TW202236696A - Spectrum chip and preparation method therefor, and spectrum analysis device - Google Patents

Abstract

The present application provides a spectrum chip and a preparation method therefor, and a spectrum analysis device. The preparation method for a spectrum chip comprises: forming at least one light modulation structure on a substrate to obtain a modulation unit; and coupling the modulation unit to a sensing unit, so that the modulation unit is held on a photosensitive path of the sensing unit to obtain a spectrum chip. In this way, the process of forming the light modulation structure is transferred to the substrate. Thus, on the one hand, the limitation that existing spectrum chip manufacturing processes are limited by a wafer factory is broken, and on the other hand, that no pollution to a manufacturing site is caused during the preparation process can be ensured.

Description

Spectrum chip, preparation method thereof, and spectroscopic analysis device

This application relates to the field of spectrum chip technology, more specifically, to a spectrum chip and its preparation method, and a spectrum analysis device, wherein, the preparation method of the spectrum chip transfers the technology of forming a light modulation structure to a substrate, and uses a On the one hand, it can get rid of the limitation that the existing spectral chip manufacturing technology is limited by the fab, and on the other hand, it can ensure that the spectral chip will not be polluted during the preparation process.

The interaction between light and matter, such as absorption, scattering, fluorescence, Raman, etc., will produce a specific spectrum, and the spectrum of each material is unique. Therefore, spectral information can be said to be the "fingerprint" of all things.

The spectrometer can directly detect the spectral information of the substance, and obtain the existence state and material composition of the measured target. It is one of the important testing instruments in the fields of material characterization and chemical analysis. From the perspective of technological development, micro-spectrometers can be divided into four categories: dispersion type, narrow-band filter type, Fourier transform type and computational reconstruction type.

With the development of computer technology, computational reconstruction spectrometers have flourished as a new type of spectrometer in recent years. The reason is to approximate or reconstruct the spectrum of incident light through calculation. Computational reconstruction spectrometer can relatively well solve the problem of detection performance degradation caused by miniaturization.

Since the computational reconstruction spectrometer is an emerging technology, in practical application, the computational reconstruction spectrometer encounters many technical problems and difficulties. Discovering and solving these technical problems and difficulties is the only way to promote the maturity of computational reconstruction spectrometer. Of course, this computational reconstruction principle can also be used in spectral imaging devices.

In computational reconstruction spectrometers or spectral imaging devices, spectral chips are the absolute core components. How to produce spectral chips with high performance, especially to achieve mass production is an industrial problem that needs to be solved.

In order to solve the above-mentioned technical problems, the present application is proposed. Embodiments of the present application provide a spectral chip and its preparation method, and a spectral analysis device, in which the technology of forming a light modulation structure is transferred to a substrate, so as to get rid of the limitation that the existing spectral chip manufacturing technology is limited by a fab on the one hand, And on the other hand, it can ensure that the spectrum chip will not be polluted during the preparation process.

According to one aspect of the present application, a method for preparing a spectrum chip is provided, including: forming at least one light modulation structure on a substrate to obtain a modulation unit; and The modulating unit is coupled to a sensing unit, so that the modulating unit is held on the light-sensing path of the sensing unit to obtain a spectrum chip.

In the preparation method of the spectrum chip according to the present application, the material of the substrate is selected from silicon dioxide, aluminum oxide, acrylic, germanium, or plastic.

In the preparation method of the spectrum chip according to the present application, the at least one light modulation structure includes a first light modulation structure and a second light modulation structure; wherein at least one light modulation structure is formed on the substrate to obtain a modulation A unit, comprising: forming a first light modulation layer on the substrate; etching the first light modulation layer to form a first light modulation structure with at least one first modulation unit; forming a second light modulation layer; and etching the second light modulation layer to form a second light modulation structure with at least one second modulation unit.

In the preparation method of the spectrum chip according to the present application, the at least one modulation unit includes a first light modulation structure; wherein, forming at least one light modulation structure on the substrate to obtain a modulation unit includes: forming a first light modulation layer on the substrate; and etching the first light modulation layer to form a first light modulation structure with at least one first modulation unit.

In the manufacturing method of the spectrum chip according to the present application, forming the first light modulation layer on the substrate includes: depositing the first light modulation layer on the substrate by a deposition technique.

In the method for manufacturing a spectrum chip according to the present application, forming a first light modulation layer on the substrate includes: providing the first light modulation layer; and stacking the light modulation layer on the substrate.

In the preparation method of the spectrum chip according to the present application, forming a second light modulation layer on the first light modulation structure includes: forming a connection layer on the first light modulation layer; and forming a connection layer on the connection The second light modulation layer is formed on the layer.

In the preparation method of the spectrum chip according to the present application, the modulation unit is coupled to the sensing unit, so that the modulation unit is kept on the photosensitive path of the sensing unit to obtain the spectrum chip, including: The modulation unit is coupled to the sensing unit in a flip-chip manner, wherein at least one light modulation structure of the modulation unit is stacked on the sensor.

In the preparation method of the spectrum chip according to the present application, the modulation unit is coupled to the sensing unit in a flip-chip manner, including: forming a dielectric layer on the sensing unit; and, The modulation unit is coupled to the medium layer.

In the preparation method of the spectrum chip according to the present application, coupling the modulation unit to the medium layer includes: forming a bonding layer on at least one light modulation structure of the modulation unit; and, using the bonding The modulation unit is coupled to the medium layer by combining the layers with the medium layer.

In the preparation method of the spectrum chip according to the present application, the dielectric layer and the bonding layer are made of the same material.

In the preparation method of the spectrum chip according to the present application, the distance between the lower surface of the light modulation structure adjacent to the sensing unit in the at least one light modulation structure and the upper surface of the dielectric layer is less than or equal to 10um.

In the preparation method of the spectrum chip according to the present application, the distance between the lower surface of the light modulation structure adjacent to the sensing unit in the at least one light modulation structure and the upper surface of the dielectric layer exceeds a predetermined Set the ratio of the threshold value to be less than or equal to 10%.

In the preparation method of the spectrum chip according to the present application, each corresponding position between the lower surface of the light modulation structure adjacent to the sensing unit and the upper surface of the dielectric layer in the at least one light modulation structure The distance difference is less than ±5-10um.

In the manufacturing method of the spectrum chip according to the present application, the sensing unit includes at least one pixel and a logic circuit layer electrically connected to the at least one pixel.

In the preparation method of the spectrum chip according to the present application, the light modulation structure includes a modulation part and a non-modulation part.

In the manufacturing method of the spectrum chip according to the present application, the modulation part includes at least one light modulation unit, and the non-modulation part includes at least one light filter unit.

In the preparation method of the spectrum chip according to the present application, forming at least one light modulation structure on the substrate to obtain a modulation unit includes: forming a light modulation layer on the substrate; forming the modulating part; and forming the non-modulating part in other partial regions of the light modulating layer.

In the preparation method of the spectrum chip according to the present application, forming at least one light modulation structure on the substrate to obtain a modulation unit includes: forming a first material region and a second material region on the substrate; The first material region is processed to form the modulating portion; and the second material region is processed to form the non-modulating portion.

In the manufacturing method of the spectrum chip according to the present application, the first material region and the second material region have the same thickness.

In the preparation method of the spectrum chip according to the present application, forming the light modulation layer on the substrate includes: depositing the light modulation layer on the substrate by a deposition technique.

In the preparation method of the spectrum chip according to the present application, forming the first material region and the second material region on the substrate includes: depositing the first material region and the second material region on the substrate by deposition technology material area.

In the preparation method of the spectrum chip according to the present application, the modulation unit is coupled to the sensing unit, so that the modulation unit is kept on the photosensitive path of the sensing unit to obtain the spectrum chip, including: The modulation unit is coupled to the sensing unit in a flip-chip manner, wherein at least one light modulation structure of the modulation unit is stacked on the sensing unit.

In the preparation method of the spectrum chip according to the present application, the modulation unit is coupled to the sensing unit in a flip-chip manner, including: forming a dielectric layer on the sensing unit; and, The modulation unit is coupled to the medium layer.

In the preparation method of the spectrum chip according to the present application, coupling the modulation unit to the medium layer includes: forming a bonding layer on at least one light modulation structure of the modulation unit; and, using the bonding The modulation unit is coupled to the medium layer by combining the layers with the medium layer.

In the preparation method of the spectrum chip according to the present application, the dielectric layer and the bonding layer are made of the same material.

In the preparation method of the spectrum chip according to the present application, coupling the modulation unit to the dielectric layer includes: attaching the modulation unit to the sensing unit through an adhesive; or, through a bonding technique The modulation unit is attached to the sensing unit.

In the preparation method of the spectrum chip according to the present application, the modulation unit is coupled to the dielectric layer, including: The modulation unit is fixed on the medium layer by van der Waals force.

In the manufacturing method of the spectrum chip according to the present application, coupling the modulation unit to the dielectric layer includes: combining the modulation unit and the dielectric layer through a package.

In the preparation method of the spectrum chip according to the present application, the distance between the lower surface of the light modulation structure adjacent to the sensing unit in the at least one light modulation structure and the upper surface of the dielectric layer is less than or equal to The side length of the light modulation unit.

According to another aspect of the present application, a method for preparing a spectrum chip is also provided, including: providing a substrate; Forming an array of light modulation structures on the substrate to obtain a modulation unit pattern, the array of light modulation units includes at least two light modulation structures; Provide a sensing unit imposition, the sensing unit imposition includes at least two sensing units; coupling the modulation unit layout to the sensing unit layout to obtain a spectral chip layout; and Divide the spectral chip imposition to obtain at least two spectral chips.

According to still another aspect of the present application, a spectrum chip is also provided, wherein the spectrum chip is prepared by the method for preparing a spectrum chip as described above.

According to another aspect of the present application, there is also provided a spectrum chip, which includes: sensing unit; and A modulation unit held on the photosensitive path of the sensing unit, wherein the modulation unit includes a substrate and at least one light modulation structure formed on the substrate, and the light modulation structure is coupled to the sensing unit A unit, the substrate is located above the light modulation structure and used to protect the light modulation structure.

In the spectrum chip according to the present application, the material of the substrate is selected from silicon dioxide, aluminum oxide, acrylic, germanium or plastic.

In the spectrum chip according to the present application, the light modulation structure includes at least one light modulation unit, and at least part of the light modulation unit is filled with a filler.

In the spectrum chip according to the present application, the at least one light modulation structure includes a first light modulation structure coupled to the sensing unit and a second light modulation structure coupled to the first light modulation structure.

In the spectrum chip according to the present application, the spectrum chip further includes a connection layer arranged between the first light modulation structure and the second light modulation structure, so that the second light can be transmitted through the connection layer The modulation structure is coupled to the first light modulation structure.

In the spectrum chip according to the present application, the first light modulation structure includes at least one light modulation unit, the second light modulation structure includes at least one light modulation unit, and the first light modulation structure and/or the second light modulation structure At least part of the light modulation unit of the second light modulation structure is filled with a filler.

In the spectrum chip according to the present application, the first light modulation structure and the second light modulation structure are made of a material with a relatively high refractive index, and the connection layer is made of a material with a relatively low refractive index.

In the spectrum chip according to the present application, the spectrum chip further includes a dielectric layer formed on the sensing unit, wherein the modulation unit is coupled to the sensing unit in a manner of being bonded to the dielectric layer .

