TW202310915A - A semiconductor waste gas treatment system - Google Patents

Abstract

A semiconductor waste gas treatment system is composed of a vacuum pumping device, a plasma processing device and a wet scrubbing device. A two stages vacuum pumping is employed, such as a booster pump along with a dry pump. A low pressure plasma process is adopted and installed between the two pumps, leading to efficient gas reactions with a low energy consumption. Meanwhile, the back stream issues possibly caused by the plasma process is eliminated in this invention. Above all, a large flow of purge gas such as nitrogen usually used in a dry pump is not necessary, resulting in the reduction of the cost of pumping system and the amount of emission of NOx that is harmful to environment. In the last stage, a jet flow micro-bubble wet scrubber is used for the efficient absorption of gases and particles absorption; Moreover, it can generate a rough vacuum at the output port of the pump, which significantly increases the pumping efficiency and eliminates the particle blockage inside the pump.

Description

A semiconductor waste gas treatment system

The invention relates to a waste gas treatment system, in particular to a semiconductor waste gas treatment system.

The production process of semiconductors will use a large amount of flammable, corrosive or highly toxic reactive gases, but the utilization rate of reactive gases in many semiconductor processes is very low, so the residual gases and reaction products that have not completely reacted in the process must be Drain the reaction process chamber. These mixed gases are generally called process waste gas or exhaust gas, which must be converted into harmless or treatable substances before they can be discharged.

The current exhaust gas system is mainly composed of a turbo pump connected to the reaction process chamber, a mechanical pump and a local scrubber system. The process exhaust gas is sequentially extracted from the reaction process chamber through the turbo vacuum pump, exhaust pipe and mechanical pump, and then sent to the local exhaust gas treatment system for treatment and then sent to the central exhaust gas treatment system (central scrubber system) for discharge.

In order to properly treat process exhaust gas, many technologies have been proposed and used. For example, there is currently an existing technology that uses an air extraction pump to discharge the process exhaust gas to a combustion scrubber for exhaust gas treatment before discharging the process exhaust gas, such as Taiwan Patent No. I487872. However, combustion scrubbers are not effective in treating fluorine-containing compounds, and must be kept in operation at all times to provide a large amount of fuel gas, so the cost is greatly increased and energy is consumed, and the fuel gas is a flammable and explosive gas, which will increase public safety hazards. In addition, although there is another prior art that uses catalytic pyrolysis, the catalyst has problems of aging and poisoning, and the cost of replacing and recycling the catalyst is quite high. In addition, the catalytic pyrolysis method also needs to be kept in operation at all times and also consumes a lot of energy.

In addition, although there are currently technologies that use plasma torch scrubbers for waste gas treatment, such as Taiwan's invention patent No. I285066, plasma has been proven to effectively decompose process waste gases, especially for perfluorocarbons that require high-temperature treatment ( (Perfluorinated Compounds, PFCs). However, it operates under atmospheric pressure and consumes a lot of energy. At the same time, because the temperature of the plasma exceeds thousands of degrees, the system components are not only costly but also have a short service life. Especially the stability of atmospheric plasma is not good , it is easy to cause the problem of plasma extinguishment due to changes in operating conditions.

On the other hand, there are currently theoretical and technical proposals to install a plasma treatment device before the mechanical pump to treat the exhaust gas under low pressure. The results show that the high energy of the electrons can effectively dissociate the waste gas under low pressure. Although the treatment effect is good, but because the plasma treatment device is directly connected to the back end of the turbo vacuum pump, there will be doubts about the backflow of gas reactants to pollute the process, so Unacceptable for semiconductor processes and not currently used.

The current mechanical pumps usually adopt a two-stage combination, that is, the first stage is a booster pump (Booster Pump), and the second stage is a dry pump (Dry Pump). The booster pump can accelerate the system to reach a lower air pressure due to its high pumping rate, which is beneficial for the second-stage dry pump to achieve the operating set air pressure. Existing mechanical pump operation must introduce a large amount of purge gas (purge gas) such as nitrogen to dilute flammable, corrosive or highly toxic process exhaust gas in the second stage (rear stage) of the dry pump, and at the same time to slow down the generation in the process Pipeline blockage caused by solid particles. Due to the large gas flow, a high-power pump must be used, which will increase the operating cost and consume energy virtually. Moreover, if a large amount of nitrogen enters the current local exhaust gas treatment system such as a combustion type or a thermal reaction type scrubber, a large amount of greenhouse gases such as nitrogen oxides (NOx) will be generated, causing secondary pollution to the environment.

Furthermore, even if a large amount of purge gas is introduced, solid particles will still block the second stage (rear stage) of the dry pump in some processes, especially at its outlet. This will seriously reduce the pumping efficiency and increase the operating current of the dry pump, which will not only increase energy consumption and increase operating costs, but may even cause damage to the dry pump and cause process shutdown.

In order to solve the problems of the above-mentioned prior art, the purpose of the present invention is to provide a system that can effectively treat exhaust gas, and can reduce the energy consumption of mechanical pumps and greatly reduce the production of greenhouse gases such as nitrogen oxides (NOx), and can effectively Solve the problem of solid particle clogging to increase the service life of dry pumps. On the other hand, the present invention adopts low-pressure plasma waste gas treatment, and compared with normal-pressure plasma torch, low-pressure plasma is easy to ignite, has stable operation, low energy consumption, low component damage rate, and long maintenance period. More importantly, there is no problem of generated gas and particle backflow polluting the semiconductor process chamber, so it can be accepted by the current semiconductor process system.

Different from the previous technology, the semiconductor waste gas treatment system of the present invention includes a two-stage vacuum device, a plasma treatment chamber, a reaction gas supply chamber and a jet microbubble wet scrubbing device. At the same time, it also includes the integration of control signals to ensure that the plasma is activated only when there is process waste gas to be treated, and the operation mode of inputting mixed reaction gas is used to save energy and increase the service life of the plasma system.

