TW202243285A - Manufacturing method of semiconductor device in which connection between a semiconductor chip and a terminal portion of a wiring circuit board is made stable when the semiconductor chip is transferred to the terminal portion - Google Patents

Manufacturing method of semiconductor device in which connection between a semiconductor chip and a terminal portion of a wiring circuit board is made stable when the semiconductor chip is transferred to the terminal portion Download PDF

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TW202243285A
TW202243285A TW111109194A TW111109194A TW202243285A TW 202243285 A TW202243285 A TW 202243285A TW 111109194 A TW111109194 A TW 111109194A TW 111109194 A TW111109194 A TW 111109194A TW 202243285 A TW202243285 A TW 202243285A
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resin layer
semiconductor
semiconductor wafer
semiconductor chip
terminal portion
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TW111109194A
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田中友紀子
宍戶雄一郎
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日商日東電工股份有限公司
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    • H—ELECTRICITY
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68372—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support a device or wafer when forming electrical connections thereto
    • H—ELECTRICITY
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    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Abstract

The present invention provides a manufacturing method of a semiconductor device, in which during fabrication for transferring a semiconductor chip onto a terminal portion of a wiring circuit board that is provided with a wiring portion, connection between the semiconductor chip and the terminal portion is stable. The manufacturing method of the semiconductor device according to the present invention comprises: a transferring step, in which a semiconductor chip 23 is transferred from a temporary holding material 2 on which a plurality of semiconductor chips 23 are arranged to a terminal portion 12 of a mounting substrate 1 including a semiconductor chip fixing resin layer 13 formed on a terminal portion 12 of a wiring circuit board 11 that includes a wiring portion and a terminal portion 12; and a connecting step, in which pressing is applied to a side of the semiconductor chip 23 transferred to the mounting substrate 1 to have the terminal portion 12 electrically connected with the semiconductor chip 12.

Description

半導體裝置之製造方法Manufacturing method of semiconductor device

本發明係關於一種半導體裝置之製造方法。The present invention relates to a manufacturing method of a semiconductor device.

半導體裝置要求高精度且高效率地製造。尤其是，半導體晶片之小型化不斷發展，例如在用於顯示器用途之小型LED(Light Emitting Diode，發光二極體)、μLED等具備微小之半導體晶片的半導體裝置中，其要求更高。然而，小型半導體晶片之操作較為困難，具備此種半導體晶片之半導體裝置之製造中，往往難以高精度且高效率地製造。Semiconductor devices are required to be manufactured with high precision and high efficiency. In particular, the miniaturization of semiconductor chips continues to progress. For example, semiconductor devices with tiny semiconductor chips such as small LEDs (Light Emitting Diodes) and μLEDs used in displays have higher requirements. However, it is difficult to handle small semiconductor chips, and it is often difficult to manufacture semiconductor devices with such semiconductor chips with high precision and high efficiency.

專利文獻1中記載有下述方法：將半導體晶片呈格子狀配置於轉印原基板，將配置有半導體晶片之面朝向下方配置，將用以轉印半導體晶片之轉印基板與轉印原基板之配置有半導體晶片之面對向地設置出間隙而配置，繼而，藉由從轉印原基板對半導體晶片照射雷射光而解除暫時固定使其剝離，並使其掉落於轉印基板上，藉此進行轉印。轉印於轉印基板之半導體晶片可轉印於其他載體基板並安裝於安裝基板。或者，亦可藉由從轉印基板直接轉印於安裝基板而安裝。 [先前技術文獻] [專利文獻] Patent Document 1 describes a method in which a semiconductor wafer is arranged in a grid on an original transfer substrate, the surface on which the semiconductor wafer is arranged faces downward, and the transfer substrate for transferring the semiconductor wafer and the original transfer substrate are separated. The surface on which the semiconductor chip is arranged is placed facing each other with a gap provided, and then the temporary fixation is released by irradiating the semiconductor chip with laser light from the original transfer substrate to peel it off and drop it on the transfer substrate, Transfer printing is performed by this. The semiconductor chip transferred on the transfer substrate can be transferred to another carrier substrate and mounted on the mounting substrate. Alternatively, it can also be mounted by directly transferring from the transfer substrate to the mounting substrate. [Prior Art Literature] [Patent Document]

[專利文獻1]日本專利特開2019-67892號公報[Patent Document 1] Japanese Patent Laid-Open No. 2019-67892

[發明所欲解決之問題][Problem to be solved by the invention]

然而，轉印半導體晶片之先前之方法中，於設置有配線部之配線電路基板的端子部上轉印有半導體晶片時，半導體晶片與端子部之連接有時會不穩定。However, in the conventional method of transferring a semiconductor chip, when the semiconductor chip is transferred on the terminal portion of the printed circuit board provided with the wiring portion, the connection between the semiconductor chip and the terminal portion may become unstable.

本發明係基於此種情況而想出者，其目的在於提供一種製造於設置有配線部之配線電路基板的端子部上轉印有半導體晶片時，半導體晶片與端子部之連接穩定之半導體裝置之方法。 [解決問題之技術手段] The present invention is conceived based on such circumstances, and its object is to provide a semiconductor device in which the connection between the semiconductor chip and the terminal portion is stable when the semiconductor chip is transferred to the terminal portion of the wiring circuit board provided with the wiring portion. method. [Technical means to solve the problem]

本發明人等為了達成上述目的而進行了潛心研究，結果發現，藉由在將半導體晶片從暫時固定材料轉印並移設至形成於配線電路基板之端子部上的半導體晶片固定用樹脂層之後，具備從半導體晶片側進行加壓而使端子部與半導體晶片電性連接之連接步驟，能夠製造半導體晶片與端子部之連接穩定之半導體裝置。本發明係基於該等見解而完成者。The inventors of the present invention conducted intensive studies to achieve the above object, and found that by transferring and transferring the semiconductor wafer from the temporary fixing material to the semiconductor wafer fixing resin layer formed on the terminal portion of the printed circuit board, A connection step of applying pressure from the side of the semiconductor wafer to electrically connect the terminal portion to the semiconductor wafer enables the manufacture of a semiconductor device in which the connection between the semiconductor wafer and the terminal portion is stable. This invention was completed based on these knowledge.

即，本發明提供一種半導體裝置之製造方法，其具備：移設步驟，其係從配置有複數個半導體晶片之暫時固定材料，將上述半導體晶片移設至在具有配線部及端子部之配線電路基板的上述端子部上形成有半導體晶片固定用樹脂層之安裝基板的上述端子部上；以及 連接步驟，其係從移設至上述安裝基板上之上述半導體晶片側進行加壓，使上述端子部與半導體晶片電性連接。 That is, the present invention provides a method of manufacturing a semiconductor device, which includes: a transfer step of transferring the semiconductor chip from a temporary fixing material on which a plurality of semiconductor chips are arranged to a printed circuit board having a wiring part and a terminal part. On the above-mentioned terminal portion of the mounting substrate in which the semiconductor wafer fixing resin layer is formed on the above-mentioned terminal portion; and The connecting step is to apply pressure from the side of the semiconductor chip transferred to the mounting substrate to electrically connect the terminal portion to the semiconductor chip.

如上所述，上述連接步驟中，從移設至安裝基板上之半導體晶片側對安裝基板進行加壓，使端子部與半導體晶片電性連接。加壓前之階段中，半導體晶片位於端子部上之半導體晶片固定用樹脂層上或內部，存在未與端子部連接或者不穩定地連接於上述端子部之情形。因此，藉由加壓，半導體晶片被壓入半導體晶片固定用樹脂層內部，與端子部充分接觸而更加確實地電性連接。藉此，所獲得之半導體裝置中，半導體晶片與端子部之連接穩定。As described above, in the connecting step, the mounting substrate is pressurized from the side of the semiconductor wafer transferred to the mounting substrate to electrically connect the terminal portion to the semiconductor chip. In the stage before pressurization, the semiconductor chip is located on or inside the semiconductor chip fixing resin layer on the terminal portion, and may not be connected to the terminal portion or may be unstablely connected to the terminal portion. Therefore, by applying pressure, the semiconductor chip is pressed into the inside of the resin layer for fixing the semiconductor chip, and comes into sufficient contact with the terminal portion to be electrically connected more reliably. Thereby, in the obtained semiconductor device, the connection between the semiconductor chip and the terminal portion is stabilized.

上述製造方法中，較佳為於上述移設步驟中，藉由從暫時固定材料側對半導體晶片照射能量線，或藉由利用壓抵治具進行壓抵，將半導體晶片移設至形成於上述安裝基板之上述端子部上的上述半導體晶片固定用樹脂層上。藉由此種移設，能夠容易地一次性移動複數個半導體晶片，與藉由拾取器等逐個移設半導體晶片之情形相比，能夠高精度且高效率地移設半導體晶片。In the above-mentioned manufacturing method, it is preferable that in the above-mentioned transferring step, the semiconductor chip is transferred to the above-mentioned mounting substrate by irradiating the semiconductor chip with energy rays from the temporary fixing material side, or by pressing with a pressing jig. On the above-mentioned resin layer for fixing the semiconductor wafer on the above-mentioned terminal portion. Such transfer makes it possible to easily transfer a plurality of semiconductor wafers at one time, and it is possible to transfer semiconductor wafers with high precision and high efficiency compared with the case where semiconductor wafers are transferred one by one by a picker or the like.

