TW202231650A - 表面處理劑、表面處理方法及基板表面之區域選擇性製膜方法 - Google Patents
表面處理劑、表面處理方法及基板表面之區域選擇性製膜方法 Download PDFInfo
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- TW202231650A TW202231650A TW110146521A TW110146521A TW202231650A TW 202231650 A TW202231650 A TW 202231650A TW 110146521 A TW110146521 A TW 110146521A TW 110146521 A TW110146521 A TW 110146521A TW 202231650 A TW202231650 A TW 202231650A
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- Prior art keywords
- surface treatment
- substrate
- alkyl group
- treatment agent
- group
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- 239000000758 substrate Substances 0.000 title claims abstract description 167
- 238000000034 method Methods 0.000 title claims abstract description 66
- 239000012756 surface treatment agent Substances 0.000 title claims abstract description 64
- 238000004381 surface treatment Methods 0.000 title claims description 40
- 150000001875 compounds Chemical class 0.000 claims abstract description 74
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 63
- 239000000463 material Substances 0.000 claims abstract description 32
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 31
- 239000002904 solvent Substances 0.000 claims abstract description 24
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 claims abstract description 17
- 125000001424 substituent group Chemical group 0.000 claims abstract description 16
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 12
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 9
- 239000010949 copper Substances 0.000 claims description 41
- 229910052802 copper Inorganic materials 0.000 claims description 36
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 33
- 238000000231 atomic layer deposition Methods 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 claims 2
- 239000000126 substance Substances 0.000 abstract description 16
- 238000012986 modification Methods 0.000 abstract description 3
- 230000004048 modification Effects 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 52
- 239000010410 layer Substances 0.000 description 43
- -1 isotridecyl Chemical group 0.000 description 42
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 42
- 230000000052 comparative effect Effects 0.000 description 27
- 239000007789 gas Substances 0.000 description 21
- 239000002253 acid Substances 0.000 description 18
- 238000007654 immersion Methods 0.000 description 17
- 239000012044 organic layer Substances 0.000 description 17
- 239000003513 alkali Substances 0.000 description 14
- 239000002243 precursor Substances 0.000 description 14
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 13
- 229910052715 tantalum Inorganic materials 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 12
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000003795 chemical substances by application Substances 0.000 description 8
- 238000007598 dipping method Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 239000007864 aqueous solution Substances 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- 238000001179 sorption measurement Methods 0.000 description 7
