CN116207042A - Method for manufacturing device chip - Google Patents
Method for manufacturing device chip Download PDFInfo
- Publication number
- CN116207042A CN116207042A CN202211453306.3A CN202211453306A CN116207042A CN 116207042 A CN116207042 A CN 116207042A CN 202211453306 A CN202211453306 A CN 202211453306A CN 116207042 A CN116207042 A CN 116207042A
- Authority
- CN
- China
- Prior art keywords
- workpiece
- resin layer
- device chip
- manufacturing
- work
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- 239000011347 resin Substances 0.000 claims abstract description 120
- 229920005989 resin Polymers 0.000 claims abstract description 120
- 238000005520 cutting process Methods 0.000 claims abstract description 39
- 238000005530 etching Methods 0.000 claims description 61
- 230000001681 protective effect Effects 0.000 claims description 40
- 230000001678 irradiating effect Effects 0.000 claims description 12
- 238000001020 plasma etching Methods 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 106
- 239000007789 gas Substances 0.000 description 94
- 239000010408 film Substances 0.000 description 61
- 239000000463 material Substances 0.000 description 19
- 150000002500 ions Chemical class 0.000 description 11
- 150000003254 radicals Chemical class 0.000 description 9
- 239000011261 inert gas Substances 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 238000000608 laser ablation Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- -1 Polyethylene Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a method for manufacturing a device chip, which can restrain hardening of a resin layer compared with the prior method. The method for manufacturing a device chip includes a device by dividing a plate-shaped object to be processed, which is provided with a device in a region on a front side divided by a division line, by the division line, wherein the method includes the steps of: a resin layer forming step of forming a resin layer containing an uncured or semi-cured resin on the front side of the work; and a work cutting step of cutting the work along the line to be cut from the back side of the work having the resin layer provided on the front side thereof after the resin layer forming step, thereby manufacturing the device chip.
Description
Technical Field
The present invention relates to a method for manufacturing device chips, which divides a plate-shaped workpiece provided with devices on a front side to manufacture device chips.
Background
In electronic devices typified by mobile phones and personal computers, a device chip having a device including an electronic circuit or the like is an essential component. For example, the front side of a wafer made of a semiconductor such as silicon (Si) is divided into a plurality of regions by predetermined dividing lines called streets, devices are formed in the respective regions, and then the wafer is divided along the predetermined dividing lines, thereby obtaining device chips.
In dividing a wafer into device chips, a cutting device having an annular tool called a cutting tool attached to a spindle is typically used. The wafer is cut into a plurality of device chips by cutting the wafer from the front side along a line to cut while supplying a liquid such as pure water to the wafer at a high speed.
A wafer may be divided into device chips by a laser processing apparatus having a laser oscillator capable of generating a laser beam having a wavelength absorbed by the wafer. In this case, the wafer is ablated by irradiating a predetermined line with a laser beam generated by a laser oscillator from the front surface side of the wafer, and the wafer is divided into a plurality of device chips.
In order to fix the device chips obtained by the above-described method to other device chips or substrates, a resin layer for adhesion called a non-conductive Film (NCF: non Conductive Film) or a Die Attach Film (DAF: die Attach Film) or the like may be provided on the front side of each device chip (for example, refer to patent document 1).
In this case, for example, a resin layer having a size capable of covering the entire front surface of the wafer is provided on the front surface side of the wafer before the wafer is divided into a plurality of device chips. Then, the resin layer is divided together with the wafer, whereby a plurality of device chips having the resin layer for bonding on the front side are obtained.
Patent document 1: japanese patent laid-open publication 2016-92188
The above-mentioned adhesive resin layer is provided on the wafer in a state of not being cured (a state of not being cured or half-cured) so as to be deformed appropriately by a pressure applied when the device chip is fixed to the object. However, when a wafer is processed by the conventional method to be divided into device chips, the resin layer may be hardened by heat generated during the processing, and thus the device chips may not be properly fixed to the object.
Disclosure of Invention
Accordingly, an object of the present invention is to provide a method for manufacturing a device chip, which can suppress hardening of a resin layer as compared with conventional methods.
According to one aspect of the present invention, there is provided a method for manufacturing a device chip including a device by dividing a plate-shaped workpiece provided with the device in a region on a front side divided by a division line by the division line, the method comprising the steps of: a resin layer forming step of forming a resin layer containing a resin in an uncured or semi-cured state on the front surface side of the workpiece; and a work cutting step of cutting the work along the predetermined dividing line from the back surface side of the work having the resin layer provided on the front surface side after the resin layer forming step, thereby manufacturing the device chip.
Preferably, the method for manufacturing a device chip further comprises the following resin layer dividing step: after the work cutting step, an external force is applied to the resin layer, thereby dividing the resin layer according to the device chips. The method for manufacturing a device chip further includes, for example, the tape attaching step of: after the resin layer forming step and before the resin layer dividing step, a tape having expansibility is attached to the front side of the work, and in the resin layer dividing step, the tape is expanded to thereby apply an external force to the resin layer to divide the resin layer. Or the manufacturing method of the device chip further comprises the following tape attaching step: after the work cutting step and before the resin layer dividing step, a tape having expansibility is attached to the back surface side of the work, and in the resin layer dividing step, the tape is expanded to thereby apply an external force to the resin layer to divide the resin layer.
In addition, the method for manufacturing a device chip preferably further includes a protective film forming step of: before the workpiece cutting step, a protective film is formed on the rear surface side of the workpiece.
In the workpiece cutting step, it is preferable that the workpiece is cut by irradiating the workpiece with a laser beam having a wavelength absorbed by the workpiece along the dividing line. In addition, the method for manufacturing a device chip preferably further includes the following plasma etching step: after the workpiece cutting step, an etching gas in a plasma state is supplied from the back surface side of the workpiece, thereby removing processing strain and chips remaining in the device chip.
Preferably, the workpiece cutting step includes the steps of: a groove forming step of irradiating the object with a laser beam having a wavelength absorbed by the object along the dividing line, thereby forming a groove open on the rear surface of the object; and a plasma etching step of supplying an etching gas in a plasma state from the back surface side of the workpiece after the groove forming step, thereby removing a portion between the front surface of the workpiece and the bottom of the groove to cut the workpiece.
In addition, the method for manufacturing a device chip preferably further includes a mask layer forming step of: before the workpiece cutting step, a mask layer covering a region of the rear surface side of the workpiece corresponding to the device is formed on the workpiece, and in the workpiece cutting step, an etching gas in a plasma state is supplied from the rear surface side of the workpiece on which the mask layer is formed, whereby a portion of the workpiece exposed from the mask layer is removed to cut the workpiece.
In the method for manufacturing a device chip according to one embodiment of the present invention, after a resin layer containing an uncured or semi-cured resin is formed on the front side of a workpiece, the workpiece is cut along a line to cut from the back side of the workpiece, so that heat is less likely to be transferred to the resin layer provided on the front side than in the case of cutting the workpiece from the front side. Thus, according to the method for manufacturing a device chip of one embodiment of the present invention, hardening of the resin layer can be suppressed as compared with the conventional method.
