TW202318886A - Separated microelectromechanical system microphone structure and manufacturing method thereof - Google Patents

Abstract

A separated microelectromechanical system microphone structure and a manufacturing method thereof are provided. Substrate is made through process combination of bonding, opening, pressing film, copper etching, solder mask and molding. Isolation layer is set on substrate. ASIC is placed on substrate by dispensing, MEMS is placed at second through hole of substrate through dispensing. Closed space is surrounded by substrate, isolation layer, cover and MEMS to form a closed chamber. Therefore, the efficiency of providing MEMS to form closed chamber structure may be achieved.

Description

Divided MEMS Microphone Structure and Manufacturing Method

A Micro-Electro-Mechanical System microphone structure and a manufacturing method thereof, in particular to a Micro-Electro-Mechanical System microphone structure and a manufacturing method thereof that provide a micro-electro-mechanical system crystal grain to form a closed cavity structure.

MEMS grain is a sensor or actuator using Aluminum Nitride (AlN) as a piezoelectric material. It is constantly developing in the direction of miniaturization and integration. cut costs. The aluminum nitride material not only has good thermal conductivity and high dielectric constant, but also is compatible with the Complementary Metal-Oxide-Semiconductor (CMOS) process; the aluminum nitride MEMS grain not only It has high electrical characteristics, good mechanical properties and optical transmission characteristics, simple manufacturing process and low cost, so it is widely used in industry and medicine. The current industrial and commercial applications include thin film bulk acoustic resonators, ultrasonic sensors, piezoelectric transducers, etc.

For the compact and complex aluminum nitride MEMS grain, it is necessary to protect the movable parts inside the grain to ensure the high performance index of the grain. In order to avoid long-term exposure to complex working environments, subsequent integrated packaging is also extremely important. At present, the main integrated packaging technology solutions are: InvenSense Company of the United States proposed a MEMS-IC monolithic micro-electromechanical system wafer-level vacuum packaging technical solution, using thin-film bulk acoustic wave grains, ultrasonic sensors, etc. as substrates, Application-specific integrated circuit (Application Specific Integrated Circuit, ASIC) signal processing integrated circuit (Integrated Circuit, IC) is stacked on it and interconnected through silicon crystal via (Through-Silicon Via, TSV) technology in its body to realize signal extraction. In recent years, most enterprises and research institutions have adopted Post-CMOS single-chip integrated technology, which is widely used in subsequent mass production manufacturing. The production of crystal grains realizes the monolithic integrated micro-electro-mechanical system. In 1960, IBM developed the flip-chip packaging technology. Generally, an array of solder joints is made on the front of the chip as input and output terminals and welded on the packaging substrate in an upside-down manner. The bottom filling organic material is used to stabilize the welding and bonding process.

However, wafer-level vacuum packaging technology based on through-silicon via technology is highly complex and has a great impact on the design of integrated circuits. The area of specific application-specific integrated circuits and MEMS grains needs to be consistent, and integrated circuit technology is proportional to The shrinking speed is much faster than that of MEMS technology, and requiring the same grain area of the two will lead to waste of grain area and increased cost. Although the Post-CMOS monolithic integration technology has low requirements on the CMOS process, it will have a greater impact on the CMOS circuit when processing aluminum nitride MEMS grains at high temperatures. Flip-chip technology cannot form AlN MEMS die into a closed-cavity structure.

To sum up, it can be known that there has been a problem in the prior art for a long time that flip-chip technology cannot form MEMS grains into a closed cavity structure, so it is necessary to propose improved technical means to solve this problem.

In view of the problem in the prior art that flip-chip technology cannot form MEMS grains into a closed chamber structure, the present invention discloses a partitioned MEMS microphone structure and its manufacturing method, wherein:

The isolated micro-electro-mechanical system microphone structure disclosed in the first embodiment of the present invention includes: a substrate, an isolation layer, an application specific integrated circuit (Application Specific Integrated Circuit, ASIC) grain, a micro-electro-mechanical system (Micro Electro Mechanical Systems, MEMS) die and the outer cover, the substrate further includes: a bottom plate, a first side plate, a second side plate and a cover plate.

The bottom plate is embedded with power lines and ground lines, and the power lines and ground lines are exposed on the bottom surface of the bottom plate as power external contacts and ground external contacts; the first side plate is stacked on one end of the bottom plate, and the first side plate is embedded with power lines and ground lines ; The second side plate is stacked on the other end of the bottom plate, and the second side plate is embedded with power lines and grounding lines; and the cover plate is stacked on the first side plate and the second side plate, and the bottom plate, the first side plate, the second side plate and the cover plate An internal space is formed between them, the cover plate is interposed between the first side plate and the second side plate to open a first through hole and a second through hole, the internal space communicates with the external space through the first through hole and the second through hole, and the cover The board is respectively embedded with power lines and ground lines, and the power lines and ground lines are exposed on the top surface of the cover plate as power contacts and ground contacts.

The isolation layer is stacked and formed on the substrate between the first through hole and the second through hole, and the space on one side of the isolation layer is defined as the first isolation space and the space on the other side of the isolation layer is defined as the second isolation space; Application-specific integrated circuit chips are placed on the cover plate by dispensing glue and located in the first isolation space. Application-specific integrated circuit chips are electrically connected to power contacts and ground contacts respectively through wire bonding technology; MEMS chips The microelectromechanical system die is electrically connected to the power contact and the ground contact through the bonding method at the second through hole by dispensing; and the outer cover is covered on the cover plate and the isolation layer, and the outer cover and the ground contact To form an electrical connection, the outer cover has openings relative to the microelectromechanical system grains, and the enclosed space is surrounded by the substrate, isolation layer, outer cover, and microelectromechanical system grains to form a closed chamber. The substrate, isolation layer, outer The lid and the MEMS die surround the open space forming an open chamber.

The isolated micro-electro-mechanical system microphone structure disclosed in the second embodiment of the present invention includes: a substrate, an isolation layer, an application-specific integrated circuit die, a micro-electro-mechanical system die, and an outer cover. The substrate further includes: a bottom plate, a first A side panel, a second side panel and a cover panel.

The bottom plate is embedded with power lines and ground lines, and the power lines and ground lines are exposed on the bottom surface of the bottom plate as power external contacts and ground external contacts; the first side plate is stacked on one end of the bottom plate, and the first side plate is embedded with power lines and ground lines ; The second side plate is stacked on the other end of the bottom plate, and the second side plate is embedded with power lines and grounding lines; and the cover plate is stacked on the first side plate and the second side plate, and the bottom plate, the first side plate, the second side plate and the cover plate An internal space is formed between them, the cover plate is interposed between the first side plate and the second side plate to open a first through hole and a second through hole, the internal space communicates with the external space through the first through hole and the second through hole, and the cover The board is respectively embedded with power lines and ground lines, and the power lines and ground lines are exposed on the top surface of the cover plate as power contacts and ground contacts.

