TW202315171A - Packaging structure to reduce quantum dot decay and method thereof - Google Patents

Abstract

The invention is a packaging structure that can emit light and prevent quantum dots from decay. It includes a light-emitting layer. The light-emitting layer further includes at least one substrate and a light-emitting chip. The light-emitting chip is located on the substrate and is electrically connected to the substrate. A first protective layer, the first protective layer is located on the light-emitting chip; a quantum dot layer, the quantum dot layer is located on the first protective layer; and a second protective layer, the second protective layer located on the quantum dot layer.

Description

A packaging structure and method for reducing quantum dot decay

The invention relates to a light-emitting structure and its method; in particular, to a package structure and method for reducing decay of quantum dots. The package structure utilizes quantum dots with a protective layer to prolong the life of quantum dots.

It is known that quantum dots are widely used in luminescence, but because quantum dots need to be close to the light source to operate at high temperature, the lifespan of quantum dots is generally not normal at present. The decline of quantum dots. Therefore, how to solve high temperature and package penetration is a problem that the industry needs to overcome urgently.

In view of the above-mentioned creation background, in order to meet the special needs of the industry, the present invention relates to a packaging structure that reduces the decay of quantum dots to solve the unachievable goals of the above-mentioned traditional techniques.

The invention provides a packaging method for reducing quantum dot decay, which Including: providing a light-emitting layer, the light-emitting layer further includes at least one light-emitting chip; forming at least one first protection layer and completely sealing it on the light-emitting layer; forming at least one quantum dot layer and completely sealing it on the first protection layer; and forming at least one second protective layer and completely sealing on the quantum dot layer; and forming at least one fifth water blocking layer, the fifth water blocking layer is completely sealed and surrounds the light emitting layer, the first protective layer, and the quantum dots layer and the second protective layer, wherein the composition of the fifth water blocking layer further includes perfluoropolyether and its derivatives.

According to another aspect of the above invention, a first support layer is formed in the first protective layer between the light emitting layer and the quantum dot layer, wherein the first support layer may include a plurality of fluorescent particles.

According to another aspect of the above-mentioned invention, wherein the second protective layer forms a third water-blocking layer, the third water-blocking layer is arranged between the quantum dot layer and the second support layer, and the second protective layer A fourth water blocking layer is formed, the fourth water blocking layer is arranged on the second supporting layer on a different side from the quantum dot layer, wherein the composition of the third water blocking layer and the fourth water blocking layer are different Contains perfluoropolyethers and their derivatives.

According to another aspect of the above-mentioned invention, a second support layer is formed in the second protection layer.

According to another aspect of the above-mentioned invention, wherein the second protective layer forms a third water-blocking layer, the third water-blocking layer is arranged between the quantum dot layer and the second support layer, and the second protective layer forming a fourth water-blocking layer, the fourth water-blocking layer is set on the second supporting layer on a side different from the quantum dot layer, and its Among them, the components of the third water blocking layer and the fourth water blocking layer further include perfluoropolyether and its derivatives.

According to another aspect of the above-mentioned present invention, the light-emitting chip is a blue light chip or a flip-chip chip.

According to another aspect of the above-mentioned invention, wherein the first support layer and the second support layer are transparent structures formed by curing procedures of transparent glue, silicon glue, epoxy resin or a combination thereof, and the package is a package on carrier (COB) ) or chip-level packaging (CSP), the packaging is in the state of chip-level packaging (CSP), forming at least one sixth water-blocking layer and completely sealing on the light-emitting layer opposite to the first protective layer, wherein the sixth The composition of the water blocking layer further includes perfluoropolyether and its derivatives.

The present invention provides a packaging structure for reducing quantum dot decay, which includes: a light-emitting layer, the light-emitting layer further includes at least one light-emitting chip; a first protective layer, the first protective layer is located on the light-emitting chip; a quantum dot A dot layer, the quantum dot layer is located on the first protective layer; a second protective layer, the second protective layer is located on the quantum dot layer; and a fifth water blocking layer, the fifth water blocking layer is complete The luminescent layer, the first protective layer, the quantum dot layer and the second protective layer are sealed and surrounded, wherein the composition of the fifth water blocking layer further includes perfluoropolyether and its derivatives.