Drawings
Fig. 1 is a perspective view showing a workpiece.
Fig. 2 is a perspective view showing a work to which a tape having expandability is attached.
Fig. 3 is a cross-sectional view showing a case where a material of a protective film is applied to a rear surface side of a workpiece.
Fig. 4 is a cross-sectional view showing a work on which a protective film is formed on the back surface side.
Fig. 5 is a cross-sectional view showing a case where a laser beam is irradiated to a workpiece.
Fig. 6 is a cross-sectional view showing the workpiece after cutting.
Fig. 7 is a cross-sectional view schematically showing a case where an etching gas in a plasma state is supplied to a workpiece.
Fig. 8 is a sectional view showing a case where the tape is expanded.
Fig. 9 is a sectional view showing a state where the resin layer is divided.
Fig. 10 is a cross-sectional view showing the workpiece after the grooves are formed.
Fig. 11 is a sectional view schematically showing a plasma processing apparatus.
Fig. 12 is a cross-sectional view showing the work after the mask layer is formed.
Description of the reference numerals
11: a workpiece; 11a: a front face; 11b: a back surface; 11c: a groove; 13: spacer (dividing line); 15: a device; 21: a resin layer; 21a: a small piece; 23: a belt; 25: a frame; 25a: an opening portion; 27: raw materials; 29: a protective film; 31: a laser beam; 33: a device chip; 35: a mask layer; 2: a spin coater; 4: a rotary table; 4a: an upper surface (holding surface); 4b: a flow path; 6: a clamp; 8: a nozzle; 12: a laser processing device; 14: a chuck table; 14a: an upper surface (holding surface); 14b: a flow path; 16: a clamp; 18: a laser processing head; 22: a plasma processing device; 24: a chamber; 24a: a sidewall; 24b: an opening portion; 24c: a bottom wall; 24d: an upper wall; 26: a cover; 28: an opening and closing mechanism; 30: piping; 32: a decompression unit; 34: a table base; 34a: an absorption path; 34b: a flow path; 36: a holding section; 38: a support section; 40: a chuck table; 42: an insulating part; 42a: an absorption path; 44: an electrode; 46: a DC power supply; 48: a suction pump; 50: a circulation unit; 52: a gas supply unit; 54: providing a tube; 54a: providing a mouth; 56a: a valve; 56b: a valve; 56c: a valve; 58a: a flow controller; 58b: a flow controller; 58c: a flow controller; 60a: a valve; 60b: a valve; 60c: a valve; 62a: a gas supply source; 62b: a gas supply source; 62c: a gas supply source; 64: an electrode; 66: a high frequency power supply; 68: a dispersing member; 70: piping; 72: an expansion device; 74: a drum; 76: a roller; 78: a support member; 80: a work table; 82: a fixing member; 92: a plasma processing device; 94: a chamber; 94a: an opening portion; 94b: an exhaust port; 96: a cover; 98: an exhaust unit; 100: a lower electrode; 102: a high frequency power supply; 104: a chuck table; 106a: an electrode; 106b: an electrode; 108a: a DC power supply; 108b: a DC power supply; 110: an upper electrode; 110a: a gas ejection hole; 110b: a gas supply hole; 112: an insulating member; 114: a gas supply source; 116: a high frequency power supply.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
(embodiment 1)
Fig. 1 is a perspective view showing a workpiece 11 used in the method for manufacturing a device chip according to the present embodiment. The workpiece 11 is, for example, a disk-shaped wafer made of a semiconductor material such as silicon. The workpiece 11 includes: a front face 11a of a circular shape; and a circular back surface 11b on the opposite side of the front surface 11 a. The front surface 11a side of the workpiece 11 is divided into a plurality of small regions by a plurality of streets (lines to divide) 13 intersecting each other, and devices 15 including integrated circuits (ICs: integrated Circuit) and the like are formed in the respective small regions.
In the present embodiment, a disk-shaped wafer made of a semiconductor material such as silicon is used as the workpiece 11, but the material, shape, structure, size, and the like of the workpiece 11 are not limited. For example, a substrate made of another semiconductor, ceramic, resin, metal, or the like may be used as the workpiece 11. Similarly, the kind, number, shape, configuration, size, arrangement, and the like of the devices 15 are not limited.
In the method of manufacturing a device chip according to the present embodiment, first, the resin layer 21 is formed on the front surface 11a side of the work 11 (resin layer forming step). The resin layer 21 is typically a nonconductive Film (NCF: non Conductive Film) or a Die Attach Film (DAF: die Attach Film), and includes a resin in an uncured or semi-cured state. The resin layer 21 has a predetermined adhesive force and is used as an underfill material for mounting the device chips obtained by dividing the work 11 on another substrate or the like.
As shown in fig. 1, the resin layer 21 is a disk-shaped film having substantially the same diameter as the workpiece 11, and is adhered to the workpiece 11 so as to cover substantially the entire front surface 11 a. However, the kind of the resin layer 21 and the like are not limited. For example, the resin layer 21 may be formed by applying a non-conductive paste (NCP: non Conductive Paste) or the like to the front surface 11a side of the workpiece 11.
In addition, the material constituting the resin layer 21 and the like are not limited. The resin layer 21 uses, for example, a resin containing an epoxy resin, an acrylic resin, a urethane resin, a silicone resin, a polyimide resin, or the like as a main component. In addition, an oxidizing agent, a filler, or the like may be added to the resin layer 21.
After forming the resin layer 21 containing the resin in an uncured or semi-cured state on the front surface 11a side of the work 11, a tape having expansibility is attached to the front surface 11a side of the work 11 (tape attaching step). Fig. 2 is a perspective view showing the work 11 to which the belt 23 having expansibility is attached.
The belt 23 includes, for example: a circular base film (base material) having a diameter larger than the workpiece 11; and an adhesive layer (paste layer) provided on the base film. The base film is typically made of a resin such as polyolefin or polyvinyl chloride, and has expansibility.
The adhesive layer is typically composed of a resin containing an epoxy resin, an acrylic resin, a urethane resin, a silicone resin, a polyimide resin, a rubber resin, or the like as a main component, and has adhesiveness to the workpiece 11. The adhesive layer may be made of an ultraviolet-curable resin or the like that is cured by irradiation with ultraviolet rays.
As shown in fig. 2, the belt 23 is attached to both the workpiece 11 and the annular frame 25 disposed around the workpiece 11, for example. The frame 25 is formed in a ring shape from a metal such as stainless steel or aluminum, and has a circular opening 25a having a diameter larger than that of the workpiece 11 at the center.
The tape 23 is attached to the front surface 11a side (the resin layer 21) of the workpiece 11 and the frame 25 in a state where the workpiece 11 is disposed inside the opening 25a of the frame 25. Thus, the front surface 11a side of the workpiece 11 is supported by the frame 25 via the resin layer 21 and the belt 23, and the ease of handling the workpiece 11 is improved.
After the tape 23 is attached to the front surface 11a side of the workpiece 11, a protective film is formed on the rear surface 11b side of the workpiece 11 (protective film forming step). Fig. 3 is a cross-sectional view showing a case where the material 27 of the protective film is applied to the rear surface 11b side of the workpiece 11. In the present embodiment, for example, a material 27 for a protective film is applied to the workpiece 11 by using the spin coater 2 shown in fig. 3.
