TW202249298A - Pixel array and formation method thereof, metal mask and formation method thereof - Google Patents

Pixel array and formation method thereof, metal mask and formation method thereof Download PDF

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TW202249298A
TW202249298A TW110120829A TW110120829A TW202249298A TW 202249298 A TW202249298 A TW 202249298A TW 110120829 A TW110120829 A TW 110120829A TW 110120829 A TW110120829 A TW 110120829A TW 202249298 A TW202249298 A TW 202249298A
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luminescent materials
openings
substrate
grooves
luminescent material
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TWI777604B (en
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江南輝
莫堯安
陳信宏
林居廣
范耀中
賴敬權
林繼民
黃秉修
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友達光電股份有限公司
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Priority to CN202111376367.XA priority patent/CN114068665A/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A Pixel array includes a substrate and a plurality of first light emitting materials, a plurality of second light emitting materials, a plurality of third light emitting materials and a plurality of fourth light emitting materials on the substrate. The second light emitting materials have a color same as a color of the first light emitting materials. The first light emitting materials and the second light emitting materials are arranged along a direction at a first interval and a second interval alternately. The first interval is different from the second interval. The third light emitting materials have a color different from the colors of the first and second light emitting materials. The fourth light emitting materials have a color different from the colors of the first, second and third light emitting materials.

Description

畫素陣列及其製作方法,金屬光罩及其製作方法Pixel array and manufacturing method thereof, metal mask and manufacturing method thereof

本發明是有關於一種畫素陣列及其製作方法且有關於一種金屬光罩及其製作方法。The present invention relates to a pixel array and its manufacturing method, and to a metal mask and its manufacturing method.

主動矩陣有機發光二極體(active matrix organic light-emitting diode；AMOLED)是顯示器技術發展的重點項目之一，目前製作方法中，可利用蒸鍍的方式將有機發光材料鍍覆在陣列基板上，並透過金屬光罩讓有機發光材料蒸鍍在正確的位置。Active matrix organic light-emitting diode (AMOLED) is one of the key projects in the development of display technology. In the current manufacturing method, organic light-emitting materials can be plated on the array substrate by evaporation. And the organic light-emitting material is vapor-deposited at the correct position through the metal mask.

金屬光罩的製作需要使用蝕刻的方式，例如會利用到二次蝕刻來製作開口。為了因應高解析度的產品，開口的密度需要提升。然而，開口間距離越來越短，容易在蝕刻時導致相鄰的開口連通，降低了金屬光罩的良率。因此，如何提高其良率並兼顧高解析度需求，將是本領域相關技術人員重要的課題。The metal photomask needs to be etched, for example, secondary etching is used to make openings. In order to cope with high-resolution products, the density of openings needs to be increased. However, as the distance between the openings becomes shorter and shorter, it is easy to cause the adjacent openings to be connected during etching, which reduces the yield of the metal photomask. Therefore, how to improve the yield rate while taking into account the high resolution requirements will be an important subject for those skilled in the art.

本發明提供一種畫素陣列及其製作方法且提供一種金屬光罩及其製作方法，可製作高解析度產品。The invention provides a pixel array and its manufacturing method, and provides a metal mask and its manufacturing method, which can make high-resolution products.

本發明一實施例的畫素陣列，包括基板、多個第一發光材料、多個第二發光材料、多個第三發光材料及多個第四發光材料。第一發光材料位於基板上。第二發光材料位於基板上。第二發光材料的顏色和第一發光材料的顏色相同，第一發光材料和第二發光材料在一方向上交替地以第一間距及第二間距排列，第一間距不等於第二間距。第三發光材料位於基板上，第三發光材料的顏色不同於第一及第二發光材料的顏色。第四發光材料位於基板上，第四發光材料的顏色不同於第一、第二、第三發光材料的顏色。A pixel array according to an embodiment of the present invention includes a substrate, a plurality of first luminescent materials, a plurality of second luminescent materials, a plurality of third luminescent materials and a plurality of fourth luminescent materials. The first luminescent material is located on the substrate. The second luminescent material is located on the substrate. The color of the second luminescent material is the same as that of the first luminescent material, and the first luminescent material and the second luminescent material are alternately arranged in a first pitch and a second pitch in one direction, and the first pitch is not equal to the second pitch. The third luminescent material is located on the substrate, and the color of the third luminescent material is different from the colors of the first and second luminescent materials. The fourth luminescent material is located on the substrate, and the color of the fourth luminescent material is different from the colors of the first, second and third luminescent materials.

