TW202324521A - Manufacturing method of device chips capable of suppressing hardening of resin layer - Google Patents

Manufacturing method of device chips capable of suppressing hardening of resin layer Download PDF

Info

Publication number
TW202324521A
TW202324521A TW111145201A TW111145201A TW202324521A TW 202324521 A TW202324521 A TW 202324521A TW 111145201 A TW111145201 A TW 111145201A TW 111145201 A TW111145201 A TW 111145201A TW 202324521 A TW202324521 A TW 202324521A
Authority
TW
Taiwan
Prior art keywords
workpiece
resin layer
manufacturing
cutting
wafer
Prior art date
Application number
TW111145201A
Other languages
Chinese (zh)
Inventor
小川雄輝
渡部晃司
橋本一輝
青柳元
小林正和
Original Assignee
日商迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW202324521A publication Critical patent/TW202324521A/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing

Abstract

The present invention provides a manufacturing method of device chips, which may suppress the hardening of resin layer as compared to that in the conventional method. The manufacturing method of device chips according to the present invention is to divide along predetermined scribe lines for a plate-like workpiece configured with devices in the area on the front side divided by the predetermined scribe lines, so as to manufacture the device chips comprising devices. The manufacturing method of device chip includes: a resin layer forming step for forming a resin layer containing resin in a non-hardening or semi-hardening state on the front side of workpiece; and, a workpiece cutting step for cutting the workpiece along predetermined scribe lines after the resin layer forming step on the back side of the workpiece that is configured with the resin layer on the front side, so as to manufacture the device chip.

Description

元件晶片的製造方法Manufacturing method of element wafer

本發明係關於一種元件晶片的製造方法，其將正面側設置有元件之板狀的被加工物進行分割而製造元件晶片。The present invention relates to a method of manufacturing an element wafer, which divides a plate-shaped workpiece on which an element is provided on the front side to manufacture an element wafer.

在以攜帶式電話、個人電腦為代表之電子設備中，具備包含電子電路等之元件之元件晶片成為必要的構成要素。元件晶片例如係藉由下述方式獲得：以被稱為切割道之分割預定線將由矽（Si）等半導體而成之晶圓的正面側劃分成多個區域，在各區域形成元件後，沿著此分割預定線而分割晶圓。In electronic equipment typified by mobile phones and personal computers, element chips including elements such as electronic circuits are essential components. An element wafer is obtained, for example, by dividing the front side of a wafer made of a semiconductor such as silicon (Si) into a plurality of regions with predetermined dividing lines called dicing lines, and forming elements in each region along the The wafer is divided along the planned dividing line.

在將晶圓分割成元件晶片時，典型上，使用將被稱為切割刀片之環狀的工具裝設於主軸而成之切削裝置。使切割刀片高速地旋轉，一邊供給純水等液體一邊沿著分割預定線從正面側切入晶圓，藉此將晶圓進行切削加工，並分割成多個元件晶片。When dividing a wafer into element chips, typically, a cutting device in which a ring-shaped tool called a dicing blade is mounted on a spindle is used. The dicing blade is rotated at high speed, and while liquid such as pure water is supplied, the wafer is cut into the wafer from the front side along the dividing line, thereby cutting the wafer and dividing it into a plurality of element wafers.

有時亦會藉由雷射加工裝置而將晶圓分割成元件晶片，所述雷射加工裝置具備可生成會被晶圓吸收之波長的雷射光束之雷射振盪器。在此情形中，將由雷射振盪器所生成之雷射光束從晶圓的正面側照射至分割預定線，藉此將晶圓進行燒蝕加工，並分割成多個元件晶片。In some cases, the wafer is also divided into element chips by a laser processing device equipped with a laser oscillator capable of generating a laser beam of a wavelength absorbed by the wafer. In this case, a laser beam generated by a laser oscillator is irradiated from the front side of the wafer to the dividing line, whereby the wafer is ablated and divided into a plurality of element wafers.

然而，為了將由如上述般的方法所得之元件晶片固定於其他元件晶片或基板，有時會將被稱為非導電膜（NCF，Non Conductive Film）、晶粒附接膜（DAF，Die Attach Film）等之接著用的樹脂層設於各元件晶片的正面側（例如參考專利文獻1）。However, in order to fix the element wafer obtained by the above-mentioned method to other element wafers or substrates, it is sometimes called a non-conductive film (NCF, Non Conductive Film), a die attach film (DAF, Die Attach Film) ) and the like followed by a resin layer are provided on the front side of each element wafer (for example, refer to Patent Document 1).

在此情形中，例如在將晶圓分割成多個元件晶片前，在晶圓的正面側設置尺寸可覆蓋晶圓的正面整體之樹脂層。其後，藉由將樹脂層連同晶圓一起分割，而能獲得在正面側具備接著用的樹脂層之多個元件晶片。 [習知技術文獻] [專利文獻] In this case, for example, before dividing the wafer into a plurality of element chips, a resin layer having a size capable of covering the entire front surface of the wafer is provided on the front side of the wafer. Thereafter, by dividing the resin layer together with the wafer, a plurality of element wafers having a resin layer for bonding on the front side can be obtained. [Prior art literature] [Patent Document]

專利文獻1：日本特開2016-92188號公報Patent Document 1: Japanese Patent Laid-Open No. 2016-92188

[發明所欲解決的課題] 上述之接著用的樹脂層係以藉由在將元件晶片往對象進行固定時所施加之壓力而適當地變形之方式，在未完全硬化的狀態（未硬化或半硬化的狀態）下被設置於晶圓。然而，若以迄今為止的方法將晶圓進行加工並分割成元件晶片，則有時會因在此加工時所產生之熱而使樹脂層硬化，變得無法適當地對於對象固定元件晶片。 [Problems to be Solved by the Invention] The above-mentioned adhesive resin layer is provided in an incompletely cured state (uncured or semi-cured state) in such a manner that it is properly deformed by the pressure applied when fixing the device wafer to the target. wafer. However, when the wafer is processed and divided into element wafers by the conventional method, the resin layer may be hardened by the heat generated during the processing, and the element wafer cannot be properly fixed to the object.

因此，本發明之目的在於提供一種元件晶片的製造方法，其相較於習知方法，可抑制樹脂層的硬化。Therefore, an object of the present invention is to provide a method for manufacturing an element wafer, which can suppress hardening of a resin layer compared with conventional methods.

[解決課題的技術手段] 根據本發明的一態樣，提供一種元件晶片的製造方法，其將在由分割預定線所劃分之正面側的區域設置有元件之板狀的被加工物以該分割預定線進行分割，藉此製造包含該元件之元件晶片，所述元件晶片的製造方法包含：樹脂層形成步驟，其在該被加工物的該正面側形成包含未硬化或半硬化的狀態的樹脂之樹脂層；以及被加工物切斷步驟，其在該樹脂層形成步驟後，從在該正面側設置有該樹脂層之該被加工物的背面側沿著該分割預定線切斷該被加工物，藉此製造該元件晶片。 [Technical means to solve the problem] According to one aspect of the present invention, there is provided a method of manufacturing an element wafer, which divides a plate-shaped workpiece with elements provided in a region on the front side divided by the planned dividing line along the planned dividing line, thereby Manufacturing an element wafer including the element, the manufacturing method of the element wafer includes: a resin layer forming step of forming a resin layer including a resin in an uncured or semi-hardened state on the front side of the workpiece; and an object cutting step of, after the resin layer forming step, cutting the object from the rear side of the object provided with the resin layer on the front side along the dividing line, thereby manufacturing the element wafer.

較佳為，在該被加工物切斷步驟後，進一步包含：樹脂層分割步驟，其藉由對該樹脂層施加外力，而根據該元件晶片分割該樹脂層。例如，在該樹脂層形成步驟後且該樹脂層分割步驟前，進一步包含：膠膜貼附步驟，其在該被加工物的該正面側貼附具有擴張性之膠膜，在該樹脂層分割步驟中，藉由擴張該膠膜而對該樹脂層施加外力並分割該樹脂層。或者，在該被加工物切斷步驟後且該樹脂層分割步驟前，進一步包含：膠膜貼附步驟，其在該被加工物的該背面側貼附具有擴張性之膠膜，在該樹脂層分割步驟中，藉由擴張該膠膜而對該樹脂層施加外力並分割該樹脂層。Preferably, after the workpiece cutting step, the method further includes: a resin layer dividing step of dividing the resin layer according to the element wafer by applying an external force to the resin layer. For example, after the step of forming the resin layer and before the step of dividing the resin layer, it further includes: a step of sticking an adhesive film on the front side of the workpiece, and attaching an expandable adhesive film on the front side of the workpiece, and dividing the resin layer. In the step, an external force is applied to the resin layer and the resin layer is divided by expanding the adhesive film. Alternatively, after the step of cutting the workpiece and before the step of dividing the resin layer, it further includes: a step of attaching an adhesive film to the back side of the workpiece, attaching an expandable adhesive film on the resin layer In the layer dividing step, an external force is applied to the resin layer by expanding the adhesive film and the resin layer is divided.

並且，較佳為，在該被加工物切斷步驟前，進一步包含：保護膜形成步驟，其在該被加工物的該背面側形成保護膜。Furthermore, it is preferable that, before the step of cutting the workpiece, a protective film forming step of forming a protective film on the back side of the workpiece is further included.

並且，較佳為，在該被加工物切斷步驟中，將會被該被加工物吸收之波長的雷射光束沿著該分割預定線照射至該被加工物，藉此切斷該被加工物。並且，較佳為，在該被加工物切斷步驟後，進一步包含：電漿蝕刻步驟，其從該被加工物的該背面側供給電漿狀態的蝕刻氣體，藉此去除殘留於該元件晶片之加工應變或碎屑。Also, preferably, in the step of cutting the processed object, a laser beam of a wavelength to be absorbed by the processed object is irradiated to the processed object along the dividing line, thereby cutting the processed object. thing. And, preferably, after the workpiece cutting step, it further includes: a plasma etching step of supplying etching gas in a plasma state from the back side of the workpiece, thereby removing residues remaining on the element wafer. Processing strain or debris.

並且，較佳為，該被加工物切斷步驟包含：槽形成步驟，其將會被該被加工物吸收之波長的雷射光束沿著該分割預定線照射至該被加工物，藉此形成在該被加工物的該背面開口之槽；以及電漿蝕刻步驟，其在該槽形成步驟後，從該被加工物的該背面側供給電漿狀態的蝕刻氣體，藉此去除該被加工物的該正面與該槽的底部之間的部分而切斷該被加工物。And, preferably, the workpiece cutting step includes: a groove forming step of irradiating the workpiece with a laser beam of a wavelength absorbed by the workpiece along the planned division line, thereby forming A groove opened on the back surface of the workpiece; and a plasma etching step of supplying an etching gas in a plasma state from the rear surface side of the workpiece after the groove forming step, thereby removing the workpiece The part between the front surface and the bottom of the groove cuts off the workpiece.

並且，較佳為，在該被加工物切斷步驟前，進一步包含：遮罩層形成步驟，其在該被加工物形成遮罩層，所述遮罩層覆蓋該被加工物的該背面側的與該元件對應之區域，並且，在該被加工物切斷步驟中，從形成有該遮罩層之該被加工物的該背面側供給電漿狀態的蝕刻氣體，藉此去除該被加工物的從該遮罩層露出之部分而切斷該被加工物。And, preferably, before the step of cutting the workpiece, further comprising: a mask layer forming step of forming a mask layer on the workpiece, the mask layer covering the back side of the workpiece and, in the workpiece cutting step, an etching gas in a plasma state is supplied from the back side of the workpiece on which the mask layer is formed, thereby removing the workpiece The part of the object exposed from the mask layer is cut to cut the object to be processed.

[發明功效] 在本發明的一態樣之元件晶片的製造方法中，因在被加工物的正面側形成包含未硬化或半硬化的狀態的樹脂之樹脂層後，從被加工物的背面側將被加工物沿著分割預定線進行切斷，故相較於將被加工物從正面側進行切斷之情形，熱不易傳遞至設置於正面側之樹脂層。因此，若根據本發明的一態樣之元件晶片的製造方法，則相較於習知方法，可抑制樹脂層的硬化。 [Efficacy of the invention] In the method for manufacturing an element wafer according to one aspect of the present invention, after forming a resin layer containing resin in an uncured or semi-hardened state on the front side of the workpiece, the workpiece is removed from the back side of the workpiece. Since the cutting is performed along the planned dividing line, heat is less likely to be transferred to the resin layer provided on the front side than when the workpiece is cut from the front side. Therefore, according to the manufacturing method of the element wafer of one aspect of this invention, hardening of a resin layer can be suppressed compared with a conventional method.

以下，一邊參考圖式一邊針對本發明的實施方式進行說明。Embodiments of the present invention will be described below with reference to the drawings.

