TW202245986A - Polishing system and dressing device thereof - Google Patents
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Abstract
Description
本揭露係關於化學機械平坦化/研磨(Chemical-Mechanical Planarization/ Polishing, CMP)製程之應用,尤其關於承載件之修整裝置。The present disclosure relates to the application of Chemical-Mechanical Planarization/Polishing (CMP) process, especially to the trimming device of the carrier.
CMP製程係半導體工業中用以製造光滑且平坦表面之矽晶圓的常見製程,其最重要的效能指標在於研磨晶圓之均勻度、IC線路之光滑性、材料移除率、用於CMP之消耗品的壽命等因素。The CMP process is a common process used in the semiconductor industry to manufacture silicon wafers with smooth and flat surfaces. The most important performance indicators are the uniformity of the polished wafer, the smoothness of the IC circuit, the material removal rate, and the efficiency of CMP. Factors such as the life of consumables.
CMP製程可用於全面性之平坦化製程,其藉由載體(例如,研磨頭)將晶圓或基板旋轉並下壓至由旋轉平台帶動而自轉之承載件(例如,拋光墊)表面上,且提供具有化學性質的拋光液於承載件表面上以使晶圓或基板之表面產生具有鬆軟結構性質的鈍化層,並協同承載件表面所承載之磨料(abrasive)對所述鈍化層進行機械力移除,進而得到平坦的晶圓或基板。長時間的CMP製程將導致晶圓或基板之碎屑及磨粒阻塞承載件之孔洞或使承載件表面鈍化,以致晶圓或基板的材料移除率降低,因此須藉由修整承載件以重新提升其工作性能,以維持晶圓或基板之品質。The CMP process can be used for a comprehensive planarization process, which uses a carrier (such as a grinding head) to rotate and press a wafer or substrate onto the surface of a carrier (such as a polishing pad) that is driven by a rotating platform and rotates, and Provide a chemical polishing liquid on the surface of the carrier to produce a passivation layer with a soft structure on the surface of the wafer or substrate, and cooperate with the abrasive (abrasive) carried on the surface of the carrier to mechanically move the passivation layer In addition, a flat wafer or substrate is obtained. The long-time CMP process will cause the debris and abrasive particles of the wafer or substrate to block the holes of the carrier or passivate the surface of the carrier, so that the material removal rate of the wafer or substrate will be reduced. Therefore, it is necessary to repair the carrier to re- Improve its working performance to maintain the quality of wafer or substrate.
然而,CMP製程機台自身的震動、修整器修整承載件表面時之往復掃動、承載件的轉動、修整器本體的自轉、以及承載件本身的不均勻性皆可能造成修整器(例如,鑽石修整器)於修整承載件的過程中之晃動與震動,惟目前已知的CMP製程機台並未針對該修整器於修整過程之震盪進行有效的補償或弱化,此將影響承載件經修整後表面之平整性以及表面微結構的特性,甚至導致後續CMP製程中晶圓的材料移除率以及表面拋光結果不佳。尤其在現今半導體的先進製程中,上述問題將愈形嚴重且不可輕忽。However, the vibration of the CMP process machine itself, the reciprocating sweep of the dresser when trimming the surface of the carrier, the rotation of the carrier, the rotation of the dresser body, and the unevenness of the carrier itself may cause the dresser (for example, diamond trimmer) shakes and vibrates during the trimming process of the carrier, but the currently known CMP process machines have not effectively compensated or weakened the vibration of the trimmer during the trimming process, which will affect the trimmed carrier. The flatness of the surface and the characteristics of the surface microstructure even lead to poor material removal rate and surface polishing results of the wafer in the subsequent CMP process. Especially in today's advanced semiconductor manufacturing process, the above problems will become more and more serious and cannot be ignored.
因此,如何針對上述問題提出有效的解決方案,並增進修整器之修整效能及延長承載件之使用壽命,為本領域亟待解決之重要課題。Therefore, how to propose an effective solution to the above-mentioned problems, and how to improve the trimming performance of the trimmer and prolong the service life of the carrier is an important issue to be solved urgently in this field.
為解決上述問題,本揭露係提供一種修整裝置,包括:修整器,其係用以修整承載件之表面;搖臂,其具有第一端及與該第一端相對之第二端,其中,該第一端係與該修整器耦接;基座,其與該第二端耦接,且該基座配置為使該搖臂及該修整器於該承載件之該表面上往復掃動;以及至少一個阻尼器,其設置於該搖臂之內部以調節該修整器或該搖臂於該往復掃動期間之震盪。In order to solve the above problems, the present disclosure provides a trimming device, including: a trimmer, which is used to trim the surface of the carrier; a rocker, which has a first end and a second end opposite to the first end, wherein, the first end is coupled to the trimmer; a base is coupled to the second end, and the base is configured to reciprocally sweep the swing arm and the trimmer on the surface of the carrier; And at least one damper, which is arranged inside the rocker arm to adjust the vibration of the trimmer or the rocker arm during the reciprocating sweeping.
