TW202226467A - Semiconductor packaging and method of manufacturing thereof - Google Patents

Abstract

A semiconductor packaging and a manufacturing method thereof are provided. The semiconductor packaging includes a first substrate, a second substrate, a first bonding pad, a second bonding pad, a conductive bump, and a photosensitive thermal plastic layer. The first substrate and the second substrate are disposed opposite to each other. The first bonding pad is disposed on the first substrate. The second bonding pad is disposed on the second substrate. The conductive bump is sandwiched between the first bonding pad and the second bonding pad. The photosensitive thermal plastic layer is disposed between the first substrate and the second substrate. The photosensitive thermal plastic layer surrounds the first bonding pad, the second bonding pad, and the conductive bump.

Description

Semiconductor package structure and manufacturing method thereof

The present invention relates to a semiconductor package structure and a manufacturing method thereof, in particular to an improved semiconductor package structure and a manufacturing method thereof using a photosensitive thermoplastic layer.

In the general wafer docking process, chemical mechanical polishing is often used to grind the copper pillars before docking; however, if the wafers are docked with conductive bumps, solder pads will be formed first, and then the conductive bumps will be placed on the solder joints. Finally, the two wafers are connected to each other through the conductive bumps, but this method will cause the gap between the wafers and the wafers or between the conductive bumps and the conductive bumps to be too large. In addition, the use of chemical mechanical polishing in semiconductor manufacturing can lead to increased production costs. Therefore, there is a need for a semiconductor packaging structure and a manufacturing process of the semiconductor packaging structure to overcome the difficulties encountered at present.

The present invention provides a semiconductor package structure and a manufacturing method thereof to overcome the difficulties faced in the prior art.

To achieve the above objective, a semiconductor package structure provided by the present invention includes a first substrate, a second substrate, a first pad, a second pad, a conductive bump and a photosensitive thermoplastic layer. Specifically, the first substrate and the second substrate are arranged opposite to each other; the first pad is arranged on the first substrate; the second pad is arranged on the second substrate; the conductive bump is sandwiched between the first pad and the second substrate between the pads; and the photosensitive thermoplastic layer is disposed between the first substrate and the second substrate, and the photosensitive thermoplastic layer surrounds the first pad, the second pad and the conductive bump.

The present invention also provides a method for manufacturing a semiconductor package structure, which includes: providing a first substrate; forming a first pad on the first substrate; forming a photosensitive thermoplastic layer, wherein the photosensitive thermoplastic layer covers the first pad and the first pad a substrate; removing the photosensitive thermoplastic layer covering the first pad; providing a conductive bump, wherein the first end of the conductive bump is bonded to the first pad; providing a second substrate; forming a second pad on the first substrate and thermocompression bonding the first substrate and the second substrate, wherein the second end of the conductive bump is bonded to the second pad.

As shown in FIG. 1, in an embodiment of the present invention, a semiconductor package structure 100 includes a first substrate 101, a second substrate 102, a first pad 103, a second pad 104, a conductive bump 105, and a photosensitive thermoplastic layer 106.

Specifically, the first substrate 101 and the second substrate 102 are disposed opposite to each other, the first pads 103 are disposed on the first substrate 101 , and the second pads 104 are disposed on the second substrate 102 . In addition, the first substrate 101 and the second substrate 102 may further be provided with a protective layer 107, and the protective layer 107 can prevent the protective substrate from being scratched during the semiconductor packaging process. The first end of the conductive bump 105 is bonded to the first bonding pad 103, and the second end of the conductive bump 105 is bonded to the second bonding pad 104. In other words, the conductive bump 105 is sandwiched between the first bonding pad 103 and the second bonding pad 104. between pads 104 . Preferably, the conductive bumps 105 are solder balls, but not limited thereto. In the semiconductor package structure 100 , a photosensitive thermoplastic layer 106 is further disposed between the first substrate 101 and the second substrate 102 , and the photosensitive thermoplastic layer 106 also surrounds the first pads 103 , the second pads 104 and the conductive bumps 105 . Preferably, the photosensitive thermoplastic layer 106 includes a non-conductive polymer, further, the non-conductive polymer includes a thermoplastic resin. In another embodiment, the thermoplastic resin includes a non-polar resin and a weakly polar resin, and the non-polar resin has excellent insulating properties. Preferably, the non-polar resin is selected from the group consisting of polyethylene, polybutadiene and polytetrafluoroethylene.

Generally speaking, in the prior art, the distance between the center points of the conductive bumps adjacent to each other in the semiconductor package structure is about 30 micrometers to 40 micrometers. Compared with the prior art, the semiconductor package structure of the embodiment of the present invention can be further miniaturized, that is, the distance between the center points of the conductive bumps adjacent to each other in the semiconductor package structure is reduced to Between about 1 micron and 2 microns, and in the process of semiconductor packaging, the photosensitive thermoplastic layer will not be spilled due to temperature, and it can also prevent the occurrence of poor electrical properties.

In another embodiment of the present invention, a method of manufacturing a semiconductor package structure includes: providing a first substrate; forming a first bonding pad on the first substrate; forming a photosensitive thermoplastic layer, wherein the photosensitive thermoplastic layer covers the first bonding pad and a first substrate; remove the photosensitive thermoplastic layer covering the first pad; provide a conductive bump, wherein the first end of the conductive bump is bonded to the first pad; provide a second substrate; on the first substrate; and thermocompression bonding the first substrate and the second substrate, wherein the second end of the conductive bump is bonded to the second pad. In order that those skilled in the art to which the present invention pertains can clearly understand the manufacturing process of the semiconductor package structure, the method for manufacturing the semiconductor package structure is further described below.

