TW202234070A - Calibration structure and calibration method for double-sided probing measurement - Google Patents

Abstract

A calibration structure and calibration method for double-sided probing measurement apply the novel unknown-Thru-Reflect-Line (uTRL) calibration technology to the double-sided probe measurement environment and measure the dual-port scattering parameter of the double-sided probe on the vertical connection structure of the planar circuit to improve the problem of poor high-frequency performance of SOLR, so as to accurately extract the real high-frequency characteristic parameters of the three-dimensional vertical connection structure.

Description

Double-sided probe measurement and correction structure and correction method

The invention relates to a double-sided probe measurement and calibration structure and calibration method, in particular to a new unknown-Thru-Reflect-Line (uTRL) microwave measurement and calibration technology, which is used for the vertical connection structure of a planar circuit. Carry out the measurement of the double-port scattering parameters of the double-sided probe. This case can be used to measure the characteristics of fine vertical wiring structures such as semiconductor through-silicon, glass through-hole, or printed circuit board electroplating through-holes. It can also be used for 3D-IC or high-density packaging. and other precision electronics industries to provide more reliable verification tools for high-speed/high-frequency development.

For the inspection of the printed circuit board (PCB) or the carrier board carrying a plurality of integrated circuit (IC) components, a single-sided probe inspection equipment is usually used for inspection. The surface probe testing equipment includes a carrier board and a plurality of probes. The plurality of probes are arranged on the carrier board in a spaced arrangement. One end of the plurality of probes has a needle. The user first conducts a high-frequency signal on the plurality of probes. After calibration, the plurality of needles of the single-sided probe testing equipment are brought into contact with the carrier board to be tested for electrical connection, that is, the purpose of testing the carrier boards of the plurality of integrated circuit components is achieved.

Due to the rapid development of the semiconductor industry, the operating bandwidth and the working speed are getting faster and faster. In order to achieve this demand, it is necessary to shorten the integrated circuit transmission path as much as possible. Therefore, most of the integrated circuit components are placed on a package board and Corresponding circuit layout is carried out, so that a plurality of solder pads with integrated circuit components are mounted on the top surface of the package carrier, and the signal output terminals of the circuit layout are rearranged on the bottom surface of the package carrier, so that the signal transmission path can be located in the package. The solder pads on the top surface of the carrier board are transmitted to the signal output terminals on the bottom surface of the package carrier board. However, the single-sided probe testing equipment cannot perform double-sided testing, so the top and bottom surfaces of the package carrier board cannot be tested. Double-sided inspection.

Therefore, for such a situation, a vertical double-sided inspection equipment has been developed, which is used to mount the package carrier with a plurality of solder pads on the carrier, so that the package carrier is in a vertical state, and the two probes The seat controls the two probes to detect on both sides of the package carrier board, so as to achieve the purpose of simultaneously testing both sides of the package carrier board.

When this type of vertical double-sided inspection equipment is used for high-frequency signal correction, due to the traditional double-sided probe point touch scattering parameter correction, a double-sided probe machine with Short-Open-Load-Reciprocal (SOLR) measurement is required. The scattering parameters of the vertical connection structure are measured to 40 GHz. However, the standard components such as Short, Open, Load, etc. that SOLR relies on are not easy to achieve accurate characteristics in the frequency band above the millimeter wave, which greatly reduces the calibration accuracy. Therefore, this calibration method is very inefficient. Suitable for frequency bands above millimeter wave.

In view of the above problems, the patent of the present invention applies the newly created unknown-Thru-Reflect-Line (uTRL) correction technology to the double-sided probe measurement environment to improve the problem of poor high-frequency performance of SOLR, so as to accurately extract the three-dimensional vertical connection Therefore, the present invention should be an optimal solution.

