TW202225825A - Photomask, method of manufacturing same, and method of manufacturing display device - Google Patents

Abstract

The purpose of the present invention is to gradually tilt a photosensitive resist from the center to the outside. The photomask (1A) has, on a transparent substrate, a plurality of pattern-forming regions (A) having a predetermined shape and formed by stacking the pattern of the semi-permeable film and the pattern of the light-shielding film so as to partially overlap, and a light-transmitting part (7) in which the pattern-forming regions (A) are not formed. When a first region (D1) is defined as a region having a predetermined area including a center portion of the pattern formation region (A) and a second region (D2) is defined as a region having a predetermined area in an outer edge portion of the pattern formation region (A), the transmittance in the second region (D2) is higher than the transmittance in the first region (D1).

Description

Photomask, method for manufacturing the same, and method for manufacturing display device

The present invention relates to a photomask, a method for manufacturing the photomask, and a method for manufacturing a display device.

Techniques for forming a photoresist into a desired shape by exposure using a photomask are known. For example, Japanese Patent Document 1 discloses a method of manufacturing a multi-gray-scale photomask having a stepped pattern on at least one layer on the surface of a photomask substrate.

[Patent Documents] Patent Document 1: Japanese Patent Laid-Open No. 2018-45016 Non-patent literature 1

When exposure with a mask is used and a photoresist having a concavo-convex shape or the like is formed on a substrate to be transferred, it is desirable that the photoresist in an arbitrary region is gradually inclined from the center of the photoresist to the outside.

1 aspect of this invention aims at providing the photomask which can form the shape which inclined slowly with respect to the photosensitive resist of the board|substrate to be transferred, its manufacturing method, and the like.

In order to solve the above problems, according to one aspect of the mask of the present invention, there are a plurality of pattern forming regions on the transparent substrate, the pattern forming regions have a predetermined shape, and the predetermined shape includes at least two regions with different light transmittances from each other, The area including the predetermined area of the central part of the pattern formation area is defined as the first area; the area of the predetermined area at the outer edge of the pattern formation area is defined as the second area, and the light transmittance in the second area is higher than or lower than the transmittance of the first region.

In order to solve the above-mentioned problems, according to one aspect of the present invention, a method for manufacturing a photomask includes: a translucent region in which a translucent film is formed on a transparent substrate; and an overlapping region in which at least the translucent film and the light shielding film are laminated on the transparent substrate. on the substrate, so that the translucent film is closer to the transparent substrate than the light-shielding film; and the transparent region exposes the transparent substrate, which includes the following steps: a step of preparing a mask substrate (Mask Blanks), at least the semi-transparent film and the light-shielding film are laminated to form On the surface of the transparent substrate, the translucent film is made closer to the transparent substrate than the light-shielding film; in the step of forming a first photoresist pattern, a first photoresist film is formed on the surface of the photomask substrate, and a drawing device is used to display the first photoresist pattern on the surface of the photomask substrate. The first photoresist film is drawn on the resist film; the step of removing part of the light-shielding film by using the first photoresist pattern as a mask; the step of removing the exposed translucent film; the step of forming the second photoresist pattern, in the A second photoresist film is formed on the entire surface of the photomask, and a drawing device is used to draw the second photoresist film; and the step of removing part of the light-shielding film by using the second photoresist pattern as a photomask, when the step of removing part of the light-shielding film by the light-shielding film and half When the area of the predetermined area in the central part of the pattern formation area formed by the transparent film is defined as the first area, and the area of the predetermined area on the peripheral part of the pattern formation area is defined as the second area, the pattern formation area is formed such that the first area is formed. The light transmittance in the second region is higher than that in the first region.

In order to solve the above-mentioned problems, according to one aspect of the present invention, a method for manufacturing a photomask includes: a translucent region, in which a translucent film is formed on a transparent substrate; a transparent film; and a transparent area to expose the transparent substrate, which includes the following steps: a step of preparing a photomask substrate with a light-shielding film formed on the surface of the transparent substrate; a step of forming a first photoresist film on the surface of the photomask substrate; using The drawing device draws on the first photoresist film to form a first photoresist pattern; the first photoresist pattern is used as a photomask to remove part of the light shielding film; the entire surface of the photomask including the light shielding film is formed with half The step of transparent film; the step of forming a second photoresist on the surface of the semi-transparent film; the step of using a drawing device to draw on the second photoresist film to form a second photoresist pattern; and using the second photoresist pattern as a mask In the step of removing part of the transparent film, an area including a predetermined area of the central portion of the pattern forming area formed by the light-shielding film and the translucent film is defined as the first area, and the area of the predetermined area on the peripheral portion of the pattern forming area is defined as the first area. When the area is defined as the second area, the pattern forming area is formed such that the light transmittance in the second area is higher than that in the first area.

In order to solve the above-mentioned problems, according to one aspect of the present invention, a method for manufacturing a photomask includes: a semitransparent region in which a semitransparent film is formed on a transparent substrate; The transparent film is closer to the transparent substrate than the light-shielding film; and the transparent region exposes the transparent substrate, which includes the following steps: a step of preparing a photomask substrate, at least the translucent film and the light-shielding film are laminated and formed on the surface of the transparent substrate, so that the half The transparent film is closer to the transparent substrate than the light film; in the step of forming a first photoresist pattern, a first photoresist film is formed on the surface of the photomask substrate, and a drawing device is used to draw the first light on the first photoresist film Resist film; step of removing part of the light-shielding film by using the first photoresist pattern as a mask; step of removing the exposed translucent film; step of forming a second photoresist pattern, formed on the entire surface of the mask including the light-shielding film There is a second photoresist film, and the second photoresist film is drawn by a drawing device; and the step of removing part of the translucent film by using the second photoresist pattern as a photomask will include the pattern formed by the light shielding film and the translucent film An area of a predetermined area in a central portion of the formation area is defined as a first area, and when an area of a predetermined area on a peripheral portion of the pattern formation area is defined as a second area, the pattern formation area is formed such that light in the second area is transmitted ratio is lower than the light transmittance in the first region.

In order to solve the above-mentioned problems, according to one aspect of the present invention, a method for manufacturing a photomask includes: a translucent region, in which a translucent film is formed on a transparent substrate; a transparent film; and a transparent area to expose the transparent substrate, which includes the following steps: a step of preparing a photomask substrate with a light-shielding film formed on the surface of the transparent substrate; a step of forming a first photoresist film on the surface of the photomask substrate; using The drawing device draws on the first photoresist film to form a first photoresist pattern; the first photoresist pattern is used as a photomask to remove part of the light shielding film; the entire surface of the photomask including the light shielding film is formed with half The step of transparent film; the step of forming a second photoresist on the surface of the semi-transparent film; the step of using a drawing device to draw on the second photoresist film to form a second photoresist pattern; and the second photoresist pattern as light In the step of removing the part of the transparent film by the cover, an area including a predetermined area of the central part of the pattern forming area formed by the light shielding film and the translucent film is defined as the first area, and a predetermined area on the peripheral part of the pattern forming area is defined as the first area. When the area of the area is defined as the second area, the pattern forming area is formed such that the light transmittance in the second area is lower than the light transmittance in the first area. [Inventive effect]

According to one aspect of the present invention, a shape that is gradually inclined with respect to the photosensitive photoresist can be formed in any region of the photosensitive photoresist of the substrate to be transferred.

[First Embodiment]

Hereinafter, one embodiment of the present invention will be described in detail. FIG. 1 is a plan view showing the structure of a mask 1A of the present embodiment. FIG. 2a is a schematic view showing a pattern design formed in the pattern forming region of the photomask 1A, and FIG. 2b is a cross-sectional view showing the photomask 1A cut on a plane perpendicular to the transparent substrate 2 . In addition, FIG. 2b is an enlarged cross-sectional view showing the periphery of one pattern forming region A which will be described later.

As shown in FIG. 1 and FIGS. 2 a and 2 b , the photomask 1A has a structure in which a transparent substrate 2 , a semitransparent film 3 , an etching stopper film 4 , and a light shielding film 5 are stacked in this order. In addition, the semitransparent film 3, the etching stopper film 4, and the light shielding film 5 are not arranged in all regions of the transparent substrate 2, but are appropriately arranged in the pattern forming region A as shown in FIG. 2b.

The transparent substrate 2 is a light-transmitting substrate, and can be made of, for example, quartz glass. The semitransparent film 3 is a film that transmits a part of the irradiated light, and a chromium-based material such as chromium oxide, chromium nitride, and chromic acid nitride can be used, for example. The etching stopper film 4 is a film for preventing the translucent film 3 from being etched when the light shielding film 5 is etched. The etching stopper film 4 is made of a material that is not etched by the solvent used for etching the light shielding film 5 . As the etching stopper film 4, titanium, nickel, molybdenum silicide, or the like can be used, for example. The light-shielding film 5 is an opaque film, and an OD (Optical Density) value of 2.7 or more is suitable. As the light shielding film 5, for example, a chromium film can be used.

As shown in FIG. 1 , in the mask 1A, the pattern forming regions A are arranged in a grid-like pattern. The pattern forming area A is provided at a position corresponding to each pixel of the above-described display device. The region in which the pattern forming region A is not formed is the light-transmitting portion 7 that transmits light.

Hereinafter, the pattern design formed in the pattern forming area A in the photomask 1A will be described. In the following description, regarding the case of explaining the pattern design of the photomask, the case where the photomask is observed in a plane from the side opposite to the transparent substrate 2 side will be described.