於本揭露的一些實施例中,該至少一個阻尼器設置於靠近該第一端處。In some embodiments of the present disclosure, the at least one damper is disposed near the first end.
於本揭露的一些實施例中,該至少一個阻尼器包括縱軸向阻尼器、橫軸向阻尼器或兩者之組合,其中,該縱軸向阻尼器係用於調節該修整器或該搖臂於該往復掃動期間垂直於該承載件之表面的該震盪,且該橫軸向阻尼器係用於調節該修整器或該搖臂於該往復掃動期間平行於該承載件之表面的該震盪。於本揭露的一些實施例中,該至少一個阻尼器包括該橫軸向阻尼器及該縱軸向阻尼器。In some embodiments of the present disclosure, the at least one damper includes a longitudinal damper, a transverse damper, or a combination of both, wherein the longitudinal damper is used to adjust the trimmer or the swing The oscillation of the arm perpendicular to the surface of the carrier during the reciprocating sweep, and the transverse axial damper is used to adjust the vibration of the trimmer or the rocker arm parallel to the surface of the carrier during the reciprocating sweep The shock. In some embodiments of the present disclosure, the at least one damper includes the transverse axial damper and the longitudinal axial damper.
於本揭露的一些實施例中,該至少一個阻尼器包括調諧質量阻尼器。於本揭露的一些實施例中,該調諧質量阻尼器係主動式調諧質量阻尼器。於本揭露的一些實施例中,該主動式調諧質量阻尼器包括:感測器,其係用以感測該修整器或該臂部於該往復掃動期間之該震盪所對應的即時運動信號;控制單元,其設置為根據該即時運動信號計算該震盪之荷載,並根據該荷載產生控制訊號;以及致動器,其設置為根據該控制訊號調整該主動式調諧質量阻尼器之阻尼係數,進而使該主動式調諧質量阻尼器輸出抑制該震盪之該荷載的主動控制力。In some embodiments of the present disclosure, the at least one damper includes a tuned mass damper. In some embodiments of the present disclosure, the tuned mass damper is an active tuned mass damper. In some embodiments of the present disclosure, the active tuned mass damper includes: a sensor for sensing an instantaneous motion signal corresponding to the oscillation of the trimmer or the arm during the reciprocating sweep a control unit configured to calculate a load of the oscillation based on the instant motion signal and generate a control signal based on the load; and an actuator configured to adjust the damping coefficient of the active tuned mass damper based on the control signal, Furthermore, the active tuned mass damper outputs an active control force for suppressing the vibration of the load.
於本揭露的一些實施例中,該主動式調諧質量阻尼器包括:壓電感測器,其係用以感測該修整器或該臂部於該往復掃動期間之該震盪所對應的即時加速度信號;控制電路,其設置根據該即時加速度信號計算該震盪之荷載,並根據該荷載產生控制訊號;以及壓電致動器,其設置為根據該控制訊號調整該主動式調諧質量阻尼器之阻尼係數,進而使該主動式調諧質量阻尼器輸出抑制該震盪之該荷載的主動控制力。於本揭露的一些實施例中,該壓電致動器係設置為以抑制該震盪之阻尼頻率輸出該主動控制力。In some embodiments of the present disclosure, the active tuned mass damper includes: a piezoelectric sensor for sensing the real-time corresponding to the oscillation of the trimmer or the arm during the reciprocating sweep. an acceleration signal; a control circuit configured to calculate a load of the oscillation based on the instantaneous acceleration signal and generate a control signal based on the load; and a piezoelectric actuator configured to adjust the active tuned mass damper based on the control signal damping coefficient, so that the active tuned mass damper outputs an active control force of the load that suppresses the oscillation. In some embodiments of the present disclosure, the piezoelectric actuator is configured to output the active control force at a damped frequency that suppresses the oscillation.
於本揭露的一些實施例中,該基座包括旋轉軸柱,該旋轉軸柱經致動器控制而樞轉,以驅動該搖臂及該修整器於該承載件之表面上方往復掃動。In some embodiments of the present disclosure, the base includes a rotating shaft, and the rotating shaft is controlled by an actuator to pivot, so as to drive the swing arm and the trimmer to reciprocally sweep above the surface of the carrier.
