TW202230563A - Cobalt-carbon gas trapping apparatus and method thereof separating a cobalt-carbon gas flowing into the chamber into the cobalt complex and the carbon complex - Google Patents
Cobalt-carbon gas trapping apparatus and method thereof separating a cobalt-carbon gas flowing into the chamber into the cobalt complex and the carbon complex Download PDFInfo
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- CODVACFVSVNQPY-UHFFFAOYSA-N [Co].[C] Chemical compound [Co].[C] CODVACFVSVNQPY-UHFFFAOYSA-N 0.000 title claims abstract description 92
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 52
- 150000004700 cobalt complex Chemical class 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims description 19
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- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 97
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- 229910052751 metal Inorganic materials 0.000 claims description 18
- 238000002955 isolation Methods 0.000 claims description 17
- 238000005192 partition Methods 0.000 claims description 15
- 150000001868 cobalt Chemical class 0.000 claims description 13
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Abstract
Description
本發明涉及一種半導體或類似産品的製造裝備,尤其涉及一種鈷-碳氣體捕集裝置,其可對作爲金屬工藝中産生的副産物的鈷-碳氣體進行有效地捕集。The present invention relates to a manufacturing equipment for semiconductors or similar products, in particular to a cobalt-carbon gas trapping device, which can effectively trap cobalt-carbon gas as a by-product produced in a metal process.
通常,半導體製造工藝大致包括前工藝(製造工藝)和後工藝(組裝工藝),所謂的前工藝就是指在各種處理室(Chamber)內將薄膜蒸鍍在晶片(Wafer)上,反復地進行將蒸鍍的薄膜有選擇地蝕刻的過程,從而加工特定的圖案,是製造半導體芯片(Chip)的工藝,所謂的後工藝是指將在上述前工藝中製造的芯片逐個分離後,與引線框架結合並組裝成完成品的工藝。Usually, the semiconductor manufacturing process roughly includes a pre-process (manufacturing process) and a post-process (assembly process). The so-called pre-process refers to the deposition of thin films on the wafer (Wafer) in various processing chambers (Chamber). Repeatedly The process of selectively etching the vapor-deposited film to process a specific pattern is the process of manufacturing semiconductor chips (Chip). And the process of assembling it into a finished product.
此時,在上述晶片上蒸鍍薄膜,或將在晶片上蒸鍍的薄膜進行蝕刻的工藝在處理室內使用矽烷(Silane)、砷化氫(Arsine)及氯化硼等有害氣體和氫氣等的工藝氣體並在高溫下進行,在進行上述工藝期間處理室內部産生大量含有各種易燃性氣體和腐蝕性異物及有毒成分的有害氣體等。At this time, the process of depositing a thin film on the wafer or etching the thin film deposited on the wafer uses harmful gases such as Silane, Arsine, and boron chloride, and hydrogen gas in a processing chamber. The process gas is carried out at high temperature. During the above process, a large amount of harmful gas containing various flammable gases, corrosive foreign substances and toxic components is generated inside the processing chamber.
因此,在半導體製造裝備設置有洗滌器(Scrubber),其在將處理室設置爲真空狀態的真空泵的後端將從處理室內排出的廢氣淨化後向大氣排出。Therefore, semiconductor manufacturing equipment is provided with a scrubber, which purifies the exhaust gas discharged from the processing chamber at the rear end of a vacuum pump that sets the processing chamber in a vacuum state and discharges it to the atmosphere.
但是,問題在於,從處理室中排出的廢氣與大氣接觸,或周圍的溫度下降的話會固化並變爲粉末,上述粉末固著在排氣線並使得排氣壓力上升的同時,流入真空泵的情况下會引發真空泵的故障,導致廢氣逆流並使得處理室內的晶片被污染。However, there is a problem in that the exhaust gas discharged from the processing chamber is in contact with the atmosphere, or when the surrounding temperature drops, it solidifies and turns into powder, and the powder is fixed to the exhaust line and raises the exhaust pressure and flows into the vacuum pump. This can cause vacuum pump failure, causing backflow of exhaust gas and contamination of wafers in the chamber.