As shown in Fig. 2a, the pattern forming region A of the photomask 1A has a circular shape. In the pattern forming area A of the photomask 1A, the overlapping area 10 where the light shielding film 5 and the translucent film 3 are overlapped is formed in a circular shape in the center portion including the center of the pattern forming area A. As shown in FIG. Further, in the pattern forming region A, a non-overlapping region 11 in which only the translucent film 3 is formed so as to surround the overlapping region 10 is formed. In other words, the non-overlapping region 11 is formed at the outer edge portion of the pattern forming region A. As shown in FIG. The non-overlapping region 11 is formed concentrically with respect to the overlapping region 10 .

In this invention, the light transmittance of the area|region of the predetermined area of the pattern formation area A is used as an index which shows the difference of the light transmittance of each part of the pattern formation area A. An area of a predetermined area including the central portion of the pattern forming area A is defined as a first area D1, and an area having a predetermined area of an outer edge portion of the pattern forming area A is defined as a second area D2. The first area D1 and the second area D2 are conceptual areas for explaining the difference in light transmittance between the central portion and the outer edge portion of the pattern forming area A. As shown in FIG. The central portion of the first region D1 and the central portion of the pattern forming region A slightly overlap with each other. Therefore, the first region D1 is a region including at least the overlapping region 10 . On the other hand, the center part of the 2nd area|region D2 is located in the outer edge part of the pattern formation area|region A. Therefore, the second region D2 is a region including at least the non-overlapping region 11 formed in the outer edge portion of the pattern forming region A. As shown in FIG. Since the first area D1 and the second area D2 are set in this way, the light transmittance of the second area D2 is higher than that of the first area D1. In addition, when the pattern forming area A is circular, the central part of the pattern forming area A refers to the center of the circle or a portion near the center.

When the first region D1 and the second region D2 are rectangular, the size of these regions is, for example, 1 μm×1 μm or more. In one aspect of the present invention, the diameter of the overlapping region 10 of the pattern region A in the photomask is 10-60 μm, and the radial width of the non-overlapping region 11 is 3-20 μm. The first area D1 and the second area D2 may be determined not to protrude from the pattern forming area A. FIG. When there are regions with different light transmittances in the first region D1 or the second region D2, the average light transmittance of each region is defined as the light transmittance of the first region D1 or the second region D2.

In the example shown in FIG. 2a, the first region D1 is a rectangular region including only the overlapping region 10 in the center portion of the pattern forming region A. As shown in FIG. The second region D2 is a region including only the non-overlapping region 11 formed on the outer edge. In the example shown in Fig. 2a, the first area D1 and the second area D2 are shown as rectangles, but the first area D1 and the second area D2 may be circular, polygonal, or the like. The setting method of the first area D1 and the second area D2 described above is the same as that of Modifications 1 to 7 and the second embodiment to be described later.

Fig. 3a is a schematic diagram showing the intensity of light irradiated to the photoresist film 20 when the positive photoresist film 20 on the substrate to be transferred is irradiated through the photomask 1A, and Fig. 3b is a diagram showing the light intensity on the substrate to be transferred A shape diagram of the photoresist film 20 after the photoresist film 20 is exposed and developed through a mask. Figure 3a shows that the darker the black area, the lower the light intensity irradiating the photoresist film 20. The same applies to Fig. 9a, Fig. 11a, Fig. 13a, Fig. 15a, Fig. 17a, Fig. 19a, and Fig. 21a to be described later.

As shown in FIG. 3 a , the presence of the light shielding film 5 in the central portion of the pattern forming region A reduces the intensity of light irradiated to the central portion of the photoresist film 20 . Furthermore, since only the semitransparent film 3 exists at the outer edge portion of the pattern forming area A to surround the overlapping area 10, the intensity of light irradiated to the photoresist film 20 increases from the center to the outside. This point is also the same for Modifications 1 to 7 to be described later. As a result, as shown in FIG. 3b, the photoresist film 20 after development is a region corresponding to the outer edge portion of the pattern forming region A of the photomask 1A, that is, the outer edge portion of the photoresist film 20 is gradually inclined shape.

As described above, in this embodiment, by exposing and developing the photoresist film 20 through the photomask 1A, the outer edge portion of the photoresist film 20 can be gradually inclined. In other words, the photoresist film 20 may be gradually inclined from the center to the outside.

In addition, in the mask 1A of the present embodiment, the non-overlapping region 11 is formed concentrically with respect to the overlapping region 10 . As a result, the intensity of light irradiated to the photoresist film 20 can be gradually increased in concentric circles from the center to the outer side of the photoresist film.

Next, the manufacturing method of 1 A of photomasks is demonstrated. FIGS. 4 to 7 are diagrams for explaining the method of manufacturing the photomask 1A. As shown in FIG. 4, in the manufacture of the photomask 1A, first, on the surface of the transparent substrate 2, a photomask substrate 30 ( Hereinafter, it will be referred to as the first step P1).

Next, the first photoresist film 40 is formed on the surface of the mask substrate 30 (hereinafter, referred to as the second step P2). After that, the first photoresist film 40 is drawn by a drawing device (hereinafter, referred to as the third step P3). In the third step P3, when the mask substrate 30 is observed in a plan view, drawing is performed so that the developed first photoresist film 40 forms the shape of the pattern forming region A (ie, an approximately circular shape).

Although not shown, in the third step P3, in the tenth step P10 to be described later, in order to perform an alignment called alignment, an alignment mark serving as an alignment reference may be formed at the same time. More specifically, alignment marks are formed at each corner of the transparent substrate 2 .

Next, the first photoresist film 40 is developed to remove the drawn region 40A in the first photoresist film 40 to form a first photoresist pattern (hereinafter, referred to as the fourth step P4). The third step P3 and the fourth step P4 are steps of forming a first photoresist pattern.

Next, as shown in FIG. 5 , the light-shielding film 5 is etched using the patterned first photoresist film 40 (ie, the first photoresist pattern) as a mask to form a pattern of the light-shielding film 5 (hereinafter, referred to as is the fifth step P5). In the fifth step P5 , only the light-shielding film 5 is etched and removed using a solvent that does not dissolve the etching stopper film 4 as a solvent for etching the light-shielding film 5 .

Next, using the first photoresist pattern and the light shielding film 5 as a mask, the etching stopper film 4 is removed (hereinafter, referred to as the sixth step P6). After that, the exposed translucent film 3 is removed by removing the etching stopper film 4 (hereinafter, referred to as the seventh step P7). Next, the remaining first photoresist film 40 is removed (hereinafter, referred to as the eighth step P8).

Next, as shown in FIG. 6, the second photoresist film 41 is formed on the entire surface of the photomask including the light shielding film 5 (hereinafter, referred to as the ninth step P9). After that, the second photoresist film 41 is drawn by a drawing device (hereinafter, referred to as the tenth step P10). In the tenth step P10, when the photomask is viewed in plan, the outer edge portion of the second photoresist film 41 is drawn in a substantially circular shape. Furthermore, in the tenth step P10, the area for drawing is positioned using the alignment marks formed in the third step P3.

Next, the area 41A drawn in the second photoresist film 41 is removed by developing the second photoresist film 41 to form a second photoresist pattern (hereinafter, referred to as the eleventh step P11 ). The ninth step P9, the tenth step P10 and the eleventh step P11 are steps of forming a second photoresist pattern.

Next, using the patterned second photoresist film 41 (that is, the second photoresist pattern) as a mask, the pattern of the light shielding film 5 is formed (hereinafter, referred to as the twelfth step P12). In the twelfth step P12 , as in the fifth step P5 , only the light-shielding film 5 is etched and removed using a solvent that does not dissolve the etching stopper film 4 as a solvent for etching the light-shielding film 5 .

Next, as shown in FIG. 7 , using the second photoresist pattern and the light shielding film 5 as a mask, the etching stopper film 4 is removed to form a pattern of the translucent film 3 (hereinafter, referred to as the thirteenth step P13 ). Finally, the remaining second photoresist film 41 is removed (hereinafter, referred to as the fourteenth step P14).

Through the above steps, the overlapping area 10 is formed into a circular shape at the center including the center of the pattern forming area A, and at the same time, a photomask 1A having a pattern forming area that surrounds the overlapping area 10 can be manufactured. The non-overlapping region 11 is formed in the manner.

Further, when a solvent that does not dissolve the translucent film 3 is used as a solvent for etching the light shielding film 5, a photomask substrate without the etching stopper film 4 can be used. For example, if the light shielding film 5 and the semitransparent film 3 are formed of materials having mutually different etching resistances, even when the etching stopper film 4 is not provided, only the light shielding film 5 can be selectively etched.

Next, the manufacturing method of the display device using the photomask 1A of this Example is demonstrated. The use of the photomask 1A of the present invention is not limited. In particular, in a display device substrate formed by stacking a plurality of layers, the photomask of the present invention can be advantageously applied to a multi-step photomask which can be formed from the center of an arbitrary pattern to a direction with one photomask 1A. A photoresist shape that slopes slowly on the outside.

For example, the manufacturing method of the display device using the photomask 1A in this embodiment includes: a step of preparing the photomask 1A and a photoresist forming step of using the photomask 1A to form a desired photoresist shape. The photoresist forming step is a step of transferring the transfer pattern of the photomask 1A to the substrate to be transferred by using an exposure device. The manufacturing method of the display device through the mask 1A in this embodiment also includes various other necessary steps.

As described above, the photomask 1A of the present invention can be formed in the outer edge portion of the pattern forming region A, since it is possible to form a photoresist shape gradually inclined in the direction from the center of the pattern to the outside, for example, it can be placed at any position of the display device. The advantage of forming the desired pattern on it.

The photomask 1A of the present invention can be exposed using a known exposure apparatus for liquid crystals and organic light emitting diodes (organic EL). For example, as the exposure device, exposure light of a single wavelength having a peak at 300 to 500 nanometers (nm) or exposure light of a broadband light source is used, and a numerical aperture (NA) of 0.08 to 0.12 and a multiple equal to that of conventional ones can be used Projection exposure apparatus for the coherence factor (σ) of the optical system rate. In addition, it can be applied even if the numerical aperture is 0.12 or more. Of course, the photomask 1A can also be used as a photomask for proximity exposure.