In the spectrum chip according to the present application, the part of the surface of the dielectric layer used for combining the modulation unit is a flat surface.

In the spectrum chip according to the present application, the spectrum chip further includes a bonding layer formed on the light modulation structure, wherein the bonding layer is bonded to the dielectric layer, and in this way, the modulation unit can be The means combined with the medium layer is coupled to the sensing unit.

In the spectrum chip according to the present application, the dielectric layer and the bonding layer are made of the same material.

In the spectrum chip according to the present application, the distance between the lower surface of the light modulation structure adjacent to the sensing unit in the at least one light modulation structure and the upper surface of the dielectric layer is less than or equal to 10um.

In the spectrum chip according to the present application, the distance between the lower surface of the light modulation structure adjacent to the sensing unit in the at least one light modulation structure and the upper surface of the dielectric layer exceeds a preset threshold The proportion of values is less than or equal to 10%.

In the spectrum chip according to the present application, the light modulation structure includes at least one light modulation unit, wherein the lower surface of the light modulation structure adjacent to the sensing unit in the at least one light modulation structure is in contact with the The distance between the upper surfaces of the dielectric layers is less than or equal to the side length of the light modulation unit.

In the spectrum chip according to the present application, any two regions of the lower surface of the light modulation structure adjacent to the sensing unit in the at least one light modulation structure correspond to two regions of the upper surface of the dielectric layer. The difference in the distance between the regions is less than or equal to 10um.

In the spectrum chip according to the present application, the light modulation structure includes a modulation part and a non-modulation part, the modulation part includes at least one light modulation unit, and the non-modulation part includes at least one filter unit.

In the spectrum chip according to the present application, the filter units are arranged in an array to form a Bayer filter.

In the spectrum chip according to the present application, the spectrum chip further includes a package for combining the modulation unit with the sensing unit.

In the spectrum chip according to the present application, the package body integrally covers at least a part of the side surface of the modulation unit and at least a part of the side surface of the sensing unit.

In the spectrum chip according to the present application, the modulation unit and the sensing unit are combined with each other through Van der Waals force under the action of the package.

According to yet another aspect of the present application, a spectroscopic analysis device is also provided, which includes: circuit boards; and A spectrum chip prepared by the method for preparing a spectrum chip as described above, wherein the spectrum chip is electrically connected to the circuit board.

In the spectrum analysis device according to the embodiment of the present application, the spectrum analysis device further includes: an optical component held on the light-sensing path of the spectrum chip.

In the spectrum analysis device according to the embodiment of the present application, the spectrum analysis device further includes a package disposed on the circuit board, wherein the package is integrally formed on the circuit board and covers the spectrum At least a portion of the outer surface of the chip.

In the spectroscopic analysis device according to the embodiment of the present application, the package body is made of an opaque material.

The spectral chip and its preparation method and spectral analysis device provided by the application transfer the technology of forming light modulation structures to the substrate, so as to get rid of the limitation of the existing spectral chip manufacturing technology by the fab on the one hand, and on the other hand On the one hand, it can ensure that the spectrum chip will not be polluted during the preparation process.

Hereinafter, exemplary embodiments according to the present application will be described in detail with reference to the drawings. Apparently, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments of the present application. It should be understood that the present application is not limited by the exemplary embodiments described here.

Application overview

As mentioned above, since the computational reconstruction spectrometer is an emerging technology, in practical application, the computational reconstruction spectrometer encounters many technical problems and difficulties. Discovering and solving these technical problems and difficulties is the only way to promote the maturity of computational reconstruction spectrometer. Of course, this computational reconstruction principle can also be used in spectral imaging devices.

In computational reconstruction spectrometers or spectral imaging devices, spectral chips are the absolute core components. How to produce spectral chips with high performance, especially to achieve mass production is an industrial problem that needs to be solved

In order to achieve mass production, the spectrum chip is prepared by the following preparation technology: first, deposit a layer of light modulation layer material on the existing image sensor (for example, CMOS image sensor, CCD sensor); then, the light modulation layer material is processed Etching, nanoimprinting, etc. to form the light modulation layer. However, this preparation technology may encounter problems in practical industrial implementation.

Specifically, this technology needs to be processed on chip wafers. Therefore, it is necessary to provide product lines and production teams that match wafer-level processing. On the one hand, this will lead to an increase in costs; The monopoly of circular processing technology makes it difficult for the industry to land. In addition, the process of depositing the light modulation layer structure according to the characteristics of the material needs to be carried out under specific high temperature conditions, but the high temperature may cause damage to the wafer. Conversely, considering the heat resistance of the wafer, a compromise must be made in the material selection of the light modulation layer, which will cause the light modulation layer to fail to achieve the best performance due to the material selection. Also, since the image sensor contains a logic circuit, under certain circumstances the metal powder in the logic circuit will fall and cause metal powder pollution to the entire production line.

In view of the above-mentioned technical problems, the inventors of the present application tried to transfer the technology of forming the light modulation structure to the substrate, so as to get rid of the limitations of the existing spectrum chip manufacturing technology on the one hand, and on the other hand to ensure that the manufacturing process There will be no metal powder contamination. That is, the modulation unit of the spectrum chip is formed separately on the substrate and then coupled to the sensor. In this way, the problem that the current spectrum chip manufacturing technology is limited to the fab is solved, and, due to the modulation The unit does not contain logic circuits, so there will be no pollution such as metal powder during the preparation process and further ensure that there will be no pollution during the processing process, and at the same time, it can also avoid high temperature from affecting the performance of the sensor. In order to avoid ambiguity, the present application further describes the wafer, which can be understood as a wafer (wafer) or a chip grain ((die)), that is, a CMOS sensor or chip can be obtained by processing on the wafer. Sensors such as CCD sensors.

Based on this, the present application proposes a preparation method of a spectrum chip, which includes the steps of: providing a substrate; forming at least one light modulation structure on the substrate to obtain a modulation unit; providing a sensing unit; coupled to the sensing unit, so that the modulating unit is kept on the light-sensing path of the sensing unit to obtain a spectrum chip. Correspondingly, the present application also proposes a spectrum chip, which is prepared by the above-mentioned special preparation technology.

After introducing the basic principles of the present application, various non-limiting embodiments of the present application will be described in detail below with reference to the drawings.

Schematic spectrum chip

The spectral chip according to the embodiment of the present application is clarified, wherein the spectral chip is generally applied to computational spectral devices. The computational spectrum device may be a spectrometer or a spectral imaging device. Taking a spectrometer as an example, the most significant difference between a computational spectrometer and a traditional spectrometer is the difference in light filtering. In traditional spectrometers, the filters used for wavelength selection are bandpass filters. The higher the spectral resolution, the narrower the passband and more filters must be used, which increases the size and complexity of the entire system. At the same time, when the spectral response curve becomes narrower, the luminous flux decreases, resulting in a lower signal-to-noise ratio.

For a specific computational spectrometer, each filter generally uses a wide-spectrum filter, which makes the original data detected by the computational spectrometer system quite different from the original spectrum. However, by applying computational reconstruction algorithms, the original spectra can be computationally restored. Such computational spectrometers can detect spectra from darker scenes because broadband filters allow more light to pass through, i.e. light loses less energy, than narrowband filters. In addition, according to the compressive sensing theory, the spectral curves of optical filters can be properly designed to restore sparse spectra with high probability, and the number of optical filters is much smaller than the desired number of spectral channels ((recovering higher-dimensional vectors from lower-dimensional vectors )), which is undoubtedly very conducive to miniaturization. On the other hand, by using a larger number of filters, regularization algorithms ((denoised lower-dimensional vectors obtained from higher-dimensional vectors)) can be used to reduce noise, which increases the signal-to-noise ratio and makes The whole system has higher robustness.

Relatively speaking, when designing a traditional spectrometer, it is necessary to design a filter according to the required wavelength so that light of a specific wavelength can pass through. That is to say, in the design process of traditional spectrometers, it is necessary to focus on controlling the size and position accuracy of the light modulation structure, and at the same time, it is necessary to find ways to improve its transmittance at a specific wavelength. For computational spectrometers, incident light in a wider range of wavelengths (for example, 350nm to 1000nm) can be received. The incident light is modulated by a filter and then received by the sensor. When the transmission spectrum corresponding to the filter is more complex, the corresponding incident light The light recovery effect will be better.

As mentioned above, the spectrum chip according to the embodiment of the present application is prepared by a specific preparation method. Before discussing the preparation method of the spectrum chip, the structure and working principle of the spectrum chip will be described first.

The spectrum chip includes a sensing unit and a modulation unit held on the photosensitive path of the sensing unit, wherein, in particular, the modulation unit includes a substrate and at least one light modulation structure formed on the substrate, so The light modulation structure includes at least one light modulation unit, which can be a modulation hole, a modulation column, a modulation line, etc., and is used to modulate the incident light signal entering the sensing unit to generate a modulation signal.

In some examples of the present application, in order to combine the sensing unit with the sensing unit, the spectrum chip further includes a dielectric layer formed on the sensing unit. In this example, the medium layer is formed on the surface of the sensing unit, and the modulation unit is attached to the upper surface of the medium layer. Correspondingly, preferably, the part of the upper surface of the dielectric layer used for attaching the modulation unit is a flat surface. Preferably, the refractive index difference between the dielectric layer, the optical modulation structure and the substrate is relatively large, for example, the refractive index of the dielectric layer is low, and the refractive index of the optical modulation structure is The index is high, and the refractive index of the substrate is low. It is worth noting that the dielectric layer involved in the present invention can be integrally formed in the structure of the sensing unit, that is, it is an inherent part of the sensing unit; of course, the dielectric layer can also be formed on the sensing unit through subsequent processing. sense unit.

The working principle of the spectrum chip is briefly introduced as follows:

Set the incident light signal as vector X=[X ₁ ,X ₂ ,……X _N ] ^T , and the signal received by the sensing unit is vector Y=[Y ₁ ,Y ₂ ,……Y _M ] ^T , correspondingly, Y=DX+W, wherein, the conversion matrix D is determined by the optical modulation structure, and the vector W is noise. In the actual application of the spectrum chip, it is necessary to calibrate the spectrum chip first to obtain the conversion matrix D, and then use the calibrated spectrum chip to measure the spectrum information of the measured target, that is, use the The known conversion matrix D and the vector Y obtained by the pixel structure are used to solve the spectral signal X of the measured target. The implementation of traditional spectrometers includes spectral splitting using spectroscopic elements, or filtering using narrow-band filters. Under these methods, the spectral accuracy that can be achieved is directly related to the fineness of physical spectroscopy, so there are great requirements for the optical path length of physical components, the robustness of mechanical processing, etc., which in turn makes the high-precision spectrometer larger in size, The cost is relatively expensive and it is difficult to achieve large-scale mass production. For the computational reconstruction spectrometer, after obtaining rich spectral information through physical components, it is analyzed through algorithms. This method is expected to reach a higher level in terms of volume, cost, mass production and accuracy. In order to obtain the spectral information of the light to be measured, the design of the spectrometer needs to have a significant modulation effect on the incident light, so the matching of the refractive index of each structural layer is particularly important.

The invention adopts the calculation spectrum to effectively make a small spectrum analysis device structure, and further provides the spectrum chip manufacturing technology and corresponding structure of the spectrum analysis device, so that the entire spectrum analysis device can be mass-produced.

