TW202236680A - Recycleing and clamping the reflected voltage in cascode gan hemt devices - Google Patents
Recycleing and clamping the reflected voltage in cascode gan hemt devices Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
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Abstract
Description
本發明係關於一種電源開關電路,尤指一種由D型氮化鎵高電子移動速度電晶體和N型金氧半場效電晶體組成疊加結構的電源開關電路。The invention relates to a power switch circuit, in particular to a power switch circuit with a superimposed structure composed of a D-type gallium nitride high electron moving speed transistor and an N-type metal oxide half field effect transistor.
III-V族化合物由於其半導體特性而可應用於形成許多種類的積體電路裝置,例如高功率電晶體、高電壓電晶體、高頻電晶體或高電子遷移率電晶體 (high electron mobility transistor,HEMT)。近年來,氮化鎵(GaN)系列的材料由於擁有較寬能隙與高飽和速率的特點而適合應用於高功率與高頻率產品。III-V compounds can be applied to form many kinds of integrated circuit devices due to their semiconductor properties, such as high-power transistors, high-voltage transistors, high-frequency transistors or high electron mobility transistors (high electron mobility transistors, HEMT). In recent years, gallium nitride (GaN) series materials are suitable for high power and high frequency products due to their wide energy gap and high saturation rate.
然而,對於D型(Depletion-mode;D-mode)氮化鎵高電子移動速度電晶體(Gallium Nitride High Electron Mobility Transistor,GaN-HEMT)來說,由於其具有常開(normally on)的特性,而難以被直接用來做為電源開關。因此,如何善用D型氮化鎵高電子移動速度電晶體的特性,同時避免其常開特性產生的問題,也就成為業界關注的課題之一。However, for D-type (Depletion-mode; D-mode) Gallium Nitride High Electron Mobility Transistor (GaN-HEMT), due to its normally on (normally on) characteristics, It is difficult to be directly used as a power switch. Therefore, how to make good use of the characteristics of D-type GaN transistors with high electron movement speed while avoiding the problems caused by its normally-on characteristics has become one of the topics that the industry pays attention to.
因此,本發明之主要目的即在於提供一種電源開關電路,其可調節內部節點的電壓,以避免電源開關電路的損害。Therefore, the main objective of the present invention is to provide a power switch circuit that can adjust the voltage of internal nodes to avoid damage to the power switch circuit.
本發明提供一種電源開關電路,包含一內部節點;一第一場效電晶體,包含有一第一汲極,一第一閘極,以及一第一源極;一第二場效電晶體,包含有一第二汲極,一第二閘極,以及一第二源極,其中該第一汲極耦接一電壓供應端,該第一閘極耦接該第二源極,該第一源極耦接,該第二汲極耦接該內部節點,及該第二源極耦接一接地電壓;以及一調節電路,耦接於該內部節點,該調節電路被配置成用以在該電源開關電路啟動後,調節該內部節點的一電壓值。The present invention provides a power switch circuit, including an internal node; a first field effect transistor, including a first drain, a first gate, and a first source; a second field effect transistor, including There is a second drain, a second gate, and a second source, wherein the first drain is coupled to a voltage supply end, the first gate is coupled to the second source, and the first source coupling, the second drain is coupled to the internal node, and the second source is coupled to a ground voltage; and a regulating circuit is coupled to the internal node, and the regulating circuit is configured to be used in the power switch After the circuit is started, a voltage value of the internal node is adjusted.
在說明書及後續的申請專利範圍當中使用了某些詞彙來指稱特定的元件。所屬領域中具有通常知識者應可理解,硬體製造商可能會用不同的名詞來稱呼同一個元件。本說明書及後續的申請專利範圍並不以名稱的差異來做為區分元件的方式,而是以元件在功能上的差異來做為區分的準則。在通篇說明書及後續的申請專利範圍當中所提及的「包含」係為一開放式的用語,故應解釋成「包含但不限定於」。此外,「耦接」一詞在此係包含任何直接及間接的電氣連接手段。因此,若文中描述一第一裝置耦接於一第二裝置,則代表該第一裝置可直接電氣連接於該第二裝置,或透過其他裝置或連接手段間接地電氣連接至該第二裝置。Certain terms are used in the specification and subsequent claims to refer to particular elements. It should be understood by those skilled in the art that hardware manufacturers may use different terms to refer to the same component. This description and subsequent patent applications do not use the difference in name as a way to distinguish components, but use the difference in function of components as a criterion for distinguishing. The "comprising" mentioned in the entire specification and the subsequent claims is an open term, so it should be interpreted as "including but not limited to". In addition, the term "coupled" herein includes any direct and indirect means of electrical connection. Therefore, if it is described that a first device is coupled to a second device, it means that the first device may be directly electrically connected to the second device, or indirectly electrically connected to the second device through other devices or connection means.