[Variation 1]

A modification of the pattern forming area A of the photomask 1A of the first embodiment will be described. Fig. 8a is a plan view showing the pattern forming area A of this modification; Fig. 8b is a diagram showing the light intensity irradiated to the photoresist film 20 when light is irradiated to the photoresist film 20 through the photomask 1A of this modification; Fig. 8c is a view showing the shape of the photoresist film 20 after the photoresist film 20 is exposed and developed through the photomask 1A of this modification.

As shown in Fig. 8a, in the present modification, when the pattern forming region A is viewed in plan view, lattice pattern regions 12 are formed, and the lattice pattern regions 12 are alternately arranged with rectangular overlapping regions 10 and rectangular non-overlapping regions 11, in which rectangular The overlapping area 10 is that the translucent film 3 and the light-shielding film 5 are overlapped; the rectangular non-overlapping area 11 is that the light-shielding film is not overlapped on the translucent film 3 . Moreover, in this modification, the area|region where the light shielding film 5 does not overlap the translucent film 3 is formed in the periphery of the lattice pattern area 12. That is, the pattern forming area A of the present modification has the following areas: (1) a mixed area, including an overlapping area 10 and a non-overlapping area 11, the overlapping area 10 is laminated so that the semi-transparent film pattern and the light-shielding film pattern overlap; non-overlapping area The area 11 is that the light shielding film 5 does not overlap the translucent film 3; The first area D1 in the present modification exists inside the lattice pattern area 12 and is set to include at least the rectangular overlapping area 10 located at the center of the pattern forming area A. As shown in FIG. That is, the first area D1 may be an area including only the overlapping area 10 located at the center of the pattern forming area A, or an area including the overlapping area 10 and the non-overlapping area 11 around the overlapping area 10 . The second region D2 in this modification is set in the outer region of the lattice pattern region 12 , that is, in the non-overlapping region 11 formed in the outer edge portion of the pattern forming region A. As shown in FIG.

With this structure, as shown in FIG. 8b, since the light shielding film 5 exists in the central portion of the pattern forming region A, the light irradiated to the central portion of the photoresist film 20 increases as the area ratio of the light shielding film 5 increases. Intensity will decrease. Furthermore, since only the semitransparent film 3 exists at the outer edge portion of the pattern forming area A to surround the overlapping area 10, the intensity of light irradiated to the photoresist film 20 increases from the center to the outside. As a result, as shown in FIG. 8 c , the outer edge of the photoresist film 20 after development is gradually inclined. That is, by using the photomask 1A of the present modification, the photoresist film 20 can be gradually inclined from the center to the outer side.

[Variation 2]

Another modification of the pattern forming region A of the photomask 1A of the first embodiment will be described. Fig. 9a is a plan view showing the pattern forming area A of this modification; Fig. 9b is a diagram showing the intensity of light irradiated to the photoresist film 20 when light is irradiated to the photoresist film 20 through the photomask 1A of this modification; FIG. 9 c is a view showing the shape of the photoresist film 20 after the photoresist film 20 is exposed and developed through the photomask 1A of the present modification.

As shown in FIG. 9a , in this modification, when the pattern forming area A is viewed in plan view, an overlapping area 10 where the semitransparent film 3 and the light shielding film 5 overlap is formed in the central area 14 of the pattern forming area A. In addition, in this modification, the region 15 is formed outside the central region 14 , and the region 15 includes the overlapping region 10 where the translucent film 3 overlaps the light-shielding film 5 and a plurality of non-transparent films where the light-shielding film 5 does not overlap the translucent film 3 . Overlap area 11. In the region 15, the non-overlapping region 11 is formed so that the area increases toward the outer edge portion. Further, on the periphery of the region 15, a region where the light shielding film 5 does not overlap the translucent film 3 is formed. The first area D1 in this modification is set inside the center area 14 . The second region D2 in this modification is set in the non-overlapping region 11 formed in the outer edge portion of the pattern forming region A. As shown in FIG.

With this structure, as shown in FIG. 9 b , the intensity of the light irradiated to the outer edge portion of the photoresist film 20 becomes higher than the intensity of the light irradiated to the central portion of the photoresist film 20 . As a result, as shown in FIG. 9c, the photoresist film 20 after development can be formed in a shape in which the outer edge portion is gradually inclined. In other words, the photoresist film 20 may be gradually inclined from the center to the outside.

[Variation 3]

Another modification of the pattern forming region A of the photomask 1A of the first embodiment will be described. Fig. 10a is a plan view showing the pattern forming area A of this modification; Fig. 10b is a diagram showing the intensity of light irradiated to the photoresist film 20 when light is irradiated to the photoresist film 20 through the photomask 1A of this modification; Fig. 10c is a view showing the shape of the photoresist film 20 after exposing and developing the photoresist film 20 through the photomask 1A of this modification.

As shown in Fig. 10a, in this modification, when the pattern formation area A is viewed in plan view, the center portion of the pattern formation area A is alternately arranged with a rectangular overlapping area 10 and a rectangular non-overlapping area 11, wherein the rectangular overlapping area 10 The semi-transparent film 3 and the light-shielding film 5 overlap; the rectangular non-overlapping area 11 is not overlapped with the light-shielding film 5 . Further, outside the region where the rectangular overlapping regions 10 and the rectangular non-overlapping regions 11 are alternately arranged, a region where only the translucent film 3 exists is formed. In addition, a plurality of rectangular translucent regions 16 in which the light shielding film 5 and the translucent film 3 are not present are formed at the outer edge of the region where only the translucent film 3 is present. The first region D1 in the present modification is located in the region where the overlapping region 10 and the non-overlapping region 11 are alternately arranged, and is set as a region including at least a part of the overlapping region 10 . The second region D2 in the present modification is a region formed on the outer edge of the pattern forming region A, and is set as a region including at least a part of the translucent region 16 .

With this structure, as shown in FIG. 10b, the intensity of light irradiated to the photoresist film 20 is the smallest at the center of the photoresist film 20, and gradually increases from the center to the outer edge. As a result, as shown in FIG. 10c, the shape of the photoresist film 20 after development can be formed into a shape that gradually slopes from the center to the outer edge.

[Variation 4]

Another modification of the pattern forming region A of the photomask 1A of the first embodiment will be described. Fig. 11a is a plan view showing the pattern forming area A of this modification; Fig. 11b is a diagram showing the intensity of light irradiated to the photoresist film 20 when light is irradiated to the photoresist film 20 through the photomask 1A of this modification; Fig. 11c is a view showing the shape of the photoresist film 20 after the photoresist film 20 is exposed and developed through the photomask 1A of the present modification.

As shown in Fig. 11a, in this modification, when the pattern forming area A is viewed in plan view, in the central area 17 of the pattern forming area A, an overlapping area 10 where the translucent film 3 and the light shielding film 5 overlap is formed. In addition, in this modification, the radial region 18 is formed, and the radial region 18 extends radially from the center region 17 to the outer edge portion of the pattern forming region A in the overlapping region 10 . The radial area 18 narrows in width toward the outer edge of the pattern forming area A. As shown in FIG. The first area D1 in this modification is set inside the center area 17 . The second region D2 in the present modification is a region located at the outer edge of the pattern forming region A, and is set as a region including at least a part of the non-overlapping region 11 . That is, the pattern forming region A of the present modification has: (1) a non-mixed region composed of an overlapping region in which the translucent film pattern and the light-shielding film pattern are laminated; and (2) a mixed region including a region formed in the non-mixed region The outer edge of the film is overlapped so that the pattern of the translucent film and the pattern of the light-shielding film overlap each other and the non-overlapping region where the light-shielding film 5 does not overlap on the translucent film 3 .

With this structure, as shown in FIG. 11b, the intensity of the light irradiated to the photoresist film 20 is the smallest at the center of the photoresist film 20, and gradually increases from the center to the outer edge. As a result, as shown in FIG. 11c, the shape of the photoresist film 20 after development can be formed into a shape that gradually slopes from the center to the outer edge.

[Variation 5]

Another modification of the pattern forming region A of the photomask 1A of the first embodiment will be described. Fig. 12a is a plan view showing the pattern forming area A of this modification; Fig. 12b is a diagram showing the intensity of light irradiated to the photoresist film 20 when light is irradiated to the photoresist film 20 through the photomask 1A of this modification; Fig. 12c is a view showing the shape of the photoresist film 20 after the photoresist film 20 is exposed and developed through the photomask 1A of the present modification.

As shown in FIG. 12a , in this modification, when the pattern forming area A is viewed in plan view, in the central area 17 of the pattern forming area A, an overlapping area 10 where the translucent film 3 and the light shielding film 5 overlap is formed. In addition, in this modification, the helical region 71 extending in a spiral shape toward the outer edge portion of the pattern forming region A from the central region 70 of the overlapping region 10 is formed. A non-overlapping region 11 is formed between the plurality of helical regions 71 . In this specification, "extending helically toward the outer edge portion" means "extending in a curved manner toward the outer edge portion". The width of the spiral region 71 may be narrowed toward the outer edge of the pattern forming region A. As shown in FIG. The first area D1 in this modification is set inside the center area 70 . The second region D2 in the present modification is a region located at the outer edge of the pattern forming region A, and is set as a region including at least a part of the non-overlapping region 11 .

With this structure, as shown in FIG. 12b, the intensity of light irradiated to the photoresist film 20 is the smallest at the center of the photoresist film 20, and gradually increases from the center to the outer edge. As a result, as shown in FIG. 12c, the shape of the photoresist film 20 after development can be formed into a shape that gradually slopes from the center to the outer edge.