（第一實施方式） 圖1係表示在本實施方式之元件晶片的製造方法中所使用之被加工物11之立體圖。被加工物11例如為以矽等半導體材料所構成之圓盤狀的晶圓。此被加工物11具有：圓形狀的正面11a；以及與正面11a為相反側的圓形狀的背面11b。被加工物11的正面11a側被互相交叉之多條切割道（分割預定線）13劃分成多個小區域，在各小區域中形成有包含積體電路（IC，Integrated Circuit）等之元件15。 (first embodiment) FIG. 1 is a perspective view showing a workpiece 11 used in the method of manufacturing an element wafer according to this embodiment. The workpiece 11 is, for example, a disk-shaped wafer made of semiconductor materials such as silicon. This workpiece 11 has a circular front surface 11 a and a circular rear surface 11 b opposite to the front surface 11 a. The front surface 11a side of the workpiece 11 is divided into a plurality of small areas by a plurality of dicing lines (planned dividing lines) 13 intersecting each other, and components 15 including integrated circuits (IC, Integrated Circuit) etc. are formed in each small area .

此外，在本實施方式中，雖將以矽等半導體材料所構成之圓盤狀的晶圓作為被加工物11，但被加工物11的材質、形狀、構造、大小等並無限制。例如，亦可將以其他半導體、陶瓷、樹脂、金屬等材料所構成之基板等使用作為被加工物11。同樣地，元件15的種類、數量、形狀、構造、大小、配置等亦無限制。In addition, in this embodiment, although a disk-shaped wafer made of semiconductor material such as silicon is used as the workpiece 11, the material, shape, structure, size, etc. of the workpiece 11 are not limited. For example, a substrate or the like made of other materials such as semiconductors, ceramics, resins, and metals can also be used as the workpiece 11 . Likewise, the type, number, shape, structure, size, arrangement, etc. of the elements 15 are not limited.

在本實施方式之元件晶片的製造方法中，首先，在被加工物11的正面11a側形成樹脂層21（樹脂層形成步驟）。樹脂層21典型上為非導電膜（NCF，Non Conductive Film）、晶粒附接膜（DAF，Die Attach Film）等，並包含未硬化或半硬化的狀態的樹脂。此樹脂層21具有預定的接著力，並被使用作為在將分割被加工物11所得之元件晶片往其他基板等安裝時的底膠材。In the manufacturing method of the element wafer of this embodiment, first, the resin layer 21 is formed on the front surface 11 a side of the workpiece 11 (resin layer forming step). The resin layer 21 is typically a non-conductive film (NCF, Non Conductive Film), a die attach film (DAF, Die Attach Film), etc., and contains resin in an uncured or semi-cured state. This resin layer 21 has a predetermined adhesive force and is used as a primer when mounting the element wafer obtained by dividing the workpiece 11 on another substrate or the like.

如圖1所示，樹脂層21係具有與被加工物11大致相同的直徑之圓盤狀的薄膜，並以覆蓋正面11a的大致整體之方式貼附於被加工物11。但是，樹脂層21的種類等並無限制。例如，亦可藉由將非導電膠（NCP，Non Conductive Paste）等塗布於被加工物11的正面11a側而形成樹脂層21。As shown in FIG. 1 , the resin layer 21 is a disk-shaped film having substantially the same diameter as the workpiece 11 , and is attached to the workpiece 11 so as to cover substantially the entire front surface 11 a. However, the type and the like of the resin layer 21 are not limited. For example, the resin layer 21 may also be formed by applying non-conductive paste (NCP, Non Conductive Paste) etc. on the front surface 11 a side of the workpiece 11 .

再者，構成樹脂層21之材料等亦無限制。例如，樹脂層21能使用以環氧系樹脂、丙烯酸系樹脂、胺基甲酸乙酯系樹脂、矽氧系樹脂、聚醯亞胺系樹脂等作為主成分之樹脂。再者，樹脂層21中亦可添加氧化劑、填料等。In addition, the material etc. which comprise the resin layer 21 are not limited. For example, the resin layer 21 can use a resin mainly composed of epoxy resin, acrylic resin, urethane resin, silicone resin, polyimide resin, or the like. Furthermore, an oxidizing agent, a filler, and the like may also be added to the resin layer 21 .

在將包含未硬化或半硬化的狀態的樹脂之樹脂層21形成於被加工物11的正面11a側後，在此被加工物11的正面11a側貼附具有擴張性之膠膜（膠膜貼附步驟）。圖2係表示已貼附具有擴張性之膠膜23之被加工物11之立體圖。After the resin layer 21 comprising resin in an uncured or semi-cured state is formed on the front 11a side of the workpiece 11, an expandable adhesive film (adhesive film sticker) is attached to the front 11a side of the workpiece 11. attached steps). FIG. 2 is a perspective view of the workpiece 11 to which the expandable adhesive film 23 has been attached.

膠膜23例如包含直徑大於被加工物11之圓形狀的底膜（基材）與設置於底膜之黏著層（糊層）。底膜典型上係由聚烯烴、聚氯乙烯等樹脂所構成，並具有擴張性。The adhesive film 23 includes, for example, a circular bottom film (substrate) whose diameter is larger than that of the workpiece 11 and an adhesive layer (paste layer) disposed on the bottom film. The bottom film is typically made of polyolefin, polyvinyl chloride and other resins, and has expansibility.

黏著層典型上係由以環氧系樹脂、丙烯酸系樹脂、胺基甲酸乙酯系樹脂、矽氧系樹脂、聚醯亞胺系樹脂、橡膠系樹脂等作為主成分之樹脂所構成，並具有對於被加工物11之黏著性。此外，黏著層亦可由會因照射紫外線而硬化之紫外線硬化型的樹脂等所構成。The adhesive layer is typically composed of epoxy resins, acrylic resins, urethane resins, silicone resins, polyimide resins, rubber resins, etc. as the main components, and has Adhesion to the workpiece 11. In addition, the adhesive layer may be formed of ultraviolet curable resin or the like which is cured by irradiation of ultraviolet rays.

如圖2所示，膠膜23例如被貼附於被加工物11與以包圍被加工物11之方式所配置之環狀的框架25雙方。框架25係以不鏽鋼或鋁等金屬而被構成為環狀，並在中央具有直徑大於被加工物11之圓形狀的開口部25a。As shown in FIG. 2 , the adhesive film 23 is attached, for example, to both the workpiece 11 and the ring-shaped frame 25 disposed so as to surround the workpiece 11 . The frame 25 is made of metal such as stainless steel or aluminum in an annular shape, and has a circular opening 25 a having a diameter larger than that of the workpiece 11 in the center.

在被加工物11被配置於此框架25的開口部25a的內側之狀態下，將膠膜23貼附於被加工物11的正面11a側（樹脂層21）與框架25。藉此，被加工物11的正面11a側係透過樹脂層21與膠膜23而被支撐於框架25，提高被加工物11的處理容易度。With the workpiece 11 disposed inside the opening 25 a of the frame 25 , the adhesive film 23 is attached to the front 11 a side (resin layer 21 ) of the workpiece 11 and the frame 25 . Thereby, the front side 11 a of the workpiece 11 is supported by the frame 25 through the resin layer 21 and the adhesive film 23 , which improves the ease of handling of the workpiece 11 .

在將膠膜23貼附於被加工物11的正面11a側後，在被加工物11的背面11b側形成保護膜（保護膜形成步驟）。圖3係表示在被加工物11的背面11b側塗布保護膜的原料27之情況之剖面圖。在本實施方式中，例如使用圖3所示之旋轉塗布機2而在被加工物11塗布保護膜的原料27。After the adhesive film 23 is attached to the front surface 11 a side of the workpiece 11 , a protective film is formed on the rear surface 11 b side of the workpiece 11 (protective film forming step). FIG. 3 is a cross-sectional view showing a state in which a protective film raw material 27 is applied to the back surface 11 b side of the workpiece 11 . In this embodiment, for example, the raw material 27 of the protective film is applied to the workpiece 11 using the spin coater 2 shown in FIG. 3 .

旋轉塗布機2具備以可保持被加工物11之方式所構成之旋轉台4。旋轉台4的上表面（保持面）4a被構成為大致平坦，並例如與貼附於樹脂層21之膠膜23接觸。此上表面4a係透過設置於旋轉台4的內部之流路4b、閥（未圖示）等而與噴射器等吸引源連接（未圖示）。The spin coater 2 includes a rotary table 4 configured to hold a workpiece 11 . The upper surface (holding surface) 4 a of the turntable 4 is substantially flat, and is in contact with, for example, the adhesive film 23 attached to the resin layer 21 . This upper surface 4 a is connected to a suction source such as an ejector (not shown) through a flow path 4 b provided inside the turntable 4 , a valve (not shown), and the like.

在旋轉台4的下部連結有馬達等旋轉驅動源（未圖示），所述馬達等旋轉驅動源係使旋轉台4繞著通過上表面4a的中央且相對於鉛直方向（上下方向）呈大致平行的旋轉軸進行旋轉。又，在旋轉台4的周圍設有可握持並固定框架25之多個夾具6。在上表面4a的中央的上方配置有可滴落保護膜的原料27之噴嘴8。A rotational drive source (not shown) such as a motor is connected to the lower part of the turntable 4, and the rotational drive source such as a motor makes the turntable 4 go around and pass through the center of the upper surface 4a in a substantially vertical direction (up and down direction). Parallel to the axis of rotation for rotation. Also, a plurality of jigs 6 capable of holding and fixing the frame 25 are provided around the turntable 4 . Above the center of the upper surface 4a, the nozzle 8 capable of dripping the raw material 27 for the protective film is arranged.

在被加工物11的背面11b側形成保護膜時，首先，以使貼附於樹脂層21之膠膜23與上表面4a接觸之方式，亦即，以將背面11b側朝向上方之方式，將被加工物11載置於旋轉台4。若在此狀態下使藉由吸引源而產生之負壓（吸引力）作用於上表面4a，則膠膜23被吸附於上表面4a，被加工物11係透過膠膜23而被保持於旋轉台4。此外，框架25被多個夾具6固定。When forming a protective film on the back surface 11b side of the workpiece 11, first, the adhesive film 23 attached to the resin layer 21 is brought into contact with the upper surface 4a, that is, the back surface 11b side is turned upward, and the The workpiece 11 is placed on the turntable 4 . In this state, if the negative pressure (attractive force) generated by the suction source acts on the upper surface 4a, the adhesive film 23 is adsorbed on the upper surface 4a, and the workpiece 11 is held in rotation through the adhesive film 23. Taiwan 4. Furthermore, the frame 25 is fixed by a plurality of clamps 6 .

接著，從噴嘴8朝向被加工物11的背面11b的中央滴落保護膜的原料27，並使旋轉台4旋轉。藉此，保護膜的原料27從背面11b的中央朝向外側擴散，而被塗布於被加工物11的背面11b的整體。作為保護膜的原料27，例如使用以聚乙烯醇（PVA）、聚乙二醇（PEG）、聚氧化乙烯（PEO）、聚乙烯吡咯烷酮（PVP）等為代表之水溶性的樹脂。Next, the raw material 27 of the protective film is dropped from the nozzle 8 toward the center of the back surface 11 b of the workpiece 11 , and the turntable 4 is rotated. Thereby, the raw material 27 of the protective film spreads from the center of the back surface 11b toward the outside, and is applied to the entire back surface 11b of the workpiece 11 . As the raw material 27 of the protective film, for example, a water-soluble resin represented by polyvinyl alcohol (PVA), polyethylene glycol (PEG), polyethylene oxide (PEO), polyvinylpyrrolidone (PVP), or the like is used.

其後，使塗布於被加工物11之保護膜的原料27乾燥等，藉此形成覆蓋被加工物11的背面11b的整體之水溶性的保護膜。圖4係表示在背面11b側形成有保護膜29之被加工物11之剖面圖。此外，形成此保護膜29之方法並無具體限制。例如，亦可將由樹脂等所構成之膠膜貼附於被加工物11的背面11b側，將此使用作為保護膜29。Thereafter, the raw material 27 applied to the protective film of the workpiece 11 is dried to form a water-soluble protective film covering the entire back surface 11 b of the workpiece 11 . FIG. 4 is a cross-sectional view showing the workpiece 11 in which the protective film 29 is formed on the back surface 11b side. In addition, the method of forming the protective film 29 is not specifically limited. For example, an adhesive film made of resin or the like may be attached to the back surface 11 b side of the workpiece 11 and used as the protective film 29 .

在被加工物11的背面11b側形成有保護膜29後，從此背面11b側沿著切割道13切斷被加工物11，藉此製造分別具有元件15之多個元件晶片（被加工物切斷步驟）。在本實施方式中，將會被被加工物11吸收之波長的雷射光束沿著切割道13照射至被加工物11，藉此切斷被加工物11。After the protective film 29 is formed on the back surface 11b side of the workpiece 11, the workpiece 11 is cut along the dicing line 13 from the rear surface 11b side, thereby manufacturing a plurality of element wafers each having the elements 15 (cutting of the workpiece 11). step). In this embodiment, the laser beam of the wavelength to be absorbed by the workpiece 11 is irradiated to the workpiece 11 along the cutting line 13 , thereby cutting the workpiece 11 .