本發明一實施例的畫素陣列的製作方法，包括以下步驟。提供基板，基板包括多個底電極。利用第一金屬光罩，於底電極的第一區上形成多個第一發光材料。形成第一發光材料後，於底電極的第二區上形成多個第二發光材料，第二發光材料的其中之一位於第一發光材料之間，第二發光材料的顏色和第一發光材料的顏色相同。形成多個頂電極於第一發光材料及第二發光材料上。A method for manufacturing a pixel array according to an embodiment of the present invention includes the following steps. A substrate is provided that includes a plurality of bottom electrodes. A plurality of first luminescent materials are formed on the first region of the bottom electrode by using the first metal mask. After forming the first luminescent material, a plurality of second luminescent materials are formed on the second region of the bottom electrode, one of the second luminescent materials is located between the first luminescent materials, and the color of the second luminescent material is the same as that of the first luminescent material. of the same color. A plurality of top electrodes are formed on the first light-emitting material and the second light-emitting material.

本發明一實施例的金屬光罩的製作方法，包括以下步驟。以第一光阻圖案為罩幕，蝕刻金屬基板，以於金屬基板的第一表面形成多個第一凹槽。在第一凹槽內填入有機材料。以第二光阻圖案為罩幕，蝕刻金屬基板，以於金屬基板的第二表面形成多個第二凹槽，第一表面與第二表面相對。移除有機材料，使各第一凹槽分別與各第二凹槽相連通以形成多個開口，開口互相錯位。A method for fabricating a metal mask according to an embodiment of the present invention includes the following steps. Using the first photoresist pattern as a mask, the metal substrate is etched to form a plurality of first grooves on the first surface of the metal substrate. Organic material is filled in the first groove. Using the second photoresist pattern as a mask, the metal substrate is etched to form a plurality of second grooves on the second surface of the metal substrate, and the first surface is opposite to the second surface. The organic material is removed, so that each first groove communicates with each second groove to form a plurality of openings, and the openings are dislocated from each other.

本發明一實施例的金屬光罩，包括第一表面及第二表面。第一表面具有多個第一凹槽。第二表面與第一表面相對且具有多個第二凹槽，各第一凹槽與各第二凹槽相連通以形成多個開口，各第二凹槽的寬度不等於各第一凹槽的寬度，開口互相錯位。A metal mask according to an embodiment of the present invention includes a first surface and a second surface. The first surface has a plurality of first grooves. The second surface is opposite to the first surface and has a plurality of second grooves, each first groove communicates with each second groove to form a plurality of openings, and the width of each second groove is not equal to that of each first groove width, the openings are misaligned with each other.

基於上述，在本發明一實施例的畫素陣列及其製作方法中，形成第一發光材料後，於底電極的第二區上形成多個第二發光材料，第二發光材料的其中之一位於第一發光材料之間，第二發光材料的顏色和第一發光材料的顏色相同，可製作高解析度的畫素陣列。Based on the above, in the pixel array and its manufacturing method according to an embodiment of the present invention, after forming the first luminescent material, a plurality of second luminescent materials are formed on the second region of the bottom electrode, one of the second luminescent materials Located between the first luminescent materials, the color of the second luminescent material is the same as that of the first luminescent materials, so that a high-resolution pixel array can be produced.

基於上述，在本發明一實施例的金屬光罩及其製作方法中，由於金屬光罩的第一開口錯位排列，使金屬光罩具有提升的良率。Based on the above, in the metal photomask and the manufacturing method thereof according to an embodiment of the present invention, since the first openings of the metal photomask are misaligned, the metal photomask has improved yield.

第1圖是依照本發明一實施例的畫素陣列10的製作方法的流程的上視示意圖，第2圖是沿著第1圖的剖線A-A’的剖面示意圖，第3圖是沿著第1圖的剖線B-B’的剖面示意圖，第4圖是依照本發明一實施例的畫素陣列10的製作方法的流程的剖面示意圖。請參照第1圖、第2圖、第3圖及第4圖，首先，提供基板100，基板100包括多個底電極102。舉例而言，基板100還包括基底SB及主動元件T。主動元件T位於基底SB上且包括通道層CH、閘極G、源極S與汲極D。閘極G重疊於通道層CH，且閘極G與通道層CH之間夾有閘絕緣層GI。源極S與汲極D位於通道層CH上，且電性連接至通道層CH。Figure 1 is a schematic top view of the process flow of the method for manufacturing the pixel array 10 according to an embodiment of the present invention, Figure 2 is a schematic cross-sectional view along the section line AA' in Figure 1, and Figure 3 is a schematic cross-sectional view along the line AA' in Figure 1. Referring to the schematic cross-sectional view of the section line BB' in FIG. 1 , FIG. 4 is a schematic cross-sectional view of the flow of the manufacturing method of the pixel array 10 according to an embodiment of the present invention. Referring to FIG. 1 , FIG. 2 , FIG. 3 and FIG. 4 , firstly, a substrate 100 is provided, and the substrate 100 includes a plurality of bottom electrodes 102 . For example, the substrate 100 further includes a base SB and an active device T. As shown in FIG. The active device T is located on the substrate SB and includes a channel layer CH, a gate G, a source S and a drain D. The gate G overlaps the channel layer CH, and a gate insulating layer GI is sandwiched between the gate G and the channel layer CH. The source S and the drain D are located on the channel layer CH and are electrically connected to the channel layer CH.

