TW202245129A - Chuck, substrate holding device, substrate processing device and method of manufacturing article wherein the chick is chuck capable of reducing distortion of a substrate by having the arrangement positions of a partition wall and convex portion in a predetermined relation - Google Patents

Abstract

The present invention is to provide a chuck that can reduce distortion of a substrate by having the arrangement positions of a partition wall and convex portion in a predetermined relation. A chuck for holding a substrate by suction comprises: a plurality of convex portions contacting to the back surface of the substrate held by suction, an annular partition wall, and a bottom portion on which the plurality of convex portions and the partition wall are disposed. The plurality of convex portions are constituted by a plurality of groups, and each group includes a first convex portion disposed on the outside of the partition wall and a second convex portion disposed on the inside of the partition wall and located adjacent to the first convex portion across the partition wall. Let the distance between the first convex portion and the second convex portion contained in each of the plurality of groups be L and the distance between the second convex portion and the partition wall be s, the relation of s/L < 0.5 is satisfied.

Description

Chuck, substrate holding device, substrate processing device, and manufacturing method of article

The present invention relates to a chuck, a substrate holding device, a substrate processing device and a manufacturing method of an article.

In recent years, the increase in NA (increase in numerical aperture) in response to device miniaturization has progressed in exposure apparatuses (reduced projection exposure apparatuses) used in the manufacture of semiconductor elements and the like. Although the resolution is improved by increasing the NA, the effective depth of focus is reduced. Therefore, in order to ensure a sufficient practical depth while maintaining the resolution, improvements in wafer flatness (substrate surface flatness) have been sought, such as reducing field curvature of the projection optical system and improving the thickness of the wafer (substrate). In addition, the planar accuracy of the chuck for holding the wafer by suction is improved.

One of the causes of the reduction in the flatness of the substrate surface is foreign matter caught between the chuck and the substrate. If a foreign matter is caught, the substrate at the part where the foreign matter is caught deforms and rises, which may lead to poor formation of the pattern formed on the substrate and lower the yield. In order to reliably avoid such a decrease in yield due to foreign matter, a pin contact type chuck (pin chuck) using a so-called pin (convex portion) that greatly reduces the contact ratio between the chuck and the substrate is used.

In the case of using this pin chuck, the substrate may be deformed by deflection (distortion) due to vacuum suction between the protrusions, resulting in a decrease in the flatness of the substrate surface. There are various methods for improving this. A plan is proposed. For example, in Japanese Patent No. 4298078, an annular partition wall (bank) surrounding a plurality of protrusions is provided on the pin chuck, and the partition wall is disposed adjacent to the protrusion on the outer peripheral side and the protrusion on the outer peripheral side. between the protrusions on the inner peripheral side. And, as the arrangement position of the partition wall, it is arranged as close as possible to the convex portion on the outer peripheral portion side.

In addition, in Japanese Unexamined Patent Application Publication No. 2001-185607, the partition wall is arranged on the outside of the convex portion arranged on the outermost peripheral side, or the convex portion on the outermost peripheral side is adjacent to the convex portion on the outermost peripheral side. Between the protrusions on the inner peripheral side. As the arrangement position of the partition wall, the partition wall is arranged within a predetermined range in the outer peripheral direction from the center of the distance between the convex portion on the outermost peripheral side and the convex portion on the inner peripheral side adjacent to the convex portion on the outermost peripheral side. .

When the substrate is vacuum-adsorbed, the inner side of the partition wall is kept at a substantially vacuum pressure to generate an adsorption force, but the outer side of the partition wall becomes atmospheric pressure so that almost no adsorption force is generated. In Japanese Patent No. 4298078 and Japanese Unexamined Patent Application Publication No. 2001-185607, in order to make the adsorption force act on the outer side of the substrate as much as possible, the partition wall is arranged at a position close to the convex portion on the outer peripheral side. However, since the suction force acts on the outside of the substrate, there is a problem that the flatness of the substrate surface is lowered and the distortion (distortion) of the substrate becomes larger.

[Problem to be solved by the invention]

It is an object of the present invention to provide, for example, a chuck that reduces distortion of a substrate by setting the arrangement positions of partition walls and protrusions in a predetermined relationship. [Technical means to solve the problem]

A chuck according to one aspect of the present invention includes a plurality of protrusions in contact with the back surface of the substrate held by adsorption, an annular partition wall, and a bottom on which the plurality of protrusions and the partition wall are arranged, and the plurality of protrusions It is composed of a plurality of groups, and each group includes a first convex portion arranged outside the partition wall, and a second convex portion arranged inside the partition wall and adjacent to the first convex portion with the partition wall interposed therebetween. When the distance between the first convex portion and the second convex portion included in each of the plurality of groups is L, and the distance between the second convex portion and the partition wall is s, s/ L<0.5.

Other features of the invention will be apparent from the following description of exemplary embodiments of the drawings.

Hereinafter, preferred embodiments of the present invention will be described using Examples and drawings with reference to the drawings. In addition, in each figure, the same code|symbol is attached|subjected to the same member or element, and the overlapping description is abbreviate|omitted or simplified.

(Example 1) FIG. 1 is a configuration diagram schematically illustrating the configuration of an exposure apparatus 100 according to Example 1. As shown in FIG. The exposure apparatus 100 irradiates light from a light source (light for exposure) to a photoresist to be cured, and can form a pattern of a cured product in which a pattern formed on a reticle 104 is transferred.

In addition, hereinafter, the direction parallel to the optical axis of the light irradiating the photoresist on the substrate 110 is referred to as the Z-axis direction, and the two directions orthogonal to each other in a plane perpendicular to the Z-axis direction are referred to as the X-axis direction. and the Y-axis direction. The exposure apparatus 100 of the first embodiment can be applied to an apparatus for sequentially focusing and driving a plurality of pattern forming regions (exposure regions), an apparatus for sequentially exposing (projection exposure apparatus, substrate processing apparatus), and the like. Hereinafter, the exposure apparatus 100 of Example 1 is demonstrated with reference to FIG. 1. FIG. In addition, the exposure apparatus 100 of Example 1 is demonstrated as an exposure apparatus of a step-and-repeat method.

The substrate (wafer) 110 is a substrate to be processed whose surface is coated with a photosensitive agent (photoresist) that can effectively produce a chemical reaction by exposure light. The substrate 110 is made of glass, ceramics, metal, silicon, resin, or the like, and a member made of a material different from that of the substrate 110 may be formed on the surface as necessary. In addition, the substrate 110 may be various substrates such as a gallium arsenide wafer, a composite bonded wafer, a glass wafer containing quartz, a liquid crystal panel substrate, and a reticle. In addition, the outer shape is not limited to a circle, but may be a square or the like. In this case, the outer shape of the chuck 1 described later may be a shape matching the outer shape of the substrate.

A reticle (master) 104 is placed on a reticle stage 103 configured to be movable in a plane perpendicular to the optical axis of the projection optical system 106 and in the direction of the optical axis. The reticle 104 has a rectangular outer peripheral shape, and has a pattern portion on a surface (pattern surface) facing the substrate 110, and the pattern portion is provided with a three-dimensional pattern (a concave-convex pattern that should be transferred to the substrate, such as a circuit pattern). ). Reticle 104 is constructed of a light-transmissive material such as quartz.

The exposure apparatus 100 of Embodiment 1 also functions as a substrate processing apparatus and includes a substrate holding device 101, a substrate stage 102, a reticle stage 103, an illumination optical system 105, a projection optical system 106, an off-axis oscilloscope 107, a measurement part 108 and control part 109.

The substrate holding device 101 includes: a chuck 1 for sucking and holding the substrate 110, a suction unit (not shown) as a vacuum source for sucking (exhausting) the space between the back surface of the substrate 110 and the chuck 1, and a control unit. An unillustrated control unit of the suction unit. The detailed structure of the substrate holding device 101 of the first embodiment will be described later.

The substrate stage 102 includes a θZ inclined stage holding the substrate 110 through the substrate holding device 101 , an unillustrated XY stage supporting the θZ inclined stage, and an unillustrated base supporting the XY stage. The substrate stage 102 is driven by a drive device (not shown) such as a linear motor. The driving device can be driven in the six-axis directions of X, Y, Z, θX, θY, and θZ, and is controlled by the control unit 109 described later. In addition, although the driving device is configured to be able to drive in the six-axis direction, it may be able to drive in any number of axis directions from the one-axis direction to the six-axis direction.

