樹脂等,在保存時、或加熱處理所致之和助熔劑活性劑的反應不易顯著地進行,不易發生助熔劑活性劑之失活。 馬來醯亞胺化合物若為分子中具有1個以上之馬來醯亞胺基之樹脂或化合物,則無特別限制。馬來醯亞胺化合物可使用1種或混合使用2種以上。 如此的馬來醯亞胺化合物可列舉例如:N-苯基馬來醯亞胺、N-羥苯基馬來醯亞胺、雙(4-馬來醯亞胺基苯基)甲烷、4,4-二苯基甲烷雙馬來醯亞胺、雙(3,5-二甲基-4-馬來醯亞胺基苯基)甲烷、雙(3-乙基-5-甲基-4-馬來醯亞胺基苯基)甲烷、雙(3,5-二乙基-4-馬來醯亞胺基苯基)甲烷、苯基甲烷馬來醯亞胺、鄰苯雙馬來醯亞胺、間苯雙馬來醯亞胺、對苯雙馬來醯亞胺、2,2-雙(4-(4-馬來醯亞胺基苯氧基)-苯基)丙烷、3,3-二甲基-5,5-二乙基-4,4-二苯基甲烷雙馬來醯亞胺、4-甲基-1,3-伸苯基雙馬來醯亞胺、1,6-雙馬來醯亞胺-(2,2,4-三甲基)己烷、4,4-二苯基醚雙馬來醯亞胺、4,4-二苯基碸雙馬來醯亞胺、1,3-雙(3-馬來醯亞胺基苯氧基)苯、1,3-雙(4-馬來醯亞胺基苯氧基)苯、聚苯基甲烷馬來醯亞胺、酚醛清漆樹脂型馬來醯亞胺化合物、聯苯芳烷基型馬來醯亞胺化合物、2,2-雙(4-(4-馬來醯亞胺基苯氧基)苯基)丙烷、1,2-雙(馬來醯亞胺基)乙烷、1,4-雙(馬來醯亞胺基)丁烷、1,6-雙(馬來醯亞胺基)己烷、N,N’-1,3-伸苯基二馬來醯亞胺、N,N’-1,4-伸苯基二馬來醯亞胺、N-苯基馬來醯亞胺、下式(3)表示之馬來醯亞胺化合物、含有下式(4)表示之構成單元以及在分子鏈之兩末端含有馬來醯亞胺基之雙馬來醯亞胺化合物、下式(5)表示之馬來醯亞胺化合物、下式(6)表示之馬來醯亞胺化合物、及下式(7)表示之馬來醯亞胺化合物等。熱硬化性樹脂(A)也能以將馬來醯亞胺化合物聚合而得的預聚物、及將馬來醯亞胺化合物和胺化合物等其它化合物聚合而得的預聚物等之形態含於本實施形態之樹脂組成物中。 (maleimide compound) Compared with epoxy resins and the like, maleimide compounds are less likely to react significantly with the flux activator during storage or due to heat treatment, and the flux activator is less likely to be deactivated. The maleimide compound is not particularly limited as long as it is a resin or compound having one or more maleimide groups in the molecule. One type of maleimide compound may be used, or two or more types may be mixed and used. Examples of such maleimide compounds include: N-phenylmaleimide, N-hydroxyphenylmaleimide, bis(4-maleimidophenyl)methane, 4, 4-diphenylmethane bismaleimide, bis(3,5-dimethyl-4-maleimidophenyl)methane, bis(3-ethyl-5-methyl-4- Maleimidophenyl)methane, bis(3,5-diethyl-4-maleimidophenyl)methane, phenylmethane maleimide, o-phenyl bismaleimide Amine, m-phenylene bismaleimide, p-phenylene bismaleimide, 2,2-bis(4-(4-maleiminophenoxy)-phenyl)propane, 3,3 -Dimethyl-5,5-diethyl-4,4-diphenylmethane bismaleimide, 4-methyl-1,3-phenylenebismaleimide, 1,6 -Bismaleimide-(2,2,4-trimethyl)hexane, 4,4-diphenyl ether bismaleimide, 4,4-diphenylsine bismaleimide Amine, 1,3-bis(3-maleiminophenoxy)benzene, 1,3-bis(4-maleiminophenoxy)benzene, polyphenylmethanemaleamide Amine, novolak resin type maleimide compound, biphenyl aralkyl type maleimide compound, 2,2-bis(4-(4-maleiminophenoxy)phenyl) Propane, 1,2-bis(maleimino)ethane, 1,4-bis(maleimino)butane, 1,6-bis(maleimino)hexane, N,N'-1,3-phenylene dimaleimide, N,N'-1,4-phenylene dimaleimide, N-phenylmaleimide, the following formula (3) A maleimide compound represented by the following formula (4), a bismaleimine compound containing a maleimide group at both ends of the molecular chain and a structural unit represented by the following formula (4), the following formula (5) A maleimine compound represented by the following formula (6), a maleimine compound represented by the following formula (7), etc. The thermosetting resin (A) may be contained in the form of a prepolymer obtained by polymerizing a maleimide compound, a prepolymer obtained by polymerizing other compounds such as a maleimide compound and an amine compound, etc. In the resin composition of this embodiment.

馬來醯亞胺化合物並無特別限制,考慮對於有機溶劑可獲得更優良的溶解性之觀點,宜包含選自2,2’-雙{4-(4-馬來醯亞胺基苯氧基)苯基}丙烷、1,2-雙(馬來醯亞胺基)乙烷、1,4-雙(馬來醯亞胺基)丁烷、1,6-雙(馬來醯亞胺基)己烷、N,N’-1,3-伸苯基二馬來醯亞胺、N,N’-1,4-伸苯基二馬來醯亞胺、N-苯基馬來醯亞胺、下式(3)表示之馬來醯亞胺化合物、含有下式(4)表示之構成單元以及在兩末端含有馬來醯亞胺基之雙馬來醯亞胺化合物、下式(5)表示之馬來醯亞胺化合物、下式(6)表示之馬來醯亞胺化合物、下式(7)表示之馬來醯亞胺化合物、及它們的組合之群組中之至少1種,包含選自2,2’-雙{4-(4-馬來醯亞胺基苯氧基)苯基}丙烷、下式(3)表示之馬來醯亞胺化合物、含有下式(4)表示之構成單元以及在兩末端含有馬來醯亞胺基之雙馬來醯亞胺化合物、下式(5)表示之馬來醯亞胺化合物、下式(6)表示之馬來醯亞胺化合物、下式(7)表示之馬來醯亞胺化合物、及它們的組合之群組中之至少1種更佳。The maleimide compound is not particularly limited. From the viewpoint of obtaining better solubility in organic solvents, it is preferable to include a maleimide compound selected from the group consisting of 2,2'-bis{4-(4-maleiminophenoxy). )phenyl}propane, 1,2-bis(maleimino)ethane, 1,4-bis(maleimino)butane, 1,6-bis(maleimino) )Hexane, N,N'-1,3-phenylenedismaleimide, N,N'-1,4-phenylenedismaleimide, N-phenylmaleimide Amine, a maleimide compound represented by the following formula (3), a bismaleimine compound containing a structural unit represented by the following formula (4) and a maleimide group at both ends, the following formula (5 ), at least one of the group consisting of a maleimine compound represented by the following formula (6), a maleimine compound represented by the following formula (7), and a combination thereof , containing a maleimide compound selected from 2,2'-bis{4-(4-maleimidophenoxy)phenyl}propane and represented by the following formula (3), containing the following formula (4 ) and a bismaleimine compound containing a maleimide group at both ends, a maleimine compound represented by the following formula (5), and a maleimide compound represented by the following formula (6) At least one kind from the group consisting of an amine compound, a maleimide compound represented by the following formula (7), and a combination thereof is more preferred.

[化6] [Chemical 6]

式(3)中,n3表示1~30之整數。In formula (3), n3 represents an integer from 1 to 30.

[化7] [Chemical 7]

式(4)中,R 11表示碳數1~16之直鏈狀或分支狀之伸烷基、或碳數2~16之直鏈狀或分支狀之伸烯基。R 12表示碳數1~16之直鏈狀或分支狀之伸烷基、或碳數2~16之直鏈狀或分支狀之伸烯基。R 13各自獨立地表示氫原子、碳數1~16之直鏈狀或分支狀之烷基、或碳數2~16之直鏈狀或分支狀之烯基。n 5表示1~10之整數。 另外,式(4)表示之構成單元的詳細說明如後所述。 In formula (4), R 11 represents a linear or branched alkylene group having 1 to 16 carbon atoms, or a linear or branched alkenylene group having 2 to 16 carbon atoms. R 12 represents a linear or branched alkylene group having 1 to 16 carbon atoms, or a linear or branched alkenylene group having 2 to 16 carbon atoms. R 13 each independently represents a hydrogen atom, a linear or branched alkyl group having 1 to 16 carbon atoms, or a linear or branched alkenyl group having 2 to 16 carbon atoms. n 5 represents an integer from 1 to 10. In addition, the detailed description of the structural unit represented by Formula (4) will be mentioned later.

[化8] [Chemical 8]

式(5)中,R 8各自獨立地表示氫原子、甲基、或乙基。R 9各自獨立地表示氫原子或甲基。 In formula (5), R 8 each independently represents a hydrogen atom, a methyl group, or an ethyl group. R 9 each independently represents a hydrogen atom or a methyl group.

[化9] [Chemical 9]

式(6)中,R 10各自獨立地表示氫原子、碳數1~5之烷基、或苯基。n4表示1~10之整數。R 10宜為氫原子。 In formula (6), R 10 each independently represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a phenyl group. n4 represents an integer from 1 to 10. R 10 is preferably a hydrogen atom.

[化10] [Chemical 10]

式(7)中,R 10各自獨立地表示氫原子或甲基,n2表示1以上之整數,宜表示1~10之整數。 In the formula (7), R 10 each independently represents a hydrogen atom or a methyl group, and n 2 represents an integer of 1 or more, preferably an integer of 1 to 10.

然後,針對含有式(4)表示之構成單元以及在分子鏈之兩末端含有馬來醯亞胺基之雙馬來醯亞胺化合物的結構進行說明。Next, the structure of a bismaleimide compound containing a structural unit represented by formula (4) and maleimide groups at both ends of the molecular chain will be described.

雙馬來醯亞胺化合物也可具有多個式(4)表示之構成單元,此時,多個式(4)表示之構成單元中之R 11、R 12、及R 13可分別相同也可相異。又,雙馬來醯亞胺化合物也可為式(4)表示之構成單元中之R 11、R 12、及R 13、以及雙馬來醯亞胺化合物中的式(4)之構成單元的數值中之至少1個係為不同的化合物之混合物。 The bismaleimide compound may have a plurality of structural units represented by formula (4). In this case, R 11 , R 12 , and R 13 in the plurality of structural units represented by formula (4) may be the same or each of them may be the same. Different. In addition, the bismaleimide compound may be R 11 , R 12 , and R 13 in the structural unit represented by the formula (4), and the bismaleimine compound may be a structural unit represented by the formula (4). At least one of the numerical values is a mixture of different compounds.

雙馬來醯亞胺化合物之式(4)表示之構成單元中,R 11表示碳數1~16之直鏈狀或分支狀之伸烷基、或碳數2~16之直鏈狀或分支狀之伸烯基。R 11考慮在晶片安裝時樹脂組成物具有理想的黏度,且可理想地控制安裝時之熔融黏度之上昇的觀點,宜為直鏈狀或分支狀之伸烷基,為直鏈狀之伸烷基更佳。 In the structural unit represented by formula (4) of the bismaleimide compound, R 11 represents a linear or branched alkylene group having 1 to 16 carbon atoms, or a linear or branched alkylene group having 2 to 16 carbon atoms. Like alkenyl. R 11 Considering that the resin composition has an ideal viscosity during chip mounting and can ideally control the increase in melt viscosity during mounting, it is appropriate to use a straight-chain or branched alkylene group and a straight-chain alkylene group. The foundation is better.

伸烷基的碳數,考慮在晶片安裝時樹脂組成物具有更理想的黏度,且可更理想地控制在安裝時之熔融黏度之上昇的觀點,宜為2~14,為4~12更佳。 直鏈狀或分支狀之伸烷基可列舉例如:亞甲基、伸乙基、伸丙基、2,2-二甲基伸丙基、伸丁基、伸戊基、伸己基、伸庚基、伸辛基、伸壬基、伸癸基、伸十一烷基、伸十二烷基、伸十三烷基、伸十四烷基、伸十五烷基、伸十六烷基、伸新戊基、二甲基伸丁基、甲基伸己基、乙基伸己基、二甲基伸己基、三甲基伸己基、甲基伸庚基、二甲基伸庚基、三甲基伸庚基、四甲基伸庚基、乙基伸庚基、甲基伸辛基、甲基伸壬基、甲基伸癸基、甲基伸十一烷基、甲基伸十二烷基、甲基伸十三烷基、甲基伸十四烷基、及甲基伸十五烷基。 The carbon number of the alkylene group is preferably 2 to 14, and more preferably 4 to 12, from the viewpoint that the resin composition has a more ideal viscosity during chip mounting and can more ideally control the increase in melt viscosity during mounting. . Examples of linear or branched alkylene groups include methylene, ethylene, propylene, 2,2-dimethylpropylene, butyl, pentyl, hexylene, and heptyl. Base, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl, Neopentyl, dimethylbutylene, methylhexylene, ethylhexylene, dimethylhexylene, trimethylhexylene, methylheptyl, dimethylheptyl, trimethylhexylene Heptyl, tetramethylheptyl, ethylheptyl, methyloctyl, methylnonyl, methyldecyl, methylundecyl, methyldodecyl, methyl Tridecyl, methyltetradecyl, and methylpentadecyl.

伸烯基的碳數,考慮在晶片安裝時樹脂組成物具有更理想的黏度,且可更理想地控制在安裝時之熔融黏度之上昇的觀點,宜為2~14,為4~12更佳。 直鏈狀或分支狀之伸烯基可列舉例如:伸乙烯基、1-甲基伸乙烯基、伸烯丙基、伸丙烯基、伸異丙烯基、伸1-丁烯基、伸2-丁烯基、伸1-戊烯基、伸2-戊烯基、伸異戊烯基、伸環戊烯基、伸環己烯基、及伸二環戊二烯基等。 The carbon number of the alkylene group is preferably 2 to 14, and 4 to 12 is more preferred from the viewpoint that the resin composition has a more ideal viscosity during chip mounting and can more ideally control the increase in melt viscosity during mounting. . Examples of linear or branched alkenylene groups include: vinylene group, 1-methyl vinylene group, allylethylene group, propenylene group, isopropenyl group, 1-butenyl group, and 2-ethylene group. Butenyl, 1-pentenyl, 2-pentenyl, isopentenyl, cyclopentenyl, cyclohexenyl, and dicyclopentadienyl, etc.

式(4)表示之構成單元中,R 12表示碳數1~16之直鏈狀或分支狀之伸烷基、或碳數2~16之直鏈狀或分支狀之伸烯基。R 12考慮在晶片安裝時樹脂組成物具有理想的黏度,且可理想地控制安裝時之熔融黏度之上昇的觀點,宜為直鏈狀或分支狀之伸烷基,為直鏈狀之伸烷基更佳。 In the structural unit represented by formula (4), R 12 represents a linear or branched alkylene group having 1 to 16 carbon atoms, or a linear or branched alkenylene group having 2 to 16 carbon atoms. R 12 takes into consideration the fact that the resin composition has an ideal viscosity during chip mounting and can ideally control the increase in melt viscosity during mounting. It is preferable to use a straight-chain or branched alkylene group and a straight-chain alkylene group. The foundation is better.

伸烷基的碳數,考慮在晶片安裝時樹脂組成物具有更理想的黏度,且可更理想地控制在安裝時之熔融黏度之上昇的觀點,宜為2~14,為4~12更佳。 直鏈狀或分支狀之伸烷基可參照前述R 11The carbon number of the alkylene group is preferably 2 to 14, and more preferably 4 to 12, from the viewpoint that the resin composition has a more ideal viscosity during chip mounting and can more ideally control the increase in melt viscosity during mounting. . For the linear or branched alkylene group, refer to the aforementioned R 11 .

伸烯基的碳數,考慮在晶片安裝時樹脂組成物具有更理想的黏度,且可更理想地控制在安裝時之熔融黏度之上昇的觀點,宜為2~14,為4~12更佳。 直鏈狀或分支狀之伸烯基可參照前述R 11The carbon number of the alkylene group is preferably 2 to 14, and 4 to 12 is more preferred from the viewpoint that the resin composition has a more ideal viscosity during chip mounting and can more ideally control the increase in melt viscosity during mounting. . For the linear or branched alkenylene group, refer to the aforementioned R 11 .

式(4)表示之構成單元中,R 11及R 12可相同也可相異,考慮可更輕易合成雙馬來醯亞胺化合物之觀點,宜為相同。 In the structural unit represented by formula (4), R 11 and R 12 may be the same or different, but are preferably the same from the viewpoint that the bismaleimide compound can be synthesized more easily.

式(4)表示之構成單元中,R 13各自獨立地表示氫原子、碳數1~16之直鏈狀或分支狀之烷基、或碳數2~16之直鏈狀或分支狀之烯基。R 13考慮在晶片安裝時樹脂組成物具有理想的黏度,且可理想地控制安裝時之熔融黏度之上昇的觀點,宜各自獨立地為氫原子、或碳數1~16之直鏈狀或分支狀之烷基,R 13之中,1~5個基(R 13)為碳數1~16之直鏈狀或分支狀之烷基,且剩餘的基(R 13)為氫原子更佳,R 13之中,1~3的基(R 13)為碳數1~16之直鏈狀或分支狀之烷基,且剩餘的基(R 13)為氫原子再更佳。 In the structural unit represented by formula (4), R 13 each independently represents a hydrogen atom, a linear or branched alkyl group having 1 to 16 carbon atoms, or a linear or branched olefin having 2 to 16 carbon atoms. base. R 13 Considering that the resin composition has an ideal viscosity during chip mounting and can ideally control the increase in melt viscosity during mounting, it is appropriate to independently form a hydrogen atom or a linear or branched chain with carbon numbers from 1 to 16. -like alkyl group, among R 13 , 1 to 5 groups (R 13 ) are linear or branched alkyl groups with 1 to 16 carbon atoms, and the remaining groups (R 13 ) are preferably hydrogen atoms, Among R 13 , groups 1 to 3 (R 13 ) are linear or branched alkyl groups having 1 to 16 carbon atoms, and the remaining groups (R 13 ) are preferably hydrogen atoms.

烷基的碳數,考慮在晶片安裝時樹脂組成物具有更理想的黏度,且可更理想地控制在安裝時之熔融黏度之上昇的觀點,宜為2~14,為4~12更佳。 直鏈狀或分支狀之烷基可列舉例如:甲基、乙基、正丙基、異丙基、1-乙基丙基、正丁基、2-丁基、異丁基、三級丁基、正戊基、2-戊基、三級戊基、2-甲基丁基、3-甲基丁基、2,2-二甲基丙基、正己基、2-己基、3-己基、正庚基、正辛基、2-甲基戊基、3-甲基戊基、4-甲基戊基、2-甲基戊烷-3-基、及正壬基。 The carbon number of the alkyl group is preferably 2 to 14, and more preferably 4 to 12, from the viewpoint that the resin composition has a more ideal viscosity during chip mounting and can more ideally control the increase in melt viscosity during mounting. Examples of linear or branched alkyl groups include: methyl, ethyl, n-propyl, isopropyl, 1-ethylpropyl, n-butyl, 2-butyl, isobutyl, tertiary butyl base, n-pentyl, 2-pentyl, tertiary pentyl, 2-methylbutyl, 3-methylbutyl, 2,2-dimethylpropyl, n-hexyl, 2-hexyl, 3-hexyl , n-heptyl, n-octyl, 2-methylpentyl, 3-methylpentyl, 4-methylpentyl, 2-methylpentan-3-yl, and n-nonyl.