The spin coater 2 has a rotary table 4 configured to hold a workpiece 11. The upper surface (holding surface) 4a of the rotary table 4 is formed substantially flat, and is in contact with, for example, a tape 23 attached to the resin layer 21. The upper surface 4a is connected to a suction source (not shown) such as an ejector via a flow path 4b, a valve (not shown), and the like provided in the rotary table 4.
A rotation driving source (not shown) such as a motor for rotating the rotary table 4 about a rotation axis passing through the center of the upper surface 4a and substantially parallel to the vertical direction (up-down direction) is connected to the lower portion of the rotary table 4. A plurality of jigs 6 capable of holding and fixing the frame 25 are provided around the rotary table 4. A nozzle 8 capable of dropping a material 27 for a protective film is disposed above the center of the upper surface 4 a.
When forming the protective film on the rear surface 11b side of the workpiece 11, the workpiece 11 is first placed on the rotary table 4 so that the tape 23 attached to the resin layer 21 contacts the upper surface 4a, that is, the rear surface 11b side faces upward. When a negative pressure (suction force) generated by the suction source is applied to the upper surface 4a in this state, the belt 23 is sucked by the upper surface 4a, and the workpiece 11 is held on the rotary table 4 via the belt 23. The frame 25 is fixed by a plurality of jigs 6.
Next, the material 27 for the protective film is dropped from the nozzle 8 toward the center of the rear surface 11b of the workpiece 11, and the rotary table 4 is rotated. Thus, the material 27 of the protective film spreads from the center of the back surface 11b to the outside, and is applied to the entire back surface 11b of the workpiece 11. As the material 27 of the protective film, for example, water-soluble resins typified by polyvinyl alcohol (PVA), polyethylene glycol (PEG), oxidized Polyethylene (PEO), polyvinylpyrrolidone (PVP), and the like are used.
Then, the material 27 of the protective film applied to the work 11 is dried or the like, thereby forming a water-soluble protective film covering the entire rear surface 11b of the work 11. Fig. 4 is a cross-sectional view showing the workpiece 11 having the protective film 29 formed on the rear surface 11b side. In addition, the method of forming the protective film 29 is not particularly limited. For example, a tape made of resin or the like may be attached to the rear surface 11b side of the workpiece 11 to serve as the protective film 29.
After forming the protective film 29 on the rear surface 11b side of the workpiece 11, the workpiece 11 is cut along the streets 13 from the rear surface 11b side, whereby a plurality of device chips each having the device 15 are manufactured (workpiece cutting step). In the present embodiment, the workpiece 11 is irradiated with a laser beam having a wavelength absorbed by the workpiece 11 along the streets 13, thereby cutting the workpiece 11.
Fig. 5 is a cross-sectional view showing a case where the laser beam 31 is irradiated to the workpiece 11. In the present embodiment, for example, the laser beam 31 is irradiated to the workpiece 11 using the laser processing apparatus 12 shown in fig. 5. The X-axis direction (machine direction), the Y-axis direction (indexing direction), and the Z-axis direction (vertical direction) used in the following description are directions perpendicular to each other.
As shown in fig. 5, the laser processing apparatus 12 includes a chuck table 14 configured to hold the workpiece 11. The upper surface (holding surface) 14a of the chuck table 14 is formed substantially parallel to the X-axis direction and the Y-axis direction and substantially flat, and is in contact with, for example, a tape 23 attached to the resin layer 21. The upper surface 14a is connected to a suction source (not shown) such as an ejector via a flow path 14b, a valve (not shown), and the like provided in the chuck table 14.
A rotation driving source (not shown) such as a motor for rotating the chuck table 14 about a rotation axis passing through the center of the upper surface 14a and substantially parallel to the Z axis direction is connected to the lower portion of the chuck table 14. A plurality of jigs 16 capable of holding and fixing the frame 25 are provided around the chuck table 14. The chuck table 14, the rotation drive source, and the chuck 16 are supported by a ball screw type moving mechanism (not shown), and are moved in the X-axis direction and the Y-axis direction by the moving mechanism.
A laser processing head 18 for guiding a laser beam 31 generated by a laser oscillator (not shown) to the workpiece 11 held by the chuck table 14 is disposed above the chuck table 14. The laser oscillator has, for example, nd suitable for laser oscillation: a laser medium such as YAG generates a pulse-shaped laser beam 31 having a wavelength absorbed by the workpiece 11 at a predetermined repetition frequency.
The laser processing head 18 includes an optical system such as a mirror or a lens for guiding the pulsed laser beam 31 emitted from the laser oscillator to the workpiece 11, and for example, focuses the laser beam 31 at a predetermined position above the chuck table 14. The workpiece 11 is subjected to laser ablation processing by a laser beam 31 emitted from the laser processing head 18 to the workpiece 11.
When cutting the workpiece 11 by the laser beam 31, the workpiece 11 is placed on the chuck table 14 so that the tape 23 attached to the resin layer 21 contacts the upper surface 14a, that is, the rear surface 11b side is directed upward. When a negative pressure (suction force) generated by the suction source is applied to the upper surface 14a in this state, the belt 23 is sucked by the upper surface 14a, and the workpiece 11 is held by the chuck table 14 via the belt 23. The frame 25 is fixed by a plurality of jigs 16.
Next, the orientation of the chuck table 14 about the rotation axis is adjusted so that the longitudinal direction of the streets 13 to be processed coincides with the X-axis direction. The position of the chuck table 14 in the Y-axis direction is adjusted so that the laser processing head 18 is positioned above the extended line of the streets 13 (above a straight line passing through the center of the streets 13 in the width direction). The optical system of the laser processing head 18 and the like are adjusted so that the laser beam 31 is focused at a position in the Z-axis direction suitable for processing the object 11.
Then, the chuck table 14 is moved at a predetermined speed (processing feed speed) along the X-axis direction while irradiating the laser beam 31 from the laser processing head 18. That is, the converging point of the workpiece 11 and the laser beam 31 held by the chuck table 14 is relatively moved in the X-axis direction. As a result, the laser beam 31 is irradiated from the rear surface 11b side to the workpiece 11 along the streets 13.
The conditions under which the laser beam 31 is irradiated are adjusted within a range that allows the workpiece 11 to be processed (laser ablation processing). For example, the wavelength of the laser beam 31 is set to 266nm to 1064nm, the repetition frequency is set to 355nm, the repetition frequency is set to 10kHz to 1000kHz, the average output is set to 1W to 20W, the average output is set to 2W, and the machining feed rate is set to 10mm/s to 1000mm/s, and the machining feed rate is set to 400mm/s. However, there is no limitation on the specific conditions when the laser beam 31 is irradiated.
When the laser beam 31 is irradiated to the workpiece 11 along the streets 13, the portion of the workpiece 11 irradiated with the laser beam 31 is removed by laser ablation, and the grooves 11c along the streets 13 are formed on the rear surface 11b side of the workpiece 11. After the grooves 11c are formed for the spacer lanes 13 as objects, the grooves 11c are formed for all the spacer lanes 13 by the same process.