In order to achieve the above-mentioned purpose, the present invention proposes a semiconductor waste gas treatment system, which is suitable for processing at least one process waste gas produced by the process waste gas source. It is characterized in that: the semiconductor waste gas treatment system is composed of a vacuum pumping device, a plasma treatment device and waste gas washing Composition of processing equipment. Wherein, the vacuum pumping device is a two-stage pump structure, which includes a first pump and a second pump. The first pump generates a first low-pressure environment to extract the process exhaust gas generated by the source of the process exhaust gas. The second pump generates a second low-pressure environment between the first pump and the second pump. The plasma treatment device is located in the second pump. 2. Under a low-pressure environment, a low-pressure plasma treatment is performed on the process waste gas, and at the same time, an appropriate mixed reaction gas is added to convert the process waste gas into a harmless, stable or water-soluble reaction gas, such as the treatment of CH ₄ and CHF ₃ The mixed gas is fed into water vapor, and the treatment efficiency (Destruction Removal Efficiency, DRE) can exceed 90%. NF ₃ is treated by mixing water and air. The water gas is dissociated into active particles of O, H, and OH by electrons in the plasma, and they can react with the NF _x particles of NF ₃ dissociated by the plasma. For example: OH + NF ₂ → NOF + HF, H + NF → N + HF, H + F → HF. However, HF can be effectively treated by wet scrubbing.

At the same time, low-pressure plasma treatment can also be used to miniaturize or remove solid particles carried by the process exhaust gas. For example, when using NF ₃ to clean the process chamber, mixed gases such as SiF ₄ , F, and NF _x will be generated, and the residuals from the previous process Particles of SiO ₂ are also mixed into the exhaust gas. These particles tend to aggregate together and convert into large particles, which are then deposited in the dry pump to form a blockage. If the plasma is excited before entering the dry pump to make SiO ₂ react with NF _x and F remaining in the exhaust gas, the size of SiO ₂ can be reduced so that it is not easy to accumulate in the pump as the gas is discharged.

Among them, the exhaust gas scrubbing device is a jet-type microbubble wet exhaust gas scrubbing device, which generates a third low-pressure environment at the outlet of the second pump by the principle of a Venturi tube, through which the third low-pressure environment improves The pumping efficiency of the second pump can greatly reduce the solid particles accumulated by the second pump. Finally, the mixed gas of the above-mentioned reaction-generated gas and particles is inhaled by the wet washing treatment device to further form microbubbles in the washing liquid, so that the washing liquid can fully dissolve the above-mentioned reaction-generated gas and capture the particles carried by the above-mentioned reaction-generated gas.

Among them, the vacuum pumping device is a two-stage vacuum device, and its first pump is installed between the process exhaust gas source and the plasma treatment device, so as to use the first pump to isolate the reaction generated after the low-pressure plasma treatment. Gases and particles are prevented from backflowing and polluting the exhaust gas source of the process.

Among them, the process exhaust gas is converted into a stable and safe gas by the plasma treatment device before being sucked into the second pump, or can be effectively treated by the wet scrubbing device connected behind, so in the old technology, the second pump ( Dry pump) must input a large flow of purge gas (such as nitrogen) to dilute flammable, corrosive or highly toxic process exhaust gas, which can greatly reduce the operation.

Among them, the plasma processing device is switched between the standby state and the operating state according to a control signal. When the process exhaust gas source starts to discharge the process exhaust gas, the plasma processing device is switched from the standby state to the operating state so as to operate in the first low-pressure environment. Next, low-pressure plasma treatment is performed on the process exhaust gas. When the process exhaust gas source stops discharging the process exhaust gas, the plasma treatment device is switched from the operating state to the standby state.

Wherein, when the plasma treatment device performs low-pressure plasma treatment on the process exhaust gas, it first mixes the process exhaust gas with a reaction gas according to the above-mentioned control signal.

Wherein, the plasma treatment device is a plasma treatment chamber and uses a mixer as a reaction gas supply chamber for introducing reaction gas so that the reaction gas is mixed with process exhaust gas.

Among them, the process exhaust gases are perfluorocarbons (PFCs), nitrogen oxides (NO _x ), sulfur hexafluoride (SF ₆ ), nitrogen trifluoride (NF ₃ ), ammonia (NH ₃ ), boroethane ( B ₂ H ₆ ), Hydrofluorocarbons (HFCs), Hydrocarbons (C _x H _y ) and/or CCl ₄ etc.

Among them, if the semiconductor process is an atomic layer deposition (Atomic layer deposition, ALD) process, the process waste gas is trimethylaluminum (TMA), tetrakis (ethylmethylamino) zirconium (TEMAZ) and/or tetrakis (ethylmethylamino) zirconium (TEMAZ) Amino) hafnium (TEMAH).

Wherein, the reaction gas may be oxygen (O ₂ ), helium (He), argon (Ar), nitrogen (N ₂ ), hydrogen (H ₂ ) and/or water (H ₂ O).

Wherein, the first pump of the vacuum suction device is a booster pump (Booster Pump), and the second pump of the vacuum suction device is a dry pump (Dry Pump).

Wherein, the air pressure of the first low-pressure environment generated by the first pump of the vacuum pumping device is 100 torr to 10 ^-3 torr.

Wherein, the pressure of the second low-pressure environment generated by the second pump of the vacuum pumping device is 100 torr to 10 ^-3 torr.

Wherein, the waste gas cleaning treatment device is a jet-type microbubble wet waste gas cleaning device, and the pressure of the third low-pressure environment generated by it is 400 torr to 600 torr.

Among them, the exhaust gas washing treatment device is a jet-type microbubble wet exhaust gas washing device, which includes: the treatment tank includes an inner tank and an outer tank for containing washing liquid; and a jet tube, wherein the washing liquid is sprayed into the treatment tank through the jet tube. In the inner tank, the above-mentioned reaction generated gas is cut to form micro-bubbles to dissolve in the washing liquid, and then the water vapor of the washing liquid raised by the micro-bubbles overflows into the outer tank.

Wherein, the plasma processing device is a radio frequency plasma generation source, a microwave plasma generation source or a high voltage discharge source.

Wherein, the plasma processing device is a microwave plasma generating source with a coaxial microwave resonant cavity.

Wherein, the microwave plasma generating source includes a microwave source and a metal coupling antenna coaxially arranged, a ceramic tube and a hollow cylinder, wherein the ceramic tube is located at the center of the cylinder and the metal coupling antenna is located at the center of the ceramic tube, the microwave source is arranged on the ceramic tube and Located on one side of the metal-coupled antenna.

Among them, the power of the microwave plasma generation source is between 1,000W and 5,000W.

Wherein, the process exhaust gas source is a semiconductor process chamber or a turbo vacuum pump connected to the semiconductor process chamber to discharge the process exhaust gas.