在本實施例中，主動元件T是以底部閘極型的薄膜電晶體為例，但本發明不以此為限。於其他實施例中，主動元件T也可以是頂部閘極型薄膜電晶體。In this embodiment, the active element T is an example of a bottom-gate thin film transistor, but the present invention is not limited thereto. In other embodiments, the active device T may also be a top-gate thin film transistor.

絕緣層104位於主動元件T上，換言之，絕緣層104位於閘絕緣層GI、源極S與汲極D上。底電極102位於絕緣層104上。畫素定義層PDL位於絕緣層104上，且具有開口OP，開口OP重疊於底電極102。底電極102貫穿絕緣層104以電性連接主動元件T的汲極D。The insulating layer 104 is located on the active device T, in other words, the insulating layer 104 is located on the gate insulating layer GI, the source S and the drain D. The bottom electrode 102 is located on the insulating layer 104 . The pixel definition layer PDL is located on the insulating layer 104 and has an opening OP overlapping the bottom electrode 102 . The bottom electrode 102 penetrates through the insulating layer 104 to be electrically connected to the drain D of the active device T. As shown in FIG.

為了方便說明，第1圖中繪示了第一方向d1及第二方向d2，第一方向d1和第二方向d2相交。舉例而言，第一方向d1為橫向方向，第二方向d2為縱向方向，且第一方向d1和第二方向d2互相垂直。然而，本發明不限於此。For the convenience of illustration, the first direction d1 and the second direction d2 are shown in FIG. 1 , and the first direction d1 and the second direction d2 intersect. For example, the first direction d1 is a horizontal direction, the second direction d2 is a longitudinal direction, and the first direction d1 and the second direction d2 are perpendicular to each other. However, the present invention is not limited thereto.

第5圖是第一金屬光罩106的上視示意圖，請一併參照第3圖、第4圖及第5圖，利用第一金屬光罩106，於底電極102的第一區102A上形成多個第一發光材料E1。為了方便說明，第4圖中省略繪示底電極102。第一金屬光罩106具有多個第一開口106a，第一開口106a互相錯位。於本實施例中，進行第一次蒸鍍步驟1000，以形成第一發光材料E1。換言之，蒸鍍源108沿著路徑P1移動，可利用蒸鍍源108於第一開口106a的位置進行第一發光材料E1的蒸鍍。FIG. 5 is a schematic top view of the first metal mask 106. Please refer to FIG. 3, FIG. 4 and FIG. A plurality of first luminescent materials E1. For convenience of illustration, the bottom electrode 102 is omitted in FIG. 4 . The first metal mask 106 has a plurality of first openings 106a, and the first openings 106a are offset from each other. In this embodiment, the first vapor deposition step 1000 is performed to form the first luminescent material E1. In other words, the evaporation source 108 moves along the path P1, and the evaporation source 108 can be used to perform evaporation of the first luminescent material E1 at the position of the first opening 106a.

請回到第1圖及第2圖，於一實施例中，於底電極102上形成多個第三發光材料E3及多個第四發光材料E4，第三及第四發光材料E3、E4的顏色不同。第三發光材料E3與第四發光材料E4交錯配置。然而，本發明不限於此。Please return to Fig. 1 and Fig. 2, in one embodiment, a plurality of third luminescent materials E3 and a plurality of fourth luminescent materials E4 are formed on the bottom electrode 102, the third and fourth luminescent materials E3, E4 The colors are different. The third luminescent material E3 and the fourth luminescent material E4 are alternately arranged. However, the present invention is not limited thereto.