烯基的碳數,考慮在晶片安裝時樹脂組成物具有更理想的黏度,且可更理想地控制在安裝時之熔融黏度之上昇的觀點,宜為2~14,為4~12更佳。 直鏈狀或分支狀之烯基可列舉例如:乙烯基、烯丙基、4-戊烯基、異丙烯基、異戊烯基、2-庚烯基、2-辛烯基、及2-壬烯基。 The carbon number of the alkenyl group is preferably 2 to 14, and more preferably 4 to 12, from the viewpoint that the resin composition has a more ideal viscosity during chip mounting and can more ideally control the increase in melt viscosity during mounting. Examples of linear or branched alkenyl groups include vinyl, allyl, 4-pentenyl, isopropenyl, isopentenyl, 2-heptenyl, 2-octenyl, and 2- Nonenyl.

式(4)表示之構成單元中,n 5表示1~10之整數。 In the structural unit represented by formula (4), n 5 represents an integer from 1 to 10.

雙馬來醯亞胺化合物在分子鏈之兩末端具有馬來醯亞胺基。兩末端意指在雙馬來醯亞胺化合物之分子鏈兩側之末端,例如式(4)表示之構成單元位在雙馬來醯亞胺化合物之分子鏈的末端時,意指在R 11之分子鏈的末端具有馬來醯亞胺基、或在馬來醯亞胺環之N原子的分子鏈之末端具有馬來醯亞胺基、或在兩側之末端具有馬來醯亞胺基。雙馬來醯亞胺化合物也可在分子鏈之兩末端以外具有馬來醯亞胺基。 馬來醯亞胺基係以下式(8)表示,N原子鍵結於雙馬來醯亞胺化合物之分子鏈。又,鍵結於雙馬來醯亞胺化合物之馬來醯亞胺基可全部相同也可相異,惟分子鏈之兩末端的馬來醯亞胺基宜為相同。 The bismaleimide compound has maleimide groups at both ends of the molecular chain. Both ends mean the ends on both sides of the molecular chain of the bismaleimine compound. For example, when the structural unit represented by formula (4) is located at the end of the molecular chain of the bismaleimine compound, it means R 11 The terminal of the molecular chain has a maleimine group, or the terminal of the molecular chain of the N atom of the maleimine ring has a maleimine group, or the terminals of both sides have maleimine groups. . The bismaleimide compound may have a maleimide group other than both ends of the molecular chain. The maleimide group is represented by the following formula (8), and the N atom is bonded to the molecular chain of the bismaleimine compound. In addition, the maleimine groups bonded to the bismaleimine compound may all be the same or different, but the maleimine groups at both ends of the molecular chain are preferably the same.

[化11] [Chemical 11]

式(8)中,R 11各自獨立地表示氫原子、或碳數1~4之直鏈狀或分支狀之烷基。R 11考慮更理想地和樹脂(A)反應之觀點,宜為兩者皆為氫原子。 烷基的碳數考慮更理想地和樹脂(A)反應之觀點,宜為1~3,為1~2更佳。 直鏈狀或分支狀之烷基可參照前述R 13In formula (8), R 11 each independently represents a hydrogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms. From the viewpoint of more ideal reaction with the resin (A), R 11 is preferably both hydrogen atoms. The number of carbon atoms in the alkyl group is preferably 1 to 3, more preferably 1 to 2, from the viewpoint of more ideal reaction with the resin (A). For linear or branched alkyl groups, refer to the aforementioned R 13 .

如此的雙馬來醯亞胺化合物可列舉例如下式(9)表示之馬來醯亞胺化合物。它們可單獨使用1種或也可將式(9)中之a的重複數不同的2種以上之化合物適當地混合使用。Examples of such bismaleimide compounds include maleimide compounds represented by the following formula (9). One of these compounds may be used alone, or two or more compounds having different repeating numbers of a in formula (9) may be appropriately mixed and used.

[化12] [Chemical 12]

式(9)中,a表示1~10之整數。a考慮在晶片安裝時樹脂組成物具有更理想的黏度,且可更理想地控制在安裝時之熔融黏度之上昇的觀點,宜為1~6之整數。式(9)表示之馬來醯亞胺化合物也可為a不同的化合物之混合物。In formula (9), a represents an integer from 1 to 10. a Considering that the resin composition has a more ideal viscosity during chip mounting and can more ideally control the increase in melt viscosity during mounting, an integer between 1 and 6 is appropriate. The maleimide compound represented by formula (9) may also be a mixture of different compounds.

馬來醯亞胺化合物(AA-1),考慮可獲得更進一步優良的低空隙性及晶片黏接性之觀點,宜為前述式(3)表示之馬來醯亞胺化合物、及前述含有式(4)表示之構成單元以及在分子鏈之兩末端含有馬來醯亞胺基之雙馬來醯亞胺化合物。The maleimide compound (AA-1) is preferably a maleimide compound represented by the aforementioned formula (3), and a maleimide compound represented by the aforementioned formula (3), from the viewpoint of obtaining further excellent low void properties and wafer adhesion properties. (4) The structural units shown and bismaleimide compounds containing maleimide groups at both ends of the molecular chain.

馬來醯亞胺化合物(AA-2),考慮可獲得更進一步優良的低空隙性及晶片黏接性之觀點,宜為前述式(5)表示之馬來醯亞胺化合物、及前述式(6)表示之馬來醯亞胺化合物。The maleimide compound (AA-2) is preferably a maleimide compound represented by the aforementioned formula (5), and the aforementioned formula ( 6) represents the maleimide compound.

馬來醯亞胺化合物也可使用市售品,2,2’-雙(4-(4-馬來醯亞胺基苯氧基)苯基)丙烷可列舉例如:K・I化成(股)公司製BMI-80(商品名)。式(3)表示之馬來醯亞胺化合物可列舉例如:K・I化成(股)製BMI-1000P(商品名,式(3)中之n3=14(平均值),重量平均分子量:3,700)、K・I化成(股)公司製BMI-650P(商品名,式(3)中之n3=9(平均值))、K・I化成(股)公司製BMI-250P(商品名,式(3)中之n3=3~8(平均值))、K・I化成(股)公司製CUA-4(商品名,式(3)中之n3=1)等。含有式(4)表示之構成單元以及在分子鏈之兩末端含有馬來醯亞胺基之雙馬來醯亞胺化合物可列舉例如:日本化藥(股)製MIZ-001(商品名,含有式(9)表示之馬來醯亞胺化合物,重量平均分子量:3,900)。式(5)表示之馬來醯亞胺化合物可列舉例如:K・I化成(股)製BMI-70(商品名;雙-(3-乙基-5-甲基-4-馬來醯亞胺基苯基)甲烷,分子量:550)。式(6)表示之馬來醯亞胺化合物可列舉例如:日本化藥(股)公司製MIR-3000-70MT(商品名,式(6)中之R 10全部為氫原子,且為n4係1~10之混合物,重量平均分子量:1,050)。式(7)表示之馬來醯亞胺化合物可列舉例如:大和化成工業(股)公司製BMI-2300(商品名)。 Commercially available maleimide compounds can also be used. Examples of 2,2'-bis(4-(4-maleiminophenoxy)phenyl)propane include: K・I Chemical Co., Ltd. BMI-80 (trade name) made by the company. Examples of the maleimide compound represented by the formula (3) include: BMI-1000P (trade name) manufactured by K・I Chemical Co., Ltd., n3=14 (average value) in the formula (3), weight average molecular weight: 3,700 ), BMI-650P manufactured by K・I Chemical Co., Ltd. (trade name, n3=9 (average value) in formula (3)), BMI-250P manufactured by K・I Chemical Co., Ltd. (trade name, formula n3=3~8 (average value) in (3)), CUA-4 manufactured by K・I Chemical Co., Ltd. (trade name, n3=1 in formula (3)), etc. Examples of bismaleimide compounds containing a structural unit represented by formula (4) and maleimide groups at both ends of the molecular chain include: MIZ-001 (trade name, containing Maleimide compound represented by formula (9), weight average molecular weight: 3,900). Examples of the maleimide compound represented by formula (5) include: BMI-70 (trade name; bis-(3-ethyl-5-methyl-4-maleimide) manufactured by KI Chemical Co., Ltd. Aminophenyl)methane, molecular weight: 550). Examples of the maleimide compound represented by the formula (6) include: MIR-3000-70MT (trade name) manufactured by Nippon Kayaku Co., Ltd., R10 in the formula (6) are all hydrogen atoms, and are n4-based Mixture of 1 to 10, weight average molecular weight: 1,050). Examples of the maleimide compound represented by the formula (7) include BMI-2300 (trade name) manufactured by Daiwa Chemical Industry Co., Ltd.

(檸康醯亞胺化合物) 檸康醯亞胺化合物並無特別限制,可列舉例如:鄰苯雙檸康醯亞胺、間苯雙檸康醯亞胺、對苯雙檸康醯亞胺、4,4-二苯基甲烷雙檸康醯亞胺、2,2-雙[4-(4-檸康醯亞胺基苯氧基)苯基]丙烷、雙(3,5-二甲基-4-檸康醯亞胺基苯基)甲烷、雙(3-乙基-5-甲基-4-檸康醯亞胺基苯基)甲烷、雙(3,5-二乙基-4-檸康醯亞胺基苯基)甲烷、1,3-伸二甲苯基雙(檸康醯亞胺)、N-[3-雙(三甲基矽基)胺基-1-丙基]檸康醯亞胺、N-[3-雙(三乙基矽基)胺基-1-丙基]檸康醯亞胺、N-[3-雙(三苯基矽基)胺基-1-丙基]檸康醯亞胺、N,N’-(間苯二亞甲基)二檸康醯亞胺、及N-[3-(亞甲基琥珀醯亞胺甲基)苄基檸康醯亞胺、下式(10)表示之檸康醯亞胺化合物、含有前述式(4)表示之構成單元以及在分子鏈之兩末端含有檸康醯亞胺基之雙檸康醯亞胺化合物、下式(11)表示之檸康醯亞胺化合物、及下式(12)表示之檸康醯亞胺化合物。另外,雙檸康醯亞胺化合物可參照前述雙馬來醯亞胺化合物。針對式(4)之結構的詳細說明如前所述,關於檸康醯亞胺基,係於前述式(8)中,R 11中至少1個基為甲基,除此之外,可參照式(8)之結構。檸康醯亞胺化合物可使用1種或混合使用2種以上。 (citraconimine compound) The citraconimine compound is not particularly limited, and examples thereof include: phthaloconimide, resorcinolimide, p-phenylinodimenide, 4,4-diphenylmethane biscitraconimide, 2,2-bis[4-(4-citraconimidephenoxy)phenyl]propane, bis(3,5-dimethyl -4-citraconyl iminophenyl)methane, bis(3-ethyl-5-methyl-4-citraconyl iminophenyl)methane, bis(3,5-diethyl-4 -citraconidinylphenyl)methane, 1,3-xylylenebis(citraconidinyl)methane, N-[3-bis(trimethylsilyl)amino-1-propyl]citron Considimine, N-[3-bis(triethylsilyl)amino-1-propyl]citraconidimine, N-[3-bis(triphenylsilyl)amino-1- Propyl]citraconimide, N,N'-(isoxylyldimide)dinitraconidimine, and N-[3-(methylenesuccinimidemethyl)benzylcitraconimide Citraconidimine compound, a citraconidimine compound represented by the following formula (10), a biscitraconidimine compound containing a structural unit represented by the aforementioned formula (4), and a citraconidimine compound having citraconidimine groups at both ends of the molecular chain , a citracenyl imine compound represented by the following formula (11), and a citracenyl imine compound represented by the following formula (12). In addition, the bismaleimide compound may refer to the aforementioned bismaleimide compound. Detailed description of the structure of formula (4) is as mentioned above. Regarding the citraconitrile imine group, it is in the aforementioned formula (8). At least one group in R 11 is a methyl group. Otherwise, please refer to The structure of formula (8). One type of citraconidine compound may be used, or two or more types may be mixed and used.

檸康醯亞胺化合物在上述之中,考慮對於有機溶劑可獲得更優良的溶解性,且可獲得進一步優良的低空隙性及晶片黏接性之觀點,宜含有下式(10)表示之檸康醯亞胺化合物、含有前述式(4)表示之構成單元以及在分子鏈之兩末端含有檸康醯亞胺基之雙檸康醯亞胺化合物、下式(11)表示之檸康醯亞胺化合物、及下式(12)表示之檸康醯亞胺化合物。Among the above-mentioned citraconidine compounds, it is preferable to contain citraconidine compounds represented by the following formula (10) from the viewpoint of obtaining better solubility in organic solvents and obtaining further excellent low void properties and wafer adhesion properties. A citraconimine compound, a biscitraconidimine compound containing a structural unit represented by the aforementioned formula (4) and a citraconidimine group at both ends of the molecular chain, and a citraconidimine compound represented by the following formula (11) An amine compound, and a citraconitrile imine compound represented by the following formula (12).

檸康醯亞胺化合物(AB-1),考慮可獲得更進一步優良的低空隙性及晶片黏接性之觀點,宜為下式(10)表示之檸康醯亞胺化合物、及含有前述式(4)表示之構成單元以及在分子鏈之兩末端含有檸康醯亞胺基之雙檸康醯亞胺化合物。The citracaniline compound (AB-1) is preferably a citracaniline compound represented by the following formula (10) from the viewpoint of obtaining further excellent low voids and wafer adhesion properties, and a compound containing the aforementioned formula (4) The structural units shown and biscitraconide imine compounds containing citraconide imine groups at both ends of the molecular chain.

[化13] [Chemical 13]

式(10)中,n 6表示1~30之整數。 In formula (10), n 6 represents an integer from 1 to 30.

檸康醯亞胺化合物(AB-2),考慮可獲得更進一步優良的低空隙性及晶片黏接性之觀點,宜為下式(11)表示之檸康醯亞胺化合物、及下式(12)表示之檸康醯亞胺化合物。The citracaniline compound (AB-2) is preferably a citracaniline compound represented by the following formula (11), and the following formula ( 12) represents the citraconitrile imine compound.

[化14] [Chemical 14]

式(11)中,R 8各自獨立地表示氫原子、甲基、或乙基。R 9各自獨立地表示氫原子或甲基。 [化15] In formula (11), R 8 each independently represents a hydrogen atom, a methyl group, or an ethyl group. R 9 each independently represents a hydrogen atom or a methyl group. [Chemical 15]

式(12)中,R 10各自獨立地表示氫原子、或甲基,n4表示1以上之整數,宜表示1~10之整數。R 10宜為氫原子。 In the formula (12), R 10 each independently represents a hydrogen atom or a methyl group, and n4 represents an integer of 1 or more, preferably an integer of 1 to 10. R 10 is preferably a hydrogen atom.

樹脂組成物層中的熱硬化性樹脂(A)的含量(總量)並無特別限制,考慮底部填充材之硬化性、製造性及樹脂組成物層之強度的觀點,相對於樹脂成分之合計100質量份,宜為25質量份以上,為40質量份以上更佳,為50質量份以上再更佳。熱硬化性樹脂(A)的含量(總量)的上限並無特別限制,相對於樹脂成分之合計100質量份,宜為100質量份以下,為95質量份以下更佳,為90質量份以下再更佳。另外,在此所謂「樹脂成分」係指包含熱硬化性樹脂(A)、以及使用作為硬化劑(F)、助熔劑活性劑(D)之樹脂時則包含這些樹脂,且不含可見光吸收劑(B)、硬化觸媒(E)等之概念。The content (total amount) of the thermosetting resin (A) in the resin composition layer is not particularly limited. Considering the hardenability and manufacturability of the underfill material and the strength of the resin composition layer, the content (total amount) of the thermosetting resin (A) is determined based on the total amount of the resin components. 100 parts by mass is preferably at least 25 parts by mass, more preferably at least 40 parts by mass, and even more preferably at least 50 parts by mass. The upper limit of the content (total amount) of the thermosetting resin (A) is not particularly limited, but it is preferably 100 parts by mass or less, more preferably 95 parts by mass or less, and 90 parts by mass or less based on 100 parts by mass in total of the resin components. Even better. In addition, the "resin component" here refers to a thermosetting resin (A), a resin used as a hardener (F), and a flux activator (D) when these resins are used, and does not contain a visible light absorber. (B), the concept of hardening catalyst (E), etc.

熱硬化性樹脂(A)含有化合物(A1)及化合物(A2)時,考慮可獲得更進一步優良的低空隙性及晶片黏接性之觀點,化合物(A1)的含量相對於化合物(A1)與化合物(A2)之合計100質量份,宜為40~90質量份,為42~85質量份更佳,為45~80質量份再更佳。又,化合物(A2)的含量相對於化合物(A1)與化合物(A2)之合計100質量份,宜為10~60質量份,為15~58質量份更佳,為20~55質量份再更佳。When the thermosetting resin (A) contains the compound (A1) and the compound (A2), from the viewpoint of obtaining further excellent low void properties and die adhesion, the content of the compound (A1) is smaller than that of the compound (A1) and the compound (A2). The total 100 parts by mass of the compound (A2) is preferably 40 to 90 parts by mass, more preferably 42 to 85 parts by mass, and still more preferably 45 to 80 parts by mass. Moreover, the content of compound (A2) is preferably 10 to 60 parts by mass, more preferably 15 to 58 parts by mass, and more preferably 20 to 55 parts by mass based on 100 parts by mass of the total of compound (A1) and compound (A2). good.

熱硬化性樹脂(A)含有馬來醯亞胺化合物(AA-1)及馬來醯亞胺化合物(AA-2)時,考慮可獲得更進一步優良的低空隙性及晶片黏接性之觀點,馬來醯亞胺化合物(AA-1)的含量相對於化合物(AA-1)與化合物(AA-2)之合計100質量份,宜為40~90質量份,為42~85質量份更佳,為45~80質量份再更佳。又,馬來醯亞胺化合物(AA-2)的含量相對於化合物(AA-1)與化合物(AA-2)之合計100質量份,宜為10~60質量份,為15~58質量份更佳,為20~55質量份再更佳。When the thermosetting resin (A) contains a maleimide compound (AA-1) and a maleimide compound (AA-2), it is considered that further excellent low voids and die adhesion can be obtained. , the content of the maleimide compound (AA-1) is preferably 40 to 90 parts by mass, preferably 42 to 85 parts by mass relative to 100 parts by mass of the total of the compound (AA-1) and the compound (AA-2). Best, 45 to 80 parts by mass is even better. Moreover, the content of the maleimide compound (AA-2) is preferably 10 to 60 parts by mass, or 15 to 58 parts by mass relative to 100 parts by mass of the total of the compound (AA-1) and the compound (AA-2). Even better, 20 to 55 parts by mass is still better.

熱硬化性樹脂(A)含有檸康醯亞胺化合物(AB-1)及檸康醯亞胺化合物(AB-2)時,考慮可獲得更進一步優良的低空隙性及晶片黏接性之觀點,檸康醯亞胺化合物(AB-1)的含量相對於化合物(AB-1)與化合物(AB-2)之合計100質量份,宜為40~90質量份,為42~85質量份更佳,為45~80質量份更佳。又,檸康醯亞胺化合物(AB-2)的含量相對於化合物(AB-1)與化合物(AB-2)之合計100質量份,宜為10~60質量份,為15~58質量份更佳,為20~55質量份再更佳。When the thermosetting resin (A) contains a citracaniline compound (AB-1) and a citracaniline compound (AB-2), it is considered that further excellent low voids and chip adhesion can be obtained. , the content of the nicotinamide compound (AB-1) is preferably 40 to 90 parts by mass, preferably 42 to 85 parts by mass relative to the total of 100 parts by mass of the compound (AB-1) and the compound (AB-2). The best is 45 to 80 parts by mass. Moreover, the content of the citraconidine compound (AB-2) is preferably 10 to 60 parts by mass, or 15 to 58 parts by mass relative to 100 parts by mass of the total of the compound (AB-1) and the compound (AB-2). Even better, 20 to 55 parts by mass is still better.

