TW202324100A - Self-burn-in test system for data storage device and method thereof - Google Patents

Abstract

A self-burn-in test system for a data storage device and a method thereof are provided. The self-burn-in test system includes a test vehicle and a test machine. The self-burn-in test method includes: checking hardware settings and status of the data storage device and loading a self-burn-in firmware into the data storage device; installing the data storage device on a high and low temperature test machine through a transfer interface to initialize the self-burn-in firmware and performing a self-burn-in test; checking the hardware settings and status of the data storage device, reading results of the self-burn-in test to determine a level of the data storage device; and checking the hardware settings and status of the data storage device, loading a mass-produced firmware into the data storage device, and checking the level of the data storage device. In this way, it can be avoided that when an error occurs when loading the mass-produced firmware, the results of the self-burn-in test of the data storage device and the level of the data storage device are lost.

Description

Self-burning test system and method for data storage device

The present invention relates to a burn-in test of a data storage device, in particular to a self-burn-in test system and method for a data storage device.

Traditional data storage devices such as flash memory will load the mass-produced firmware after the self-burning test procedure is completed, but if the system is powered off while loading the mass-produced firmware, the mass-produced firmware will be loaded. When it is wrong or damaged, all the test results of the self-burn-in test program cannot be read out, and then all the test results of the self-burn-in test program will be lost.

For data storage devices loaded with mass-produced firmware, the number of damaged data blocks in the test results will affect the performance of writing data to the data storage device, the efficiency of garbage collection, and the write amplification index (Write Amplifier indicator, WAI) and the level of the data storage device affect the level of the data storage device. Therefore, a technology for accurately evaluating the level of the data storage device is needed.

The present invention provides a self-burn-in test system and method for a data storage device, which can prevent the data storage device from loading the firmware of the mass-produced version after the self-burn-in test program is completed. When the firmware is loaded incorrectly or damaged, all the test results of the self-burn-in test program will not be read out, and then all the test results of the self-burn-in test program will be lost.

The self-burn-in test method of the data storage device provided by the present invention is suitable for a self-burn-in test system. The self-burning test system includes a test vehicle and a test machine, wherein the test machine is coupled to the test vehicle. The test vehicle is loaded with a data storage device. The self-burning test method includes the following operations: the test machine checks the hardware setting and status of the data storage device through the test vehicle and loads the self-burning firmware on the data storage device; installs the data storage device at high and low temperature through the interface Initialize the self-burn-in firmware and execute the self-burn-in test on the test machine; the test machine checks the hardware settings and status of the data storage device through the test vehicle, and reads the result of the self-burn-in test to determine the status of the data storage device. level; and the test machine checks the hardware configuration and status of the data storage device through the test vehicle, loads the mass-produced firmware on the data storage device, and checks the level of the data storage device.

The self-burning test system of the data storage device provided by the present invention includes a test carrier and a test machine. The above-mentioned test carrier is used for loading the data storage device. The above test machine is coupled to the test carrier. The self-burn-in test method performed by the self-burn-in test system includes the test machine checking the hardware setting and status of the data storage device through the test vehicle and loading the self-burn-in firmware to the data storage device; installing the data storage device through the adapter interface Installed on the high and low temperature test machine to initialize the self-burn-in firmware and execute the self-burn-in test; the test machine checks the hardware setting and status of the data storage device through the test vehicle, and reads the result of the self-burn-in test to judge The level of the data storage device; and the test machine checks the hardware setting and status of the data storage device through the test vehicle, loads the mass-produced firmware on the data storage device, and checks the level of the data storage device.

The present invention changes the sequence of loading the firmware of the mass-produced version and reading the results of the self-burn-in test to determine the level of the data storage device, so that the data storage device can be prevented from being loaded into the mass-produced version after the self-burn-in test program is completed. At the same time, if the system is powered off and the mass-produced firmware is loaded incorrectly or damaged, all the test results of the self-burn-in test program will not be read out, and all the self-burn-in test program will be lost. The shortcomings of the test results.

