TW202242977A - Chip interval forming method which can finely form a specified interval between chips - Google Patents

Chip interval forming method which can finely form a specified interval between chips Download PDF

Info

Publication number
TW202242977A
TW202242977A TW111114874A TW111114874A TW202242977A TW 202242977 A TW202242977 A TW 202242977A TW 111114874 A TW111114874 A TW 111114874A TW 111114874 A TW111114874 A TW 111114874A TW 202242977 A TW202242977 A TW 202242977A
Authority
TW
Taiwan
Prior art keywords
wafer
expansion
sheet
holding
expansion sheet
Prior art date
Application number
TW111114874A
Other languages
Chinese (zh)
Inventor
服部篤
Original Assignee
日商迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW202242977A publication Critical patent/TW202242977A/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

This invention provides a method for forming a chip interval, which can finely form a specified interval between chips. In the chip interval forming step, air is ejected from a holding surface of a holding table provided below the expansion sheet, thereby reducing friction between the expansion sheet and the holding surface. Therefore, the expansion sheet can be easily expanded, and a predetermined interval can be well formed between the chips.

Description

晶片間隔形成方法Wafer Spacer Formation Method

本發明係關於一種將擴張片進行擴張，而在構成被加工物之多個晶片之間形成預定的間隔之晶片間隔形成方法。The present invention relates to a method for forming a wafer space by expanding an expansion sheet to form a predetermined space between a plurality of wafers constituting a workpiece.

已有一種程序，其將沿著分割預定線在內部形成有斷裂起點之晶圓、或已沿著分割預定線分割成多個晶片之晶圓黏貼於擴張片，並將擴張片進行擴張，藉此增加晶片間隔。There is a procedure in which a wafer having a fracture starting point formed inside along a planned dividing line, or a wafer divided into a plurality of wafers along a planned dividing line is pasted on an expansion sheet, and the expansion sheet is expanded, by This increases the wafer spacing.

並且，已有一種程序，其將上述的晶圓黏貼於擴張片，所述擴張片層積有被稱作晶粒附接膜（die attach film）之黏著片，並將擴張片進行擴張，藉此增加晶圓的晶片間隔，且將晶粒附接膜因應晶片進行分割。In addition, there is a procedure of attaching the above-mentioned wafer to an expansion sheet on which an adhesive sheet called a die attach film is laminated, and expanding the expansion sheet, by This increases the die spacing of the wafer and separates the die attach film per die.

片擴張裝置具有：框架固定部、吸引保持台、以及配置於吸引保持台的外周之擴張鼓輪。藉由使擴張鼓輪在垂直方向上升，而將擴張片進行擴張，並擴張晶片間隔。之後，為了維持經擴張之晶片間隔，而藉由吸引保持台吸引保持擴張片。 [習知技術文獻] [專利文獻] The sheet expansion device has a frame fixing part, a suction holding table, and an expansion drum arranged on the outer periphery of the suction holding table. By raising the expansion drum in the vertical direction, the expansion sheet is expanded, and the interval between wafers is expanded. After that, in order to maintain the expanded wafer interval, the expanded sheet is sucked and held by the sucking and holding table. [Prior art literature] [Patent Document]

[專利文獻1]日本特許第6741529號公報 [專利文獻2]日本特開2007-123658號公報 [Patent Document 1] Japanese Patent No. 6741529 [Patent Document 2] Japanese Patent Laid-Open No. 2007-123658

[發明所欲解決的課題] 但是，上述的片擴張裝置中，在擴張鼓輪上升時，擴張鼓輪與吸引保持台配置於幾乎同一平面。因此，因在擴張片中對應晶片之中央區域與吸引保持台的保持面之間會產生摩擦，故難以將擴張片的中央區域充分地進行擴張。 [Problems to be Solved by the Invention] However, in the above-mentioned sheet expanding device, when the expanding drum is raised, the expanding drum and the suction holding table are disposed on substantially the same plane. Therefore, since friction occurs between the central area of the expansion sheet corresponding to the wafer and the holding surface of the suction holding table, it is difficult to sufficiently expand the central area of the expansion sheet.

因此，本發明之目的在於提供一種在晶片間良好地形成預定的間隔之晶片間隔形成方法。Therefore, an object of the present invention is to provide a method for forming a wafer gap that satisfactorily forms a predetermined gap between wafers.