Embodiment one

In Embodiment 1, as shown in FIG. 1 and FIG. 2 , the spectrum chip 200 includes at least one sensing unit 100 and at least one modulation unit 110 held on the photosensitive path of the at least one sensing unit 100 , Wherein, the modulation unit 110 includes a substrate 111 and at least one light modulation structure 112 formed on the substrate 111 . The light modulation structure 112 can modulate the light entering the spectrum chip 200 to generate a modulated light signal which is then received by the sensing unit 100 .

In a specific implementation, in order to facilitate technical implementation and ensure the performance of the spectrum chip 200, the substrate 111 is made of a light-transmitting material, for example, made of a transparent material, which specifically includes but is not limited to silicon dioxide, alumina etc. In a specific implementation, the light modulation structure 112 can be formed on the substrate 111 by depositing or attaching or bonding (etching and other techniques are also required), wherein the material of the light modulation structure 112 can be implemented It is a material with a high refractive index such as silicon, silicon-based compound, titanium dioxide, tantalum oxide, aluminum oxide, aluminum nitride, or a material with a relatively large refractive index difference from the material of the substrate 111 .

In a specific example of this embodiment, the light modulation structure 112 and the substrate 111 have an integrated structure, which can firstly form a light modulation layer on the substrate 111 through deposition, attachment, bonding and other techniques, and then The light modulation layer is etched by techniques such as nanoimprinting and etching to form the light modulation structure 112 having at least one light modulation unit. Then, attach the integrated modulation unit 110 formed by the substrate 111 and the at least one light modulation structure 112 to the surface of the sensing unit 100, for example, the upper surface of the sensing unit 100, so as to The modulation unit 110 is kept on the photosensitive path of the sensing unit 100 . In a specific implementation, the modulation unit 110 may be combined with the upper surface of the sensing unit 100 by bonding, bonding, sticking and other techniques.

In this embodiment, the sensing unit 100 includes at least one pixel unit 101 , a logic circuit layer electrically connected to the pixel unit 101 , and a memory electrically connected to the logic circuit layer. It is worth mentioning that, in some specific examples, the sensing unit 100 may not include the memory, but only include the at least one pixel unit 101 and the logic circuit layer.

It should be noted that, as shown in FIG. 1 and FIG. 2, in this embodiment, the modulation unit 110 may further include a bonding layer 113 formed on the lower surface of the light modulation structure 112, wherein preferably the The bonding layer 113 has a flat lower surface, so as to avoid the unevenness of the lower surface of the light modulation structure 112 from causing poor bonding with the sensing unit 100 (for example, low matching accuracy, etc.) affected.

Moreover, the surface of the sensing unit 100 may be uneven, which may also affect the bonding effect, thereby affecting the performance of the spectrum chip 200 . Correspondingly, in this embodiment, the spectrum chip 200 further includes a dielectric layer 120 formed on the surface of the sensing unit 100, for example, the dielectric layer 120 can be integrated into the sensing unit by deposition and other techniques The surface of the dielectric layer 100 is then planarized on the upper surface of the dielectric layer 120 . Then transfer the modulation unit 110 to the dielectric layer 120 in such a way that the bonding layer 113 of the modulation unit 110 is bonded to the dielectric layer 120 to obtain the spectrum chip 200, wherein the transfer bonding technique includes But not limited to bonding, attaching, bonding, etc. It is worth mentioning that the dielectric layer 120 can also be integrally formed on the sensing unit 100 , that is, the dielectric layer 120 is implemented as the upper surface of the sensing unit 100 .

It is worth mentioning that in this embodiment, the distance a between the lower surface of the light modulation structure 112 and the upper surface of the dielectric layer 120 is limited, because when the distance is too large, it is easy to cause light crosstalk , that is, the light modulated by the light modulation structure 112 has a certain divergence angle. If the distance a is too large, the modulated light will enter the pixel unit 101 corresponding to the adjacent light modulation structure 112, resulting in the information received by the pixel unit 101 Inaccurate, resulting in poor recovery accuracy. Further, preferably, the distance is less than or equal to twice the side length b of the light modulation structure 112, that is, a≤2b, wherein the light modulation structure 112 is composed of a plurality of nanostructures, and each microstructure has a corresponding Period, according to the period of the nanostructure, the shape and size of the modulation unit 110 can be limited, such as a square or a rectangle, and the distance is less than or equal to twice the short side of the rectangle or twice the side length of the square. In the case of high precision requirements, the distance a may be less than or equal to the side length b, that is, a≤b. Further, an excessively large distance a may easily lead to poor uniformity of the gap between the two. Preferably, the gap a is less than or equal to 10um. Understandably, some gaps greater than 10um caused by manufacturing errors are also within the protection scope of the present application, that is, the lower surface of the light modulation structure 112 and the The distance between the upper surfaces of the dielectric layer 120 is less than or equal to 10um does not require the gap corresponding to any position of the light modulation structure 112 and the dielectric layer 120 to meet this requirement, it may be that some positions meet the requirements, but it is better At least 90% of the area must meet this requirement. More preferably, the distance between the lower surface of the light modulation structure 112 and the upper surface of the dielectric layer 120 is less than or equal to 5um, such as 2.5um. Further, in order to ensure the performance of the spectrum chip 200, further, the distance difference between the lower surface of the light modulation structure 112 and the upper surface of the dielectric layer 120 in any two regions is less than or equal to 10um, preferably less than or equal to 5um to ensure uniformity. It is also worth mentioning that, in this embodiment, preferably, the refractive index of the bonding layer 113 and the dielectric layer 120 are similar, more preferably both are made of the same material (for example, made of made of silicon dioxide). At the same time, the introduction of the bonding layer 113 can also ensure the uniformity of the gap between the sensing unit 100 and the modulation unit 110 , so as to help suppress interference fringes and their effects. In order to prevent particles greater than or equal to 2 microns from adhering to the surface, it is preferable to clean the sensing unit 100 and the modulation unit 110 before combining the sensing unit 100 and the modulation unit 110 .

The problem of equal thickness interference is further explained. Those skilled in the art should know that for general image sensing devices, the spectral range of the detected light usually covers a relatively large range (usually greater than 50nm), for example, the visible light range or the near-infrared range. At this time, since the equal-thickness fringes have different distribution positions of different wavelengths, the light and dark will cancel after being superimposed on each other. Therefore, the equal-thickness interference problem is not obvious in general image sensing devices. However, for the spectrometer device, it needs a higher spectral resolution and requires detection of monochromatic light. At this time, if the thickness of a certain structural layer is not uniform, there will be significant interference fringes of equal thickness, that is, for the calculation As far as spectrometer or spectral imaging device is concerned, it will further affect its detection accuracy. Furthermore, for the visible light field, the wavelength is on the order of hundreds of nanometers, so a small amount of mismatch or inhomogeneity will cause a large error. Correspondingly, the spectrum chip 200 proposed in this application can effectively control the optical path consistency of the overall structure, so as to eliminate the influence caused by equal-thickness interference.

It should also be noted that at least one pixel unit 101 of the sensing unit 100 corresponds to at least one light modulation unit of the light modulation structure 112 to form a modulation unit pixel, and a plurality of modulation unit pixels constitute a spectrum pixel. On the basis of not considering the reconfigurable spectral pixels (re-selecting modulation unit pixels to construct spectral pixels by using algorithms on demand), if there are two modulation unit pixels in one spectral pixel, the two modulation unit pixels contained The light modulation units are usually different, and in principle, it can be understood that the structures of the light modulation units corresponding to the pixels of adjacent modulation units are different.

FIG. 3 illustrates a block diagram of a modified implementation of the spectrum chip 200 according to an embodiment of the present application. As shown in FIG. 3, in this modified embodiment, the dielectric layer 120 is not provided on the surface of the sensing unit 100, but the modulation unit 110 is directly combined with the sensing unit 100, or It is understood that the dielectric layer 120 is the upper surface of the sensing unit 100 . FIG. 4 illustrates a block diagram of another variant implementation of the spectrum chip 200 according to an embodiment of the present application. In this variant embodiment, there is no at least the bonding layer 113 on the lower surface of the light modulation structure 112 , but the modulation unit 110 is directly bonded to the sensing unit 100 .

FIG. 5 illustrates a block diagram of yet another variant implementation of the spectrum chip 200 according to an embodiment of the present application. As shown in FIG. 5, in this modified embodiment, the modulation unit 110 includes two or more layers of light modulation structures 112, so that the transmission spectrum is more complex through the cooperation between at least two layers of the light modulation structures 112, and also That is, two or more layers of light modulation structures 112 can be combined to form a complex transmission spectrum through the combination of simple light modulation structures 112 , thereby reducing the requirements on the processing accuracy of the light modulation structures 112 . Preferably, there are at least two layers of the light modulation structure 112 and the two layers of the light modulation structure 112 are different, that is, the modulation effects of the corresponding regions of the two light modulation layers on the same incident light are different.

For example, in the example shown in FIG. 5 , the modulation unit 110 includes two layers of light modulation structures 112 : a first light modulation structure 114 and a second light modulation structure 115 . In particular, in this variant embodiment, the light modulation units of the first light modulation structure 114 and/or the light modulation units of the second light modulation structure 115 have fillers.

As shown in FIG. 5 , in this example, a connection layer 116 may also be provided between the first light modulation structure 114 and the second light modulation structure 115. Preferably, the connection layer 116 is made of low refraction The reason is that the first light modulation structure 114 and the second light modulation structure 115 are made of high refractive index materials). Correspondingly, the interaction among the substrate 111, the first light modulation structure 114, the connection layer 116, the second light modulation structure 115, the bonding layer 113, and the medium layer 120 jointly control the incident The light is modulated to generate a modulation signal.

Further, as shown in FIG. 8 , the present invention provides a spectrum analysis device, such as a spectrometer and a spectrum imaging device, the spectrum analysis device includes the spectrum chip 200 and a circuit board 310, and the spectrum chip 200 is electrically conductively connected to The circuit board 310 realizes signal transmission and the like. Further, optionally, the spectral analysis device may also include an optical component 320, such as a lens component, etc., the optical component 320 is located on the light path of the spectrum chip 200, after the incident light passes through the optical component 320, and then The light modulation layer entering the spectrum chip 200 is modulated, received by the sensing unit 100, and converted into electrical signals. The spectrum analysis device further includes a package (for example, a plastic frame, a metal frame), and the spectrum chip 200 is housed in the package. Further, in some examples of the present application, the spectrum analysis device may further include a processing unit 330 for processing electrical signals to generate spectra or images.

According to another aspect of the present application, a method for preparing the spectrum chip 200 is also provided, which is used to prepare the spectrum chip 200 as described above. As mentioned above, in order to achieve mass production, the current spectrum chip 200 is prepared using the following preparation technology: first, a layer of light modulation layer material is deposited on an existing image sensor (for example, a CMOS image sensor, a CCD sensor); then The light modulation layer material is etched to form a light modulation layer, that is, the light modulation structure 112 is obtained by processing the light modulation layer. However, this preparation technology has encountered many problems in actual industrial implementation.