In order to make the above and other objects, features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

Please refer to FIG. 1 , which is a schematic diagram of a self-burn-in test system provided by an embodiment of the present invention. The self-burning-in test system 1 includes a test vehicle 2 and a test machine 3, wherein the test vehicle 2 can be selectively connected to the test machine 3, and communicates with the test machine 3 through a specific communication standard, wherein the specific communication standard It may include (but not limited to) the Serial Advanced Technology Attachment (SATA) standard, the Universal Serial Bus (USB) standard, and the Peripheral Component Interconnect Express (PCIe) standard. The test carrier 2 includes a first control device 21, and one or more slots (not shown) to load the data storage device 5, when the data storage device 5 is installed in the slot, the data storage device 5 is coupled to the first control device 21. Wherein, the first control device 21 may include (but not limited to): a microprocessor (Microprocessor) or a central processing unit (Central Processing Unit, CPU). In addition, the test carrier 2 may include a read-only memory (not shown), which is used to store a program code, and the first control device 21 executes the program code to control the access of the data storage device 5 . The data storage device 5 may include (but not limited to): various embedded (embedded ) memory device. The test machine 3 includes a second control device 31 , a storage device 32 and an input/output device 33 , wherein the second control device 31 is coupled to the storage device 32 and the input/output device 33 . The storage device 32 is used for storing the self-burning test firmware and mass production version firmware of the data storage device 5, and the input and output device 33 is used for displaying relevant information of the self-burning test of the data storage device 5, and providing the tester with a The operation interface is used to operate the test machine 3 . In addition, the second control device 31 can selectively load the self-burn-in test firmware and the mass production version firmware to the data storage device 5 and classify the data storage device 5 according to the operation of the tester. Wherein the second control device 31 may include (but not limited to): a microprocessor (Microprocessor) or a central processing unit (Central Processing Unit, CPU). Storage device 32 may include (but not limited to): portable memory device (such as a memory card conforming to SD/MMC, CF, MS, XD or UFS standards), hard disk (Hard Disk Drive, HDD), solid state hard disk (solid state drive, SSD) and/or various embedded memory devices conforming to UFS and eMMC standards respectively. The input and output devices 33 may include (but not limited to): output devices such as light-emitting diode (LED) screens, cathode ray tube (CRT) screens, liquid crystal display (LCD) screens, and keyboards, mice, and/or touch panels and other input devices.

Please refer to FIGS. 2-5 , which are schematic diagrams of a data storage device 5 , a die, a storage matrix (Planes) and a super block according to an embodiment of the present invention. The data storage device 5 of the present invention includes a control unit 51 and a data storage medium 52, wherein the data storage medium 52 can be a non-volatile memory, such as flash memory, MRAM (magnetic RAM), FRAM (ferroelectric RAM), PCM ( phase-change memory), STTRAM (spin-transfer torque RAM), ReRAM (resistive RAM) or memristors that can store data for long periods of time. The data storage medium 52 may include a plurality of dies (Dies) D0, D1, D2, . . . , D(s−1). The control unit 51 enables at least one die D0, D1, D2, . . . , D(s−1) to be accessed by using a die enable (CE) pin. Each wafer D0 , D1 , D2 , . . . , D(s−1) includes a plurality of storage matrices PL0 , PL1 , PL2 , . . . , PL(t−1). Each storage matrix PL0, PL1, PL2, . . . , PL(t−1) includes a plurality of blocks (Blocks) B0, B1, B2, . . . , B(z−1). Each block B0, B1, B2, . . . , B(z-1) includes a plurality of pages P0, P1, P2, . . . , P(n-1). Each data page P0, P1, P2, . . . , P(n−1) includes a plurality of data rows having a data area and a spare area. And each super block SB0, SB1, SB2, ..., SB(z-1) is made up of blocks at the same position in each storage matrix of each wafer of the data storage medium 52, for example, the super block SB0 is composed of All storage matrices PL0, PL1, PL2, ..., PL(t-1) of each wafer D0, D1, D2, ..., D(s-1) are composed of all blocks B0, and the super block SB1 is composed of each All storage matrices PL0, PL1, PL2, ..., PL(t-1) of wafers D0, D1, D2, ..., D(s-1) are composed of all blocks B1, while other super blocks SB2, ... , SB(z-1) are composed in the same manner, so details are not repeated here. In addition, n, t, s and z in the above are all positive integers greater than 1.