After the grooves 11c are formed in all the streets 13, the irradiation of the laser beam 31 is repeated so as to deepen each groove 11c. Then, the workpiece 11 is finally cut to obtain a plurality of device chips. When the thickness of the workpiece 11 is, for example, about 20 μm to 100 μm, the number of times (number of passes) of irradiating the laser beam 31 to each of the streets 13 is about 5 to 20 times (5 to 20 passes).
However, the number of times (number of passes) of irradiating the laser beam 31 to each of the streets 13 is not limited. In the case where the workpiece 11 is sufficiently thin, the average output of the laser beam 31 is sufficiently high, or the like, the workpiece 11 may be cut by one irradiation. Fig. 6 is a cross-sectional view showing the workpiece 11 after being divided into device chips 33.
When the workpiece 11 is processed by the laser ablation as described above, a melt or the like of the workpiece 11 may be scattered around and may adhere to the back surface 11b as chips. However, in the present embodiment, since the protective film 29 is formed on the rear surface 11b side of the workpiece 11, chips are not easily stuck to the rear surface 11b or the like of the workpiece 11, and contamination of the workpiece 11 and the device chip 33 can be prevented.
After the workpiece 11 is cut to manufacture the plurality of device chips 33, an etching gas in a plasma state is supplied from the back surface 11b side of the workpiece 11, and processing strain and chips remaining in the device chips 33 are removed (a plasma etching step). Fig. 7 is a cross-sectional view schematically showing a case where an etching gas in a plasma state is supplied to the workpiece 11. In the present embodiment, for example, the plasma processing apparatus 22 shown in fig. 7 is used to supply the etching gas in a plasma state from the rear surface 11b to the workpiece 11.
The plasma processing apparatus 22 has a chamber 24. A processing space for performing plasma processing on the workpiece 11 is provided in the chamber 24. An opening 24b through which the workpiece 11 and the frame 25 pass during the loading and unloading of the workpiece 11 is formed in the side wall 24a of the chamber 24.
A cover 26 for closing the opening 24b is disposed outside the side wall 24 a. An opening/closing mechanism 28 such as a cylinder is connected to the cover 26. The opening 24b is exposed by moving the cover 26 downward by the opening and closing mechanism 28, whereby the workpiece 11 can be carried into and out of the processing space. The opening 24b is closed by moving the cover 26 upward by the opening and closing mechanism 28, thereby sealing the processing space.
A pressure reducing unit 32 such as a vacuum pump is connected to the bottom wall 24c of the chamber 24 via a pipe 30. Therefore, for example, when the opening 24b is closed by the cover 26 and the pressure reducing unit 32 is operated in a state where the processing space is closed, the processing space of the chamber 24 is exhausted and reduced in pressure.
A table base 34 is provided inside the chamber 24. The table base 34 has: a disk-shaped holding portion 36; and a columnar support portion 38 for supporting the holding portion 36 from below. The width (diameter) of the support portion 38 is smaller than the width (diameter) of the holding portion 36, for example, and the upper end of the support portion 38 is connected to the lower end of the holding portion 36.
A chuck table 40 capable of holding the workpiece 11 is disposed on the upper surface of the holding portion 36. The chuck table 40 has: a disk-shaped insulating portion 42 made of an insulator; and a plurality of electrodes 44 embedded in the insulating portion 42. The plurality of electrodes 44 are each connected to a DC power supply 46 capable of applying a predetermined DC voltage (for example, a high DC voltage of about 5 kV) to the electrodes 44.
The insulating portion 42 of the chuck table 40 is provided with a plurality of suction paths 42a opened on the upper surface of the insulating portion 42 (i.e., the upper surface of the chuck table 40). The suction path 42a is connected to a suction pump 48 via a suction path 34a or the like formed in the table base 34.
For example, when the workpiece 11 or the like is placed on the chuck table 40 and the suction pump 48 is operated, the workpiece 11 or the like is sucked to the upper surface of the chuck table 40 by the suction force of the suction pump 48. When a DC voltage is applied to the electrode 44 by the DC power supply 46 and a potential difference is generated between the electrodes 44, the workpiece 11 and the like are attracted to the chuck table 40 by electric power applied between the electrode 44 and the workpiece 11. Thus, even if the interior of the chamber 24 is depressurized, the workpiece 11 can be held by the chuck table 40.
A flow path 34b is formed in the table base 34. Both ends of the flow path 34b are connected to a circulation unit 50 that circulates a refrigerant such as water. When the circulation unit 50 is operated, the refrigerant flows from one end to the other end of the flow path 34b, and cools the table base 34.
A gas supply unit 52 for supplying an etching gas is connected to an upper portion of the chamber 24. The gas supply unit 52 is configured to plasmatize the etching gas outside the chamber 24 and to supply the etching gas in a plasma state to the processing space of the chamber 24. Specifically, the gas supply unit 52 has a supply pipe 54 for supplying a flow of etching gas supplied to the chamber 24.
One end side (downstream side) of the supply pipe 54 is connected to the internal processing space via the upper wall 24d of the chamber 24. The other end side (upstream side) of the supply pipe 54 is connected to a gas supply source 62a via a valve 56a, a flow controller 58a, and a valve 60a, to a gas supply source 62b via a valve 56b, a flow controller 58b, and a valve 60b, and to a gas supply source 62c via a valve 56c, a flow controller 58c, and a valve 60 c.
When predetermined gases are supplied at predetermined flow rates from the gas supply sources 62a, 62b, and 62c, the gases are mixed in the supply pipe 54 to become etching gases for etching. For example, the gas supply source 62a supplies SF 6 And a fluorine-based gas, the gas supply source 62b supplies oxygen (O 2 Gas), the gas supply source 62c supplies an inert gas such as He. However, the composition, flow rate ratio, and the like of the gas supplied from the gas supply sources 62a, 62b, 62c can be arbitrarily changed according to the material of the processing object, the quality of the processing required, and the like.
The gas supply unit 52 has an electrode 64 for applying a high-frequency voltage to the etching gas in the supply tube 54. The electrode 64 is disposed around the midstream portion of the supply tube 54, and is connected to a high frequency power supply 66. The high-frequency power supply 66 applies a high-frequency voltage of, for example, 0.5kV or more and 5kV or less, and 450kHz or more and 2.45GHz or less to the electrode 64, with the Vpp (Voltage peak to peak, peak-to-peak voltage) being set to be high.
When a high-frequency voltage is applied to the etching gas flowing in the supply tube 54 using the electrode 64 and the high-frequency power supply 66, a part of the molecules of the etching gas are changed into ions and radicals. Then, an etching gas in a plasma state containing the ions and radicals is supplied from a supply port 54a opened at a downstream end of the supply pipe 54 to a processing space inside the chamber 24. In this way, the etching gas, which is subjected to the plasma treatment outside the chamber 24, is supplied to the processing space inside the chamber 24.
