CN114068665A - Pixel array and manufacturing method thereof, metal mask and manufacturing method thereof - Google Patents

Pixel array and manufacturing method thereof, metal mask and manufacturing method thereof Download PDF

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Publication number
CN114068665A
CN114068665A CN202111376367.XA CN202111376367A CN114068665A CN 114068665 A CN114068665 A CN 114068665A CN 202111376367 A CN202111376367 A CN 202111376367A CN 114068665 A CN114068665 A CN 114068665A
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China
Prior art keywords
materials
substrate
openings
luminescent materials
metal mask
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CN202111376367.XA
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Chinese (zh)
Inventor
江南辉
莫尧安
陈信宏
林居广
范耀中
赖敬权
林继民
黄秉修
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AU Optronics Corp
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AU Optronics Corp
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Publication of CN114068665A publication Critical patent/CN114068665A/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A pixel array and a manufacturing method thereof, a metal mask and a manufacturing method thereof are provided, wherein the pixel array comprises a substrate and a plurality of first luminescent materials, a plurality of second luminescent materials, a plurality of third luminescent materials and a plurality of fourth luminescent materials which are arranged on the substrate. The color of the second luminescent material is the same as the color of the first luminescent material, the first luminescent material and the second luminescent material are alternately arranged with a first pitch and a second pitch in a direction, and the first pitch is not equal to the second pitch. The color of the third luminescent material is different from the colors of the first and second luminescent materials. The color of the fourth luminescent material is different from the colors of the first, second and third luminescent materials.

Description

Pixel array and manufacturing method thereof, metal mask and manufacturing method thereof
Technical Field
The invention relates to a pixel array and a manufacturing method thereof, and relates to a metal mask and a manufacturing method thereof.
Background
An active matrix organic light-emitting diode (AMOLED) is one of the key items in the development of display technology, and in the current manufacturing method, an organic light-emitting material is plated on an array substrate by an evaporation method, and the organic light-emitting material is evaporated at a correct position through a metal mask.
The metal mask is formed by etching, for example, by using a second etching process to form the opening. In order to cope with high resolution products, the density of the openings needs to be increased. However, the shorter and shorter distance between the openings is likely to cause the adjacent openings to communicate during etching, thereby reducing the yield of the metal mask. Therefore, how to increase the yield and meet the requirement of high resolution is an important issue for those skilled in the art.
Disclosure of Invention
The invention provides a pixel array and a manufacturing method thereof, and provides a metal mask and a manufacturing method thereof, which can manufacture a high-resolution product.
The pixel array of an embodiment of the invention includes a substrate, a plurality of first light-emitting materials, a plurality of second light-emitting materials, a plurality of third light-emitting materials, and a plurality of fourth light-emitting materials. The first light-emitting material is located on the substrate. The second luminescent material is located on the substrate. The color of the second luminescent material is the same as the color of the first luminescent material, the first luminescent material and the second luminescent material are alternately arranged with a first pitch and a second pitch in a direction, and the first pitch is not equal to the second pitch. The third luminescent material is located on the substrate, and the color of the third luminescent material is different from the colors of the first and second luminescent materials. The fourth luminescent material is located on the substrate, and the color of the fourth luminescent material is different from the colors of the first, second and third luminescent materials.
The method for manufacturing the pixel array of the embodiment of the invention comprises the following steps. A substrate is provided, the substrate including a plurality of bottom electrodes. A plurality of first light emitting materials are formed on the first region of the bottom electrode by using a first metal mask. After the first light-emitting materials are formed, a plurality of second light-emitting materials are formed on the second area of the bottom electrode, one of the second light-emitting materials is located between the first light-emitting materials, and the color of the second light-emitting materials is the same as that of the first light-emitting materials. A plurality of top electrodes are formed on the first luminescent material and the second luminescent material.
The method for manufacturing a metal mask according to an embodiment of the present invention includes the following steps. And etching the metal substrate by using the first photoresist pattern as a mask to form a plurality of first grooves on the first surface of the metal substrate. And filling organic materials into the first groove. And etching the metal substrate by using the second photoresist pattern as a mask to form a plurality of second grooves on the second surface of the metal substrate, wherein the first surface is opposite to the second surface. Removing the organic material to make each first groove respectively communicate with each second groove to form a plurality of openings, wherein the openings are staggered.