Application-specific IC dies are placed on the cover plate through glue dispensing, and application-specific IC dies are electrically connected to power contacts and ground contacts through wire bonding technology; MEMS dies are disposed through glue dispensing At the second through hole, the microelectromechanical system chip is electrically connected to the power contact and the ground contact through wire bonding technology; the isolation layer is stacked and attached to the micro electromechanical system chip, and the isolation layer presents a hollow ring shape; and the outer The cover is covered on the cover plate and the isolation layer, the outer cover and the isolation layer are attached to each other, the outer cover is electrically connected to the ground contact, and the outer cover is provided with an opening relative to the isolation layer. The closed space is surrounded by the cap and the microelectromechanical system grains to form a closed chamber, and the hollow ring and the opening of the isolation layer form an open chamber.

The isolated MEMS microphone structure disclosed in the third embodiment of the present invention includes: a substrate, an application-specific integrated circuit chip, a MEMS chip, an isolation layer, and an outer cover.

The substrate is provided with conduction grooves, and the substrate is embedded with power lines and ground lines, and the power lines and ground lines exposed on the bottom surface of the substrate are power external contacts and ground external contacts, and the power lines and ground lines exposed on the top surface of the substrate are power contacts and Ground contact; application-specific integrated circuit dies are placed on the substrate through dispensing, and application-specific integrated circuit dies are electrically connected to power contacts and ground contacts through wire bonding technology; micro-electromechanical system dies pass through points Glue is set at the conduction groove, and the MEMS die is electrically connected to the power contact and the ground contact through wire bonding technology; the isolation layer is stacked and attached to the MEMS die, and the isolation layer presents a hollow ring shape; and The outer cover is covered on the substrate and the isolation layer, the outer cover and the isolation layer are attached to each other, the outer cover is electrically connected to the ground contact, and the outer cover is provided with an opening relative to the isolation layer. The closed space is surrounded by the cap and the microelectromechanical system grains to form a closed chamber, and the hollow ring and the opening of the isolation layer form an open chamber.

The manufacturing method of the separated MEMS microphone structure disclosed in the first embodiment of the present invention includes the following steps:

Firstly, the base plate is made through the process combination of bonding, opening, film pressing, copper etching, solder resist and forming. The base plate is stacked by the bottom plate, the first side plate, the second side plate and the cover plate; then, the first side plate On one end of the base plate, the second side plate is stacked on the other end of the base plate; then, the cover plate is stacked on the first side plate and the second side plate, and an inner space is formed between the base plate, the first side plate, the second side plate and the cover plate, The cover plate is provided with a first through hole and a second through hole between the first side plate and the second side plate, and the internal space communicates with the external space through the first through hole and the second through hole; then, the bottom plate is embedded with a power supply Lines and grounding lines, and the power lines and grounding lines are exposed on the bottom of the bottom plate as power external contacts and grounding external contacts; then, the first side plate is embedded with power lines and grounding lines, and the second side plate is embedded with power lines and grounding lines ; Then, the cover plate is respectively embedded with a power line and a grounding line, the power line is exposed on the top surface of the cover plate as a power contact and the grounding line is exposed on the top surface of the cover plate as a grounding contact; then, in the first through hole and the second Two through holes are stacked on the substrate to form an isolation layer, the space on one side of the isolation layer is defined as the first isolation space and the space on the other side of the isolation layer is defined as the second isolation space; then, the application-specific integrated circuit chip The chips are placed on the cover plate by dispensing glue and located in the first isolation space. The application-specific integrated circuit chips are electrically connected to the power contact and the ground contact respectively through wire bonding technology; The method is arranged at the second through hole, and the microelectromechanical system die is electrically connected to the power contact and the ground contact through wire bonding technology; then, the outer cover is covered on the cover plate and the isolation layer, and the outer cover and the ground contact form an electrical connection. The outer cover has openings relative to the microelectromechanical system grains; finally, the enclosed space is surrounded by the substrate, isolation layer, outer cover, and microelectromechanical system grains to form a closed chamber, which is composed of the substrate, isolation layer, outer The lid and the MEMS die surround the open space forming an open chamber.

The manufacturing method of the separated MEMS microphone structure disclosed in the second embodiment of the present invention includes the following steps:

Firstly, the base plate is made through the process combination of bonding, opening, film pressing, copper etching, solder resist and forming. The base plate is stacked by the bottom plate, the first side plate, the second side plate and the cover plate; then, the first side plate On one end of the base plate, the second side plate is stacked on the other end of the base plate; then, the cover plate is stacked on the first side plate and the second side plate, and an inner space is formed between the base plate, the first side plate, the second side plate and the cover plate, The cover plate is provided with a first through hole and a second through hole between the first side plate and the second side plate, and the internal space communicates with the external space through the first through hole and the second through hole; then, the bottom plate is embedded with a power supply Lines and grounding lines, and the power lines and grounding lines are exposed on the bottom of the bottom plate as power external contacts and grounding external contacts; then, the first side plate is embedded with power lines and grounding lines, and the second side plate is embedded with power lines and grounding lines ; Next, the cover plate is respectively embedded with a power line and a ground line, the power line exposed on the top surface of the cover plate is a power contact and the ground line exposed on the top surface of the cover plate is a ground contact; then, the application-specific integrated circuit die The application-specific integrated circuit die is electrically connected to the power contact and the ground contact through wire-bonding technology on the cover plate through dispensing; then, the MEMS die is disposed on the second through hole through dispensing At the position, the microelectromechanical system die is electrically connected to the power contact and the ground contact through wire bonding technology; then, the isolation layer is stacked and attached to the micro electromechanical system die, and the isolation layer presents a hollow ring shape; then, the outer cover covers On the cover plate and the isolation layer, the outer cover and the isolation layer are attached to each other, the outer cover is electrically connected to the ground contact, and the outer cover is provided with an opening relative to the isolation layer; finally, the substrate, the isolation layer, the outer The closed space is surrounded by the cap and the microelectromechanical system grains to form a closed chamber, and the hollow ring and the opening of the isolation layer form an open chamber.

The manufacturing method of the separated MEMS microphone structure disclosed in the third embodiment of the present invention includes the following steps:

Firstly, through the process combination of bonding, drilling, laminating, copper etching, solder resist and forming, a substrate with conduction grooves is formed. The substrate is embedded with power lines and ground lines, and the power lines and ground lines are exposed on the substrate. The bottom surface is the power external contact point and the ground external contact point, and the power line and the ground line are exposed on the top surface of the substrate as the power contact point and the ground contact point. The bulk circuit die is electrically connected to the power contact and the ground contact respectively through wire bonding technology; then, the MEMS die is placed on the conduction groove through dispensing, and the MEMS die is electrically connected to the power supply through wire bonding technology contacts and grounding contacts; then, the isolation layer is stacked and attached to the microelectromechanical system die, and the isolation layer presents a hollow ring shape; then, the outer cover is covered on the substrate and the isolation layer, and the outer cover and the isolation layer are attached to each other Closed, the outer cover is electrically connected to the ground contact, and the outer cover has an opening relative to the isolation layer; finally, the enclosed space is surrounded by the substrate, isolation layer, outer cover, and MEMS grains to form a closed chamber. The hollow ring and the openings of the isolation layer form an open chamber.