Based on the above, the semiconductor waste gas treatment system of the present invention adopts a low pressure (low pressure) plasma treatment device, which has the following advantages:

(1) The vacuum exhaust device can generate the first low-pressure environment to extract the process exhaust gas generated by the process exhaust gas source. The vacuum exhaust device can form a second low-pressure environment between the first pump and the second pump, and the plasma treatment The device can simultaneously use the second low-pressure environment to perform low-pressure plasma treatment on process waste gas. In addition, the plasma treatment device can be switched from the standby state to the running state only when the process exhaust gas starts to be discharged, so as to save energy.

(2) The exhaust gas scrubber is a jet-type micro-bubble wet exhaust gas scrubber. When the scrubbing liquid is sprayed at high speed, the reaction gas obtained after low-pressure plasma treatment can be converted into micro-bubbles, which greatly increases the contact area and contact time. , helps to dissolve the above-mentioned reaction gas and capture particles, and can simultaneously generate a rough vacuum (rough vacuum) state between about 400torr and 600torr at the air inlet, so that the vacuum pumping device connected to it can effectively Inhaling the gas and particles generated by the above reaction for washing can also avoid the clogging of the vacuum pumping device, improve the operating efficiency of the vacuum pumping device and reduce the required power.

(3) By setting up the plasma treatment device to treat the process exhaust gas before the harmful process exhaust gas enters the second pump (dry pump), it can greatly reduce the introduction of nitrogen gas to dilute the toxic gas or even eliminate the need to introduce nitrogen gas, so it can reduce nitrogen The production of oxides and carbon monoxide avoids secondary pollution, and can reduce the required operating specifications, such as suction power and flow rate.

(4) By introducing corresponding reaction gases, such as oxygen and water vapor, stable precursors, such as oxides, can be formed, which can effectively make the more difficult-to-handle process waste gas form easier-to-handle reaction gas, and miniaturize the particles , and even eliminate particles, thereby reducing toxic gases and greenhouse gases.

(5) The plasma treatment device is installed after the first pump of the vacuum exhaust device, which can effectively prevent the reaction gas and particles obtained after the low-pressure plasma treatment from flowing back into the process exhaust gas source, and the second pump and The exhaust gas cleaning treatment device can also provide negative pressure suction, which is more conducive to the return of the above-mentioned reaction gas and particles to the exhaust gas source of the process and can prevent clogging.

(6) The plasma treatment device can effectively decompose the chemical bond of the precursor before the atomic layer deposition (ALD) process, and can make the above-mentioned reaction gas into the gas phase to reduce the possibility of particle generation, so it can effectively extend the maintenance cycle.

(7) The plasma treatment device can use the structure of the coaxial microwave resonant cavity, which has the advantage of prolonging the reaction length of the microwave and the plasma to achieve the goal of uniform distribution of the plasma. The power used is, for example, between 1,000W and 5,000W, depending on the type and flow of waste gas to be treated.

Herein, in order to make Jun Shen have a further understanding and understanding of the technical characteristics of the present invention and the technical effects that can be achieved, the preferred embodiment and detailed description are as follows.

In order to facilitate the understanding of the technical features, content and advantages of this creation and the effects it can achieve, this creation is hereby combined with the drawings and described in detail in the form of embodiments as follows, and the ideas used in it are only for the purpose of For the purpose of illustration and auxiliary instructions, it may not be the true proportion and precise configuration of this creation after its implementation. Therefore, the scale and configuration relationship of the attached drawings should not be interpreted or limited to the scope of rights of this creation in actual implementation. In addition, for ease of understanding, the same elements in the following embodiments are described with the same symbols.

In addition, the terms used in the entire specification and patent claims generally have the ordinary meanings of each term used in this field, in the disclosed content and in the special content, unless otherwise specified. Certain terms used to describe the invention are discussed below or elsewhere in this specification to provide those skilled in the art with additional guidance in describing the invention.

Regarding the use of "first", "second", "third", etc. in this article, it does not specifically refer to the meaning of order or order, nor is it used to limit the creation, it is just to distinguish components described with the same technical terms or operation only.

Secondly, if the words "comprising", "including", "having", "containing" etc. are used in this article, they are all open terms, meaning including but not limited to.

Please refer to Fig. 1 to Fig. 5, Fig. 1 is a schematic diagram of the semiconductor waste gas treatment system of the present invention, Fig. 2 is a schematic diagram of the semiconductor waste gas treatment system of the present invention applied to process waste gas, and Fig. 3 is a schematic diagram of the waste gas cleaning treatment device of the present invention Schematic diagram of jet-type microbubble wet exhaust gas scrubber, Figure 4 is a schematic diagram of the microwave plasma generation source of the present invention, and Figure 5 is a schematic diagram of the application of the semiconductor waste gas treatment concept of the present invention to the existing waste gas treatment system.

As shown in FIGS. 1 to 3 , the semiconductor waste gas treatment system 10 of the present invention is composed of a vacuum pumping device 30 , a plasma treatment device 40 and a waste gas cleaning treatment device 50 . When applied to process exhaust gas, the present invention uses a vacuum exhaust device 30 to connect the exhaust end of the process exhaust gas source 20, and the vacuum exhaust device 30 can be placed between the process exhaust gas source 20 and the vacuum exhaust device 30 during operation. The first low-pressure environment is generated, and the process exhaust gas 12 generated by the process exhaust gas source 20 can be sucked by generating a negative pressure. The plasma treatment device 40 is located on the vacuum pump 30 (between the first pump 32 and the second pump 34), and by the second pump between the first pump 32 and the second pump 34 The low-pressure environment performs low-pressure plasma treatment on the process exhaust gas, so that the process exhaust gas 12 that is originally difficult to handle becomes an easier-to-handle reaction gas 16, so that it is easier to dissolve in the cleaning solution, and the process exhaust gas 12 is carried by miniaturization Particulates, or even eliminate them, to prevent clogging and are easier to trap. Therefore, the present invention can greatly reduce or eliminate the need to dilute the process exhaust gas. Since the gas flow rate becomes lower, the operating specifications of the vacuum pumping device 30, such as pumping power and/or pumping rate, can be greatly reduced. At the same time, the first pump 32 of the vacuum suction device establishes the isolation between the plasma treatment device 40 and the process exhaust gas source 20, so that the reaction product gas 16 or particles obtained after the low-pressure plasma treatment cannot flow back to the process exhaust gas source 20 to cause pollution. The waste gas cleaning treatment device 50 can generate a third low-pressure environment (between the second pump 34 and the waste gas cleaning treatment device 50 ) during operation, and the reaction product gas obtained after the low-pressure plasma treatment can be effectively sucked by generating negative pressure 16, to prevent clogging and backflow, and the reaction gas 16 can be converted into microbubbles by the washing liquid. By greatly increasing the contact area and contact time, the washing liquid can fully dissolve the reaction gas 16 and the particles it carries .