A double-sided probe measurement and correction structure is disposed on a double-sided substrate, wherein the double-sided substrate includes a first substrate and a second substrate, and the double-sided probe measurement and correction structure includes: a The unknown penetration correction element penetrates the double-sided substrate and is arranged on the first substrate and the second substrate of the double-sided substrate; a top surface correction group includes at least one line top surface correction element and a reflection A top surface correction member, wherein the line top surface correction member and the reflection top surface correction member are arranged on the first substrate and the second substrate of the double-sided substrate, and the line top surface correction member and the reflection top surface correction member A first measurement reference surface is arranged at the first substrate area of the double-sided substrate, and the first measurement reference surface of the reflective top surface correction element is a disconnected line segment; and a bottom surface correction group, It includes at least one line bottom correction piece and a reflection bottom correction piece, wherein the line bottom correction piece and the reflection bottom correction piece are arranged on the first substrate and the second substrate of the double-sided substrate, and the line bottom correction A second measurement reference surface is arranged at the second substrate area of the double-sided substrate, and the second measurement reference surface of the reflection bottom correction member is a disconnected line segment.

More specifically, the unknown penetration correction element, the line top correction element, the reflection top correction element, the line bottom correction element and the reflection bottom correction element are all formed by transmission lines, and the transmission lines can be coplanar waveguides. or microstrip.

More specifically, the double-sided substrate can be a silicon substrate, a compound semiconductor substrate, a ceramic substrate or an epoxy glass fiber board substrate.

More specifically, the unknown penetration correction member also has a first measurement reference surface and a second measurement reference surface, wherein the first measurement reference surface is located on the unknown penetration correction member arranged on the double The second measurement reference surface is located at the first substrate area of the double-sided substrate, and the unknown penetration correction element is arranged at the second substrate area of the double-sided substrate.

More specifically, the length of the line top surface correction member located on the second substrate is the same as the length of the reflection top surface correction member located on the second substrate.

More specifically, the length of the line bottom correction member on the first substrate is the same as the length of the reflection bottom correction member on the first substrate.

A method for measuring and correcting a double-sided probe, the steps of which are: (1) An unknown penetration correction element has a first measurement reference surface and a second measurement reference surface; (2) Using the first measurement reference surface to perform the first calibration through the unknown penetration calibration part, at least one line top surface calibration part and a reflection top surface calibration part; (3) Using the second measurement reference surface to perform the second calibration through the unknown penetration correction element, at least one line bottom correction element and a reflection bottom correction element; and (4) According to the results of the first calibration and the second calibration, calculate the scattering parameters.

More specifically, in the calibration process, the electromagnetic properties of the unknown penetration calibration element need not be used.

Other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of the preferred embodiments with reference to the drawings.

Please refer to Figure 1, which is a schematic diagram of the application of the uTRL correction component to the vertical connection structure. This application proposes unknown-THRU, TOP-LINE, TOP-REFLECT, BOTTOM-LINE, BOTTOM-REFLECT correction components with unknown vertical structures It is designed as a one-stage double-sided probe microwave/millimeter wave scattering parameter measurement and correction method. This calibration can be used on semiconductor (silicon, glass, GaAs, etc.) substrates or printed circuit boards;