上述製造方法亦可於上述移設步驟之後具備樹脂層硬化步驟，該樹脂層硬化步驟係對上述半導體晶片固定用樹脂層照射活性能量線，使上述半導體晶片固定用樹脂層之一部分硬化。藉由具備此種步驟，能夠使半導體晶片固定用樹脂層之一部分硬化而使樹脂層之流動性變低，暫時固定移設至半導體晶片固定用樹脂層上之半導體元件。因此，例如於其後經歷連接步驟之情形時，能夠在半導體晶片之位置不易偏移的情況下以更高之精度藉由加壓使半導體晶片連接於端子部。The manufacturing method may include, after the transfer step, a resin layer hardening step of irradiating the semiconductor wafer fixing resin layer with active energy rays to harden a part of the semiconductor wafer fixing resin layer. By providing such a step, a part of the semiconductor wafer fixing resin layer is hardened to lower the fluidity of the resin layer, and the semiconductor element transferred on the semiconductor wafer fixing resin layer can be temporarily fixed. Therefore, for example, when a connection step is performed thereafter, the semiconductor chip can be connected to the terminal portion by pressurization with higher accuracy without the position of the semiconductor chip being easily shifted.

上述製造方法亦可於上述移設步驟之前具備樹脂層硬化步驟，該樹脂層硬化步驟係對上述半導體晶片固定用樹脂層照射活性能量線，使上述半導體晶片固定用樹脂層之一部分硬化。藉由具備此種步驟，能夠使半導體晶片固定用樹脂層之一部分硬化而調整樹脂層之黏度。藉此，於其後之移設步驟中，從暫時固定材料將半導體晶片移設至半導體晶片固定用樹脂層上時，能夠穩定地移設至該樹脂層上，又，衝擊吸收性優異。因此，於其後之連接步驟中，能夠在半導體晶片之位置不易偏移的情況下以更高之精度藉由加壓使半導體晶片連接於端子部。The above manufacturing method may include a resin layer hardening step of irradiating active energy rays to the semiconductor wafer fixing resin layer to harden a part of the semiconductor wafer fixing resin layer before the transferring step. By providing such a step, it is possible to harden a part of the semiconductor wafer fixing resin layer and adjust the viscosity of the resin layer. Thereby, when the semiconductor wafer is transferred from the temporary fixing material to the semiconductor wafer fixing resin layer in the subsequent transfer step, the semiconductor wafer can be stably transferred to the resin layer, and the impact absorption property is excellent. Therefore, in the subsequent connecting step, it is possible to connect the semiconductor chip to the terminal portion by applying pressure with higher accuracy without the position of the semiconductor chip being easily shifted.

上述半導體晶片固定用樹脂層可於上述安裝基板上之複數個上述端子部上及上述複數個端子部之間連續形成。相對於在複數個端子部上逐個形成上述樹脂層，此種構成係藉由在複數個端子部上一次性形成上述樹脂層而獲得，因此，能夠更高效率地製造半導體裝置。 [發明之效果] The semiconductor wafer fixing resin layer may be continuously formed on the plurality of terminal portions on the mounting substrate and between the plurality of terminal portions. Such a configuration is obtained by forming the above-mentioned resin layer on a plurality of terminal portions at one time, rather than forming the above-mentioned resin layer one by one on a plurality of terminal portions, and therefore, it is possible to more efficiently manufacture a semiconductor device. [Effect of Invention]

根據本發明之半導體裝置之製造方法，能夠製造於設置有配線部之配線電路基板的端子部上轉印有半導體晶片時，半導體晶片與端子部之連接穩定之半導體裝置。According to the method of manufacturing a semiconductor device of the present invention, it is possible to manufacture a semiconductor device in which the connection between the semiconductor chip and the terminal is stable when the semiconductor chip is transferred to the terminal of the printed circuit board provided with the wiring.

[半導體裝置之製造方法] 本發明之半導體裝置之製造方法至少具備：移設步驟，其係從配置有複數個半導體晶片之暫時固定材料，將上述半導體晶片移設至在具有配線部及端子部之配線電路基板的上述端子部上形成有半導體晶片固定用樹脂層之安裝基板的上述端子部上；以及連接步驟，其係從移設至上述安裝基板上之上述半導體晶片側進行加壓，使上述端子部與半導體晶片電性連接。 [Manufacturing method of semiconductor device] The method for manufacturing a semiconductor device according to the present invention includes at least: a transfer step of transferring the semiconductor chip from the temporary fixing material on which a plurality of semiconductor chips are arranged to the terminal portion of the wiring circuit board having a wiring portion and a terminal portion On the terminal portion of the mounting substrate on which the resin layer for fixing the semiconductor chip is formed; and a connecting step of applying pressure from the side of the semiconductor chip transferred to the mounting substrate to electrically connect the terminal portion to the semiconductor chip.

本發明之製造方法亦可具備除了上述移設步驟及上述連接步驟以外之其他步驟。作為上述其他步驟，例如可例舉使上述半導體晶片固定用樹脂層之一部分硬化之步驟(樹脂層硬化步驟)等。The manufacturing method of the present invention may also include other steps in addition to the above-mentioned transfer step and the above-mentioned connection step. As said other process, the process (resin layer hardening process) etc. which harden part of the said resin layer for semiconductor wafer fixation, etc. are mentioned, for example.

以下，使用圖1對本發明之製造方法進行說明。圖1係表示本發明之製造方法之一實施方式之概略圖。Hereinafter, the manufacturing method of this invention is demonstrated using FIG. 1. FIG. Fig. 1 is a schematic diagram showing one embodiment of the production method of the present invention.

上述移設步驟中所使用之配置有複數個半導體晶片之暫時固定材料、以及於具有配線部及端子部之配線電路基板的上述端子部上形成有半導體晶片固定用樹脂層之安裝基板係於移設步驟前分別準備。The temporary fixing material on which a plurality of semiconductor chips are arranged and the mounting board on which a resin layer for fixing semiconductor chips is formed on the terminal portion of a wiring circuit board having a wiring portion and a terminal portion used in the above-mentioned transfer step are used in the transfer step. Prepare separately.

(安裝基板) 將上述安裝基板之一實施方式示於圖1(a)。圖1(a)中所示之安裝基板1具備：具有配線部(未圖示)及端子部12之配線電路基板11、以及形成於配線電路基板11之端子部12上的半導體晶片固定用樹脂層13。端子部12於配線電路基板11上配置複數個，各端子部12中具備配線部。半導體晶片固定用樹脂層13存在於所有端子部12上。 (Mounting board) One embodiment of the above mounting substrate is shown in FIG. 1( a ). The mounting substrate 1 shown in FIG. 1( a ) includes: a printed circuit board 11 having a wiring portion (not shown) and a terminal portion 12 ; and a semiconductor chip fixing resin formed on the terminal portion 12 of the printed circuit board 11 . Layer 13. A plurality of terminal portions 12 are arranged on printed circuit board 11 , and each terminal portion 12 is provided with a wiring portion. The semiconductor wafer fixing resin layer 13 exists on all the terminal portions 12 .

上述半導體晶片固定用樹脂層係從暫時固定基材移設半導體晶片並經過其後之連接步驟所形成之用以固定半導體晶片之樹脂層，或者形成該樹脂之層。上述半導體晶片固定用樹脂層於載置有經移設之半導體晶片時具有與半導體晶片之接著性(暫時固定性)、以及緩和移設時之衝擊的性質(衝擊吸收性)。又，上述半導體晶片固定用樹脂層於所獲得之半導體裝置中具有密封並保護半導體晶片與安裝基板中之端子部之接合部位的作用。The resin layer for fixing the semiconductor wafer is a resin layer for fixing the semiconductor wafer formed by transferring the semiconductor wafer from the temporary fixing base material and going through the subsequent connecting step, or forming the resin layer. The resin layer for fixing a semiconductor wafer has adhesiveness (temporary fixability) to the semiconductor wafer when the semiconductor wafer is placed thereon, and a property (shock absorbing property) for mitigating impact during the transfer. In addition, the above resin layer for fixing a semiconductor chip has a function of sealing and protecting the joint portion between the semiconductor chip and the terminal portion in the mounting substrate in the obtained semiconductor device.

上述半導體晶片固定用樹脂層可於上述安裝基板上之複數個上述端子部上及上述複數個端子部之間連續形成。於此情形時，相對於在複數個端子部上逐個形成上述樹脂層，藉由在複數個端子部上一次性形成上述樹脂層而可獲得上述構造，因此，能夠更高效率地製造半導體裝置。從能夠更高效率地覆蓋複數個端子部之觀點而言，上述半導體晶片固定用樹脂層較佳為片狀之樹脂層(半導體晶片固定用樹脂片材)。上述半導體晶片固定用樹脂片材較佳為覆蓋配置於安裝基板上之所有端子部，更佳為覆蓋包含上述所有端子部之安裝基板整面。圖1(a)中所示之半導體晶片固定用樹脂層13為半導體晶片固定用樹脂片材，其形成於複數個端子部12上，且於該等端子部12之間連續形成。又，形成於配線電路基板11整面，覆蓋安裝基板1整面。The semiconductor wafer fixing resin layer may be continuously formed on the plurality of terminal portions on the mounting substrate and between the plurality of terminal portions. In this case, the above-mentioned structure can be obtained by forming the above-mentioned resin layer on a plurality of terminal portions at one time instead of forming the above-mentioned resin layer on a plurality of terminal portions one by one, so that the semiconductor device can be manufactured more efficiently. It is preferable that the said resin layer for semiconductor wafer fixation is a sheet-shaped resin layer (resin sheet for semiconductor wafer fixation) from a viewpoint of being able to cover several terminal parts more efficiently. The above resin sheet for fixing a semiconductor chip preferably covers all the terminal portions disposed on the mounting substrate, more preferably covers the entire surface of the mounting substrate including all the terminal portions. The resin layer 13 for fixing a semiconductor wafer shown in FIG. Moreover, it is formed on the entire surface of the printed circuit board 11 and covers the entire surface of the mounting substrate 1 .