第6圖是依照本發明一實施例的畫素陣列10的製作方法的流程的上視示意圖，第7圖是沿著第6圖的剖線C-C’的剖面示意圖，第8圖是依照本發明一實施例的畫素陣列10的製作方法的流程的剖面示意圖，為了方便說明，第4圖中省略繪示底電極102。接著，請參照第6圖、第7圖及第8圖，形成第一發光材料E1後，於底電極102的第二區102B上形成多個第二發光材料E2，換言之，進行第二次蒸鍍步驟1002，以形成第二發光材料E2。於本實施例中，第二發光材料E2是利用第一金屬光罩106所形成。舉例而言，可移動第一金屬光罩106，使第一開口106a重疊於底電極102的第二區102B。接著，使蒸鍍源108沿著路徑P2移動，利用蒸鍍源108於第一開口106a的位置進行第二發光材料E2的蒸鍍。第二發光材料E2的其中之一位於第一發光材料E1之間，第二發光材料E2的顏色和第一發光材料E1的顏色相同。於本實施例中，進行第一次蒸鍍步驟1000，以形成第一發光材料E1。並且，進行第二次蒸鍍步驟1002，以形成第二發光材料E2。藉由相異的蒸鍍步驟來分別形成第一發光材料E1及第二發光材料E2，可製作高解析度的畫素陣列10。Fig. 6 is a schematic top view of the process flow of the manufacturing method of the pixel array 10 according to an embodiment of the present invention, Fig. 7 is a schematic cross-sectional view along the section line CC' in Fig. 6, and Fig. 8 is a schematic diagram according to The schematic cross-sectional view of the process flow of the manufacturing method of the pixel array 10 according to an embodiment of the present invention, for convenience of description, the bottom electrode 102 is omitted in FIG. 4 . Next, please refer to FIG. 6, FIG. 7 and FIG. 8. After forming the first luminescent material E1, a plurality of second luminescent materials E2 are formed on the second region 102B of the bottom electrode 102, in other words, the second evaporation is performed. Plating step 1002, to form a second luminescent material E2. In this embodiment, the second luminescent material E2 is formed by using the first metal mask 106 . For example, the first metal mask 106 can be moved so that the first opening 106 a overlaps the second region 102B of the bottom electrode 102 . Next, the evaporation source 108 is moved along the path P2, and the evaporation source 108 is used to perform evaporation of the second luminescent material E2 at the position of the first opening 106a. One of the second luminescent materials E2 is located between the first luminescent materials E1, and the color of the second luminescent materials E2 is the same as that of the first luminescent materials E1. In this embodiment, the first vapor deposition step 1000 is performed to form the first luminescent material E1. Furthermore, a second vapor deposition step 1002 is performed to form a second luminescent material E2. By forming the first light-emitting material E1 and the second light-emitting material E2 through different evaporation steps, the high-resolution pixel array 10 can be produced.

請回到第5圖，由於第一金屬光罩106的第一開口106a錯位排列，可增加第一開口106a的間距S1。換言之，第一開口106a之間的最小距離增加。藉此，第一金屬光罩106具有提升的良率。Please return to FIG. 5 , since the first openings 106 a of the first metal mask 106 are arranged in a misaligned manner, the spacing S1 of the first openings 106 a can be increased. In other words, the minimum distance between the first openings 106a increases. Accordingly, the first metal mask 106 has improved yield.

第9圖是依照本發明一實施例的畫素陣列10的製作方法的流程的剖面示意圖，請參照第9圖，形成多個頂電極110於第一發光材料E1及第二發光材料E2上，使底電極102、第一發光材料E1及頂電極110共同構成發光單元112，並且使底電極102、第二發光材料E2及頂電極110共同構成發光單元114。如前所述，第二發光材料E2的顏色和第一發光材料E1的顏色相同，因此，發光單元112、114發出相同顏色的光。於一實施例中，頂電極110還形成於第三發光材料E3及第四發光材料E4上(未示)。FIG. 9 is a schematic cross-sectional view of the process flow of the manufacturing method of the pixel array 10 according to an embodiment of the present invention. Referring to FIG. 9, a plurality of top electrodes 110 are formed on the first luminescent material E1 and the second luminescent material E2, The bottom electrode 102 , the first luminescent material E1 and the top electrode 110 together form a light emitting unit 112 , and the bottom electrode 102 , the second light emitting material E2 and the top electrode 110 together form a light emitting unit 114 . As mentioned above, the color of the second luminescent material E2 is the same as that of the first luminescent material E1, therefore, the light emitting units 112, 114 emit light of the same color. In one embodiment, the top electrode 110 is also formed on the third light emitting material E3 and the fourth light emitting material E4 (not shown).

於其他實施例中，第二發光材料E2和第一發光材料E1是透過相異的金屬光罩所形成，舉例而言，第10圖是依照本發明一實施例的第二金屬光罩116的上視示意圖，第11圖是依照本發明另一實施例的畫素陣列10a的製作方法的剖面示意圖。請一併參照第10圖及第11圖，第二發光材料E2是利用第二金屬光罩116所形成，第二金屬光罩116具有多個第二開口116a，第二開口116a互相錯位，第二開口116a的排列方式和第一開口106a的排列方式不同。於本實施例中，利用第一金屬光罩106進行第一次蒸鍍步驟1000(見第4圖)，以形成第一發光材料E1。接著，利用第二金屬光罩116進行第二次蒸鍍步驟1002a，以形成第二發光材料E2。藉由相異的蒸鍍步驟來分別形成第一發光材料E1及第二發光材料E2，可製作高解析度的畫素陣列10a。In other embodiments, the second luminescent material E2 and the first luminescent material E1 are formed through different metal masks. For example, FIG. 10 shows a second metal mask 116 according to an embodiment of the present invention. As a schematic top view, FIG. 11 is a schematic cross-sectional view of a manufacturing method of a pixel array 10a according to another embodiment of the present invention. Please refer to FIG. 10 and FIG. 11 together. The second luminescent material E2 is formed by using a second metal mask 116. The second metal mask 116 has a plurality of second openings 116a. The second openings 116a are misaligned with each other. The arrangement of the second openings 116a is different from the arrangement of the first openings 106a. In this embodiment, the first evaporation step 1000 (see FIG. 4 ) is performed using the first metal mask 106 to form the first luminescent material E1. Next, a second vapor deposition step 1002a is performed using the second metal mask 116 to form the second luminescent material E2. By forming the first luminescent material E1 and the second luminescent material E2 through different evaporation steps, the high-resolution pixel array 10 a can be produced.