[Variation 6]

Another modification of the pattern forming region A of the photomask 1A of the first embodiment will be described. Fig. 13a is a plan view showing the pattern forming area A of this modification; Fig. 13b is a diagram showing the intensity of light irradiated to the photoresist film 20 when light is irradiated to the photoresist film 20 through the photomask 1A of this modification; Fig. 13c is a view showing the shape of the photoresist film 20 after the photoresist film 20 is exposed to light and developed through the photomask 1A of this modification.

As shown in FIG. 13a, in this modification, when the pattern formation area A is viewed in plan view, in the central area 80 of the pattern formation area A, an overlapping area 10 where the translucent film 3 and the light shielding film 5 overlap is formed. A region 81 is formed outside the central region 80 , and the region 81 includes an overlapping region 10 where the translucent film 3 and the light-shielding film 5 overlap, and a plurality of translucent regions 16 where the light-shielding film 5 and the translucent 3 film 5 do not exist. . The area 81 is formed so that the area of the translucent area 16 increases toward the outside of the pattern forming area A. As shown in FIG. Further, the first translucent portion 82 is formed in a ring shape at the periphery of the region 81 . Further, the second translucent portion 83 is formed in a ring shape on the periphery of the first translucent portion 82 . The first translucent portion 82 is designed to have a lower light transmittance than the second translucent portion 83 . The first area D1 in this modification is set inside the center area 80 . The second region D2 in this modification is set in the non-overlapping region 11 formed in the outer edge portion of the pattern forming region A. As shown in FIG.

With this structure, as shown in FIG. 13b, the intensity of the light irradiated to the photoresist film 20 is the smallest at the center of the photoresist film 20, and gradually increases from the center to the outer edge. As a result, as shown in FIG. 13c, the shape of the photoresist film 20 after development can be formed into a shape that gradually slopes from the center to the outer edge.

[Variation 7]

Another modification of the pattern forming region A of the photomask 1A of the first embodiment will be described. Fig. 14a is a plan view showing the pattern design of the pattern forming region A formed in the photomask 1A of the present modification; Fig. 14b is a cross-sectional view showing the photomask 1A of the present modification cut in a plane perpendicular to the transparent substrate 2 . FIG. 15a is a diagram showing the intensity of light irradiated to the photoresist film 20 when light is irradiated to the photoresist film 20 through the photomask 1A of this modification; A shape diagram of the photoresist film 20 after the film 20 is exposed and developed.

As shown in Fig. 14a, in this modification, when the pattern forming area A is viewed in plan view, in the central area 90 of the pattern forming area A, an overlapping area 10 where the translucent film 3 and the light shielding film 5 overlap is formed. On the outer side of the central region 90 , a first translucent portion 91 , a second translucent portion 92 , a third translucent portion 93 , and a fourth translucent portion 94 are formed in this order from the inner side in a ring shape. The first translucent portion 91 , the second translucent portion 92 , the third translucent portion 93 and the fourth translucent portion 94 are composed of the translucent film 3 . As shown in FIG. 14b, among the first translucent portion 91, the second translucent portion 92, the third translucent portion 93 and the fourth translucent portion 94, the thin film of the first translucent portion 91 is the largest, and the film thickness is The order of the second translucent portion 92 , the third translucent portion 93 , and the fourth translucent portion 94 is reduced. As a result, the light transmittance of the first translucent portion 91 is the smallest, and the light transmittance increases in the order of the second translucent portion 92 , the third translucent portion 93 , and the fourth translucent portion 94 .

With this structure, as shown in FIG. 15a, the intensity of light irradiated to the photoresist film 20 is the smallest at the center of the photoresist film 20, and gradually increases from the center to the outer edge. As a result, as shown in FIG. 15b, the shape of the photoresist film 20 after development can be formed into a shape that gradually slopes from the center to the outer edge.

As described above, the mask 1A of this modification has the overlapping region 10 in which the pattern of the translucent film 3 and the pattern of the light shielding film 5 overlap in the center portion of the pattern forming region A. As shown in FIG. In addition, in the mask 1A of the present modification, a plurality of translucent portions having different light transmittances (that is, the first translucent portion 91 , the first translucent portion 91 , the first translucent portion 91 , the first The second translucent portion 92 , the third translucent portion 93 and the fourth translucent portion 94 ), the light transmittances of the plurality of translucent portions increase toward the outer edge portion of the pattern forming area A.

In addition, in the above-mentioned mask 1A, the overlapping region 10 formed in the central region 90 of the pattern forming region A has a circular shape, and the first translucent portion 91 , the second translucent portion 92 , the third translucent portion 93 and the Although the four translucent portions 94 have an annular structure, the structure is not limited to this. That is, the mask 1A of the present modification is formed as the overlapping area 10 in the central portion of the pattern forming area A, and only a plurality of semitransparent portions are formed so that the light transmittance gradually increases toward the peripheral portion of the pattern forming area A to surround the pattern forming area A. An overlapping area of 10 is sufficient. For example, the overlapping area 10 and the plurality of translucent portions may be oval, rectangular, or the like.

Further, in the above-described photomask 1A, the first translucent portion 91 , the second translucent portion 92 , the third translucent portion 93 , and the fourth translucent portion 94 are made of the translucent film 3 having the same light transmittance. However, the mask 1A of this modification is not limited to this structure. The first translucent part 91 , the second translucent part 92 , the third translucent part 93 and the fourth translucent part 94 may be composed of translucent films having different light transmittances so that the light transmittances can be formed toward the pattern The peripheral portion of the area A increases.

Next, the manufacturing method of the photomask 1A of this modification is demonstrated. FIGS. 16 to 18 are diagrams for explaining a method of manufacturing the photomask 1A. As shown in FIG. 16 , in the manufacture of the photomask 1A, first, the photomask substrate 50 having the light shielding film 5 formed on the surface of the transparent substrate 2 is prepared (hereinafter, referred to as the first step R1 ). Next, the light shielding film 5 on the mask substrate 50 is patterned. (hereinafter, referred to as the second step R2). In the second step R2, patterning is performed so that the light shielding film 5 is formed in the shape of the overlapping region 10 (ie, circular).

Next, the semitransparent film 3 is formed on the entire surface of the transparent substrate 2 including the light shielding film 5 (hereinafter, referred to as the third step R3). After that, the semitransparent film 3 formed in the third step R3 is patterned (hereinafter, referred to as the fourth step R4). In the fourth step R4 , patterning is performed so that the outer edge shape of the translucent film 3 becomes the outer edge shape of the first translucent portion 91 when the transparent substrate 2 is observed in plan view. Specifically, in the fourth step R4, a photoresist film is formed on the surface of the translucent film 3, and the photoresist film is drawn by a drawing device. After that, the photoresist film is developed and exposed to form a photoresist pattern, the translucent film 3 is etched using the photoresist pattern as a mask, and a part of the translucent film is removed to form a pattern of the translucent film 3 . Then, the remaining photoresist film is removed.

Next, as shown in FIG. 17 , the semitransparent film 3 is further formed on the entire surface of the transparent substrate 2 (hereinafter, referred to as the fifth step R5 ). In addition, in FIG. 17 , the hatching of the translucent film 3 formed in the fifth step is different from that of the translucent film 3 formed in the third step R3 for easy understanding. In this regard, different shades are equally applicable to the following steps. After that, the translucent film 3 formed in the fifth step R5 is patterned (hereinafter, referred to as the sixth step R6). In the sixth step R6 , when the transparent substrate 2 is patterned in plan view, the outer edge shape of the translucent film 3 becomes the outer edge shape of the second translucent portion 92 . The specific method of the sixth step R6 is the same as that of the fourth step R4.

Next, the semitransparent film 3 is further formed on the entire surface of the transparent substrate 2 (hereinafter, referred to as the seventh step R7). Further, the semitransparent film 3 formed in the seventh step is patterned. In the eighth step R8, patterning is performed so that the outer edge shape of the translucent film 3 becomes the outer edge shape of the third translucent portion 93 when the transparent substrate 2 is observed in plan view. The specific method of the eighth step R8 is the same as that of the fourth step R4.

Next, as shown in FIG. 18, a semitransparent film 3 is further formed on the entire surface of the transparent substrate 2 (hereinafter, referred to as a ninth step R9). After that, the translucent film 3 formed in the ninth step R9 is patterned (hereinafter, referred to as the tenth step R10 ). In the tenth step R10 , when the transparent substrate 2 is patterned in plan view, the outer edge shape of the translucent film 3 is formed into the outer edge shape of the fourth translucent portion 94 . Through the above steps, the mask 1A shown in FIG. 14b, that is, the film thickness of the first translucent portion 91 is the largest, and can be adjusted according to the second translucent portion 92, the third translucent portion 93 and the fourth translucent portion 91. The sequence of the translucent portion 94 produces the photomask 1A having a smaller film thickness.

Next, the film thickness of the translucent film 3 formed in the third step R3, the fifth step R5, the seventh step R7, and the ninth step R9 will be described. When setting the film thickness, first, the film thickness of the semitransparent film 3 formed in the ninth step R9 is set so that the light transmittance of the fourth semitransparent portion 94 becomes a desired light transmittance. Here, the light transmittance of the region where a plurality of semitransparent films are stacked is represented by the following formula (1). T=T ₀ ×exp(-4πkz/λ) ・・・(1)

In the above formula (1), T is the light transmittance, T ₀ is a value uniquely determined by the optical properties of the substrate glass (that is, the transparent substrate 2 ) and the translucent film, λ is the wavelength of the exposure light, and k is the translucent film. The extinction coefficient of , z is the thickness of the translucent film. As shown in the above formula (1), when T ₀ , λ, and k are constants, the light transmittance of a region where a plurality of semitransparent films are stacked is determined by the film thickness of the semitransparent films. In the ninth step R9 , the film thickness of the translucent film to be formed is set so that the light transmittance calculated according to the above formula (1) becomes the light transmittance of the fourth translucent portion 94 . In addition, since the fourth translucent portion 94 is constituted by one layer of the translucent film 3, λ in the above formula (1) becomes the film thickness of the translucent film 3 formed in the ninth step R9. The light transmittance of the fourth translucent portion 94 formed in the ninth step R9 is used as a reference for the light transmittance of the photomask 1A in this modification.

