TW202318623A - Led chip formation substrate and transfer method of led chip - Google Patents

Abstract

To provide an LED chip forming substrate including an LED chip for repair. An LED chip forming substrate includes a first region including a plurality of first LED chips arranged with a first pitch in a first direction, and a second region located on the periphery of the first region and including a plurality of second LED chips arranged with a second pitch greater than the first pitch in the first direction, and the first LED chip and the second LED chip have the same emission color. Also, the number of the plurality of second LED chips is 0.1% or more and 10% or less of the number of the plurality of first LED chips.

Description

LED Chip Formation Substrate and LED Chip Transfer Method

One embodiment of the present invention relates to an LED chip forming substrate on which an LED chip is formed. Moreover, one embodiment of the present invention relates to a method of transferring an LED chip to a backplane using an LED chip forming substrate.

Among small and medium-sized display devices such as smartphones, display devices using liquid crystals or OLEDs (Organic Light Emitting Diodes) have been commercialized. In particular, compared with liquid crystal display devices, OLED display devices using self-luminous elements, ie, OLEDs, have the advantages of high contrast and no need for a backlight source. However, since OLEDs are composed of organic compounds, it is difficult to ensure high reliability of OLED display devices due to deterioration of organic compounds.

In recent years, development of a so-called micro LED display device (or small LED display device) in which a tiny LED chip is mounted on a pixel circuit of a circuit board has been promoted as a next-generation display device (for example, Patent Document 1). LED is the same self-luminous device as OLED, but different from OLED, it is composed of inorganic compounds containing gallium (Ga) or indium (In). Therefore, compared with OLED display devices, micro LED display devices are easy to ensure high reliability. Furthermore, the luminous efficiency and brightness of LED chips are higher than that of OLED display devices. Therefore, the micro-LED display device is expected as a next-generation display device with high reliability, high brightness, and high contrast.

Different from the OLED display device, the micro LED display device has a step of transferring the LED chip to the backplane in its manufacturing method. For example, Patent Document 1 discloses a method of transferring a micro LED chip to a backplane by irradiation of laser light. [Prior Art Literature] [Patent Document]

[Patent Document 1] Japanese National Publication No. 2019-511838

[Problem to be Solved by the Invention]

When a defect occurs in the transfer of the micro LED chip, it is necessary to repair the defective part. However, micro-LED chips are tiny, and it is very difficult to handle a single micro-LED chip. Therefore, a decrease in yield or an increase in manufacturing cost due to repair of defective parts becomes a problem.

An embodiment of the present invention is to provide an LED chip forming substrate including an LED chip for repair in view of the above problems. Another object of one embodiment of the present invention is to provide a method of transferring an LED chip that can be repaired using an LED chip forming substrate. [Technical means to solve the problem]

An LED chip formation substrate according to an embodiment of the present invention includes: a first region including a plurality of first LED chips arranged at a first pitch along a first direction; and a second region located at a peripheral portion of the first region , including the second LED chip arranged with a second pitch larger than the first pitch along the first direction; and the first LED chip and the aforementioned second LED chip have the same luminous color.

An LED chip transfer method according to an embodiment of the present invention is to separate the LED chip forming substrate including the first region and the second region into a first substrate including the first region and one including a plurality of second LED chips. The second substrate, the first area includes a plurality of first LED chips arranged with a first pitch along the first direction, the second area is located at the peripheral portion of the first area, and includes a plurality of first pitches along the first direction For a plurality of second LED chips arranged with a large second pitch, use the first substrate to transfer one or more of the plurality of first LED chips to the backplane, and use the second substrate to transfer one of the plurality of second LED chips transferred to the backplane.

Hereinafter, each embodiment of the present invention will be described with reference to the drawings. Furthermore, revealing the ultimate is only an example. The configurations that can be easily conceived by those skilled in the art by appropriately changing the configurations of the embodiments while maintaining the gist of the invention are naturally included in the scope of the present invention. In addition, in order to clarify the description, the drawings may show schematically the width, thickness, shape, etc. of each part in comparison with the actual aspect. However, the illustrated shape is ultimately an example and does not limit the explanation of the present invention. In addition, in this specification and each drawing, letters are assigned after the same symbols to members that are the same as those described in the drawings that have already appeared, and detailed descriptions are appropriately omitted.

