TW202247496A - Packaging structure to reduce quantum dot decay and method thereof - Google Patents
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本發明係關於一種發光結構及其方法;特別關於一種降低量子點衰變的封裝結構及其方法,該封裝結構係利用具保護層的量子點,延長量子點壽命。 The invention relates to a light-emitting structure and its method; in particular, to a package structure and method for reducing decay of quantum dots. The package structure utilizes quantum dots with a protective layer to prolong the life of quantum dots.
已知技術量子點在發光的應用相當廣泛,但是由於量子點需要接近光源導致在高溫下運作,目前量子點的壽命普遍不常,一般推測的原因是水氣或氣體滲入量子點的封裝,導致量子點的衰退。因此,如何解決高溫與封裝滲入是工業界急需克服的問題。 It is known that quantum dots are widely used in luminescence, but because quantum dots need to be close to the light source to operate at high temperature, the lifespan of quantum dots is generally not normal at present. The decline of quantum dots. Therefore, how to solve high temperature and package penetration is a problem that the industry needs to overcome urgently.
鑒於上述之創作背景中,為符合產業上特別之需求,本發明係關於一種降低量子點衰變的封裝結構用以解決上述傳統技藝未能達成之標的。 In view of the above-mentioned creation background, in order to meet the special needs of the industry, the present invention relates to a packaging structure that reduces the decay of quantum dots to solve the unachievable goals of the above-mentioned traditional techniques.
本發明提供一種降低量子點衰變的封裝方法,其 包含:提供一發光層,該發光層更包含至少一發光晶片;形成至少一第一保護層並完整密封於該發光層上;形成至少一量子點層並完整密封於該第一保護層上;與形成至少一第二保護層並完整密封於該量子點層片上;與形成至少一第五阻水層,該第五阻水層完整密封環繞該發光層、該第一保護層、該量子點層與第二保護層。 The invention provides a packaging method for reducing quantum dot decay, which Including: providing a light-emitting layer, the light-emitting layer further includes at least one light-emitting chip; forming at least one first protection layer and completely sealing it on the light-emitting layer; forming at least one quantum dot layer and completely sealing it on the first protection layer; and forming at least one second protective layer and completely sealing on the quantum dot layer; and forming at least one fifth water blocking layer, the fifth water blocking layer is completely sealed and surrounds the light emitting layer, the first protective layer, and the quantum dots layer and the second protective layer.
根據上述本創作之另一樣態,其中第一保護層中形成一第一支撐層於該發光層與該量子點層之間,其中該第一支撐層可以包含複數個螢光顆粒。 According to another aspect of the above invention, a first support layer is formed in the first protective layer between the light emitting layer and the quantum dot layer, wherein the first support layer may include a plurality of fluorescent particles.
根據上述本創作之另一樣態,其中第一保護層中形成一第一阻水層於該發光層與該第一支撐層之間。 According to another aspect of the above invention, a first water blocking layer is formed in the first protective layer between the light emitting layer and the first supporting layer.
根據上述本創作之另一樣態,其中第一保護層中形成一第二阻水層於該量子點層與該第一支撐層之間。 According to another aspect of the above invention, a second water blocking layer is formed in the first protection layer between the quantum dot layer and the first supporting layer.
根據上述本創作之另一樣態,其中第二保護層中形成一第二支撐層。 According to another aspect of the above-mentioned invention, a second support layer is formed in the second protection layer.
根據上述本創作之另一樣態,其中第二保護層形成一第三阻水層,該第三阻水層係為設置在該量子點層與第二支撐層之間。 According to another aspect of the above invention, the second protective layer forms a third water blocking layer, and the third water blocking layer is disposed between the quantum dot layer and the second support layer.
根據上述本創作之另一樣態,其中第二保護層形成一第四阻水層,該第四阻水層係為設置在該第二支撐層上與該量子點層不同側。 According to another aspect of the above invention, the second protection layer forms a fourth water blocking layer, and the fourth water blocking layer is disposed on a side different from that of the quantum dot layer on the second supporting layer.