Specifically, if the spectral chip 200 manufacturing technology needs to be processed on a chip wafer, it is necessary to provide a product line and a production team that match wafer-level processing. This will lead to an increase in costs on the one hand, and on the other hand, It will be limited by the monopoly of wafer processing technology and it will be difficult for the industry to land. In addition, the process of depositing the light modulation layer structure according to the characteristics of the material needs to be carried out under specific high temperature conditions, but the high temperature may cause damage to the wafer. Conversely, considering the heat resistance of the wafer, a compromise must be made in the material selection of the light modulation layer, which will cause the light modulation layer to fail to achieve the best performance due to the material selection. Also, since the image sensor contains logic circuits, metal powder may be produced to pollute the manufacturing environment.

In view of the above-mentioned technical problems, the inventors of the present application tried to transfer the technology for forming the light modulation structure 112 to the substrate 111, so as to get rid of the limitations of the existing spectrum chip 200 manufacturing technology being limited by the fab on the one hand, and to ensure The spectrum chip 200 will not be polluted during the preparation process. That is, the modulation unit 110 of the spectrum chip 200 is formed separately on the substrate 111 and then coupled to the sensor. In this way, the current problem that the manufacturing technology of the spectrum chip 200 is limited by the fab is solved. Moreover, since the modulation unit 110 does not contain a logic circuit, there will be no pollution such as metal powder during the manufacturing process and further ensure that no pollution will be generated during the processing process. At the same time, it can also avoid high temperature from affecting the performance of the sensor.

6A to 6C illustrate schematic diagrams of the manufacturing method of the spectrum chip 200 according to the embodiment of the present application. As shown in FIGS. 6A to 6C , the manufacturing process of the spectrum chip 200 according to the embodiment of the present application includes: first providing a substrate 111, wherein the material of the substrate 111 is selected from silicon dioxide or alumina and other transparent materials, such as quartz, sapphire, etc., or transparent organic materials, such as plastic, acrylic, etc., or metal materials, such as germanium, etc.

Then, at least one light modulation structure 112 is formed on the substrate 111 to obtain a modulation unit 110 . Correspondingly, when the at least one modulation unit 110 includes only one layer of the light modulation structure 112, for example, only the first light modulation structure 114, at least one light modulation structure 112 is formed on the substrate 111 to obtain a The process of the modulation unit 110 includes: first forming a first light modulation layer on the substrate 111, for example, forming the first light modulation layer on the substrate 111 by a deposition technique, the deposition technique may be a chemical gas Phase deposition (CVD, Chemical Vapor Deposition), atomic layer deposition (ALD, Atomic Layer Deposition), plasma enhanced chemical vapor deposition (PECVD, Plasma Enhanced Chemical Vapor Deposition), physical vapor deposition (PVD, Physical Vapor Deposition ) etc.; then, etching the first light modulation layer to form a first light modulation structure 114 having at least one first modulation unit 110, for example, using techniques such as nanoimprinting and etching on the first light modulation layer A light modulation layer is etched to form a first light modulation structure 114 having at least one first modulation unit 110 .

Of course, the first light modulation layer can also be formed on the substrate 111 by other techniques, for example, the first light modulation layer is prefabricated first, and then the first light modulation layer is stacked on the substrate 111 by mounting technology. on the substrate 111.

Correspondingly, when the at least one light modulation structure 112 includes at least two layers of light modulation structures 112, for example, when including a first light modulation structure 114 and a second light modulation structure 115, at least one light modulation structure 112 is formed on the substrate 111. The process of obtaining a modulation unit 110 from the light modulation structure 112 includes: first forming a first light modulation layer on the substrate 111, for example, depositing the first light modulation layer on the substrate 111 by a deposition technique; and then , etching the first light modulation layer to form a first light modulation structure 114 having at least one first modulation unit 110, for example, using techniques such as nanoimprinting and etching to form a first light modulation structure 114 on the first light modulation layer Etching is performed to form a first light modulation structure 114 having at least one first modulation unit 110; then, a second light modulation layer is formed on the first light modulation structure 114, for example, also by deposition technology on the first The second light modulation layer is formed on the light modulation structure 114 ; then, the second light modulation layer is etched to form a second light modulation structure 115 having at least one second modulation unit 110 . Preferably, the first light modulation structure 114 is filled before the deposition of the second light modulation layer, that is, the first light modulation structure 114 has a filling.

Further, in individual embodiments, the modulating unit 110 may be directly formed by processing an SOI substrate 111 (Silicon-On-Insulator substrate 111 ) or an SOS substrate 111 (silicon on sapphire substrate 111 ). Taking the SOS substrate 111 as an example, the SOS substrate 111 is generally composed of sapphire and silicon single crystal, and the light modulation structure 112 having at least one modulation unit 110 is formed by processing the silicon single crystal.

It is worth mentioning that, in some examples of the present application, a connection layer 116 may also be provided on the first light modulation structure 114. Preferably, the connection layer 116 is made of a material with a low refractive index to pass The connection layer 116 is used to combine the first light modulation structure 114 and the second light modulation structure 115 . Correspondingly, in this example, forming a second light modulation layer on the first light modulation structure 114 includes: first, forming a connection layer 116 on the first light modulation layer; then, forming a connection layer 116 on the connection The second light modulation layer is formed on layer 116 .

Then, a sensing unit 100 is provided. The sensing unit 100 includes at least one pixel unit 101 , a logic circuit layer electrically connected to the pixel unit 101 , and a memory electrically connected to the logic circuit layer. It is worth mentioning that, in some specific examples, the sensing unit 100 may not include the memory, but only include the at least one pixel unit 101 and the logic circuit layer.

Next, the modulation unit 110 is coupled to the sensing unit 100 so that the modulation unit 110 is kept on the light-sensing path of the sensing unit 100 to obtain the spectrum chip 200 . In this example, the modulation unit 110 is coupled to the sensing unit 100 in a flip-chip manner, wherein at least one light modulation structure 112 of the modulation unit 110 is stacked on the sensing unit 100 . In a specific example, the process of flip-chip coupling the modulation unit 110 to the sensing unit 100 includes: first, forming a dielectric layer 120 on the sensing unit 100, preferably Specifically, the medium layer 120 is made of a material with a low refractive index; then, the modulation unit 110 is coupled to the medium layer 120 . Optionally, before coupling, the modulation unit 110 and/or the sensing unit 100 may be cleaned to remove surface particles.

In order to avoid the unevenness of the lower surface of the light modulation structure 112 from causing poor combination with the sensing unit 100 (for example, low matching accuracy, etc.) and thus affecting the performance of the spectrum chip 200, in some examples of the present application , a bonding layer 113 may also be formed on at least one light modulation structure 112 of the modulation unit 110; then, the modulation unit 110 is coupled to the The dielectric layer 120 . Preferably, the bonding layer 113 and the dielectric layer 120 have similar refractive indices, and more preferably both are made of the same material (for example, both are made of silicon dioxide).

It is worth mentioning that in this embodiment, the distance a between the lower surface of the light modulation structure 112 and the upper surface of the dielectric layer 120 is limited, because when the distance is too large, it is easy to cause light crosstalk , that is, the light modulated by the light modulation structure 112 has a certain divergence angle. If the distance a is too large, the modulated light will enter the pixel unit 101 corresponding to the adjacent light modulation structure 112, resulting in the information received by the pixel unit 101 Inaccurate, resulting in poor recovery accuracy. Further, preferably, the distance is less than or equal to twice the side length b of the light modulation structure 112, that is, a≤2b, wherein the light modulation structure 112 is composed of a plurality of nanostructures, and each microstructure has a corresponding Period, according to the period of the nanostructure, the shape and size of the modulation unit 110 can be limited, such as a square or a rectangle, and the distance is less than or equal to twice the short side of the rectangle or twice the side length of the square. In the case of high precision requirements, the distance a may be less than or equal to the side length b, that is, a≤b. Further, an excessively large distance a may easily lead to poor uniformity of the gap between the two. Preferably, the gap a is less than or equal to 10um. Understandably, some gaps greater than 10um caused by manufacturing errors are also within the protection scope of the present application, that is, the lower surface of the light modulation structure 112 and the The distance between the upper surfaces of the dielectric layer 120 is less than or equal to 10um does not require the gap corresponding to any position of the light modulation structure 112 and the dielectric layer 120 to meet this requirement, it may be that some positions meet the requirements, but it is better At least 90% of the area must meet this requirement. More preferably, the distance between the lower surface of the light modulation structure 112 and the upper surface of the dielectric layer 120 is less than or equal to 5um, such as 2.5um. Further, in order to ensure the performance of the spectrum chip 200, further, the distance difference between the lower surface of the light modulation structure 112 and the upper surface of the dielectric layer 120 in any two regions is less than or equal to 20um, preferably less than or equal to 10um or 5um to ensure uniformity. It is also worth mentioning that, in this embodiment, preferably, the refractive index of the bonding layer 113 and the dielectric layer 120 are similar, more preferably both are made of the same material (for example, made of made of silicon dioxide). At the same time, the introduction of the bonding layer 113 can also ensure the uniformity of the gap between the sensing unit 100 and the modulation unit 110 , so as to help suppress interference fringes and their effects.

In order to enable mass production, the sensing unit 100 can implement imposition technology, that is, the sensing unit imposition 1000 has at least two sensing units 100, wherein the sensing unit 100 can be CMOS, CCD, InGaAs Sensors, and modulation sensors with quantum dots or nanowires and other optical filter structures on the upper surface; then form a dielectric layer 120 on the surface of the sensing unit 100 by deposition and other techniques and planarize the upper surface of the dielectric layer 120 . Correspondingly, at least two light modulation structures 112 are formed on the substrate 111 to form a modulation unit imposition 1100, and then the modulation unit imposition 1100 is pasted on the flat dielectric layer 120 of the leaflet unit imposition to obtain a semi-finished spectral chip 2000, wherein the light modulation structure 112 of the modulation unit 110 is aligned with the corresponding sensing unit 100, and then the spectrum chip semi-finished product 2000 is cut to obtain the spectrum chip 200.

Here, the substrate 111 can be implemented as quartz, sapphire, etc. The substrate 111 can be used as the substrate 111 to deposit the light modulation layer material on its surface, and the light modulation structure 112 can be formed after nanoimprinting, etching, etc. , in the modulation unit imposition 1100 , it can be understood that a plurality of identical modulation units 110 are formed on one substrate 111 , and each modulation unit 110 and the corresponding sensing unit 100 form a modulation unit pixel.

That is, in this embodiment of the present application, the preparation method of the spectral chip 200 includes the steps: first, providing a substrate 111; then, forming an array of light modulation structures 112 on the substrate 111 to obtain a modulation unit imposition 1100, the light modulation unit array includes at least two light modulation structures 112; then, provide a sensing unit imposition 1000, the sensing unit imposition 1000 includes at least two sensing units 100; then, the modulation unit imposition 1100 Coupled to the sensing unit imposition 1000 to obtain the spectrum chip 200 imposition; Optionally, before coupling, the modulation unit imposition 1100 and/or the sensing unit imposition are cleaned to remove surface particles; finally , dividing the imposition of the spectrum chips 200 to obtain at least two spectrum chips 200 .