In this specification, for the convenience of description, the words "upper" or "above" or "under" or "below" are used. In principle, the direction from the substrate toward the structure is based on the substrate on which the structure is formed. Either "up" or "above". Conversely, set the direction from the structure toward the substrate as "down" or "below". Therefore, in the representation of structures on the substrate, the surface of the structure in the direction facing the substrate becomes the lower surface of the structure, and the surface on the opposite side becomes the upper surface of the structure. In addition, in the expression of the structure on the substrate, only the upper-lower relationship between the substrate and the structure is described, and other members may be arranged between the substrate and the structure. Furthermore, the words "on" or "above" or "under" or "below" refer to the order of lamination in a structure in which a plurality of layers are laminated, and there may be no overlapping positional relationship in plan view.

In this specification, "α includes A, B, or C", "α includes any one of A, B, and C", "α includes one selected from the group consisting of A, B, and C", etc. It means that α includes a plurality of combinations of A to C unless otherwise specified. Furthermore, these representations do not exclude the case that α includes other components.

The following embodiments can be combined with each other as long as there is no technical conflict.

＜First Embodiment＞ [1. Composition of LED Chip Formation Substrate 10] Referring to FIG. 1A and FIG. 1B , the structure of an LED chip forming substrate 10 according to an embodiment of the present invention will be described.

1A and 1B are schematic plan views and cross-sectional views of an LED chip formation substrate 10 according to an embodiment of the present invention. Specifically, FIG. 1B is an enlarged cross-sectional view cut along line A1-A2 shown in FIG. 1A.

As shown in FIG. 1A , the LED chip formation substrate 10 has a first region 110 and a second region 120 formed on a support substrate 100 . The first region 110 is formed at the center of the support substrate 100 . The second region 120 is formed on the peripheral portion of the support substrate 100 . In other words, the second region 120 is formed on the periphery of the first region 110 .

A plurality of second regions 120 may be formed. In this case, the plurality of second regions 120 may be separately formed on the periphery of the first region 110 .

In plan view, each of the first region 110 and the second region 120 is formed in a rectangular shape. However, each of the first region 110 and the second region 120 is not limited to a rectangle, and may be formed in any shape.

As shown in FIG. 1B , in the first region 110 , a plurality of first LED chips 200 - 1 are formed on the support substrate 100 . Moreover, in the second region 120 , a plurality of second LED chips 200 - 2 are formed on the support substrate 100 . The first LED chip 200-1 and the second LED chip 200-2 have the same light emitting color (for example, blue, green, or red). That is, the first LED chip 200-1 and the second LED chip 200-2 have the same structure. Therefore, in the following, when the first LED chip 200-1 and the second LED chip 200-2 are not particularly distinguished, they may be described as the LED chip 200. In addition, in order to explain the difference in the light emission color of the LED chip 200, the blue LED chip 200B, the green LED chip 200G, and the red LED chip 200R are described.

Each layer constituting the LED chip 200 (for example, a cathode electrode, an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer, or an anode electrode, etc.) is formed on the support substrate 100 . Therefore, the supporting substrate 100 is preferably a substrate capable of growing crystals of various layers. The supporting substrate 100 is, for example, a sapphire substrate. However, the configuration of the supporting substrate 100 is not limited thereto. The support substrate 100 may also be a substrate on which the LED chip 200 formed using another substrate is transferred. In this case, as the supporting substrate 100, a substrate having light transmission properties such as a glass substrate, a quartz substrate, or a resin substrate can be used. As the resin substrate, flexible substrates such as polyimide substrates, acrylic substrates, silicone-based substrates, or fluororesin substrates can be used. Furthermore, when laser light is used to transfer the LED chip 200 to the backplane, the supporting substrate 100 is preferably a translucent substrate through which laser light can pass. Furthermore, "backplane" refers to a substrate on which circuits controlling the LED chip 200 are formed. In the backplane, conductive bonding members can be arranged on the electrodes electrically connected with the circuit.