Next, the film thickness of the translucent film 3 formed in the seventh step R7 is set to a thickness determined by the sum of the film thicknesses of the translucent films 3 formed in the seventh step R7 and the ninth step R9. The light transmittance of the three semitransparent portions 93 becomes a desired light transmittance. That is, in order to make the third translucent portion 93 a desired light transmittance, the thickness of the translucent film 3 formed in the ninth step R9 is considered, and the thickness of the semitransparent film 3 formed in the seventh step R7 is set in advance. The film thickness of the translucent film 3 . More specifically, using the above-mentioned formula (1), the film thickness of the translucent film 3 formed in the ninth step R9 and the thickness of the translucent film 3 so that the third translucent portion 93 has a desired light transmittance are determined. The film thickness, based on these film thicknesses, calculates the film thickness of the translucent film 3 formed in the seventh step R7, and forms the translucent film 3 in the seventh step R7.

Next, the film thickness of the translucent film 3 formed in the fifth step R5 is set to be the sum of the film thicknesses of the translucent film 3 formed in the fifth step R5, the seventh step R7, and the ninth step R9. The light transmittance of the second translucent portion 92 determined by the thickness becomes a desired light transmittance. More specifically, using the above-mentioned formula (1), the film thickness of the semitransparent film 3 formed in the seventh step R7 and the ninth step R9 and the value for making the second semitransparent portion 92 to have a desired light transmittance are determined. The film thickness of the translucent film 3 is calculated based on these film thicknesses, and the film thickness of the translucent film 3 formed in the fifth step R5 is calculated, and the translucent film 3 is formed in the fifth step R5.

Finally, the film thickness of the translucent film 3 formed in the third step R3 is set to be the translucent film formed in the third step R3, the fifth step R5, the seventh step R7, and the ninth step R9. The light transmittance of the first translucent portion 91 determined by the total film thickness of 3 becomes a desired light transmittance. More specifically, using the above formula (1), the film thickness of the translucent film 3 formed in the fifth step R5, the seventh step R7, and the ninth step R9 is determined and the first translucent portion 91 is desired. The film thickness of the translucent film 3 with the light transmittance of the 3.

[Second Embodiment]

Hereinafter, other embodiments of the present invention will be described. In addition, for convenience of description, the same reference numerals are attached to the members having the same functions as the members described in the above-mentioned embodiments, and the description thereof will not be repeated.

Fig. 19a is a plan view showing the pattern design formed in the pattern forming region of the photomask 1B of the present embodiment, and Fig. 19b is a structural view showing the photomask 1B, cut on a plane perpendicular to the transparent substrate 2 A cross-sectional view of the mask 1B. The mask 1A in the first embodiment is a bottom type mask, and the mask 1B in this embodiment is a top type mask.

As shown in FIG. 19b , the structure of the mask 1B includes a region where the transparent substrate 2 , the light shielding film 5 and the translucent film 3 are sequentially stacked, and a region where the translucent film 3 is stacked on the transparent substrate 2 . In addition, the light shielding film 5 and the semitransparent film 3 are not arranged in all regions of the transparent substrate 2, but are appropriately arranged in the pattern forming region A. As shown in FIG. In addition, the mask 1B in this Example is not limited to the mask which has the pattern formation area A shown in FIG. 19a, and may have the pattern formation area A described in the modification examples 1 to 7 mentioned above.

Like the mask 1A, in the pattern forming area A in the mask 1B, the circular light-shielding film 5 is located on the surface of the transparent substrate 2 , with the same position as the center of the light-shielding film 5 as the center and a diameter larger than that of the light-shielding film 5 . A circular-shaped translucent film 3 having a diameter of 100 Å is formed on the upper surface of the light shielding film 5 and the upper surface of the transparent substrate 2 .

As a result, as shown in FIG. 19a , in the pattern forming area A of the mask 1B, the overlapping area 10 where the light shielding film 5 and the translucent film 3 overlap is formed in a circular shape at the center including the center of the pattern forming area A. Further, in the pattern forming region A, a non-overlapping region 11 in which only the translucent film 3 is formed so as to surround the overlapping region 10 is formed. In other words, the non-overlapping region 11 is formed at the outer edge portion of the pattern forming region A. As shown in FIG.

According to this configuration, similarly to the mask 1A of the first embodiment, the light transmittance is low in the center portion of the pattern forming area A, and the light transmittance increases toward the pattern forming area A at the outer edge portion of the pattern forming area A. increase outside. In other words, when an area of a predetermined area including the central portion of the pattern formation area A is defined as the first area D1, and an area of the predetermined area at the outer edge portion of the pattern formation area A is defined as the second area D2, the The light transmittance in the second region D2 is higher than the light transmittance in the first region D1.

Next, the manufacturing method of the photomask 1B is demonstrated. FIGS. 20 to 22 are diagrams for explaining the manufacturing method of the photomask 1B. As shown in FIG. 20 , in the manufacture of the photomask 1B, first, a photomask substrate 50 having the light shielding film 5 formed on the surface of the transparent substrate 2 is prepared (hereinafter, referred to as a first step Q1 ). Next, the first photoresist film 60 is formed on the surface of the mask substrate 50 (hereinafter, referred to as the second step Q2). After that, the first photoresist film 60 is drawn by a drawing device to form a first photoresist pattern (hereinafter, referred to as the third step Q3). In the third step Q3, when the photomask substrate 50 is observed in a plan view, drawing is performed so that the developed first photoresist film 60 is formed in the shape of the overlapping region 10 (ie, circular).

Next, the first photoresist film 60 is developed to remove the drawn region 60A in the first photoresist film 60 to form a first photoresist pattern (hereinafter referred to as the fourth step Q4). The third step Q3 and the fourth step Q4 are steps of forming a first photoresist pattern.

Next, as shown in FIG. 21, using the patterned first photoresist film 60 (ie, the first photoresist pattern) as a mask and etching the light shielding film 5, a part of the light shielding film 5 is removed and a light shielding film is formed 5 (hereinafter, referred to as the fifth step Q5). Next, the remaining first photoresist film 60 is removed (hereinafter, referred to as the sixth step Q6).

Next, the semitransparent film 3 is formed on the entire surface of the mask including the light shielding film 5 (hereinafter, referred to as the seventh step Q7). After that, the second photoresist film 61 is formed on the surface of the translucent film 3 (hereinafter, referred to as the eighth step Q8). After that, as shown in FIG. 22, the second photoresist film 61 is drawn by a drawing device (hereinafter, referred to as the ninth step Q9). In the ninth step Q9, when the mask is observed in a plan view, drawing is performed so as to form a ring shape with respect to the outer edge portion of the second photoresist film 61 .

Next, the second photoresist film 61 is developed to remove the drawn region 61A in the second photoresist film 61 to form a second photoresist pattern (hereinafter, referred to as the tenth step Q10). The ninth step Q9 and the tenth step Q10 are steps of forming a second photoresist pattern.

Next, the patterned second photoresist film 61 (ie, the second photoresist pattern) is used as a mask to remove a part of the translucent film 3 (hereinafter, referred to as the eleventh step Q11). Finally, the remaining second photoresist film 61 is removed (hereinafter, referred to as the twelfth step Q12).

Through the above steps, the overlapping area 10 is formed in a circular shape at the center including the center of the pattern forming area A, and at the same time, a photomask 1B having a pattern forming area formed so as to surround the overlapping area 10 can be manufactured. Non-overlapping area 11.

[Variation 8]

Described as a photomask of any of the above-described embodiments or modifications, although the difference in light transmittance between the light shielding film 5 and the semitransparent film 3 and the light transmittance caused by the area ratio between the light shielding film 5 and the semitransparent film 3 are used However, the photomask of the present invention is not limited thereto, and a phase shift film may be used instead of or in combination with the translucent film 3 . The application of the phase shift film can be realized by adjusting the retardation of the phase shift film with respect to the transparent substrate 2 and the light transmittance of the phase shift film, and setting the area where the phase effect is applied.

For example, in the photomask 1A shown in FIG. 2a, the film thickness of the phase shift film is adjusted so that the phase difference with respect to the transparent substrate 2 is 100 degrees or less. The phase shift film is arranged between the overlapping region 10 having low light transmittance and the non-overlapping region 11 having high light transmittance. The exposure light of the exposure device transmitted near the boundary between the overlapping area 10 and the non-overlapping area 11 can be adjusted to be shifted to the non-overlapping area 11 side by the phase effect.

In addition, in the photomask 1A shown in FIG. 14a, a plurality of translucent parts (ie, the first translucent part 91 , the second translucent part 91 , the second translucent part 91 , the second translucent part 91 , the second translucent part 91 , the second translucent part A phase shift film is formed between at least one or more adjacent translucent parts among the part 92, the third translucent part 93 and the fourth translucent part 94), and/or near the boundary of the adjacent translucent parts.

In addition, in the mask 1A in which the pattern is formed by the overlapping region 10 and the non-overlapping region 11 shown in Figs. 8a, 9a, 10a, 11a, 12a, etc., the phase shift film may be formed in the overlapping region 10 and the non-overlapping region near the border between 11.

As described above, by forming the phase shift film, the light transmittance can be adjusted more finely. As a result, the photoresist shape on the to-be-transferred substrate side formed through the photomask of the present invention can be formed into a more slowly inclined shape.