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 6
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 6
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005406 washing Methods 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- FTMKAMVLFVRZQX-UHFFFAOYSA-N octadecylphosphonic acid Chemical compound CCCCCCCCCCCCCCCCCCP(O)(O)=O FTMKAMVLFVRZQX-UHFFFAOYSA-N 0.000 description 5
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 4
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 4
- 230000001771 impaired effect Effects 0.000 description 4
- QJAOYSPHSNGHNC-UHFFFAOYSA-N octadecane-1-thiol Chemical compound CCCCCCCCCCCCCCCCCCS QJAOYSPHSNGHNC-UHFFFAOYSA-N 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- 125000000590 4-methylphenyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])[H] 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 description 3
- 125000001204 arachidyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 125000002511 behenyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 239000004305 biphenyl Substances 0.000 description 3
- 235000010290 biphenyl Nutrition 0.000 description 3
- 238000007664 blowing Methods 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 125000001153 fluoro group Chemical group F* 0.000 description 3
- 125000002960 margaryl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 125000001624 naphthyl group Chemical group 0.000 description 3
- 125000001196 nonadecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- BKIMMITUMNQMOS-UHFFFAOYSA-N nonane Chemical compound CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 3
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 125000002958 pentadecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 125000001792 phenanthrenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C=CC12)* 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 125000003944 tolyl group Chemical group 0.000 description 3
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 125000005023 xylyl group Chemical group 0.000 description 3
- RYNQKSJRFHJZTK-UHFFFAOYSA-N (3-methoxy-3-methylbutyl) acetate Chemical compound COC(C)(C)CCOC(C)=O RYNQKSJRFHJZTK-UHFFFAOYSA-N 0.000 description 2
- AUHZEENZYGFFBQ-UHFFFAOYSA-N 1,3,5-trimethylbenzene Chemical compound CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 2
- VKPSKYDESGTTFR-UHFFFAOYSA-N 2,2,4,6,6-pentamethylheptane Chemical compound CC(C)(C)CC(C)CC(C)(C)C VKPSKYDESGTTFR-UHFFFAOYSA-N 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 2
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 2
- RZKSECIXORKHQS-UHFFFAOYSA-N Heptan-3-ol Chemical compound CCCCC(O)CC RZKSECIXORKHQS-UHFFFAOYSA-N 0.000 description 2
- ZCZSIDMEHXZRLG-UHFFFAOYSA-N Heptyl acetate Chemical compound CCCCCCCOC(C)=O ZCZSIDMEHXZRLG-UHFFFAOYSA-N 0.000 description 2
- FFOPEPMHKILNIT-UHFFFAOYSA-N Isopropyl butyrate Chemical compound CCCC(=O)OC(C)C FFOPEPMHKILNIT-UHFFFAOYSA-N 0.000 description 2