又，上述半導體晶片固定用樹脂層亦可僅於上述端子部上、或者僅於上述端子部上及上述端子部周邊形成。圖3(a)表示上述安裝基板之另一實施方式。圖3(a)中所示之安裝基板1中，半導體晶片固定用樹脂層13僅於配置於配線電路基板11上之端子部12上形成。Moreover, the said resin layer for fixing a semiconductor wafer may be formed only on the said terminal part, or only on the said terminal part and the periphery of the said terminal part. FIG. 3( a ) shows another embodiment of the above mounting board. In the mounting board 1 shown in FIG. 3( a ), the semiconductor chip fixing resin layer 13 is formed only on the terminal portion 12 arranged on the printed circuit board 11 .

上述半導體晶片固定用樹脂層可為液狀亦可為固體狀。從移設時半導體晶片之接著性及衝擊吸收性優異之觀點而言，液狀之上述半導體晶片固定用樹脂層於25℃下之黏度較佳為0.01～10 Pa・s，更佳為0.05～5 Pa・s。又，若上述黏度為10 Pa・s以下，則能夠使塗佈時之厚度變薄。The above resin layer for fixing a semiconductor wafer may be liquid or solid. From the standpoint of excellent adhesiveness and impact absorption of the semiconductor wafer during transfer, the viscosity of the liquid resin layer for fixing the semiconductor wafer at 25° C. is preferably 0.01 to 10 Pa·s, more preferably 0.05 to 5 Pa.s. Pa.s. Moreover, when the said viscosity is 10 Pa*s or less, the thickness at the time of application|coating can be made thin.

上述半導體晶片固定用樹脂層亦可具有硬化性。尤其是，液狀之上述半導體晶片固定用樹脂層較佳為具有硬化性。作為具有上述硬化性之樹脂層(硬化性樹脂層)，可例舉：熱硬化性樹脂層、活性能量線硬化性樹脂層等。The above resin layer for fixing a semiconductor wafer may have curability. In particular, it is preferable that the liquid resin layer for fixing a semiconductor wafer has curability. As a resin layer (curable resin layer) which has the said curability, a thermosetting resin layer, an active energy ray curable resin layer, etc. are mentioned.

作為上述硬化性樹脂層，可例舉：含有具有硬化性官能基之單體成分或低聚物成分之層、除了該等以外還含有基礎聚合物之層、包含具有硬化性官能基之聚合物作為基礎聚合物之層等。Examples of the curable resin layer include: a layer containing a monomer component or an oligomer component having a curable functional group, a layer containing a base polymer in addition to these, and a polymer containing a curable functional group. As a layer of base polymer, etc.

作為構成上述硬化性樹脂層之樹脂，例如可例舉：丙烯酸系樹脂、胺基甲酸酯丙烯酸酯系樹脂、酚系樹脂、環氧系樹脂、環氧丙烯酸酯系樹脂、聚胺酯系樹脂、三聚氰胺系樹脂、醇酸系樹脂、氧雜環丁烷系樹脂、矽酮樹脂、矽酮丙烯酸系樹脂、聚酯系樹脂等。上述樹脂可僅使用一種，亦可使用兩種以上。Examples of the resin constituting the curable resin layer include acrylic resins, urethane acrylate resins, phenolic resins, epoxy resins, epoxy acrylate resins, polyurethane resins, and melamine resins. resins, alkyd resins, oxetane resins, silicone resins, silicone acrylic resins, polyester resins, etc. The above-mentioned resins may be used alone or in combination of two or more.

上述半導體晶片固定用樹脂層亦可於不損害本發明之效果之範圍內包含除了上述樹脂以及構成樹脂之單體成分或低聚物成分以外之其他成分。作為上述其他成分，例如可例舉：交聯劑、交聯促進劑、硬化觸媒、光酸產生劑、黏著賦予樹脂(松香衍生物、聚萜烯樹脂、石油樹脂、油溶性酚等)、矽烷偶合劑等偶合劑、防老化劑、填充劑(金屬粉、有機填充劑、無機填充劑等)、著色劑(顏料或染料等)、抗氧化劑、塑化劑、軟化劑、界面活性劑、抗靜電劑、表面潤滑劑、調平劑、光穩定劑、紫外線吸收劑、聚合抑制劑、粒狀物、箔狀物等。上述其他成分可分別僅使用一種，亦可使用兩種以上。The resin layer for fixing a semiconductor wafer may contain components other than the above-mentioned resin and monomer components or oligomer components constituting the resin within a range that does not impair the effects of the present invention. Examples of the above-mentioned other components include crosslinking agents, crosslinking accelerators, curing catalysts, photoacid generators, tackifier resins (rosin derivatives, polyterpene resins, petroleum resins, oil-soluble phenols, etc.), Coupling agents such as silane coupling agents, anti-aging agents, fillers (metal powder, organic fillers, inorganic fillers, etc.), colorants (pigments or dyes, etc.), antioxidants, plasticizers, softeners, surfactants, Antistatic agents, surface lubricants, leveling agents, light stabilizers, UV absorbers, polymerization inhibitors, granules, foils, etc. The said other components may use only 1 type, respectively, and may use 2 or more types.

關於具備上述半導體晶片固定用樹脂層之上述安裝基板，其可藉由在具備上述配線部及端子部之配線電路基板的至少上述端子部上塗佈形成上述半導體晶片固定用樹脂之組合物(樹脂組合物)並視需要使其固化而形成。又，於上述半導體晶片固定用樹脂層為固體狀之情形時，可將上述組合物直接塗佈於上述端子部上並使其固化而形成，亦可暫時先於剝離襯墊等暫時基材上形成半導體晶片固定用樹脂層，再將該半導體晶片固定用樹脂層轉印於上述端子部上而形成。關於半導體晶片固定用樹脂層之轉印(貼合)，於半導體晶片固定用樹脂層具有熱硬化性之情形時，可於熱硬化不會進展之溫度，例如溫度30～60℃下進行貼合。Regarding the above-mentioned mounting substrate having the above-mentioned semiconductor chip fixing resin layer, it can be formed by applying the above-mentioned composition of the above-mentioned semiconductor chip fixing resin (resin Composition) and allowed to cure as needed to form. Moreover, when the above-mentioned resin layer for fixing a semiconductor wafer is in a solid state, the above-mentioned composition may be directly coated on the above-mentioned terminal portion and cured, or it may be temporarily formed on a temporary substrate such as a release liner. A resin layer for fixing a semiconductor wafer is formed, and then the resin layer for fixing a semiconductor wafer is transferred onto the terminal portion. Regarding the transfer (bonding) of the semiconductor chip fixing resin layer, when the semiconductor chip fixing resin layer has thermosetting properties, it can be bonded at a temperature at which thermosetting does not progress, for example, at a temperature of 30 to 60°C .

形成上述固體狀之半導體晶片固定用樹脂層的組合物可為任意形態。例如可為乳液型、溶劑型(溶液型)、熱熔融型(熱熔型)等。The composition for forming the solid semiconductor wafer fixing resin layer may be in any form. For example, it may be an emulsion type, a solvent type (solution type), a heat-melt type (hot-melt type), or the like.

作為具備上述端子部及上述配線部之上述安裝基板，可例舉薄膜電晶體(TFT)、印刷配線基板(PCB)等。As the above-mentioned mounting board provided with the above-mentioned terminal portion and the above-mentioned wiring portion, a thin film transistor (TFT), a printed wiring board (PCB), and the like may, for example, be mentioned.

(暫時固定材料) 上述暫時固定材料於一面配置有複數個半導體晶片。上述暫時固定材料例如具備：基材、設置於上述基材之一面的暫時固定層、及暫時固定於上述暫時固定層之複數個半導體晶片。圖2表示上述暫時固定材料之一實施方式。圖2中所示之暫時固定材料2具備：基材21、設置於基材21之一面的暫時固定層22、及配置並暫時固定於暫時固定層22之表面上的複數個半導體晶片23。半導體晶片23於端子部與暫時固定層22接觸側的相反側露出並暫時固定。 (Temporarily fixed material) A plurality of semiconductor wafers are disposed on one side of the temporary fixing material. The temporary fixing material includes, for example, a base material, a temporary fixing layer provided on one surface of the base material, and a plurality of semiconductor wafers temporarily fixed to the temporary fixing layer. FIG. 2 shows one embodiment of the above temporary fixing material. Temporary fixing material 2 shown in FIG. The semiconductor wafer 23 is exposed and temporarily fixed on the side opposite to the side where the terminal part is in contact with the temporary fixing layer 22 .

作為上述暫時固定材料，有圖2中所示之具有暫時固定層之暫時固定材料，作為此種暫時固定材料，可為半導體晶圓經過切割而成之半導體晶片暫時固定於切割保護膠帶而成者，亦可為其後將半導體晶片移設至另一暫時固定材料而成者、或重複進行複數次半導體晶片之移設而成者。再者，上述暫時固定材料並不限定於如圖2所示之構成，例如亦可為藍寶石基板上暫時固定複數個半導體晶片而成者。As the above-mentioned temporary fixing material, there is a temporary fixing material having a temporary fixing layer shown in FIG. , It can also be obtained by transferring the semiconductor chip to another temporary fixing material, or by repeating the transfer of the semiconductor chip several times. Furthermore, the above-mentioned temporary fixing material is not limited to the structure shown in FIG. 2 , for example, it may be formed by temporarily fixing a plurality of semiconductor chips on a sapphire substrate.

上述複數個半導體晶片較佳為配置成矩陣狀(格子狀)，即，於二維方向上規律地配置。關於配置成矩陣狀之上述複數個半導體晶片，可與相鄰之半導體晶片僅於一維方向上設置間隔而配置複數個，可與相鄰之半導體晶片於二維方向上設置間隔而配置複數個，亦可與相鄰之半導體晶片於二維方向上接觸，即不設置間隔而配置。The aforementioned plurality of semiconductor wafers are preferably arranged in a matrix (lattice), that is, arranged regularly in two-dimensional directions. Regarding the plurality of semiconductor wafers arranged in a matrix, a plurality of semiconductor wafers may be arranged at a distance from adjacent semiconductor wafers in a one-dimensional direction, and a plurality of semiconductor wafers may be arranged at a distance from adjacent semiconductor wafers in a two-dimensional direction. , It can also be in contact with adjacent semiconductor wafers in the two-dimensional direction, that is, it can be arranged without spacing.