[可見光吸收劑(B)] 樹脂組成物層含有可見光吸收劑(B)。本實施形態之底部填充材藉由樹脂組成物層所含的可見光吸收劑(B)之種類的選擇、及調整可見光吸收劑(B)含量與樹脂組成物層之膜厚,可將底部填充材及樹脂組成物層的光線透射率控制在期望的範圍內。例如為了調整樹脂組成物層的光線透射率,也可考慮使用平均粒徑超過400nm之二氧化矽等粒徑較大的無機微粒,惟粒徑較大的無機微粒在保存時容易沉降,清漆保存安定性等會降低。因此,尤其在使用平均粒徑為400nm以下之無機填充材(C)的情況,使用可見光吸收劑(B)來調整樹脂組成物層的光線透射率的話,就清漆保存安定性等之觀點較有利。 [Visible light absorber (B)] The resin composition layer contains a visible light absorber (B). The underfill material of this embodiment can be made into an underfill material by selecting the type of visible light absorber (B) contained in the resin composition layer and adjusting the content of the visible light absorber (B) and the film thickness of the resin composition layer. And the light transmittance of the resin composition layer is controlled within the desired range. For example, in order to adjust the light transmittance of the resin composition layer, it is also possible to consider using larger inorganic particles such as silica with an average particle diameter exceeding 400 nm. However, inorganic particles with larger particle sizes tend to settle during storage, and the varnish is stored Stability will be reduced. Therefore, especially when using an inorganic filler (C) with an average particle diameter of 400 nm or less, it is advantageous from the viewpoint of the storage stability of the varnish, etc., to use a visible light absorber (B) to adjust the light transmittance of the resin composition layer. .

可見光吸收劑(B)若為可吸收可見光之材料,則無特別限制,考慮光線吸收效率、及抑制和熱硬化性樹脂(A)等其它成分之反應的觀點,例如可使用選自有機染料、有機顏料、及它們的組合之群組中之至少1種。The visible light absorber (B) is not particularly limited as long as it is a material that can absorb visible light. From the viewpoint of light absorption efficiency and suppression of reaction with other components such as the thermosetting resin (A), for example, a material selected from the group consisting of organic dyes, At least one of the group consisting of organic pigments and combinations thereof.

有機染料及有機顏料並無特別限制,可使用例如選自由醌系、胺基酮系、陽離子系、花青系、酞菁系、喹吖酮系、二芳基/三芳基甲烷系、俘精酸酐(fulgide)、偶氮系、方酸菁(squarylium)系、氧雜菁(oxonol)系、亞苄基系、硝基系、亞硝基系、噻唑系、靛(indigoid)系、及它們的組合之群組中之至少1種之化合物,考慮抑制和熱硬化性樹脂(A)等其它成分之反應的觀點,宜為選自醌系、胺基酮系、及它們的組合之群組中之至少1種之化合物。The organic dyes and organic pigments are not particularly limited and can be used, for example, selected from the group consisting of quinone series, aminoketone series, cationic series, cyanine series, phthalocyanine series, quinacridone series, diaryl/triarylmethane series, and phthalocyanine series. Acid anhydride (fulgide), azo series, squarylium series, oxonol series, benzylidene series, nitro series, nitroso series, thiazole series, indigoid series, and the like At least one compound from the group of combinations is preferably selected from the group consisting of quinones, aminoketones, and combinations thereof from the viewpoint of inhibiting the reaction with other components such as the thermosetting resin (A). At least one of the compounds.

(有機染料) 有機染料之具體例並非特別限定,惟可例示例如:下列偶氮色素、媒染染料、反應染料、酸性染料。本實施形態中的有機染料考慮吸收波長區域廣的觀點,宜為下述中之黑色系的染料。 Kayaset Black A-N Direct Brilliant Pink B(C.I.Direct Red9) Kayarus Light Red F5G(C.I.Direct Red225) Direct Light Rose FR(C.I.Direct Red227) Sumilight Supra Turquoise Blue G(C.I.Direct Blue86) Direct Supra Blue FFRL(C.I.Direct Blue108) Kayarus Cupro Green G(C.I.Direct Green59) Direct Fast Black B(C.I.Direct Black22) Sunchromine Yellow MR(C.I.Mordant Yellow3) Chrome Yellow AS(C.I.Mordant Yellow5) Chrome Yellow 3R(C.I.Mordant Yellow8) Chrome Yellow PG(C.I.Mordant Yellow23) Chrome Orange FL(C.I.Mordant Orange29) Chrome Red B conc.(C.I.Mordant Red7) Chrome Red 5G(C.I.Mordant Red19) Sunchromine Brilliant Violet R conc.(C.I.Mordant Violet1:1) Chrome Fine Violet R(C.I.Mordant Violet1) Chrome Cyanine BXS(C.I.Mordant Blue1) Mordant Blue B 120%(C.I.Mordant Blue13) Chrome Cyanine BLA(C.I.Mordant Blue29) Mordant Green L(C.I.Mordant Green17) Chrome Green 3B-N(C.I.Mordant Green28) Mordant Brown KS(C.I.Mordant Brown15) Chrome Brown LE(C.I.Mordant Brown19) Chrome Brown RH(C.I.Mordant Brown33) Chrome Black P2B(C.I.Mordant Black7) Chrome Black PLW(C.I.Mordant Black9) Chrome Black ET-1(C.I.Mordant Black11) (organic dyes) Specific examples of organic dyes are not particularly limited, and examples include the following azo dyes, mordant dyes, reactive dyes, and acid dyes. The organic dye in this embodiment is preferably a black dye among the following from the viewpoint of a wide absorption wavelength range. Kayaset Black A-N Direct Brilliant Pink B(C.I.Direct Red9) Kayarus Light Red F5G(C.I.Direct Red225) Direct Light Rose FR(C.I.Direct Red227) Sumilight Supra Turquoise Blue G(C.I.Direct Blue86) Direct Supra Blue FFRL(C.I.Direct Blue108) Kayarus Cupro Green G(C.I.Direct Green59) Direct Fast Black B(C.I.Direct Black22) Sunchromine Yellow MR(C.I.Mordant Yellow3) Chrome Yellow AS(C.I.Mordant Yellow5) Chrome Yellow 3R(C.I.Mordant Yellow8) Chrome Yellow PG(C.I.Mordant Yellow23) Chrome Orange FL(C.I.Mordant Orange29) Chrome Red B conc.(C.I.Mordant Red7) Chrome Red 5G(C.I.Mordant Red19) Sunchromine Brilliant Violet R conc.(C.I.Mordant Violet1:1) Chrome Fine Violet R(C.I.Mordant Violet1) Chrome Cyanine BXS(C.I.Mordant Blue1) Mordant Blue B 120%(C.I.Mordant Blue13) Chrome Cyanine BLA(C.I.Mordant Blue29) Mordant Green L(C.I.Mordant Green17) Chrome Green 3B-N(C.I.Mordant Green28) Mordant Brown KS(C.I.Mordant Brown15) Chrome Brown LE(C.I.Mordant Brown19) Chrome Brown RH(C.I.Mordant Brown33) Chrome Black P2B(C.I.Mordant Black7) Chrome Black PLW(C.I.Mordant Black9) Chrome Black ET-1(C.I.Mordant Black11)

Chrome Navy CR 158%(C.I.Mordant Black17) Chrome Light Grey G(C.I.Mordant Black38) Chrome Bordeaux FB Alizarine Chrome Brilliant Blue BL Chrome Blue 2G Sumifix Yellow GR 150%(C.I Reactive Yellow15) Lanasol Yellow 4G(C.I Reactive Yellow39) Sumifix Golden Yellow GG(A) 150%(C.I Reactive Yellow76) Kayacion Yellow E-S4R(C.I Reactive Yellow84) Novacron Yellow P-6GS gran(C.I Reactive Yellow95) Kayacion Yellow E-SNA(C.I Reactive Yellow102) Kayacion Yellow E-SN4G(C.I Reactive Yellow105) Drimarene Yellow K-2R CDG(C.I Reactive Yellow125) Sumifix Supra Yellow 3RF 150% gran(C.I Reactive Yellow145) Sumifix Supra Brilliant Yellow 3GF 150% gr(C.I Reactive Yellow167) Novacron Yellow C-R(C.I Reactive Yellow168) Novcron Yellow C-5G(C.I Reactive Yellow175) Kayacion Yellow CF-3RJ 150 Kayacion Yellow E-CM Procion Orange PX-RN(C.I.Reactive Orange5) Remazol Brilliant Orange 3R Special(C.I.Reactive Orange16) Levafix Yellow E-3RL gran(C.I.Reactive Orange30) Levafix Orange E-3GA gran(C.I.Reactive Orange64) Remazol Golden Yellow RNL gran 150%(C.I.Reactive Orange107) Drimaren Rubinol X3LR CDG(C.I.Reactive Red55) Brilliant Red G SPL(C.I.Reactive Red112) Brilliant Red 7BF Liq 25%(C.I.Reactive Red114) Lanasol Red 2G(C.I.Reactive Red116) Levafix Scarlet E-2GA gran(C.I.Reactive Red124) Levafix Brilliant Red E-4BA gran(C.I.Reactive Red158) Chrome Navy CR 158%(C.I.Mordant Black17) Chrome Light Gray G(C.I.Mordant Black38) Chrome Bordeaux FB Alizarine Chrome Brilliant Blue BL Chrome Blue 2G Sumifix Yellow GR 150%(C.I Reactive Yellow15) Lanasol Yellow 4G(C.I Reactive Yellow39) Sumifix Golden Yellow GG(A) 150%(C.I Reactive Yellow76) Kayacion Yellow E-S4R(C.I Reactive Yellow84) Novacron Yellow P-6GS gran(C.I Reactive Yellow95) Kayacion Yellow E-SNA(C.I Reactive Yellow102) Kayacion Yellow E-SN4G(C.I Reactive Yellow105) Drimarene Yellow K-2R CDG(C.I Reactive Yellow125) Sumifix Supra Yellow 3RF 150% gran(C.I Reactive Yellow145) Sumifix Supra Brilliant Yellow 3GF 150% gr(C.I Reactive Yellow167) Novacron Yellow C-R(C.I Reactive Yellow168) Novcron Yellow C-5G(C.I Reactive Yellow175) Kayacion Yellow CF-3RJ 150 Kayacion Yellow E-CM Procion Orange PX-RN(C.I.Reactive Orange5) Remazol Brilliant Orange 3R Special(C.I.Reactive Orange16) Levafix Yellow E-3RL gran(C.I.Reactive Orange30) Levafix Orange E-3GA gran(C.I.Reactive Orange64) Remazol Golden Yellow RNL gran 150%(C.I.Reactive Orange107) Drimaren Rubinol X3LR CDG(C.I.Reactive Red55) Brilliant Red G SPL(C.I.Reactive Red112) Brilliant Red 7BF Liq 25%(C.I.Reactive Red114) Lanasol Red 2G(C.I.Reactive Red116) Levafix Scarlet E-2GA gran(C.I.Reactive Red124) Levafix Brilliant Red E-4BA gran(C.I.Reactive Red158)

Levafix Brilliant Red E-6BA gran(C.I.Reactive Red159) Remazol Brilliant Red F3B gran(C.I.Reactive Red180) Supra Brilliant Red 3BF 150% gran(C.I.Reactive Red195) Remazol Red RB 133%(C.I.Reactive Red198) Supra Scarlet 2GF 150G(C.I.Reactive Red222) Novacron Red P-6B Gran. 150% Novacron Red C-2G Kayacion Violet A-3R(C.I.Reactive Violet1) Remazol Brill. Violet 5R(C.I.Reactive Violet5) Drimaren Violet K-2RL CDG(C.I.Reactive Violet33) Remazol Brill. Blue RN(C.I.Reactive Blue19) Sumifix Turquoise Blue G(N) conc.(C.I.Reactive Blue21) Novacron Blue P-3R IN(C.I.Reactive Blue49) Lanasol Blue 3R(C.I.Reactive Blue50) Drimarene Blue X-3LR CDG(C.I.Reactive Blue52) Lanasol Blue 3G(C.I.Reactive Blue69) Novacron Turquoise P-GR 150%(C.I.Reactive Blue72) Drimarene Navy X-RBL CDG(C.I.Reactive Blue79) Lanasol Blue 8G-01 150%(C.I.Reactive Blue185) Drimarene Blue K-2RL CDG(C.I.Reactive Blue209) Sumifix Supra Blue BRF 150% gran.(C.I.Reactive Blue221) Sumifix Supra Navy Blue BF gran.(C.I.Reactive Blue222) Sumifix Supra Turquoise Blue BGF(N)(C.I.Reactive Blue231) Novacron Blue C-R(C.I.Reactive Blue235) Kayacion Blue CF-GJ 150 Kayacion Blue CF-BL Kayacin Marine E-CM Kayacion Navy E-CM Sumifix Supra Navy Blue 3GF 150% granLevafix Brown E-2R gran(C.I.Reactive Brown19) Novacron Brown P-6R Gran. 150 Remazol Black B-N 150%(C.I.Reactive Black5) Levafix Brilliant Red E-6BA gran(C.I.Reactive Red159) Remazol Brilliant Red F3B gran(C.I.Reactive Red180) Supra Brilliant Red 3BF 150% gran(C.I.Reactive Red195) Remazol Red RB 133%(C.I.Reactive Red198) Supra Scarlet 2GF 150G(C.I.Reactive Red222) Novacron Red P-6B Gran. 150% Novacron Red C-2G Kayacion Violet A-3R(C.I.Reactive Violet1) Remazol Brill. Violet 5R(C.I.Reactive Violet5) Drimaren Violet K-2RL CDG(C.I.Reactive Violet33) Remazol Brill. Blue RN(C.I.Reactive Blue19) Sumifix Turquoise Blue G(N) conc.(C.I.Reactive Blue21) Novacron Blue P-3R IN(C.I.Reactive Blue49) Lanasol Blue 3R(C.I.Reactive Blue50) Drimarene Blue X-3LR CDG(C.I.Reactive Blue52) Lanasol Blue 3G(C.I.Reactive Blue69) Novacron Turquoise P-GR 150%(C.I.Reactive Blue72) Drimarene Navy X-RBL CDG(C.I.Reactive Blue79) Lanasol Blue 8G-01 150%(C.I.Reactive Blue185) Drimarene Blue K-2RL CDG(C.I.Reactive Blue209) Sumifix Supra Blue BRF 150% gran.(C.I.Reactive Blue221) Sumifix Supra Navy Blue BF gran.(C.I.Reactive Blue222) Sumifix Supra Turquoise Blue BGF(N)(C.I.Reactive Blue231) Novacron Blue C-R(C.I.Reactive Blue235) Kayacion Blue CF-GJ 150 Kayacion Blue CF-BL Kayacin Marine E-CM Kayacion Navy E-CM Sumifix Supra Navy Blue 3GF 150% granLevafix Brown E-2R gran(C.I.Reactive Brown19) Novacron Brown P-6R Gran. 150 Remazol Black B-N 150%(C.I.Reactive Black5)

Remazol Black RL 133%(C.I.Reactive Black31) Remazol Deep Black N 150%(C.I.Reactive Black31) Acid Quinoline Yellow WS H/C(C.I.Acid Yellow3) Kayacyl Yellow GG 80(C.I.Acid Yellow17) Tartrazine NS conc(C.I.Acid Yellow23) Suminol Fast Yellow R conc.(C.I.Acid Yellow25) Kayanol Milling Yellow O(C.I.Acid Yellow38) Suminol Milling Yellow MR(C.I.Acid Yellow42) Aminyl Yellow E-3GL(C.I.Acid Yellow49) Suminol Fast Yellow G (B)(C.I.Acid Yellow61) Erionyl Yellow B-4G(C.I.Acid Yellow79) Kayanol Yellow N5G(C.I.Acid Yellow110) Lanyl Yellow G ex cc(C.I.Acid Yellow116) Kayakalan Yellow GL 143(C.I.Acid Yellow121) Kayanol Milling Yellow 5GW(C.I.Acid Yellow127) Lanacron Yellow N-2GL KWL(C.I.Acid Yellow129) Erionyl Golden Yellow M-R-02(C.I.Acid Yellow151) Tectilon Yellow 2G 200%(C.I.Acid Yellow169) Lanacron Yellow S-2G-01 KWL(C.I.Acid Yellow220) Telon Yellow RLN micro(C.I.Acid Yellow230) Tectilon Yellow 3R 200%(C.I.Acid Yellow246) Chuganol Fast Yellow 5GL(C.I.Acid Yellow40:1) Solar Orange(C.I.Acid Orange7) Solar Light Orange GX(C.I.Acid Orange10) Chuganol Milling Brown 5R(C.I.Acid Orange51) Chuganol Milling OrangeSG(C.I.Acid Orange56) Kayanol Yellow N3R(C.I.Acid Orange67) Aminyl Yellow E-3RL(C.I.Acid Orange67) Lanyl Orange R 200%(C.I.Acid Orange88) Chuganol Milling Orange GSN 150%(C.I.Acid Orange95) Suminol Milling Orange GN(N)(C.I.Acid Orange95) Isolan Orange K-RLS(C.I.Acid Orange107) Telon Orange AGT 01(C.I.Acid Orange116) Lanyl Orange 2R e/c(C.I.Acid Orange120) Supralan Orange S-RL(C.I.Acid Orange166) Lanasyn Yellow M-2RL 180(C.I.Acid Orange180) Nylosan Orange NRL 250(C.I.Acid Orange250) Remazol Black RL 133%(C.I.Reactive Black31) Remazol Deep Black N 150%(C.I.Reactive Black31) Acid Quinoline Yellow WS H/C(C.I.Acid Yellow3) Kayacyl Yellow GG 80(C.I.Acid Yellow17) Tartrazine NS conc(C.I.Acid Yellow23) Suminol Fast Yellow R conc.(C.I.Acid Yellow25) Kayanol Milling Yellow O(C.I.Acid Yellow38) Suminol Milling Yellow MR(C.I.Acid Yellow42) Aminyl Yellow E-3GL(C.I.Acid Yellow49) Suminol Fast Yellow G (B)(C.I.Acid Yellow61) Erionyl Yellow B-4G(C.I.Acid Yellow79) Kayanol Yellow N5G(C.I.Acid Yellow110) Lanyl Yellow G ex cc(C.I.Acid Yellow116) Kayakalan Yellow GL 143(C.I.Acid Yellow121) Kayanol Milling Yellow 5GW(C.I.Acid Yellow127) Lanacron Yellow N-2GL KWL(C.I.Acid Yellow129) Erionyl Golden Yellow M-R-02(C.I.Acid Yellow151) Tectilon Yellow 2G 200%(C.I.Acid Yellow169) Lanacron Yellow S-2G-01 KWL(C.I.Acid Yellow220) Telon Yellow RLN micro(C.I.Acid Yellow230) Tectilon Yellow 3R 200%(C.I.Acid Yellow246) Chuganol Fast Yellow 5GL(C.I.Acid Yellow40:1) Solar Orange(C.I.Acid Orange7) Solar Light Orange GX(C.I.Acid Orange10) Chuganol Milling Brown 5R(C.I.Acid Orange51) Chuganol Milling OrangeSG(C.I.Acid Orange56) Kayanol Yellow N3R(C.I.Acid Orange67) Aminyl Yellow E-3RL(C.I.Acid Orange67) Lanyl Orange R 200%(C.I.Acid Orange88) Chuganol Milling Orange GSN 150%(C.I.Acid Orange95) Suminol Milling Orange GN(N)(C.I.Acid Orange95) Isolan Orange K-RLS(C.I.Acid Orange107) Telon Orange AGT 01(C.I.Acid Orange116) Lanyl Orange 2R e/c(C.I.Acid Orange120) Supralan Orange S-RL(C.I.Acid Orange166) Lanasyn Yellow M-2RL 180(C.I.Acid Orange180) Nylosan Orange NRL 250(C.I.Acid Orange250)