Please refer to FIG. 6 , which is a flowchart of a self-burn-in testing method provided by an embodiment of the present invention. In step S1, the second control device 31 checks the hardware settings and status of the data storage device 5 through the first control device 21 of the test vehicle 2 and loads the self-burning firmware to the data storage device 5, wherein the second control device 31 The hardware settings and status of the data storage device 5 to be checked may include (but not limited to) the identification code (ID) of the data storage device 5, the number of wafers, the number of embedded multi media cards (Embedded Multi Media Card, EMMC) The hardware version and its state and function, as well as the current firmware version are aimed at checking whether the hardware and function of the data storage device 5 are normal. Then, the second control device 31 loads the self-burning machine firmware in the data storage device 5, wherein the tester can execute the action of loading the self-burning machine firmware in the data storage device 5 through the user interface displayed on the input and output device 33 To set parameters for the self-burning firmware, such as how many loops to execute, whether to retest, etc.

In step S3, the data storage device 5 is installed on a high and low temperature test machine (not shown) through an adapter interface (not shown) to initialize the self-burning machine firmware and perform a self-burning machine test, wherein the adapter interface It is a multi-port circuit board used to install multiple data storage devices 5, and the definition of initialization is that the high and low temperature test machine provides power to the data storage device 5 through the transfer interface, provides a clock signal to the data storage device 5, and makes the data The storage device 5 enters the power-on mode. Thereby, the self-burn-in test is performed on the data storage device 5 to record the result of the self-burn-in test of the data storage device 5 . In addition, it can be noted that the result of the self-burning test of the data storage device 5 will be stored in a block of the data storage device 5, so that the data storage device 5 can be removed from the adapter interface and replaced after the self-burning test of the data storage device 5 is completed. When reinstalled on the slot of the test carrier 2 , the second control device 31 can read the result of the self-burn-in test through the first control device 21 .

In step S5, the second control device 31 checks the hardware setting and status of the data storage device 5 through the first control device 21 of the test vehicle 2, reads the result of the self-burn-in test to determine the grade of the data storage device 5, Wherein the result of the self-burning test includes the numbers of all damaged blocks in the data storage device 5 . Then, the second control device 31 can calculate the total number of damaged blocks in the data storage device 5 according to the numbers of all damaged blocks in the data storage device 5 , and judge the level of the data storage device 5 accordingly. In another embodiment, the second control device 31 can calculate the total number of damaged blocks in each storage matrix of each wafer in the data storage device 5 according to the numbers of all damaged blocks in the data storage device 5, and then calculate The total number of damaged super blocks of the data storage device 5 is used to determine the level of the data storage device 5 .

Finally, in step S7, the second control device 31 checks the hardware settings and status of the data storage device 5 through the first control device 21 of the test vehicle 2, loads the mass production version firmware to the data storage device 5, and checks the data The level of the storage device 5, wherein the hardware setting, status and level of the data storage device 5 checked by the second control device 31 is aimed at confirming whether the hardware setting, status and level of the data storage device 5 are correct.