As shown in FIG. 1, the present case is disposed on a double-sided substrate 1 (which can be a silicon substrate, a compound semiconductor substrate, a ceramic substrate or an epoxy glass fiber board substrate), wherein the double-sided substrate 1 includes a first The substrate 101 and a second substrate 102, and the double-sided probe measurement and calibration structure is described as follows: (1) An unknown penetration correction element unknown-THRU includes a first line segment 111 and a second line segment 112, and the first line segment 111 and the second line segment 112 are connected and penetrate the double-sided substrate 1, and Disposed on the first substrate 101 and the second substrate 102 of the double-sided substrate 1 , wherein the unknown penetration correction element has a first measurement reference plane 113 (Reference plane-1) and a second measurement reference surface 114 (Reference plane-2), and the penetration range 115 is the distance between the first measurement reference surface 113 and the second measurement reference surface 114, wherein the double-sided probes (Top probe and bottom The bottom probe touches the first line segment 111 and the second line segment 112 respectively (the position of the first measurement reference surface 113 and the position of the second measurement reference surface 114 are with minimum penetration The range 115 is for design consideration, and different substrates and different processes have different design results). (2) A top surface correction group, including: (a) A line top surface correction component TOP-LINE includes a first line segment 121 and a second line segment 122, and the first line segment 121 and the second line segment 122 are connected and penetrate the double-sided substrate 1, and It is arranged on the first substrate 101 and the second substrate 102 of the double-sided substrate 1, and the first line segment 121 has a first measurement reference surface 123, wherein the first measurement reference surface 123 is a connecting line segment , wherein the position of the first measurement reference surface 123 is based on the first measurement reference surface 113 of the unknown penetration correction element unknown-THRU, and a quarter-wavelength top surface line segment is added, and this wavelength is the measurement bandwidth The wavelength of the top line segment at the center frequency. (b) A reflective top surface correction component TOP-REFLECT includes a first line segment 131 and a second line segment 132, and the first line segment 131 and the second line segment 132 are disconnected in the middle, and the first line segment 131 and the second line segment 132 are respectively arranged on the first substrate 101 and the second substrate 102 of the double-sided substrate 1, and a first measurement reference is provided within the disconnected range of the first line segment 131 and the second line segment 132 Surface 133, wherein the first measurement reference surface 133 is a disconnected line segment, wherein the position of the first measurement reference surface 133 is based on the distance that the signal coupling between the two ends of the reflective top surface correction element TOP-REFLECT reaches a negligible distance. . (3) A bottom surface correction group, including: (a) A line bottom correction component BOTTOM-LINE includes a first line segment 141 and a second line segment 142, and the first line segment 141 and the second line segment 142 are connected and penetrate the double-sided substrate 1, and are arranged On the first substrate 101 and the second substrate 102 of the double-sided substrate 1, there is a second measurement reference surface 143 within the range of the first line segment 141, wherein the second measurement reference surface 143 is a connecting line segment, The position of the second measurement reference surface 143 is based on the second measurement reference surface 114 of the unknown penetration correction element unknown-THRU, and a quarter-wavelength bottom surface line segment is added, and this wavelength is the measurement bandwidth center frequency The wavelength of the bottom line segment. (b) A reflective bottom correction component BOTTOM-REFLE14CT includes a first line segment 151 and a second line segment 152, and the first line segment 151 and the second line segment 152 are disconnected in the middle, and the first line segment 151 The second line segment 152 and the second line segment 152 are respectively arranged on the first substrate 101 and the second substrate 102 of the double-sided substrate 1 , and a second measurement reference surface is provided in the range where the first line segment 151 and the second line segment 152 are disconnected. 153, wherein the second measurement reference surface 153 is a disconnected line segment, wherein the position of the second measurement reference surface 153 is based on the signal coupling between the two ends of the reflection bottom correction element BOTTOM-REFLECT reaching a negligible distance.

The unknown penetration correction element, the line top correction element, the reflection top correction element, the line bottom correction element and the reflection bottom correction element are all formed by transmission lines, and the transmission lines can be coplanar waveguides or microstrip lines .

The length of the second line segment 122 of the line top surface correction element located on the second substrate 102 is the same as the length of the third line segment 132 of the reflection top surface correction element located on the second substrate 102 .

The length of the first line segment 141 of the line bottom correction element located on the first substrate 101 is the same as the length of the first line segment 151 of the reflection bottom correction element located on the first substrate 101 .