A dispersing member 68 for dispersing (diffusing) the etching gas in a plasma state is attached to the inner surface of the upper wall 24d of the chamber 24 so as to cover the supply port 54 a. The plasma-state etching gas flowing from the supply pipe 54 into the chamber 24 is dispersed above the chuck table 40 by the dispersing member 68.
A pipe 70 is connected to a side wall 24a of the chamber 24, and a gas supply source (not shown) for supplying an inert gas is connected to the pipe 70. When the inert gas is supplied from the gas supply source to the chamber 24 through the pipe 70, the processing space of the chamber 24 is filled with the inert gas (internal gas). The piping 70 may be connected to the gas supply source 62c via a valve (not shown), a flow controller (not shown), or the like. In this case, the inert gas is supplied from the gas supply source 62c to the chamber 24 through the pipe 70.
The etching gas supplied from the gas supply unit 52 and subjected to plasma treatment in the supply pipe 54 is dispersed (diffused) by the dispersing member 68 provided below the supply port 54a, and supplied from above to the whole of the workpiece 11 held by the chuck table 40. As a result, the etching gas in a plasma state acts on the workpiece 11, and the workpiece 11 is processed (plasma etching) by the etching gas.
When removing processing strain and chips remaining in the workpiece 11 (device chip 33), the workpiece 11 is first carried into the processing space of the chamber 24 through the opening 24b and placed on the chuck table 40. Here, the workpiece 11 is placed on the chuck table 40 such that the tape 23 attached to the resin layer 21 contacts the upper surface of the chuck table 40, that is, the back surface 11b side faces upward.
Next, the suction pump 48 is operated. Thereby, the workpiece 11 and the like are attracted to the upper surface of the chuck table 40 by the attraction force of the attraction pump 48. In addition, a DC voltage is applied to the electrode 44 by a DC power supply 46. Thus, the workpiece 11 and the like are attracted to the chuck table 40 by the electric power applied between the electrode 44 and the workpiece 11.
After the workpiece 11 is held by the chuck table 40, an etching gas in a plasma state is supplied to the workpiece 11 from the rear surface 11b side of the workpiece 11. Specifically, first, the cover 26 is moved upward by the opening/closing mechanism 28 to close the opening 24 b. Thereby, the processing space of the chamber 24 is sealed.
The pressure reducing unit 32 is operated to reduce the pressure in the processing space of the chamber 24. In addition, an appropriate amount of inert gas may be provided to the processing space of the chamber 24 through the piping 70. In this state, the etching gas is caused to flow to the supply tube 54, and a high-frequency voltage is applied to the etching gas using the electrode 64 and the high-frequency power supply 66.
Thereby, the etching gas in a plasma state containing ions and radicals is supplied from the supply port 54a to the workpiece 11 below. Since the protective film 29 is provided on the rear surface 11b side of the workpiece 11, the protective film 29 serves as a mask layer, and the etching gas in a plasma state hardly acts on the rear surface 11b of the workpiece 11, and mainly acts on the side surface (portion serving as the groove 11 c) of the device chip 33.
When the etching gas in the plasma state acts on the side surface of the device chip 33, for example, the processing strain generated on the side surface of the device chip 33 and the periphery thereof due to the irradiation of the laser beam 31 or the like is removed. In addition, for example, debris (foreign matter) adhering to the side surface of the device chip 33 and the periphery thereof due to irradiation of the laser beam 31 or the like is removed. This can suppress the decrease in the flexural strength and the decrease in quality of the device chip 33.
In the present embodiment, since the etching gas is plasmatized outside the chamber 24, the ratio of ions in the etching gas reaching the workpiece 11 is reduced as compared with the case where the etching gas is plasmatized inside the chamber 24. Therefore, deformation of the device chip 33 associated with etching of the back surface 11b side that is easily performed by ions can be suppressed, and processing strain or chipping can be removed on the entire side surface of the device chip 33.
In addition, in the case where the workpiece 11 is cut under the condition that the processing strain or the chipping is not easily generated and in the case where the chipping can be reliably removed by the cleaning process after the use, the supply of the etching gas in the plasma state described above can be omitted in the case where the operation of the device 15, the quality of the device chip 33, or the like is not hindered by the residual processing strain or the chipping.
After removing the processing strain and the chips remaining in each device chip 33 by the etching gas in the plasma state, an external force is applied to the resin layer 21, and the resin layer 21 is divided according to the device chips 33 (resin layer dividing step). In the present embodiment, the resin layer 21 is divided by applying an external force to the resin layer 21 by expanding the belt 23. The protective film 29 remaining on the work 11 may be removed by a method such as cleaning before an external force is applied to the resin layer 21.
Fig. 8 is a cross-sectional view showing a case where the belt 23 is expanded, and fig. 9 is a cross-sectional view showing a state where the resin layer 21 is divided. In the present embodiment, the band 23 is expanded using, for example, the expansion device 72 shown in fig. 8 and 9. As shown in fig. 8 and 9, the expanding device 72 has a cylindrical drum 74, and the drum 74 has a circular opening at the upper end, which is larger than the diameter of the workpiece 11.
A plurality of rollers 76 are arranged along the circumferential direction of the drum 74 at the upper end portion of the drum 74. Further, a plurality of columnar support members 78 are disposed outside the drum 74. A cylinder (not shown) for moving (lifting) the support member 78 in the vertical direction is connected to the lower end portion of the support member 78.
The upper end portion of each support member 78 is fixed to the lower surface of an annular table 80 having a circular opening at the center. The diameter of the opening of the table 80 is larger than the diameter (outer diameter) of the drum 74, and the upper portion of the drum 74 is inserted into the opening of the table 80. An annular fixing member 82 is disposed above the table 80 and fixed to the upper surface of the table 80 with the frame 25 interposed therebetween, for example.
When the belt 23 is stretched to divide the resin layer 21, the support member 78 is first moved by an air cylinder (not shown), and the upper end of the roller 76 and the upper surface of the table 80 are disposed at substantially the same height. The frame 25 is disposed on the upper surface of the table 80, and the frame 25 is fixed to the table 80 by an annular fixing member 82 (fig. 8). At this time, the workpiece 11 is disposed so as to overlap with the opening at the upper end of the drum 74.
Then, the support member 78 is lowered by an air cylinder (not shown), and the table 80 is pulled down. A portion of the belt 23 is supported by the drum 74 and rollers 76 to maintain the height. Thus, when the frame 25 is pulled down together with the table 80, the belt 23 is pulled outward in the radial direction by the frame 25, and expands radially.
When the tape 23 is expanded, an external force is applied to the resin layer 21 to which the tape 23 is attached, toward the outside in the radial direction. As a result, the resin layer 21 breaks at the gap between the adjacent device chips 33. That is, the resin layer 21 is divided into the small pieces 21a according to the device chips 33, and the small pieces 21a of the resin layer 21 are placed on the front surface 11a side of the device chips 33 (fig. 9). Then, the device chip 33 is picked up from the tape 23 together with the die 21a and mounted on an arbitrary substrate or the like.
