TW202302791A - Integrated dicing/die bonding film and method for producing semiconductor device - Google Patents

Integrated dicing/die bonding film and method for producing semiconductor device Download PDF

Info

Publication number
TW202302791A
TW202302791A TW111120391A TW111120391A TW202302791A TW 202302791 A TW202302791 A TW 202302791A TW 111120391 A TW111120391 A TW 111120391A TW 111120391 A TW111120391 A TW 111120391A TW 202302791 A TW202302791 A TW 202302791A
Authority
TW
Taiwan
Prior art keywords
adhesive layer
meth
adhesive
wafer
aforementioned
Prior art date
Application number
TW111120391A
Other languages
Chinese (zh)
Inventor
木村尚弘
大久保惠介
菅原丈博
高橋義政
Original Assignee
日商昭和電工材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商昭和電工材料股份有限公司 filed Critical 日商昭和電工材料股份有限公司
Publication of TW202302791A publication Critical patent/TW202302791A/en

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00Adhesives based on unspecified macromolecular compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38Pressure-sensitive adhesives [PSA]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52Mounting semiconductor bodies in containers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)

Abstract

Disclosed is an integrated dicing/die bonding film which comprises a base layer, one or more pressure-sensitive adhesive layers including an ultraviolet-curable pressure-sensitive adhesive layer comprising an ultraviolet-curable pressure-sensitive adhesive, and an adhesive layer in this order. The ultraviolet-curable pressure-sensitive adhesive layer included in the pressure-sensitive adhesive layers is in contact with the adhesive layer. The ultraviolet-curable pressure-sensitive adhesive comprises a (meth)acrylic resin having a functional group capable of undergoing chain polymerization and photopolymerization initiators. The ultraviolet-curable pressure-sensitive adhesive contains at least a first photopolymerization initiator and a second photopolymerization initiator, which differs from the first photopolymerization initiator in maximum-absorption wavelength in the ultraviolet region, as the photopolymerization initiators. The content of the photopolymerization initiators is 1.5 parts by mass or higher per 100 parts by mass of the whole (meth)acrylic resin.

Description

切割晶粒接合一體型膜及半導體裝置的製造方法Dicing die bonding integrated film and method of manufacturing semiconductor device

本發明有關一種切割晶粒接合一體型膜及半導體裝置的製造方法。The present invention relates to a dicing die bonding integrated film and a method for manufacturing a semiconductor device.

半導體裝置藉由以下步驟來製造。首先,在晶圓上貼附切割用黏著膜之狀態實施切割步驟。其後,實施擴展步驟、拾取步驟、晶粒接合步驟等。A semiconductor device is manufactured through the following steps. First, a dicing step is performed with the adhesive film for dicing attached to the wafer. Thereafter, an expanding step, a pick-up step, a die bonding step, and the like are performed.

在半導體裝置的製造製程中,使用稱作切割晶粒接合一體型膜之膜。該膜具有依序積層了基材層、黏著劑層及接著劑層之結構,例如,以如下方式使用。首先,相對於晶圓貼附接著劑層側的面,並且在用切割環固定晶圓之狀態下切割晶圓。藉此,晶圓單片化為多個晶片。接著,藉由對黏著劑層照射紫外線而降低黏著劑層的相對於接著劑層的黏著力之後,將晶片與接著劑層單片化而成之接著劑片一併從黏著劑層上拾取。其後,藉由將晶片經由接著劑片而安裝於基板等之步驟來製造半導體裝置。另外,將由藉由切割步驟而獲得之晶片和附著於其上之接著劑片組成之積層體稱為附有接著劑片之晶片。In the manufacturing process of semiconductor devices, a film called a dicing die-bonding integrated film is used. This film has a structure in which a base material layer, an adhesive layer, and an adhesive layer are laminated in this order, and is used, for example, as follows. First, the surface on the adhesive layer side is attached to the wafer, and the wafer is diced while the wafer is fixed with a dicing ring. Thereby, the wafer is singulated into a plurality of wafers. Next, after reducing the adhesive force of the adhesive layer with respect to the adhesive layer by irradiating ultraviolet rays to the adhesive layer, the wafer and the adhesive sheet obtained by singulating the adhesive layer are picked up from the adhesive layer together. Thereafter, a semiconductor device is manufactured by a step of mounting the wafer on a substrate or the like via an adhesive sheet. Moreover, the laminated body which consists of the wafer obtained by the dicing process, and the adhesive sheet attached thereto is called the wafer with the adhesive sheet.

一直以來,作為晶圓及接著劑層的切割方法,基於刀片等的切割亦即刀片切割廣為人知。近年來,隨著半導體封裝件的高積體化及晶圓的薄化,隱形切割正在普及(參閱專利文獻1、2)。隱形切割係藉由雷射而在加工對象物的內部形成預定切割線之後,藉由沿著預定切割線來切割晶圓及接著劑層以獲得附有接著劑片之晶片之方法。Conventionally, as a method for dicing wafers and adhesive layers, dicing by a blade or the like, ie, blade dicing, is widely known. In recent years, stealth dicing has become popular due to the high integration of semiconductor packages and the thinning of wafers (see Patent Documents 1 and 2). Stealth dicing is a method of cutting the wafer and the adhesive layer along the predetermined cutting line to obtain a wafer with an adhesive sheet after forming a predetermined cutting line inside the object by laser.

[專利文獻1]日本特開2002-192370號公報 [專利文獻2]日本特開2003-338467號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2002-192370 [Patent Document 2] Japanese Unexamined Patent Publication No. 2003-338467

然而,在製造使用了被薄化的晶片之附有接著劑片之晶片時,存在成品率降低的問題。依據本發明人等的研究,發現在從黏著劑層上拾取附有接著劑片之晶片之前,在附有接著劑片之晶片的端部和黏著劑層之間,有時發生剝離。若發生這種剝離,則黏著劑層的剝離部分與氧接觸,在對黏著劑層照射紫外線之後,黏著劑層的相對於接著劑層的黏著力不會充分降低,拾取性會降低。However, there is a problem that the yield rate decreases when manufacturing the wafer with the adhesive sheet using the thinned wafer. According to the studies of the inventors of the present invention, it has been found that peeling may occur between the end of the wafer with the adhesive sheet and the adhesive layer before the wafer with the adhesive sheet is picked up from the adhesive layer. When such peeling occurs, the peeled portion of the adhesive layer comes into contact with oxygen, and after the ultraviolet ray is irradiated to the adhesive layer, the adhesive force of the adhesive layer to the adhesive layer is not sufficiently reduced, and the pick-up property decreases.

因此,本發明的主要目的為提供一種切割晶粒接合一體型膜,其即使在黏著劑層與氧接觸之情況下,在對黏著劑層照射紫外線時,亦能夠使黏著劑層的相對於接著劑層的黏著力充分降低。Therefore, the main object of the present invention is to provide a dicing die-bonding integrated film which can make the adhesive layer relative to the adhesive layer when the adhesive layer is irradiated with ultraviolet rays even when the adhesive layer is in contact with oxygen. The adhesion of the agent layer is sufficiently reduced.

本發明有關一種切割晶粒接合一體型膜。該切割晶粒接合一體型膜依序具備基材層、包含由紫外線固化型黏著劑組成之紫外線固化型黏著劑層之黏著劑層及接著劑層。包含於黏著劑層之紫外線固化型黏著劑層與接著劑層接觸而設置。紫外線固化型黏著劑包含具有可鏈聚合之官能基之(甲基)丙烯酸系樹脂(以下,有時稱為“(甲基)丙烯酸系樹脂A”。)及光聚合起始劑。紫外線固化型黏著劑至少包含第1光聚合起始劑、與第1光聚合起始劑的紫外線區域的最大吸收波長不同之第2光聚合起始劑作為光聚合起始劑。光聚合起始劑的含量相對於(甲基)丙烯酸系樹脂A的總量100質量份為1.5質量份以上。The present invention relates to a dicing die bonding integrated film. The dicing die bonding integrated film sequentially includes a base material layer, an adhesive layer including an ultraviolet curable adhesive layer composed of an ultraviolet curable adhesive, and an adhesive layer. The ultraviolet curable adhesive layer contained in the adhesive layer is provided in contact with the adhesive layer. The ultraviolet curable adhesive agent contains the (meth)acrylic resin (it may be called "(meth)acrylic resin A" hereafter) which has the functional group which can chain-polymerize, and a photoinitiator. The ultraviolet curable adhesive includes at least a first photoinitiator and a second photoinitiator having a different maximum absorption wavelength in the ultraviolet range from the first photoinitiator as a photoinitiator. Content of a photoinitiator is 1.5 mass parts or more with respect to 100 mass parts of total amounts of (meth)acrylic-type resin A.

依據這種切割晶粒接合一體型膜,光聚合起始劑的含量充分多,又,從能夠有效利用紫外線區域的光的觀點而言,即使在黏著劑層與氧接觸之情況下,在對黏著劑層照射紫外線時,亦能夠充分降低黏著劑層的黏著力。According to this dicing die bonding integrated film, the content of the photopolymerization initiator is sufficiently large, and from the viewpoint of effective use of light in the ultraviolet region, even when the adhesive layer is in contact with oxygen, the When the adhesive layer is irradiated with ultraviolet rays, the adhesive force of the adhesive layer can be sufficiently reduced.

(甲基)丙烯酸系樹脂A的官能基可以係選自丙烯醯基及甲基丙烯醯基中的至少一種。The functional group of the (meth)acrylic resin A may be at least one selected from an acryl group and a methacryl group.

關於(甲基)丙烯酸系樹脂A,其至少一部分可以被交聯劑交聯。Regarding (meth)acrylic resin A, at least a part thereof may be crosslinked by a crosslinking agent.

本發明的另一方面有關一種半導體裝置的製造方法。該半導體裝置的製造方法包括以下步驟。 (A)準備上述切割晶粒接合一體型膜之步驟(準備步驟) (B)切割晶圓之步驟(切割步驟) (C)對切割晶粒接合一體型膜的接著劑層貼附晶圓之步驟(晶圓貼附步驟) (D)藉由在冷卻條件下擴展基材層而獲得晶圓及接著劑層單片化而成之附有接著劑片之晶片之步驟(冷卻擴展步驟) (E)藉由對黏著劑層照射紫外線而降低黏著劑層的相對於附有接著劑片之晶片的黏著力之步驟(紫外線照射步驟) (F)從黏著劑層上拾取附有接著劑片之晶片之步驟(拾取步驟) (G)將所拾取之附有接著劑片之晶片安裝於基板或其他晶片上之步驟(安裝步驟) Another aspect of the present invention relates to a method of manufacturing a semiconductor device. The manufacturing method of the semiconductor device includes the following steps. (A) Step of preparing the above-mentioned dicing die bonding integrated film (preparation step) (B) Step of dicing wafer (dicing step) (C) The step of attaching the wafer to the adhesive layer of the diced die-bonding integrated film (wafer attaching step) (D) A step of obtaining a wafer with an adhesive sheet by expanding the substrate layer under cooling conditions and obtaining a wafer with an adhesive layer singulated (cooling expansion step) (E) A step of reducing the adhesion of the adhesive layer to the wafer with the adhesive sheet attached by irradiating the adhesive layer with ultraviolet rays (ultraviolet irradiation step) (F) Step of picking up the wafer with the adhesive sheet attached from the adhesive layer (pick-up step) (G) The step of mounting the picked-up wafer with the adhesive sheet on the substrate or other wafers (mounting step)

本發明提供一種[1]~[3]的切割晶粒接合一體型膜及[4]的半導體裝置的製造方法。The present invention provides the dicing die-bonding integrated film of [1] to [3] and the manufacturing method of the semiconductor device of [4].

[1]一種切割晶粒接合一體型膜,其依序具備基材層、包含由紫外線固化型黏著劑組成之紫外線固化型黏著劑層之黏著劑層、以及接著劑層,其中 前述包含於黏著劑層之前述紫外線固化型黏著劑層與前述接著劑層接觸而設置, 前述紫外線固化型黏著劑包含具有可鏈聚合之官能基之(甲基)丙烯酸系樹脂及光聚合起始劑, 前述紫外線固化型黏著劑至少包含第1光聚合起始劑、與前述第1光聚合起始劑的紫外線區域的最大吸收波長不同之第2光聚合起始劑作為前述光聚合起始劑, 前述光聚合起始劑的含量相對於前述(甲基)丙烯酸系樹脂的總量100質量份為1.5質量份以上。 [2]如[1]所述之切割晶粒接合一體型膜,其中 前述官能基係選自丙烯醯基及甲基丙烯醯基中的至少一種。 [3]如[1]或[2]所述之切割晶粒接合一體型膜,其中 前述(甲基)丙烯酸系樹脂的至少一部分被交聯劑交聯。 [4]一種半導體裝置的製造方法,其包括: (A)準備[1]至[3]之任一項所述之切割晶粒接合一體型膜之步驟; (B)切割晶圓之步驟; (C)對前述切割晶粒接合一體型膜的前述接著劑層貼附前述晶圓之步驟; (D)在冷卻條件下擴展前述基材層,藉此而獲得前述晶圓及前述接著劑層單片化而成之附有接著劑片之晶片之步驟; (E)對前述黏著劑層照射紫外線,藉此而降低前述黏著劑層的相對於前述附有接著劑片之晶片的黏著力之步驟; (F)從前述黏著劑層上拾取前述附有接著劑片之晶片之步驟;及 (G)將所拾取之前述附有接著劑片之晶片安裝於基板或其他晶片上之步驟。 [發明效果] [1] A dicing die bonding integrated film comprising, in this order, a base material layer, an adhesive layer including an ultraviolet curable adhesive layer composed of an ultraviolet curable adhesive, and an adhesive layer, wherein The aforementioned ultraviolet curable adhesive layer included in the adhesive layer is provided in contact with the aforementioned adhesive layer, The aforementioned ultraviolet curable adhesive includes a (meth)acrylic resin having chain-polymerizable functional groups and a photopolymerization initiator, The ultraviolet curable adhesive includes at least a first photoinitiator, and a second photoinitiator having a maximum absorption wavelength in an ultraviolet region different from that of the first photoinitiator as the photoinitiator, Content of the said photoinitiator is 1.5 mass parts or more with respect to 100 mass parts of total amounts of the said (meth)acrylic-type resin. [2] The dicing die bonding integrated film according to [1], wherein The aforementioned functional group is at least one selected from acryl and methacryl. [3] The dicing die-bonding integrated film according to [1] or [2], wherein At least a part of the (meth)acrylic resin is crosslinked by a crosslinking agent. [4] A method of manufacturing a semiconductor device, comprising: (A) A step of preparing the dicing die-bonding integrated film described in any one of [1] to [3]; (B) Steps of dicing wafers; (C) A step of attaching the aforementioned wafer to the aforementioned adhesive layer of the aforementioned diced die-bonding integrated film; (D) The step of expanding the aforementioned substrate layer under cooling conditions, thereby obtaining a wafer with an adhesive sheet formed by singulating the aforementioned wafer and the aforementioned adhesive layer; (E) A step of irradiating ultraviolet rays to the adhesive layer, thereby reducing the adhesive force of the adhesive layer relative to the wafer with the adhesive sheet attached; (F) the step of picking up the aforementioned wafer with the adhesive sheet attached from the aforementioned adhesive layer; and (G) A step of mounting the picked-up wafer with the adhesive sheet on a substrate or other wafers. [Invention effect]

依本發明,提供一種切割晶粒接合一體型膜,其即使在黏著劑層與氧接觸之情況下,在對黏著劑層照射紫外線時,亦能夠使黏著劑層的相對於接著劑層的黏著力充分降低。又,依本發明,提供一種使用了這種切割晶粒接合一體型膜之半導體裝置的製造方法。According to the present invention, there is provided a dicing die-bonding integrated film capable of making the adhesive layer adhere to the adhesive layer when the adhesive layer is irradiated with ultraviolet rays even when the adhesive layer is in contact with oxygen. The force is fully reduced. Also, according to the present invention, there is provided a method of manufacturing a semiconductor device using such a diced die-bonding integrated film.

以下,參照圖示並對本發明的實施形態進行詳細說明。其中,本發明並不限定於以下實施形態。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following embodiments.

在本說明書中,使用“~”表示之數值範圍表示將記載於“~”前後之數值分別作為最小值及最大值而包含之範圍。在本說明書中階段性記載之數值範圍中,某階段的數值範圍的上限值或下限值,能夠替換為其他階段的數值範圍的上限值或下限值。又,在本說明書中所記載之數值範圍中,其數值範圍的上限值或下限值可以替換為實施例中所示出之值。又,分別記載之上限值及下限值能夠任意組合。又,在本說明書中,“(甲基)丙烯酸酯”係指,丙烯酸酯及與其對應之甲基丙烯酸酯中的至少一者。在“(甲基)丙烯醯”,“(甲基)丙烯酸”等其他類似表述中亦相同。又,“(聚)”表示存在和不存在“聚”的前綴這兩種情況。又,“A或B”只要包含A及B中的任一者即可,亦可以包含兩者。又,以下例示之材料只要沒有特別指定,則可以單獨使用1種,亦可以組合2種以上來使用。在組成物中相當於各成分之物質存在複數個之情況下,只要沒有特別指定,組成物中的各成分的含量則表示存在於組成物中之該複數個物質的合計量。In this specification, the numerical range represented by "-" shows the range which includes the numerical value described before and after "-" as a minimum value and a maximum value, respectively. In the numerical ranges described step by step in this specification, the upper limit or lower limit of the numerical range of a certain step can be replaced by the upper limit or lower limit of the numerical range of other steps. In addition, in the numerical range described in this specification, the upper limit or the lower limit of the numerical range may be replaced with the value shown in an Example. In addition, the upper limit and lower limit described separately can be combined arbitrarily. Moreover, in this specification, "(meth)acrylate" means at least one of acrylate and the corresponding methacrylate. The same applies to "(meth)acryl", "(meth)acrylic" and other similar expressions. Also, "(poly)" indicates the existence and non-existence of the prefix of "poly". Moreover, "A or B" should just include any one of A and B, and may include both. In addition, unless otherwise specified, materials exemplified below may be used alone or in combination of two or more. When there are a plurality of substances corresponding to each component in the composition, unless otherwise specified, the content of each component in the composition means the total amount of the plurality of substances present in the composition.

[切割晶粒接合一體型膜] 圖1(a)係表示切割晶粒接合一體型膜的一實施形態之俯視圖,圖1(b)係沿著圖1(a)所示的B-B線之示意剖面圖。切割晶粒接合一體型膜10(以下,依據情況簡稱為“膜10”。)能夠較佳地使用於包含(A)步驟~(G)步驟之半導體裝置的製造製程。 [Saw Die Bonding Integrated Film] FIG. 1( a ) is a plan view showing one embodiment of a dicing die-bonding integrated film, and FIG. 1( b ) is a schematic cross-sectional view along line B-B shown in FIG. 1( a ). The dicing die-bonding integrated film 10 (hereinafter, simply referred to as “the film 10 ” as the case may be) can be suitably used in the manufacturing process of a semiconductor device including the (A) step to (G) step.