本揭露復提供一種拋光系統,包括:旋轉平台;承載件,其設置於該旋轉平台之上表面以承載晶圓或基板;載體,其設置於該承載件之上方以將該晶圓或該基板固定於該承載件之表面並進行拋光;本揭露之修整裝置,其設置於該承載件之上方以修整該承載件之表面。The disclosure further provides a polishing system, including: a rotating platform; a carrier, which is arranged on the upper surface of the rotating platform to carry a wafer or a substrate; a carrier, which is arranged on the carrier to carry the wafer or the substrate fixed on the surface of the carrier and polished; the trimming device of the present disclosure is arranged above the carrier to trim the surface of the carrier.
於本揭露的一些實施例中,復包括:噴嘴,其設置於該承載件之上方以提供包含磨料之拋光液至該承載件之表面。In some embodiments of the present disclosure, it further includes: a nozzle disposed above the carrier to provide polishing liquid containing abrasives to the surface of the carrier.
綜上所述,本揭露之拋光系統及其修整裝置主要在修整裝置之搖臂內部設置至少一個阻尼器,以適當地補償或弱化修整器或搖臂於承載件修整期間所受任意軸向之震盪,使修整後之承載件表面達到預期之粗糙度、平整度、均勻度及微結構,不僅能改善後續化學機械平坦化製程中的材料移除率及表面拋光結果,亦可延長承載件的使用壽命。To sum up, the polishing system and its dressing device of the present disclosure are mainly provided with at least one damper inside the rocker arm of the dressing device to properly compensate or weaken any axial force on the dresser or the rocker arm during the trimming of the carrier. Oscillation, so that the surface of the trimmed carrier reaches the expected roughness, flatness, uniformity and microstructure, which can not only improve the material removal rate and surface polishing results in the subsequent chemical mechanical planarization process, but also prolong the lifetime of the carrier. service life.
以下藉由特定的實施例說明本揭露之實施方式,本揭露所屬技術領域中具有通常知識者可由本文所揭示之內容輕易地瞭解本揭露之優點及功效。然而,本文所載之具體實施例並非用以限定本揭露,本揭露亦可藉由其它不同之實施方式加以實現或應用,本文所載各項細節亦可根據不同的觀點與應用,在不悖離本揭露之範圍下賦予不同的變化或修飾。The implementation of the present disclosure is described below through specific examples. Those skilled in the art to which the present disclosure belongs can easily understand the advantages and effects of the present disclosure from the contents disclosed herein. However, the specific embodiments described herein are not intended to limit the present disclosure, and the present disclosure may also be implemented or applied through other different implementation modes, and the details contained herein may also be based on different viewpoints and applications, without prejudice to Various changes or modifications are conferred within the scope of the present disclosure.
本文所附圖式所繪示之結構、比例、大小等均僅用於配合本文所揭示之內容,以供本揭露所屬技術領域中具有通常知識者閱讀及瞭解,而非用於限定本揭露可實施之範圍,故任何結構之修飾、比例關係之改變、或大小之調整,在不影響本揭露所能產生之功效及所能達成之目的下,均應屬於本揭露所揭示之技術內容得能涵蓋之範圍。The structures, proportions, sizes, etc. shown in the drawings attached to this document are only used to match the content disclosed herein, so that those with ordinary knowledge in the technical field of this disclosure can read and understand, and are not used to limit the scope of this disclosure. Therefore, any modification of structure, change of proportional relationship, or adjustment of size shall belong to the technical content disclosed in this disclosure without affecting the effect and purpose of this disclosure. range covered.
本文所述「包括」、「包含」或「具有」特定要件時,除非另有說明,否則可另包含其他元件、組成分、結構、區域、部位、裝置、系統、步驟、連接關係等要件,而非排除該等其他要件。When "comprising", "comprising" or "having" specific elements mentioned herein, unless otherwise specified, other elements, components, structures, regions, parts, devices, systems, steps, connection relations and other elements may be included in addition, These other requirements are not to be excluded.
本文所述「第一」或「第二」等具有順序性的用語,僅為便於敘述或區別元件、組成分、結構、區域、部位、裝置、系統等要件,而非用於限定本揭露可實施之範圍,亦非用於限定該等要件在空間上的順序。此外,除非本文另有明確說明,否則本文所述單數形式之「一」及「該」也包含複數形式,且本文所述「或」可與「及/或」互換使用。Sequential terms such as "first" or "second" mentioned herein are only used to describe or distinguish elements, components, structures, regions, parts, devices, systems, etc. The scope of implementation is not intended to limit the spatial order of these elements. In addition, the singular forms of "a" and "the" mentioned herein also include plural forms, and "or" mentioned herein can be used interchangeably with "and/or" unless otherwise specified herein.