In detail, the above-mentioned process exhaust gas source 20 is, for example, a semiconductor process chamber used for semiconductor manufacturing process, and the process exhaust gas 12 is, for example, the exhaust gas discharged from the above-mentioned semiconductor manufacturing process, such as toxic exhaust gas or greenhouse gas, etc. The present invention is not limited to a specific semiconductor process chamber and the type of semiconductor process it implements, as long as the process exhaust gas 12 is generated, the semiconductor waste gas treatment system 10 of the present invention can be used for waste gas treatment. For example, depending on the actual semiconductor manufacturing process, the process exhaust gas source 20 of the present invention can be not only a semiconductor process chamber, but also a semiconductor process chamber equipped with a turbo pump (Turbo Pump) to discharge process exhaust gas. Process system. In other words, the process waste gas source 20 applicable to the semiconductor waste gas treatment system 10 of the present invention is not limited to the above examples, and any waste gas source that emits semiconductor process waste gas can be applied to the present invention. Wherein, the process exhaust gas 12 is the process exhaust gas generated in the semiconductor manufacturing process, such as, but not limited to, perfluorocarbons (PFCs), nitrogen oxides (NOx), sulfur hexafluoride (SF ₆ ), nitrogen trifluoride ( NF ₃ ), ammonia (NH ₃ ), boroethane (B ₂ H ₆ ), hydrofluorocarbons (HFCs) and/or hydrocarbons (C _x H _y ) and other toxic or greenhouse gases. If the above-mentioned semiconductor process is an atomic layer deposition (Atomic layer deposition, ALD) process, the process exhaust gas is, for example, but not limited to, trimethylaluminum (TMA), tetrakis (ethylmethylamino) zirconium (TEMAZ) and/or Or tetrakis(ethylmethylamino)hafnium (TEMAH).

Specifically, the vacuum pumping device 30 of the semiconductor waste gas treatment system 10 of the present invention includes, for example, a two-stage combination of a first pump 32 and a second pump 34 that are connected. The intake end 32a of the first pump 32 is connected to the exhaust end of the process exhaust gas source 20 through the first pipe a1, and a first low pressure is generated in the first pipe a1 (that is, between the first pump 32 and the process exhaust gas source 20) The environment is used to extract the process exhaust gas 12 generated by the process exhaust gas source 20 . The exhaust end 32b of the first pump 32 communicates with the mixer 60 , the plasma processing device 40 and the intake end 34a of the second pump 34 through the second pipe a2. The second pump 34 of the vacuum pump 30 establishes a second low pressure environment between the first pump 32 and the second pump 34 . Wherein, the air pressure of the first low-pressure environment generated by the first pump 32 is, for example, about 100 torr to 10 ^-3 torr, and the air pressure of the second low-pressure environment generated by the second pump 34 is, for example, about 100 torr to 10 ^-3 torr. For example, the working pressure range of the first pump 32 is, for example, about 100 torr to 10 ⁻³ torr, and the working pressure range of the second pump 34 is, for example, about 100 torr to 10 ⁻³ torr. The first pump 32 is, for example, a booster pump, and the second pump 34 is, for example, a dry pump. In addition to using the first pump 32, the vacuum pumping device 30 of the present invention also adds a second pump 34, thereby providing auxiliary suction and helping to accelerate the required vacuum level. 32 simultaneously isolates the gas and particles in the second pipe a2 from flowing back to the process exhaust gas source 20 . Although the air pressure ranges of the first low-pressure environment and the second low-pressure environment of the vacuum pumping device 30 and the working pressure ranges of the first pump 32 and the second pump 34 are listed above, the scope of the present invention is not limited thereto. Pu can provide a low-pressure environment, which falls within the scope of protection claimed by the present invention.

In other words, the plasma treatment device 40 of the semiconductor waste gas treatment system 10 of the present invention is installed between the first pump 32 and the second pump 34 of the vacuum pumping device 30, so that when the process waste gas enters the second pump 34 Previously, the plasma treatment device 40 used the second low-pressure environment generated by the second pump 34 to perform low-pressure plasma treatment on the difficult-to-treat process waste gas, so as to convert the process waste gas into a more easily-handled reaction product gas 16 and It can miniaturize the particles carried by the process waste gas, so the present invention can greatly reduce the purge gas (such as nitrogen) required by the second pump 34 to dilute the process waste gas, and greatly reduce the power required for pumping; at the same time, it can also prevent Micro-blockage of vacuum suction unit. Moreover, the vacuum exhaust device 30 establishes isolation between the plasma treatment device 40 and the process exhaust gas source 20 , so that the reaction gas 16 or particles cannot flow back to the process exhaust gas source 20 to cause pollution.

In addition, the plasma processing device 40 of the present invention can selectively switch between a standby state and an operating state according to the control signal 80 . For example, when the process exhaust gas source 20 starts to discharge the process exhaust gas 12, the plasma treatment device 40 is switched from the standby state to the operating state so as to perform low-pressure plasma treatment on the process exhaust gas 12 in the second low pressure environment; when the process exhaust gas source 20 When the emission of process exhaust gas 12 is stopped, the plasma treatment device 40 is switched from the operating state to the standby state, which does not need to be kept running at any time, thus saving the required energy.