Embodiment two

The difference from Embodiment 1 is that the sensing unit 100 and the modulating unit 110 are simply bonded together, and a van der Waals force is formed between them; preferably, the After the spectrum chip 200, after the spectrum chip 200 is attached to the circuit board 310, a package body 130 is formed on the surface of the circuit board 310 and the side and/or surface of the spectrum chip 200. 130 makes the circuit board 310 , the spectrum chip 200 and the package body 130 an integrated structure, as shown in FIG. 9 . In some embodiments, the package body 130 does not need to cooperate with the circuit board, that is, the package body 130 is attached to the sensing unit 100 and the modulation unit 110, so that the sensing unit is fixed by the package body 130 100 and the modulation unit 110.

Further, the package body 130 serves to fix the sensing unit 100 and the modulation unit 110 of the spectrum chip 200 in this embodiment. In this embodiment, since the sensing unit 100 and the modulating unit 110 are directly bonded, and the fixing of the modulating unit 110 and the sensing unit 100 is realized by the package body 130, that is, the sensing unit 100 in this embodiment The unit 100 and the modulation unit 110 do not need to be bonded or bonded by an adhesive, ensuring that the gap between the two is less than or equal to 2.5 μm, and at the same time avoiding the change of the refractive index caused by the adhesive and the possibility of bonding. The temperature is too high and so on. It is worth mentioning that the package body 130 is equivalent to a bracket in the spectrum analysis device, and can be used to support the optical component 320 and the like.

Further, the package body 130 can be formed by molding technology, that is, to assemble the circuit board 310 and the spectrum chip 200 to achieve electrical conduction, place them in a mold, inject molding materials, and open the mold after curing , cutting to obtain the spectrum chip 200 . It is also possible to set a mold between the spectrum chip 200 and the circuit board 310 , and then inject an adhesive into the mold, and form the package body 130 after the adhesive is cured.

Of course, it is also possible to directly fix the spectrometer chip 200 by gluing the processed package body 130 . It is worth mentioning that this embodiment does not limit how the package body 130 is arranged and formed. It only needs to realize that the package body 130 can integrate the spectrum chip 200, the circuit board 310 and the package body 130 to improve the spectrum. To analyze the reliability of the device, the packaging body 130 can also play a role of fixing the sensing unit 100 and the modulation unit 110 .

Further, in this embodiment, the package body 130 includes a main body and a fixing part integrally extending inward from the main body, and the adhesive is provided on the fixing part and the main body of the package body 130 the bottom of the main body, so that the fixed part is bonded to the upper surface of the substrate 111 of the modulation unit 110, and the bottom of the main body is bonded to the circuit board 310 through the adhesive, so that through the The package body 130 integrates the spectrum chip 200 , the circuit board 310 and the package body 130 .

It is worth mentioning that, preferably, the side wall of the main body is in close contact with the side wall of the spectrum chip 200, so as to prevent horizontal sliding. Preferably, the package body 130 is made of opaque material, so that the package body 130 can also prevent stray light from entering the spectrum chip 200 from the side of the modulation unit 110 , which reduces the precision.

Embodiment three

As shown in FIG. 10 , the present application also provides a photosensitive component, which includes a circuit board 310 and a spectrum chip 200 electrically connected to the circuit. The photosensitive component includes a package body 130 , the package body 130 is formed on the surface of the circuit board 310 and surrounds the sensing unit 100 of the spectrum chip 200 .

Preferably, the photosensitive component first attaches the sensing unit 100 of the spectrum chip 200 to the circuit board 310 and realizes electrical conduction (COB and CSP are both acceptable), preferably the sensing unit 100 There is a dielectric layer 120 with a flat upper surface, and then the package body 130 is formed on the non-photosensitive area of the sensing unit 100 and the surface of the circuit board 310 by molding, attaching and other technologies, which can be understood as the The sensing unit 100, the circuit board 310 and the package body 130 are integrated, and then the modulation unit 110 is attached to the surface of the sensing unit 100, thereby obtaining the photosensitive component, and further the modulation unit The distance between the lower surface of the light modulation structure 112 of 110 and the upper surface of the dielectric layer 120 of the sensing unit 100 is less than or equal to 2.5 μm. Preferably, the modulation unit 110 and the package body 130 are bonded and fixed by an adhesive. It is worth mentioning that the thickness of the adhesive is less than or equal to 2.5 μm. Preferably, the refractive index of the adhesive can be consistent with that of the dielectric layer 120 or the light modulation layer, so as to prevent equal thickness interference.

Preferably, this embodiment can also be carried out by imposition technology, that is, a circuit board 310 is provided for imposition, and the sensing unit 100 is respectively attached to the circuit board 310. Preferably, the surface of the sensing unit 100 has a smooth upper surface. Dielectric layer 120, and then form a package body 130 on the non-photosensitive area of the circuit board 310 and the sensing unit 100 by molding technology, pasting, etc.; then attach the modulation unit imposition 1100 to the circuit board 310 imposition, the modulation unit 110 is aligned with the sensing unit 100 to form a plurality of pixels of the modulation unit 110, and optionally, the modulation unit 110 and the sensing unit 100 can be combined Clean and remove surface particles; it is worth mentioning that the surface of the package 130 is generally flat, and an adhesive can be coated on the surface of the package 130, because each modulation unit 110 on the modulation unit imposition 1100 There is a certain distance between them, that is, there is an attachment area between the modulation units 110. After the modulation unit imposition 1100 is attached to the circuit board 310, the adhesive on the package 130 agent to make the attachment area of the modulation unit imposition 1100 adhere to the package body 130, so as to fix the circuit board 310 imposition and the modulation unit imposition 1100, obtain the photosensitive component imposition, and then carry out Cut to obtain photosensitive components.

Optionally, the photosensitive assembly further includes a light-shielding member, which is formed on the side and surface edge of the substrate 111 to prevent stray light from entering the sensing unit 100 .

Embodiment four

The difference from the third embodiment is that, as shown in FIG. 11 , in this embodiment, the package body 130 does not wrap the sensing unit 100 , that is, the package body 130 is formed on the circuit board 310 first, The package body 130 has a light opening (the previous embodiments also have it), and then the sensing unit 100 is attached to the circuit board 310 through the light opening, and conduction is realized; then the modulation unit is made up 1100 is attached to the imposition of the circuit board 310 , and an adhesive is provided on the upper surface of the package body 130 for bonding the attachment area of the modulation unit imposition 1100 . Then, the photosensitive component imposition is cut to obtain the photosensitive component. At this time, an adhesive may be applied between the modulation unit 110 and the sensing unit 100 .

For the third embodiment and the fourth embodiment, the modulation unit 110 may also be individually attached to the surface of each sensing unit 100 . In addition, it should be noted that the distance between the upper surface of the dielectric layer 120 of the modulation unit 110 and the lower surface of the light modulation structure 112 of the modulation unit 110 is less than or equal to 2.5 μm, so the upper surface of the package 130 needs to be considered when designing. The distance a to the upper surface of the dielectric layer 120, and the thickness b of the adhesive disposed on the upper surface of the package body 130, the height c of the light modulation structure 112 is set according to the distance a and thickness b, that is, a+b-c ≤2μm.

Embodiment five

In Embodiment 5, as shown in FIG. 12 and FIG. 13 , the spectrum chip 200 includes at least one sensing unit 100 and at least one modulation unit 110 held on the photosensitive path of the at least one sensing unit 100 , Wherein, the modulation unit 110 includes a substrate 111 and at least one light modulation structure 112 formed on the substrate 111 . The light modulation structure 112 can modulate the light entering the spectrum chip 200 to generate a modulated light signal which is then received by the sensing unit 100 .

As shown in Figure 12, the light modulation structure 112 includes a modulation part 114 and a non-modulation part 115, wherein the modulation part 114 includes at least one light modulation unit 1140, and the light modulation unit 1140 can be a modulation hole, a modulation column , modulation line, etc., used to modulate the incident light signal entering the sensing unit 100 to generate a modulation signal; the non-modulating part 115 includes at least one filter unit 1150, used to The incident light signal is filtered.

In the embodiment of the present application, the filter unit 1150 can be R, G, B, W, Y and other filter units 1150, for example, the filter unit 1150 can constitute an RGGB, RYYB, RGBW Bayer filter, or It can be a single filter unit or a combination of multiple filter units to form an irregular Bayer filter, as shown in FIG. 14 . Certainly, in other examples of the present application, the non-modulation part 115 may not include any optical modulation function, and may only be made of light-transmitting material, or may be a part without any material.

In a specific implementation, in order to facilitate technical implementation and ensure the performance of the spectrum chip 200, the substrate 111 is made of a light-transmitting material, for example, made of a transparent material, which specifically includes but is not limited to silicon dioxide, Aluminum oxide, etc., such as quartz, sapphire, etc. In a specific implementation, the light modulation structure 112 can be formed on the substrate 111 by depositing or attaching or bonding (of course, techniques such as etching are also required), wherein the material of the light modulation structure 112 can be It is implemented as silicon, silicon-based compounds, titanium dioxide, tantalum oxide, aluminum oxide, aluminum nitride and other high-refractive-index materials or materials with a relatively large refractive index difference from the material of the substrate 111 .

That is, in the embodiment of the present application, the light modulation structure 112 and the substrate 111 have an integrated structure. In specific fabrication, an optical modulation layer may be formed on the substrate 111 by deposition, attachment, bonding, and other techniques, and then etched by nanoimprinting, etching, and other techniques to form Said light modulation structure 112 has a modulating portion 114 and a non-modulating portion 115 . Then, attach the integrated modulation unit 110 formed by the substrate 111 and the at least one light modulation structure 112 to the surface of the sensing unit 100, for example, the upper surface of the sensing unit 100, so as to The modulation unit 110 is kept on the photosensitive path of the sensing unit 100 . In a specific implementation, the modulation unit 110 may be combined with the upper surface of the sensing unit 100 by bonding, bonding, sticking and other technologies.

In this embodiment, the sensing unit 100 includes at least one pixel unit 101 , a logic circuit layer electrically connected to the pixel unit 101 , and a memory electrically connected to the logic circuit layer. It is worth mentioning that, in some specific examples, the sensing unit 100 may not include the memory, but only include the at least one pixel unit 101 and the logic circuit layer.

It should be noted that, as shown in FIG. 12 and FIG. 13 , in this embodiment, the modulation unit 110 may further include a bonding layer 113 formed on the lower surface of the light modulation structure 112, wherein preferably the The bonding layer 113 has a flat lower surface, so as to avoid the unevenness of the lower surface of the light modulation structure 112 from causing poor bonding with the sensing unit 100 (for example, low matching accuracy, etc.) affected.

Moreover, the surface of the sensing unit 100 may be uneven, which may also affect the bonding effect, thereby affecting the performance of the spectrum chip 200 . Correspondingly, in this embodiment, the spectrum chip 200 further includes a dielectric layer 120 formed on the surface of the sensing unit 100, for example, the dielectric layer 120 can be integrated into the sensing unit by deposition and other techniques The surface of the dielectric layer 100 is then planarized on the upper surface of the dielectric layer 120 . Then transfer the modulation unit 110 to the dielectric layer 120 in such a way that the bonding layer 113 of the modulation unit 110 is bonded to the dielectric layer 120 to obtain the spectrum chip 200, wherein the transfer bonding technique includes But not limited to bonding, attaching, bonding, etc. It is worth mentioning that the dielectric layer 120 can also be integrally formed on the sensing unit 100 , that is, the dielectric layer 120 is implemented as the upper surface of the sensing unit 100 .