＜移設步驟＞ 上述移設步驟中，將上述半導體晶片從上述暫時固定材料移設至形成於上述安裝基板之上述端子部上的半導體晶片固定用樹脂層上。關於半導體晶片之移設方法，並無特別限定，首先，以使上述安裝基板之上述半導體晶片固定用樹脂層與上述暫時固定材料之暫時固定有半導體晶片之面對向之方式進行配置。繼而，將半導體晶片從上述暫時固定材料側移設至形成於上述安裝基板之上述端子部上的半導體晶片固定用樹脂層上。較佳為藉由從上述暫時固定材料側對半導體晶片照射雷射等能量線，或藉由利用壓抵治具進行壓抵，將半導體晶片移設至形成於上述安裝基板之上述端子部上的半導體晶片固定用樹脂層上。藉由此種移設，能夠容易地一次性移動複數個半導體晶片，與藉由拾取器等逐個移設半導體晶片之情形相比，能夠高精度且高效率地移設半導體晶片。 ＜Relocation procedure＞ In the transferring step, the semiconductor wafer is transferred from the temporary fixing material onto the semiconductor wafer fixing resin layer formed on the terminal portion of the mounting substrate. The method of transferring the semiconductor chip is not particularly limited. First, the resin layer for fixing the semiconductor chip of the mounting substrate is arranged so that the surface of the temporary fixing material on which the semiconductor chip is temporarily fixed is facing. Next, the semiconductor wafer is transferred from the temporary fixing material side onto the semiconductor wafer fixing resin layer formed on the terminal portion of the mounting substrate. Preferably, the semiconductor wafer is transferred to the semiconductor wafer formed on the terminal portion of the mounting substrate by irradiating the semiconductor wafer with energy rays such as laser light from the side of the temporary fixing material, or by pressing with a pressing jig. The wafer is fixed on the resin layer. Such transfer makes it possible to easily transfer a plurality of semiconductor wafers at one time, and it is possible to transfer semiconductor wafers with high precision and high efficiency compared with the case where semiconductor wafers are transferred one by one by a picker or the like.

具體而言，例如，如圖1(b)所示，以使安裝基板1之半導體晶片固定用樹脂層13與暫時固定材料2之暫時固定有半導體晶片23之面對向之方式相對配置，其後，從暫時固定材料2側照射雷射L。藉此，半導體晶片23之暫時固定部分剝離(雷射剝離)，半導體晶片23掉落並到達半導體晶片固定用樹脂層13上，以此移設至形成於安裝基板1之端子部12上的半導體晶片固定用樹脂層13上。半導體晶片固定用樹脂層13能夠藉由黏著性等暫時固定半導體晶片23，又，半導體晶片23掉落時之衝擊吸收性亦屬優異。關於利用雷射L之照射所進行之半導體晶片23之剝離，可逐個半導體晶片23進行，亦可複數個半導體晶片23同時進行。Specifically, for example, as shown in FIG. 1( b), the resin layer 13 for fixing the semiconductor chip of the mounting substrate 1 and the surface of the temporary fixing material 2 on which the semiconductor chip 23 is temporarily fixed are arranged to face each other. Then, the laser L is irradiated from the temporary fixing material 2 side. Thereby, the temporarily fixed part of the semiconductor wafer 23 is peeled off (laser peeling off), and the semiconductor wafer 23 falls and reaches the semiconductor wafer fixing resin layer 13, thereby being transferred to the semiconductor wafer formed on the terminal portion 12 of the mounting substrate 1. on the resin layer 13 for fixing. The semiconductor wafer fixing resin layer 13 can temporarily fix the semiconductor wafer 23 by adhesiveness etc., and is also excellent in shock absorption when the semiconductor wafer 23 is dropped. The peeling of the semiconductor wafer 23 by irradiation of the laser L may be performed one by one, or may be performed simultaneously for a plurality of semiconductor wafers 23 .

將半導體晶片從上述暫時固定材料側移設至上述半導體晶片固定用樹脂層上時，上述半導體晶片固定用樹脂層可為加溫狀態。於上述半導體晶片固定用樹脂層為固體狀之情形時，藉由使上述半導體晶片固定用樹脂層成為加溫狀態，會使柔軟性及黏性提昇。因此，藉由於加溫狀態下移設半導體晶片，上述半導體晶片固定用樹脂層能夠更進一步減輕半導體晶片之掉落衝擊，能夠抑制半導體晶片由於掉落之反作用而彈飛。再者，於上述半導體晶片固定用樹脂層為液狀之情形時，亦可設為上述加溫狀態。When transferring a semiconductor wafer from the side of the temporary fixing material to the resin layer for semiconductor wafer fixing, the resin layer for semiconductor wafer fixing may be in a heated state. When the said resin layer for semiconductor wafer fixation is a solid state, flexibility and viscosity are improved by bringing the said resin layer for semiconductor wafer fixation into a heated state. Therefore, by transferring the semiconductor wafer in a heated state, the resin layer for fixing the semiconductor wafer can further reduce the drop impact of the semiconductor wafer, and can suppress the bounce of the semiconductor wafer due to the reaction of the drop. In addition, when the said resin layer for fixing a semiconductor wafer is liquid, you may make it into the said heated state.

上述加溫狀態下之溫度例如為60～120℃，較佳為70～110℃。若上述溫度為60℃以上，則半導體晶片固定用樹脂層之柔軟性更容易提昇。若上述溫度為120℃以下，則能夠於半導體晶片固定用樹脂層具有熱硬化性之情形時抑制熱硬化並提昇柔軟性。The temperature in the above heating state is, for example, 60 to 120°C, preferably 70 to 110°C. When the said temperature is 60 degreeC or more, the flexibility of the resin layer for semiconductor wafer fixation will be improved more easily. When the said temperature is 120 degreeC or less, when the resin layer for semiconductor wafer fixing has thermosetting property, thermosetting can be suppressed and flexibility can be improved.

上述加溫狀態可藉由公知或慣用之方法而準備。作為一面設為上述加溫狀態一面進行半導體晶片之移設之方法，例如可例舉：一面將上述安裝基板載置於加熱板上而使半導體晶片固定用樹脂層與安裝基板中之配線電路基板一起被加溫，一面移設半導體晶片之方法；一面對半導體晶片固定用樹脂層吹熱風一面移設半導體晶片之方法；預先對半導體晶片固定用樹脂層進行加溫，移設半導體晶片時不進行加溫而藉由餘熱使半導體晶片固定用樹脂層成為加溫狀態並移設半導體晶片之方法等。The above-mentioned heated state can be prepared by known or customary methods. As a method of transferring the semiconductor chip while setting it in the above-mentioned heated state, for example, the above-mentioned mounting substrate is placed on a heating plate, and the resin layer for fixing the semiconductor chip is made together with the wiring circuit board in the mounting substrate. The method of transferring the semiconductor chip while being heated; the method of transferring the semiconductor chip while blowing hot air on the resin layer for fixing the semiconductor chip; heating the resin layer for fixing the semiconductor chip in advance, and transferring the semiconductor chip without heating A method of transferring a semiconductor chip by bringing the semiconductor chip fixing resin layer into a heated state by residual heat, and the like.

＜連接步驟＞ 上述連接步驟中，於上述複數個半導體晶片移設至上述安裝基板上之狀態下，從上述半導體晶片側進行加壓，使上述端子部與半導體晶片電性連接。加壓前之階段中，半導體晶片位於端子部上之半導體晶片固定用樹脂層上或內部，存在未與端子部連接或者不穩定地連接於上述端子部之情形。因此，藉由加壓，半導體晶片被壓入半導體晶片固定用樹脂層內部，與端子部充分接觸而更加確實地電性連接。藉此，所獲得之半導體裝置中，半導體晶片與端子部之連接穩定。上述加壓時之條件係根據半導體晶片固定用樹脂層之種類或硬度適當進行設定，例如於負荷0.01～5.0 MPa、時間5～300秒下進行加壓。 <Connection procedure> In the connecting step, in a state where the plurality of semiconductor chips are transferred to the mounting substrate, pressure is applied from the side of the semiconductor chip to electrically connect the terminal portion to the semiconductor chip. In the stage before pressurization, the semiconductor chip is located on or inside the semiconductor chip fixing resin layer on the terminal portion, and may not be connected to the terminal portion or may be unstablely connected to the terminal portion. Therefore, by applying pressure, the semiconductor chip is pressed into the inside of the resin layer for fixing the semiconductor chip, and comes into sufficient contact with the terminal portion to be electrically connected more reliably. Thereby, in the obtained semiconductor device, the connection between the semiconductor chip and the terminal portion is stabilized. The conditions for the above pressurization are appropriately set according to the type and hardness of the semiconductor wafer fixing resin layer. For example, pressurization is performed under a load of 0.01 to 5.0 MPa and a time of 5 to 300 seconds.

上述加壓例如以如下方式進行：於加壓板與密封用樹脂層積層之狀態下，以密封用樹脂層成為安裝基板側之方式離開安裝基板而配置，使密封用樹脂層與配置於安裝基板之半導體晶片重合，進行加壓。藉此，密封用樹脂層覆蓋密封半導體晶片。The above pressurization is carried out, for example, by placing the sealing resin layer away from the mounting substrate so that the sealing resin layer is on the mounting substrate side in a state where the pressure plate and the sealing resin layer are laminated, and placing the sealing resin layer on the mounting substrate. The semiconductor wafers are overlapped and pressed. Thereby, the sealing resin layer covers and seals the semiconductor wafer.