Specifically, the plasma processing device 40 of the present invention provides a plasma channel 42 connected to the exhaust end 32b of the first pump 32 of the vacuum pumping device 30 and the intake end of the second pump 34 34a, for example, is detachably or fixedly arranged on the second pipe member a2. Wherein, the process exhaust gas 12 is, for example, firstly mixed with at least one reaction gas 14 corresponding to the process exhaust gas 12, and then passes through the plasma channel 42, so that the process exhaust gas 12 and the reaction gas 14 utilize the plasma in the plasma channel 42 to react, In order to convert the process exhaust gas 12 into at least one reaction product gas 16, and miniaturize the particles carried by the process exhaust gas 12, and even completely remove the particles. The type of reactive gas 14 corresponds to the above-mentioned process exhaust gas 12, that is, the type of reactive gas 14 is determined by the process exhaust gas 12, so that the process exhaust gas 12 and the reactive gas 14 react with plasma to form a predetermined reaction gas 16. The above-mentioned reactive gas 14 is, for example, oxygen (O ₂ ), helium (He), argon (Ar), nitrogen (N ₂ ), hydrogen (H ₂ ) and/or water (H ₂ O) and the like. The reaction gas 16 obtained after the low-pressure plasma treatment is a harmless, stable or water-soluble gas that is easier to handle. For example, the treatment efficiency (Destruction Removal Efficiency, DRE) can exceed 90% when the mixed gas of CH ₄ and CHF ₃ is treated with water gas. For example, NF ₃ is treated by mixing water and air. The water gas is dissociated into active particles of O, H, and OH by electrons in the plasma, and they can react with the NF _x particles of NF ₃ dissociated by the plasma. For example: OH + NF ₂ → NOF + HF, H + NF → N + HF, H + F → HF. However, HF can be effectively treated by wet scrubbing. Taking the radio frequency plasma generation source as an example, the electrode structure of the plasma processing device 40 can be, for example, columnar, plate-shaped, or mesh-shaped, as long as the plasma channel 42 with plasma can be formed, it can be applied to the present invention.

In addition, the present invention can selectively introduce the above-mentioned reaction gas 14 through the mixer 60 according to the control signal 80 at the same time, that is, when the process exhaust gas source 20 starts to discharge the process exhaust gas 12, the reaction gas 14 is introduced, and the plasma treatment The plasma channel 42 of the device 40 is connected to the mixer 60 , and the process exhaust gas 12 is firstly mixed with the reaction gas 14 by the mixer 60 and then enters the plasma channel 42 for reaction. The mixer 60 is, for example, arranged on the second pipe a2 and in front of the inlet end 42 a of the plasma channel 42 of the plasma processing device 40 . That is, the mixer 60, for example, has a first inlet port 60a, a second inlet port 60c and an exhaust port 60b connected to the mixing chamber 61, wherein the first inlet port 60a of the mixer 60 is connected to the first pump 32. The exhaust end 32b is used to introduce the process exhaust gas 12, and the exhaust end 60b of the mixer 60 is connected to the intake end 42a of the plasma channel 42 of the plasma processing device 40, and is used to export the mixed process exhaust gas 12 and reaction gas 14 . Wherein, the mixer 60 has, for example, a fourth pipe a4, and one end of the fourth pipe a4 communicates with the mixing chamber 61 of the mixer 60, and the other end of the fourth pipe a4 has a second inlet port 60c for introducing the reaction gas 14 , so that the process exhaust gas 12 can be uniformly mixed with the reaction gas 14 in the mixing chamber 61 . Wherein, the form and size of the mixer 60 and its mixing chamber 61 are not particularly limited, as long as the process waste gas 12 can be mixed with the reaction gas 14 , it can be applied to the present invention. In addition, the mixer 60 used in the present invention may also have regulating valves (not shown) provided at the first inlet port 60a and the second inlet port 60c, for example, to adjust the corresponding supply of the process exhaust gas 12 and the reaction gas 14 amount for better response. In other words, the present invention can integrate the control signal 80 to ensure that the operation mode of igniting the plasma and inputting the mixed reaction gas is used to save energy and increase the service life of the plasma system when there is process waste gas to be treated.

Taking the plasma processing device 40 as the source of microwave plasma generation, the microwave plasma processing device shown in FIG. Entering the cylindrical microwave resonant cavity through pipeline 1 and pipeline 2, high-power microwaves (about 1,000 W to about 5,000 W) dissociate the mixed gas into a plasma state in the plasma channel 42 . Under low pressure, electrons can obtain enough energy to collide with gas molecules for dissociation reactions, and at the same time, the molecules, atoms and activated particles produced also produce various chemical and physical reactions, thereby achieving the goal of waste gas treatment. The reaction gas 16 obtained after the low-pressure plasma treatment enters the second pump 34 through the pipeline 3 and the pipeline 4 . In detail, the cylindrical microwave resonant cavity of the microwave plasma generation source includes a coaxial metal coupling antenna 6, a ceramic tube 7 and a cylinder 8, wherein the ceramic tube 7 is located at the center of the hollow cylinder 8 and the antenna 6 is located at the center of the ceramic tube 7. In the center, the microwave source 5 is arranged on the ceramic tube 7 and located on one side of the antenna 6 .

The above-mentioned microwave plasma processing device uses a coaxial microwave resonant cavity structure, which has the advantage of prolonging the reaction length of microwave and plasma to achieve the goal of uniform distribution of plasma. In general, the plasma of a cylindrical or rectangular microwave resonator tends to concentrate near the entrance, which cannot effectively form a uniform plasma. Coaxial microwave distribution is achieved by microwave source 5 via metal coupled antenna 6 and ceramic tube 7 and outer cylinder 8 . The ceramic tube 7 can effectively transmit microwaves on the antenna 6 without causing the microwave source coupling plasma reaction to concentrate near the entrance, and also achieve the functions of isolating the vacuum and protecting the antenna 6 from being damaged by the plasma. However, the type of the plasma processing device 40 of the present invention is not limited to the above-mentioned microwave plasma generation source, and any existing technology such as a radio frequency plasma generation source or a high-voltage discharge source can be used, as long as the plasma channel 42 can be formed in a low-pressure environment And making the process waste gas 12 react with the reaction gas 14 is applicable to the present invention.