根據上述本創作之另一樣態,其中該發光晶片是 藍光晶片或覆晶式晶片。 According to another aspect of the above-mentioned invention, wherein the light-emitting chip is Blu-ray chip or flip chip.
根據上述本創作之另一樣態,其中該第一支撐層與該第二支撐層是由透明膠水、矽膠、環氧樹脂或其組合經固化程序所形成的透明結構該封裝是載板封裝(COB)或晶片級封裝(CSP),該封裝是晶片級封裝(CSP)狀態下,形成至少一第六阻水層並完整密封於該發光層上與該第一保護層相對。 According to another aspect of the above-mentioned invention, wherein the first support layer and the second support layer are transparent structures formed by curing procedures of transparent glue, silicon glue, epoxy resin or a combination thereof, and the package is a package on carrier (COB) ) or chip-level packaging (CSP), the packaging is in the state of chip-level packaging (CSP), forming at least one sixth water-blocking layer and completely sealing on the light-emitting layer and opposite to the first protective layer.
本發明提供一種一種降低量子點衰變的封裝結構,其包含:一發光層,該發光層更包含至少一發光晶片;一第一保護層,該第一保護層係位於該發光晶片上;一量子點層,該量子點層係位於該第一保護層上;一第二保護層,該第二保護層係位於該量子點層上;與一第五阻水層,該第五阻水層完整密封環繞該發光層、該第一保護層、該量子點層與第二保護層。 The present invention provides a packaging structure for reducing quantum dot decay, which includes: a light-emitting layer, the light-emitting layer further includes at least one light-emitting chip; a first protective layer, the first protective layer is located on the light-emitting chip; a quantum dot A dot layer, the quantum dot layer is located on the first protective layer; a second protective layer, the second protective layer is located on the quantum dot layer; and a fifth water blocking layer, the fifth water blocking layer is complete Sealing surrounds the light emitting layer, the first protection layer, the quantum dot layer and the second protection layer.
根據上述本創作之另一樣態,其中第一保護層更包含一第一支撐層,其中該第一支撐層可以包含複數個螢光顆粒。 According to another aspect of the above invention, the first protection layer further includes a first supporting layer, wherein the first supporting layer may include a plurality of fluorescent particles.
根據上述本創作之另一樣態,其中第一保護層更包含一第一阻水層,該第一阻水層係為位於該發光層與第一支撐層之間。 According to another aspect of the above-mentioned invention, the first protective layer further includes a first water blocking layer, and the first water blocking layer is located between the light emitting layer and the first supporting layer.
根據上述本創作之另一樣態,其中第一保護層更包含一第二阻水層,該第二阻水層係為位於該量子點層與第 一支撐層之間。 According to another aspect of the above-mentioned invention, the first protective layer further includes a second water-blocking layer, and the second water-blocking layer is located between the quantum dot layer and the second water-blocking layer. between a support layer.
根據上述本創作之另一樣態,其中第二保護層更包含一第二支撐層。 According to another aspect of the above-mentioned invention, the second protection layer further includes a second support layer.
根據上述本創作之另一樣態,其中第二保護層更包含一第三阻水層,該第三阻水層係為位於該量子點層與第二支撐層之間。 According to another aspect of the above-mentioned invention, the second protective layer further includes a third water-blocking layer, and the third water-blocking layer is located between the quantum dot layer and the second supporting layer.
根據上述本創作之另一樣態,其中第二保護層更包含一第四阻水層,該第四阻水層係為位於該第二支撐層上與該量子點層不同側。 According to another aspect of the above invention, the second protection layer further includes a fourth water blocking layer, and the fourth water blocking layer is located on a side different from that of the quantum dot layer on the second supporting layer.
根據上述本創作之另一樣態,其中該發光晶片是藍光晶片或覆晶式晶片。 According to another aspect of the above-mentioned present invention, the light-emitting chip is a blue light chip or a flip-chip chip.