膜10依序具備基材層1、由紫外線固化型黏著劑組成之黏著劑層3及接著劑層5。在本實施形態中,例示出在正方形的基材層1上形成了1個黏著劑層3及接著劑層5的積層體之態樣,但可以係基材層1具有規定的長度(例如,100m以上),並且黏著劑層3及接著劑層5的積層體以沿著其長度方向排列之方式以規定的間隔配置之態樣。The film 10 includes a substrate layer 1 , an adhesive layer 3 composed of an ultraviolet-curable adhesive, and an adhesive layer 5 in this order. In this embodiment, an example is shown in which a laminate of one adhesive layer 3 and adhesive layer 5 is formed on a square base material layer 1, but the base material layer 1 may have a predetermined length (for example, 100 m or more), and the laminates of the adhesive layer 3 and the adhesive layer 5 are arranged at predetermined intervals along the longitudinal direction thereof.

<黏著劑層> 黏著劑層3包含由紫外線固化型黏著劑組成之紫外線固化型黏著劑層。紫外線固化型黏著劑包含(甲基)丙烯酸系樹脂及光聚合起始劑。關於(甲基)丙烯酸系樹脂,其至少一部分可以藉由交聯劑交聯。以下,對含有紫外線固化型黏著劑之成分進行詳細說明。 <Adhesive layer> The adhesive layer 3 includes an ultraviolet curable adhesive layer composed of an ultraviolet curable adhesive. The ultraviolet curable adhesive includes a (meth)acrylic resin and a photopolymerization initiator. Regarding the (meth)acrylic resin, at least a part thereof can be crosslinked by a crosslinking agent. Hereinafter, components containing an ultraviolet curable adhesive will be described in detail.

(具有可鏈聚合之官能基之(甲基)丙烯酸系樹脂) 紫外線固化型黏著劑包含(甲基)丙烯酸系樹脂A。官能基可以係選自丙烯醯基及甲基丙烯醯基中的至少一種。(甲基)丙烯酸系樹脂A中的官能基的含量例如可以係0.1~1.2mmol/g,亦可以係0.3~1.0mmol/g或0.5~0.8mmol/g。若官能基的含量為0.1mmol/g以上,則能夠藉由紫外線的照射而適當地降低黏著力,另一方面,若為1.2mmol/g以下,則具有容易實現優異的拾取性之傾向。 ((meth)acrylic resins with chain-polymerizable functional groups) The ultraviolet curable adhesive contains (meth)acrylic resin A. The functional group may be at least one selected from acryl and methacryl. Content of the functional group in (meth)acrylic resin A may be 0.1-1.2 mmol/g, 0.3-1.0 mmol/g, or 0.5-0.8 mmol/g, for example. When the content of the functional group is 0.1 mmol/g or more, the adhesive force can be appropriately reduced by irradiation of ultraviolet rays. On the other hand, if it is 1.2 mmol/g or less, excellent pick-up properties tend to be easily achieved.

(甲基)丙烯酸系樹脂A能夠藉由使具有選自羥基、環氧丙基(環氧基)、胺基等中的至少一種官能基之(甲基)丙烯酸系樹脂(以下,有時稱為“(甲基)丙烯酸系樹脂a”。)與後述之導入官能基之化合物進行反應而獲得。(甲基)丙烯酸系樹脂A亦可稱為(甲基)丙烯酸系樹脂a與導入官能基之化合物的反應物。The (meth)acrylic resin A can be obtained by making a (meth)acrylic resin (hereinafter sometimes referred to as It is "(meth)acrylic resin a".) It is obtained by reacting with the compound which introduce|transduces a functional group mentioned later. The (meth)acrylic resin A may also be referred to as a reaction product of the (meth)acrylic resin a and the functional group-introducing compound.

(甲基)丙烯酸系樹脂a能夠藉由公知的方法來合成。作為合成方法,例如,可以舉出溶液聚合法、懸浮聚合法、乳化聚合法、總體聚合法、析出聚合法、氣相聚合法、電漿聚合法、超臨界聚合法。又,作為聚合反應的種類,亦可以舉出諸如自由基聚合、陽離子聚合、陰離子聚合、活性自由基聚合、活性陽離子聚合、活性陰離子聚合、配位聚合、永生聚合等其他ATRP(原子移動自由基聚合)及RAFT(可逆加成裂解鏈轉移聚合)等方法。其中,藉由使用溶液聚合法進行自由基聚合來合成,除了經濟性好、反應速率快、容易聚合控制等以外,還具有能夠直接使用藉由聚合而獲得之樹脂溶液來進行配合等優點。The (meth)acrylic resin a can be synthesized by a known method. Examples of synthesis methods include solution polymerization, suspension polymerization, emulsion polymerization, bulk polymerization, precipitation polymerization, gas phase polymerization, plasma polymerization, and supercritical polymerization. Also, as the type of polymerization reaction, other ATRP (atom transfer radical polymerization) such as radical polymerization, cationic polymerization, anionic polymerization, living radical polymerization, living cationic polymerization, living anionic polymerization, coordination polymerization, immortal polymerization, etc. Polymerization) and RAFT (Reversible Addition Fragmentation Chain Transfer Polymerization) and other methods. Among them, the synthesis by radical polymerization using the solution polymerization method not only has good economy, fast reaction rate, easy polymerization control, etc., but also has the advantages of being able to directly use the resin solution obtained by polymerization for compounding.

其中,以藉由使用溶液聚合法進行自由基聚合來獲得(甲基)丙烯酸系樹脂a之方法為例,對(甲基)丙烯酸系樹脂a的合成法進行詳細說明。Herein, the synthesis method of (meth)acrylic resin a will be described in detail by taking the method of obtaining (meth)acrylic resin a by performing radical polymerization using a solution polymerization method as an example.

作為合成(甲基)丙烯酸系樹脂a時使用之單體,只要係在一個分子中具有1個(甲基)丙烯醯基者,則並無特別限制。作為其具體例,可以舉出甲基丙烯酸甲酯、乙基(甲基)丙烯酸酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸第三丁酯、丁氧基乙基(甲基)丙烯酸酯、異戊基(甲基)丙烯酸酯、己基(甲基)丙烯酸酯、2-乙基己基(甲基)丙烯酸酯、庚基(甲基)丙烯酸酯、辛基庚基(甲基)丙烯酸酯、壬基(甲基)丙烯酸酯、癸烷基(甲基)丙烯酸酯、十一烷基(甲基)丙烯酸酯、月桂基(甲基)丙烯酸酯、十三烷基(甲基)丙烯酸酯、十四烷基(甲基)丙烯酸酯、十五烷基(甲基)丙烯酸酯、十六烷基(甲基)丙烯酸酯、十八烷基(甲基)丙烯酸酯、二十二烷基(甲基)丙烯酸酯、甲氧基聚乙二醇(甲基)丙烯酸酯、乙氧基聚乙二醇(甲基)丙烯酸酯、甲氧基聚丙二醇(甲基)丙烯酸酯、乙氧基聚丙二醇(甲基)丙烯酸酯、單(2-(甲基)丙烯醯氧基乙基)琥珀酸酯等脂肪族(甲基)丙烯酸酯;環(甲基)丙烯酸戊酯、(甲基)丙烯酸環己酯、環(甲基)丙烯酸戊酯、二環戊烷基(甲基)丙烯酸酯、二環戊烯基(甲基)丙烯酸酯、異莰基(甲基)丙烯酸酯、單(2-(甲基)丙烯醯氧基乙基)四氫鄰苯二甲酸酯、單(2-(甲基)丙烯醯氧基乙基)六氫鄰苯二甲酸酯等脂環式(甲基)丙烯酸酯;苄基(甲基)丙烯酸酯、苯基(甲基)丙烯酸酯、鄰聯苯基(甲基)丙烯酸酯、1-萘基(甲基)丙烯酸酯、2-萘基(甲基)丙烯酸酯、苯氧基乙基(甲基)丙烯酸酯、對枯基苯氧基乙基(甲基)丙烯酸酯、鄰苯基苯氧基乙基(甲基)丙烯酸酯、1-萘氧基乙基(甲基)丙烯酸酯、2-萘氧基乙基(甲基)丙烯酸酯、苯氧基聚乙二醇(甲基)丙烯酸酯、壬基苯氧基聚乙二醇(甲基)丙烯酸酯、苯氧基聚丙二醇(甲基)丙烯酸酯、2-羥基-3-苯氧基丙基(甲基)丙烯酸酯、2-羥基-3-(鄰苯基苯氧基)丙基(甲基)丙烯酸酯、2-羥基-3-(1-萘氧基)丙基(甲基)丙烯酸酯、2-羥基-3-(2-萘氧基)丙基(甲基)丙烯酸酯等芳香族(甲基)丙烯酸酯;2-四氫糠基(甲基)丙烯酸酯、N-(甲基)丙烯醯氧基乙基六氫鄰苯二甲醯亞胺、2-(甲基)丙烯醯氧基乙基-N-咔唑等雜環式(甲基)丙烯酸酯、該等己內酯變性體、ω-羧基-聚己內酯單(甲基)丙烯酸酯、環氧丙基(甲基)丙烯酸酯、α-乙基環氧丙基(甲基)丙烯酸酯、α-丙基環氧丙基(甲基)丙烯酸酯、α-丁基環氧丙基(甲基)丙烯酸酯、2-甲基環氧丙基(甲基)丙烯酸酯、2-乙基環氧丙基(甲基)丙烯酸酯、2-丙基環氧丙基(甲基)丙烯酸酯、3,4-環氧基(甲基)丙烯酸丁酯、3,4-環氧基庚基(甲基)丙烯酸酯、α-乙基-6,7-環氧基庚基(甲基)丙烯酸酯、3,4-環氧基環己基甲基丙烯酸甲酯、鄰乙烯基芐基環氧丙基醚、間乙烯基芐基環氧丙基醚、對乙烯基芐基環氧丙基醚等具有乙烯性不飽和基和環氧基之化合物;(2-乙基-2-氧雜環丁烷基)甲基丙烯酸甲酯、(2-甲基-2-氧雜環丁烷基)甲基丙烯酸甲酯、2-(2-乙基-2-氧雜環丁烷基)乙基(甲基)丙烯酸酯、2-(2-甲基-2-氧雜環丁烷基)乙基(甲基)丙烯酸酯、3-(2-乙基-2-氧雜環丁烷基)丙基(甲基)丙烯酸酯、3-(2-甲基-2-氧雜環丁烷基)丙基(甲基)丙烯酸酯等具有乙烯性不飽和基和氧環丁烷基之化合物;2-(甲基)丙烯醯氧基乙基異氰酸酯等具有乙烯性不飽和基和異氰酸酯基之化合物;2-羥基乙基(甲基)丙烯酸酯、2-羥基丙基(甲基)丙烯酸酯、4-羥基(甲基)丙烯酸丁酯、3-氯-2-羥基丙基(甲基)丙烯酸酯、2-羥基(甲基)丙烯酸丁酯等具有乙烯性不飽和基和羥基之化合物。能夠藉由將該等適當組合而獲得作為目標的(甲基)丙烯酸系樹脂a。The monomer used for synthesizing the (meth)acrylic resin a is not particularly limited as long as it has one (meth)acryl group in one molecule. Specific examples thereof include methyl methacrylate, ethyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, tert-butyl (meth)acrylate, Butoxyethyl (meth)acrylate, Isoamyl (meth)acrylate, Hexyl (meth)acrylate, 2-Ethylhexyl (meth)acrylate, Heptyl (meth)acrylate , Octylheptyl (meth)acrylate, Nonyl (meth)acrylate, Decyl (meth)acrylate, Undecyl (meth)acrylate, Lauryl (meth)acrylate, Decyl (meth)acrylate, Tridecyl(meth)acrylate, tetradecyl(meth)acrylate, pentadecyl(meth)acrylate, hexadecyl(meth)acrylate, octadecyl(meth)acrylate ) acrylate, behenyl (meth)acrylate, methoxypolyethylene glycol (meth)acrylate, ethoxypolyethylene glycol (meth)acrylate, methoxypolypropylene glycol ( Aliphatic (meth)acrylates such as meth)acrylate, ethoxylated polypropylene glycol (meth)acrylate, mono(2-(meth)acryloxyethyl)succinate, etc.; cyclo(meth)acrylate ) pentyl acrylate, cyclohexyl (meth)acrylate, pentyl cyclo(meth)acrylate, dicyclopentyl (meth)acrylate, dicyclopentenyl (meth)acrylate, isobornyl (Meth)acrylates, mono(2-(meth)acryloxyethyl)tetrahydrophthalate, mono(2-(meth)acryloxyethyl)hexahydrophthalate Alicyclic (meth)acrylates such as dicarboxylates; benzyl (meth)acrylate, phenyl (meth)acrylate, o-biphenyl (meth)acrylate, 1-naphthyl (meth)acrylate base) acrylate, 2-naphthyl (meth)acrylate, phenoxyethyl (meth)acrylate, p-cumylphenoxyethyl (meth)acrylate, o-phenylphenoxyethyl 1-naphthyloxyethyl (meth)acrylate, 1-naphthyloxyethyl (meth)acrylate, 2-naphthyloxyethyl (meth)acrylate, phenoxy polyethylene glycol (meth)acrylate, Nonylphenoxy polyethylene glycol (meth)acrylate, phenoxy polypropylene glycol (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth)acrylate, 2-hydroxy- 3-(o-phenylphenoxy)propyl (meth)acrylate, 2-hydroxy-3-(1-naphthyloxy)propyl (meth)acrylate, 2-hydroxy-3-(2- Aromatic (meth)acrylates such as naphthyloxy)propyl (meth)acrylate; 2-tetrahydrofurfuryl (meth)acrylate, N-(meth)acryloxyethylhexahydroortho Phthalimide, 2-(meth)acryloxyethyl-N-carbazole and other heterocyclic (meth)acrylates, such caprolactone modified products, ω-carboxy-polycaprolactone Ester Mono(meth)acrylate, Glycidyl(meth)acrylate, α-Ethylglycidyl(meth)acrylate, α-Propylglycidyl(meth)acrylate, α-Butylglycidyl (meth)acrylate, 2-methylglycidyl (meth)acrylate, 2-ethylglycidyl (meth)acrylate, 2-propylcyclopropyl Oxypropyl (meth)acrylate, 3,4-epoxybutyl (meth)acrylate, 3,4-epoxyheptyl (meth)acrylate, α-ethyl-6,7- Epoxyheptyl (meth)acrylate, 3,4-epoxycyclohexylmethyl methacrylate, o-vinylbenzylglycidyl ether, m-vinylbenzylglycidyl ether, p- Vinyl benzyl glycidyl ether and other compounds with ethylenically unsaturated groups and epoxy groups; (2-ethyl-2-oxetanyl) methyl methacrylate, (2-methyl- 2-oxetanyl)methyl methacrylate, 2-(2-ethyl-2-oxetanyl)ethyl (meth)acrylate, 2-(2-methyl-2 -oxetanyl)ethyl (meth)acrylate, 3-(2-ethyl-2-oxetanyl)propyl (meth)acrylate, 3-(2-methyl - Compounds with ethylenically unsaturated groups and oxetane groups such as 2-oxetanyl)propyl (meth)acrylate; 2-(meth)acryloxyethyl isocyanate, etc. Compounds with unsaturated groups and isocyanate groups; 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxy (meth)butyl acrylate, 3-chloro-2 -Compounds with ethylenically unsaturated groups and hydroxyl groups, such as hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, etc. The target (meth)acrylic resin a can be obtained by combining these suitably.

(甲基)丙烯酸系樹脂a具有選自羥基、環氧丙基(環氧基)、胺基等中的至少一種官能基作為後述之導入官能基之化合物或與交聯劑的反應點。作為用於合成具有羥基之(甲基)丙烯酸系樹脂a之單體,例如,可以舉出2-羥基乙基(甲基)丙烯酸酯、2-羥基丙基(甲基)丙烯酸酯、4-羥基(甲基)丙烯酸丁酯、3-氯-2-羥基丙基(甲基)丙烯酸酯、2-羥基(甲基)丙烯酸丁酯等具有乙烯性不飽和基和羥基之化合物等。The (meth)acrylic resin a has at least one functional group selected from a hydroxyl group, a glycidyl group (epoxy group), an amine group, and the like as a reaction point for a functional group-introducing compound or a crosslinking agent to be described later. Examples of monomers used to synthesize (meth)acrylic resin a having a hydroxyl group include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4- Butyl hydroxy(meth)acrylate, 3-chloro-2-hydroxypropyl(meth)acrylate, 2-hydroxy(meth)butyl acrylate, etc. Compounds having ethylenically unsaturated groups and hydroxyl groups, etc.

作為用於合成具有環氧丙基之(甲基)丙烯酸系樹脂a之單體,可以舉出環氧丙基(甲基)丙烯酸酯、α-乙基環氧丙基(甲基)丙烯酸酯、α-丙基環氧丙基(甲基)丙烯酸酯、α-丁基環氧丙基(甲基)丙烯酸酯、2-甲基環氧丙基(甲基)丙烯酸酯、2-乙基環氧丙基(甲基)丙烯酸酯、2-丙基環氧丙基(甲基)丙烯酸酯、3,4-環氧基(甲基)丙烯酸丁酯、3,4-環氧基庚基(甲基)丙烯酸酯、α-乙基-6,7-環氧基庚基(甲基)丙烯酸酯、3,4-環氧基環己基甲基丙烯酸甲酯、鄰乙烯基芐基環氧丙基醚、間乙烯基芐基環氧丙基醚、對乙烯基芐基環氧丙基醚等具有乙烯性不飽和基和環氧基之化合物。Examples of monomers used to synthesize (meth)acrylic resin a having a glycidyl group include glycidyl (meth)acrylate, α-ethylglycidyl (meth)acrylate , α-propylglycidyl (meth)acrylate, α-butylglycidyl (meth)acrylate, 2-methylglycidyl (meth)acrylate, 2-ethyl Glycidyl (meth)acrylate, 2-propylglycidyl (meth)acrylate, 3,4-epoxybutyl (meth)acrylate, 3,4-epoxyheptyl (meth)acrylate, α-ethyl-6,7-epoxyheptyl (meth)acrylate, 3,4-epoxycyclohexyl methyl methacrylate, o-vinylbenzyl epoxy Propyl ether, m-vinyl benzyl glycidyl ether, p-vinyl benzyl glycidyl ether and other compounds with ethylenically unsaturated groups and epoxy groups.