As described above, in the method of manufacturing a device chip according to the present embodiment, after the resin layer 21 including the uncured or semi-cured resin is formed on the front surface 11a side of the workpiece 11, the workpiece 11 is cut along the streets (lines to be cut) 13 from the rear surface 11b side of the workpiece 11, so that heat is less likely to be transferred to the resin layer 21 provided on the front surface 11a side than in the case of cutting the workpiece 11 from the front surface 11a side. This can suppress hardening of the resin layer 21 as compared with the conventional method.
In the present embodiment, the same tape 23 is used without exchanging the tape, but the tape 23 may be exchanged as needed. For example, when the belt 23 is contacted with an etching gas in a plasma state, the belt 23 may be deteriorated. Therefore, the tape 23 can be replaced after the etching gas in the plasma state is supplied.
In addition, when the tape is replaced, the replaced tape may have expansibility. That is, the tape 23 having expansibility is attached to the front surface 11a side of the work 11, and can be attached at any timing after the resin layer 21 is formed on the work 11 and before the resin layer 21 is divided.
In the case of exchanging the tape, it is not necessary to attach the tape 23 having expansibility to the front surface 11a side of the work 11. For example, the tape 23 having expansibility may be attached to the back surface 11b side of the work 11 at any timing after the work 11 is cut into the plurality of device chips 33 and before the resin layer 21 is divided. In this case, the resin layer 21 may be divided by expanding the tape 23 by the same method.
In the present embodiment, the laser beam 31 is sequentially irradiated to the plurality of streets 13 to form the grooves 11c (1 st pass), and then the laser beam 31 is irradiated so as to deepen each groove 11c, whereby the workpiece 11 is cut (2 nd and subsequent passes), but the workpiece 11 may be cut along one of the streets 13 and then the workpiece 11 may be cut along another of the streets 13.
The laser beam 31 irradiated to the workpiece 11 may be shaped so that the shape (beam profile) of the irradiated region of the workpiece 11 becomes a linear shape or a rectangular shape. In this case, for example, the longitudinal direction of the irradiated region is aligned with the width direction of the spacer 13, whereby the wide groove 11c is formed. In addition, a plurality of grooves 11c may be formed in parallel with each other for each of the spacers 13.
In the present embodiment, the protective film 29 is used as a mask layer when the etching gas in a plasma state is applied to the workpiece 11, but a mask layer formed of a photosensitive resin or the like may be used instead of the protective film 29. In the case where the influence of the etching gas on the workpiece 11 is small as in the case where the time for which the etching gas in the plasma state is applied to the workpiece 11 is sufficiently short, the etching gas in the plasma state may be applied to the workpiece 11 without using the mask layer.
(embodiment 2)
In the method of manufacturing a device chip according to the present embodiment, irradiation of the laser beam 31 and supply of the etching gas in a plasma state are combined to cut off the workpiece 11. Before cutting the workpiece 11, the resin layer 21 is formed on the front surface 11a side of the workpiece 11 in the same manner as in embodiment 1 (resin layer forming step). The tape 23 is attached to the front surface 11a side (resin layer 21) of the workpiece 11 (tape attaching step), and the protective film 29 is formed on the rear surface 11b side of the workpiece 11 (protective film forming step).
For example, after the protective film 29 is formed on the rear surface 11b side of the workpiece 11, the workpiece 11 is cut along the streets 13 from the rear surface 11b side, whereby a plurality of device chips 33 each having the device 15 are manufactured (workpiece cutting step). More specifically, first, the laser beam 31 having a wavelength absorbed by the workpiece 11 is irradiated to the workpiece 11 along the streets 13, thereby forming grooves 11c open on the rear surface 11b of the workpiece 11 (groove forming step).
In the present embodiment, the laser beam 31 (fig. 5) is irradiated onto the workpiece 11 by using the laser processing apparatus 12. The specific procedure and the like are the same as in the case of irradiating the workpiece 11 with the laser beam 31 according to embodiment 1. However, the average output of the laser beam 31, the number of times (the number of passes) of irradiating the laser beam 31 to each of the streets 13, and the like are adjusted within a range where the workpiece 11 is not cut. Fig. 10 is a cross-sectional view showing the workpiece 11 after the groove 11c is formed.
After forming the groove 11c opened in the rear surface 11b of the workpiece 11, an etching gas in a plasma state is supplied from the rear surface 11b side, whereby a portion between the front surface 11a of the workpiece 11 and the bottom of the groove 11c is removed to cut the workpiece 11 (plasma etching step).
Fig. 11 is a cross-sectional view schematically showing a plasma processing apparatus 92 different from the plasma processing apparatus 22 according to embodiment 1. In the present embodiment, for example, the plasma processing apparatus 92 shown in fig. 11 is used to supply the etching gas in a plasma state from the rear surface 11b to the workpiece 11. However, the plasma processing apparatus 22 of embodiment 1 may be used.
As shown in fig. 11, the plasma processing apparatus 92 has a chamber 94 in which a processing space is provided. An opening 94a of a size through which the workpiece 11 and the frame 25 pass is formed in a side wall of the chamber 94. A cover 96 is provided outside the opening 94a and is sized to cover the opening 94a.
An opening and closing mechanism (not shown) is connected to the cover 96, and the cover 96 is moved by the opening and closing mechanism. For example, the cover 96 is moved downward to expose the opening 94a, and the workpiece 11 can be carried into the processing space inside the chamber 94 or carried out of the processing space inside the chamber 94 through the opening 94a.
An exhaust port 94b is formed in the bottom wall of the chamber 94. The exhaust port 94b is connected to an exhaust unit 98 such as a vacuum pump. A lower electrode 100 is disposed in the space of the chamber 94. The lower electrode 100 is formed in a disk shape using a conductive material, and is connected to a high-frequency power source 102 outside the chamber 94.
A chuck table 104 is disposed on the upper surface of the lower electrode 100. The chuck table 104 has a structure in which, for example, the electrode 106a and the electrode 106b are embedded in a plate-like insulating portion, and the workpiece 11 is attracted by electric power applied between the electrode 106a and the electrode 106b and the workpiece 11.
For example, the positive electrode of the DC power supply 108a can be connected to the electrode 106a, and the negative electrode of the DC power supply 108b can be connected to the electrode 106 b. In addition, the DC power supply 108a and the DC power supply 108b may be the same DC power supply. In addition, an end portion of a suction path for transmitting suction force of a suction pump or the like may be opened on the upper surface of the chuck table 104.
An upper electrode 110 formed in a disk shape using a conductive material is attached to the upper wall of the chamber 94 via an insulating member 112. A plurality of gas ejection holes 110a are formed on the lower surface side of the upper electrode 110. The gas discharge hole 110a is connected to a gas supply source 114 via a gas supply hole 110b or the like provided on the upper surface side of the upper electrode 110. Thereby, the etching gas can be supplied from the gas supply source 114 to the processing space of the chamber 94. The upper electrode 110 is also connected to a high frequency power supply 116 outside the chamber 94.
When the etching gas in a plasma state is supplied to the rear surface 11b side of the workpiece 11, the workpiece 11 is carried into the processing space of the chamber 94 through the opening 94a and placed on the chuck table 104. Here, the workpiece 11 is placed on the chuck table 104 such that the tape 23 attached to the resin layer 21 is brought into contact with the upper surface of the chuck table 104, that is, the rear surface 11b side is directed upward.