The structure disclosed by the present invention and its manufacturing method are as above, and the difference between it and the prior art is that the substrate is made through the process combination of bonding, opening, film pressing, copper etching, solder mask and forming, and the isolation layer is arranged on the substrate. , application-specific integrated circuit dies are disposed on the substrate through dispensing, and MEMS dies are disposed at the second through hole of the substrate through dispensing. The substrate, isolation layer, outer cover, and MEMS dies The enclosed space forms a closed chamber.

Through the above-mentioned technical means, the present invention can achieve the technical effect of providing the micro-electro-mechanical system grains to form a closed cavity structure.

The implementation of the present invention will be described in detail below in conjunction with the drawings and examples, so as to fully understand and implement the implementation process of how the present invention uses technical means to solve technical problems and achieve technical effects.

Firstly, the structure of the separated MEMS microphone disclosed in the first embodiment of the present invention will be described below, and please refer to "Fig. 1", which shows the structure of the separated MEMS microphone according to the present invention. A sectional view of an embodiment.

The divided micro-electro-mechanical system microphone structure disclosed in the first embodiment of the present invention includes: a substrate 10, an isolation layer 20, an Application Specific Integrated Circuit (ASIC) 30, a micro-electro-mechanical system (Micro Electro Mechanical Systems, MEMS) die 40 and an outer cover 50 , the substrate 10 further includes: a bottom plate 11 , a first side plate 12 , a second side plate 13 and a cover plate 14 .

The substrate 10 is bonded through the bottom plate 11, the first side plate 12, the second side plate 13, and the cover plate 14 (including molecular bonding, anodic bonding, metal bonding, glass paste bonding, adhesive bonding, etc.), openings ( Including ceramic micro-opening, micro-laser opening, ultrasonic opening, etc.), pressure film (including atomic layer deposition, chemical vapor deposition, etc.), copper etching (including isotropic chemical etching, non- Isotropic chemical etching, optical etching, etc.), solder resist and molding process combination to make the bottom plate 11, the first side plate 12, the second side plate 13 and the cover plate 14 embedded with power lines and grounding lines, power lines and grounding The lines exposed on the bottom surface of the bottom plate 11 are the power external contacts 111 and the ground external contacts 112. The power lines and the ground lines exposed on the top surface of the cover plate 14 are the power contacts 141 and the ground contacts 142. This does not limit the scope of application of the present invention.

Specifically, the base plate 11 can form a circuit space in the base plate 11 through stamping, photochemical reaction, and etching, and a power line and/or a grounding line are deposited in the circuit space. After the side plate 12 is joined to the second side plate 13 at the other end, a continuous circuit space is formed in the first side plate 12 and the second side plate 13 through stamping, photochemical reaction, and etching, and deposited in the continuous circuit space. The power lines and/or ground lines are electrically connected with the power lines and/or ground lines deposited in the circuit space of the bottom plate 11, and the cover plate 14 is respectively bonded to the first side plate 12 and the second side plate 13, and then A continuous circuit space is formed in the cover plate through stamping, photochemical reaction, and etching. Power lines and/or ground lines are deposited in the continuous circuit space, and are connected to the first side plate 12 and the second side plate 13. Power lines and/or ground lines are deposited in the continuous circuit space to form an electrical connection with each other, that is, power lines and ground lines are embedded in the bottom plate 11, the first side plate 12, the second side plate 13, and the cover plate 14. The formation of the substrate 10 is only an example here, and does not limit the scope of application of the present invention.

It is worth noting that the first side plate 12 and the second side plate 13 can be two separate side plates, the first side plate 12 and the second side plate 13 can also be a whole side plate, through etching, opening holes in the side plate... and so on to form through grooves, so that the cross-section presents the first side plate 12 and the second side plate 13 , which is only for illustration and does not limit the scope of application of the present invention.

An inner space 101 is formed between the bottom plate 11, the first side plate 12, the second side plate 13 and the cover plate 14, and the cover plate 14 is provided with a first through hole 143 and a second through hole between the first side plate 12 and the second side plate 13. The hole 144 (that is, through the opening method), the inner space 101 communicates with the outer space through the first through hole 143 and the second through hole 144 .

The isolation layer 20 is formed by stacking the first through hole 143 and the second through hole 144 on the substrate 10 (ie, the cover plate 14 ), defining the space on one side of the isolation layer 20 as the first isolation space 201 and defining the space on the other side of the isolation layer 20 . The side space is defined as the second isolation space 202. The isolation layer 20 can be made by deposition or dispensing the isolation layer 20 on the cover plate 14 (i.e., the substrate 10). This is only an example. , does not limit the scope of application of the present invention.

The application-specific integrated circuit die 30 is disposed on the cover plate 14 (i.e., the substrate 10 ) by dispensing glue and located in the first isolation space 201 , and the application-specific integrated circuit die 30 are respectively electrically connected to the power contacts through wire bonding technology. 141 and the ground contact 142 , the MEMS die 40 is disposed at the second through hole 144 by dispensing glue, and the MEMS die 40 is electrically connected to the power contact 141 and the ground contact 142 by wire bonding.

The outer cover 50 covers the cover plate 14 (that is, the substrate 10 ) and the isolation layer 20 , the outer cover 50 is electrically connected to the ground contact 142 , and the outer cover 50 is provided with an opening 51 relative to the MEMS die 40 , Generally speaking, the openings 51 provided on the outer cover 50 correspond to the positions of the MEMS dies 40 , but the invention is not limited thereto.

The enclosed space is surrounded by the substrate 10, the isolation layer 20, the outer cover 50 and the MEMS die 40 to form a closed chamber 61, and the open space is surrounded by the substrate 10, the isolation layer 30, the outer cover 50 and the MEMS die 40 An open chamber 62 is formed.

Next, the structure of the divided MEMS microphone disclosed in the second embodiment of the present invention will be described, and please refer to "Fig. 2", which shows the second structure of the divided MEMS microphone of the present invention. Cutaway view of implementation.

The divided MEMS microphone structure disclosed in the second embodiment of the present invention includes: a substrate 10, an isolation layer 20, an application-specific integrated circuit die 30, a MEMS die 40, and an outer cover 50. The substrate 10 is further It includes: a bottom plate 11 , a first side plate 12 , a second side plate 13 and a cover plate 14 .