- XOBKSJJDNFUZPF-UHFFFAOYSA-N Methoxyethane Chemical compound CCOC XOBKSJJDNFUZPF-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 239000013543 active substance Substances 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- XUPYJHCZDLZNFP-UHFFFAOYSA-N butyl butanoate Chemical compound CCCCOC(=O)CCC XUPYJHCZDLZNFP-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- NGAZZOYFWWSOGK-UHFFFAOYSA-N heptan-3-one Chemical compound CCCCC(=O)CC NGAZZOYFWWSOGK-UHFFFAOYSA-N 0.000 description 2
- AOGQPLXWSUTHQB-UHFFFAOYSA-N hexyl acetate Chemical compound CCCCCCOC(C)=O AOGQPLXWSUTHQB-UHFFFAOYSA-N 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 2
- 150000008624 imidazolidinones Chemical class 0.000 description 2
- PHTQWCKDNZKARW-UHFFFAOYSA-N isoamylol Chemical compound CC(C)CCO PHTQWCKDNZKARW-UHFFFAOYSA-N 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- SXQFCVDSOLSHOQ-UHFFFAOYSA-N lactamide Chemical class CC(O)C(N)=O SXQFCVDSOLSHOQ-UHFFFAOYSA-N 0.000 description 2
- 150000002596 lactones Chemical class 0.000 description 2
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- LPEKGGXMPWTOCB-UHFFFAOYSA-N methyl 2-hydroxypropionate Chemical compound COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 2
- YRHYCMZPEVDGFQ-UHFFFAOYSA-N methyl decanoate Chemical compound CCCCCCCCCC(=O)OC YRHYCMZPEVDGFQ-UHFFFAOYSA-N 0.000 description 2
- JGHZJRVDZXSNKQ-UHFFFAOYSA-N methyl octanoate Chemical compound CCCCCCCC(=O)OC JGHZJRVDZXSNKQ-UHFFFAOYSA-N 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- ZWRUINPWMLAQRD-UHFFFAOYSA-N nonan-1-ol Chemical compound CCCCCCCCCO ZWRUINPWMLAQRD-UHFFFAOYSA-N 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
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- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 1
- CWKLZLBVOJRSOM-UHFFFAOYSA-N methyl pyruvate Chemical compound COC(=O)C(C)=O CWKLZLBVOJRSOM-UHFFFAOYSA-N 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 1
- AHJCYBLQMDWLOC-UHFFFAOYSA-N n-methyl-n-silylmethanamine Chemical compound CN(C)[SiH3] AHJCYBLQMDWLOC-UHFFFAOYSA-N 0.000 description 1
- UMRZSTCPUPJPOJ-KNVOCYPGSA-N norbornane Chemical compound C1C[C@H]2CC[C@@H]1C2 UMRZSTCPUPJPOJ-KNVOCYPGSA-N 0.000 description 1
- 125000005447 octyloxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 125000001820 oxy group Chemical group [*:1]O[*:2] 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229930004008 p-menthane Natural products 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229930006728 pinane Natural products 0.000 description 1
- 229960000380 propiolactone Drugs 0.000 description 1
- ILPVOWZUBFRIAX-UHFFFAOYSA-N propyl 2-oxopropanoate Chemical compound CCCOC(=O)C(C)=O ILPVOWZUBFRIAX-UHFFFAOYSA-N 0.000 description 1
- HUAZGNHGCJGYNP-UHFFFAOYSA-N propyl butyrate Chemical compound CCCOC(=O)CCC HUAZGNHGCJGYNP-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229940116423 propylene glycol diacetate Drugs 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-L sulfite Chemical class [O-]S([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-L 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- HSXKFDGTKKAEHL-UHFFFAOYSA-N tantalum(v) ethoxide Chemical compound [Ta+5].CC[O-].CC[O-].CC[O-].CC[O-].CC[O-] HSXKFDGTKKAEHL-UHFFFAOYSA-N 0.000 description 1