The waste gas cleaning treatment device 50 of the semiconductor waste gas treatment system 10 of the present invention uses the Venturi throat principle to make the jet structure eject the cleaning liquid 59 to generate the above-mentioned waste gas between the second pump 34 and the waste gas cleaning treatment device 50. The third low-pressure environment is to inhale the reaction gas 16 obtained after the low-pressure plasma treatment, and convert the reaction gas 16 into microbubbles. By greatly increasing the contact area and contact time, the washing liquid can be fully dissolved and reacted Generate gas 16 and capture particles, so the present invention can prevent the clogging of the vacuum pumping device, effectively prolong the maintenance cycle, and prevent backflow pollution, so it can save energy, protect the environment and treat process waste gas stably. Specifically, as shown in FIG. 3 , the exhaust gas scrubber 50 used in the present invention is an example of a jet-type microbubble wet exhaust scrubber using the principle of a Venturi tube. Wherein, the exhaust gas washing treatment device 50 uses the negative pressure jet pipe 51 to spray the washing liquid 59 longitudinally at high speed and generates a third low pressure environment (a negative pressure of about 400 torr to 600 torr), so that the second pump 34 can be passed through the third pipe a3 The converted reaction product gas 16 is sucked into the process exhaust gas 12 . The volume of the cleaning solution 59 accounts for, for example, about 50% to 90% of the volume of the tank 53 in the treatment tank, preferably about 60% to 80%, more preferably about 70%. And when cleaning liquid 59 is by the cleaning liquid 59 in the groove 53 in the inner groove of processing tank of impact downwards at high speed by negative pressure jet pipe 51, reaction generation gas 16 will be cut and form a plurality of microbubbles (average) in cleaning liquid 59 diameter is less than about 1.0 mm), its size is much smaller than traditional bubbles, so the surface area is much larger than traditional bubbles, and in the process of microbubbles moving upward from the depth of washing liquid 59 in tank 53 in the treatment tank, due to the contact area and contact The time is greatly increased, so that the microbubbles can fully contact the washing liquid 59 . Because the gas 16 generated by the reaction will be dissolved in the washing liquid 59 , the microbubbles will gradually shrink in volume during the rising process, and then disappear in the washing liquid 59 . The water vapor of the washing solution 59 raised by the microbubbles will overflow into the outer tank 54 . The scrubbing solution 59 contains chemicals for treating the corresponding reaction gas 16 . The chemical is, for example but not limited to, selected from the group consisting of saline solution, sodium hydroxide, calcium hydroxide, calcium carbonate, and sodium bicarbonate. That is, the composition of the scrubbing liquid 59 can be determined by the reaction product gas 16 to be treated, and a suitable base can be used for neutralization to reduce the formation of an acidic solution, such as fresh water and sodium hydroxide or other neutralizing agents (such as lime) The resulting solution can effectively extract and neutralize large amounts of HCl, SO ₂ or other acid-containing components in the reaction gas 16 . Calcium hydroxide (Ca(OH) ₂ ), calcium carbonate (CaCO ₃ ) and/or sodium bicarbonate (NaHCO ₃ ), for example, may also be mixed with scrubber 59 to help absorb other acidic process off-gases from various production sources. Therefore, when the microbubbles contact the washing liquid 59 , the reaction gas 16 can be fully dissolved in the washing liquid 59 , and the washing liquid 59 can sufficiently capture the microparticles.

Subsequently, the washed gas that is not dissolved by the washing liquid 59 diffuses to the liquid surface of the inner tank 53 along with the washing liquid 59 to form water vapor, so the gas-liquid separation component 56 above the inner tank 53 can act as a filter and capture water vapor and only allows the above-mentioned scrubbed gas to pass through the gas-liquid separation unit 56, so the processed dry scrubbed gas can be discharged from the discharge channel 57, for example, to the central exhaust gas treatment system. In addition, the above-mentioned gas-liquid separation component can also be added in the discharge channel 57 to discharge drier washed gas by capturing moisture. The above-mentioned gas-liquid separation component 56 can be any structure capable of separating liquid and gas, such as a fiber bed demister made of glass fibers with a diameter of about 100 microns to 1 micron, so as to filter water vapor and only allow gas to pass through it . As for, the washing liquid 59 blocked by the gas-liquid separation assembly 56 will drop into the outer tank 54 . Subsequently, can for example utilize filtering assembly 55 to filter the washing solution 59 in the tank 54 outside the treatment tank, and then utilize the water pump 58 to filter the washing solution 59 in the outer tank 54, and inject the inner tank of the treatment tank through the negative pressure jet pipe 51 again 53 , a plurality of microbubbles are formed in the cleaning solution 59 by cyclically generating negative pressure and cutting the reaction gas 16 .

The above-mentioned negative pressure jet tube 51 has, for example, a suction chamber 72 and an injection pipe 74. The side wall of the suction chamber 72 has at least one suction port for communicating with the third pipe member a3 via the gas pipeline 52. The top of the injection pipe 74 is an inlet for injection. To inject the washing liquid 59, the bottom end of the injection pipe 74 is the outlet and extends to the inside of the suction chamber 72, and the washing liquid 59 is sprayed into the suction chamber 72 to generate negative pressure suction. The gas pipeline 52 can be installed on the side wall of the suction chamber 72 vertically or inclined, for example, and the gas pipeline 52 is preferably installed on the side wall of the suction chamber 72 obliquely. Wherein, the bottom of suction cavity 72 is connected with mixing pipe 76 and diffusion pipe 78 in sequence, and mixing pipe 76 and/or diffusion pipe 78 are immersed in the cleaning liquid 59 of inner tank 53, preferably can make microbubble pass through The momentum of the downward jet impact reaches the bottom of the inner tank 53, and then moves upwards from the bottom to increase the time for the microbubbles to contact the washing liquid 59. The time for the microbubbles to pass through the washing liquid 59 is, for example, about 1 to 20 seconds, which is relatively short. Preferably about 1 to 10 seconds. In addition, the cavity wall of the suction cavity 72 and/or the gas pipeline 52 can optionally have a cleaning member, such as a nozzle, for example, after spraying the cleaning liquid 59 first, and then spraying air, so as to clean the inside of the cavity wall. Efficacy, and can keep the chamber wall of suction chamber 72 and/or gas pipeline 52 dry. In addition, the cleaning element is preferably sprayed into the suction chamber 72 and/or the gas pipeline 52 at a high speed along the tangential direction of the cavity wall of the suction chamber 72 and/or the gas pipeline 52 and slightly inclined. In order to generate a spiral air flow flowing along the suction chamber 72 and/or the gas pipeline 52 from top to bottom, it is possible to effectively prevent the generation of deposits.

Since the process waste gas generated by the semiconductor process will carry a large amount of particles, in order to avoid clogging, such as the clogging of the vacuum pumping device, the traditional technology must use a large amount of purge gas (such as nitrogen) to dilute the pumping gas (ie process waste gas). Therefore, it is necessary to use an air extraction pump with a higher operating specification for air extraction, which will increase operating costs and consume energy virtually. Compared with the traditional technology, the present invention can greatly reduce or eliminate the need to dilute the process exhaust gas, and can also greatly reduce the required operating specifications, such as pumping power or pumping rate. In the present invention, before the process waste gas enters the second pump 34, the process waste gas 12 is pre-treated by the plasma treatment device 40, which can effectively decompose the chemical bonds of the precursors to reduce the possibility of generating particles, and make the reaction product gas 16 into gas. Mutually. In other words, the present invention not only converts the process exhaust gas 12 into a harmless, stable or easily soluble reaction gas 16 in the cleaning solution, but also reduces the size of the solid particles so that they can be easily captured by the cleaning solution, and even completely remove the particles. Therefore, the present invention is not prone to clogging. It can be seen that the present invention can adopt lower pumping power, and can prolong the maintenance cycle, and prevent secondary pollution of the environment, and the semiconductor waste gas treatment system of the present invention performs plasma treatment under low pressure conditions, and the components are damaged The rate is lower and more stable. Therefore, the present invention can achieve the effects of energy saving, environmental protection and stable treatment of process waste gas.