[解決課題的技術手段] 根據本發明，提供一種晶片間隔形成方法，其在構成被加工物之多個晶片間形成預定的間隔，所述被加工物透過擴張片而支撐於環狀框架的開口，所述晶片間隔形成方法具備：晶片間隔形成步驟，其在藉由從設置於該擴張片的下方之保持台的保持面噴出空氣而降低該擴張片與該保持面的摩擦之狀態下，將該擴張片進行擴張，而在該晶片間形成預定的間隔；以及收縮步驟，其在實施該晶片間隔形成步驟之後，在藉由該保持台的該保持面而吸引保持該擴張片的對應該晶片之區域且維持該晶片彼此的間隔之狀態下，藉由將該環狀框架的內周緣與被加工物的外周緣之間的該擴張片的部分進行加熱，而使此部分收縮。 [Technical means to solve the problem] According to the present invention, there is provided a wafer gap forming method for forming a predetermined gap between a plurality of wafers constituting a workpiece supported by an opening of a ring frame through an expansion sheet, the wafer gap forming method A wafer gap forming step is provided for expanding the expansion sheet in a state where friction between the expansion sheet and the holding surface is reduced by blowing air from a holding surface of a holding table provided below the expansion sheet, and forming a predetermined interval between the wafers; and a shrinking step of, after performing the wafer interval forming step, attracting and holding the area of the expansion sheet corresponding to the wafer by the holding surface of the holding table and maintaining the wafers from each other In the state of the interval, the portion of the expansion sheet between the inner peripheral edge of the ring frame and the outer peripheral edge of the workpiece is heated to shrink this portion.

[發明功效] 本發明的晶片間隔形成方法中，在晶片間隔形成步驟中，藉由從設置於擴張片的下方之保持台的保持面噴出空氣，而降低擴張片與保持面的摩擦。因此，因能容易地將擴張片的對應晶片之區域進行擴張，故可在晶片間良好地形成預定的間隔。 [Efficacy of the invention] In the wafer space forming method of the present invention, in the wafer space forming step, the friction between the expansion sheet and the holding surface is reduced by blowing air from the holding surface of the holding table provided below the expansion sheet. Therefore, since the area corresponding to the wafer of the expansion sheet can be easily expanded, a predetermined interval can be favorably formed between the wafers.

本發明實施方式之晶片間隔方法中，作為被加工物，使用如圖1所示般之晶圓100。晶圓100具有圓形狀，且在正面形成有網格狀的分割預定線103。在藉由分割預定線103所劃分之各區域形成有元件101。In the wafer spacing method according to the embodiment of the present invention, a wafer 100 as shown in FIG. 1 is used as a workpiece. The wafer 100 has a circular shape, and grid-like planned dividing lines 103 are formed on the front surface. The element 101 is formed in each region divided by the dividing line 103 .

在本實施方式中，晶圓100係在框架單元110的狀態下被處理。框架單元110係藉由以擴張片113使環狀框架111與晶圓100一體化而形成，所述環狀框架111具有能容納晶圓100的開口112，所述晶圓100定位於環狀框架111的開口112。如此，在本實施方式中，晶圓100透過擴張片113而支撐於環狀框架111的開口112。In this embodiment, the wafer 100 is processed in the state of the frame unit 110 . The frame unit 110 is formed by integrating an annular frame 111 with an opening 112 capable of accommodating a wafer 100 with an expansion piece 113, and the wafer 100 is positioned on the annular frame. 111 of the opening 112 . Thus, in this embodiment, the wafer 100 is supported by the opening 112 of the ring frame 111 through the expansion piece 113 .

接著，針對本實施方式之晶片間隔方法的各步驟進行說明。此晶片間隔形成方法係用於在構成晶圓100之多個晶片間形成預定的間隔之方法。Next, each step of the wafer spacing method of this embodiment will be described. This wafer spacing forming method is a method for forming a predetermined spacing between a plurality of wafers constituting the wafer 100 .

[改質層形成步驟] 在此步驟中，如圖2所示，使用雷射照射器200，沿著晶圓100的分割預定線103照射雷射光線201。藉此，在晶圓100的內部，沿著分割預定線103形成成為斷裂起點之弱強度的改質層202。其結果，藉由改質層202而將晶圓100劃分成分別包含一個元件101之多個晶片120。 [Modified layer formation step] In this step, as shown in FIG. 2 , laser irradiator 200 is used to irradiate laser light 201 along planned dividing line 103 of wafer 100 . Thereby, in the wafer 100 , the modified layer 202 of weak strength serving as a fracture starting point is formed along the line to be divided 103 . As a result, the wafer 100 is divided into a plurality of wafers 120 each including one device 101 by the modified layer 202 .

[晶片間隔形成步驟] 在此步驟中，藉由擴張框架單元110的擴張片113，而在晶片100的晶片120間形成預定的間隔。 [Wafer Spacer Formation Step] In this step, a predetermined interval is formed between the wafers 120 of the wafer 100 by expanding the expansion sheet 113 of the frame unit 110 .

在此步驟中，使用圖3及圖4所示之片擴張裝置4。如圖3所示，此片擴張步驟4具備有矩形狀的基台40。在此基台40的上表面配設有保持框架單元110的環狀框架111之框架保持部5。In this step, the sheet expansion device 4 shown in FIGS. 3 and 4 is used. As shown in FIG. 3 , this sheet expanding step 4 includes a rectangular base 40 . The frame holding part 5 holding the ring frame 111 of the frame unit 110 is arrange|positioned on the upper surface of the base 40 here.