在本文所述「上」、「上方」、「平行」及「垂直」等具有空間相對性的用語,僅係便於闡明本揭露之具體實施例中用一個元件或特徵與其他元件或特徵之間的相對位置及關係,而非用於限定本揭露可實施之範圍,其相對位置及關係之調整、互換及改變,在不實質變更本揭露之技術內容的條件下,應當視為本揭露可實施之範圍。此外,本文所述「平行」係指基本上平行,其包含二個元件、二個軸線或二個平面之間的角度處於0度角之-10度至+10度間的情形,例如-5度至5度;本文所述「垂直」係指基本上垂直,其包含二個元件、二個軸線或二個平面之間的角度處於90度角之-10度至+10度間的情形,例如85度至95度。The spatially relative terms such as "on", "above", "parallel" and "perpendicularly" mentioned herein are only for the purpose of clarifying the relationship between one element or feature and other elements or features in specific embodiments of the present disclosure. The relative position and relationship of this disclosure are not used to limit the scope of implementation of this disclosure. The adjustment, exchange and change of its relative position and relationship should be regarded as the implementation of this disclosure without substantially changing the technical content of this disclosure. range. In addition, "parallel" mentioned herein means substantially parallel, which includes the situation that the angle between two elements, two axes or two planes is between -10 degrees and +10 degrees of 0 degrees, such as -5 degrees to 5 degrees; as used herein, "perpendicular" means substantially perpendicular, which includes the situation where the angle between two elements, two axes or two planes is between -10 degrees and +10 degrees of 90 degrees, For example 85 degrees to 95 degrees.
本文中的術語「耦接」係指複數個元件直接或間接地以機械性、化學性、電性、磁性或其中兩者以上之組合的方式結合在一起,「直接耦接」為指複數個元件之間直接接觸而結合在一起,而「間接耦接」為指複數個元件之間藉由至少一耦接件而結合在一起。達成本文所述「耦接」的手段包含但不限於緊密地或有縫隙地連接、樞接、連結、縫合、接合、黏合、嵌合、螺合、扣合、釘合、夾合、附著、穿設、鉗夾、安置、一體成型或其中兩者以上之組合。本文中的術語「耦接件」為指可達成上述「耦接」手段之元件。The term "coupling" in this article refers to a plurality of components that are directly or indirectly combined mechanically, chemically, electrically, magnetically or a combination of two or more of them, and "directly coupling" refers to a plurality of Components are connected together by direct contact, and "indirect coupling" refers to the combination of a plurality of components through at least one coupling. Means for achieving "coupling" as described herein include, but are not limited to, tightly or gap-connected, pivoted, connected, sewn, joined, glued, fitted, screwed, snapped, stapled, clipped, attached, Piercing, clamping, placement, integral molding or a combination of two or more of them. The term "coupling" herein refers to an element that can achieve the above-mentioned "coupling" means.
本文中的術語「致動器」係指將各種能量或動力來源轉換成機械動能以驅使物體、裝置或系統運動之動力裝置。該致動器根據該能量或動力來源之類型不同而有不同之實施態樣,於本揭露的至少一個實施例中,該致動器包括但不限於氣壓致動器(例如,氣壓缸)、液壓致動器(例如,液壓缸)、電氣致動器(例如,直流馬達、交流馬達或步進馬達)、機電混合致動器(例如,電磁閥)。於本揭露的至少一個實施例中,該致動器係用以驅使物體、裝置或系統轉動。於本揭露的至少一個實施例中,該致動器為壓電致動器。The term "actuator" herein refers to a power device that converts various energy or power sources into mechanical kinetic energy to drive an object, device or system to move. The actuator has different implementations depending on the type of the energy or power source. In at least one embodiment of the present disclosure, the actuator includes but is not limited to a pneumatic actuator (for example, a pneumatic cylinder), Hydraulic actuators (eg, hydraulic cylinders), electrical actuators (eg, DC motors, AC motors, or stepper motors), electromechanical hybrid actuators (eg, solenoid valves). In at least one embodiment of the present disclosure, the actuator is used to drive an object, device or system to rotate. In at least one embodiment of the present disclosure, the actuator is a piezoelectric actuator.