The reticle stage 103 is configured, for example, to be movable in a plane perpendicular to the optical axis of the projection optical system 106 described later, that is, in the XY plane, and to be rotatable in the θZ direction. The reticle stage 103 is driven by a drive device (not shown) such as a linear motor. The drive device can drive in the three-axis directions of X, Y, and θZ, and is controlled by a control unit 109 described later. In addition, although the driving device is configured to be able to drive in three-axis directions, it may be able to drive in any number of axis directions from one axis direction to six axis directions.

The illumination optical system 105 includes a light source not shown, and illuminates the reticle 104 on which the circuit pattern (reticle pattern) for transfer is formed. As a light source included in the light source unit, for example, a laser is used. Usable lasers are ArF excimer lasers with a wavelength of about 193 nm, KrF excimer lasers with a wavelength of about 248 nm, F2 excimer lasers with a wavelength of about 157 nm, and the like. In addition, the type of laser is not limited to excimer laser, for example, YAG laser may also be used, and the number of lasers is not limited. In addition, when a laser is used as the light source unit, it is preferable to use a beam shaping optical system that shapes the parallel beam from the laser light source into a desired beam shape, and an incoherent optical system that makes the coherent laser asynchronous. . Furthermore, usable light sources are not limited to lasers, and one or a plurality of lamps such as mercury lamps and xenon lamps may be used.

In addition, although not shown, the illumination optical system 105 includes a lens, a reflection mirror, an optical integrator, a diaphragm, and the like. Generally speaking, the internal optical system is arranged in the order of condenser lens, fly eye, aperture aperture, condenser lens, slit, and imaging optical system. In this case, the optical integrator includes: an integrator constructed by overlapping a fly-eye lens, two sets of cylindrical lens array plates, and the like.

The projection optical system 106 images the diffracted light of the pattern on the reticle 104 illuminated by the exposure light from the illumination optical system 105 on the substrate at a predetermined magnification (for example, 1/2, 1/4, or 1/5). 110 and cause it to interfere. The interference image formed on the substrate 110 is substantially the same as the reticle pattern. This interference image is generally called an optical image, and the shape of the optical image determines the line width formed on the substrate 110 . As the projection optical system 106, an optical system composed of only a plurality of optical elements, or an optical system composed of a plurality of optical elements and at least one concave mirror (catadioptric optical system) can be used. Alternatively, as the projection optical system 106 , an optical system including a plurality of optical elements and at least one kinoform or other diffractive optical element, a total reflection mirror type optical system, or the like may be employed.

The off-axis oscilloscope 107 is used for positioning the substrate 110 and detecting the positions of the plurality of pattern forming regions on the substrate 110 . The relative position of the reference mark arranged on the substrate stage 102 and the mark formed on the substrate 110 mounted on the substrate stage 102 can be detected and measured. The measuring unit (surface position measuring means) 108 is a measuring device capable of focusing the projection optical system 106 on the exposure target area of the substrate 110, and constitutes a focusing device for focusing the projection optical system 106 on the substrate surface.

The control unit 109 includes a CPU, a memory (storage unit), and the like, is composed of at least one computer, and is connected to each component of the exposure apparatus 100 through a circuit. In addition, the control unit 109 integrally controls the operation and adjustment of the respective constituent elements of the exposure apparatus 100 as a whole according to the programs stored in the memory. In addition, the control unit 109 may be configured integrally with other parts of the exposure device 100 (in a common housing), or may be configured separately from other parts of the exposure device 100 (in a separate housing), or may be provided in a separate housing. The exposure apparatus 100 is remotely controlled from a location other than the exposure apparatus 100 .

Here, the exposure sequence of the exposure apparatus 100 will be described as follows. In addition, each operation (process) shown in this exposure sequence is controlled by making the control part 109 execute a computer program. When the exposure sequence is started, the substrate 110 is automatically or manually set in the exposure apparatus 100 by an operator, and the operation of the exposure apparatus 100 is started according to an exposure start command.

First, the first substrate 110 to be exposed first is carried into the substrate carrier in the exposure apparatus 100 by a conveyance mechanism not shown (carrying-in step). Next, the substrate 110 is carried into the chuck 1 mounted on the substrate stage 102 by the transfer mechanism, and is sucked and held by the substrate holding device 101 (substrate holding step).

Next, the off-axis oscilloscope 107 mounted on the exposure device 100 detects a plurality of marks formed on the substrate 110, determines the magnification, rotation, and deviation in the X-axis and Y-axis directions of the substrate 110, and performs position correction (alignment) process).

Next, the substrate stage 102 moves the substrate 110 so that the predetermined pattern formation region to be exposed first on the mounted substrate 110 is aligned with the exposure position of the exposure device 100 . Next, after focusing by the measurement unit 108 , light is irradiated from a light source to expose the photoresist coated in a predetermined pattern formation region for a predetermined time (exposure step). In addition, the exposure time is, for example, about 0.2 seconds.

Next, the substrate stage 102 moves the substrate 110 to the next pattern formation area on the substrate 110 (step movement), and exposes in the same manner as above. The same pattern forming process is repeated sequentially until the exposure of all the pattern forming regions to be exposed is completed. Thus, the pattern formed on the reticle 104 can be formed on one substrate 110 . Next, the substrate 110 is handed over from the chuck 1 to a collection and transfer hand (not shown), and returned to the substrate carrier in the exposure apparatus 100 (carrying out process). In addition, after carrying out the unloading process of the substrate 110, the substrate 110 is processed, for example, by etching, and the substrate 110 is processed (processing step), and unnecessary cured materials and the like are removed from the processed substrate 110, whereby an article can be manufactured. .

In Embodiment 1, as described above, a step-and-repeat method exposure apparatus was assumed, but the present invention is not limited thereto, and may be applied to a scanning type exposure apparatus. In the case of being applied to a scanning type exposure device, the reticle and the substrate 110 are scanned synchronously according to the exposure magnification, and exposure is performed during the scanning process.

In addition, the substrate holding device 101 of Example 1 is not limited to use in the exposure device 100 . For example, it can also be used in substrate processing equipment including imprint equipment (lithography equipment), liquid crystal substrate manufacturing equipment, magnetic head manufacturing equipment, semiconductor inspection equipment, liquid crystal substrate inspection equipment, magnetic head inspection equipment, and micromachine manufacturing.

Here, when the chuck 1 sucks and holds the substrate 110 , a foreign object may be caught between the substrate 110 and the chuck 1 . For example, even if a foreign matter of several μm is caught, the substrate 110 at the part where the foreign matter is caught will be deformed to locally bulge, and pattern formation failure may occur. As an example, it may occur that the effective depth of focus is 1 μm or less.

In order to prevent such foreign matter from being trapped, a so-called pin contact type chuck (hereinafter referred to as "chuck") is used, in which the portion that contacts the back surface of the substrate 110 is formed as a pin-shaped protrusion, and the contact with the substrate 110 is made. The area is greatly reduced. Hereinafter, referring to FIG. 13 , a chuck used in a conventional general substrate holding device will be described.

FIG. 13 illustrates an example of a chuck 200 used in a general substrate holding device. FIG. 13A is a plan view of the chuck 200 viewed from the +Z direction. FIG. 13B is a partial cross-sectional view of the collet 200 shown in FIG. 13A. The substrate holding device illustrated in FIG. 13 is composed of a chuck 200 , a convex portion 201 , a partition (first partition) 204 , and a suction port 205 .

The convex portion 201 functions as an abutment surface (a support surface for supporting the substrate after it is placed) that abuts against the back surface of the substrate 110 . The plurality of pin-shaped protrusions 201 includes: a plurality of pin-shaped protrusions (outer peripheral side protrusions) 202, a plurality of pin-shaped protrusions (inner peripheral side protrusions) 203, and a plurality of pin-shaped protrusions (inner peripheral side protrusions) 203, and There are a plurality of different pin-shaped protrusions in the peripheral side protrusions 203 .

The partition wall 204 is annularly provided at the bottom of the chuck 200 so as to be located inside the outer peripheral convex portion 202 . The height of the partition wall 204 is formed to be lower by about 1 to 2 μm than the upper surface of the outer peripheral convex portion 202 . The suction port 205 is a through hole formed in the bottom of the chuck 200, and is connected to a flow path formed by a pipe or the like communicating with a vacuum source (suction part) not shown.