圖5係表示對被加工物11照射雷射光束31之情況之剖面圖。在本實施方式中，例如使用圖5所示之雷射加工裝置12而對被加工物11照射雷射光束31。此外，在以下的說明所使用之X軸方向（加工進給方向）、Y軸方向（分度進給方向）及Z軸方向（鉛直方向）為互相垂直的方向。FIG. 5 is a cross-sectional view showing a state where a laser beam 31 is irradiated to a workpiece 11 . In the present embodiment, for example, the workpiece 11 is irradiated with the laser beam 31 using the laser processing apparatus 12 shown in FIG. 5 . In addition, the X-axis direction (machining feed direction), the Y-axis direction (index feed direction), and the Z-axis direction (vertical direction) used in the following description are directions perpendicular to each other.

如圖5所示，雷射加工裝置12具備以可保持被加工物11之方式所構成之卡盤台14。卡盤台14的上表面（保持面）14a被構成為相對於X軸方向及Y軸方向呈大致平行且大致平坦，並例如與貼附於樹脂層21之膠膜23接觸。此上表面14a係透過設於卡盤台14的內部之流路14b、閥（未圖示）等而與噴射器等吸引源（未圖示）連接。As shown in FIG. 5 , the laser processing device 12 includes a chuck table 14 configured to hold the workpiece 11 . The upper surface (holding surface) 14 a of the chuck table 14 is formed substantially parallel to the X-axis direction and the Y-axis direction and is substantially flat, and is in contact with, for example, the adhesive film 23 attached to the resin layer 21 . This upper surface 14a is connected to a suction source (not shown) such as an ejector through a flow path 14b, a valve (not shown) and the like provided inside the chuck table 14 .

在卡盤台14的下部連結有馬達等旋轉驅動源（未圖示），所述馬達等旋轉驅動源係使卡盤台14繞著通過上表面14a的中央且相對於Z軸方向呈大致平行的旋轉軸進行旋轉。又，在卡盤台14的周圍設有可握持並固定框架25之多個夾具16。卡盤台14、旋轉驅動源及夾具16被滾珠螺桿式的移動機構支撐（未圖示），並藉由此移動機構而沿著X軸方向及Y軸方向移動。A rotary drive source (not shown) such as a motor is connected to the lower part of the chuck table 14, and the rotary drive source such as a motor makes the chuck table 14 pass through the center of the upper surface 14a and is approximately parallel to the Z-axis direction. The axis of rotation is rotated. Also, a plurality of jigs 16 capable of holding and fixing the frame 25 are provided around the chuck table 14 . The chuck table 14 , the rotational driving source, and the clamper 16 are supported by a ball screw type moving mechanism (not shown), and are moved in the X-axis direction and the Y-axis direction by the moving mechanism.

在卡盤台14的上方配置有雷射加工頭18，所述雷射加工頭18係將由雷射振盪器（未圖示）所生成之雷射光束31導往被卡盤台14保持之被加工物11。雷射振盪器例如具備適於雷射振盪之Nd：YAG等雷射介質，並以預定的重複頻率生成具有會被被加工物11吸收之波長之脈衝狀的雷射光束31。A laser processing head 18 is disposed above the chuck table 14, and the laser processing head 18 guides the laser beam 31 generated by a laser oscillator (not shown) to the laser beam 31 held by the chuck table 14. Processing 11. The laser oscillator includes, for example, a laser medium such as Nd:YAG suitable for laser oscillation, and generates a pulsed laser beam 31 having a wavelength absorbed by the workpiece 11 at a predetermined repetition rate.

雷射加工頭18具備將由雷射振盪器所放射之脈衝狀的雷射光束31導往被加工物11之反射鏡、透鏡等光學系統，並例如使雷射光束31聚光至卡盤台14的上方的預定位置。被加工物11係藉由從雷射加工頭18照射至被加工物11之雷射光束31而被雷射燒蝕加工。The laser processing head 18 is equipped with an optical system such as a reflector and a lens for guiding the pulsed laser beam 31 radiated from the laser oscillator to the workpiece 11, and condenses the laser beam 31 to the chuck table 14, for example. The predetermined position above the . The workpiece 11 is processed by laser ablation by irradiating the laser beam 31 from the laser processing head 18 to the workpiece 11 .

在以雷射光束31切斷被加工物11時，以使貼附於樹脂層21之膠膜23與上表面14a接觸之方式，亦即，以將背面11b側朝向上方之方式，將被加工物11載置於卡盤台14。若在此狀態下使藉由吸引源所產生之負壓（吸引力）作用於上表面14a，則膠膜23被吸引於上表面14a，被加工物11係透過膠膜23而被保持於卡盤台14。此外，框架25被多個夾具16固定。When cutting the workpiece 11 with the laser beam 31, the adhesive film 23 attached to the resin layer 21 is in contact with the upper surface 14a, that is, with the back surface 11b side facing upward, the workpiece is processed. The object 11 is placed on the chuck table 14 . In this state, if the negative pressure (attractive force) generated by the suction source acts on the upper surface 14a, the adhesive film 23 is attracted to the upper surface 14a, and the workpiece 11 is held on the card through the adhesive film 23. Plate table 14. Furthermore, the frame 25 is fixed by a plurality of clamps 16 .

接著，以使成為加工對象之切割道13的長度方向與X軸方向一致之方式，調整卡盤台14的繞著旋轉軸的方向。然後，以將雷射加工頭18定位於切割道13的延長線的上方（通過切割道13的寬度方向的中央之直線的上方）之方式，調整卡盤台14的Y軸方向的位置。又，以使雷射光束31聚光至適於被加工物11的加工之Z軸方向的位置之方式，調整雷射加工頭18的光學系統等。Next, the direction around the rotation axis of the chuck table 14 is adjusted so that the longitudinal direction of the scribe line 13 to be processed coincides with the X-axis direction. Then, the position of the chuck table 14 in the Y-axis direction is adjusted so that the laser machining head 18 is positioned above the extension line of the scribe line 13 (above a straight line passing through the center of the scribe line 13 in the width direction). In addition, the optical system of the laser processing head 18 and the like are adjusted so that the laser beam 31 is condensed to a position in the Z-axis direction suitable for processing the workpiece 11 .

其後，一邊從雷射加工頭18照射雷射光束31，一邊使卡盤台14沿著X軸方向以預定的速度（加工進給速度）移動。亦即，使保持於卡盤台14之被加工物11與雷射光束31的聚光點沿著X軸方向相對地移動。其結果，將雷射光束31從背面11b側沿著切割道13照射至被加工物11。Thereafter, while the laser beam 31 is irradiated from the laser processing head 18 , the chuck table 14 is moved at a predetermined speed (processing feed speed) along the X-axis direction. That is, the focusing point of the workpiece 11 held on the chuck table 14 and the laser beam 31 is relatively moved along the X-axis direction. As a result, the laser beam 31 is irradiated to the workpiece 11 along the scribe line 13 from the rear surface 11b side.

此外，照射雷射光束31時的條件係在可加工（雷射燒蝕加工）被加工物11之範圍內進行調整。例如，雷射光束31的波長被設定成266nm～1064nm，典型上被設定成355nm，重複頻率被設定成10kHz～1000kHz，典型上被設定成200kHz，平均輸出被設定成1W～20W，典型上被設定成2W，加工進給速度被設定成10mm／s～1000mm／s，典型上被設定成400mm／s。但是，照射雷射光束31時的具體條件並無限制。In addition, the conditions at the time of irradiating the laser beam 31 are adjusted within the range in which the workpiece 11 can be processed (laser ablation processing). For example, the wavelength of the laser beam 31 is set to 266nm to 1064nm, typically to 355nm, the repetition frequency is set to 10kHz to 1000kHz, typically to 200kHz, and the average output is set to 1W to 20W, typically by Set to 2W, the machining feed rate is set to 10mm/s~1000mm/s, typically it is set to 400mm/s. However, specific conditions for irradiating the laser beam 31 are not limited.

若沿著切割道13對被加工物11照射雷射光束31，則被加工物11的被照射到雷射光束31之部分係藉由雷射燒蝕而被去除，在被加工物11的背面11b側形成沿著切割道13之槽11c。在對象的切割道13形成槽11c後，以同樣的程序，對全部的切割道13形成槽11c。If the laser beam 31 is irradiated to the workpiece 11 along the cutting line 13, the part of the workpiece 11 irradiated with the laser beam 31 will be removed by laser ablation, and the back surface of the workpiece 11 will be removed. A groove 11c is formed along the scribe line 13 on the 11b side. After the groove 11c is formed on the target scribe line 13, the groove 11c is formed on all the scribe lines 13 in the same procedure.

在對全部的切割道13形成槽11c後，以使各槽11c加深之方式重複雷射光束31的照射。然後，最後被加工物11被切斷，而能獲得多個元件晶片。此外，對各切割道13照射雷射光束31之次數（道次（pass）數），例如在被加工物11的厚度為20μm～100μm左右的情形中，成為5次～20次（5道次～20道次）左右。After the grooves 11c are formed on all the scribe lines 13, the irradiation of the laser beam 31 is repeated so as to deepen the respective grooves 11c. Then, finally, the workpiece 11 is cut to obtain a plurality of element wafers. In addition, the number of times (number of passes) to irradiate the laser beam 31 to each scribe line 13 is, for example, 5 to 20 (5 passes) when the thickness of the workpiece 11 is about 20 μm to 100 μm. ~20 passes) or so.

但是，對各切割道13照射雷射光束31之次數（道次數）並無限制。在被加工物11充分薄的情形、雷射光束31的平均輸出充分高的情形等，亦有藉由一次的照射而切斷被加工物11之情況。圖6係表示被分割成元件晶片33後的被加工物11之剖面圖。However, the number of times (the number of passes) that the laser beam 31 is irradiated to each scribe line 13 is not limited. When the workpiece 11 is sufficiently thin, or when the average output of the laser beam 31 is sufficiently high, the workpiece 11 may be cut by one irradiation. FIG. 6 is a cross-sectional view showing the workpiece 11 after being divided into element wafers 33 .

若藉由如上述般的雷射燒蝕而加工被加工物11，則被加工物11的熔融物等會往周圍飛散，有成為碎屑而固定於背面11b之可能性。然而，在本實施方式中，因在被加工物11的背面11b側形成有保護膜29，故碎屑不易固定於被加工物11的背面11b等，而防止被加工物11及元件晶片33的汙染。When the workpiece 11 is processed by laser ablation as described above, the molten material of the workpiece 11 may scatter around and may become chips and be fixed on the back surface 11b. However, in this embodiment, since the protective film 29 is formed on the back surface 11b side of the workpiece 11, debris is not easily fixed to the back surface 11b of the workpiece 11, etc., and the workpiece 11 and the element wafer 33 are prevented pollute.

在切斷被加工物11而製造多個元件晶片33後，從被加工物11的背面11b側供給電漿狀態的蝕刻氣體，而去除殘留於各元件晶片33之加工應變或碎屑（電漿蝕刻步驟）。圖7係示意地表示對被加工物11供給電漿狀態的蝕刻氣體之情況之剖面圖。在本實施方式中，例如使用圖7所示之電漿處理裝置22而從背面11b側對被加工物11供給電漿狀態的蝕刻氣體。After cutting the workpiece 11 to manufacture a plurality of element wafers 33, an etching gas in a plasma state is supplied from the back surface 11b side of the workpiece 11 to remove processing strain or debris remaining on each element wafer 33 (plasma etching step). FIG. 7 is a cross-sectional view schematically showing a state in which an etching gas in a plasma state is supplied to the workpiece 11 . In this embodiment, for example, an etching gas in a plasma state is supplied to the workpiece 11 from the rear surface 11 b side using the plasma processing apparatus 22 shown in FIG. 7 .

電漿處理裝置22具備腔室24。在腔室24的內部設有處理空間，所述處理空間進行對被加工物11之電漿處理。在腔室24的側壁24a形成有開口部24b，所述開口部24b係在搬入及搬出被加工物11時供被加工物11、框架25通過。The plasma processing device 22 includes a chamber 24 . Inside the chamber 24 is provided a processing space for performing plasma processing on the workpiece 11 . The side wall 24a of the chamber 24 is formed with an opening 24b through which the workpiece 11 and the frame 25 pass when the workpiece 11 is carried in and out.

在側壁24a的外側配置有關閉開口部24b之蓋體26。又，在蓋體26連結有氣缸等開關機構28。藉由以開關機構28使蓋體26往下方移動並使開口部24b露出，而變得能將被加工物11往處理空間搬入以及能將被加工物11從處理空間搬出。又，藉由以開關機構28使蓋體26往上方移動並關閉開口部24b，而密閉處理空間。A cover 26 for closing the opening 24b is disposed outside the side wall 24a. Furthermore, a switch mechanism 28 such as an air cylinder is connected to the cover body 26 . By moving the lid body 26 downward by the switch mechanism 28 and exposing the opening 24b, the workpiece 11 can be carried into and taken out of the processing space. Furthermore, the processing space is sealed by moving the lid body 26 upward by the opening and closing mechanism 28 to close the opening 24b.

腔室24的底壁24c係透過配管30而連接有真空泵等減壓單元32。因此，例如若在以蓋體26關閉開口部24b且處理空間已密閉之狀態下使減壓單元32運作，則腔室24的處理空間會被排氣，此處理空間會被減壓。The bottom wall 24 c of the chamber 24 is connected to a decompression unit 32 such as a vacuum pump through a pipe 30 . Therefore, for example, if the decompression unit 32 is operated with the opening 24b closed by the lid 26 and the processing space is sealed, the processing space of the chamber 24 is exhausted and the processing space is decompressed.