Lanasyn Orange M-RL p Silk Scarlet(C.I.Acid Red9) Brilliant Scarlet 3R conc.(C.I.Acid Red18) Acid Rhodamine G Conc(C.I.Acid Red50) Acid Rhodamine B Conc(C.I.Acid Red52) Chugacid Red FCH(C.I.Acid Red73) Chugacid Rubinol 3B 200%(C.I.Acid Red80) Rocceline NS conc. 120%(C.I.Acid Red88) Chuganol Anthracene Red G(C.I.Acid Red97) Suminol Fast Red G (B)(C.I.Acid Red118) Suminol Milling Brilliant Red 3BN (N) conc.(C.I.Acid Red131) Lanyl Red GG(C.I.Acid Red211) Lanyl Red B(C.I.Acid Red215) Lanasyn Bordeaux M-RLA200(C.I.Acid Red217) Suminol Milling Brilliant Red B conc. N(C.I.Acid Red249) Aminyl Red E-3BL(C.I.Acid Red257) Telon Red M-BL(C.I.Acid Red260) Chugai Aminol Fast Pink R(C.I.Acid Red289) Nylosan Red N-2RBL SGR(C.I.Acid Red336) Telon Red FRL micro(C.I.Acid Red337) Lanasyn Red M-G(C.I.Acid Red399) Kayakalan Red BL Nylosan Red EBL SGR 180 Kayanol Milling Red BW Kayanol Milling Violet FBW(C.I.Acid Violet48) Erionyl Red B-10B-01(C.I.Acid Violet54) Chugai Aminol Fast Violet F6R(C.I.Acid Violet102) Acid Pure Blue VX(C.I.Acid Blue1) Acid Brilliant Blue AF-N(C.I.Acid Blue7) Chugacid Light Blue A(C.I.Acid Blue25) Kayanol Blue N2G(C.I.Acid Blue40) Nylosan Blue E-GL p 250(C.I.Acid Blue72) Chuganol Blue 6B 333%(C.I.Acid Blue83) Chuganol Blue G 333%(C.I.Acid Blue90) Kayanol Navy Blue R(C.I.Acid Blue92) Lanasyn Orange M-RL p Silk Scarlet(C.I.Acid Red9) Brilliant Scarlet 3R conc.(C.I.Acid Red18) Acid Rhodamine G Conc(C.I.Acid Red50) Acid Rhodamine B Conc(C.I.Acid Red52) Chugacid Red FCH(C.I.Acid Red73) Chugacid Rubinol 3B 200%(C.I.Acid Red80) Rocceline NS conc. 120%(C.I.Acid Red88) Chuganol Anthracene Red G(C.I.Acid Red97) Suminol Fast Red G (B)(C.I.Acid Red118) Suminol Milling Brilliant Red 3BN (N) conc.(C.I.Acid Red131) Lanyl Red GG(C.I.Acid Red211) Lanyl Red B(C.I.Acid Red215) Lanasyn Bordeaux M-RLA200(C.I.Acid Red217) Suminol Milling Brilliant Red B conc. N(C.I.Acid Red249) Aminyl Red E-3BL(C.I.Acid Red257) Telon Red M-BL(C.I.Acid Red260) Chugai Aminol Fast Pink R(C.I.Acid Red289) Nylosan Red N-2RBL SGR(C.I.Acid Red336) Telon Red FRL micro(C.I.Acid Red337) Lanasyn Red M-G(C.I.Acid Red399) Kayakalan Red BL Nylosan Red EBL SGR 180 Kayanol Milling Red BW Kayanol Milling Violet FBW(C.I.Acid Violet48) Erionyl Red B-10B-01(C.I.Acid Violet54) Chugai Aminol Fast Violet F6R(C.I.Acid Violet102) Acid Pure Blue VX(C.I.Acid Blue1) Acid Brilliant Blue AF-N(C.I.Acid Blue7) Chugacid Light Blue A(C.I.Acid Blue25) Kayanol Blue N2G(C.I.Acid Blue40) Nylosan Blue E-GL p 250(C.I.Acid Blue72) Chuganol Blue 6B 333%(C.I.Acid Blue83) Chuganol Blue G 333%(C.I.Acid Blue90) Kayanol Navy Blue R(C.I.Acid Blue92)

Suminol Milling Brilliant Sky Blue SE (N)(C.I.Acid Blue112) Suminol Milling Cyanine 5R (N)(C.I.Acid Blue113) Kayanol Milling Blue GW(C.I.Acid Blue127) Lanyl Brilliant Blue G ex cc(C.I.Acid Blue127:1) Kayanol Blue NR(C.I.Acid Blue129) Kayanol Milling Blue BW(C.I.Acid Blue138) Kayanol Milling Blue 2RW(C.I.Acid Blue140) Lanyl Blue 3G ex conc(C.I.Acid Blue171) Nylosan Blue N-GL 150(C.I.Acid Blue230) Tectilon Blue 6G 200%(C.I.Acid Blue258) Telon Blue AFN(C.I.Acid Blue264) Tectilon Blue 4R-01 200%(C.I.Acid Blue277:1) Nylosan B Blue N-FL SGR180(C.I.Acid Blue278) Nylosan Blue N-5GL SGR 200(C.I.Acid Blue280) Kayalax Navy R(C.I.Acid Blue300) Nylosan Blue N-BLN(C.I.Acid Blue350) Lanacron Blue N-3GL Acid Green V(C.I.Acid Green16) Chuganol Cyanine Green G(C.I.Acid Green25) Suminol Milling Brilliant Sky Blue SE (N)(C.I.Acid Blue112) Suminol Milling Cyanine 5R (N)(C.I.Acid Blue113) Kayanol Milling Blue GW(C.I.Acid Blue127) Lanyl Brilliant Blue G ex cc(C.I.Acid Blue127:1) Kayanol Blue NR(C.I.Acid Blue129) Kayanol Milling Blue BW(C.I.Acid Blue138) Kayanol Milling Blue 2RW(C.I.Acid Blue140) Lanyl Blue 3G ex conc(C.I.Acid Blue171) Nylosan Blue N-GL 150(C.I.Acid Blue230) Tectilon Blue 6G 200%(C.I.Acid Blue258) Telon Blue AFN(C.I.Acid Blue264) Tectilon Blue 4R-01 200%(C.I.Acid Blue277:1) Nylosan B Blue N-FL SGR180(C.I.Acid Blue278) Nylosan Blue N-5GL SGR 200(C.I.Acid Blue280) Kayalax Navy R(C.I.Acid Blue300) Nylosan Blue N-BLN(C.I.Acid Blue350) Lanacron Blue N-3GL Acid Green V(C.I.Acid Green16) Chuganol Cyanine Green G(C.I.Acid Green25)

樹脂組成物層中之可見光吸收劑(B)的含量係為了調整上述透射率因應其種類等而適當地調整,故其含量並無限定,惟例如考慮絕緣可靠性、膜耐久性等之觀點,相對於熱硬化性樹脂(A)之總量100質量份,宜為0.01~10質量份,為0.05~5質量份更佳,為0.05~2質量份再更佳。The content of the visible light absorber (B) in the resin composition layer is appropriately adjusted according to its type in order to adjust the above-mentioned transmittance, so its content is not limited. However, for example, considering the viewpoints of insulation reliability, film durability, etc., It is preferably 0.01 to 10 parts by mass, more preferably 0.05 to 5 parts by mass, and still more preferably 0.05 to 2 parts by mass relative to 100 parts by mass of the total amount of the thermosetting resin (A).

[無機填充材(C)] 樹脂組成物層中,為了耐燃性之改善、熱傳導率之改善、及熱膨脹率之減少,宜更含有無機填充材(C)。藉由使用無機填充材(C),可改善底部填充材之耐燃性及熱傳導率,且可減少熱膨脹率。 [Inorganic filler (C)] In order to improve the flame resistance, improve the thermal conductivity, and reduce the thermal expansion rate, the resin composition layer preferably contains an inorganic filler (C). By using the inorganic filler (C), the flame resistance and thermal conductivity of the underfill material can be improved, and the thermal expansion rate can be reduced.

無機填充材(C)的平均粒徑並無特別限制,考慮抑制使用粒徑大的無機填充材時之沉降所導致之清漆保存安定性降低,並使樹脂組成物層之熔融黏度及透明性改善,而且考慮因應排列於晶片之電極的窄節距化、電極間之窄間隙化的觀點,宜為400nm以下,為300nm以下再更佳,為1~100nm特佳。 另外,本實施形態中,無機填充材(C)的「平均粒徑」意指無機填充材(C)的中值粒徑。在此中值粒徑意指,以某粒徑作為基準將粉體之粒度分佈分成2群時,使粒徑較大側的粒子之體積和粒徑較小側的粒子之體積成為分別佔全部粉體之50%的粒徑。無機填充材(C)的平均粒徑(中值粒徑)係利用濕式雷射繞射-散射法進行測定。 The average particle size of the inorganic filler (C) is not particularly limited, but consideration should be given to suppressing the decrease in storage stability of the varnish due to sedimentation when using an inorganic filler with a large particle size, and to improving the melt viscosity and transparency of the resin composition layer. , and from the viewpoint of narrowing the pitch of the electrodes arranged on the wafer and narrowing the gap between the electrodes, it is preferably 400 nm or less, more preferably 300 nm or less, and 1 to 100 nm is particularly preferred. In addition, in this embodiment, the "average particle diameter" of the inorganic filler (C) means the median particle diameter of the inorganic filler (C). The median particle diameter here means that when the particle size distribution of the powder is divided into two groups based on a certain particle diameter, the volume of the particles on the larger particle diameter side and the volume of the particles on the smaller particle diameter side respectively account for the entire 50% of the particle size of the powder. The average particle diameter (median particle diameter) of the inorganic filler (C) is measured by a wet laser diffraction-scattering method.

無機填充材(C)並無特別限制,可列舉例如:天然二氧化矽、熔融二氧化矽、非晶態二氧化矽、及中空二氧化矽等二氧化矽;軟水鋁石、氫氧化鋁、氧化鋁、及氮化鋁等鋁化合物;氧化鎂、及氫氧化鎂等鎂化合物;碳酸鈣、及硫酸鈣等鈣化合物;氧化鉬、及鉬酸鋅等鉬化合物;氮化硼;硫酸鋇;天然滑石、及煅燒滑石等滑石(talc);雲母;短纖維狀玻璃、球狀玻璃、及微粉末玻璃(例如E玻璃、T玻璃、D玻璃)等玻璃。又,欲對樹脂組成物層賦予導電性或各向異性導電性時,無機填充材(C)也可使用例如:金、銀、鎳、銅、錫合金、及鈀之金屬粒子。The inorganic filler (C) is not particularly limited, and examples thereof include silica such as natural silica, fused silica, amorphous silica, and hollow silica; boehmite, aluminum hydroxide, Aluminum compounds such as aluminum oxide and aluminum nitride; magnesium compounds such as magnesium oxide and magnesium hydroxide; calcium compounds such as calcium carbonate and calcium sulfate; molybdenum compounds such as molybdenum oxide and zinc molybdate; boron nitride; barium sulfate; Talc (talc) such as natural talc and calcined talc; mica; glass such as short fiber glass, spherical glass, and fine powder glass (such as E glass, T glass, D glass). In addition, when it is desired to impart conductivity or anisotropic conductivity to the resin composition layer, metal particles such as gold, silver, nickel, copper, tin alloy, and palladium may be used as the inorganic filler (C).

它們之中,考慮樹脂組成物層之耐燃性的改善及熱膨脹率之減少的觀點,無機填充材(C)宜包含選自二氧化矽、氫氧化鋁、氧化鋁、軟水鋁石、氮化硼、氮化鋁、氧化鎂、氫氧化鎂及它們的組合之群組中之至少1種,包含選自由二氧化矽、氧化鋁、及氮化硼構成之群組中之至少1種更佳,其中,為二氧化矽再更佳。二氧化矽可列舉例如:Denka(股)製之SFP-120MC(商品名)、及SFP-130MC(商品名);Admatechs(股)製之0.3μmSX-CM1(商品名)、0.3μmSX-EM1(商品名)、0.3μmSV-EM1(商品名)、SC1050-MLQ(商品名)、SC2050-MNU(商品名)、SC2050-MTX(商品名)、2.2μmSC6103-SQ(商品名)、SE2053-SQ(商品名)、Y50SZ-AM1(商品名)、YA050C-MJE(商品名)、YA050C-MJM(商品名)、YA050C-MJF(商品名)、及YA050C-MJA(商品名)。Among them, from the viewpoint of improving the flame resistance of the resin composition layer and reducing the thermal expansion rate, the inorganic filler (C) preferably contains silica, aluminum hydroxide, alumina, boehmite, and boron nitride. , at least one selected from the group consisting of aluminum nitride, magnesium oxide, magnesium hydroxide, and combinations thereof, preferably at least one selected from the group consisting of silicon dioxide, aluminum oxide, and boron nitride, Among them, silicon dioxide is more preferred. Examples of silicon dioxide include: SFP-120MC (trade name) and SFP-130MC (trade name) manufactured by Denka Co., Ltd.; 0.3 μm SX-CM1 (trade name) and 0.3 μm SX-EM1 (trade name) manufactured by Admatechs Co., Ltd. Trade name), 0.3μmSV-EM1 (trade name), SC1050-MLQ (trade name), SC2050-MNU (trade name), SC2050-MTX (trade name), 2.2μm SC6103-SQ (trade name), SE2053-SQ ( Trade name), Y50SZ-AM1 (trade name), YA050C-MJE (trade name), YA050C-MJM (trade name), YA050C-MJF (trade name), and YA050C-MJA (trade name).

這些無機填充材(C)可單獨使用1種或適當混合2種以上來使用。These inorganic fillers (C) can be used individually by 1 type or by mixing 2 or more types appropriately.

無機填充材(C)也可使用經矽烷偶聯劑予以表面處理者。無機填充材(C)之表面處理所使用的矽烷偶聯劑若為通常無機物之表面處理所使用的矽烷偶聯劑,則無特別限制。可列舉例如:乙烯基三甲氧基矽烷、及γ-(甲基)丙烯醯氧基丙基三甲氧基矽烷等乙烯基矽烷系矽烷偶聯劑;N-苯基-3-胺基丙基三甲氧基矽烷等苯基胺基矽烷系矽烷偶聯劑;三甲氧基苯基矽烷等苯基矽烷系矽烷偶聯劑;咪唑矽烷系矽烷偶聯劑。這些矽烷偶聯劑可單獨使用1種或適當混合2種以上來使用。The inorganic filler (C) may be surface-treated with a silane coupling agent. The silane coupling agent used for the surface treatment of the inorganic filler (C) is not particularly limited as long as it is a silane coupling agent commonly used for the surface treatment of inorganic substances. Examples include: vinylsilane-based silane coupling agents such as vinyltrimethoxysilane and γ-(meth)acryloxypropyltrimethoxysilane; N-phenyl-3-aminopropyltrimethyl phenylaminesilane-based silane coupling agents such as oxysilane; phenylsilane-based silane coupling agents such as trimethoxyphenylsilane; imidazolesilane-based silane coupling agents. These silane coupling agents can be used individually by 1 type or by mixing 2 or more types appropriately.

樹脂組成物層中,無機填充材(C)的含量並無特別限制,考慮絕緣可靠性及安裝時確保充分的助熔劑活性之觀點,相對於熱硬化性樹脂(A)之總量100質量份,宜為10~500質量份,為25~400質量份更佳,為30~300質量份再更佳。無機填充材(C)的含量之上限也可為250質量份。The content of the inorganic filler (C) in the resin composition layer is not particularly limited. From the viewpoint of insulation reliability and ensuring sufficient flux activity during installation, it is 100 parts by mass relative to the total amount of the thermosetting resin (A). , preferably 10 to 500 parts by mass, more preferably 25 to 400 parts by mass, and even more preferably 30 to 300 parts by mass. The upper limit of the content of the inorganic filler (C) may be 250 parts by mass.

[助熔劑活性劑(D)] 樹脂組成物層中,為了在覆晶安裝中展現助熔劑活性,宜更含有助熔劑活性劑(D)。助熔劑活性劑(D)若為分子中具有1個以上之酸性部位的有機化合物,則無特別限制。酸性部位宜為例如:磷酸基、酚性羥基、羧基、及磺酸基,考慮在使用樹脂組成物層作為底部填充材的半導體裝置中,會更有效地防止構成接合部之焊料、銅等金屬之遷移及腐蝕的觀點,為酚性羥基或羧基更佳。助熔劑活性劑(D)可單獨使用1種或適當混合2種以上來使用。 [Flux Activator (D)] In order to exhibit flux activity in flip-chip mounting, the resin composition layer should further contain a flux activator (D). The flux activator (D) is not particularly limited as long as it is an organic compound having one or more acidic sites in the molecule. Acidic sites are preferably, for example, phosphate groups, phenolic hydroxyl groups, carboxyl groups, and sulfonic acid groups. It is considered that in semiconductor devices using a resin composition layer as an underfill material, it can more effectively prevent metals such as solder and copper that form the joint. From the perspective of migration and corrosion, phenolic hydroxyl or carboxyl groups are better. The flux activator (D) can be used individually by 1 type or by mixing 2 or more types appropriately.

助熔劑活性劑(D)並無特別限制,考慮充分實施接合部之氧化膜的去除之觀點,酸解離常數pKa宜為3.8以上且15.0以下,考慮兼顧清漆及底部填充材之保存安定性及助熔劑活性之觀點,為4.0以上且14.0以下更佳。The flux activator (D) is not particularly limited. From the perspective of fully removing the oxide film at the joint, the acid dissociation constant pKa is preferably 3.8 or more and 15.0 or less, taking into consideration both the storage stability of the varnish and the underfill material and the auxiliary properties. From the viewpoint of flux activity, it is more preferable that it is 4.0 or more and 14.0 or less.

樹脂組成物層中,助熔劑活性劑(D)的分子量並無特別限制,考慮防止在覆晶安裝中,助熔劑活性在展現前即已揮發,亦即在去除接合部的氧化膜前助熔劑活性劑(D)即已揮發之觀點,分子量宜為200以上,為250以上更佳。考慮具有作為助熔劑活性劑之運動性並獲得充分的助熔劑活性之觀點,助熔劑活性劑(D)的分子量宜為8000以下,為1000以下更佳,為600以下再更佳。In the resin composition layer, the molecular weight of the flux activator (D) is not particularly limited. Consider preventing the flux activity from volatilizing before it is displayed in flip-chip mounting, that is, before removing the oxide film from the joint. From the viewpoint that the active agent (D) has volatilized, the molecular weight is preferably above 200, and more preferably above 250. From the viewpoint of having mobility as a flux activator and obtaining sufficient flux activity, the molecular weight of the flux activator (D) is preferably 8,000 or less, more preferably 1,000 or less, and still more preferably 600 or less.

助熔劑活性劑(D)並無特別限制可列舉例如:松脂酸、新松脂酸(neoabietic acid)、去氫松脂酸(dehydroabietic acid)、海松脂酸(pimaric acid)、異海松脂酸(pimaric acid)、長葉松脂酸(palustric acid)、雙酚酸、二氫松脂酸(dihydroabietic acid)、四氫松脂酸、氫化松香酯、及松香改性馬來酸樹脂等松香系樹脂;N,N’-雙(亞柳基)-1,2-丙烷二胺、及N,N’-雙(亞柳基)-1,3-丙烷二胺等二胺系;2-[雙(4-羥基苯基)甲基]苯甲酸。這些助熔劑活性劑(D)考慮對溶劑之溶解性、清漆及底部填充材之保存安定性優良的觀點較為理想。The flux activator (D) is not particularly limited and examples thereof include: rosinic acid, neoabietic acid, dehydroabietic acid, pimaric acid, and pimaric acid. ), longleaf rosin acid (palustric acid), bisphenolic acid, dihydroabietic acid (dihydroabietic acid), tetrahydrorosinic acid, hydrogenated rosin ester, and rosin-modified maleic acid resin and other rosin resins; N, N' -Diamine series such as bis(saloylene)-1,2-propanediamine, and N,N'-bis(saloylene)-1,3-propanediamine; 2-[bis(4-hydroxybenzene Methyl]benzoic acid. These flux activators (D) are ideal from the viewpoint of excellent solubility in solvents and excellent storage stability of varnish and underfill materials.