(甲基)丙烯酸系樹脂A包含可鏈聚合之官能基。可鏈聚合之官能基例如係選自丙烯醯基及甲基丙烯醯基中的至少一種。可鏈聚合之官能基例如能夠藉由使具有選自如上所述之方式合成之羥基、環氧丙基(環氧基)、胺基等中的至少一種的官能基之(甲基)丙烯酸系樹脂a和以下化合物(導入官能基之化合物)反應而導入到該(甲基)丙烯酸系樹脂a中。作為導入官能基之化合物的具體例,可以舉出:2-甲基丙烯醯氧基乙基異氰酸酯、α,α-二甲基-4-異丙烯基芐基異氰酸酯、烯丙基異氰酸酯、1,1-(雙丙烯醯氧基甲基)乙基異氰酸酯;藉由二異氰酸酯化合物或聚異氰酸酯化合物和羥基乙基(甲基)丙烯酸酯或4-羥基丁基乙基(甲基)丙烯酸酯進行反應而獲得之丙烯醯單異氰酸酯化合物;藉由二異氰酸酯化合物或聚異氰酸酯化合物、多元醇化合物、羥基乙基(甲基)丙烯酸酯進行反應而獲得之丙烯醯單異氰酸酯化合物等。在該等中,導入官能基之化合物可以係2-甲基丙烯醯氧基乙基異氰酸酯。(Meth)acrylic resin A contains chain-polymerizable functional groups. The chain-polymerizable functional group is, for example, at least one selected from acryl and methacryl. The chain-polymerizable functional group, for example, can be obtained by making a (meth)acrylic system having at least one functional group selected from hydroxyl, glycidyl (epoxy) and amine groups synthesized as described above. Resin a is introduced into this (meth)acrylic resin a by reacting with the following compound (functional group introducing compound). Specific examples of compounds introducing functional groups include: 2-methacryloxyethyl isocyanate, α,α-dimethyl-4-isopropenylbenzyl isocyanate, allyl isocyanate, 1, 1-(Bisacryloxymethyl)ethyl isocyanate; by reacting a diisocyanate compound or polyisocyanate compound with hydroxyethyl(meth)acrylate or 4-hydroxybutylethyl(meth)acrylate Acryl monoisocyanate compound obtained by reaction; acryl monoisocyanate compound obtained by reacting diisocyanate compound or polyisocyanate compound, polyol compound, hydroxyethyl (meth)acrylate, etc. Among them, the compound introducing the functional group may be 2-methacryloxyethyl isocyanate.

(甲基)丙烯酸系樹脂A可以主要以選自羥基、環氧丙基(環氧基)、胺基等中的至少一種官能基作為反應點,其反應點中的一部分藉由交聯劑而交聯。亦即,(甲基)丙烯酸系樹脂A中的至少一部分可以藉由交聯劑而交聯。紫外線固化型黏著劑可以包含具有可鏈聚合之官能基之、藉由交聯劑而交聯之(甲基)丙烯酸系樹脂作為(甲基)丙烯酸系樹脂A。The (meth)acrylic resin A may mainly have at least one functional group selected from hydroxyl, glycidyl (epoxy), amine, etc. crosslinking. That is, at least a part of (meth)acrylic resin A can be crosslinked by a crosslinking agent. The ultraviolet curable adhesive may contain (meth)acrylic resin A which has chain-polymerizable functional groups and is crosslinked by a crosslinking agent.

交聯劑例如以控制黏著劑層的儲存模數和/或黏著性為目的來使用。交聯劑只要係在一個分子中具有2個以上官能基之化合物即可,該官能基能夠與選自(甲基)丙烯酸系樹脂A所具有之羥基、環氧丙基、胺基等中的至少一種官能基進行反應。作為藉由(甲基)丙烯酸系樹脂A和交聯劑的反應而形成之鍵,例如,可以舉出酯鍵、醚鍵、醯胺鍵、醯亞胺鍵、胺基甲酸酯鍵、脲鍵等。The crosslinking agent is used for the purpose of controlling the storage modulus and/or adhesiveness of the adhesive layer, for example. As long as the crosslinking agent is a compound having two or more functional groups in one molecule, the functional groups can be combined with the hydroxyl group, glycidyl group, amino group, etc. of the (meth)acrylic resin A. At least one functional group reacts. Examples of the bond formed by the reaction between the (meth)acrylic resin A and the crosslinking agent include an ester bond, an ether bond, an amide bond, an imide bond, a urethane bond, and a urea bond. keys etc.

交聯劑例如可以係在一個分子中具有2個以上的異氰酸酯基之多官能異氰酸酯。若使用這種多官能異氰酸酯,則能夠容易與(甲基)丙烯酸系樹脂A所具有之羥基、環氧丙基、胺基等進行反應,形成牢固的交聯結構。The crosslinking agent may be, for example, a polyfunctional isocyanate having two or more isocyanate groups in one molecule. When such polyfunctional isocyanate is used, it can easily react with the hydroxyl group, glycidyl group, amino group, etc. which (meth)acrylic-type resin A has, and can form a strong crosslinked structure.

作為在一個分子中具有2個以上的異氰酸酯基之多官能異氰酸酯,例如,可以舉出2,4-甲苯二異氰酸酯、2,6-甲苯二異氰酸酯、1,3-二甲苯二異氰酸酯、1,4-二甲苯二異氰酸酯、二苯基甲烷-4,4’-二異氰酸酯、二苯基甲烷-2,4’-二異氰酸酯、3-甲基二苯基甲烷二異氰酸酯、六亞甲基二異氰酸酯、異佛爾酮二異氰酸酯、二環己基甲烷-4,4’-二異氰酸酯、二環己基甲烷-2,4’-二異氰酸酯、離胺酸異氰酸酯等異氰酸酯化合物等。Examples of polyfunctional isocyanates having two or more isocyanate groups in one molecule include 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 1,3-xylene diisocyanate, 1,4 -Xylene diisocyanate, diphenylmethane-4,4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, Isocyanate compounds such as isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, lysine isocyanate, and the like.

交聯劑可以係多官能異氰酸酯和在一個分子中具有2個以上的羥基之多元醇的反應物(含有異氰酸酯基之寡聚物)。作為在一個分子中具有2個以上的羥基之多元醇,例如,可以舉出乙二醇、丙二醇、丁二醇、1,6-己二醇、1,8-辛二醇、1,9-壬二醇、1,10-癸二醇、1,11-十一烷二醇、1,12-十二烷二醇、甘油、三羥甲基丙烷、新戊四醇、二新戊四醇、1,4-環己二醇、1,3-環己二醇等。The crosslinking agent may be a reactant (isocyanate group-containing oligomer) of a polyfunctional isocyanate and a polyol having two or more hydroxyl groups in one molecule. Examples of polyhydric alcohols having two or more hydroxyl groups in one molecule include ethylene glycol, propylene glycol, butanediol, 1,6-hexanediol, 1,8-octanediol, 1,9- Nonanediol, 1,10-decanediol, 1,11-undecanediol, 1,12-dodecanediol, glycerin, trimethylolpropane, neopentyl glycol, dipenteopentyl glycol , 1,4-cyclohexanediol, 1,3-cyclohexanediol, etc.

在該等中,交聯劑可以係在一個分子中具有2個以上的異氰酸酯基之多官能異氰酸酯和在一個分子中具有3個以上的羥基之多元醇的反應物(含有異氰酸酯基之寡聚物)。藉由將含有這種異氰酸酯基之寡聚物用作交聯劑,黏著劑層3形成緻密的交聯結構,藉此,具有能夠在拾取步驟中抑制黏著劑附著於接著劑層5之傾向。In these, the crosslinking agent may be a reactant of a polyfunctional isocyanate having 2 or more isocyanate groups in one molecule and a polyol having 3 or more hydroxyl groups in one molecule (isocyanate group-containing oligomer ). By using such an isocyanate group-containing oligomer as a crosslinking agent, the adhesive layer 3 forms a dense crosslinked structure, thereby tending to suppress adhesion of the adhesive to the adhesive layer 5 in the pickup step.

使(甲基)丙烯酸系樹脂A與交聯劑反應時的交聯劑的含量能夠依據對黏著劑層求出之凝聚力、斷裂伸長率、與接著劑層的黏附性等來適當設定。具體而言,交聯劑的含量相對於(甲基)丙烯酸系樹脂A的總量100質量份,例如可以為0.1~10質量份,0.2~7質量份或0.3~5質量份。若交聯劑的含量在這種範圍內,則能夠平衡性良好地兼顧切割步驟中對黏著劑層要求之特性、以及在晶粒接合步驟中對黏著劑層要求之特性,並且亦能夠獲得優異的拾取性。The content of the crosslinking agent when reacting the (meth)acrylic resin A with the crosslinking agent can be appropriately set in accordance with the cohesive force, elongation at break, adhesiveness with the adhesive layer, etc. obtained for the adhesive layer. Specifically, the content of the crosslinking agent may be, for example, 0.1 to 10 parts by mass, 0.2 to 7 parts by mass, or 0.3 to 5 parts by mass with respect to 100 parts by mass of the total amount of the (meth)acrylic resin A. If the content of the crosslinking agent is within this range, the characteristics required for the adhesive layer in the dicing step and the characteristics required for the adhesive layer in the die bonding step can be well balanced, and excellent pickup.

若交聯劑的含量相對於(甲基)丙烯酸系樹脂A的總量100質量份為0.1質量份以上,則具有不易使交聯結構的形成變得不充分,並且在拾取步驟中充分降低與接著劑層的界面密接力,而在拾取時不易產生不良之傾向。另一方面,若交聯劑的含量相對於(甲基)丙烯酸系樹脂A的總量100質量份為10質量份以下,則不易使黏著劑層變得過硬,在擴展步驟中具有晶片不易剝離之傾向。When the content of the crosslinking agent is 0.1 parts by mass or more with respect to 100 parts by mass of the total amount of the (meth)acrylic resin A, it is difficult to make the formation of the crosslinked structure insufficient, and it is sufficiently reduced in the pick-up step. The interface adhesion of the adhesive layer is not easy to produce poor tendency when picking up. On the other hand, when the content of the crosslinking agent is 10 parts by mass or less with respect to 100 parts by mass of the total amount of (meth)acrylic resin A, it is difficult to make the adhesive layer too hard, and it is difficult to peel off the wafer in the expansion step. tendency.

(甲基)丙烯酸系樹脂A可以係紫外線固化型黏著劑(或黏著劑層3)的主成分。(甲基)丙烯酸系樹脂A的含量以紫外線固化型黏著劑(或黏著劑層3)的總量為基準,可以為80質量%以上、85質量%以上、90質量%以上、95質量%以上或98質量%以上。The (meth)acrylic resin A may be the main component of the ultraviolet curable adhesive (or the adhesive layer 3 ). The content of (meth)acrylic resin A may be 80 mass % or more, 85 mass % or more, 90 mass % or more, or 95 mass % or more based on the total amount of the ultraviolet curable adhesive (or adhesive layer 3 ). Or more than 98% by mass.

(光聚合起始劑) 紫外線固化型黏著劑至少包含第1光聚合起始劑、與第1光聚合起始劑的紫外線區域的最大吸收波長不同之第2光聚合起始劑作為光聚合起始劑。 (photopolymerization initiator) The ultraviolet curable adhesive includes at least a first photoinitiator and a second photoinitiator having a different maximum absorption wavelength in the ultraviolet range from the first photoinitiator as a photoinitiator.

在本說明書中,“紫外線區域”表示波長220~400nm的區域,“最大吸收波長”係指,在光譜吸收光譜中,存在複數個吸收峰(吸收最大值)之情況下,在其中顯示最大峰強度(吸光度)之吸收峰的峰強度。光譜吸收光譜例如能夠藉由實施例中記載之方法來測量。In this specification, the "ultraviolet region" means the region with a wavelength of 220 to 400 nm, and the "maximum absorption wavelength" means that in the spectral absorption spectrum, when there are multiple absorption peaks (absorption maximums), the largest peak is displayed among them. Intensity (absorbance) is the peak intensity of the absorption peak. The spectral absorption spectrum can be measured, for example, by the method described in the Examples.

紫外線固化型黏著劑可以將紫外線區域的最大吸收波長不同之光聚合起始劑包含2種或2種以上,亦可以包含3種或3種以上,或者亦可以包含4種或4種以上。紫外線固化型黏著劑可以進一步包含紫外線區域的最大吸收波長與第1光聚合起始劑及第2光聚合起始劑不同之第3光聚合起始劑作為光聚合起始劑,除了第3光聚合起始劑以外,亦可以進一步包含紫外線區域的最大吸收波長與第1光聚合起始劑、第2光聚合起始劑及第3光聚合起始劑不同之第4光聚合起始劑。The ultraviolet curable adhesive may contain two or more photopolymerization initiators having different maximum absorption wavelengths in the ultraviolet region, may contain three or more types, or may contain four or more types. The ultraviolet curable adhesive may further contain a third photopolymerization initiator having a maximum absorption wavelength in the ultraviolet region different from that of the first photopolymerization initiator and the second photopolymerization initiator, as a photopolymerization initiator, in addition to the third photopolymerization initiator. In addition to the polymerization initiator, you may further contain the 4th photoinitiator which differs from the 1st photoinitiator, the 2nd photoinitiator, and the 3rd photoinitiator in the maximum absorption wavelength of an ultraviolet region.

光聚合起始劑只要係能夠藉由照射紫外線而發生鏈聚合之活性種,則並無特別限制。作為光聚合起始劑,例如,可以舉出光自由基聚合起始劑等。其中,可鏈聚合之活性種表示藉由與可鏈聚合之官能基反應而開始聚合反應者。The photopolymerization initiator is not particularly limited as long as it is an active species capable of chain polymerization by irradiating ultraviolet rays. As a photoinitiator, a photoradical polymerization initiator etc. are mentioned, for example. Wherein, the chain-polymerizable active species refers to one that initiates a polymerization reaction by reacting with a chain-polymerizable functional group.

作為光自由基聚合起始劑,例如,可以舉出2,2-二甲氧基-1,2-二苯基乙烷-1-酮等苯偶姻縮酮;1-羥基環己基苯基甲酮、2-羥基-2-甲基-1-苯基丙烷-1-酮、1-[4-(2-羥基乙氧基)苯基]-2-羥基-2-甲基-1-丙烷-1-酮等α-羥基酮;2-芐基-2-二甲胺基-1-(4-嗎啉代苯基)-丁烷-1-酮、1,2-甲基-1-[4-(甲硫基)苯基]-2-嗎啉代丙烷-1-酮等α-胺基酮;1-[4-(苯硫基)苯基]-1,2-辛二酮-2-(苯甲醯基)肟等肟酯;雙(2,4,6-三甲基苯甲醯基)苯基氧化膦、雙(2,6-二甲氧基苯甲醯基)-2,4,4-三甲基戊基氧化膦、2,4,6-三甲基苯甲醯基二苯基氧化膦等氧化膦;2-(鄰氯苯基)-4,5-二苯基咪唑二聚體、2-(鄰氯苯基)-4,5-二(甲氧基苯基)咪唑二聚體、2-(鄰氟苯基)-4,5-二苯基咪唑二聚體、2-(鄰甲氧基苯基)-4,5-二苯基咪唑二聚體、2-(對甲氧基苯基)-4,5-二苯基咪唑二聚體等2,4,5-三芳基咪唑二聚體;二苯甲酮、N,N,N’,N’-四甲基-4,4’-二氨基二苯甲酮、N,N,N’,N’-四乙基-4,4’-二氨基二苯甲酮、4-甲氧基-4’-二甲胺基二苯甲酮等二苯基酮化合物;2-乙基蒽醌、菲醌、2-第三丁基蒽醌、八甲基蒽醌、1,2-苯蒽醌、2,3-苯蒽醌、2-苯基蒽醌、2,3-二苯基蒽醌、1-氯蒽醌、2-甲基蒽醌、1,4-萘醌、9,10-菲醌、2-甲基-1,4-萘醌、2,3-二甲基蒽醌等醌化合物;安息香甲醚、安息香乙醚、安息香苯醚等安息香醚;安息香、甲基安息香、乙基安息香等安息香化合物;苄基二甲基縮酮等芐基化合物;9-苯吖啶、1,7-雙(9,9’-吖啶基庚烷)等吖啶化合物;N-苯甘胺酸、香豆素等。Examples of photoradical polymerization initiators include benzoin ketals such as 2,2-dimethoxy-1,2-diphenylethan-1-one; 1-hydroxycyclohexylphenyl Methanone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1- α-hydroxy ketones such as propan-1-one; 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butan-1-one, 1,2-methyl-1 -[4-(methylthio)phenyl]-2-morpholinopropan-1-one and other α-amino ketones; 1-[4-(phenylthio)phenyl]-1,2-octanedi Keto-2-(benzoyl)oxime and other oxime esters; bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, bis(2,6-dimethoxybenzoyl) )-2,4,4-trimethylpentylphosphine oxide, 2,4,6-trimethylbenzoyldiphenylphosphine oxide and other phosphine oxides; 2-(o-chlorophenyl)-4,5 -Diphenylimidazole dimer, 2-(o-chlorophenyl)-4,5-bis(methoxyphenyl)imidazole dimer, 2-(o-fluorophenyl)-4,5-diphenyl imidazole dimer, 2-(o-methoxyphenyl)-4,5-diphenylimidazole dimer, 2-(p-methoxyphenyl)-4,5-diphenylimidazole dimer 2,4,5-triaryl imidazole dimer; benzophenone, N,N,N',N'-tetramethyl-4,4'-diaminobenzophenone, N,N, Benzophenone compounds such as N',N'-tetraethyl-4,4'-diaminobenzophenone and 4-methoxy-4'-dimethylaminobenzophenone; 2-ethyl Anthraquinone, phenanthrenequinone, 2-tert-butylanthraquinone, octamethylanthraquinone, 1,2-benzoanthraquinone, 2,3-benzoanthraquinone, 2-phenylanthraquinone, 2,3-diphenyl Baseanthraquinone, 1-chloroanthraquinone, 2-methylanthraquinone, 1,4-naphthoquinone, 9,10-phenanthrenequinone, 2-methyl-1,4-naphthoquinone, 2,3-dimethyl Quinone compounds such as anthraquinone; benzoin ethers such as benzoin methyl ether, benzoin ethyl ether, and benzoin phenyl ether; benzoin compounds such as benzoin, methyl benzoin, and ethyl benzoin; benzyl compounds such as benzyl dimethyl ketal; 9-benzoacridine , 1,7-bis(9,9'-acridylheptane) and other acridine compounds; N-phenylglycine, coumarin, etc.

第1光聚合起始劑及第2光聚合起始劑,能夠從該等光聚合起始劑中,選擇紫外線區域的最大吸收波長不同之任意者。第1光聚合起始劑與第2光聚合起始劑的組合,例如,可以係在220nm以上且小於300nm的區域具有最大吸收波長之光聚合起始劑,和在300nm以上且400nm以下的區域具有最大吸收波長之光聚合起始劑的組合。The 1st photoinitiator and the 2nd photoinitiator can select any one which differs in the maximum absorption wavelength of an ultraviolet region from these photoinitiators. The combination of the first photopolymerization initiator and the second photopolymerization initiator can be, for example, a photopolymerization initiator having a maximum absorption wavelength in the region of 220 nm or more and less than 300 nm, and a photopolymerization initiator in the region of 300 nm or more and 400 nm or less. A combination of photopolymerization initiators having a maximum absorption wavelength.