In addition, even when the phase shift film is applied, the above-described manufacturing method can be applied by using the same metal species for the phase shift film and the light shielding film 5 and/or the semi-transparent film 3, so the phase shift film can be used without any special The problem.

In addition, for example, in the mask 1A of the first embodiment, the overlapping region 10 constitutes the light-shielding film 5 and the translucent film 3 to overlap, but a phase shift film may be applied instead of the light-shielding film 5 . That is, the light transmittance of the region where the phase shift film is formed is lower than that of the non-overlapping region 11, in other words, it can be set in a region where the intensity of the transmitted exposure light is low. , can meet the optical density OD value of 2.7 or more, you can adapt.

[Third Embodiment]

In the above-mentioned embodiments, the mask in which the pattern forming area A is a circular shape has been described, but the mask of the present invention is not limited to this, and the pattern forming area A may be formed according to the shape of each pixel of the above-mentioned display device. formed into the desired shape. This will be explained with reference to FIG. 23 .

FIG. 23 is a plan view showing the pattern forming area A of the mask 1C of the present embodiment. As shown in FIG. 23, the pattern formation area A of the mask 1C is a regular pentagon. In the pattern forming area A of the mask 1C, the overlapping area 10 where the light shielding film 5 and the translucent film 3 overlap each other is formed in a regular pentagon at the center portion including the center of the pattern forming area A. As shown in FIG. Further, in the pattern forming region A, a non-overlapping region 11 in which only the translucent film 3 is formed so as to surround the overlapping region 10 is formed. The first area D1 in this modification is set in the overlapping area 10 . The second region D2 in this modification is set in the non-overlapping region 11 formed in the outer edge portion of the pattern forming region A. As shown in FIG.

According to this configuration, when exposure is performed through the mask 1C, the intensity of light irradiated to the outer edge portion of the photoresist film 20 becomes higher than the intensity of light irradiated to the central portion of the photoresist film 20 . As a result, as shown in Fig. 3b, the photoresist film 20 after development can be formed into a shape in which the outer edge portion is gradually inclined. In other words, the photoresist film 20 may be gradually inclined from the center to the outside.

In addition, in the present embodiment, the structure in which the pattern forming region A is a regular pentagon has been described, but the mask of the present invention is not limited to this. In one aspect of the photomask of the present invention, the pattern forming area A may be a pentagon other than a regular pentagon, or a polygon other than a pentagon (eg, triangle, rectangle, hexagon, etc.). In addition, in the mask of one aspect of the present invention, the pattern forming area A has a pair of opposite straight lines and two curved lines connecting both ends of the pair of opposite straight lines, and may have a pair of opposite straight lines and a pair of curved lines. The shape formed by the above two curves. In addition, in one aspect of the photomask of the present invention, the pattern forming area A has a polygonal shape, and at least one corner of the polygonal shape may be formed by a curved line such as a circular arc.

[Variation 9]

In one aspect of the photomask of the present invention, the pattern forming area A may be elliptical. This will be explained with reference to FIG. 24 .

FIG. 24 is a plan view showing the pattern forming area A of the mask 1D of the present embodiment. As shown in FIG. 24, the pattern formation area A of the mask 1D has an elliptical shape. In the pattern forming area A of the mask 1D, the overlapping area 10 where the light shielding film 5 and the translucent film 3 overlap each other is formed in an elliptical shape in the center portion including the center of the pattern forming area A. As shown in FIG. Further, in the pattern forming region A, a non-overlapping region 11 in which only the translucent film 3 is formed so as to surround the overlapping region 10 is formed. The first region D1 in this modification is set in the overlapping region 10 . The second region D2 in this modification is set in the non-overlapping region 11 formed in the outer edge portion of the pattern forming region A. As shown in FIG.

According to this configuration, in the photomask 1D, the intensity of the light irradiated to the outer edge portion of the photoresist film 20 is higher than the intensity of the light irradiated to the central portion of the photoresist film 20 . As a result, the photoresist film 20 after development can be formed into a shape in which the outer edge portion is gradually inclined, as in the cross section shown in Fig. 3b. In other words, the photoresist film 20 may be gradually inclined from the center to the outside.

[Fourth Embodiment]

In the above description, the structure in which the positive photoresist film is exposed through the mask of the present invention to form a convex photoresist shape on the substrate to be transferred has been described, but the present invention The photomask can also be used for negative photoresist films. In this case, the formed photoresist shape is concave with respect to the substrate to be transferred. The concave shape has a shape in which the outer edge portion is gradually inclined. Hereinafter, this configuration will be described in detail.

FIG. 25 is a view showing the shape of the photoresist film 84 after exposure and development of the negative photoresist film 84 on the substrate to be transferred through the mask 1A described in the first embodiment. As described in the first embodiment, in the mask 1A, the light transmittance of the central portion of the pattern forming region A decreases, and the light transmittance increases from the central portion to the outside. By exposing and developing the negative photoresist film 84 using the mask 1A having the above-described structure, as shown in FIG. Further, since the intensity of the irradiated light increases from the central portion to the peripheral portion, the solubility of the photoresist film 84 in the developing solution decreases, and the thickness of the remaining photoresist film 84 increases. In other words, by using the photomask 1A for the negative photoresist film 84, the shape of the photoresist film 84 after development is formed into a concave shape with respect to the substrate to be transferred, and the area between the light-shielding area and the light-transmitting area can be formed as Has a slowly sloping shape.

[Fifth Embodiment]

In each of the above-described embodiments, the photomask in which the pattern forming region A is formed so that the intensity of light irradiated to the photoresist film 20 increases from the center toward the outside has been described, but the photomask of the present invention is not limited thereto. In the photomask of one aspect of the present invention, the pattern forming region A may be formed so that the intensity of the light irradiated to the photoresist film 20 decreases from the center to the outside. This will be explained using Figures 26a to 26b.

FIG. 26a is a schematic diagram showing the pattern design formed in the pattern forming area A of the photomask 1E of the present embodiment, and FIG. 26b is a cross-sectional view showing the photomask 1E cut on a plane perpendicular to the transparent substrate 2 .

As shown in Fig. 26a, the pattern forming region A of the photomask 1E has a circular shape. In the pattern forming area A of the photomask 1E, the light transmitting portion 85 that transmits light is formed in a circular shape at the center portion including the center of the pattern forming area A. As shown in FIG. Further, as shown in Figs. 26a and 26b, in the pattern forming region A, a non-overlapping region 11 in which only the translucent film 3 is formed so as to surround the light-transmitting portion 85 is formed. As a result, when an area of a predetermined area including the central portion of the pattern formation area A is defined as the first area D1, and an area of the predetermined area at the outer edge of the pattern formation area A is defined as the second area D2, the second area The light transmittance in D2 is lower than that in the first region D1. An overlapping region 10 where the light shielding film 5 , the etching stopper film 4 and the semitransparent film 3 overlap is formed in a region outside the pattern forming region A, and is a light shielding region.

In the photomask 1E having the above-described configuration, since the light-transmitting portion 85 exists in the central portion of the pattern forming region A, the intensity of the light irradiated to the central portion of the photoresist film 20 increases. In addition, since the non-overlapping region 11 is formed to surround the light-transmitting portion 85, the intensity of light irradiated to the photoresist film 20 may decrease from the center to the outside.

FIG. 27 is a view showing the shape of the photoresist film 20 after exposure and development of the positive photoresist film 20 on the substrate to be transferred through the mask 1E. As shown in FIG. 27, the positive photoresist film 20 on the substrate to be transferred is exposed and developed through the mask 1E, and the developed photoresist film is removed by development at the central portion where the intensity of the irradiated light is high. 20. Furthermore, since the intensity of the irradiated light decreases from the central portion to the peripheral portion, the thickness of the remaining photoresist film 20 may increase. In other words, by using the photomask 1E on the positive photoresist film 20, the shape of the developed photoresist film 20 is concave relative to the substrate to be transferred, and the area between the light-shielding area and the light-transmitting area can be formed. Has a slowly sloping shape.

FIG. 28 is a view showing the shape of the photoresist film 20 after exposure and development of the negative photoresist film 84 on the substrate to be transferred through the mask 1E. As shown in FIG. 28 , by exposing and developing the negative photoresist film 84 on the substrate to be transferred by the transmissive mask 1E, the photoresist film 84 after development can be formed into a shape whose outer edge portion is gradually inclined. In other words, the photoresist film 84 may be gradually inclined from the center to the outside.

Next, the manufacturing method of the photomask 1E is demonstrated. FIGS. 29 to 31 are diagrams for explaining the method of manufacturing the photomask 1E. As shown in FIG. 29, in the manufacture of the photomask 1A, first, on the surface of the transparent substrate 2, a photomask substrate 30 ( Hereinafter, it is referred to as the first step S1).

Next, the first photoresist film 40 is formed on the surface of the mask substrate 30 (hereinafter, referred to as the second step S2). After that, the first photoresist film 40 is drawn by a drawing device (hereinafter, referred to as the third step S3). In the third step P3, when the photomask substrate 30 is observed in a plan view, drawing is performed so that the first photoresist film 40 in the region corresponding to the pattern formation region A is removed by development.

Next, the first photoresist film 40 is developed to remove the drawn region 40A in the first photoresist film 40 to form a first photoresist pattern (hereinafter referred to as the fourth step S4 ). The third step S3 and the fourth step S4 are steps of forming a first photoresist pattern.

Next, as shown in FIG. 30 , the light-shielding film 5 is etched using the patterned first photoresist film 40 (that is, the first photoresist pattern) as a mask to form a pattern of the light-shielding film 5 (hereinafter, referred to as is the fifth step S5). In the fifth step S5 , only the light-shielding film 5 is etched and removed using a solvent that does not dissolve the etching stopper film 4 as a solvent for etching the light-shielding film 5 .