在腔室24的內部設有台座34。台座34具備圓盤狀的保持部36與從下方支撐保持部36之圓柱狀的支撐部38。支撐部38的寬度（直徑）例如小於保持部36的寬度（直徑），支撐部38的上端係與保持部36的下端連結。A pedestal 34 is provided inside the chamber 24 . The pedestal 34 includes a disk-shaped holding portion 36 and a cylindrical support portion 38 that supports the holding portion 36 from below. The width (diameter) of the support portion 38 is smaller than the width (diameter) of the holding portion 36 , for example, and the upper end of the support portion 38 is connected to the lower end of the holding portion 36 .

在保持部36的上表面配置有可保持被加工物11之卡盤台40。卡盤台40具備：圓盤狀的絕緣部42，其係以絶緣體而成；以及多個電極44，其等已埋入絕緣部42的內部。多個電極44分別與可對電極44施加預定的直流電壓（例如5kV左右的高直流電壓）之直流電源46連接。A chuck table 40 capable of holding the workpiece 11 is arranged on the upper surface of the holding portion 36 . The chuck table 40 includes: a disc-shaped insulating portion 42 made of an insulator; and a plurality of electrodes 44 embedded in the insulating portion 42 . Each of the plurality of electrodes 44 is connected to a DC power source 46 capable of applying a predetermined DC voltage (for example, a high DC voltage of about 5 kV) to the electrodes 44 .

又，在卡盤台40的絕緣部42設有在此絕緣部42的上表面（亦即卡盤台40的上表面）開口之多條吸引路徑42a。吸引路徑42a係透過形成於台座34的內部之吸引路徑34a等而與吸引泵48連接。In addition, the insulating portion 42 of the chuck table 40 is provided with a plurality of suction paths 42 a opening on the upper surface of the insulating portion 42 (that is, the upper surface of the chuck table 40 ). The suction path 42 a is connected to the suction pump 48 through the suction path 34 a formed inside the pedestal 34 and the like.

例如，若將被加工物11等載置於卡盤台40上並使吸引泵48運作，則被加工物11等係藉由吸引泵48的吸引力而被吸引於卡盤台40的上表面。再者，若藉由直流電源46而對電極44施加直流電壓並在電極44間產生電位差，則被加工物11等係藉由作用於電極44與被加工物11之間之電力而被吸附於卡盤台40。因此，即使將腔室24的內部減壓，亦可藉由卡盤台40而保持被加工物11。For example, when the workpiece 11 and the like are placed on the chuck table 40 and the suction pump 48 is operated, the workpiece 11 and the like are attracted to the upper surface of the chuck table 40 by the suction force of the suction pump 48 . Furthermore, when a DC voltage is applied to the electrode 44 by the DC power supply 46 and a potential difference is generated between the electrodes 44, the workpiece 11 and the like are attracted to the electrode 44 and the workpiece 11 by the electric power acting between the electrode 44 and the workpiece 11. Chuck table 40. Therefore, even if the inside of the chamber 24 is decompressed, the workpiece 11 can be held by the chuck table 40 .

在台座34的內部形成有流路34b。流路34b的兩端係與循環單元50連接，所述循環單元50係使水等冷媒進行循環。若使循環單元50運作，則冷媒會從流路34b的一端朝向另一端流動而冷卻台座34。A flow path 34 b is formed inside the pedestal 34 . Both ends of the flow path 34b are connected to a circulation unit 50 that circulates a refrigerant such as water. When the circulation unit 50 is operated, the refrigerant flows from one end to the other end of the flow path 34 b to cool the pedestal 34 .

在腔室24的上部連接有供給蝕刻氣體之氣體供給單元52。氣體供給單元52被構成為在腔室24的外部使蝕刻氣體電漿化，並可將電漿狀態的蝕刻氣體供給至腔室24的處理空間。具體而言，氣體供給單元52具備供給管54，所述供給管54流通供給至腔室24之蝕刻氣體。A gas supply unit 52 for supplying etching gas is connected to the upper portion of the chamber 24 . The gas supply unit 52 is configured to plasmaize the etching gas outside the chamber 24 and supply the etching gas in a plasma state to the processing space of the chamber 24 . Specifically, the gas supply unit 52 includes a supply pipe 54 through which the etching gas supplied to the chamber 24 flows.

供給管54的一端側（下游側）係透過腔室24的上壁24d而與內部的處理空間連接。又，供給管54的另一端側（上游側）係透過閥56a、流量控制器58a、閥60a而與氣體供給源62a連接，且透過閥56b、流量控制器58b、閥60b而與氣體供給源62b連接，並透過閥56c、流量控制器58c、閥60c而與氣體供給源62c連接。One end side (downstream side) of the supply pipe 54 is connected to the internal processing space through the upper wall 24 d of the chamber 24 . Also, the other end side (upstream side) of the supply pipe 54 is connected to the gas supply source 62a through the valve 56a, the flow controller 58a, and the valve 60a, and is connected to the gas supply source through the valve 56b, the flow controller 58b, and the valve 60b. 62b, and connected to the gas supply source 62c through the valve 56c, the flow controller 58c, and the valve 60c.

若從氣體供給源62a、62b、62c分別以預定的流量供給預定的氣體，則此等氣體在供給管54混合，並成為蝕刻所使用之蝕刻氣體。例如，氣體供給源62a供給SF 6等氟系氣體，氣體供給源62b供給氧氣（O 2氣體），氣體供給源62c供給He等惰性氣體。但是，由氣體供給源62a、62b、62c所供給之氣體的成分、流量比等，能因應加工對象的材質、被要求之加工的品質等而任意地變更。 When predetermined gases are supplied at predetermined flow rates from the gas supply sources 62a, 62b, and 62c, these gases are mixed in the supply pipe 54 to become etching gases used for etching. For example, the gas supply source 62a supplies a fluorine-based gas such as SF 6 , the gas supply source 62b supplies oxygen (O 2 gas), and the gas supply source 62c supplies an inert gas such as He. However, the composition, flow ratio, and the like of the gas supplied from the gas supply sources 62a, 62b, and 62c can be changed arbitrarily according to the material of the processing object, the quality of the processing required, and the like.

氣體供給單元52具備對供給管54內的蝕刻氣體施加高頻電壓之電極64。電極64係以包圍供給管54的中游部之方式設置，並與高頻電源66連接。高頻電源66例如對電極64施加Vpp（Voltage peak to peak，峰至峰電壓）為0.5kV以上且5kV以下，頻率為450kHz以上且2.45GHz以下的高頻電壓。The gas supply unit 52 includes an electrode 64 for applying a high-frequency voltage to the etching gas in the supply pipe 54 . The electrode 64 is provided so as to surround the midstream portion of the supply pipe 54 and is connected to a high-frequency power source 66 . The high-frequency power supply 66 applies, for example, a high-frequency voltage with a Vpp (Voltage peak to peak) of 0.5 kV to 5 kV and a frequency of 450 kHz to 2.45 GHz to the electrode 64 .

若使用電極64及高頻電源66而對在供給管54流通之蝕刻氣體施加高頻電壓，則蝕刻氣體的一部分的分子會轉變成離子及自由基。然後，將包含此離子及自由基之電漿狀態的蝕刻氣體從在供給管54的下游端開口之供給口54a供給至腔室24的內部的處理空間。如此進行，已在腔室24的外部電漿化之蝕刻氣體被供給至腔室24的內部的處理空間。When a high-frequency voltage is applied to the etching gas flowing through the supply pipe 54 using the electrode 64 and the high-frequency power source 66, some molecules of the etching gas are converted into ions and radicals. Then, the plasma state etching gas containing the ions and radicals is supplied to the processing space inside the chamber 24 from the supply port 54 a opened at the downstream end of the supply pipe 54 . In this way, the etching gas plasmatized outside the chamber 24 is supplied to the processing space inside the chamber 24 .

在腔室24的上壁24d的內側的表面，以覆蓋供給口54a之方式安裝有使電漿狀態的蝕刻氣體分散（擴散）之分散構件68。從供給管54流入腔室24的內部之電漿狀態的蝕刻氣體係藉由此分散構件68而在卡盤台40的上方分散。On the inner surface of the upper wall 24 d of the chamber 24 , a dispersing member 68 for dispersing (diffusing) the etching gas in a plasma state is attached so as to cover the supply port 54 a. The plasma state etching gas system flowing into the chamber 24 from the supply pipe 54 is dispersed above the chuck table 40 by the dispersion member 68 .

在腔室24的側壁24a連接有配管70，在配管70連接有供給惰性氣體之氣體供給源（未圖示）。若從此氣體供給源通過配管70對腔室24供給惰性氣體，則腔室24的處理空間會被惰性氣體（內部氣體）填滿。此外，配管70亦可透過閥（未圖示）、流量控制器（未圖示）等而與氣體供給源62c連接。在此情形中，從氣體供給源62c通過配管70對腔室24供給惰性氣體。A pipe 70 is connected to the side wall 24 a of the chamber 24 , and a gas supply source (not shown) for supplying an inert gas is connected to the pipe 70 . When the inert gas is supplied to the chamber 24 through the pipe 70 from the gas supply source, the processing space of the chamber 24 is filled with the inert gas (internal gas). In addition, the piping 70 may be connected to the gas supply source 62c through a valve (not shown), a flow controller (not shown), or the like. In this case, an inert gas is supplied to the chamber 24 from the gas supply source 62c through the pipe 70 .

由氣體供給單元52所供給且在供給管54內經電漿化之蝕刻氣體係藉由設置於供給口54a的下方之分散構件68而被分散（擴散），並從上方被供給至被卡盤台40保持之被加工物11的整體。其結果，電漿狀態的蝕刻氣體對被加工物11作用，被加工物11被此蝕刻氣體加工（電漿蝕刻）。The etching gas system supplied from the gas supply unit 52 and plasmaized in the supply pipe 54 is dispersed (diffused) by the dispersion member 68 provided below the supply port 54a, and supplied to the chuck table from above. 40 holds the entirety of the workpiece 11 . As a result, the etching gas in the plasma state acts on the workpiece 11, and the workpiece 11 is processed by the etching gas (plasma etching).

在去除殘留於被加工物11（元件晶片33）之加工應變或碎屑時，首先，通過開口部24b將被加工物11搬入腔室24的處理空間，並載置於卡盤台40。於此，以使貼附於樹脂層21之膠膜23接觸卡盤台40的上表面之方式，亦即，以將背面11b側朝向上方之方式，將被加工物11載置於卡盤台40。When removing processing strain or debris remaining on the workpiece 11 (element wafer 33 ), first, the workpiece 11 is carried into the processing space of the chamber 24 through the opening 24 b and placed on the chuck table 40 . Here, the workpiece 11 is placed on the chuck table so that the adhesive film 23 attached to the resin layer 21 is in contact with the upper surface of the chuck table 40, that is, with the back surface 11b facing upward. 40.

接著，使吸引泵48運作。藉此，被加工物11等係藉由吸引泵48的吸引力而被吸引於卡盤台40的上表面。再者，藉由直流電源46而對電極44施加直流電壓。藉此，被加工物11等係藉由作用於電極44與被加工物11之間之電力而被吸附於卡盤台40。Next, the suction pump 48 is operated. Thereby, the workpiece 11 and the like are attracted to the upper surface of the chuck table 40 by the suction force of the suction pump 48 . Furthermore, a DC voltage is applied to the electrode 44 by the DC power supply 46 . Thereby, the workpiece 11 and the like are attracted to the chuck table 40 by the electric power acting between the electrode 44 and the workpiece 11 .

在被加工物11被卡盤台40保持後，從被加工物11的背面11b側將電漿狀態的蝕刻氣體供給至被加工物11。具體而言，首先，以開關機構28使蓋體26往上方移動而關閉開口部24b。藉此，腔室24的處理空間被密閉。After the workpiece 11 is held by the chuck table 40 , the etching gas in a plasma state is supplied to the workpiece 11 from the back surface 11 b side of the workpiece 11 . Specifically, first, the opening 24 b is closed by moving the lid body 26 upward by the switch mechanism 28 . Thereby, the processing space of the chamber 24 is sealed.

又，使減壓單元32運作而減壓腔室24的處理空間。此外，亦可通過配管70將適量的惰性氣體供給至腔室24的處理空間。在此狀態下，在供給管54流通蝕刻氣體，且使用電極64及高頻電源66對蝕刻氣體施加高頻電壓。Also, the decompression unit 32 is operated to decompress the processing space of the chamber 24 . In addition, an appropriate amount of inert gas may be supplied to the processing space of the chamber 24 through the pipe 70 . In this state, an etching gas is passed through the supply pipe 54 , and a high-frequency voltage is applied to the etching gas using the electrode 64 and the high-frequency power supply 66 .