於上述半導體晶片固定用樹脂層為硬化性樹脂層之情形時，上述連接步驟中，較佳為與上述加壓同時或於其後使上述半導體晶片固定用樹脂層硬化。於此情形時，半導體晶片固定用樹脂層於硬化前能夠具有某種程度之流動性，藉由加壓能夠使半導體晶片緊緊地連接於端子部。繼而，與加壓同時或於其後使上述半導體晶片固定用樹脂層硬化，藉此，能夠使上述半導體晶片固定用樹脂層充分硬化，能夠將連接於端子部之半導體晶片固定得更緊，使得不易引起位置偏移等。When the resin layer for securing a semiconductor wafer is a curable resin layer, in the connecting step, it is preferable to harden the resin layer for securing a semiconductor wafer simultaneously with the pressurization or thereafter. In this case, the semiconductor chip fixing resin layer can have fluidity to some extent before hardening, and the semiconductor chip can be tightly connected to the terminal portion by pressurization. Then, simultaneously with the pressurization or thereafter, the above-mentioned semiconductor wafer fixing resin layer is hardened, whereby the above-mentioned semiconductor wafer fixing resin layer can be fully hardened, and the semiconductor wafer connected to the terminal portion can be fixed more tightly, so that It is not easy to cause position deviation and the like.

上述連接步驟中使半導體晶片固定用樹脂層硬化之方法係根據硬化性樹脂所具有之硬化性官能基的種類適當進行選擇。於本發明之製造方法具備上述樹脂層硬化步驟之情形時，較佳為與上述樹脂層硬化步驟中之硬化方法不同的方法。於此情形時，易於在上述樹脂層硬化步驟中僅限於使樹脂層之一部分硬化，其後於連接步驟中再使其完全硬化。又，從易於與加壓同時進行之觀點而言，上述連接步驟中使半導體晶片固定用樹脂層硬化之方法較佳為熱硬化。上述熱硬化之條件係根據半導體晶片固定用樹脂層之種類適當進行設定，例如於溫度150～260℃下進行加熱。The method of curing the resin layer for fixing the semiconductor wafer in the above connection step is appropriately selected according to the type of curable functional group that the curable resin has. When the production method of the present invention includes the resin layer curing step, a method different from the curing method in the resin layer curing step is preferred. In this case, it is easy to only partially harden the resin layer in the above resin layer hardening step, and then fully harden it in the connecting step. Furthermore, the method of curing the resin layer for fixing the semiconductor wafer in the above-mentioned connection step is preferably thermosetting from the viewpoint of ease of carrying out simultaneous application of pressure. The above-mentioned thermosetting conditions are appropriately set according to the type of semiconductor wafer fixing resin layer, for example, heating is performed at a temperature of 150 to 260°C.

具體而言，例如，如圖1(b)所示經歷移設步驟後，如圖1(c)所示，對配置有複數個半導體晶片23之安裝基板1，於在加壓板31積層有密封用樹脂層3之狀態下，以使密封用樹脂層3與安裝基板1之配置有半導體晶片23之一側對向之方式進行配置。安裝基板1載置於台座4上。繼而，使密封用樹脂層3與半導體晶片23接觸並重合，於此狀態下從加壓板31側進行加壓。藉此，複數個半導體晶片23同時嵌埋進密封用樹脂層3。此時，同時進行加熱，藉此，密封用樹脂層3硬化成密封樹脂層3a，又，半導體晶片固定用樹脂層13於具有熱硬化性之情形時同時熱硬化成半導體晶片固定用樹脂層13b，能夠更加充分地固定半導體晶片23，使半導體晶片23與端子部12之連接更加牢固(圖1(d))。Specifically, for example, after the transfer step as shown in FIG. 1( b ), as shown in FIG. 1( c ), for the mounting substrate 1 on which a plurality of semiconductor chips 23 are disposed, a sealing layer is laminated on the pressure plate 31. In the state where the resin layer 3 is used, the sealing resin layer 3 is disposed so as to face the side of the mounting substrate 1 on which the semiconductor chip 23 is disposed. The mounting board 1 is placed on the base 4 . Next, the sealing resin layer 3 is brought into contact with the semiconductor wafer 23 to be superimposed, and pressure is applied from the side of the pressure plate 31 in this state. Thereby, a plurality of semiconductor wafers 23 are embedded in the sealing resin layer 3 at the same time. At this time, heating is carried out at the same time, thereby, the sealing resin layer 3 is hardened into the sealing resin layer 3a, and the resin layer 13 for fixing the semiconductor wafer is thermally hardened simultaneously into the resin layer 13b for fixing the semiconductor wafer when it has thermosetting properties. , the semiconductor chip 23 can be fixed more fully, and the connection between the semiconductor chip 23 and the terminal portion 12 can be made more firm ( FIG. 1( d )).

＜樹脂層硬化步驟1＞ 本發明之製造方法亦可於上述移設步驟之前具備上述樹脂層硬化步驟。於上述半導體晶片固定用樹脂層為硬化性樹脂層之情形時，藉由上述樹脂層硬化步驟，能夠使上述半導體晶片固定用樹脂層之一部分硬化。藉由於上述移設步驟之前具備上述樹脂層硬化步驟，能夠使半導體晶片固定用樹脂層之一部分硬化而調整樹脂層之黏度。藉此，於其後之移設步驟中，從暫時固定材料將半導體晶片移設至半導體晶片固定用樹脂層上時，能夠穩定地移設至該樹脂層上，又，衝擊吸收性優異。因此，於其後之連接步驟中，能夠在半導體晶片之位置不易偏移的情況下以更高之精度藉由加壓使半導體晶片連接於端子部。再者，本說明書中，有時將於上述移設步驟之前所具備之上述樹脂層硬化步驟稱作「樹脂層硬化步驟1」。 ＜Resin layer hardening step 1＞ The manufacturing method of the present invention may also include the above-mentioned resin layer hardening step before the above-mentioned transferring step. When the resin layer for fixing a semiconductor wafer is a curable resin layer, a part of the resin layer for fixing a semiconductor wafer can be partially cured by the step of curing the resin layer. By having the resin layer hardening step before the transferring step, part of the semiconductor wafer fixing resin layer can be hardened to adjust the viscosity of the resin layer. Thereby, when the semiconductor wafer is transferred from the temporary fixing material to the semiconductor wafer fixing resin layer in the subsequent transfer step, the semiconductor wafer can be stably transferred to the resin layer, and the impact absorption property is excellent. Therefore, in the subsequent connecting step, it is possible to connect the semiconductor chip to the terminal portion by applying pressure with higher accuracy without the position of the semiconductor chip being easily shifted. In addition, in this specification, the said resin layer hardening process provided before the said transfer process may be called "resin layer hardening process 1."

上述樹脂層硬化步驟1中使半導體晶片固定用樹脂層硬化之方法係根據硬化性樹脂所具有之硬化性官能基的種類適當進行選擇。其中，較佳為利用活性能量線照射所進行之硬化。即，上述樹脂層硬化步驟1中，較佳為對半導體晶片固定用樹脂層照射活性能量線，使半導體晶片固定用樹脂層之一部分硬化。作為上述活性能量線，例如可例舉：電子束、紫外線、α射線、β射線、γ射線、X射線等。其中，較佳為紫外線。The method of curing the semiconductor wafer fixing resin layer in the resin layer curing step 1 is appropriately selected according to the type of curable functional groups contained in the curable resin. Among them, curing by active energy ray irradiation is preferred. That is, in the above resin layer curing step 1, it is preferable to irradiate the semiconductor wafer fixing resin layer with active energy rays to harden a part of the semiconductor wafer fixing resin layer. Examples of the active energy rays include electron beams, ultraviolet rays, α-rays, β-rays, γ-rays, and X-rays. Among them, ultraviolet rays are preferred.

圖3表示具備上述樹脂層硬化步驟1之本發明之製造方法之一實施方式。雖然圖3中所示之實施方式中示出了使用了僅於端子部上形成液狀之半導體晶片固定用樹脂層而成之安裝基板之例，但具備上述樹脂層硬化步驟1之本發明之製造方法並不限定於此種態樣。FIG. 3 shows an embodiment of the manufacturing method of the present invention including the above-mentioned step 1 of hardening the resin layer. Although the embodiment shown in FIG. 3 shows an example of using a mounting substrate formed by forming a liquid semiconductor chip fixing resin layer only on the terminal portion, the present invention having the above-mentioned resin layer hardening step 1 The manufacturing method is not limited to this aspect.

例如，如圖3(b)所示，對經歷移設步驟前之安裝基板1照射活性能量線U，使半導體晶片固定用樹脂層13之一部分硬化而形成半導體晶片固定用樹脂層13a。其後，與圖1中所示之實施方式同樣地，於移設步驟中，藉由雷射照射使半導體晶片23從暫時固定層22剝離，並移設至半導體晶片固定用樹脂層13a上(圖3(c))。此時，半導體晶片固定用樹脂層13a部分硬化，黏度上升，因此衝擊吸收性優異，又，半導體晶片23之位置不易偏移，能夠穩定地移設至該樹脂層13a上。繼而，與圖1中所示之實施方式同樣地，經過連接步驟製造半導體裝置(圖3(d)、(e))。此處，經過上述樹脂層硬化步驟1所形成之半導體晶片固定用樹脂層13a部分硬化而黏度上升，因此，於上述連接步驟中，能夠在半導體晶片23之位置不易偏移的情況下以更高之精度藉由加壓使半導體晶片23連接於端子部12。For example, as shown in FIG. 3( b ), active energy rays U are irradiated to the mounting substrate 1 before the transfer step to harden a part of the semiconductor wafer fixing resin layer 13 to form a semiconductor wafer fixing resin layer 13 a. Thereafter, as in the embodiment shown in FIG. 1, in the transfer step, the semiconductor wafer 23 is peeled off from the temporary fixing layer 22 by laser irradiation, and transferred to the semiconductor wafer fixing resin layer 13a (FIG. 3 (c)). At this time, the resin layer 13a for fixing the semiconductor wafer is partially hardened and its viscosity is increased, so that it has excellent impact absorption properties, and the position of the semiconductor wafer 23 is less likely to shift, and can be stably transferred to the resin layer 13a. Next, similarly to the embodiment shown in FIG. 1 , a semiconductor device is manufactured through a connection step ( FIG. 3( d ), ( e )). Here, the semiconductor wafer fixing resin layer 13a formed through the above-mentioned resin layer hardening step 1 is partially cured to increase its viscosity. Therefore, in the above-mentioned connecting step, the position of the semiconductor chip 23 can be easily shifted at a higher level. The semiconductor chip 23 is connected to the terminal portion 12 by applying pressure with high precision.