根據上述本創作之另一樣態,其中該第一支撐層與該第二支撐層是由透明膠水、矽膠、環氧樹脂或其組合經固化程序所形成的透明結構。 According to another aspect of the above-mentioned invention, the first supporting layer and the second supporting layer are transparent structures formed by curing procedures of transparent glue, silicone rubber, epoxy resin or a combination thereof.
根據上述本創作之另一樣態,其中,該封裝是載板封裝(COB)或晶片級封裝(CSP),該封裝是晶片級封裝(CSP)狀態下,更包含一第六阻水層並完整密封於該發光層上與該第一保護層相對。 According to another aspect of the above-mentioned invention, wherein, the package is a package on board (COB) or a chip-level package (CSP), and the package is in the state of a chip-level package (CSP), and further includes a sixth water-blocking layer and is complete Sealed on the light-emitting layer and opposite to the first protection layer.
根據上述本創作之另一樣態,將本創作與習知技藝的晶片分別製成一燈板,如圖12A與12B所示,點亮後如圖13A與13B所示,分別加上擴散板後顯示結果如圖14A與14B所示。針對如圖14A與14B的樣品進行測試,分別得到318.5cd/m2 與274.5cd/m2,本創作係為加入微量螢光粉後,可以有效提昇產品亮度。 According to another aspect of the above-mentioned invention, the wafers of the invention and the known technology are respectively made into a light board, as shown in Figure 12A and 12B, after being lit, as shown in Figure 13A and 13B, after adding a diffuser plate The displayed results are shown in Figures 14A and 14B. The samples shown in Figures 14A and 14B were tested, and the results were 318.5cd/m 2 and 274.5cd/m 2 respectively. This creation is based on adding a small amount of phosphor powder, which can effectively improve the brightness of the product.
上述比較測試係為在膜片架構使用1擴散板、2稜鏡片、2%透過率液晶屏測試電流使用單晶片2.88V、0.5AOD8,檢測設備使用BM-7輝度計,BM-7测试高度350mm,测试角2度角。如圖15A與15B所示,分別係為本創作與習知技藝的晶片分別製成之燈珠外觀圖。如圖15A右下方圖藍色線圈的部分係為螢光粉。 The above comparative test system uses 1 diffuser plate, 2 sapphire plates, and 2% transmittance LCD screen in the diaphragm structure. The test current uses a single chip 2.88V and 0.5AOD8. The detection equipment uses a BM-7 luminance meter, and the BM-7 test height is 350mm , the test angle is 2 degrees. As shown in Figures 15A and 15B, they are the appearance diagrams of the lamp beads made by the chip of the present invention and the conventional technology respectively. The part of the blue coil in the lower right figure of Figure 15A is phosphor powder.
100:降低量子點衰變的封裝結構 100: Encapsulation structure to reduce decay of quantum dots
110:發光層 110: luminescent layer
111:基板 111: Substrate
112:發光晶片 112: Light emitting chip
120:第一保護層 120: The first protective layer
130:量子點層 130: Quantum dot layer
140:第二保護層 140: second protective layer
122:第一支撐層 122: The first support layer
121:第一阻水層 121: The first water blocking layer
123:第二阻水層 123: Second water blocking layer
142:第二支撐層 142: Second support layer
141:第三阻水層 141: The third water blocking layer
143:第四阻水層 143: The fourth water blocking layer
150:第五阻水層 150: fifth water blocking layer
200:降低量子點衰變的封裝結構 200: Encapsulation structure to reduce decay of quantum dots
210:發光層 210: luminescent layer
212:發光晶片 212: Light emitting chip
220:第一保護層 220: The first protective layer
230:量子點層 230: Quantum dot layer
240:第二保護層 240: second protective layer
222:第一支撐層 222: The first support layer
221:第一阻水層 221: The first water blocking layer
223:第二阻水層 223: Second water blocking layer
242:第二支撐層 242: second support layer
241:第三阻水層 241: The third water blocking layer
243:第四阻水層 243: The fourth water blocking layer
250:第五阻水層 250: fifth water blocking layer
260:第六阻水層 260: The sixth water blocking layer
300:降低量子點衰變的封裝方法 300:Encapsulation method to reduce quantum dot decay
310:提供一發光層 310: Provide a luminescent layer
320:形成至少一第一保護層 320: forming at least one first protective layer
330:形成至少一量子點層 330: forming at least one quantum dot layer
340:形成至少一第二保護層 340: forming at least one second protective layer
322:形成一第一支撐層 322: forming a first support layer
321:形成成一第一阻水層 321: forming a first water blocking layer
323:形成一第二阻水層 323: forming a second water blocking layer
342:形成一第二支撐層 342: forming a second support layer
341:形成一第三阻水層 341: forming a third water blocking layer
343形成一第四阻水層 343 form a fourth water blocking layer
350:形成一第五阻水層 350: forming a fifth water-blocking layer
360:形成一第六阻水層 360: form a sixth water-blocking layer
〔圖1〕係根據本發明之一實施例剖面示意圖。 [FIG. 1] is a schematic sectional view of an embodiment according to the present invention.