The metal mask of an embodiment of the invention includes a first surface and a second surface. The first surface has a plurality of first grooves. The second surface is opposite to the first surface and is provided with a plurality of second grooves, each first groove is communicated with each second groove to form a plurality of openings, the width of each second groove is not equal to the width of each first groove, and the openings are staggered.
Based on the above, in the pixel array and the manufacturing method thereof according to the embodiment of the invention, after the first light emitting material is formed, the plurality of second light emitting materials are formed on the second region of the bottom electrode, one of the second light emitting materials is located between the first light emitting materials, and the color of the second light emitting material is the same as the color of the first light emitting material, so that the pixel array with high resolution can be manufactured.
Based on the above, in the metal mask and the manufacturing method thereof according to the embodiment of the invention, the first openings of the metal mask are arranged in a staggered manner, so that the metal mask has an improved yield.
Drawings
Various aspects of the disclosure can be understood from the following detailed description when read in conjunction with the accompanying drawings. It is noted that the various features of the drawings are not to scale in accordance with standard practice in the industry. In fact, the dimensions of the features described may be arbitrarily increased or reduced for clarity of discussion.
Fig. 1 is a top view of a flow chart of a method for manufacturing a pixel array according to an embodiment of the invention.
Fig. 2 is a schematic sectional view taken along the sectional line a-a' of fig. 1.
Fig. 3 is a schematic sectional view taken along the sectional line B-B' of fig. 1.
Fig. 4 is a cross-sectional view illustrating a flow of a method for fabricating a pixel array according to an embodiment of the invention.
Fig. 5 is a top view of a first metal mask.
Fig. 6 is a top view of a flow chart of a method for fabricating a pixel array according to an embodiment of the invention.
Fig. 7 is a schematic sectional view taken along the sectional line C-C of fig. 6.
Fig. 8 is a cross-sectional view illustrating a flow of a method for fabricating a pixel array according to an embodiment of the invention.
Fig. 9 is a cross-sectional view illustrating a flow of a method for fabricating a pixel array according to an embodiment of the invention.
FIG. 10 is a top view of a second metal mask in accordance with one embodiment of the present invention.
Fig. 11 is a cross-sectional view illustrating a method for fabricating a pixel array 10a according to another embodiment of the invention.
Fig. 12 to 16 are schematic cross-sectional views illustrating a process of a method for manufacturing a metal mask according to an embodiment of the invention.
Description of reference numerals:
10,10 a: pixel array
100: substrate
102: bottom electrode
102A: first region
102B: second region
104: insulating layer
106: first metal mask
106 a: first opening
108: evaporation source
110: top electrode
112,114: light emitting unit
116: second metal mask
116 a: second opening
200: metal mask
202: metal substrate
202 a: first surface
202 b: second surface
204: first photoresist pattern
206: second photoresist pattern
208: organic materials
210: opening of the container
1000: first evaporation step
1002,1002 a: second evaporation step
A-A ', B-B ', C-C ': cutting line
a 1: first interval
a 2: second pitch
CH: channel layer
D: drain electrode
d 1: a first direction
d 2: second direction
E1: first luminescent material
E2: a second luminescent material
E3: a third luminescent material
E4: a fourth luminescent material
G: grid electrode
GI: gate insulating layer
OP: opening of the container
P1, P2: route of travel
PDL: pixel definition layer
R1: the first groove
R2: second groove
S: source electrode
SB: substrate
S1, S2: distance between each other
T: active component
W1, W2: width of
Detailed Description
Fig. 1 is a top view of a flow of a method for fabricating a pixel array 10 according to an embodiment of the invention, fig. 2 is a schematic cross-sectional view taken along a sectional line a-a 'of fig. 1, fig. 3 is a schematic cross-sectional view taken along a sectional line B-B' of fig. 1, and fig. 4 is a schematic cross-sectional view of a flow of a method for fabricating a pixel array 10 according to an embodiment of the invention. Referring to fig. 1, fig. 2, fig. 3 and fig. 4, first, a substrate 100 is provided, wherein the substrate 100 includes a plurality of bottom electrodes 102. For example, the substrate 100 further includes a substrate SB and an active device T. The active device T is disposed on the substrate SB and includes a channel layer CH, a gate G, a source S and a drain D. The gate G overlaps the channel layer CH, and a gate insulating layer GI is interposed between the gate G and the channel layer CH. The source S and the drain D are located on the channel layer CH and electrically connected to the channel layer CH.