Between the supporting substrate 100 and the LED chip 200 , a peeling layer 210 is provided. When transferring the LED chip 200 to the backplane, the LED chip 200 is separated from the supporting substrate 100 on the peeling layer 210 . The peeling layer 210 is, for example, a gallium nitride film. GaN thin films can absorb laser light with a wavelength of 248 nm. Therefore, when the peeling layer 210 is a gallium nitride thin film, if the laser light with a wavelength of 248 nm is irradiated, the gallium nitride is decomposed into metal gallium and nitrogen gas, and the LED chip 200 can be separated from the support substrate 100 . In other words, the LED wafer 200 can be peeled off.

The peeling layer 210 shown in FIG. 1B is arranged in an island shape for each LED chip 200 , but the composition of the peeling layer 210 is not limited thereto. The release layer 210 may be provided on the entire surface of the first region 110 and the second region 120 . Furthermore, the peeling layer 210 is provided as needed, and the LED chip formation substrate 10 may also be configured without the peeling layer 210 .

On the LED chip 200, a connection member 220 is disposed. The connecting member 220 is electrically connected to the electrodes of the backplane when the LED chip 200 is transferred to the backplane. Therefore, the connection member 220 has conductivity, such as silver paste, solder (Sn), paste containing metal nanoparticles, or anisotropic conductive film (ACF). Furthermore, the connection member 220 is provided as needed, and the LED chip forming substrate 10 may also be configured without the connection member 220 .

As described above, the first LED chip 200-1 and the second LED chip 200-2 have the same structure. However, the plurality of first LED chips 200 - 1 formed in the first region 110 and the plurality of second LED chips 200 - 2 formed in the second region 120 have different pitches. In the first direction (x-axis direction), the plurality of first LED chips 200-1 and the plurality of second LED chips 200-2 respectively have a first pitch p1 and a second pitch p2. The second pitch p2 is larger than the first pitch p1. Furthermore, although not shown, the plurality of first LED chips 200-1 and the plurality of second LED chips 200-2 each have a third pitch in the second direction (y-axis direction) perpendicular to the first direction. p3 and the 4th pitch p4. The fourth pitch p4 is larger than the third pitch p3.

Details will be described later, but basically, the first LED chip 200-1 is transferred to the backplane. On the other hand, the second LED chip 200-2 is used for repairing defective parts. In other words, the LED chip forming substrate 10 includes the second region 120 where only the second LED chip 200-2 specialized for repair is collected. Therefore, the number of first LED chips 200 - 1 formed in the first region 110 is far greater than the number of second LED chips 200 - 2 formed in the second region 120 . For example, the number of the second LED chips 200 - 2 formed in the second region 120 is not less than 0.1% and not more than 10% of the number of the first LED chips 200 - 1 formed in the first region 110 . Also, the second pitch p2 is, for example, not less than 1 mm and not more than 5 mm.

The detailed structure of the LED chip 200 is omitted, and the LED chip 200 may have a vertical electrode structure in which electrodes are arranged in a vertical direction, or a horizontal electrode structure in which electrodes are arranged in a horizontal direction. The length of one side of the LED chip 200 is, for example, not less than 1 μm and not more than 100 μm.

[2. Transfer method of LED chip 200] Referring to FIG. 2 to FIG. 4C , the method of transferring the LED chip 200 to the backplane will be described.

[2-1. Cutting Step of LED Chip Formation Substrate 10 ] FIG. 2 is a schematic diagram illustrating cutting of the LED chip forming substrate 10 in the method of transferring the LED chip 200 according to one embodiment of the present invention.

As shown in FIG. 2 , the LED chip formation substrate 10 is cut so as to be separated into a first transfer substrate 11 and a plurality of second transfer substrates 12 . The first transfer substrate 11 includes a first region 110 . That is, the first transfer substrate 11 is cut so as to include the plurality of first LED chips 200 - 1 formed in the first region 110 . The second transfer substrate 12 is cut so as to include one second LED chip 200 - 2 formed in the second region 120 . That is, the second transfer substrate 12 is cut into plural pieces.