它們之中,考慮防止熱硬化性樹脂(A)所導致之失活的觀點,助熔劑活性劑(D)包含選自由去氫松脂酸、雙酚酸、二氫松脂酸、四氫松脂酸、氫化松香酯、松香改性馬來酸樹脂、N,N’-雙(亞柳基)-1,2-丙烷二胺、及N,N’-雙(亞柳基)-1,3-丙烷二胺構成之群組中之至少1種更佳,包含松香系樹脂特佳。這些助熔劑活性劑由於反應性較低,考慮幾乎不會引起和熱硬化性樹脂(A)之反應,並維持去除氧化膜所必須之充足的助熔劑活性之觀點,更為理想。又,考慮可獲得更進一步優良的助熔劑活性之觀點,助熔劑活性劑(D)為氫化松香酯的話,又更理想。Among them, the flux activator (D) is selected from the group consisting of dehydrorosinic acid, bisphenolic acid, dihydrorosinic acid, tetrahydrorosinic acid, and the like, from the viewpoint of preventing deactivation of the thermosetting resin (A). Hydrogenated rosin ester, rosin-modified maleic acid resin, N,N'-bis(salosinyl)-1,2-propanediamine, and N,N'-bis(salvinyl)-1,3-propane It is more preferable that it is at least one type from the group consisting of diamines, and it is particularly preferable that it contains a rosin-based resin. Since these flux activators have low reactivity, they are more preferable from the viewpoint of causing little reaction with the thermosetting resin (A) and maintaining sufficient flux activity necessary for removing the oxide film. Furthermore, from the viewpoint of obtaining further excellent flux activity, it is more preferable that the flux activator (D) is hydrogenated rosin ester.

助熔劑活性劑(D)可使用市售品。松香系樹脂可列舉例如:PINECRYSTAL(註冊商標,以下皆同)系列之KR-85(商品名,以下皆同)、KR-612、KR-614、KE-100、KE-311、PE-590、KE-359、KE-604、KR-120、KR-140、KR-614、D-6011、及KR-50M;MALKYD No32(以上為荒川化學工業股份有限公司製)等。As the flux activator (D), a commercially available product can be used. Examples of rosin-based resins include: KR-85 (trade name, the same below), KR-612, KR-614, KE-100, KE-311, PE-590, KE-359, KE-604, KR-120, KR-140, KR-614, D-6011, and KR-50M; MALKYD No32 (the above are manufactured by Arakawa Chemical Industry Co., Ltd.), etc.

樹脂組成物層中的,助熔劑活性劑(D)的含量並無特別限制,考慮絕緣可靠性及安裝時確保充分的助熔劑活性之觀點,相對於熱硬化性樹脂(A)之總量100質量份,宜為3~70質量份,為5~50質量份更佳,為8~40質量份再更佳。The content of the flux activator (D) in the resin composition layer is not particularly limited. From the viewpoint of insulation reliability and ensuring sufficient flux activity during installation, it is 100% of the total amount of the thermosetting resin (A). Parts by mass are preferably 3 to 70 parts by mass, preferably 5 to 50 parts by mass, and even more preferably 8 to 40 parts by mass.

[硬化觸媒(E)] 樹脂組成物層可更含有硬化觸媒(E)。樹脂組成物層藉由含有硬化觸媒(E),可更理想地控制熱硬化性樹脂(A)之聚合速度,而且有可獲得具有適當的成形性之樹脂組成物的傾向。硬化觸媒若為可促進熱硬化性樹脂(A)之聚合的化合物,則無特別限制。硬化觸媒(E)可單獨使用1種或混合使用2種以上。 [Hardening Catalyst (E)] The resin composition layer may further contain a curing catalyst (E). By containing the curing catalyst (E) in the resin composition layer, the polymerization rate of the thermosetting resin (A) can be more ideally controlled, and a resin composition with appropriate formability tends to be obtained. The curing catalyst is not particularly limited as long as it is a compound that can accelerate the polymerization of the thermosetting resin (A). The hardening catalyst (E) can be used individually by 1 type or in mixture of 2 or more types.

硬化觸媒(E)並無特別限制,可列舉例如:有機過氧化物、咪唑化合物、偶氮化合物、以及三乙胺及三丁胺等三級胺。它們之中,考慮可獲得良好的聚合速度,且可獲得良好的硬化速度之觀點,宜包含選自有機過氧化物、咪唑化合物、及它們的組合之群組中之至少1種,包含有機過氧化物及咪唑化合物之兩者更佳。The curing catalyst (E) is not particularly limited, and examples thereof include organic peroxides, imidazole compounds, azo compounds, and tertiary amines such as triethylamine and tributylamine. Among them, from the viewpoint of obtaining a good polymerization speed and a good hardening speed, it is preferable to include at least one selected from the group consisting of organic peroxides, imidazole compounds, and combinations thereof, including organic peroxides. Both oxides and imidazole compounds are more preferred.

樹脂組成物層中的硬化觸媒(E)的含量並無特別限制,考慮可獲得良好的硬化速度之觀點,相對於熱硬化性樹脂(A)之總量100質量份,宜為0.02~10質量份,為0.05~8質量份更佳。The content of the curing catalyst (E) in the resin composition layer is not particularly limited. From the viewpoint of obtaining a good curing speed, it is preferably 0.02 to 10 parts by mass based on 100 parts by mass of the total amount of the thermosetting resin (A). Parts by mass, preferably 0.05 to 8 parts by mass.

(有機過氧化物) 本實施形態之有機過氧化物若為因熱而會釋放出可使熱硬化性樹脂(A)聚合的活性物質(自由基)之化合物,則無特別限制,可使用公知的有機過氧化物。有機過氧化物可單獨使用1種或混合使用2種以上。 (organic peroxide) The organic peroxide of this embodiment is not particularly limited as long as it is a compound that releases an active material (radical) capable of polymerizing the thermosetting resin (A) due to heat, and a known organic peroxide can be used. The organic peroxide can be used individually by 1 type or in mixture of 2 or more types.

本實施形態中,有機過氧化物的10小時半衰期溫度並無特別限制,宜為100℃以上,考慮製造性之觀點,為110℃以上更佳。為了可達成製造時之溶劑去除步驟的高溫化,有機過氧化物宜符合前述範圍的10小時半衰期溫度。In this embodiment, the 10-hour half-life temperature of the organic peroxide is not particularly limited, but it is preferably 100°C or higher, and from the viewpoint of manufacturability, it is more preferably 110°C or higher. In order to achieve high temperatures in the solvent removal step during production, the organic peroxide should preferably have a half-life temperature of 10 hours within the aforementioned range.

有機過氧化物可列舉例如:過氧化二異丙苯、二(2-三級丁基過氧化異丙基)苯、1,1,3,3-四甲基丁基過氧化氫、2,5-二甲基-2,5-雙(過氧化三級丁基)己炔-3、過氧化苯甲醯、二(三級丁基)過氧化物、過氧化甲乙酮、及環己酮過氧化物等酮過氧化物;1,1-二(過氧化三級丁基)環己烷,及2,2-二(4,4-二(過氧化三級丁基)環己基)丙烷等過氧化縮酮;三級丁基過氧化氫、對薄荷烷(menthane)過氧化氫、二異丙苯過氧化氫、異丙苯過氧化氫、及三級丁基過氧化氫等過氧化氫;二(2-三級丁基過氧化異丙基)苯、2,5-二甲基-2,5-二(過氧化三級丁基)己烷、三級丁基過氧化異丙苯、二(三級己基)過氧化物、2,5-二甲基-2,5-二(過氧化三級丁基)己炔-3、α,α’-二(過氧化三級丁基)二異丙苯、及二(三級丁基)過氧化物等二烷基過氧化物;二過氧化苯甲醯、及二(4-甲基苯甲醯基)過氧化物等二醯基過氧化物;過氧化二碳酸二正丙酯、及過氧化二碳酸二異丙酯等過氧化二碳酸酯;2,5-二甲基-2,5-二(過氧化苯甲醯基)己烷、過氧化苯甲酸三級己酯、過氧化苯甲酸三級丁酯、及過氧化-2-乙基己酸三級丁酯等過氧化酯等。考慮可獲得更良好的反應速度及硬化速度之觀點,宜為選自由過氧化二異丙苯、二(2-三級丁基過氧化異丙基)苯、1,1,3,3-四甲基丁基過氧化氫、2,5-二甲基-2,5-雙(過氧化三級丁基)己炔-3、α,α’-二(三級丁基過氧化)二異丙苯、及三級丁基過氧化氫構成之群組中之至少1種。Examples of organic peroxides include dicumyl peroxide, bis(2-tertiary butylisopropylperoxy)benzene, 1,1,3,3-tetramethylbutyl hydroperoxide, 2, 5-dimethyl-2,5-bis(tertiary butyl peroxide) hexyne-3, benzyl peroxide, di(tertiary butyl) peroxide, methyl ethyl ketone peroxide, and cyclohexanone peroxide Ketone peroxides such as oxides; 1,1-di(tertiary butyl peroxide) cyclohexane, and 2,2-bis(4,4-di(tertiary butyl peroxide) cyclohexyl) propane, etc. Peroxide ketals; hydrogen peroxides such as tertiary butyl hydroperoxide, menthane hydroperoxide, dicumyl hydroperoxide, cumene hydroperoxide, and tertiary butyl hydroperoxide ; Bis(2-tertiary butylperoxyisopropyl)benzene, 2,5-dimethyl-2,5-di(tertiary butylperoxide)hexane, tertiary butylcumyl peroxide , di(tertiary hexyl) peroxide, 2,5-dimethyl-2,5-di(tertiary butyl peroxide) hexyne-3, α,α'-di(tertiary butyl peroxide) ) Diisopropylbenzene, and di(tertiary butyl) peroxide and other dialkyl peroxides; Diperoxide benzyl peroxide, and di(4-methylbenzyl) peroxide and other dihydrogens peroxide; peroxydicarbonates such as di-n-propyl peroxydicarbonate and diisopropyl peroxydicarbonate; 2,5-dimethyl-2,5-bis(peroxybenzoyl) ) Hexane, tertiary hexyl peroxybenzoate, tertiary butyl peroxybenzoate, and tertiary butyl peroxy-2-ethylhexanoate and other peroxy esters. From the viewpoint of obtaining better reaction speed and hardening speed, it is appropriate to select dicumyl peroxide, di(2-tertiary butylperoxyisopropyl)benzene, 1,1,3,3-tetrakis Methyl butyl hydroperoxide, 2,5-dimethyl-2,5-bis(tertiary butyl peroxide)hexyne-3, α,α'-bis(tertiary butyl peroxy)diiso At least one of the group consisting of propylbenzene and tertiary butyl hydroperoxide.

樹脂組成物層中,有機過氧化物的含量並無特別限制,考慮可獲得更進一步良好的聚合速度及硬化速度之觀點,相對於熱硬化性樹脂(A)之總量100質量份,宜為0.02~10質量份,為0.05~8質量份更佳。The content of the organic peroxide in the resin composition layer is not particularly limited. From the viewpoint of obtaining further good polymerization speed and hardening speed, it is preferably: 0.02~10 parts by mass, more preferably 0.05~8 parts by mass.

(咪唑化合物) 咪唑化合物只要可促進熱硬化性樹脂(A)之聚合,則無特別限制,可使用公知的咪唑化合物。咪唑化合物可使用1種或混合使用2種以上。 (imidazole compound) The imidazole compound is not particularly limited as long as it can accelerate the polymerization of the thermosetting resin (A), and known imidazole compounds can be used. One type of imidazole compound may be used, or two or more types may be mixed and used.

咪唑化合物可列舉例如:2-乙基-4-甲基咪唑、2-苯基-4-甲基咪唑、1-苄基-2-苯基咪唑、2,4,5-三苯基咪唑、三乙胺及三丁胺等三級胺、以及它們的衍生物。其中,考慮反應速度及硬化速度之調整更容易之觀點,宜為2-乙基-4-甲基咪唑。Examples of imidazole compounds include: 2-ethyl-4-methylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-phenylimidazole, 2,4,5-triphenylimidazole, Tertiary amines such as triethylamine and tributylamine, and their derivatives. Among them, 2-ethyl-4-methylimidazole is preferable from the viewpoint of easier adjustment of reaction speed and hardening speed.

樹脂組成物層中,咪唑化合物的含量並無特別限制,考慮聚合速度及硬化速度之調整更為容易之觀點,相對於熱硬化性樹脂(A)之總量100質量份,宜為0.02~10質量份,為0.05~8質量份更佳。The content of the imidazole compound in the resin composition layer is not particularly limited. From the viewpoint of easier adjustment of the polymerization speed and curing speed, it is preferably 0.02 to 10 parts by mass based on 100 parts by mass of the total amount of the thermosetting resin (A). Parts by mass, preferably 0.05 to 8 parts by mass.

(偶氮化合物) 偶氮化合物只要可促進熱硬化性樹脂(A)之聚合,則無特別限制,可使用公知的偶氮化合物。偶氮化合物可單獨使用1種或混合使用2種以上。 偶氮化合物可列舉例如:2,2’-偶氮雙丁腈、2,2’-偶氮雙(2,4-二甲基戊腈)、及2,2’-偶氮雙(4-甲氧基-2,4-二甲基戊腈)等。 (Azo compound) The azo compound is not particularly limited as long as it can accelerate the polymerization of the thermosetting resin (A), and known azo compounds can be used. The azo compound can be used individually by 1 type or in mixture of 2 or more types. Examples of azo compounds include 2,2'-azobisbutyronitrile, 2,2'-azobis(2,4-dimethylvaleronitrile), and 2,2'-azobis(4- Methoxy-2,4-dimethylvaleronitrile), etc.

樹脂組成物層中,偶氮化合物的含量並無特別限制,考慮聚合速度及硬化速度之調整更為容易之觀點,相對於熱硬化性樹脂(A)之總量100質量份,宜為0.02~10質量份,為0.05~8質量份更佳。The content of the azo compound in the resin composition layer is not particularly limited. From the viewpoint of easier adjustment of the polymerization rate and curing rate, it is preferably 0.02 to 0.02 parts by mass based on 100 parts by mass of the total amount of the thermosetting resin (A). 10 parts by mass, preferably 0.05~8 parts by mass.

[硬化劑(F)] 樹脂組成物層也可更含有硬化劑(F)。硬化劑(F)係為了提高熱硬化性樹脂(A)的硬化性、及為了調整熱硬化性樹脂(A)的硬化速度等而使用。硬化劑(F)可因應使用的熱硬化性樹脂(A)之種類而適當地選定公知者,可列舉例如:酚醛樹脂、胺類、硫醇類等。 [Hardening agent (F)] The resin composition layer may further contain a hardener (F). The curing agent (F) is used to improve the curing properties of the thermosetting resin (A) and to adjust the curing speed of the thermosetting resin (A). The hardening agent (F) can be appropriately selected from a known one according to the type of the thermosetting resin (A) used, and examples thereof include phenolic resins, amines, mercaptans, and the like.

本實施形態中,硬化劑(F)的含量並無特別限制,考慮熱硬化性樹脂(A)的硬化性、硬化速度的調整更容易之觀點,相對於熱硬化性樹脂(A)與硬化劑(F)之合計100質量份,宜為3~80質量份,為5~70質量份再更佳,為15~50質量份特佳。In this embodiment, the content of the curing agent (F) is not particularly limited. From the viewpoint of easier adjustment of the curing properties and curing speed of the thermosetting resin (A), the content of the curing agent (A) and the curing agent is The total 100 parts by mass of (F) is preferably 3 to 80 parts by mass, more preferably 5 to 70 parts by mass, and particularly preferably 15 to 50 parts by mass.

(胺基三𠯤酚醛清漆樹脂) 又,並非特別限制,但硬化劑(F)可使用例如胺基三𠯤酚醛清漆樹脂。例如,對於以馬來醯亞胺化合物或檸康醯亞胺化合物作為主成分之樹脂組成物使用胺基三𠯤酚醛清漆樹脂作為硬化劑(F)時,胺基三𠯤酚醛清漆樹脂由於具有三𠯤骨架,故可和馬來醯亞胺基及/或檸康醯亞胺基良好地反應。因此,例如可利用胺基三𠯤酚醛清漆樹脂邊理想地控制熱硬化性樹脂之自由基聚合反應的速度邊使其硬化。又,胺基三𠯤酚醛清漆樹脂係於三𠯤骨架鍵結有酚醛清漆樹脂骨架,故即使在硬化後仍可大量含有羥基及胺基。因此,即使在硬化後,在這些基與晶片之矽醇基仍會產生良好的化學鍵結,故可使樹脂組成物層的晶片黏接性改善。 (Amino tri-phenolic varnish resin) In addition, it is not particularly limited, but as the hardening agent (F), for example, amino trisulfonate novolac resin can be used. For example, when an amino tris-novolak resin is used as the hardener (F) for a resin composition containing a maleimine compound or a citrucon-imine compound as a main component, the amino tris-novolak resin has three 𠯤 skeleton, so it can react well with maleimide and/or citraconimine groups. Therefore, for example, the thermosetting resin can be hardened using an amino tris-novolac resin while ideally controlling the speed of the radical polymerization reaction. In addition, the amine-based novolak resin has a novolak resin skeleton bonded to the triskeleton, so it can still contain a large amount of hydroxyl groups and amine groups even after hardening. Therefore, even after hardening, good chemical bonding will still occur between these groups and the silicone groups of the chip, so the chip adhesion of the resin composition layer can be improved.

樹脂組成物層中,考慮使低空隙性及晶片黏接性改善之觀點,可含有胺基三𠯤酚醛清漆樹脂。胺基三𠯤酚醛清漆樹脂若為分子內具有三𠯤環之苯酚甲醛樹脂(酚醛樹脂),則可使用公知的樹脂。如此的胺基三𠯤酚醛清漆樹脂可利用公知方法製備,例如可藉由將酚醛樹脂以三聚氰胺等氮化合物進行改性而得。胺基三𠯤酚醛清漆樹脂可單獨使用1種或適當混合2種以上來使用。The resin composition layer may contain an amine-based novolac resin from the viewpoint of improving low voids and chip adhesion. As long as the amino tris-novolac resin is a phenol-formaldehyde resin (phenol-formaldehyde resin) having a tris-novolac ring in the molecule, a known resin can be used. Such an amino tri-novolak resin can be prepared by a known method, for example, it can be obtained by modifying a phenolic resin with a nitrogen compound such as melamine. Amino tri-novolak resin can be used alone or by appropriately mixing two or more types.

樹脂組成物層中,胺基三𠯤酚醛清漆樹脂的含量,相對於胺基三𠯤酚醛清漆樹脂與熱硬化性樹脂(A)之合計100質量份,宜為5~70質量份,考慮可獲得更優良的低空隙性及晶片黏接性之觀點,為15~50質量份更佳,為20~40質量份特佳。In the resin composition layer, the content of the amino tris-novolak resin is preferably 5 to 70 parts by mass relative to 100 parts by mass of the total of the amino tris-novolak resin and the thermosetting resin (A), considering that it can be obtained From the viewpoint of better low void properties and chip adhesion, 15 to 50 parts by mass is more preferred, and 20 to 40 parts by mass is particularly preferred.