- 229930006978 terpinene Natural products 0.000 description 1
- 150000003507 terpinene derivatives Chemical class 0.000 description 1
- BRGJIIMZXMWMCC-UHFFFAOYSA-N tetradecan-2-ol Chemical compound CCCCCCCCCCCCC(C)O BRGJIIMZXMWMCC-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
Description
本發明有關表面處理劑、表面處理方法及基板表面之區域選擇性製膜方法。
近幾年來,半導體裝置之高積體化、微小化的傾向日益提高。隨之,進展藉由成為遮罩之經圖型化之有機膜及藉由蝕刻處理而製作之圖型化之無機膜之微細化。因此謀求半導體基板上形成之有機膜或無機膜的原子層等級之膜厚控制。
作為於基板上以原子層等級形成薄膜之方法已知有原子層沉積法(ALD(Atomic Layer Deposition)法;以下亦簡稱為「ALD法」)。ALD法與一般的CVD(Chemical Vapor Deposition)法比較,已知一併具有高的階差被覆性(step coverage)與膜厚控制性。
ALD法係於基板上交替供給構成欲形成的膜之元素為主成分之2種氣體,於基板上重複複數次之以原子層單位形成薄膜,而形成期望厚度之膜的薄膜形成技術。
ALD法係於供給原料氣體之間僅形成1層或數層原子層之程度的原料氣體成分吸附於基板表面,另一方面多餘原料氣體無助於成長之利用成長的自我控制功能(自我限制(self-limiting)功能)。
例如,於基板上形成Al
2O
3膜時,使用由TMA(三甲基鋁)所成之原料氣體與含有O的氧化氣體。又,於基板上形成氮化膜時,替代氧化氣體而使用氮化氣體。
近幾年來,已嘗試利用ALD法對基板表面進行區域選擇性製膜之方法(參考專利文獻1及非專利文獻1)。
伴隨此,要求可適用於藉由ALD法於基板上區域選擇性製膜般之具有經區域選擇性改質之表面的基板。且對於此等基板亦要求基板表面具有對於CVD、ALD前驅物之化學蒸氣或氧化氣體、氮化氣體具有耐性。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特表2003-508897號公報
[非專利文獻]
[非專利文獻1] J. Phys. Chem. C 2014, 118, 10957-10962
[發明欲解決之課題]
本發明係鑒於以上狀況而完成者,目的在於提供可對應於具有複數區域之基板表面的各區域材質以不同改質程度,進行例如賦予疏水性等之改質而使基板表面對於化學藥液及化學蒸氣具有耐性之表面處理劑、使用該表面處理劑對基板之表面處理方法、及包含前述表面處理方法之基板表面之區域選擇性製膜方法。
本發明之第1態樣係一種表面處理劑,其含有:以下述通式(P-1)表示之化合物(P):
[式中,R
1為烷基、烷氧基、氟化烷基或可具有取代基之芳香族烴基,R
2及R
3分別獨立為氫原子、烷基、氟化烷基或可具有取代基之芳香族烴基],
以下述通式(S-1)表示之化合物(S):
[式中,R為碳原子數3以上之烷基、碳原子數3以上之氟化烷基或可具有取代基之芳香族烴基],及
溶劑。
本發明之第2態樣係一種表面處理方法,其係對基板表面之表面處理方法,該方法包含將上述表面暴露於第1態樣之表面處理劑,
上述表面包含2個以上之區域,
2個以上之上述區域中之鄰接區域彼此材質不同,
藉由上述化合物(P)及上述化合物(S)與2個以上之上述區域反應,使2個以上之上述區域中之鄰接區域的接觸角互為不同。
本發明之第3態樣係一種基板表面之區域選擇性製膜方法,其包含:
藉由第2態樣之表面處理方法處理上述基板之上述表面,
於經表面處理之上述基板之表面,藉由原子層沉積法形成膜,
而使上述膜之材料堆積量區域選擇性不同。
[發明效果]
依據本發明,可提供可對應於具有複數區域之基板表面之各區域的材質以不同改質程度,進行例如賦予疏水性等之改質而使基板表面對於化學藥液及化學蒸氣具有耐性之表面處理劑、使用該表面處理劑對於基板之表面處理方法、及包含前述表面處理方法的基板表面之區域選擇性製膜方法。
<表面處理劑>
表面處理劑含有以下述通式(P-1)表示之化合物(P)、以下述通式(S-1)表示之化合物(S)及溶劑。且,表面處理劑只要可獲得期望效果則可含有化合物(P)、化合物(S)及溶劑以外之其他成分。以下針對表面處理劑可包含之必須或任意成分加以說明。
(化合物(P))
表面處理劑含有以下述通式(P-1)表示之化合物(P)。
以式(P-1)表示之化合物(P)中,作為R
1之烷基較佳為碳原子數8以上之直鏈或分支鏈狀之烷基,更佳為碳原子數12以上之直鏈或分支鏈狀之烷基。
作為R
1之烷基的較佳具體例,舉例為例如辛基、壬基、癸基、十一烷基、十二烷基、十三烷基、異十三烷基、十四烷基、十五烷基、十六烷基、異十六烷基、十七烷基、十八烷基、十九烷基、二十烷基、二十一烷基及二十二烷基以及與該等烷基處於結構異構性之關係的烷基。
以式(P-1)表示之化合物(P)中,作為R
1之烷氧基,較佳為碳原子數8以上之直鏈或分支鏈狀之烷氧基,更佳為碳原子數12以上之直鏈或分支鏈狀之烷氧基。
作為R
1之烷氧基的較佳具體例,舉例為例如辛氧基、壬氧基、癸氧基、十一烷氧基、十二烷氧基、十三烷氧基、異十三烷氧基、十四烷氧基、十五烷氧基、十六烷氧基、異十六烷氧基、十七烷氧基、十八烷氧基、十九烷氧基、二十烷氧基、二十一烷氧基及二十二烷氧基以及與該等烷氧基處於結構異構性之關係的烷氧基。
以式(P-1)表示之化合物(P)中,作為R
1之氟化烷基,較佳為碳原子數8以上之直鏈或分支鏈狀之氟化烷基,更佳為碳原子數12以上之直鏈或分支鏈狀之氟化烷基。
作為R
1之氟化烷基之較佳具體例,舉例為上述例示之R
1的烷基的氫原子一部分或全部經氟原子取代之基。
以式(P-1)表示之化合物(P)中,作為R
1之可具有取代基之芳香族烴基,舉例為例如苯基、萘基、蒽基、對-甲基苯基、對-第三丁基苯基、對-金剛烷基苯基、甲苯基、二甲苯基、異丙苯基、三甲苯基、聯苯基、菲基、2,6-二乙基苯基、2-甲基-6-乙基苯基等。
以式(P-1)表示之化合物(P)中,R
1之上述取代基具有之碳原子數的上限未特別限制,可為例如45以下。
以式(P-1)表示之化合物(P)中,作為R
2及R
3之烷基較佳為碳原子數8以上之直鏈或分支鏈狀之烷基。
作為R
2及R
3之烷基的較佳具體例,舉例為例如辛基、壬基、癸基、十一烷基、十二烷基、十三烷基、異十三烷基、十四烷基、十五烷基、十六烷基、異十六烷基、十七烷基、十八烷基、十九烷基、二十烷基、二十一烷基及二十二烷基以及與該等烷基處於結構異構性之關係的烷基。
以式(P-1)表示之化合物(P)中,作為R
2及R
3之氟化烷基,較佳為碳原子數8以上之直鏈或分支鏈狀之氟化烷基。