The substrate 10 is bonded through the bottom plate 11, the first side plate 12, the second side plate 13, and the cover plate 14 (including molecular bonding, anodic bonding, metal bonding, glass paste bonding, adhesive bonding, etc.), openings ( Including ceramic micro-opening, micro-laser opening, ultrasonic opening, etc.), pressure film (including atomic layer deposition, chemical vapor deposition, etc.), copper etching (including isotropic chemical etching, non- Isotropic chemical etching, optical etching, etc.), solder resist and molding process combination to make the bottom plate 11, the first side plate 12, the second side plate 13 and the cover plate 14 embedded with power lines and grounding lines, power lines and grounding The lines exposed on the bottom surface of the bottom plate 11 are the power external contacts 111 and the ground external contacts 112. The power lines and the ground lines exposed on the top surface of the cover plate 14 are the power contacts 141 and the ground contacts 142. This does not limit the scope of application of the present invention.

It is worth noting that the first side plate 12 and the second side plate 13 can be two separate side plates, the first side plate 12 and the second side plate 13 can also be a whole side plate, through etching, opening holes in the side plate... and so on to form through grooves, so that the cross-section presents the first side plate 12 and the second side plate 13 , which is only for illustration and does not limit the scope of application of the present invention.

Specifically, the base plate 11 can form a circuit space in the base plate 11 through stamping, photochemical reaction, and etching, and a power line and/or a grounding line are deposited in the circuit space. After the side plate 12 is joined to the second side plate 13 at the other end, a continuous circuit space is formed in the first side plate 12 and the second side plate 13 through stamping, photochemical reaction, and etching, and deposited in the continuous circuit space. The power lines and/or ground lines are electrically connected with the power lines and/or ground lines deposited in the circuit space of the bottom plate 11, and the cover plate 14 is respectively bonded to the first side plate 12 and the second side plate 13, and then A continuous circuit space is formed in the cover plate through stamping, photochemical reaction, and etching. Power lines and/or ground lines are deposited in the continuous circuit space, and are connected to the first side plate 12 and the second side plate 13. Power lines and/or ground lines are deposited in the continuous circuit space to form an electrical connection with each other, that is, power lines and ground lines are embedded in the bottom plate 11, the first side plate 12, the second side plate 13, and the cover plate 14. The formation of the substrate 10 is only an example here, and does not limit the scope of application of the present invention.

An inner space 101 is formed between the bottom plate 11, the first side plate 12, the second side plate 13 and the cover plate 14, and the cover plate 14 is provided with a first through hole 143 and a second through hole between the first side plate 12 and the second side plate 13. The hole 144 (that is, through the opening method), the inner space 101 communicates with the outer space through the first through hole 143 and the second through hole 144 .

The application-specific integrated circuit die 30 is disposed on the cover plate 14 (ie, the substrate 10 ) by dispensing glue, and the application-specific integrated circuit die 30 is electrically connected to the power contact 141 and the ground contact 142 respectively through wire bonding technology, The MEMS chip 40 is disposed on the second through hole 144 by dispensing glue, and the MEMS chip 40 is electrically connected to the power contact 141 and the ground contact 142 by wire bonding.

The isolation layer 20 can be made by deposition and etching, or by dispensing and stacking the isolation layer 20 on the microelectromechanical system die 40. The isolation layer 20 is hollow and ring-shaped, and the outer cover 50 covers the On the cover plate 14 (that is, the substrate 10 ) and the isolation layer 20 , the outer cover 50 and the isolation layer 20 are attached to each other, and the outer cover 50 is electrically connected to the ground contact 142 . The outer cover 50 is relatively to the MEMS die 40 An opening 51 is opened at the position. Generally speaking, the opening 51 opened on the outer cover 50 corresponds to the position of the MEMS die 40 , but the present invention is not limited thereto.

The enclosed space surrounded by the substrate 10 , the isolation layer 20 , the outer cover 50 and the MEMS die 40 forms a closed cavity 61 , and the hollow ring of the isolation layer 20 and the opening 51 form an open cavity 62 .

Next, the structure of the separated MEMS microphone according to the third embodiment of the present invention will be described, and please refer to "Fig. 3", which shows the third part of the separated MEMS microphone structure of the present invention. Cutaway view of implementation.

The divided MEMS microphone structure disclosed in the third embodiment of the present invention includes: a substrate 10 , an application-specific integrated circuit die 30 , a MEMS die 40 , an isolation layer 20 and an outer cover 50 .

The conduction groove 15 can be made on the substrate 10 by using micro-laser method, ultrasonic method, etc. Substrate bonding (including molecular bonding, anodic bonding, metal bonding, glass paste bonding, adhesive bonding, etc.), opening (including ceramic micro-opening, micro-laser opening, ultrasonic opening, etc.) , pressure film (including atomic layer deposition, chemical vapor deposition, etc.), copper etching (including isotropic chemical etching, anisotropic chemical etching, optical etching, etc.), solder mask and forming process combination and The substrate 10 is embedded with power lines and ground lines, the power lines and ground lines are exposed on the bottom surface of the substrate 10 as power external contacts 102 and ground external contacts 103, and the power lines and ground lines are exposed on the top surface of the substrate 10 as power contacts 104 and For the ground contact 105, the above-mentioned manufacturing process is only for illustration, and does not limit the scope of application of the present invention.

Specifically, the sub-substrate can form a circuit space in the sub-substrate through stamping, photochemical reaction, and etching. Power lines and/or grounding lines are deposited in the circuit space, and another sub-substrate is bonded to the sub-substrate. Afterwards, a continuous circuit space is formed in the sub-substrate through stamping, photochemical reaction, and etching. Power lines and/or ground lines are deposited in the continuous circuit space, and power lines are deposited in the circuit space. And/or the grounding lines are electrically connected to each other, and so on, that is, the power line and the grounding line are embedded in the substrate 10 , which is just an example and does not limit the scope of application of the present invention.

The application-specific integrated circuit die 30 is disposed on the substrate 10 by dispensing glue, and the application-specific integrated circuit die 30 is electrically connected to the power contact 104 and the ground contact 105 respectively through wire bonding technology. The MEMS die 40 The microelectromechanical system die 40 is electrically connected to the power contact 104 and the ground contact 105 by dispensing glue on the conducting groove 15 .

The isolation layer 20 can be made by deposition and etching, or by dispensing and stacking the isolation layer 20 on the microelectromechanical system die 40. The isolation layer 20 is hollow and ring-shaped, and the outer cover 50 covers the On the substrate 10 and the isolation layer 20, the outer cover 50 and the isolation layer 20 are attached to each other, the outer cover 50 is electrically connected to the ground contact 142, and the outer cover 50 is provided with an opening 51 relative to the MEMS die 40. , generally speaking, the opening 51 opened on the outer cover 50 corresponds to the position of the MEMS die 40 , but the present invention is not limited thereto.

The enclosed space surrounded by the substrate 10 , the isolation layer 20 , the outer cover 50 and the MEMS die 40 forms a closed cavity 61 , and the hollow ring of the isolation layer 20 and the opening 51 form an open cavity 62 .