由此,爲了解决如上所述的問題,如圖1所示,在處理室10和真空泵30之間設置有粉末捕集裝置,其使得從處理室10中排出的廢氣凝著爲粉末狀態。Therefore, in order to solve the above-mentioned problems, as shown in FIG. 1 , a powder trapping device is provided between the
換句話說,如圖1所示,處理室10和真空泵30通過泵送管道60連接,在泵送管道60設置有捕集管70,其從泵送管道60分支並設置,用於將在處理室10中産生的反應副産物捕集並積壓爲粉末形態。In other words, as shown in FIG. 1 , the
這樣以往的粉末捕集裝置的情况,在處理室10內部蒸鍍薄膜或蝕刻時産生的未反應氣體向具有比處理室10相對低的溫度氛圍的泵送管道60側流入的同時,固化爲粉末狀態的粉末後,堆積在從泵送管道60分支並設置的捕集管70。In the case of the conventional powder trapping device as described above, the unreacted gas generated during thin film deposition or etching inside the
此時,將捕集管70從泵送管道60分支設置的原因是爲了防止粉末流入真空泵30側。作爲參考,圖中未說明的符號“9”指示粉末。At this time, the reason why the
但是,捕集對象是金屬工藝中産生的鈷-碳氣體的情况,問題在於,使用根據現有技術的反應副産物粉末捕集裝置時捕集效率大大下降。這是因爲鈷-碳氣體由鈷複合體和碳複合體形成,即使鈷複合體和碳複合體互相間的蒸鍍條件大不相同也將它們馬上蒸鍍爲鈷-碳氣體形態。However, in the case where the object to be captured is the cobalt-carbon gas generated in the metal process, there is a problem in that the capture efficiency is greatly reduced when using the reaction by-product powder capture device according to the related art. This is because the cobalt-carbon gas is formed from the cobalt complex and the carbon complex, and the cobalt complex and the carbon complex are immediately vapor-deposited into a cobalt-carbon gas state even if the deposition conditions of the cobalt complex and the carbon complex are greatly different from each other.
先行技術文獻prior art literature
專利文獻Patent Literature
(專利文獻0001)韓國登記專利公報 第10-0862684號(2008.10.02)(Patent Document 0001) Korean Registered Patent Publication No. 10-0862684 (2008.10.02)
由此,本發明是爲了解决如上所述的現有的所有問題而提出的,本發明的目的在於,提供一種鈷-碳氣體捕集裝置,其可對作爲金屬工藝中産生的副産物的鈷-碳氣體進行有效地捕集。Therefore, the present invention has been made in order to solve all the conventional problems as described above, and an object of the present invention is to provide a cobalt-carbon gas trapping device capable of removing cobalt-carbon, which is a by-product produced in a metal process, Gas is effectively trapped.
爲了實現上述目的,根據本發明的技術思想的鈷-碳氣體捕集裝置,其技術構成上的特徵在於,作爲鈷-碳氣體捕集裝置,在製造包括半導體産品的産品群中任意一個産品的時候,可捕集在所進行的金屬工藝中産生的鈷-碳氣體,包括:殼體,其配備有形成於內部的腔室,且配備有與所述腔室相通的流入口及流出口;發熱部件,其設置於殼體,爲了將流入殼體的腔室的鈷-碳氣體加熱至比流入之後溫度更高的溫度,將殼體的腔室內部溫度提高,從而引導鈷-碳氣體分離爲鈷複合體和碳複合體;鈷蒸鍍部件,其橫穿殼體的腔室而設置,在通過發熱部件加熱的狀態下,與鈷複合體進行表面接觸的同時使得鈷複合體氧化並蒸鍍;冷卻部件,其通過對殼體的壁體進行冷卻,從而使得與殼體的內表面接觸的碳複合體迅速冷卻的同時,引導固化及蒸鍍;通過發熱部件對殼體的腔室內部進行加熱,從而將流入腔室的鈷-碳氣體分離爲鈷複合體和碳複合體,對於已分離的鈷複合體和碳複合體,引導分別在加熱的鈷蒸鍍部件和冷卻的殼體的內表面進行蒸鍍。In order to achieve the above-mentioned object, the cobalt-carbon gas trapping device according to the technical idea of the present invention is characterized in that, in terms of technical structure, as the cobalt-carbon gas trapping device, a cobalt-carbon gas trapping device is used for manufacturing any one product in a product group including semiconductor products. At the same time, the cobalt-carbon gas generated in the metal process that is carried out can be trapped, including: a casing equipped with a chamber formed inside and equipped with an inflow port and an outflow port communicating with the chamber; A heat-generating component is provided in the casing, and in order to heat the cobalt-carbon gas flowing into the chamber of the casing to a higher temperature than the temperature after flowing into the casing, the temperature inside the chamber of the casing is raised, and the cobalt-carbon gas is induced to separate It is a cobalt composite and a carbon composite; a cobalt vapor deposition member is provided across the cavity of the casing, and in the state of being heated by the heating member, the cobalt composite is oxidized and evaporated while being in surface contact with the cobalt composite Plating; cooling member, which cools the carbon composite in contact with the inner surface of the casing by cooling the wall of the casing, and at the same time guides solidification and evaporation; Heating is performed to separate the cobalt-carbon gas flowing into the chamber into cobalt composites and carbon composites, and for the separated cobalt composites and carbon composites, the cobalt composites and carbon composites that have been separated are guided in the heated cobalt vapor deposition part and the cooled shell, respectively. The inner surface is evaporated.