It is worth mentioning that in this embodiment, the distance a between the lower surface of the light modulation structure 112 and the upper surface of the dielectric layer 120 is limited, because when the distance is too large, it is easy to cause light crosstalk , that is, the light modulated by the light modulation structure 112 has a certain divergence angle. If the distance a is too large, the modulated light will enter the pixel unit 101 corresponding to the adjacent light modulation structure 112, resulting in the information received by the pixel unit 101 Inaccurate, resulting in poor recovery accuracy. Further, preferably, the distance is less than or equal to twice the side length b of the light modulation structure 112, that is, a≤2b, wherein the light modulation structure 112 is composed of a plurality of light modulation units 1140, and each light modulation unit 1140 has Corresponding period, according to the period of the light modulation unit 1140, the shape and size of the modulation unit 110 can be limited, such as a square or a rectangle, and the distance is less than or equal to twice the short side of the rectangle or twice the side length of the square. In the case of high precision requirements, the distance a may be less than or equal to the side length b, that is, a≤b. Further, an excessively large distance a may easily lead to poor uniformity of the gap between the two. Preferably, the gap a is less than or equal to 10um. Understandably, some gaps greater than 10um caused by manufacturing errors are also within the protection scope of the present application, that is, the lower surface of the light modulation structure 112 and the The distance between the upper surfaces of the dielectric layer 120 is less than or equal to 10um does not require the gap corresponding to any position of the light modulation structure 112 and the dielectric layer 120 to meet this requirement, it may be that some positions meet the requirements, but it is better At least 90% of the area must meet this requirement. More preferably, the distance between the lower surface of the light modulation structure 112 and the upper surface of the dielectric layer 120 is less than or equal to 5um, such as 2.5um. Further, in order to ensure the performance of the spectrum chip 200, further, the distance difference between the lower surface of the light modulation structure 112 and the upper surface of the dielectric layer 120 in any two regions is less than or equal to 10um, preferably less than or equal to 5um to ensure uniformity. It is also worth mentioning that, in this embodiment, preferably, the refractive index of the bonding layer 113 and the dielectric layer 120 are similar, more preferably both are made of the same material (for example, made of made of silicon dioxide). At the same time, the introduction of the bonding layer 113 can also ensure the uniformity of the gap between the sensing unit 100 and the modulation unit 110 , so as to help suppress interference fringes and their effects. In order to prevent particles greater than or equal to 2 microns from adhering to the surface, it is preferable to clean the sensing unit 100 and the modulation unit 110 before combining the sensing unit 100 and the modulation unit 110 .

The problem of equal thickness interference is further explained. Those skilled in the art should know that for general image sensing devices, the spectral range of the detected light usually covers a relatively large range (usually greater than 50nm), for example, the visible light range or the near-infrared range. At this time, since the equal-thickness fringes have different distribution positions of different wavelengths, the light and dark will cancel after being superimposed on each other. Therefore, the equal-thickness interference problem is not obvious in general image sensing devices. However, for the spectrometer device, it needs a higher spectral resolution and requires detection of monochromatic light. At this time, if the thickness of a certain structural layer is not uniform, there will be significant interference fringes of equal thickness, that is, for the calculation For spectrometers, it will further affect its detection accuracy. Furthermore, for the visible light field, the wavelength is on the order of hundreds of nanometers, so a small amount of mismatch or inhomogeneity will cause a large error. Correspondingly, the spectrum chip 200 proposed in this application can effectively control the optical path consistency of the overall structure, so as to eliminate the influence caused by equal-thickness interference.

It should also be noted that at least one pixel unit 101 of the sensing unit 100 corresponds to at least one light modulation unit 1140 of the light modulation structure 112 to form a modulation unit pixel, and a plurality of modulation unit pixels constitute a spectrum pixel. On the basis of not considering the reconfigurable spectral pixels (re-selecting modulation unit pixels to construct spectral pixels by using algorithms on demand), if there are two modulation unit pixels in one spectral pixel, the two modulation unit pixels contained The light modulation units 1140 are usually different, and in principle it can be understood that the structures of the light modulation units 1140 corresponding to pixels of adjacent modulation units are different.

It is worth mentioning that, in other examples of the present application, the dielectric layer 120 may not be provided on the surface of the sensing unit 100, but the modulation unit 110 is directly combined with the sensing unit 100, or It can be understood that the dielectric layer 120 is the upper surface of the sensing unit 100 . Of course, instead of at least the bonding layer 113 on the lower surface of the light modulation structure 112 , the modulation unit 110 may be directly bonded to the sensing unit 100 .

Moreover, in other modified embodiments of the present application, the modulation unit 110 may also include a greater number of light modulation structures 112, that is, the modulation unit 110 includes two or more layers of light modulation structures 112, so that The cooperation of the light modulation structure 112 makes the transmission spectrum more complex, that is, two or more layers of the light modulation structure 112 can be combined to form a complex transmission spectrum through a simple light modulation unit 1140, thereby reducing the impact on the light modulation structure 112. Machining accuracy requirements. Preferably, there are at least two layers of the light modulation structure 112 and the two layers of the light modulation unit 1140 are different, that is, the modulation effects of the corresponding regions of the two light modulation layers on the same incident light are different.

For example, in a specific variant embodiment, the at least one light modulation structure 112 includes two layers of light modulation structures 112: a first light modulation structure and a second light modulation structure. Preferably, the light modulation unit 1140 of the first light modulation structure and/or the light modulation unit 1140 of the second light modulation structure has fillers. Further, a connection layer can also be provided between the first light modulation structure and the second light modulation structure, preferably, the connection layer is made of low refractive index material (the reason is that the first The light modulation structure and the second light modulation structure are made of high refractive index material). Moreover, a protective layer may also be provided on the upper surface of the first light modulation structure (in this embodiment, the substrate 111 forms the protective layer). Correspondingly, the interaction among the substrate 111, the first light modulation structure, the connection layer, the second light modulation structure, the bonding layer 113 and the medium layer 120 jointly modulates the incident light. to generate a modulated signal.

Further, as shown in FIG. 17 , the present application also provides a spectrum analysis device 300, such as a spectrometer and a spectrum imaging device, the spectrum analysis device 300 includes the spectrum chip 200 and a circuit board, and the spectrum chip 200 is electrically connected It is connected to the circuit board to realize signal transmission and the like. Further, optionally, the spectrum analysis device 300 may also include an optical component 320, such as a lens component, etc., the optical component 320 is located on the light path of the spectrum chip 200, after the incident light passes through the optical component 320, The light modulation layer entering the spectrum chip 200 is modulated, received by the sensing unit 100, and converted into electrical signals. The spectrum analysis device 300 further includes a package (for example, a plastic bracket, a metal bracket, etc.), and the spectrum chip 200 is housed in the package. Further, in some examples of the present application, the spectrum analysis device 300 may further include a processing unit 330 for processing electrical signals to generate spectra or images.

According to another aspect of the present application, a method for preparing the spectrum chip 200 is also provided, which is used to prepare the spectrum chip 200 as described above. As mentioned above, in order to achieve mass production, the current spectrum chip 200 is prepared using the following preparation technology: first, a layer of light modulation layer material is deposited on an existing image sensor (for example, a CMOS image sensor, a CCD sensor); then and etching the light modulation layer material to form the light modulation structure 112 . However, this preparation technology has encountered many problems in actual industrial implementation.

Specifically, this technology needs to be processed on the sensor wafer corresponding to the existing CMOS image sensor or CCD sensor. Therefore, it is necessary to provide a product line and production team that match wafer-level processing, which will lead to an increase in cost. , On the other hand, it will also be limited by the monopoly of sensor wafer processing technology and it will be difficult for the industry to land. In addition, the process of depositing the light modulation layer structure according to the characteristics of the material needs to be carried out under specific high temperature conditions, but the high temperature may cause damage to the sensor wafer. Conversely, considering the heat resistance of the sensor wafer, compromises must be made in the selection of materials for the light modulation layer, which will cause the light modulation layer to fail to achieve optimal performance due to material selection. Also, since the image sensor contains logic circuits, metal powder may be generated to pollute the manufacturing environment.

In view of the above-mentioned technical problems, the inventors of the present application tried to transfer the technology for forming the light modulation structure 112 to the substrate 111, so as to get rid of the limitations of the existing spectrum chip 200 manufacturing technology being limited by the fab on the one hand, and to ensure The spectrum chip 200 will not be polluted during the preparation process. That is, the modulation unit 110 of the spectrum chip 200 is formed separately on the substrate 111 and then coupled to the sensor. In this way, the current problem that the manufacturing technology of the spectrum chip 200 is limited by the fab is solved. Moreover, since the modulation unit 110 does not contain a logic circuit, there will be no pollution such as metal powder during the manufacturing process and further ensure that no pollution will be generated during the processing process. At the same time, it can also avoid high temperature from affecting the performance of the sensor.

FIG. 15A to FIG. 15C illustrate schematic diagrams of the manufacturing method of the spectrum chip 200 according to the embodiment of the present application. As shown in Figures 15A to 15C, the manufacturing process of the spectrum chip 200 according to the embodiment of the present application includes: firstly providing a substrate 111, wherein the material of the substrate 111 is selected from silicon dioxide or alumina and other transparent materials, such as quartz, sapphire, etc., or transparent organic materials, such as plastic, acrylic, etc., or metal materials, such as germanium, etc.

Then, at least one light modulation structure 112 is formed on the substrate 111 to obtain a modulation unit 110 , the light modulation structure 112 includes a modulation part 114 and a non-modulation part 115 . Correspondingly, in this example, it is taken that the non-modulation part 115 includes at least one filter unit 1150 and the filter unit 1150 forms a Bayer array as an example.

Specifically, in this example, forming at least one light modulation structure 112 on the substrate 111 to obtain a modulation unit 110 includes: firstly forming a first material region 116 and a second material region 117 on the substrate 111, That is, materials required for forming the modulation portion 114 and the non-modulation portion 115 are formed on the substrate 111, respectively. It is worth mentioning that the first material region 116 and the second material region 117 can be formed of the same material or different materials, and the materials include but not limited to: silicon, silicide, tantalum oxide, Titanium dioxide, etc. More specifically, in a specific implementation, the first material region 116 and the second material region 117 may be formed on the substrate 111 by a deposition technique, and the deposition technique may be chemical vapor deposition (CVD, Chemical Vapor Deposition), Atomic Layer Deposition (ALD, Atomic Layer Deposition), Plasma Enhanced Chemical Vapor Deposition (PECVD, Plasma Enhanced Chemical Vapor Deposition), Physical Vapor Deposition (PVD, Physical Vapor Deposition), etc. Moreover, preferably, the first material region 116 and the second material region 117 have the same thickness dimension, of course, the thickness dimension of the two may also be different.

Here, when the first material region 116 and the second material region 117 have the same thickness and are of the same material, the first material region 116 and the second material region 117 are of the same layer of material. For the convenience of description, This same layer material is named light modulation layer.

Next, the first material region 116 is processed to form the modulation portion 114 , and the second material region 117 is processed to form the non-modulation portion 115 . More specifically, firstly, a mask layer is formed on the upper surfaces of the first material region 116 and the second material region 117 , for example, on the upper surfaces of the first material region 116 and the second material region 117 Laying photoresist glue to form the mask layer.