參照圖1,本揭露之修整裝置22可應用於拋光製程(例如,CMP製程)的拋光系統2上。於本揭露的至少一個實施例中,所述拋光系統2包括旋轉平台20、承載件21(例如,內含磨料或不含磨料之拋光墊或研光盤、具有溝槽或無溝槽之拋光墊、研光盤或底盤、或類似者)、修整裝置22、載體23(例如,研磨頭)及噴頭24。承載件21設置於旋轉平台20之上表面以承載晶圓25,並隨著旋轉平台20轉動而旋轉;載體23設置於承載件21之上方以固定(例如,吸附)晶圓25,並旋轉及下壓晶圓25至承載件21之表面以進行拋光;噴頭24設置於承載件21上方以提供包含磨料及化學性質之拋光液至承載件21之上表面,以助承載件21對晶圓25之表面進行拋光。於本揭露的至少一個實施例中,旋轉平台20或載體23配置為經致動器(未圖示)控制而轉動。Referring to FIG. 1 , the
於本揭露的至少一個實施例中,承載件21係軟韌的彈性墊,其本身無法以固定切深的方式進行材料移除(即,修整),而需以控制力量之方式進行研磨修整。為使承載件21的修整達到最佳效果且不影響(或優化)後續晶圓25或基板的材料移除率與表面拋光結果,本揭露之至少一個實施例中的修整裝置22除了用於在拋光製程期間進行承載件21之活化(conditioning)、清理及再生粗糙度等修整作業,還可調節修整作業期間之震盪。In at least one embodiment of the present disclosure, the bearing
圖2係以側視角度呈現拋光系統2中之修整裝置22於承載件21上的實施態樣,修整裝置22及承載件21以外之各元件如前所述,於此不再贅述。於本揭露的至少一個實施例中,修整裝置22包括基座221、搖臂222及修整器223。搖臂222具有第一端2221及第一端2221相對之第二端2222,其中,第一端2221係與修整器223耦接,第二端2222係耦接至基座221。於本揭露的至少一個實施例中,基座221 係設置於旋轉平台20之外。於本揭露的至少一個實施例中,基座221包括經致動器(未圖示)控制而樞轉的旋轉軸柱,其係用於作為支撐點以驅動搖臂222在承載件21上方擺動(例如,往復掃動),進而帶動修整器223在承載件21表面上擺動(例如,往復掃動)以進行修整。於本揭露的至少一個實施例中,修整器223為一鑽石整修器,其可懸置於承載件21上方並視情況下壓(例如,在接近欲修整處時),並藉由其底表面之鑽石磨料以自轉摩擦方式將承載件21之表面重新紋理化。FIG. 2 is a side view showing the implementation of the
於本揭露的至少一個實施例中,修整裝置22復包括至少一個阻尼器30,以在承載件21修整期間調節(例如,補償或弱化)由於拋光系統自身的震動、承載件21在旋轉平台20上之自轉(例如,以旋轉平台20之圓心為軸而旋轉)、修整器223修整承載件21時之自轉與下壓、搖臂222自身之擺動(例如,往復掃動)、或承載件21表面的不均勻性等情況下所產生之震盪(例如,振動或晃動)。於本揭露的至少一個實施例中,至少一個阻尼器30係設置於搖臂222內部,較佳地,至少一個阻尼器30係設置於搖臂222內部靠近第一端2221處。於本揭露的至少一個較佳實施例中,至少一個阻尼器30係設置於搖臂222內部的第一端2221(即,搖臂222中位於修整器223上方處),因第一端2221距離作為支撐點的基座221最遠,導致其在搖臂222往復掃動時之縱向及橫向振幅最大,故設置於第一端2221之阻尼器30能最大程度地發揮其抑制震盪的效果。於本揭露的另一些實施例中,至少一個阻尼器30的設置位置亦可視修整裝置22之構造及其實際抑震需求配置於搖臂222的其他位置或設於基座221處。於本揭露的又一些實施例中,至少一個阻尼器30可以附加方式安裝於搖臂222上,以符合使用者進行隨時修檢或替換之需求。In at least one embodiment of the present disclosure, the
本文中的術語「阻尼器」係指藉由阻尼特性以抑制震盪之元件、裝置或系統。The term "damper" herein refers to a component, device or system that suppresses oscillations by damping properties.