請回到第6圖，畫素陣列10包括基板100、多個第一發光材料E1、多個第二發光材料E2、多個第三發光材料E3及多個第四發光材料E4。第一發光材料E1、第二發光材料E2、第三發光材料E3及第四發光材料E4位於基板100上。第二發光材料E2的顏色和第一發光材料E1的顏色相同，第一發光材料E1和第二發光材料E2在一方向上交替地以第一間距a1及第二間距a2排列。舉例而言，第一發光材料E1和第二發光材料E2在第一方向d1上交替地以第一間距a1及第二間距a2排列。換言之，第二發光材料E2在第一方向d1上與兩個第一發光材料E1相鄰，第二發光材料E2和與其相鄰之第一發光材料E1的其中之一在第一方向d1上具有第一間距a1，並和與其相鄰之第一發光材料E1的其中另一在第一方向d1上具有第二間距a2。Please return to FIG. 6 , the pixel array 10 includes a substrate 100 , a plurality of first luminescent materials E1 , a plurality of second luminescent materials E2 , a plurality of third luminescent materials E3 and a plurality of fourth luminescent materials E4 . The first luminescent material E1 , the second luminescent material E2 , the third luminescent material E3 and the fourth luminescent material E4 are located on the substrate 100 . The color of the second luminescent material E2 is the same as that of the first luminescent material E1, and the first luminescent material E1 and the second luminescent material E2 are alternately arranged in a direction with a first pitch a1 and a second pitch a2. For example, the first luminescent materials E1 and the second luminescent materials E2 are alternately arranged in the first direction d1 with a first pitch a1 and a second pitch a2. In other words, the second luminescent material E2 is adjacent to two first luminescent materials E1 in the first direction d1, and one of the second luminescent material E2 and the adjacent first luminescent material E1 has The first distance a1, and the other one of the adjacent first light-emitting materials E1 have a second distance a2 in the first direction d1.

由於是藉由相異的蒸鍍步驟來分別形成第一發光材料E1及第二發光材料E2，因此，第一間距a1不等於第二間距a2。如前所述，藉由相異的蒸鍍步驟來分別形成第一發光材料E1及第二發光材料E2，可製作高解析度的畫素陣列10，於本實施例中，第一間距a1大於第二間距a2。Since the first luminescent material E1 and the second luminescent material E2 are respectively formed by different evaporation steps, the first distance a1 is not equal to the second distance a2. As mentioned above, the first light-emitting material E1 and the second light-emitting material E2 are respectively formed by different vapor deposition steps, and a high-resolution pixel array 10 can be produced. In this embodiment, the first distance a1 is greater than The second distance a2.

於本實施例中，第一、第二、第三及第四發光材料E1、E2、E3、E4的顏色選自藍色、紅色及綠色之集合，以使畫素陣列10可顯示全彩畫面，但不以此為限。In this embodiment, the colors of the first, second, third, and fourth luminescent materials E1, E2, E3, and E4 are selected from a set of blue, red, and green, so that the pixel array 10 can display a full-color picture , but not limited to this.

第12圖至第16圖是依照本發明一實施例的金屬光罩200的製作方法的流程的剖面示意圖。請先參照第12圖，形成第一光阻圖案204及第二光阻圖案206於金屬基板202上。接著，請參照第13圖，以第一光阻圖案204為罩幕，蝕刻金屬基板202，以於金屬基板202的第一表面202a形成多個第一凹槽R1。第一凹槽R1可用於定位接下來要形成的第二凹槽R2(見第15圖)。FIG. 12 to FIG. 16 are schematic cross-sectional views of the process flow of the manufacturing method of the metal mask 200 according to an embodiment of the present invention. Referring to FIG. 12 first, a first photoresist pattern 204 and a second photoresist pattern 206 are formed on the metal substrate 202 . Next, referring to FIG. 13 , the metal substrate 202 is etched using the first photoresist pattern 204 as a mask to form a plurality of first grooves R1 on the first surface 202 a of the metal substrate 202 . The first groove R1 can be used to position the second groove R2 to be formed next (see FIG. 15 ).