Please refer to "FIG. 4A" to "FIG. 4I". "FIG. 4A" to "FIG. 4I" are schematic plan views of the conduction slots of the divided MEMS microphone structure of the present invention.

In "Figure 4A" to "Figure 4I", various forms of the conduction groove 15 and the state of the microelectromechanical system die 40 disposed in the conduction groove 15 are respectively shown, and in "Figure 4A" to "Figure 4I The dotted line in " is the position where the microelectromechanical system die 40 is disposed on the conduction groove 15 , and as for the various forms of the conduction groove 15 , please refer to " Fig. 4A " to " Fig. 4I ".

Please refer to "FIG. 5", which shows the resonance diagram of the divided MEMS microphone structure of the present invention.

According to the Helmholtz resonance (Helmholtz resonance), the following formula is proposed:

=共振頻率，

=聲速，

=共振腔的靜態容積，

=瓶口的等效長度，

=開口的橫截面積，故而可以得知，較小的空氣體積會產生較高的共振頻率，較大的空氣體積會產生較低的共振頻率，亦即閉合腔室61體積與訊號雜訊比（Signal-to-Noise Ratio，SNR）有關。 in,

= resonant frequency,

= speed of sound,

= static volume of the cavity,

= equivalent length of the bottle mouth,

= the cross-sectional area of the opening, so it can be known that a smaller air volume will produce a higher resonance frequency, and a larger air volume will produce a lower resonance frequency, that is, the volume of the closed chamber 61 and the signal-to-noise ratio (Signal-to-Noise Ratio, SNR) related.

Therefore, the closed chamber 61 established in the present invention can increase the film movement capability in the MEMS grain 40, that is, can improve the low-frequency response. When the sound enters through the opening 51, due to the volume of the closed chamber 61 It will be larger than the volume of the resonant cavity, which can increase the resonant frequency and thus improve the sensitivity.

Next, the operation method of the first embodiment of the present invention will be described below, and please refer to "Figure 6A" and "Figure 6B". A method flow chart of a first embodiment of a method for manufacturing a microphone structure of an electromechanical system.

The manufacturing method of the separated MEMS microphone structure disclosed in the first embodiment of the present invention includes the following steps:

Firstly, the base plate is manufactured through a process combination of bonding, opening, film lamination, copper etching, solder resist and forming, and the base plate is stacked by the base plate, the first side plate, the second side plate and the cover plate (step 701); then, The first side plate is stacked on one end of the base plate, and the second side plate is stacked on the other end of the base plate (step 702); then, the cover plate is stacked on the first side plate and the second side plate, the base plate, the first side plate, the second side plate and An inner space is formed between the cover plates, and the cover plate is provided with a first through hole and a second through hole between the first side plate and the second side plate, and the inner space communicates with the outer space through the first through hole and the second through hole (step 703); then, the bottom plate is embedded with power lines and ground lines, and the power lines and ground lines are exposed on the bottom surface of the bottom plate as power external contacts and ground external contacts (step 704); then, the first side plate is embedded with power lines and grounding lines, and the second side plate is embedded with power lines and grounding lines (step 705); then, the cover plate is respectively embedded with power lines and grounding lines, and the power lines are exposed on the top surface of the cover plate as power contacts and grounding lines The ground contact is exposed on the top surface of the cover (step 706); then, an isolation layer is stacked on the substrate between the first through hole and the second through hole, and the space on one side of the isolation layer is defined as the first isolation space And define the space on the other side of the isolation layer as the second isolation space (step 707); then, the application-specific integrated circuit die is placed on the cover plate by dispensing and located in the first isolation space, and the application-specific integrated circuit The die is electrically connected to the power contact and the ground contact respectively through the wire bonding technology (step 708 ); then, the MEMS die is placed on the second through hole through dispensing, and the MEMS die is electrically connected through the wire bonding technology. Connected to the power contact and the ground contact (step 709); Next, the cover is covered on the cover plate and the isolation layer, the cover is electrically connected to the ground contact, and the cover is opened relative to the microelectromechanical system die There are openings (step 710); finally, a closed cavity is formed by the closed space surrounded by the substrate, isolation layer, outer cover, and MEMS die, and the open chamber is surrounded by the substrate, isolation layer, outer cover, and MEMS die The space forms an open chamber (step 711).

Next, the operation method of the second embodiment of the present invention will be described below, and please refer to "Fig. 7A" and "Fig. 7B". The method flow chart of the second embodiment of the manufacturing method of the electromechanical system microphone structure.

The manufacturing method of the separated MEMS microphone structure disclosed in the second embodiment of the present invention includes the following steps:

Firstly, the substrate is manufactured through a process combination of bonding, hole opening, film lamination, copper etching, solder resist and forming, and the substrate is stacked by the bottom plate, the first side plate, the second side plate and the cover plate (step 801); then, The first side plate is stacked on one end of the base plate, and the second side plate is stacked on the other end of the base plate (step 802); then, the cover plate is stacked on the first side plate and the second side plate, the base plate, the first side plate, the second side plate and An inner space is formed between the cover plates, and the cover plate is provided with a first through hole and a second through hole between the first side plate and the second side plate, and the inner space communicates with the outer space through the first through hole and the second through hole (step 803); then, the bottom plate is embedded with power lines and ground lines, and the power lines and ground lines are exposed on the bottom surface of the bottom plate as power external contacts and ground external contacts (step 804); then, the first side plate is embedded with power lines and grounding lines, and the second side plate is embedded with power lines and grounding lines (step 805); then, the cover plate is respectively embedded with power lines and grounding lines, and the power lines are exposed on the top surface of the cover plate as power contacts and grounding lines The ground contact exposed on the top surface of the cover plate (step 806 ); then, the application-specific integrated circuit dies are placed on the cover plate by dispensing glue, and the application-specific integrated circuit dies are respectively electrically connected to the power supply through wire bonding technology Contacts and grounding contacts (step 807); Next, the MEMS die is placed on the second through hole through dispensing, and the MEMS die is electrically connected to the power contact and the grounding contact through wire bonding ( Step 808); Next, the isolation layer is stacked and bonded on the microelectromechanical system die, and the isolation layer has a hollow ring shape (Step 809); then, the outer cover is covered on the cover plate and the isolation layer, and the outer cover and the isolation layer are connected to each other Fitting each other, the outer cover is electrically connected to the ground contact, and the outer cover is opened with an opening relative to the isolation layer (step 810); finally, the substrate, the isolation layer, the outer cover, and the microelectromechanical system grains are surrounded and closed The space forms a closed chamber, and the hollow ring and the opening of the isolation layer form an open chamber (step 811 ).

Next, the operation method of the third embodiment of the present invention will be described below, and please refer to "Fig. 8", which shows the third embodiment of the manufacturing method of the MEMS microphone structure of the present invention Sample method flow chart.