在此,特徵在於,對於通過碳複合體包裹鈷複合體的結構形成的鈷-碳氣體粒子,發熱部件以使得鈷複合體加熱膨脹的溫度進行加熱,從而引導碳複合體與鈷複合體分離,爲了將鈷複合體氧化並蒸鍍,鈷蒸鍍部件被加熱至比殼體的腔室內部的溫度更高的溫度,爲了引導碳複合體的固化及蒸鍍,殼體的內表面被冷卻至比流入殼體的腔室之後的鈷-碳氣體溫度急劇降低的溫度。Here, it is characterized in that the heat generating member heats the cobalt-carbon gas particles formed by the structure in which the cobalt composite is wrapped by the carbon composite at a temperature at which the cobalt composite is heated and expanded, thereby guiding the separation of the carbon composite and the cobalt composite, In order to oxidize and vaporize the cobalt composite, the cobalt vapor deposition member is heated to a temperature higher than the temperature inside the chamber of the case, and the inner surface of the case is cooled to a temperature that induces solidification and vapor deposition of the carbon composite. The temperature is sharply lower than the temperature of the cobalt-carbon gas after flowing into the chamber of the housing.
此外,特徵在於,鈷蒸鍍部件由作爲具有網狀的板的金屬網(metal lath)構成,以便鈷複合體和碳複合體從上側向下側通過的同時進行表面接觸。Moreover, it is characterized in that the cobalt vapor deposition member is composed of a metal lath as a plate having a mesh shape so that the cobalt composite body and the carbon composite body are in surface contact while passing from the upper side to the lower side.
此外,特徵在於,多個鈷蒸鍍部件鄰接並上下隔開配置,在隔開的間隙設置有發熱部件,從而鈷蒸鍍部件可在發熱部件的附近被加熱。In addition, it is characterized in that a plurality of cobalt vapor deposition members are arranged adjacent to each other and spaced up and down, and heat generating members are provided in the spaced gaps, so that the cobalt vapor deposition members can be heated in the vicinity of the heat generating members.
此外,特徵在於,發熱部件包括:線形加熱器,其沿鈷蒸鍍部件設置爲線狀;加熱接觸片,其沿線形加熱器外周面設置爲翼狀,使得針對鈷複合體的加熱接觸面積變大。In addition, it is characterized in that the heat generating part includes: a wire-shaped heater arranged in a wire shape along the cobalt vapor deposition member; a heating contact piece arranged in a wing shape along the outer peripheral surface of the wire-shaped heater, so that the heating contact area for the cobalt composite body becomes big.
此外,特徵在於,加熱接觸片沿線形加熱器的外周面以螺旋形的形狀連續並纏繞設置。Furthermore, it is characterized in that the heating contact piece is continuously and wound in a spiral shape along the outer peripheral surface of the linear heater.
此外,特徵在於,還包括輔助蒸鍍部件,其在與鈷蒸鍍部件的下側隔開的地點橫穿殼體的腔室而設置,與未在鈷蒸鍍部件蒸鍍而通過的鈷複合體進行表面接觸的同時,使其氧化並蒸鍍,輔助蒸鍍部件由作爲具有網狀的板的金屬網(metal lath)構成,使得鈷複合體和碳複合體從上側向下側通過的同時進行表面接觸,多個輔助蒸鍍部件鄰接並上下隔開配置,以比鈷蒸鍍部件的間隔更窄的間隔稠密地配置,並加熱至比鈷蒸鍍部件的表面溫度更低的表面溫度。In addition, it is characterized by further comprising an auxiliary vapor deposition member provided across the chamber of the casing at a point spaced apart from the lower side of the cobalt vapor deposition member, and composited with cobalt that has not been vapor-deposited on the cobalt vapor deposition member but passed through. The cobalt composite body and the carbon composite body pass from the upper side to the lower side while the cobalt composite body and the carbon composite body pass from the upper side to the lower side. In surface contact, a plurality of auxiliary vapor deposition members are arranged adjacent to each other and spaced apart from each other, densely arranged at intervals narrower than those of the cobalt vapor deposition members, and heated to a surface temperature lower than the surface temperature of the cobalt vapor deposition members.
此外,特徵在於,鈷蒸鍍部件和輔助蒸鍍部件在殼體的腔室交替並設置有多個。Moreover, it is characterized in that a plurality of cobalt vapor deposition members and auxiliary vapor deposition members are alternately provided in the chamber of the casing.
此外,特徵在於,設置於流出口的流出管的上端部從殼體的腔室底面向上側凸出,從而進行抑制,防止未在殼體的腔室蒸鍍的鈷複合體和碳複合體流出。In addition, it is characterized in that the upper end of the outflow pipe provided at the outflow port protrudes upward from the bottom surface of the chamber of the case, thereby suppressing the outflow of the cobalt composite and the carbon composite that are not vapor-deposited in the chamber of the case. .
此外,特徵在於,殼體的壁體形成爲在內部具有隔離空間的雙重壁結構,冷卻部件是使得冷卻水沿殼體壁體的隔離空間流通的冷卻水注入管和冷卻水排出管。Moreover, it is characterized in that the wall of the casing is formed into a double-walled structure having an isolation space inside, and the cooling member is a cooling water injection pipe and a cooling water discharge pipe that allow cooling water to flow along the isolation space of the casing wall.