胺基三𠯤酚醛清漆樹脂,考慮可獲得更進一步優良的低空隙性及晶片黏接性之觀點,其重量平均分子量宜為300~9,500,為500~5,000更佳。另外,本實施形態中,重量平均分子量係利用GPC(凝膠滲透層析)法求得之標準聚苯乙烯換算之值。From the perspective of obtaining further excellent low voids and chip adhesion, the weight average molecular weight of the amino tri-novolak resin is preferably 300 to 9,500, and more preferably 500 to 5,000. In addition, in this embodiment, the weight average molecular weight is a standard polystyrene-converted value obtained by GPC (gel permeation chromatography) method.

胺基三𠯤酚醛清漆樹脂,考慮可獲得更進一步優良的低空隙性及晶片黏接性之觀點,其氮含量在胺基三𠯤酚醛清漆樹脂100質量%中,宜為10~25質量%,考慮可獲得更進一步優良的低空隙性,同時可獲得更進一步優良的晶片黏接性之觀點,為15~20質量%更佳。From the viewpoint of obtaining further excellent low voids and wafer adhesion, the nitrogen content of amino tris-novolak resin is preferably 10 to 25 mass % in 100 mass % of amino tris-novolac resin. From the viewpoint of obtaining further excellent low void properties and at the same time obtaining further excellent wafer adhesion, 15 to 20 mass % is more preferable.

胺基三𠯤酚醛清漆樹脂,考慮可獲得更進一步優良的低空隙性及晶片黏接性之觀點,其羥基當量宜為80~200g/eq.,為100~180g/eq.更佳。另外,本實施形態中,羥基當量表示為了將胺基三𠯤酚醛清漆樹脂1g中所含的羥基予以乙醯化所需要的氫氧化鉀之mg數。具體而言,係依據JIS K 0070進行測定。From the perspective of obtaining further excellent low voids and chip adhesion, the hydroxyl equivalent weight of the amine-based tri-novolak resin is preferably 80~200g/eq., and more preferably 100~180g/eq. In addition, in this embodiment, the hydroxyl equivalent represents the number of mg of potassium hydroxide required to acetylate the hydroxyl group contained in 1 g of the amino tris-novolak resin. Specifically, the measurement is performed in accordance with JIS K 0070.

胺基三𠯤酚醛清漆樹脂,考慮可獲得更進一步優良的低空隙性及晶片黏接性之觀點,宜包含選自由下式(1)表示之化合物及下式(2)表示之化合物構成之群組中之1種以上。From the viewpoint of obtaining further excellent low void properties and chip adhesion, the amino tris-novolac resin preferably contains a group selected from the group consisting of the compound represented by the following formula (1) and the compound represented by the following formula (2) More than 1 species in the group.

[化16] [Chemical 16]

式(1)中,R 1各自獨立地表示氫原子、甲基、或乙基。考慮可獲得更進一步優良的低空隙性及晶片黏接性之觀點,R 1宜各自獨立地為氫原子、或甲基。l、m、及n各自獨立地表示0~10之整數。考慮可獲得更進一步優良的低空隙性及晶片黏接性之觀點,l、m、及n宜各自獨立地為1~6之整數。(l+m+n)表示1~20之整數。考慮可獲得更進一步優良的低空隙性及晶片黏接性之觀點,(l+m+n)宜為3~18之整數。另外,式(1)表示之化合物也可為例如:包含式(1)中,R 1之官能基或其數值不同的化合物;l、m、及n之數值不同的化合物;(l+m+n)之數值不同的化合物等之混合物。 In formula (1), R 1 each independently represents a hydrogen atom, a methyl group, or an ethyl group. From the viewpoint of obtaining further excellent low void properties and wafer adhesion, R 1 is preferably each independently a hydrogen atom or a methyl group. l, m, and n each independently represent an integer from 0 to 10. From the viewpoint of obtaining further excellent low void properties and wafer adhesion, l, m, and n are preferably each independently an integer from 1 to 6. (l+m+n) represents an integer from 1 to 20. From the viewpoint of obtaining further excellent low void properties and chip adhesion, (l+m+n) is preferably an integer from 3 to 18. In addition, the compound represented by the formula (1) may also be, for example: a compound containing the functional group of R 1 in the formula (1) or a compound with a different numerical value; a compound with a different numerical value for l, m, and n; (l+m+ n) A mixture of compounds with different numerical values.

[化17] [Chemical 17]

式(2)中,R 2各自獨立地表示氫原子、甲基、或乙基。考慮可獲得更進一步優良的低空隙性及晶片黏接性之觀點,R 2宜各自獨立地為氫原子、或甲基。o、p、q、r、及s各自獨立地表示0~10之整數。考慮可獲得更進一步優良的低空隙性及晶片黏接性之觀點,o、p、q、r、及s宜各自獨立地為1~4之整數。(o+p+q+r+s)表示1~20之整數。考慮可獲得更進一步優良的低空隙性及晶片黏接性之觀點,(o+p+q+r+s)宜為5~20之整數。另外,式(2)表示之化合物也可為例如:包含式(2)中,R 2之官能基或其數值不同的化合物;o、p、q、r、及s之數值不同的化合物;(o+p+q+r+s)之數值不同的化合物等之混合物。 In formula (2), R 2 each independently represents a hydrogen atom, a methyl group, or an ethyl group. From the viewpoint of obtaining further excellent low void properties and wafer adhesion, R 2 is preferably each independently a hydrogen atom or a methyl group. o, p, q, r, and s each independently represent an integer from 0 to 10. From the viewpoint of obtaining further excellent low void properties and wafer adhesion, it is preferable that o, p, q, r, and s are each independently an integer between 1 and 4. (o+p+q+r+s) represents an integer from 1 to 20. From the viewpoint of obtaining further excellent low void properties and chip adhesion, (o+p+q+r+s) is preferably an integer between 5 and 20. In addition, the compound represented by formula (2) may also be, for example: a compound containing the functional group of R 2 in formula (2) or a compound with different numerical values; a compound with different numerical values for o, p, q, r, and s; ( A mixture of compounds with different values of o+p+q+r+s).

考慮可獲得又更進一步優良的低空隙性及晶片黏接性之觀點,胺基三𠯤酚醛清漆樹脂為式(1)表示之化合物與式(2)表示之化合物之混合物更佳。如此的混合物考慮可獲得更進一步優良的低空隙性及晶片黏接性之觀點,式(1)表示之化合物與式(2)表示之化合物之質量比(式(1)表示之化合物(質量份):式(2)表示之化合物(質量份))宜為50:50~90:10,為60:40~85:15更佳。From the viewpoint of obtaining further excellent low voids and wafer adhesion, it is more preferable that the amino tris-novolac resin be a mixture of the compound represented by formula (1) and the compound represented by formula (2). From the viewpoint that such a mixture can obtain further excellent low voids and wafer adhesion, the mass ratio of the compound represented by formula (1) to the compound represented by formula (2) (compound represented by formula (1) (mass parts ): The compound represented by formula (2) (parts by mass) is preferably 50:50~90:10, more preferably 60:40~85:15.

胺基三𠯤酚醛清漆樹脂也可使用市售品,可列舉例如:DIC(股)製之LA-1356(商品名)、LA-3018-50P(商品名)、LA-7052(商品名)、LA-7054(商品名)、LA-7751(商品名)。Commercially available amino tri-novolak resins can also be used. Examples include: LA-1356 (trade name), LA-3018-50P (trade name), LA-7052 (trade name) manufactured by DIC Co., Ltd. LA-7054 (trade name), LA-7751 (trade name).

[其它成分] 樹脂組成物層含有熱硬化性樹脂(A)、可見光吸收劑(B)等,而且也可含有1種或2種以上之其它成分。 其它成分並無特別限制,可列舉例如:可撓性賦予成分。可撓性賦予成分若為可對於含有樹脂組成物之層賦予可撓性之類的成分,則無特別限制。如此的成分可列舉例如除了熱硬化性樹脂(A)、可見光吸收劑(B)、無機填充材(C)、助熔劑活性劑(D)、硬化觸媒(E)、硬化劑(F)之外的:聚醯亞胺、聚醯胺醯亞胺、聚苯乙烯、聚烯烴、苯乙烯-丁二烯橡膠(SBR)、異戊二烯橡膠(IR)、丁二烯橡膠(BR)、(甲基)丙烯腈丁二烯橡膠(NBR)、聚胺甲酸酯、聚丙烯、(甲基)丙烯酸寡聚物、(甲基)丙烯酸聚合物、及聚矽氧樹脂等熱塑性高分子化合物。這些可撓性賦予成分可單獨使用1種或適當混合2種以上來使用。 [Other ingredients] The resin composition layer contains a thermosetting resin (A), a visible light absorber (B), etc., and may also contain one or more other components. Other components are not particularly limited, and examples thereof include flexibility-imparting components. The flexibility-imparting component is not particularly limited as long as it can impart flexibility to the layer containing the resin composition. Examples of such components include thermosetting resin (A), visible light absorber (B), inorganic filler (C), flux activator (D), curing catalyst (E), and hardener (F). Exceptions: polyamide, polyamide, polystyrene, polyolefin, styrene-butadiene rubber (SBR), isoprene rubber (IR), butadiene rubber (BR), Thermoplastic polymer compounds such as (meth)acrylonitrile butadiene rubber (NBR), polyurethane, polypropylene, (meth)acrylic acid oligomer, (meth)acrylic acid polymer, and polysiloxane resin . These flexibility imparting components can be used individually by 1 type or by mixing 2 or more types appropriately.

又,樹脂組成物層為了使樹脂成分與無機填充材(C)之界面的黏接性及吸濕耐熱性更為改善,也可含有矽烷偶聯劑作為其它成分。矽烷偶聯劑可列舉例如:乙烯基三甲氧基矽烷、及γ-(甲基)丙烯醯氧基丙基三甲氧基矽烷等乙烯基矽烷系矽烷偶聯劑;N-苯基-3-胺基丙基三甲氧基矽烷等苯基胺基矽烷系矽烷偶聯劑;三甲氧基苯基矽烷等苯基矽烷系矽烷偶聯劑;咪唑矽烷系矽烷偶聯劑。這些矽烷偶聯劑可單獨使用1種或適當混合2種以上來使用。 使用矽烷偶聯劑時,其含量並無特別限制,考慮吸濕耐熱性進一步改善及覆晶安裝時的揮發量進一步減少之觀點,相對於熱硬化性樹脂(A)之總量100質量份,宜為0.02~20質量份。 In addition, the resin composition layer may contain a silane coupling agent as another component in order to further improve the adhesion and moisture absorption and heat resistance of the interface between the resin component and the inorganic filler (C). Examples of the silane coupling agent include vinylsilane-based silane coupling agents such as vinyltrimethoxysilane and γ-(meth)acryloxypropyltrimethoxysilane; N-phenyl-3-amine Phenylamine silane-based silane coupling agents such as propyltrimethoxysilane; phenylsilane-based silane coupling agents such as trimethoxyphenylsilane; imidazole silane-based silane coupling agents. These silane coupling agents can be used individually by 1 type or by mixing 2 or more types appropriately. When using a silane coupling agent, its content is not particularly limited. From the viewpoint of further improving moisture absorption and heat resistance and further reducing the amount of volatilization during flip-chip mounting, relative to 100 parts by mass of the total amount of thermosetting resin (A), It is suitable to be 0.02~20 parts by mass.

又,樹脂組成物層中,為了薄膜狀底部填充材之製造性進一步改善及填充材之進一步的分散性改善等,也可含有濕潤分散劑作為其它成分。濕潤分散劑若為通常塗料等所使用的濕潤分散劑,則無特別限制。可列舉例如:BYK(股)製之DISPERBYK(註冊商標)-110(商品名)、DISPERBYK-111(商品名)、DISPERBYK-180(商品名)、DISPERBYK-161(商品名)、BYK-W996(商品名)、BYK-W9010(商品名)、及BYK-W903(商品名)。這些濕潤分散劑可單獨使用1種或適當混合2種以上來使用。 使用濕潤分散劑時,其含量並無特別限制,考慮薄膜狀底部填充材之製造性進一步改善的觀點,相對於無機填充材(C)100質量份,宜設為0.1~5質量份,設為0.5~3質量份更佳。另外,合併使用2種以上之濕潤分散劑時,它們的合計量宜符合前述比率。 In addition, the resin composition layer may also contain a moist dispersing agent as another component in order to further improve the manufacturability of the film-like underfill material and further improve the dispersibility of the filler material. The wetting and dispersing agent is not particularly limited as long as it is a wetting and dispersing agent commonly used in paints and the like. Examples include DISPERBYK (registered trademark)-110 (trade name), DISPERBYK-111 (trade name), DISPERBYK-180 (trade name), DISPERBYK-161 (trade name), BYK-W996 (trade name) manufactured by BYK Co., Ltd. (trade name), BYK-W9010 (trade name), and BYK-W903 (trade name). These moistening dispersants can be used alone or in an appropriate mixture of two or more kinds. When a wet dispersant is used, its content is not particularly limited. From the viewpoint of further improving the manufacturability of the film-like underfill material, it is preferably 0.1 to 5 parts by mass based on 100 parts by mass of the inorganic filler (C). 0.5~3 parts by mass is better. In addition, when two or more kinds of wetting and dispersing agents are used in combination, their total amount should comply with the above-mentioned ratio.

樹脂組成物層中,在不損及所期待的特性之範圍內,也可因各種目的而含有各種添加劑作為其它成分。添加劑可列舉例如:增黏劑、潤滑劑、消泡劑、整平劑、亮光劑、阻燃劑、及離子捕獲劑。這些添加劑可單獨使用1種或適當混合2種以上來使用。 樹脂組成物層中,其它添加劑的含量並無特別限制,通常相對於熱硬化性樹脂(A)之總量100質量份,分別為0.01~10質量份。 The resin composition layer may contain various additives as other components for various purposes within a range that does not impair desired characteristics. Examples of additives include: tackifiers, lubricants, defoaming agents, leveling agents, brighteners, flame retardants, and ion trapping agents. These additives can be used individually by 1 type or by mixing 2 or more types appropriately. The content of other additives in the resin composition layer is not particularly limited, but is usually 0.01 to 10 parts by mass relative to 100 parts by mass of the total amount of thermosetting resin (A).

[薄膜狀底部填充材用樹脂組成物之製備方法] 如上所述,本實施形態之薄膜狀底部填充材用樹脂組成物含有熱硬化性樹脂(A)、可見光吸收劑(B)等,只要可獲得具有上述組成者,則製備方法並無特別限制。樹脂組成物例如可藉由將熱硬化性樹脂(A)及可見光吸收劑(B)、及因應需要之無機填充材(C)、助熔劑活性劑(D)、硬化觸媒(E)、硬化劑(F)、以及其它成分進行適當混合來製備。也可因應需要製成將這些成分溶解或分散於有機溶劑後的清漆之形態。清漆可理想地使用於製作薄膜狀底部填充材時。薄膜狀底部填充材之具體的製造方法可參考上述疊層體之製造方法及後述實施例。 另外,本實施形態之薄膜狀底部填充材用樹脂組成物可理想地使用於本實施形態之薄膜狀底部填充材的樹脂組成物層之製作,惟本實施形態並不限於此,本實施形態之薄膜狀底部填充材以外的薄膜狀底部填充材亦可適用。 [Preparation method of resin composition for film-like underfill material] As described above, the resin composition for film-like underfill materials of this embodiment contains a thermosetting resin (A), a visible light absorber (B), etc., and the preparation method is not particularly limited as long as it has the above composition. The resin composition can be cured, for example, by combining a thermosetting resin (A) and a visible light absorber (B), as well as an inorganic filler (C), a flux activator (D), a curing catalyst (E), and an optional inorganic filler (C) if necessary. Agent (F) and other ingredients are mixed appropriately to prepare. If necessary, these components may be dissolved or dispersed in an organic solvent to form a varnish. Varnishes are ideal for producing film-like underfill materials. For the specific manufacturing method of the film-like underfill material, please refer to the above-mentioned manufacturing method of the laminate and the examples described below. In addition, the resin composition for film-like underfill materials of this embodiment can be ideally used to produce the resin composition layer of the film-like underfill material of this embodiment. However, this embodiment is not limited thereto. Film-like underfill materials other than film-like underfill materials are also applicable.

有機溶劑若為可各別理想地溶解或分散前述成分,且不損及本發明的效果者,則無特別限制。有機溶劑可列舉例如:甲醇、乙醇、及丙醇等醇類;丙酮、甲乙酮(以下有時省略稱「MEK」)、及甲基異丁基酮等酮類;二甲基乙醯胺、及二甲基甲醯胺等醯胺類;甲苯、及二甲苯等芳香族烴類。這些有機溶劑可單獨使用1種或適當混合2種以上來使用。The organic solvent is not particularly limited as long as it can dissolve or disperse the aforementioned components ideally and does not impair the effects of the present invention. Examples of organic solvents include: alcohols such as methanol, ethanol, and propanol; ketones such as acetone, methyl ethyl ketone (hereinafter sometimes abbreviated as "MEK"), and methyl isobutyl ketone; dimethyl acetamide, and Amines such as dimethylformamide; aromatic hydrocarbons such as toluene and xylene. These organic solvents can be used individually by 1 type or by mixing 2 or more types appropriately.

[設有樹脂組成物層之半導體晶片及設有樹脂組成物層之半導體晶片搭載用基板] 本實施形態之薄膜狀底部填充材可理想地用來作為半導體晶片、半導體晶片搭載用基板之底部填充材。 [Semiconductor chip provided with a resin composition layer and semiconductor chip mounting substrate provided with a resin composition layer] The film-like underfill material of this embodiment can be ideally used as an underfill material for semiconductor wafers and semiconductor wafer mounting substrates.

例如,設有樹脂組成物層之半導體晶片具備半導體晶片、及疊層於該半導體晶片之含有樹脂組成物層的層。又,設有樹脂組成物層之半導體晶片搭載用基板具備半導體晶片搭載用基板、及疊層於該半導體晶片搭載用基板之含有樹脂組成物層的層。For example, a semiconductor wafer provided with a resin composition layer includes a semiconductor wafer and a layer including a resin composition layer laminated on the semiconductor wafer. Furthermore, a semiconductor wafer mounting substrate provided with a resin composition layer includes a semiconductor wafer mounting substrate and a layer containing a resin composition layer laminated on the semiconductor wafer mounting substrate.

在本實施形態之設有樹脂組成物層之半導體晶片之製造方法中,可使用上述本實施形態之薄膜狀底部填充材來製造設有樹脂組成物層之半導體晶片。製作設有樹脂組成物層之半導體晶片的方法並無特別限制,例如於半導體晶圓之形成有電極的面亦即和基板實施接合的面,以面向本實施形態之薄膜狀底部填充材的樹脂組成物層的方式進行貼合,然後將薄膜狀底部填充材的基材薄膜剝離,其後實施利用切片鋸等所為之單片化,藉此可獲得設有樹脂組成物層之半導體晶片。又,本實施形態之設有樹脂組成物層之半導體晶片搭載用基板之製造方法中可使用本實施形態之薄膜狀底部填充材來製造設有樹脂組成物層之半導體晶片搭載用基板。製作設有樹脂組成物層之半導體晶片搭載用基板的方法並無特別限制,例如可藉由於半導體晶片搭載用基板之晶片搭載側的面,以面向本實施形態之薄膜狀底部填充材之樹脂組成物層的方式進行貼合,然後將薄膜狀底部填充材之基材薄膜剝離而獲得。In the method of manufacturing a semiconductor wafer provided with a resin composition layer of this embodiment, the film-like underfill material of this embodiment described above can be used to manufacture a semiconductor wafer provided with a resin composition layer. The method of producing a semiconductor wafer provided with a resin composition layer is not particularly limited. For example, the surface of the semiconductor wafer on which electrodes are formed, that is, the surface bonded to the substrate, faces the resin of the film-like underfill material of this embodiment. The semiconductor wafer provided with the resin composition layer can be obtained by laminating the wafer in the form of a composition layer, peeling off the base film of the film-like underfill material, and then singulating it using a dicing saw or the like. Furthermore, in the method of manufacturing a semiconductor wafer mounting substrate provided with a resin composition layer of this embodiment, the film-like underfill material of this embodiment can be used to manufacture a semiconductor wafer mounting substrate provided with a resin composition layer. The method of producing the semiconductor wafer mounting substrate provided with the resin composition layer is not particularly limited. For example, the resin composition of the film-like underfill material of the present embodiment may be applied to the surface of the semiconductor wafer mounting substrate facing the wafer mounting side. It is obtained by laminating the film-like underfill material in layers, and then peeling off the base film of the film-like underfill material.