The size of the first transfer substrate 11 is substantially the same as the size of the first region 110 . However, when the size of the backplane is smaller than the size of the LED chip formation substrate 10, the first transfer substrate 11 can be cut into plural pieces according to the size of the backplane.

Since the second transfer substrate 12 is uniformly cut to include one second LED chip 200-2, its size depends on the second pitch p2 and the fourth pitch p4. The length of one side of the second transfer substrate 12 is, for example, not less than 1 mm and not more than 5 mm. If the size of the second transfer substrate 12 is too small, it is difficult to handle the second transfer substrate 12 (for example, hold, hold, or suck the second transfer substrate 12 ) when repairing the defective part. Also, if the size of the second transfer substrate 12 is too large, the number of first LED chips 200-1 on the first transfer substrate 11 will decrease, and thus the manufacturing cost will increase. Therefore, the size of the second transfer substrate 12 is preferably within the above-mentioned range.

Basically, the transfer of the LED chip 200 to the backplane is performed using the first transfer substrate 11 . The second transfer substrate 12 is used for repairing defective parts.

[2-2. Step of transferring LED chip 200 using first transfer substrate 11 ] 3A to 3F are schematic diagrams illustrating the steps of transferring the first LED chip 200-1 using the first transfer substrate 11 in the method of transferring the LED chip 200 according to one embodiment of the present invention.

In FIG. 3A, the first blue transfer substrate 11B formed with the first blue LED chip 200B-1 is pressed against the first backplane 30-1, so that the connection on the first blue LED chip 200B-1 The member 220 is in close contact with the bonding member 310 of the first backplane 30-1. In addition, as the bonding member 310, the same material as that of the connection member 220 can be used. Next, the peeling layer 210 is selectively irradiated with laser light to peel the first blue LED chip 200B- 1 . The connecting member 220 and the bonding member 310 are bonded by the peeling energy of the first blue LED chip 200B- 1 , and furthermore, the connecting member 220 and the bonding member 310 can be selectively heated to make bonding firm. Furthermore, the selective heating of the connection member 220 and the bonding member 310 can be performed, for example, by irradiating and peeling laser light of different wavelengths.

Similarly, the first green transfer substrate 11G on which the first green LED chip 200G-1 is formed is pressed against the second backplane 30-2, and the first green LED chip 200G-1 is selectively peeled off. Also, similarly, the first red transfer substrate 11R on which the first red LED chip 200R-1 is formed is pressed against the third backplane 30-3, and the first red LED chip 200R-1 is selectively peeled off.

In FIG. 3B, the first blue transfer substrate 11B is separated from the first back plate 30-1. The selectively peeled first blue LED chip 200B-1 is transferred from the first blue transfer substrate 11B to the first backplane 30-1.

Similarly, the first green transfer substrate 11G is separated from the second backplane 30-2, and the selectively peeled first green LED chip 200G-1 is transferred to the second backplane 30-2. Also, similarly, the first red transfer substrate 11R is separated from the third backplane 30-3, and the selectively peeled first red LED chip 200R-1 is transferred to the third backplane.

In FIG. 3C , the first red transfer substrate 11R to which a part of the first red LED chip 200R-1 is transferred (that is, the first red transfer substrate 11R having a portion lacking the first red LED chip 200R-1 ) is pressed against the first backplane 30-1, so that the connecting member 220 on the first red LED chip 200R-1 is in close contact with the bonding member 310 of the first backplane 30-1. The first blue LED chip 200B-1 is transferred to the first backplane 30-1, and the first blue LED chip 200B-1 on the first backplane 30-1 can be embedded in a place lacking the first red LED chip 200R-1. part. Therefore, the first blue LED chip 200B-1 transferred to the first backplane 30-1 will not cause interference, and the first red transfer substrate 11R can be pressed against the first backplane 30-1. Next, the peeling layer 210 is selectively irradiated with laser light to peel the first red LED chip 200R- 1 .