紫外線固化型黏著劑中的光聚合起始劑(第1光聚合起始劑、第2光聚合起始劑等的總量)的含量相對於(甲基)丙烯酸系樹脂A的總量100質量份為1.5質量份以上,亦可以為1.7質量份以上、2.0質量份以上、2.3質量份以上或2.5質量份以上。若光聚合起始劑的含量在這種範圍內,則即使在黏著劑層與氧接觸之情況下,對黏著劑層照射紫外線之後,能夠使黏著劑層的相對於接著劑層的黏著力充分降低,具有難以引起拾取不良之傾向。紫外線固化型黏著劑中的光聚合起始劑的含量相對於(甲基)丙烯酸系樹脂A的總量100質量份,可以為10質量份以下、7質量份以下或5質量份以下。若光聚合起始劑的含量在這種範圍內,則具有能夠防止對接著劑層的污染(光聚合起始劑向接著劑層的轉印)之傾向。The content of the photopolymerization initiator (the total amount of the first photopolymerization initiator, the second photopolymerization initiator, etc.) in the ultraviolet curable adhesive relative to the total amount of (meth)acrylic resin A 100 mass The part is 1.5 parts by mass or more, and may be 1.7 parts by mass or more, 2.0 parts by mass or more, 2.3 parts by mass or more, or 2.5 parts by mass or more. If the content of the photopolymerization initiator is within this range, even when the adhesive layer is in contact with oxygen, the adhesive force of the adhesive layer with respect to the adhesive layer can be made sufficient after irradiating the adhesive layer with ultraviolet rays. It tends to be less likely to cause pick-up failure. The content of the photopolymerization initiator in the ultraviolet curable adhesive may be 10 parts by mass or less, 7 parts by mass or less, or 5 parts by mass or less with respect to 100 parts by mass of the total amount of (meth)acrylic resin A. When content of a photoinitiator exists in such a range, it exists in the tendency which can prevent the contamination (transfer of a photoinitiator to an adhesive layer) to an adhesive layer.

紫外線固化型黏著劑可以包含其他成分。作為其他成分,例如,可以舉出除了具有可鏈聚合之官能基之(甲基)丙烯酸系樹脂以外的樹脂(丙烯酸單體或寡聚物、胺基甲酸酯單體或寡聚物等)、黏著性賦予劑(增黏劑等)、抗靜電性賦予劑、填充劑(有機填充劑、無機填充劑等)等。從容易獲得本發明發揮之效果之觀點而言,紫外線固化型黏著劑不包含增感劑為較佳。UV-curable adhesives may contain other ingredients. As other components, for example, resins other than (meth)acrylic resins (acrylic monomers or oligomers, urethane monomers or oligomers, etc.) , Adhesive imparting agent (tackifier, etc.), antistatic imparting agent, filler (organic filler, inorganic filler, etc.), etc. From the viewpoint of easily obtaining the effect exerted by the present invention, it is preferable that the ultraviolet curable adhesive does not contain a sensitizer.

黏著劑層3中所包含之紫外線固化型黏著劑層可以與接著劑層5接觸而設置。黏著劑層3可以係由紫外線固化型黏著劑層組成之單層結構(亦即,由紫外線固化型黏著劑組成者)。另一方面,黏著劑層3只要設置成紫外線固化型黏著劑層與接著劑層5接觸,則可以係由紫外線固化型黏著劑層和1個以上的除了紫外線固化型黏著劑層以外的層構成之多層結構。除了紫外線固化型黏著劑層以外的層可以係由紫外線非固化型黏著劑組成之層,或由與構成紫外線固化型黏著劑層之紫外線固化型黏著劑不同之紫外線固化型黏著劑(以下,有時稱為“其他紫外線固化型黏著劑”。)組成之層。紫外線非固化型黏著劑及其他紫外線固化型黏著劑可以使用本領域通常使用之黏著劑。其他紫外線固化型黏著劑可以係包含在上述說明之(甲基)丙烯酸系樹脂A(包含至少一部分藉由交聯劑而交聯之(甲基)丙烯酸系樹脂A)、光聚合起始劑等者,亦可以係不包含者,亦可以係不包含者。The ultraviolet curable adhesive layer included in the adhesive layer 3 can be provided in contact with the adhesive layer 5 . The adhesive layer 3 may be a single-layer structure composed of a UV-curable adhesive layer (ie, composed of a UV-curable adhesive). On the other hand, as long as the adhesive layer 3 is provided so that the ultraviolet curable adhesive layer is in contact with the adhesive layer 5, it may be composed of an ultraviolet curable adhesive layer and one or more layers other than the ultraviolet curable adhesive layer. The multi-layer structure. The layer other than the ultraviolet curable adhesive layer may be a layer composed of an ultraviolet non-curable adhesive, or an ultraviolet curable adhesive different from the ultraviolet curable adhesive constituting the ultraviolet curable adhesive layer (hereinafter referred to as Sometimes referred to as "other UV-curable adhesives".) The composition layer. As the ultraviolet non-curable adhesive and other ultraviolet curable adhesives, adhesives commonly used in this field can be used. Other UV-curable adhesives can be included in the (meth)acrylic resin A described above (including at least a part of the (meth)acrylic resin A crosslinked by a crosslinking agent), photopolymerization initiators, etc. Those who are not included may also be those who are not included.

黏著劑層3(或紫外線固化型黏著劑層)的厚度只要依據擴展步驟的條件(溫度、張力等)適當設定即可,例如,可以係1~100μm,2~50μm,3~20μm或5~15μm。若黏著劑層3的厚度為1μm以上,則黏著性不易變得不充分,若為100μm以下,則在擴展時截口寬度變寬(銷上推時不發生應力鬆弛),具有拾取不易變得不充分之傾向。The thickness of the adhesive layer 3 (or ultraviolet curable adhesive layer) can be appropriately set according to the conditions (temperature, tension, etc.) 15 μm. If the thickness of the adhesive layer 3 is 1 μm or more, the adhesiveness is less likely to become insufficient, and if it is 100 μm or less, the kerf width becomes wider during expansion (no stress relaxation occurs when the pin is pushed up), and pick-up becomes less likely. Inadequate tendency.

在黏著劑層3係由紫外線固化型黏著劑層組成之單層結構(黏著劑層3由紫外線固化型黏著劑組成)之情況下,黏著劑層3形成於基材層1上。作為黏著劑層3的形成方法,能夠採用公知的方法。例如,可以藉由雙層擠壓法形成基材層1與黏著劑層3的積層體,亦可以製備紫外線固化型黏著劑的清漆(黏著劑層形成用清漆),將其塗敷於基材層1的表面上,或者在被脫模處理之膜上形成黏著劑層3,將其轉印到基材層1上。In the case where the adhesive layer 3 is a single-layer structure composed of an ultraviolet curable adhesive layer (the adhesive layer 3 is composed of an ultraviolet curable adhesive), the adhesive layer 3 is formed on the base material layer 1 . As a method for forming the adhesive layer 3 , known methods can be employed. For example, a laminate of the substrate layer 1 and the adhesive layer 3 can be formed by double-layer extrusion, or a varnish (varnish for forming an adhesive layer) of an ultraviolet-curable adhesive can be prepared and applied to the substrate. The adhesive layer 3 is formed on the surface of the layer 1, or on the film subjected to mold release treatment, and is transferred to the base material layer 1.

紫外線固化型黏著劑的清漆(黏著劑層形成用清漆)可以係能夠溶解(甲基)丙烯酸系樹脂A、光聚合起始劑及交聯劑之有機溶劑,且藉由加熱而揮發者。作為有機溶劑的具體例,可以舉出甲苯、二甲苯、均三甲苯、異丙苯、對繖花烴等芳香族烴;四氫呋喃、1,4-二㗁烷等環狀醚;甲醇、乙醇、異丙醇、丁醇、乙二醇、丙二醇等醇;丙酮、甲乙酮、甲基異丁基酮、環己酮、4-羥基-4-甲基-2-戊酮等酮;乙酸甲酯、乙酸乙酯、乙酸丁酯、乳酸甲酯、乳酸乙酯、γ-丁內酯等酯;伸乙基碳酸酯、伸丙基碳酸酯等碳酸酯;乙二醇單甲醚、乙二醇單乙醚、乙二醇單丁醚、乙二醇二甲醚、乙二醇二乙醚、丙二醇單甲醚、丙二醇單乙醚、丙二醇二甲醚、丙二醇二乙醚、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單丁醚、二乙二醇二甲醚、二乙二醇二乙醚等多元醇烷基醚;乙二醇單甲醚乙酸酯、乙二醇單乙醚乙酸酯、乙二醇單丁醚乙酸酯、丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、二乙二醇單甲醚乙酸酯、二乙二醇單乙醚乙酸酯等多元醇烷基醚乙酸酯;N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、N-甲基-2-吡咯啶酮等醯胺等。The varnish of the ultraviolet curable adhesive (varnish for forming an adhesive layer) may be an organic solvent capable of dissolving the (meth)acrylic resin A, a photopolymerization initiator, and a crosslinking agent, and may be volatilized by heating. Specific examples of organic solvents include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-cymene; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; methanol, ethanol, Isopropanol, butanol, ethylene glycol, propylene glycol and other alcohols; acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone and other ketones; methyl acetate, Ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, γ-butyrolactone and other esters; ethylene carbonate, propylidene carbonate and other carbonates; ethylene glycol monomethyl ether, ethylene glycol mono Diethyl ether, ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol monomethyl ether, diethyl ether Glycol monoethyl ether, diethylene glycol monobutyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether and other polyol alkyl ethers; ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether ester, ethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, etc. Alcohol alkyl ether acetate; Amides such as N,N-dimethylformamide, N,N-dimethylacetamide, N-methyl-2-pyrrolidone, etc.

在該等中,從溶解性及沸點的觀點考慮,有機溶劑例如可以係選自由甲苯、甲醇、乙醇、異丙醇、丙酮、甲乙酮、甲基異丁基酮、環己酮、乙酸甲酯、乙酸乙酯、乙酸丁酯、乙二醇單甲醚、乙二醇單乙醚、丙二醇單甲醚、丙二醇單乙醚、二乙二醇二甲醚、乙二醇單甲醚乙酸酯、丙二醇單甲醚乙酸酯及N,N-二甲基乙醯胺組成的組中的至少一種。清漆的固體成分濃度通常為10~60質量%。Among them, from the viewpoint of solubility and boiling point, the organic solvent can be selected from, for example, toluene, methanol, ethanol, isopropanol, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, methyl acetate, Ethyl acetate, butyl acetate, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, diethylene glycol dimethyl ether, ethylene glycol monomethyl ether acetate, propylene glycol monomethyl ether At least one selected from the group consisting of methyl ether acetate and N,N-dimethylacetamide. The solid content concentration of the varnish is usually 10 to 60% by mass.

黏著劑層3(或紫外線固化型黏著劑層)的相對於接著劑層5的黏著力可以為6N/25mm以上、6.5N/25mm以上或7N/25mm以上。該黏著力係在溫度23℃下以剝離角度30°及剝離速度600mm/分鐘的條件下測量之30°剝離強度。圖2係示意性地表示測量黏著劑層的相對於接著劑層的30°剝離強度之狀態的剖面圖。如圖2所示,在支撐板80上固定測量試樣(寬度25mm×長度100mm)的接著劑層5之狀態下測量黏著劑層3的30°剝離強度。若黏著劑層3的相對於接著劑層5的黏著力(30°剝離強度)在這種範圍,則具有能夠在從黏著劑層上拾取附有接著劑片之晶片之前(在(F)步驟之前),抑制在附有接著劑片之晶片的端部與黏著劑層之間發生剝離之傾向。黏著劑層3的相對於接著劑層5的黏著力例如可以為15N/25mm以下、13N/25mm以下或12N/25mm以下。The adhesive force of the adhesive layer 3 (or ultraviolet curable adhesive layer) with respect to the adhesive layer 5 may be 6 N/25 mm or more, 6.5 N/25 mm or more, or 7 N/25 mm or more. The adhesive force is the 30° peel strength measured under the conditions of a peel angle of 30° and a peel speed of 600mm/min at a temperature of 23°C. Fig. 2 is a cross-sectional view schematically showing a state of measuring the 30° peel strength of the adhesive layer with respect to the adhesive layer. As shown in FIG. 2 , the 30° peel strength of the adhesive layer 3 was measured with the adhesive layer 5 of the measurement sample (width 25 mm×length 100 mm) fixed on the support plate 80 . If the adhesive force (30° peel strength) of the adhesive layer 3 relative to the adhesive layer 5 is in this range, it is possible to pick up the wafer with the adhesive sheet attached from the adhesive layer (in step (F) Before), the tendency of peeling between the end of the wafer with the adhesive sheet and the adhesive layer is suppressed. The adhesive force of the adhesive layer 3 with respect to the adhesive layer 5 can be 15 N/25 mm or less, 13 N/25 mm or less, or 12 N/25 mm or less, for example.

黏著劑層3的相對於接著劑層5的黏著力變得越低,則具有在從黏著劑層上拾取附有接著劑片之晶片之前(在(F)步驟之前)容易在附有接著劑片之晶片的端部與黏著劑層之間發生剝離之傾向。因此,黏著劑層3的相對於接著劑層5的黏著力變得越低,則可稱為容易顯現基於本發明的構成之效果。The lower the adhesive force of the adhesive layer 3 with respect to the adhesive layer 5 becomes, the easier it is to pick up the wafer with the adhesive sheet from the adhesive layer (before (F) step). The tendency to delaminate between the end of the chip and the adhesive layer. Therefore, it can be said that the lower the adhesive force of the adhesive layer 3 with respect to the adhesive layer 5 is, the easier it is to exhibit the effect of the configuration of the present invention.

對黏著劑層3照射照度70mW/cm 2及照射量150mJ/cm 2的紫外線(主波長:365nm)之後,照射紫外線後的黏著劑層3(或紫外線固化型黏著劑層)的相對於接著劑層5的黏著力可以為1.2N/25mm以下、1.0N/25mm以下或0.9N/25mm以下。若照射紫外線後的黏著劑層3的相對於接著劑層5的黏著力在這種範圍內,則能夠實現優異的拾取性。照射紫外線後的黏著劑層3的相對於接著劑層5的黏著力可以為0.3N/25mm以上、0.4N/25mm以上或0.5N/25mm以上。另外,該黏著力與上述相同,係在溫度23℃下,在剝離角度30°及剝離速度600mm/分鐘的條件下測量之30°剝離強度(參閱圖2)。 After irradiating the adhesive layer 3 with ultraviolet rays (main wavelength: 365nm) with an illuminance of 70mW/cm 2 and an irradiation dose of 150mJ/cm 2 , the relative adhesive strength of the adhesive layer 3 (or UV-curable adhesive layer) after irradiation with ultraviolet rays The adhesion of layer 5 may be 1.2 N/25mm or less, 1.0 N/25mm or less, or 0.9 N/25mm or less. When the adhesive force with respect to the adhesive layer 5 of the adhesive layer 3 after ultraviolet-ray irradiation exists in this range, excellent pick-up property can be realizable. The adhesive force of the adhesive layer 3 after ultraviolet irradiation to the adhesive layer 5 may be 0.3 N/25 mm or more, 0.4 N/25 mm or more, or 0.5 N/25 mm or more. In addition, the adhesive force is the same as above, which is the 30° peel strength measured at a temperature of 23°C, a peel angle of 30° and a peel speed of 600mm/min (see Figure 2).

在接觸氧之條件下,對黏著劑層3照射照度70mW/cm 2及照射量150mJ/cm 2的紫外線(主波長:365nm)之後的照射紫外線後的黏著劑層3(或紫外線固化型黏著劑層)的相對於接著劑層5的黏著力可以為4.0N/25mm以下、3.8N/25mm以下或3.5N/25mm以下。若照射紫外線後的黏著劑層3的相對於接著劑層5的黏著力在這種範圍內,則能夠實現優異的拾取性。照射紫外線後的黏著劑層3的相對於接著劑層5的黏著力可以為0.5N/25mm以上、1.0N/25mm以上、2.0N/25mm以上或2.5N/25mm以上。另外,該黏著力與上述相同,係在溫度23℃下,在剝離角度30°及剝離速度600mm/分鐘的條件下測量之30°剝離強度(參閱圖2)。 Adhesive layer 3 after irradiating ultraviolet rays (main wavelength: 365nm) after irradiating the adhesive layer 3 with an illumination intensity of 70mW/cm 2 and an irradiation dose of 150mJ/cm 2 (or ultraviolet curable adhesive) under the condition of exposure to oxygen layer) with respect to the adhesive layer 5 may be 4.0N/25mm or less, 3.8N/25mm or less, or 3.5N/25mm or less. When the adhesive force with respect to the adhesive layer 5 of the adhesive layer 3 after ultraviolet-ray irradiation exists in this range, excellent pick-up property can be realizable. The adhesive force of the adhesive layer 3 after ultraviolet irradiation to the adhesive layer 5 may be 0.5 N/25 mm or more, 1.0 N/25 mm or more, 2.0 N/25 mm or more, or 2.5 N/25 mm or more. In addition, the adhesive force is the same as above, which is the 30° peel strength measured at a temperature of 23°C, a peel angle of 30° and a peel speed of 600mm/min (see Figure 2).

在本實施形態中,例如,能夠藉由調整(甲基)丙烯酸系樹脂A中的可鏈聚合之官能基的含量(導入官能基之化合物的含量)、用於交聯(甲基)丙烯酸系樹脂A之交聯劑的含量等,或者,例如藉由添加除了具有可鏈聚合之官能基之(甲基)丙烯酸系樹脂以外的樹脂(丙烯酸單體或寡聚物、胺基甲酸酯單體或寡聚物等)、黏著性賦予劑(增黏劑等)等,來調整黏著劑層3的相對於接著劑層5的黏著力及照射紫外線後的黏著劑層3的相對於接著劑層5的黏著力。In this embodiment, for example, by adjusting the content of chain-polymerizable functional groups in (meth)acrylic resin A (the content of functional group-introducing compounds), it can be used for crosslinking (meth)acrylic resins. The content of the crosslinking agent of resin A, etc., or, for example, by adding resins other than (meth)acrylic resins having chain-polymerizable functional groups (acrylic monomers or oligomers, urethane monomers, etc.) body or oligomer, etc.), adhesiveness imparting agent (tackifier, etc.) Adhesion of layer 5.