此框架保持構件5具有：筒狀基座51，其配設於基台40的上表面；以及作為框架固定部之四個夾具52，其等配設於此筒狀基座51的上端部外周。筒狀基座51的上表面發揮作為用於載置框架單元110的環狀框架111之載置面511的功能。載置於載置面511上之環狀框架111係藉由夾具52而固定於筒狀基座51。如此進行，框架保持構件5可保持包含環狀框架111及晶圓100之框架單元110。This frame holding member 5 has: a cylindrical base 51 arranged on the upper surface of the base 40; . The upper surface of the cylindrical base 51 functions as a mounting surface 511 on which the annular frame 111 of the frame unit 110 is mounted. The annular frame 111 placed on the mounting surface 511 is fixed to the cylindrical base 51 by the clamp 52 . In this way, the frame holding member 5 can hold the frame unit 110 including the ring frame 111 and the wafer 100 .

在框架保持構件5的筒狀基座51內，配設有將裝設於環狀框架111之擴張片113進行擴張之片擴張機構6。此片擴張機構6具備：保持台62，其保持晶圓100；擴張鼓輪61，其以從下方將保持台62進行保持之方式配置；以及移動構件63，其使擴張鼓輪61及保持台62沿著Z軸方向移動。In the cylindrical base 51 of the frame holding member 5, a sheet expansion mechanism 6 for expanding the expansion sheet 113 attached to the annular frame 111 is arranged. This sheet expansion mechanism 6 is equipped with: a holding table 62, which holds the wafer 100; an expansion drum 61, which is arranged to hold the holding table 62 from below; and a moving member 63, which makes the expansion drum 61 and the holding table 62 moves along the Z-axis direction.

保持台62將保持於框架保持構件5之保持框架單元110的晶圓100進行保持。保持台62具有圓板狀的本體621及配置於本體621上之保持面（吸附卡盤）622。如圖4所示，保持面622以覆蓋設於本體621之本體通氣路徑623之方式配設於本體621的上表面。The holding table 62 holds the wafer 100 held by the holding frame unit 110 of the frame holding member 5 . The holding table 62 has a disk-shaped body 621 and a holding surface (suction chuck) 622 arranged on the body 621 . As shown in FIG. 4 , the holding surface 622 is arranged on the upper surface of the main body 621 so as to cover the main body air passage 623 provided on the main body 621 .

保持面622具有通氣性，藉由連通圖4所示之吸引源637而將擴張片113中之貼附有晶圓100之區域亦即晶圓貼附區域131（參閱圖1）進行吸引保持。亦即，保持台62可藉由保持面622而透過擴張片113將晶圓100進行吸引保持。並且，保持面622被構成為藉由連通圖4所示之空氣源638而噴出預定量（例如微量）的空氣。The holding surface 622 is air-permeable, and by connecting with the suction source 637 shown in FIG. 4 , the area where the wafer 100 is attached in the expansion sheet 113 , that is, the wafer attaching area 131 (refer to FIG. 1 ), is sucked and held. That is, the holding table 62 can suck and hold the wafer 100 through the expansion piece 113 through the holding surface 622 . Furthermore, the holding surface 622 is configured to eject a predetermined amount (for example, a small amount) of air by communicating with the air source 638 shown in FIG. 4 .

具有如此構成之保持台62被支撐於擴張鼓輪61。如圖3所示，擴張鼓輪61具有：被形成為環狀之周壁611、及覆蓋周壁611的下表面之圓形狀的底壁612。在底壁612的中央設有貫通底壁612之穴614。並且，在周壁611的上端配設有多個擴張輔助輥613。如圖4所示，擴張輔助輥613的上表面配置於與保持台62的保持面622大致同一高度。The holding table 62 having such a configuration is supported by the expansion drum 61 . As shown in FIG. 3 , the expansion drum 61 has an annular peripheral wall 611 and a circular bottom wall 612 covering the lower surface of the peripheral wall 611 . A hole 614 penetrating through the bottom wall 612 is provided at the center of the bottom wall 612 . In addition, a plurality of expansion auxiliary rollers 613 are arranged on the upper end of the peripheral wall 611 . As shown in FIG. 4 , the upper surface of the expansion auxiliary roller 613 is arranged at substantially the same height as the holding surface 622 of the holding table 62 .

保持台62的本體621係藉由擴張鼓輪61的周壁611而大致無間隙地覆蓋周圍，且被支撐於擴張鼓輪61的底壁612上。The main body 621 of the holding table 62 is covered by the peripheral wall 611 of the expansion drum 61 without gaps, and is supported on the bottom wall 612 of the expansion drum 61 .

擴張鼓輪61被支撐於移動構件63。移動構件63係由氣缸機構所構成，並具有：活塞基台630；活塞桿631，其被設置成相對於活塞基台630能在Z軸方向移動；以及圓形狀的支撐基台632，其設於活塞桿631的上端。支撐基台632從下方支撐擴張鼓輪61的底壁612。The expansion drum 61 is supported by the moving member 63 . The moving member 63 is composed of a cylinder mechanism, and has: a piston base 630; a piston rod 631 configured to move in the Z-axis direction relative to the piston base 630; and a circular support base 632 provided with on the upper end of the piston rod 631. The support base 632 supports the bottom wall 612 of the expansion drum 61 from below.