請參照第14圖，在第一凹槽R1內填入有機材料208。接著，請參照第15圖，以第二光阻圖案206為罩幕，蝕刻金屬基板202，以於金屬基板202的第二表面202b形成多個第二凹槽R2，第一表面202a與第二表面202b相對。換言之，第二表面202b具有多個第二凹槽R2。接著，請參照第16圖，移除有機材料208，使各第一凹槽R1分別與各第二凹槽R2相連通以形成多個開口210，開口210互相錯位。由於開口210互相錯位，可增加開口210的間距S2。藉此，在蝕刻金屬基板202時，可避免開口210過近造成開口210之間的第二表面202b消失，而使相鄰的開口210連通。如此一來，金屬光罩200具有提升的良率。Referring to FIG. 14, the organic material 208 is filled in the first groove R1. Next, referring to FIG. 15, the metal substrate 202 is etched with the second photoresist pattern 206 as a mask to form a plurality of second grooves R2 on the second surface 202b of the metal substrate 202. The first surface 202a and the second Surface 202b is opposite. In other words, the second surface 202b has a plurality of second grooves R2. Next, referring to FIG. 16 , the organic material 208 is removed, so that each first groove R1 communicates with each second groove R2 to form a plurality of openings 210 , and the openings 210 are displaced from each other. Since the openings 210 are misaligned with each other, the spacing S2 of the openings 210 can be increased. Thereby, when the metal substrate 202 is etched, the second surface 202 b between the openings 210 can be avoided from being too close to each other, so that adjacent openings 210 can be communicated. In this way, the metal mask 200 has improved yield.

於本實施例，各第二凹槽R2的寬度W2不等於各第一凹槽R1的寬度W1。舉例而言，第二凹槽R2的寬度W2大於第一凹槽R1的寬度W1。In this embodiment, the width W2 of each second groove R2 is not equal to the width W1 of each first groove R1. For example, the width W2 of the second groove R2 is greater than the width W1 of the first groove R1 .

綜上所述，在本發明一實施例的畫素陣列及其製作方法中，形成第一發光材料後，於底電極的第二區上形成多個第二發光材料，第二發光材料的其中之一位於第一發光材料之間，第二發光材料的顏色和第一發光材料的顏色相同，由於是藉由相異的蒸鍍步驟來分別形成第一發光材料及第二發光材料，因此，第一間距不等於第二間距。藉由相異的蒸鍍步驟來分別形成第一發光材料及第二發光材料，可製作高解析度的畫素陣列。在本發明一實施例的金屬光罩及其製作方法中，由於金屬光罩的第一開口錯位排列，可增加第一開口的間距。換言之，第一開口之間的最小距離增加。藉此，金屬光罩具有提升的良率。To sum up, in the pixel array and its manufacturing method according to an embodiment of the present invention, after forming the first luminescent material, a plurality of second luminescent materials are formed on the second region of the bottom electrode, and among the second luminescent materials One of them is located between the first luminescent material, the color of the second luminescent material is the same as that of the first luminescent material, since the first luminescent material and the second luminescent material are formed respectively by different evaporation steps, therefore, The first spacing is not equal to the second spacing. By forming the first luminescent material and the second luminescent material respectively through different evaporation steps, a high-resolution pixel array can be produced. In the metal photomask and its manufacturing method according to an embodiment of the present invention, since the first openings of the metal photomask are arranged in dislocation, the pitch of the first openings can be increased. In other words, the minimum distance between the first openings increases. Accordingly, the metal mask has improved yield.

10,10a:畫素陣列 100:基板 102:底電極 102A:第一區 102B:第二區 104:絕緣層 106:第一金屬光罩 106a:第一開口 108:蒸鍍源 110:頂電極 112,114:發光單元 116:第二金屬光罩 116a:第二開口 200:金屬光罩 202:金屬基板 202a:第一表面 202b:第二表面 204:第一光阻圖案 206:第二光阻圖案 208:有機材料 210:開口 1000:第一次蒸鍍步驟 1002,1002a:第二次蒸鍍步驟 A-A’,B-B’,C-C’:剖線 a1:第一間距 a2:第二間距 CH:通道層 D:汲極 d1:第一方向 d2:第二方向 E1:第一發光材料 E2:第二發光材料 E3:第三發光材料 E4:第四發光材料 G:閘極 GI:閘絕緣層 OP:開口 P1,P2:路徑 PDL:畫素定義層 R1:第一凹槽 R2:第二凹槽 S:源極 SB:基底 S1,S2:間距 T:主動元件 W1,W2:寬度 10,10a: pixel array 100: Substrate 102: Bottom electrode 102A: District 1 102B: Second District 104: insulation layer 106: The first metal mask 106a: first opening 108: Evaporation source 110: top electrode 112,114: light emitting unit 116: Second metal mask 116a: second opening 200: metal mask 202: metal substrate 202a: first surface 202b: second surface 204: The first photoresist pattern 206: the second photoresist pattern 208: Organic materials 210: opening 1000: the first evaporation step 1002, 1002a: second evaporation step A-A', B-B', C-C': broken line a1: first spacing a2: second spacing CH: channel layer D: drain d1: the first direction d2: second direction E1: the first luminescent material E2: Second luminescent material E3: The third luminescent material E4: The fourth luminescent material G: gate GI: gate insulation layer OP: opening P1, P2: path PDL: Pixel Definition Layer R1: first groove R2: second groove S: source SB: base S1, S2: Spacing T: active component W1, W2: width