According to another aspect of the above invention, the first protection layer further includes a first supporting layer, wherein the first supporting layer may include a plurality of fluorescent particles.

According to another aspect of the above-mentioned invention, the first protective layer is more Including a first water blocking layer, the first water blocking layer is located between the luminescent layer and the first supporting layer, and the first protective layer further includes a second water blocking layer, the second water blocking layer is To be located between the quantum dot layer and the first supporting layer, wherein the components of the first water blocking layer and the second water blocking layer further include perfluoropolyether and its derivatives.

According to another aspect of the above-mentioned invention, the second protection layer further includes a second support layer.

According to another aspect of the above-mentioned invention, the second protective layer further includes a third water-blocking layer, the third water-blocking layer is located between the quantum dot layer and the second support layer, and the second protective layer It further includes a fourth water blocking layer, the fourth water blocking layer is located on the side of the second support layer different from the quantum dot layer, wherein the composition of the third water blocking layer and the fourth water blocking layer are different Contains perfluoropolyethers and their derivatives.

According to another aspect of the above-mentioned present invention, the light-emitting chip is a blue light chip or a flip-chip chip.

According to another aspect of the above-mentioned invention, the first supporting layer and the second supporting layer are transparent structures formed by curing procedures of transparent glue, silicone rubber, epoxy resin or a combination thereof.

According to another aspect of the above-mentioned invention, wherein, the package is a package on board (COB) or a chip-level package (CSP), and the package is in the state of a chip-level package (CSP), and further includes a sixth water-blocking layer and is complete Sealed on the light-emitting layer and opposite to the first protective layer, in one case, the composition of the sixth water-blocking layer further includes perfluoropolymer ethers and their derivatives.

According to another state of the above-mentioned invention, the wafers of the invention and the known technology are respectively made into a light board, as shown in Figure 12A and 12B, after being lit, as shown in Figure 13A and 13B, after adding a diffuser plate respectively The displayed results are shown in Figures 14A and 14B. The samples shown in Figures 14A and 14B were tested, and the results were 318.5cd/m ² and 274.5cd/m ² respectively. This creation is based on adding a small amount of phosphor powder, which can effectively improve the brightness of the product.

The above comparative test system uses 1 diffuser plate, 2 sapphire plates, and 2% transmittance LCD screen in the diaphragm structure. The test current uses a single chip 2.88V and 0.5AOD8. The detection equipment uses a BM-7 luminance meter, and the BM-7 test height is 350mm , the test angle is 2 degrees. As shown in Figures 15A and 15B, they are the appearance diagrams of the lamp beads made by the chip of the present invention and the conventional technology respectively. The part of the blue coil in the lower right figure of Figure 15A is phosphor powder.

100: Encapsulation structure to reduce decay of quantum dots

110: luminous layer

111: Substrate

112: Light emitting chip

120: The first protective layer

130: Quantum dot layer

140: second protective layer

122: The first support layer

121: The first water blocking layer

123: Second water blocking layer

142: Second support layer

141: The third water blocking layer

143: The fourth water blocking layer

150: fifth water blocking layer

200: Encapsulation structure to reduce decay of quantum dots

210: luminous layer

212: Light emitting chip

220: The first protective layer

230: Quantum dot layer

240: second protective layer

222: The first support layer

221: The first water blocking layer

223: Second water blocking layer

242: second support layer

241: The third water blocking layer

243: The fourth water blocking layer

250: fifth water blocking layer

260: The sixth water blocking layer

300:Encapsulation method to reduce quantum dot decay

310: Provide a luminous layer

320: forming at least one first protective layer

330: forming at least one quantum dot layer

340: forming at least one second protective layer

322: forming a first support layer

321: forming a first water blocking layer

323: forming a second water blocking layer

342: forming a second support layer

341: forming a third water blocking layer

343 form a fourth water blocking layer

350: forming a fifth water-blocking layer

360: form a sixth water-blocking layer

[FIG. 1] is a schematic sectional view of an embodiment according to the present invention.

[Fig. 2] is a flow chart according to an embodiment of the present invention.

[FIG. 3] is a schematic diagram of an encapsulation method capable of emitting light and preventing quantum dots from decaying according to an embodiment of the present invention.