The outer peripheral convex portion 202 is disposed outside the partition wall 204 so as to be in contact with the rear surface in the outer peripheral direction of the substrate 110 . The plurality of outer peripheral protrusions 202 are arranged on the outer periphery having the same radius as that of the substrate 110 . The outer peripheral convex portion 202 illustrated in FIG. 13 is a convex portion disposed on the outermost peripheral side (outermost peripheral) of the cartridge 200 . The inner peripheral convex portion 203 is arranged on the inner side of the partition wall 204 so as to be in contact with the rear surface in the inner peripheral direction of the substrate 110 . The plurality of inner peripheral protrusions 203 are arranged on the inner periphery having the same radius as that of the substrate 110 . The inner peripheral convex portion 203 illustrated in FIG. 13 is disposed adjacent to the bottom outer peripheral convex portion 202 disposed on the outermost peripheral side with the partition wall 204 interposed therebetween. In addition, the plurality of pin-shaped protrusions 201 in the chuck 200 are arranged in a grid pattern with a predetermined distance (interval, period, width) therebetween. In addition, the outer peripheral side convex portion 202 arranged outside the partition wall 204 and the inner peripheral side convex portion 203 arranged inside the partition wall 204 and adjacent to the outer peripheral side convex portion 202 via the partition wall 204 are regarded as a group. . Furthermore, the plurality of convex portions constituted by the outer peripheral side convex portion 202 and the inner peripheral side convex portion 203 is constituted by a plurality of groups including each group.

A method for sucking the substrate 110 by the chuck 200 configured as described above will be described below. First, the substrate 110 is placed on the protrusion 201 of the chuck 200 . As a result, the back surface of the substrate 110 is brought into contact with the plurality of protrusions 201 . Next, by operating a vacuum source (not shown), the substrate 110 is vacuum-suctioned through the suction port 205 , whereby the substrate 110 is supported by the convex portion 201 of the chuck 200 and held by suction. At this time, the substrate 110 is deformed and bent between the protrusions 201 by the vacuum suction force. Due to the bending of the substrate 110, the flatness of the substrate 110 is lowered, and so-called wafer deformation (hereinafter referred to as “deformation”) occurs.

Taking the arrangement position of the partition wall 204 illustrated in FIG. 13B as an example, the flatness and deformation amount of the substrate 110 at the outer peripheral convex portion 202 will be described as follows based on a material mechanics model with reference to FIG. 2 . Fig. 2 is a material mechanics model illustrating a beam with one side fixed and one side free subject to a uniform load. Furthermore, the material mechanics model of the flexure state of the substrate 110 in the outer peripheral region (peripheral portion) of the chuck 200 is applied to the model illustrated in FIG. 2 . In addition, as illustrated in FIG. 13B , the arrangement position of the partition wall 204 is closer to the outer peripheral side convex portion 202 than to the inner peripheral side convex portion 203 .

Let the Young's modulus of the substrate 110 be E, and the thickness of the substrate 110 be h. Next, let L be the distance between the outer peripheral side convex portion 202 and the inner peripheral side convex portion 203 included in each of the above-mentioned plurality of groups (hereinafter referred to as “plurality of groups”). Further, let the acting force per unit length be w, the deflection be y, and the reference radial position of the inner peripheral convex portion 203 be x. At this time, the slope (θ)dy/dx is represented by the following formula (1). In addition, as the distance L, a distance obtained by taking an average of the distances between the outer peripheral side convex portions 202 and the inner peripheral side convex portions 203 included in each of the plurality of groups may be used.

上述算式(1)中的斜率dy/dx在x=L時最大，由以下的算式(2)表示。

The slope dy/dx in the above formula (1) is maximum when x=L, and is expressed by the following formula (2).

這裡，上述算式(2)中的負號表示斜率dy/dx是逆時針旋轉(CCW)的旋轉方向。另外，若設真空源產生的吸引壓為吸引壓力Pv，縱深尺寸為b，則每單位長度的作用力w由以下的算式(3)表示。

Here, the negative sign in the above-mentioned formula (2) indicates that the slope dy/dx is a rotation direction of counterclockwise rotation (CCW). In addition, assuming that the suction pressure generated by the vacuum source is the suction pressure Pv and the depth dimension is b, the acting force w per unit length is expressed by the following formula (3).

這裡，設單側自由的梁中的面積二次矩為E=1/12bh ³，若將上述算式(3)代入上述算式(2)，則能夠得到以下的算式(4)。

Here, assuming that the second moment of area in a beam free on one side is E=1/12bh ³ , and substituting the above equation (3) into the above equation (2), the following equation (4) can be obtained.

而且，變形dx由以下的算式(5)表示。

Furthermore, deformation dx is represented by the following formula (5).

另外，嚴格地說，外周側凸部202在藉由吸引等對基板110施加了負載時，因基板110的變形，不是由該外周側凸部202的中心部(外周側凸部的中心軸上的支承面)，而是由從中心部偏離的角部來支承基板110。因此，這種情況下的上述距離L(mm)，嚴格地說是從相對於該外周側凸部202之基板110的中心方向之外周側凸部202的角部到隔著隔壁204與該外周側凸部相鄰配置之內周側凸部203的中心軸為止的距離。因為在算出上述變形時，距離L的距離越長則變形越大，所以，為了在安全方面計算，變形的算出採用上述的距離L。

Strictly speaking, when the outer peripheral convex portion 202 applies a load to the substrate 110 by suction or the like, the deformation of the substrate 110 is not performed by the central portion of the outer peripheral convex portion 202 (on the central axis of the outer peripheral convex portion). support surface), but the substrate 110 is supported by the corners deviated from the center. Therefore, the above-mentioned distance L (mm) in this case is strictly speaking from the corner of the outer peripheral side convex portion 202 in the direction of the center of the substrate 110 with respect to the outer peripheral side convex portion 202 to the space between the partition wall 204 and the outer peripheral side. The side protrusions are arranged adjacent to each other by a distance from the central axis of the inner peripheral side protrusion 203 . When the above-mentioned deformation is calculated, the longer the distance L is, the larger the deformation becomes. Therefore, the calculation of the deformation uses the above-mentioned distance L for calculation in terms of safety.

Here, as an example, if E=160GPa, Pv=0.1MPa, L=2mm, and h=0.7mm are substituted into the above formula (5) according to the design value of a general collet, dx=1.29nm can be obtained. For example, if the allowable amount of an overlay error relative to the ideal level is 1.5 nm as an example, the allowable amount remains only 0.29 nm. Furthermore, for example, even if the allowable amount of the overlay error is 3 nm, 5 nm, etc. with respect to the standard of the ideal level, the deformation of 1.29 nm has a large influence on the patterning process of the substrate 110 . Therefore, after suction-holding the substrate 110 , it is necessary to suction-hold the substrate 110 in a state where deformation is reduced in order to perform processing such as patterning.

Therefore, in Example 1, it is possible to provide a chuck in which deformation is reduced by setting the arrangement positions of the partition wall 5 in a predetermined relationship with respect to the convex portion 2 described later. Hereinafter, the substrate holding device 101 of the first embodiment will be described in detail with reference to FIGS. 3 , 4 and 5 .

FIG. 3 is a diagram illustrating the substrate holding device 101 of the first embodiment. FIG. 3A is a plan view of the substrate holding device 101 viewed from the +Z direction. FIG. 3B is a partial cross-sectional view of the substrate holding device 101 of FIG. 3A . Hereinafter, the substrate holding device 101 of the first embodiment will be described in detail with reference to FIGS. 3A and 3B . The substrate holding device 101 of the first embodiment includes a chuck 1 and a suction unit and a control unit which are not shown.

The chuck 1 is formed in a circular shape with a diameter smaller than that of the substrate 110 , and includes a plurality of pin-shaped protrusions 2 , a partition wall (first partition wall) 5 , and a suction port (first suction port) 6 . In addition, the chuck 1 is arranged on the substrate stage 102 .

The convex portion 2 is a plurality of pin-shaped convex portions (pins) arranged on the bottom of the chuck 1 , and when the substrate 110 is placed on the chuck 1 , the back surface of the substrate 110 comes into contact with the upper surface of the convex portion 2 . . The protrusions 2 are arranged on the bottom of the chuck 1 in a grid pattern with a predetermined distance L (mm). Although the diameter of the convex part 2 varies according to the specifications of the chuck 1, the general diameter is about φ0.2 mm. In addition, as an arrangement of the protrusions 2 , other than a grid-like arrangement, concentric arrays may also be used, or an angular arrangement may be used, for example, a 60-degree staggered lattice-like arrangement. In addition, a random arrangement may be used, or a combination of these may be used.