Next, using the first photoresist pattern and the light shielding film 5 as a mask, the etching stopper film 4 is removed (hereinafter, referred to as the sixth step S6). After that, the remaining first photoresist film 40 is removed (hereinafter, referred to as the seventh step S7).

Next, the second photoresist film 41 is formed on the entire surface of the photomask including the light shielding film 5 (hereinafter, referred to as the eighth step S8).

Next, as shown in FIG. 31, the second photoresist film 41 is drawn by a drawing device (hereinafter, referred to as the ninth step S9). In the ninth step S9, when the photomask is observed in plan view, drawing is performed so that only the second photoresist film 41 in the regions corresponding to the overlapping region 10 and the non-overlapping region 11 remains after development. In this case, it is also important to reflect in advance the design pattern with a margin that takes into account the pattern shift due to misalignment of the drawing device, so as to minimize the influence of the pattern shift.

Next, the second photoresist film 41 is developed to remove the drawn region 41A in the second photoresist film 41 to form a second photoresist pattern (hereinafter, referred to as the tenth step S10 ). The eighth step S8, the ninth step S9 and the tenth step S10 are steps of forming a second photoresist pattern.

Next, using the patterned second photoresist film 41 (ie, the second photoresist pattern) as a mask, the semitransparent film 3 is etched to form a pattern of the semitransparent film 3 (hereinafter, referred to as the eleventh step S11). Finally, the remaining second photoresist film 41 is removed (hereinafter, referred to as the twelfth step S12).

Through the above steps, the light-transmitting portion 85 is formed into a circular shape at the central portion including the center of the pattern-forming region A, and at the same time, the mask 1E having the pattern-forming region A can be manufactured, and the pattern-forming region A is formed around the transparent portion. The non-overlapping region 11 is formed in the manner of the light portion 85 .

[Sixth Embodiment]

The bottom-type mask 1E has been described in the fifth embodiment, and the bottom-type mask 1E has a light-transmitting area at the center of the pattern forming area A, and forms a non-overlapping area so as to surround the light-transmitting area, but The photomask of the present invention is not limited to this. The photomask of one aspect of the present invention can also be a top-type photomask, which has a light-transmitting area in the center of the pattern forming area A, and forms a non-overlapping area around the light-transmitting area. This will be explained in detail below.

Fig. 32a is a schematic diagram showing the pattern design formed in the pattern forming area A of the photomask 1F of this embodiment, and Fig. 32b is a cross-sectional view showing the photomask 1F cut on a plane perpendicular to the transparent substrate.

As shown in FIG. 32a , in the pattern forming area A of the mask 1F, the light transmitting portion 85 that transmits light is formed in a circular shape at the center portion including the center of the pattern forming area A. As shown in FIG. Further, as shown in Figs. 32a and 32(b), in the pattern forming region A, a non-overlapping region 11 in which only the translucent film 3 is formed so as to surround the light-transmitting portion 85 is formed. Further, on the outside of the pattern forming region A, an overlapping region 10 in which the light-shielding film 5 and the translucent film 3 are overlapped is formed so as to surround the non-overlapping region 11 .

According to this configuration, similarly to the mask 1E of the fifth embodiment, the light transmittance becomes high in the center portion of the pattern forming area A, and the light transmittance increases toward the pattern forming area A at the outer edge portion of the pattern forming area A. The outer side becomes lower. In other words, when an area of a predetermined area including the central portion of the pattern formation area A is defined as the first area D1, and an area of the predetermined area at the outer edge portion of the pattern formation area A is defined as the second area D2, the The light transmittance in the second region D2 is lower than the light transmittance in the first region D1.

Next, the manufacturing method of the photomask 1F is demonstrated. FIGS. 33 to 35 are diagrams for explaining a method of manufacturing the photomask 1F. As shown in FIG. 33 , in the production of the photomask 1F, first, a photomask substrate 50 having the light shielding film 5 formed on the surface of the transparent substrate 2 is prepared (hereinafter, referred to as a first step T1 ). Next, the first photoresist film 60 is formed on the surface of the mask substrate 50 (hereinafter, referred to as the second step T2). After that, the first photoresist film 60 is drawn by a drawing device to form a first photoresist pattern (hereinafter, referred to as the third step T3). In the third step T3, when the mask substrate 50 is observed in a plan view, drawing is performed so that the first photoresist film 60 in the region corresponding to the pattern forming region A is removed by development.

Next, the first photoresist film 60 is developed to remove the drawn region 60A in the first photoresist film 60 to form a first photoresist pattern (hereinafter referred to as the fourth step T4). The third step T3 and the fourth step T4 are steps of forming a first photoresist pattern.

Next, as shown in FIG. 34 , the light-shielding film 5 is etched using the patterned first photoresist film 60 (ie, the first photoresist pattern) as a mask to remove part of the light-shielding film 5 to form the light-shielding film 5 pattern (hereinafter, referred to as the fifth step T5). Next, the remaining first photoresist film 60 is removed (hereinafter, referred to as the sixth step T6).

Next, the semitransparent film 3 is formed on the entire surface of the mask including the light shielding film 5 (hereinafter, referred to as a seventh step T7). After that, the second photoresist film 61 is formed on the surface of the translucent film 3 (hereinafter, referred to as the eighth step T8). After that, as shown in FIG. 35, the second photoresist film 61 is drawn by a drawing device (hereinafter, referred to as a ninth step T9). In this case, it is also important to reflect in advance the design pattern with a margin that takes into account the pattern shift due to misalignment of the drawing device, so as to minimize the influence of the pattern shift. In the ninth step T9, when the photomask is viewed in plan view, drawing is performed so that only the second photoresist film 61 in the region corresponding to the overlapping region 10 and the non-overlapping region 11 remains.

Next, the second photoresist film 61 is developed to remove the drawn region 61A in the second photoresist film 61 to form a second photoresist pattern (hereinafter, referred to as the tenth step T10). The ninth step T9 and the tenth step T10 are steps of forming a second photoresist pattern.

Next, the patterned second photoresist film 61 (ie, the second photoresist pattern) is used as a mask to remove part of the translucent film 3 (hereinafter, referred to as the eleventh step T11). Finally, the remaining second photoresist film 61 is removed (hereinafter, referred to as the twelfth step T12).

Through the above steps, the light-transmitting portion 85 is formed into a circular shape at the central portion including the center of the pattern forming area A, and at the same time, a mask 1F having the pattern forming area A can be manufactured, and the pattern forming area A is overlapped around the pattern forming area A. A non-overlapping region 11 is formed in the manner of the region 10 .

[Variation 10]

A modification of the pattern forming region A of the mask 1F of the sixth embodiment will be described. FIG. 36 is a plan view showing the pattern formation area A of the present modification. As shown in FIG. 36 , in this modification, when the pattern forming region A is viewed in plan view, lattice pattern regions 12 are formed in which rectangular light-transmitting portions 85 and rectangular non-overlapping regions 11 are alternately arranged. The translucent film 3 and the light-shielding film 5 do not exist in the rectangular light-transmitting portion; Moreover, in this modification, the area|region where the light shielding film 5 does not overlap the translucent film 3 is formed in the periphery of the lattice pattern area 12. That is, the pattern forming region A of the present modification has the following regions: (1) a mixed region including the light-transmitting portion 85 and the non-overlapping region 11 , and the light-transmitting portion 85 is free from the translucent film 3 and the light-shielding film 5 The non-overlapping area 11 is that the light-shielding film 5 does not overlap the translucent film 3; The first region D1 in the present modification exists inside the lattice pattern region 12 and is set to include at least the light-transmitting portion 85 located in the center portion of the pattern forming region A. As shown in FIG. That is, the first region D1 may be a region including only the light-transmitting portion 85 located at the center of the pattern forming region A, or a region including the light-transmitting portion 85 and the non-overlapping region 11 around the light-transmitting portion 85 . The second region D2 in this modification is set in the outer region of the lattice pattern region 12 , that is, in the non-overlapping region 11 formed in the outer edge portion of the pattern forming region A. As shown in FIG.

With this structure, the light transmitting portion 85 exists in the central portion of the pattern forming region A, and as the area ratio of the light transmitting portion 85 increases, the intensity of light irradiated to the central portion of the photoresist film 20 increases. In addition, since the translucent film 3 exists only so as to surround the lattice pattern region 12 at the outer edge of the pattern forming region A, the intensity of light irradiated to the photoresist film 20 decreases from the center to the outside. As a result, the outer edge of the photoresist film 20 after development is gradually inclined. That is, by using the photomask of this modification, the photoresist film 20 can be gradually inclined from the center to the outer side.

[Variation 11]

Another modification of the pattern forming region A of the mask 1F of the sixth embodiment will be described. FIG. 37 is a plan view showing the pattern formation area A of the present modification. As shown in FIG. 37 , in this modification, when the pattern forming area A is viewed in plan view, a light-transmitting portion in which the translucent film 3 and the light shielding film 5 do not overlap is formed in the central area 14 of the pattern forming area A. 85. In addition, in this modification, the region 15 is formed outside the central region 14 , and the region 15 includes the translucent portion 85 where the translucent film 3 and the light-shielding film 5 do not exist, and the light-shielding film 5 does not overlap the translucent film 3 . A plurality of non-overlapping regions 11 . In the region 15, the non-overlapping region 11 is formed such that the area increases toward the outer edge portion. Further, on the periphery of the region 15, a region where the light shielding film 5 does not overlap the translucent film 3 is formed. The first area D1 in this modification is set inside the center area 14 . The second region D2 in this modification example is set in the outer region of the region 15 , that is, in the non-overlapping region 11 formed in the outer edge portion of the pattern forming region A. As shown in FIG.