Please refer to FIG. 7 , which is a flow chart of reading the result of the self-burn-in test to determine the level of the data storage device according to an embodiment of the present invention. The second control device 31 in step S5 reads the result of the self-burning test to determine the level of the data storage device 5 including the following operations: In step S11, the second control device 31 determines the total number of damaged blocks in the data storage device 5 Whether the amount is less than or equal to the first critical value, wherein the total number of damaged blocks in the data storage device 5 is equal to the number of newly added damaged blocks after the self-burning test of the data storage device 5 plus the number of damaged blocks when the data storage device 5 leaves the factory The number of corrupt blocks. It should be noted that those skilled in the art can define the value of the first critical value according to the hardware and manufacturing process of the data storage device 5 .

In step S13, when it is judged that the total number of damaged blocks in the data storage device 5 is less than or equal to the first critical value, it is determined whether the number of damaged blocks newly added after the self-burning test of the data storage device 5 is less than or equal to Second critical value. Preferably, the second critical value is 0, that is, the number of newly added damaged blocks after the self-burning test of the data storage device 5 is preferably 0, and the total number of damaged blocks in the data storage device 5 only includes data The number of damaged blocks when the storage device 5 leaves the factory. It should be noted that those skilled in the art can define the value of the second critical value according to the hardware and manufacturing process of the data storage device 5 , so the present application is not limited to the above value.

In step S15, when it is determined that the number of damaged blocks added after the self-burning test of the data storage device 5 is less than or equal to the second threshold value, it is determined that the data storage device 5 belongs to the first level. That is, when it is judged that the data storage device 5 belongs to the first level, it means that the total number of damaged blocks of the data storage device 5 is the least, so that the efficiency of writing data to the data storage device 5 can be improved, and the garbage collection efficiency can be improved. Efficiency, and reduced Write Amplification Indicator (WAI) efficacy.

In step S17, when it is determined that the number of damaged blocks added after the self-burning test of the data storage device 5 is greater than the second threshold, it is determined that the data storage device 5 belongs to the second level. That is, compared with the data storage device 5 of the first level, the data storage device 5 of the second level has more damaged blocks, so the performance of writing data to the data storage device 5 of the second level, the efficiency of garbage collection, etc. Efficiency, and Write Amplification Index (WAI) are less effective.

In step S19, when it is judged that the total number of damaged blocks in the data storage device 5 is greater than the first critical value, it is judged whether the number of damaged blocks added after the self-burning test of the data storage device 5 is less than or equal to the second critical value. critical value.

In step S21, when it is determined that the number of damaged blocks added after the self-burning test of the data storage device 5 is less than or equal to the second threshold value, it is determined that the data storage device 5 belongs to the third level. That is, compared with the data storage device 5 of the second level, the data storage device 5 of the third level has more damaged blocks, so the performance of writing data to the data storage device 5 of the third level, the efficiency of garbage collection, etc. Efficiency, and Write Amplification Index (WAI) are less effective.

In step S23, when it is determined that the number of damaged blocks newly added after the self-burning test of the data storage device 5 is greater than the second threshold value, it is determined that the data storage device 5 belongs to the fourth level. That is, compared with the data storage device 5 of the third level, the data storage device 5 of the fourth level has more damaged blocks, so the performance of writing data to the data storage device 5 of the fourth level, the efficiency of garbage collection, etc. Efficiency, and Write Amplification Index (WAI) are less effective.

Please refer to FIG. 8 , which is a flow chart of reading the result of the self-burn-in test to determine the level of the data storage device according to another embodiment of the present invention. The second control device 31 in step S5 reads the result of the self-burning test to determine the level of the data storage device 5 including the following operations: In step S31, the second control device 31 judges the status of the damaged super block in the data storage device 5 Whether the total quantity is less than or equal to the third critical value. It should be noted that those skilled in the art can define the value of the third critical value according to the hardware and manufacturing process of the data storage device 5 .