As shown in FIG. 2 , a first substrate 101 is first provided, a protective layer 107 is formed on the first substrate 101 , and then a first pad 103 is formed on the first substrate 101 .

As shown in FIG. 3 , a photosensitive thermoplastic layer 106 is coated, and the photosensitive thermoplastic layer 106 covers the first pad 103 , the protective layer 107 and the first substrate 101 . Preferably, the photosensitive thermoplastic layer 106 includes a non-conductive polymer, further, the non-conductive polymer includes a thermoplastic resin. In another embodiment, the thermoplastic resin includes a non-polar resin and a weakly polar resin, and the non-polar resin has excellent insulating properties. Preferably, the non-polar resin is selected from the group consisting of polyethylene, polybutadiene and polytetrafluoroethylene.

As shown in FIG. 4 , the photosensitive thermoplastic layer 106 covering the first bonding pad 103 is removed by lithography etching to form a groove with a depth of about 10 μm to 20 μm. In other words, the distance between the top layer of the first bonding pad 103 and the top layer of the surrounding unremoved thermosensitive plastic layer 106 is about 10 to 20 μm, that is, the height of the unremoved photosensitive thermoplastic layer is greater than that of the first The height of the pads.

As shown in FIG. 5, a conductive bump 105 is provided, so that the first end of the conductive bump 105 is bonded to the first pad 103, wherein the conductive bump 105 is an alloy bump, and the height of the conductive bump 105 is about 30 microns to 40 microns. Next, a second substrate 102 is additionally provided, and a second pad 104 is formed on the first substrate 101, and finally, the first substrate 101 and the second substrate 102 are bonded by thermocompression in a temperature range of 300°C to 400°C. , so that the second ends of the conductive bumps 105 are bonded to the second pads 104 to form a semiconductor package structure. In another embodiment, when the conductive bumps 105 are solder balls, the first substrate 101 and the second substrate 102 can be bonded by thermocompression in a temperature range of 200°C to 300°C to form a semiconductor package structure However, those with ordinary knowledge in the technical field of the present invention can adjust the operating temperature of the thermocompression bonding according to the actual situation. It is worth mentioning that the distance between the center points of the conductive bumps adjacent to each other in the semiconductor package structure is reduced to about 1 micrometer to 2 micrometers through the photosensitive thermoplastic layer. In addition, in the process of semiconductor packaging, the photosensitive thermoplastic layer will not be spilled due to temperature, and can also prevent the occurrence of poor electrical properties. In addition, if a multilayer semiconductor package structure is to be formed, the above-mentioned steps are continuously repeated, so the details are omitted.

The above descriptions are only preferred embodiments of the present invention, and all other equivalent changes and modifications belong to the scope of the present invention.

100: Semiconductor packaging structure 101: The first substrate 102: Second substrate 103: First pad 104: Second pad 105: Conductive bumps 106: Photosensitive thermoplastic layer 107: Protective layer

FIG. 1 is a schematic diagram of a semiconductor package structure according to an embodiment of the present invention. 2 to 5 are schematic flowcharts of a method for manufacturing a semiconductor package structure according to another embodiment of the present invention.

100: Semiconductor packaging structure

101: The first substrate

102: Second substrate

103: First pad

104: Second pad

105: Conductive bumps

106: Photosensitive thermoplastic layer

107: Protective layer

Claims (10)

A semiconductor packaging structure, comprising: a first substrate; a second substrate, wherein the first substrate and the second substrate are disposed opposite to each other; a first pad, disposed on the first substrate; a second pad, disposed on the second substrate and corresponding to the first pad; a conductive bump sandwiched between the first pad and the second pad; and The photosensitive thermoplastic layer is disposed between the first substrate and the second substrate, wherein the photosensitive thermoplastic layer surrounds the first bonding pad, the second bonding pad and the conductive bump. The semiconductor package structure of claim 1, wherein the semiconductor package structure further comprises a protective layer, and the protective layer is disposed on the surfaces of the first substrate and the second substrate facing each other. The semiconductor package structure of claim 1, wherein the photosensitive thermoplastic layer comprises a non-conductive polymer. The semiconductor package structure of claim 3, wherein the non-conductive polymer comprises thermoplastic resin. The semiconductor package structure of claim 1, wherein the distance between the conductive bumps is between 1 micrometer and 2 micrometers. A method of fabricating a semiconductor package structure, comprising: providing a first substrate; forming a first pad on the first substrate; forming a photosensitive thermoplastic layer, wherein the photosensitive thermoplastic layer covers the first pad and the first substrate; removing the photosensitive thermoplastic layer covering the first bonding pad, wherein the height of the photosensitive thermoplastic layer not removed is greater than the height of the first bonding pad; providing a conductive bump, wherein a first end of the conductive bump is bonded to the first pad; providing a second substrate; forming a second pad on the first substrate; and The first substrate and the second substrate are bonded by thermocompression, wherein the second end of the conductive bump is bonded to the second pad. The method for fabricating a semiconductor package structure as described in claim 6, further comprising forming a protective layer on the surfaces of the first substrate and the second substrate facing each other. The method for fabricating a semiconductor package structure as described in claim 6, wherein the photosensitive thermoplastic layer surrounds the first pad, the second pad and the conductive bump The method for fabricating a semiconductor package structure as described in claim 6, wherein the photosensitive thermoplastic layer comprises a non-conductive polymer. The method for fabricating a semiconductor package structure as described in claim 6, wherein the thermocompression bonding of the first substrate and the second substrate is performed in a temperature range of 300°C to 400°C.

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