〔圖2〕係根據本發明之一實施例流程圖。 [Fig. 2] is a flow chart according to an embodiment of the present invention.
〔圖3〕係根據本發明之一實施例可發光且防止量子點衰變的封裝方法示意圖。 [FIG. 3] is a schematic diagram of an encapsulation method capable of emitting light and preventing quantum dots from decaying according to an embodiment of the present invention.
〔圖4〕係根據本發明之一實施例高溫老化測試光通量趨勢圖。 [Fig. 4] is a trend diagram of the luminous flux in the high temperature aging test according to one embodiment of the present invention.
〔圖5〕係根據本發明之一傳統封裝高溫老化測試光通量趨勢圖。 [Fig. 5] is a trend diagram of luminous flux in a high temperature aging test of a traditional package according to the present invention.
〔圖6〕係根據本發明之一實施例高溫老化測試色溫趨勢圖。 [Fig. 6] is a color temperature trend diagram of a high-temperature aging test according to an embodiment of the present invention.
〔圖7〕係根據本發明之一傳統封裝高溫老化測試色溫趨 勢圖。 [Fig. 7] is a color temperature trend of a traditional package high temperature aging test according to the present invention Potential diagram.
〔圖8〕係根據本發明之一實施例高溫老化測試前狀態圖。 [FIG. 8] is a state diagram before a high-temperature aging test according to an embodiment of the present invention.
〔圖9〕係根據本發明之一實施例高溫老化測試後狀態圖。 [FIG. 9] is a state diagram after a high-temperature aging test according to an embodiment of the present invention.
〔圖10〕係根據本發明之一傳統封裝高溫老化測試前狀態圖。 [FIG. 10] is a state diagram of a conventional package before a high-temperature aging test according to the present invention.
〔圖11〕係根據本發明之一傳統封裝高溫老化測試後狀態圖。 [FIG. 11] is a state diagram of a conventional package after a high-temperature aging test according to the present invention.
〔圖12A〕係根據本發明之一實施例製成一燈板狀態圖。 [FIG. 12A] is a state diagram of a light board made according to an embodiment of the present invention.
〔圖12B〕係根據本發明之一傳統封裝製成一燈板狀態圖。 [FIG. 12B] is a state diagram of a light board made from a conventional package according to the present invention.
〔圖13A〕係根據本發明之一實施例製成一燈板點亮狀態圖。 [FIG. 13A] is a lighting state diagram of a lamp panel made according to an embodiment of the present invention.
〔圖13B〕係根據本發明之一傳統封裝製成一燈板點亮狀狀態圖。 [Fig. 13B] is a lighted state diagram of a lamp panel made according to one of the traditional packages of the present invention.
〔圖14A〕係根據本發明之一實施例製成一燈板點亮加上擴散板狀態圖。 [FIG. 14A] is a state diagram of making a light board lighted and a diffuser plate according to an embodiment of the present invention.
〔圖14B〕係根據本發明之一傳統封裝製成一燈板點亮加上擴散板狀態圖。 [FIG. 14B] is a traditional packaging according to the present invention to make a lamp panel lighted plus a state diagram of the diffusion plate.