於本揭露的至少一個實施例中,修整裝置22包括至少一個軸向阻尼器;較佳地,修整裝置22包括複數個軸向阻尼器,以調節(例如,補償或弱化)修整作業期間所產生不同軸向之震盪。本文中的術語「軸向阻尼器」係指於至少一軸向方向上提供阻尼且具有至少一個自由度之阻尼器。圖3A及3B顯示本揭露一實施例中之修整裝置22,其包括縱軸向阻尼器31及橫軸向阻尼器32,其餘元件如前所述,於此不再贅述。In at least one embodiment of the present disclosure, the trimming
圖3A所示縱軸向阻尼器31係以平行於修整器223的下壓方向(亦即,垂直於承載件21表面的方向)設置於搖臂222中的第一端2221,以調節(例如,補償或弱化)垂直於修整器223之受力振動。因此,當修整器223下壓至承載件21表面進行修整時,縱軸向阻尼器31能抑制因承載件21表面的不均勻性或修整器223下壓等情況所造成(相對於承載件21表面)之縱向震盪。The
圖3B所示橫軸向阻尼器32係以平行於搖臂222之往復掃動方向(亦即,平行於承載件21表面的方向)設置於搖臂222中的第一端2221,以調節(例如,補償或弱化)平行於修整器223之受力振動。因此,當修整器223在承載件21表面上進行修整時,橫軸向阻尼器32能抑制因修整器223的自轉研磨、承載件21自身的轉動、搖臂222的往復掃動、及承載件21表面的不均勻性等情況所造成 (相對於承載件21表面)之橫向震盪。The transverse
藉由上述縱軸向阻尼器31及橫軸向阻尼器32的協同作用,能有效抑制搖臂222或修整器223於修整作業期間之震盪干擾,以使修整後的承載件21表面達到預期之粗糙度、平整度及均勻度,並延長承載件21的使用壽命。於本揭露的另一些實施例中,除了上述縱軸向阻尼器31及橫軸向阻尼器32,修整裝置22復包括其他軸向阻尼器,以調節其他軸向之震盪。於本揭露的又一些實施例中,單一軸向阻尼器亦可同時調節不同軸向之震盪。Through the synergistic effect of the above-mentioned
於本揭露的至少一個實施例中,修整裝置22包含被動式阻尼器、主動式阻尼器、或兩者之組合。In at least one embodiment of the present disclosure, the trimming
本文中的術語「被動式阻尼器」係指無法進行主動控制之阻尼器30。於本揭露的至少一個實施例中,該被動式阻尼器包括彈性元件(例如,彈簧或彈性材料)及阻尼質量m(例如,質量塊),且該彈性元件與該阻尼質量m連結,以供修整作業期間抑制震盪。The term "passive damper" herein refers to a
本文中的術語「主動式阻尼器」係指能進行主動控制之阻尼器30。於本揭露的至少一個實施例中,該主動式阻尼器包含用於感測器(例如,位置感測器、速度感測器、加速度感測器或其中兩者以上之組合)、控制單元(例如,控制電路或控制器)及致動器(例如,壓電致動器),其中,該感測器係用偵測修整作業期間之震盪所對應的運動信號(例如,位置、速度、加速度或其中兩者以上之組合),該控制單元根據該運動信號產生控制信號以驅使該致動器抑制該震盪。於本揭露的一些實施例中,該致動器調整該主動式阻尼器之阻尼係數,以使該主動式阻尼器輸出抑制該震盪之主動控制力。於本揭露的另一些實施例中,該主動式阻尼器包含阻尼質量m(例如,質量塊),該致動器可藉由改變阻尼質量m之位置或運動,以抑制該震盪。The term "active damper" herein refers to a
於本揭露的至少一個實施例中,阻尼器30具有轉換器(未圖示),以將修整作業期間之震盪機械能轉換為電能或熱能,從而降低該震盪之能量,並達到抑制該震盪之效果。In at least one embodiment of the present disclosure, the
於本揭露的至少一個實施例中,阻尼器30可為調諧質量阻尼器(Tuned Mass Damper, TMD),當調諧質量阻尼器之振動頻率與上述修整作業期間之震盪頻率匹配時,該震盪所產生之能量將轉移至該調諧質量阻尼器,以達到抑制該震盪之效果。該調諧質量阻尼器包括被動式調諧質量阻尼器(Passive Tuned Mass Damper, PTMD)及主動式調諧質量阻尼器(Active Tuned Mass Damper, ATMD),被動式調諧質量阻尼器之振動頻率及阻尼值為固定,適用於抑制固定頻率之震盪;而主動式調諧質量阻尼器則可根據該震盪之即時變化調整其振動頻率及阻尼值,故能因應修整作業期間之各種震盪情形。於本揭露的至少一個實施例中,修整裝置22包含被動式調諧質量阻尼器、主動式調諧質量阻尼器或兩者之組合。於本揭露的一些實施例中,縱軸向阻尼器31及橫軸向阻尼器32皆為主動式調諧質量阻尼器。於本揭露的一些實施例中,該主動式調諧質量阻尼器為相位控制主動式調諧質量阻尼器(Phase Control Active Tuned Mass Damper, PC-ATMD)。In at least one embodiment of the present disclosure, the
圖4顯示本揭露其中至少一個阻尼器30(包括縱軸向阻尼器31及橫軸向阻尼器32)的具體實施例,其為主動式調諧質量阻尼器,且包括至少一個壓電感測器301、控制電路302及壓電致動器303等元件。Fig. 4 shows a specific embodiment of at least one damper 30 (including a longitudinal