Similarly, the first blue transfer substrate 11B on which a part of the first blue LED chip 200B-1 is transferred (that is, the first blue transfer substrate 11B having a part lacking the first blue LED chip 200B-1 is The carrier substrate 11B) is pressed against the second backplane 30-2 to selectively peel off the first blue LED chip 200B-1. Also, similarly, the first green transfer substrate 11G to which a part of the first green LED chip 200G-1 is transferred (that is, the first green transfer substrate 11G having a portion lacking the first green LED chip 200G-1 ) is pressed against the third backplane 30-3 to selectively peel off the first green LED chip 200G-1.

In FIG. 3D, the first red transfer substrate 11R is separated from the first back plate 30-1. The selectively peeled first red LED chip 200R-1 is transferred from the first red transfer substrate 11R to the first backplane 30-1.

Similarly, the first blue transfer substrate 11B is separated from the second backplane 30-2, and the selectively peeled first blue LED chip 200B-1 is transferred to the second backplane 30-2. Also, similarly, the first green transfer substrate 11G is separated from the third backplane 30-3, and the selectively peeled first green LED chip 200G-1 is transferred to the third backplane.

In FIG. 3E , the first green transfer substrate 11G to which a part of the first green LED chip 200G-1 is transferred (that is, the first green transfer substrate 11G having a portion lacking the first green LED chip 200G-1 ) is pressed against the first backplane 30-1, so that the connecting member 220 on the first green LED chip 200G-1 is in close contact with the bonding member 310 of the first backplane 30-1. The first blue LED chip 200B-1 and the first red LED chip 200R-1 are transferred to the first backplane 30-1, and the first blue LED chip 200B-1 and the first red LED chip 200B-1 on the first backplane 30-1 The red LED chip 200R-1 can be embedded in a portion lacking the first green LED chip 200G-1. Therefore, the first blue LED chip 200B-1 and the first red LED chip 200R-1 transferred to the first backplane 30-1 will not cause interference, and the first green transfer substrate 11G can be pressed against the first green LED chip 200R-1. 1 backplane 30-1. Next, the peeling layer 210 is selectively irradiated with laser light to peel the first green LED chip 200G-1.

Similarly, the first red transfer substrate 11R on which a part of the first red LED chip 200R-1 is transferred (that is, the first red transfer substrate 11R having a part lacking the first red LED chip 200R-1) is pressed. The first red LED chip 200R-1 is selectively peeled off against the second backplane 30-2. Also, the first blue transfer substrate 11B onto which a part of the first blue LED chip 200B-1 is transferred (that is, the first blue transfer substrate having a portion lacking the first blue LED chip 200B-1 11B) Press against the third backplane 30-3 to selectively peel off the first blue LED chip 200B-1.

In FIG. 3F, the first green transfer substrate 11G is separated from the first back plate 30-1. The selectively peeled first green LED chip 200G-1 is transferred from the first green transfer substrate 11G to the first backplane 30-1.

Similarly, the first red transfer substrate 11R is separated from the second backplane 30-2, and the selectively peeled first red LED chip 200R-1 is transferred to the second backplane 30-2. Also, similarly, the first blue transfer substrate 11B is separated from the third backplane 30-3, and the selectively peeled first blue LED chip 200B-1 is transferred to the third backplane.

Through the above steps, a plurality of LED chips 200 can be collectively transferred to each of the first backplane 30-1, the second backplane 30-2, and the third backplane 30-3. However, various defects occurred in the transfer of the LED chip 200 . In this case, the defective part can be repaired using the second transfer substrate 12 .

[2-3. Step of transferring LED chip 200 using the second transfer substrate 12] 4A to 4C are schematic diagrams illustrating the steps of transferring the second LED chip 200-2 using the second transfer substrate 12 in the method of transferring the LED chip 200 according to an embodiment of the present invention.

In FIG. 4A , in the region B1 of the first backplane 30 - 1 , a defect in which the LED chip 200 is missing occurs. That is, in the region B1, the first blue LED chip 200B-1 that should be transferred originally is missing.