此外,特徵在於,在形成於殼體的壁體內部的隔離空間,沿殼體的周圍方向交替設置有垂直地形成的多個第一引導隔板和第二引導隔板,第一引導隔板向上側傾斜,從而允許冷卻水向下側流動,第二引導隔板向下側傾斜,從而允許冷卻水向上側流動,由此冷卻水在殼體的壁體內部隔離空間中畫之字形的同時,引導冷卻水沿殼體的周圍方向流動。Moreover, it is characterized in that a plurality of vertically formed first guide partitions and second guide partitions are alternately provided along the peripheral direction of the housing in the isolation space formed inside the wall of the housing, and the first guide partitions The second guide partition is inclined downward to allow the cooling water to flow upward, thereby allowing the cooling water to zigzag in the isolation space inside the wall of the housing , guide the cooling water to flow in the surrounding direction of the casing.
此外,特徵在於,殼體的上面通過能開閉的上部蓋形成,在上部蓋的內部形成有冷卻水流通孔,其使得冷卻水通過冷卻水注入管注入並沿周圍方向循環後沿冷卻水排出管排出,從而引導與上部蓋的下側表面接觸的碳複合體的蒸鍍。In addition, it is characterized in that the upper surface of the casing is formed by an upper cover that can be opened and closed, and a cooling water flow hole is formed inside the upper cover, so that the cooling water is injected through the cooling water injection pipe and circulated in the peripheral direction, and then along the cooling water discharge pipe. discharge, thereby guiding the vapor deposition of the carbon composite in contact with the lower surface of the upper cover.
另外,本發明的鈷-碳氣體捕集方法,其技術構成上的特徵在於,作爲一種鈷-碳氣體捕集方法,在製造包括半導體産品的産品群中任意一個産品的時候,可對在所進行的金屬工藝中産生的鈷-碳氣體進行捕集,其對密閉的腔室的內部進行加熱,首先將流入腔室的鈷-碳氣體分離爲鈷複合體和碳複合體,對已分離的鈷複合體和碳複合體分別進行區分並蒸鍍。In addition, the cobalt-carbon gas trapping method of the present invention is characterized in that, as a cobalt-carbon gas trapping method, when manufacturing any one product in a product group including semiconductor products, it can The cobalt-carbon gas generated in the metal process is captured, and it heats the interior of the closed chamber. First, the cobalt-carbon gas flowing into the chamber is separated into a cobalt composite and a carbon composite, and the separated cobalt-carbon gas is separated. The cobalt complex and the carbon complex are separated and vapor-deposited, respectively.
在此,特徵在於,爲了將腔室中的鈷-碳氣體分離爲鈷複合體和碳複合體,使得碳複合體包裹的鈷複合體加熱膨脹。Here, in order to separate the cobalt-carbon gas in the chamber into the cobalt complex and the carbon complex, the cobalt complex enclosed by the carbon complex is heated and expanded.
此外,特徵在於,對於已分離的鈷複合體,使其與鈷蒸鍍部件的表面接觸,從而進行氧化並蒸鍍,所述鈷蒸鍍部件被加熱至比腔室的內部溫度高的溫度,對於已分離的碳複合體,使其與其他部件的表面接觸,從而迅速冷卻至固化及蒸鍍,所述其他部件被冷卻至比鈷-碳氣體流入腔室的溫度低的溫度。Furthermore, it is characterized in that the separated cobalt composite is oxidized and vapor-deposited by being brought into contact with the surface of a cobalt vapor deposition member heated to a temperature higher than the internal temperature of the chamber, The separated carbon composite is brought into contact with the surface of other parts, which are cooled to a temperature lower than the temperature at which the cobalt-carbon gas flows into the chamber, to be rapidly cooled to solidification and evaporation.
根據本發明的鈷-碳氣體捕集裝置將鈷-碳氣體分離爲鈷複合體和碳複合體後,對這些已分離的鈷複合體和碳複合體單獨進行區分並蒸鍍,從而可更有效地進行捕集。According to the cobalt-carbon gas trapping device of the present invention, after the cobalt-carbon gas is separated into cobalt composites and carbon composites, and the separated cobalt composites and carbon composites are separated and vapor-deposited, it can be more efficiently to capture.
參照附圖對根據本發明的實施例的鈷-碳氣體捕集裝置進行詳細地說明。本發明可進行多種變更並具有各種各樣的形態,將特定實施例在圖中例示並欲在本文進行詳細地說明。但是,這不是要將本發明限定於特定的公開形態,應理解爲包括在本發明的思想及技術範圍內的所有變更、均等物乃至代替物都包括在內。說明各附圖的同時,對於類似的構成要素使用了類似的參照標號。就附圖而言,爲了確保本發明的明確性比實際放大了結構物的尺寸並示出,或爲了理解概略構成而比實際縮小了結構物的尺寸並示出。A cobalt-carbon gas trapping device according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. The present invention is capable of various modifications and forms, and specific embodiments are illustrated in the drawings and are intended to be described in detail herein. However, this is not intended to limit the present invention to a specific disclosed form, and it should be understood that all modifications, equivalents, and substitutes included within the spirit and technical scope of the present invention are included. While describing the drawings, similar reference numerals are used for similar components. In the drawings, in order to ensure the clarity of the present invention, the size of the structure is enlarged and shown, or the size of the structure is reduced and shown in order to understand the schematic configuration.