In one embodiment, when a block is judged as a damaged block, the superblock including the damaged block is also judged as a damaged superblock. The total number of damaged superblocks in the data storage device 5 is the number of damaged superblocks excluding the number of good superblocks combined with good blocks of different storage matrices of all damaged superblocks. Taking FIG. 9 as an example, it is assumed that the data storage device 5 includes two wafers D0 and D1, each wafer includes two storage matrices PL0 and PL1, and the result of the self-burning test of the data storage device 5 includes 3 superblocks. damaged superblocks SB(i), SB(i+1), SB(i+2), while three damaged superblocks SB(i), SB(i+1), SB(i+2) contains good blocks G1-G7 and damaged blocks B1-B5, the control device 4 respectively selects good blocks in different storage matrices such as (G1, G2, G5, G3), (G6, G2, G5, G3) , (G1, G4, G5, G3), (G6, G4, G5, G3), (G1, G2, G7, G3), (G6, G2, G7, G3), (G1, G4, G7, G3) and (G6, G4, G7, G3) to form a good super block. That is to say, the original number of damaged super blocks is 3, and the good blocks in different storage matrices in these 3 damaged super blocks can form a good super block, so the total number of damaged super blocks is 3-1=2 damaged superblocks.

In another embodiment, the total number of damaged super blocks in the data storage device 5 is equal to the maximum number of damaged blocks in each storage matrix in each die. Specifically, the second control device 31 can find out a storage matrix with the largest number of damaged blocks according to the numbers of the damaged blocks, and use the number of damaged blocks in the storage matrix as the total number of damaged super blocks. Taking FIG. 9 as an example, three damaged super blocks SB(i), SB(i+1), and SB(i+2) respectively contain good blocks G1-G7 and damaged blocks B1-B5. The second control device 31 selects the storage matrix with the most damaged blocks according to the numbers of the damaged blocks, such as the storage matrix PL1 in the wafer D1 has 2 damaged blocks B3 and B5, to obtain the number of damaged blocks in the storage matrix PL1 The number is taken as the total number of damaged superblocks, that is, 2 damaged superblocks.

Next, as shown in Figure 8, in step S33, when it is judged that the total number of damaged superblocks in the data storage device 5 is less than or equal to the third critical value, it is judged that the data storage device 5 newly added after the self-burning test Whether the number of damaged blocks is less than or equal to the second critical value. Preferably, the second critical value is zero. It should be noted that those skilled in the art can define the value of the second critical value according to the hardware and manufacturing process of the data storage device 5 , so the present application is not limited to the above value.

In step S35, when it is determined that the number of damaged blocks added after the self-burning test of the data storage device 5 is less than or equal to the second threshold value, it is determined that the data storage device 5 belongs to the first level. That is, when it is judged that the data storage device 5 belongs to the first level, it means that the total number of damaged blocks of the data storage device 5 is the least, so that the efficiency of writing data to the data storage device 5 can be improved, and the garbage collection efficiency can be improved. Efficiency, and reduced Write Amplification Indicator (WAI) efficacy.

In step S37, when it is determined that the number of damaged blocks added after the self-burning test of the data storage device 5 is greater than the second threshold value, it is determined that the data storage device 5 belongs to the second level. That is, compared with the data storage device 5 of the first level, the data storage device 5 of the second level has more damaged blocks, so the performance of writing data to the data storage device 5 of the second level, the efficiency of garbage collection, etc. Efficiency, and Write Amplification Index (WAI) are less effective.

In step S39, when it is judged that the total number of damaged super blocks in the data storage device 5 is greater than the third critical value, it is judged whether the number of damaged blocks added after the self-burning test of the data storage device 5 is less than or equal to the third critical value Two critical values.

In step S41, when it is determined that the number of damaged blocks added after the self-burning test of the data storage device 5 is less than or equal to the second threshold value, it is determined that the data storage device 5 belongs to the third level. That is, compared with the data storage device 5 of the second level, the data storage device 5 of the third level has more damaged blocks, so the performance of writing data to the data storage device 5 of the third level, the efficiency of garbage collection, etc. Efficiency, and Write Amplification Index (WAI) are less effective.