因此，移動構件63中，藉由將活塞桿631在Z軸方向移動，而變得能使擴張鼓輪61及保持台62在Z軸方向移動。Therefore, in the moving member 63 , by moving the piston rod 631 in the Z-axis direction, it becomes possible to move the expansion drum 61 and the holding table 62 in the Z-axis direction.

在支撐基台632的中心設有連接管635。連接管635貫通擴張鼓輪61的底壁612的穴614（參閱圖3）及保持台62的本體621的中央。如此，保持台62與擴張鼓輪61在藉由同一連接管635而貫通中央之狀態下，被移動構件63的支撐基台632支撐。A connection pipe 635 is provided at the center of the support base 632 . The connecting pipe 635 passes through the hole 614 (see FIG. 3 ) of the bottom wall 612 of the expansion drum 61 and the center of the main body 621 of the holding platform 62 . In this way, the holding table 62 and the expansion drum 61 are supported by the support base 632 of the moving member 63 in a state where the center is penetrated by the same connecting pipe 635 .

並且，如圖4所示，在連接管635及活塞桿631設有空氣通路636。此空氣通路636的一端係透過連接管635及保持台62的本體通氣路徑623而連接於保持台62的保持面622。並且，空氣通路636的另一端係透過活塞桿631及切換閥639而連接於空氣源638及吸引源637。Furthermore, as shown in FIG. 4 , an air passage 636 is provided in the connecting pipe 635 and the piston rod 631 . One end of the air passage 636 is connected to the holding surface 622 of the holding table 62 through the connecting pipe 635 and the body air passage 623 of the holding table 62 . In addition, the other end of the air passage 636 is connected to the air source 638 and the suction source 637 through the piston rod 631 and the switching valve 639 .

亦即，保持台62的保持面622係透過此空氣通路636而能連通吸引源637或空氣源638。That is, the holding surface 622 of the holding table 62 can communicate with the suction source 637 or the air source 638 through the air passage 636 .

並且，如圖3所示，片擴張裝置4具備：加熱構件8，其用於將保持於框架保持構件5之框架單元110的擴張片113進行加熱。Furthermore, as shown in FIG. 3 , the sheet expanding device 4 includes a heating member 8 for heating the expanding sheet 113 held by the frame unit 110 of the frame holding member 5 .

加熱構件8具有：紅外線加熱器81；支撐桿82，其支撐紅外線加熱器81；以及轉動構件83，其轉動支撐桿82。紅外線加熱器81被形成為與擴張片113中之收縮區域132（參閱圖1）大致對應大小的環狀。此收縮區域132係擴張片113中之晶圓貼附區域131與環狀框架111之間的區域，亦即，環狀框架111的內周緣與晶圓100的外周緣之間的擴張片113的部分。The heating member 8 has: an infrared heater 81 ; a support rod 82 that supports the infrared heater 81 ; and a rotation member 83 that rotates the support rod 82 . The infrared heater 81 is formed in an annular shape approximately corresponding in size to the contracted area 132 (see FIG. 1 ) in the expansion sheet 113 . This contraction area 132 is the area between the wafer attachment area 131 and the ring frame 111 in the expansion sheet 113, that is, the expansion sheet 113 between the inner periphery of the ring frame 111 and the outer periphery of the wafer 100. part.

轉動構件83使紅外線加熱器81在撤離位置（圖3所示之位置）與加熱位置之間轉動。加熱位置係框架保持構件5所保持之框架單元110的擴張片113中之收縮區域132的上方的位置。The rotating member 83 rotates the infrared heater 81 between the evacuation position (the position shown in FIG. 3 ) and the heating position. The heating position is a position above the contracted area 132 in the expansion sheet 113 of the frame unit 110 held by the frame holding member 5 .

並且，片擴張裝置4具備控制部17。控制部17藉由控制片擴張裝置4的各構件的動作，而實施晶片間隔形成步驟。Furthermore, the sheet expanding device 4 includes a control unit 17 . The control unit 17 executes the wafer gap forming step by controlling the operation of each member of the sheet expansion device 4 .

以下，針對使用此種片擴張裝置4之晶片間隔形成步驟進行說明。Hereinafter, the process of forming the gap between wafers using such a sheet expanding apparatus 4 will be described.

在此步驟中，如圖5所示，例如操作者將框架單元110的環狀框架111載置於框架保持構件5中之筒狀基座51的載置面511上，並藉由夾具52固定於筒狀基座51（框架保持步驟）。In this step, as shown in FIG. 5 , for example, the operator places the annular frame 111 of the frame unit 110 on the mounting surface 511 of the cylindrical base 51 in the frame holding member 5 and fixes it with the clamp 52 on the cylindrical base 51 (frame holding step).

此時，控制部17控制移動構件63，先使活塞桿631移動至下方側，藉此如圖5所示，將保持台62的保持面622及擴張鼓輪61的擴張輔助輥613配置於比框架單元110的擴張片113更下方。At this time, the control unit 17 controls the moving member 63 to first move the piston rod 631 to the lower side, thereby, as shown in FIG. The expansion piece 113 of the frame unit 110 is further below.

再者，控制部17控制切換閥639，使保持台62的保持面622透過空氣通路636而連通空氣源638。藉此，如圖5中使用箭頭301所示，從設置於擴張片113的下方之保持台62的保持面622噴出空氣。Furthermore, the control unit 17 controls the switching valve 639 so that the holding surface 622 of the holding table 62 communicates with the air source 638 through the air passage 636 . Thereby, as shown by arrow 301 in FIG. 5 , air is ejected from the holding surface 622 of the holding table 62 provided below the expansion sheet 113 .

接著，控制部17在已從保持面622噴出空氣之狀態下，控制移動構件63，如圖6中藉由箭頭401所示，使活塞桿631移動至上方側。藉此，如圖6所示，控制部17以擴張鼓輪61的擴張輔助輥613及保持台62的保持面622位於比筒狀基座51的載置面511更上方之方式，使擴張鼓輪61及保持台62上升至預定的擴張位置為止。Next, the control unit 17 controls the moving member 63 in a state where the air is ejected from the holding surface 622, and moves the piston rod 631 upward as shown by an arrow 401 in FIG. 6 . Thereby, as shown in FIG. 6 , the control unit 17 causes the expansion drum to be positioned so that the expansion auxiliary roller 613 of the expansion drum 61 and the holding surface 622 of the holding table 62 are located above the mounting surface 511 of the cylindrical base 51 . The wheels 61 and the holding table 62 are raised to a predetermined expansion position.

藉此，擴張鼓輪61的擴張輔助輥613會抵接擴張片113，而將擴張片113往上推起。藉此，擴張片被擴張（片擴張步驟）。其結果，拉伸力會放射狀地作用在貼附於擴張片113之晶圓100。藉由如此拉伸力放射狀地作用在晶圓100，晶圓100會沿著沿分割預定線103所形成之改質層202而斷裂並被分離成一個個晶片120，且在相鄰之晶片120之間形成預定的間隔。Accordingly, the expansion auxiliary roller 613 of the expansion drum 61 abuts against the expansion sheet 113 to push the expansion sheet 113 upward. Thereby, the expansion sheet is expanded (sheet expansion step). As a result, tensile force acts radially on the wafer 100 attached to the expansion sheet 113 . By radially acting on the wafer 100 with such a tensile force, the wafer 100 will be broken along the modified layer 202 formed along the planned dividing line 103 and separated into individual wafers 120, and the adjacent wafers 120 to form a predetermined interval.

此外，在此片擴張步驟中，與擴張輔助輥613的上表面大致相同高度地配置之保持台62的保持面622亦接觸擴張片133。關於此點，本實施方式中，藉由從保持面622噴出空氣，而降低擴張片113與保持面622的摩擦。因此，因可一邊抑制與保持面622的摩擦的影響一邊容易地將擴張片進行擴張，故在晶片120間可良好地形成預定的間隔。In addition, in this sheet expanding step, the holding surface 622 of the holding table 62 arranged at substantially the same height as the upper surface of the expanding auxiliary roller 613 also contacts the expanding sheet 133 . In this regard, in this embodiment, the friction between the expansion sheet 113 and the holding surface 622 is reduced by blowing air from the holding surface 622 . Therefore, since the expansion sheet can be easily expanded while suppressing the influence of friction with the holding surface 622 , a predetermined interval can be favorably formed between the wafers 120 .

並且，控制部17可藉由控制擴張鼓輪61及保持台62往上方的移動量，而調整擴張片113的擴張量（伸長量）。而且，控制部17可藉由調整擴張片113的擴張量，而將形成於一個個晶片120間之間隔設為預定的間隔。In addition, the control unit 17 can adjust the expansion amount (elongation amount) of the expansion sheet 113 by controlling the upward movement amount of the expansion drum 61 and the holding table 62 . Furthermore, the control unit 17 can set the interval formed between each wafer 120 to a predetermined interval by adjusting the expansion amount of the expansion sheet 113 .

[收縮步驟] 此步驟中，控制部17係在一個個晶片120間已形成預定的間隔之狀態下，控制切換閥639，而使保持台62的保持面622連通吸引源637。藉此，如圖7中使用箭頭302所示，控制部17藉由保持面622而將擴張片113的對應晶片120之區域（晶圓貼附區域131；參閱圖1）吸引保持，並維持晶片120間的間隔（片吸引保持步驟）。 [shrink step] In this step, the control unit 17 controls the switching valve 639 so that the holding surface 622 of the holding table 62 communicates with the suction source 637 in a state where a predetermined interval is formed between the individual wafers 120 . Thereby, as shown by the arrow 302 in FIG. 7 , the control unit 17 attracts and holds the area of the expansion sheet 113 corresponding to the wafer 120 (the wafer attachment area 131 ; see FIG. 1 ) through the holding surface 622, and holds the wafer. 120 intervals (piece suction hold steps).

此狀態下，控制部17控制移動構件63，如圖8中藉由箭頭402所示，使活塞桿631移動至下方側。藉此，控制部17以保持面622及擴張輔助輥613的上表面成為與筒狀基座51的載置面511大致相同高度之方式，使擴張鼓輪61及保持台62下降至預定的撤離位置（撤離步驟）。In this state, the control unit 17 controls the moving member 63 to move the piston rod 631 to the downward side as shown by the arrow 402 in FIG. 8 . Thereby, the control unit 17 lowers the expansion drum 61 and the holding table 62 to a predetermined distance so that the holding surface 622 and the upper surface of the expansion auxiliary roller 613 are substantially at the same height as the mounting surface 511 of the cylindrical base 51 . location (evacuation steps).

藉此，擴張鼓輪61的擴張輔助輥613從擴張片113離開。其結果，擴張片113中之晶圓貼附區域131與環狀框架111之間的區域（亦即，在晶圓100的外周側經拉伸之部分）亦即收縮區域132產生鬆弛。Thereby, the expansion auxiliary roller 613 of the expansion drum 61 is separated from the expansion sheet 113 . As a result, a region between the wafer attaching region 131 and the ring frame 111 in the expansion sheet 113 (that is, a stretched portion on the outer peripheral side of the wafer 100 ), that is, the contracted region 132 slacks.

接著，如圖9所示，控制部17將加熱構件8（參閱圖3）的紅外線加熱器81定位於擴張片113中之收縮區域132的上方亦即加熱位置，並將紅外線加熱器81設為開啟（ON）。藉此，擴張片113中之收縮區域132被藉由紅外線加熱器81所照射之紅外線加熱，並如圖10所示進行收縮（片收縮步驟）。 如此，在收縮步驟中，藉由加熱而使晶圓100的外周側經拉伸之收縮區域132收縮。 Next, as shown in FIG. 9 , the control unit 17 positions the infrared heater 81 of the heating member 8 (refer to FIG. 3 ) at the heating position above the shrinkage region 132 in the expansion sheet 113, and sets the infrared heater 81 to open (ON). Thereby, the shrinkage area 132 in the expansion sheet 113 is heated by infrared rays irradiated by the infrared heater 81, and shrinks as shown in FIG. 10 (sheet shrinkage step). Thus, in the shrinking step, the stretched shrinking region 132 on the outer peripheral side of the wafer 100 is shrunk by heating.

之後，控制部17控制切換閥639，解除保持台62的保持面622與吸引源637的連通。然後，例如操作者從框架保持構件5取出框架單元110，而結束處理。Thereafter, the control unit 17 controls the switching valve 639 to cancel communication between the holding surface 622 of the holding table 62 and the suction source 637 . Then, for example, the operator takes out the frame unit 110 from the frame holding member 5, and the process ends.

如以上，在本實施方式中，在晶片間隔形成步驟中，藉由從設置於擴張片113的下方之保持台62的保持面622噴出空氣，而降低擴張片113與保持面622的摩擦。因此，因能容易地將擴張片133的晶圓貼附區域131進行擴張，故可在晶片120間良好地形成預定的間隔。As described above, in the present embodiment, the friction between the expansion sheet 113 and the holding surface 622 is reduced by blowing air from the holding surface 622 of the holding table 62 provided below the expansion sheet 113 in the wafer gap forming step. Therefore, since the wafer attaching region 131 of the expansion sheet 133 can be easily expanded, a predetermined interval can be favorably formed between the wafers 120 .

並且，在收縮步驟中，藉由使擴張片113中之收縮區域132收縮，而在維持晶片間隔形成步驟中形成於晶片120間之間隔之狀態下，擴張片113回到不鬆弛而緊繃之狀態。因此，例如在將框架單元110搬送至未圖示的拾取裝置之際，可抑制由晶片120彼此接觸所導致之損傷。And, in the shrinking step, by shrinking the shrinking region 132 in the expanding sheet 113, the expanding sheet 113 returns to a tight state without slack while maintaining the gap formed between the wafers 120 in the wafer gap forming step. state. Therefore, for example, when the frame unit 110 is transported to a pick-up device not shown, it is possible to suppress damage caused by the contact between the wafers 120 .

並且，在本實施方式中，加熱構件8具有紅外線加熱器81。關於此點，加熱構件8亦可具有對收縮區域132噴吹熱風之構件以代替紅外線加熱器81。Furthermore, in the present embodiment, the heating means 8 has an infrared heater 81 . In this regard, instead of the infrared heater 81 , the heating means 8 may have a means for blowing hot air to the shrinkage area 132 .

並且，本實施方式中，如圖2所示，藉由在晶片間隔形成步驟之前實施改質層形成步驟，而在晶圓100形成有改質層202。然後，在晶片間隔形成步驟中，以改質層202為起點，將晶圓100分割成多個晶片120。關於此點，本實施方式中，亦可實施以下的分割步驟以代替改質層形成步驟。Furthermore, in the present embodiment, as shown in FIG. 2 , the modified layer 202 is formed on the wafer 100 by performing the modified layer forming step before the wafer spacer forming step. Then, in the wafer spacer forming step, the wafer 100 is divided into a plurality of wafers 120 starting from the modified layer 202 . In this regard, in the present embodiment, the following dividing step may be performed instead of the modified layer forming step.

[分割步驟] 在此步驟中，如圖11所示，使用切割刀片210，沿著晶圓100的分割預定線103而形成分割槽212。其結果，晶圓100藉由分割槽212而被分割成分別包含一個元件101之多個晶片120。 [Split step] In this step, as shown in FIG. 11 , a dicing blade 210 is used to form a dividing groove 212 along the planned dividing line 103 of the wafer 100 . As a result, the wafer 100 is divided into a plurality of chips 120 each including one device 101 by the dividing trench 212 .

此情形，在實施晶片間隔形成步驟前，晶圓100已被分割成多個晶片120。因此，在晶片間隔形成步驟中，晶圓100中之晶片120的間隔會被擴大至預定的間隔。In this case, the wafer 100 has been divided into a plurality of wafers 120 before performing the wafer spacer forming step. Therefore, in the wafer spacing forming step, the spacing of the wafers 120 in the wafer 100 is enlarged to a predetermined spacing.

在此情形中，在晶片間隔形成步驟中，亦藉由從保持台62的保持面622噴出空氣而降低擴張片113與保持面622的摩擦。因此，因能容易地將擴張片113的晶圓貼附區域131進行擴張，故可在晶片120間良好地形成預定的間隔。In this case, also in the wafer gap forming step, the friction between the expansion sheet 113 and the holding surface 622 is reduced by blowing air from the holding surface 622 of the holding table 62 . Therefore, since the wafer attaching region 131 of the expansion sheet 113 can be easily expanded, a predetermined interval can be favorably formed between the wafers 120 .

此外，分割步驟中，亦可使用圖2所示之雷射照射器200，藉由雷射光而形成分割槽212。In addition, in the dividing step, the laser irradiator 200 shown in FIG. 2 may also be used to form the dividing groove 212 by laser light.

4:片擴張裝置 17:控制部 5:框架保持構件 40:基台 51:筒狀基座 52:夾具 511:載置面 6:片擴張機構 61:擴張鼓輪 611:周壁 612:底壁 613:擴張輔助輥 614:孔 62:保持台 621:本體 622:保持面 623:本體通氣路徑 63:移動構件 630:活塞基台 631:活塞桿 632:支撐基台 635:連接管 636:空氣通路 637:吸引源 638:空氣源 639:切換閥 8:加熱構件 81:紅外線加熱器 82:支撐桿 83:轉動構件 200:雷射照射器 201:雷射光線 210:切割刀片 100:晶圓 101:元件 103:分割預定線 110:框架單元 111:環狀框架 112:開口 113:擴張片 120:晶片 131:晶圓貼附區域 132:收縮區域 202:改質層 212:分割槽 4: Sheet expansion device 17: Control Department 5: Frame holding member 40: Abutment 51: Cylindrical base 52: Fixture 511: loading surface 6: Sheet expansion mechanism 61: expansion drum 611: Zhoubi 612: bottom wall 613: Expansion auxiliary roller 614: hole 62: Holding table 621: Ontology 622: keep surface 623:Body ventilation path 63: Mobile components 630: Piston Abutment 631: piston rod 632:Support Abutment 635: connecting pipe 636: air passage 637: source of attraction 638: Air source 639: switching valve 8: Heating components 81:Infrared heater 82: support rod 83: Rotating member 200: Laser irradiator 201:Laser light 210: cutting blade 100: Wafer 101: Components 103: Split schedule line 110: frame unit 111: ring frame 112: opening 113: Expansion film 120: chip 131: Wafer attach area 132:Shrink area 202: modified layer 212: split groove

圖1係包含晶圓之框架單元的立體圖。 圖2係表示改質層形成步驟之剖面圖。 圖3係片擴張裝置的分解立體圖。 圖4係片擴張裝置的剖面圖。 圖5係表示晶片間隔形成步驟的框架保持步驟之剖面圖。 圖6係表示晶片間隔形成步驟的片擴張步驟之剖面圖。 圖7係表示收縮步驟的片吸引保持步驟之剖面圖。 圖8係表示收縮步驟的撤離步驟之剖面圖。 圖9係表示收縮步驟的片收縮步驟之剖面圖。 圖10係表示收縮步驟的片收縮步驟之剖面圖。 圖11係表示改質層形成步驟的另一例之剖面圖。 FIG. 1 is a perspective view of a frame unit including a wafer. Fig. 2 is a cross-sectional view showing a step of forming a modified layer. Figure 3 is an exploded perspective view of the tie expansion device. Figure 4 is a cross-sectional view of the tie expansion device. Fig. 5 is a cross-sectional view showing a frame holding step in a wafer spacer forming step. Fig. 6 is a cross-sectional view showing a sheet expanding step in the wafer spacer forming step. Fig. 7 is a cross-sectional view showing the sheet suction and holding step in the shrinking step. Fig. 8 is a cross-sectional view showing the evacuation step of the shrinking step. Fig. 9 is a sectional view showing a sheet shrinking step of the shrinking step. Fig. 10 is a sectional view showing a sheet shrinking step of the shrinking step. Fig. 11 is a cross-sectional view showing another example of the step of forming the modified layer.

5:框架保持構件 5: Frame holding member

51:筒狀基座 51: Cylindrical base

52:夾具 52: Fixture

511:載置面 511: loading surface

61:擴張鼓輪 61: expansion drum

611:周壁 611: Zhoubi

612:底壁 612: bottom wall

613:擴張輔助輥 613: Expansion auxiliary roller

62:保持台 62: Holding table

621:本體 621: Ontology

622:保持面 622: keep surface

623:本體通氣路徑 623:Body ventilation path

63:移動構件 63: Mobile components

630:活塞基台 630: Piston Abutment

631:活塞桿 631: piston rod

632:支撐基台 632:Support Abutment

635:連接管 635: connecting pipe

636:空氣通路 636: air passage

637:吸引源 637: source of attraction

638:空氣源 638: Air source

639:切換閥 639: switching valve

100:晶圓 100: Wafer

110:框架單元 110: frame unit

111:環狀框架 111: ring frame

113:擴張片 113: Expansion film

120:晶片 120: chip

301:箭頭 301: Arrow

401:箭頭 401: arrow

Claims (1)

一種晶片間隔形成方法，其在構成被加工物之多個晶片間形成預定的間隔，該被加工物透過擴張片而支撐於環狀框架的開口，該晶片間隔形成方法的特徵在於具備： 晶片間隔形成步驟，其在藉由從設置於該擴張片的下方之保持台的保持面噴出空氣而降低該擴張片與該保持面的摩擦之狀態下，將該擴張片進行擴張，而在該晶片間形成預定的間隔；以及 收縮步驟，其在實施該晶片間隔形成步驟之後，在藉由該保持台的該保持面而吸引保持該擴張片的對應該晶片之區域且維持該晶片彼此的間隔之狀態下，藉由將該環狀框架的內周緣與被加工物的外周緣之間的該擴張片的部分進行加熱，而使此部分收縮。 A method for forming a wafer gap, which forms a predetermined gap between a plurality of wafers constituting a workpiece, and the workpiece is supported by an opening of a ring frame through an expansion sheet, and the method for forming a wafer gap is characterized by comprising: Wafer gap forming step of expanding the expansion sheet in a state where the friction between the expansion sheet and the holding surface is reduced by blowing air from the holding surface of the holding table provided below the expansion sheet, and a predetermined interval is formed between the wafers; and shrinking step, after implementing the wafer gap forming step, in a state where the area corresponding to the wafer of the expansion sheet is sucked and held by the holding surface of the holding table and the gap between the wafers is maintained, by A portion of the expanded sheet between the inner peripheral edge of the ring frame and the outer peripheral edge of the workpiece is heated to shrink this portion.
TW111114874A 2021-04-22 2022-04-19 Chip interval forming method which can finely form a specified interval between chips TW202242977A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-072523 2021-04-22
JP2021072523A JP2022167030A (en) 2021-04-22 2021-04-22 Chip spacing formation method

Publications (1)

Publication Number Publication Date
TW202242977A true TW202242977A (en) 2022-11-01

Family

ID=83667817

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111114874A TW202242977A (en) 2021-04-22 2022-04-19 Chip interval forming method which can finely form a specified interval between chips

Country Status (4)

Country Link
JP (1) JP2022167030A (en)
KR (1) KR20220145761A (en)
CN (1) CN115241053A (en)
TW (1) TW202242977A (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007123658A (en) 2005-10-31 2007-05-17 Disco Abrasive Syst Ltd Expansion apparatus of adhesive tape
JP6741529B2 (en) 2016-09-09 2020-08-19 株式会社ディスコ Tip spacing maintenance method

Also Published As

Publication number Publication date
CN115241053A (en) 2022-10-25
KR20220145761A (en) 2022-10-31
JP2022167030A (en) 2022-11-04

Similar Documents

Publication Publication Date Title
TWI657727B (en) Wafer interval maintaining device
JP5409280B2 (en) Tip interval expansion method
TWI762627B (en) Extension method and extension device
JP6320198B2 (en) Tape expansion unit
US20160155656A1 (en) Semiconductor-element manufacturing method and wafer mounting device
KR102249339B1 (en) Apparatus for maintaining spaces between chips and method for maintaining spaces between chips
US10559487B2 (en) Wafer dividing method and dividing apparatus
KR20190039000A (en) Tape expansion apparatus and tape expansion method
KR102606114B1 (en) Wafer dividing method and wafer dividing apparatus
JP2018085434A (en) Method for processing wafer
KR20190074961A (en) Dividing apparatus
CN110164810B (en) Dividing apparatus and dividing method
TW202242977A (en) Chip interval forming method which can finely form a specified interval between chips
JP2010147316A (en) Method and apparatus for expanding tape
JP2002353296A (en) Equipment for peeling wafer protective tape and wafer mounting equipment
JP3222036U (en) UV irradiation device
TWI819486B (en) expansion device
TW202030832A (en) Expander capable of cooling an expandable sheet with a simpler structure
JP2023047339A (en) Wafer chuck for laser beam wafer dicing device
JP2007053277A (en) Expander for air-blown-up type film sheet
KR20240021304A (en) Expand device and expand method
KR20240021246A (en) expand device