此外,第一及第二等術語可在說明多種構成要素時使用,但所述構成要素不受所述用語的限制。所述用語僅僅作爲將一個構成要素與其他的構成要素區別開來的目的而使用。例如,在不脫離本發明的權利範圍的情况下,第一構成要素可被命名爲第二構成要素,類似地,第二構成要素也可被命名爲第一構成要素。另外,如果沒有其他的定義,在此使用的包括技術術語或科學術語在內的所有術語具有和本發明所屬的技術領域內具備一般知識的人員通常理解的含義相同的含義。和通常使用的字典中所定義的含義相同的術語應解釋爲,具有與相關技術的文脉上具備的含義相一致的含義,如果本申請中沒有明確地定義,則不以上地或過度地解釋爲形式性的含義。In addition, terms such as first and second may be used to describe various components, but the components are not limited by the terms. The terms are used only for the purpose of distinguishing one component from other components. For example, the first constituent element may be named as the second constituent element, and similarly, the second constituent element may be named as the first constituent element without departing from the scope of rights of the present invention. Also, unless otherwise defined, all terms including technical or scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this invention belongs. Terms with the same meaning as defined in commonly used dictionaries should be interpreted as having meanings consistent with the meanings in the context of the related art, and if not clearly defined in this application, they should not be interpreted above or excessively for the formal meaning.
<實施例><Example>
圖2是根據本發明的實施例的鈷-碳氣體捕集裝置的立體圖,圖3是根據本發明的實施例的鈷-碳氣體捕集裝置的正面圖,圖4是根據本發明的實施例的鈷-碳氣體捕集裝置的平面圖,圖5是根據本發明的實施例的鈷-碳氣體捕集裝置的側面圖,圖6是根據本發明的實施例的鈷-碳氣體捕集裝置的底面圖,圖7是根據圖3的A-A的截面圖,圖8是根據圖4的B-B的截面圖,圖9是用於說明根據本發明的實施例的鈷-碳氣體捕集裝置的內部構成的截面立體圖,圖10是在根據本發明的實施例的鈷-碳氣體捕集裝置去除殼體壁體的外部板並示出壁體內部的構成的參照圖。2 is a perspective view of a cobalt-carbon gas trapping device according to an embodiment of the present invention, FIG. 3 is a front view of a cobalt-carbon gas trapping device according to an embodiment of the present invention, and FIG. 4 is an embodiment of the present invention FIG. 5 is a side view of the cobalt-carbon gas trapping device according to the embodiment of the present invention, and FIG. 6 is the cobalt-carbon gas trapping device according to the embodiment of the present invention. Bottom view, FIG. 7 is a sectional view according to A-A of FIG. 3 , FIG. 8 is a sectional view according to B-B of FIG. 4 , and FIG. 9 is for explaining the internal structure of the cobalt-carbon gas trapping device according to the embodiment of the
如圖所示,根據本發明的實施例的鈷-碳氣體捕集裝置包括殼體110、發熱部件120、鈷蒸鍍部件130、輔助蒸鍍部件140和冷卻部件114a、114b。As shown, the cobalt-carbon gas trapping device according to the embodiment of the present invention includes a
根據本發明的實施例的鈷-碳氣體捕集裝置構成爲,通過發熱部件120對殼體110的腔室內部進行加熱,從而將流入腔室的鈷-碳氣體分離爲鈷複合體和碳複合體,對於已分離的鈷複合體和碳複合體,在加熱的鈷蒸鍍部件130和冷卻的殼體110的內表面單獨進行蒸鍍,從而可有效地捕集鈷-碳氣體。The cobalt-carbon gas trapping device according to the embodiment of the present invention is configured to separate the cobalt-carbon gas flowing into the chamber into a cobalt composite and a carbon composite by heating the inside of the chamber of the
以下,以上述各構成要素爲中心,對根據本發明的實施例的鈷-碳氣體捕集裝置進行詳細地說明。Hereinafter, the cobalt-carbon gas trapping device according to the embodiment of the present invention will be described in detail, focusing on the above-mentioned components.