<基材層> 基材層1能夠使用公知的聚合物片或膜,只要係能夠在低溫條件下實施擴展步驟者,則並沒有特別限制。作為基材層1的具體例,可以舉出結晶性聚丙烯、無定形聚丙、高密度聚乙烯、中密度聚乙烯、低密度聚乙烯、超低密度聚乙烯、低密度直鏈聚乙烯、聚丁烯、聚甲基戊烯等聚烯烴、乙烯-乙酸乙烯基共聚物、離聚物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(無規、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚胺基甲酸酯、聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯等聚酯、聚碳酸酯、聚醯亞胺、聚醚醚酮、聚醯亞胺、聚醚醯亞胺、聚醯胺、全芳香族聚醯胺、聚苯硫醚、芳醯胺(紙)、玻璃、玻璃布、氟樹脂、聚氯乙烯、聚偏二氯乙烯、纖維素系樹脂、矽酮樹脂或在該等中混合了塑化劑之混合物,或者藉由電子束照射而實施交聯之固化物。 <Substrate layer> A known polymer sheet or film can be used for the base material layer 1, and there is no particular limitation as long as it can perform the expansion step under low temperature conditions. Specific examples of the substrate layer 1 include crystalline polypropylene, amorphous polypropylene, high-density polyethylene, medium-density polyethylene, low-density polyethylene, ultra-low-density polyethylene, low-density linear polyethylene, polypropylene Polyolefins such as butene and polymethylpentene, ethylene-vinyl acetate copolymers, ionomer resins, ethylene-(meth)acrylic acid copolymers, ethylene-(meth)acrylate (random, alternating) copolymers ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate and other polyesters, polycarbonate, polyamide Amine, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylene sulfide, aramid (paper), glass, glass cloth, fluororesin, polyamide Vinyl chloride, polyvinylidene chloride, cellulose-based resin, silicone resin, or a mixture of these with a plasticizer, or a cured product crosslinked by electron beam irradiation.

基材層1具有以選自由聚乙烯、聚丙烯、聚乙烯-聚丙烯無規共聚物及聚乙烯-聚丙烯嵌段共聚物組成的組中的至少一種樹脂作為主成分之表面,亦可以係該表面與黏著劑層3接觸者。該等樹脂從楊氏模量、應力鬆弛性、熔點等特性、價格方面、使用後的廢料回收等觀點考慮,亦可以成為良好的基材。基材層1可以係單層,亦可以根據需要具有由不同的材質組成之層積層而得之多層結構。從控制與黏著劑層3的黏附性之觀點考慮,基材層1可以對其表面實施消光處理、電暈處理等表面粗糙化處理。The substrate layer 1 has a surface mainly composed of at least one resin selected from the group consisting of polyethylene, polypropylene, polyethylene-polypropylene random copolymer, and polyethylene-polypropylene block copolymer, and may be This surface is in contact with the adhesive layer 3 . These resins can also be good substrates from the viewpoints of properties such as Young's modulus, stress relaxation, and melting point, price, and recycling of waste after use. The substrate layer 1 may be a single layer, or may have a multi-layer structure obtained by laminating layers composed of different materials as required. From the viewpoint of controlling the adhesiveness with the adhesive layer 3, the surface of the substrate layer 1 may be subjected to surface roughening treatments such as matting treatment and corona treatment.

基材層1的厚度例如可以為10~200μm或20~170μm。The thickness of the base layer 1 may be, for example, 10 to 200 μm or 20 to 170 μm.

<接著劑層> 在接著劑層5中,能夠應用構成公知的晶粒接合膜之接著劑組成物。具體而言,構成接著劑層5之接著劑組成物可以包含環氧樹脂、環氧樹脂固化劑及含有反應性基之(甲基)丙烯酸共聚物。包含接著劑層5之接著劑組成物可以進一步包含固化促進劑及填充劑。依據包含該等成分之接著劑層5,存在具有如下特徵之傾向:晶片/基板之間、晶片/晶片之間的接著性優異,又,亦能夠賦予電極植入性、導線植入性等,並且在晶粒接合步驟中,能夠在低溫下接合,可在短時間內得到優異的固化,用密封劑成形後具有優異的可靠性等。 <Adhesive layer> For the adhesive layer 5 , an adhesive composition constituting a known die bonding film can be applied. Specifically, the adhesive composition constituting the adhesive layer 5 may include an epoxy resin, an epoxy resin curing agent, and a reactive group-containing (meth)acrylic acid copolymer. The adhesive composition including the adhesive layer 5 may further include a curing accelerator and a filler. According to the adhesive layer 5 containing these components, there is a tendency to have the following characteristics: the adhesiveness between the chip/substrate and between the chip/chip is excellent, and it can also impart electrode implantability, wire implantability, etc., In addition, in the die bonding step, it is possible to bond at a low temperature, to obtain excellent curing in a short time, and to have excellent reliability after molding with a sealant, etc.

作為環氧樹脂,例如,可以舉出雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、脂環式環氧樹脂、脂肪族鏈狀環氧樹脂、苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、雙酚A酚醛清漆型環氧樹脂、雙酚的二縮水甘油醚化物、萘二醇的二縮水甘油醚化物、酚類二縮水甘油醚化物、醇類的二縮水甘油醚化物及該等烷基取代體、鹵化物、加氫物等二官能環氧樹脂、酚醛清漆型環氧樹脂等。又,可以應用多官能環氧樹脂、含雜環環氧樹脂等通常已知的其他環氧樹脂。另外,在不損害特性的範圍內,除了環氧樹脂以外的成分,還可以作為雜質而包含。Examples of epoxy resins include bisphenol A epoxy resins, bisphenol F epoxy resins, bisphenol S epoxy resins, alicyclic epoxy resins, aliphatic chain epoxy resins, phenol Novolak-type epoxy resin, cresol novolac-type epoxy resin, bisphenol A novolac-type epoxy resin, bisphenol diglycidyl ether compound, naphthalene diol diglycidyl ether compound, phenolic diglycidyl Ether compounds, diglycidyl ether compounds of alcohols and such alkyl substituted products, halides, hydrogenated products and other difunctional epoxy resins, novolac epoxy resins, etc. In addition, other commonly known epoxy resins such as polyfunctional epoxy resins and heterocyclic ring-containing epoxy resins can be used. In addition, components other than the epoxy resin may be included as impurities within the range not impairing the properties.

作為環氧樹脂固化劑,例如,可以舉出能夠在沒有觸媒或在氧觸媒的存在下,使酚化合物和2價的連結基亦即二甲苯化合物反應而獲得之酚樹脂等。作為製造酚樹脂時所使用之酚化合物,例如,可以舉出苯酚、鄰甲酚、間甲酚、對甲酚、鄰乙基苯酚、對乙基苯酚、鄰正丙基苯酚、間正丙基苯酚、對正丙基苯酚、鄰異丙基苯酚、間異丙基苯酚、對異丙基苯酚、鄰正丁基苯酚、間正丁基苯酚、對正丁基苯酚、鄰異丁基苯酚、間異丁基苯酚、對異丁基苯酚、辛基苯酚、壬基苯酚、2,4-二甲苯酚、2,6-二甲苯酚、3,5-二甲苯酚、2,4,6-三甲基苯酚、間苯二酚、鄰苯二酚、氫醌、4-甲氧基苯酚、鄰苯基苯酚、間苯基苯酚、對苯基苯酚、對環己基苯酚、鄰烯丙基苯酚、對烯丙基苯酚、鄰芐基苯酚、對芐基苯酚、鄰氯苯酚、對氯苯酚、鄰溴苯酚、對溴苯酚、鄰碘苯酚、對碘苯酚、鄰氟苯酚、間氟苯酚、對氟苯酚等。作為在製造酚樹脂時所使用之2價的連結基亦即二甲苯化合物,能夠使用以下示出之二甲苯二鹵化物、二甲苯二乙二醇及其衍生物。亦即,作為二甲苯化合物的具體例,可以舉出α,α’-二氯-對二甲苯、α,α’-二氯-間二甲苯、α,α’-二氯-鄰二甲苯、α,α’-二溴-對二甲苯、α,α’-二溴-間二甲苯、α,α’-二溴-鄰二甲苯、α,α’-二碘-對二甲苯、α,α’-二碘-間二甲苯、α,α’-二碘-鄰二甲苯、α,α’-二羥基-對二甲苯、α,α’-二羥基-間二甲苯、α,α’-二羥基-鄰二甲苯、α,α’-二甲氧基-對二甲苯、α,α’-二甲氧基-間二甲苯、α,α’-二甲氧基-鄰二甲苯、α,α’-二乙氧基-對二甲苯、α,α’-二乙氧基-間二甲苯、α,α’-二乙氧基-鄰二甲苯、α,α’-二-正丙氧基-對二甲苯、α,α’-二正丙氧基-間二甲苯、α,α’-二正丙氧基-鄰二甲苯、α,α’-二異丙氧基-對二甲苯、α,α’-二異丙氧基-間二甲苯、α,α’-二異丙氧基-鄰二甲苯、α,α’-二正丁氧基-對二甲苯、α,α’-二正丁氧基-間二甲苯、α,α’-二正丁氧基-鄰二甲苯、α,α’-二異丁氧基-對二甲苯、α,α’-二異丁氧基-間二甲苯、α,α’-二異丁氧基-鄰二甲苯、α,α’-二第三丁氧基-對二甲苯、α,α’-二第三丁氧基-間二甲苯、α,α’-二第三丁氧基-鄰二甲苯等。Examples of epoxy resin curing agents include phenol resins obtained by reacting a phenol compound with a divalent linking group, ie, a xylene compound, in the absence of a catalyst or in the presence of an oxygen catalyst. Examples of the phenolic compound used in the production of phenol resins include phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, p-ethylphenol, o-n-propylphenol, m-n-propyl Phenol, p-n-propylphenol, o-isopropylphenol, m-isopropylphenol, p-isopropylphenol, o-n-butylphenol, m-n-butylphenol, p-n-butylphenol, o-isobutylphenol, m-isobutylphenol, p-isobutylphenol, octylphenol, nonylphenol, 2,4-xylenol, 2,6-xylenol, 3,5-xylenol, 2,4,6- Trimethylphenol, resorcinol, catechol, hydroquinone, 4-methoxyphenol, o-phenylphenol, m-phenylphenol, p-phenylphenol, p-cyclohexylphenol, o-allylphenol , p-allylphenol, o-benzylphenol, p-benzylphenol, o-chlorophenol, p-chlorophenol, o-bromophenol, p-bromophenol, o-iodophenol, p-iodophenol, o-fluorophenol, m-fluorophenol, p- Fluorophenol, etc. As a xylene compound which is a divalent coupling group used in the production of a phenol resin, xylene dihalides, xylene diethylene glycol, and derivatives thereof shown below can be used. That is, specific examples of xylene compounds include α,α'-dichloro-p-xylene, α,α'-dichloro-m-xylene, α,α'-dichloro-o-xylene, α,α'-Dibromo-p-xylene, α,α'-Dibromo-m-xylene, α,α'-Dibromo-o-xylene, α,α'-Diiodo-p-xylene, α, α'-Diiodo-m-xylene, α,α'-Diiodo-o-xylene, α,α'-Dihydroxy-p-xylene, α,α'-Dihydroxy-m-xylene, α,α' -dihydroxy-o-xylene, α,α'-dimethoxy-p-xylene, α,α'-dimethoxy-m-xylene, α,α'-dimethoxy-o-xylene, α,α'-diethoxy-p-xylene, α,α'-diethoxy-m-xylene, α,α'-diethoxy-o-xylene, α,α'-di-n-xylene Propoxy-p-xylene, α,α'-di-n-propoxy-m-xylene, α,α'-di-n-propoxy-o-xylene, α,α'-diisopropoxy-p- Xylene, α,α'-Diisopropoxy-m-xylene, α,α'-Diisopropoxy-o-xylene, α,α'-Di-n-butoxy-p-xylene, α, α'-Di-n-butoxy-m-xylene, α,α'-Di-n-butoxy-o-xylene, α,α'-Diisobutoxy-p-xylene, α,α'-Diiso Butoxy-m-xylene, α,α'-diisobutoxy-o-xylene, α,α'-di-tert-butoxy-p-xylene, α,α'-di-tert-butoxy - m-xylene, α,α'-di-tert-butoxy-o-xylene, etc.

在使酚化合物與二甲苯化合物進行反應時,能夠藉由使用鹽酸、硫酸、磷酸、聚磷酸等無機酸類;二甲基硫酸、二乙基硫酸、對甲苯磺酸、甲磺酸、乙烷磺酸等有機羧酸類;三氟甲磺酸等超強酸類;烷烴磺酸型離子交換樹脂等強酸性離子交換樹脂類;全氟烷烴磺酸型離子交換樹脂等超強酸性離子交換樹脂類(產品名稱:納菲,Nafion,Du Pont de Nemours, Inc.製造,“Nafion”為註冊商標);天然和合成沸石類;及活性白土(酸性白土)類等酸性觸媒,在50~250℃下,作為原料的二甲苯化合物實質上消失,並且使其反應直至反應組成成為恆定而獲得酚樹脂。反應時間能夠依據原料及反應溫度來適當設定,例如,能夠設為1~15小時左右,能夠藉由GPC(凝膠滲透層析法)等一邊跟蹤反應組成一邊進行確定。When reacting phenolic compounds with xylene compounds, inorganic acids such as hydrochloric acid, sulfuric acid, phosphoric acid, polyphosphoric acid; dimethyl sulfuric acid, diethyl sulfuric acid, p-toluenesulfonic acid, methanesulfonic acid, ethanesulfonic acid, etc. Organic carboxylic acids such as trifluoromethanesulfonic acid; superacids such as trifluoromethanesulfonic acid; strong acidic ion exchange resins such as alkanesulfonic acid ion exchange resins; Name: Nafion, Nafion, manufactured by Du Pont de Nemours, Inc., "Nafion" is a registered trademark); natural and synthetic zeolites; and acid catalysts such as activated clay (acid clay) The xylene compound as a raw material substantially disappeared, and it was made to react until the reaction composition became constant, and the phenol resin was obtained. The reaction time can be appropriately set according to the raw materials and the reaction temperature, for example, it can be set to about 1 to 15 hours, and can be determined while tracking the reaction composition by GPC (gel permeation chromatography) or the like.

含有反應性基之(甲基)丙烯酸共聚物例如可以係含有環氧基之(甲基)丙烯酸共聚物。含有環氧基之(甲基)丙烯酸共聚物可以係藉由環氧丙基(甲基)丙烯酸酯作為原料而獲得之共聚物,該環氧丙基(甲基)丙烯酸酯的量使用相對於所獲得之共聚物成為0.5~6質量%的量。若環氧丙基(甲基)丙烯酸酯的含量為0.5質量%以上,則變得容易獲得高接著力,另一方面,6質量%以下時,具有能夠抑制膠化之傾向。構成含有反應性基之(甲基)丙烯酸共聚物的餘項之單體,例如,可以係甲基丙烯酸甲酯等具有碳數1~8的烷基之烷基(甲基)丙烯酸酯、苯乙烯、丙烯腈等。在該等中,構成含有反應性基之(甲基)丙烯酸共聚物的餘項之單體,可以係乙基(甲基)丙烯酸酯和/或(甲基)丙烯酸丁酯。混合比能夠考慮含有反應性基之(甲基)丙烯酸共聚物的Tg來進行調整。若Tg為-10℃以上,則具有能夠抑制B階段狀態下的接著劑層5的黏性變得過大的傾向,並且具有操作性優異的傾向。另外,含有環氧基之(甲基)丙烯酸共聚物的玻璃轉移溫(Tg)例如可以為30℃以下。聚合方法並沒有特別限制,例如,可以舉出珠狀聚合、溶液聚合等。作為市售的含有環氧基之(甲基)丙烯酸共聚物,例如,可以舉出HTR-860P-3(產品名稱,Nagase Chemtex Corporation製造)。The reactive group-containing (meth)acrylic copolymer may be, for example, an epoxy group-containing (meth)acrylic copolymer. The (meth)acrylic copolymer containing an epoxy group can be a copolymer obtained by using glycidyl (meth)acrylate as a raw material, and the amount of the glycidyl (meth)acrylate is used relative to The obtained copolymer becomes the quantity of 0.5-6 mass %. When the content of glycidyl (meth)acrylate is 0.5% by mass or more, it becomes easy to obtain high adhesive force, while on the other hand, when it is 6% by mass or less, gelation tends to be suppressed. The monomers constituting the remainder of the reactive group-containing (meth)acrylic acid copolymer can be, for example, methyl methacrylate and other alkyl (meth)acrylates having an alkyl group with 1 to 8 carbons, benzene Ethylene, acrylonitrile, etc. Among these, the monomer constituting the remainder of the reactive group-containing (meth)acrylic copolymer may be ethyl (meth)acrylate and/or butyl (meth)acrylate. The mixing ratio can be adjusted in consideration of Tg of the reactive group-containing (meth)acrylic copolymer. When Tg is -10 degreeC or more, it exists in the tendency which can suppress the viscosity of the adhesive bond layer 5 in a B-stage state from becoming too large, and it exists in the tendency which is excellent in handleability. In addition, the glass transition temperature (Tg) of the epoxy group-containing (meth)acrylic copolymer may be, for example, 30° C. or lower. The polymerization method is not particularly limited, and examples thereof include bead polymerization, solution polymerization, and the like. As a commercially available epoxy group containing (meth)acrylic copolymer, HTR-860P-3 (product name, the Nagase Chemtex Corporation make) is mentioned, for example.

從接著性及耐熱性的觀點考慮,含有環氧基之(甲基)丙烯酸共聚物的重量平均分子量可以為10萬以上,亦可以為30萬~300萬或50萬~200萬。若重量平均分子量為300萬以下,則能夠抑制晶片與支撐晶片之基板之間的填充性的降低。重量平均分子量係藉由凝膠滲透層析法(GPC)並使用基於標準聚苯乙烯之校準曲線之聚苯乙烯換算值。From the viewpoint of adhesiveness and heat resistance, the weight average molecular weight of the epoxy group-containing (meth)acrylic copolymer may be 100,000 or more, or 300,000 to 3 million, or 500,000 to 2 million. When the weight average molecular weight is 3 million or less, the fall of the fillability between a wafer and the substrate which supports a wafer can be suppressed. The weight average molecular weight is a polystyrene-equivalent value based on a calibration curve of standard polystyrene by gel permeation chromatography (GPC).

作為固化促進劑,例如,可以舉出第三級胺、咪唑類、四級銨鹽類等。作為固化促進劑的具體例,可以舉出2-甲基咪唑、2-乙基-4-甲基咪唑、1-氰基乙基-2-苯基咪唑、1-氰基乙基-2-苯基咪唑鎓偏苯三酸酯。Examples of the curing accelerator include tertiary amines, imidazoles, quaternary ammonium salts, and the like. Specific examples of curing accelerators include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2- Phenyl imidazolium trimellitate.

填充劑可以為無機填充劑。作為無機填充劑的具體例,可以舉出氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、氮化鋁、硼酸鋁鬚晶、氮化硼、結晶二氧化矽、無定形二氧化矽。The filler may be an inorganic filler. Specific examples of inorganic fillers include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and aluminum borate whiskers. , boron nitride, crystalline silicon dioxide, amorphous silicon dioxide.