[Fig. 4] is a trend diagram of the luminous flux in the high temperature aging test according to one embodiment of the present invention.

[Fig. 5] is a trend diagram of luminous flux in a high temperature aging test of a traditional package according to the present invention.

[Fig. 6] is a color temperature trend diagram of a high-temperature aging test according to an embodiment of the present invention.

[FIG. 7] is a color temperature trend diagram of a traditional packaging high-temperature aging test according to the present invention.

[FIG. 8] is a state diagram before a high-temperature aging test according to an embodiment of the present invention.

[FIG. 9] is a state diagram after a high-temperature aging test according to an embodiment of the present invention.

[FIG. 10] is a state diagram of a conventional package before a high-temperature aging test according to the present invention.

[FIG. 11] is a state diagram of a conventional package after a high-temperature aging test according to the present invention.

[FIG. 12A] is a state diagram of a light board made according to an embodiment of the present invention.

[FIG. 12B] is a state diagram of a light board made from a conventional package according to the present invention.

[FIG. 13A] is a lighting state diagram of a lamp panel made according to an embodiment of the present invention.

[Fig. 13B] is a lighted state diagram of a lamp panel made according to one of the traditional packages of the present invention.

[FIG. 14A] is a state diagram of making a light board lighted and a diffuser plate according to an embodiment of the present invention.

[FIG. 14B] is a traditional packaging according to the present invention to make a lamp panel lighted plus a state diagram of the diffusion plate.

[Fig. 15A] is an appearance diagram of a lamp bead made according to an embodiment of the present invention.

[FIG. 15B] is an appearance diagram of a lamp bead made according to a traditional package of the present invention.

The direction of the present invention discussed here is applied to the encapsulation structure for reducing the decay of quantum dots. In order to thoroughly understand the present invention, the detailed structure and its components and method steps will be provided in the following description. Clearly, implementation of the present invention is not limited to specific details familiar to those skilled in the art of packaging structures applied to quantum dot decay reduction. On the other hand, well-known structures and elements thereof have not been described in detail in order not to unnecessarily limit the present invention. In addition, in order to provide a clearer description and enable those familiar with the art to understand the creation content of this model, the various parts in the illustration are not drawn according to their relative sizes, and the ratio of certain sizes to other related scales will be highlighted The exaggerated and irrelevant details are not fully drawn in order to simplify the diagram. The preferred embodiments of the present invention will be described in detail as follows. However, in addition to these detailed descriptions, the present invention can also be widely implemented in other embodiments, and the scope of the present invention is not limited, which is subject to the scope of the following patents.

Please refer to FIG. 1, the present invention is a packaging structure 100 for reducing the decay of quantum dots, which includes: a light emitting layer 110, the light emitting layer 110 further includes at least one substrate 111 and a light emitting chip 112, the light emitting chip 112 It is arranged on the substrate 111 and electrically connected with the substrate 111; a first protective layer 120, the first protective layer is located on the light-emitting chip 112; a quantum dot layer 130, the quantum dot Layer 130 is located on the first protective layer 120; a second protective layer 140, the second protective layer is located on the quantum dot layer 130; and a fifth water blocking layer 150, the fifth water blocking layer 150 is complete The sealing surrounds the light emitting layer 110 , the first support layer 120 , the quantum dot layer 130 and the second protection layer 140 .

As mentioned above, the first protective layer further includes a first support layer 122, wherein the first protective layer 120 further includes a first water blocking layer 121, and the first water blocking layer 121 is located between the light emitting layer 130 and the first supporting layer. Among the layers 122 , the first protection layer further includes a second water blocking layer 123 , and the second water blocking layer 123 is located between the quantum dot layer 130 and the first supporting layer 122 .

As mentioned above, the second protective layer 140 further includes a second support layer 142, wherein the second protective layer 140 further includes a third water blocking layer 141, the third water blocking layer 141 is located between the quantum dot layer 130 and the second Between the two supporting layers 142 , the second protection layer 140 further includes a fourth water blocking layer 143 , and the fourth water blocking layer 143 is located on a side different from the quantum dot layer 130 on the second supporting layer 142 .

As mentioned above, the light emitting chip 112 is a blue light chip or a flip chip.