〔圖15A〕係根據本發明之一實施例製成之燈珠外觀圖。 [Fig. 15A] is an appearance diagram of a lamp bead made according to an embodiment of the present invention.
〔圖15B〕係根據本發明之一傳統封裝製成之燈珠外觀圖。 [FIG. 15B] is an appearance diagram of a lamp bead made according to a traditional package of the present invention.
本發明在此所探討的方向為應用於降低量子點衰變的封裝結構,為了能徹底地瞭解本新型,將在下列的描述中提出詳盡的結構及其元件與方法步驟。顯然地,本新型的施行並未限定於應用於降低量子點衰變的封裝結構之技藝者所熟習的特殊細節。另一方面,眾所周知的結構及其元件並未描述於細節中,以避免造成本新型不必要之限制。此外,為提供更清楚之描述及使熟悉該項技藝者能理解本新型之創作內容,圖示內各部分並沒有依照其相對之尺寸而繪圖,某些尺寸與其他相關尺度之比例會被突顯而顯得誇張,且不相關之細節部分亦未完全繪出,以求圖示之簡潔。本新型的較佳實施例會詳細描述如下,然而除了這些詳細描述之外,本新型還可以廣泛地施行在其他的實施例中,且本新型範圍不受限定,其以之後的專利範圍為準。 The direction of the present invention discussed here is applied to the encapsulation structure for reducing the decay of quantum dots. In order to thoroughly understand the present invention, the detailed structure and its components and method steps will be provided in the following description. Clearly, implementation of the present invention is not limited to specific details familiar to those skilled in the art of packaging structures applied to quantum dot decay reduction. On the other hand, well-known structures and elements thereof have not been described in detail in order not to unnecessarily limit the present invention. In addition, in order to provide a clearer description and enable those familiar with the art to understand the creation content of this model, the various parts in the illustration are not drawn according to their relative sizes, and the ratio of certain sizes to other related scales will be highlighted The exaggerated and irrelevant details are not fully drawn in order to simplify the diagram. The preferred embodiments of the present invention will be described in detail as follows. However, in addition to these detailed descriptions, the present invention can also be widely implemented in other embodiments, and the scope of the present invention is not limited, which is subject to the scope of the following patents.
請參閱第1圖所示,本發明係為一種降低量子點衰變的封裝結構100,其包含:一發光層110,該發光層110更包含至少一基板111與一發光晶片112,該發光晶片112係為設置在基板111上,並且與該基板111電性連結;一第一保護層120,該第一保護層係位於該發光晶片112上;一量子點層130,該量子點層130係位於該第一保護層120上;一第二保護層140,該第二保護層係位於該量子點層130上;與一第五阻水層150,該第五阻水層150完整密封環繞該發光層110、該第一支撐層120、該量子點層130與第二保護層140。
Please refer to FIG. 1, the present invention is a
如上述,第一保護層更包含一第一支撐層122,其
中第一保護層120更包含一第一阻水層121,該第一阻水層121係為位於該發光層130與第一支撐層122之間,其中第一保護層更包含一第二阻水層123,該第二阻水層123係為位於該量子點層130與第一支撐層122之間。
As mentioned above, the first protection layer further includes a first supporting
如上述,第二保護層140更包含一第二支撐層142,其中第二保護層140更包含一第三阻水層141,該第三阻水層係為位於該量子點層130與第二支撐層142之間,其中第二保護層140更包含一第四阻水層143,該第四阻水層143係為位於該第二支撐層142上與該量子點層130不同側。