接著劑層5的厚度例如可以為1~300μm、5~150μm或10~100μm。若接著劑層5的厚度為1μm以上,則具有接著性更優異,另一方面,若為300μm以下,則擴展時的分割性及拾取性更加優異的傾向。接著劑層5的厚度例如可以為20μm以上、30μm以上或40μm以上,亦可以為80μm以下、70μm以下或60μm以下。若接著劑層5的厚度為20μm以上,則具有如下傾向:在基於冷卻擴展的分割步驟時的收縮和熱收縮步驟時的收縮的差距容易變大,在從黏著劑層上拾取附有接著劑片之晶片之前(在(F)步驟之前),在附有接著劑片之晶片的端部與黏著劑層之間變得不易發生剝離。因此,接著劑層5的厚度越為20μm以上,越能夠使基於本發明的構成之效果容易顯現。The thickness of the adhesive layer 5 may be, for example, 1-300 μm, 5-150 μm, or 10-100 μm. When the thickness of the adhesive layer 5 is 1 μm or more, it tends to be more excellent in adhesiveness, while on the other hand, if it is 300 μm or less, it tends to be more excellent in splittability and pick-up property at the time of spreading. The thickness of the adhesive layer 5 may be, for example, 20 μm or more, 30 μm or more, or 40 μm or more, or may be 80 μm or less, 70 μm or less, or 60 μm or less. If the thickness of the adhesive layer 5 is 20 μm or more, there is a tendency that the difference between the shrinkage during the division step by cooling expansion and the shrinkage during the thermal shrinkage step becomes large, and the adhesive layer is picked up from the adhesive layer. Before the wafer with the adhesive sheet (before the step (F)), peeling becomes less likely to occur between the end of the wafer with the adhesive sheet attached and the adhesive layer. Therefore, the more the thickness of the adhesive layer 5 is 20 μm or more, the more easily the effect of the configuration of the present invention can be exhibited.

另外,接著劑層5可以係不包含熱固化性樹脂(環氧樹脂及環氧樹脂固化劑)之態樣。例如,在接著劑層5包含含有反應性基之(甲基)丙烯酸共聚物之情況下,接著劑層5可以係包含含有反應性基之(甲基)丙烯酸共聚物、固化促進劑及填充劑者。In addition, the adhesive layer 5 may not contain a thermosetting resin (epoxy resin and epoxy resin curing agent). For example, in the case where the adhesive layer 5 includes a reactive group-containing (meth)acrylic copolymer, the adhesive layer 5 may include a reactive group-containing (meth)acrylic copolymer, a curing accelerator, and a filler. By.

關於接著劑層5,可以製備接著劑組成物的清漆(接著劑層形成用清漆),並在將其塗敷於黏著劑層3的表面、或者被脫模處理之膜上,形成接著劑層5,並將其貼附於黏著劑層3。接著劑組成物的清漆(接著劑層形成用清漆)可以係能夠溶解除了填充劑以外的各成分之有機溶劑並藉由加熱而揮發者。有機溶劑的具體例能夠例示出與紫外線固化型黏著劑的清漆中的有機溶劑相同者。Regarding the adhesive layer 5, a varnish of the adhesive composition (varnish for forming an adhesive layer) can be prepared, and the adhesive layer can be formed by applying it on the surface of the adhesive layer 3 or on a film subjected to mold release treatment. 5, and attach it to the adhesive layer 3. The varnish of the adhesive composition (varnish for forming an adhesive layer) may be an organic solvent capable of dissolving components other than the filler and volatilized by heating. Specific examples of the organic solvent include the same ones as the organic solvent in the varnish of the ultraviolet curable adhesive.

[切割晶粒接合一體型膜的製造方法] 膜10例如能夠藉由如下方法來製造,該方法包括:準備積層體(切割膜)之步驟,該積層體包含由基材層1和設置於基材層1上之紫外線固化型黏著劑組成之黏著劑層3;準備晶粒接合膜之步驟,該晶粒接合膜包含接著劑層5;在切割膜的黏著劑層3上貼合晶粒接合膜中的接著劑層5之步驟。 [Manufacturing method of dicing die bonding integrated film] The film 10 can be produced, for example, by a method including: a step of preparing a laminate (cut film) including a substrate layer 1 and an ultraviolet-curable adhesive provided on the substrate layer 1. Adhesive layer 3; a step of preparing a die bonding film including an adhesive layer 5; a step of attaching the adhesive layer 5 in the die bonding film on the adhesive layer 3 of the dicing film.

[半導體裝置及其製造方法] 圖3係半導體裝置的一實施形態的示意剖面圖。圖3所示之半導體裝置100具備:基板70,在基板70的表面上積層之4個晶片S1、S2、S3、S4,基板70的表面上的電極(未圖示),與4個晶片S1、S2、S3、S4電連接之導線W1、W2、W3、W4,以及將該等進行密封之密封層50。 [Semiconductor device and manufacturing method thereof] FIG. 3 is a schematic cross-sectional view of an embodiment of a semiconductor device. The semiconductor device 100 shown in FIG. 3 has: a substrate 70, four chips S1, S2, S3, and S4 stacked on the surface of the substrate 70, electrodes (not shown) on the surface of the substrate 70, and four chips S1 , S2, S3, S4 are electrically connected wires W1, W2, W3, W4, and a sealing layer 50 for sealing them.

基板70例如可以係有機基板,亦可以係引線框等金屬基板。從抑制半導體裝置100的翹曲之觀點考慮,基板70的厚度例如可以為70~140μm,亦可以為80~100μm。The substrate 70 may be, for example, an organic substrate, or a metal substrate such as a lead frame. From the viewpoint of suppressing warpage of the semiconductor device 100, the thickness of the substrate 70 may be, for example, 70 to 140 μm, or may be 80 to 100 μm.

4個晶片S1、S2、S3、S4可以經由接著劑片5P的固化物5C來積層。平面觀察時的晶片S1、S2、S3、S4的形狀例如係正方形或長方形。晶片S1、S2、S3、S4的面積可以為30~250mm 2,亦可以為40~200mm 2或50~150mm 2。晶片S1、S2、S3、S4的一邊的長度,例如為6.0mm以上,可以為7.0~18mm或8.0~15mm。另外,4個晶片S1、S2、S3、S4的一邊的長度可以相同,亦可以互不相同。又,4個晶片S1、S2、S3、S4可以係尺寸較小者。亦即,晶片S1、S2、S3、S4的面積例如可以小於30mm 2,亦可以為0.1~20mm 2或1~15mm 2The four wafers S1, S2, S3, and S4 can be laminated via the cured product 5C of the adhesive tablet 5P. The shapes of the wafers S1 , S2 , S3 , and S4 in plan view are, for example, square or rectangular. The areas of the chips S1, S2, S3, and S4 may be 30-250 mm 2 , or 40-200 mm 2 or 50-150 mm 2 . The length of one side of the wafers S1, S2, S3, and S4 is, for example, 6.0 mm or more, and may be 7.0 to 18 mm or 8.0 to 15 mm. In addition, the lengths of one side of the four chips S1, S2, S3, and S4 may be the same or different from each other. Also, the four chips S1, S2, S3, and S4 may be smaller in size. That is, the areas of the chips S1 , S2 , S3 , and S4 can be, for example, less than 30 mm 2 , or can be 0.1-20 mm 2 or 1-15 mm 2 .

晶片S1、S2、S3、S4的厚度例如為10~200μm,亦可以為20~100μm。另外,4個晶片S1、S2、S3、S4的厚度可以相同,亦可以互不相同。又,晶片的厚度例如可以為50μm以下、40μm以下、30μm以下或20μm以下,亦可以為10μm以上或15μm以上。晶片的厚度越薄,則具有越容易引起晶片的翹曲之傾向,具有在從黏著劑層上拾取附有接著劑片之晶片之前(在(F)步驟之前),容易在附有接著劑片之晶片的端部與黏著劑層之間發生剝離之傾向。因此,晶片的厚度越薄,則越能夠使基於本發明的構成的效果越容易顯現。The thickness of the wafers S1, S2, S3, and S4 is, for example, 10 to 200 μm, or may be 20 to 100 μm. In addition, the thicknesses of the four chips S1, S2, S3, and S4 may be the same or different from each other. Also, the thickness of the wafer may be, for example, 50 μm or less, 40 μm or less, 30 μm or less, or 20 μm or less, or may be 10 μm or more or 15 μm or more. The thinner the wafer is, the more likely it is to cause warping of the wafer, and before the wafer with the adhesive sheet is picked up from the adhesive layer (before step (F)), it is easier to remove the wafer with the adhesive sheet attached. The tendency to delaminate between the end of the wafer and the adhesive layer. Therefore, the thinner the wafer is, the more easily the effect of the configuration of the present invention can be exhibited.

半導體裝置100的製造方法具備以下步驟。 (A)準備上述切割晶粒接合一體型膜之步驟(準備步驟) (B)切割晶圓之步驟(切割步驟) (C)對前述切割晶粒接合一體型膜的前述接著劑層貼附前述晶圓之步驟(晶圓貼附步驟) (D)藉由在冷卻條件下擴展基材層而獲得晶圓及接著劑層單片化而成之附有接著劑片之晶片之步驟(冷卻擴展步驟) (E)藉由對黏著劑層照射紫外線而降低黏著劑層的相對於附有接著劑片之晶片的黏著力之步驟(紫外線照射步驟) (F)從黏著劑層上拾取附有接著劑片之晶片之步驟(拾取步驟) (G)將所拾取之附有接著劑片之晶片安裝於基板或其他晶片上之步驟(安裝步驟) The manufacturing method of the semiconductor device 100 includes the following steps. (A) Step of preparing the above-mentioned dicing die bonding integrated film (preparation step) (B) Step of dicing wafer (dicing step) (C) Step of attaching the aforementioned wafer to the aforementioned adhesive layer of the aforementioned diced die-bonding integrated film (wafer attaching step) (D) A step of obtaining a wafer with an adhesive sheet by expanding the substrate layer under cooling conditions and obtaining a wafer with an adhesive layer singulated (cooling expansion step) (E) A step of reducing the adhesion of the adhesive layer to the wafer with the adhesive sheet attached by irradiating the adhesive layer with ultraviolet rays (ultraviolet irradiation step) (F) Step of picking up the wafer with the adhesive sheet attached from the adhesive layer (pick-up step) (G) The step of mounting the picked-up wafer with the adhesive sheet on the substrate or other wafers (mounting step)

一邊參閱圖4及圖5,一邊對附有接著劑片之晶片8的製作方法的一例進行說明。首先,準備上述膜10((A)步驟(準備步驟))。An example of a method for producing the wafer 8 with an adhesive sheet will be described with reference to FIGS. 4 and 5 . First, the above-mentioned film 10 is prepared ((A) step (preparation step)).

接著,在晶圓W的電路面Wa上貼附保護膜(有時稱為“BG帶”。),在晶圓W上照射雷射,而形成複數條預定切割線L((B)步驟(切割步驟),參閱圖4(a))。將其稱為隱形切割。隱形切割能夠對厚度薄的晶圓W(例如,100μm以下)較佳地使用。其後,根據需要,可以對晶圓W進行用於調整晶圓W的厚度之背面磨光處理、以及用於拋光晶圓W之拋光處理。另外,在此對基於雷射的隱形切割進行說明,但亦可以代替隱形切割而藉由刀片來隱形切割晶圓W。有時將其稱為隱形切割的切割。隱形切割表示不切割晶圓W而形成與晶圓W的預定切割線L對應之切口。Next, a protective film (sometimes called "BG tape") is pasted on the circuit surface Wa of the wafer W, and a laser is irradiated on the wafer W to form a plurality of planned dicing lines L ((B) step ( cutting step), see Figure 4(a)). Call it stealth cutting. Stealth dicing can be preferably used for thin wafers W (for example, 100 μm or less). Thereafter, the wafer W may be subjected to a back grinding process for adjusting the thickness of the wafer W and a polishing process for polishing the wafer W as necessary. In addition, although stealth dicing by laser is described here, wafer W may be diced stealthly by a blade instead of stealth dicing. This is sometimes called a stealth cut cut. Stealth dicing means that the wafer W is not diced but a cut corresponding to the predetermined dicing line L of the wafer W is formed.

接著,如圖4(a)所示,對膜10的接著劑層5貼附晶圓W的背面Wb((B)步驟(晶圓貼附步驟))。此時,亦可以對黏著劑層3貼附切割環DR。Next, as shown in FIG. 4( a ), the back surface Wb of the wafer W is attached to the adhesive layer 5 of the film 10 ((B) step (wafer attaching step)). At this time, the dicing ring DR may be attached to the adhesive layer 3 .

接著,如圖4(b)所示,藉由-15~0℃的溫度條件下進行冷卻擴展而將晶圓W及接著劑層5單片化((D)步驟(冷卻擴展步驟))。亦即,如圖4(b)所示,藉由環Ra上推基材層1中的切割環DR的內側區域1a,而對基材層1賦予張力。藉此,晶圓W沿著預定切割線L被分割,並且隨之接著劑層5被接著劑片5P分割,在黏著劑層3的表面上獲得複數個附有接著劑片之晶片8。附有接著劑片之晶片8由晶片S和接著劑片5P構成。Next, as shown in FIG. 4( b ), the wafer W and the adhesive layer 5 are separated into individual pieces by cooling and spreading at a temperature of -15 to 0° C. (step (D) (cooling and spreading step)). That is, as shown in FIG. 4( b ), tension is applied to the base material layer 1 by pushing up the inner region 1 a of the dicing ring DR in the base material layer 1 by the ring Ra. Thereby, the wafer W is divided along the predetermined cutting line L, and the adhesive layer 5 is divided by the adhesive sheet 5P, and a plurality of wafers 8 with adhesive sheets are obtained on the surface of the adhesive layer 3 . The wafer 8 with an adhesive sheet is composed of a wafer S and an adhesive sheet 5P.

接著,藉由將基材層1中的切割環DR的內側區域1a進行加熱而使內側區域1a收縮(熱收縮)。圖5(a)係示意性地表示藉由加熱器H的鼓風而加熱內側區域1a的狀態之剖面圖。藉由將內側區域1a收縮成環狀而對基材層1賦予張力,能夠擴大相鄰之附有接著劑片之晶片8的間隔。藉此,能夠更進一步抑制拾取錯誤的發生,並且能夠提高拾取步驟中的附有接著劑片之晶片8的可見性。Next, by heating the inner region 1 a of the dicing ring DR in the base material layer 1 , the inner region 1 a is shrunk (thermally shrunk). FIG. 5( a ) is a cross-sectional view schematically showing a state in which the inner region 1 a is heated by blowing air from the heater H. As shown in FIG. By shrinking the inner region 1a into a ring shape and applying tension to the base material layer 1, the distance between adjacent wafers 8 with adhesive sheets can be increased. Thereby, the occurrence of a pickup error can be further suppressed, and the visibility of the adhesive sheet-attached wafer 8 in the pickup step can be improved.

接著,如圖5(b)所示,藉由照射紫外線而降低黏著劑層3的黏著力((E)步驟(紫外線照射步驟))。紫外線照射燈並沒有特別限制,例如,能夠使用金屬鹵化物燈、高壓鈉燈、UV-LED燈等。紫外線對黏著劑層3的照度,例如,可以為1~1000mW/cm 2、10~900mW/cm 2或30~800mW/cm 2。紫外線對黏著劑層3的照射量例如為10~3000mJ/cm 2,亦可以為50~2500mJ/cm 2或100~2000mJ/cm 2。其後,如圖5(c)所示,藉由用上推夾具42上推附有接著劑片之晶片8而將附有接著劑片之晶片8從黏著劑層3上剝離,並且用吸夾頭44吸引來拾取附有接著劑片之晶片8((F)步驟(拾取步驟))。 Next, as shown in FIG. 5( b ), the adhesive force of the adhesive layer 3 is lowered by irradiating ultraviolet rays ((E) step (ultraviolet irradiation step)). The ultraviolet irradiation lamp is not particularly limited, for example, a metal halide lamp, a high pressure sodium lamp, a UV-LED lamp, etc. can be used. The illuminance of ultraviolet light on the adhesive layer 3 may be, for example, 1 to 1000 mW/cm 2 , 10 to 900 mW/cm 2 , or 30 to 800 mW/cm 2 . The irradiation amount of ultraviolet rays to the adhesive layer 3 is, for example, 10-3000 mJ/cm 2 , and may be 50-2500 mJ/cm 2 or 100-2000 mJ/cm 2 . Thereafter, as shown in FIG. 5(c), the wafer 8 with the adhesive sheet is peeled off from the adhesive layer 3 by pushing up the wafer 8 with the adhesive sheet 42 with the push-up jig 42, and the wafer 8 with the adhesive sheet is peeled off from the adhesive layer 3, and The chuck 44 attracts and picks up the wafer 8 with the adhesive tablet attached ((F) step (pick-up step)).

附有接著劑片之晶片8被輸送至半導體裝置的組裝裝置(未圖示),壓接於電路基板等上((G)步驟(安裝步驟))。如圖6(a)所示,經由接著劑片5P將第一段的晶片S1(晶片S)壓接到基板70的規定的位置。接著,藉由加熱而使接著劑片5P固化(晶粒接合步驟)。藉此,接著劑片5P藉由固化而成為固化物5C。從減小空隙之觀點考慮,接著劑片5P的固化處理可以在加壓環境下實施。The wafer 8 with the adhesive sheet is conveyed to a semiconductor device assembly device (not shown), and is pressure-bonded to a circuit board or the like ((G) step (mounting step)). As shown in FIG. 6( a ), the wafer S1 (wafer S) of the first stage is pressure-bonded to a predetermined position of the substrate 70 via the adhesive sheet 5P. Next, the adhesive sheet 5P is cured by heating (die bonding step). Thereby, adhesive sheet 5P becomes hardened|cured material 5C by hardening. From the viewpoint of reducing voids, the curing treatment of the adhesive tablet 5P may be performed under a pressurized environment.

與對基板70安裝晶片S1同樣地,在晶片S1的表面上安裝第二段的晶片S2。此外,藉由安裝第三段及第四段的晶片S3、S4而製作圖6(b)所示之結構體60。能夠藉由在用導線W1、W2、W3、W4分別將晶片S1、S2、S3、S4和基板70進行電連接之後,形成用於密封半導體器件及導線之密封層50,並且藉由密封半導體器件及導線而製作圖3所示之半導體裝置100。 [實施例] In the same manner as the wafer S1 is mounted on the substrate 70 , the wafer S2 of the second stage is mounted on the surface of the wafer S1 . In addition, the structure 60 shown in FIG. 6( b ) was produced by mounting the chips S3 and S4 of the third stage and the fourth stage. After electrically connecting the chips S1, S2, S3, S4 and the substrate 70 with wires W1, W2, W3, and W4, the sealing layer 50 for sealing the semiconductor device and the wires can be formed, and by sealing the semiconductor device and wires to fabricate the semiconductor device 100 shown in FIG. 3 . [Example]

以下,基於實施例對本發明及進行具體說明,但本發明並不限定於該等實施例。另外,若沒有特別記載,則藥品使用了均使用了試劑(市售品)。Hereinafter, although this invention is demonstrated concretely based on an Example, this invention is not limited to these Examples. In addition, unless otherwise specified, reagents (commercially available) were used for all drugs.