As mentioned above, the first support layer 122 and the second support layer 142 are transparent structures formed by curing procedures of transparent glue, silicone glue, epoxy resin or a combination thereof, wherein the first support layer 122 may contain a plurality of phosphors. particles.

As mentioned above, the package is a carrier package (COB) or a chip-level package (CSP). The package is in a chip-level package (CSP) state, and further includes a sixth water-blocking layer 160 that is completely sealed on the light-emitting layer 110 and The first protective layer 120 is opposite to each other.

As mentioned above, the first water blocking layer 121, the second water blocking layer 123, the third The components of the water blocking layer 141 , the fourth water blocking layer 143 and the fifth water blocking layer 150 further include perfluoropolyethers (PFPE for short) and derivatives thereof.

Please refer to FIG. 2, the present invention is a packaging structure 200 for reducing the decay of quantum dots, which includes: a light emitting layer 210, which further includes a light emitting chip 212; a first protective layer 220, the first protective layer 220 A protective layer is located on the light-emitting chip 212; a quantum dot layer 230, the quantum dot layer 230 is located on the first protective layer 220; a second protective layer 240, the second protective layer is located on the quantum dot layer 230 ; and a fifth water blocking layer 250 , the fifth water blocking layer 250 completely seals and surrounds the light emitting layer 210 , the first support layer 220 , the quantum dot layer 130 and the second protection layer 240 .

As mentioned above, the first protective layer further includes a first support layer 222, wherein the first protective layer 220 further includes a first water blocking layer 221, and the first water blocking layer 221 is located between the light emitting layer 230 and the first supporting layer. Between the layers 222 , the first protection layer further includes a second water blocking layer 223 , and the second water blocking layer 223 is located between the quantum dot layer 230 and the first supporting layer 222 .

As mentioned above, the second protective layer 240 further includes a second supporting layer 242, wherein the second protective layer 240 further includes a third water blocking layer 241, the third water blocking layer is located between the quantum dot layer 230 and the second Between the supporting layers 242 , the second protective layer 240 further includes a fourth water blocking layer 243 , and the fourth water blocking layer 243 is located on a side different from the quantum dot layer 230 on the second supporting layer 242 . As mentioned above, the light emitting chip 212 is a blue light chip or a flip chip. As mentioned above, the first support layer 222 and the second support layer 242 are made of transparent glue, silicone glue, epoxy resin or a combination thereof through curing process. The transparent structure formed by the sequence. As mentioned above, the package is in the state of Chip Scale Package (CSP), and further includes a sixth water blocking layer 260 completely sealed on the light emitting layer 20 and opposite to the first protection layer 220 .

As mentioned above, the components of the first water blocking layer 221, the second water blocking layer 223, the third water blocking layer 241, the fourth water blocking layer 243, the fifth water blocking layer 250 and the sixth water blocking layer 260 further include perfluorinated Polyether (Perfluoropolyethers, abbreviated as PFPE) and its derivatives.

Please refer to Figures 2 and 3, the present invention is a packaging method 300 capable of emitting light and preventing quantum dots from decaying, which includes: providing a light emitting layer 310, and the light emitting layer 210 further includes at least one light emitting chip 212; forming at least one light emitting chip 212; A first protective layer 320 is completely sealed on the luminescent layer 210; at least one quantum dot layer 330 is formed and completely sealed on the first protective layer 220; at least one second protective layer 340 is formed and completely sealed on the quantum dots layer 230 ; and at least one fifth water blocking layer 350 is formed, and the fifth water blocking layer 250 completely seals and surrounds the light emitting layer 210 , the first support layer 220 , the quantum dot layer 230 and the second protection layer 240 .

As mentioned above, a first supporting layer 322 is formed in the first protective layer 220 between the light-emitting layer 210 and the quantum dot layer 230, and a first water-blocking layer 321 is formed in the first protective layer 220 on the light-emitting layer. 210 and the first support layer 222 , wherein a second water blocking layer 323 is formed in the first protection layer 220 between the quantum dot layer 230 and the first support layer 222 .

As mentioned above, a second supporting layer 342 is formed in the second protective layer 240, wherein the second protective layer 242 forms a third water blocking layer 341, and the third water blocking layer 241 is arranged between the quantum dot layer 230 and the second supporting layer 242, wherein the second protective layer 240 forms a fourth water blocking layer 343, and the fourth water blocking layer 243 is arranged on the second supporting layer 242 on a different side from the quantum dot layer 230.