藉此，將包含離子及自由基之電漿狀態的蝕刻氣體從供給口54a供給至下方的被加工物11。此外，因在被加工物11的背面11b側設置有保護膜29，故此保護膜29成為遮罩層，電漿狀態的蝕刻氣體幾乎未對被加工物11的背面11b作用，而主要作用於元件晶片33的側面（為槽11c的部分）。Thereby, the etching gas in a plasma state containing ions and radicals is supplied from the supply port 54 a to the workpiece 11 below. In addition, since the protective film 29 is provided on the back surface 11b side of the workpiece 11, the protective film 29 serves as a mask layer, and the etching gas in the plasma state hardly acts on the rear surface 11b of the workpiece 11, but mainly acts on the elements. The side surface of the wafer 33 (part of the groove 11c).

若電漿狀態的蝕刻氣體作用於元件晶片33的側面，則例如會去除因雷射光束31的照射等而在元件晶片33的側面及其周邊產生之加工應變。又，例如會去除因雷射光束31的照射等而附著於元件晶片33的側面及其周邊之碎屑（異物）。藉此，抑制元件晶片33的抗彎強度的降低及品質的降低。When the etching gas in the plasma state acts on the side surface of the element wafer 33, for example, the processing strain generated on the side surface and the periphery of the element wafer 33 due to the irradiation of the laser beam 31 or the like is removed. In addition, for example, debris (foreign matter) adhering to the side surface and the periphery of the element wafer 33 due to irradiation of the laser beam 31 or the like is removed. Thereby, the fall of the bending strength of the element wafer 33, and the fall of quality are suppressed.

在本實施方式中，因蝕刻氣體在腔室24的外部被電漿化，故相較於蝕刻氣體在腔室24的內部被電漿化之情形，到達被加工物11之蝕刻氣體中的離子的比例變低。因此，可一邊抑制元件晶片33的變形，一邊在元件晶片33的側面的整體去除加工應變或碎屑，其中，所述元件晶片33的變形係起因於離子且容易進行，並伴隨背面11b側的蝕刻。In this embodiment, since the etching gas is plasmaized outside the chamber 24 , the ions in the etching gas reaching the workpiece 11 proportion becomes lower. Therefore, processing strain or debris can be removed from the entire side surface of the element wafer 33 while suppressing the deformation of the element wafer 33, which is caused by ions and is easily carried out, and is accompanied by the deformation of the back surface 11b side. etch.

此外，在以不易產生加工應變或碎屑的條件切斷被加工物11之情形、藉由後續的清洗處理而確實地去除碎屑之情形、即便加工應變或碎屑殘留亦不會對元件15的動作或元件晶片33的品質造成阻礙之情形等，亦可省略上述之電漿狀態的蝕刻氣體的供給。In addition, in the case of cutting the workpiece 11 under the condition that processing strain or debris is unlikely to be generated, and when the debris is reliably removed by the subsequent cleaning process, even if the processing strain or debris remains, there will be no damage to the element 15. The operation of the device or the quality of the element wafer 33 hinders the supply of the above-mentioned etching gas in the plasma state.

在藉由電漿狀態的蝕刻氣體而去除殘留於各元件晶片33之加工應變或碎屑後，對樹脂層21施加外力，配合元件晶片33而分割此樹脂層21（樹脂層分割步驟）。在本實施方式中，藉由擴張膠膜23而對樹脂層21施加外力，並分割樹脂層21。此外，在對樹脂層21施加外力前，宜先藉由清洗等方法而去除殘存於被加工物11之保護膜29。After removing processing strain or debris remaining on each element wafer 33 with plasma state etching gas, an external force is applied to the resin layer 21 to divide the resin layer 21 in accordance with the element wafer 33 (resin layer dividing step). In this embodiment, the resin layer 21 is divided by applying an external force to the resin layer 21 by expanding the adhesive film 23 . In addition, before applying external force to the resin layer 21 , it is preferable to remove the protective film 29 remaining on the workpiece 11 by cleaning or the like.

圖8係表示擴張膠膜23之情況之剖面圖，圖9係表示樹脂層21已被分割之狀態之剖面圖。在本實施方式中，例如使用圖8及圖9所示之擴張裝置72而擴張膠膜23。如圖8及圖9所示，擴張裝置72具有圓筒狀的鼓輪74，所述鼓輪74在上端具有大於被加工物11的直徑之圓形狀的開口部。FIG. 8 is a cross-sectional view showing the state of expanding the adhesive film 23, and FIG. 9 is a cross-sectional view showing the state in which the resin layer 21 has been divided. In this embodiment, for example, the adhesive film 23 is expanded using the expansion device 72 shown in FIGS. 8 and 9 . As shown in FIGS. 8 and 9 , the expanding device 72 has a cylindrical drum 74 having a circular opening at an upper end that is larger than the diameter of the workpiece 11 .

在鼓輪74的上端部，沿著鼓輪74的圓周方向排列有多個輥76。又，在鼓輪74的外側配置有多個柱狀的支撐構件78。在支撐構件78的下端部，分別連結有使支撐構件78沿著鉛直方向移動（升降）之氣缸（未圖示）。On the upper end portion of the drum 74 , a plurality of rollers 76 are arranged along the circumferential direction of the drum 74 . In addition, a plurality of columnar support members 78 are arranged outside the drum 74 . Air cylinders (not shown) for moving (elevating) the support member 78 in the vertical direction are respectively connected to lower ends of the support member 78 .

各支撐構件78的上端部被固定於在中央具有圓形狀的開口部之環狀的工作台80的底面。工作台80的開口部的直徑大於鼓輪74的直徑（外徑），鼓輪74的上部插入工作台80的開口部。在工作台80的上方例如配置環狀的固定構件82，所述固定構件82係在與工作台80的上表面之間夾入並固定框架25。The upper end portion of each support member 78 is fixed to the bottom surface of an annular table 80 having a circular opening in the center. The diameter of the opening of the table 80 is larger than the diameter (outer diameter) of the drum 74 , and the upper part of the drum 74 is inserted into the opening of the table 80 . Above the table 80 , for example, a ring-shaped fixing member 82 is arranged, and the fixing member 82 sandwiches and fixes the frame 25 between the upper surface of the table 80 .

在擴張膠膜23並分割樹脂層21時，首先，藉由氣缸（未圖示）而使支撐構件78移動，將輥76的上端與工作台80的上表面配置於大致相同的高度。然後，在工作台80的上表面配置框架25，藉由環狀的固定構件82而將框架25固定於工作台80（圖8）。此時，被加工物11係以與鼓輪74的上端的開口部重疊之方式被配置。When expanding the adhesive film 23 and dividing the resin layer 21 , first, the supporting member 78 is moved by an air cylinder (not shown), and the upper end of the roller 76 is arranged at substantially the same height as the upper surface of the table 80 . Then, the frame 25 is arranged on the upper surface of the table 80 , and the frame 25 is fixed to the table 80 by the ring-shaped fixing member 82 ( FIG. 8 ). At this time, the workpiece 11 is arranged so as to overlap the opening at the upper end of the drum 74 .

接著，藉由氣缸（未圖示）而使支撐構件78下降，拉下工作台80。膠膜23的一部分係被鼓輪74及輥76支撐而維持其高度。因此，若將框架25連同工作台80一起拉下，則膠膜23係藉由框架25而朝向半徑方向的外側被拉伸，放射狀地被擴張。Next, the support member 78 is lowered by an air cylinder (not shown), and the table 80 is pulled down. A part of the adhesive film 23 is supported by the drum 74 and the roller 76 to maintain its height. Therefore, when the frame 25 is pulled down together with the table 80, the adhesive film 23 is stretched outward in the radial direction by the frame 25 and expanded radially.

若膠膜23被擴張，則此膠膜23所貼附之樹脂層21亦被施加朝向半徑方向的外側之外力。其結果，樹脂層21在相鄰之元件晶片33的間隙中斷裂。亦即，配合元件晶片33而將樹脂層21分割成碎片21a，成為在元件晶片33的正面11a側設置有此樹脂層21的碎片21a之狀態（圖9）。其後，元件晶片33連同碎片21a一起從膠膜23被拾取，並被安裝至任意的基板等。If the adhesive film 23 is expanded, the resin layer 21 to which the adhesive film 23 is attached is also exerted an external force toward the outside in the radial direction. As a result, the resin layer 21 breaks in the gap between the adjacent element wafers 33 . That is, the resin layer 21 is divided into fragments 21 a according to the element wafer 33 , and the fragments 21 a of the resin layer 21 are provided on the front surface 11 a side of the element wafer 33 ( FIG. 9 ). Thereafter, the element wafer 33 is picked up from the adhesive film 23 together with the chip 21a, and mounted to an arbitrary substrate or the like.

如上述，在本實施方式之元件晶片的製造方法中，因在被加工物11的正面11a側形成包含未硬化或半硬化的狀態的樹脂之樹脂層21後，從被加工物11的背面11b側沿著切割道（分割預定線）13切斷被加工物11，故相較於從正面11a側切斷被加工物11之情形，熱不易傳遞至設置於正面11a側之樹脂層21。因此，相較於習知方法，可抑制樹脂層21的硬化。As described above, in the method for manufacturing an element wafer according to the present embodiment, since the resin layer 21 containing uncured or semi-hardened resin is formed on the front surface 11a side of the workpiece 11, Since the workpiece 11 is cut along the cutting line (planned dividing line) 13, heat is less easily transmitted to the resin layer 21 provided on the front 11a side than when the workpiece 11 is cut from the front 11a side. Therefore, hardening of the resin layer 21 can be suppressed compared to the conventional method.

此外，在本實施方式中，雖未更換黏貼而使用相同的膠膜23，但亦可因應需要而將膠膜23更換黏貼。例如，若電漿狀態的蝕刻氣體接觸膠膜23，則此膠膜23有劣化之可能性。於是，亦可在供給電漿狀態的蝕刻氣體後，更換黏貼膠膜23。In addition, in this embodiment, although the same adhesive film 23 is used without replacement, the adhesive film 23 can also be replaced as needed. For example, if the etching gas in the plasma state contacts the adhesive film 23, the adhesive film 23 may be deteriorated. Therefore, the adhesive film 23 may be replaced after supplying the etching gas in a plasma state.

此外，在更換黏貼膠膜之情形中，更換黏貼後的膠膜只要具有擴張性即可。亦即，具有擴張性之膠膜23的往被加工物11的正面11a側的貼附，係在被加工物11形成樹脂層21後且分割樹脂層21前的任意時間點進行。In addition, in the case of replacing the pasted adhesive film, it is only necessary that the pasted adhesive film after replacement has expansibility. That is, the sticking of the expandable adhesive film 23 to the front surface 11a side of the workpiece 11 is performed at any time after the resin layer 21 is formed on the workpiece 11 and before the resin layer 21 is divided.

又，在更換黏貼膠膜之情形中，亦可不需非得在被加工物11的正面11a側貼附具有擴張性之膠膜23。例如，亦可在將被加工物11切斷成多個元件晶片33後且分割樹脂層21前的任意時間點，將具有擴張性之膠膜23貼附於被加工物11的背面11b側。在此情形中，亦只要以同樣的方法擴張膠膜23並分割樹脂層21即可。Also, in the case of replacing the adhesive film, it is not necessary to stick the expandable adhesive film 23 on the front surface 11a side of the workpiece 11 . For example, the expandable adhesive film 23 may be attached to the rear surface 11b side of the workpiece 11 at any time after the workpiece 11 is cut into a plurality of element chips 33 and before the resin layer 21 is divided. In this case, it is sufficient to expand the adhesive film 23 and divide the resin layer 21 in the same way.

再者，在本實施方式中，雖對多條切割道13依序照射雷射光束31而形成槽11c（第一道次），之後以加深各槽11c之方式照射雷射光束31，藉此切斷被加工物11（第二道次以後），但亦可在沿著某切割道13切斷被加工物11後，再沿著其他切割道13切斷被加工物11。Moreover, in this embodiment, although the laser beam 31 is irradiated sequentially to a plurality of scribe lines 13 to form the groove 11c (the first pass), and then the laser beam 31 is irradiated to deepen each groove 11c, thereby The workpiece 11 is cut (after the second pass), but the workpiece 11 may be cut along another cutting lane 13 after cutting the workpiece 11 along a certain cutting lane 13 .

此外，照射於被加工物11之雷射光束31亦可以其被照射區域的形狀（光束輪廓）成為線狀或矩形之方式被修整形狀。在此情形中，例如，藉由使被照射區域的長邊方向與切割道13的寬度方向一致，而形成寬度寬的槽11c。又，亦可對於各切割道13形成互相平行的多個槽11c。In addition, the shape of the laser beam 31 irradiated on the workpiece 11 may be trimmed so that the shape of the irradiated area (beam profile) becomes linear or rectangular. In this case, for example, the groove 11 c having a wide width is formed by aligning the longitudinal direction of the irradiated region with the width direction of the scribe line 13 . In addition, a plurality of grooves 11 c parallel to each other may be formed for each scribe line 13 .