In step S43, when it is determined that the number of damaged blocks added after the self-burning test of the data storage device 5 is greater than the second threshold value, it is determined that the data storage device 5 belongs to the fourth level. That is, compared with the data storage device 5 of the third level, the data storage device 5 of the fourth level has more damaged blocks, so the performance of writing data to the data storage device 5 of the fourth level, the efficiency of garbage collection, etc. Efficiency, and Write Amplification Index (WAI) are less effective.

To sum up, the present invention changes the sequence of loading the mass-produced firmware and reading the results of the self-burn-in test to determine the level of the data storage device, so that the data storage device can be prevented from being damaged after the self-burn-in test program is completed. When loading the mass-produced firmware, if the system is powered off and the mass-produced firmware is loaded incorrectly or damaged, all the test results of the self-burning test program will not be read out, and the self- All test results of the burn-in test program are flawed. At the same time, the present invention also provides a method for accurately judging the number of damaged super blocks and damaged blocks to improve the efficiency of writing data to the data storage device, the efficiency of garbage collection, and reduce the performance of the Write Amplifier Indicator (WAI). effect, and at the same time classify the data storage device.

Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field of the present invention can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be defined by the scope of the appended patent application.

1: Self-burning test system 2: Test vehicle 3: Test machine 5: Data storage device 21: First control device 31: Second control device 32: storage device 33: Input and output device 51: Control unit 52: data storage medium G1, G2, G3, G4, G5, G6, G7: Good blocks G1-G7 B1, B2, B3, B4, B5: Corrupted blocks SB(i), SB(i+1), SB(i+2): damaged superblock D0, D1, D2, ..., D(s-1): Wafer PL0, PL1, PL2, ..., PL(t-1): storage matrix B0, B1, B2, ..., B(z-1): block P0, P1, P2, ..., P(n-1): data page SB0, SB1, SB2, ..., SB(z-1): super block S1, S3, S5, S7, S11, S13, S15, S17, S19, S21, S23, S31, S33, S35, S37, S39, S41, S43: Steps

FIG. 1 is a schematic diagram of a self-burn-in test system provided by an embodiment of the present invention; FIG. 2 is a schematic diagram of a data storage device provided by an embodiment of the present invention; FIG. 3 is a schematic diagram of a wafer provided by an embodiment of the present invention; FIG. 4 is a schematic diagram of a storage matrix provided by an embodiment of the present invention; FIG. 5 is a schematic diagram of a super block provided by an embodiment of the present invention; FIG. 6 is a flow chart of a self-burn-in testing method provided by an embodiment of the present invention; FIG. 7 is a flow chart of reading the result of the self-burn-in test to determine the level of the data storage device according to an embodiment of the present invention; FIG. 8 is a flow chart of reading the result of the self-burn-in test to determine the level of the data storage device according to another embodiment of the present invention; and FIG. 9 is a schematic diagram of calculating the total number of damaged superblocks in a data storage device according to an embodiment of the present invention.

S1, S3, S5, S7: steps

Claims (24)