As mentioned above, the light emitting chip 212 is a blue light chip or a flip chip.

As mentioned above, the first support layer 222 and the second support layer 242 are transparent structures formed by curing procedures of transparent glue, silicon glue, epoxy resin or a combination thereof, wherein the first support layer 222 may contain a plurality of phosphors. particles.

As mentioned above, the package is a carrier package (COB) or a chip-level package (CSP), and the package is in a chip-level package (CSP) state, at least one sixth water-blocking layer 360 is formed and completely sealed on the light-emitting layer and the The first protective layer is opposite.

Please refer to FIG. 3, the present invention is a packaging method 300 for reducing quantum dot decay, which includes: providing a light emitting layer 310, the light emitting layer 210 further includes at least one light emitting chip 212; forming at least one first protective layer 320 and completely sealed on the luminescent layer 210; forming at least one quantum dot layer 330 and completely sealing on the first protective layer 220; forming at least one second protective layer 340 and completely sealing on the quantum dot layer 230; and At least one fifth water blocking layer 350 is formed, and the fifth water blocking layer 350 completely seals and surrounds the light emitting layer 210 , the first protection layer 220 , the quantum dot layer 230 and the second protection layer 240 .

A first supporting layer 322 is formed in the above-mentioned first protective layer 220 between the light-emitting layer 210 and the quantum dot layer 230, and the first supporting layer 222 is cured by transparent glue, silicone rubber, epoxy resin or a combination thereof. In the transparent structure formed by the procedure, the first supporting layer 222 may contain a plurality of fluorescent particles.

In the above-mentioned first protection layer 220, a first water blocking layer 321 is formed between the luminescent layer 210 and the first supporting layer 222, and in the first protection layer 220, a second water blocking layer 323 is formed on the quantum between the dot layer 230 and the first support layer 222 .

A second support layer 342 is formed in the above-mentioned second protection layer 240 , and the second support layer 242 is a transparent structure formed by curing procedures of transparent glue, silicon glue, epoxy resin or a combination thereof.

The above-mentioned second protection layer forms a third water blocking layer 341, the third water blocking layer 241 is arranged between the quantum dot layer 230 and the second supporting layer 242, and the second protection layer forms a fourth water blocking layer 341. The water blocking layer 343 , the fourth water blocking layer 243 is disposed on a side different from the quantum dot layer 230 on the second supporting layer 242 .

The package mentioned above is a carrier package (COB) or a chip-level package (CSP). The package is in a chip-level package (CSP) state, at least one sixth water-blocking layer 360 is formed and completely sealed on the light-emitting layer 210 and The first protection layer 220 is opposite to each other.

The following is the comparison test of the package structure of the QD-with bracket CSP according to the present invention and the traditional package, and the high temperature aging test data at 85°C.

Figures 4 and 5 are drawn from the data in the table above. The encapsulation structure 200 for reducing the decay of quantum dots according to the present invention does not begin to significantly decrease the luminous flux until 570 hours. In contrast, the luminous flux will drop significantly when the traditional packaging time reaches 100 hours.

Figures 6 and 7 are drawn from the data in the table above. The packaging structure 200 for reducing the decay of quantum dots according to the present invention keeps the color temperature between 5300 and 5900 at all times. between. In contrast, the color temperature of the traditional packaging has been rising all the time until the test is stopped, and the color temperature rises from 5830 to 18452.

From Figs. 8 and 9, it is impossible to compare the difference of the high temperature aging test for the encapsulation structure 200 that reduces the decay of quantum dots. From Figures 10 and 11, it is easy to compare the difference between the high temperature aging test and the traditional package.

It can be seen that the encapsulation structure for reducing quantum dot decay of the present invention is 200 times better than the traditional encapsulation, and can effectively protect quantum dots from decay.