Then, the filling hole required for forming the filter unit 1150 is formed by developing, exposing, etching and other techniques; then, filling the filling hole with a first filter material to form the filter of the non-modulation part 115 light unit 1150; then, remove the old mask layer and form a new mask layer, and again use techniques such as development, exposure, and etching to form the filling holes required for forming the filter unit 1150; then, in the Fill the filling hole with the second filter material to form the filter unit 1150 of the non-modulation part 115; then, remove the old mask layer again to form a new mask layer, and again through development, exposure, etching and other techniques to form the filling hole required for forming the filter unit 1150 ; then, filling the filling hole with a third filter material to form the filter unit 1150 of the non-modulation portion 115 . That is, the plurality of filter units 1150 form a Bayer array by repeating multiple techniques.

Next, the old mask layer is removed and a new mask layer is formed, and the first material region 116 is processed again by techniques such as developing, exposing, and etching to form a modulator with at least one light modulating unit 1140. Section 114.

Then, the mask layer is removed to obtain the modulation unit 110 as described above. It is worth mentioning that, optionally, a bonding layer 113 may be formed on the surface of the modulation unit 110 .

Next, a sensing unit 100 is provided. The sensing unit 100 includes at least one pixel unit 101 , a logic circuit layer electrically connected to the pixel unit 101 , and a memory electrically connected to the logic circuit layer. It is worth mentioning that, in some specific examples, the sensing unit 100 may not include the memory, but only include the at least one pixel unit 101 and the logic circuit layer.

Next, the modulation unit 110 is coupled to the sensing unit 100 so that the modulation unit 110 is kept on the light-sensing path of the sensing unit 100 to obtain the spectrum chip 200 . In this example, the modulation unit 110 is coupled to the sensing unit 100 in a flip-chip manner, wherein at least one light modulation structure 112 of the modulation unit 110 is stacked on the sensing unit 100 . In a specific example, the process of flip-chip coupling the modulation unit 110 to the sensing unit 100 includes: first, forming a dielectric layer 120 on the sensing unit 100, preferably Specifically, the medium layer 120 is made of a material with a low refractive index; then, the modulation unit 110 is coupled to the medium layer 120 . Optionally, before coupling, the modulation unit 110 and/or the sensing unit 100 may be cleaned to remove surface particles.

In order to avoid the unevenness of the lower surface of the light modulation structure 112 from causing poor combination with the sensing unit 100 (for example, low matching accuracy, etc.) and thus affecting the performance of the spectrum chip 200, in some examples of the present application , a bonding layer 113 may also be formed on at least one light modulation structure 112 of the modulation unit 110; then, the modulation unit 110 is coupled to the The dielectric layer 120 . Preferably, the bonding layer 113 and the dielectric layer 120 have similar refractive indices, and more preferably both are made of the same material (for example, both are made of silicon dioxide).

It is worth mentioning that in this embodiment, the distance a between the lower surface of the light modulation structure 112 and the upper surface of the dielectric layer 120 is limited, because when the distance is too large, it is easy to cause light crosstalk , that is, the light modulated by the light modulation structure 112 has a certain divergence angle. If the distance a is too large, the modulated light will enter the pixel unit 101 corresponding to the adjacent light modulation structure 112, resulting in the information received by the pixel unit 101 Inaccurate, resulting in poor recovery accuracy. Further, preferably, the distance is less than or equal to twice the side length b of the light modulation structure 112, that is, a≤2b, wherein the light modulation structure 112 is composed of a plurality of light modulation units 1140, and each light modulation unit 1140 has Corresponding period, according to the period of the light modulation unit 1140, the shape and size of the modulation unit 110 can be limited, such as a square or a rectangle, and the distance is less than or equal to twice the short side of the rectangle or twice the side length of the square. In the case of high precision requirements, the distance a may be less than or equal to the side length b, that is, a≤b. Further, an excessively large distance a may easily lead to poor uniformity of the gap between the two. Preferably, the gap a is less than or equal to 10um. Understandably, some gaps greater than 10um caused by manufacturing errors are also within the protection scope of the present application, that is, the lower surface of the light modulation structure 112 and the The distance between the upper surfaces of the dielectric layer 120 is less than or equal to 10um does not require the gap corresponding to any position of the light modulation structure 112 and the dielectric layer 120 to meet this requirement, it may be that some positions meet the requirements, but it is better At least 90% of the area must meet this requirement. More preferably, the distance between the lower surface of the light modulation structure 112 and the upper surface of the dielectric layer 120 is less than or equal to 5um, such as 2.5um. Further, in order to ensure the performance of the spectrum chip 200, further, the distance difference between the lower surface of the light modulation structure 112 and the upper surface of the dielectric layer 120 in any two regions is less than or equal to 20um, preferably less than or equal to 10um or 5um to ensure uniformity. It is also worth mentioning that, in this embodiment, preferably, the refractive index of the bonding layer 113 and the dielectric layer 120 are similar, more preferably both are made of the same material (for example, made of made of silicon dioxide). At the same time, the introduction of the bonding layer 113 can also ensure the uniformity of the gap between the sensing unit 100 and the modulation unit 110 , so as to help suppress interference fringes and their effects.

In order to enable mass production, the sensing unit 100 can implement imposition technology, that is, the sensing unit imposition 1000 has at least two sensing units 100, wherein the sensing unit 100 can be CMOS, CCD, InGaAs Sensors, and modulation sensors with quantum dots or nanowires and other optical filter structures on the upper surface; then form a dielectric layer 120 on the surface of the sensing unit 100 by deposition and other techniques and planarize the upper surface of the dielectric layer 120 . Correspondingly, at least two light modulation structures 112 are formed on the substrate 111 to form a modulation unit imposition 1100, and then the modulation unit imposition 1100 is pasted on the flat dielectric layer 120 of the leaflet unit imposition to obtain a semi-finished spectral chip 2000, wherein the light modulation structure 112 of the modulation unit 110 is aligned with the corresponding sensing unit 100, and then the spectrum chip semi-finished product 2000 is cut to obtain the spectrum chip 200.

Here, the substrate 111 can be implemented as quartz, sapphire, etc. The substrate 111 can be used as the substrate 111 to deposit the light modulation layer material on its surface, and the light modulation structure 112 can be formed after nanoimprinting, etching, etc. , in the modulation unit imposition 1100 , it can be understood that a plurality of identical modulation units 110 are formed on one substrate 111 , and each modulation unit 110 and the corresponding sensing unit 100 constitute the spectrum chip 200 .

That is, in this embodiment of the present application, the preparation method of the spectral chip 200 includes the steps: first, providing a substrate 111; then, forming an array of light modulation structures 112 on the substrate 111 to obtain a modulation unit imposition 1100, the light modulation unit 1140 array includes at least two light modulation structures 112; then, provide a sensing unit 100 imposition, the sensing unit imposition 1000 includes at least two sensing units 100; then, the modulation unit imposition 1100 is coupled to the sensing unit imposition 1000 to obtain the spectral chip 200 imposition; optionally, before coupling, the modulation unit imposition 1100 and/or the sensing unit imposition are cleaned to remove surface particles; Finally, divide the imposition of spectrum chips 200 to obtain at least two spectrum chips 200 .

Further, in a variant embodiment, the difference from Embodiment 5 is that the non-modulation part 115 can be selected to be engraved or not processed corresponding to the second material region 117; continue to implement the non-modulation part 115 as a Bayer array As an example, the Bayer array can be pre-set in the sensing unit 100. At this time, the technology only needs to form a light modulation layer on the substrate 111, and then process the first material region 116 to obtain a modulated light modulation layer. part 114 , and in a modified embodiment, since the Bayer array has been formed on the sensing unit 100 , the second material region 117 may not be processed or hollowed out.

Embodiment six

The difference from the fifth embodiment is that the sensing unit 100 and the modulating unit 110 are simply bonded together, and a van der Waals force is formed between them; preferably, the After the spectrum chip 200, after the spectrum chip 200 is attached to the circuit board, a package body 130 is formed on the surface of the circuit board and the side and/or surface of the spectrum chip 200, and the package body 130 makes The circuit board, the spectrum chip 200 and the package body 130 are integrated, as shown in FIG. 7 . In some embodiments, the package body 130 does not need to cooperate with the circuit board, that is, the package body 130 is attached to the sensing unit 100 and the modulation unit 110, so that the sensing unit is fixed by the package body 130 100 and the modulation unit 110.

Further, the package body 130 serves to fix the sensing unit 100 and the modulation unit 110 of the spectrum chip 200 in this embodiment. In this embodiment, since the sensing unit 100 and the modulating unit 110 are directly bonded, and the fixing of the modulating unit 110 and the sensing unit 100 is realized by the package body 130, that is, the sensing unit 100 in this embodiment The unit 100 and the modulation unit 110 do not need to be bonded or bonded by an adhesive, ensuring that the gap between the two is less than or equal to 2.5 μm, and to a certain extent, problems such as changes in the refractive index caused by the adhesive can be avoided. It is worth mentioning that the package body 130 is equivalent to a bracket in the spectrum analysis device 300 and can be used to support the optical component 320 and the like.

Further, the package body 130 can be formed by molding technology, that is, the circuit board imposition and the spectrum chip 200 are assembled and electrically connected, then placed in a mold, and then injected with molding materials, and the mold is opened after curing. cutting to obtain the spectrum chip 200 . It is also possible to set a mold between the spectral chip 200 and the circuit board, then inject the adhesive into the mold, and form the package body 130 after the adhesive is cured.

Of course, it is also possible to directly fix the spectrometer chip 200 by gluing the processed package body 130 . It is worth mentioning that this embodiment does not limit how the package body 130 is arranged and formed. It is only necessary to realize that the package body 130 can integrate the spectrum chip 200, the circuit board and the package body 130 to improve the spectrum analysis. The reliability of the device 300 , or the package body 130 plays a role of fixing the sensing unit 100 and the modulation unit 110 .

Further, in this embodiment, the package body 130 includes a main body and a fixing part integrally extending inward from the main body, and the adhesive is provided on the fixing part and the main body of the package body 130 the bottom of the main body, so that the fixed part is bonded to the upper surface of the substrate 111 of the modulation unit 110, and the bottom of the main body is bonded to the circuit board through the adhesive, so that through the The package body 130 integrates the spectrum chip 200 , the circuit board and the package body 130 .

It is worth mentioning that, preferably, the side wall of the main body is in close contact with the side wall of the spectrum chip 200, so as to prevent horizontal sliding. Preferably, the package body 130 is made of opaque material, so that the package body 130 can also prevent stray light from entering the spectrum chip 200 from the side of the modulation unit 110, causing noise and reducing the accuracy .

Embodiment seven

As shown in FIG. 19 , the present application also provides a photosensitive component, which includes a circuit board and a spectrum chip 200 electrically connected to the circuit. The photosensitive component includes a package body 130 , the package body 130 is formed on the surface of the circuit board and surrounds the sensing unit 100 of the spectrum chip 200 .