殼體110在內部形成有較寬空間的腔室,在上部形成有供鈷-碳氣體流入的流入口110a,在下部形成有供在腔室內部蒸鍍後剩餘的其他鈷-碳氣體流出的流出口110b。殼體110的壁體111形成爲內部具有隔離空間111a的雙重壁結構,從使得冷卻水可注入並流動。The
如圖10所示,在隔離空間111a沿殼體110的周圍方向交替設置有垂直地形成的多個第一引導隔板113a和第二引導隔板113b。第一引導隔板113a在隔離空間111a向上側傾斜並設置,從而允許冷卻水向下側流動,第二引導隔板113b向下側傾斜並設置,從而允許冷卻水向上側流動。由此,冷卻水在殼體110的壁體111內部隔離空間111a中畫之字形的同時,沿殼體110的周圍方向流動。As shown in FIG. 10 , a plurality of vertically formed
另外,殼體110的上面通過能够開閉的上部蓋112形成。在此,在上部蓋112的內部形成有冷卻水流通孔112a,其使得冷卻水注入並沿周圍方向循環後排出,輔助蓋112b覆蓋其上側。如圖2和圖10所示,在形成於殼體110壁體111內部的隔離空間111a和上部蓋112的冷卻水流通孔112a流動的冷卻水通過分支的冷卻水注入管114a連接的同時進行供給,同時通過分支的冷卻水排出管114b排出。Moreover, the upper surface of the
如此,殼體110壁體111內部整體配備有隔離空間111a,冷卻水以填滿的狀態在隔離空間111a內流動,並配備有冷卻水流通孔112a以便冷卻水流動至上部蓋112,根據這樣的構成,可以使用具有15℃左右的溫度的新鮮的冷卻水使得殼體110內表面非常有效地冷卻。由此,在殼體110腔室,與鈷複合體分離的碳複合體在設定爲大約250℃的溫度的腔室內部的高溫氛圍中移動的同時,無法蒸鍍在具有比250℃更高或類似表面溫度的鈷蒸鍍部件130或輔助蒸鍍部件140的表面,與通過冷卻水冷卻至不到60℃的溫度的殼體110內表面接觸的瞬間迅速冷卻,固化的同時迅速地蒸鍍。In this way, the interior of the
在殼體110的上部蓋112的左邊和右邊設置有一對把手116,抓住把手116可簡單地搬運,沿殼體110的下側還設置有金屬沖孔板150,其與殼體110底面隔開地結合。這樣的金屬沖孔板150使得殼體110底面不直接與地面接觸,從而可保護室內底部不受損傷。如圖所示,殼體110形成爲四角的盒子形狀,配備有把手116,還設置有金屬沖孔板150,根據這樣的構成可以知道根據本發明的實施例的鈷-碳氣體捕集裝置是最優化的,可非常簡單地搬運和設置。A pair of
發熱部件120設置於殼體110,引入電源後發熱,爲了將流入殼體110的腔室的鈷-碳氣體加熱至比流入之後溫度更高的溫度,提高殼體110腔室的內部溫度,從而起到引導鈷-碳氣體分離爲鈷複合體和碳複合體的作用。在此,發熱部件120的加熱溫度應該是對於由碳複合體包括鈷複合體的結構形成的鈷-碳氣體粒子來說達到使得鈷複合體加熱膨脹的溫度的水平。如果鈷複合體加熱膨脹,則包裹其周圍的碳複合體活潑地分離的同時,只要分別對其施加適當條件,則成爲可有效地蒸鍍的狀態。作爲參考,本案申請人接受委托的某公司的半導體製造時産生鈷-碳氣體的情况,由於鈷-碳氣體粒子在大約250℃左右開始活潑地分離爲鈷複合體和碳複合體,因此通過發熱部件120的發熱,將殼體110的腔室內部溫度設定爲上升至250℃爲止。由此,顯示約100℃的溫度的鈷-碳氣體流入維持250℃的內部溫度的殼體110的腔室內部的時候,活潑地分離爲鈷複合體和碳複合體。但是,由於每個製造企業形成鈷-碳氣體的鈷複合體和碳複合體的組成不一定,因此鈷-碳氣體粒子被活潑地分離爲鈷複合體和碳複合體時需要的溫度和根據其的殼體腔室的設定溫度有偏差,通過反復的實驗可以知道適當溫度。重要的點在於,通過發熱部件120,殼體110的腔室內部溫度應該設定爲用於引導鈷-碳氣體活潑地分離爲鈷複合體和碳複合體的溫度。The heat-generating
在此,發熱部件120包括:線形加熱器121,其沿鈷蒸鍍部件130設置爲線狀;面狀的加熱接觸片122,其沿線形加熱器121外周面設置爲翼狀。加熱接觸片122起到將僅通過線形加熱器121不足的表面積加寬的作用。如此,如果通過加熱接觸片122將表面積加寬至充分的標準,則可將與殼體110的腔室內部臨近設置的鈷蒸鍍部件130更訊速地加熱。並且,加熱接觸片122與鈷複合體進行表面接觸,從而得以一起執行蒸鍍鈷複合體的功能。加熱接觸片122不是單純地多個圓盤沿線形加熱器121連續配置的形態,如圖8及圖9所示,可關注到加熱接觸片122是沿線形加熱器121外周面以螺旋形的形態連續並以纏繞的形態(就像旋風薯片一樣)設置。如此,如果加熱接觸片122以螺旋形的形態連續並纏繞設置,則加熱接觸片122是形成爲歪斜的傾斜面而非垂直面的狀態,因此和主要從上側向下側移動的鈷複合體實現更强烈的接觸,從而蒸鍍效率也變高。爲了向發熱部件120的線形加熱器121引入電源,在殼體110的上部蓋112設置有電源箱115,爲了引入電源,電源箱115配備有用於插入電源插頭的電源端子115a。Here, the