再者，在本實施方式中，雖將保護膜29使用作為在使電漿狀態的蝕刻氣體作用於被加工物11時的遮罩層，但亦可取代此保護膜29，使用以藉由光微影等所形成之感光性的樹脂而成之遮罩層等。如使電漿狀態的蝕刻氣體作用於被加工物11之時間充分短之情形般，在蝕刻氣體對被加工物11的影響小之情形中，亦可不使用遮罩層而使電漿狀態的蝕刻氣體作用於被加工物11。Furthermore, in this embodiment, although the protective film 29 is used as a mask layer when the plasma state etching gas is applied to the workpiece 11, it may be used instead of the protective film 29 to transmit A masking layer made of photosensitive resin formed by lithography, etc. If the time for which the etching gas in the plasma state acts on the workpiece 11 is sufficiently short, in the case where the effect of the etching gas on the workpiece 11 is small, the etching in the plasma state can also be performed without using a mask layer. The gas acts on the workpiece 11 .

（第二實施方式） 在本實施方式之元件晶片的製造方法中，將雷射光束31的照射與電漿狀態的蝕刻氣體的供給進行組合而切斷被加工物11。此外，在切斷被加工物11前，與上述之第一實施方式同樣地，在被加工物11的正面11a側形成樹脂層21（樹脂層形成步驟）。又，在此被加工物11的正面11a側（樹脂層21）貼附膠膜23（膠膜貼附步驟），進一步在被加工物11的背面11b側形成保護膜29（保護膜形成步驟）。 (Second Embodiment) In the method of manufacturing an element wafer according to this embodiment, the irradiation of the laser beam 31 is combined with the supply of etching gas in a plasma state to cut the workpiece 11 . In addition, before the workpiece 11 is cut, the resin layer 21 is formed on the front surface 11 a side of the workpiece 11 as in the first embodiment described above (resin layer forming step). Here, the adhesive film 23 is attached to the front surface 11 a side (resin layer 21 ) of the workpiece 11 (adhesive film attaching step), and the protective film 29 is further formed on the rear surface 11 b side of the workpiece 11 (protective film forming step). .

例如，在被加工物11的背面11b側已形成保護膜29後，從此背面11b側沿著切割道13切斷被加工物11，藉此製造分別具有元件15之多個元件晶片33（被加工物切斷步驟）。更具體而言，首先，將會被被加工物11吸收之波長的雷射光束31沿著切割道13照射至被加工物11，藉此形成在被加工物11的背面11b開口之槽11c（槽形成步驟）。For example, after the protective film 29 has been formed on the back surface 11b side of the workpiece 11, the workpiece 11 is cut along the dicing line 13 from the rear surface 11b side, thereby manufacturing a plurality of element wafers 33 (processed wafers 33) each having the elements 15. object cutting step). More specifically, first, a laser beam 31 of a wavelength absorbed by the workpiece 11 is irradiated to the workpiece 11 along the scribe line 13, thereby forming a groove 11c ( groove forming step).

在本實施方式中，亦使用上述之雷射加工裝置12而對被加工物11照射雷射光束31（圖5）。具體的程序等係與在上述之第一實施方式中對被加工物11照射雷射光束31之情形同樣。但是，雷射光束31的平均輸出、對各切割道13照射雷射光束31之次數（道次數）等，係在不切斷被加工物11的範圍內被調整。圖10係表示形成槽11c後的被加工物11之剖面圖。Also in this embodiment, the laser beam 31 is irradiated to the workpiece 11 using the laser processing apparatus 12 mentioned above (FIG. 5). Specific procedures and the like are the same as those in the case of irradiating the workpiece 11 with the laser beam 31 in the first embodiment described above. However, the average output of the laser beam 31 , the number of times (number of passes) to irradiate the laser beam 31 to each scribe line 13 , etc. are adjusted within a range not to cut the workpiece 11 . Fig. 10 is a cross-sectional view showing the workpiece 11 after the grooves 11c are formed.

已形成在被加工物11的背面11b開口之槽11c後，從此背面11b側供給電漿狀態的蝕刻氣體，藉此去除被加工物11的正面11a與槽11c的底部之間的部分而切斷被加工物11（電漿蝕刻步驟）。After forming the groove 11c opened on the back surface 11b of the workpiece 11, an etching gas in a plasma state is supplied from the rear surface 11b side, thereby removing the portion between the front surface 11a of the workpiece 11 and the bottom of the groove 11c and cutting. Workpiece 11 (plasma etching step).

圖11係示意地表示與上述之第一實施方式的電漿處理裝置22不同之電漿處理裝置92之剖面圖。在本實施方式中，例如使用圖11所示之電漿處理裝置92而從背面11b側對被加工物11供給電漿狀態的蝕刻氣體。但是，亦可使用第一實施方式的電漿處理裝置22。FIG. 11 is a cross-sectional view schematically showing a plasma processing apparatus 92 different from the plasma processing apparatus 22 of the first embodiment described above. In this embodiment, for example, an etching gas in a plasma state is supplied to the workpiece 11 from the rear surface 11 b side using the plasma processing apparatus 92 shown in FIG. 11 . However, the plasma processing apparatus 22 of the first embodiment may also be used.

如圖11所示，電漿處理裝置92具備在內部設有處理空間之腔室94。在腔室94的側壁形成有供被加工物11與框架25通過之大小的開口部94a。在開口部94a的外部設有可覆蓋此開口部94a之大小的蓋體96。As shown in FIG. 11 , the plasma processing apparatus 92 includes a chamber 94 having a processing space inside. An opening 94 a of a size through which the workpiece 11 and the frame 25 pass is formed on a side wall of the chamber 94 . A cover 96 of a size capable of covering the opening 94a is provided outside the opening 94a.

蓋體96連結有開關機構（未圖示），蓋體96係藉由此開關機構而移動。例如，藉由使蓋體96往下方移動，使開口部94a露出，而可通過此開口部94a而將被加工物11搬入腔室94的內部的處理空間，或可將被加工物11從腔室94的內部的處理空間搬出。A switch mechanism (not shown) is connected to the cover body 96, and the cover body 96 is moved by the switch mechanism. For example, by moving the lid 96 downward to expose the opening 94a, the workpiece 11 can be carried into the processing space inside the chamber 94 through the opening 94a, or the workpiece 11 can be removed from the chamber. The processing space inside the chamber 94 is moved out.

在腔室94的底壁形成有排氣口94b。此排氣口94b係與真空泵等排氣單元98連接。在腔室94的空間內配置有下部電極100。下部電極100係利用導電性材料而被形成為圓盤狀，並在腔室94的外部與高頻電源102連接。An exhaust port 94 b is formed on the bottom wall of the chamber 94 . This exhaust port 94b is connected to an exhaust unit 98 such as a vacuum pump. The lower electrode 100 is arranged in the space of the chamber 94 . The lower electrode 100 is formed in a disk shape from a conductive material, and is connected to a high-frequency power source 102 outside the chamber 94 .

在下部電極100的上表面配置有卡盤台104。卡盤台104例如具有將電極106a及電極106b埋入板狀的絕緣部而成之構造，並藉由作用於電極106a及電極106b與被加工物11之間之電力而吸附被加工物11。A chuck table 104 is disposed on the upper surface of the lower electrode 100 . The chuck table 104 has, for example, a structure in which the electrodes 106 a and 106 b are embedded in a plate-shaped insulating portion, and absorbs the workpiece 11 by electric power acting between the electrodes 106 a and 106 b and the workpiece 11 .

例如，電極106a被構成為可連接直流電源108a的正極，電極106b被構成為可連接直流電源108b的負極。此外，直流電源108a與直流電源108b亦可為同一個直流電源。又，傳遞吸引泵等的吸引力之吸引路徑的端部亦可在卡盤台104的上表面開口。For example, the electrode 106a is configured to be connectable to the positive pole of the DC power supply 108a, and the electrode 106b is configured to be connectable to the negative pole of the DC power supply 108b. In addition, the DC power source 108a and the DC power source 108b can also be the same DC power source. In addition, the end of the suction path that transmits the suction force of the suction pump or the like may be opened on the upper surface of the chuck table 104 .

在腔室94的上壁係透過絕緣構件112而安裝有上部電極110，所述上部電極110係使用導電性材料而被形成為圓盤狀。在上部電極110的底面側形成有多個氣體噴出孔110a。氣體噴出孔110a係透過設於上部電極110的上表面側之氣體供給孔110b等而與氣體供給源114連接。藉此，可從氣體供給源114將蝕刻氣體供給至腔室94的處理空間。此上部電極110亦在腔室94的外部與高頻電源116連接。An upper electrode 110 is attached to the upper wall of the chamber 94 through an insulating member 112, and the upper electrode 110 is formed in a disc shape using a conductive material. A plurality of gas ejection holes 110 a are formed on the bottom surface side of the upper electrode 110 . The gas ejection hole 110 a is connected to the gas supply source 114 through the gas supply hole 110 b provided on the upper surface side of the upper electrode 110 or the like. Accordingly, the etching gas can be supplied from the gas supply source 114 to the processing space of the chamber 94 . This upper electrode 110 is also connected to a high-frequency power source 116 outside the chamber 94 .

在將電漿狀態的蝕刻氣體供給至被加工物11的背面11b側時，係通過開口部94a而將被加工物11搬入腔室94的處理空間，並載置於卡盤台104。於此，以使貼附於樹脂層21之膠膜23接觸卡盤台104的上表面之方式，亦即，以將背面11b側朝向上方之方式，將被加工物11載置於卡盤台104。When the etching gas in the plasma state is supplied to the rear surface 11 b side of the workpiece 11 , the workpiece 11 is carried into the processing space of the chamber 94 through the opening 94 a and placed on the chuck table 104 . Here, the workpiece 11 is placed on the chuck table so that the adhesive film 23 attached to the resin layer 21 contacts the upper surface of the chuck table 104, that is, with the back surface 11b facing upward. 104.

接著，藉由直流電源108a與直流電源108b，而將直流電壓施加於電極106a及電極106b。藉此，被加工物11等係藉由作用於電極106a及電極106b與被加工物11之間之電力而被吸附於卡盤台104。Then, a DC voltage is applied to the electrode 106a and the electrode 106b by the DC power source 108a and the DC power source 108b. Thereby, the workpiece 11 and the like are attracted to the chuck table 104 by the electric power acting between the electrodes 106 a and 106 b and the workpiece 11 .

在被加工物11被吸附於卡盤台104後，從被加工物11的背面11b側將電漿狀態的蝕刻氣體供給至被加工物11。具體而言，首先，以開關機構使蓋體96移動而關閉開口部94a。藉此，腔室94的處理空間被密閉。又，使排氣單元98運作，將腔室94的處理空間進行減壓。此外，亦可對處理空間供給適量的惰性氣體。After the workpiece 11 is adsorbed on the chuck table 104 , an etching gas in a plasma state is supplied to the workpiece 11 from the back surface 11 b side of the workpiece 11 . Specifically, first, the opening part 94a is closed by moving the lid body 96 by the opening and closing mechanism. Thereby, the processing space of the chamber 94 is sealed. Also, the exhaust unit 98 is operated to decompress the processing space of the chamber 94 . In addition, an appropriate amount of inert gas may be supplied to the processing space.

在此狀態下，若一邊從氣體供給源114以預定的流量供給蝕刻氣體，一邊以高頻電源102及高頻電源116對下部電極100及上部電極110供給適當的高頻電力，則存在於下部電極100與上部電極110之間之蝕刻氣體的一部分的分子會轉變成離子及自由基。In this state, when an etching gas is supplied at a predetermined flow rate from the gas supply source 114 and an appropriate high-frequency power is supplied to the lower electrode 100 and the upper electrode 110 by the high-frequency power supply 102 and the high-frequency power supply 116, the Some molecules of the etching gas between the electrode 100 and the upper electrode 110 are converted into ions and radicals.

其結果，將包含離子及自由基之電漿狀態的蝕刻氣體供給至被卡盤台104保持之被加工物11的背面11b側。此外，因在被加工物11的背面11b側設有保護膜29，故此保護膜29成為遮罩層，電漿狀態的蝕刻氣體幾乎未對被加工物11的背面11b作用，而主要作用於槽11c。As a result, the plasma state etching gas containing ions and radicals is supplied to the back surface 11 b side of the workpiece 11 held by the chuck table 104 . In addition, since the protective film 29 is provided on the back surface 11b side of the workpiece 11, the protective film 29 serves as a mask layer, and the etching gas in the plasma state hardly acts on the rear surface 11b of the workpiece 11, but mainly acts on the grooves. 11c.

在被加工物11的正面11a與槽11c的底部之間的部分厚至某程度之情形中，為了適當地去除此部分，宜重複膜形成、部分膜去除、槽加工這三個步驟。例如，在將使用矽所形成之晶圓作為被加工物11之情形中，如下述般進行。In the case where the portion between the front surface 11a of the workpiece 11 and the bottom of the groove 11c is thick to some extent, in order to properly remove this portion, three steps of film formation, partial film removal, and groove processing are preferably repeated. For example, when a wafer formed using silicon is used as the workpiece 11, it is performed as follows.