As mentioned above, the second
如上述,發光晶片112是藍光晶片或覆晶式晶片。
As mentioned above, the
如上述,第一支撐層122與該第二支撐層142是由透明膠水、矽膠、環氧樹脂或其組合經固化程序所形成的透明結構,其中該第一支撐層122可以包含複數個螢光顆粒。
As mentioned above, the
如上述,封裝是載板封裝(COB)或晶片級封裝(CSP),該封裝是晶片級封裝(CSP)狀態下,更包含一第六阻水層160並完整密封於該發光層110上與該第一保護層120相對
As mentioned above, the package is a carrier package (COB) or a chip-level package (CSP). The package is in a chip-level package (CSP) state, and further includes a sixth water-blocking layer 160 that is completely sealed on the light-emitting
請參閱第2圖所示,本發明係為一種降低量子點衰變的封裝結構200,其包含:一發光層210,該發光層210更包含一發光晶片212;一第一保護層220,該第一保護層係位於該發光晶片212上;一量子點層230,該量子點層230係位於該第一保護層220上;一第二保護層240,該第二保護層係位於該量子點層230上;與一第五阻水層250,該第五阻水層250完整密封環繞
該發光層210、該第一支撐層220、該量子點層130與第二保護層240。
Please refer to FIG. 2, the present invention is a
如上述,第一保護層更包含一第一支撐層222,其中第一保護層220更包含一第一阻水層221,該第一阻水層221係為位於該發光層230與第一支撐層222之間,其中第一保護層更包含一第二阻水層223,該第二阻水層223係為位於該量子點層230與第一支撐層222之間。
As mentioned above, the first protective layer further includes a
如上述,第二保護層240更包含一第二支撐層242,其中第二保護層240更包含一第三阻水層241,該第三阻水層係為位於該量子點層230與第二支撐層242之間,其中第二保護層240更包含一第四阻水層243,該第四阻水層243係為位於該第二支撐層242上與該量子點層230不同側。如上述,發光晶片212是藍光晶片或覆晶式晶片。
As mentioned above, the second
如上述,第一支撐層222與該第二支撐層242是由透明膠水、矽膠、環氧樹脂或其組合經固化程序所形成的透明結構。如上述,該封裝是晶片級封裝(CSP)狀態下,更包含一第六阻水層260並完整密封於該發光層20上與該第一保護層220相對。
As mentioned above, the first supporting
請參閱第2與3圖所示,本發明係為一種可發光且防止量子點衰變的封裝方法300,其包含:提供一發光層310,該發光層210更包含至少一發光晶片212;形成至少一第一保護層320並完整密封於該發光層210上;形成至少一量子點層330
並完整密封於該第一保護層220上;形成至少一第二保護層340並完整密封於該量子點層230上;與形成至少一第五阻水層350,該第五阻水層250完整密封環繞該發光層210、該第一支撐層220、該量子點層230與第二保護層240。
Please refer to Figures 2 and 3, the present invention is a
如上述,其中第一保護層220中形成一第一支撐層322於該發光層210與該量子點層230之間,其中第一保護層220中形成一第一阻水層321於該發光層210與該第一支撐層222之間,其中第一保護層220中形成一第二阻水層323於該量子點層230與該第一支撐層222之間。
As mentioned above, a first supporting layer 322 is formed in the first
如上述,第二保護層240中形成一第二支撐層342,其中第二保護層242形成一第三阻水層341,該第三阻水層241係為設置在該量子點層230與第二支撐層242之間,其中第二保護層240形成一第四阻水層343,該第四阻水層243係為設置在該第二支撐層242上與該量子點層230不同側。
As mentioned above, a second support layer 342 is formed in the second
如上述,發光晶片212是藍光晶片或覆晶式晶片。
As mentioned above, the
如上述,第一支撐層222與該第二支撐層242是由透明膠水、矽膠、環氧樹脂或其組合經固化程序所形成的透明結構,其中該第一支撐層222可以包含複數個螢光顆粒。
As mentioned above, the
如上述,封裝是載板封裝(COB)或晶片級封裝(CSP),該封裝是晶片級封裝(CSP)狀態下,形成至少一第六阻水層360並完整密封於該發光層上與該第一保護層相對。 As mentioned above, the package is a carrier package (COB) or a chip-level package (CSP), and the package is in a chip-level package (CSP) state, at least one sixth water-blocking layer 360 is formed and completely sealed on the light-emitting layer and the The first protective layer is opposite.