The convex part 2 includes a plurality of pin-shaped convex parts (outer peripheral side convex part, first convex part) 3, a plurality of pin-shaped convex parts (inner peripheral side convex part, second convex part) 4, and outer peripheral side convex parts. A plurality of pin-shaped protrusions (third protrusions) that are different from the inner peripheral side protrusions 3 and 4 . The outer peripheral convex portion 3 is disposed outside the partition wall 5 so as to be in contact with the rear surface in the outer peripheral direction of the substrate 110 . The outer peripheral convex portion 3 is a plurality of convex portions arranged on the outer periphery having the same radius as that of the substrate 110 . The outer peripheral convex portion 3 illustrated in FIG. 3 is disposed on the outermost peripheral side (outermost periphery) of the chuck 1 . The inner peripheral protrusion 4 is arranged on the inner side of the partition wall 5 so as to be in contact with the rear surface of the substrate 110 in the inner peripheral direction. The plurality of inner peripheral protrusions 4 are arranged on the inner periphery having the same radius as the substrate 110 . The inner peripheral side convex part 4 illustrated in FIG. 3 is arranged adjacent to the outer peripheral side convex part 3 arranged at the bottom of the outermost peripheral side via the partition wall 5 . In Embodiment 1, the plurality of convex portions 2 other than the third convex portion are constituted by a plurality of groups, and each group includes the outer circumferential side convex portion 3 disposed outside the partition wall 5 and the convex portion disposed inside the partition wall 5. And the inner peripheral side convex part 4 is located adjacent to the outer peripheral side convex part 3 via the partition wall 5 .

At least one partition wall 5 is annularly arranged at the bottom of the chuck 1 so as to surround a part of the plurality of protrusions 2 . The partition wall 5 of the first embodiment is arranged at a position close to the inner peripheral side convex portion 4 adjacent to the outer peripheral side convex portion 3 via the partition wall 5 . The partition wall 5 is formed lower than the plurality of inner peripheral protrusions 4 . The height of the plurality of inner peripheral convex portions 4 means, for example, an average height. In addition, the height of the partition wall 5 may be lower than the height of a specific inner peripheral convex portion 4 (for example, the lowest inner peripheral convex portion 4 among a plurality of inner peripheral convex portions 4 ). In addition, the height of the partition wall 5 may be formed to be lower by about 1 to 2 μm than the upper surfaces of the plurality of convex portions 2 . Even if it is formed to be about 1 to 2 μm lower, the vacuum pressure when sucking and holding the substrate 110 by sucking the space (area) between the back surface of the substrate 110 and the chuck 1 generated by the suction unit described later in a gap of about 1 to 2 μm The decrease is also small enough to not be a problem. In addition, even if foreign matter such as dust and particles with a diameter smaller than the difference of about 1 to 2 μm adheres to the partition wall 5, the probability of the attached foreign matter contacting the back surface of the substrate 110 is very low. Therefore, even if the height of the partition wall 5 is formed to be higher than the plurality The upper surface of each convex portion 2 is lower by about 1 to 2 μm, which is not a problem.

The suction port 6 is a through hole formed in the chuck 1, and in the first embodiment, it functions as a suction port when the suction section described later sucks (exhausts) the space between the back surface of the substrate 110 and the chuck 1. Function. In addition, only one suction port 6 is provided in FIG. 3 , but the present invention is not limited thereto, and more than one suction port 6 may be formed in the chuck 1 .

The suction unit is a vacuum source (not shown) configured to suck the space between the back surface of the substrate 110 and the chuck 1 by vacuum suction or the like. The suction part starts to operate according to the signal from the control part 109, and can suck the space between the back surface of the substrate 110 and the chuck 1 through the flow path such as piping connected to the suction part and the suction port 6, thereby allowing the chuck 1 The substrate 110 is adsorbed. In addition, the suction unit is not limited to being disposed on the substrate holding device 101 , and may be disposed outside the substrate holding device 101 or outside the exposure device 100 .

FIG. 4 is a diagram illustrating a material mechanics model at the position where partition walls 5 are arranged in Example 1. FIG. 4A is a partial cross-sectional view of the substrate holding device 101 of the first embodiment. FIG. 4B is a diagram illustrating a material mechanics model in the partial cross-sectional view of FIG. 4A .

In FIG. 4B , the inner peripheral convex portion 4 is approximately a fixed end here because the slope dy/dx is 0 (zero). In addition, in FIG. 4B, the force generated by the vacuum pressure P acts in the form of a uniform load between the position from the inner peripheral side convex part 4 to the partition wall 5, and the force does not act on the position between the partition wall 5 and the inner peripheral side convex part. The outer peripheral side convex part 3 adjacent to the part 4. Therefore, since the slope dy/dx becomes free at the outer peripheral side convex portion 3 , it is approximately a free end here. This is the same so-called statically indeterminate beam as in Fig. 2. In addition to the balance of force and moment, the condition that the displacement at the convex portion 3 on the outer circumference is equal to 0 can be used to calculate the reaction force Rf at the fixed end and the reaction force at the free end. Force Rp and moment Mf at the fixed end. Next, calculation of deformation of the substrate holding device 101 of the first embodiment using the material mechanics model shown in FIG. 4B will be described.

Assuming that the deflection is y, in the inner peripheral side convex portion 4 adjacent to the outer peripheral side convex portion 3 included in each of the plurality of groups through the partition wall 5, the outer peripheral side convex portion 4 arranged at a linear distance from the outer peripheral side convex portion The distance from the inner peripheral convex portion 4 at the closest position to the portion 3 to the partition wall 5 is defined as a distance s. Next, let the distance between the outer peripheral side convex part 3 and the inner peripheral side convex part 4 included in each of the plurality of groups be the distance L. In addition, the distance L may use the average value of the distance between the outer peripheral side convex part 3 and the inner peripheral side convex part 4 contained in each of several groups. At this time, the equation of the deflection can be represented by the following formula (6) when the above-mentioned Rf, Rp, and Mf are used and 0<x≦s.

而且，在設為s＜x≤L的情況下，能夠由以下的算式(7)表示。

Furthermore, when s<x≦L, it can be expressed by the following formula (7).

Next, by integrating the above formula (7) and adding the condition of dy/dx=0 to the fixed end, the following formula (8) can be obtained.

(0＜x≤s)    (8) 接著，藉由將上述算式(7)積分，加入在隔壁5的配置位置上的斜率dy/dx呈連續這樣的條件，能夠得到以下的算式(9)。

(0<x≤s) (8) Next, by integrating the above equation (7) and adding the condition that the slope dy/dx is continuous at the positions where the partition walls 5 are arranged, the following equation (9) can be obtained.

(s＜x≤L)  (9)

(s<x≤L) (9)

In addition, when Rf and Mf are calculated from the aforementioned displacement balance, force balance, and moment balance, the following equations (10) and (11) can be obtained using u=s/L as a parameter.

Furthermore, assuming x=L, and substituting the above formula (3) and the second moment of area E=1/12bh ³ into the above formula (9), the following formula (12) can be obtained.

這裡，上述算式(12)中的斜率dy/dx將順時針旋轉(CW)用+(正號)表示。另外，若預先將逆時針旋轉(CCW)定義為+，則乘以-1就相同。另外，若斜率dy/dx乘以厚度h/2，則變形dx可藉由以下的算式(13)得到。

Here, the slope dy/dx in the above formula (12) is represented by + (positive sign) for the clockwise rotation (CW). Also, if the counterclockwise rotation (CCW) is defined as + in advance, multiplying by -1 is the same. In addition, if the slope dy/dx is multiplied by the thickness h/2, the deformation dx can be obtained by the following formula (13).

Next, u is determined so as to satisfy the following expression (14) based on the deformation dx obtained by the above expression (13).

上述算式(14)中的校正係數是指考慮了實質上的距離L的係數，雖然按照凸部2的配置位置而不同，但是，是接近1的數字。

The correction coefficient in the above formula (14) is a coefficient that takes into account the substantial distance L, and is a number close to 1 although it differs depending on the arrangement position of the convex portion 2 .

Alternatively, dz may be the standard of flatness, and the length of the portion protruding in the outer peripheral direction (outer direction) than the outer peripheral convex portion 3 disposed on the outermost peripheral side of the substrate 110, that is, the so-called overhang length may be oh. , u is determined so as to satisfy the following formula (15).

FIG. 5 is a diagram illustrating the relationship between the arrangement position and deformation of the partition wall 5 in the first embodiment. In the graph in Fig. 5, for example, E=160GPa, Pv=0.1MPa, which are the design values of the general chuck 1, are substituted into the correction coefficient ×(h/2)×PvL ³ /4Eh ³ (3u ⁴ -4u ³ ) , L=2mm, h=0.7mm and calculate, take this calculated value as the vertical axis. In addition, the horizontal axis takes u as a variable.