閱讀以下詳細敘述並搭配對應之圖式，可了解本揭露之多個樣態。需留意的是，圖式中的多個特徵並未依照該業界領域之標準作法繪製實際比例。事實上，所述之特徵的尺寸可以任意的增加或減少以利於討論的清晰性。 第1圖是依照本發明一實施例的畫素陣列的製作方法的流程的上視示意圖。 第2圖是沿著第1圖的剖線A-A’的剖面示意圖。 第3圖是沿著第1圖的剖線B-B’的剖面示意圖。 第4圖是依照本發明一實施例的畫素陣列的製作方法的流程的剖面示意圖。 第5圖是第一金屬光罩的上視示意圖。 第6圖是依照本發明一實施例的畫素陣列的製作方法的流程的上視示意圖。 第7圖是沿著第6圖的剖線C-C’的剖面示意圖。 第8圖是依照本發明一實施例的畫素陣列的製作方法的流程的剖面示意圖。 第9圖是依照本發明一實施例的畫素陣列的製作方法的流程的剖面示意圖。 第10圖是依照本發明一實施例的第二金屬光罩的上視示意圖。 第11圖是依照本發明另一實施例的畫素陣列10a的製作方法的剖面示意圖。 第12圖至第16圖是依照本發明一實施例的金屬光罩的製作方法的流程的剖面示意圖。 Read the following detailed description and match the corresponding diagrams to understand the multiple aspects of this disclosure. It should be noted that many features in the drawings are not drawn to scale in accordance with standard practice in this industry. In fact, the dimensions of the described features may be arbitrarily increased or decreased for clarity of discussion. FIG. 1 is a schematic top view of the flow of a method for manufacturing a pixel array according to an embodiment of the present invention. Fig. 2 is a schematic cross-sectional view along line A-A' of Fig. 1 . Fig. 3 is a schematic cross-sectional view along the section line B-B' in Fig. 1 . FIG. 4 is a schematic cross-sectional view of the flow of a method for manufacturing a pixel array according to an embodiment of the present invention. FIG. 5 is a schematic top view of the first metal mask. FIG. 6 is a schematic top view of the flow of a method for manufacturing a pixel array according to an embodiment of the present invention. Fig. 7 is a schematic cross-sectional view along line C-C' in Fig. 6 . FIG. 8 is a schematic cross-sectional view of the flow of a method for manufacturing a pixel array according to an embodiment of the present invention. FIG. 9 is a schematic cross-sectional view of the flow of a method for manufacturing a pixel array according to an embodiment of the present invention. FIG. 10 is a schematic top view of a second metal mask according to an embodiment of the present invention. FIG. 11 is a schematic cross-sectional view of a manufacturing method of a pixel array 10a according to another embodiment of the present invention. FIG. 12 to FIG. 16 are schematic cross-sectional views of the process flow of the metal mask manufacturing method according to an embodiment of the present invention.

國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic deposit information (please note in order of depositor, date, and number) none Overseas storage information (please note in order of storage country, institution, date, and number) none

10:畫素陣列 10:Pixel array

100:基板 100: Substrate

C-C’:剖線 C-C': crossed line

a1:第一間距 a1: first spacing

a2:第二間距 a2: second spacing

d1:第一方向 d1: the first direction

d2:第二方向 d2: second direction

E1:第一發光材料 E1: the first luminescent material

E2:第二發光材料 E2: Second luminescent material

E3:第三發光材料 E3: The third luminescent material

E4:第四發光材料 E4: The fourth luminescent material

Claims (10)