在膜形成的步驟中，例如一邊保持腔室94的內部空間的壓力，一邊從氣體供給源114以預定的流量供給C 4F 8，並對下部電極100及上部電極110供給預定的高頻電力。藉此，使氟系的材料堆積於上述之槽11c的內側，而可形成覆蓋槽11c的內面之薄膜。此由氟系材料而成之膜，對於將SF 6作為原料所生成之離子及自由基具有預定的耐受性。 In the film forming step, for example, while maintaining the pressure in the internal space of the chamber 94, C 4 F 8 is supplied from the gas supply source 114 at a predetermined flow rate, and a predetermined high-frequency power is supplied to the lower electrode 100 and the upper electrode 110 . Thereby, the fluorine-based material is deposited inside the above-mentioned groove 11c to form a thin film covering the inner surface of the groove 11c. The film made of this fluorine-based material has predetermined resistance to ions and radicals generated from SF 6 as a raw material.

在部分膜去除的步驟中，例如一邊將腔室94的內部空間的壓力保持固定，一邊從氣體供給源114以預定的流量供給SF 6，並對下部電極100及上部電極110供給預定的高頻電力。藉此，可產生將SF 6作為原料之離子及自由基。此外，在此部分膜去除的步驟中，相較於接下來的槽加工的步驟，增大供給至下部電極100之電力。 In the step of partially removing the film, for example, while keeping the pressure of the internal space of the chamber 94 constant, SF 6 is supplied from the gas supply source 114 at a predetermined flow rate, and a predetermined high frequency is supplied to the lower electrode 100 and the upper electrode 110 . electricity. Thereby, ions and radicals using SF 6 as a raw material can be generated. In addition, in this partial film removal step, the electric power supplied to the lower electrode 100 is increased compared to the subsequent groove processing step.

若增大供給至下部電極100之電力，則蝕刻的非等向性提高。具體而言，將覆蓋槽11c之膜的下部電極100側（亦即，槽11c的底側）的部分優先地進行加工。亦即，藉由將SF 6作為原料所生成之離子及自由基，而可僅去除覆蓋槽11c之膜的覆蓋槽11c的底部之部分。 When the power supplied to the lower electrode 100 is increased, the anisotropy of etching improves. Specifically, the portion of the film covering the groove 11c on the lower electrode 100 side (that is, the bottom side of the groove 11c) is preferentially processed. That is, only the portion of the film covering the groove 11c covering the bottom of the groove 11c can be removed by using the ions and radicals generated by using SF 6 as a raw material.

在槽加工的步驟中，例如一邊保持腔室94的處理空間的壓力，一邊從氣體供給源114以預定的流量供給SF 6，並對下部電極100及上部電極110供給預定的高頻電力。藉此，產生將SF 6作為原料之離子及自由基，而可加工未被膜覆蓋之槽11c的底部。 In the step of grooving, for example, while maintaining the pressure of the processing space of the chamber 94 , SF 6 is supplied from the gas supply source 114 at a predetermined flow rate, and predetermined high-frequency power is supplied to the lower electrode 100 and the upper electrode 110 . Thereby, ions and radicals using SF6 as a raw material are generated, and the bottom of the groove 11c which is not covered with a film can be processed.

藉由重複進行如上述般的膜形成、部分膜去除、槽加工這三個步驟，而緩緩地加深槽11c，最後可沿著切割道13切斷被加工物11。在切斷被加工物11而獲得多個元件晶片33後，只要與上述之第一實施方式同樣地對樹脂層21施加外力，並配合元件晶片33而分割此樹脂層21即可（樹脂層分割步驟）。By repeating the three steps of film formation, partial film removal, and groove processing as described above, the groove 11 c is gradually deepened, and finally the workpiece 11 can be cut along the scribe line 13 . After cutting the workpiece 11 to obtain a plurality of element wafers 33, it is only necessary to apply an external force to the resin layer 21 in the same manner as in the above-mentioned first embodiment, and divide the resin layer 21 in accordance with the element wafers 33 (resin layer division). step).

在本實施方式中，因從背面11b側照射雷射光束31而形成槽11c，之後，從背面11b側供給電漿狀態的蝕刻氣體而切斷被加工物11，故相較於僅以雷射光束31切斷被加工物11之情形，熱不易傳遞至正面11a側的樹脂層21。因此，可更適當地抑制樹脂層21的硬化。此外，上述之第一實施方式及其變形例之方法等，能針對本實施方式的方法等而任意地組合。In the present embodiment, since the groove 11c is formed by irradiating the laser beam 31 from the back surface 11b side, and then the etching gas in a plasma state is supplied from the back surface 11b side to cut the workpiece 11, it is compared with only using the laser beam. When the light beam 31 cuts the workpiece 11, the heat is not easily transmitted to the resin layer 21 on the front 11a side. Therefore, hardening of the resin layer 21 can be suppressed more suitably. In addition, the methods and the like of the above-mentioned first embodiment and its modifications can be arbitrarily combined with the methods and the like of this embodiment.

（第三實施方式） 在本實施方式之元件晶片的製造方法中，從被加工物11的背面11b側供給電漿狀態的蝕刻氣體，藉此切斷被加工物11。此外，在切斷被加工物11前，與上述之第一實施方式同樣地，在被加工物11的正面11a側形成樹脂層21（樹脂層形成步驟）。又，在此被加工物11的正面11a側（樹脂層21）貼附膠膜23（膠膜貼附步驟），進一步在被加工物11的背面11b側形成保護膜29（保護膜形成步驟）。 (third embodiment) In the method of manufacturing an element wafer according to this embodiment, the etching gas in a plasma state is supplied from the rear surface 11 b side of the workpiece 11 , whereby the workpiece 11 is cut. In addition, before the workpiece 11 is cut, the resin layer 21 is formed on the front surface 11 a side of the workpiece 11 as in the first embodiment described above (resin layer forming step). Here, the adhesive film 23 is attached to the front surface 11 a side (resin layer 21 ) of the workpiece 11 (adhesive film attaching step), and the protective film 29 is further formed on the rear surface 11 b side of the workpiece 11 (protective film forming step). .

在被加工物11的背面11b側已形成保護膜29後，將此保護膜29進行加工，而形成覆蓋被加工物11的背面11b側的與元件15對應之區域之遮罩層（遮罩層形成步驟）。圖12係表示形成遮罩層35後的被加工物11之剖面圖。After the protective film 29 has been formed on the back surface 11b side of the workpiece 11, the protective film 29 is processed to form a mask layer (masking layer) covering the area corresponding to the element 15 on the back surface 11b side of the workpiece 11. forming steps). FIG. 12 is a cross-sectional view showing the workpiece 11 after the mask layer 35 is formed.

本實施方式的遮罩層35例如係藉由使用上述之雷射加工裝置12，以與在第一實施方式或第二實施方式形成槽11c時的程序同樣的程序而形成。亦即，遮罩層35係藉由以雷射光束31加工保護膜29而形成。The mask layer 35 of the present embodiment is formed, for example, by using the above-mentioned laser processing apparatus 12 in the same procedure as the procedure for forming the groove 11c in the first embodiment or the second embodiment. That is, the mask layer 35 is formed by processing the protective film 29 with the laser beam 31 .

具體的程序等係與在上述之第一實施方式中對被加工物11照射雷射光束31之情形同樣。但是，雷射光束31的平均輸出、照射雷射光束31之次數（道次數）等係在被加工物11幾乎不被加工之範圍內被調整。此外，亦可稍微加工被加工物11的背面11b側。Specific procedures and the like are the same as those in the case of irradiating the workpiece 11 with the laser beam 31 in the first embodiment described above. However, the average output of the laser beam 31, the number of times (the number of passes) to irradiate the laser beam 31, and the like are adjusted within a range in which the workpiece 11 is hardly processed. In addition, the back surface 11b side of the workpiece 11 may be slightly processed.

藉此，可沿著切割道13切斷保護膜29，形成覆蓋被加工物11的背面11b側的與元件15對應之區域之遮罩層35。此外，在本實施方式中，雖將保護膜29加工成遮罩層35，但亦可藉由以光微影等將感光性的樹脂進行加工而形成遮罩層35。Thereby, the protective film 29 can be cut along the dicing line 13, and the mask layer 35 which covers the area|region corresponding to the element 15 on the back surface 11b side of the workpiece 11 can be formed. In addition, in the present embodiment, the protective film 29 is processed into the mask layer 35 , but the mask layer 35 may also be formed by processing a photosensitive resin by photolithography or the like.

在被加工物11的背面11b已形成遮罩層35後，從此背面11b側供給電漿狀態的蝕刻氣體，藉此去除被加工物11的從遮罩層35露出之部分而切斷被加工物11（被加工物切斷步驟）。所使用之裝置、程序等係與在上述之第二實施方式中對被加工物11供給電漿狀態的蝕刻氣體之情形同樣。After the mask layer 35 is formed on the back surface 11b of the workpiece 11, an etching gas in a plasma state is supplied from the back surface 11b side, thereby removing the part of the workpiece 11 exposed from the mask layer 35 and cutting the workpiece. 11 (the step of cutting the workpiece). The devices, procedures, and the like used are the same as those in the case of supplying the etching gas in the plasma state to the workpiece 11 in the above-mentioned second embodiment.

在切斷被加工物11而獲得多個元件晶片33後，只要與上述之第一實施方式同樣地對樹脂層21施加外力，並配合元件晶片33而分割此樹脂層21即可（樹脂層分割步驟）。After cutting the workpiece 11 to obtain a plurality of element wafers 33, it is only necessary to apply an external force to the resin layer 21 in the same manner as in the above-mentioned first embodiment, and divide the resin layer 21 in accordance with the element wafers 33 (resin layer division). step).

在本實施方式中，因形成覆蓋被加工物11的背面11b側的與元件15對應之區域之遮罩層35，之後，從形成有遮罩層35之被加工物11的背面11b側供給電漿狀態的蝕刻氣體而切斷被加工物11，故相較於使用雷射光束31切斷被加工物11之情形，熱不易傳遞至正面11a側的樹脂層21。因此，可更適當地抑制樹脂層21的硬化。此外，上述之第一實施方式、第二實施方式及此等的變形例之方法等，能針對本實施方式的方法等而任意地組合。In this embodiment, since the mask layer 35 is formed covering the area corresponding to the element 15 on the back surface 11b side of the workpiece 11, after that, electricity is supplied from the back surface 11b side of the workpiece 11 on which the mask layer 35 is formed. Since the workpiece 11 is cut using the etching gas in a slurry state, heat is less likely to be transferred to the resin layer 21 on the front side 11 a side than when the workpiece 11 is cut using the laser beam 31 . Therefore, hardening of the resin layer 21 can be suppressed more suitably. In addition, the methods and the like of the above-mentioned first embodiment, second embodiment, and these modified examples can be arbitrarily combined with the method and the like of this embodiment.

此外，本發明不受到上述之各實施方式及各變形例的記載限制，能進行各種變更並實施。例如，在上述之各實施方式中，雖使用雷射光束或電漿狀態的蝕刻氣體而將被加工物11從背面11b側進行切斷，但被加工物11亦可藉由其他方法而從背面11b側被切斷。具體而言，亦可使用在由樹脂等而成之結合材中分散磨粒而成之環狀的切割刀片，從背面11b側切斷被加工物11。In addition, this invention is not limited by description of each said embodiment and each modification, It can change and implement variously. For example, in each of the above-mentioned embodiments, although the workpiece 11 is cut from the back side 11b side using a laser beam or plasma state etching gas, the workpiece 11 may also be cut from the back side by other methods. The 11b side is cut off. Specifically, it is also possible to cut the workpiece 11 from the rear surface 11b side using a ring-shaped cutting blade in which abrasive grains are dispersed in a binder made of resin or the like.

另外，上述之各實施方式及各變形例之構造、方法等，可在未脫離本發明之目的範圍內進行變更並實施。In addition, the structure, method, etc. of each embodiment and each modification mentioned above can be changed and implemented in the range which does not deviate from the object of this invention.