Moreover, the defects in the area B1 include not only the defect that the first blue LED chip 200B-1 is not transferred, but also the defect found on the first blue LED chip 200B-1 on the first blue transfer substrate 11B, And the case of selectively not transferring the first blue LED chip 200B-1. In addition, when a defect is found in the transferred first blue LED chip 200B-1 and the transferred first blue LED chip 200B-1 is removed, it is also a defect in the area B1.

In FIG. 4B, the second blue transfer substrate 12B formed with the second blue LED chip 200B-2 is pressed against the first backplane 30-1, so that the connection on the second blue LED chip 200B-2 The member 220 is in close contact with the bonding member 310 of the first backplane 30-1. Next, the first blue LED chip 200B- 1 is selectively peeled off.

One second blue LED chip 200B- 2 is provided on the second blue transfer substrate 12B. That is, there is no thing protruding from the support substrate 100 around the second blue LED chip 200B-2. Therefore, the second blue LED chip 200B- 2 of the second blue transfer substrate 12B can be embedded in the region B1. That is, the first blue LED chip 200B-1, the first green LED chip 200G-1, and the first red LED chip 200R-1 transferred to the first backplane 30-1 will not cause interference, and the The second blue transfer substrate 12B is pressed against the first backplane 30-1.

Furthermore, the pressing force (or pressing amount) of the second blue transfer substrate 12B may be smaller than the pressing force (or pushing amount) of the first blue transfer substrate 11B. By setting such conditions, interference with the LED chip 200 transferred to the back plate 30 can be prevented.

In FIG. 4C, the second blue transfer substrate 12B is separated from the first back plate 30-1. In the region B1, the selectively peeled second blue LED chip 200B-2 is transferred from the second blue transfer substrate 12B to the first backplane 30-1.

Through the above steps, defective parts can be individually repaired using the second transfer substrate 12

The LED chip forming substrate 10 includes: a first region 110 for disposing the LED chips 200 with a first pitch p1 for collective transfer; and a second region 120 for having a larger pitch than the first pitch p1 The LED chips 200 are arranged in a manner of the second pitch p2. Moreover, the LED chip formation board|substrate 10 is divided into the 1st transfer board|substrate 11 which can collectively transfer the LED chip 200, and the 2nd transfer board|substrate 12 which can transfer the LED chip 200 individually, and is used. In particular, the second transfer substrate 12 can be used for repairing defective parts. That is, the LED chip formation substrate 10 forms the LED chips 200 having at least two pitches on one support substrate 100 without separately manufacturing the LED chips 200 for repair. In addition, since the pitch of the LED chips formed on the LED chip forming substrate 10 is adjusted, handling at the time of repair is easy. Therefore, the transfer of the LED chip using the LED chip forming substrate 10 can improve the yield of repairing defective parts and suppress the manufacturing cost.

＜Second Embodiment＞ Referring to FIG. 5 , a method of transferring an LED chip 200 different from that of the first embodiment will be described. Hereinafter, when the method of transferring the LED chip 200 of the present embodiment includes the same steps as the method of transferring the LED chip 200 of the first embodiment, description thereof may be omitted.

FIG. 5 is a schematic diagram illustrating the steps of repair in the method of transferring the LED chip 200 according to one embodiment of the present invention.

In FIG. 5 , in the region C1 of the backplane 30 , a defect in which the LED chip 200 is missing occurs. That is, in the region C1, the first blue LED chip 200B- 1 that should be originally transferred is missing. In this case, the thickness of the bonding member 310A in the region C1 is made larger than the thickness of the bonding member 310 on which the LED chip 200 is transferred. For example, the bonding member 310A may be newly formed in the region C1 , or the bonding member 310 may be further coated with solder to form the bonding member 310A.

In this embodiment, when the second blue transfer substrate 12B is pressed against the back plate 30, the thickness of the bonding member 310A can be bonded to the bonding member 310 between the second blue transferring substrate 12B and the back plate 30. Excessive gaps are formed due to the difference in thickness. Therefore, the second blue transfer substrate 12B can be pressed against the back plate 30 without contacting the LED chip 200 already transferred to the back plate 30 . Therefore, in the region C1 , the pressure can be concentrated on the second blue LED chip 200B- 2 , and the second blue LED chip 200B- 2 can be reliably transferred to the back plate 30 .