200: Encapsulation structure to reduce decay of quantum dots

210: luminous layer

212: Light emitting chip

220: The first protective layer

230: Quantum dot layer

240: second protective layer

222: The first support layer

221: The first water blocking layer

223: Second water blocking layer

242: second support layer

241: The third water blocking layer

243: The fourth water blocking layer

250: fifth water blocking layer

260: The sixth water blocking layer

Claims (6)

A wafer-level packaging structure for reducing the decay of quantum dots, comprising: a light-emitting layer, the light-emitting layer further includes at least one light-emitting chip; A first protective layer, the first protective layer is located on the light-emitting chip, wherein the first protective layer further includes a first support layer, and the first protective layer further includes a first water-blocking layer, the first water-blocking layer The layer system is located between the light emitting layer and the first supporting layer, and the first protective layer further includes a second water blocking layer, and the second water blocking layer is located between the quantum dot layer and the first supporting layer , wherein, the components of the first water blocking layer and the second water blocking layer further include perfluoropolyether and its derivatives; A quantum dot layer, the quantum dot layer is located on the first protective layer; A second protection layer, the second protection layer is located on the quantum dot layer, wherein the second protection layer further includes a second support layer, wherein the second protection layer further includes a third water blocking layer, the third blocking layer The water layer is located between the quantum dot layer and the second supporting layer, and the second protective layer further includes a fourth water blocking layer, and the fourth water blocking layer is located on the second supporting layer and the quantum On different sides of the dot layer, wherein the components of the third water blocking layer and the fourth water blocking layer further include perfluoropolyether and its derivatives; A fifth water-blocking layer, the fifth water-blocking layer is completely sealed around the luminescent layer, the first protective layer, the quantum dot layer and the second protective layer, wherein the composition of the fifth water-blocking layer further includes perfluorinated Polyether and its derivatives; and further comprising a sixth water blocking layer It is completely sealed on the luminescent layer and opposite to the first protective layer, wherein the sixth water blocking layer further includes perfluoropolyether and its derivatives. The encapsulation structure for reducing the decay of quantum dots according to claim 1, wherein the first support layer is a transparent structure formed by curing procedures of transparent glue, silicone, epoxy resin or a combination thereof, wherein the first support layer can contain multiple fluorescent particles. The encapsulation structure for reducing decay of quantum dots according to claim 1, wherein the second support layer is a transparent structure formed by curing procedures of transparent glue, silicon glue, epoxy resin or a combination thereof. A wafer-level packaging method for reducing quantum dot decay, comprising: providing a light-emitting layer, the light-emitting layer further comprising at least one light-emitting chip; Forming at least one first protective layer and completely sealing it on the light-emitting layer, wherein a first support layer is formed in the first protective layer between the light-emitting layer and the quantum dot layer, and a first protective layer is formed in the first protective layer The first water blocking layer is between the luminescent layer and the first supporting layer, and a second water blocking layer is formed in the first protective layer between the quantum dot layer and the first supporting layer, wherein the second The components of the first water blocking layer and the second water blocking layer further include perfluoropolyether and its derivatives; forming at least one quantum dot layer and completely sealing it on the first protective layer; At least one second protective layer is formed and completely sealed on the quantum dot layer, wherein a second supporting layer is formed in the second protective layer, and the second protective layer forms a third water-blocking layer, and the third water-blocking layer is In order to be arranged between the quantum dot layer and the second supporting layer, and the second protective layer forms a fourth water blocking layer, the fourth water blocking layer is arranged on the second supporting layer together with the quantum dot layer On different sides, wherein the components of the third water blocking layer and the fourth water blocking layer further include perfluoropolyether and its derivatives; At least one fifth water blocking layer is formed, the fifth water blocking layer completely seals and surrounds the luminescent layer, the first protective layer, the quantum dot layer and the second protective layer, wherein the composition of the fifth water blocking layer further includes Perfluoropolyether and its derivatives; opposite to the first protective layer forming at least one sixth water-blocking layer and completely sealing on the light-emitting layer, wherein the composition of the sixth water-blocking layer further includes perfluoropolyether and its derivatives. The encapsulation method for reducing the decay of quantum dots as claimed in claim 4, wherein the first support layer is a transparent structure formed by curing procedures of transparent glue, silicone, epoxy resin or a combination thereof, wherein the first support layer can contain multiple fluorescent particles. The encapsulation method for reducing decay of quantum dots as claimed in claim 4, wherein the second supporting layer is a transparent structure formed by curing procedures of transparent glue, silicon glue, epoxy resin or a combination thereof.

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