According to FIG. 5 , as long as u<0.5, the deformation dx can be reduced to only 0.4 nm at most, and the influence of adsorption and holding of the substrate 110 and patterning process on the substrate 110 can be greatly reduced.

In addition, actually, a plurality of convex portions 2 are arranged two-dimensionally, and the actual distance L between the convex portions 2 is substantially smaller than the above-defined distance L including the above-mentioned reduction near the corners of the convex portions. (short distance). Therefore, if the distance L used in the calculation of the above-mentioned deformation is larger than the actual arrangement (the distance is long), the deformation becomes large. In Embodiment 1, the above-mentioned distance L is used for calculation of deformation in order to calculate in safety.

As described above, in Example 1, deformation can be reduced by adjusting the arrangement position of the partition wall 5 to satisfy u<0.5 (the arrangement position of the partition wall 5 is in a predetermined relationship with respect to the convex portion 2 ). Thereby, it is possible to provide a chuck capable of suction-holding the substrate 110 in an optimal state when processing such as pattern formation is performed.

(Example 2) The substrate holding device 101 of Embodiment 2 is further provided with: an auxiliary partition (second partition) 7 as a partition different from the partition (first partition) 5 in the chuck 1 of Embodiment 1, and an auxiliary partition (second partition) 7 as a partition different from the suction port 6. The suction port (the second suction port) 8 of the suction port. That is, in the substrate holding device 101 of the second embodiment, the first partition wall is composed of adjacent double-layered partition walls. In addition, in Example 2, the outer partition wall among the two-layered partition walls is referred to as an auxiliary partition wall (second partition wall). Hereinafter, the substrate holding device 101 of the second embodiment will be described with reference to FIG. 6 . FIG. 6 is a diagram illustrating a substrate holding device 101 of the second embodiment. FIG. 6A is a plan view of the substrate holding device 101 viewed from the +Z direction. FIG. 6B is a partial cross-sectional view of the substrate holding device 101 of FIG. 6A . In addition, since the structure of the substrate holding apparatus 101 of Example 2 is the same as the structure of the substrate holding apparatus 101 of Example 1, description of the overlapping part is abbreviate|omitted.

The chuck 1 of the second embodiment is the same as that of the first embodiment, and includes a plurality of pin-shaped protrusions 2 , a partition wall 5 , and a suction port 6 , and further includes an auxiliary partition wall 7 and a suction port 8 .

The auxiliary partition wall 7 is arranged between the partition wall 5 and the outer peripheral convex portion 3 adjacently arranged on the outer peripheral side of the partition wall 5 . That is, it is disposed closer to the outer peripheral side convex portion 3 than the inner peripheral side convex portion 4 . In addition, the arrangement positions of the auxiliary partition walls 7 at this time are based on comparing the average values of the positions of the convex portions 2 included in the plurality of groups (hereinafter referred to as "plurality of groups") shown in Example 1. After that, configure it. In addition, the arrangement position of the auxiliary partition wall 7 is preferably as close as possible to the outer peripheral side protrusion 3 adjacent to the outer peripheral side of the partition wall 5 than the central position of the distance L. In Example 2, the auxiliary partition wall 7 is provided so that u≒1. In addition, as the arrangement position of the partition wall 5, it is the same as that of the first embodiment that it is arranged so that u<0.5 is satisfied. In addition, the height of the auxiliary partition wall 7 is formed to be lower than the height of the outer peripheral side protrusions 3 included in each of the plurality of groups. The height of the outer peripheral side protrusions 3 included in each of the plurality of groups means, for example, an average height. In addition, it is also possible to make the height of the auxiliary partition wall 7 higher than the height of a specific outer peripheral convex portion 3 (for example, the outer peripheral convex portion 3 with the lowest height among the outer peripheral convex portions 3 included in each of a plurality of groups). )Low.

The suction port 8 has the same function as the suction port 6 of the first embodiment, and is formed between the partition wall 5 and the auxiliary partition wall 7 . The suction port 8 is similar to the suction port 6 of the first embodiment, and is connected to the suction part through a flow path such as a pipe. Furthermore, the suction unit in the substrate holding device 101 of the second embodiment is provided with unshown valves (switching valves) for opening and closing the flow paths for suction on the flow paths connecting the suction ports 6 and 8 to the suction portions. valve). In Example 2, the valve arranged between the suction port 6 and the suction part is called a first valve, and the valve arranged between the suction port 8 and the suction part is called a second valve.

In Example 2, when the chuck 1 sucks and holds the substrate 110 , suction is performed through the suction port 6 and the suction port 8 . Hereinafter, the suction process of the substrate 110 in the second embodiment will be described. In addition, the suction process is controlled by causing a not-shown control unit of the substrate holding device 101 to execute a computer program.

First, a control unit (not shown) sends an operation command to the suction unit to start suction (exhaust). The back surface of the substrate 110 and the space of the chuck 1 are sucked through the suction port 6 and the suction port 8 by starting the suction of the suction unit. As a result, the area on the inside of the substrate 110 relative to the auxiliary partition wall 7 becomes a suction area, and a larger suction force is generated, so that even a substrate with a large warp can be corrected for warp. In addition, when the warpage of the substrate 110 is corrected and suction is completed, deformation occurs.

Next, a control unit (not shown) controls the second valve to stop the suction through the region of the suction port 8 . Thus, the space between the partition wall 5 and the auxiliary partition wall 7 is communicated with the atmosphere from the suction port 8, and the sucked area is transferred to the area passing through the suction port 6, that is, the area closer to the inner side of the substrate 110 than the partition wall 5, so that the deformation is reduced. . In addition, various controls in these suction processes may be performed by the control unit 109 .

The substrate 110 once corrected has a low probability of returning to its original shape even if the suction on the outer peripheral side (peripheral portion) of the substrate 110 stops or the suction force decreases. Therefore, deformation is kept small as it is.

As mentioned above, in Example 2, deformation|transformation can be reduced similarly to Example 1, and also the warpage of the board|substrate 110 can be reduced. Thereby, it is possible to provide a chuck capable of suction-holding the substrate 110 in an optimal state when processing such as pattern formation is performed.

In addition, in some substrates 110 with a large warpage, the warpage may recover in many cases when the suction port 8 is communicated with the atmosphere. In this case, a negative pressure of about α×minus 1 air pressure (α is an integer smaller than 1) may be applied from the suction unit through the suction port 8 according to the state of warping of the substrate 110 . Alternatively, before the back surface of the substrate 110 and the space between the chuck 1 are sucked by the suction unit, the pressure from the suction port 8 is set to a negative pressure of about minus 1 atmosphere, and the pressure from the suction port 8 is set to α×minus 1 atmosphere ( α is an integer smaller than 1) negative pressure. Thereby, it is not necessary to switch the substrate 110 before and after the correction, and warp recovery can be avoided.

(Example 3) In Example 3, it is possible to provide a chuck in which deformation is reduced by setting the heights of the inner peripheral side convex portion 4 and the outer peripheral side convex portion 3 described later into a predetermined relationship. Hereinafter, the substrate holding device 101 of the third embodiment will be described in detail with reference to FIGS. 7A to 9 .

FIG. 7 is a diagram illustrating a substrate holding device 101 of the third embodiment. FIG. 7A is a plan view of the substrate holding device 101 viewed from the +Z direction. FIG. 7B is a partial cross-sectional view of the substrate holding device 101 of FIG. 7A . Hereinafter, the substrate holding device 101 of the third embodiment will be described in detail with reference to FIG. 7 . The substrate holding device 101 of the third embodiment includes a chuck 1 and a suction unit and a control unit which are not shown.

The chuck 1 is formed in a circular shape with a diameter smaller than that of the substrate 110 , and includes a plurality of pin-shaped protrusions 2 , a partition wall (first partition wall) 5 , and a suction port (first suction port) 6 . In addition, the chuck 1 is arranged on the substrate stage 102 .

The protrusions 2 are a plurality of pin-shaped protrusions arranged on the bottom of the chuck 1 , and when the substrate 110 is placed on the chuck 1 , the back surface of the substrate 110 comes into contact with the upper surface of the protrusions 2 . The protrusions 2 are arranged on the bottom of the chuck 1 in a grid pattern at a predetermined distance L (mm). Although the diameter of the convex part 2 varies according to the specifications of the chuck 1, the general diameter is about φ0.2 mm. In addition, as an arrangement of the protrusions 2 , other than a grid-like arrangement, concentric arrays may also be used, or an angular arrangement may be used, for example, a 60-degree staggered lattice-like arrangement. In addition, a random arrangement may be used, or a combination of these may be used.