The manufacturing method of the separated MEMS microphone structure disclosed in the third embodiment of the present invention includes the following steps:

Firstly, through the process combination of bonding, drilling, laminating, copper etching, solder resist and forming, a substrate with conduction grooves is formed. The substrate is embedded with power lines and ground lines, and the power lines and ground lines are exposed on the substrate. The bottom surface is the external power contact point and the ground external contact point, and the power line and the ground line are exposed on the top surface of the substrate as the power contact point and the ground contact point (step 901); then, the application-specific integrated circuit die is placed on the substrate by dispensing , the application-specific integrated circuit die is electrically connected to the power contact and the ground contact respectively through wire bonding technology (step 902 ); then, the MEMS die is placed on the conduction groove through dispensing, and the MEMS die Electrically connect to the power contact and the ground contact through wire bonding (step 903); then, the isolation layer is stacked and attached to the microelectromechanical system die, and the isolation layer presents a hollow ring shape (step 904); then, the outer cover Covering the substrate and the isolation layer, the outer cover and the isolation layer are attached to each other, the outer cover is electrically connected to the ground contact, and the outer cover is provided with an opening relative to the isolation layer (step 905); finally, the substrate, The closed space is surrounded by the isolation layer, the outer cover and the microelectromechanical system grains to form a closed cavity, and the hollow ring and the opening of the isolation layer form an open cavity (step 906 ).

To sum up, it can be known that the difference between the present invention and the prior art lies in the fact that the substrate is made through the process combination of bonding, hole opening, film pressing, copper etching, solder resist and molding, and the isolation layer is arranged on the substrate. The bulk circuit die is placed on the substrate by dispensing, the MEMS die is disposed on the second through hole of the substrate by dispensing, and the closed space is surrounded by the substrate, isolation layer, outer cover and MEMS die A closed chamber is formed.

This technical means can solve the problem that the flip-chip technology in the prior art cannot form the microelectromechanical system grains into a closed cavity structure, and then achieve the technical effect of providing the microelectromechanical system grains to form a closed cavity structure.

Although the embodiments disclosed in the present invention are as above, the content described above is not intended to directly limit the patent protection scope of the present invention. Anyone with ordinary knowledge in the technical field to which the present invention belongs can make some changes in the forms and details of the implementation without departing from the disclosed spirit and scope of the present invention. The scope of patent protection of the present invention must still be defined by the appended patent application scope.

10: Substrate 101: Interior space 102: Power external contact point 103: Grounding external contact 104: Power contact 105: Grounding contact 11: Bottom plate 111: Power external contact point 112: Grounding external contact 12: The first side panel 13: Second side panel 14: cover plate 141: Power contact 142: Grounding contact 143: The first through hole 144: Second through hole 15: Conduction slot 20: isolation layer 201: The first isolated space 202:Second isolation space 30: Application-specific integrated circuit die 40: MEMS Die 50: outer cover 51: opening 61: Closed chamber 62: Open chamber Step 701: The substrate is formed by combining the processes of bonding, opening, laminating, copper etching, solder masking and forming. The substrate is stacked by the bottom plate, the first side plate, the second side plate and the cover plate Step 702: The first side panel is stacked on one end of the base plate, and the second side panel is stacked on the other end of the base plate Step 703: The cover plates are stacked on the first side plate and the second side plate, an inner space is formed between the bottom plate, the first side plate, the second side plate and the cover plate, and the cover plate is provided with a second side plate between the first side plate and the second side plate. A through hole and a second through hole, the internal space communicates with the external space through the first through hole and the second through hole Step 704: The power supply line and the grounding line are embedded in the bottom plate, and the power line and the grounding line are exposed on the bottom surface of the bottom plate as the power supply external contact point and the grounding external contact point Step 705: Power lines and ground lines are embedded in the first side plate, and power lines and ground lines are embedded in the second side plate Step 706: The cover plate is respectively embedded with a power line and a ground line, the power line exposed on the top surface of the cover plate is the power contact and the ground line exposed on the top surface of the cover plate is the ground contact Step 707: Stack and form an isolation layer on the substrate between the first through hole and the second through hole, define the space on one side of the isolation layer as the first isolation space and define the space on the other side of the isolation layer as the second isolation space Step 708: The application-specific integrated circuit die is disposed on the cover plate by dispensing glue and located in the first isolation space, and the application-specific integrated circuit die is electrically connected to the power contact and the ground contact respectively through wire bonding technology Step 709: The MEMS die is placed on the second through hole by dispensing, and the MEMS die is electrically connected to the power contact and the ground contact through wire bonding Step 710: The outer cover is covered on the cover plate and the isolation layer, the outer cover is electrically connected to the ground contact, and the outer cover is provided with an opening relative to the MEMS grain Step 711: The closed space is surrounded by the substrate, the isolation layer, the outer cover and the microelectromechanical system grains to form a closed chamber, and the open space is surrounded by the substrate, isolation layer, outer cover and microelectromechanical system grains to form an open chamber Step 801: The substrate is formed by combining the processes of bonding, hole opening, film lamination, copper etching, solder masking and forming. The substrate is formed by stacking the bottom plate, the first side plate, the second side plate and the cover plate Step 802: The first side panel is stacked on one end of the base plate, and the second side panel is stacked on the other end of the base plate Step 803: The cover boards are stacked on the first side board and the second side board, an inner space is formed between the bottom board, the first side board, the second side board and the cover board, and a second side board is provided between the first side board and the second side board. A through hole and a second through hole, the internal space communicates with the external space through the first through hole and the second through hole Step 804: The base plate is embedded with power lines and ground lines, and the power lines and ground lines are exposed on the bottom of the base plate as power external contacts and ground external contacts Step 805: Power lines and ground lines are embedded in the first side plate, and power lines and ground lines are embedded in the second side plate Step 806: The cover plate is respectively embedded with a power line and a ground line, and the power line exposed on the top surface of the cover plate is a power contact and the ground line exposed on the top surface of the cover plate is a ground contact Step 807: Application-specific integrated circuit dies are placed on the cover plate by dispensing glue, and application-specific integrated circuit dies are electrically connected to power contacts and ground contacts respectively through wire bonding technology Step 808: The MEMS die is placed on the second through hole by dispensing, and the MEMS die is electrically connected to the power contact and the ground contact through wire bonding Step 809: The isolation layer is stacked and attached to the microelectromechanical system grain, and the isolation layer presents a hollow ring shape Step 810: The outer cover is covered on the cover plate and the isolation layer, the outer cover and the isolation layer are attached to each other, the outer cover is electrically connected to the ground contact, and the outer cover is provided with an opening relative to the isolation layer Step 811: The closed space is surrounded by the substrate, the isolation layer, the outer cover, and the microelectromechanical system grains to form a closed chamber, and the hollow ring of the isolation layer and the opening form an open chamber Step 901: Through the process combination of bonding, opening, laminating, copper etching, solder resist and forming, a substrate with conduction grooves is formed. The substrate is embedded with power lines and ground lines, and the power lines and ground lines are exposed on the The bottom surface of the substrate is the external contact point of the power supply and the external contact point of the ground, and the power supply line and the ground line exposed on the top surface of the substrate are the power contact point and the ground contact point Step 902: Application-specific IC dies are placed on the substrate by dispensing, and application-specific IC dies are electrically connected to power contacts and ground contacts respectively through wire bonding Step 903: The MEMS die is placed on the conduction groove by dispensing, and the MEMS die is electrically connected to the power contact and the ground contact through wire bonding Step 904: The isolation layer is stacked and attached to the microelectromechanical system grain, and the isolation layer presents a hollow ring shape Step 905: The outer cover is covered on the substrate and the isolation layer, the outer cover and the isolation layer are attached to each other, the outer cover is electrically connected to the ground contact, and the outer cover is provided with an opening relative to the isolation layer Step 906: The enclosed space is surrounded by the substrate, the isolation layer, the outer cover, and the microelectromechanical system grains to form a closed chamber, and the hollow ring of the isolation layer and the opening form an open chamber