A self-burn-in test method for a data storage device is applicable to a self-burn-in test system, the self-burn-in test system includes a test carrier and a test machine, wherein the test machine is coupled to the test carrier, the The test vehicle is loaded with the data storage device, and the self-burning test method includes the following operations: The test machine checks a hardware setting and status of the data storage device through the test carrier and loads a self-burning firmware on the data storage device; installing the data storage device on a high and low temperature test machine through an adapter interface to initialize the self-burning firmware and perform a self-burning test; The test machine checks the hardware setting and status of the data storage device through the test carrier, and reads the result of the self-burning test to determine a level of the data storage device; and The test machine checks the hardware setting and status of the data storage device through the test carrier, loads a mass-produced version of firmware on the data storage device, and checks the level of the data storage device. The self-burn-in test method as described in Claim 1, wherein reading the result of the self-burn-in test to determine the level of the data storage device includes: judging whether the total number of damaged blocks in the data storage device is less than or equal to a first threshold; When it is judged that the total number of the damaged blocks in the data storage device is less than or equal to the first critical value, it is determined whether the number of the damaged blocks added after the self-burning test is less than or equal to a second critical value ;as well as When it is judged that the number of the damaged blocks added after the self-burning test is less than or equal to the second critical value, it is judged that the data storage device belongs to a first level; Wherein the total number of the damaged blocks in the data storage device is equal to the number of the damaged blocks added after the self-burning test plus the number of the damaged blocks when the data storage device leaves the factory. The self-burn-in test method as described in Claim 2, wherein reading the result of the self-burn-in test to determine the level of the data storage device includes: When it is determined that the number of damaged blocks newly added after the self-burning test is greater than the second critical value, it is determined that the data storage device belongs to a second level. The self-burn-in test method as described in claim 3, wherein reading the result of the self-burn-in test to determine the level of the data storage device includes: When it is judged that the total number of the damaged blocks in the data storage device is greater than the first critical value, it is judged whether the number of the damaged blocks added after the self-burning test is less than or equal to the second critical value; and When it is determined that the number of the damaged blocks added after the self-burning test is less than or equal to the second critical value, it is determined that the data storage device belongs to a third level. The self-burn-in test method as described in claim 4, wherein reading the result of the self-burn-in test to determine the level of the data storage device includes: When it is determined that the number of the damaged blocks newly added after the self-burning test is greater than the second critical value, it is determined that the data storage device belongs to a fourth level. The self-burning-in test method according to claim 2, wherein the second critical value is 0. The self-burn-in test method as described in Claim 1, wherein reading the result of the self-burn-in test to determine the level of the data storage device includes: judging whether the total number of damaged superblocks in the data storage device is less than or equal to a first threshold; When it is determined that the total number of damaged super blocks in the data storage device is less than or equal to the first threshold, it is determined whether the number of newly added damaged blocks after the self-burning test is less than or equal to a second critical value ;as well as When it is determined that the number of damaged blocks newly added after the self-burning test is less than or equal to the second critical value, it is determined that the data storage device belongs to a first level. The self-burn-in test method as described in Claim 7, wherein reading the result of the self-burn-in test to determine the level of the data storage device includes: When it is determined that the number of the damaged blocks added after the self-burning test is greater than the second critical value, it is determined that the data storage device belongs to a second level. The self-burn-in test method as described in Claim 8, wherein reading the result of the self-burn-in test to determine the level of the data storage device includes: When it is judged that the total number of the damaged super blocks in the data storage device is greater than the first critical value, it is judged whether the number of the damaged blocks added after the self-burning test is less than or equal to the second critical value; as well as When it is determined that the number of damaged blocks added after the self-burning test is less than or equal to the second critical value, it is determined that the data storage device belongs to a third level. The self-burn-in test method as described in Claim 9, wherein reading the result of the self-burn-in test to determine the level of the data storage device includes: When it is determined that the number of the damaged blocks newly added after the self-burning test is greater than the second critical value, it is determined that the data storage device belongs to a fourth level. The self-burning machine test method as described in claim 7, wherein the total number of the damaged super blocks in the data storage device is the number of the damaged super blocks excluded from the good of all the different storage matrices of the damaged super blocks The number of good superblocks the block is composed of. The self-burning machine test method as described in claim 7, wherein the total number of the damaged super blocks in the data storage device is equal to the maximum number of the damaged blocks that a storage