Then, a DC voltage is applied to the electrode 106a and the electrode 106b by the DC power supply 108a and the DC power supply 108 b. Thus, the workpiece 11 and the like are attracted to the chuck table 104 by the electric power applied between the electrode 106a and the electrode 106b and the workpiece 11.
After the workpiece 11 is sucked onto the chuck table 104, an etching gas in a plasma state is supplied from the rear surface 11b side of the workpiece 11 to the workpiece 11. Specifically, first, the cover 96 is moved by the opening and closing mechanism to close the opening 94 a. Thereby, the processing space of the chamber 94 is sealed. In addition, the exhaust unit 98 is operated to depressurize the processing space of the chamber 94. In addition, an appropriate amount of inert gas may be provided to the process space.
When the high-frequency power is appropriately supplied to the lower electrode 100 and the upper electrode 110 by the high-frequency power source 102 and the high-frequency power source 116 while the etching gas is supplied from the gas supply source 114 at a predetermined flow rate in this state, a part of molecules of the etching gas existing between the lower electrode 100 and the upper electrode 110 are changed into ions and radicals.
As a result, the etching gas in a plasma state containing ions and radicals is supplied to the rear surface 11b side of the workpiece 11 held by the chuck table 104. Since the protective film 29 is provided on the rear surface 11b side of the workpiece 11, the protective film 29 serves as a mask layer, and the etching gas in a plasma state hardly acts on the rear surface 11b of the workpiece 11, mainly on the groove 11c.
When the portion between the front surface 11a of the workpiece 11 and the bottom of the groove 11c is thick to some extent, three steps of film formation, partial film removal, and groove processing may be repeated in order to properly remove the portion. For example, when a wafer formed using silicon is used as the workpiece 11, the process is performed as follows.
In the film formation step, for example, C is supplied from the gas supply source 114 at a predetermined flow rate while maintaining the pressure of the internal space of the chamber 94 4 F 8 And provides a predetermined high-frequency power to the lower electrode 100 and the upper electrode 110. Thereby, a fluorine-based material is deposited inside the groove 11c, and a thin film covering the inner surface of the groove 11c can be formed. The film pair composed of the fluorine-based material is SF 6 The ions and radicals generated for the raw material have a prescribed tolerance.
In the partial film removal step, for example, SF is supplied from the gas supply source 114 at a predetermined flow rate while maintaining the pressure in the internal space of the chamber 94 constant 6 And provides a predetermined high-frequency power to the lower electrode 100 and the upper electrode 110. Thereby, SF can be generated 6 Is the ion and free radical of the raw material. In addition, in this partial film removal step, the power supplied to the lower electrode 100 is increased as compared with the following groove processing step.
When the power supplied to the lower electrode 100 is increased, the anisotropy of etching is improved. Specifically, the portion of the film covering the groove 11c on the lower electrode 100 side (i.e., the bottom side of the groove 11 c) is preferentially processed. Namely by using SF 6 Ions and radicals generated as a raw material can be removed only from the portion of the film covering the bottom of the groove 11c covering the groove 11 c.
In the groove processing step, for example, SF is supplied from the gas supply source 114 at a predetermined flow rate while maintaining the pressure of the processing space of the chamber 94 6 Predetermined high-frequency power is supplied to the lower electrode 100 and the upper electrode 110. Thereby generating SF 6 The bottom of the groove 11c not covered with the film can be processed as ions and radicals of the material.
By repeating the three steps of film formation, partial film removal, and groove processing described above, the groove 11c can be gradually deepened, and finally the workpiece 11 can be cut along the streets 13. After the workpiece 11 is cut to obtain the plurality of device chips 33, external force is applied to the resin layer 21 in the same manner as in embodiment 1, and the resin layer 21 may be divided according to the device chips 33 (resin layer dividing step).
In the present embodiment, since the groove 11c is formed by irradiating the laser beam 31 from the rear surface 11b side and then cutting the workpiece 11 by supplying the etching gas in a plasma state from the rear surface 11b side, heat is less likely to be transferred to the resin layer 21 on the front surface 11a side than in the case where the workpiece 11 is cut by only the laser beam 31. This can more appropriately suppress hardening of the resin layer 21. The method and the like of embodiment 1 and its modification can be arbitrarily combined with the method and the like of the present embodiment.
(embodiment 3)
In the method of manufacturing a device chip according to the present embodiment, the workpiece 11 is cut by supplying the etching gas in a plasma state from the rear surface 11b side of the workpiece 11. Before cutting the workpiece 11, the resin layer 21 is formed on the front surface 11a side of the workpiece 11 in the same manner as in embodiment 1 (resin layer forming step). The tape 23 is attached to the front surface 11a side (resin layer 21) of the workpiece 11 (tape attaching step), and the protective film 29 is formed on the rear surface 11b side of the workpiece 11 (protective film forming step).
After forming the protective film 29 on the rear surface 11b side of the workpiece 11, the protective film 29 is processed to form a mask layer covering the region corresponding to the device 15 on the rear surface 11b side of the workpiece 11 (mask layer forming step). Fig. 12 is a cross-sectional view showing the workpiece 11 after the mask layer 35 is formed.
The mask layer 35 of the present embodiment is formed by the same process as that when the groove 11c is formed by embodiment 1 or embodiment 2, for example, using the laser processing device 12 described above. That is, the mask layer 35 is formed by processing the protective film 29 with the laser beam 31.
The specific procedure and the like are the same as in the case of irradiating the workpiece 11 with the laser beam 31 according to embodiment 1. However, the average output of the laser beam 31, the number of times (number of passes) of the laser beam 31, and the like are adjusted within a range where the object 11 is almost unprocessed. The rear surface 11b of the workpiece 11 may be slightly machined.
Thereby, the protective film 29 can be cut along the streets 13, and the mask layer 35 covering the region corresponding to the device 15 on the rear surface 11b side of the workpiece 11 can be formed. In the present embodiment, the protective film 29 is processed into the mask layer 35, but the mask layer 35 may be formed by processing a photosensitive resin by photolithography or the like.
After forming the mask layer 35 on the rear surface 11b of the workpiece 11, the etching gas in a plasma state is supplied from the rear surface 11b side, whereby the portion of the workpiece 11 exposed from the mask layer 35 is removed to cut the workpiece 11 (workpiece cutting step). The apparatus, process, and the like used are the same as those in the case of supplying the etching gas in the plasma state to the workpiece 11 by the above-described embodiment 2.
After the workpiece 11 is cut to obtain the plurality of device chips 33, external force is applied to the resin layer 21 in the same manner as in embodiment 1, and the resin layer 21 may be divided according to the device chips 33 (resin layer dividing step).