FIG. 1 is a cross-sectional view of the first embodiment of the divided MEMS microphone structure of the present invention. FIG. 2 is a cross-sectional view of a second embodiment of the divided MEMS microphone structure of the present invention. FIG. 3 is a cross-sectional view of a third embodiment of the divided MEMS microphone structure of the present invention. FIG. 4A to FIG. 4I are schematic plan views of the conduction slots of the divided MEMS microphone structure of the present invention. Fig. 5" shows the resonance diagram of the divided MEMS microphone structure of the present invention. FIG. 6A and FIG. 6B are flow charts of the method of the first embodiment of the manufacturing method of the MEMS microphone structure of the present invention. FIG. 7A and FIG. 7B are flow charts of the method of the second embodiment of the manufacturing method of the MEMS microphone structure of the present invention. No. 8 is a method flow chart of the third embodiment of the manufacturing method of the MEMS microphone structure of the present invention.

10: Substrate

11: Bottom plate

111: Power external contact point

112: Grounding external contact

12: The first side panel

13: Second side panel

14: cover plate

141: Power contact

142: Grounding contact

143: The first through hole

144: Second through hole

20: isolation layer

201: The first isolated space

202:Second isolation space

30: Application-specific integrated circuit die

40: MEMS Die

50: outer cover

51: opening

61: Closed chamber

62: Open chamber

Claims (9)