In this case, through-silicon or through-glass interposer structure, which is common in chip packaging technology, is used. As shown in Figure 1, the through-hole is not an ideal cylindrical shape due to process factors, and it is conical. Differences, related material parameters - including medium or metal are also very complex, complete and accurate 3D electromagnetic simulation analysis is not easy to achieve, only accurate measurement data can be used as the basis to adjust and optimize the simulation parameters. Then construct its complete circuit model, and finally evaluate the system performance of the entire chip/package, such as the eye diagram of high-speed digital transmission or the antenna radiation pattern and gain on the package structure, etc. Such a complete design environment still needs A solid measurement and verification can be used as the basis to compete. The patent of the present invention proposes a calibration measurement method for this special measurement requirement to obtain its accurate high-frequency electrical characteristics, so as to facilitate subsequent analysis and simulation.

As shown in Figures 2A and 2B, the front and back of the embodiment of the present case are designed with calibration elements on the first substrate 21 and the second substrate 22 of a double-sided substrate 2. In this embodiment, grounded coplanar waveguides are used. Coplanar Waveguide, GCPW) is a transmission line structure. Since the general TRL calibration has a 1:8 bandwidth limit, if you want to perform broadband measurement, you need to design multiple transmission lines with different lengths (Line1, line2 and Line3 are used in this embodiment. ), so multiple sets of line top corrections and line bottom corrections can be used, and the corrections in this embodiment are as follows: (1) Unknown penetration correction: unknown Thru (2) Line top correction parts: Calkit_Top_Line1, Calkit_Top_Line2, Calkit_Top_Line3 (3) Reflection top correction: Calkit_Top_Open (4) Line bottom correction parts: Calkit_Bottom_Line1, Calkit_Bottom_Line2, Calkit_Bottom_Line3 (5) Reflection bottom correction part: Calkit_Bottom_Open

In this embodiment, Line1, Line2, and Line3 are 14 mm, 4.2 mm, and 1.3 mm longer than Thru, respectively, while the Reflect calibration components (Top_Open and Bottom_Open) use open-circuit types. Because of their process accuracy, the probes with a pitch of 400 mm are used. design, so the measurement frequency is only up to 40 GHz.

The double-sided probe measurement and calibration method in this case is shown in Figure 3. The steps are: (1) An unknown penetration correction element has a first measurement reference surface and a second measurement reference surface 301; (2) Using the first measurement reference plane to perform a first TRL (Thru-Reflect-Line) correction 302 through the unknown penetration correction element, at least one line top correction element and a reflection top correction element; (3) Using the second measurement reference plane to perform a second TRL (Thru-Reflect-Line) correction 303 through the unknown penetration correction element, at least one line bottom correction element and a reflection bottom correction element in combination; and (4) According to the results of the first calibration and the second calibration, the calculation 304 of the scattering parameters is performed.

，設量測參考平面為Reference-top（第一量測參考面）； (2)     取unknown-THRU（未知穿透）, LINE-TOP（線路頂面）, REFLECT-TOP（反射頂面）校正件之量測雙埠散射參數進行TRL（Thru-Reflect-Line）校正，得到上層傳輸線傳播常數

與埠端1之誤差盒矩陣

； (3)    求取上層傳輸線特性阻抗

，將誤差盒矩陣

進行阻抗轉換成為

； (4)    設量測參考阻抗為下層傳輸線

，設量測參考平面為Reference-bottom（第二量測參考面）； (5)     取unknown-THRU（未知穿透）, LINE-BOTTOM（反射底面）, REFLECT-BOTTOM（反射底面）校正件之量測雙埠散射參數進行TRL（Thru-Reflect-Line）校正，得到下層傳輸線傳播常數

與埠端2之誤差盒矩陣

； (6)    求取下層傳輸線特性阻抗

，將誤差盒矩陣

進行阻抗轉換成為

； (7)     計算unknown-THRU（未知穿透）雙埠散射參數 ^*****； (8)     結束。 The calculation process of this case is shown in Figure 4. The steps are: (1) At the beginning, set the measurement reference impedance as the upper transmission line