＜Third Embodiment＞ Referring to FIG. 6, the method of transferring the LED chip 200 which is different from the first embodiment and the second embodiment will be described. Hereinafter, when the method of transferring the LED chip 200 of the present embodiment includes the same steps as those of the method of transferring the LED chip of the first embodiment and the second embodiment, description thereof may be omitted.

In FIG. 6 , in the region D1 of the backplane 30 , the defect that the LED chip 200 is missing occurs. That is, in the area D1, the first blue LED chip 200B- 1 that should be originally transferred is missing. In this case, the thickness of the connection member 220A on the second blue LED chip 200B-2 of the second blue transfer substrate 12B is greater than the thickness of the connection member 220 on the first blue LED chip 200B-1. For example, the connection member 220A having a thickness different from that of the connection member 220 can be formed on the second LED chip formed in the second region 120 of the LED chip formation substrate 10, and the connection member 220 can be further coated with solder to form a connection member. 220A.

In this embodiment, when the second blue transfer substrate 12B is pressed against the back plate 30, the thickness of the connection member 220A and the connection member 220 can be between the second blue transfer substrate 12B and the back plate 30. Excessive gaps are formed due to the difference in thickness. Therefore, the second blue transfer substrate 12B can be pressed against the back plate 30 without contacting the LED chip 200 already transferred to the back plate 30 . Therefore, in the region D1, the pressure can be concentrated on the second blue LED chip 200B- 2 , and the second blue LED chip 200B- 2 can be reliably transferred to the back plate 30 .

As an embodiment of the present invention, the above-mentioned embodiments can be implemented in combination as appropriate unless they contradict each other. Moreover, additions, deletions, or design changes of components, or additions, omissions, or changes in conditions are appropriately performed by those skilled in the art based on each embodiment, as long as they have the gist of the present invention, they are all included in the present invention. within the range.

Even if other effects are different from the effects brought about by the aspects of the above-mentioned embodiments, if they are obvious from the description of this specification or can be easily predicted by those skilled in the art, they should be understood as It is the effect brought by the present invention.

10: LED chip forming substrate 11: The first transfer substrate 11B: The first blue transfer substrate 11G: The first green transfer substrate 11R: The first red transfer substrate 12: The second transfer substrate 12B: The second blue transfer substrate 30: Backplane 30-1: The first backplane 30-2: The second backplane 30-3: The third backplane 100: support substrate 110: Area 1 120:Second area 200-1: The first LED chip 200-2: The second LED chip 200B: blue LED chip 200B-1: The first blue LED chip 200B-2: The second blue LED chip 200G: Green LED chip 200G-1: The first green LED chip 200R: red LED chip 200R-1: The first red LED chip 210: peeling layer 220, 220A: connecting member 310, 310A: followed by components A1-A2: line B1,C1,D1: area p1: 1st pitch p2: 2nd pitch