The convex part 2 includes a plurality of pin-shaped convex parts (outer peripheral side convex part, first convex part) 3, a plurality of pin-shaped convex parts (inner peripheral side convex part, second convex part) 4, and outer peripheral side convex parts. A plurality of pin-shaped protrusions (third protrusions) that are different from the inner peripheral side protrusions 3 and 4 . The outer peripheral convex portion 3 is disposed outside the partition wall 5 so as to be in contact with the rear surface in the outer peripheral direction of the substrate 110 . The outer peripheral convex portion 3 is a plurality of convex portions arranged on the outer periphery having the same radius as that of the substrate 110 . The outer peripheral convex portion 3 illustrated in FIG. 7 is disposed on the outermost peripheral side (outermost periphery) of the chuck 1 . The inner peripheral protrusion 4 is arranged on the inner side of the partition wall 5 so as to be in contact with the rear surface of the substrate 110 in the inner peripheral direction. The plurality of inner peripheral protrusions 4 are arranged on the inner periphery having the same radius as the substrate 110 . The inner peripheral convex portion 4 illustrated in FIG. 7 is disposed adjacent to the outer peripheral convex portion 3 disposed at the bottom of the outermost peripheral side with the partition wall 5 interposed therebetween. In Embodiment 3, the plurality of convex portions 2 other than the third convex portion are constituted by a plurality of groups, and each group includes the outer peripheral side convex portion 3 disposed outside the partition wall 5 and the convex portion disposed inside the partition wall 5. And the inner peripheral side convex part 4 is located adjacent to the outer peripheral side convex part 3 via the partition wall 5 . Although it will be described later, the outer peripheral side convex portion 3 included in each of the plurality of groups has a height lower than that of the inner peripheral side convex portion 4 .

At least one partition wall 5 is annularly arranged at the bottom of the chuck 1 so as to surround a part of the plurality of protrusions 2 . The suction port 6 is a through hole formed in the chuck 1, and in Example 3, it functions as a suction port when the suction section described later sucks (exhausts) the space between the back surface of the substrate 110 and the chuck 1. Function. In addition, only one suction port 6 is provided in FIG. 7 , but the present invention is not limited thereto, and more than one suction port 6 may be formed in the chuck 1 .

The suction unit is a vacuum source (not shown) configured to suck the space between the back surface of the substrate 110 and the chuck 1 by vacuum suction or the like. The suction part starts to operate according to a signal from the control part 109, and the space between the back surface of the substrate 110 and the chuck 1 can be sucked through a flow path such as a pipe connected to the suction part and the suction port 6, so that the chuck 1 The substrate 110 is adsorbed. In addition, the suction unit is not limited to being disposed on the substrate holding device 101 , and may be disposed outside the substrate holding device 101 or outside the exposure device 100 .

Next, let the height of the outer peripheral side convex part 3 contained in each of the aforementioned plural groups (hereinafter referred to as "plural groups") be ho. Furthermore, assuming that the height of the inner peripheral convex portion 4 included in each of the plurality of groups is hi, a desired ho value will be described below with reference to FIGS. 8 and 9 . In addition, in Example 3, ho is the average height of the outer peripheral side protrusions 3 included in each of the plurality of groups, and hi is the inner peripheral side protrusions included in each of the plurality of groups. 4 average height. FIG. 8 is a diagram illustrating a material mechanics model in a cantilever beam in Example 3 in which the outer peripheral convex portion 3 is removed. The model shown in Figure 8 is called a cantilever beam. FIG. 9 is a cross-sectional view illustrating the chuck 1 of the third embodiment.

FIG. 9 shows a deflection model 2min of the substrate 110 when the outer peripheral protrusion 3 as shown in FIG. 8 is removed, and a deflection model 2j of the substrate 110 when ho=hi.

Here, assume that the slope of the deflection model illustrated in FIG. 9 is dy/dx, the deflection is y, the radial position of the convex part 4 on the inner peripheral side is x, and the outer peripheral side included in each of the plurality of groups is The distance between the convex portion 3 and the inner peripheral side convex portion 4 is L. Accordingly, the slope dy/dx with respect to u=x/L can be expressed by the following formula (16), and the deflection y can be expressed by the following formula (17).

上述算式(18)表示，若ho比hi-(PvL ⁴)/(Eh ³)小，基板110的背面不再接觸外周側凸部3的支承面。因此，藉由滿足以下的算式(19)，與設為hi=ho時相比，能夠降低斜率dy/dx，能夠降低變形。

Furthermore, when u=1, y _max can be represented by the following formula (18).

The above formula (18) shows that if ho is smaller than hi-(PvL ⁴ )/(Eh ³ ), the back surface of the substrate 110 does not contact the supporting surface of the outer peripheral convex portion 3 . Therefore, by satisfying the following formula (19), the slope dy/dx can be lowered than when hi=ho, and deformation can be reduced.

Moreover, the height of the partition wall 5 is lower than the inner peripheral side convex part 4 contained in each of several groups, and is below the height of the outer peripheral side convex part 3 contained in each of a plurality of groups. Because if the partition wall 5 is made higher than the outer peripheral side protrusions 3 included in each of the plurality of groups, the partition wall 5 will exert the same function as the outer peripheral side protrusions 3 included in each of the plurality of groups. Function. In addition, the arrangement position of the partition wall 5 is closer to the outer peripheral side convex part 3 included in each of the plurality of groups than the inner peripheral side convex part 4 included in each of the plurality of groups. The arrangement positions of the partition walls 5 at this time are arranged after comparing the average values of the positions of the protrusions included in each of the plurality of groups. It is also preferable that the partition walls 5 are arranged as close as possible to the outer peripheral side convex portions 3 included in the plurality of groups, and in Example 3, the partition walls 5 are arranged so that u≒1.

Hereinafter, in Example 3, the height of hi relative to ho is set so that hi-ho<(PvL ⁴ )/(Eh ³ ) is satisfied, and deformation can be reduced. Accordingly, it is possible to provide a chuck capable of absorbing and holding the substrate 110 in an optimal state during processing such as pattern formation.

In addition, for example, when Pv=0.1013MPa, L=2mm, and E=160GPa are substituted into the above formula (18), when h=0.7mm, y _max =44.3nm. In these cases, the distortion can be reduced by designing the hi-ho to be smaller than, for example, about 45 nm.

(Example 4) In the substrate holding device 101 of the fourth embodiment, the ratio of the cross-sectional area of the outer peripheral protrusions 3 included in each of the plurality of groups shown in the third embodiment (hereinafter referred to as "the plurality of groups") to the plurality of The cross-sectional area of the inner peripheral side protrusions 4 included in each group is small. In addition, since the structure of the substrate holding device 101 is the same as that of the substrate holding device 101 of the third embodiment, the description of the overlapping parts will be omitted.

In Example 4, let the cross-sectional area of the outer peripheral side convex portion 3 included in each of the plurality of groups be So, and let the inner peripheral side convex portion included in each of the plurality of groups be When the cross-sectional area of 4 is Si, the outer peripheral side convex portion 3 and the inner peripheral side convex portion 4 are designed and processed so that Si>So. Thereby, during machining, the machining resistance of the outer peripheral convex portion 3 is reduced, and the machining of the convex portion becomes easy. In addition, in Example 4, So is the average value of the cross-sectional area of the outer peripheral convex portion 3 included in each of the plurality of groups, and Si is the inner peripheral area included in each of the plurality of groups. The average value of the cross-sectional area of the side convex portion 4 .

Furthermore, by reducing the machining resistance, the amount of removal of the outer peripheral side protrusions 3 included in each of the plurality of groups increases, resulting in hi>ho. Furthermore, the rigidity in the vertical direction of the outer peripheral protrusions 3 included in each of the plurality of groups is smaller than the rigidity in the vertical direction of the inner peripheral protrusions 4 included in each of the plurality of groups. Accordingly, when sucked by the suction unit, the amount of compression in the vertical direction of the substrate 110 increases, resulting in hi>ho. In addition, as the processing of the convex portion 2, for example, processing based on lapping processing can be considered, but it is not limited to this, as long as it is a method that can perform processing such that Si>So, other methods can also be used. processing.