作為R
2及R
3之氟化烷基之較佳具體例,舉例為上述例示之R
2及R
3的烷基的氫原子一部分或全部經氟原子取代之基。
以式(P-1)表示之化合物(P)中,作為R
2及R
3之可具有取代基之芳香族烴基,舉例為例如苯基、萘基、蒽基、對-甲基苯基、對-第三丁基苯基、對-金剛烷基苯基、甲苯基、二甲苯基、異丙苯基、三甲苯基、聯苯基、菲基、2,6-二乙基苯基、2-甲基-6-乙基苯基等。
其中,作為R
2及R
3較佳為氫原子。
化合物(P)可單獨使用1種,亦可使用2種以上。
化合物(P)之含量相對於表面處理劑總質量較佳為0.001質量%以上5質量%以下,更佳為0.005質量%以上4質量%以下,又更佳為0.01質量%以上3質量%以下,特佳為0.03質量%以上3質量%以下。
藉由使化合物(P)含量在上述較佳範圍內,在處理包含2個以上區域之表面且2個以上的上述區域中的鄰接區域係材質不同之表面的方法中,在至少1個區域含有金屬表面時,化合物(P)容易吸附於含有金屬表面的區域,容易提高表面處理劑對含有金屬表面的區域之選擇性。
(化合物(S))
表面處理劑基於提高對含有酸或鹼之化學藥液及化學蒸汽之耐性之觀點,包括以下述通式(S-1)表示之化合物(S)。
以式(S-1)表示之化合物(S)中,作為R之烷基,基於提高防蝕效果之觀點,較佳為碳原子數7以上之直鏈或分支鏈狀之烷基,更佳為碳原子數10以上之直鏈或分支鏈狀之烷基,又更佳為碳原子數15以上之直鏈或分支鏈狀之烷基。
作為R的烷基之較佳具體例,舉例為例如丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十一烷基、十二烷基、十三烷基、異十三烷基、十四烷基、十五烷基、十六烷基、異十六烷基、十七烷基、十八烷基、十九烷基、二十烷基、二十一烷基及二十二烷基以及與該等烷基處於結構異構性關係之烷基。
以式(S-1)表示之化合物(S)中,作為R之氟化烷基,基於提高防蝕效果之觀點,較佳為碳原子數7以上之直鏈或分支鏈狀之氟化烷基,更佳為碳原子數10以上之直鏈或分支鏈狀之氟化烷基,又更佳為碳原子數15以上之直鏈或分支鏈狀之氟化烷基。
作為R之氟化烷基之較佳具體例,舉例為上述例示之R的烷基的氫原子一部分或全部經氟原子取代之基。
以式(S-1)表示之化合物(S)中,作為R之可具有取代基之芳香族烴基,舉例為例如苯基、萘基、蒽基、對-甲基苯基、對-第三丁基苯基、對-金剛烷基苯基、甲苯基、二甲苯基、異丙苯基、三甲苯基、聯苯基、菲基、2,6-二乙基苯基、2-甲基-6-乙基苯基等。
以式(S-1)表示之化合物(S)中,R之上述取代基具有之碳原子數的上限未特別限制,可為例如45以下。
化合物(S)可單獨使用1種,亦可使用2種以上。
化合物(S)之含量,基於提高對於酸及鹼之耐性之觀點,相對於表面處理劑總質量較佳為0.05質量%以上5質量%以下,更佳為0.1質量%以上4質量%以下,特佳為0.2質量%以上3質量%以下。
(溶劑)
表面處理劑含有溶劑。藉由表面處理劑含有溶劑,利用浸漬法、旋轉塗佈法等之基板的表面處理容易進行。
作為溶劑,舉例為例如亞碸類、碸類、醯胺類、內醯胺類、咪唑啶酮類、二烷基甘醇醚類、單醇系溶劑、(聚)烷二醇單烷醚類、(聚)烷二醇單烷醚乙酸酯類、其他醚類、酮類、其他酯類、內酯類、直鏈狀、分支鏈狀或環狀之脂肪族烴類、芳香族烴類、萜烯類等。
作為亞碸類,舉例為二甲基亞碸。
作為碸類,舉例為例如二甲基碸、二乙基碸、雙(2-羥基乙基)碸、四亞甲基碸。
作為醯胺類,舉例為例如N,N-二甲基甲醯胺、N-甲基甲醯胺、N,N-二甲基乙醯胺、N-甲基乙醯胺、N,N-二乙基乙醯胺。
作為內醯胺類,舉例為例如N-甲基-2-吡咯啶酮、N-乙基-2-吡咯啶酮、N-丙基-2-吡咯啶酮、N-羥基甲基-2-吡咯啶酮、N-羥基乙基-2-吡咯啶酮。
作為咪唑啶酮類,舉例為例如1,3-二甲基-2-咪唑啶酮、1,3-二乙基-2-咪唑啶酮、1,3-二異丙基-2-咪唑啶酮。
作為二烷基甘醇醚類,舉例為例如二甲基甘醇、二乙基二甘醇、二甲基三甘醇、甲基乙基二甘醇、二乙基甘醇、三乙二醇丁基甲醚。
作為單醇系溶劑,舉例為例如甲醇、乙醇、正丙醇、異丙醇、正丁醇、異丁醇、第二丁醇、第三丁醇、正戊醇、異戊醇、2-甲基丁醇、第二戊醇、第三戊醇、3-甲氧基丁醇、3-甲基-3-甲氧基丁醇、正己醇、2-甲基戊醇、第二己醇、2-乙基丁醇、第二庚醇、3-庚醇、1-辛醇、2-乙基己醇、第二辛醇、正壬醇、2,6-二甲基-4-庚醇、正癸醇、第二-十一烷醇、三甲基壬醇、第二-十四烷醇、第二-十七烷醇、苯酚、環己醇、甲基環己醇、3,3,5-三甲基環己醇、苄醇、苯基甲基卡必醇、二丙酮醇、甲酚。
作為(聚)烷二醇單烷醚類,舉例為例如乙二醇單甲醚、乙二醇單乙醚、乙二醇單正丙醚、乙二醇單正丁醚、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單正丙醚、二乙二醇單正丁醚、三乙二醇單甲醚、三乙二醇單乙醚、丙二醇單甲醚、丙二醇單乙醚、丙二醇單正丙醚、丙二醇單正丁醚、二丙二醇單甲醚、二丙二醇單乙醚、二丙二醇單正丙醚、二丙二醇單正丁醚、三丙二醇單甲醚、三丙二醇單乙醚。
作為(聚)烷二醇單烷醚乙酸酯類,舉例為例如乙二醇單甲醚乙酸酯、乙二醇單乙醚乙酸酯、乙二醇單丁醚乙酸酯、二乙二醇單甲醚乙酸酯、二乙二醇單乙醚乙酸酯、丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯。
作為其他醚類,舉例為例如二甲醚、二乙醚、甲基乙基醚、二丙醚、二異丙醚、二丁醚、二異戊醚、二乙二醇二甲醚、二乙二醇甲基乙基醚、二乙二醇二乙醚、四乙二醇二甲醚、四氫呋喃。
作為酮類,舉例為例如甲基乙基酮、環己酮、2-庚酮、3-庚酮。
作為其他酯類,舉例為例如2-羥基丙酸甲酯、2-羥基丙酸乙酯等之乳酸烷酯類;2-羥基-2-甲基丙酸乙酯、3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯、乙氧基乙酸乙酯、羥基乙酸乙酯、2-羥基-3-甲基丁酸甲酯、乙酸3-甲氧基丁酯、乙酸3-甲基-3-甲氧基-1-丁酯、丙酸3-甲基-3-甲氧基丁酯、乙酸乙酯、乙酸正丙酯、乙酸異丙酯、乙酸正丁酯、乙酸異丁酯、乙酸正戊酯、乙酸正己酯、乙酸正庚酯、乙酸正辛酯、甲酸正戊酯、乙酸異戊酯、丙酸正丁酯、丁酸乙酯、丁酸正丙酯、丁酸異丙酯、丁酸正丁酯、正辛酸甲酯、癸酸甲酯、丙酮酸甲酯、丙酮酸乙酯、丙酮酸正丙酯、乙醯乙酸甲酯、乙醯乙酸乙酯、2-氧代丁酸乙酯、己二酸二甲酯、丙二醇二乙酸酯。
作為內酯類,舉例為例如丙內酯、γ-丁內酯、6-戊內酯。
作為直鏈狀、分支鏈狀或環狀之脂肪族烴類,舉例為例如正己烷、正庚烷、正辛烷、正壬烷、甲基辛烷、正癸烷、正十一烷、正十二烷、2,2,4,6,6-五甲基庚烷、2,2,4,4,6,8,8-七甲基壬烷、環己烷、甲基環己烷。
作為芳香族烴類,舉例為例如苯、甲苯、二甲苯、1,3,5-三甲基苯、萘。
作為萜品類,舉例為例如對-薄荷烷、二苯基薄荷烷、檸檬烯、萜品烯、冰片烷、降冰片烷、蒎烷。
該等中,作為溶劑較佳為乙酸3-甲基-3-甲氧基-1-丁酯、乙酸乙酯、丙二醇單甲醚乙酸酯、丙二醇單甲醚、二乙二醇單甲醚、1-辛醇、甲基乙基酮,更佳為丙二醇單甲醚、1-辛醇。
(其他成分)