11:被加工物 11a:正面 11b:背面 11c:槽 13:切割道（分割預定線） 15:元件 21:樹脂層 21a:碎片 23:膠膜 25:框架 25a:開口部 27:原料 29:保護膜 31:雷射光束 33:元件晶片 35:遮罩層 2:旋轉塗布機 4:旋轉台 4a:上表面（保持面） 4b:流路 6:夾具 8:噴嘴 12:雷射加工裝置 14:卡盤台 14a:上表面（保持面） 14b:流路 16:夾具 18:雷射加工頭 22:電漿處理裝置 24:腔室 24a:側壁 24b:開口部 24c:底壁 24d:上壁 26:蓋體 28:開關機構 30:配管 32:減壓單元 34:台座 34a:吸引路徑 34b:流路 36:保持部 38:支撐部 40:卡盤台 42:絕緣部 42a:吸引路徑 44:電極 46:直流電源 48:吸引泵 50:循環單元 52:氣體供給單元 54:供給管 54a:供給口 56a:閥 56b:閥 56c:閥 58a:流量控制器 58b:流量控制器 58c:流量控制器 60a:閥 60b:閥 60c:閥 62a:氣體供給源 62b:氣體供給源 62c:氣體供給源 64:電極 66:高頻電源 68:分散構件 70:配管 72:擴張裝置 74:鼓輪 76:輥 78:支撐構件 80:工作台 82:固定構件 92:電漿處理裝置 94:腔室 94a:開口部 94b:排氣口 96:蓋體 98:排氣單元 100:下部電極 102:高頻電源 104:卡盤台 106a:電極 106b:電極 108a:直流電源 108b:直流電源 110:上部電極 110a:氣體噴出孔 110b:氣體供給孔 112:絕緣構件 114:氣體供給源 116:高頻電源 11: Processed object 11a: front 11b: back 11c: Slot 13: Cutting Road (Splitting Predetermined Line) 15: Element 21: resin layer 21a: Fragments 23: film 25: frame 25a: opening 27: raw materials 29: Protective film 31: Laser Beam 33: Component wafer 35: mask layer 2: Spin coater 4: Rotary table 4a: Upper surface (retaining surface) 4b: flow path 6: Fixture 8: Nozzle 12:Laser processing device 14: Chuck table 14a: Upper surface (retaining surface) 14b: flow path 16: Fixture 18: Laser processing head 22: Plasma treatment device 24: chamber 24a: side wall 24b: opening 24c: bottom wall 24d: upper wall 26: cover body 28: switch mechanism 30: Piping 32: Decompression unit 34: Pedestal 34a: Attraction path 34b: flow path 36: Keeping Department 38: support part 40: chuck table 42: Insulation part 42a: Attraction path 44: electrode 46: DC power supply 48:Suction pump 50: cyclic unit 52: Gas supply unit 54: Supply pipe 54a: supply port 56a: Valve 56b: Valve 56c: valve 58a: Flow controller 58b: Flow controller 58c: Flow controller 60a: valve 60b: Valve 60c: valve 62a: Gas supply source 62b: Gas supply source 62c: Gas supply source 64: electrode 66: High frequency power supply 68: Decentralized components 70: Piping 72: Expansion device 74: drum wheel 76: roll 78: Support member 80:Workbench 82: Fixed member 92: Plasma treatment device 94: chamber 94a: opening 94b: Exhaust port 96: cover body 98: exhaust unit 100: lower electrode 102: High frequency power supply 104: chuck table 106a: electrode 106b: electrode 108a: DC power supply 108b: DC power supply 110: upper electrode 110a: gas ejection hole 110b: gas supply hole 112: insulating member 114: Gas supply source 116: High frequency power supply

圖1係表示被加工物之立體圖。 圖2係表示已貼附具有擴張性之膠膜之被加工物之立體圖。 圖3係表示在被加工物的背面側塗布保護膜的原料之情況之剖面圖。 圖4係表示在背面側形成有保護膜之被加工物之剖面圖。 圖5係表示對被加工物照射雷射光束之情況之剖面圖。 圖6係表示經切斷後的被加工物之剖面圖。 圖7係示意地表示對被加工物供給電漿狀態的蝕刻氣體之情況之剖面圖。 圖8係表示膠膜被擴張之情況之剖面圖。 圖9係表示樹脂層已被分割之狀態之剖面圖。 圖10係表示已形成槽後的被加工物之剖面圖。 圖11係示意地表示電漿處理裝置之剖面圖。 圖12係表示已形成遮罩層後的被加工物之剖面圖。 Fig. 1 is a perspective view showing a workpiece. Fig. 2 is a perspective view showing a processed object to which an expandable adhesive film has been attached. Fig. 3 is a cross-sectional view showing a state where a material for a protective film is coated on the back side of a workpiece. Fig. 4 is a cross-sectional view showing a workpiece with a protective film formed on the back side. Fig. 5 is a cross-sectional view showing a state where a laser beam is irradiated to a workpiece. Fig. 6 is a cross-sectional view showing a cut workpiece. Fig. 7 is a cross-sectional view schematically showing a case where an etching gas in a plasma state is supplied to a workpiece. Fig. 8 is a cross-sectional view showing the situation where the adhesive film is expanded. Fig. 9 is a cross-sectional view showing a state where the resin layer is divided. Fig. 10 is a cross-sectional view showing a workpiece after grooves have been formed. Fig. 11 is a schematic cross-sectional view of a plasma processing apparatus. Fig. 12 is a cross-sectional view showing the workpiece after the mask layer has been formed.

11:被加工物 11: Processed object

11a:正面 11a: front

11b:背面 11b: back

11c:槽 11c: Slot

12:雷射加工裝置 12:Laser processing device

13:切割道(分割預定線) 13: Cutting Road (Splitting Predetermined Line)

14:卡盤台 14: Chuck table

14a:上表面(保持面) 14a: Upper surface (retaining surface)

14b:流路 14b: flow path

15:元件 15: Element

16:夾具 16: Fixture

18:雷射加工頭 18: Laser processing head

21:樹脂層 21: resin layer

23:膠膜 23: film

25:框架 25: frame

25a:開口部 25a: opening

29:保護膜 29: Protective film

31:雷射光束 31: Laser Beam

Claims (9)

一種元件晶片的製造方法，其將在由分割預定線所劃分之正面側的區域設置有元件之板狀的被加工物以該分割預定線進行分割，藉此製造包含該元件之元件晶片， 該元件晶片的製造方法包含： 樹脂層形成步驟，其在該被加工物的該正面側形成包含未硬化或半硬化的狀態的樹脂之樹脂層；以及 被加工物切斷步驟，其在該樹脂層形成步驟後，從在該正面側設置有該樹脂層之該被加工物的背面側沿著該分割預定線切斷該被加工物，藉此製造該元件晶片。 A method of manufacturing an element wafer, which comprises dividing a plate-like workpiece having a component provided in a region on the front side divided by a planned dividing line along the planned dividing line, thereby manufacturing an element wafer including the element, The manufacturing method of the element wafer comprises: a resin layer forming step of forming a resin layer containing resin in an uncured or semi-hardened state on the front side of the workpiece; and A workpiece cutting step of cutting the workpiece from the rear side of the workpiece provided with the resin layer on the front side along the dividing line after the resin layer forming step, thereby manufacturing the component wafer. 如請求項1之元件晶片的製造方法，其中， 在該被加工物切斷步驟後，進一步包含：樹脂層分割步驟，其藉由對該樹脂層施加外力，而配合該元件晶片分割該樹脂層。 The method for manufacturing a component wafer as claimed in item 1, wherein, After the workpiece cutting step, it further includes: a resin layer dividing step, which divides the resin layer according to the element wafer by applying an external force to the resin layer. 如請求項2之元件晶片的製造方法，其中， 在該樹脂層形成步驟後且該樹脂層分割步驟前，進一步包含：膠膜貼附步驟，其在該被加工物的該正面側貼附具有擴張性之膠膜， 在該樹脂層分割步驟中，藉由擴張該膠膜而對該樹脂層施加外力並分割該樹脂層。 The method for manufacturing a component wafer as claimed in claim 2, wherein, After the resin layer forming step and before the resin layer dividing step, further comprising: an adhesive film attaching step of attaching an expandable adhesive film on the front side of the workpiece, In the resin layer dividing step, an external force is applied to the resin layer by expanding the adhesive film and the resin layer is divided. 如請求項2之元件晶片的製造方法，其中， 在該被加工物切斷步驟後且該樹脂層分割步驟前，進一步包含：膠膜貼附步驟，其在該被加工物的該背面側貼附具有擴張性之膠膜， 在該樹脂層分割步驟中，藉由擴張該膠膜而對該樹脂層施加外力並分割該樹脂層。 The method for manufacturing a component wafer as claimed in claim 2, wherein, After the workpiece cutting step and before the resin layer dividing step, further comprising: an adhesive film attaching step of attaching an expandable adhesive film on the back side of the workpiece, In the resin layer dividing step, an external force is applied to the resin layer by expanding the adhesive film and the resin layer is divided. 如請求項1至4中任一項之元件晶片的製造方法，其中， 在該被加工物切斷步驟前，進一步包含：保護膜形成步驟，其在該被加工物的該背面側形成保護膜。 The method for manufacturing a device wafer according to any one of claims 1 to 4, wherein, Before the step of cutting the workpiece, a protective film forming step of forming a protective film on the back side of the workpiece is further included. 如請求項1至4中任一項之元件晶片的製造方法，其中， 在該被加工物切斷步驟中，將會被該被加工物吸收之波長的雷射光束沿著該分割預定線照射至該被加工物，藉此切斷該被加工物。 The method for manufacturing a device wafer according to any one of claims 1 to 4, wherein, In the workpiece cutting step, a laser beam of a wavelength to be absorbed by the workpiece is irradiated to the workpiece along the dividing line, thereby cutting the workpiece. 如請求項6之元件晶片的製造方法，其中， 在該被加工物切斷步驟後，進一步包含：電漿蝕刻步驟，其從該被加工物的該背面側供給電漿狀態的蝕刻氣體，藉此去除殘留於該元件晶片之加工應變或碎屑。 The method for manufacturing a component wafer as claimed in item 6, wherein, After the workpiece cutting step, it further includes: a plasma etching step, which supplies etching gas in a plasma state from the back side of the workpiece, thereby removing processing strain or debris remaining on the element wafer . 如請求項1至4中任一項之元件晶片的製造方法，其中， 該被加工物切斷步驟包含： 槽形成步驟，其將會被該被加工物吸收之波長的雷射光束沿著該分割預定線照射至該被加工物，藉此形成在該被加工物的該背面開口之槽；以及 電漿蝕刻步驟，其在該槽形成步驟後，從該被加工物的該背面側供給電漿狀態的蝕刻氣體，藉此去除該被加工物的該正面與該槽的底部之間的部分而切斷該被加工物。 The method for manufacturing a device wafer according to any one of claims 1 to 4, wherein, The workpiece cutting step includes: a groove forming step of irradiating a laser beam of a wavelength absorbed by the workpiece to the workpiece along the planned dividing line, thereby forming a groove opened on the rear surface of the workpiece; and a plasma etching step of supplying an etching gas in a plasma state from the back side of the workpiece after the groove forming step, whereby a portion between the front surface of the workpiece and the bottom of the groove is removed Cut the workpiece. 如請求項1至4中任一項之元件晶片的製造方法，其中， 在該被加工物切斷步驟前，進一步包含：遮罩層形成步驟，其在該被加工物形成遮罩層，該遮罩層覆蓋該被加工物的該背面側的與該元件對應之區域， 在該被加工物切斷步驟中，從形成有該遮罩層之該被加工物的該背面側供給電漿狀態的蝕刻氣體，藉此去除該被加工物的從該遮罩層露出之部分而切斷該被加工物。 The method for manufacturing a device wafer according to any one of claims 1 to 4, wherein, Before the step of cutting the workpiece, further comprising: a mask layer forming step of forming a mask layer on the workpiece, the mask layer covering the region corresponding to the element on the back side of the workpiece , In the workpiece cutting step, an etching gas in a plasma state is supplied from the back side of the workpiece on which the mask layer is formed, thereby removing a portion of the workpiece exposed from the mask layer And the workpiece is cut.
TW111145201A 2021-11-30 2022-11-25 Manufacturing method of device chips capable of suppressing hardening of resin layer TW202324521A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-194641 2021-11-30
JP2021194641A JP2023081007A (en) 2021-11-30 2021-11-30 Manufacturing method of device chip

Publications (1)

Publication Number Publication Date
TW202324521A true TW202324521A (en) 2023-06-16

Family

ID=86515242

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111145201A TW202324521A (en) 2021-11-30 2022-11-25 Manufacturing method of device chips capable of suppressing hardening of resin layer

Country Status (4)

Country Link
JP (1) JP2023081007A (en)
KR (1) KR20230081608A (en)
CN (1) CN116207042A (en)
TW (1) TW202324521A (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016092188A (en) 2014-11-04 2016-05-23 積水化学工業株式会社 Adhesive film for semiconductor wafer

Also Published As

Publication number Publication date
CN116207042A (en) 2023-06-02
KR20230081608A (en) 2023-06-07
JP2023081007A (en) 2023-06-09

Similar Documents

Publication Publication Date Title
US10177004B2 (en) Method of processing wafer
TW201643957A (en) Method of dividing wafer
JPWO2003071591A1 (en) Method for dividing semiconductor wafer
TWI780318B (en) Wafer processing method
TW201944481A (en) Wafer processing method
JP2020031135A (en) Silicon wafer processing method and plasma etching system
TW202324521A (en) Manufacturing method of device chips capable of suppressing hardening of resin layer
JP2004247443A (en) Working method of semiconductor wafer
JP6796983B2 (en) Mask forming method and wafer processing method
JP7214309B2 (en) Wafer processing method
JP7292803B2 (en) Wafer processing method
TW202326833A (en) Method for manufacturing device chip that prevents chip defects from occurring when device chips under manufacture are laminated and thermocompression bonded
TW202316507A (en) Manufacturing method of device chip in which a laser beam having an absorptive wavelength is irradiated onto the laminate from the front-surface side of the workpiece along the predetermined-cutting lines to form the processing grooves that cut off the laminate
JP2023056101A (en) Method for manufacturing device chip
JP7442927B2 (en) Chip manufacturing method
TW202345220A (en) Manufacturing method of chips
US11355359B2 (en) Workpiece processing method
JP2023172142A (en) Chip manufacturing method
JP2023168739A (en) Protection film formation method
JP2023092654A (en) Workpiece processing method
JP2024038907A (en) Wafer processing method
JP2020102588A (en) Method for processing wafer
JP2016105442A (en) Wafer processing method