As described above, in Embodiment 4, the outer peripheral side convex portion 3 included in each of the plurality of groups and the inner peripheral side convex portion included in each of the plurality of groups are performed so that Si>So becomes Si>So. 4 processing. As a result, the machining accuracy can be improved and the machining time can be shortened. Furthermore, similarly to the third embodiment, it is possible to provide a chuck capable of reducing deformation and suction-holding the substrate 110 in an optimal state during processing such as pattern formation.

(Example 5) The substrate holding device 101 of Embodiment 5 is further provided with: an auxiliary partition wall (second partition wall) 7 as a partition wall different from the partition wall (first partition wall) 5 in the chuck 1 of Embodiment 3, and an auxiliary partition wall (second partition wall) 7 as a partition wall different from the suction port 6. The suction port of the suction port (the second suction port) 8. That is, in the substrate holding device 101 of the fifth embodiment, the first partition walls are formed of adjacent double-layered partition walls. In addition, in Example 5, the outer partition wall among the two-layered partition walls is referred to as an auxiliary partition wall (second partition wall). Hereinafter, a substrate holding device 101 according to Embodiment 5 will be described with reference to FIG. 10 . 10A and 10B are diagrams illustrating a substrate holding device 101 of Example 5. FIG. FIG. 10A is a plan view of the substrate holding device 101 viewed from the +Z direction. FIG. 10B is a partial cross-sectional view of the substrate holding device 101 of FIG. 10A . In addition, since the structure of the substrate holding apparatus 101 of Example 5 is the same as the structure of the substrate holding apparatus 101 of Example 3, description of the overlapping part is abbreviate|omitted.

The chuck 1 of Example 5 includes a plurality of pin-shaped protrusions 2 , partition walls 5 , and suction openings 6 , and further includes auxiliary partition walls 7 and suction ports 8 , as in Example 3.

The auxiliary partition wall 7 is arranged between the partition wall 5 and the inner peripheral convex portion 4 arranged next to the inner peripheral side of the partition wall 5 . The position where the auxiliary partition wall 7 is disposed is preferably closer to the inner peripheral convex portion 4 disposed next to the inner peripheral side of the partition wall 5 than the central position of the distance L. For example, it is configured to satisfy u<0.5. In addition, as the arrangement position of the partition wall 5 , it is the same as that in the third embodiment, where u≒1 is arranged.

The height of the auxiliary partition wall 7 is formed to be lower than the height of the inner peripheral side protrusions 4 included in each of the plurality of groups. The height of the inner peripheral side protrusions 4 included in each of the plurality of groups means, for example, an average height. In addition, it is also possible to make the height of the auxiliary partition wall 7 higher than the height of a specific inner peripheral convex portion 4 (for example, the inner peripheral side with the lowest height among the inner peripheral convex portions 4 included in each of a plurality of groups). The convex part 4) is low. In addition, the height of the auxiliary partition wall 7 may be formed to be lower by about 1 to 2 μm than the upper surfaces of the plurality of convex portions 2 . Even if it is formed to be lower by about 1 to 2 μm, due to the gap of about 1 to 2 μm, the vacuum pressure generated by the suction part to suck the back surface of the substrate 110 and the space (region) of the chuck 1 to suck and hold the substrate 110 is limited. The drop is also small enough to not be an issue. Also, even if foreign matter such as dust or particles with a diameter smaller than a difference of about 1 to 2 μm adheres to auxiliary partition wall 7 , the probability of the attached foreign matter coming into contact with the back surface of substrate 110 is very low. Therefore, even if the height of the auxiliary partition wall 7 is formed to be lower by about 1 to 2 μm than the upper surfaces of the plurality of protrusions 2 , there is no problem.

The suction port 8 has the same function as the suction port 6 of the third embodiment, and is formed between the partition wall 5 and the auxiliary partition wall 7 . The suction port 8 is similar to the suction port 6 of the third embodiment, and is connected to the suction part through a flow path such as piping. Furthermore, the suction unit in the substrate holding device 101 of the fifth embodiment is provided with unshown valves (switching valves) for opening and closing the flow paths for suction on the flow paths connecting the suction ports 6 and 8 to the suction portions. valve). In Example 5, the valve arranged between the suction port 6 and the suction part is called a first valve, and the valve arranged between the suction port 8 and the suction part is called a second valve.

In Example 5, when the chuck 1 sucks and holds the substrate 110 , suction is performed through the suction port 6 and the suction port 8 . Hereinafter, the suction process of the substrate 110 in the fifth embodiment will be described. In addition, the suction process is controlled by causing a not-shown control unit of the substrate holding device 101 to execute a computer program.

First, a control unit (not shown) sends an operation command to the suction unit to start suction (exhaust). The back surface of the substrate 110 and the space of the chuck 1 are sucked through the suction port 6 and the suction port 8 by starting the suction of the suction unit. As a result, the area on the inside of the substrate 110 from the partition wall 5 becomes a suction area, and a larger suction force is generated, so that even a substrate with a large warpage can be corrected for warpage. In addition, when the warpage of the substrate 110 is corrected and suction is completed, deformation occurs.

Next, a control unit (not shown) controls the second valve to stop the suction of the area passing through the suction port 8 . Thereby, the space between the partition wall 5 and the auxiliary partition wall 7 is communicated with the atmosphere from the suction port 8, and the sucked area is transferred to the area passing through the suction port 6, that is, the area closer to the inner side of the substrate 110 than the auxiliary partition wall 7, so that deformation reduce. In addition, various controls in these suction processes may be performed by the control unit 109 .

The substrate 110 once corrected has a low probability of returning to its original shape even if the suction on the outer peripheral side (peripheral portion) of the substrate 110 stops or the suction force decreases. Therefore, deformation is kept small as it is.

As mentioned above, in Example 5, deformation|transformation can be reduced similarly to Example 3, and also the warpage of the board|substrate 110 can be reduced. Thereby, it is possible to provide a chuck capable of suction-holding the substrate 110 in an optimal state when processing such as pattern formation is performed.

In addition, in some substrates 110 with a large warp, the warp may recover when the suction port 8 is communicated with the atmosphere. In this case, a negative pressure of about α×minus 1 air pressure (α is an integer smaller than 1) may be applied from the suction unit through the suction port 8 according to the state of warping of the substrate 110 . Alternatively, before the back surface of the substrate 110 and the space between the chuck 1 are sucked by the suction unit, the pressure from the suction port 8 is set to a negative pressure of about minus 1 atmosphere, and the pressure from the suction port 8 is set to α×minus 1 atmosphere ( α is an integer smaller than 1) negative pressure. Thereby, it is not necessary to switch the substrate 110 before and after the correction, and warp recovery can be avoided.

In addition, for example, at least two of the substrate holding devices 101 of the above-described embodiments may be combined. That is, a substrate holding device 101 using a chuck obtained by combining at least two of the chucks 1 shown in FIGS. 3 , 6 , 7 and 10 may also be used.

In addition, in each of the above-mentioned embodiments, the protrusions 2 are arranged on the bottom of the cartridge 1 in a grid pattern at a predetermined distance, but the present invention is not limited thereto. For example, the distance between the protrusions 2 may be arbitrarily set on the inner peripheral side and the outer peripheral side of the substrate 110 . Furthermore, the distance may not be uniform but may be non-uniform.

In addition, the chuck 1 in each of the above-mentioned embodiments is made into a chuck of a vacuum suction method, but it is not limited thereto. A chuck used in combination with other methods such as the electrostatic chuck method. In these cases, the vacuum pressure P in Example 5 may be replaced with another type of suction force, or may be obtained by adding a vacuum pressure to the suction force.

In addition, although the chuck 1 in each of the above-mentioned embodiments uses a pin chuck, it is not limited thereto, and may have other shapes. For example, there may be a so-called ring chuck in which concentric annular recesses serving as suction grooves and concentric annular protrusions serving as a substrate supporting surface may be alternately formed. In addition, the partition walls are not limited to the partition wall 5 and the auxiliary partition wall 7 , and partition walls other than the partition wall 5 and the auxiliary partition wall 7 may be arranged on the chuck 1 .

(Example of manufacturing method of article) Next, an embodiment of a method of manufacturing a device using the exposure apparatus 100 of each of the above-described embodiments will be described. FIG. 11 shows the manufacturing flow of micro components (semiconductor wafers such as ICs and LSIs, liquid crystal panels, CCDs, thin-film magnetic heads, micromachines, etc.). In step 1 (circuit design), pattern design of components is performed.

In step 2 (mask creation), a mask (template, mold) forming a designed pattern is produced. On the other hand, in step 3 (wafer fabrication), wafers (substrates) are fabricated using materials such as silicon and glass. Step 4 (wafer process) is called the pre-process, using the mask and wafer prepared above, to form the actual circuit on the wafer by lithography technology.