<實施例1> [(甲基)丙烯酸系樹脂的合成] 在具備並安裝了三合一馬達、攪拌槳及氮氣導入管之容量為2000mL的燒瓶中,加入以下成分。 ·乙酸乙酯(溶劑):635質量份 ·丙烯酸2-乙基己酯:395質量份 ·丙烯酸2-羥乙酯:100質量份 ·甲基丙烯酸:5質量份 ·偶氮雙異丁腈:0.08質量份 <Example 1> [Synthesis of (meth)acrylic resin] Add the following components to a 2000mL flask equipped with a three-in-one motor, a stirring paddle, and a nitrogen inlet tube. ・Ethyl acetate (solvent): 635 parts by mass 2-Ethylhexyl acrylate: 395 parts by mass 2-Hydroxyethyl acrylate: 100 parts by mass ・Methacrylic acid: 5 parts by mass Azobisisobutyronitrile: 0.08 parts by mass

將內容物攪拌至充分均勻之後,以500mL/分鐘的流量實施60分鐘的鼓泡,對系統中的溶解氧進行了脫氣。經1小時升溫至78℃,升溫後聚合了6小時。接著,將反應溶液移送至具備並安裝了三合一馬達、攪拌槳及及氮氣導入管之容量2000mL的壓力釜中,在120℃、0.28Mpa的條件下加熱4.5小時之後,冷卻至室溫(25℃,以下相同)。After stirring the contents until they were sufficiently uniform, bubbling was performed at a flow rate of 500 mL/min for 60 minutes to degas the dissolved oxygen in the system. The temperature was raised to 78° C. over 1 hour, and polymerization was carried out for 6 hours after the temperature was raised. Next, the reaction solution was transferred to a pressure vessel with a capacity of 2000 mL equipped with a three-in-one motor, a stirring paddle and a nitrogen inlet pipe, heated at 120° C. and 0.28 Mpa for 4.5 hours, and then cooled to room temperature ( 25°C, the same below).

接著,加入490質量份的乙酸乙酯並進行攪拌,稀釋了內容物。向其中添加二月桂酸二辛基錫0.10質量份作為胺基甲酸酯化觸媒,然後加入2-甲基丙烯醯氧基乙基異氰酸酯(SHOWA DENKO K.K.製造,Karenz MOI(產品名稱))96.0質量份,在70℃下反應6小時之後,冷卻至室溫。接著,進一步加入乙酸乙酯,將(甲基)丙烯酸系樹脂溶液中的不揮發成分含量調整為35質量%,獲得了製造例1的包含具有可鏈聚合之官能基之(甲基)丙烯酸系樹脂(A-1)之溶液。Next, 490 parts by mass of ethyl acetate was added and stirred to dilute the contents. To this was added 0.10 parts by mass of dioctyltin dilaurate as a urethanization catalyst, and then 2-methacryloxyethyl isocyanate (manufactured by SHOWA DENKO K.K., Karenz MOI (product name)) 96.0 Parts by mass were reacted at 70° C. for 6 hours, and then cooled to room temperature. Next, ethyl acetate was further added to adjust the content of non-volatile components in the (meth)acrylic resin solution to 35% by mass, and the (meth)acrylic resin containing a chain-polymerizable functional group in Production Example 1 was obtained. Solution of resin (A-1).

在60℃下將如上述那樣獲得之包含(甲基)丙烯酸系樹脂(A-1)之溶液真空乾燥一夜。藉由全自動元素分析裝置(Elementar公司製造,產品名稱:vario EL)對由此獲得之固體成分進行元素分析,從氮含量計算出來自於所導入之2-甲基丙烯醯氧基乙基異氰酸酯之官能基的含量的結果,為1.10mmol/g。The solution containing the (meth)acrylic resin (A-1) obtained above was vacuum-dried overnight at 60 degreeC. The solid content thus obtained was subjected to elemental analysis by a fully automatic elemental analysis device (manufactured by Elementar, product name: vario EL), and the nitrogen content was calculated to be derived from the introduced 2-methacryloxyethyl isocyanate. As a result, the content of the functional group was 1.10 mmol/g.

又,使用以下裝置,求出了(甲基)丙烯酸系樹脂(A-1)的聚苯乙烯換算的重量平均分子量。亦即,使用TOSOH CORPORATION製造之SD-8022/DP-8020/RI-8020,管柱上使用Showa Denko Materials Co., Ltd.製造之Gelpack GL-A150-S/GL-A160-S,洗提液使用四氫呋喃進行了GPC測量。其結果,聚苯乙烯換算的重量平均分子量為40萬。依據JIS K0070中記載之方法測量之羥值及酸值為22.8mgKOH/g及6.5mgKOH/g。Moreover, the polystyrene conversion weight average molecular weight of (meth)acrylic-type resin (A-1) was calculated|required using the following apparatus. That is, SD-8022/DP-8020/RI-8020 manufactured by TOSOH CORPORATION was used, Gelpack GL-A150-S/GL-A160-S manufactured by Showa Denko Materials Co., Ltd. was used on the column, and the eluent GPC measurements were performed using tetrahydrofuran. As a result, the weight average molecular weight in terms of polystyrene was 400,000. The hydroxyl value and acid value measured according to the method described in JIS K0070 were 22.8 mgKOH/g and 6.5 mgKOH/g.

<實施例1> [切割膜(黏著劑層)的製作] 藉由混合以下成分,製備了紫外線固化型黏著劑的清漆(黏著劑層形成用清漆)(參閱表1)。乙酸乙酯(溶劑)的量調整為清漆的總固體成分含量成為25質量%。 ·製造例1的包含(甲基)丙烯酸系樹脂(A-1)之溶液:100質量份(固體成分) ·光聚合起始劑(B-1)1-羥基環己基苯基甲酮(IGM RESINS B.V.公司製造,Omnirad 184,“Omnirad”為註冊商標,220~400nm的最大吸收波長:243nm):2.0質量份 ·光聚合起始劑(B-2)苯基雙(2,4,6-三甲基苯甲醯基)氧化膦(IGM RESINS B.V.公司製造,Omnirad 819,“Omnirad”為註冊商標,220~400nm的最大吸收波長:380nm):0.2質量份 ·光聚合起始劑(B-3)2-二甲胺基-2-(4-甲基-芐基)-1-(4-嗎啉-4-基-苯基)-丁烷-1-酮(IGM RESINS B.V.公司製造,Omnirad 379EG,“Omnirad”為註冊商標,220~400nm的最大吸收波長:320nm):0.5質量份 ·光聚合起始劑(B-4)2,2-二甲氧基-1,2-二苯基乙烷-1-酮(IGM RESINS B.V.公司製造,Omnirad 651,“Omnirad”為註冊商標,220~400nm的最大吸收波長:252nm):0.4質量份 ·增感劑(b-1)2,4-二乙硫基口山口星-9-酮(Tokyo Chemical Industry Co.,Ltd.):0質量份 ·交聯劑(C-1)六亞乙基二異氰酸酯(Nippon Polyurethane Industry Co.,Ltd.製造,Coronate HL,固體成分:75%):4.0質量份(固體成分) ·乙酸乙酯(溶劑) <Example 1> [Manufacturing of dicing film (adhesive layer)] A varnish (varnish for forming an adhesive layer) of an ultraviolet curable adhesive was prepared by mixing the following components (see Table 1). The quantity of ethyl acetate (solvent) was adjusted so that the total solid content of a varnish might become 25 mass %. ・The solution containing the (meth)acrylic resin (A-1) of Production Example 1: 100 parts by mass (solid content) Photopolymerization initiator (B-1) 1-hydroxycyclohexyl phenyl ketone (manufactured by IGM RESINS B.V., Omnirad 184, "Omnirad" is a registered trademark, maximum absorption wavelength of 220 to 400 nm: 243 nm): 2.0 mass share ·Photopolymerization initiator (B-2) phenylbis(2,4,6-trimethylbenzoyl)phosphine oxide (manufactured by IGM RESINS B.V., Omnirad 819, "Omnirad" is a registered trademark, 220~ Maximum absorption wavelength at 400nm: 380nm): 0.2 parts by mass ・Photopolymerization initiator (B-3) 2-dimethylamino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butane-1 - Ketone (manufactured by IGM RESINS B.V., Omnirad 379EG, "Omnirad" is a registered trademark, maximum absorption wavelength of 220 to 400 nm: 320 nm): 0.5 parts by mass ・Photopolymerization initiator (B-4) 2,2-dimethoxy-1,2-diphenylethan-1-one (manufactured by IGM RESINS B.V., Omnirad 651, "Omnirad" is a registered trademark, Maximum absorption wavelength of 220-400nm: 252nm): 0.4 parts by mass ・Sensitizer (b-1) 2,4-diethylthio-Kushin-9-one (Tokyo Chemical Industry Co., Ltd.): 0 parts by mass ・Crosslinking agent (C-1) hexaethylene diisocyanate (manufactured by Nippon Polyurethane Industry Co., Ltd., Coronate HL, solid content: 75%): 4.0 parts by mass (solid content) · Ethyl acetate (solvent)

另外,光聚合起始劑的最大吸收波長使用可見-紫外分光光度計U-3010(Hitachi High-Tech Science Corporation製造),在乙腈中溶解了0.001質量%的光聚合起始劑之溶液作為樣品,測量波長220~400nm的區域中的光聚合起始劑的吸光度來求出。In addition, the maximum absorption wavelength of the photopolymerization initiator used a visible-ultraviolet spectrophotometer U-3010 (manufactured by Hitachi High-Tech Science Corporation), and a solution in which 0.001% by mass of the photopolymerization initiator was dissolved in acetonitrile was used as a sample, It obtains by measuring the absorbance of the photopolymerization initiator in the wavelength range of 220 to 400 nm.

準備了在一個表面實施了脫模處理之聚對苯二甲酸乙二酯膜(寬度450mm,長度500mm,厚度38μm)。在實施了脫模處理之面上,使用塗敷器塗佈紫外線固化型黏著劑的清漆之後,在80℃下乾燥了3分鐘。由此獲得了由聚對苯二甲酸乙二酯膜和在其上形成之厚度10μm的黏著劑層組成之積層體(切割膜)。A polyethylene terephthalate film (450 mm in width, 500 mm in length, and 38 μm in thickness) in which one surface was subjected to mold release treatment was prepared. On the surface subjected to the release treatment, a varnish of an ultraviolet curable adhesive was applied using an applicator, and then dried at 80° C. for 3 minutes. Thus, a laminate (cut film) composed of a polyethylene terephthalate film and an adhesive layer having a thickness of 10 μm formed thereon was obtained.

準備了在一個表面實施了電暈處理之聚烯烴膜(寬度450mm,長度500mm,厚度90μm)。在室溫下貼合了實施了電暈處理之面和上述積層體的黏著劑層。接著,藉由用橡膠輥按壓,而將黏著劑層轉印到聚烯烴膜(覆蓋膜)。其後,藉由在室溫下放置3天,而獲得了附有覆蓋膜之切割膜。A polyolefin film (450 mm in width, 500 mm in length, and 90 μm in thickness) having one surface subjected to corona treatment was prepared. The corona-treated surface and the adhesive layer of the above-mentioned laminate were bonded together at room temperature. Next, the adhesive layer was transferred to the polyolefin film (cover film) by pressing with a rubber roller. Thereafter, by standing at room temperature for 3 days, a dicing film with a cover film was obtained.

[晶粒接合膜(接著劑層)的製作] 藉由混合以下成分,而製備了接著劑層形成用清漆。首先,在包含以下成分之混合物中加入環己酮(溶劑)並進行攪拌混合之後,進一步使用珠磨機混錬了90分鐘。 ·環氧樹脂(N-500P-10(產品名稱),DIC CORPORATION製造,甲酚酚醛清漆型環氧樹脂,環氧當量:200,軟化點:85℃):11.0質量份 ·環氧樹脂(EXA-830CRP(產品名稱),DIC CORPORATION製造,雙酚F型環氧樹脂,環氧當量:160,分子量:1800,軟化點:85℃):13.0質量份 ·酚樹脂(Millex XLC-LL(產品名稱),Mitsui Chemicals, Inc.製造,酚樹脂,羥基當量:175,吸水率:1.8%,350℃下的加熱重量減少率:4%):19.0質量份 ·矽烷偶合劑(NUC A-189(產品名稱)NUC公司製造,γ-巰基丙基三甲氧基矽烷):0.1質量份 ·矽烷偶合劑(NUC A-1160(產品名稱),ENEOS NUC Corporation製造,γ-脲基丙基三乙氧基矽烷):0.2質量份 ·填充劑(SC2050-HLG(產品名稱),ADMATECHS CO., LTD.製造,二氧化矽,平均粒徑0.500μm):39質量份 [Production of die bonding film (adhesive layer)] A varnish for forming an adhesive layer was prepared by mixing the following components. First, cyclohexanone (solvent) was added to a mixture containing the following components, stirred and mixed, and further mixed using a bead mill for 90 minutes. ・Epoxy resin (N-500P-10 (product name), manufactured by DIC CORPORATION, cresol novolac type epoxy resin, epoxy equivalent: 200, softening point: 85°C): 11.0 parts by mass ・Epoxy resin (EXA-830CRP (product name), manufactured by DIC CORPORATION, bisphenol F type epoxy resin, epoxy equivalent: 160, molecular weight: 1800, softening point: 85°C): 13.0 parts by mass ・Phenol resin (Millex XLC-LL (product name), manufactured by Mitsui Chemicals, Inc., phenol resin, hydroxyl equivalent: 175, water absorption: 1.8%, heating weight loss rate at 350°C: 4%): 19.0 parts by mass ・Silane coupling agent (NUC A-189 (product name) manufactured by NUC Corporation, γ-mercaptopropyltrimethoxysilane): 0.1 parts by mass ・Silane coupling agent (NUC A-1160 (product name), manufactured by ENEOS NUC Corporation, γ-ureidopropyltriethoxysilane): 0.2 parts by mass ・Filler (SC2050-HLG (product name), manufactured by ADMATECHS CO., LTD., silica, average particle size 0.500 μm): 39 parts by mass

在如上述那樣獲得之混合物中,進一步加入以下成分之後,藉由攪拌混合及真空脫氣的步驟,獲得了接著劑層形成用清漆。 ·含有環氧基之丙烯酸共聚物(HTR-860P-3(產品名稱),Nagase Chemtex Corporation製造,重量平均分子量:80萬):18質量份 ·固化促進劑(Curesol 2PZ-CN(產品名稱),SHIKOKU CHEMICALS CORPORATION製造,1-氰基乙基-2-苯基咪唑,“Curesol”為註冊商標)0.1質量份 After further adding the following components to the mixture obtained as described above, a varnish for forming an adhesive layer was obtained by steps of stirring and mixing and vacuum degassing. ・Acrylic copolymer containing epoxy group (HTR-860P-3 (product name), manufactured by Nagase Chemtex Corporation, weight average molecular weight: 800,000): 18 parts by mass · Curing accelerator (Curesol 2PZ-CN (product name), manufactured by SHIKOKU CHEMICALS CORPORATION, 1-cyanoethyl-2-phenylimidazole, "Curesol" is a registered trademark) 0.1 parts by mass

準備了聚對苯二甲酸乙二酯膜(厚度35μm),其一個表面被實施了脫模處理。在實施了脫模處理之面上,使用塗敷器塗佈接著劑層形成用清漆之後,在140℃下加熱乾燥了5分鐘。藉此,獲得了由聚對苯二甲酸乙二酯膜(載子膜)、以及形成於其上之厚度50μm的接著劑層(B階段狀態)組成之積層體(晶粒接合膜)。A polyethylene terephthalate film (thickness: 35 μm) was prepared, and one surface thereof was subjected to mold release treatment. After applying the varnish for forming an adhesive layer on the surface subjected to the mold release treatment using an applicator, it was heated and dried at 140° C. for 5 minutes. Thereby, a laminate (die-bonding film) composed of a polyethylene terephthalate film (carrier film) and an adhesive layer (B-stage state) having a thickness of 50 μm formed thereon was obtained.

[切割晶粒接合一體型膜的製作] 將由接著劑層和載子膜組成之晶粒接合膜切割成每個載體膜為直徑335mm的圓形。在所切割之晶粒接合膜上,在室溫下貼附剝離了聚對苯二甲酸乙二酯膜之切割膜,然後在室溫下放置1天。其後,將切割膜切割成直徑370mm的圓形。以這種方式獲得了用於供後述各種評價試驗之複數個實施例1的切割晶粒接合一體型膜。 [Manufacturing of dicing die bonding integrated film] The die-bonding film composed of the adhesive layer and the carrier film was cut into a circle with a diameter of 335 mm for each carrier film. On the diced die-bonding film, the dicing film from which the polyethylene terephthalate film was peeled was attached at room temperature, and then left to stand at room temperature for 1 day. Thereafter, the dicing film was cut into a circle having a diameter of 370 mm. In this way, a plurality of diced die-bonding integrated films of Example 1 used for various evaluation tests described later were obtained.

<實施例2~7及比較例1~4> 除了將表1的實施例1的黏著劑層的組成變更為表1及表2的實施例2~7及的比較例1~4的黏著劑層的組成以外,以與實施例1相同的方式,分別獲得了複數個實施例2~7及比較例1~4的切割晶粒接合一體型膜。 <Examples 2 to 7 and Comparative Examples 1 to 4> Except changing the composition of the adhesive layer of Example 1 in Table 1 to the composition of the adhesive layer of Examples 2 to 7 and Comparative Examples 1 to 4 in Table 1 and Table 2, the method was the same as that of Example 1. , A plurality of cut die bonding integrated films of Examples 2 to 7 and Comparative Examples 1 to 4 were respectively obtained.