將本實施形態之薄膜狀底部填充材貼合於半導體晶圓或半導體晶片搭載用基板之方法並無特別限制,可理想地使用真空加壓式層合機。此時,宜為藉由橡膠等彈性體對於本實施形態之薄膜狀底部填充材進行加壓並貼合之方法。層合條件若為發明所屬技術領域中具有通常知識者通常使用的條件,則無特別限制,例如於50~140℃之溫度、1~11kgf/cm 2之範圍的接觸壓力、以及20hPa以下之環境減壓下實施。層合步驟之後也可利用金屬板所為之熱壓製來實施已貼合之薄膜狀底部填充材的平滑化。層合步驟及平滑化步驟可利用市售的真空加壓式層合機連續地實施。貼附於半導體晶圓或半導體搭晶片載用基板之薄膜狀底部填充材,於任一情況皆會在晶片之覆晶安裝前實施基材薄膜的去除。 The method of laminating the film-like underfill material of this embodiment to a semiconductor wafer or a semiconductor wafer mounting substrate is not particularly limited, and a vacuum pressure laminator can be ideally used. At this time, it is preferable to use a method of pressing and bonding the film-like underfill material of this embodiment with an elastic body such as rubber. Lamination conditions are not particularly limited if they are conditions commonly used by those with ordinary knowledge in the technical field to which the invention belongs, such as a temperature of 50 to 140°C, a contact pressure in the range of 1 to 11 kgf/cm 2 , and an environment below 20 hPa. Implemented under reduced pressure. After the lamination step, the laminated film-like underfill material can also be smoothed by hot pressing with a metal plate. The lamination step and the smoothing step can be performed continuously using a commercially available vacuum pressure laminator. The film-like underfill material attached to the semiconductor wafer or the semiconductor wafer mounting substrate will be removed from the base film before flip-chip mounting of the chip in either case.

[半導體裝置] 可使用上述設有樹脂組成物層之半導體晶片及/或設有樹脂組成物層之半導體晶片搭載用基板來構成半導體裝置。換言之,本實施形態之半導體裝置之製造方法中,可使用本實施形態之薄膜狀底部填充材來製造半導體裝置。具體而言,半導體裝置具備設有樹脂組成物層之半導體晶片及/或設有樹脂組成物層之半導體晶片搭載用基板。製造半導體裝置的方法並無特別限制,可列舉例如:將設有樹脂組成物層之半導體晶片搭載於半導體晶片搭載用基板之方法。又,也可於設有樹脂組成物層之半導體晶片搭載用基板搭載半導體晶片。將設有樹脂組成物層之半導體晶片搭載於半導體晶片搭載用基板之方法、及將半導體晶片搭載於設有樹脂組成物層之半導體晶片搭載用基板之方法,可理想地使用對應於熱壓接工法之覆晶接合器。又,本實施形態中,係簡單說明將半導體晶片覆晶安裝於半導體晶片搭載用基板的情況,惟也可令將半導體晶片予以覆晶安裝同時使用樹脂組成物層的對象為半導體晶片搭載用基板以外。例如,樹脂組成物層也可使用於在將半導體晶片搭載到半導體晶圓上時的半導體晶圓與半導體晶片之接合部、或經由TSV(Through Silicon Via)等來實施半導體晶片間連接之晶片疊層體中的各半導體晶片間之接合部,任一情況皆可獲得本實施形態之效果。 [實施例] [Semiconductor device] A semiconductor device can be constructed using the semiconductor wafer provided with the resin composition layer and/or the semiconductor wafer mounting substrate provided with the resin composition layer. In other words, in the method of manufacturing a semiconductor device of this embodiment, the semiconductor device can be manufactured using the film-like underfill material of this embodiment. Specifically, the semiconductor device includes a semiconductor wafer provided with a resin composition layer and/or a semiconductor wafer mounting substrate provided with a resin composition layer. The method of manufacturing a semiconductor device is not particularly limited, and an example thereof is a method of mounting a semiconductor wafer provided with a resin composition layer on a semiconductor wafer mounting substrate. Furthermore, the semiconductor wafer may be mounted on a semiconductor wafer mounting substrate provided with a resin composition layer. The method of mounting a semiconductor wafer provided with a resin composition layer on a semiconductor wafer mounting substrate and the method of mounting a semiconductor wafer on a semiconductor wafer mounting substrate provided with a resin composition layer can be ideally used for thermocompression bonding. Construction method of flip chip bonder. In addition, in this embodiment, the case where the semiconductor wafer is flip-chip mounted on the semiconductor wafer mounting substrate is simply explained. However, the semiconductor wafer may be flip-chip mounted and the resin composition layer may be used as the semiconductor wafer mounting substrate. outside. For example, the resin composition layer can be used in a joint between semiconductor wafers when the semiconductor wafer is mounted on the semiconductor wafer, or in a wafer stack in which semiconductor wafers are connected via TSV (Through Silicon Via) or the like. The effects of this embodiment can be obtained in any case at the joint between the semiconductor wafers in the layer. [Example]

以下,使用實施例及比較例更具體地說明本實施形態。本實施形態不受下列實施例任何限定。Hereinafter, this embodiment will be described more specifically using Examples and Comparative Examples. This embodiment is not limited at all by the following examples.

[實施例1] (樹脂組成物(清漆)之製備) 將作為熱硬化性樹脂(A)之雙馬來醯亞胺化合物(長鏈馬來醯亞胺;MIZ-001(商品名),日本化藥(股),含有式(9)表示之馬來醯亞胺化合物,且為式(9)中之a係1~6(整數)的混合物)70質量份、雙-(3-乙基-5-甲基-4-馬來醯亞胺基苯基)甲烷(伸苯基型馬來醯亞胺;BMI-70(商品名),K・I化成(股))10質量份; 作為可見光吸收劑(B)之黑色染料(Kayaset Black A-N(商品名,日本化藥(股))0.1質量份;, 作為無機填充材(C)之漿體二氧化矽(YA050C-MJM(商品名),Admatechs(股),苯基胺基矽烷處理二氧化矽,固體成分50質量%,分散介質:MEK,平均粒徑:50nm)180質量份(以非揮發成分換算為90質量份); 作為助熔劑活性劑(D)之氫化松香酯(PINECRYSTAL(註冊商標);KR-140(商品名),荒川化學工業(股))25質量份; 作為硬化觸媒(E)之係為有機過氧化物之α,α’-二(過氧化三級丁基)二異丙苯(PERBUTYL (註冊商標)P,日本油脂(股),10小時半衰期溫度:119.20℃)0.05質量份、及係為咪唑化合物之2-乙基-4-甲基咪唑(2E4MZ,四國化成工業(股))1質量份; 作為硬化劑(F)之胺基三𠯤酚醛清漆樹脂(PHENOLITE(註冊商標);LA-1356(商品名,DIC(股))33.3質量份(以非揮發成分換算為20質量份)進行混合,並於60℃之熱水浴中使用高速攪拌裝置攪拌40分鐘,另外添加MEK而獲得固體成分濃度為60質量%之清漆(樹脂組成物)。 另外,作為胺基三𠯤酚醛清漆樹脂之LA-1356(商品名,DIC(股))係上述式(1)表示之化合物(為式(1)表示之化合物的混合物,且該混合物中包含R 1各自獨立地為氫原子或甲基,l、m、n各自獨立地為1~6之整數,(l+m+n)為3~18之整數的化合物群)、及式(2)表示之化合物(為式(2)表示之化合物的混合物,且該混合物中包含R 2各自獨立地為氫原子或甲基,o、p、q、r、及s各自獨立地為1~4之整數,(o+p+q+r+s)為5~20之整數的化合物群)之混合物,且混合物中,式(1)表示之化合物(混合物)與式(2)表示之化合物(混合物)之質量比(式(1):式(2))為65(質量份):35(質量份)。 [Example 1] (Preparation of resin composition (varnish)) A bismaleimide compound (long-chain maleimide; MIZ-001 (trade name), Japan) as the thermosetting resin (A) Chemical medicine (stock), containing maleimide compound represented by formula (9), and is a mixture of a in formula (9) 1 to 6 (integer)) 70 parts by mass, bis-(3-ethyl) -5-Methyl-4-maleimidophenyl)methane (phenylene-type maleimide; BMI-70 (trade name), K・I Chemical Co., Ltd.) 10 parts by mass; as 0.1 part by mass of black dye (Kayaset Black AN (trade name, Nippon Kayaku Co., Ltd.)) as the visible light absorber (B); slurry silica (YA050C-MJM (trade name) as the inorganic filler (C) , Admatechs (Co., Ltd.), phenylaminosilane-treated silica, solid content 50% by mass, dispersion medium: MEK, average particle size: 50nm) 180 parts by mass (converted to 90 parts by mass based on non-volatile content); as an assistant The flux activator (D) is hydrogenated rosin ester (PINECRYSTAL (registered trademark); KR-140 (trade name), Arakawa Chemical Industry Co., Ltd.) 25 parts by mass; the hardening catalyst (E) is an organic peroxide 0.05 parts by mass of α,α'-bis(peroxytertiary butyl)diisopropylbenzene (PERBUTYL (registered trademark) P, Nippon Oils & Fats Co., Ltd., 10-hour half-life temperature: 119.20°C), and is an imidazole compound 1 part by mass of 2-ethyl-4-methylimidazole (2E4MZ, Shikoku Chemical Industry Co., Ltd.); As the hardener (F), amino tris-phenolic varnish resin (PHENOLITE (registered trademark); LA-1356 (Trade name, DIC Co., Ltd.) 33.3 parts by mass (20 parts by mass in terms of non-volatile content) were mixed and stirred using a high-speed stirrer in a hot water bath at 60° C. for 40 minutes. MEK was also added to obtain a solid content. A varnish (resin composition) with a concentration of 60% by mass. In addition, LA-1356 (trade name, DIC Co., Ltd.), which is an amino tris-novolac varnish resin, is a compound represented by the above formula (1) (formula (1) ) represents a mixture of compounds, and the mixture contains R 1 each independently a hydrogen atom or a methyl group, l, m, n each independently an integer from 1 to 6, (l+m+n) from 3 to 18 (an integer compound group), and the compound represented by formula (2) (which is a mixture of compounds represented by formula (2), and the mixture contains R 2 each independently a hydrogen atom or a methyl group, o, p, q, A mixture of compounds in which r, and s are each independently an integer from 1 to 4, and (o+p+q+r+s) is an integer from 5 to 20), and in the mixture, the compound represented by formula (1) ( The mass ratio (formula (1): formula (2)) to the compound (mixture) represented by formula (2) is 65 (parts by mass): 35 (parts by mass).

(薄膜狀底部填充材之製作) 將得到的清漆(樹脂組成物)塗佈於表面塗層有脫模劑之厚度38μm之聚對苯二甲酸乙二酯薄膜(基材薄膜;脫模劑的厚度0.1μm,TR1-38(商品名,UNITIKA(股))),於1大氣壓下,以100℃加熱乾燥5分鐘,獲得厚度為16.5μm之樹脂組成物層已形成於基材薄膜上之薄膜狀底部填充材。另外,就樹脂組成物層的厚度而言,係使用測微計(MDH-25M,Mitutoyo Corporation(股)製)測定薄膜狀底部填充材的厚度,並從薄膜狀底部填充材的厚度扣除基材薄膜的厚度而求得。 (Production of film-like underfill material) The obtained varnish (resin composition) was coated on a 38 μm-thick polyethylene terephthalate film (base film; release agent thickness: 0.1 μm, TR1-38 (commercial product) with a release agent on the surface. Named UNITIKA (Co., Ltd.)), heated and dried at 100°C for 5 minutes under 1 atmosphere to obtain a film-like underfill material with a resin composition layer with a thickness of 16.5 μm formed on the base film. In addition, regarding the thickness of the resin composition layer, the thickness of the film-like underfill material was measured using a micrometer (MDH-25M, manufactured by Mitutoyo Corporation), and the base material was deducted from the thickness of the film-like underfill material. The thickness of the film is obtained.

[實施例2] 在“薄膜狀底部填充材之製作”中,將樹脂組成物層的厚度設為43μm,除此之外,和實施例1同樣地進行,獲得薄膜狀底部填充材。 [Example 2] In "Preparation of Film-like Underfill Material", except that the thickness of the resin composition layer was set to 43 μm, the same procedure as in Example 1 was performed to obtain a film-like underfill material.

[實施例3] 在“樹脂組成物(清漆)之製備”中,將黑色染料的使用量變更為0.3質量份,且在“薄膜狀底部填充材之製作”中,將樹脂組成物層的厚度設為16.0μm,除此之外,和實施例1同樣地進行,獲得薄膜狀底部填充材。 [Example 3] In "Preparation of resin composition (varnish)", the usage amount of the black dye was changed to 0.3 parts by mass, and in "Preparation of film-like underfill material", the thickness of the resin composition layer was set to 16.0 μm. Except for this, the same procedure as in Example 1 was carried out to obtain a film-like underfill material.

[實施例4] 在“薄膜狀底部填充材之製作”中,將樹脂組成物層的厚度設為35μm,除此之外,和實施例3同樣地進行,獲得薄膜狀底部填充材。 [Example 4] In "Preparation of Film-like Underfill Material", except that the thickness of the resin composition layer was set to 35 μm, the same procedure as in Example 3 was performed to obtain a film-like underfill material.

[實施例5] 在“樹脂組成物(清漆)之製備”中,將黑色染料的使用量變更為0.5質量份,且在薄膜狀底部填充材之製作中,將樹脂組成物層的厚度設為17.0μm,除此之外,和實施例1同樣地進行,獲得薄膜狀底部填充材。 [Example 5] In "Preparation of resin composition (varnish)", the usage amount of the black dye was changed to 0.5 parts by mass, and in the preparation of the film-like underfill material, the thickness of the resin composition layer was set to 17.0 μm. Except for this, the same procedure as in Example 1 was carried out to obtain a film-like underfill material.

[實施例6] 在“薄膜狀底部填充材之製作”中,將樹脂組成物層的厚度設為30μm,除此之外,和實施例5同樣地進行,獲得薄膜狀底部填充材。 [Example 6] In "Preparation of Film-like Underfill Material", except that the thickness of the resin composition layer was set to 30 μm, the same procedure as in Example 5 was performed to obtain a film-like underfill material.

[實施例7] 在“樹脂組成物(清漆)之製備”中,將黑色染料的使用量變更為0.7質量份,且在“薄膜狀底部填充材之製作”中,將樹脂組成物層的厚度設為17.0μm,除此之外,和實施例1同樣地進行,獲得薄膜狀底部填充材。 [Example 7] In "Preparation of resin composition (varnish)", the usage amount of the black dye was changed to 0.7 parts by mass, and in "Preparation of film-like underfill material", the thickness of the resin composition layer was set to 17.0 μm. Except for this, the same procedure as in Example 1 was carried out to obtain a film-like underfill material.

[實施例8] 在“薄膜狀底部填充材之製作”中,將樹脂組成物層的厚度設為33μm,除此之外,和實施例7同樣地進行,獲得薄膜狀底部填充材。 [Example 8] In "Preparation of Film-like Underfill Material", except that the thickness of the resin composition layer was set to 33 μm, the same procedure as in Example 7 was performed to obtain a film-like underfill material.

[實施例9] 在“樹脂組成物(清漆)之製備”中,將黑色染料的使用量變更為1.0質量份,且在“薄膜狀底部填充材之製作”中,將樹脂組成物層的厚度設為17.0μm,除此之外,和實施例1同樣地進行,獲得薄膜狀底部填充材。 [Example 9] In "Preparation of resin composition (varnish)", the usage amount of the black dye was changed to 1.0 parts by mass, and in "Preparation of film-like underfill material", the thickness of the resin composition layer was set to 17.0 μm. Except for this, the same procedure as in Example 1 was carried out to obtain a film-like underfill material.

[實施例10] 在“薄膜狀底部填充材之製作”中,將樹脂組成物層的厚度設為33μm,除此之外,和實施例9同樣地進行,獲得薄膜狀底部填充材。 [Example 10] In "Preparation of Film-like Underfill Material", except that the thickness of the resin composition layer was set to 33 μm, the same procedure as in Example 9 was performed to obtain a film-like underfill material.

[實施例11] 在“樹脂組成物(清漆)之製備”中,將黑色染料的使用量變更為2.0質量份,且在薄膜狀底部填充材之製作中,將樹脂組成物層的厚度設為18.0μm,除此之外,和實施例1同樣地進行,獲得薄膜狀底部填充材。 [Example 11] In "Preparation of resin composition (varnish)", the usage amount of the black dye was changed to 2.0 parts by mass, and in the preparation of the film-like underfill material, the thickness of the resin composition layer was set to 18.0 μm. Except for this, the same procedure as in Example 1 was carried out to obtain a film-like underfill material.

[比較例1] 在“薄膜狀底部填充材之製作”中,將樹脂組成物層的厚度設為41μm,除此之外,和實施例11同樣地進行,獲得薄膜狀底部填充材。 [Comparative example 1] In "Preparation of Film-like Underfill Material", except that the thickness of the resin composition layer was set to 41 μm, the same procedure as in Example 11 was performed to obtain a film-like underfill material.

[比較例2] 在“樹脂組成物(清漆)之製備”中,不使用黑色染料,且在“薄膜狀底部填充材之製作”中,將樹脂組成物層的厚度設為13.0μm,除此之外,和實施例1同樣地進行,獲得薄膜狀底部填充材。 [Comparative example 2] In "Preparation of resin composition (varnish)", no black dye is used, and in "Preparation of film-like underfill material", the thickness of the resin composition layer is set to 13.0 μm. In addition, the following procedures are carried out: The same procedure as in Example 1 was performed to obtain a film-like underfill material.

[比較例3] 在“樹脂組成物(清漆)之製備”中,不使用黑色染料,且將作為無機填充材(C)之漿體二氧化矽(YA050C-MJM)替換成使用漿體二氧化矽(甲基丙烯酸表面處理二氧化矽;5SM-CM2(商品名),Admatechs(股)製,固體成分70質量%,分散介質:MEK,平均粒徑:500nm)128.6質量份(以非揮發成分換算為90質量份),且在“薄膜狀底部填充材之製作”中,將樹脂組成物層的厚度設為38μm,除此之外,和實施例1同樣地進行,獲得薄膜狀底部填充材。 [Comparative example 3] In "Preparation of resin composition (varnish)", black dye is not used, and slurry silica (YA050C-MJM) as the inorganic filler (C) is replaced with slurry silica (methacrylic acid). Surface-treated silica; 5SM-CM2 (trade name), manufactured by Admatechs Co., Ltd., solid content 70% by mass, dispersion medium: MEK, average particle size: 500nm) 128.6 parts by mass (converted to 90 parts by mass based on non-volatile content) ), and in "Preparation of Film-like Underfill Material", except that the thickness of the resin composition layer was set to 38 μm, the same procedure as in Example 1 was performed to obtain a film-like underfill material.