請參考第1圖,第1圖為疊加結構的一電源開關電路1的示意圖。電源開關電路1包含一第一場效電晶體100以及一第二場效電晶體102,其分別是一D型氮化鎵高電子移動速度電晶體及一N型金氧半場效電晶體,封裝於一第一封裝模組10中。D型氮化鎵高電子移動速度電晶體100的源極和N型金氧半場效電晶體102的汲極形成一內部節點104,且D型氮化鎵高電子移動速度電晶體100的閘極耦接N型金氧半場效電晶體102的源極。第一封裝模組10包含一高壓端106、一低壓端108以及一控制端110,分別耦接D型氮化鎵高電子移動速度電晶體100的汲極、N型金氧半場效電晶體102的閘極以及N型金氧半場效電晶體102的源極。在一實施例中,高壓端106耦接一高壓電源以及低壓端108耦接一接地電壓GND或一電流感測元件,其中電流感測元件的另一端耦接接地電壓GND,控制端110接收一控制訊號以控制電源開關電路1運作。當D型氮化鎵高電子移動速度電晶體100及N型金氧半場效電晶體102都截止且高壓端106接收的高壓電源電壓上升時,內部節點104可能出現異常高的電壓,因而造成內部節點104過壓的問題。例如,N型金氧半場效電晶體102的汲極對源極電壓V
DS過大造成硬崩潰(hard breakdown);或者,D型氮化鎵高電子移動速度電晶體100的閘極對源極電壓V
GS超出絕對額定電壓而造成閘極結構崩壞。因此,由於內部節點104 的過壓問題,使得電源開關電路1在額定電壓與負載功率下無法正常工作。
Please refer to FIG. 1 , which is a schematic diagram of a
為了改善電源開關電路1的缺點,本發明利用整形和整流的方式以降低內部節點104的電壓。In order to improve the shortcoming of the
詳細來說,請參考第2圖,第2圖為本發明實施例的一電源開關電路2的示意圖。電源開關電路2係由電源開關電路1所衍生,故相同元件以相同符號表示。與電源開關電路1不同之處在於,電源開關電路2的D型氮化鎵高電子移動速度電晶體100及N型金氧半場效電晶體102係封裝於一第二封裝模組20中,而第二封裝模組20相較於第一封裝模組10另透過一調節端200耦接內部節點104與一調節電路30。經由調節端200,調節電路30可調節內部節點104的電壓,以確保電源開關電路2可正常運作。For details, please refer to FIG. 2 , which is a schematic diagram of a
具體來說,在電源開關電路2中,當D型氮化鎵高電子移動速度電晶體100及N型金氧半場效電晶體102都截止且高壓端106接收的高壓電源電壓上升時,調節電路30可調節內部節點104的電壓。例如,調節電路30利用整形和整流的方式以降低內部節點104的電壓。如此一來,調節電路30可避免當D型氮化鎵高電子移動速度電晶體100及N型金氧半場效電晶體102都截止且高壓端106接收的高壓電源電壓上升時,內部節點104可能出現異常高的電壓。在一實施例中,D型氮化鎵高電子移動速度電晶體100及N型金氧半場效電晶體102亦可分別為一獨立封裝模組並組成電源開關電路2,電源開關電路2的運作在此不再贅述。在另一實施例中,電源開關電路2亦可由D型氮化鎵高電子移動速度電晶體和一E型氮化鎵高電子移動速度電晶體或N型金氧半場效電晶體和N型金氧半場效電晶體所組成,電源開關電路2的運作在此亦不再贅述。Specifically, in the
需注意的是,凡可達到前述適時調節內部節點104的電壓的電路皆可用來實現調節電路30。舉例來說,請參考第3圖,第3圖為第2圖中調節電路30之一實施例的示意圖。在此實施例中,調節電路30包含有一二極體D1、電阻R1、R2及電容C1、C2、C3。電容C1、C2、二極體D1的陰極及電阻R2耦接於一調節節點N,電容C1耦接電阻R1,電阻R2及電容C3耦接於一公共電壓Vcc,電容C2、C3耦接於接地電壓,電阻R1及二極體D1的陽極耦接至調節端200。藉由第3圖之調節電路30,當D型氮化鎵高電子移動速度電晶體100及N型金氧半場效電晶體102都截止且高壓端106接收的高壓電源電壓上升時,調節電路30透過調節端200以調節內部節點104的電壓,避免了N型金氧半場效電晶體102的汲極對源極電壓V
DS過大造成hard breakdown,或是D型氮化鎵高電子移動速度電晶體100的閘極對源極電壓V
GS超出絕對額定電壓而造成閘極結構崩壞。在一實施例中,當高壓端106接收的高壓電源電壓上升,使得當內部節點104的電壓的一直流成分或一交流成分高於公共電壓Vcc的電壓時,調節電路30以整流或整形的方式調節內部節點104的電壓,也就是說調節電路30箝制住了內部節點104的電壓。同時調節電路30在箝制內部節點104的電壓時亦可以對公共電壓Vcc充電,於是使得電源開關電路1在未調節內部節點104的電壓所內耗的能量得以回收,而提高了電源開關電路2的效率。
It should be noted that any circuit that can timely adjust the voltage of the
具體來說,請參考第4圖及第5圖,第4圖為電源開關電路1未透過調節端200調節內部節點104時內部節點104與高壓端106的電壓之示意圖。高壓端106接收的高壓電源電壓上升時,內部節點104出現異常高的電壓。會造成內部節點104過壓的問題。例如,N型金氧半場效電晶體102的汲極對源極電壓V
DS過大造成硬崩潰(hard breakdown);或者,D型氮化鎵高電子移動速度電晶體100的閘極對源極電壓V
GS超出絕對額定電壓而造成閘極結構崩壞。第5圖為電源開關電路2透過調節端200調節內部節點104時內部節點104與高壓端106的電壓之示意圖。高壓端106接收的高壓電源電壓上升時,內部節點104的電壓不會如第4圖中所示跟隨高壓電源電壓產生異常高的電壓,因此避免了N型金氧半場效電晶體102的汲極對源極電壓V
DS過大造成hard breakdown,或是D型氮化鎵高電子移動速度電晶體100的閘極對源極電壓V
GS超出絕對額定電壓而造成閘極結構崩壞。
Specifically, please refer to FIG. 4 and FIG. 5 . FIG. 4 is a schematic diagram of the voltages of the