一種畫素陣列，包括： 一基板； 多個第一發光材料，位於該基板上；及 多個第二發光材料，位於該基板上，其中該些第二發光材料的顏色和該些第一發光材料的顏色相同，該些第一發光材料和該些第二發光材料在一方向上交替地以一第一間距及一第二間距排列，該第一間距不等於該第二間距； 多個第三發光材料，位於該基板上，其中該些第三發光材料的顏色不同於該些第一及該些第二發光材料的顏色；及 多個第四發光材料，位於該基板上，其中該些第四發光材料的顏色不同於該些第一、第二、第三發光材料的顏色。 A pixel array comprising: a substrate; a plurality of first luminescent materials on the substrate; and A plurality of second luminescent materials are located on the substrate, wherein the colors of the second luminescent materials are the same as those of the first luminescent materials, and the first luminescent materials and the second luminescent materials alternately in one direction arranged with a first pitch and a second pitch, the first pitch being not equal to the second pitch; a plurality of third luminescent materials on the substrate, wherein the colors of the third luminescent materials are different from the colors of the first and the second luminescent materials; and A plurality of fourth luminescent materials are located on the substrate, wherein the colors of the fourth luminescent materials are different from those of the first, second and third luminescent materials. 如請求項1所述之畫素陣列，其中該些第一、第二、第三及第四發光材料的顏色選自藍色、紅色及綠色之集合。The pixel array according to claim 1, wherein the colors of the first, second, third and fourth luminescent materials are selected from the group of blue, red and green. 一種畫素陣列的製作方法，包括： 提供一基板，該基板包括多個底電極； 利用一第一金屬光罩，於該些底電極的一第一區上形成多個第一發光材料； 形成該些第一發光材料後，於該些底電極的一第二區上形成多個第二發光材料，該些第二發光材料的其中之一位於該些第一發光材料之間，該些第二發光材料的顏色和該些第一發光材料的顏色相同；及 形成多個頂電極於該些第一發光材料及該些第二發光材料上。 A method for making a pixel array, comprising: providing a substrate comprising a plurality of bottom electrodes; using a first metal mask to form a plurality of first luminescent materials on a first region of the bottom electrodes; After forming the first luminescent materials, a plurality of second luminescent materials are formed on a second region of the bottom electrodes, one of the second luminescent materials is located between the first luminescent materials, and the the color of the second luminescent material is the same as that of the first luminescent materials; and A plurality of top electrodes are formed on the first luminescent materials and the second luminescent materials. 如請求項3所述之方法，其中該第一金屬光罩具有多個第一開口，該些第一開口互相錯位。The method as claimed in claim 3, wherein the first metal mask has a plurality of first openings, and the first openings are offset from each other. 如請求項3所述之方法，其中該些第二發光材料是利用該第一金屬光罩所形成。The method as claimed in claim 3, wherein the second luminescent materials are formed by using the first metal mask. 如請求項3所述之方法，其中該些第二發光材料是利用一第二金屬光罩所形成，該第二金屬光罩具有多個第二開口，該些第二開口互相錯位，該些第二開口的排列方式和該些第一開口的排列方式不同。The method as described in claim 3, wherein the second luminescent materials are formed by using a second metal mask, the second metal mask has a plurality of second openings, the second openings are misaligned, the The arrangement of the second openings is different from that of the first openings. 如請求項3所述之方法，進一步包括： 於該些底電極上形成多個第三發光材料及多個第四發光材料，該些第三及該些第四發光材料的顏色不同。 The method as described in claim 3, further comprising: A plurality of third luminescent materials and a plurality of fourth luminescent materials are formed on the bottom electrodes, and the colors of the third and fourth luminescent materials are different. 一種金屬光罩的製作方法，包括： 以一第一光阻圖案為罩幕，蝕刻一金屬基板，以於該金屬基板的一第一表面形成多個第一凹槽； 在該些第一凹槽內填入一有機材料； 以一第二光阻圖案為罩幕，蝕刻該金屬基板，以於該金屬基板的一第二表面形成多個第二凹槽，該第一表面與該第二表面相對；及 移除該有機材料，使各該第一凹槽分別與各該第二凹槽相連通以形成多個開口，該些開口互相錯位。 A method for manufacturing a metal mask, comprising: Using a first photoresist pattern as a mask, etching a metal substrate to form a plurality of first grooves on a first surface of the metal substrate; Filling an organic material into the first grooves; Using a second photoresist pattern as a mask, etching the metal substrate to form a plurality of second grooves on a second surface of the metal substrate, the first surface is opposite to the second surface; and The organic material is removed, so that each of the first grooves communicates with each of the second grooves to form a plurality of openings, and the openings are displaced from each other. 如請求項8所述之方法，其中各該第二凹槽的寬度不等於各該第一凹槽的寬度。The method as claimed in claim 8, wherein the width of each of the second grooves is not equal to the width of each of the first grooves. 一種金屬光罩，包括： 一第一表面，具有多個第一凹槽；及 一第二表面，與該第一表面相對，且具有多個第二凹槽，各該第一凹槽與各該第二凹槽相連通以形成多個開口，各該第二凹槽的寬度不等於各該第一凹槽的寬度，該些開口互相錯位。 A metal photomask comprising: a first surface having a plurality of first grooves; and A second surface, opposite to the first surface, has a plurality of second grooves, each of the first grooves communicates with each of the second grooves to form a plurality of openings, and the width of each of the second grooves is Not equal to the width of each of the first grooves, the openings are misaligned with each other.
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