In the present embodiment, the active device T is a bottom gate thin film transistor, but the invention is not limited thereto. In other embodiments, the active device T may also be a top gate thin film transistor.
The insulating layer 104 is disposed on the active device T, in other words, the insulating layer 104 is disposed on the gate insulating layer GI, the source S and the drain D. The bottom electrode 102 is located on the insulating layer 104. The pixel defining layer PDL is disposed on the insulating layer 104 and has an opening OP, and the opening OP overlaps the bottom electrode 102. The bottom electrode 102 penetrates the insulating layer 104 to electrically connect to the drain D of the active device T.
For convenience of illustration, the first direction d1 and the second direction d2 are shown in fig. 1, and the first direction d1 and the second direction d2 intersect. For example, the first direction d1 is a transverse direction, the second direction d2 is a longitudinal direction, and the first direction d1 and the second direction d2 are perpendicular to each other. However, the present invention is not limited thereto.
Fig. 5 is a top view of the first metal mask 106, and referring to fig. 3, fig. 4 and fig. 5, a plurality of first light-emitting materials E1 are formed on the first region 102A of the bottom electrode 102 by using the first metal mask 106. For convenience of explanation, the bottom electrode 102 is omitted from fig. 4. The first metal mask 106 has a plurality of first openings 106a, and the first openings 106a are offset from each other. In this embodiment, a first evaporation step 1000 is performed to form a first luminescent material E1. In other words, the evaporation source 108 moves along the path P1, and the evaporation source 108 can be used to evaporate the first luminescent material E1 at the position of the first opening 106 a.
Referring back to fig. 1 and fig. 2, in an embodiment, a plurality of third phosphors E3 and a plurality of fourth phosphors E4 are formed on the bottom electrode 102, and the third and fourth phosphors E3 and E4 have different colors. The third emitting material E3 is staggered with the fourth emitting material E4. However, the present invention is not limited thereto.
Fig. 6 is a top view of a flow of a method for fabricating the pixel array 10 according to an embodiment of the invention, fig. 7 is a schematic cross-sectional view taken along a cross-sectional line C-C' of fig. 6, fig. 8 is a schematic cross-sectional view of a flow of a method for fabricating the pixel array 10 according to an embodiment of the invention, and the bottom electrode 102 is omitted from fig. 4 for convenience of description. Next, referring to fig. 6, 7 and 8, after the first luminescent material E1 is formed, a plurality of second luminescent materials E2 are formed on the second region 102B of the bottom electrode 102, in other words, a second evaporation step 1002 is performed to form a second luminescent material E2. In the present embodiment, the second luminescent material E2 is formed by using the first metal mask 106. For example, the first metal mask 106 may be moved such that the first opening 106a overlaps the second region 102B of the bottom electrode 102. Next, the vapor deposition source 108 is moved along the path P2, and the second light-emitting material E2 is vapor-deposited at the position of the first opening 106a by the vapor deposition source 108. One of the second emitting materials E2 is positioned between the first emitting materials E1, and the color of the second emitting material E2 is the same as the color of the first emitting material E1. In this embodiment, a first evaporation step 1000 is performed to form a first luminescent material E1. Further, a second evaporation step 1002 is performed to form a second light emitting material E2. The first light-emitting material E1 and the second light-emitting material E2 are formed by different evaporation steps, whereby the pixel array 10 with high resolution can be manufactured.
Referring back to fig. 5, since the first openings 106a of the first metal mask 106 are arranged in a staggered manner, the spacing S1 of the first openings 106a can be increased. In other words, the minimum distance between the first openings 106a increases. Therefore, the first metal mask 106 has an improved yield.