Preferably, the photosensitive component first attaches the sensing unit 100 of the spectral chip 200 to the circuit board and realizes electrical conduction (COB and CSP are both acceptable), preferably the sensing unit 100 The surface has a dielectric layer 120 with a flat upper surface, and then the package body 130 is formed on the non-photosensitive area of the sensing unit 100 and the surface of the circuit board by molding, attaching and other technologies, which can be understood as the sensing The unit 100, the circuit board and the package body 130 have an integrated structure, and then the modulation unit 110 is attached to the surface of the sensing unit 100, thereby obtaining the photosensitive component, and further the modulation unit 110 The distance between the lower surface of the light modulation structure 112 and the upper surface of the dielectric layer 120 of the sensing unit 100 is less than or equal to 2.5 μm. Preferably, the modulation unit 110 and the package body 130 are bonded and fixed by an adhesive. It is worth mentioning that the thickness of the adhesive is less than or equal to 2.5 μm. Preferably, the refractive index of the adhesive can be consistent with that of the dielectric layer 120 or the light modulation layer, so as to prevent equal thickness interference.

Preferably, this embodiment can also be implemented by imposition technology, that is, a circuit board imposition is provided, and the sensing units 100 are respectively attached to the circuit board. Preferably, the surface of the sensing unit 100 has a dielectric layer with a flat upper surface 120, and then form a package body 130 on the non-photosensitive area of the circuit board and the sensing unit 100 through molding technology, pasting, etc.; then attach the modulation unit imposition 1100 to the circuit board imposition, so The modulation unit 110 is aligned with the sensing unit 100 to form a plurality of pixels of the modulation unit 110. Optionally, the modulation unit 110 and the sensing unit 100 may be cleaned first to remove surface particles. It is worth mentioning that the surface of the package body 130 is generally flat, and an adhesive can be coated on the surface of the package body 130, because there is a certain gap between each modulation unit 110 on the modulation unit imposition 1100. spacing, that is, there is an attachment area between the modulation units 110, after the modulation unit imposition 1100 is attached to the circuit board imposition, the adhesive on the package 130 makes the modulation The attaching area of the unit imposition 1100 is bonded to the package body 130 so as to fix the circuit board imposition and the modulation unit imposition 1100 to obtain the photosensitive element imposition, which is then cut to obtain the photosensitive element.

Optionally, the photosensitive assembly further includes a light-shielding member, which is formed on the side and surface edge of the substrate 111 to prevent stray light from entering the sensing unit 100 .

Embodiment Eight

The difference from Embodiment 7 is that, as shown in FIG. 20, in this embodiment, the package body 130 does not wrap the sensing unit 100, that is, the package body 130 is first formed on the circuit board, so The package body 130 has a light opening (the previous embodiments also have it), and then the sensing unit 100 is attached to the circuit board through the light opening, and conduction is realized; Attached to the imposition of the circuit board, the upper surface of the package body 130 is provided with an adhesive for adhering the attachment area of the imposition of the modulation unit 1100 . Then, the photosensitive component imposition is cut to obtain the photosensitive component. At this time, an adhesive may be applied between the modulation unit 110 and the sensing unit 100 .

For the third embodiment and the fourth embodiment, the modulation unit 110 may also be individually attached to the surface of each sensing unit 100 . In addition, it should be noted that the distance between the upper surface of the dielectric layer 120 of the modulation unit 110 and the lower surface of the light modulation structure 112 of the modulation unit 110 is less than or equal to 2.5 μm, so the upper surface of the package 130 needs to be considered when designing. The distance a to the upper surface of the dielectric layer 120, and the thickness b of the adhesive disposed on the upper surface of the package body 130, the height c of the light modulation structure 112 is set according to the distance a and thickness b, that is, a+b-c ≤2μm.

In particular, it should be noted that in this application, the substrate 111 is located above the light modulation structure 112 to cover the light modulation structure 112, so that the light modulation structure 112 and the sensing unit 100 can be controlled. to the protective effect.

The basic principles of the present application have been described above in conjunction with specific embodiments, but it should be pointed out that the advantages, advantages, effects, etc. mentioned in the application are only examples rather than limitations, and these advantages, advantages, effects, etc. Various embodiments of this application must have. In addition, the specific details disclosed above are only for the purpose of illustration and understanding, rather than limitation, and the above details do not limit the application to be implemented by using the above specific details.

100: Sensing unit 110: modulation unit 111: Substrate 112: Light modulation structure 113: binding layer 120: medium layer 200: spectrum chip 114: The first light modulation structure 115: Second light modulation structure 116: Connection layer 1000: Sensing unit imposition 1100: Modulation unit imposition 2000: Chip semi-finished products 320: Optical components 330: processing unit 130: Encapsulation 310: circuit board 101: Pixel unit 1150: filter unit 1140: light modulation unit 117: second material area

Various other advantages and benefits of the present application will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings in the description are for the purpose of illustrating the preferred embodiments only and are not to be considered as limiting the application. Apparently, the diagrams described below are only some embodiments of the present application, and those with ordinary knowledge in the technical field can obtain other diagrams based on these diagrams without any creative effort. Also throughout the drawings, the same components are denoted by the same reference numerals.

FIG. 1 illustrates a schematic diagram of a spectrum chip according to an embodiment of the present application.

Fig. 2 illustrates a block diagram of the spectrum chip according to an embodiment of the present application.

Fig. 3 illustrates a block diagram of a modified implementation of the spectrum chip according to an embodiment of the present application.

Fig. 4 illustrates a block diagram of another variant implementation of the spectrum chip according to an embodiment of the present application.

Fig. 5 illustrates a block diagram of yet another variant implementation of the spectrum chip according to an embodiment of the present application.

6A to 6C illustrate schematic diagrams of the preparation method of the spectrum chip according to the embodiment of the present application.

7A to 7C illustrate schematic diagrams of the imposition preparation method of the spectrum chip according to the embodiment of the present application.

FIG. 8 illustrates a block diagram of a spectrum analysis device according to an embodiment of the present application.

Fig. 9 illustrates a schematic diagram of a modified implementation of the spectrum chip according to an embodiment of the present application.

FIG. 10 illustrates a schematic diagram of a photosensitive assembly according to an embodiment of the present application.

Fig. 11 illustrates a schematic diagram of a modified implementation of the photosensitive assembly according to an embodiment of the present application.

Fig. 12 illustrates a schematic diagram of a spectrum chip according to an embodiment of the present application.

Fig. 13 illustrates a block diagram of the spectrum chip according to an embodiment of the present application.

Fig. 14 illustrates a schematic cross-sectional view of a light modulation structure according to an embodiment of the application.

15A to 15C illustrate schematic diagrams of the preparation method of the spectrum chip according to the embodiment of the present application.

16A to 16C illustrate schematic diagrams of the imposition preparation method of the spectrum chip according to the embodiment of the present application.

FIG. 17 illustrates a block diagram of a spectroscopic analysis device according to an embodiment of the present application.

Fig. 18 illustrates a schematic diagram of a modified implementation of the spectrum chip according to an embodiment of the present application.

FIG. 19 illustrates a schematic diagram of a photosensitive assembly according to an embodiment of the present application.

FIG. 20 shows a schematic diagram of a modified implementation of the photosensitive assembly according to an embodiment of the present application.

100: Sensing unit

110: modulation unit

111: Substrate

112: Light modulation structure

113: binding layer

120: medium layer

200: spectrum chip

Claims (17)

A method for preparing a spectrum chip, comprising: forming at least one light modulation structure on a substrate to obtain a modulation unit; and The modulating unit is coupled to a sensing unit, so that the modulating unit is held on a light-sensing path of the sensing unit to obtain a spectrum chip. The method for preparing a spectrum chip according to claim 1, wherein the at least one light modulation structure includes a first light modulation structure and a second light modulation structure; Wherein, forming the at least one light modulation structure on the substrate to obtain the modulation unit includes: forming a first light modulation layer on the substrate; Etching or nanoimprinting the first light modulation layer to form a first light modulation structure having at least one first modulation unit; forming a second light modulation layer on the first light modulation structure; and Etching or nanoimprinting is performed on the second light modulation layer to form a second light modulation structure with at least one second modulation unit. The method for preparing a spectrum chip according to claim 2, wherein the at least one modulation unit includes a first light modulation structure; Wherein, forming the at least one light modulation structure on the substrate to obtain the modulation unit includes: forming a first light modulation layer on the substrate; and Etching or nanoimprinting is performed on the first light modulation layer to form a first light modulation structure with at least one first modulation unit. The method for preparing a spectrum chip according to claim 2, wherein forming the second light modulation layer on the first light modulation structure includes: forming a connection layer on the first light modulation layer; and The second light modulation layer is formed on the connection layer. The preparation method of the spectrum chip according to claim 1, wherein the modulation unit is coupled to a sensing unit, so that the modulation unit is kept on the photosensitive path of the sensing unit to obtain the spectrum chip ,include: The modulation unit is coupled to the sensing unit in a flip-chip manner, wherein at least one light modulation structure of the modulation unit is stacked on the sensor. The preparation method of the spectrum chip according to claim 5, wherein the modulation unit is coupled to the sensing unit in a flip-chip manner, including: forming a dielectric layer on the sensing unit; and The modulation unit is coupled to the medium layer. The method for preparing a spectrum chip according to claim 6, wherein coupling the modulation unit to the dielectric layer includes: forming a bonding layer on the at least one light modulation structure of the modulation unit; The modulation unit is coupled to the medium layer in such a manner that the combination layer is combined with the medium layer. The preparation method of the spectrum chip according to claim 1, wherein the modulation unit is coupled to the sensing unit, so that the modulation unit is kept on the photosensitive path of the sensing unit to obtain the spectrum chips, including: attaching the modulation unit to the sensing unit by van der Waals forces; or attaching the modulation unit to the sensing unit by an adhesive; or The modulating unit is attached to the sensing unit by bonding technology. The method for preparing a spectrum chip according to claim 6, wherein, in the at least one light modulation structure, the lower surface of the light modulation structure adjacent to the sensing unit is between the upper surface of the dielectric layer The distance is less than or equal to 10um. The method for preparing a spectrum chip according to claim 9, wherein, in the at least one light modulation structure, the lower surface of the light modulation structure adjacent to the sensing unit is between the upper surface of the dielectric layer The proportion of the distance exceeding the preset threshold value is less than or equal to 10%. The method for preparing a spectrum chip according to claim 10, wherein, in the at least one light modulation structure, the lower surface of the light modulation structure adjacent to the sensing unit is between the upper surface of the dielectric layer The distance difference between each corresponding position is lower than 10um. The method for preparing a spectrum chip according to claim 6, wherein the light modulation structure includes at least one light modulation unit, wherein the light modulation structure adjacent to the sensing unit in the at least one light modulation structure The distance between the lower surface of the dielectric layer and the upper surface of the dielectric layer is less than or equal to the side length of the light modulation unit. The preparation method of the spectrum chip according to claim 6, wherein, in the at least one light modulation structure, any two regions of the lower surface of the light modulation structure adjacent to the sensing unit are connected to the medium The difference in the distance between corresponding two regions in the upper surface of the layer is less than or equal to 10 μm. The preparation method of a spectrum chip according to claim 1, wherein the light modulation structure includes a modulation part and a non-modulation part. The manufacturing method of a spectrum chip according to claim 14, wherein the modulation part includes at least one light modulation unit, and the non-modulation part includes at least one light filter unit. The method for preparing a spectrum chip according to claim 15, wherein forming the at least one light modulation structure on the substrate to obtain the modulation unit includes: forming a first material region and a second material region on the substrate; processing the first material region to form the modulated portion; and The second material region is processed to form the non-modulated portion. A spectrum chip, wherein it is prepared by the preparation method of the spectrum chip described in any one of Claims 1 to 16.

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