In addition, the exhaust gas washing treatment device 50 of the present invention can not only process the reaction gas 16, but also generate a third low-pressure environment, which can provide negative pressure suction, reduce the power required for the operation of the vacuum pumping device 30, and avoid The vacuum suction device 30 is blocked. In detail, the intake port 50a of the exhaust gas washing treatment device 50 is connected to the exhaust port 34b of the second pump 34 of the vacuum pumping device 30 to inhale the reaction gas 16 through the third pipe a3. Wherein, the exhaust gas scrubbing device 50 is, for example, a wet exhaust gas scrubbing processor and/or a dry exhaust gas scrubbing processor. The exhaust gas cleaning treatment device 50 of the present invention is preferably a wet exhaust gas scrubber that can provide negative pressure suction, and is more preferably a jet-type microbubble wet exhaust gas scrubber, which can generate a rough vacuum state (about 400 torr-600 torr ) of the third low pressure environment. Since the exhaust gas cleaning treatment device 50 is connected to the second pump 34, the negative pressure suction generated by the exhaust gas cleaning treatment device 50 between the second pump 34 and the exhaust gas cleaning treatment device 50 can provide auxiliary suction, which is helpful for the reaction to generate The gas 16 is discharged into the exhaust gas scrubbing device 50 via the second pump 34 . In other words, with the negative pressure suction generated by the exhaust gas cleaning treatment device 50, the present invention can prevent the reaction product gas 16 and particles obtained after the low-pressure plasma treatment from backflowing, and can prevent the second pump 34 from clogging. And reduce the power required for the operation of the vacuum pumping device 30 .

In addition, according to the semiconductor waste gas treatment concept of the present invention, as shown in Figure 5, the present invention can be applied to modify the existing waste gas treatment system, for example, the vacuum pump installed in the existing semiconductor can be refitted, and the booster pump can be separated. Pu (i.e. the first pump 32) and a dry pump (i.e. the second pump 34), adding a gas mixer (i.e. the mixer 60) and a plasma treatment device 40, and adding a jet microbubble wet exhaust gas scrubber at the same time The local exhaust gas treatment system replaces the existing electrothermal or combustion local exhaust gas treatment system.

In summary, the semiconductor waste gas treatment system of the present invention adopts low pressure (low pressure) plasma treatment device, which has the following advantages:

(1) The vacuum exhaust device can generate a first low-pressure environment to extract the process exhaust gas generated by the process exhaust gas source. The vacuum exhaust device can form a second low-pressure environment between the first pump and the second pump, and the plasma The treatment device can simultaneously use the second low-pressure environment to perform low-pressure plasma treatment on the process waste gas. In addition, the plasma treatment device can be switched from the standby state to the running state when the process exhaust gas starts to be discharged, so as to save energy.

(2) The exhaust gas scrubber is a jet-type micro-bubble wet exhaust gas scrubber. When the scrubbing liquid is sprayed at high speed, the reaction gas obtained after low-pressure plasma treatment can be converted into micro-bubbles, which greatly increases the contact area and contact time. , helps to dissolve the above-mentioned reaction-generated gas and capture particles, and can generate a rough vacuum state between about 400torr and 600torr at the air inlet at the same time, so as to inhale the above-mentioned reaction-generated gas and particles for cleaning, and can also avoid vacuum The suction device is blocked, which improves the operating efficiency of the vacuum suction device and reduces the required power.

(3) By setting up the plasma treatment device to treat the process exhaust gas before the harmful process exhaust gas enters the second pump (dry pump), it can greatly reduce the introduction of nitrogen gas to dilute the toxic gas or even eliminate the need to introduce nitrogen gas, so it can reduce nitrogen The production of oxides and carbon monoxide avoids secondary pollution, and can reduce the required operating specifications, such as suction power and flow rate.

(4) By introducing corresponding reactive gases, such as oxygen and water vapor, stable precursors, such as oxides, can be formed, which can effectively make difficult-to-treat process waste gases form easier-to-handle reaction gases, and miniaturize particles, Even eliminates particulates to reduce toxic and greenhouse gases.

(5) The plasma treatment device is installed after the first pump of the vacuum exhaust device, which can effectively prevent the reaction gas and particles obtained after plasma treatment from flowing back into the process exhaust gas source, and the second pump and exhaust gas cleaning The treatment device can also provide negative pressure suction, which is more helpful to prevent the reaction gas and particles from flowing back into the process exhaust gas source and prevent clogging.

(6) The plasma treatment device can effectively decompose the chemical bond of the precursor before the atomic layer deposition (ALD) process, and can make the reaction gas into the gas phase to reduce the possibility of particle generation, so the maintenance cycle can be effectively extended.

(7) The plasma treatment device can use the structure of the coaxial microwave resonant cavity, which has the advantage of prolonging the reaction length of the microwave and the plasma to achieve the goal of uniform distribution of the plasma. The power used is, for example, between 1,000W and 5,000W, depending on the type and flow of waste gas to be treated.

The above descriptions are illustrative only, not restrictive. Any equivalent modification or change made without departing from the spirit and scope of the present invention shall be included in the scope of the appended patent application.

Fig. 1 is a schematic diagram of the semiconductor waste gas treatment system of the present invention.

Fig. 2 is a schematic diagram of the application of the semiconductor waste gas treatment system of the present invention to process process waste gas.

Fig. 3 is a schematic diagram of a jet-type microbubble wet exhaust gas scrubber used in the exhaust gas scrubbing treatment device of the present invention.

Fig. 4 is a schematic diagram of a microwave plasma generating source used in the plasma treatment device of the present invention, wherein Fig. 4(B) is a schematic diagram obtained along the I-I' section line of Fig. 4(A).