綜上所述,本發明實施例透過調節電路調節電源開關電路的內部節點的電壓,使得電源開關電路運作時,內部節點的電壓在合適的範圍內,因此電源開關電路在額定電壓與負載功率下可以正常工作,並且降低電源開關電路的損耗與提昇電源開關電路的效率。在D型氮化鎵高電子移動速度電晶體及N型金氧半場效電晶體組成疊加結構的電源開關電路中,本發明透過調節電路調節電源開關電路的內部節點,也降低了D型氮化鎵高電子移動速度電晶體及N型金氧半場效電晶體匹配上的困難性。 以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。 To sum up, the embodiment of the present invention adjusts the voltage of the internal node of the power switch circuit through the regulating circuit, so that when the power switch circuit operates, the voltage of the internal node is within an appropriate range, so the power switch circuit operates under rated voltage and load power. It can work normally, and reduce the loss of the power switch circuit and improve the efficiency of the power switch circuit. In a power switch circuit with a superimposed structure composed of D-type gallium nitride high electron moving speed transistors and N-type metal oxide semi-field effect transistors, the present invention adjusts the internal nodes of the power switch circuit through the regulating circuit, and also reduces the D-type gallium nitride Difficulties in matching gallium high electron movement speed transistors and N-type metal oxide half field effect transistors. The above descriptions are only preferred embodiments of the present invention, and all equivalent changes and modifications made according to the scope of the patent application of the present invention shall fall within the scope of the present invention.
1、2:電源開關電路
10、20:封裝模組
30:調節電路
100:D型氮化鎵高電子移動速度電晶體
102:N型金氧半場效電晶體
104:內部節點
R1、R2:電阻
C1、C2、C3:電容
D1:二極體
1, 2:
第1圖為習知疊加結構的一電源開關電路的示意圖。 第2圖為本發明實施例的一電源開關電路的示意圖。 第3圖為本發明一實施例調節電路的示意圖。 第4圖為本發明一實施例的電源開關電路內部節點與高壓端的電壓示意圖。 第5圖為本發明另一實施例的電源開關電路內部節點與高壓端的電壓示意圖。 FIG. 1 is a schematic diagram of a power switch circuit with a conventional superposition structure. FIG. 2 is a schematic diagram of a power switch circuit according to an embodiment of the present invention. Fig. 3 is a schematic diagram of a regulating circuit according to an embodiment of the present invention. FIG. 4 is a schematic diagram of voltages of internal nodes and high voltage terminals of a power switch circuit according to an embodiment of the present invention. FIG. 5 is a schematic diagram of voltages of internal nodes and high voltage terminals of a power switch circuit according to another embodiment of the present invention.
2:電源開關電路 2: Power switch circuit
20:封裝模組 20: Encapsulation module
30:調節電路 30: Regulating circuit
100:D型氮化鎵高電子移動速度電晶體 100: D-type Gallium Nitride High Electron Movement Speed Transistor
102:N型金氧半場效電晶體 102: N-type metal oxide half field effect transistor
104:內部節點 104: internal node
106:高壓端 106: High voltage end
108:低壓端 108: Low voltage end
110:控制端 110: control terminal
Claims (7)
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US17/543,749 US20220286125A1 (en) | 2021-03-04 | 2021-12-07 | Recycling and clamping reflected voltages in cascode gan hemt devices |
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US202163156905P | 2021-03-04 | 2021-03-04 | |
US63/156,905 | 2021-03-04 |
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