The next step 5 (assembly) is called a post-process, which is a process of using the wafer produced in step 4 to perform semiconductor wafering, including the assembly process (dicing, bonding), packaging process (chip encapsulation), etc. process. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor element produced in step 5 are performed. Through such steps, the semiconductor element is completed and shipped (step 7).

Fig. 12 shows the detailed flow of the above-mentioned wafer procedure. In step 11 (oxidation), the surface of the wafer is oxidized. In step 12 (CVD), an insulating film is formed on the surface of the wafer. In step 13 (electrode formation), electrodes are formed on the wafer by evaporation. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (photoresist treatment), photoresist is coated on the wafer. In step 16 (exposure), the above-mentioned projection exposure apparatus arranges the circuit pattern of the mask on a plurality of pattern forming regions of the wafer, and performs transfer exposure. In step 17 (development), the exposed wafer is developed. In step 18 (etching), the part other than the developed photoresist image is removed. In step 19 (photoresist stripping), excess photoresist after etching is removed. By repeating these steps, a multilayer circuit pattern is formed on the wafer.

In this way, according to the method of manufacturing a device using the chuck 1 of this embodiment, since the distortion and warpage of the substrate are suppressed, the accuracy, yield, and the like of the device are improved. As a result, highly integrated elements that have been difficult to manufacture conventionally can be stably manufactured at low cost.

Above, the present invention has been described in detail according to its preferred embodiments, but the present invention is not limited to the invention of the above-mentioned embodiments, and various modifications can be made according to the gist of the present invention, and these are not excluded from the scope of the present invention outside.

In addition, a computer program that realizes part or all of the functions of the above-described embodiments of the control in the above-mentioned embodiments may be supplied to the substrate holding device 101, the substrate processing device, etc. through a network or various storage media. Furthermore, the program may be read and executed by a computer (or CPU, MPU, etc.) in the substrate holding device 101 or the substrate processing device. In this case, the program and the storage medium storing the program constitute the present invention.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. The claims of the present invention should be interpreted in the broadest way so as to cover all such modifications and equivalent structures and functions.

This application claims priority based on Japanese Patent Application No. 2021-032662 filed on March 2, 2021 and Japanese Patent Application No. 2021-124135 filed on July 29, 2021. All of these Japanese applications The contents are incorporated in this specification by reference.

1,200: Chuck 2,3,4,201,202,203: convex part 2j, 2min: flexure model 5,204: next door 6,8,205: suction port 7: Auxiliary next door 100: Exposure device 101: Substrate holding device 102: substrate carrier 103: reticle carrier 104: Reticle 105: Illumination optical system 106:Projection optical system 107: Off-axis oscilloscope 108: Measurement Department 109: Control Department 110: Substrate

[ FIG. 1 ] is a schematic diagram illustrating the configuration of an exposure apparatus of Example 1. [ FIG.

[ Fig. 2 ] is a diagram illustrating a material mechanics model of a beam with one side fixed and one side free subject to a uniform load.

[ Fig. 3A and Fig. 3B ] are diagrams illustrating the substrate holding device of the first embodiment.

[ FIGS. 4A and 4B ] are diagrams illustrating a material mechanics model of a cantilever beam.

[ Fig. 5 ] is an example showing the relationship between the arrangement position of the partition wall and the deformation in the first embodiment.

[FIG. 6A and FIG. 6B] are diagrams illustrating the substrate holding device of Example 2. [FIG.

[FIG. 7A and FIG. 7B] are diagrams illustrating the substrate holding device of Example 3. [FIG.

[ Fig. 8] Fig. 8 is a diagram illustrating a material mechanics model of a cantilever beam without the outer peripheral convex portion of Example 3.

[ Fig. 9 ] is a cross-sectional view illustrating a chuck of Example 3.

[ Fig. 10A and Fig. 10B ] are diagrams illustrating a substrate holding device according to Example 5. [Fig.

[ Fig. 11 ] is a flowchart illustrating a manufacturing procedure of a device.

[ Fig. 12 ] is a flowchart illustrating a wafer procedure.

[ FIGS. 13A and 13B ] are diagrams illustrating pin chucks used in a general substrate holding device.

1: Chuck

2,3,4: convex part

5: next door

6: Attraction port

101: Substrate holding device

110: Substrate

Claims (20)

A chuck used to adsorb and hold a substrate, The chuck system contains: a plurality of protrusions in contact with the back surface of the above-mentioned substrate held by suction, ring-shaped partition, and The bottom portion on which the above-mentioned plurality of protrusions and the above-mentioned partition wall are arranged, The plurality of protrusions are composed of a plurality of groups, and each group includes a first protrusion disposed outside the partition wall, and a first protrusion disposed inside the partition wall and adjacent to the first protrusion with the partition wall interposed therebetween. The position of the second convex part, Let the distance between the first convex portion and the second convex portion included in each of the plurality of groups be L, and the distance between the second convex portion and the partition wall be s , satisfy s/L<0.5. The chuck as described in claim 1, wherein, The height of the partition walls is lower than the height of the second protrusions included in each of the plurality of groups. The chuck as described in claim 1, wherein, The above-mentioned partition walls are composed of adjacent double-layer partition walls. The chuck as described in claim 3, wherein, The outer partition walls among the double-layered partition walls have a height lower than the height of the first protrusions included in each of the plurality of groups. The chuck as described in claim 1, wherein, The bottom portion is provided with a first suction port for sucking the inner peripheral side of the partition wall. The chuck as described in claim 3, wherein, The bottom part is provided with a second suction port for sucking between the partition walls of the above-mentioned two layers. The chuck as described in claim 1, wherein, The diameter of the partition wall is smaller than the diameter of the substrate. The chuck as described in claim 1, wherein, The chuck has a third convex portion which is a different convex portion from the plurality of convex portions. The chuck as described in claim 1, wherein, Let the height of the first convex part included in each of the plurality of groups be ho, and let the height of the second convex part included in each of the plurality of groups be hi , satisfy hi＞ho. The chuck as described in claim 9, wherein, The first convex portion included in each of the plurality of groups is the convex portion disposed on the outermost peripheral side among the plurality of convex portions disposed on the bottom portion. The chuck as described in claim 9, wherein, The height of the partition wall is equal to or less than the height of the second convex portion included in each of the plurality of groups. The chuck as described in claim 9, wherein, Let the cross-sectional area of the above-mentioned first convex part included in each group of the above-mentioned plurality of groups be So, and set the cross-sectional area of the above-mentioned second convex part included in each group of the above-mentioned plurality of groups to be When Si is Si, Si>So is satisfied. The chuck as described in claim 9, wherein, The arrangement position of the partition wall is closer to the first convex portion included in each of the plurality of groups than the second convex portion included in each of the plurality of groups. The chuck as described in claim 9, wherein, The above-mentioned partition walls are composed of adjacent double-layer partition walls. The chuck as described in claim 14, wherein, The height of the outer partition wall among the above-mentioned double-layered partition walls is lower than the height of the above-mentioned second protrusions included in each of the plurality of groups. A substrate holding device, which has the chuck as described in claim 1 and is used to adsorb and hold the above-mentioned substrate, where the deformation representing the distortion of the above-mentioned substrate is dx, the Young's modulus of the above-mentioned substrate is E, and the above-mentioned When the thickness of the substrate is h, the suction pressure on the substrate is Pv, and u=s/L, the arrangement position of the partition wall satisfies dx<correction coefficient×(h/2)×PvL ³ /4Eh ³ ( 3u ⁴ -4u ³ ). The substrate holding device according to claim 16, wherein dz is the flatness of the substrate, and oh is the dimension of the substrate protruding outward from the first convex portion disposed on the outermost periphery. , the arrangement position of the partition wall satisfies dz<correction coefficient×oh×PvL ³ /4Eh ³ (3u ⁴ −4u ³ ). The substrate holding device as described in claim 16, which is equipped with: A valve for opening and closing a flow path for sucking the inner peripheral side of the partition wall, and A control unit that controls the above-mentioned valves. A substrate processing apparatus, characterized in that, The patterning process is carried out on the above-mentioned substrate held by suction and holding by the substrate holding device as described in Claim 16. A method of manufacturing an article, comprising: A pattern forming process of forming a pattern on a substrate using the substrate processing apparatus as claimed in claim 19, a processing step of processing the substrate on which the pattern is formed in the pattern forming step, and A step of manufacturing an article from the above-mentioned substrate processed in the above-mentioned processing step.

Images