[評價試驗] (1)黏著劑層的相對於接著劑的黏著力(30°剝離強度)的測量 將紫外線照射前的黏著劑層的相對於接著劑之黏著力及照射紫外線後的黏著劑層的黏著力,藉由測量30°剝離強度而進行了評價。關於紫外線照射前的黏著劑層的測量試樣,藉由將切割晶粒接合一體型膜切出寬度25mm及長度100mm而獲得。關於照射紫外線後的黏著劑層的測量試樣,藉由將切割晶粒接合一體型膜切出寬度25mm及長度100mm,並使用紫外線照射裝置(GS Yuasa Corporation,傳送帶紫外線照射裝置CS60)對其照射照度70mW/cm 2及照射量150mJ/cm 2的紫外線(主波長:365nm)而獲得。使用拉伸試驗機(SHIMADZU CORPORATION製造,Autograph“AGS-1000”),從各自的測量試樣中測量了黏著劑層的相對於接著劑層的剝離強度量。測量條件設為剝離角度30°及剝離速度600mm/分鐘。試樣的保存及剝離強度的測量,在溫度23℃、相對濕度60%的環境下進行。將結果示於表1及表2中。另外,剝離強度的測量上限為“20N/25mm”,表1及表2中的“>20”表示超過測量上限。 [Evaluation Test] (1) Measurement of Adhesive Strength of Adhesive Layer to Adhesive (30° Peel Strength) The adhesion was evaluated by measuring the 30° peel strength. About the measurement sample of the adhesive layer before ultraviolet-ray irradiation, it obtained by cutting out the diced die-bonding integral type film with a width of 25 mm and a length of 100 mm. Regarding the measurement sample of the adhesive layer after irradiating ultraviolet rays, cut out a diced die-bonded integrated film with a width of 25 mm and a length of 100 mm, and irradiate it with an ultraviolet irradiation device (GS Yuasa Corporation, conveyor belt ultraviolet irradiation device CS60) Obtained with ultraviolet rays (main wavelength: 365nm) with an illuminance of 70mW/cm 2 and an irradiation dose of 150mJ/cm 2 . Using a tensile tester (manufactured by Shimadzu Corporation, Autograph "AGS-1000"), the amount of peel strength of the adhesive layer with respect to the adhesive layer was measured from each measurement sample. The measurement conditions were set at a peeling angle of 30° and a peeling speed of 600 mm/min. The storage of the sample and the measurement of the peel strength are carried out in an environment with a temperature of 23°C and a relative humidity of 60%. The results are shown in Table 1 and Table 2. In addition, the measurement upper limit of the peel strength is "20N/25mm", and ">20" in Table 1 and Table 2 indicates that the measurement upper limit was exceeded.

(2)在接觸氧之條件下對接著劑層照射紫外線後的黏著劑層的黏著力(30°剝離強度)的測量 假設在接著劑層與黏著劑層之間發生剝離而黏著劑層與氧接觸之情況,預先在接觸氧之條件下對黏著劑層照射紫外線,並且使用照射紫外線後的黏著劑層製作了切割晶粒接合一體型膜。藉由測量使用該切割晶粒接合一體型膜,在接觸氧之條件下對接著劑層的照射紫外線後的黏著劑層的30°剝離強度下的黏著力來進行了評價。測量試樣以如下方式製作。首先,剝離切割膜的聚對苯二甲酸乙二酯膜,將黏著劑層暴露於氧中,然後使用紫外線照射裝置(GS Yuasa Corporation,傳送帶紫外線照射裝置CS60),照射了照度70mW/cm 2及照射量150mJ/cm 2的紫外線(主波長:365nm)。接著,以與上述切割晶粒接合一體型膜的製作條件相同的方式獲得了用於供評價試驗之切割晶粒接合一體型膜。接著,藉由將所獲得之切割晶粒接合一體型膜切出寬度25mm及長度100mm,而獲得了測量試樣。使用拉伸試驗機(SHIMADZU CORPORATION製造,Autograph“AGS-1000”),測量了對從測量試樣的接著劑層接觸氧之條件下的照射紫外線後的黏著劑層的剝離強度。測量條件設為剝離角度30°及剝離速度600mm/分鐘。試樣的保存及剝離強度的測量,在溫度23℃、相對濕度60%的環境下進行。將結果示於表1及表2中。 (2) The measurement of the adhesive force (30° peel strength) of the adhesive layer after irradiating the adhesive layer with ultraviolet rays under the condition of exposure to oxygen assumes that peeling occurs between the adhesive layer and the adhesive layer and the adhesive layer is separated from oxygen. In the case of contact, the adhesive layer was irradiated with ultraviolet rays under the condition of being exposed to oxygen in advance, and a dicing die bonding integrated film was produced using the adhesive layer irradiated with ultraviolet rays. Evaluation was performed by measuring the adhesive force at 30° peel strength of the adhesive layer after irradiating ultraviolet rays to the adhesive layer under the condition of contacting oxygen using the dicing die-bonding integrated film. The measurement sample was produced as follows. First, the polyethylene terephthalate film of the dicing film was peeled off, and the adhesive layer was exposed to oxygen, and then irradiated with an illuminance of 70mW/cm 2 and Ultraviolet rays with an irradiation dose of 150mJ/cm 2 (dominant wavelength: 365nm). Next, a dicing die-bonding integrated film for evaluation tests was obtained in the same manner as the production conditions of the above-mentioned dicing die-bonding integrated film. Next, a measurement sample was obtained by cutting out the obtained diced die-bonded integrated film with a width of 25 mm and a length of 100 mm. Using a tensile tester (manufactured by SHIMADZU CORPORATION, Autograph "AGS-1000"), the peeling strength of the adhesive layer after ultraviolet irradiation was measured under the condition that the adhesive layer of the measurement sample was exposed to oxygen. The measurement conditions were set at a peeling angle of 30° and a peeling speed of 600 mm/min. The storage of the sample and the measurement of the peel strength are carried out in an environment with a temperature of 23°C and a relative humidity of 60%. The results are shown in Table 1 and Table 2.

[表1]          實施例1 實施例2 實施例3 實施例4 實施例5 實施例6 實施例7 黏著劑層的組成(質量份) (甲基)丙烯酸系樹脂 (A-1) 100 100 100 100 100 100 100 光聚合起始劑 (B-1) 2.0 2.0 - 2.0 3.0 0.4 0.6 (B-2) 0.2 0.2 0.2 - 0.2 0.2 0.2 (B-3) 0.5 0.5 0.5 0.5 0.5 0.5 0.5 (B-4) 0.4 - 1.0 0.4 0.6 2.0 3.0 增感劑 (b-1) - - - - - - - 交聯劑 (C-1) 4.0 4.0 4.0 4.0 4.0 4.0 4.0 黏著劑層的相對於接著劑層的黏著力(N/25mm) 照射紫外線前 10.5 11.2 11.0 11.8 11.5 11.8 11.7 照射紫外線後 0.7 0.7 0.8 0.7 0.7 0.7 0.7 照射紫外線後 (接觸氧條件) 3.3 3.3 3.6 3.3 3.1 3.2 3.1 [Table 1] Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Composition of the adhesive layer (parts by mass) (meth)acrylic resin (A-1) 100 100 100 100 100 100 100 Photopolymerization initiator (B-1) 2.0 2.0 - 2.0 3.0 0.4 0.6 (B-2) 0.2 0.2 0.2 - 0.2 0.2 0.2 (B-3) 0.5 0.5 0.5 0.5 0.5 0.5 0.5 (B-4) 0.4 - 1.0 0.4 0.6 2.0 3.0 Sensitizer (b-1) - - - - - - - crosslinking agent (C-1) 4.0 4.0 4.0 4.0 4.0 4.0 4.0 Adhesive force of the adhesive layer relative to the adhesive layer (N/25mm) Before UV irradiation 10.5 11.2 11.0 11.8 11.5 11.8 11.7 After UV irradiation 0.7 0.7 0.8 0.7 0.7 0.7 0.7 After UV irradiation (exposed to oxygen conditions) 3.3 3.3 3.6 3.3 3.1 3.2 3.1

[表2]    比較例1 比較例2 比較例3 比較例4 黏著劑層的組成(質量份) (甲基)丙烯酸系樹脂 (A-1) 100 100 100 100 光聚合起始劑 (B-1) 1.0 1.0 - - (B-2) 0.2 0.2 - 2.0 (B-3) - - 0.5 - (B-4) - - - - 增感劑 (b-1) - - 0.1 - 交聯劑 (C-1) 4.0 1.0 4.0 4.0 黏著劑層的相對於接著劑層的黏著力(N/25mm) 照射紫外線前 12.0 >20 13.1 12.5 照射紫外線後 0.7 0.8 1.3 1.0 照射紫外線後 (接觸氧條件) 4.2 6.3 6.8 6.9 [Table 2] Comparative example 1 Comparative example 2 Comparative example 3 Comparative example 4 Composition of the adhesive layer (parts by mass) (meth)acrylic resin (A-1) 100 100 100 100 Photopolymerization initiator (B-1) 1.0 1.0 - - (B-2) 0.2 0.2 - 2.0 (B-3) - - 0.5 - (B-4) - - - - Sensitizer (b-1) - - 0.1 - crosslinking agent (C-1) 4.0 1.0 4.0 4.0 Adhesive force of the adhesive layer relative to the adhesive layer (N/25mm) Before UV irradiation 12.0 >20 13.1 12.5 After UV irradiation 0.7 0.8 1.3 1.0 After UV irradiation (exposed to oxygen conditions) 4.2 6.3 6.8 6.9

如表1及表2所示,關於對接著劑層接觸氧之條件下的照射紫外線後的黏著劑層的黏著力(30°剝離強度),實施例1~7的切割晶粒接合一體型膜與比較例1~4的切割晶粒接合一體型膜相比,黏著力充分降低。比較例3的切割晶粒接合一體型膜,係在黏著劑層中包含增感劑者,但黏著力並沒有充分降低。比較例4的切割晶粒接合一體型膜,係在黏著劑層中包含規定量的1種光聚合起始劑者,但黏著力並沒有充分降低。從該等結果中確認到,本發明的切割晶粒接合一體型膜,其即使在黏著劑層與氧接觸之情況下,在對黏著劑層照射紫外線時,亦能夠使黏著劑層的相對於接著劑層的黏著力充分降低。As shown in Table 1 and Table 2, regarding the adhesive force (30° peel strength) of the adhesive layer after irradiating the adhesive layer under the condition of exposing the adhesive layer to oxygen (30° peel strength), the diced die bonding integrated films of Examples 1 to 7 Compared with the diced die-bonding integrated films of Comparative Examples 1 to 4, the adhesive force was sufficiently lowered. The diced die bonding integrated film of Comparative Example 3 contained a sensitizer in the adhesive layer, but the adhesive force was not sufficiently lowered. The diced die bonding integrated film of Comparative Example 4 included a predetermined amount of one type of photopolymerization initiator in the adhesive layer, but the adhesive force was not sufficiently lowered. From these results, it was confirmed that the diced die-bonding integrated film of the present invention can make the adhesive layer relatively The adhesive force of the adhesive layer is sufficiently reduced.

1:基材層 3:黏著劑層 5:接著劑層 8:附有接著劑片之晶片 10:切割晶粒接合一體型膜 W:晶圓 1: Substrate layer 3: Adhesive layer 5: Adhesive layer 8: Chip with adhesive sheet 10: Cutting Die Bonding Integrated Film W: Wafer

圖1(a)係表示切割晶粒接合一體型膜的一實施形態之俯視圖,圖1(b)係沿著圖1(a)所示的B-B線之示意剖面圖。 圖2係示意性地表示測量黏著劑層的相對於接著劑層的30°剝離強度之狀態的剖面圖。 圖3係半導體裝置的一實施形態的示意剖面圖。 圖4(a)及圖4(b)係示意性地表示製造附有接著劑片之晶片之過程的剖面圖。 圖5(a)、圖5(b)及圖5(c)係示意性地表示製造附有接著劑片之晶片之過程的剖面圖。 圖6(a)及圖6(b)係示意性地表示製造圖3所示的半導體裝置之過程的剖面圖。 FIG. 1( a ) is a plan view showing one embodiment of a dicing die-bonding integrated film, and FIG. 1( b ) is a schematic cross-sectional view along line B-B shown in FIG. 1( a ). Fig. 2 is a cross-sectional view schematically showing a state of measuring the 30° peel strength of the adhesive layer with respect to the adhesive layer. FIG. 3 is a schematic cross-sectional view of an embodiment of a semiconductor device. 4(a) and 4(b) are cross-sectional views schematically showing the process of manufacturing a wafer with an adhesive tablet. Fig. 5(a), Fig. 5(b) and Fig. 5(c) are cross-sectional views schematically showing the process of manufacturing a wafer with an adhesive tablet. 6( a ) and FIG. 6( b ) are cross-sectional views schematically showing the process of manufacturing the semiconductor device shown in FIG. 3 .

1:基材層 1: Substrate layer

3:黏著劑層 3: Adhesive layer

5:接著劑層 5: Adhesive layer

10:切割晶粒接合一體型膜 10: Cutting Die Bonding Integrated Film

W:晶圓 W: Wafer

Claims (4)

一種切割晶粒接合一體型膜,其依序具備基材層、包含由紫外線固化型黏著劑組成之紫外線固化型黏著劑層之黏著劑層、以及接著劑層,其中 前述包含於黏著劑層之前述紫外線固化型黏著劑層與前述接著劑層接觸而設置, 前述紫外線固化型黏著劑包含具有可鏈聚合之官能基之(甲基)丙烯酸系樹脂及光聚合起始劑, 前述紫外線固化型黏著劑至少包含第1光聚合起始劑、與前述第1光聚合起始劑的紫外線區域的最大吸收波長不同之第2光聚合起始劑,來作為前述光聚合起始劑, 前述光聚合起始劑的含量相對於前述(甲基)丙烯酸系樹脂的總量100質量份為1.5質量份以上。 A dicing die bonding integrated film, which sequentially includes a substrate layer, an adhesive layer including an ultraviolet curable adhesive layer composed of an ultraviolet curable adhesive, and an adhesive layer, wherein The aforementioned ultraviolet curable adhesive layer included in the adhesive layer is provided in contact with the aforementioned adhesive layer, The aforementioned ultraviolet curable adhesive includes a (meth)acrylic resin having chain-polymerizable functional groups and a photopolymerization initiator, The ultraviolet curable adhesive includes at least a first photoinitiator and a second photoinitiator having a maximum absorption wavelength in the ultraviolet region different from that of the first photoinitiator as the photoinitiator , Content of the said photoinitiator is 1.5 mass parts or more with respect to 100 mass parts of total amounts of the said (meth)acrylic-type resin. 如請求項1所述之切割晶粒接合一體型膜,其中 前述官能基係選自丙烯醯基及甲基丙烯醯基中的至少一種。 The dicing die bonding integrated film as claimed in claim 1, wherein The aforementioned functional group is at least one selected from acryl and methacryl. 如請求項1或請求項2所述之切割晶粒接合一體型膜,其中 前述(甲基)丙烯酸系樹脂的至少一部分被交聯劑交聯。 The dicing die bonding integrated film according to claim 1 or claim 2, wherein At least a part of the (meth)acrylic resin is crosslinked by a crosslinking agent. 一種半導體裝置之製造方法,其包括: (A)準備請求項1或請求項2所述之切割晶粒接合一體型膜之步驟; (B)切割晶圓之步驟; (C)對前述切割晶粒接合一體型膜的前述接著劑層貼附前述晶圓之步驟; (D)在冷卻條件下擴展前述基材層,藉此而獲得前述晶圓及前述接著劑層單片化而成之附有接著劑片之晶片之步驟; (E)對前述黏著劑層照射紫外線,藉此而降低前述黏著劑層的相對於前述附有接著劑片之晶片的黏著力之步驟; (F)從前述黏著劑層上拾取前述附有接著劑片之晶片之步驟;及 (G)將所拾取之前述附有接著劑片之晶片安裝於基板或其他晶片上之步驟。 A method of manufacturing a semiconductor device, comprising: (A) the step of preparing the dicing die-bonding integrated film described in claim 1 or claim 2; (B) Steps of dicing wafers; (C) A step of attaching the aforementioned wafer to the aforementioned adhesive layer of the aforementioned diced die-bonding integrated film; (D) The step of expanding the aforementioned substrate layer under cooling conditions, thereby obtaining a wafer with an adhesive sheet formed by singulating the aforementioned wafer and the aforementioned adhesive layer; (E) A step of irradiating ultraviolet rays to the adhesive layer, thereby reducing the adhesive force of the adhesive layer relative to the wafer with the adhesive sheet attached; (F) the step of picking up the aforementioned wafer with the adhesive sheet attached from the aforementioned adhesive layer; and (G) A step of mounting the picked-up wafer with the adhesive sheet on a substrate or other wafers.
TW111120391A 2021-06-02 2022-06-01 Integrated dicing/die bonding film and method for producing semiconductor device TW202302791A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-092942 2021-06-02
JP2021092942 2021-06-02

Publications (1)

Publication Number Publication Date
TW202302791A true TW202302791A (en) 2023-01-16

Family

ID=84323260

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111120391A TW202302791A (en) 2021-06-02 2022-06-01 Integrated dicing/die bonding film and method for producing semiconductor device

Country Status (2)

Country Link
TW (1) TW202302791A (en)
WO (1) WO2022255321A1 (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4630377B2 (en) * 2009-03-11 2011-02-09 古河電気工業株式会社 Manufacturing method of semiconductor device
SG183334A1 (en) * 2010-03-09 2012-09-27 Furukawa Electric Co Ltd Wafer-processing film and method of manufacturing semiconductor device by using wafer-processing film
JP7059553B2 (en) * 2017-10-04 2022-04-26 昭和電工マテリアルズ株式会社 Adhesive tape for stealth dicing, dicing die bonding integrated tape, and method for manufacturing semiconductor devices
JP7287797B2 (en) * 2019-03-11 2023-06-06 日東電工株式会社 Dicing tape with adhesive film

Also Published As

Publication number Publication date
WO2022255321A1 (en) 2022-12-08

Similar Documents

Publication Publication Date Title
WO2021095302A1 (en) Semiconductor device production method, dicing die-bonding integrated film, and production method therefor
JP7059553B2 (en) Adhesive tape for stealth dicing, dicing die bonding integrated tape, and method for manufacturing semiconductor devices
TWI778263B (en) Slicing and sticking monolithic film, method for manufacturing the same, and method for manufacturing a semiconductor device
TW201327653A (en) Cut bonding sheet
JP5620834B2 (en) Adhesive composition and adhesive sheet
TW202123326A (en) Dicing die-bonding integrated film, production method therefor, and semiconductor device production method
CN112292431B (en) Crystal cutting and crystal bonding integrated film and pressure-sensitive adhesive film used by same
TW202302791A (en) Integrated dicing/die bonding film and method for producing semiconductor device
TW202303719A (en) Method for producing semiconductor device, and dicing-die bonding integrated film
JP6835296B1 (en) Evaluation method of pick-up property, dicing / die bonding integrated film, evaluation method and sorting method of dicing / die bonding integrated film, and manufacturing method of semiconductor device
JP7409030B2 (en) Dicing/die bonding integrated film and its manufacturing method, and semiconductor device manufacturing method
JP6860122B1 (en) Evaluation method of pick-up property, dicing / die bonding integrated film, evaluation method and sorting method of dicing / die bonding integrated film, and manufacturing method of semiconductor device
JP2024072584A (en) Method for manufacturing semiconductor device
JP2023137425A (en) Dicing/die bonding integrated film and semiconductor device manufacturing method