＜樹脂層硬化步驟2＞ 本發明之製造方法亦可於上述移設步驟之後具備上述樹脂層硬化步驟。於上述半導體晶片固定用樹脂層為硬化性樹脂層之情形時，藉由上述樹脂層硬化步驟，能夠使上述半導體晶片固定用樹脂層之一部分硬化。藉由於上述移設步驟之後具備上述樹脂層硬化步驟，能夠使半導體晶片固定用樹脂層之一部分硬化而使樹脂層之流動性變低，暫時固定移設至半導體晶片固定用樹脂層上之半導體元件。因此，例如於其後經歷連接步驟之情形時，能夠在半導體晶片之位置不易偏移的情況下以更高之精度藉由加壓使半導體晶片連接於端子部。再者，本說明書中，有時將於上述移設步驟之後所具備之上述樹脂層硬化步驟稱作「樹脂層硬化步驟2」。 ＜Resin layer hardening step 2＞ The manufacturing method of the present invention may also include the above-mentioned resin layer hardening step after the above-mentioned transferring step. When the resin layer for fixing a semiconductor wafer is a curable resin layer, a part of the resin layer for fixing a semiconductor wafer can be partially cured by the step of curing the resin layer. By providing the resin layer hardening step after the transferring step, a part of the semiconductor wafer fixing resin layer can be cured to lower the fluidity of the resin layer, and the semiconductor element transferred on the semiconductor wafer fixing resin layer can be temporarily fixed. Therefore, for example, when a connection step is performed thereafter, the semiconductor chip can be connected to the terminal portion by pressurization with higher accuracy without the position of the semiconductor chip being easily shifted. In addition, in this specification, the said resin layer hardening process provided after the said transfer process may be called "resin layer hardening process 2."

上述樹脂層硬化步驟2中使半導體晶片固定用樹脂層硬化之方法係根據硬化性樹脂所具有之硬化性官能基的種類適當進行選擇。其中，較佳為利用活性能量線照射所進行之硬化。即，上述樹脂層硬化步驟2中，較佳為對半導體晶片固定用樹脂層照射活性能量線，使半導體晶片固定用樹脂層之一部分硬化。作為上述活性能量線，例如可例舉：電子束、紫外線、α射線、β射線、γ射線、X射線等。其中，較佳為紫外線。The method of curing the semiconductor wafer fixing resin layer in the resin layer curing step 2 is appropriately selected according to the type of curable functional groups that the curable resin has. Among them, curing by active energy ray irradiation is preferred. That is, in the resin layer curing step 2, it is preferable to irradiate the semiconductor wafer fixing resin layer with active energy rays to harden a part of the semiconductor wafer fixing resin layer. Examples of the active energy rays include electron beams, ultraviolet rays, α-rays, β-rays, γ-rays, and X-rays. Among them, ultraviolet rays are preferred.

圖4表示具備上述樹脂層硬化步驟2之本發明之製造方法之一實施方式。雖然圖4中所示之實施方式中示出了使用了僅於端子部上形成液狀之半導體晶片固定用樹脂層而成之安裝基板之例，但具備上述樹脂層硬化步驟2之本發明之製造方法並不限定於此種態樣。FIG. 4 shows an embodiment of the manufacturing method of the present invention including the aforementioned resin layer hardening step 2. Although the embodiment shown in FIG. 4 shows an example of using a mounting substrate formed by forming a liquid semiconductor chip fixing resin layer only on the terminal portion, the present invention having the above-mentioned resin layer hardening step 2 The manufacturing method is not limited to this aspect.

首先，與圖1中所示之實施方式同樣地，於移設步驟中，藉由雷射照射使半導體晶片23從暫時固定層22剝離，並移設至半導體晶片固定用樹脂層13上(圖4(b))。其後，對經過移設步驟之安裝基板1照射活性能量線U，使半導體晶片固定用樹脂層13之一部分硬化而形成半導體晶片固定用樹脂層13a(圖4(c))。繼而，與圖1中所示之實施方式同樣地，經過連接步驟製造半導體裝置(圖4(d)、(e))。此處，經過上述樹脂層硬化步驟2，半導體晶片固定用樹脂層13a部分硬化而黏度上升，因此，於上述連接步驟中，能夠在半導體晶片23之位置不易偏移的情況下以更高之精度藉由加壓使半導體晶片23連接於端子部12。First, as in the embodiment shown in FIG. 1 , in the transfer step, the semiconductor wafer 23 is peeled from the temporary fixing layer 22 by laser irradiation, and transferred to the semiconductor wafer fixing resin layer 13 ( FIG. 4 ( b)). Thereafter, active energy rays U are irradiated to the mounting substrate 1 after the transfer step to harden a part of the semiconductor wafer fixing resin layer 13 to form a semiconductor wafer fixing resin layer 13 a ( FIG. 4( c )). Next, similarly to the embodiment shown in FIG. 1 , a semiconductor device is manufactured through a connection step ( FIG. 4( d ), ( e )). Here, through the above-mentioned resin layer hardening step 2, the resin layer 13a for fixing the semiconductor wafer 13a is partially hardened to increase its viscosity. Therefore, in the above-mentioned connecting step, the position of the semiconductor wafer 23 can be easily shifted with higher accuracy. The semiconductor chip 23 is connected to the terminal part 12 by pressurization.

本發明之製造方法可僅具備上述樹脂層硬化步驟1及上述樹脂層硬化步驟2中之一者，亦可具備上述樹脂層硬化步驟1及上述樹脂層硬化步驟2兩者。於具備兩者之情形時，能夠於上述樹脂層硬化步驟1及2中階段性地局部進行硬化。The production method of the present invention may include only one of the above resin layer hardening step 1 and the above resin layer hardening step 2, or may include both the above resin layer hardening step 1 and the above resin layer hardening step 2. In the case where both are provided, it is possible to perform partial hardening step by step in the resin layer hardening steps 1 and 2 above.

[半導體裝置] 作為藉由本發明之製造方法所獲得之半導體裝置，可例舉上述半導體晶片為光半導體元件之光半導體裝置。作為上述光半導體元件，例如可例舉：藍色發光二極體、綠色發光二極體、紅色發光二極體、紫外線發光二極體等發光二極體(LED)。 [semiconductor device] As a semiconductor device obtained by the manufacturing method of this invention, the said semiconductor wafer is an optical semiconductor device which is an optical semiconductor element, for example. As said optical semiconductor element, light emitting diodes (LED), such as a blue light emitting diode, a green light emitting diode, a red light emitting diode, and an ultraviolet light emitting diode, are mentioned, for example.

上述光半導體裝置較佳為液晶畫面之背光源，尤佳為整面直下型之背光源。又，藉由組合上述背光源與顯示面板，能夠製成圖像顯示裝置。上述光半導體裝置為液晶畫面之背光源之情形時之光半導體元件為LED元件。例如，上述背光源中，上述基板上積層有用以向各LED元件發送發光控制信號之金屬配線層。發出紅色(R)、綠色(G)、藍色(B)之各種顏色之光的各LED元件於顯示面板之基板上介隔金屬配線層交替排列。金屬配線層係藉由銅等金屬而形成，其會反射各LED元件之發光，使得圖像之視認性下降。又，RGB之各種顏色之各LED元件所發出之光發生混色，對比度下降。The above-mentioned optical semiconductor device is preferably a backlight for liquid crystal screens, especially a full-surface direct-lit backlight. In addition, an image display device can be produced by combining the above-mentioned backlight with a display panel. When the above-mentioned optical semiconductor device is a backlight of a liquid crystal display, the optical semiconductor element is an LED element. For example, in the above-mentioned backlight, a metal wiring layer for sending a light emission control signal to each LED element is laminated on the above-mentioned substrate. LED elements that emit red (R), green (G), and blue (B) light of various colors are alternately arranged on the substrate of the display panel with metal wiring layers interposed therebetween. The metal wiring layer is formed of metals such as copper, which will reflect the light emitted by each LED element, reducing the visibility of images. In addition, the light emitted by each LED element of each color of RGB is mixed, and the contrast ratio is lowered.

又，上述光半導體裝置較佳為自發光型顯示裝置。又，藉由將上述自發光型顯示裝置視需要與顯示面板組合，能夠製成圖像顯示裝置。上述光半導體裝置為自發光型顯示裝置之情形時之光半導體元件為LED元件。作為上述自發光型顯示裝置，可例舉有機電致發光(有機EL)顯示裝置等。例如，上述自發光型顯示裝置中，上述基板上積層有用以向各LED元件發送發光控制信號之金屬配線層。發出紅色(R)、綠色(G)、藍色(B)之各種顏色之光的各LED元件於基板上介隔金屬配線層交替排列。金屬配線層係藉由銅等金屬而形成，調整各LED元件之發光程度而顯示各種顏色。In addition, the above-mentioned optical semiconductor device is preferably a self-luminous display device. Moreover, an image display device can be produced by combining the above-mentioned self-luminous display device with a display panel as necessary. When the above-mentioned optical semiconductor device is a self-luminous display device, the optical semiconductor element is an LED element. As said self-luminous display device, an organic electroluminescence (organic EL) display device etc. are mentioned, for example. For example, in the above-mentioned self-luminous display device, a metal wiring layer for sending light emission control signals to each LED element is laminated on the above-mentioned substrate. Each LED element emitting red (R), green (G), and blue (B) light of various colors is alternately arranged on the substrate with metal wiring layers interposed therebetween. The metal wiring layer is formed of metals such as copper, and adjusts the light emission level of each LED element to display various colors.