matrix has in all the damaged super blocks . A self-burning test system of a data storage device, comprising: a test vehicle for loading the data storage device; and a test machine, coupled to the test carrier; Wherein the self-burn-in test method performed by the self-burn-in test system includes: The test machine checks a hardware setting and state of the data storage device through the test carrier and loads a self-burning firmware on the data storage device; installing the data storage device on a high and low temperature test machine through an adapter interface to initialize the self-burning firmware and perform a self-burning test; The test machine checks the hardware setting and status of the data storage device through the test carrier, reads the result of the self-burning test to determine a level of the data storage device; and The test machine checks the hardware configuration and status of the data storage device through the test carrier, loads a mass production version of firmware on the data storage device, and checks the level of the data storage device. The self-burn-in test system as described in claim 13, wherein reading the result of the self-burn-in test to determine the level of the data storage device includes: judging whether the total number of damaged blocks in the data storage device is less than or equal to a first threshold; When it is judged that the total number of the damaged blocks in the data storage device is less than or equal to the first critical value, it is determined whether the number of the damaged blocks added after the self-burning test is less than or equal to a second critical value ;as well as When it is judged that the number of the damaged blocks added after the self-burning test is less than or equal to the second critical value, it is judged that the data storage device belongs to a first level; Wherein the total number of the damaged blocks in the data storage device is equal to the number of the damaged blocks added after the self-burning test plus the number of the damaged blocks when the data storage device leaves the factory. The self-burn-in test system as described in claim 14, wherein reading the result of the self-burn-in test to determine the level of the data storage device includes: When it is determined that the number of damaged blocks newly added after the self-burning test is greater than the second critical value, it is determined that the data storage device belongs to a second level. The self-burn-in test system as described in claim 15, wherein reading the result of the self-burn-in test to judge the level of the data storage device includes: When it is judged that the total number of the damaged blocks in the data storage device is greater than the first critical value, it is judged whether the number of the damaged blocks added after the self-burning test is less than or equal to the second critical value; and When it is determined that the number of the damaged blocks added after the self-burning test is less than or equal to the second critical value, it is determined that the data storage device belongs to a third level. The self-burn-in test system as described in claim 16, wherein reading the result of the self-burn-in test to determine the level of the data storage device includes: When it is determined that the number of the damaged blocks newly added after the self-burning test is greater than the second critical value, it is determined that the data storage device belongs to a fourth level. The self-burning-in test system according to claim 14, wherein the second critical value is zero. The self-burn-in test system as described in claim 13, wherein reading the result of the self-burn-in test to determine the level of the data storage device includes: judging whether the total number of damaged superblocks in the data storage device is less than or equal to a first threshold; When it is determined that the total number of damaged super blocks in the data storage device is less than or equal to the first threshold, it is determined whether the number of newly added damaged blocks after the self-burning test is less than or equal to a second critical value ;as well as When it is determined that the number of the damaged blocks added after the self-burning test is less than or equal to the second critical value, it is determined that the data storage device belongs to a first level. The self-burn-in test system as described in claim 19, wherein reading the result of the self-burn-in test to determine the level of the data storage device includes: When it is determined that the number of the damaged blocks added after the self-burning test is greater than the second critical value, it is determined that the data storage device belongs to a second level. The self-burn-in test system as described in claim 20, wherein reading the result of the self-burn-in test to determine the level of the data storage device includes: When it is judged that the total number of the damaged super blocks in the data storage device is greater than the first critical value, it is judged whether the number of the damaged blocks added after the self-burning test is less than or equal to the second critical value; as well as When it is determined that the number of the damaged blocks added after the self-burning test is less than or equal to the second critical value, it is determined that the data storage device belongs to a third level. The self-burn-in test system as described in claim 21, wherein reading the result of the self-burn-in test to determine the level of the data storage device includes: When it is determined that the number of the damaged blocks newly added after the self-burning test is greater than the second critical value, it is determined that the data storage device belongs to a fourth level. The self-burning machine test system as described in claim 19, wherein the total number of the damaged super blocks in the data storage device is the number of the damaged super blocks excluded from all the different storage matrices of the damaged super blocks. The number of good superblocks the block is composed of. The self-burning machine test system as described in claim 19, wherein the total number of the damaged super blocks in the data storage device is equal to the maximum number of the damaged blocks that a storage matrix has in all the damaged super blocks .

Images