JPWO2022249575A1 - - Google Patents
Info
- Publication number
- JPWO2022249575A1 JPWO2022249575A1 JP2023523985A JP2023523985A JPWO2022249575A1 JP WO2022249575 A1 JPWO2022249575 A1 JP WO2022249575A1 JP 2023523985 A JP2023523985 A JP 2023523985A JP 2023523985 A JP2023523985 A JP 2023523985A JP WO2022249575 A1 JPWO2022249575 A1 JP WO2022249575A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/182—Colour image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021089185 | 2021-05-27 | ||
| JP2021089185 | 2021-05-27 | ||
| PCT/JP2022/005561 WO2022249575A1 (ja) | 2021-05-27 | 2022-02-14 | 固体撮像素子、固体撮像素子の製造方法および電子機器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022249575A1 true JPWO2022249575A1 (https=) | 2022-12-01 |
| JP7802782B2 JP7802782B2 (ja) | 2026-01-20 |
Family
ID=84229793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023523985A Active JP7802782B2 (ja) | 2021-05-27 | 2022-02-14 | 固体撮像素子、固体撮像素子の製造方法および電子機器 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240258348A1 (https=) |
| EP (1) | EP4350770A4 (https=) |
| JP (1) | JP7802782B2 (https=) |
| CN (1) | CN117321772A (https=) |
| TW (1) | TW202247445A (https=) |
| WO (1) | WO2022249575A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12176364B2 (en) * | 2021-12-27 | 2024-12-24 | Omnivision Technologies, Inc. | Passivation-enhanced image sensor and surface-passivation method |
| JP2025024416A (ja) * | 2023-08-07 | 2025-02-20 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置及び電子機器 |
| CN121816844A (zh) * | 2023-10-06 | 2026-04-07 | 索尼半导体解决方案公司 | 光检测装置和电子设备 |
| WO2025169620A1 (ja) * | 2024-02-09 | 2025-08-14 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置および電子機器 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170373108A1 (en) * | 2016-06-24 | 2017-12-28 | SK Hynix Inc. | Image sensor including transfer gates in deep trenches |
| US20190296060A1 (en) * | 2018-03-21 | 2019-09-26 | SK Hynix Inc. | Image sensor having pd bias patterns |
| WO2019220945A1 (ja) * | 2018-05-18 | 2019-11-21 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子、電子機器 |
| WO2020262131A1 (ja) * | 2019-06-26 | 2020-12-30 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
| US20210020675A1 (en) * | 2019-07-19 | 2021-01-21 | Stmicroelectronics (Crolles 2) Sas | Image sensor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4621719B2 (ja) | 2007-09-27 | 2011-01-26 | 富士フイルム株式会社 | 裏面照射型撮像素子 |
-
2022
- 2022-02-14 JP JP2023523985A patent/JP7802782B2/ja active Active
- 2022-02-14 WO PCT/JP2022/005561 patent/WO2022249575A1/ja not_active Ceased
- 2022-02-14 EP EP22810859.3A patent/EP4350770A4/en active Pending
- 2022-02-14 CN CN202280035623.5A patent/CN117321772A/zh active Pending
- 2022-02-14 US US18/560,858 patent/US20240258348A1/en active Pending
- 2022-05-20 TW TW111118960A patent/TW202247445A/zh unknown
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170373108A1 (en) * | 2016-06-24 | 2017-12-28 | SK Hynix Inc. | Image sensor including transfer gates in deep trenches |
| US20190296060A1 (en) * | 2018-03-21 | 2019-09-26 | SK Hynix Inc. | Image sensor having pd bias patterns |
| WO2019220945A1 (ja) * | 2018-05-18 | 2019-11-21 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子、電子機器 |
| WO2020262131A1 (ja) * | 2019-06-26 | 2020-12-30 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
| US20220238590A1 (en) * | 2019-06-26 | 2022-07-28 | Sony Semiconductor Solutions Corporation | Imaging device |
| US20210020675A1 (en) * | 2019-07-19 | 2021-01-21 | Stmicroelectronics (Crolles 2) Sas | Image sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN117321772A (zh) | 2023-12-29 |
| WO2022249575A1 (ja) | 2022-12-01 |
| EP4350770A4 (en) | 2024-08-07 |
| JP7802782B2 (ja) | 2026-01-20 |
| TW202247445A (zh) | 2022-12-01 |
| EP4350770A1 (en) | 2024-04-10 |
| US20240258348A1 (en) | 2024-08-01 |
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