又，作為上述光半導體裝置，可例舉彎折使用之光半導體裝置，例如具有可彎折之圖像顯示裝置(軟性顯示器)(尤其是，可摺疊之圖像顯示裝置(可摺疊顯示器))的光半導體裝置等。具體而言，可例舉可摺疊之背光源及可摺疊之自發光型顯示裝置等。In addition, as the above-mentioned optical semiconductor device, an optical semiconductor device that can be bent and used, such as a bendable image display device (flexible display) (especially, a foldable image display device (foldable display)) can be exemplified. optical semiconductor devices, etc. Specifically, a foldable backlight, a foldable self-luminous display device, and the like may be mentioned.

本發明之製造方法於上述光半導體裝置為小型LED顯示裝置之情形時，及上述光半導體裝置為微LED顯示裝置之情形時，均能較佳地使用。 [實施例] The manufacturing method of the present invention can be preferably used both when the above-mentioned optical semiconductor device is a small LED display device, and when the above-mentioned optical semiconductor device is a micro LED display device. [Example]

以下，舉出實施例對本發明更加詳細地進行說明，但本發明並不受該等實施例任何限定。Hereinafter, although an Example is given and this invention is demonstrated in more detail, this invention is not limited at all by these Examples.

實施例1～3 按表1中所示之調配量混合、攪拌各成分，製作樹脂組合物。再者，表1中所示之各成分如下所示。又，於表1中示出實施例1～3中所獲得之樹脂組合物之性質。 Examples 1-3 Each component was mixed and stirred according to the compounding quantity shown in Table 1, and the resin composition was prepared. In addition, each component shown in Table 1 is as follows. Moreover, the property of the resin composition obtained in Examples 1-3 is shown in Table 1.

＜環氧化合物＞ 環氧化合物A：商品名「Celloxide 2021P」，Daicel股份有限公司製造，脂環式環氧化合物 環氧化合物B：商品名「H022」，Tosoh Finechem股份有限公司製造，氟化 環氧化合物C：商品名「YX8040」，Mitsubishi Chemical股份有限公司製造，氫化雙酚A型環氧化合物 環氧化合物D：商品名「YL6810」，Mitsubishi Chemical股份有限公司製造，雙酚A型環氧化合物 環氧化合物E：商品名「EG-200」，Osaka Gas Chemical股份有限公司製造，茀型環氧化合物 環氧化合物F：商品名「OPP-G」，三光股份有限公司製造，聯苯型環氧化合物 ＜氧雜環丁烷化合物＞ 氧雜環丁烷化合物A：商品名「OXT-221」，東亞合成股份有限公司製造 氧雜環丁烷化合物B：商品名「ETERNACOLL EHO」，宇部興產股份有限公司製造 ＜光酸產生劑＞ 光酸產生劑A：商品名「SP-170」，ADEKA股份有限公司製造 光酸產生劑B：商品名「CPI-200K」，San-Apro股份有限公司製造 ＜其他＞ 矽烷偶合劑：商品名「KBM-403」，信越化學工業股份有限公司製造 ＜Epoxy compound＞ Epoxy compound A: trade name "Celloxide 2021P", manufactured by Daicel Co., Ltd., alicyclic epoxy compound Epoxy compound B: trade name "H022", manufactured by Tosoh Finechem Co., Ltd., fluorinated Epoxy compound C: trade name "YX8040", manufactured by Mitsubishi Chemical Co., Ltd., hydrogenated bisphenol A type epoxy compound Epoxy compound D: trade name "YL6810", manufactured by Mitsubishi Chemical Co., Ltd., bisphenol A type epoxy compound Epoxy compound E: trade name "EG-200", manufactured by Osaka Gas Chemical Co., Ltd., fennel-type epoxy compound Epoxy compound F: trade name "OPP-G", manufactured by Sanko Co., Ltd., biphenyl type epoxy compound ＜Oxetane compounds＞ Oxetane compound A: Trade name "OXT-221", manufactured by Toagosei Co., Ltd. Oxetane compound B: Trade name "ETERNACOLL EHO", manufactured by Ube Industries, Ltd. ＜Photoacid generator＞ Photoacid generator A: trade name "SP-170", manufactured by ADEKA Co., Ltd. Photoacid generator B: trade name "CPI-200K", manufactured by San-Apro Co., Ltd. ＜Other＞ Silane coupling agent: trade name "KBM-403", manufactured by Shin-Etsu Chemical Co., Ltd.

藉由噴墨法於具備配線部及端子部之配線電路基板的各端子部上塗佈上述樹脂組合物，形成半導體晶片固定用樹脂層。繼而，於500～8000 mJ/cm 2之條件下，按照各組合物之光硬化特性對上述半導體晶片固定用樹脂層適當照射紫外線而使半導體晶片固定用樹脂層之一部分硬化。如此，製作具備半導體晶片固定用樹脂層之安裝基板。 The above-mentioned resin composition was applied to each terminal portion of a printed circuit board having a wiring portion and a terminal portion by an inkjet method to form a semiconductor chip fixing resin layer. Next, under the condition of 500 to 8000 mJ/cm 2 , according to the photocuring characteristics of each composition, the resin layer for fixing a semiconductor wafer is suitably irradiated with ultraviolet rays to harden a part of the resin layer for fixing a semiconductor wafer. In this manner, a mounting substrate provided with a resin layer for fixing a semiconductor wafer was produced.

繼而，使具備複數個半導體晶片之暫時固定材料之具備半導體晶片之面與上述安裝基板之具備端子部之面對向配置，從暫時固定材料側對半導體晶片照射雷射而使半導體晶片從暫時固定材料依序剝離，並掉落在形成於端子部上之半導體晶片固定用樹脂層上。再者，作為上述雷射，組合使用YAG(Yttrium-Aluminum-Garnet，釔鋁石榴石)雷射(波長：1064 nm)以及三次諧波(波長355 nm)或四次諧波(波長266 nm)。如此，將暫時固定材料具備之所有半導體晶片移設至半導體晶片固定用樹脂層上。Then, the surface provided with the semiconductor chip of the temporary fixing material provided with a plurality of semiconductor chips and the surface provided with the terminal part of the above-mentioned mounting substrate are arranged facing each other, and the semiconductor chip is irradiated with laser light from the side of the temporary fixing material to temporarily fix the semiconductor chip. The materials are sequentially peeled off and dropped on the semiconductor chip fixing resin layer formed on the terminal portion. Furthermore, as the above-mentioned laser, YAG (Yttrium-Aluminum-Garnet, yttrium aluminum garnet) laser (wavelength: 1064 nm) and third harmonic (wavelength 355 nm) or fourth harmonic (wavelength 266 nm) are used in combination . In this way, all the semiconductor wafers provided with the temporary fixing material are transferred onto the semiconductor wafer fixing resin layer.

繼而，將半導體晶片移設至之安裝基板載置於台座上，以使具備半導體晶片之面與具備聚四氟乙烯層作為密封用樹脂層之加壓板的密封用樹脂層面對向之方式配置加壓板。繼而，以使半導體晶片嵌埋進密封用樹脂層之方式，於負荷0.1 MPa、溫度200℃下從加壓板側進行10～30秒之加壓及加熱，使半導體晶片之端子部與安裝基板之端子部充分接觸。同時，使密封用樹脂層及半導體晶片固定用樹脂層硬化，密封半導體晶片。如此，製作半導體裝置。Next, the mounting substrate to which the semiconductor chip was transferred was placed on the stand so that the surface including the semiconductor chip faced the sealing resin layer of the pressure plate having the polytetrafluoroethylene layer as the sealing resin layer. Pressure plate. Then, pressurize and heat from the pressure plate side for 10 to 30 seconds under a load of 0.1 MPa and a temperature of 200°C in such a way that the semiconductor chip is embedded in the sealing resin layer, so that the terminal portion of the semiconductor chip and the mounting substrate The terminals are in full contact. Simultaneously, the sealing resin layer and the semiconductor wafer fixing resin layer are cured to seal the semiconductor wafer. In this way, a semiconductor device is produced.