Fig. 5 is a schematic diagram of the application of the semiconductor waste gas treatment concept of the present invention to retrofit the existing waste gas treatment system.

10: Semiconductor waste gas treatment system

12: Process waste gas

14: Reactive gas

16: Reaction generates gas

30: Vacuum pumping device

32: The first pump

32a: Intake end

32b: Exhaust port

34:Second pump

34a: Intake end

34b: Exhaust port

40: Plasma treatment device

42a: Intake end

42: Plasma channel

50: Exhaust gas washing treatment device

50a: Intake end

60: Mixer

60a: the first air intake port

60b: Exhaust port

60c: Second intake port

61: Mixing cavity

a1: the first fitting

a2: the second pipe

a3: The third pipe fitting

a4: The fourth pipe fitting

80: Control signal

Claims (17)

A semiconductor waste gas treatment system, suitable for treating at least one process waste gas produced by a process waste gas source, characterized in that: The semiconductor waste gas treatment system is composed of a vacuum pumping device, a plasma treatment device and a waste gas washing treatment device; Wherein, the vacuum extraction device adopts a two-stage combination of a first pump and a second pump, and the first pump generates a first low-pressure environment for extracting the process exhaust gas generated by the process exhaust gas source, the second pump generates a second low pressure environment between the first pump and the second pump; Wherein, the plasma treatment device is arranged between the first pump and the second pump, so that the process exhaust gas enters the second pump, and the plasma treatment device is first in the second low-pressure environment. subjecting the process exhaust gas to a low-pressure plasma treatment to convert the process exhaust gas into a reactive gas and to miniaturize or remove particles entrained in the process exhaust gas; and Wherein, the exhaust gas cleaning treatment device generates a third low-pressure environment between the second pump and the exhaust gas cleaning treatment device by spraying a cleaning liquid through a negative pressure jet tube, and the negative pressure jet tube passes through the second pump The reaction-generated gas and the particles obtained after the low-pressure plasma treatment are sucked in, and the reaction-generated gas is cut into a plurality of microbubbles by the ejected washing liquid, so that the washing liquid fully dissolves the reaction-generated gas and The particulates carried by the reaction-generated gas are captured, wherein the pressure of the third low-pressure environment generated by the waste gas washing treatment device is 400 torr to 600 torr. The semiconductor waste gas treatment system as described in Claim 1, wherein the first pump of the vacuum pumping device is installed between the process waste gas source and the plasma treatment device, so as to isolate the low pressure by using the first pump The reaction-generated gas obtained after plasma treatment and the particles carried by it are prevented from backflowing and polluting the process exhaust gas source. The semiconductor waste gas treatment system as described in claim 1, wherein the plasma treatment device is switched between a standby state and an operating state according to a control signal, and when the process waste gas source starts to discharge the process waste gas, the plasma The processing device is switched from the standby state to the operating state so as to perform the low-pressure plasma treatment on the process exhaust gas in the second low-pressure environment. When the process exhaust gas source stops discharging the process exhaust gas, the plasma treatment device is Switch from the operating state to the standby state. The semiconductor waste gas treatment system as described in claim 3, wherein when the plasma treatment device performs the low-pressure plasma treatment on the process waste gas, it first mixes the process waste gas with a reaction gas according to the control signal. The semiconductor waste gas treatment system as described in claim 4, wherein the plasma treatment device uses a mixer to introduce the reaction gas, so that the reaction gas mixes with the process waste gas. The semiconductor waste gas treatment system as described in claim 1, wherein the process waste gas is perfluorocarbons (PFCs), nitrogen oxides (NOx), sulfur hexafluoride (SF ₆ ), nitrogen trifluoride (NF ₃ ), Ammonia (NH ₃ ), boroethane (B ₂ H ₆ ), hydrofluorocarbons (HFCs), hydrocarbons (C _x H _y ) and/or CCl ₄ . The semiconductor exhaust gas treatment system as described in claim 1, wherein if the process exhaust gas source is subjected to an atomic layer deposition (ALD) process, the process exhaust gas is trimethylaluminum (TMA), tetrakis (ethylmethylamino) zirconium (TEMAZ) and/or tetrakis(ethylmethylamino)hafnium (TEMAH). The semiconductor waste gas treatment system as described in claim 6 or 7, wherein the reaction gas is oxygen (O ₂ ), helium (He), argon (Ar), nitrogen (N ₂ ), hydrogen (H ₂ ) and/or Or water vapor (H ₂ O). The semiconductor exhaust gas treatment system according to Claim 1, wherein the first pump is a booster pump, and the second pump is a dry pump. The semiconductor waste gas treatment system according to claim 1, wherein the pressure of the first low-pressure environment generated by the first pump of the vacuum pumping device is 100 torr to 10 ^-3 torr. The semiconductor waste gas treatment system according to claim 1, wherein the pressure of the second low-pressure environment generated by the second pump of the vacuum pumping device is 100 torr to 10 ^-3 torr. The semiconductor exhaust gas treatment system as described in claim 1, wherein the exhaust gas washing treatment device includes: a treatment tank, comprising an inner tank and an outer tank, for containing the washing liquid; and The negative pressure jet tube, wherein the cleaning solution is sprayed into the inner tank of the treatment tank through the negative pressure jet tube, so as to cut the reaction gas to form the micro bubbles to dissolve in the cleaning solution, and then make the The water vapor of the cleaning solution raised by the slight air bubbles overflows into the outer tank. The semiconductor waste gas treatment system as described in claim 1, wherein the plasma treatment device is a radio frequency plasma generation source, a microwave plasma generation source or a high voltage discharge source. The semiconductor waste gas treatment system as described in claim 1, wherein the plasma treatment device is a microwave plasma generation source with a coaxial microwave resonant cavity. The semiconductor exhaust gas treatment system as described in Claim 14, wherein the microwave plasma generation source includes a microwave source and a metal coupling antenna coaxially arranged, a ceramic tube and a hollow cylinder, wherein the ceramic tube is located at the center of the cylinder And the metal coupled antenna is located at the center of the ceramic tube, and the microwave source is arranged on the ceramic tube and located at one side of the metal coupled antenna. The semiconductor waste gas treatment system as described in Claim 14, wherein the power of the microwave plasma generation source is between 1,000W and 5,000W. The semiconductor waste gas treatment system according to claim 1, wherein the process waste gas source is a semiconductor process chamber or a turbo vacuum pump connected to the semiconductor process chamber to discharge the process waste gas.

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