表面處理劑只要不損及本發明效果,則亦可含有化合物(P),化合物(S)、溶劑以外的成分(以下亦稱為「其他成分」)。作為其他成分,舉例為例如抗氧化劑、紫外線吸收劑、黏度調整劑、消泡劑、pH調整劑。
表面處理劑係藉由習知方法將上述化合物(P)、化合物(S)、溶劑、根據需要之其他成分混合而得。
表面處理劑較佳使用於處理包含2個以上的區域之表面,且係2個以上之上述區域中之鄰接之區域彼此材質不同之表面。
該情況下,2個以上之上述區域中之至少一個區域較佳具有由金屬所成之表面,該金屬更佳為銅、鈷或釕。
<表面處理方法>
表面處理方法係對基板表面之表面處理方法,包含將上述表面暴露於本發明之表面處理劑。
表面處理方法中,上述表面包含2個以上之區域,2個以上之上述區域中之鄰接區域彼此材質不同,藉由上述化合物(P)及上述化合物(S)與2個以上之上述區域反應,使2個以上之上述區域中之鄰接區域的接觸角互為不同。
本實施形態中,作為成為表面處理對象之「基板」,例示有用於製作半導體裝置所使用之基板。作為該基板,舉例為例如矽(Si)基板、氮化矽(SiN)基板、矽氧化膜(Ox)基板、鎢(W)基板、鈷(Co)基板、氮化鈦(TiN)基板、氮化鉭(TaN)基板、鍺(Ge)基板、矽鍺(SiGe)基板、鋁(Al)基板、鎳(Ni)基板、釕(Ru)基板、銅(Cu)基板等。
所謂「基板表面」除了基板本身之表面以外,舉例為基板上所設之經圖型化之無機層及經圖型化之有機層的表面,以及未經圖型化之無機層或未經圖型化之有機層之表面。
作為基板上所設之經圖型化之無機層例示有使用光阻法於基板中存在之無機層表面製作蝕刻遮罩,隨後,藉由蝕刻處理形成之圖型化之無機層。作為無機層除了基板本身以外,亦可例示構成基板之元素的氧化膜、於基板表面形成之SiN、Ox、W、Co、TiN、TaN、Ge、SiGe、Al、Al
2O
3、Ni、Ru、Cu等之無機物的膜或層等。
作為此等膜或層並未特別限定,但可例示於半導體裝置之製作過程中形成之無機物的膜或層等。
作為基板上所設之經圖型化之有機層例示有使用光阻等藉由光微影法於基板上形成之經圖型化之樹脂層等。此等經圖型化之有機層可藉由例如於基板上形成光阻膜的有機層,對該有機層透過光罩進行曝光並顯像而形成。作為有機層除了基板本身表面以外,亦可為設於基板表面之積層膜的表面等所設之有機層。作為此等有機層並未特別限定,但可例示於半導體裝置之製作過程中,用以形成蝕刻遮罩所設之有機物的膜。
(基板表面包含2個區域的態樣)
表面處理方法係基板表面包含2個以上之區域,上述2個以上之區域中鄰接的區域彼此材質不同。
上述2個以上之區域間,作為水的接觸角處於較其他區域變大傾向之區域,舉例為包含自W、Co、Al、Al
2O
3、Ni、Ru、Cu、TiN及TaN所組成之群中選擇之至少1種的區域。水的接觸角處於較其他區域變大傾向之區域較佳表面自由能減小。
上述2個以上之區域間,水的接觸角處於較於其他區域變小傾向之區域,舉例為包含自Si、SiO
2、SiN、Ox、TiN、TaN、Ge及SiGe所組成之群中選擇之至少1種的區域。水的接觸角處於較其他區域變小傾向之區域較佳表面自由能提高。
例如,將上述2個以上之區域中之1個區域設為第1區域,將與其鄰接之區域設為第2區域時,第1區域與第2區域之材質不同。
此處,第1區域與第2區域各亦可分割為複數區域,亦可不分割。
作為第1區域與第2區域之例,舉例為例如將基板本身表面設為第1區域,將基板表面形成之無機層表面設為第2區域之態樣,將基板表面形成之第1無機層表面設為第1區域,將形成於基板表面之第2無機層表面設為第2區域之態樣等。又,同樣亦可舉例為替代該等無機層之形成,而形成有機層之態樣等。
作為將基板本身表面設為第1區域,將基板表面形成之無機層表面設為第2區域之態樣,基於基板表面之材質不同的2個以上之鄰接區域間選擇性提高疏水性且提高水的接觸角之差的觀點,較好為將自Si基板、SiN基板、Ox基板、TiN基板、TaN基板、Ge基板及SiGe基板所組成之群中選擇之至少1種基板表面設為第1區域,將於上述基板表面形成之包含自W、Co、Al、Ni、Ru、Cu、TiN及TaN所組成之群中選擇之至少1種的無機層的表面設為第2區域之態樣。
又,作為將基板表面形成之第1無機層表面設為第1區域,將形成於基板表面之第2無機層表面設為第2區域之態樣,基於基板表面之材質不同的2個以上之鄰接區域間選擇性提高疏水性且提高水的接觸角之差的觀點,較好為將於例如Si基板等之任意基板表面形成之包含自SiO
2、SiN、Ox、TiN、TaN、Ge及SiGe所組成之群中選擇之至少1種的第1無機層的表面設為第1區域,將於上述基板表面形成之包含自W、Co、Al、Ni、Ru、Cu、TiN及TaN所組成之群中選擇之至少1種的第2無機層的表面設為第2區域之態樣。
(基板表面包含3個以上區域的態樣)
將上述2個以上之區域中之1個區域設為第1區域,與其鄰接之區域設為第2區域,近而將與第2區域鄰接之區域設為第3區域時,第1區域與第2區域材質不同,第2區域與第3區域材質不同。
此處,第1區域與第3區域鄰接時,第1區域與第3區域材質不同。
第1區域與第3區域未鄰接時,第1區域與第3區域材質可不同亦可相同。
又,第1區域、第2區域及第3區域各亦可分割為複數區域亦可不分割。
作為第1區域、第2區域及第3區域之例,舉例為例如將基板本身表面設為第1區域,將基板表面形成之第1無機層表面設為第2區域,將基板表面形成之第2無機層表面設為第3區域之態樣等。又,同樣亦可舉例為替代該等無機層之形成,而形成有機層之態樣等。又亦同樣可舉例為僅將第2無機層及第3無機層之任一者變為有機層而形成般之包含無機層及有機層兩者之態樣等。
基於基板表面之材質不同的2個以上之鄰接區域間選擇性提高疏水性且提高水的接觸角之差的觀點,較佳為將例如Si基板等之任意基板本身表面設為第1區域,於上述基板表面所形成之包含自SiO
2、SiN、Ox、TiN、TaN、Ge及SiGe所組成之群中選擇之至少1種的第1無機層的表面設為第2區域,將於上述基板表面形成之包含自W、Co、Al、Ni、Ru、Cu、TiN及TaN所組成之群中選擇之至少1種的第2無機層的表面設為第3區域之態樣。
關於存在第4個以上區域之情況,亦可適用同樣思考方法。
材質不同之區域數的上限值,只要不損及本發明效果則無任何限制,例如可為7以下或6以下,典型上為5以下。
(暴露)
作為將基板表面暴露於表面處理劑之方法,舉例為將表面處理劑藉由例如浸漬法或旋轉塗佈法、輥塗佈法及刮板法等之塗佈法等之手段,暴露於基板表面之方法。
作為暴露溫度例如為10℃以上90℃以下,較佳為20℃以上80℃以下,更佳為20℃以上70℃以下,又更佳為20℃以上30℃以下。
作為上述暴露時間,基於基板表面之材質不同的2個以上之鄰接區域間選擇性提高疏水性之觀點,較佳為20秒以上,更佳為30秒以上,更佳為45秒以上。
上述暴露時間之上限值未特別限制,但可為例如2小時以下等,典型上為1小時以下,較佳為15分鐘以下,更佳為5分鐘以下,特佳為2分鐘以下。
上述暴露後可根據需要進行洗淨及/或乾燥。洗淨係例如以水潤洗、活性劑清洗等進行。乾燥係藉氮吹拂等進行。