鈷蒸鍍部件130橫穿殼體110的腔室而設置,在通過發熱部件120加熱的狀態下,與鈷複合體進行表面接觸的同時起到使得鈷複合體氧化並蒸鍍的作用。爲此,鈷蒸鍍部件130由作爲具有網狀的板的金屬網(metal lath)構成,以便鈷複合體和碳複合體從上側向下側通過的同時進行表面接觸。在此,如圖8及圖9所示,多個鈷蒸鍍部件130鄰接並上下隔開配置,在隔開的間隙設置有發熱部件120並通過模塊(M1)一體化。由此,鈷蒸鍍部件130可在發熱部件120的附近直接被加熱。爲了使得鈷複合體氧化並蒸鍍,鈷蒸鍍部件130應該被加熱至比殼體110的腔室內部的溫度更高的溫度,如此,通過以發熱部件120爲中心鄰接上側與下側而設置鈷蒸鍍部件130的配置方式無需另外的溫度控制或追加構成。The cobalt
輔助蒸鍍部件140在與鈷蒸鍍部件130的下側隔開的地點橫穿殼體110的腔室而設置,與未在鈷蒸鍍部件130蒸鍍而通過的鈷複合體進行表面接觸的同時,起到使其氧化並蒸鍍的作用。輔助蒸鍍部件140與鈷蒸鍍部件130相同,作爲具有網狀的板的金屬網(metal lath)以上下隔開配置的形態設置,以便鈷複合體和碳複合體從上側向下側通過的同時進行表面接觸。但是,如圖8及圖9所示,輔助蒸鍍部件140以比鈷蒸鍍部件130的金屬網隔離距離更窄的形式配置。並且,優選地,輔助蒸鍍部件140以比鈷蒸鍍部件130更稠密的網狀形態形成,從而使得對於鈷複合體的接觸密度比鈷蒸鍍部件130更高且具有差別化。如此設置的輔助蒸鍍部件140與鈷蒸鍍部件130差別化,並加熱爲具有比鈷蒸鍍部件130更低的表面溫度,與鈷複合體接觸並以較窄間隔稠密地配置兩個,因此通過這樣的差別化構成有利於使得未在鈷蒸鍍部件130進行蒸鍍的鈷複合體更加徹底地蒸鍍。鈷蒸鍍部件130和輔助蒸鍍部件140在殼體110的腔室交替並設置多個,從而可提高對於鈷複合體的捕集量。The auxiliary
冷卻部件114a、114b對殼體110的壁體111進行冷卻的同時,將殼體110的內表面溫度降低到一定溫度以下,從而引導與殼體110的內表面接觸的碳複合體的固化及蒸鍍。如圖2和圖10所示,冷卻部件114a、114b包括冷卻水注入管114a和冷卻水排出管114b,使得冷卻水沿殼體110壁體111的隔離空間流通。在此,冷卻水注入管114a與貯存冷卻水的冷卻水箱連接,將從冷卻水箱供給的新鮮的冷卻水分支並注入殼體110壁體111的隔離空間111a和上部蓋112的冷卻水流通孔112a。當然,冷卻水注入管114a也可以直接與上水道而非冷卻水箱連接並接收冷卻水供給。如此,根據本發明的實施例的鈷-碳氣體捕集裝置可關注的點在於,在殼體110壁體111及上部蓋112設置隔離空間111a和冷卻水流通孔112a並配備用於將冷卻水注入和排出的冷卻水注入管114a和冷卻水排出管114b,只通過上述簡單的構成,可在殼體110的幾乎整個內表面形成可使得碳複合體迅速冷卻並蒸鍍的充分的面積和溫度條件。在此,爲了形成用於將碳複合體蒸鍍在殼體110的內表面的相同的條件,可以想到在殼體110壁體111連續地設置珀耳帖元件的構成,但使用珀耳帖元件的情况缺點在於,僅用低廉的設置及維持費用來冷卻殼體110壁體111並在壁體111整體形成均勻的溫度並不容易。The
如此,使用根據本發明的鈷-碳氣體捕集裝置將鈷-碳氣體分離爲鈷複合體和碳複合體後,將已分離的鈷複合體和碳複合體單獨進行區分並蒸鍍,從而可更有效果的捕集。通過本案申請人的自身比較實驗得到了令人鼓舞的結果,即與通過現有的捕集裝置將鈷-碳氣體直接蒸鍍的情况相比較,通過將鈷-碳氣體分離爲鈷複合體和碳複合體後將已分離的鈷複合體和碳複合體單獨進行區分並蒸鍍的方法可實現兩倍以上的捕集。In this way, after the cobalt-carbon gas is separated into cobalt composites and carbon composites using the cobalt-carbon gas trapping device according to the present invention, the separated cobalt composites and carbon composites are separately separated and vapor-deposited, whereby it is possible to more effective capture. Encouraging results have been obtained through the applicant's own comparative experiments, namely, by separating the cobalt-carbon gas into a cobalt complex and carbon, compared with the direct evaporation of the cobalt-carbon gas through the existing trapping device After the composites, the separated cobalt composites and carbon composites are separated and vapor-deposited separately, which can achieve more than twice the trapping.