, let the measurement reference plane be Reference-top (the first measurement reference plane); (2) Take unknown-THRU (unknown penetration), LINE-TOP (line top surface), REFLECT-TOP (reflection top surface) correction Perform TRL (Thru-Reflect-Line) correction on the measured dual-port scattering parameters of the device to obtain the propagation constant of the upper transmission line

Error box matrix with port 1

; (3) Calculate the characteristic impedance of the upper transmission line

, the error box matrix

Impedance conversion is performed to become

; (4) Set the measurement reference impedance as the lower transmission line

, let the measurement reference plane be Reference-bottom (the second measurement reference plane); (5) Take unknown-THRU (unknown penetration), LINE-BOTTOM (reflection bottom surface), and REFLECT-BOTTOM (reflection bottom surface) correction parts Measure the two-port scattering parameters and perform TRL (Thru-Reflect-Line) correction to obtain the propagation constant of the lower transmission line

Error box matrix with port 2

; (6) Obtain the characteristic impedance of the lower transmission line

, the error box matrix

Impedance conversion is performed to become

; (7) Calculate unknown-THRU (unknown penetration) dual-port scattering parameters ^***** ; (8) End.

，

若基板介電損耗較高，可用二階段式校正比較法求特性阻抗值。 For the above ^* , if the dielectric loss of the substrate is quite low, the upper transmission line must have a series resistance test piece whose characteristic impedance value is:

,

If the dielectric loss of the substrate is high, the characteristic impedance value can be obtained by the two-stage correction and comparison method.

，

，

And the above ^** , the error box cascade matrix (Cascading matrix) conversion relationship is:

,

,

，

； 若基板介電損耗較高，可用二階段式校正比較法求特性阻抗值。 As for the above ^*** , if the dielectric loss of the substrate is quite low, the lower transmission line must have a series resistance test piece, and its characteristic impedance value is:

,

; If the dielectric loss of the substrate is high, the characteristic impedance value can be obtained by the two-stage correction and comparison method.

And the above ^**** , the error box cascade matrix (Cascading matrix) conversion relationship is:

，其中[ E _{A,top /bottom} ]分別為正／背面校正後在埠端1以50Ω為參考阻抗之雙埠誤差盒串接矩陣，[ U] 串接矩陣可直接轉換至散射參數，而誤差盒

內容為

未知矩陣[ U]為

其中

於校正完後即求得，而

也因[ U]為互易性網路，行列式為1的特性而可推得其值為

。 And the above ^***** , the error box solved by the two calibration programs and the unknown vertical connection structure have a concatenated matrix relationship as follows:

, where [ E _{A,top /bottom} ] is the two-port error box concatenation matrix with 50Ω as the reference impedance at port 1 after front/back correction respectively, [ U ] The concatenated matrix can be directly converted to scattering parameters, and the box

Content is

The unknown matrix [ U ] is

in

is obtained after calibration, and

Also because [ U ] is a reciprocity network and the determinant is 1, it can be inferred that its value is

.

In this case, the measurement results of the grounded Coplanar Waveguide (GCPW) of the transmission line of the calibration component are shown in Figures 5 and 6 , of which Figure 5 is the propagation constant, including the transmission attenuation per millimeter (mm). Attenuation constant, and equivalent dielectric constant, which is defined as the square of the ratio of the speed of light to the phase velocity of the transmission line (Phase velocity), and Figure 6 shows the characteristic impedance of the transmission line, including real and imaginary parts.

In this case, the measurement results of unknown-THRU (unknown penetration) after the perforation correction of the printed circuit board are shown in Figures 7 and 8, of which Figure 7 is the reflection coefficient, including the magnitude (in decibels) and the phase. angle (in degrees), and Figure 8 shows the transmission coefficient, including magnitude (in decibels) and phase angle (in degrees).