例如,作為具備經圖型化之無機層或經圖型化之有機層之基板表面之以洗淨液之洗淨處理,可直接採用以往經圖型化之無機層或經圖型化之有機層之洗淨處理所使用之洗淨液,關於經圖型化之無機層舉例為SPM(硫酸・過氧化氫水)、APM(氨・過氧化氫水)等,關於經圖型化之有機層舉例為水、活性劑清洗等。
且,對於乾燥後之處理基板亦可根據需要追加100℃以上300℃以下之加熱處理。
藉由上述暴露,可對應於基板表面之各區域的材質區域選擇性吸附表面處理劑。
暴露於表面處理劑後之基板表面對水之接觸角,可設為例如50°以上140°以下。
藉由控制基板表面之材質、表面處理劑之種類及使用量以及暴露條件等,可將對水之接觸角設為50°以上,較佳為60°以上,更佳為70°以上,又更佳為90°以上。
作為上述接觸角之上限值並未特別限制,但為例如140°以下,典型上為130°以下。
表面處理方法,因使基板表面之2個以上鄰接之區域間材質不同,藉由上述暴露,可於上述2個以上鄰接之區域間選擇性提高疏水性,可使水的接觸角彼此不同。
作為上述2個以上鄰接之區域間的水的接觸角之差,只要不損及本發明之效果,則未特別限制,舉例為例如10°以上,基於上述2個以上之鄰接區域間選擇性提高疏水性之觀點,上述水的接觸角差較佳為20°以上,更佳為30°以上,又更佳為40°以上。
作為上述接觸角差的上限值,只要不損及本發明之效果,則未特別限制,舉例為例如80°以下或70°以下,典型上為60°以下。
<對基板上之區域選擇性製膜方法>
其次,針對使用上述表面處理方法對基板上區域選擇性製膜方法加以說明。
本態樣中,對基板上之區域選擇性製膜方法係包含:藉由上述本發明之表面處理方法,處理上述基板之上述表面;於經表面處理之上述基板之表面藉由原子層沉積法(ALD法)形成膜,且使上述膜之材料堆積量區域選擇性地不同。
上述表面處理結果,使上述2個以上區域間之水的接觸角不同。該情況下,較佳上述2個以上區域間之表面自由能不同。其結果,本態樣中,可使上述2個以上區域間之形成上述膜之材料的堆積量於基板表面之區域選擇性不同。
具體而言,較佳於上述2個以上區域間之水的接觸角較其他區域大之區域,利用ALD法之膜形成材料難以吸附於基板表面上之上述區域,而於上述2個以上區域間之膜形成材料之堆積量產生差異。其結果,使基板上之區域選擇性膜形成材料的堆積量不同。
上述2個以上區域間之水的接觸角較其他區域大之區域較佳表面自由能小於其他區域。膜形成材料對上述區域之吸附較佳為化學吸附。作為上述化學吸附,舉例為與羥基之化學吸附等。
上述2個以上之區域間,作為水的接觸角處於較其他區域大的傾向之區域,舉例為包含自W、Co、Al、Al
2O
3、Ni、Ru、Cu、TiN及TaN所組成之群中選擇之至少1種的區域。水的接觸角處於較其他區域大的傾向之區域較佳表面自由能減小。
上述2個以上之區域間,作為水的接觸角處於較其他區域小的傾向之區域,舉例為包含自Si、SiO
2、SiN、Ox、TiN、TaN、Ge及SiGe所組成之群中選擇之至少1種的區域。水的接觸角處於較其他區域小的傾向之區域較佳表面自由能提高。
(藉由ALD法之膜形成)
作為藉由ALD法之膜形成方法未特別限制,但較佳為藉由使用至少2種氣相反應物質(以下簡稱為「前驅物氣體」)之吸附的薄膜形成方法。使用前驅物氣體之吸附較佳為化學吸附。
具體而言,舉例為包含下述步驟(a)及(b),重複至少1次(1循環)下述步驟(a)及(b)直至獲得期望膜厚之方法等。
(a)將以上述第2態樣之方法表面處理之基板暴露於第1前驅物氣體之脈衝中之步驟,及
(b)於上述步驟(a)之後,將基板暴露於第2前驅物氣體之脈衝中之步驟。
上述步驟(a)之後且上述步驟(b)之前,亦可包含電漿處理步驟、藉由載氣、第2前驅物氣體等去除或排氣(吹拂)掉第1前驅物氣體及其反應物之步驟等,亦可不含該等步驟。
上述步驟(b)之後,亦可包含電漿處理步驟、藉由載氣等去除或吹拂掉第2前驅物氣體及其反應物之步驟等,亦可不含該等步驟。
作為載氣,舉例為氮氣、氬氣、氦氣等之惰性氣體。
較佳每個各循環之各脈衝及形成之各層係自我控制,更佳所形成之各層為單原子層。
作為上述單原子層之膜厚,可為例如5nm以下,較佳為3nm以下,更佳為1nm以下,又更佳為0.5nm以下。
作為第1前驅物氣體,舉例為有機金屬、金屬鹵化物、金屬氧化鹵化物等,具體而言,舉例為五乙氧化鉭、肆(二甲胺基)鈦、伍(二甲胺基)鉭、肆(二甲胺基)鋯、肆(二甲胺基)鉿、肆(二甲胺基)矽烷、銅-六氟乙醯基丙酮酸酯乙烯基三甲基矽烷、Zn(C
2H
5)
2、Zn(CH
3)
2、TMA(三甲基鋁)、TaCl
5、WF
6、WOCl
4、CuCl、ZrCl
4、AlCl
3、TiCl
4、SiCl
4、HfCl
4等。
作為第2前驅物氣體舉例為可分解第1前驅物之前驅物氣體或可去除第1前驅物之配位子的前驅物氣體,具體舉例為H
2O、H
2O
2、O
2、O
3、NH
3、H
2S、H
2Se、PH
3、AsH
3、C
2H
4或Si
2H
6等。
作為步驟(a)之暴露溫度未特別限制,例如為50℃以上800℃以下,較佳為100℃以上650℃以下,更佳為125℃以上500℃以下,又更佳為150℃以上375℃以下。
作為步驟(b)之暴露溫度未特別限制,舉例為與步驟(a)中之暴露溫度實質相等或其以上之溫度。
作為藉由ALD法形成的膜並未特別限制,舉例為含純元素之膜(例如Si、Cu、Ta、W)、含氧化物之膜(例如SiO
2、GeO
2、HfO
2、ZrO
2、Ta
2O
5、TiO
2、Al
2O
3、ZnO、SnO
2、Sb
2O
5、B
2O
3、In
2O
3、WO
3)、含氮化物之膜(例如Si
3N
4、TiN、AlN、BN、GaN、NbN)、含碳化物之膜(例如SiC)、含硫化物之膜(例如CdS、ZnS、MnS、WS
2、PbS)、含硒化物之膜(例如CdSe、ZnSe)、含磷化物之膜(GaP、InP)、含砷化物之膜(例如GaAs、InAs)或該等之混合物等。
[實施例]
以下基於實施例及比較例更具體說明本發明,但本發明並非限定於以下實施例。
[實施例1及比較例1~2]
(表面處理劑之調製)
於下述溶劑中,下述表1中記載之含量均一混合下述化合物(P)及下述化合物(S),調製實施例1及比較例1~2的表面處理劑。
作為化合物(P),使用下述P1~P2。
P1:十八烷基膦酸
P2:十七氟癸基膦酸
作為化合物(S),使用下述S1。
S1:庚硫醇
作為溶劑,使用下述A1。
A1:丙二醇單甲醚
(表面處理)
使用所得之實施例1及比較例1~2的表面處理劑,以下述方法,進行銅基板之表面處理。
具體而言,銅基板於濃度25ppm的HF水溶液中於25℃浸漬10秒,進行前處理。上述前處理後,銅基板以去離子水洗淨1分鐘。將水洗後之銅基板藉由氮氣流乾燥。
乾燥後之銅基板於上述各表面處理劑中於25℃浸漬1分鐘,進行銅基板之表面處理。表面處理後之銅基板以異丙醇洗淨1分鐘後,以去離子水洗淨1分鐘。經洗淨後之銅基板藉由氮氣流乾燥,獲得經表面處理之銅基板。
(酸浸漬)
上述HF前處理後之各基板、上述經表面處理之銅基板於濃度1.0質量%之HCl水溶液中於25℃浸漬1分鐘。上述酸浸漬後,以去離子水 洗淨銅基板1分鐘。水洗後之銅基板以氮氣流予以乾燥。
(鹼浸漬)
上述HF前處理後之各基板、上述經表面處理之銅基板於濃度1.0質量%之NH
3水溶液中於25℃浸漬1分鐘。上述鹼浸漬後,以去離子水 洗淨銅基板1分鐘。水洗後之銅基板以氮氣流予以乾燥。