Fig. 1A is a schematic plan view of an LED chip formation substrate according to an embodiment of the present invention. Fig. 1B is a schematic cross-sectional view of an LED chip forming substrate according to an embodiment of the present invention. Fig. 2 is a schematic diagram illustrating cutting of an LED chip forming substrate in a method of transferring an LED chip according to an embodiment of the present invention. FIG. 3A is a schematic diagram illustrating a step of transferring a first LED chip using a first transfer substrate in a method for transferring an LED chip according to an embodiment of the present invention. FIG. 3B is a schematic view illustrating the step of transferring the first LED chip using the first transfer substrate in the method of transferring the LED chip according to the embodiment of the present invention. FIG. 3C is a schematic view illustrating the step of transferring the first LED chip using the first transfer substrate in the method for transferring the LED chip according to the embodiment of the present invention. FIG. 3D is a schematic diagram illustrating the step of transferring the first LED chip using the first transfer substrate in the method of transferring the LED chip according to the embodiment of the present invention. FIG. 3E is a schematic diagram illustrating the step of transferring the first LED chip using the first transfer substrate in the method of transferring the LED chip according to the embodiment of the present invention. FIG. 3F is a schematic diagram illustrating the step of transferring the first LED chip using the first transfer substrate in the method for transferring the LED chip according to the embodiment of the present invention. FIG. 4A is a schematic view illustrating a step of transferring a second LED chip using a second transfer substrate in the method for transferring an LED chip according to an embodiment of the present invention. FIG. 4B is a schematic diagram illustrating a step of transferring a second LED chip using a second transfer substrate in the method for transferring an LED chip according to an embodiment of the present invention. FIG. 4C is a schematic diagram illustrating the step of transferring the second LED chip using the second transfer substrate in the method of transferring the LED chip according to the embodiment of the present invention. Fig. 5 is a schematic diagram illustrating the steps of repair in the LED chip transfer method according to one embodiment of the present invention. Fig. 6 is a schematic diagram illustrating the steps of repair in the LED chip transfer method according to one embodiment of the present invention.

10: LED chip forming substrate

100: support substrate

110: Area 1

120:Second area

A1-A2: line

Claims (13)

An LED chip forming substrate, comprising: a first region including a plurality of first LED chips arranged with a first pitch along a first direction; and The second area, which is located in the peripheral portion of the first area, includes a plurality of second LED chips arranged with a second pitch larger than the first pitch along the first direction; and The first LED chip and the second LED chip have the same luminescent color. The LED chip forming substrate according to claim 1, wherein the number of the plurality of second LED chips is not less than 0.1% and not more than 10% of the number of the plurality of first LED chips. The LED chip forming substrate according to claim 1, wherein the second pitch is not less than 1 mm and not more than 5 mm. The LED chip forming substrate according to claim 1, wherein a plurality of the aforementioned second regions are provided. The LED chip forming substrate according to any one of claims 1 to 4, wherein the length of one side of the first LED chip and the second LED chip is not less than 1 μm and not more than 100 μm. A method for transferring an LED chip, comprising the following steps: separating the LED chip forming substrate including the first region and the second region into a first transferring substrate including the first region and a substrate including the plurality of second LED chips One second transfer substrate, and the first region includes a plurality of first LED chips arranged with a first pitch along the first direction, the second region is located at the periphery of the first region, including along the first direction A plurality of second LED chips arranged with a second pitch larger than the aforementioned first pitch in one direction; Using the aforementioned first transfer substrate, transfer one or more of the plurality of first LED chips to the backplane, Using the second transfer substrate, one of the plurality of second LED chips is transferred to the backplane. The method for transferring LED chips according to claim 6, wherein the first LED chip and the second LED chip have the same luminescent color. The method for transferring LED chips according to claim 6, wherein the number of the plurality of second LED chips is not less than 0.1% and not more than 10% of the number of the plurality of first LED chips. The LED chip transfer method according to claim 6, wherein the length of one side of the second transfer substrate is not less than 1 mm and not more than 5 mm. The LED chip transfer method according to Claim 6, wherein the LED chip formation substrate is separated into a plurality of the second transfer substrates. The LED chip transfer method according to claim 6, wherein the length of one side of the first LED chip and the second LED chip is not less than 1 μm and not more than 100 μm. The method for transferring LED chips according to any one of claims 6 to 11, wherein the transfer using the first transfer substrate is achieved by pressing the first transfer substrate against the back plate by using the first press. conduct, The transfer using the second transfer substrate is performed by pressing the second transfer substrate against the back plate by the second press, The second pressing is smaller than the first pressing. The LED chip transfer method according to any one of claims 6 to 11, wherein in the transfer using the first transfer substrate, it is arranged on one or a plurality of each of the plurality of first LED chips The first connecting member is attached to the aforementioned back plate, In the transfer using the second transfer substrate, the second connection member provided on one of the plurality of second LED chips is bonded to the back plate, The thickness of the aforementioned second connecting member is greater than the thickness of the aforementioned first connecting member.

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