In the present embodiment, the mask layer 35 is formed so as to cover the region corresponding to the device 15 on the rear surface 11b side of the workpiece 11, and then the workpiece 11 is cut by supplying the etching gas in a plasma state from the rear surface 11b side of the workpiece 11 on which the mask layer 35 is formed, so that heat is less likely to be transferred to the resin layer 21 on the front surface 11a side than in the case of cutting the workpiece 11 by using the laser beam 31. This can more appropriately suppress hardening of the resin layer 21. The methods of embodiment 1, embodiment 2, and modifications thereof and the like described above can be arbitrarily combined with the method of the present embodiment and the like.
The present invention is not limited to the description of the above embodiments and modifications, and can be variously modified and implemented. For example, in the above embodiments, the workpiece 11 is cut from the rear surface 11b side using a laser beam or an etching gas in a plasma state, but the workpiece 11 may be cut from the rear surface 11b side by other methods. Specifically, the workpiece 11 may be cut from the rear surface 11b side using an annular cutting tool in which abrasive grains are dispersed in a bonding material made of resin or the like.
In addition, the structures, methods, and the like of the embodiments and the modifications described above can be modified and implemented as long as they do not depart from the scope of the object of the present invention.
Claims (9)
1. A method for manufacturing a device chip, wherein a plate-shaped object to be processed, which is provided with a device in a region on the front side divided by a line to divide, is divided by the line to divide, thereby manufacturing a device chip including the device,
the manufacturing method of the device chip comprises the following steps:
a resin layer forming step of forming a resin layer containing a resin in an uncured or semi-cured state on the front surface side of the workpiece; and
And a work cutting step of cutting the work along the predetermined dividing line from the back side of the work having the resin layer provided on the front side after the resin layer forming step, thereby manufacturing the device chip.
2. The method for manufacturing a device chip according to claim 1, wherein,
the method for manufacturing the device chip further comprises the following resin layer dividing step: after the work cutting step, an external force is applied to the resin layer, thereby dividing the resin layer according to the device chips.
3. The method for manufacturing a device chip according to claim 2, wherein,
the manufacturing method of the device chip further comprises the following tape attaching step: after the resin layer forming step and before the resin layer dividing step, a tape having expansibility is attached to the front side of the work,
in the resin layer dividing step, the resin layer is divided by expanding the tape to thereby apply an external force to the resin layer.
4. The method for manufacturing a device chip according to claim 2, wherein,
the manufacturing method of the device chip further comprises the following tape attaching step: after the work cutting step and before the resin layer dividing step, a tape having expansibility is attached to the back surface side of the work,
In the resin layer dividing step, the resin layer is divided by expanding the tape to thereby apply an external force to the resin layer.
5. The method for manufacturing a device chip according to any one of claims 1 to 4, wherein,
the manufacturing method of the device chip further comprises the following protective film forming steps: before the workpiece cutting step, a protective film is formed on the rear surface side of the workpiece.
6. The method for manufacturing a device chip according to any one of claims 1 to 5, wherein,
in the workpiece cutting step, the workpiece is cut by irradiating the workpiece with a laser beam having a wavelength absorbed by the workpiece along the predetermined dividing line.
7. The method for manufacturing a device chip as claimed in claim 6, wherein,
the manufacturing method of the device chip further comprises the following plasma etching steps: after the workpiece cutting step, an etching gas in a plasma state is supplied from the back surface side of the workpiece, thereby removing processing strain and chips remaining in the device chip.
8. The method for manufacturing a device chip according to any one of claims 1 to 5, wherein,
The workpiece cutting step includes the steps of:
a groove forming step of irradiating the object with a laser beam having a wavelength absorbed by the object along the dividing line, thereby forming a groove open on the rear surface of the object; and
and a plasma etching step of forming a groove, after which an etching gas in a plasma state is supplied from the back surface side of the workpiece, thereby removing a portion between the front surface of the workpiece and the bottom of the groove and cutting the workpiece.
9. The method for manufacturing a device chip according to any one of claims 1 to 5, wherein,
the manufacturing method of the device chip further comprises the following mask layer forming steps: before the workpiece cutting step, forming a mask layer on the workpiece to cover the region corresponding to the device on the back side of the workpiece,
in the workpiece cutting step, an etching gas in a plasma state is supplied from the back surface side of the workpiece on which the mask layer is formed, whereby the portion of the workpiece exposed from the mask layer is removed to cut the workpiece.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021194641A JP2023081007A (en) | 2021-11-30 | 2021-11-30 | Manufacturing method of device chip |
| JP2021-194641 | 2021-11-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116207042A true CN116207042A (en) | 2023-06-02 |
Family
ID=86515242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211453306.3A Pending CN116207042A (en) | 2021-11-30 | 2022-11-21 | Method for manufacturing device chip |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2023081007A (en) |
| KR (1) | KR20230081608A (en) |
| CN (1) | CN116207042A (en) |
| TW (1) | TW202324521A (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016092188A (en) | 2014-11-04 | 2016-05-23 | 積水化学工業株式会社 | Adhesive film for semiconductor wafer |
-
2021
- 2021-11-30 JP JP2021194641A patent/JP2023081007A/en active Pending
-
2022
- 2022-10-20 KR KR1020220135764A patent/KR20230081608A/en unknown
- 2022-11-21 CN CN202211453306.3A patent/CN116207042A/en active Pending
- 2022-11-25 TW TW111145201A patent/TW202324521A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP2023081007A (en) | 2023-06-09 |
| KR20230081608A (en) | 2023-06-07 |
| TW202324521A (en) | 2023-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10177004B2 (en) | Method of processing wafer | |
| TW201643957A (en) | Method of dividing wafer | |
| KR20040086725A (en) | Method for dividing semiconductor wafer | |
| CN110364481B (en) | Wafer processing method | |
| CN110364482B (en) | Wafer processing method | |
| JP2020031135A (en) | Silicon wafer processing method and plasma etching system | |
| CN116207042A (en) | Method for manufacturing device chip | |
| CN109693036B (en) | Laser processing apparatus | |
| JP7154697B2 (en) | Workpiece processing method | |
| JP2004247443A (en) | Working method of semiconductor wafer | |
| JP7353712B2 (en) | Wafer processing method | |
| KR20180004660A (en) | Wafer processing method | |
| TW202326833A (en) | Method for manufacturing device chip that prevents chip defects from occurring when device chips under manufacture are laminated and thermocompression bonded | |
| TW202316507A (en) | Manufacturing method of device chip in which a laser beam having an absorptive wavelength is irradiated onto the laminate from the front-surface side of the workpiece along the predetermined-cutting lines to form the processing grooves that cut off the laminate | |
| TW202316506A (en) | Method of manufacturing device chip including a processing groove forming step, a resin layer forming step, and a dividing step | |
| US11456213B2 (en) | Processing method of wafer | |
| JP7442927B2 (en) | Chip manufacturing method | |
| TW202345220A (en) | Manufacturing method of chips | |
| CN116230613A (en) | Method for removing support plate and method for processing plate-like member | |
| JP2023172142A (en) | Chip manufacturing method | |
| JP2021100074A (en) | Processing method for work-piece | |
| JP2024027848A (en) | Wafer processing method | |
| JP2023092654A (en) | Workpiece processing method | |
| TW202410169A (en) | Wafer processing methods | |
| JP2018081950A (en) | Wafer processing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication |