TW202237784A - Film for forming protective film, sheet for forming protective film, composite sheet for forming protective film, and method for manufacturing device capable of suppressing peeling between a protective film and a chip caused by flux cleaning - Google Patents

Film for forming protective film, sheet for forming protective film, composite sheet for forming protective film, and method for manufacturing device capable of suppressing peeling between a protective film and a chip caused by flux cleaning Download PDF

Info

Publication number
TW202237784A
TW202237784A TW111109569A TW111109569A TW202237784A TW 202237784 A TW202237784 A TW 202237784A TW 111109569 A TW111109569 A TW 111109569A TW 111109569 A TW111109569 A TW 111109569A TW 202237784 A TW202237784 A TW 202237784A
Authority
TW
Taiwan
Prior art keywords
protective film
film
forming
wafer
aminoethanol
Prior art date
Application number
TW111109569A
Other languages
Chinese (zh)
Inventor
佐藤壮起
田中佑耶
Original Assignee
日商琳得科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商琳得科股份有限公司 filed Critical 日商琳得科股份有限公司
Publication of TW202237784A publication Critical patent/TW202237784A/en

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/04Coating
    • C08J7/0427Coating with only one layer of a composition containing a polymer binder
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18Manufacture of films or sheets
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D133/00Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
    • C09D133/04Homopolymers or copolymers of esters
    • C09D133/06Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09D133/062Copolymers with monomers not covered by C09D133/06
    • C09D133/066Copolymers with monomers not covered by C09D133/06 containing -OH groups
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/20Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes for coatings strippable as coherent films, e.g. temporary coatings strippable as coherent films
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40Additives
    • C09D7/60Additives non-macromolecular
    • C09D7/61Additives non-macromolecular inorganic
    • C09D7/62Additives non-macromolecular inorganic modified by treatment with other compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40Additives
    • C09D7/70Additives characterised by shape, e.g. fibres, flakes or microspheres
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/10Adhesives in the form of films or foils without carriers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561Batch processing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • H01L23/295Organic, e.g. plastic containing a filler
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • H01L23/3171Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/544Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2367/00Characterised by the use of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Derivatives of such polymers
    • C08J2367/02Polyesters derived from dicarboxylic acids and dihydroxy compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2433/00Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers
    • C08J2433/04Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters
    • C08J2433/06Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters of esters containing only carbon, hydrogen, and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C08J2433/08Homopolymers or copolymers of acrylic acid esters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68377Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54453Marks applied to semiconductor devices or parts for use prior to dicing

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Physical Vapour Deposition (AREA)
  • Magnetic Heads (AREA)

Abstract

The present invention provides a protective film forming film which suppresses peeling between the protective film and a chip caused by flux cleaning, a protective film forming sheet and a protective film forming composite sheet having the protective film forming film, and a method for manufacturing a device, such as a semiconductor device. A protective film forming film is a protective film forming film used for forming a protective film, wherein a shear strength at an interface between the protective film and a silicon chip after immersion in a 2-aminoethanol is 33 N/5mm or more.

Description

保護膜形成膜、保護膜形成用片、保護膜形成用複合片及裝置的製造方法Film for forming protective film, sheet for forming protective film, composite sheet for forming protective film, and manufacturing method of device

本發明涉及保護膜形成膜、保護膜形成用片、保護膜形成用複合片及裝置的製造方法。特別涉及適合用於保護半導體晶圓等工件或對工件進行加工而得到的半導體晶片等加工物的保護膜形成膜、具備該保護膜形成膜的保護膜形成用片及保護膜形成用複合片、以及半導體晶片等裝置的製造方法。The present invention relates to a protective film forming film, a sheet for forming a protective film, a composite sheet for forming a protective film, and a method for producing a device. In particular, it relates to a protective film forming film suitable for protecting a workpiece such as a semiconductor wafer or a processed product such as a semiconductor wafer obtained by processing a workpiece, a protective film forming sheet and a protective film forming composite sheet provided with the protective film forming film, and methods for manufacturing devices such as semiconductor wafers.

近年來,利用一種被稱作倒裝晶片接合(Flip-Chip Bonding)的安裝方法進行半導體裝置的製造。在該安裝方法中,在安裝具有形成有凸塊(bump)等凸狀電極的電路面的半導體晶片時,會將半導體晶片的電路面側翻轉(倒裝(face down))並接合於晶片搭載部。因此,會形成露出半導體晶片的背面側的結構,該半導體晶片的背面側未形成電路。In recent years, semiconductor devices have been manufactured using a mounting method called flip-chip bonding (Flip-Chip Bonding). In this mounting method, when mounting a semiconductor wafer having a circuit surface on which protruding electrodes such as bumps are formed, the circuit surface side of the semiconductor wafer is turned over (face down) and bonded to the chip mounting surface. department. Therefore, a structure is formed in which the back side of the semiconductor wafer on which no circuit is formed is exposed.

因此,為了保護半導體晶片以免受運輸時等的衝擊,大多在半導體晶片的背面側形成由有機材料構成的硬質的保護膜。為了形成這樣的保護膜,採用作為其前驅體的未固化的樹脂膜(以下稱作“保護膜形成膜”)。保護膜形成膜被貼附於半導體晶圓的背面,與晶圓一同進行切割從而進行單顆化(singulation)。藉由使保護膜形成膜固化,可得到在背面具有保護膜的晶片(帶保護膜的晶片)。Therefore, in order to protect the semiconductor wafer from shocks during transportation or the like, a hard protective film made of an organic material is often formed on the back side of the semiconductor wafer. In order to form such a protective film, an uncured resin film (hereinafter referred to as "protective film forming film") as its precursor is used. The protective film forming film is attached to the back surface of the semiconductor wafer, and is diced together with the wafer to perform singulation. A wafer having a protective film on the back surface (a wafer with a protective film) can be obtained by curing the protective film-forming film.

此外,為了識別半導體晶片,例如還會藉由雷射打標而在保護膜形成膜的表面上打標出標記或文字等。專利文獻1中記載了一種保護膜形成膜,其具有黏合於半導體晶片的樹脂層α和利用雷射進行了印字的樹脂層β,樹脂層β的表面的固化後的光澤度值為規定值以上。並記載了藉由該保護膜形成膜,能夠使雷射印字的辨識性良好且可提高可靠性。 現有技術文獻 專利文獻 Moreover, in order to identify a semiconductor wafer, a mark, a letter, etc. are marked on the surface of the protective film forming film by laser marking, for example. Patent Document 1 describes a protective film-forming film comprising a resin layer α bonded to a semiconductor wafer and a resin layer β printed with a laser, and the gloss value of the surface of the resin layer β after curing is equal to or greater than a specified value. . It is described that the visibility of laser printing can be improved and the reliability can be improved by forming a film of this protective film. prior art literature patent documents

專利文獻1:國際公開2014/148496號公報Patent Document 1: International Publication No. 2014/148496

本發明要解決的技術問題The technical problem to be solved in the present invention

在藉由倒裝方式在基板上安裝帶保護膜的晶片時,帶保護膜的晶片與基板之間例如藉由回流焊處理等加熱步驟而進行電接合及機械接合。為了良好地進行該接合,通常在帶保護膜的晶片的電極部分及基板的電極部分中的至少一部分上塗佈助焊劑(flux)後,進行加熱步驟。When mounting a chip with a protective film on a substrate by flip-chip, the chip with a protective film and the substrate are electrically bonded and mechanically bonded, for example, through heating steps such as reflow processing. In order to perform this bonding satisfactorily, a heating step is usually performed after coating flux (flux) on at least a part of the electrode portion of the wafer with a protective film and the electrode portion of the substrate.

助焊劑中包含樹脂、溶劑、活性劑、黏度調節劑等。進行回流焊處理時,帶保護膜的晶片的電極部分與基板的電極部分熔融並接合時,大部分助焊劑會揮發。然而,回流焊處理後,有時會在安裝有帶保護膜的晶片的基板上產生助焊劑殘渣。Flux contains resins, solvents, activators, viscosity modifiers, etc. During the reflow process, most of the flux will volatilize when the electrode portion of the wafer with the protective film and the electrode portion of the substrate are fused and bonded. However, after the reflow process, flux residues may be generated on the substrate on which the wafer with the protective film is mounted.

由於這樣的助焊劑殘渣會導致電路不暢通(conduction failure)、腐蝕、外觀不良等,因此通常藉由清洗助焊劑而將其去除。用於清洗助焊劑的清洗劑(助焊劑清洗劑)中包含用於去除助焊劑殘渣的溶劑。Since such flux residues can cause conduction failure, corrosion, poor appearance, etc., they are usually removed by cleaning the flux. The cleaning agent (flux remover) used to remove flux contains a solvent for removing flux residues.

本申請的發明人發現,在清洗助焊劑時,若用於清洗助焊劑的清洗劑中所含的溶劑滲入到保護膜與晶片之間的介面處,則在安裝基板的可靠性試驗中,保護膜與晶片之間的剝離會變得顯著。The inventors of the present application have found that when cleaning the flux, if the solvent contained in the cleaning agent for cleaning the flux penetrates into the interface between the protective film and the wafer, the protective film will not be protected in the reliability test of the mounting substrate. Delamination between the film and the wafer can become significant.

本發明是鑒於這樣的發現而完成的,其目的在於提供一種抑制了因清洗助焊劑導致的保護膜與晶片之間的剝離的保護膜形成膜、具備該保護膜形成膜的保護膜形成用片及保護膜形成用複合片、以及半導體裝置等裝置的製造方法。 解決技術問題的技術手段 The present invention was made in view of such findings, and an object of the present invention is to provide a protective film forming film that suppresses peeling between the protective film and the wafer due to cleaning flux, and a protective film forming sheet including the protective film forming film. and a method for manufacturing devices such as a composite sheet for forming a protective film and a semiconductor device. Technical means to solve technical problems

本發明的方案如下所述。 [1] 一種保護膜形成膜,其為用於形成保護膜的保護膜形成膜,其中, 浸漬於2-氨基乙醇後的保護膜與矽晶片之間的介面的剪切強度為33N/5mm以上。 [2] 根據[1]所述的保護膜形成膜,其中,保護膜表面的2-氨基乙醇的接觸角小於55∘。 [3] 根據[1]或[2]所述的保護膜形成膜,其中,浸漬於2-氨基乙醇後的保護膜表面的光澤度值相對於浸漬於2-氨基乙醇前的保護膜表面的光澤度值之比為40%以上且小於130%。 [4] 根據[1]~[3]中任一項所述的保護膜形成膜,其中,浸漬於2-氨基乙醇後的保護膜的楊氏模量小於1000MPa。 [5] 根據[1]~[4]中任一項所述的保護膜形成膜,其中,浸漬於2-氨基乙醇後的保護膜的斷裂伸長率為15%以上。 [6] 一種保護膜形成用片,其具有[1]~[5]中任一項所述的保護膜形成膜與配置在保護膜形成膜的至少一個主面上的剝離膜。 [7] 一種保護膜形成用複合片,其具有[1]~[5]中任一項所述的保護膜形成膜與支撐保護膜形成膜的支撐片。 [8] 一種裝置的製造方法,其具有: 將[6]所述的保護膜形成用片的保護膜形成膜或[7]所述的保護膜形成用複合片的保護膜形成膜貼附於工件背面的步驟, 將所貼附的保護膜形成膜製成保護膜的步驟, 將背面具有保護膜或保護膜形成膜的工件單顆化,得到多個帶保護膜或保護膜形成膜的工件的加工物的步驟, 使帶保護膜或保護膜形成膜的工件的加工物與助焊劑接觸而將其配置在基板上的步驟, 對配置在基板上的帶保護膜或保護膜形成膜的工件的加工物與基板進行加熱的步驟,及, 利用助焊劑清洗劑對配置有帶保護膜的工件的加工物的基板進行清洗的步驟。 [9] 根據[8]所述的裝置的製造方法,其具有對保護膜或保護膜形成膜進行雷射打標的步驟。 發明效果 The scheme of the present invention is as follows. [1] A protective film forming film, which is a protective film forming film for forming a protective film, wherein, The shear strength of the interface between the protective film and the silicon wafer dipped in 2-aminoethanol is above 33N/5mm. [2] The protective film-forming film according to [1], wherein the contact angle of 2-aminoethanol on the surface of the protective film is less than 55∘. [3] The protective film-forming film according to [1] or [2], wherein the gloss value of the surface of the protective film after immersion in 2-aminoethanol is higher than that of the surface of the protective film before immersion in 2-aminoethanol The ratio of the gloss value is 40% or more and less than 130%. [4] The protective film-forming film according to any one of [1] to [3], wherein the Young's modulus of the protective film after immersion in 2-aminoethanol is less than 1000 MPa. [5] The protective film-forming film according to any one of [1] to [4], wherein the protective film after immersion in 2-aminoethanol has an elongation at break of 15% or more. [6] A sheet for forming a protective film comprising the protective film forming film according to any one of [1] to [5] and a release film disposed on at least one main surface of the protective film forming film. [7] A composite sheet for forming a protective film, comprising the protective film forming film according to any one of [1] to [5], and a support sheet for supporting the protective film forming film. [8] A method of manufacturing a device, comprising: A step of attaching the protective film-forming film of the protective film-forming sheet described in [6] or the protective film-forming film of the protective film-forming composite sheet described in [7] to the back surface of the workpiece, the step of making the attached protective film forming film into a protective film, A step of singulating the workpiece having a protective film or a protective film forming film on the back surface to obtain a processed product of a plurality of workpieces having a protective film or a protective film forming film, A step of arranging the processed object of the workpiece with a protective film or a protective film forming film on the substrate by contacting it with flux, a step of heating the substrate and the workpiece of the workpiece with the protective film or the protective film forming film disposed on the substrate; and, A step of cleaning the substrate on which the processed object of the workpiece with a protective film is placed with a flux cleaning agent. [9] The method of manufacturing the device according to [8], which includes a step of performing laser marking on the protective film or the protective film forming film. Invention effect

根據本發明,能夠提供一種抑制了因清洗助焊劑導致的保護膜與晶片等工件的加工物之間的剝離的保護膜形成膜、具備該保護膜形成膜的保護膜形成用片及保護膜形成用複合片、以及半導體裝置等裝置的製造方法。According to the present invention, it is possible to provide a protective film forming film which suppresses peeling between the protective film and workpieces such as wafers due to cleaning flux, a protective film forming sheet and a protective film forming film provided with the protective film forming film. Manufacturing methods for devices such as composite sheets and semiconductor devices.

以下,基於具體的實施方案,利用附圖對本發明進行詳細說明。首先,對本說明書中所使用的主要的術語進行說明。Hereinafter, based on specific embodiments, the present invention will be described in detail using the drawings. First, main terms used in this specification will be described.

工件為貼附本實施方案的保護膜形成膜並進行加工的板狀體。作為工件,例如可列舉出晶圓、面板。具體而言,可列舉出半導體晶圓、半導體面板。作為工件的加工物,例如可列舉出將晶圓單顆化而得到的晶片。具體而言,可例示出將半導體晶圓單顆化而得到的半導體晶片。此時,保護膜形成於晶圓及晶片的背面側。The workpiece is a plate-like body formed by attaching and processing the protective film of the present embodiment. Examples of the workpiece include wafers and panels. Specifically, a semiconductor wafer and a semiconductor panel are mentioned. Examples of the workpiece to be processed include wafers obtained by singulating wafers. Specifically, a semiconductor wafer obtained by singulating a semiconductor wafer can be exemplified. At this time, the protective film is formed on the wafer and the back side of the wafer.

晶圓等工件的“表面”是指形成有電路、凸塊等凸狀電極等的面;“背面”是指未形成電路、電極(例如凸塊等凸狀電極)等的面。The "surface" of a workpiece such as a wafer refers to the surface on which circuits and protruding electrodes such as bumps are formed; the "back surface" refers to the surface on which no circuits or electrodes (such as protruding electrodes such as bumps) are formed.

晶圓的單顆化是指,按照每個電路分割晶圓從而得到晶片。Singulation of a wafer refers to dividing the wafer for each circuit to obtain a wafer.

在本說明書中,例如將“(甲基)丙烯酸酯”用作表示“丙烯酸酯”及“甲基丙烯酸酯”這兩者的術語,其他類似術語也相同。In this specification, for example, "(meth)acrylate" is used as a term showing both "acrylate" and "methacrylate", and other similar terms are also the same.

“能量射線”是指紫外線、電子束等,優選為紫外線。"Energy rays" means ultraviolet rays, electron beams, etc., preferably ultraviolet rays.

剝離膜是以可剝離的方式支撐保護膜形成膜的膜。對於膜,不限定其厚度,也用作包含片的概念。The release film is a film that supports the protective film forming film in a peelable manner. Regarding the film, the thickness thereof is not limited, and it is also used as a concept including a sheet.

與保護膜形成膜用組合物等組合物相關的說明中的質量比為基於有效成分(固體成分)的質量比,除另有說明外,不計入溶劑。The mass ratio in the description of compositions such as the protective film-forming composition is based on the active ingredient (solid content), and the solvent is not included unless otherwise specified.

(1. 保護膜形成膜) 藉由將本實施方案的保護膜形成膜貼附於工件並製成保護膜,從而形成用於保護工件或工件的加工物的保護膜。 (1. Protective film forming film) By attaching the protective film-forming film of this embodiment to a workpiece and forming a protective film, a protective film for protecting a workpiece or a processed product of the workpiece is formed.

“製成保護膜”是指,使保護膜形成膜成為具有充分的保護工件或工件的加工物的特性的狀態。具體而言,當本實施方案的保護膜形成膜為固化性時,“製成保護膜”是指,使未固化的保護膜形成膜成為固化物。換而言之,製成了保護膜的保護膜形成膜為保護膜形成膜的固化物,與保護膜形成膜不同。"Creating a protective film" means bringing the protective film forming film into a state having sufficient properties to protect a workpiece or a processed product of the workpiece. Specifically, when the protective film-forming film of the present embodiment is curable, "forming a protective film" means making an uncured protective film-forming film into a cured product. In other words, the protective-film-forming film on which the protective film is formed is a cured product of the protective-film-forming film, and is different from the protective-film-forming film.

在固化性保護膜形成膜上重疊工件後,使保護膜形成膜固化,由此能夠使保護膜牢固地黏合於工件,且能夠形成具有耐久性的保護膜。After laminating the workpiece on the curable protective film forming film, the protective film forming film can be cured, whereby the protective film can be firmly adhered to the workpiece, and a durable protective film can be formed.

另一方面,當本實施方案的保護膜形成膜不含有固化性成分而以非固化狀態進行使用時,從本實施方案的保護膜形成膜被貼附於工件的時刻起,該保護膜形成膜即被製成了保護膜。換而言之,製成保護膜後的保護膜形成膜與保護膜形成膜相同。On the other hand, when the protective film-forming film of the present embodiment does not contain a curable component and is used in an uncured state, the protective film-forming film of the present embodiment is attached to the workpiece from the moment when the protective film-forming film That is, a protective film is made. In other words, the protective film-forming film formed as a protective film is the same as the protective film-forming film.

在不追求高保護性能時,無需使保護膜形成膜固化,因此保護膜形成膜易於使用。When high protective performance is not pursued, the protective film forming film does not need to be cured, so the protective film forming film is easy to use.

在本實施方案中,保護膜形成膜優選為固化性。因此,保護膜優選為固化物。作為固化物,例如可例示出熱固化物、能量射線固化物。在本實施方案中,保護膜更優選為熱固化物。In the present embodiment, the protective film-forming film is preferably curable. Therefore, the protective film is preferably a cured product. As a hardened|cured material, a thermosetting material and an energy-beam cured material can be illustrated, for example. In the present embodiment, the protective film is more preferably a thermally cured product.

此外,優選保護膜形成膜在常溫(23℃)下具有黏著性或藉由加熱而發揮黏著性。由此,在保護膜形成膜上重疊工件時可將二者貼合。因此,能夠確保在使保護膜形成膜固化前進行定位。Moreover, it is preferable that the protective film forming film has adhesiveness at normal temperature (23 degreeC), or develops adhesiveness by heating. Thereby, both can be bonded together when a workpiece|work is superimposed on a protective film forming film. Therefore, positioning can be ensured before hardening the protective film forming film.

保護膜形成膜可以由一層(單層)構成,也可以由兩層以上的多個層構成。當保護膜形成膜具有多個層時,這些多個層可以彼此相同也可以彼此不同,構成這些多個層的層的組合沒有特別限制。The protective film forming film may be composed of one layer (single layer), or may be composed of a plurality of layers of two or more layers. When the protective film forming film has a plurality of layers, the plurality of layers may be the same as or different from each other, and the combination of layers constituting the plurality of layers is not particularly limited.

在本實施方案中,保護膜形成膜優選為一層(單層)。一層保護膜形成膜,在厚度方面可獲得高精度,因此易於生產。此外,若保護膜形成膜由多個層構成,則需要考慮層間的密合性及各層的伸縮性,存在由此導致從被黏物上剝離的風險。當保護膜形成膜為一層時,能夠降低上述的風險,設計的自由度也會增高。此外,在發生溫度變化的步驟(回流焊處理時或使用裝置時)中,還能夠降低因層間的熱伸縮性差異而發生層間剝離的風險。In the present embodiment, the protective film forming film is preferably one layer (single layer). A protective film is formed into a film, and high precision can be obtained in terms of thickness, so it is easy to produce. In addition, when the protective film forming film is composed of a plurality of layers, it is necessary to consider the adhesiveness between the layers and the stretchability of each layer, and there is a risk of peeling from the adherend due to this. When the protective film is formed in one layer, the above-mentioned risks can be reduced, and the degree of freedom in design can also be increased. In addition, it is also possible to reduce the risk of interlayer delamination due to differences in thermal stretchability between layers in steps where temperature changes occur (during reflow processing or when using devices).

保護膜形成膜的厚度沒有特別限制,但優選為100μm以下、70μm以下、45μm以下、30μm以下。此外,保護膜形成膜的厚度優選為5μm以上、10μm以上、15μm以上。若保護膜形成膜的厚度在上述範圍內,則所得到的保護膜的保護性能良好。The thickness of the protective film-forming film is not particularly limited, but is preferably 100 μm or less, 70 μm or less, 45 μm or less, and 30 μm or less. In addition, the thickness of the protective film-forming film is preferably 5 μm or more, 10 μm or more, or 15 μm or more. When the thickness of a protective film forming film exists in the said range, the protective performance of the protective film obtained will become favorable.

另外,保護膜形成膜的厚度是指保護膜形成膜整體的厚度。例如,由多個層構成的保護膜形成膜的厚度是指構成保護膜形成膜的所有層的合計厚度。In addition, the thickness of a protective film forming film means the thickness of the whole protective film forming film. For example, the thickness of the protective film forming film which consists of several layers means the total thickness of all the layers which comprise a protective film forming film.

以下,對形成在作為工件的加工物的晶片上的保護膜進行說明。具體而言,使用圖1所示的帶保護膜的晶片70,對將本實施方案的保護膜形成膜製成保護膜而形成的保護膜進行說明。Hereinafter, a protective film formed on a wafer as a workpiece to be processed will be described. Specifically, the protective film formed by making the protective film forming film of this embodiment into a protective film is demonstrated using the wafer 70 with a protective film shown in FIG.

如圖1所示,帶保護膜的晶片70在晶片6a的背面側(圖1中的上方側)形成有保護膜1,在晶片6a的表面側(圖1中的下方側)形成有凸狀電極6b。As shown in FIG. 1, in the wafer 70 with a protective film, the protective film 1 is formed on the back side (upper side in FIG. 1) of the wafer 6a, and a convex shape is formed on the front side (lower side in FIG. 1) of the wafer 6a. Electrode 6b.

在晶片6a的表面側形成有電路,凸狀電極6b以與電路電連接的方式而形成。作為凸狀電極6b,可例示出凸塊、柱形電極(pillar electrode)等。A circuit is formed on the surface side of the wafer 6a, and the protruding electrode 6b is formed so as to be electrically connected to the circuit. A bump, a pillar electrode, etc. can be illustrated as the convex electrode 6b.

在本實施方案中,帶保護膜的晶片70以形成有凸狀電極6b的面朝向晶片搭載用基板的方式配置在晶片搭載用基板上。此時,在晶片搭載用基板上的與帶保護膜的晶片70相對應的位置或者在凸狀電極上,塗佈用於將帶保護膜的晶片70與晶片搭載用基板接合的助焊劑或焊膏(solder paste)。然後,藉由特定的加熱處理(例如,回流焊處理),將凸狀電極6b與該基板電接合及機械接合,從而將帶保護膜的晶片70安裝在該基板上。In the present embodiment, the wafer 70 with a protective film is placed on the wafer mounting substrate such that the surface on which the protruding electrodes 6b are formed faces the wafer mounting substrate. At this time, flux or solder for bonding the wafer 70 with a protective film to the substrate for mounting a wafer is applied to a position corresponding to the wafer 70 with a protective film on the substrate for mounting the wafer or on the protruding electrodes. paste (solder paste). Then, the protruding electrodes 6b are electrically and mechanically bonded to the substrate by specific heat treatment (for example, reflow process), and the chip 70 with a protective film is mounted on the substrate.

助焊劑可用於清洗電極、去除焊料的氧化膜、降低焊料的表面張力等。焊膏中也包含助焊劑。助焊劑中包含例如包含松香或松香改性物的樹脂、溶劑、用於去除氧化物的活性劑、黏度調節劑等。Flux can be used to clean electrodes, remove the oxide film of solder, reduce the surface tension of solder, etc. Solder paste also contains flux. The flux contains, for example, a resin containing rosin or a modified rosin, a solvent, an activator for removing oxides, a viscosity modifier, and the like.

大部分助焊劑會藉由回流焊處理等的加熱而揮發,但有時會在塗佈助焊劑的部位產生助焊劑殘渣。此外,在塗佈助焊劑時,有時也會將助焊劑塗佈於非預期的部位,從而在該部位上產生助焊劑殘渣。這樣的助焊劑殘渣會引起底部填充(underfill)的密合性不良、遷移(migration)等腐蝕、外觀不良等,因此會對安裝有帶保護膜的晶片的基板進行助焊劑的清洗以去除助焊劑殘渣。Most of the flux is volatilized by heating such as reflow process, but flux residue may be generated on the part where the flux is applied. In addition, when flux is applied, flux may be applied to an unintended portion, and flux residue may be generated on the portion. Such flux residues can cause poor adhesion of underfill, corrosion such as migration, and poor appearance, so flux cleaning is performed on the substrate on which the wafer with a protective film is mounted to remove the flux. residue.

在清洗助焊劑時,會將安裝有帶保護膜的晶片的基板整體浸漬於清洗劑液體中、或對該基板整體噴射清洗劑液體等,使帶保護膜的晶片與清洗劑接觸。When cleaning the flux, the entire substrate on which the wafer with a protective film is mounted is immersed in a cleaning solution, or the cleaning solution is sprayed on the entire substrate, and the wafer with a protective film is brought into contact with the cleaning solution.

若清洗劑與帶保護膜的晶片接觸,則清洗劑中所含的成分有時會滲入到保護膜與晶片之間的介面處。其結果,在安裝後的基板的可靠性試驗中,會在保護膜與晶片之間的介面處發生浮起或剝離從而使可靠性下降。在本實施方案中,為了抑制因清洗助焊劑導致的保護膜與晶片之間的介面的浮起、剝離,藉由以下方式控制保護膜的物理特性。另外,以下所示的保護膜的物理特性為將保護膜形成膜製成保護膜後的物理特性。When the cleaning agent comes into contact with the wafer with the protective film, components contained in the cleaning agent may infiltrate into the interface between the protective film and the wafer. As a result, in the reliability test of the mounted substrate, floating or peeling occurs at the interface between the protective film and the wafer, thereby reducing reliability. In the present embodiment, in order to suppress the floating and peeling of the interface between the protective film and the wafer due to flux cleaning, the physical properties of the protective film are controlled in the following manner. In addition, the physical characteristics of the protective film shown below are physical characteristics after making a protective film into a protective film.

(1.1 浸漬於2-氨基乙醇後的保護膜與矽晶片之間的介面的剪切強度) 作為用於清洗助焊劑的清洗劑中所含的成分,可例示出醇類清洗劑、胺類清洗劑等。因此,在本實施方案中,選擇2-氨基乙醇作為清洗劑中所含的成分,並示出能夠抑制2-氨基乙醇滲入到保護膜與晶片之間的介面處的構成。 (1.1 Shear strength of the interface between the protective film and the silicon wafer after dipping in 2-aminoethanol) Alcohol type cleaning agents, amine type cleaning agents, etc. are illustrated as a component contained in the cleaning agent for cleaning flux. Therefore, in this embodiment, 2-aminoethanol is selected as a component contained in the cleaning agent, and a configuration capable of suppressing penetration of 2-aminoethanol into the interface between the protective film and the wafer is shown.

在本實施方案中,浸漬於2-氨基乙醇後的保護膜與矽晶片之間的介面的剪切強度為33N/5mm以上。藉由使介面的剪切強度在上述範圍內,即使2-氨基乙醇與帶保護膜的晶片接觸,也因可良好地保持保護膜與晶片之間的介面的密合性而能夠抑制2-氨基乙醇向保護膜與晶片之間的介面滲入。因此,能夠提高帶保護膜的晶片的介面的黏合可靠性。In this embodiment, the shear strength of the interface between the protective film dipped in 2-aminoethanol and the silicon wafer is greater than 33 N/5mm. By making the shear strength of the interface within the above range, even if 2-aminoethanol is in contact with the wafer with the protective film, the adhesion of the interface between the protective film and the wafer can be well maintained and the 2-aminoethanol can be inhibited. Ethanol permeates into the interface between the protective film and the wafer. Therefore, the adhesion reliability of the interface of the wafer with a protective film can be improved.

介面的剪切強度優選為35N/5mm以上,更優選為38N/5mm以上。另一方面,介面的剪切強度的上限值沒有特別限制,但從構成材料及製作方法的角度出發,優選為60N/5mm以下,更優選為50N/5mm以下。The shear strength of the interface is preferably 35 N/5 mm or more, more preferably 38 N/5 mm or more. On the other hand, the upper limit of the shear strength of the interface is not particularly limited, but is preferably 60 N/5 mm or less, more preferably 50 N/5 mm or less, from the viewpoint of constituent materials and manufacturing methods.

(1.2 保護膜表面的2-氨基乙醇的接觸角) 在本實施方案中,優選保護膜表面的2-氨基乙醇的接觸角小於55∘。藉由使接觸角在上述範圍內, 2-氨基乙醇容易潤濕保護膜表面並在該表面擴散。其結果,與保護膜接觸的2-氨基乙醇易於被保護膜吸收,從而能夠抑制2-氨基乙醇滲入到保護膜與晶片之間的介面處。 (1.2 Contact angle of 2-aminoethanol on the surface of the protective film) In this embodiment, it is preferable that the contact angle of 2-aminoethanol on the surface of the protective film is less than 55∘. By making the contact angle within the above range, 2-aminoethanol easily wets the surface of the protective film and diffuses on the surface. As a result, the 2-aminoethanol that is in contact with the protective film is easily absorbed by the protective film, so that penetration of 2-aminoethanol into the interface between the protective film and the wafer can be suppressed.

保護膜表面的2-氨基乙醇的接觸角更優選為52∘以下,進一步優選為48∘以下。另一方面,該接觸角的下限值沒有特別限制,但優選為30∘以上,更優選為40∘以上。The contact angle of 2-aminoethanol on the surface of the protective film is more preferably 52∘ or less, and still more preferably 48∘ or less. On the other hand, the lower limit of the contact angle is not particularly limited, but is preferably 30∘ or more, more preferably 40∘ or more.

2-氨基乙醇的接觸角藉由公知的方法進行測定即可。具體的測定方法在實施例中進行說明。The contact angle of 2-aminoethanol may be measured by a known method. The specific measurement method is described in the examples.

(1.3 浸漬於2-氨基乙醇前後的保護膜表面的光澤度變化率) 在本實施方案中,浸漬於2-氨基乙醇前後的保護膜表面的光澤度變化率優選為40%以上且小於130%。光澤度變化率以浸漬於2-氨基乙醇後的保護膜表面的光澤度值相對於浸漬於2-氨基乙醇前的保護膜表面的光澤度值之比進行表示。 (1.3 Gloss change rate of the protective film surface before and after immersion in 2-aminoethanol) In the present embodiment, the rate of change in glossiness of the surface of the protective film before and after immersion in 2-aminoethanol is preferably 40% or more and less than 130%. The rate of change in glossiness is represented by the ratio of the glossiness value of the surface of the protective film after immersion in 2-aminoethanol to the glossiness value of the surface of the protective film before immersion in 2-aminoethanol.

因2-氨基乙醇與保護膜接觸,保護膜的表面狀態發生變化。其結果,表示保護膜表面的光澤度的光澤度值也發生變化。然而,為了容易識別帶保護膜的晶片,有時會對保護膜的表面進行打標。作為該打標,可例示出雷射打標。藉由進行雷射打標,保護膜的表面被切削、或保護膜的體積增加從而形成凸狀部。When 2-aminoethanol comes into contact with the protective film, the surface state of the protective film changes. As a result, the gloss value indicating the gloss of the surface of the protective film also changes. However, in order to easily identify a wafer with a protective film, the surface of the protective film is sometimes marked. As this marking, laser marking can be exemplified. By performing laser marking, the surface of the protective film is cut or the volume of the protective film is increased to form convex portions.

即,由於雷射打標也會使保護膜的表面狀態發生變化,因此若保護膜的表面狀態因浸漬於2-氨基乙醇而發生大幅變化,標記的識別性有時會下降。That is, since laser marking also changes the surface state of the protective film, if the surface state of the protective film is greatly changed by immersion in 2-aminoethanol, the visibility of the marking may decrease.

因此,藉由使光澤度變化率在上述範圍內,能夠抑制浸漬於2-氨基乙醇引起的保護膜的表面狀態的變化,且能夠良好地保持標記的識別性。Therefore, by setting the rate of change in glossiness within the above-mentioned range, it is possible to suppress changes in the surface state of the protective film caused by immersion in 2-aminoethanol, and to maintain good marking visibility.

光澤度變化率更優選為120%以下。另一方面,光澤度變化率更優選為80%以上,進一步優選為95%以上。The rate of change in glossiness is more preferably 120% or less. On the other hand, the rate of change in glossiness is more preferably 80% or more, and still more preferably 95% or more.

浸漬於2-氨基乙醇前後的保護膜的光澤度值可依據JIS Z 8741進行測定。即,以與JIS Z 8741所規定的測定方法相同的方法進行測定,但測定條件可以不同。具體的測定方法在實施例中進行說明。The gloss value of the protective film before and after dipping in 2-aminoethanol can be measured in accordance with JIS Z 8741. That is, the measurement is performed by the same method as that specified in JIS Z 8741, but the measurement conditions may be different. The specific measurement method is described in the examples.

(1.4 浸漬於2-氨基乙醇後的保護膜的楊氏模量) 在本實施方案中,優選浸漬於2-氨基乙醇後的保護膜的楊氏模量小於1000MPa。認為藉由使楊氏模量在上述範圍內,保護膜會在保持與晶片的密合性的狀態下變得軟質。即,認為即使2-氨基乙醇與帶保護膜的晶片接觸,在2-氨基乙醇滲入到保護膜與晶片之間的介面處之前,保護膜也會吸收2-氨基乙醇,從而使得保護膜性質發生變化而變得柔軟。進一步,由於保護膜性質發生變化而變得柔軟,因此在伴有急劇的溫度變化的可靠性試驗中,能夠降低因急劇的溫度變化而施加在保護膜與晶片之間的介面處的應力,從而能夠進一步抑制介面的浮起或剝離。 (1.4 Young's modulus of protective film after immersion in 2-aminoethanol) In this embodiment, the Young's modulus of the protective film after dipping in 2-aminoethanol is preferably less than 1000 MPa. It is considered that the protective film becomes soft while maintaining the adhesiveness with the wafer by setting the Young's modulus within the above range. That is, it is considered that even if 2-aminoethanol is in contact with a wafer with a protective film, the protective film absorbs 2-aminoethanol before 2-aminoethanol penetrates into the interface between the protective film and the wafer, thereby causing the properties of the protective film to develop. change and become soft. Furthermore, since the properties of the protective film change and become soft, in a reliability test accompanied by a sudden temperature change, the stress applied to the interface between the protective film and the wafer due to the sudden temperature change can be reduced, thereby Lifting or peeling of the interface can be further suppressed.

更優選浸漬於2-氨基乙醇後的保護膜的楊氏模量為900MPa以下,進一步優選為800MPa以下。另一方面,浸漬於2-氨基乙醇後的保護膜的楊氏模量的下限值沒有特別限制,但從發揮保護膜的功能的角度出發,優選為300MPa以上,進一步優選為500MPa以上。The Young's modulus of the protective film after immersion in 2-aminoethanol is more preferably 900 MPa or less, still more preferably 800 MPa or less. On the other hand, the lower limit of the Young's modulus of the protective film dipped in 2-aminoethanol is not particularly limited, but is preferably 300 MPa or more, more preferably 500 MPa or more, from the viewpoint of functioning the protective film.

浸漬於2-氨基乙醇後的保護膜的楊氏模量可依據JIS K 7127進行測定。即,以與JIS K 7127所規定的測定方法相同的方法進行測定,但測定條件可以不同。具體的測定方法在實施例中進行說明。The Young's modulus of the protective film after immersion in 2-aminoethanol can be measured based on JISK7127. That is, the measurement is performed by the same method as that specified in JIS K 7127, but the measurement conditions may be different. The specific measurement method is described in the examples.

(1.5 浸漬於2-氨基乙醇後的保護膜的斷裂伸長率) 在本實施方案中,優選浸漬於2-氨基乙醇後的保護膜的斷裂伸長率為15%以上。認為藉由使斷裂伸長率在上述範圍內,與楊氏模量的情況相同,保護膜在保持與晶片的密合性的狀態下變得軟質。即,認為即使2-氨基乙醇與帶保護膜的晶片接觸,在2-氨基乙醇滲入到保護膜與晶片之間的介面處之前,保護膜也會吸收2-氨基乙醇,使得保護膜性質發生變化而變得柔軟。進一步,由於保護膜性質發生變化而變得柔軟,因此在伴有急劇的溫度變化的可靠性試驗中,能夠降低因急劇的溫度變化而施加在保護膜與晶片之間的介面處的應力,從而能夠進一步抑制介面的浮起或剝離。 (1.5 Elongation at break of protective film after dipping in 2-aminoethanol) In the present embodiment, the elongation at break of the protective film dipped in 2-aminoethanol is preferably 15% or more. It is considered that the protective film becomes soft while maintaining the adhesiveness with the wafer by setting the elongation at break within the above range, as in the case of Young's modulus. That is, it is considered that even if 2-aminoethanol is in contact with a wafer with a protective film, the protective film absorbs 2-aminoethanol before 2-aminoethanol penetrates into the interface between the protective film and the wafer, so that the properties of the protective film change And become soft. Furthermore, since the properties of the protective film change and become soft, in a reliability test accompanied by a sudden temperature change, the stress applied to the interface between the protective film and the wafer due to the sudden temperature change can be reduced, thereby Lifting or peeling of the interface can be further suppressed.

浸漬於2-氨基乙醇後的保護膜的斷裂伸長率更優選為17%以上,進一步優選為19%以上。另一方面,浸漬於2-氨基乙醇後的保護膜的斷裂伸長率的上限值沒有特別限制,但從發揮保護膜的功能的角度出發,更優選為40%以下,進一步優選為30%以下。The elongation at break of the protective film after immersion in 2-aminoethanol is more preferably 17% or more, and still more preferably 19% or more. On the other hand, the upper limit of the elongation at break of the protective film after immersion in 2-aminoethanol is not particularly limited, but from the viewpoint of performing the function of the protective film, it is more preferably 40% or less, more preferably 30% or less .

浸漬於2-氨基乙醇後的保護膜的斷裂伸長率依據JIS K 7127、與楊氏模量同時測定即可。具體的測定方法在實施例中進行說明。The elongation at break of the protective film after dipping in 2-aminoethanol may be measured simultaneously with Young's modulus in accordance with JIS K 7127. The specific measurement method is described in the examples.

(1.6 保護膜形成膜用組合物) 只要保護膜具有上述的物理特性,則保護膜形成膜的組成沒有特別限定。在本實施方案中,構成保護膜形成膜的組合物(保護膜形成膜用組合物)優選為至少含有聚合物成分(A)、固化性成分(B)、填充材料(E)及偶聯劑(F)的樹脂組合物。聚合物成分可視為聚合性化合物進行聚合反應而形成的成分。此外,固化性成分為可進行固化(聚合)反應的成分。另外,在本發明中,聚合反應也包括縮聚反應。 (1.6 Composition for Forming a Protective Film) The composition of the protective film forming film is not particularly limited as long as the protective film has the above-mentioned physical properties. In this embodiment, the composition constituting the protective film forming film (the composition for forming a protective film) preferably contains at least a polymer component (A), a curable component (B), a filler (E) and a coupling agent. (F) The resin composition. The polymer component can be regarded as a component formed by the polymerization reaction of a polymerizable compound. In addition, a curable component is a component which can undergo a curing (polymerization) reaction. In addition, in the present invention, the polymerization reaction also includes polycondensation reaction.

此外,聚合物成分中所含的成分有時也屬於固化性成分。在本實施方案中,當保護膜形成膜用組合物含有這種既屬於聚合物成分又屬於固化性成分的成分時,視為保護膜形成膜用組合物含有聚合物成分及固化性成分這兩者。In addition, components contained in polymer components may also belong to curable components. In this embodiment, when the composition for forming a protective film contains such a component as both a polymer component and a curable component, it is considered that the composition for forming a protective film contains both a polymer component and a curable component. By.

(1.6.1 聚合物成分) 聚合物成分(A)在使保護膜形成膜具有膜形成性(成膜性)的同時,還賦予其適度的黏性(tack),從而確保將保護膜形成膜均一地貼附於工件。聚合物成分的重均分子量通常為5萬~200萬,優選為10萬~150萬,特別優選在20萬~100萬的範圍內。作為這樣的聚合物成分,例如可使用丙烯酸樹脂、氨基甲酸酯樹脂、苯氧基樹脂、矽酮樹脂、飽和聚酯樹脂等,特別優選使用丙烯酸樹脂。 (1.6.1 Polymer composition) The polymer component (A) not only imparts film-forming properties (film-forming properties) to the protective film-forming film, but also imparts appropriate tack to ensure uniform adhesion of the protective film-forming film to the workpiece. The weight-average molecular weight of the polymer component is usually 50,000 to 2 million, preferably 100,000 to 1.5 million, particularly preferably 200,000 to 1 million. As such a polymer component, for example, acrylic resins, urethane resins, phenoxy resins, silicone resins, saturated polyester resins, etc. can be used, and acrylic resins are particularly preferably used.

另外,在本說明書中,只要沒有特別說明,則“重均分子量”是指藉由凝膠滲透色譜(GPC)法而測定的聚苯乙烯換算值。在基於該方法而進行的測定中,例如使用在TOSOH CORPORATION製造的高速GPC裝置“HLC-8120GPC”上依次連接高速色譜柱“TSK guard column H XL-H”、“TSK Gel GMH XL”、“TSK Gel G2000 H XL”(以上均為TOSOH CORPORATION製造)而成的設備,在色譜柱溫度為40℃、進液速度為1.0mL/分鐘的條件下,將示差折射率檢測器作為檢測器而進行測定。 In addition, in this specification, unless otherwise indicated, a "weight average molecular weight" means the polystyrene conversion value measured by the gel permeation chromatography (GPC) method. In the measurement based on this method, for example, high-speed chromatography columns "TSK guard column H XL -H", "TSK Gel GMH XL ", "TSK Gel GMH XL ", "TSK Gel G2000 H XL "(all of the above are manufactured by TOSOH CORPORATION) is used for measurement with a differential refractive index detector as a detector under the conditions of a column temperature of 40°C and a liquid feed rate of 1.0mL/min. .

作為丙烯酸樹脂,例如可列舉出由(甲基)丙烯酸酯單體與衍生自(甲基)丙烯酸衍生物的結構單元構成的(甲基)丙烯酸酯共聚物。其中,作為(甲基)丙烯酸酯單體,可優選列舉出烷基的碳原子數為1~18的(甲基)丙烯酸烷基酯,具體可列舉出(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯等。此外,作為(甲基)丙烯酸衍生物,例如可列舉出(甲基)丙烯酸、(甲基)丙烯酸縮水甘油酯、(甲基)丙烯酸羥基乙酯等。As an acrylic resin, the (meth)acrylate copolymer which consists of a (meth)acrylate monomer and the structural unit derived from a (meth)acrylic acid derivative is mentioned, for example. Among them, as the (meth)acrylate monomer, preferably an alkyl (meth)acrylate having an alkyl group of 1 to 18 carbon atoms, specifically methyl (meth)acrylate, (meth)acrylate, base) ethyl acrylate, propyl (meth)acrylate, butyl (meth)acrylate, etc. Moreover, as a (meth)acrylic acid derivative, (meth)acrylic acid, glycidyl (meth)acrylate, hydroxyethyl (meth)acrylate, etc. are mentioned, for example.

在本實施方案中,為了控制對工件的黏合性或黏著物性,優選使用丙烯酸羥基乙酯等而向丙烯酸樹脂中引入羥基。In the present embodiment, it is preferable to introduce hydroxyl groups into the acrylic resin using hydroxyethyl acrylate or the like in order to control the adhesiveness or stickiness to the workpiece.

丙烯酸樹脂的玻璃化轉變溫度優選為-70℃~40℃、-35℃~35℃、-20℃~30℃、-10℃~25℃、-5℃~20℃。藉由將丙烯酸樹脂的玻璃化轉變溫度的下限值設為上述值,保護膜吸收助焊劑清洗劑而造成的過度的溶脹變形得到抑制,更易於保持形狀與晶片相同的保護膜的形狀。此外,藉由將丙烯酸樹脂的玻璃化轉變溫度的上限值設為上述值,保護膜形成膜的黏性適度提高,同時保護膜形成膜對工件的黏著力得到,保護膜對工件的黏合力適度提高。The glass transition temperature of the acrylic resin is preferably -70°C to 40°C, -35°C to 35°C, -20°C to 30°C, -10°C to 25°C, and -5°C to 20°C. By setting the lower limit of the glass transition temperature of the acrylic resin to the above value, excessive swelling and deformation of the protective film due to absorption of the flux cleaning agent is suppressed, and it becomes easier to maintain the shape of the protective film having the same shape as the chip. In addition, by setting the upper limit value of the glass transition temperature of the acrylic resin to the above value, the viscosity of the protective film-forming film is moderately improved, and the adhesive force of the protective film-forming film to the workpiece is improved, and the adhesive force of the protective film to the workpiece is improved. Moderate increase.

當丙烯酸樹脂具有m種(m為2以上的整數)結構單元時,能夠藉由以下方式計算出該丙烯酸樹脂的玻璃化轉變溫度。即,分別對衍生出丙烯酸樹脂中的結構單元的m種單體依次賦予1至m的任一不重複的序號而將其命名為“單體m”時,能夠使用以下所示的Fox公式計算出丙烯酸樹脂的玻璃化轉變溫度(Tg)。 [數學式1]

Figure 02_image001
式中,Tg為丙烯酸樹脂的玻璃化轉變溫度;m為2以上的整數;Tg k為單體m的均聚物的玻璃化轉變溫度;W k為丙烯酸樹脂中的衍生自單體m的結構單元m的質量分數,其中,W k滿足下式。 [數學式2]
Figure 02_image003
式中,m及W k與所述m及W k相同。 When the acrylic resin has m types (m is an integer greater than or equal to 2) of structural units, the glass transition temperature of the acrylic resin can be calculated in the following manner. That is, when the m types of monomers derived from the structural units in the acrylic resin are sequentially assigned any non-repeating serial number from 1 to m and named as "monomer m", it can be calculated using the Fox formula shown below The glass transition temperature (Tg) of the acrylic resin. [mathematical formula 1]
Figure 02_image001
In the formula, Tg is the glass transition temperature of the acrylic resin; m is an integer above 2; Tg k is the glass transition temperature of the homopolymer of the monomer m; W k is the structure derived from the monomer m in the acrylic resin The mass fraction of unit m, where W k satisfies the following formula. [mathematical formula 2]
Figure 02_image003
In the formula, m and W k are the same as the aforementioned m and W k .

作為Tg k,可使用高分子資料手冊、黏著手冊或聚合物手冊(Polymer Handbook)等中所記載的值。例如,丙烯酸甲酯的均聚物的Tg k為10℃、丙烯酸正丁酯的均聚物的Tg k為-54℃、甲基丙烯酸甲酯的均聚物的Tg k為105℃、丙烯酸-2-羥基乙酯的均聚物的Tg k為-15℃、甲基丙烯酸縮水甘油酯的均聚物的Tg k為41℃、丙烯酸-2-乙基己酯的均聚物的Tg k為-70℃。 As Tg k , a value described in a polymer data handbook, an adhesive handbook, or a polymer handbook (Polymer Handbook), etc. can be used. For example, the Tg k of the homopolymer of methyl acrylate is 10°C, the Tg k of the homopolymer of n-butyl acrylate is -54°C, the Tg k of the homopolymer of methyl methacrylate is 105°C, and the Tg k of the homopolymer of acrylic acid- The Tg k of the homopolymer of 2-hydroxyethyl ester is -15°C, the Tg k of the homopolymer of glycidyl methacrylate is 41°C, and the Tg k of the homopolymer of 2-ethylhexyl acrylate is -70°C.

將保護膜形成膜用組合物的總重量設為100質量份時的聚合物成分的含量優選為5~80質量份、8~70質量份、10~60質量份、12~55質量份、14~50質量份、15~45質量份。藉由使聚合物成分的含量在上述範圍內,保護膜吸收助焊劑清洗劑而造成的過度的溶脹變形得到抑制,更易於保持形狀與晶片相同的保護膜的形狀。此外,易於控制保護膜形成膜的黏著性。The content of the polymer component when the total weight of the composition for forming a protective film is 100 parts by mass is preferably 5 to 80 parts by mass, 8 to 70 parts by mass, 10 to 60 parts by mass, 12 to 55 parts by mass, 14 parts by mass, ~50 parts by mass, 15~45 parts by mass. When the content of the polymer component is within the above range, excessive swelling and deformation of the protective film due to absorption of the flux cleaning agent is suppressed, and it becomes easier to maintain the shape of the protective film having the same shape as the wafer. In addition, it is easy to control the tackiness of the protective film forming film.

(1.6.2 熱固性成分) 固化性成分(B)藉由使保護膜形成膜固化從而形成硬質的保護膜。作為固化性成分,能夠使用熱固性成分、能量射線固化性成分或這些成分的混合物。當藉由照射能量射線而進行固化時,本實施方案的保護膜形成膜的透光率因含有後述的填充材料及著色劑等而下降。因此,例如當保護膜形成膜的厚度變厚時,能量射線固化容易變得不充分。 (1.6.2 Thermosetting components) The curable component (B) forms a hard protective film by curing a protective film forming film. As the curable component, a thermosetting component, an energy ray-curable component, or a mixture of these components can be used. When curing is performed by irradiating energy rays, the light transmittance of the protective film-forming film according to this embodiment decreases due to the inclusion of a filler, a colorant, and the like described later. Therefore, for example, when the thickness of the protective film forming film becomes thicker, energy ray curing tends to become insufficient.

另一方面,熱固性的保護膜形成膜即使其厚度變厚,也可藉由加熱而充分固化,因此能夠形成保護性能高的保護膜。此外,能夠藉由使用加熱爐等通常的加熱工具而將多個保護膜形成膜一併加熱,從而使其熱固化。On the other hand, even if the thickness of a thermosetting protective film-forming film becomes thick, it can fully harden by heating, Therefore The protective film with high protective performance can be formed. In addition, a plurality of protective film forming films can be collectively heated and thermally cured using common heating tools such as a heating furnace.

因此,在本實施方案中,優選固化性成分為熱固性。即,本實施方案的保護膜形成膜優選為熱固性。Therefore, in the present embodiment, it is preferable that the curable component is thermosetting. That is, the protective film-forming film of the present embodiment is preferably thermosetting.

可藉由以下方法判斷保護膜形成膜是否為熱固性。首先,將常溫(23℃)的保護膜形成膜加熱至大於常溫的溫度,接著冷卻至常溫,從而製成加熱·冷卻後的保護膜形成膜。接著,在相同溫度下對加熱·冷卻後的保護膜形成膜的硬度與加熱前的保護膜形成膜的硬度進行比較,此時在加熱·冷卻後的保護膜形成膜更硬的情況下,判斷該保護膜形成膜為熱固性。Whether or not the protective film forming film is thermosetting can be judged by the following method. First, a protective film forming film at normal temperature (23° C.) was heated to a temperature higher than normal temperature, and then cooled to normal temperature to prepare a heated and cooled protective film forming film. Next, at the same temperature, the hardness of the protective film forming film after heating and cooling is compared with the hardness of the protective film forming film before heating. At this time, when the protective film forming film after heating and cooling is harder, it is judged that This protective film forming film is thermosetting.

作為熱固性成分,例如優選使用環氧樹脂、熱固性聚醯亞胺樹脂、不飽和聚酯樹脂及它們的混合物。另外,熱固性聚醯亞胺樹脂是藉由進行熱固化而形成聚醯亞胺樹脂的、低分子量且低黏性的單體或前驅體聚合物的統稱。熱固性聚醯亞胺樹脂的非限制性的具體實例記載於例如日本纖維學會雜誌“纖維與工業”(繊維學會誌「繊維と工業」), Vol.50, No.3 (1994), P106-P118中。As the thermosetting component, for example, epoxy resins, thermosetting polyimide resins, unsaturated polyester resins, and mixtures thereof are preferably used. In addition, the thermosetting polyimide resin is a generic term for low molecular weight and low viscosity monomers or precursor polymers that form polyimide resins by thermal curing. Non-limiting specific examples of thermosetting polyimide resins are described in, for example, the Journal of the Textile Society of Japan "Fiber and Industry" (Journal of the Japan Textile Society "繊维と工业"), Vol.50, No.3 (1994), P106-P118 middle.

作為熱固性成分的環氧樹脂具有受熱時發生三維網狀化從而形成牢固的覆膜的性質。作為這樣的環氧樹脂,可使用公知的各種環氧樹脂。在本實施方案中,環氧樹脂的分子量(式量)優選為300以上且小於50000、300以上且小於10000、300以上且小於5000、300以上且小於3000。此外,環氧樹脂的環氧當量優選為50~5000g/eq,更優選為100~2000g/eq,進一步優選為150~1000g/eq。Epoxy resin, which is a thermosetting component, has the property of forming a three-dimensional network when heated to form a strong coating. As such an epoxy resin, various well-known epoxy resins can be used. In this embodiment, the molecular weight (formula weight) of the epoxy resin is preferably 300 to less than 50,000, 300 to less than 10,000, 300 to less than 5,000, and 300 to less than 3,000. In addition, the epoxy equivalent of the epoxy resin is preferably 50 to 5000 g/eq, more preferably 100 to 2000 g/eq, and still more preferably 150 to 1000 g/eq.

作為這樣的環氧樹脂,具體而言,可列舉出雙酚A、雙酚F、間苯二酚、苯基酚醛清漆、甲酚酚醛清漆等酚類的縮水甘油醚;丁二醇、聚乙二醇、聚丙二醇等醇類的縮水甘油醚;鄰苯二甲酸、間苯二甲酸、四氫鄰苯二甲酸等羧酸的縮水甘油醚;用縮水甘油基取代苯胺異氰脲酸酯等的與氮原子鍵合的活性氫而成的縮水甘油基型或烷基縮水甘油基型的環氧樹脂;如二氧化乙烯基環己烯、3,4-環氧環己基甲基-3,4-二環己烷羧酸酯、2-(3,4-環氧)環己基-5,5-螺(3,4-環氧)環己烷-間二氧六環等那樣,藉由例如將分子內的碳碳雙鍵氧化而引入了環氧基的所謂的脂環型環氧化物。除此以外,還可以使用具有聯苯骨架、雙環己二烯骨架、萘骨架等的環氧樹脂。Specific examples of such epoxy resins include glycidyl ethers of phenols such as bisphenol A, bisphenol F, resorcinol, phenyl novolac, and cresol novolak; Glycidyl ethers of alcohols such as diol and polypropylene glycol; glycidyl ethers of carboxylic acids such as phthalic acid, isophthalic acid, and tetrahydrophthalic acid; glycidyl substituted aniline isocyanurate, etc. Epoxy resins of the glycidyl or alkyl glycidyl type with active hydrogen bonded to nitrogen atoms; such as vinyl dioxide cyclohexene, 3,4-epoxycyclohexylmethyl-3,4 -dicyclohexanecarboxylate, 2-(3,4-epoxy)cyclohexyl-5,5-spiro(3,4-epoxy)cyclohexane-dioxane, etc., by, for example, A so-called alicyclic epoxide in which an epoxy group is introduced by oxidizing the carbon-carbon double bond in the molecule. In addition, epoxy resins having a biphenyl skeleton, a bicyclohexadiene skeleton, a naphthalene skeleton, and the like can also be used.

當使用熱固性成分作為固化性成分(B)時,優選同時使用作為助劑的固化劑(C)。作為針對環氧樹脂的固化劑,優選熱活性型潛伏性環氧樹脂固化劑。“熱活性型潛伏性環氧樹脂固化劑”是指,在常溫(23℃)下不易與環氧樹脂反應、藉由加熱至某溫度以上而活化從而與環氧樹脂反應的類型的固化劑。熱活性型潛伏性環氧樹脂固化劑的活化方法有:藉由基於加熱的化學反應而產生活性物質(陰離子、陽離子)的方法;在常溫左右穩定地分散於環氧樹脂中而在高溫下與環氧樹脂相容·溶解,從而引發固化反應的方法;利用分子篩密封型的固化劑在高溫下進行洗脫而引發固化反應的方法;利用微膠囊的方法等。When a thermosetting component is used as the curable component (B), it is preferable to use a curing agent (C) as an auxiliary agent together. As the curing agent for the epoxy resin, a thermally active latent epoxy resin curing agent is preferable. "Heat-activated latent epoxy resin curing agent" refers to a type of curing agent that does not easily react with epoxy resin at normal temperature (23° C.) and is activated by heating above a certain temperature to react with epoxy resin. The activation methods of thermally active latent epoxy resin curing agents include: the method of generating active substances (anions, cations) through a chemical reaction based on heating; Epoxy resins are compatible and dissolved, thereby initiating a curing reaction; a method of eluting a molecular sieve-sealed curing agent at a high temperature to initiate a curing reaction; a method of using microcapsules, etc.

在所例示的方法中,優選在常溫左右穩定地分散於環氧樹脂中而在高溫下與環氧樹脂相容·溶解從而引發固化反應的方法。Among the exemplified methods, it is preferable to stably disperse in the epoxy resin at about room temperature, and to be compatible and dissolved with the epoxy resin at high temperature to initiate a curing reaction.

作為熱活性型潛伏性環氧樹脂固化劑的具體實例,可列舉出各種鎓鹽、二元酸二醯肼化合物、二氰二胺、胺加合物(amine adduct)固化劑、咪唑化合物等高熔點活性氫化合物等。這些熱活性型潛伏性環氧樹脂固化劑可以單獨使用一種,或者也可以組合使用兩種以上。在本實施方案中,特別優選二氰二胺。Specific examples of heat-activated latent epoxy resin curing agents include various onium salts, dibasic acid dihydrazide compounds, dicyandiamide, amine adduct (amine adduct) curing agents, imidazole compounds, etc. Melting point active hydrogen compounds, etc. These thermoactive latent epoxy resin curing agents may be used alone or in combination of two or more. In this embodiment, dicyandiamine is particularly preferred.

此外,作為針對環氧樹脂的固化劑,還優選酚醛樹脂。作為酚醛樹脂,可無特別限制地使用烷基酚、多元酚、萘酚等酚類與醛類的縮合物等。具體而言,可以使用苯酚酚醛清漆樹脂、鄰甲酚酚醛清漆樹脂、對甲酚酚醛清漆樹脂、叔丁基苯酚酚醛清漆樹脂、雙環戊二烯甲酚樹脂、聚對乙烯基苯酚樹脂、雙酚A型酚醛清漆樹脂或它們的改性物等。In addition, as a curing agent for epoxy resins, phenolic resins are also preferable. As the phenolic resin, condensates of phenols such as alkylphenols, polyhydric phenols, and naphthols and aldehydes can be used without particular limitation. Specifically, phenol novolak resins, o-cresol novolac resins, p-cresol novolak resins, tert-butylphenol novolac resins, dicyclopentadiene cresol resins, poly-p-vinylphenol resins, bisphenol Type A novolak resins or their modified products, etc.

這些酚醛樹脂中所含的酚羥基易於藉由加熱而與上述環氧樹脂的環氧基進行加成反應,從而能夠形成抗衝擊性高的固化物。The phenolic hydroxyl group contained in these phenolic resins is easy to add reaction with the epoxy group of the said epoxy resin by heating, and can form the hardened|cured material with high impact resistance.

相對於100質量份的環氧樹脂,固化劑(C)的含量優選為0.01~30質量份、0.1~20質量份、0.2~15質量份、0.3~10質量份。藉由將固化劑(C)的含量設為上述的下限值以上,保護膜的網狀結構變得緻密,因此易於獲得作為保護膜的保護工件的性能。此外,藉由將固化劑(C)的含量設為上述的上限值以下,保護膜適度地吸收助焊劑清洗劑,故而能夠進一步抑制助焊劑清洗劑中所含的溶劑滲入到保護膜與晶片之間的介面處。The content of the curing agent (C) is preferably 0.01 to 30 parts by mass, 0.1 to 20 parts by mass, 0.2 to 15 parts by mass, or 0.3 to 10 parts by mass relative to 100 parts by mass of the epoxy resin. Since the network structure of a protective film becomes dense by making content of a hardening|curing agent (C) more than the said lower limit, it becomes easy to acquire the performance which protects a workpiece|work as a protective film. In addition, by making the content of the curing agent (C) below the above-mentioned upper limit, the protective film absorbs the flux cleaning agent moderately, so it is possible to further suppress penetration of the solvent contained in the flux cleaning agent into the protective film and the wafer. at the interface between.

使用二氰二胺作為固化劑(C)時,優選進一步同時使用固化促進劑(D)。作為固化促進劑,例如優選2-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、2-苯基-4,5-二羥基甲基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑等咪唑類(一個以上的氫原子被除氫原子以外的基團取代的咪唑)。其中,特別優選2-苯基-4,5-二羥基甲基咪唑。When dicyandiamine is used as the curing agent (C), it is preferable to further use a curing accelerator (D) together. As curing accelerators, for example, 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl- Imidazoles such as 4-methyl-5-hydroxymethylimidazole (imidazoles in which one or more hydrogen atoms are replaced by groups other than hydrogen atoms). Among them, 2-phenyl-4,5-dihydroxymethylimidazole is particularly preferable.

相對於100質量份的環氧樹脂,固化促進劑的含量優選為0.01~30質量份、0.1~20質量份、0.2~15質量份、0.3~10質量份。藉由將固化促進劑(D)的含量設為上述的下限值以上,保護膜的網狀結構變得緻密,因此易於獲得作為保護膜的保護工件的性能。此外,藉由將固化促進劑(D)的含量設為上述的上限值以下,保護膜適度地吸收助焊劑清洗劑,故而能夠進一步抑制助焊劑清洗劑中所含的溶劑滲入到保護膜與晶片之間的介面處。The content of the curing accelerator is preferably 0.01 to 30 parts by mass, 0.1 to 20 parts by mass, 0.2 to 15 parts by mass, or 0.3 to 10 parts by mass relative to 100 parts by mass of the epoxy resin. Since the network structure of a protective film becomes dense by making content of a hardening accelerator (D) more than the said lower limit, it becomes easy to acquire the performance which protects a workpiece|work as a protective film. Moreover, since the protective film absorbs a flux cleaning agent moderately by making content of a hardening accelerator (D) into below the said upper limit, penetration of the solvent contained in a flux cleaning agent into a protective film and a flux cleaning agent can be suppressed further. interface between chips.

將保護膜形成膜用組合物的總重量設為100質量份時的熱固性成分及固化劑的合計含量,優選為3~80質量份、5~60質量份、7~50質量份、9~40質量份、10~30質量份。藉由將熱固性成分及固化劑的合計含量設為上述的下限值以上,能夠在固化前表現出適度的黏性且可穩定地進行貼附操作。此外,固化後,易於獲得作為保護膜的保護工件的性能。藉由將熱固性成分及固化劑的合計含量設為上述的上限值以下而調整固化度,由此保護膜適度地吸收助焊劑清洗劑,故而能夠進一步抑制助焊劑清洗劑中所含的溶劑滲入到保護膜與晶片之間的介面處。The total content of the thermosetting component and the curing agent when the total weight of the composition for forming a protective film is 100 parts by mass is preferably 3 to 80 parts by mass, 5 to 60 parts by mass, 7 to 50 parts by mass, or 9 to 40 parts by mass. parts by mass, 10 to 30 parts by mass. By making the total content of a thermosetting component and a hardening|curing agent more than the said lower limit, moderate viscosity can be expressed before hardening, and sticking operation can be performed stably. In addition, after curing, it is easy to obtain the performance of protecting workpieces as a protective film. By adjusting the degree of curing by setting the total content of the thermosetting component and the curing agent to be equal to or less than the above-mentioned upper limit, the protective film absorbs the flux-removing agent appropriately, so that the infiltration of the solvent contained in the flux-removing agent can be further suppressed to the interface between the protective film and the wafer.

(1.6.3 能量射線固化性成分) 當固化性成分(B)為能量射線固化性成分時,能量射線固化性成分優選未固化,優選具有黏著性,更優選未固化且具有黏著性。 (1.6.3 Energy ray curable components) When the curable component (B) is an energy ray curable component, the energy ray curable component is preferably uncured, preferably has adhesiveness, more preferably is uncured and has adhesiveness.

能量射線固化性成分是藉由照射能量射線而固化的成分,也是用於對保護膜形成膜賦予成膜性或柔性等的成分。The energy ray-curable component is a component that is cured by irradiating an energy ray, and is also a component for imparting film-forming properties, flexibility, and the like to a protective film-forming film.

作為能量射線固化性成分,例如優選具有能量射線固化性基團的化合物。作為這種化合物,可列舉出公知的具有能量射線固化性基團的化合物。As the energy ray curable component, for example, a compound having an energy ray curable group is preferable. As such a compound, the compound which has a well-known energy-ray curable group is mentioned.

(1.6.4 填充材料) 藉由使保護膜形成膜含有填充材料(E),變得易於調整將保護膜形成膜製成保護膜而得到的保護膜的熱膨脹係數,藉由使該熱膨脹係數接近於工件的熱膨脹係數,使用保護膜形成膜而得到的帶保護膜的晶片的黏合可靠性進一步得以提高。此外,藉由使保護膜形成膜含有填充材料(E),可得到硬質的保護膜,能夠進一步降低保護膜的吸濕率,帶保護膜的晶片的黏合可靠性會進一步得以提高。 (1.6.4 Filling material) By making the protective film forming film contain the filler (E), it becomes easy to adjust the thermal expansion coefficient of the protective film obtained by making the protective film forming film into a protective film, and by making the thermal expansion coefficient close to the thermal expansion coefficient of the workpiece, use The bonding reliability of the wafer with a protective film obtained by forming a protective film is further improved. In addition, by making the protective film forming film contain the filler (E), a hard protective film can be obtained, the moisture absorption rate of the protective film can be further reduced, and the adhesion reliability of the wafer with the protective film can be further improved.

填充材料(E)可以為有機填充材料及無機填充材料中的任一種,但從高溫下的形狀穩定性的角度出發,優選為無機填充材料。The filler (E) may be either an organic filler or an inorganic filler, but is preferably an inorganic filler from the viewpoint of shape stability at high temperature.

作為優選的無機填充材料,例如可列舉出二氧化矽、氧化鋁、滑石、碳酸鈣、紅氧化鐵、碳化矽、氮化硼等的粉末;將這些無機填充材料球形化而成的珠子;這些無機填充材料的表面改性物;這些無機填充材料的單晶纖維;玻璃纖維等。其中,優選二氧化矽及進行了表面改性的二氧化矽。As preferred inorganic fillers, for example, powders of silica, alumina, talc, calcium carbonate, red iron oxide, silicon carbide, boron nitride, etc.; beads obtained by spheroidizing these inorganic fillers; these Surface modification of inorganic filler materials; single crystal fibers of these inorganic filler materials; glass fibers, etc. Among them, silicon dioxide and surface-modified silicon dioxide are preferable.

在本實施方案中,從在後述的塗佈劑中的分散性的角度出發,優選進行了表面改性的二氧化矽,且優選以降低與2-氨基乙醇的反應性的方式進行了表面改性的二氧化矽。具體而言,優選利用極性低的官能團進行表面改性,優選以乙烯基進行修飾。藉由使用這樣的進行了表面改性的二氧化矽,能夠在保持其在塗佈劑中的分散性的同時在保護膜中適度地應用二氧化矽填充材料的顆粒彼此間所具有的內聚性,由此存在浸漬於2-氨基乙醇後的保護膜與矽晶片之間的介面的剪切強度得以提高的傾向。In this embodiment, from the viewpoint of dispersibility in a coating agent described later, surface-modified silica is preferable, and the surface-modified silica is preferably modified so as to reduce reactivity with 2-aminoethanol. Sexual silica. Specifically, surface modification with a low-polarity functional group is preferable, and modification with a vinyl group is preferable. By using such surface-modified silica, it is possible to appropriately apply the cohesion between the particles of the silica filler in the protective film while maintaining its dispersibility in the coating agent. Therefore, there is a tendency that the shear strength of the interface between the protective film dipped in 2-aminoethanol and the silicon wafer is improved.

在本實施方案中,優選填充材料的平均粒徑較小。具體而言,填充材料的平均粒徑優選為0.02以上且小於1μm、0.05以上且小於0.5μm、0.10以上且小於0.4μm。In this embodiment, it is preferred that the average particle size of the filler material is small. Specifically, the average particle diameter of the filler is preferably 0.02 to less than 1 μm, 0.05 to less than 0.5 μm, and 0.10 to less than 0.4 μm.

藉由將填充材料的平均粒徑設為上述的值,能夠提高藉由使用以特定的官能團進行了表面改性的二氧化矽而得到的效果。By setting the average particle diameter of the filler to the above value, the effect obtained by using silica surface-modified with a specific functional group can be enhanced.

另外,在本說明書中,只要沒有特別說明,則“平均粒徑”是指,藉由雷射繞射散射法而求出的細微性分佈曲線中的累計值為50%時的粒徑(D50)的值。In addition, in this specification, unless otherwise specified, the "average particle diameter" refers to the particle diameter (D50 ) value.

將保護膜形成膜用組合物的總重量設為100質量份時的填充材料的含量優選為15~80質量份、30~75質量份、40~70質量份、45~65質量份。The content of the filler when the total weight of the composition for forming a protective film is 100 parts by mass is preferably 15 to 80 parts by mass, 30 to 75 parts by mass, 40 to 70 parts by mass, and 45 to 65 parts by mass.

藉由將填充材料的含量的下限值設為上述的值,能夠進一步發揮藉由含有填充材料而帶來的上述效果。此外,藉由將填充材料的含量的上限值設為上述的值,保護膜形成膜與工件之間的黏著力得以進一步提高。By making the lower limit of content of a filler into the said value, the said effect by containing a filler can be exhibited further. Moreover, the adhesive force between a protective film forming film and a workpiece|work can be improved more by making the upper limit of content of a filler into the said value.

(1.6.5 偶聯劑) 藉由使保護膜形成膜含有偶聯劑,在保護膜形成膜固化後,能夠在不損傷保護膜的耐熱性的情況下,提高保護膜與工件之間的黏合性,同時還能夠提高耐水性(耐濕熱性)。作為偶聯劑,從其廣泛的應用性與成本優勢的角度出發,優選矽烷偶聯劑。 (1.6.5 Coupling agent) By making the protective film-forming film contain a coupling agent, after the protective film-forming film is cured, the adhesion between the protective film and the workpiece can be improved without impairing the heat resistance of the protective film, and at the same time, the water resistance can be improved (moisture and heat resistance). As the coupling agent, silane coupling agent is preferred in view of its wide applicability and cost advantage.

在本實施方案中,優選具有作為反應性官能團的下述基團的矽烷偶聯劑,所述基團為:甲基、乙基等烷基;甲氧基、乙氧基等烷氧基;環氧基等縮水甘油醚氧基;氨基;(甲基)丙烯醯氧基等乙烯基;巰基等,優選具有烷基與烷氧基的矽烷偶聯劑。In this embodiment, silane coupling agents having the following groups as reactive functional groups are preferred, and the groups are: alkyl groups such as methyl and ethyl; alkoxy groups such as methoxy and ethoxy; Glycidyloxy groups such as epoxy groups; amino groups; vinyl groups such as (meth)acryloxy groups; mercapto groups, etc., preferably silane coupling agents having alkyl and alkoxy groups.

此外,作為矽烷偶聯劑,較之分子量小於300的低分子量矽烷偶聯劑,更優選分子量為300以上的低聚物型矽烷偶聯劑。藉由使偶聯劑為低聚物型矽烷偶聯劑,存在能夠比較牢固地發揮矽等與保護膜形成膜之間的化學鍵的傾向。In addition, as the silane coupling agent, an oligomer type silane coupling agent having a molecular weight of 300 or more is more preferable than a low molecular weight silane coupling agent having a molecular weight of less than 300. When the coupling agent is an oligomer type silane coupling agent, there exists a tendency for the chemical bond between silicon etc. and a protective film formation film to be exhibited comparatively firmly.

作為具體的矽烷偶聯劑,能夠使用分子內具有多個烷氧基甲矽烷基的矽烷偶聯劑(低聚物型矽烷偶聯劑)。例如可列舉出Shin-Etsu Chemical Co., Ltd.製造的含環氧基的低聚物型矽烷偶聯劑,商品名稱“X-41-1053”、“X-41-1059A”、“X-41-1056”、“X-40-2651”;含巰基的低聚物型矽烷偶聯劑“X-41-1818”、“X-41-1810”、“X-41-1805”等。這些矽烷偶聯劑能夠單獨使用一種,或者也可以混合使用兩種以上。此外,藉由同時使用上述的填充材料與上述的矽烷偶聯劑,存在浸漬於2-氨基乙醇後的保護膜與矽晶片之間的介面的剪切強度得以提高的傾向。As a specific silane coupling agent, a silane coupling agent (oligomer type silane coupling agent) having a plurality of alkoxysilyl groups in the molecule can be used. For example, epoxy group-containing oligomer type silane coupling agents manufactured by Shin-Etsu Chemical Co., Ltd., trade names "X-41-1053", "X-41-1059A", "X- 41-1056", "X-40-2651"; mercapto-containing oligomer silane coupling agents "X-41-1818", "X-41-1810", "X-41-1805", etc. These silane coupling agents can be used alone or in combination of two or more. Moreover, there exists a tendency for the shear strength of the interface between the protective film after dipping in 2-aminoethanol and a silicon wafer to improve by using the said filler and the said silane coupling agent together.

將保護膜形成膜用組合物的總重量設為100質量份時的偶聯劑的含量優選為0.01~20質量份、0.1~10質量份、0.2~5質量份、0.3~3質量份。The content of the coupling agent when the total weight of the composition for forming a protective film is 100 parts by mass is preferably 0.01 to 20 parts by mass, 0.1 to 10 parts by mass, 0.2 to 5 parts by mass, or 0.3 to 3 parts by mass.

(1.6.6 著色劑) 保護膜形成膜優選含有著色劑(G)。由此,由於晶片等工件的加工物的背面被遮蓋,因此能夠遮罩電子設備內產生的各種電磁波,從而能夠減少晶片等工件的加工物的故障。 (1.6.6 Colorants) It is preferable that a protective film forming film contains a coloring agent (G). In this way, since the back surface of the workpiece such as a wafer is covered, various electromagnetic waves generated in the electronic device can be shielded, and failures of the workpiece such as a wafer can be reduced.

作為著色劑(G),例如能夠使用有機類顏料、有機類染料、無機類顏料等公知的著色劑。As the colorant (G), known colorants such as organic pigments, organic dyes, and inorganic pigments can be used, for example.

作為有機類顏料及有機類染料,例如可列舉出胺鎓(aminium)類色素、花青類色素、部花青類色素、克酮酸(croconium)類色素、方酸菁(squarylium)類色素、甘菊藍鎓(azulenium)類色素、聚甲炔類色素、萘醌類色素、吡喃鎓類色素、酞菁類色素、萘菁類色素、萘內醯亞胺(naphtholactam)類色素、偶氮類色素、縮合偶氮類色素、靛藍類色素、紫環酮(perinone)類色素、苝類色素、二噁嗪類色素、喹吖啶酮類色素、異吲哚啉酮類色素、喹酞酮類色素、吡咯類色素、硫靛類色素、金屬絡合物類色素(金屬絡合鹽染料)、二硫醇金屬絡合物類色素、吲哚酚類色素、三芳基甲烷類色素、蒽醌類色素、二噁嗪類色素、萘酚類色素、甲亞胺類色素、苯並咪唑酮類色素、皮蒽酮類色素及士林(threne)類色素等。有機類著色劑可以由一種材料構成,也可以由多種材料構成。Examples of organic pigments and organic dyes include aminium dyes, cyanine dyes, merocyanine dyes, croconium dyes, squarylium dyes, Azulenium pigments, polymethine pigments, naphthoquinone pigments, pyrylium pigments, phthalocyanine pigments, naphthalocyanine pigments, naphthalactam pigments, azo Pigments, condensed azo pigments, indigo pigments, perinone pigments, perylene pigments, dioxazine pigments, quinacridone pigments, isoindolinone pigments, quinophthalone Pigments, pyrrole pigments, thioindigo pigments, metal complex pigments (metal complex salt dyes), dithiol metal complex pigments, indoxyl phenol pigments, triarylmethane pigments, anthraquinone pigments, dioxazine pigments, naphthol pigments, imine pigments, benzimidazolone pigments, pyranthrone pigments and threne pigments, etc. The organic colorant may be composed of one material or may be composed of a plurality of materials.

作為無機類顏料,例如可列舉出炭黑、鈷類色素、鐵類色素、鉻類色素、鈦類色素、釩類色素、鋯類色素、鉬類色素、釕類色素、鉑類色素、ITO(氧化銦錫)類色素、ATO(氧化銻錫)類色素等。其中,特別優選使用炭黑。Examples of inorganic pigments include carbon black, cobalt-based pigments, iron-based pigments, chromium-based pigments, titanium-based pigments, vanadium-based pigments, zirconium-based pigments, molybdenum-based pigments, ruthenium-based pigments, platinum-based pigments, ITO ( Indium tin oxide) pigments, ATO (antimony tin oxide) pigments, etc. Among them, carbon black is particularly preferably used.

保護膜形成膜中的著色劑的摻合量因保護膜形成膜的厚度而異,例如保護膜形成膜的厚度為40μm時,將保護膜形成膜用組合物的總重量設為100質量份時的著色劑的含量優選為0.01~10質量份、0.03~7質量份、0.05~4質量份。The blending amount of the coloring agent in the protective film-forming film varies depending on the thickness of the protective film-forming film. For example, when the thickness of the protective film-forming film is 40 μm, when the total weight of the protective film-forming composition is 100 parts by mass The content of the coloring agent is preferably 0.01 to 10 parts by mass, 0.03 to 7 parts by mass, or 0.05 to 4 parts by mass.

著色劑的平均粒徑優選為1~500nm、3~100nm、5~50nm。若著色劑的平均粒徑在上述範圍內,則易於將透光率控制在所需的範圍內。The average particle diameter of the coloring agent is preferably 1 to 500 nm, 3 to 100 nm, or 5 to 50 nm. When the average particle diameter of the coloring agent is within the above-mentioned range, it is easy to control the light transmittance within the desired range.

(1.6.7 其他添加劑) 在不損害本發明的效果的範圍內,保護膜形成膜用組合物可以含有作為其他添加劑的例如光聚合引發劑、交聯劑、增塑劑、抗靜電劑、抗氧化劑、吸雜劑、增黏劑、剝離劑等。 (1.6.7 Other additives) The protective film-forming film composition may contain, as other additives, photopolymerization initiators, crosslinking agents, plasticizers, antistatic agents, antioxidants, gettering agents, Adhesives, strippers, etc.

(2. 保護膜形成用片) 本實施方案的保護膜形成用片具有上述的保護膜形成膜與配置在保護膜形成膜的至少一個主面上的剝離膜。剝離膜在使用保護膜形成膜時剝離。 (2. Sheet for protective film formation) The sheet for protective film formation of this embodiment has the above-mentioned protective film formation film and the peeling film arrange|positioned on at least one main surface of a protection film formation film. The release film is peeled when forming a film using a protective film.

圖2A所示的保護膜形成用片51具有如下構成,即,在保護膜形成膜10的一個主面10a上配置了支撐保護膜形成膜10的第一剝離膜21,在另一個主面10b上配置了第二剝離膜22的構成。The sheet 51 for forming a protective film shown in FIG. 2A has a structure in which a first release film 21 supporting the protective film forming film 10 is disposed on one principal surface 10a of the protective film forming film 10, and a first release film 21 is disposed on the other principal surface 10b. The second peeling film 22 is arranged on the structure.

另一方面,圖2B所示的保護膜形成用片52具有如下構成,即,在保護膜形成膜10的一個主面10a上配置了支撐保護膜形成膜10的第一剝離膜21,在另一個主面10b上未配置剝離膜的構成。On the other hand, the sheet 52 for forming a protective film shown in FIG. 2B has a structure in which a first release film 21 supporting the protective film forming film 10 is disposed on one main surface 10a of the protective film forming film 10, and on the other side A structure in which a release film is not disposed on one main surface 10b.

本實施方案的保護膜形成用片在加工工件時用於將保護膜形成膜貼附於該工件,並且藉由將保護膜形成膜製成保護膜從而用於在該工件或該工件的加工物上形成保護膜。The sheet for forming a protective film of this embodiment is used for attaching a protective film forming film to the workpiece when processing a workpiece, and is used on the workpiece or the processed object of the workpiece by making the protective film forming film into a protective film. form a protective film.

此外,保護膜形成用片可以為長邊方向的長度較之短邊方向的長度非常長的長條狀片的形態。此外,也可以為捲繞這樣的長條狀片而成的片卷的形態。Moreover, the sheet|seat for protective film formation may be the form of the elongated sheet whose length in the longitudinal direction is very long compared with the length in the short direction. In addition, it may be in the form of a sheet roll in which such a long sheet is wound.

進一步,保護膜形成用片也可以為以具有特定的閉合形狀的方式對應貼附於工件的保護膜形成膜進行了沖切加工的保護膜形成用片。特定的閉合形狀沒有特別限制,但優選為與要貼附的工件大致相同的形狀。Furthermore, the sheet|seat for protective film formation may be the sheet|seat for protective film formation which carried out die-cut processing so that it may have a specific closed shape corresponding to the protective film formation film affixed to a workpiece. The specific closed shape is not particularly limited, but is preferably approximately the same shape as the workpiece to be attached.

(2.1 剝離膜) 剝離膜為以可剝離的方式支撐保護膜形成膜的膜。 剝離膜可以由一層(單層)或兩層以上的基材而構成,從控制剝離性的角度出發,也可以對基材的表面進行剝離處理。即,可以對基材的表面進行改性,也可以在基材的表面形成並非來源於基材的材料(剝離劑層)。 (2.1 Peel-off film) The peeling film is a film that supports the protective film forming film in a peelable manner. The release film may be composed of one layer (single layer) or two or more layers of base material, and the surface of the base material may be subjected to a release treatment from the viewpoint of controlling release properties. That is, the surface of the substrate may be modified, or a material not derived from the substrate (release agent layer) may be formed on the surface of the substrate.

作為基材,只要是能夠支撐保護膜形成膜直至將保護膜形成膜貼附於工件時為止的材料,則沒有特別限定,通常由以樹脂類的材料為主要材料的膜(以下稱作“樹脂膜”)構成。The substrate is not particularly limited as long as it is capable of supporting the protective film-forming film until the protective film-forming film is attached to the workpiece. Generally, it is made of a resin-based film (hereinafter referred to as "resin"). Membrane") composition.

作為樹脂膜的具體實例,可使用聚乙烯膜、聚丙烯膜、聚丁烯膜、聚丁二烯膜、聚甲基戊烯膜、聚氯乙烯膜、氯乙烯共聚物膜、聚對苯二甲酸乙二醇酯膜、聚萘二甲酸乙二醇酯膜、聚對苯二甲酸丁二醇酯膜、聚氨酯膜、乙烯-醋酸乙烯酯共聚物膜、離聚物樹脂膜、乙烯-(甲基)丙烯酸共聚物膜、乙烯-(甲基)丙烯酸酯共聚物膜、聚苯乙烯膜、聚碳酸酯膜、聚醯亞胺膜、氟樹脂膜等。此外也可以使用這些膜的交聯膜。進一步還可以為這些膜的層疊膜。在本實施方案中,從環境安全性、成本等角度出發,優選聚對苯二甲酸乙二醇酯膜。As specific examples of the resin film, polyethylene film, polypropylene film, polybutene film, polybutadiene film, polymethylpentene film, polyvinyl chloride film, vinyl chloride copolymer film, polyterephthalene film, Ethylene formate film, polyethylene naphthalate film, polybutylene terephthalate film, polyurethane film, ethylene-vinyl acetate copolymer film, ionomer resin film, ethylene-(formaldehyde base) acrylic copolymer film, ethylene-(meth)acrylate copolymer film, polystyrene film, polycarbonate film, polyimide film, fluororesin film, etc. In addition, crosslinked films of these films can also be used. Furthermore, a laminated film of these films may also be used. In this embodiment, a polyethylene terephthalate film is preferable from the viewpoints of environmental safety, cost, and the like.

上述的樹脂膜也可以含有著色劑、阻燃劑、增塑劑、抗靜電劑、潤滑劑、填料等各種添加劑。The aforementioned resin film may contain various additives such as coloring agents, flame retardants, plasticizers, antistatic agents, lubricants, and fillers.

剝離劑層可藉由在基材的一個面上塗佈包含剝離劑層用組合物的塗佈劑,然後使該塗膜乾燥及固化而得到。剝離劑層用組合物只要是能夠給基材賦予與保護膜形成膜之間的剝離性的材料,則沒有特別限制。在本實施方案中,剝離劑層用組合物,例如優選醇酸類脫模劑、矽酮類脫模劑、氟類脫模劑、不飽和聚酯類脫模劑、聚烯烴類脫模劑、石蠟類脫模劑,其中,優選矽酮類脫模劑。The release agent layer can be obtained by applying a coating agent containing a composition for a release agent layer on one surface of a substrate, and drying and curing the coating film. The release agent layer composition is not particularly limited as long as it is a material that can impart releasability to the base material and the protective film forming film. In this embodiment, the release agent layer composition is preferably, for example, an alkyd release agent, a silicone release agent, a fluorine release agent, an unsaturated polyester release agent, a polyolefin release agent, Among the paraffin-based release agents, silicone-based release agents are preferred.

剝離膜的厚度沒有特別限制,但優選為15~100μm,進一步優選為25~80μm,更優選為35~60μm。The thickness of the release film is not particularly limited, but is preferably 15 to 100 μm, more preferably 25 to 80 μm, and still more preferably 35 to 60 μm.

另外,當在保護膜形成膜的兩個主面上均形成有剝離膜時,優選增大一個剝離膜的剝離力從而將其設為重剝離型剝離膜,減小另一個剝離膜的剝離力從而將其設為輕剝離型剝離膜。In addition, when peeling films are formed on both main surfaces of the protective film forming film, it is preferable to increase the peeling force of one peeling film to make it a heavy peeling type peeling film, and to reduce the peeling force of the other peeling film so that Make it a light-peeling type release film.

(3. 保護膜形成用複合片) 本實施方案的保護膜形成用複合片具有上述的保護膜形成膜與支撐保護膜形成膜的支撐片。對於支撐片的構成,只要是能夠控制足以得到帶保護膜的工件的加工物的密合性與剝離性,則沒有特別限制。例如,支撐片可以僅由後述的具有特定的剛性的基材構成。在本實施方案中,為了更易於控制密合性與剝離性,優選支撐片為具有基材及黏著劑層的黏著片。 (3. Composite sheet for protective film formation) The composite sheet for protective film formation of this embodiment has the above-mentioned protective film forming film and the support sheet which supports the protective film forming film. The configuration of the support sheet is not particularly limited as long as the adhesiveness and peelability of the workpiece can be controlled enough to obtain a workpiece with a protective film. For example, the support sheet may be composed only of a base material having specific rigidity described later. In this embodiment, in order to control the adhesiveness and peelability more easily, it is preferable that the supporting sheet is an adhesive sheet having a base material and an adhesive layer.

圖3A所示的保護膜形成用複合片61具有以下構成,即其具備:黏著劑層42層疊於基材41的一個面而成的黏著片4、層疊於黏著片4的黏著劑層42側的保護膜形成膜10、層疊於保護膜形成膜10的與黏著片4相反一側的周邊部的夾具用黏著劑層5。另外,夾具用黏著劑層5為用於將保護膜形成用複合片61黏合於環形框架等夾具的層。因此,黏著片為支撐片。The composite sheet 61 for forming a protective film shown in FIG. 3A has a structure including: an adhesive sheet 4 in which an adhesive layer 42 is laminated on one surface of a substrate 41; The protective film forming film 10 and the adhesive layer 5 for jigs laminated on the peripheral portion of the protective film forming film 10 on the side opposite to the adhesive sheet 4 . Moreover, the adhesive agent layer 5 for jigs is a layer for adhering the composite sheet 61 for protective film formation to jig|tools, such as a ring frame. Therefore, the adhesive sheet is a supporting sheet.

此外,圖3B所示的保護膜形成用複合片62具有以下構成,即其具備:黏著劑層42層疊於基材41的一個面而成的黏著片4、與層疊於黏著片4的黏著劑層42側的保護膜形成膜10。Moreover, the composite sheet 62 for protective film formation shown in FIG. The protective film on the layer 42 side forms the film 10 .

本實施方案的保護膜形成用複合片在加工工件時用於貼附於該工件從而支撐該工件,並且藉由將保護膜形成膜製成保護膜從而用於在該工件或該工件的加工物上形成保護膜。The protective film-forming composite sheet of this embodiment is used to be attached to the workpiece to support the workpiece when the workpiece is processed, and to be used on the workpiece or the processed object of the workpiece by forming a protective film-forming film into a protective film. form a protective film.

具體而言,其在對作為工件的晶圓進行切割加工時用於支撐晶圓,並且用於在作為藉由切割而得到的加工物的晶片上形成保護膜,但並非限定於此。Specifically, it is used to support the wafer when the wafer as the workpiece is diced, and to form a protective film on the wafer as the processed product obtained by dicing, but the present invention is not limited thereto.

(3.1 黏著片) 本實施方案的保護膜形成用複合片的黏著片4藉由具備基材41與層疊在基材41的一個面上的黏著劑層42而構成。 (3.1 Adhesive sheet) The adhesive sheet 4 of the composite sheet for protective film formation of this embodiment is comprised by including the base material 41 and the adhesive agent layer 42 laminated|stacked on one surface of the base material 41.

(3.1.1. 基材) 黏著片4的基材41只要是適合進行工件的加工、例如晶圓的切割及擴展(expanding)的基材,則其構成材料沒有特別限定,通常由以樹脂類材料為主要材料的膜(以下稱作“樹脂膜”)構成。 (3.1.1. Substrate) The base material 41 of the adhesive sheet 4 is not particularly limited as long as it is suitable for processing workpieces, such as wafer dicing and expanding (expanding). called "resin film").

作為樹脂膜的具體實例,可列舉出低密度聚乙烯(LDPE)膜、線性低密度聚乙烯(LLDPE)膜、高密度聚乙烯(HDPE)膜等聚乙烯膜、聚丙烯膜、聚丁烯膜、聚丁二烯膜、聚甲基戊烯膜、乙烯-降冰片烯共聚物膜、降冰片烯樹脂膜等聚烯烴類膜;乙烯-醋酸乙烯酯共聚物膜、乙烯-(甲基)丙烯酸共聚物膜、乙烯-(甲基)丙烯酸酯共聚物膜等乙烯類共聚物膜;聚氯乙烯膜、氯乙烯共聚物膜等聚氯乙烯類膜;聚對苯二甲酸乙二醇酯膜、聚對苯二甲酸丁二醇酯膜等聚酯類膜;聚氨酯膜;聚醯亞胺膜;聚苯乙烯膜;聚碳酸酯膜;氟樹脂膜等。此外,也可以使用這些膜的交聯膜、離聚物膜等改性膜。上述的基材41可以是由這些膜中的一種構成的膜,也可以是進一步組合這些膜中的兩種以上而得到的層疊膜。在本實施方案中,從用於對保護膜形成用複合片進行加熱的步驟時的耐熱性的角度出發,優選聚丙烯膜及聚對苯二甲酸丁二醇酯膜。Specific examples of the resin film include polyethylene films such as low-density polyethylene (LDPE) films, linear low-density polyethylene (LLDPE) films, and high-density polyethylene (HDPE) films, polypropylene films, and polybutylene films. , polybutadiene film, polymethylpentene film, ethylene-norbornene copolymer film, norbornene resin film and other polyolefin films; ethylene-vinyl acetate copolymer film, ethylene-(meth)acrylic acid Ethylene-based copolymer films such as copolymer films and ethylene-(meth)acrylate copolymer films; polyvinyl chloride films such as polyvinyl chloride films and vinyl chloride copolymer films; polyethylene terephthalate films, Polyester films such as polybutylene terephthalate films; polyurethane films; polyimide films; polystyrene films; polycarbonate films; fluororesin films, etc. In addition, modified membranes such as crosslinked membranes and ionomer membranes of these membranes can also be used. The aforementioned substrate 41 may be a film composed of one of these films, or may be a laminated film obtained by further combining two or more of these films. In the present embodiment, a polypropylene film and a polybutylene terephthalate film are preferable from the viewpoint of heat resistance when used in the step of heating the composite sheet for protective film formation.

為了提高上述樹脂膜與層疊於其表面的黏著劑層42之間的密合性,可根據需要對上述樹脂膜的一個面或兩面實施基於氧化法或粗糙化法等的表面處理、或者底塗處理(primer treatment)。作為上述氧化法,例如可列舉出電暈放電處理、等離子體放電處理、鉻氧化處理(濕式)、火焰處理、熱風處理、臭氧-紫外線照射處理等;此外,作為粗糙化法,例如可列舉出噴砂法、熱噴處理法等。In order to improve the adhesiveness between the above-mentioned resin film and the adhesive layer 42 laminated on its surface, one or both surfaces of the above-mentioned resin film may be subjected to surface treatment such as oxidation method or roughening method, or primer coating as necessary. Treatment (primer treatment). Examples of the oxidation method include corona discharge treatment, plasma discharge treatment, chromium oxidation treatment (wet method), flame treatment, hot air treatment, ozone-ultraviolet irradiation treatment, etc.; Sandblasting, thermal spraying, etc.

上述樹脂膜也可以含有著色劑、阻燃劑、增塑劑、抗靜電劑、潤滑劑、填料等各種添加劑。The above-mentioned resin film may contain various additives such as a colorant, a flame retardant, a plasticizer, an antistatic agent, a lubricant, and a filler.

對於基材41的厚度,只要能夠在使用保護膜形成用複合片的各步驟中適當地發揮功能,則沒有特別限定。優選為20~200μm,更優選為40~170μm,特別優選為50~140μm的範圍。The thickness of the base material 41 will not be specifically limited if it can function suitably in each process which uses the composite sheet for protective film formation. Preferably it is 20-200 micrometers, More preferably, it is 40-170 micrometers, Especially preferably, it is the range of 50-140 micrometers.

(3.1.2. 黏著劑層) 本實施方案的保護膜形成用複合片的黏著片4所具備的黏著劑層42可以由非能量射線固化性黏著劑構成,也可以由能量射線固化性黏著劑構成。作為非能量射線固化性黏著劑,優選具有所需的黏著力及再剝離性的黏著劑,例如能夠使用丙烯酸類黏著劑、橡膠類黏著劑、矽酮類黏著劑、氨基甲酸酯類黏著劑、聚酯類黏著劑、聚乙烯基醚類黏著劑等。其中,優選與保護膜形成膜10的密合性高且能夠在切割步驟等中有效地抑制工件或工件的加工物的脫落的丙烯酸類黏著劑。此外,從易於控制帶保護膜的工件的加工物的拾取適性的角度出發,也優選丙烯酸類黏著劑。 (3.1.2. Adhesive layer) The adhesive layer 42 included in the adhesive sheet 4 of the protective film forming composite sheet according to this embodiment may be composed of a non-energy ray-curable adhesive or an energy ray-curable adhesive. As the non-energy ray-curable adhesive, an adhesive having required adhesive force and re-peelability is preferable, for example, an acrylic adhesive, a rubber adhesive, a silicone adhesive, a urethane adhesive, Polyester adhesives, polyvinyl ether adhesives, etc. Among them, an acrylic adhesive having high adhesion to the protective film forming film 10 and capable of effectively suppressing the peeling of the workpiece or a processed product of the workpiece in a dicing step or the like is preferable. Moreover, an acrylic adhesive is also preferable from the viewpoint of being easy to control the pick-up suitability of the workpiece of the workpiece|work with a protective film.

另一方面,能量射線固化性黏著劑的黏著力會因能量射線照射而下降,因此在需要使工件或工件的加工物與黏著片4分離時,能夠藉由照射能量射線而將其輕鬆分離。On the other hand, since the adhesive force of the energy ray-curable adhesive is lowered by energy ray irradiation, when it is necessary to separate the workpiece or the processed product of the workpiece from the adhesive sheet 4, it can be easily separated by irradiating the energy ray.

構成黏著劑層42的能量射線固化性黏著劑可以將具有能量射線固化性的聚合物作為主要成分,也可以將不具有能量射線固化性的聚合物與能量射線固化性的單體和/或低聚物的混合物作為主要成分。The energy ray-curable adhesive constituting the adhesive layer 42 may contain an energy-ray-curable polymer as a main component, or may contain a non-energy-ray-curable polymer and an energy-ray-curable monomer and/or a low-energy ray-curable adhesive. A mixture of polymers as the main component.

作為具有能量射線固化性的聚合物,例如,可例示出引入了能量射線固化性基團的(甲基)丙烯酸酯(共聚物)聚合物等。作為能量射線固化性的單體和/或低聚物,可例示出多元醇與(甲基)丙烯酸的酯。此外,除了含有具有能量射線固化性的成分以外,能量射線固化性黏著劑還可以含有光聚合引發劑、交聯劑等添加劑。As a polymer having energy ray curability, for example, a (meth)acrylate (copolymer) polymer into which an energy ray curable group is introduced can be illustrated. Esters of polyols and (meth)acrylic acid can be exemplified as energy ray curable monomers and/or oligomers. In addition, the energy ray-curable adhesive may contain additives such as a photopolymerization initiator and a crosslinking agent in addition to the energy ray-curable component.

只要能夠在使用保護膜形成用複合片3的各步驟中適當地發揮功能,則對黏著劑層42的厚度沒有特別限定。具體而言,黏著劑層的厚度優選為1~50μm、2~30μm、2~20μm、3~10μm、3~8μm。The thickness of the adhesive layer 42 is not specifically limited as long as it can function suitably in each process which uses the composite sheet 3 for protective film formation. Specifically, the thickness of the adhesive layer is preferably 1 to 50 μm, 2 to 30 μm, 2 to 20 μm, 3 to 10 μm, or 3 to 8 μm.

作為構成夾具用黏著劑層5的黏著劑,優選具有所需的黏著力及再剝離性的黏著劑,例如能夠使用丙烯酸類黏著劑、橡膠類黏著劑、矽酮類黏著劑、氨基甲酸酯類黏著劑、聚酯類黏著劑、聚乙烯基醚類黏著劑等。其中,優選與環形框架等夾具的密合性高且能夠在切割步驟等中有效地抑制保護膜形成用複合片3從環形框架等上剝離的丙烯酸類黏著劑。另外,還可以在夾具用黏著劑層5的厚度方向中夾有作為芯材的基材。As the adhesive constituting the adhesive layer 5 for jigs, an adhesive having required adhesive force and re-peelability is preferable, and for example, acrylic adhesives, rubber adhesives, silicone adhesives, urethane adhesives, etc. can be used. Adhesives, polyester adhesives, polyvinyl ether adhesives, etc. Among them, an acrylic adhesive that has high adhesion to a jig such as a ring frame and can effectively suppress peeling of the protective film-forming composite sheet 3 from the ring frame or the like in a cutting step or the like is preferable. In addition, a base material as a core material may be interposed in the thickness direction of the jig adhesive layer 5 .

從對環形框架等夾具的黏著性的角度出發,夾具用黏著劑層5的厚度優選為5~200μm,特別優選為10~100μm。From the viewpoint of adhesiveness to a jig such as a ring frame, the thickness of the jig adhesive layer 5 is preferably 5 to 200 μm, particularly preferably 10 to 100 μm.

(4. 保護膜形成膜及保護膜形成用片的製造方法) 保護膜形成膜的製造方法沒有特別限定。該膜可使用上述保護膜形成膜用組合物、或利用溶劑稀釋該保護膜形成膜用組合物而得到的組合物(將所述兩種組合物稱作“塗佈劑”)進行製造。塗佈劑可利用公知的方法將構成保護膜形成膜用組合物的成分進行混合而製備。 (4. Manufacturing method of protective film forming film and protective film forming sheet) The manufacturing method of the protective film forming film is not specifically limited. The film can be produced using the above-mentioned composition for forming a protective film or a composition obtained by diluting the composition for forming a protective film with a solvent (these two compositions are referred to as "coating agent"). The coating agent can be prepared by mixing the components constituting the protective film forming composition by a known method.

使用輥塗機、刮刀塗佈機、輥刀塗佈機、氣刀塗佈機、模塗機、棒塗機、凹版塗佈機、幕塗機等塗佈機,將所得到的塗佈劑塗佈於第一剝離膜的剝離面,並根據需要使其乾燥,從而在第一剝離膜上形成保護膜形成膜。其結果,得到如圖2B所示的保護膜形成用片。The obtained coating agent is coated with a coating machine such as a roll coater, a knife coater, a roll coater, an air knife coater, a die coater, a rod coater, a gravure coater, or a curtain coater. Apply to the peeling surface of a 1st peeling film, and if necessary, make it dry, and form a protective film forming film on a 1st peeling film. As a result, a sheet for forming a protective film as shown in FIG. 2B was obtained.

此外,在形成於第一剝離膜上的保護膜形成膜的露出面上進一步貼合第二剝離膜的剝離面,由此得到圖2A所示的保護膜形成用片。Moreover, the peeling surface of the 2nd peeling film was bonded to the exposed surface of the protective film forming film formed on the 1st peeling film, and the sheet|seat for protective film formation shown in FIG. 2A was obtained.

進一步,也可以根據需要對保護膜形成用片進行沖切加工。例如能夠按照以下方式進行沖切加工。如圖4A及4B所示,利用沖模(未圖示),從保護膜形成用片51、52的保護膜形成膜10一側的面上,以貫穿保護膜形成膜10並到達第一剝離膜21的表面的一部分的方式切入切口14。將該以到達表面的一部分的方式切入切口且並不完全切斷的操作稱作半切(half-cut)。其結果,在保護膜形成用片10的表面的一部分,以具有特定的閉合形狀的方式形成有切口14。Furthermore, you may perform punching processing to the sheet|seat for protective film formation as needed. For example, punching can be performed as follows. 4A and 4B, using a die (not shown), from the protective film forming film 10 side of the protective film forming sheet 51, 52, to penetrate the protective film forming film 10 and reach the first release film 21 cuts into the notch 14 by way of a portion of the surface. This operation of cutting into the incision so as to reach a part of the surface without cutting off completely is called a half-cut. As a result, the notch 14 is formed in a part of the surface of the sheet|seat 10 for protective film formation so that it may have a specific closed shape.

由於藉由形成切口,保護膜形成膜被分為沖切加工成特定的閉合形狀的保護膜形成膜16與在其周圍相連的無用部17,因此可以去除無用部。Since the protective film-forming film is divided into the protective film-forming film 16 die-cut into a specific closed shape and the useless part 17 connected therearound by forming the slit, the useless part can be removed.

(5. 保護膜形成用複合片的製造方法) 保護膜形成用複合片的製造方法沒有特別限制。例如,能夠藉由分別製作包含保護膜形成膜的第一層疊體與包含作為支撐片的黏著片的第二層疊體,然後使用第一層疊體及第二層疊體將保護膜形成膜與黏著片層疊而製造。 (5. Manufacturing method of composite sheet for protective film formation) The manufacturing method of the composite sheet for protective film formation is not specifically limited. For example, it is possible to separately produce a first laminate including a protective film forming film and a second laminate including an adhesive sheet as a support sheet, and then use the first laminate and the second laminate to bond the protective film forming film and the adhesive sheet Manufactured by layering.

第一層疊體能夠利用與上述的保護膜形成用片相同的方法而製造。即,在第一剝離膜的剝離面上形成保護膜形成膜,將第二剝離膜的剝離面貼合於保護膜形成膜的露出面。The 1st laminated body can be manufactured by the method similar to the sheet|seat for protective film formation mentioned above. That is, the protective film forming film is formed on the peeling surface of the 1st peeling film, and the peeling surface of the 2nd peeling film is bonded to the exposed surface of the protective film forming film.

在第一層疊體中,可以用與上述的保護膜形成用片相同的方法根據需要實施半切,從而將保護膜形成膜及第二剝離膜製成所需的形狀,例如圓形等。此時,可以適當地去除利用半切而產生的保護膜形成膜及第二剝離膜中多餘的部分。In the first laminate, the protective film forming film and the second peeling film can be formed into a desired shape, such as a circle, by performing half-cutting as necessary by the same method as the protective film forming sheet described above. At this time, excess portions of the protective film-forming film and the second release film generated by the half-cut can be appropriately removed.

另一方面,為了製造第二層疊體,首先,製備構成黏著劑層的黏著劑組合物、或者以溶劑稀釋該黏著劑組合物而得到的組合物(將所述兩種組合物稱作“塗佈劑”)。接著,將塗佈劑塗佈於第三剝離膜的剝離面上,根據需要使其乾燥,從而在第三剝離膜上形成黏著劑層。然後,將基材貼合於黏著劑層的露出面,從而得到由黏著片與第三剝離膜構成的層疊體(第二層疊體),所述黏著片由基材及黏著劑層構成。On the other hand, in order to manufacture the second laminate, first, an adhesive composition constituting the adhesive layer, or a composition obtained by diluting the adhesive composition with a solvent (these two compositions are referred to as "coating") fabrics"). Next, a coating agent is applied on the release surface of the third release film, and dried as necessary to form an adhesive layer on the third release film. Then, the substrate was bonded to the exposed surface of the adhesive layer to obtain a laminate (second laminate) composed of an adhesive sheet composed of the substrate and the adhesive layer and a third release film.

此處,當黏著劑層由能量射線固化性黏著劑構成時,可以在該階段對黏著劑層照射能量射線從而使黏著劑層固化,也可以在與保護膜形成膜層疊後使黏著劑層固化。此外,當在與保護膜形成膜層疊後使黏著劑層固化時,可以在切割步驟前使黏著劑層固化,也可以在切割步驟後使黏著劑層固化。Here, when the adhesive layer is composed of an energy ray-curable adhesive, the adhesive layer may be cured by irradiating the adhesive layer with energy rays at this stage, or the adhesive layer may be cured after being laminated with the protective film forming film. . Furthermore, when the adhesive layer is cured after being laminated with the protective film forming film, the adhesive layer may be cured before the dicing step, or may be cured after the dicing step.

作為能量射線,通常使用紫外線、電子束等。能量射線的照射量因能量射線的種類而異,例如採用紫外線時,以光量計優選為50~1000mJ/cm 2,特別優選為100~500mJ/cm 2。此外,採用電子束時,能量射線的照射量優選為10~1000krad左右。 As the energy rays, ultraviolet rays, electron beams, and the like are generally used. The irradiation amount of energy rays varies depending on the type of energy rays. For example, when ultraviolet rays are used, it is preferably 50 to 1000 mJ/cm 2 in terms of light intensity, and particularly preferably 100 to 500 mJ/cm 2 . In addition, when electron beams are used, the irradiation dose of energy rays is preferably about 10 to 1000 krad.

藉由以上方法得到第一層疊體及第二層疊體後,在剝離第一層疊體中的第二剝離膜的同時,剝離第二層疊體中的第三剝離膜,並將第一層疊體中露出的保護膜形成膜與第二層疊體中露出的黏著片的黏著劑層貼合。After obtaining the first laminated body and the second laminated body by the above method, while peeling off the second peeling film in the first laminated body, the third peeling film in the second laminated body is peeled off, and the first laminated body The exposed protective film forming film is bonded to the adhesive layer of the adhesive sheet exposed in the second laminate.

黏著片可以根據需要進行裁切從而製成所需的形狀,例如直徑大於保護膜形成膜的圓形等。此時,適當去除藉由裁切而產生的黏著片的多餘的部分即可。此外,也可以將黏著片製成使保護膜形成膜與黏著劑層具有相同直徑的圓形等。The adhesive sheet can be cut into a desired shape as required, such as a circle with a diameter larger than that of the protective film forming film. In this case, what is necessary is just to remove the excess part of the adhesive sheet produced by cutting suitably. In addition, the adhesive sheet may be made into a circular shape such that the protective film forming film and the adhesive layer have the same diameter.

由此,得到由黏著劑層層疊於基材上而成的黏著片、層疊於黏著片的黏著劑層側的保護膜形成膜、層疊於保護膜形成膜的與黏著片相反一側的第一剝離膜構成的保護膜形成用複合片。根據需要,在剝離第一剝離膜後,在所露出的保護膜形成膜或黏著劑層的周邊部形成夾具用黏著劑層。Thus, an adhesive sheet in which an adhesive layer is laminated on a substrate, a protective film-forming film laminated on the adhesive layer side of the adhesive sheet, and a first adhesive sheet laminated on the side opposite to the adhesive sheet of the protective film-forming film are obtained. A composite sheet for forming a protective film made of a release film. If necessary, after peeling off a 1st release film, the adhesive layer for jigs is formed in the peripheral part of the exposed protective film forming film or adhesive layer.

(6. 裝置的製造方法) 作為使用了本實施方案的保護膜形成膜的裝置的製造方法的一個實例,對製造在基板上安裝有帶保護膜的晶片的安裝基板的方法進行說明,所述帶保護膜的晶片藉由對貼附有保護膜形成膜的晶圓進行加工而得到。 (6. Manufacturing method of device) As an example of a method of manufacturing a device for forming a film using the protective film of this embodiment, a method of manufacturing a mounting substrate in which a wafer with a protective film is mounted on a substrate by It is obtained by processing the wafer on which the film for forming a protective film is attached.

本實施方案的裝置的製造方法至少具有以下的步驟1~步驟6: 步驟1:將保護膜形成用片所具備的保護膜形成膜、或保護膜形成用複合片所具備的保護膜形成膜貼附於晶圓背面的步驟、 步驟2:將所貼附的保護膜形成膜製成保護膜的步驟、 步驟3:將背面具有保護膜或保護膜形成膜的晶圓單顆化,得到多個帶保護膜或保護膜形成膜的晶片的步驟、 步驟4:使帶保護膜或保護膜形成膜的晶片與助焊劑接觸而將其配置在基板上的步驟、 步驟5:對配置在基板上的帶保護膜或保護膜形成膜的晶片與基板進行加熱的步驟、 步驟6:利用助焊劑清洗劑對配置有帶保護膜的晶片的基板進行清洗的步驟。 The manufacturing method of the device of the present embodiment has at least the following steps 1 to 6: Step 1: a step of attaching the protective film forming film included in the protective film forming sheet or the protective film forming film included in the protective film forming composite sheet to the back surface of the wafer, Step 2: A step of making the attached protective film forming film into a protective film, Step 3: A step of singulating the wafer with a protective film or a protective film forming film on the back side to obtain a plurality of wafers with a protective film or a protective film forming film, Step 4: a step of arranging the wafer with the protective film or the protective film forming film on the substrate by contacting it with flux, Step 5: a step of heating the wafer with the protective film or the protective film-forming film disposed on the substrate and the substrate, Step 6: A step of cleaning the substrate on which the wafer with the protective film is disposed with a flux cleaning agent.

另外,由上述可知,步驟2可以在步驟3及4之前進行,也可以在步驟3之後且步驟4之前進行,還可以在步驟3及4之後進行,但需要在步驟6之前進行。In addition, it can be seen from the above that step 2 can be performed before step 3 and 4, or after step 3 and before step 4, or after step 3 and 4, but it needs to be performed before step 6.

利用圖5~圖7對具有上述步驟1~步驟6的裝置的製造方法進行說明。The manufacturing method of the device having the above steps 1 to 6 will be described with reference to FIGS. 5 to 7 .

如圖5A所示,將保護膜形成用片51的保護膜形成膜10貼附於晶圓6的背面(步驟1)。根據需要剝離第二剝離膜22即可。As shown in FIG. 5A , the protective film forming film 10 of the protective film forming sheet 51 is attached to the back surface of the wafer 6 (step 1). What is necessary is just to peel off the 2nd peeling film 22 as needed.

此外,如圖5B所示,將保護膜形成用複合片61的保護膜形成膜10貼附於晶圓6(步驟1)。此時,也可以利用環形框架7固定保護膜形成膜10的外周部。在本實施方案中,如圖3A所示,由於在保護膜形成膜10的外周部設置有夾具用黏著劑層5,因此將夾具用黏著劑層5貼附於環形框架7。晶圓6被貼附在保護膜形成膜10的與黏著劑層42的貼附面相反的面上。當將保護膜形成膜10貼附於晶圓6時,可以根據需要對保護膜形成膜10進行加熱,從而使其發揮黏著性。Furthermore, as shown in FIG. 5B , the protective film forming film 10 of the protective film forming composite sheet 61 is attached to the wafer 6 (step 1). At this time, the outer peripheral portion of the protective film forming film 10 may be fixed by the ring frame 7 . In this embodiment, as shown in FIG. 3A , since the adhesive layer 5 for the jig is provided on the outer peripheral portion of the protective film forming film 10 , the adhesive layer 5 for the jig is attached to the ring frame 7 . Wafer 6 is attached to the surface of protective film forming film 10 opposite to the surface to which adhesive layer 42 is attached. When attaching the protective film-forming film 10 to the wafer 6 , the protective film-forming film 10 may be heated as necessary to exhibit adhesiveness.

然後,將所貼附的保護膜形成膜10製成保護膜從而形成保護膜(步驟2),得到帶保護膜的晶圓6。當保護膜形成膜10為熱固性時,以特定的溫度將保護膜形成膜10加熱適當時間即可。此外,當保護膜形成膜10為能量射線固化性時,從黏著片4或剝離膜側射入能量射線即可。Then, the attached protective film-forming film 10 is made into a protective film to form a protective film (step 2), and a wafer 6 with a protective film is obtained. When the protective film forming film 10 is thermosetting, what is necessary is just to heat the protective film forming film 10 at a specific temperature for an appropriate time. In addition, when the protective film forming film 10 is energy ray curable, it is sufficient to irradiate the energy ray from the side of the adhesive sheet 4 or the peeling film.

另外,保護膜形成膜10的固化可以在切割步驟後進行,也可以在從黏著片上拾取帶保護膜形成膜的晶片後使保護膜形成膜固化。In addition, the curing of the protective film forming film 10 may be performed after the dicing step, or the protective film forming film may be cured after picking up the wafer with the protective film forming film from the adhesive sheet.

接著,根據需要,把將圖5A所示的保護膜形成用片51的保護膜形成膜10製成保護膜而得到的帶保護膜的晶圓6及環形框架7貼附在公知的切割片22上,切割帶保護膜的晶圓6,得到圖6所示的具有保護膜1的晶片(帶保護膜的晶片70)(步驟3)。Next, if necessary, the wafer 6 with a protective film and the ring frame 7 obtained by forming the protective film forming film 10 of the protective film forming sheet 51 shown in FIG. 5A as a protective film are attached to a known dicing sheet 22. Then, the wafer 6 with the protective film is diced to obtain the wafer with the protective film 1 shown in FIG. 6 (the wafer 70 with the protective film) (step 3).

此外,藉由公知的方法,對將圖5B所示的保護膜形成用複合片61的保護膜形成膜10製成保護膜而得到的帶保護膜的晶圓6進行切割,得到具有保護膜1的晶片(帶保護膜的晶片70)(步驟3)。In addition, the wafer 6 with a protective film obtained by forming the protective film forming film 10 of the protective film forming composite sheet 61 shown in FIG. wafer (wafer with protective film 70) (step 3).

然後,根據需要將切割片或黏著片沿平面方向擴展,利用吸附筒夾(collet)等從切割片上拾取帶保護膜的晶片。Then, the dicing sheet or the adhesive sheet is spread in the planar direction as necessary, and the wafer with the protective film is picked up from the dicing sheet by a suction collet or the like.

可以將所拾取的帶保護膜的晶片運輸至下一步驟,也可以暫時收納保存在托盤、膠帶上並於規定時間後運輸至下一步驟。The picked up wafer with protective film can be transported to the next step, or temporarily stored on a tray or tape and transported to the next step after a predetermined time.

如圖7所示,利用吸附筒夾C將已運輸至下一步驟的帶保護膜的晶片70運輸至基板50,在基板上的端子部處,帶保護膜的晶片70從吸附筒夾C上脫離,從而被配置於可連接凸塊等連接電極與連接焊墊(pad)等端子部的位置(步驟4)。此時,利用公知的方法在帶保護膜的晶片的連接電極側及基板上的端子部中的至少一處塗佈助焊劑。As shown in FIG. 7, the wafer with protective film 70, which has been transported to the next step, is transported to the substrate 50 using the adsorption collet C, and the wafer with protective film 70 is removed from the adsorption collet C at the terminal portion on the substrate. It is detached and arranged at a position where a connection electrode such as a bump can be connected to a terminal portion such as a connection pad (step 4). At this time, flux is applied to at least one of the connection electrode side of the wafer with a protective film and the terminal portion on the substrate by a known method.

同時對配置在基板上的規定位置的帶保護膜的晶片與助焊劑進行加熱處理(例如,回流焊處理)(步驟5)。關於回流焊處理條件,優選例如最高加熱溫度為180~350℃、回流焊時間為2~10分鐘。Simultaneously, heat treatment (for example, reflow treatment) is performed on the wafer with a protective film and flux placed at a predetermined position on the substrate (step 5). Regarding the reflow processing conditions, for example, the maximum heating temperature is preferably 180 to 350° C., and the reflow time is 2 to 10 minutes.

在回流焊處理中,在去除助焊劑附著於帶保護膜的晶片的凸狀電極或基板上的端子部而形成的污漬及氧化膜並降低了焊料的表面張力的狀態下,帶保護膜的晶片70的凸狀電極6b熔融而與基板上的端子部電接合及機械接合,從而將帶保護膜的晶片70安裝在基板上。大部分助焊劑會在完成回流焊處理前揮發,但部分助焊劑會以助焊劑殘渣的形式殘留於帶保護膜的晶片與基板之間的接合部分附近。In the reflow process, in the state where the surface tension of the solder is lowered and the surface tension of the solder is removed, the chip with a protective film The protruding electrode 6b of 70 is melted and electrically and mechanically bonded to the terminal portion on the substrate, whereby the protective film-attached chip 70 is mounted on the substrate. Most of the flux will volatilize before the reflow process is completed, but part of the flux will remain in the form of flux residue near the junction between the wafer with the protective film and the substrate.

為了去除該助焊劑殘渣,在本實施方案中,利用助焊劑清洗劑對安裝有帶保護膜的晶片的基板進行清洗(步驟6)。具體而言,將該基板浸漬於助焊劑清洗劑中,或者對該基板噴射助焊劑清洗劑,從而清洗該基板。作為助焊劑清洗劑,優選醇類清洗劑、胺類清洗劑,更優選既為胺類又為醇類的助焊劑清洗劑,特別優選包含2-氨基乙醇的助焊劑清洗劑。In order to remove this flux residue, in the present embodiment, the substrate on which the wafer with a protective film is mounted is cleaned with a flux cleaning agent (step 6). Specifically, the substrate is cleaned by immersing the substrate in a flux cleaning agent or spraying the flux cleaning agent on the substrate. The flux cleaning agent is preferably an alcohol cleaning agent or an amine cleaning agent, more preferably a flux cleaning agent that is both an amine and an alcohol type, and particularly preferably a flux cleaning agent containing 2-aminoethanol.

在本實施方案中,由於保護膜具有上述的物理特性,因此即使清洗助焊劑,也能夠抑制2-氨基乙醇向保護膜與矽晶片之間的介面滲入,因此在可靠性試驗中能夠有效抑制介面的浮起或剝離。In this embodiment, since the protective film has the above-mentioned physical properties, even if the flux is cleaned, it is possible to prevent 2-aminoethanol from penetrating into the interface between the protective film and the silicon wafer, so that the interface can be effectively suppressed in the reliability test. floating or peeling off.

除了上述的步驟1~步驟6以外,該裝置的製造方法還可以具有對保護膜或保護膜形成膜進行雷射打標的步驟(步驟7)。In addition to the above steps 1 to 6, the manufacturing method of the device may further include a step of laser marking the protective film or the protective film forming film (step 7).

步驟7在步驟2之後且步驟5之前進行。在本實施方案中,步驟7優選在步驟3及步驟4之前進行。Step 7 is performed after Step 2 and before Step 5. In this embodiment, step 7 is preferably performed before step 3 and step 4.

藉由進行雷射打標,在進行雷射打標後,能夠識別帶保護膜形成膜的晶片或帶保護膜的晶片。By performing laser marking, a wafer with a protective film forming film or a wafer with a protective film can be identified after laser marking.

對於雷射打標,可以藉由照射雷射而切削保護膜形成膜或保護膜的表面從而進行打標,也可以藉由照射雷射使保護膜形成膜或保護膜的體積增加從而進行形成凸狀部的打標。使用公知的雷射打標裝置進行雷射打標即可。For laser marking, marking can be performed by cutting the surface of the protective film forming film or the protective film by irradiating laser light, or forming embossing by increasing the volume of the protective film forming film or protective film by irradiating laser light. The marking of the shape part. Laser marking may be performed using a known laser marking device.

(7. 變形例) 還可以在保護膜形成用複合片62的黏著片4的黏著劑層42的周邊部另行設置與上述的保護膜形成用複合片61的夾具用黏著劑層5相同的夾具用黏著劑層。 (7. Variations) A jig adhesive layer similar to the jig adhesive layer 5 of the above-mentioned protective film forming composite sheet 61 may be additionally provided on the peripheral portion of the adhesive layer 42 of the adhesive sheet 4 of the protective film forming composite sheet 62 .

此外,還可以在保護膜形成用複合片61、62的保護膜形成膜10一側的面上層疊剝離膜,以保護保護膜形成膜直至使用該保護膜形成膜時為止。In addition, a peeling film may be laminated on the surface of the protective film forming film 10 side of the protective film forming composite sheets 61 and 62 to protect the protective film forming film until the protective film forming film is used.

以上,對本發明的實施方案進行了說明,但本發明不受上述實施方案的任何限定,可以在本發明的範圍內以各種形式進行變更。 實施例 As mentioned above, although embodiment of this invention was described, this invention is not limited to the said embodiment at all, It can change in various forms within the scope of this invention. Example

以下,利用實施例對本發明進行更詳細的說明,但本發明並不限定於這些實施例。Hereinafter, although an Example demonstrates this invention in more detail, this invention is not limited to these Examples.

(保護膜形成用片的製作) [第一剝離膜(重剝離型剝離膜)] 使用LINTEC Corporation製造的“SP-PET502150(厚度50μm)”。 (Production of sheet for protective film formation) [The first release film (heavy release type release film)] "SP-PET502150 (thickness 50 μm)" manufactured by LINTEC Corporation was used.

[第二剝離膜(輕剝離型剝離膜)] 使用LINTEC Corporation製造的“SP-PET381130(厚度38μm)”。 [Second release film (light release type release film)] "SP-PET381130 (thickness 38 μm)" manufactured by LINTEC Corporation was used.

[包含保護膜形成膜用組合物的塗佈劑] 按照表1所示的配比(固體成分換算)混合下述各成分,用甲基乙基酮稀釋至固體成分濃度為50質量%,由此製備塗佈劑。 (A)聚合物成分 (A-1):使85質量份的丙烯酸甲酯及15質量份的丙烯酸2-羥基乙酯共聚而成的(甲基)丙烯酸酯共聚物(重均分子量:40萬、玻璃化轉變溫度:6℃) (A-2):使15質量份的丙烯酸正丁酯、62質量份的丙烯酸甲酯、13質量份的甲基丙烯酸縮水甘油酯及10質量份的丙烯酸2-羥基乙酯共聚而成的(甲基)丙烯酸酯共聚物(重均分子量:40萬、玻璃化轉變溫度:-1℃) (B)固化性成分(熱固性成分) (B-1)雙酚A型環氧樹脂(Mitsubishi Chemical Corporation製造、jER828、環氧當量184~194g/eq) (B-2)雙酚A型環氧樹脂(Mitsubishi Chemical Corporation製造、jER1055、環氧當量800~900g/eq) (B-3)雙環戊二烯型環氧樹脂(DAINIPPON INK AND CHEMICALS,INC.製造、EPICLON HP-7200HH、軟化點88~98℃、環氧當量255~260g/eq) (C)固化劑:二氰二胺(Mitsubishi Chemical Corporation製造、DICY7) (D)固化促進劑:2-苯基-4,5-二羥基甲基咪唑(SHIKOKU CHEMICALS CORPORATION製造、CUREZOL 2PHZ-PW) (E)填充材料 (E-1)環氧基修飾球形二氧化矽填料(Admatechs公司、SC2050MA、平均粒徑0.5μm) (E-2)乙烯基修飾球形二氧化矽填料(Admatechs公司、SC105G-MMQ、平均粒徑0.3μm) (F)矽烷偶聯劑:含有環氧基、甲基及甲氧基的低聚物型矽烷偶聯劑(Shin-Etsu Silicone Co. Ltd.製造、X-41-1056、環氧當量280g/eq) (G)著色劑 有機類著色劑:將酞菁類藍色顏料(用3倍質量的苯乙烯-丙烯酸樹脂對Pigment Blue 15:3進行了固黏的顏料)、異吲哚啉酮類黃色顏料(以3倍質量的苯乙烯-丙烯酸樹脂對Pigment Yellow 139進行了固黏的顏料)及吡咯並吡咯二酮類紅色顏料(以3倍質量的苯乙烯-丙烯酸樹脂對Pigment Red264進行了固黏的顏料)按照38:18:44(藍:黃:紅,質量比)進行混合而得到的顏料 [Coating Agent Containing Protective Film Forming Film Composition] The following components were mixed according to the composition ratio (solid content conversion) shown in Table 1, and diluted with methyl ethyl ketone so that the solid content concentration became 50 mass %, and the coating agent was prepared. (A) Polymer composition (A-1): A (meth)acrylate copolymer obtained by copolymerizing 85 parts by mass of methyl acrylate and 15 parts by mass of 2-hydroxyethyl acrylate (weight average molecular weight: 400,000, glass transition temperature: 6°C) (A-2): 15 parts by mass of n-butyl acrylate, 62 parts by mass of methyl acrylate, 13 parts by mass of glycidyl methacrylate and 10 parts by mass of 2-hydroxyethyl acrylate copolymerized ( Meth)acrylate copolymer (weight average molecular weight: 400,000, glass transition temperature: -1°C) (B) Curable component (thermosetting component) (B-1) bisphenol A type epoxy resin (manufactured by Mitsubishi Chemical Corporation, jER828, epoxy equivalent 184~194g/eq) (B-2) Bisphenol A type epoxy resin (manufactured by Mitsubishi Chemical Corporation, jER1055, epoxy equivalent 800~900g/eq) (B-3) Dicyclopentadiene-type epoxy resin (manufactured by DAINIPPON INK AND CHEMICALS, INC., EPICLON HP-7200HH, softening point 88-98° C., epoxy equivalent 255-260 g/eq) (C) Curing agent: dicyandiamide (manufactured by Mitsubishi Chemical Corporation, DICY7) (D) Curing accelerator: 2-phenyl-4,5-dihydroxymethylimidazole (manufactured by SHIKOKU CHEMICALS CORPORATION, CUREZOL 2PHZ-PW) (E) Filling material (E-1) Epoxy-modified spherical silica filler (Admatechs, SC2050MA, average particle size 0.5 μm) (E-2) Vinyl-modified spherical silica filler (Admatechs, SC105G-MMQ, average particle size 0.3 μm) (F) Silane coupling agent: oligomer type silane coupling agent containing epoxy, methyl and methoxy groups (manufactured by Shin-Etsu Silicone Co. Ltd., X-41-1056, epoxy equivalent 280g/ eq) (G) Colorant Organic coloring agent: phthalocyanine blue pigment (pigment Blue 15:3 fixed with 3 times the mass of styrene-acrylic resin), isoindolinone yellow pigment (3 times the mass Pigment Yellow 139 fixed with styrene-acrylic resin) and diketopyrrolopyrrole red pigment (pigment Red 264 fixed with 3 times the mass of styrene-acrylic resin) according to 38: Pigments obtained by mixing 18:44 (blue:yellow:red, mass ratio)

[表1] 配比 實施例1 實施例2 比較例1 比較例2 聚合物成分 A-1 150 150 150 A-2 150 環氧樹脂 B-1 60 60 60 60 B-2 10 10 10 10 B-3 30 30 30 30 固化劑 C 2.4 2.4 2.4 2.4 固化促進劑 D 2.4 2.4 2.4 2.4 填充材料 E-1 0 0 320 160 E-2 320 320 0 160 偶聯劑 F 2 2 2 2 著色劑 G 17.9 17.9 17.9 17.9 [Table 1] Proportion Example 1 Example 2 Comparative example 1 Comparative example 2 polymer composition A-1 150 150 150 A-2 150 epoxy resin B-1 60 60 60 60 B-2 10 10 10 10 B-3 30 30 30 30 Hardener C 2.4 2.4 2.4 2.4 curing accelerator D. 2.4 2.4 2.4 2.4 Filler E-1 0 0 320 160 E-2 320 320 0 160 coupling agent f 2 2 2 2 Colorant G 17.9 17.9 17.9 17.9

將所製備的保護膜形成膜用組合物塗佈於第一剝離膜的剝離處理面,在100℃下乾燥2分鐘從而形成厚度為40μm的保護膜形成膜。接著,將第二剝離膜貼附在保護膜形成膜上,得到在保護膜形成膜的兩面均形成有剝離膜的三層結構的保護膜形成用片。關於貼附條件,溫度為60℃、壓力為0.4MPa、速度為1m/分鐘。The prepared protective film-forming film composition was applied to the release-treated surface of the first release film, and dried at 100° C. for 2 minutes to form a protective film-forming film having a thickness of 40 μm. Next, the 2nd release film was stuck on the protective film forming film, and the sheet|seat for protective film formation of a three-layer structure in which the peeling film was formed on both surfaces of the protective film forming film was obtained. Regarding the sticking conditions, the temperature was 60° C., the pressure was 0.4 MPa, and the speed was 1 m/min.

使用所得到的保護膜形成用片進行下述測定及評價。The following measurement and evaluation were performed using the obtained sheet|seat for protective film formation.

(浸漬於2-氨基乙醇後的保護膜與矽晶片之間的介面的剪切強度) 在進行了#2000研磨的矽晶圓(直徑200mm、厚度350μm)的研磨面上貼附切割膠帶(LINTEC Corporation製造的Adwill D-676H),使用切割裝置(DISCO Corporation製造的DFD6362),將矽晶圓切割為30mm×30mm的大小,從切割膠帶上剝離,由此得到矽晶片。 (Shear strength of the interface between the protective film and the silicon wafer dipped in 2-aminoethanol) A dicing tape (Adwill D-676H manufactured by LINTEC Corporation) was attached to the polished surface of a #2000-polished silicon wafer (diameter 200 mm, thickness 350 μm), and the silicon wafer was cut using a dicing device (DFD6362 manufactured by DISCO Corporation). The circle was cut into a size of 30 mm×30 mm, and the silicon wafer was obtained by peeling off the dicing tape.

將實施例及比較例的保護膜形成用片裁切成寬度為5mm、長度為30mm。從所裁切的保護膜形成用片中剝離第二剝離膜,一邊加熱至70℃一邊以0.3m/分鐘的速度將所露出的保護膜形成膜貼附於所得到的矽晶片(30mm×30mm)的中央部。接著,剝離第一剝離膜,藉由加熱(130℃、2小時)而使保護膜形成膜固化,從而得到在矽晶片(30mm×30mm)的中央部形成有寬度為5mm的保護膜的剪切強度測定用帶保護膜的晶片。The sheet|seat for protective film formation of an Example and a comparative example was cut|disconnected into width 5mm, and length 30mm. Peel off the second release film from the cut protective film forming sheet, and attach the exposed protective film forming film to the obtained silicon wafer (30mm×30mm) at a speed of 0.3m/min while heating to 70°C. ) central portion. Next, the first peeling film was peeled off, and the protective film forming film was cured by heating (130° C., 2 hours) to obtain a shear film in which a protective film with a width of 5 mm was formed in the center of a silicon wafer (30 mm×30 mm). A wafer with a protective film for strength measurement.

將所得到的帶保護膜的晶片浸漬於盛滿2-氨基乙醇的超聲波清洗機(SHARP CORPORATION製造,UT-206H)的清洗槽內,在該狀態下,於23℃照射15分鐘頻率為37kHz的超聲波。照射超聲波後,將帶保護膜的晶片從2-氨基乙醇中取出,用蒸餾水對附著於表面的2-氨基乙醇沖洗2秒並擦乾蒸留水後靜置10分鐘,藉由以下所示的方法測定室溫(23℃)下的剪切強度。The obtained wafer with a protective film was immersed in a cleaning tank of an ultrasonic cleaner (manufactured by SHARP CORPORATION, UT-206H) filled with 2-aminoethanol, and in this state, irradiated at 23° C. for 15 minutes with a frequency of 37 kHz. ultrasound. After ultrasonic irradiation, take the wafer with protective film out of the 2-aminoethanol, rinse the 2-aminoethanol attached to the surface with distilled water for 2 seconds, wipe off the distilled water and let it stand for 10 minutes, by the method shown below The shear strength at room temperature (23° C.) was measured.

使用多功能焊接強度測試儀(Nordson Advanced Technology K.K.製造的“DAGE4000”),在23℃的條件下,利用剪切工具(shear tool),在以下的條件下僅對帶保護膜的晶片中的保護膜(高於保護膜與晶片之間的介面5μm的位置)施加力。以200μm/s的速度,以使保護膜的短邊與剪切工具的行進方向垂直的方式向保護膜的表面方向施加力。並且,測定施加於從帶保護膜的晶片端部(0mm)到距該端部15mm的位置(晶片的一半位置)之間的力,去除從測定開始至5mm為止所得到的測定值(前半段的測定值),從剩餘的後半段的測定值(從5mm至15mm為止之間)中求出最大值。對各實施例及比較例中的3個樣本進行該測定,將所求出的最大值的平均值作為剪切強度(N/5mm)。將結果示於表2。Using a multifunctional bond strength tester ("DAGE4000" manufactured by Nordson Advanced Technology K.K.), under the condition of 23°C, using a shear tool (shear tool), under the following conditions, only the protection in the wafer with the protection film The film (at a position 5 μm above the interface between the protective film and the wafer) exerts a force. A force was applied to the surface of the protective film at a speed of 200 μm/s so that the short sides of the protective film were perpendicular to the direction of travel of the shearing tool. Then, the force applied from the edge of the wafer with a protective film (0 mm) to a position 15 mm away from the end (half position of the wafer) was measured, and the measured value obtained from the start of the measurement to 5 mm (first half measured value), and obtain the maximum value from the measured values of the remaining second half (from 5 mm to 15 mm). This measurement was performed for three samples in each Example and Comparative Example, and the average value of the obtained maximum values was defined as the shear strength (N/5 mm). The results are shown in Table 2.

(保護膜表面的2-氨基乙醇的接觸角) 從實施例及比較例的保護膜形成用片中剝離第二剝離膜,一邊加熱至70℃,一邊以0.3m/分鐘的速度將所露出的保護膜形成膜貼附在進行了#2000研磨的矽晶圓(直徑200mm、厚度350μm)的研磨面上。進一步從保護膜形成膜上剝離第一剝離膜,露出保護膜形成膜。在大氣氣氛下的烘箱內,於130℃對貼附有保護膜形成膜的矽晶圓加熱2小時,將保護膜形成膜製成保護膜,從而製作帶保護膜的晶圓。對於帶保護膜的晶圓,按照以下方式測定保護膜表面的2-氨基乙醇的接觸角。在23℃、相對濕度為50%的環境下,使用自動接觸角測量儀(KRUSS公司製造的“DSA100”),測定向保護膜的表面滴加0.2μL的2-氨基乙醇時的接觸角。對各實施例及比較例中的10個樣本進行該測定,將測定值的平均值作為2-氨基乙醇的接觸角。將結果示於表2。 (Contact angle of 2-aminoethanol on the surface of the protective film) Peel off the second release film from the protective film forming sheets of Examples and Comparative Examples, and attach the exposed protective film forming film to a #2000 polished sheet at a speed of 0.3 m/min while heating to 70°C. The grinding surface of a silicon wafer (diameter 200mm, thickness 350μm). Furthermore, the 1st release film was peeled off from the protective film forming film, and the protective film forming film was exposed. The silicon wafer with the protective film forming film attached was heated at 130° C. for 2 hours in an oven under an air atmosphere, and the protective film forming film was formed into a protective film, thereby producing a wafer with a protective film. For the wafer with a protective film, the contact angle of 2-aminoethanol on the surface of the protective film was measured as follows. The contact angle when 0.2 μL of 2-aminoethanol was dropped on the surface of the protective film was measured using an automatic contact angle meter (“DSA100” manufactured by KRUSS) in an environment of 23° C. and a relative humidity of 50%. This measurement was performed on 10 samples in each of Examples and Comparative Examples, and the average value of the measured values was defined as the contact angle of 2-aminoethanol. The results are shown in Table 2.

(浸漬於2-氨基乙醇前後的保護膜表面的光澤度變化率) 從實施例及比較例的保護膜形成用片中剝離第二剝離膜,一邊加熱至70℃,一邊以0.3m/分鐘的速度將所露出的保護膜形成膜貼附在進行了#2000研磨的矽晶圓(直徑200mm、厚度350μm)的研磨面上。進一步從保護膜形成膜上剝離第一剝離膜,露出保護膜形成膜。 (Gloss change rate of the protective film surface before and after immersion in 2-aminoethanol) Peel off the second release film from the protective film forming sheets of Examples and Comparative Examples, and attach the exposed protective film forming film to a #2000 polished sheet at a speed of 0.3 m/min while heating to 70°C. The grinding surface of a silicon wafer (diameter 200mm, thickness 350μm). Furthermore, the 1st release film was peeled off from the protective film forming film, and the protective film forming film was exposed.

在大氣氣氛下的烘箱內,於130℃對貼附有保護膜形成膜的矽晶圓加熱2小時,將保護膜形成膜製成保護膜,從而製作帶保護膜的晶圓。對於帶保護膜的晶圓,利用以下所示的方法測定室溫(23℃)下的浸漬於2-氨基乙醇前的光澤度值。The silicon wafer with the protective film forming film attached was heated at 130° C. for 2 hours in an oven under an air atmosphere, and the protective film forming film was formed into a protective film, thereby producing a wafer with a protective film. About the wafer with a protective film, the glossiness value before immersion in 2-aminoethanol at room temperature (23 degreeC) was measured by the method shown below.

此外,將帶保護膜的晶圓浸漬於盛滿2-氨基乙醇的超聲波清洗機(SHARP CORPORATION製造,UT-206H)的清洗槽內,在該狀態下於23℃照射15分鐘頻率為37kHz的超聲波。照射超聲波後,將帶保護膜的晶片從2-氨基乙醇中取出,用蒸餾水對附著於表面的2-氨基乙醇沖洗2秒並擦乾蒸留水後,靜置10分鐘,對於帶保護膜的晶圓,利用以下所示的方法測定室溫(23℃)下的浸漬於2-氨基乙醇後的光澤度值。In addition, the wafer with the protective film was immersed in the cleaning tank of an ultrasonic cleaner (manufactured by SHARP CORPORATION, UT-206H) filled with 2-aminoethanol, and irradiated with ultrasonic waves at a frequency of 37 kHz at 23°C for 15 minutes in this state. . After irradiating ultrasonic waves, take the wafer with the protective film out of the 2-aminoethanol, rinse the 2-aminoethanol attached to the surface with distilled water for 2 seconds, wipe off the distilled water, and let it stand for 10 minutes. Circle, the gloss value after immersion in 2-aminoethanol at room temperature (23 degreeC) was measured by the method shown below.

使用光澤度計(NIPPON DENSHOKU INDUSTRIES Co.,Ltd.製造、產品名稱“VG 2000”),按照JIS Z 8741,對保護膜的與同晶圓接觸的面相反一側的面射入光線,測定鏡面光澤度,將該鏡面光澤度的值作為保護膜的光澤度值。將入射角設為20∘、45∘、60∘及85∘。對各實施例及比較例中的3個帶保護膜的晶圓,在浸漬於2-氨基乙醇前與浸漬於2-氨基乙醇後進行該測定,將浸漬前的12個光澤度值的平均值設為浸漬於2-氨基乙醇前的光澤度值,將浸漬後的12個光澤度值的平均值設為浸漬於2-氨基乙醇後的光澤度值。Using a gloss meter (manufactured by NIPPON DENSHOKU INDUSTRIES Co., Ltd., product name "VG 2000"), according to JIS Z 8741, light is incident on the surface of the protective film opposite to the surface in contact with the wafer, and the specular surface is measured. Glossiness, the value of the specular glossiness is used as the glossiness value of the protective film. Set the incident angles to 20∘, 45∘, 60∘, and 85∘. For the three wafers with a protective film in each example and comparative example, this measurement was performed before and after immersion in 2-aminoethanol, and the average value of the 12 gloss values before immersion Let it be the glossiness value before immersion in 2-aminoethanol, and let the average value of 12 glossiness values after immersion be the glossiness value after immersion in 2-aminoethanol.

由浸漬於2-氨基乙醇前的光澤度值與浸漬於2-氨基乙醇後的光澤度值計算出浸漬於2-氨基乙醇前後的光澤度變化率[(浸漬於2-氨基乙醇後的光澤度值/浸漬於2-氨基乙醇前的光澤度值)×100]。將結果示於表2。Calculate the change rate of gloss before and after immersion in 2-aminoethanol from the gloss value before immersion in 2-aminoethanol and the gloss value after immersion in 2-aminoethanol [(glossiness after immersion in 2-aminoethanol value/gloss value before immersion in 2-aminoethanol)×100]. The results are shown in Table 2.

(浸漬於2-氨基乙醇後的保護膜的楊氏模量及斷裂伸長率) 層疊多片所製作的保護膜形成膜,製作合計厚度為200μm的保護膜形成膜的層疊體。以130℃、2小時的條件加熱該層疊體從而使保護膜形成膜固化,得到保護膜的層疊體。 (Young's modulus and elongation at break of the protective film dipped in 2-aminoethanol) A plurality of produced protective-film-forming films were laminated to produce a laminate of protective-film-forming films having a total thickness of 200 μm. This laminate was heated at 130° C. for 2 hours to cure the protective film-forming film to obtain a laminate of a protective film.

將所得到的保護膜的層疊體沖切(切斷)為15mm×50mm大小,從而製作測定用樣本。將所製作的測定用樣本浸漬於盛滿2-氨基乙醇的超聲波清洗機(SHARP CORPORATION製造,UT-206H)的清洗槽內,在該狀態下,於23℃照射15分鐘頻率為37kHz的超聲波。照射超聲波後,將保護膜的層疊體從2-氨基乙醇中取出,用蒸餾水對附著於表面的2-氨基乙醇沖洗2秒並擦乾蒸留水後,靜置10分鐘,對於測定用樣本,利用以下所示的方法測定室溫(23℃)下的楊氏模量。The obtained laminated body of the protective film was die-cut (cut) into a size of 15 mm×50 mm to prepare a measurement sample. The prepared measurement sample was immersed in a cleaning tank of an ultrasonic cleaner (manufactured by Sharp Corporation, UT-206H) filled with 2-aminoethanol, and irradiated with ultrasonic waves at a frequency of 37 kHz at 23° C. for 15 minutes in this state. After irradiating ultrasonic waves, take out the laminated body of the protective film from 2-aminoethanol, rinse the 2-aminoethanol adhering to the surface with distilled water for 2 seconds, wipe off the distilled water, and let it stand for 10 minutes. For the measurement sample, use The Young's modulus at room temperature (23° C.) was measured by the method shown below.

使用精密萬能試驗機(SHIMADZU CORPORATION製造的裝置名稱“AUTOGRAPH AG-IS”),依據JIS K 7127,將夾頭間距設為30mm(即試驗用樣本兩端的10mm為夾頭部(非測定部))、將拉伸速度設為50mm/分鐘,在23℃、相對濕度為50%的環境下進行拉伸試驗,對浸漬後的測定用樣本測定楊氏模量(MPa)。將結果示於表1。Using a precision universal testing machine (device name "AUTOGRAPH AG-IS" manufactured by SHIMADZU CORPORATION), according to JIS K 7127, set the gap between the chucks to 30mm (that is, the 10mm at both ends of the test sample is the chuck portion (non-measurement portion)) , The tensile speed was set at 50 mm/min, the tensile test was performed in an environment of 23° C. and a relative humidity of 50%, and the Young’s modulus (MPa) was measured for the sample for measurement after immersion. The results are shown in Table 1.

此外,在對測定用樣本的楊氏模量進行測定時,根據測定用樣本斷裂時的測定用樣本的伸長量求出浸漬後的測定用樣本的斷裂伸長率(%)。將結果示於表2。另外,以空出30mm的距離的方式把持(夾住)測定用樣本的2處,並以此時的測定用樣本的拉伸方向上的長度為基準,當拉伸測定用樣本至斷裂時相較於基準的伸長量為ΔLmm時,可利用下式計算出斷裂伸長率。 斷裂伸長率(%)=[ΔL(mm)/30(mm)]×100 In addition, when measuring the Young's modulus of the measurement sample, the elongation at break (%) of the measurement sample after immersion was obtained from the elongation of the measurement sample when the measurement sample was broken. The results are shown in Table 2. In addition, hold (clamp) two places of the measurement sample with a distance of 30 mm, and based on the length of the measurement sample at this time in the stretching direction, when the measurement sample is stretched until it breaks, the corresponding When the elongation compared to the standard is ΔLmm, the elongation at break can be calculated using the following formula. Elongation at break (%)=[ΔL(mm)/30(mm)]×100

(清洗助焊劑後的黏合可靠性) 首先,從實施例及比較例的保護膜形成用片中剝離第二剝離膜,一邊加熱至70℃,一邊以0.3m/分鐘的速度將所露出的保護膜形成膜貼附在進行了#2000研磨的矽晶圓(直徑200mm、厚度350μm)的研磨面上。進一步從保護膜形成膜上剝離第一剝離膜,露出保護膜形成膜。在大氣氣氛下的烘箱內,於130℃對貼附有保護膜形成膜的矽晶圓加熱2小時,將保護膜形成膜製成保護膜,從而製作帶保護膜的晶圓。 (Adhesion reliability after cleaning flux) First, the second peeling film was peeled off from the protective film forming sheets of Examples and Comparative Examples, and the exposed protective film forming film was attached at a speed of 0.3 m/min while heating to 70° C. The lapping surface of a lapped silicon wafer (diameter 200 mm, thickness 350 μm). Furthermore, the 1st release film was peeled off from the protective film forming film, and the protective film forming film was exposed. The silicon wafer with the protective film forming film attached was heated at 130° C. for 2 hours in an oven under an air atmosphere, and the protective film forming film was formed into a protective film, thereby producing a wafer with a protective film.

接著,在保護膜的面上貼附切割膠帶(LINTEC Corporation製造的Adwill D-676H),使用切割裝置(DISCO Corporation製造的DFD6362),將帶保護膜的矽晶圓切割成3mm×3mm的大小,將其從切割膠帶上剝離,得到帶保護膜的矽晶片。Next, stick a dicing tape (Adwill D-676H manufactured by LINTEC Corporation) on the surface of the protective film, and use a dicing device (DFD6362 manufactured by DISCO Corporation) to cut the silicon wafer with the protective film into a size of 3 mm × 3 mm. Peel it off from the dicing tape to obtain a silicon wafer with a protective film.

模仿安裝半導體晶片時的技術,使用以作為助焊劑清洗劑的2-氨基乙醇進行清洗後的帶保護膜的晶片,進行保護膜的黏合可靠性評價。即,將25個用2-氨基乙醇清洗後的帶保護膜的晶片放入冷熱衝擊裝置(ESPEC CORP.製造的“TSE-11-A”),重複進行1000次於-65℃保持10分鐘後、於150℃保持10分鐘的冷熱迴圈。Using a wafer with a protective film cleaned with 2-aminoethanol as a flux cleaner, the adhesion reliability of the protective film was evaluated by imitating the technique used when mounting semiconductor wafers. That is, 25 wafers with a protective film after cleaning with 2-aminoethanol were placed in a thermal shock device ("TSE-11-A" manufactured by ESPEC CORP.), and repeated 1000 times. After holding at -65°C for 10 minutes , Keep at 150°C for 10 minutes in a cold and hot cycle.

接著,從冷熱衝擊裝置中取出所有的帶保護膜的晶片,使用掃描型超聲波探傷裝置(Sonoscan公司製造的“D9600 TMCSAM”)觀察帶保護膜的半導體晶片的剖面,確認矽晶片與保護膜之間的接合部有無浮起或剝離,並確認矽晶片有無裂紋。並且,對產生了上述的浮起、剝離及裂紋中至少一種的帶保護膜的晶片的個數進行計數,將該個數(NG數)為1個以下的情況判定為可靠性合格(A),將該個數為2個以上的情況判定為可靠性不合格(B)。將結果示於表2。 Next, all the wafers with the protective film were taken out from the thermal shock device, and the cross-section of the semiconductor wafer with the protective film was observed using a scanning ultrasonic flaw detector ("D9600 TM CSAM" manufactured by Sonoscan Corporation) to confirm the gap between the silicon wafer and the protective film. Check whether there is any floating or peeling of the joint between them, and confirm whether there is any crack in the silicon wafer. And, the number of wafers with a protective film in which at least one of the above-mentioned floating, peeling, and cracks occurred was counted, and when the number (NG number) was 1 or less, it was determined that the reliability was acceptable (A) , when the number is 2 or more, it is determined that the reliability is unacceptable (B). The results are shown in Table 2.

[表2] 實施例1 實施例2 比較例1 比較例2 保護膜 浸漬於2-氨基乙醇後 剪切強度 [N/5mm] 40 35 30 32 楊氏模量 [MPa] 740 880 1280 1100 斷裂伸長率 [%] 20 16 8 12 浸漬於2-氨基乙醇前後 光澤度變化率 [%] 111 107 125 121 2-氨基乙醇接觸角[∘] 44 49 60 57 帶保護膜的芯片 清洗助焊劑後的 黏合可靠性試驗 產生裂紋 的個數 0/25 1/25 3/25 2/25 是否合格 A A B B [Table 2] Example 1 Example 2 Comparative example 1 Comparative example 2 protective film After soaking in 2-aminoethanol Shear Strength[N/5mm] 40 35 30 32 Young's modulus [MPa] 740 880 1280 1100 Elongation at break[%] 20 16 8 12 Before and after dipping in 2-aminoethanol Gloss change rate[%] 111 107 125 121 2-aminoethanol contact angle[∘] 44 49 60 57 Chip with protective film Adhesion reliability test after flux cleaning The number of cracks 0/25 1/25 3/25 2/25 Eligibility A A B B

根據表2能夠確認到,當浸漬於2-氨基乙醇後的保護膜與矽晶片之間的介面的剪切強度為33N/5mm以上時,帶保護膜的晶片的可靠性高。From Table 2, it can be confirmed that when the shear strength of the interface between the protective film dipped in 2-aminoethanol and the silicon wafer is 33 N/5mm or more, the reliability of the wafer with the protective film is high.

1:保護膜 4:黏著片 5,42:黏著劑層 6a:晶片 6b:凸狀電極 7:環形框架 10:保護膜形成膜 10a:主面 10b:另一個主面 14:切口 16:保護膜形成膜 17:無用部 21:第一剝離膜 22:第二剝離膜 41:基材 51,52:保護膜形成用片 61,62:保護膜形成用複合片 70:帶保護膜的晶片 1: Protective film 4: Adhesive sheet 5,42: Adhesive layer 6a: Wafer 6b: Convex electrode 7: Ring frame 10: Protective film forming film 10a: main surface 10b: Another main face 14: cut 16: Protective film forming film 17: useless department 21: The first release film 22: Second release film 41: Substrate 51,52: sheet for forming protective film 61,62: Composite sheets for protective film formation 70:Wafer with protective film

圖1為具有將本實施方案的保護膜形成膜製成保護膜而得到的保護膜的晶片的一個實例的剖面示意圖。 圖2A為本實施方案的保護膜形成用片的一個實例的剖面示意圖。 圖2B為本實施方案的保護膜形成用片的另一實例的剖面示意圖。 圖3A為本實施方案的保護膜形成用複合片的一個實例的剖面示意圖。 圖3B為本實施方案的保護膜形成用複合片的另一實例的剖面示意圖。 圖4A為示出對本實施方案的保護膜形成用片的一個實例進行了沖切加工後的狀態的剖面示意圖。 圖4B為示出對本實施方案的保護膜形成用片的另一實例進行了沖切加工後的狀態的剖面示意圖。 圖5A為用於說明將本實施方案的保護膜形成用片貼附於晶圓的步驟的剖面示意圖。 圖5B為用於說明將本實施方案的保護膜形成用複合片貼附於晶圓的步驟的剖面示意圖。 圖6為用於說明將帶保護膜的晶圓單顆化的步驟的剖面示意圖。 圖7為用於說明將帶保護膜的晶片配置在基板上的步驟的剖面示意圖。 FIG. 1 is a schematic cross-sectional view of an example of a wafer having a protective film obtained by forming a protective film-forming film according to the present embodiment as a protective film. Fig. 2A is a schematic cross-sectional view of an example of the sheet for forming a protective film according to this embodiment. Fig. 2B is a schematic cross-sectional view of another example of the sheet for forming a protective film according to this embodiment. Fig. 3A is a schematic cross-sectional view of an example of the composite sheet for forming a protective film according to this embodiment. 3B is a schematic cross-sectional view of another example of the composite sheet for forming a protective film according to this embodiment. 4A is a schematic cross-sectional view showing a state in which an example of the sheet for forming a protective film according to the present embodiment is punched. FIG. 4B is a schematic cross-sectional view showing a state in which another example of the sheet for forming a protective film according to the present embodiment has been punched. 5A is a schematic cross-sectional view for explaining the step of attaching the sheet for forming a protective film according to this embodiment to a wafer. 5B is a schematic cross-sectional view illustrating a step of attaching the protective film-forming composite sheet of the present embodiment to a wafer. FIG. 6 is a schematic cross-sectional view illustrating a step of singulating a wafer with a protective film. FIG. 7 is a schematic cross-sectional view illustrating a step of disposing a wafer with a protective film on a substrate.

1:保護膜 1: Protective film

6a:晶片 6a: Wafer

6b:凸狀電極 6b: Convex electrode

70:帶保護膜的晶片 70:Wafer with protective film

Claims (9)

一種保護膜形成膜,其為用於形成保護膜的保護膜形成膜,其中, 浸漬於2-氨基乙醇後的保護膜與矽晶片之間的介面的剪切強度為33N/5mm以上。 A protective film forming film, which is a protective film forming film for forming a protective film, wherein, The shear strength of the interface between the protective film and the silicon wafer dipped in 2-aminoethanol is above 33N/5mm. 根據請求項1所述的保護膜形成膜,其中, 保護膜表面的2-氨基乙醇的接觸角小於55∘。 The protective film forming film according to claim 1, wherein, The contact angle of 2-aminoethanol on the surface of the protective film is less than 55∘. 根據請求項1或2所述的保護膜形成膜,其中, 浸漬於2-氨基乙醇後的保護膜表面的光澤度值相對於浸漬於2-氨基乙醇前的保護膜表面的光澤度值之比為40%以上且小於130%。 The protective film forming film according to claim 1 or 2, wherein, The ratio of the gloss value of the surface of the protective film after immersion in 2-aminoethanol to the gloss value of the surface of the protective film before immersion in 2-aminoethanol is 40% or more and less than 130%. 根據請求項1~3中任一項所述的保護膜形成膜,其中, 浸漬於2-氨基乙醇後的保護膜的楊氏模量小於1000MPa。 According to the protective film forming film according to any one of claims 1 to 3, wherein, The Young's modulus of the protective film dipped in 2-aminoethanol is less than 1000MPa. 根據請求項1~4中任一項所述的保護膜形成膜,其中, 浸漬於2-氨基乙醇後的保護膜的斷裂伸長率為15%以上。 According to the protective film forming film according to any one of claims 1 to 4, wherein, The elongation at break of the protective film dipped in 2-aminoethanol was 15% or more. 一種保護膜形成用片,其具有請求項1~5中任一項所述的保護膜形成膜與配置在所述保護膜形成膜的至少一個主面上的剝離膜。A protective film forming sheet comprising the protective film forming film according to any one of claims 1 to 5 and a release film arranged on at least one main surface of the protective film forming film. 一種保護膜形成用複合片,其具有請求項1~5中任一項所述的保護膜形成膜與支撐所述保護膜形成膜的支撐片。A composite sheet for forming a protective film comprising the protective film forming film according to any one of claims 1 to 5 and a support sheet supporting the protective film forming film. 一種裝置的製造方法,其具有: 將請求項6所述的保護膜形成用片的保護膜形成膜或請求項7所述的保護膜形成用複合片的保護膜形成膜貼附於工件背面的步驟, 將所貼附的保護膜形成膜製成保護膜的步驟, 將背面具有保護膜或保護膜形成膜的所述工件單顆化,得到多個帶保護膜或保護膜形成膜的工件的加工物的步驟, 使帶保護膜或保護膜形成膜的工件的加工物與助焊劑接觸而將其配置在基板上的步驟, 對配置在基板上的所述帶保護膜或保護膜形成膜的工件的加工物與基板進行加熱的步驟,及 利用助焊劑清洗劑對配置有所述帶保護膜的工件的加工物的基板進行清洗的步驟。 A method of manufacturing a device, comprising: a step of attaching the protective film-forming film of the protective film-forming sheet described in claim 6 or the protective film-forming film of the protective film-forming composite sheet described in claim 7 to the back surface of the workpiece, the step of making the attached protective film forming film into a protective film, The step of singulating the workpiece having a protective film or a protective film forming film on the back surface to obtain a plurality of workpieces having a protective film or a protective film forming film, A step of arranging the processed object of the workpiece with a protective film or a protective film forming film on the substrate by contacting it with flux, a step of heating the substrate and the workpiece of the workpiece with the protective film or the protective film forming film arranged on the substrate, and A step of cleaning the substrate on which the processed object of the workpiece with a protective film is arranged with a flux cleaning agent. 根據請求項8所述的裝置的製造方法,其具有對所述保護膜或所述保護膜形成膜進行雷射打標的步驟。The method of manufacturing a device according to claim 8, which includes the step of performing laser marking on the protective film or the protective film forming film.
TW111109569A 2021-03-23 2022-03-16 Film for forming protective film, sheet for forming protective film, composite sheet for forming protective film, and method for manufacturing device capable of suppressing peeling between a protective film and a chip caused by flux cleaning TW202237784A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021049006A JP2022147663A (en) 2021-03-23 2021-03-23 Protective film forming film, protective film forming sheet, protective film forming composite sheet, and manufacturing method for device
JP2021-049006 2021-03-23

Publications (1)

Publication Number Publication Date
TW202237784A true TW202237784A (en) 2022-10-01

Family

ID=83451651

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111109569A TW202237784A (en) 2021-03-23 2022-03-16 Film for forming protective film, sheet for forming protective film, composite sheet for forming protective film, and method for manufacturing device capable of suppressing peeling between a protective film and a chip caused by flux cleaning

Country Status (4)

Country Link
JP (1) JP2022147663A (en)
KR (1) KR20220132426A (en)
CN (1) CN115181309A (en)
TW (1) TW202237784A (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105009277B (en) 2013-03-19 2017-10-27 琳得科株式会社 Diaphragm formation film

Also Published As

Publication number Publication date
KR20220132426A (en) 2022-09-30
JP2022147663A (en) 2022-10-06
CN115181309A (en) 2022-10-14

Similar Documents

Publication Publication Date Title
JP6604674B2 (en) Protective film forming film, protective film forming sheet, protective film forming composite sheet and inspection method
JP6405556B2 (en) Protective film forming film, protective film forming sheet and inspection method
CN106660332B (en) Protective film forming sheet and method for manufacturing semiconductor chip with protective film
JP6585068B2 (en) Protective film forming film and composite sheet for forming protective film
TWI672353B (en) Protective film forming film, protective film forming sheet, and method of producing the same
JP6554738B2 (en) Protective film-forming film, protective film-forming sheet, workpiece or workpiece manufacturing method, inspection method, workpiece judged to be non-defective, and workpiece judged to be non-defective
JP2004214288A (en) Protection film forming sheet for chip
JP2008166451A (en) Chip protecting film
JPWO2017149925A1 (en) Semiconductor processing sheet
TW202237784A (en) Film for forming protective film, sheet for forming protective film, composite sheet for forming protective film, and method for manufacturing device capable of suppressing peeling between a protective film and a chip caused by flux cleaning
JP6838018B2 (en) Protective film forming film, protective film forming sheet and inspection method
JP6401364B2 (en) Composite sheet for protective film formation and laser printing method
JP6228343B1 (en) Protective film forming film, protective film forming sheet and inspection method
JP7457513B2 (en) PRODUCTION METHOD OF PROTECTIVE FILM-FORMING FILM, COMPOSITE SHEET FOR PROTECTIVE FILM-FORMING, AND APPARATUS
TW202323473A (en) Protective film-forming film, protective film-forming sheet, protective film-forming composite sheet and device manufacturing method that has good splittability of workpiece with a protective film and can suppress poor appearance of the split protective film
JP7217175B2 (en) Semiconductor back adhesion film and dicing tape integrated semiconductor back adhesion film
JP2023047740A (en) Protective film-forming film, protective film-forming sheet, protective film-forming composite sheet, rework method, and device manufacturing method
TW202238699A (en) Support sheet, composite sheet for forming protective film, and manufacturing method of device wherein the support sheet is capable of taking into account of both poor drawing out of the sheet and identifiability of laser marking when viewed through a substrate
JP2017011198A (en) Protective film forming film, protective film forming sheet, manufacturing method of workpiece or processed product, inspection method, workpiece determined as adequate product, and processed product determined as adequate product