TW202247445A - 固體攝像元件、固體攝像元件之製造方法及電子機器 - Google Patents

固體攝像元件、固體攝像元件之製造方法及電子機器 Download PDF

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Publication number
TW202247445A
TW202247445A TW111118960A TW111118960A TW202247445A TW 202247445 A TW202247445 A TW 202247445A TW 111118960 A TW111118960 A TW 111118960A TW 111118960 A TW111118960 A TW 111118960A TW 202247445 A TW202247445 A TW 202247445A
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Taiwan
Prior art keywords
light
wall
aforementioned
state imaging
solid
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TW111118960A
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English (en)
Chinese (zh)
Inventor
大木進
平松克規
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日商索尼半導體解決方案公司
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Publication of TW202247445A publication Critical patent/TW202247445A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters

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  • Solid State Image Pick-Up Elements (AREA)
  • Element Separation (AREA)
TW111118960A 2021-05-27 2022-05-20 固體攝像元件、固體攝像元件之製造方法及電子機器 TW202247445A (zh)

Applications Claiming Priority (2)

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JP2021089185 2021-05-27
JP2021-089185 2021-05-27

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TW202247445A true TW202247445A (zh) 2022-12-01

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US (1) US20240258348A1 (https=)
EP (1) EP4350770A4 (https=)
JP (1) JP7802782B2 (https=)
CN (1) CN117321772A (https=)
TW (1) TW202247445A (https=)
WO (1) WO2022249575A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12176364B2 (en) * 2021-12-27 2024-12-24 Omnivision Technologies, Inc. Passivation-enhanced image sensor and surface-passivation method
JP2025024416A (ja) * 2023-08-07 2025-02-20 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
CN121816844A (zh) * 2023-10-06 2026-04-07 索尼半导体解决方案公司 光检测装置和电子设备
WO2025169620A1 (ja) * 2024-02-09 2025-08-14 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器

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Publication number Priority date Publication date Assignee Title
JP4621719B2 (ja) 2007-09-27 2011-01-26 富士フイルム株式会社 裏面照射型撮像素子
KR102546550B1 (ko) 2016-06-24 2023-06-23 에스케이하이닉스 주식회사 딥 트렌치들 내의 전달 게이트들을 갖는 이미지 센서
KR102549400B1 (ko) * 2018-03-21 2023-06-30 에스케이하이닉스 주식회사 Pd 바이어스 패턴들을 갖는 이미지 센서
TWI834644B (zh) 2018-05-18 2024-03-11 日商索尼半導體解決方案公司 攝像元件及電子機器
DE112020003133T5 (de) 2019-06-26 2022-03-10 Sony Semiconductor Solutions Corporation Bildgebungsvorrichtung
FR3098988B1 (fr) 2019-07-19 2022-08-26 St Microelectronics Crolles 2 Sas Capteur d'image

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CN117321772A (zh) 2023-12-29
WO2022249575A1 (ja) 2022-12-01
JPWO2022249575A1 (https=) 2022-12-01
EP4350770A4 (en) 2024-08-07
JP7802782B2 (ja) 2026-01-20
EP4350770A1 (en) 2024-04-10
US20240258348A1 (en) 2024-08-01

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