Fig. 9 is a cross-sectional view illustrating a flow of a method for manufacturing a pixel array 10 according to an embodiment of the invention, please refer to fig. 9, in which a plurality of top electrodes 110 are formed on the first luminescent material E1 and the second luminescent material E2, such that the bottom electrode 102, the first luminescent material E1, and the top electrode 110 jointly form a luminescent unit 112, and the bottom electrode 102, the second luminescent material E2, and the top electrode 110 jointly form a luminescent unit 114. As described above, the color of the second emitting material E2 is the same as the color of the first emitting material E1, and thus, the light emitting cells 112 and 114 emit light of the same color. In one embodiment, the top electrode 110 is further formed on the third emitting material E3 and the fourth emitting material E4 (not shown).
In other embodiments, the second luminescent material E2 and the first luminescent material E1 are formed by different metal masks, for example, fig. 10 is a top view of the second metal mask 116 according to an embodiment of the invention, and fig. 11 is a cross-sectional view of a method for manufacturing the pixel array 10a according to another embodiment of the invention. Referring to fig. 10 and 11, the second light emitting material E2 is formed by using a second metal mask 116, the second metal mask 116 has a plurality of second openings 116a, the second openings 116a are offset from each other, and the arrangement of the second openings 116a is different from the arrangement of the first openings 106 a. In the present embodiment, a first evaporation step 1000 (see fig. 4) is performed by using the first metal mask 106 to form the first luminescent material E1. Next, a second evaporation step 1002a is performed using the second metal mask 116 to form a second light emitting material E2. The first light-emitting material E1 and the second light-emitting material E2 are formed by different evaporation steps, whereby the pixel array 10a with high resolution can be manufactured.
Referring back to fig. 6, the pixel array 10 includes a substrate 100, a plurality of first light emitting materials E1, a plurality of second light emitting materials E2, a plurality of third light emitting materials E3, and a plurality of fourth light emitting materials E4. The first emitting material E1, the second emitting material E2, the third emitting material E3 and the fourth emitting material E4 are located on the substrate 100. The color of the second emitting material E2 is the same as that of the first emitting material E1, and the first emitting material E1 and the second emitting material E2 are alternately arranged at the first pitch a1 and the second pitch a2 in one direction. For example, the first and second luminescent materials E1 and E2 are alternately arranged at a first pitch a1 and a second pitch a2 in the first direction d 1. In other words, the second luminescent material E2 is adjacent to two first luminescent materials E1 in the first direction d1, one of the second luminescent material E2 and the first luminescent material E1 adjacent thereto has a first spacing a1 in the first direction d1, and the other of the first luminescent material E1 adjacent thereto has a second spacing a2 in the first direction d 1.
Since the first emitting material E1 and the second emitting material E2 are formed by different evaporation steps, the first pitch a1 is not equal to the second pitch a 2. As described above, the first light emitting material E1 and the second light emitting material E2 are formed by different evaporation steps, so that the pixel array 10 with high resolution can be manufactured, in the embodiment, the first pitch a1 is greater than the second pitch a 2.
In the present embodiment, the colors of the first, second, third and fourth light emitting materials E1, E2, E3 and E4 are selected from the group of blue, red and green, so that the pixel array 10 can display a full-color image, but not limited thereto.
Fig. 12-16 are cross-sectional views illustrating a process of fabricating a metal mask 200 according to an embodiment of the invention. Referring to fig. 12, a first photoresist pattern 204 and a second photoresist pattern 206 are formed on a metal substrate 202. Next, referring to fig. 13, the metal substrate 202 is etched by using the first photoresist pattern 204 as a mask, so as to form a plurality of first grooves R1 on the first surface 202a of the metal substrate 202. The first groove R1 can be used to position a second groove R2 (see fig. 15) to be formed next.
Referring to fig. 14, the organic material 208 is filled in the first groove R1. Next, referring to fig. 15, the metal substrate 202 is etched by using the second photoresist pattern 206 as a mask to form a plurality of second grooves R2 on the second surface 202b of the metal substrate 202, wherein the first surface 202a is opposite to the second surface 202 b. In other words, the second surface 202b has a plurality of second grooves R2. Next, referring to fig. 16, the organic material 208 is removed, such that each of the first grooves R1 is respectively communicated with each of the second grooves R2 to form a plurality of openings 210, and the openings 210 are staggered with each other. The spacing S2 of the openings 210 may be increased due to the offset of the openings 210 with respect to each other. Therefore, when the metal substrate 202 is etched, the second surface 202b between the openings 210 is prevented from being disappeared due to the proximity of the openings 210, and the adjacent openings 210 are connected. As a result, the metal mask 200 has an improved yield.