When compared with other conventional technologies, the double-sided probe measurement and calibration structure and calibration method provided by the present invention have the following advantages: (1) The present invention uses the newly created unknown-Thru-Reflect-Line (uTRL) microwave measurement and correction technology to measure the two-port scattering parameters of the double-sided probe on the vertical connection structure of the planar circuit, and the vertical connection The electromagnetic properties of the wire structure do not need to be known in advance, and can be deduced after the calibration is completed. (2) The present invention can be used to measure the characteristics of fine vertical wiring structures such as semiconductor through-silicon, glass through-hole or printed circuit board electroplating through-holes, etc., and provides high-speed/high-frequency development for precision electronic industries such as 3D-IC or high-density packaging. More reliable verification tools. (3) The present invention can perform calibration measurement for the measurement of high-frequency characteristics of wafer-level vertical structure components such as TSVs, TSVs, and PCB blind/through holes, etc. Printed circuit board manufacturers are very important, and Taiwan has the world's largest wafer foundries TSMC and UMC, packaging and testing companies ASE and Silicon Products, and printed circuit board manufacturers Zhending, etc., which is conducive to the promotion and application of this patent. (4) Because the traditional double-sided probe point touch scattering parameter calibration requires accurate Short, Open, Load and other standard components, and the above standard components are not easy to achieve accurate characteristics in the frequency band above the millimeter wave, which makes the calibration accuracy It is greatly reduced, generally only 40 GHz can be used, but the patent of the present invention only needs to use the transmission line as a correction element, and can operate to a frequency band as high as 110 GHz. (5) In addition, the patent of the present invention is a one-stage type, which does not require pre-calibration procedures such as coaxial calibration parts or probe impedance standard plates, which can save a lot of test time and cost.

The present invention has been disclosed above through the above-mentioned embodiments, but it is not intended to limit the present invention. Anyone familiar with this technical field with ordinary knowledge can understand the aforementioned technical features and embodiments of the present invention without departing from the present invention. Within the spirit and scope, some changes and modifications can be made, so the scope of patent protection of the present invention shall be determined by the claims attached to this specification.

1: Double-sided substrate 11: Top probe 12: Bottom probe 101: The first substrate 102: Second substrate 111: The first line segment 112: Second line segment 113: The first measurement reference surface 114: The second measurement reference surface 115: Penetration range 121: The first line segment 122: Second line segment 123: The first measurement reference surface 131: first line segment 132: Second line segment 133: The first measurement reference surface 141: first line segment 142: Second line segment 143: The second measurement reference surface 151: first line segment 152: Second line segment 153: Second measurement reference surface 2: Double-sided substrate 21: The first substrate 22: Second substrate

[Fig. 1] is a schematic diagram of the application of the uTRL calibration element of the double-sided probe measurement calibration structure and calibration method of the present invention to a vertical connection structure. [FIG. 2A] is a schematic front view of the implementation substrate of the double-sided probe measurement and calibration structure and calibration method of the present invention. [FIG. 2B] is a schematic diagram of the backside of the substrate for the implementation of the double-sided probe measurement and calibration structure and calibration method of the present invention. [Fig. 3] is a schematic flow chart of the calibration method of the double-sided probe measurement calibration structure and calibration method of the present invention. [Fig. 4] is a schematic diagram of the relevant calculation flow of the double-sided probe measurement and calibration structure and calibration method of the present invention. [Fig. 5] is a schematic diagram of the measurement result of the propagation constant of the grounded coplanar waveguide (GCPW) of the calibration element transmission line of the double-sided probe measurement and calibration structure and calibration method of the present invention. [Fig. 6] is a schematic diagram of the characteristic impedance measurement result of the grounded coplanar waveguide (GCPW) of the transmission line of the calibration element of the double-sided probe measurement and calibration structure and calibration method of the present invention. [Fig. 7] is a schematic diagram of the measurement result of the reflection coefficient after the perforation correction of the printed circuit board of the double-sided probe measurement and correction structure and correction method of the present invention. [Fig. 8] is a schematic diagram of the measurement result of the transmission coefficient after the perforation correction of the printed circuit board of the double-sided probe measurement and correction structure and correction method of the present invention.