請參閱第3圖所示,本發明係為一種降低量子點衰
變的封裝方法300,其包含:提供一發光層310,該發光層210更包含至少一發光晶片212;形成至少一第一保護層320並完整密封於該發光層210上;形成至少一量子點層330並完整密封於該第一保護層220上;形成至少一第二保護層340並完整密封於該量子點層230片上;與形成至少一第五阻水層350,該第五阻水層350完整密封環繞該發光層210、該第一保護層220、該量子點層230與第二保護層240。
See also shown in the 3rd figure, the present invention is a kind of reducing quantum dot attenuation
A
上述之第一保護層220中形成一第一支撐層322於該發光層210與該量子點層230之間,該第一支撐層222是由透明膠水、矽膠、環氧樹脂或其組合經固化程序所形成的透明結構,其中該第一支撐層222可以包含複數個螢光顆粒。
A first supporting layer 322 is formed in the above-mentioned first
上述之第一保護層220中形成一第一阻水層321於該發光層210與該第一支撐層222之間,且該第一保護層220中形成一第二阻水層323於該量子點層230與該第一支撐層222之間。
In the above-mentioned
上述之第二保護層240中形成一第二支撐層342,該第二支撐層242是由透明膠水、矽膠、環氧樹脂或其組合經固化程序所形成的透明結構。
A second support layer 342 is formed in the above-mentioned
上述之第二保護層形成一第三阻水層341,該第三阻水層241係為設置在該量子點層230與第二支撐層242之間,且該第二保護層形成一第四阻水層343,該第四阻水層243係為設置在該第二支撐層242上與該量子點層230不同側。
The above-mentioned second protection layer forms a third water blocking layer 341, the third
上述之該封裝是載板封裝(COB)或晶片級封裝(CSP),該封裝是晶片級封裝(CSP)狀態下,形成至少一第六阻水層360並完整密封於該發光層210上與該第一保護層220相對。
The package mentioned above is a carrier package (COB) or a chip-level package (CSP). The package is in a chip-level package (CSP) state, at least one sixth water-blocking layer 360 is formed and completely sealed on the light-emitting
以下是QD-帶支架CSP本發明封裝結構與傳統封裝比對測試,在85℃進行高溫老化試驗數據。 The following is the comparison test of the package structure of the QD-with bracket CSP according to the present invention and the traditional package, and the high temperature aging test data at 85°C.
由上述表格數據做出第4與5圖,本發明之降低量子點衰變的封裝結構200,時間進行到570小時才開始光通量明顯下降。反觀傳統封裝時間進行到100小時光通量就很明顯下降。
Figures 4 and 5 are drawn from the data in the table above. The
由上述表格數據做出第6與7圖,本發明之降低量子點衰變的封裝結構200,全部時間色溫都保持在5300~5900之間。反觀傳統封裝全部時間色溫都一直上升直到停止測試時,色溫由5830上升到18452。
Figures 6 and 7 are drawn from the data in the table above. The
由第8與9圖無法比較出高溫老化試驗對於降低量子點衰變的封裝結構200的差異。由第10與11圖容易比較出高溫老化試驗對於傳統封裝的差異。
From Figs. 8 and 9, it is impossible to compare the difference of the high temperature aging test for the
由此可知本發明之降低量子點衰變的封裝結構200比傳統封裝,可以有效保護量子點不衰退。 It can be seen that the encapsulation structure for reducing quantum dot decay of the present invention is 200 times better than the traditional encapsulation, and can effectively protect quantum dots from decay.
200:降低量子點衰變的封裝結構 200: Encapsulation structure to reduce decay of quantum dots
210:發光層 210: luminescent layer
212:發光晶片 212: Light emitting chip
220:第一保護層 220: The first protective layer
230:量子點層 230: Quantum dot layer
240:第二保護層 240: second protective layer
222:第一支撐層 222: The first support layer
221:第一阻水層 221: The first water blocking layer
223:第二阻水層 223: Second water blocking layer
242:第二支撐層 242: second support layer
241:第三阻水層 241: The third water blocking layer
243:第四阻水層 243: The fourth water blocking layer
250:第五阻水層 250: fifth water blocking layer
260:第六阻水層 260: The sixth water blocking layer
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