[比較例4] 在“樹脂組成物(清漆)之製備”中,不使用黑色染料,且將作為無機填充材(C)之漿體二氧化矽(YA050C-MJM)的使用量變更為90質量份(以非揮發成分換算為45質量份),再添加漿體二氧化矽(甲基丙烯酸表面處理二氧化矽;5SM-CM2)64.3質量份(以非揮發成分換算為45質量份),且在“薄膜狀底部填充材之製作”中,將樹脂組成物層的厚度設為35μm,除此之外,和實施例1同樣地進行,獲得薄膜狀底部填充材。 [Comparative example 4] In "Preparation of resin composition (varnish)", no black dye is used, and the usage amount of slurry silica (YA050C-MJM) as the inorganic filler (C) is changed to 90 parts by mass (in terms of non-volatile Components converted to 45 parts by mass), then 64.3 parts by mass of slurry silica (methacrylic acid surface-treated silica; 5SM-CM2) (converted to 45 parts by mass as non-volatile components), and placed on the "film-like bottom" In "Preparation of Filling Material", except that the thickness of the resin composition layer was set to 35 μm, the same procedure as in Example 1 was performed to obtain a film-like underfill material.

《評價》 (1)透射率 (於600nm的光線透射率之測定) 將各實施例及比較例得到的薄膜狀底部填充材切出寬度5cm×長度5cm,製得樣本A。以分光比色計(SD6000(商品名),日本分光(股)製)於室溫下測定該樣本A於600nm的光線透射率,並令“薄膜狀底部填充材於波長600nm的光線透射率”為T 0。 同樣地針對使用了各實施例及比較例之基材薄膜,切出寬度5cm×長度5cm,製得樣本B。以分光比色計(SD6000(商品名),日本分光(股)製)於室溫下測定該樣本B於600nm的光線透射率,並令“基材薄膜於波長600nm的光線透射率”為T 1<Evaluation> (1) Transmittance (Measurement of light transmittance at 600 nm) The film-like underfill material obtained in each Example and Comparative Example was cut into pieces with a width of 5 cm and a length of 5 cm to prepare a sample A. Use a spectrophotometer (SD6000 (trade name), manufactured by JASCO Co., Ltd.) to measure the light transmittance of sample A at 600 nm at room temperature, and determine the "light transmittance of the film-like underfill material at a wavelength of 600 nm" is T 0 . Similarly, the base film using each of the Examples and Comparative Examples was cut out with a width of 5 cm and a length of 5 cm to prepare a sample B. Use a spectrophotometer (SD6000 (trade name), manufactured by JASCO Corporation) to measure the light transmittance of sample B at 600 nm at room temperature, and let the "light transmittance of the base film at a wavelength of 600 nm" be T 1 .

(底部填充材的光線透射率與基材薄膜的光線透射率之差) 利用各實施例及比較例,算出基材薄膜於波長600nm的光線透射率[T 1]與底部填充材於波長600nm的光線透射率[T 0]之差、及|T 1-T 0|。另外,計算結果未達0之數值在表中仍維持標記負號來顯示,惟這些值係以其絕對值作為基準進行判斷。 (The difference between the light transmittance of the underfill material and the light transmittance of the base film) Using each example and the comparative example, calculate the light transmittance [T 1 ] of the base film at a wavelength of 600 nm and the light transmittance of the underfill material at a wavelength of 600 nm. The difference in light transmittance [T 0 ], and |T 1 -T 0 |. In addition, values that do not reach 0 are still marked with a negative sign in the table, but these values are judged based on their absolute values.

(校準標記辨認性) 將各實施例及比較例得到的薄膜狀底部填充材貼附於具有校準標記之半導體晶片搭載用基板(WALTS(股)製,WALTS-KIT CC80(W)-0105JY(商品名)),並從樹脂組成物層將基材薄膜剝離,自樹脂組成物層側利用覆晶接合器(LFB-2301(商品名),新川(股))搭載的攝像機觀察前述基板上的校準標記,依循如下基準針對校準標記之辨認性進行評價。 〈基準〉 A:可辨認校準標記。 C:無法辨認校準標記。 (Calibration mark legibility) The film-like underfill material obtained in each Example and Comparative Example was attached to a semiconductor wafer mounting substrate (manufactured by WALTS Co., Ltd., WALTS-KIT CC80(W)-0105JY (trade name)) with calibration marks, and was removed from The resin composition layer peels off the base film, and uses a camera mounted on a flip-chip bonder (LFB-2301 (trade name), Shinkawa Co., Ltd.) to observe the calibration marks on the substrate from the resin composition layer side according to the following standards. The legibility of the calibration marks is evaluated. 〈Benchmark〉 A: Calibration marks are identifiable. C: Calibration marks cannot be recognized.

(NCF可辨識性) 以目視觀察各實施例及比較例得到的薄膜狀底部填充材,確認薄膜狀底部填充材之正面或是背面哪個為樹脂組成物層(NCF),並依循如下基準針對NCF可辨識性進行評價。 〈基準〉 A:可輕易(未達3秒)辨認樹脂組成物層(NCF)面。 B:樹脂組成物層(NCF)面的辨認需要3秒以上。 C:樹脂組成物層(NCF)面的辨認困難。 (NCF identifiability) The film-like underfill materials obtained in each of the Examples and Comparative Examples were visually observed to confirm whether the front or back side of the film-like underfill material was the resin composition layer (NCF), and the NCF visibility was evaluated based on the following criteria. 〈Benchmark〉 A: The resin composition layer (NCF) surface can be easily identified (less than 3 seconds). B: It takes more than 3 seconds to identify the resin composition layer (NCF) surface. C: It is difficult to identify the resin composition layer (NCF) surface.

(2)清漆保存安定性 將各實施例及比較例得到的清漆(樹脂組成物)於密閉容器內在25℃放置1週後,以目視確認容器底是否有沉降物。觀察到沉降物時,僅將沉降物分離提取並測定沉降物的質量,利用下式求得經過1週後之無機填充材沉降率,依循如下基準評價清漆保存安定性。 無機填充材沉降率=沉降物之質量/無機填充材非揮發成分摻合量×100 〈基準〉 A:以目視觀察時,無法觀察到沉降物。 B:以目視可確認沉降物,但無機填充材沉降率未達5%。 C:無機填充材沉降率為5%以上。 (2) Storage stability of varnish The varnish (resin composition) obtained in each Example and Comparative Example was placed in a sealed container at 25° C. for 1 week, and then it was visually confirmed whether there was sedimentation at the bottom of the container. When sedimentation is observed, only the sedimentation is extracted and the mass of the sedimentation is measured. The sedimentation rate of the inorganic filler after one week is calculated using the following formula. The storage stability of the varnish is evaluated according to the following standards. Inorganic filler sedimentation rate = mass of sedimentation/inorganic filler non-volatile component blending amount × 100 〈Benchmark〉 A: When observed visually, sedimentation cannot be observed. B: The sedimentation can be confirmed visually, but the sedimentation rate of the inorganic filler material does not reach 5%. C: The sedimentation rate of inorganic filler is more than 5%.

[表1] [產業上利用性] [Table 1] [Industrial applicability]

本實施形態之薄膜狀底部填充材由於操作性優良且可輕易且正確地配置於晶圓等對象上,故可理想地使用作為設有樹脂組成物層之半導體晶片、設有樹脂組成物層之半導體晶片搭載用基板、及半導體裝置、以及它們的製造方法之材料。Since the film-like underfill material of this embodiment has excellent workability and can be easily and accurately placed on an object such as a wafer, it can be ideally used as a semiconductor wafer provided with a resin composition layer or a semiconductor wafer provided with a resin composition layer. Materials for semiconductor wafer mounting substrates, semiconductor devices, and their manufacturing methods.

2021年10月15日提申之日本國專利申請案2021-169233號的揭示內容及2022年2月24日提申之日本國專利申請案2022-26833號的揭示內容,係將其整體援引於本說明書中作為參照。 又,說明書所記載之全部的文獻、專利申請案、及技術標準,係和藉由援引個別文獻、專利申請案、及技術標準作為參照而具體且個別記載時相同程度地援引於本說明書中作為參照。 The disclosure content of Japanese Patent Application No. 2021-169233 filed on October 15, 2021 and the disclosure content of Japanese Patent Application No. 2022-26833 filed on February 24, 2022 are cited in their entirety. used as a reference in this manual. Furthermore, all documents, patent applications, and technical standards described in the specification are incorporated into this specification to the same extent as if the individual documents, patent applications, and technical standards were specifically and individually described by reference. Reference.

Claims (23)

一種薄膜狀底部填充材,含有: 包含熱硬化性樹脂(A)及可見光吸收劑(B)之樹脂組成物層,及 基材薄膜; 該薄膜狀底部填充材於波長600nm的光線透射率為20~90%,且 該基材薄膜於波長600nm的光線透射率與該薄膜狀底部填充材於波長600nm的光線透射率之差為2~80%。 A film-like underfill material containing: A resin composition layer including a thermosetting resin (A) and a visible light absorber (B), and base film; The film-like underfill material has a light transmittance of 20~90% at a wavelength of 600nm, and The difference between the light transmittance of the base film at a wavelength of 600 nm and the light transmittance of the film-like underfill material at a wavelength of 600 nm is 2 to 80%. 如請求項1之薄膜狀底部填充材,其中,該樹脂組成物層的厚度為5~500μm之範圍。The film-like underfill material of claim 1, wherein the thickness of the resin composition layer is in the range of 5 to 500 μm. 如請求項1或2之薄膜狀底部填充材,其中,該可見光吸收劑(B)為選自有機染料、有機顏料、及它們的組合之群組中之至少1種。The film-like underfill material of claim 1 or 2, wherein the visible light absorber (B) is at least one selected from the group consisting of organic dyes, organic pigments, and combinations thereof. 如請求項1或2之薄膜狀底部填充材,其中,該可見光吸收劑(B)包含選自醌系、胺基酮系、陽離子系、花青系、酞菁系、喹吖酮系、二芳基/三芳基甲烷系、俘精酸酐(fulgide)、偶氮系、方酸菁(squarylium)系、氧雜菁(oxonol)系、亞苄基系、硝基系、亞硝基系、噻唑系、靛(indigoid)系、及它們的組合之群組中之至少1種之化合物。The film-like underfill material of claim 1 or 2, wherein the visible light absorber (B) includes a quinone series, an amino ketone series, a cationic series, a cyanine series, a phthalocyanine series, a quinacridone series, and a quinacridone series. Aryl/triarylmethane series, fulgide, azo series, squarylium series, oxonol series, benzylidene series, nitro series, nitroso series, thiazole At least one compound from the group consisting of indigoid series, indigo series, and combinations thereof. 如請求項1或2之薄膜狀底部填充材,其中,該可見光吸收劑(B)包含選自醌系、胺基酮系、及它們的組合之群組中之至少1種之化合物。The film-like underfill material of claim 1 or 2, wherein the visible light absorber (B) contains at least one compound selected from the group consisting of quinones, aminoketones, and combinations thereof. 如請求項1或2之薄膜狀底部填充材,其中,該熱硬化性樹脂(A)包含選自馬來醯亞胺化合物、檸康醯亞胺化合物、及它們的組合之群組中之至少1種。The film-like underfill material of claim 1 or 2, wherein the thermosetting resin (A) contains at least one selected from the group consisting of maleimide compounds, citraconide imine compounds, and combinations thereof. 1 species. 如請求項6之薄膜狀底部填充材,其中,該馬來醯亞胺化合物包含選自2,2’-雙{4-(4-馬來醯亞胺基苯氧基)苯基}丙烷、1,2-雙(馬來醯亞胺基)乙烷、1,4-雙(馬來醯亞胺基)丁烷、1,6-雙(馬來醯亞胺基)己烷、N,N’-1,3-伸苯基二馬來醯亞胺、N,N’-1,4-伸苯基二馬來醯亞胺、N-苯基馬來醯亞胺、下式(3)表示之馬來醯亞胺化合物、含有下式(4)表示之構成單元以及在兩末端含有馬來醯亞胺基之雙馬來醯亞胺化合物、下式(5)表示之馬來醯亞胺化合物、下式(6)表示之馬來醯亞胺化合物、下式(7)表示之馬來醯亞胺化合物、及它們的組合之群組中之至少1種; 式(3)中,n3表示1~30之整數; 式(4)中,R 11表示碳數1~16之直鏈狀或分支狀之伸烷基、或碳數2~16之直鏈狀或分支狀之伸烯基;R 12表示碳數1~16之直鏈狀或分支狀之伸烷基、或碳數2~16之直鏈狀或分支狀之伸烯基;R 13各自獨立地表示氫原子、碳數1~16之直鏈狀或分支狀之烷基、或碳數2~16之直鏈狀或分支狀之烯基;n 5表示1~10之整數; 式(5)中,R 8各自獨立地表示氫原子、甲基、或乙基;R 9各自獨立地表示氫原子或甲基; 式(6)中,R 10各自獨立地表示氫原子、碳數1~5之烷基、或苯基;n4表示1~10之整數; 式(7)中,R 10各自獨立地表示氫原子或甲基,n2表示1以上之整數。 The film-like underfill material of claim 6, wherein the maleimide compound includes 2,2'-bis{4-(4-maleiminophenoxy)phenyl}propane, 1,2-bis(maleimino)ethane, 1,4-bis(maleimino)butane, 1,6-bis(maleimino)hexane, N, N'-1,3-phenylene dimaleimide, N,N'-1,4-phenylene dimaleimide, N-phenyl maleimide, the following formula (3 ), a maleimide compound represented by the following formula (4), a bismaleimine compound containing a maleimide group at both ends, and a maleimide compound represented by the following formula (5) At least one of the group consisting of an imine compound, a maleimine compound represented by the following formula (6), a maleimine compound represented by the following formula (7), and a combination thereof; In formula (3), n3 represents an integer from 1 to 30; In the formula (4), R 11 represents a linear or branched alkylene group having 1 to 16 carbon atoms, or a linear or branched alkylene group having 2 to 16 carbon atoms; R 12 represents a carbon number 1 ~16 linear or branched alkylene groups, or linear or branched alkenyl groups with 2 to 16 carbon atoms; R 13 each independently represents a hydrogen atom, or a linear or branched alkylene group with 1 to 16 carbon atoms Or a branched alkyl group, or a linear or branched alkenyl group with 2 to 16 carbon atoms; n 5 represents an integer from 1 to 10; In formula (5), R 8 each independently represents a hydrogen atom, a methyl group, or an ethyl group; R 9 each independently represents a hydrogen atom or a methyl group; In formula (6), R 10 each independently represents a hydrogen atom, an alkyl group with 1 to 5 carbon atoms, or a phenyl group; n4 represents an integer from 1 to 10; In formula (7), R 10 each independently represents a hydrogen atom or a methyl group, and n2 represents an integer of 1 or more. 如請求項7之薄膜狀底部填充材,其中,該馬來醯亞胺化合物包含選自2,2’-雙{4-(4-馬來醯亞胺基苯氧基)苯基}丙烷、該式(3)表示之馬來醯亞胺化合物、含有該式(4)表示之構成單元及在兩末端含有馬來醯亞胺基之雙馬來醯亞胺化合物、該式(5)表示之馬來醯亞胺化合物、該式(6)表示之馬來醯亞胺化合物、該式(7)表示之馬來醯亞胺化合物、及它們的組合之群組中之至少1種。The film-like underfill material of claim 7, wherein the maleimide compound includes 2,2'-bis{4-(4-maleiminophenoxy)phenyl}propane, The maleimide compound represented by the formula (3), a bismaleimine compound containing the structural unit represented by the formula (4) and maleimide groups at both ends, and the bismaleimine compound represented by the formula (5) At least one of the group consisting of a maleimine compound, a maleimine compound represented by the formula (6), a maleimine compound represented by the formula (7), and a combination thereof. 如請求項1或2之薄膜狀底部填充材,更含有無機填充材(C)。For example, the film-like underfill material of claim 1 or 2 further contains an inorganic filler material (C). 如請求項9之薄膜狀底部填充材,其中,該無機填充材(C)的平均粒徑為400nm以下。The film-like underfill material of claim 9, wherein the average particle size of the inorganic filler (C) is 400 nm or less. 如請求項9之薄膜狀底部填充材,其中,該無機填充材(C)包含選自二氧化矽、氫氧化鋁、氧化鋁、軟水鋁石(boehmite)、氮化硼、氮化鋁、氧化鎂、氫氧化鎂、及它們的組合之群組中之至少1種。The film-like underfill material of claim 9, wherein the inorganic filler material (C) includes silicon dioxide, aluminum hydroxide, aluminum oxide, boehmite, boron nitride, aluminum nitride, oxide, etc. At least one kind from the group consisting of magnesium, magnesium hydroxide, and combinations thereof. 如請求項9之薄膜狀底部填充材,其中,該無機填充材(C)的含量相對於該熱硬化性樹脂(A)之總量100質量份,為10~500質量份。The film-like underfill material of claim 9, wherein the content of the inorganic filler (C) is 10 to 500 parts by mass relative to 100 parts by mass of the total amount of the thermosetting resin (A). 如請求項9之薄膜狀底部填充材,其中,該無機填充材(C)的平均粒徑為400nm以下, 該無機填充材(C)包含選自二氧化矽、氫氧化鋁、氧化鋁、軟水鋁石、氮化硼、氮化鋁、氧化鎂、氫氧化鎂、及它們的組合之群組中之至少1種, 該無機填充材(C)的含量相對於該熱硬化性樹脂(A)之總量100質量份,為10~500質量份。 The film-like underfill material of claim 9, wherein the average particle size of the inorganic filler (C) is 400 nm or less, The inorganic filler (C) includes at least one selected from the group consisting of silica, aluminum hydroxide, aluminum oxide, boehmite, boron nitride, aluminum nitride, magnesium oxide, magnesium hydroxide, and combinations thereof. 1 species, The content of the inorganic filler (C) is 10 to 500 parts by mass relative to 100 parts by mass of the total amount of the thermosetting resin (A). 如請求項1或2之薄膜狀底部填充材,更含有助熔劑活性劑(D)。For example, the film-like underfill material of claim 1 or 2 further contains a flux activator (D). 如請求項14之薄膜狀底部填充材,其中,該助熔劑活性劑(D)包含松香系樹脂。The film-like underfill material of Claim 14, wherein the flux activator (D) contains a rosin-based resin. 如請求項1或2之薄膜狀底部填充材,更含有硬化觸媒(E)。For example, the film-like underfill material of claim 1 or 2 further contains a hardening catalyst (E). 如請求項16之薄膜狀底部填充材,其中,該硬化觸媒(E)包含選自有機過氧化物、咪唑化合物、及它們的組合之群組中之至少1種。The film-like underfill material of claim 16, wherein the hardening catalyst (E) includes at least one selected from the group consisting of organic peroxides, imidazole compounds, and combinations thereof. 如請求項1或2之薄膜狀底部填充材,更含有硬化劑(F)。For example, the film-like underfill material of claim 1 or 2 further contains a hardener (F). 如請求項18之薄膜狀底部填充材,其中,該硬化劑(F)包含胺基三𠯤酚醛清漆樹脂。The film-like underfill material of claim 18, wherein the hardener (F) includes an amino tri-novolak resin. 一種薄膜狀底部填充材用樹脂組成物,含有: 熱硬化性樹脂(A),及 可見光吸收劑(B)。 A resin composition for film-like underfill materials, containing: thermosetting resin (A), and Visible light absorber (B). 一種設有樹脂組成物層之半導體晶片之製造方法,係使用如請求項1至19中任一項之薄膜狀底部填充材。A method of manufacturing a semiconductor wafer provided with a resin composition layer using the film-like underfill material according to any one of claims 1 to 19. 一種設有樹脂組成物層之半導體晶片搭載用基板之製造方法,係使用如請求項1至19中任一項之薄膜狀底部填充材。A method of manufacturing a substrate for mounting a semiconductor chip provided with a resin composition layer, using the film-like underfill material according to any one of claims 1 to 19. 一種半導體裝置之製造方法,係使用如請求項1至19中任一項之薄膜狀底部填充材。A method of manufacturing a semiconductor device using the film-like underfill material according to any one of claims 1 to 19.
TW111138413A 2021-10-15 2022-10-11 Film-like underfill material, resin composition for film-like underfill material, method for preparing semiconductor chip with resin composition layer using film-like underfill material, method for preparing mounting board for semiconductor chip with resin composition layer, and method of manufacturing semiconductor device TW202334294A (en)

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