An isolated MEMS microphone structure, comprising: A substrate, the substrate further comprising: A base plate, the base plate is embedded with a power line and a grounding line, and the power line and the grounding line are exposed on the bottom surface of the base plate as power external contacts and grounding external contacts; A first side plate, the first side plate is stacked on one end of the bottom plate, and a power line and a grounding line are embedded in the first side plate; a second side plate, the second side plate is stacked on the other end of the bottom plate, the second side plate is embedded with a power line and a grounding line; and a cover plate, the cover plate is stacked on the first side plate and the second side plate, an inner space is formed between the bottom plate, the first side plate, the second side plate and the cover plate, The cover plate defines a first through hole and a second through hole between the first side plate and the second side plate, and the inner space is defined by the first through hole and the second through hole. The hole communicates with the external space, and the cover plate is respectively embedded with a power line and a ground line, and the power line and the ground line are exposed on the top surface of the cover plate as power contacts and ground contacts; An isolation layer is stacked and formed on the substrate between the first through hole and the second through hole, the space on one side of the isolation layer is defined as a first isolation space and the isolation layer The space on the other side is defined as a second isolated space; An application specific integrated circuit (Application Specific Integrated Circuit, ASIC) die, the application specific integrated circuit die is disposed on the cover plate by dispensing and located in the first isolation space, the specific application The integrated circuit die is electrically connected to the power contact and the ground contact respectively through wire bonding technology; A MEMS (Micro Electro Mechanical Systems, MEMS) grain, the MEMS grain is disposed at the second through hole through dispensing, and the MEMS grain is electrically connected to the second through hole through wire bonding technology power contacts and earthing contacts; and An outer cover, the outer cover is covered on the cover plate and the isolation layer, the outer cover is electrically connected to the ground contact, and the outer cover is opened relative to the microelectromechanical system grain. Opening, forming a closed chamber by the substrate, the isolation layer, the outer cover and the microelectromechanical system grain surrounded by the enclosed space, the substrate, the isolation layer, the outer cover and The MEMS die surrounds an open space to form an open chamber. The isolated microelectromechanical system microphone structure according to claim 1, wherein the bottom plate, the first side plate, the second side plate and the cover plate are made of holes, pressure film, copper etching, solder mask and forming The process combination is stacked to form the substrate, and power lines and grounding lines are embedded in the bottom plate, the first side plate, the second side plate and the cover plate. An isolated MEMS microphone structure, comprising: A substrate, the substrate further comprising: A base plate, the base plate is embedded with a power line and a grounding line, and the power line and the grounding line are exposed on the bottom surface of the base plate as power external contacts and grounding external contacts; A first side plate, the first side plate is stacked on one end of the bottom plate, and a power line and a grounding line are embedded in the first side plate; a second side plate, the second side plate is stacked on the other end of the bottom plate, the second side plate is embedded with a power line and a grounding line; and a cover plate, the cover plate is stacked on the first side plate and the second side plate, an inner space is formed between the bottom plate, the first side plate, the second side plate and the cover plate, The cover plate defines a first through hole and a second through hole between the first side plate and the second side plate, and the inner space is defined by the first through hole and the second through hole. The hole communicates with the external space, and the cover plate is respectively embedded with a power line and a ground line, and the power line and the ground line are exposed on the top surface of the cover plate as power contacts and ground contacts; An application-specific integrated circuit die, the application-specific integrated circuit die is disposed on the cover plate through glue dispensing, and the application-specific integrated circuit die is electrically connected to the power contacts respectively through wire bonding technology and ground contacts; A MEMS die, the MEMS die is disposed at the second through hole through dispensing, and the MEMS die is electrically connected to the power contact and the ground contact through wire bonding; an isolation layer, the isolation layer is stacked and bonded on the microelectromechanical system die, the isolation layer presents a hollow ring shape; and An outer cover, the outer cover is covered on the cover plate and the isolation layer, the outer cover and the isolation layer are attached to each other, the outer cover is electrically connected to the ground contact, the The outer cover is provided with an opening relative to the isolation layer, and a closed space is formed by the substrate, the isolation layer, the outer cover, and the microelectromechanical system grains, and the isolation layer The hollow ring forms an open chamber with the opening. The isolated microelectromechanical system microphone structure according to claim 3, wherein the bottom plate, the first side plate, the second side plate and the cover plate are made of holes, pressed films, copper etching, solder masking and molding The process combination is stacked to form the substrate, and power lines and grounding lines are embedded in the bottom plate, the first side plate, the second side plate and the cover plate. An isolated MEMS microphone structure, comprising: A substrate, the substrate is provided with a conduction groove, the substrate is embedded with a power line and a grounding line, and the power line and the grounding line are exposed on the bottom surface of the substrate as the power external contact point and the grounding external contact point, and the power line and the grounding line are exposed On the top surface of the substrate are power contacts and ground contacts; An application-specific integrated circuit die, the application-specific integrated circuit die is disposed on the substrate by dispensing glue, and the application-specific integrated circuit die is electrically connected to the power contacts and the ground contact; A micro-electro-mechanical system die, the micro-electro-mechanical system die is disposed at the conduction slot through glue dispensing, and the micro-electro-mechanical system die is electrically connected to the power contact and the ground contact through wire-bonding technology; an isolation layer, the isolation layer is stacked and bonded on the microelectromechanical system die, the isolation layer presents a hollow ring shape; and An outer cover, the outer cover covers the substrate and the isolation layer, the outer cover and the isolation layer are attached to each other, the outer cover is electrically connected to the ground contact, the outer cover The cover is provided with an opening relative to the isolation layer, and a closed cavity is formed by the enclosed space surrounded by the substrate, the isolation layer, the outer cover, and the microelectromechanical system grains, and the isolation layer is hollow. The ring and the aperture form an open chamber. The isolated micro-electro-mechanical system microphone structure according to claim 1, wherein the substrate is made by a combination of opening, film pressing, copper etching, solder masking and molding, and power lines and power lines are embedded in the substrate. ground line. A method for manufacturing an isolated MEMS microphone structure, comprising the following steps: A base plate is manufactured through a process combination of bonding, opening, film pressing, copper etching, solder resist and forming, and the base plate is formed by stacking a bottom plate, a first side plate, a second side plate and a cover plate; The first side plate is stacked on one end of the bottom plate, and the second side plate is stacked on the other end of the bottom plate; The cover plate is stacked on the first side plate and the second side plate, an inner space is formed between the bottom plate, the first side plate, the second side plate and the cover plate, and the cover plate A first through hole and a second through hole are provided between the first side plate and the second side plate, and the inner space is connected to the outer space through the first through hole and the second through hole. Intercommunication; The base plate is embedded with a power line and a ground line, and the power line and the ground line are exposed on the bottom surface of the base plate as power external contacts and ground external contacts; A power line and a grounding line are embedded in the first side plate, and a power line and a grounding line are embedded in the second side plate; The cover plate is respectively embedded with a power line and a ground line, the power line exposed on the top surface of the cover plate is a power contact and the ground line exposed on the top surface of the cover plate is a ground contact; An isolation layer is stacked on the substrate between the first through hole and the second through hole, the space on one side of the isolation layer is defined as a first isolation space and the other side of the isolation layer is defined as a first isolation space. The space on one side is defined as a second isolated space; An application-specific integrated circuit die is disposed on the cover plate by dispensing glue and located in the first isolation space, and the application-specific integrated circuit die is respectively electrically connected to the power contact and the ground through wire bonding technology contact; A micro-electro-mechanical system die is disposed at the second through hole by dispensing glue, and the micro-electro-mechanical system die is electrically connected to the power contact and the ground contact through wire bonding technology; An outer cover covers the cover plate and the isolation layer, the outer cover is electrically connected to the ground contact, and the outer cover is provided with an opening relative to the MEMS grain; and A closed chamber is formed by the enclosed space surrounded by the substrate, the isolation layer, the outer cover, and the microelectromechanical system grains, and the substrate, the isolation layer, the outer cover, and the microelectromechanical system The electromechanical system die surrounds the open space forming an open chamber. A method for manufacturing an isolated MEMS microphone structure, comprising the following steps: A base plate is manufactured through a process combination of bonding, opening, film pressing, copper etching, solder resist and forming, and the base plate is formed by stacking a bottom plate, a first side plate, a second side plate and a cover plate; The first side plate is stacked on one end of the bottom plate, and the second side plate is stacked on the other end of the bottom plate; The cover plate is stacked on the first side plate and the second side plate, an inner space is formed between the bottom plate, the first side plate, the second side plate and the cover plate, and the cover plate A first through hole and a second through hole are provided between the first side plate and the second side plate, and the inner space is connected to the outer space through the first through hole and the second through hole. Intercommunication; The base plate is embedded with a power line and a ground line, and the power line and the ground line are exposed on the bottom surface of the base plate as power external contacts and ground external contacts; A power line and a grounding line are embedded in the first side plate, and a power line and a grounding line are embedded in the second side plate; The cover plate is respectively embedded with a power line and a ground line, the power line exposed on the top surface of the cover plate is a power contact and the ground line exposed on the top surface of the cover plate is a ground contact; An application-specific integrated circuit chip is disposed on the cover plate by dispensing glue, and the application-specific integrated circuit chip is electrically connected to the power contact and the ground contact respectively through wire bonding technology; A micro-electro-mechanical system die is disposed at the second through hole by dispensing glue, and the micro-electro-mechanical system die is electrically connected to the power contact and the ground contact through wire bonding technology; An isolation layer is stacked and bonded on the microelectromechanical system grain, and the isolation layer presents a hollow ring shape; The outer cover is covered on the cover plate and the isolation layer, the outer cover and the isolation layer are attached to each other, the outer cover is electrically connected to the ground contact, and the outer cover is relatively openings are provided in the separation layer; and A closed cavity is formed by the enclosed space surrounded by the substrate, the isolation layer, the outer cover, and the MEMS grain, and the hollow ring of the isolation layer forms an open cavity with the opening. A method for manufacturing an isolated MEMS microphone structure, comprising the following steps: Through the process combination of bonding, opening, laminating, copper etching, solder resist and forming, a substrate with a conduction groove is formed. The substrate is embedded with power lines and ground lines, and the power lines and ground lines are exposed on the The bottom surface of the substrate is an external power contact point and an external ground contact point, and the power supply line and ground line exposed on the top surface of the substrate are power contact points and ground contact points; An application-specific integrated circuit chip is disposed on the substrate by dispensing glue, and the application-specific integrated circuit chip is electrically connected to the power contact and the ground contact respectively through wire bonding technology; A micro-electro-mechanical system die is disposed on the conduction groove by dispensing glue, and the micro-electro-mechanical system die is electrically connected to the power contact and the ground contact through wire bonding technology; An isolation layer is stacked and bonded on the microelectromechanical system grain, and the isolation layer presents a hollow ring shape; An outer cover covers the substrate and the isolation layer, the outer cover and the isolation layer are attached to each other, the outer cover is electrically connected to the ground contact, and the outer cover is relatively openings are provided in the separation layer; and A closed cavity is formed by the enclosed space surrounded by the substrate, the isolation layer, the outer cover, and the MEMS grain, and the hollow ring of the isolation layer forms an open cavity with the opening.

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