在圖4中,壓電感測器301係用於感測上述修整作業期間之震盪所對應的即時加速度訊號,該即時加速度訊號可用於判定該震盪之軸向及後續計算該震盪之荷載。接著,該即時加速度訊號傳送至控制電路302以進行該震盪之荷載的計算。該震盪之荷載係作為控制阻尼器30產生抑制震盪之主動控制力的基準,其計算方法詳參圖5及其相關敘述如後。最後,控制電路302依據所計算該震盪之荷載產生控制訊號,並傳送至壓電致動器303,進而使至少一個阻尼器30針對該震盪執行相對應的調節,其計算方法詳參圖5及其相關敘述如後。據此,針對搖臂222或修整器223於修整作業期間之震盪,壓電致動器303調整至少一個阻尼器30的阻尼係數,並使至少一個阻尼器30以相應震盪的阻尼頻率輸出足以抵抗或抵消(即,補償或弱化)該震盪之該荷載的主動控制力,使得該震盪情形得以控制在預定範圍內,以達到最佳的抑震效果。In FIG. 4 , the
圖5係進一步繪示修整裝置22於上述修整作業期間遭遇震盪時,與至少一個阻尼器30在物理特性上的關聯,並可搭配下文了解上述控制電路302對修整器223可能遭遇震盪之荷載進行計算並對應生成控制訊號之運算流程。FIG. 5 further illustrates the relationship between the trimming
首先,藉由壓電感測器301感測到該震盪的即時加速度可由控制電路302換算成荷載(例如,利用一般力的換算方程式),如圖5中的
所示,其相應箭號所指示的方向係代表震盪的任一種軸向。
First, the instantaneous acceleration of the oscillation sensed by the
接著,將欲調節之荷載
表示為代表動力學方程式的下列數學式:
[數學式1]
其中,
係代表修整裝置22的質量;
係代表阻尼器30的質量;
係代表修整裝置22的阻尼係數;
係代表阻尼器30的阻尼係數;
係代表修整裝置22的彈性係數;
係代表阻尼器30的彈性係數;並且
、
、
係分別代表修整裝置22關於時間
的位移、速度及加速度等函數的震動響應;而
、
、
係代表阻尼器30關於時間
的位移、速度及加速度等函數的震動響應。
Next, the load to be adjusted Expressed as the following mathematical formula representing the kinetic equation: [Mathematical formula 1] in, represents the quality of the finishing
再將上述之荷載
經拉普拉斯轉換為線性非時變函數,藉以預計由壓電致動器303輸出的主動控制力
,其表達為下列數學式:
[數學式2]
其中,此處數學式2的組成形式與數學式1相似,差別在於數學式2將前述代表修整裝置22之震動響應的
、
、
以集合
表示,且將前述代表阻尼器30之震動響應的
、
、
係以集合
表示,並將其他變數進行對應的整理。
Then the above load Transformed into a linear time-invariant function by Laplace, so as to predict the active control force output by the
然後,將數學式2的二等式相加並整理為以下數學式的型態:
[數學式3]
其中,
代表修整裝置22(在無阻尼狀態下)的固有頻率;
代表修整裝置22的阻尼比;
, 代表阻尼器30對於修整裝置22的質量比;而
代表阻尼器30對於修整裝置22的基礎頻率比。
Then, add up the second equation of
控制電路302可根據上述數學式3的運算結果了解阻尼器30的頻率特性,進而決定如何調整阻尼器30的阻尼係數,以在遭遇震盪時適當地輸出主動控制力
進行調節。
The
最後,基於上述數學式3計算阻尼器30的系統轉移函數
,藉以評估阻尼器30輸出預定的主動控制力
所需的調整內容(包括輸出主動控制力
的特定阻尼頻率及所需阻尼係數的調整範圍),其係如以下數學式所示:
[數學式4]
Finally, the system transfer function of the
因此,控制電路302可根據上述數學式3及數學式4的運算結果產生控制訊號,並控制壓電控制器303基於系統轉移函數
操控阻尼器30調整自身的阻尼係數並以對應震盪的阻尼頻率輸出主動控制力
,藉以對修整器223進行修整作業期間所遭遇震盪進行補償或弱化,達到預期之抑震效果。
Therefore, the
綜上所述,本揭露之拋光系統及其修整裝置主要在修整裝置之搖臂內部設置至少一個阻尼器,該阻尼器可以主動方式適當地補償或弱化該修整器或該搖臂於該承載件修整期間所受任意軸向之震盪,以使修整後之承載件表面達到預期之粗糙度、平整度、均勻度、微結構,不僅能改善後續化學機械平坦化製程中的材料移除率及表面拋光結果,亦可延長承載件的使用壽命。To sum up, the polishing system and its dressing device of the present disclosure mainly set at least one damper inside the rocker arm of the dressing device, and the damper can properly compensate or weaken the trimmer or the rocker arm on the carrier in an active manner. Vibration in any axial direction during the trimming, so that the surface of the trimmed carrier can achieve the expected roughness, flatness, uniformity, and microstructure, which can not only improve the material removal rate and surface in the subsequent chemical mechanical planarization process As a result of polishing, the service life of the carrier can also be extended.