[表1] (表1)    實施例1 實施例2 實施例3 環氧化合物 環氧化合物A 45 30 - 環氧化合物B 45 - - 環氧化合物C - 28 - 環氧化合物D - 17 - 環氧化合物E - - 50 環氧化合物F - - 45 氧雜環丁烷化合物 氧雜環丁烷化合物A - 25 - 氧雜環丁烷化合物B 10 - 5 光酸產生劑 光酸產生劑A - 1 1.00 光酸產生劑B 2 - - 矽烷偶合劑 1 1 - 黏度[Pa・s] 0.06 2.0 4.1 [Table 1] (Table 1) Example 1 Example 2 Example 3 epoxy compound epoxy compound A 45 30 - Epoxy compound B 45 - - Epoxy compound C - 28 - Epoxy compound D - 17 - Epoxy compound E - - 50 Epoxy compound F - - 45 Oxetane compounds Oxetane compound A - 25 - Oxetane compound B 10 - 5 photoacid generator Photoacid Generator A - 1 1.00 Photoacid Generator B 2 - - Silane coupling agent 1 1 - Viscosity [Pa・s] 0.06 2.0 4.1

實施例4 將丙烯酸系樹脂(商品名「Teisan Resin SG-70L」，Nagase chemteX股份有限公司製造)15.0質量份、環氧系樹脂(商品名「EPICLON N-665-EXP-S」，DIC股份有限公司製造)8.8質量份、環氧系樹脂(商品名「YL980」，Mitsubishi Chemical股份有限公司製造)31.6質量份、酚系樹脂(商品名「MEHC-7851SS」，明和化成股份有限公司製造)44.6質量份、及硬化觸媒(商品名「TPP-K」，北興化學工業股份有限公司製造)0.5質量份混合進甲基乙基酮10質量份中並進行攪拌而製作樹脂組合物。將上述樹脂組合物以最終厚度成為10 μm之方式塗佈於聚對苯二甲酸乙二酯(PET)系剝離襯墊(商品名「MRF38」，Mitsubishi Chemical股份有限公司製造)之離型處理面上，形成塗佈層。繼而，於120℃下對上述塗佈層進行2分鐘之加熱而脫溶劑。如此，於剝離襯墊上形成片狀之半導體晶片固定用樹脂層(樹脂片材)。 Example 4 Acrylic resin (trade name "Teisan Resin SG-70L", manufactured by Nagase ChemteX Co., Ltd.) 15.0 parts by mass, epoxy resin (trade name "EPICLON N-665-EXP-S", manufactured by DIC Co., Ltd.) 8.8 parts by mass, 31.6 parts by mass of epoxy resin (trade name "YL980", manufactured by Mitsubishi Chemical Co., Ltd.), 44.6 parts by mass of phenolic resin (trade name "MEHC-7851SS", manufactured by Meiwa Chemical Co., Ltd.), and 0.5 parts by mass of a curing catalyst (trade name "TPP-K", manufactured by Hokshin Chemical Co., Ltd.) was mixed with 10 parts by mass of methyl ethyl ketone and stirred to prepare a resin composition. The above resin composition was applied to the release surface of a polyethylene terephthalate (PET) release liner (trade name "MRF38", manufactured by Mitsubishi Chemical Co., Ltd.) so that the final thickness was 10 μm. On, a coating layer is formed. Next, the above-mentioned coating layer was heated at 120° C. for 2 minutes to remove the solvent. In this way, a sheet-like resin layer (resin sheet) for fixing a semiconductor wafer is formed on the release liner.

繼而，將上述樹脂片材於溫度40℃下以速度10/mm貼合於具備配線部及端子部之配線電路基板之具備端子部之面之整面，其後，將剝離襯墊剝離。如此，製作具備半導體晶片固定用樹脂層之安裝基板。Next, the above-mentioned resin sheet was bonded to the entire surface of the terminal portion-equipped surface of the printed circuit board having the wiring portion and the terminal portion at a temperature of 40° C. at a speed of 10/mm, and then the release liner was peeled off. In this manner, a mounting substrate provided with a resin layer for fixing a semiconductor wafer was produced.

繼而，將半導體晶片移設至之安裝基板載置於台座上，以使具備半導體晶片之面與具備聚四氟乙烯層作為密封用樹脂層之加壓板的密封用樹脂層面對向之方式配置加壓板。繼而，以使半導體晶片嵌埋進密封用樹脂層之方式，於負荷0.1 MPa、溫度200℃下從加壓板側進行10～30秒之加壓及加熱，使半導體晶片之端子部與安裝基板之端子部充分接觸。同時，使密封用樹脂層及半導體晶片固定用樹脂層硬化，密封半導體晶片。如此，製作半導體裝置。Next, the mounting substrate to which the semiconductor chip was transferred was placed on the stand so that the surface including the semiconductor chip faced the sealing resin layer of the pressure plate having the polytetrafluoroethylene layer as the sealing resin layer. Pressure plate. Then, pressurize and heat from the pressure plate side for 10 to 30 seconds under a load of 0.1 MPa and a temperature of 200°C in such a way that the semiconductor chip is embedded in the sealing resin layer, so that the terminal portion of the semiconductor chip and the mounting substrate The terminals are in full contact. Simultaneously, the sealing resin layer and the semiconductor wafer fixing resin layer are cured to seal the semiconductor wafer. In this way, a semiconductor device is fabricated.

1:安裝基板 2:暫時固定材料 3:密封用樹脂層 3a:密封樹脂層 4:台座 11:配線電路基板 12:端子部 13:半導體晶片固定用樹脂層 13a:半導體晶片固定用樹脂層 13b:半導體晶片固定用樹脂層 21:基材 22:暫時固定層 23:半導體晶片 31:加壓板 L:雷射 U:活性能量線 1: Install the substrate 2: temporarily fix the material 3: Resin layer for sealing 3a: sealing resin layer 4: Pedestal 11: Wiring circuit board 12: Terminal part 13: Resin layer for semiconductor wafer fixation 13a: Resin layer for semiconductor wafer fixation 13b: Resin layer for semiconductor wafer fixation 21: Substrate 22: Temporary fixed layer 23: Semiconductor wafer 31: Pressure plate L: Laser U: active energy line

圖1(a)～(d)係表示本發明之製造方法之一實施方式之概略圖。 圖2係表示暫時固定材料之一實施方式之剖視概略圖。 圖3(a)～(e)係表示本發明之製造方法之另一實施方式之概略圖。 圖4(a)～(e)係表示本發明之製造方法之又一實施方式之概略圖。 1( a ) to ( d ) are schematic diagrams showing one embodiment of the production method of the present invention. Fig. 2 is a schematic sectional view showing an embodiment of a temporary fixing material. 3( a ) to ( e ) are schematic diagrams showing another embodiment of the production method of the present invention. 4( a ) to ( e ) are schematic diagrams showing still another embodiment of the production method of the present invention.

1:安裝基板 1: Install the substrate

2:暫時固定材料 2: temporarily fix the material

3:密封用樹脂層 3: Resin layer for sealing

3a:密封樹脂層 3a: sealing resin layer

4:台座 4: Pedestal

11:配線電路基板 11: Wiring circuit board

12:端子部 12: Terminal part

13:半導體晶片固定用樹脂層 13: Resin layer for semiconductor wafer fixation

13b:半導體晶片固定用樹脂層 13b: Resin layer for semiconductor wafer fixation

21:基材 21: Substrate

22:暫時固定層 22: Temporary fixed layer

23:半導體晶片 23: Semiconductor wafer

31:加壓板 31: Pressure plate

L:雷射 L: Laser

Claims (5)

一種半導體裝置之製造方法，其具備：移設步驟，其係從配置有複數個半導體晶片之暫時固定材料，將上述半導體晶片移設至在具有配線部及端子部之配線電路基板的上述端子部上形成有半導體晶片固定用樹脂層之安裝基板的上述端子部上；以及 連接步驟，其係從移設至上述安裝基板上之上述半導體晶片側進行加壓，使上述端子部與半導體晶片電性連接。 A method of manufacturing a semiconductor device, comprising: a transfer step of transferring the semiconductor chip from a temporary fixing material on which a plurality of semiconductor chips are arranged to the terminal portion of a wiring circuit board having a wiring portion and a terminal portion. On the above-mentioned terminal portion of the mounting substrate having the semiconductor chip fixing resin layer; and The connection step is to apply pressure from the side of the semiconductor chip transferred to the mounting substrate to electrically connect the terminal portion to the semiconductor chip. 如請求項1之半導體裝置之製造方法，其中於上述移設步驟中，藉由從暫時固定材料側對上述半導體晶片照射能量線，或藉由利用壓抵治具進行壓抵，將上述半導體晶片移設至形成於上述安裝基板之上述端子部上的上述半導體晶片固定用樹脂層上。The method for manufacturing a semiconductor device according to claim 1, wherein in the transferring step, the semiconductor wafer is transferred by irradiating energy rays from the temporary fixing material side to the semiconductor wafer, or by pressing with a pressing jig on the resin layer for fixing the semiconductor wafer formed on the terminal portion of the mounting substrate. 如請求項1或2之半導體裝置之製造方法，其於上述移設步驟之後具備樹脂層硬化步驟，該樹脂層硬化步驟係對上述半導體晶片固定用樹脂層照射活性能量線，使上述半導體晶片固定用樹脂層之一部分硬化。The method of manufacturing a semiconductor device according to Claim 1 or 2, which includes a resin layer hardening step after the above-mentioned transfer step, and the resin layer hardening step is to irradiate the above-mentioned semiconductor wafer fixing resin layer with active energy rays to make the above-mentioned semiconductor wafer fixing resin layer Part of the resin layer is hardened. 如請求項1或2之半導體裝置之製造方法，其於上述移設步驟之前具備樹脂層硬化步驟，該樹脂層硬化步驟係對上述半導體晶片固定用樹脂層照射活性能量線，使上述半導體晶片固定用樹脂層之一部分硬化。The method for manufacturing a semiconductor device according to Claim 1 or 2, which includes a resin layer hardening step before the above-mentioned transfer step, and the resin layer hardening step is to irradiate the above-mentioned semiconductor wafer fixing resin layer with active energy rays to make the above-mentioned semiconductor wafer fixing. Part of the resin layer is hardened. 如請求項1或2之半導體裝置之製造方法，其中上述半導體晶片固定用樹脂層於上述安裝基板上之複數個上述端子部上及上述複數個端子部之間連續形成。The method of manufacturing a semiconductor device according to claim 1 or 2, wherein the semiconductor chip fixing resin layer is continuously formed on and between the plurality of terminal portions on the mounting substrate.
TW111109194A 2021-03-17 2022-03-14 Manufacturing method of semiconductor device in which connection between a semiconductor chip and a terminal portion of a wiring circuit board is made stable when the semiconductor chip is transferred to the terminal portion TW202243285A (en)

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