(水的接觸角之測定)
針對上述HF前處理後之各基板、上述表面處理後之各基板、上述酸浸漬後之各基板、上述鹼浸漬後之各基板測定水的接觸角。
水的接觸角之測定係使用Dropmaster700(協和界面科學股份公司製)於各基板表面滴下純水液滴(2.0μL),測定滴下2秒後之接觸角。結果示於表1。
(銅基板之膜厚減少量)
針對上述酸浸漬後之各基板、上述鹼浸漬後之各基板,測定對於浸漬前之各基板之膜厚減少量。
使用電阻率測定器VR-250(國際電氣半導體服務股份有限公司製)測定薄片電阻值。由上述薄片電阻值,算出膜厚。結果示於表1。
由表1,以實施例1之表面處理劑對基板進行表面處理時,與使用比較例1~2的表面處理劑的情況相比,即使酸浸漬後及鹼浸漬後,水接觸角並未降低。由該等結果,可知藉由併用可形成自我組織化單分子層(SAM)之兩種SAM材料,可提高對於酸及鹼之耐性。
[實施例2及比較例3~4]
(表面處理劑之調製)
於下述溶劑中,下述表2中記載之含量均一混合下述化合物(P)及下述化合物(S),調製實施例2及比較例3~4的表面處理劑。
作為化合物(P),使用下述P1。
P1:十八烷基膦酸
作為化合物(S),使用下述S2、S-1。
S2:十八烷硫醇
S-1:1,2,3-苯并三唑
作為溶劑,使用下述A2。
A2:1-辛醇
(表面處理、酸浸漬、鹼浸漬)
使用所得之實施例2及比較例3~4之表面處理劑,與實施例1及比較例1~2同樣,於HF水溶液之前處理後,進行銅基板之表面處理、酸浸漬及鹼浸漬,測定水的接觸角及銅基板的膜厚減少量。結果示於表2。
由表2之Cu膜厚減少量之結果可知,使用含有S2作為化合物(S)的實施例2之表面處理劑對銅基板進行表面處理時,與S2同樣,與含有作為銅的防腐劑使用之S-1的比較例4的表面處理劑之情況相比,對於酸之耐性大幅提高。
又,由表2之水接觸角之結果可知,使用實施例2之表面處理劑對基板進行表面處理時,與使用比較例4之表面處理劑的情況相比,經高疏水化。
[實施例3]
(表面處理劑之調製)
於下述溶劑中,下述表3中記載之含量均一混合下述化合物(P)及下述化合物(S),調製實施例3的表面處理劑。
作為化合物(P),使用下述P1。
P1:十八烷基膦酸
作為化合物(S),使用下述S2。
S2:十八烷硫醇
作為溶劑,使用下述A1。
A1:丙二醇單甲醚
(表面處理、酸浸漬、鹼浸漬)
使用所得之實施例3之表面處理劑,與實施例1及比較例1~2同樣,於HF水溶液之前處理後,進行銅基板之表面處理、酸浸漬及鹼浸漬,測定水的接觸角及銅基板的膜厚減少量。其結果與實施例1及比較例1之結果一起示於表3。
由表3之Cu膜厚減少量之結果可知,藉由增加化合物(S)的碳原子數,可提高對於酸的耐性。
[實施例3~6及比較例1]
(表面處理劑之調製)
於下述溶劑中,下述表4中記載之含量均一混合下述化合物(P)及下述化合物(S),調製實施例3~6及比較例1的表面處理劑。
作為化合物(P),使用下述P1。
P1:十八烷基膦酸
作為化合物(S),使用下述S2。
S2:十八烷硫醇
作為溶劑,使用下述A1。
A1:丙二醇單甲醚
(表面處理、酸浸漬、鹼浸漬)
使用所得之實施例3~6及比較例1之表面處理劑,與實施例1及比較例1~2同樣,於HF水溶液之前處理後,進行銅基板之表面處理、酸浸漬及鹼浸漬,測定水的接觸角及銅基板的膜厚減少量。結果示於表4。
由表4之結果可知,隨著化合物(S)濃度增加,就水接觸角方面,及就Cu膜厚減少量方面,對於酸及鹼之耐性均獲得提高。
[實施例2、7~8及比較例3、5]
(表面處理劑之調製)
於下述溶劑中,下述表5中記載之含量均一混合下述化合物(P)及下述化合物(S),調製實施例2、7~8及比較例3、5的表面處理劑。
作為化合物(P),使用下述P1。
P1:十八烷基膦酸
作為化合物(S),使用下述S2。
S2:十八烷硫醇
作為溶劑,使用下述A2。
A2:1-辛醇
(表面處理)
使用所得之實施例2、7~8及比較例3、5之表面處理劑,與實施例1及比較例1~2同樣,於HF水溶液之前處理後,進行銅基板之表面處理。
(熱處理)
將上述經表面處理之銅基板於200℃進行20分鐘熱處理。
(水的接觸角測定)
針對上述熱處理前後之各基板測定水的接觸角。結果示於表5。
(基板上之表面被覆率之測定)
針對上述熱處理前之各基板,藉由循環伏安法算出表面處理劑對於銅基板之表面被覆率。結果示於表5。
由表5之結果可知,以僅調配化合物(S)之比較例5的表面處理劑對基板進行表面處理時,表面被覆率雖高,但熱處理後之水接觸角與熱處理前相比大幅降低,無法耐受實際製程溫度。又,以僅調配化合物(P)之比較例3的表面處理劑對基板進行表面處理時,雖耐熱性高,但表面被覆率低,對於酸及鹼之耐性不完全。另一方面,以併用化合物(S)與化合物(P)之實施例2、7~8的表面處理劑進行表面處理時,表面被覆率及耐熱性均優異。
[實施例2~3及比較例3]
(使用SiO
2基板之表面處理)
除了使用實施例2~3及比較例3之表面處理劑,且使用SiO
2基板替代銅基板以外,與實施例1及比較例1~2同樣,於HF水溶液之前處理後,進行SiO
2基板之表面處理,測定水的接觸角。其結果與使用銅基板之情況的結果一起示於表6。
由表6之結果可知,與僅含化合物(P)之比較例3的表面處理劑同樣,併用化合物(P)與化合物(S)系的實施例2~3的表面處理劑中,與SiO
2基板相比,可使銅基板選擇性疏水化。
Claims (10)
- 如請求項1之表面處理劑,其中前述式(P-1)中,R 1係碳原子數8以上之烷基、碳原子數8以上之烷氧基、碳原子數8以上之氟化烷基或可具有取代基之芳香族烴基,R 2及R 3分別獨立為氫原子、碳原子數8以上之烷基、碳原子數8以上之氟化烷基或可具有取代基之芳香族烴基。
- 如請求項1或2之表面處理劑,其中前述式(S-1)中,R係直鏈狀或分支鏈狀之烷基、或直鏈狀或分支鏈狀之氟化烷基,前述烷基或氟化烷基之碳原子數為7以上。
- 如請求項1或2之表面處理劑,其中前述化合物(S)之含量,相對於前述表面處理劑之全質量為0.05質量%以上5質量%以下。
- 如請求項1或2之表面處理劑,其中前述化合物(P)之含量,相對於前述表面處理劑之全質量為0.001質量%以上5質量%以下。
- 如請求項1或2之表面處理劑,其係使用於處理包含2個以上的區域之表面,且係2個以上之前述區域中之鄰接之區域彼此材質不同之表面。
- 如請求項6之表面處理劑,其中2個以上之前述區域中至少1個區域具有由金屬所成之表面。
- 如請求項7之表面處理劑,其中前述金屬係銅、鈷或釕。
- 一種表面處理方法,其係對基板表面之表面處理方法,該方法包含將前述表面暴露於如請求項1至8中任一項之表面處理劑, 前述表面包含2個以上之區域, 2個以上之前述區域中之鄰接區域彼此材質不同, 藉由前述化合物(P)及前述化合物(S)與2個以上之前述區域反應,使2個以上之前述區域中之鄰接區域的接觸角互為不同。
- 一種基板表面之區域選擇性製膜方法,其包含: 藉由如請求項9之表面處理方法處理前述基板之前述表面, 於經表面處理之前述基板之表面,藉由原子層沉積法形成膜, 而使前述膜之材料堆積量區域選擇性不同。
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