In the embodiment, the width W2 of each second groove R2 is not equal to the width W1 of each first groove R1. For example, the width W2 of the second groove R2 is greater than the width W1 of the first groove R1.
In summary, in the pixel array and the manufacturing method thereof according to the embodiment of the invention, after the first light emitting material is formed, a plurality of second light emitting materials are formed on the second region of the bottom electrode, one of the second light emitting materials is located between the first light emitting materials, and the color of the second light emitting material is the same as the color of the first light emitting material. The first light-emitting material and the second light-emitting material are formed by different evaporation steps, so that a high-resolution pixel array can be manufactured. In the metal mask and the method for manufacturing the same according to the embodiment of the invention, the first openings of the metal mask are arranged in a staggered manner, so that the distance between the first openings can be increased. In other words, the minimum distance between the first openings increases. Therefore, the metal mask has improved yield.

Claims (10)

1. An array of pixels, comprising:
a substrate;
a plurality of first light emitting materials on the substrate; and
a plurality of second light emitting materials on the substrate, wherein colors of the second light emitting materials are the same as colors of the first light emitting materials, the first light emitting materials and the second light emitting materials are alternately arranged at a first interval and a second interval in a direction, and the first interval is not equal to the second interval;
a plurality of third luminescent materials on the substrate, wherein the third luminescent materials have different colors from the first and second luminescent materials; and
and a plurality of fourth luminescent materials positioned on the substrate, wherein the colors of the fourth luminescent materials are different from the colors of the first, second and third luminescent materials.
2. The pixel array of claim 1, wherein the first, second, third, and fourth light-emitting materials are selected from the group consisting of blue, red, and green.
3. A method for manufacturing a pixel array comprises the following steps:
providing a substrate, wherein the substrate comprises a plurality of bottom electrodes;
forming a plurality of first luminescent materials on a first area of the bottom electrodes by using a first metal mask;
after the first luminescent materials are formed, a plurality of second luminescent materials are formed on a second area of the bottom electrodes, one of the second luminescent materials is positioned among the first luminescent materials, and the color of the second luminescent materials is the same as that of the first luminescent materials; and
forming a plurality of top electrodes on the first light-emitting materials and the second light-emitting materials.
4. The method of claim 3, wherein the first metal mask has a plurality of first openings that are offset from each other.
5. The method of claim 3, wherein the second luminescent materials are formed using the first metal mask.
6. The method of claim 3, wherein the second light emitting materials are formed using a second metal mask having a plurality of second openings, the second openings being offset from each other, the second openings being arranged in a different manner than the first openings.
7. The method of claim 3, further comprising:
and forming a plurality of third luminescent materials and a plurality of fourth luminescent materials on the bottom electrodes, wherein the third luminescent materials and the fourth luminescent materials have different colors.
8. A method of fabricating a metal mask, comprising:
etching a metal substrate by using a first photoresist pattern as a mask to form a plurality of first grooves on a first surface of the metal substrate;
filling an organic material in the first grooves;
etching the metal substrate by using a second photoresist pattern as a mask to form a plurality of second grooves on a second surface of the metal substrate, wherein the first surface is opposite to the second surface; and
removing the organic material to make each first groove respectively communicate with each second groove to form a plurality of openings, wherein the openings are staggered.
9. The method of claim 8, wherein the width of each second groove is not equal to the width of each first groove.
10. A metal mask, comprising:
a first surface having a plurality of first grooves; and
the second surface is opposite to the first surface and is provided with a plurality of second grooves, each first groove is communicated with each second groove to form a plurality of openings, the width of each second groove is not equal to the width of each first groove, and the openings are staggered.
CN202111376367.XA 2021-06-08 2021-11-19 Pixel array and manufacturing method thereof, metal mask and manufacturing method thereof Pending CN114068665A (en)

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TW110120829A TWI777604B (en) 2021-06-08 2021-06-08 Pixel array and formation method thereof, metal mask and formation method thereof
TW110120829 2021-06-08

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