2:拋光系統 20:旋轉平台 21:承載件 22:修整裝置 221:基座 222:搖臂 2221:第一端 2222:第二端 223:修整器 23:載體 24:噴嘴 25:晶圓 30:阻尼器 301:壓電感測器 302:控制電路 303:壓電致動器 31:縱軸向阻尼器 32:橫軸向阻尼器 c 1:修整裝置阻尼係數 c 2:阻尼器阻尼係數 f(t):荷載 k 1:修整裝置彈性係數 k 2:阻尼器彈性係數 m:阻尼質量 m 1:修整裝置質量 m 2:阻尼器質量 2: Polishing system 20: Rotary platform 21: Carrier 22: Dressing device 221: Base 222: Rocker arm 2221: First end 2222: Second end 223: Dresser 23: Carrier 24: Nozzle 25: Wafer 30: Damper 301: piezoelectric sensor 302: control circuit 303: piezoelectric actuator 31: longitudinal and axial damper 32: horizontal and axial damper c 1 : trimming device damping coefficient c 2 : damper damping coefficient f ( t): Load k 1 : Elastic coefficient of dressing device k 2 : Damper elastic coefficient m: Damping mass m 1 : Dressing device mass m 2 : Damper mass
圖1為本揭露其中至少一實施例之拋光系統的元件示意圖。FIG. 1 is a schematic diagram of components of a polishing system according to at least one embodiment of the present disclosure.
圖2為本揭露其中至少一實施例之修整裝置及晶圓的側視圖。FIG. 2 is a side view of a trimming device and a wafer according to at least one embodiment of the present disclosure.
圖3A為本揭露其中至少一實施例之修整裝置的側視圖。3A is a side view of a trimming device according to at least one embodiment of the present disclosure.
圖3B為圖3A所示之修整裝置的俯視圖。Fig. 3B is a top view of the trimming device shown in Fig. 3A.
圖4為本揭露其中至少一實施例之修整裝置的實施態樣示意圖。FIG. 4 is a schematic diagram of an implementation of a trimming device according to at least one embodiment of the present disclosure.
圖5為本揭露其中至少一實施例之修整裝置的實施態樣示意圖。FIG. 5 is a schematic diagram of an implementation of a trimming device according to at least one embodiment of the present disclosure.
21:承載件 21: Carrier
221:基座 221: base
222:搖臂 222: rocker arm
2221:第一端 2221: first end
2222:第二端 2222: second end
223:修整器 223: Trimmer
30:阻尼器 30: Damper
m:阻尼質量 m: damping mass
Claims (10)
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TW110119567A TWI765726B (en) | 2021-05-28 | 2021-05-28 | Polishing system and dressing device thereof |
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TW110119567A TWI765726B (en) | 2021-05-28 | 2021-05-28 | Polishing system and dressing device thereof |
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US5938507A (en) * | 1995-10-27 | 1999-08-17 | Applied Materials, Inc. | Linear conditioner apparatus for a chemical mechanical polishing system |
JP5528826B2 (en) * | 2010-01-22 | 2014-06-25 | 株式会社荏原製作所 | Polishing apparatus and method, and performance test method for dressing unit |
JP6282437B2 (en) * | 2012-10-18 | 2018-02-21 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Damper for polishing pad conditioner |
JP6592355B2 (en) * | 2015-01-30 | 2019-10-16 | 株式会社荏原製作所 | Connecting mechanism and substrate polishing apparatus |
JP6921527B2 (en) * | 2016-02-05 | 2021-08-18 | 芝浦機械株式会社 | Polishing equipment |
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