以上,對本發明的優選實施例進行了說明,但是本發明可以使用多樣的變化和變更及均等物。本發明可以將實施例適當地變形並相同地應用是毋庸置疑的。因此,上述記載內容不限定通過下述權利要求書的界限而確定的本發明的範圍。The preferred embodiments of the present invention have been described above, but the present invention can employ various changes, modifications, and equivalents. It goes without saying that the present invention can be appropriately modified in the embodiments and applied equally. Therefore, the above description does not limit the scope of the present invention, which is defined by the limits of the following claims.
以上所述僅為本發明較佳可行實施例而已,舉凡應用本發明說明書及申請專利範圍所爲之等效變化,理應包含在本發明之專利範圍內。The above description is only a preferred feasible embodiment of the present invention, and all equivalent changes made by applying the description of the present invention and the scope of the patent application should be included in the patent scope of the present invention.
[習用]
10:處理室
30:真空泵
60:泵送管道
70:捕集管
9:粉末
[本發明]
110:殼體
110a:流入口
110b:流出口
111:壁體
111a:隔離空間
112:上部蓋
112a:冷卻水流通孔
112b:輔助蓋
113a:第一引導隔板
113b:第二引導隔板
114a:冷卻水注入管
114b:冷卻水排出管
115:電源箱
115a:電源端子
116:把手
120:發熱部件
121:線形加熱器
122:加熱接觸片
130:鈷蒸鍍部件
140:輔助蒸鍍部件
150:金屬沖孔板
M1:模塊
[accustomed to]
10: Processing room
30: Vacuum pump
60: Pumping pipeline
70: Capture tube
9: Powder
[this invention]
110:
圖1是用於說明根據現有技術的捕集裝置的參照圖。 圖2是根據本發明的實施例的鈷-碳氣體捕集裝置的立體圖。 圖3是根據本發明的實施例的鈷-碳氣體捕集裝置的正面圖。 圖4是根據本發明的實施例的鈷-碳氣體捕集裝置的平面圖。 圖5是根據本發明的實施例的鈷-碳氣體捕集裝置的側面圖。 圖6是根據本發明的實施例的鈷-碳氣體捕集裝置的底面圖。 圖7是根據圖3的A-A的截面圖。 圖8是根據圖4的B-B的截面圖。 圖9是用於說明根據本發明的實施例的鈷-碳氣體捕集裝置的內部構成的截面立體圖。 圖10是在根據本發明的實施例的鈷-碳氣體捕集裝置去除殼體壁體的外部板並示出壁體內部的構成的參照圖。 FIG. 1 is a reference diagram for explaining a trapping device according to the related art. 2 is a perspective view of a cobalt-carbon gas trapping device according to an embodiment of the present invention. 3 is a front view of a cobalt-carbon gas trapping device according to an embodiment of the present invention. 4 is a plan view of a cobalt-carbon gas trapping device according to an embodiment of the present invention. 5 is a side view of a cobalt-carbon gas trapping device according to an embodiment of the present invention. 6 is a bottom plan view of a cobalt-carbon gas trapping device according to an embodiment of the present invention. FIG. 7 is a sectional view according to A-A of FIG. 3 . FIG. 8 is a sectional view according to B-B of FIG. 4 . 9 is a cross-sectional perspective view for explaining the internal configuration of the cobalt-carbon gas trapping device according to the embodiment of the present invention. FIG. 10 is a reference diagram showing the constitution of the inside of the wall by removing the outer plate of the casing wall in the cobalt-carbon gas trapping device according to the embodiment of the present invention.
110:殼體 110: Shell
110a:流入口 110a: Inflow
110b:流出口 110b: Outflow outlet
111:壁體 111: Wall
111a:隔離空間 111a: Isolation Space
112:上部蓋 112: Upper cover
112a:冷卻水流通孔 112a: cooling water flow hole
112b:輔助蓋 112b: Auxiliary cover
115:電源箱 115: Power box
120:發熱部件 120: Heating parts
121:線形加熱器 121: Linear heater
122:加熱接觸片 122: Heating Contact Sheet
130:鈷蒸鍍部件 130: Cobalt Evaporated Parts
140:輔助蒸鍍部件 140: Auxiliary evaporation parts
150:金屬沖孔板 150: Metal perforated plate
M1:模塊 M1: Module
Claims (15)
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