1: Double-sided substrate

11: Top probe

12: Bottom probe

101: The first substrate

102: Second substrate

111: The first line segment

112: Second line segment

113: The first measurement reference surface

114: The second measurement reference surface

115: Penetration range

121: The first line segment

122: Second line segment

123: The first measurement reference surface

131: first line segment

132: Second line segment

133: The first measurement reference surface

141: first line segment

142: Second line segment

143: The second measurement reference surface

151: first line segment

152: Second line segment

153: Second measurement reference surface

Claims (8)

A double-sided probe measurement and correction structure is disposed on a double-sided substrate, wherein the double-sided substrate includes a first substrate and a second substrate, and the double-sided probe measurement and correction structure includes: an unknown penetration calibration element penetrates the double-sided substrate and is disposed on the first substrate and the second substrate of the double-sided substrate; A top surface correction group includes at least one line top surface correction member and one reflection top surface correction member, wherein the line top surface correction member and the reflection top surface correction member are arranged on the first substrate and the double-sided substrate. On the second substrate, the circuit top surface correction member and the reflection top surface correction member are arranged on the first substrate area of the double-sided substrate, and a first measurement reference surface is provided, and the reflection top surface correction member has a first measurement reference surface. the first measurement reference plane is a broken line segment; and a bottom surface correction group comprising at least one line bottom surface correction member and one reflection bottom surface correction member, wherein the line bottom surface correction member and the reflective bottom surface correction member are arranged on the first substrate and the second substrate of the double-sided substrate, A second measurement reference surface is arranged at the area of the second substrate of the double-sided substrate of the circuit bottom surface correction member and the reflection bottom surface correction member, and the second measurement reference surface of the reflection bottom surface correction member is A disconnected line segment. The double-sided probe measurement and calibration structure according to claim 1, wherein the unknown penetration calibration component, the line top surface calibration component, the reflection top surface calibration component, the line bottom surface calibration component, and the reflection bottom surface calibration component are all formed by transmission lines. The transmission line can be a coplanar waveguide or a microstrip line. The double-sided probe measurement and calibration structure as claimed in claim 1, wherein the double-sided substrate can be a silicon substrate, a compound semiconductor substrate, a ceramic substrate or an epoxy glass fiber board substrate. The double-sided probe measurement and calibration structure according to claim 1, wherein the unknown penetration calibration member also has a first measurement reference surface and a second measurement reference surface, wherein the first measurement reference surface is The unknown penetration correction element is arranged at a first substrate area of the double-sided substrate, and the second measurement reference surface is located at a second substrate area of the double-sided substrate where the unknown penetration correction element is arranged. The double-sided probe measurement and calibration structure according to claim 1, wherein the length of the line top surface calibration member located on the second substrate is the same as the length of the reflection top surface calibration member located on the second substrate. The double-sided probe measurement and calibration structure as claimed in claim 1, wherein the length of the line bottom correction member located on the first substrate is the same as the length of the reflection bottom correction member located on the first substrate. A method for measuring and correcting a double-sided probe, the steps of which are: an unknown penetration calibration element has a first measurement reference surface and a second measurement reference surface; using the first measurement reference surface to perform the first calibration through the unknown penetration calibration part, at least one line top surface calibration part and a reflection top surface calibration part; using the second measurement reference surface to perform a second calibration through the unknown penetration calibration component, at least one line bottom surface calibration component, and a reflection bottom surface calibration component; and Then, according to the results of the first calibration and the second calibration, the calculation of the scattering parameters is performed. The double-sided probe measurement and calibration method according to claim 7, wherein in the calibration process, the electromagnetic characteristics of the unknown penetration calibration element need not be used.

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