With this configuration, since the light-transmitting portion 85 is formed in the central region, the intensity of the light irradiated to the central portion of the photoresist film 20 increases. Furthermore, as the area ratio of the non-overlapping region 11 increases from the central region 14 to the outside, the intensity of light irradiated to the photoresist film 20 will decrease. As a result, the outer edge of the photoresist film 20 after development is gradually inclined. In other words, the photoresist film 20 can be gradually inclined from the center to the outside.

[Variation 12]

Another modification of the pattern forming region A of the mask 1F of the sixth embodiment will be described. FIG. 38 is a plan view showing the pattern formation area A of the present modification. As shown in FIG. 38 , in this modification, when the pattern forming area A is viewed in plan view, the central portion of the pattern forming area A is a rectangular light-transmitting portion 85 and a rectangular non-overlapping area 11 alternately arranged, wherein the light-transmitting portion 85 is alternately arranged. The translucent film 3 and the light-shielding film 5 do not exist; the rectangular non-overlapping area 11 is that the light-shielding film 5 does not overlap the translucent film 3 . In addition, a region where only the translucent film 3 is present is formed outside the region where the rectangular translucent portions 85 and the rectangular non-overlapping regions 11 are alternately arranged. Further, at the outer edge of the region where only the translucent film 3 is present, a plurality of rectangular overlapping regions 86 in which the light-shielding film 5 and the translucent film 3 do not overlap are formed. The first region D1 in the present modification is located in a region where the light-transmitting portions 85 and the non-overlapping regions 11 are alternately arranged, and is set as a region including at least a part of the light-transmitting portion 85 . The second region D2 in the present modification is located in the region formed on the outer edge of the pattern forming region A, and is set as a region including at least a part of the overlapping region 86 .

With this configuration, since the rectangular translucent portions 85 and the rectangular non-overlapping regions 11 are alternately arranged in the central portion of the pattern forming region A, and the outer edge portion of the pattern forming region A is formed as a region where only the translucent film 3 is present, The intensity of the light irradiated to the photoresist film 20 is the largest at the center of the photoresist film 20 , and gradually decreases from the center to the outer edge. As a result, the shape of the photoresist film 20 after development can be formed into a shape that gradually slopes from the center to the outer edge.

[Variation 13]

Another modification of the pattern forming region A of the mask 1F of the sixth embodiment will be described. FIG. 39 is a plan view showing the pattern formation area A of the present modification. As shown in FIG. 39 , in this modification, when the pattern forming area A is viewed in plan view, in the central area 17 of the pattern forming area A, a light-transmitting portion in which the translucent film 3 and the light shielding film 5 are not present is formed. 85. In addition, in the present modification, a radial region 87 is formed, and the light transmitting portion 85 radially extends from the central region 17 to the outer edge portion of the pattern forming region A in the radial region 87 . The radial region 87 is narrowed in width toward the outer edge of the pattern forming region A. As shown in FIG. The first area D1 in this modification is set inside the center area 17 . The second region D2 in the present modification is a region located at the outer edge of the pattern forming region A, and is set as a region including at least a part of the non-overlapping region 11 . That is, the pattern forming region A of the present modification has: (1) a non-mixed region (transparent portion 85 ) in which the translucent film 3 and the light-shielding film 5 do not exist; and (2) a mixed region 78 including a mixed region 78 formed in the In the outer edge of the non-mixed region, there is no region where the translucent film 3 and the light-shielding film 5 and a non-overlapping region where the light-shielding film 5 does not overlap with the translucent film 3 exist.

With this configuration, since the light-transmitting portion 85 is formed in the central region 17 of the pattern forming region A, and the light-transmitting portion 85 extends radially from the central region 17 to the outer edge portion of the patterning region A, the irradiation The intensity of the light to the photoresist film 20 is maximum at the center of the photoresist film 20 and gradually decreases from the center to the outer edge. As a result, the shape of the photoresist film 20 after development can be formed into a shape that gradually slopes from the center to the outer edge.

[Variation 14]

Another modification of the pattern forming region A of the mask 1F of the sixth embodiment will be described. FIG. 40 is a plan view showing the pattern formation area A of the present modification. As shown in FIG. 40 , in this modification, when the pattern formation area A is viewed in plan view, in the central area 88 of the pattern formation area A, a light-transmitting portion in which the translucent film 3 and the light shielding film 5 are not present is formed. 85. In addition, in this modification, the spiral region 89 is formed, and the light transmission portion of the spiral region 89 extends from the central region 88 to the outer edge portion of the pattern forming region A in a spiral shape. A non-overlapping region 11 is formed between the plurality of spiral regions 89 . The spiral region 89 may be narrowed in width toward the outer edge portion of the pattern forming region A. As shown in FIG. The first area D1 in this modification is set inside the center area 88 . The second region D2 in the present modification is a region located at the outer edge of the pattern forming region A, and is set as a region including at least a part of the non-overlapping region 11 .

With this structure, since the light-transmitting portion 85 is formed in the central region 88 of the pattern forming region A, and the light-transmitting portion 85 extends from the central region 88 to the outer edge portion of the pattern forming region A in a swirling manner, the light is irradiated. The intensity of the light to the photoresist film 20 is maximum at the center of the photoresist film 20 and gradually decreases from the center to the outer edge. As a result, the shape of the photoresist film 20 after development can be formed into a shape that gradually slopes from the center to the outer edge.

[Variation 15]

Another modification of the pattern forming region A of the mask 1F of the sixth embodiment will be described. FIG. 41 is a plan view showing the pattern formation area A of the present modification. As shown in FIG. 41 , in this modification, when the pattern forming region A is viewed in plan view, a region 103 is formed outside the central region 102 , and the region 103 includes an overlapping region 10 where the translucent film 3 and the light shielding film 5 overlap. And a plurality of light-transmitting parts 85 without the light-shielding film 5 and the translucent film 3 are present. The area 103 is formed so that the area of the overlapping area 10 increases toward the outside of the pattern forming area A. As shown in FIG. In addition, the first translucent portion 100 is formed in a ring shape at the periphery of the region 103 . In addition, the second translucent portion 101 is formed in a ring shape on the periphery of the first translucent portion 100 . The first translucent portion 100 is designed to have a higher light transmittance than the second translucent portion 101 . The first area D1 in this modification is set inside the center area 102 . The second region D2 in this modification is set in the non-overlapping region 11 formed in the outer edge portion of the pattern forming region A. As shown in FIG.

With this configuration, since the light-transmitting portion 85 is formed in the central region 102 of the pattern forming region A, the region 103 having the overlapping region 10 and the transparent portion 85 is formed outside the central region 102 , and the first region 103 is formed on the periphery. Since the translucent portion 100 is used, the intensity of the light irradiated to the photoresist film 20 is the largest at the center of the photoresist film 20 and gradually decreases from the center to the outer edge. As a result, the shape of the photoresist film 20 after development can be formed into a shape that gradually slopes from the center to the outer edge.

[Variation 16]

Another modification of the pattern forming region A of the mask 1F of the sixth embodiment will be described. FIG. 42 is a plan view showing the design formed on the pattern forming region A of the present modification. As shown in FIG. 42 , in this modification, when the pattern formation area A is viewed in plan view, in the central area 110 of the pattern formation area A, there is formed light-transmitting light that does not overlap the translucent film 3 and the light shielding film 5 . Section 85. On the outer side of the central region 110 , a first translucent portion 111 , a second translucent portion 112 , a third translucent portion 113 , and a fourth translucent portion 114 are formed in this order from the inner side in a ring shape. The first translucent part 111 , the second translucent part 112 , the third translucent part 113 and the fourth translucent part 114 are composed of the translucent film 3 . Among the first translucent portion 111 , the second translucent portion 112 , the third translucent portion 113 and the fourth translucent portion 114 , the thin film of the first translucent portion 111 is the smallest, and the film thickness is determined according to the thickness of the second translucent portion 112 , the The order of the third translucent portion 113 and the fourth translucent portion 114 becomes larger. As a result, the light transmittance of the first translucent portion 111 is the largest, and the light transmittance decreases in the order of the second translucent portion 112 , the third translucent portion 113 , and the fourth translucent portion 14 .

With this configuration, since the film thickness of the translucent film increases from the center to the outer side in the pattern forming area A, the intensity of light irradiated to the photoresist film 20 is the largest at the center of the photoresist film 20, and as It gradually narrows from the center to the outer edge. As a result, the shape of the photoresist film 20 after development can be formed into a shape that gradually slopes from the center to the outer edge.

As described above, the mask of the present modification has the light-transmitting portion 85 in the central portion of the pattern forming region A in which the translucent film 3 and the light-shielding film 5 are not present. In addition, in the mask of the present modification, a plurality of translucent portions having different light transmittances (that is, the first translucent portion 111 , the first translucent portion 111 , the second The second translucent portion 112 , the third translucent portion 113 and the fourth translucent portion 114 ), the light transmittance of the plurality of translucent portions decreases toward the outer edge of the pattern forming area A.

In addition, in the above-mentioned mask 1F, the overlapping region 10 formed in the central region 110 of the pattern forming region A has a circular shape, and the first translucent portion 111 , the second translucent portion 112 , the third translucent portion 113 , and the fourth translucent portion 111 . The translucent portion 114 is formed in an annular structure, but is not limited to this. That is, the mask of this modification has the light-transmitting portion 85 in the central portion of the pattern-forming region A, and a plurality of semitransparent portions are formed so as to surround the light-transmitting portion 85 so that the light transmittance is directed toward the peripheral portion of the pattern-forming region A. Gradually increase it. For example, the light-transmitting portion 85 and the plurality of translucent portions may be oval, rectangular, or the like.

The present invention is not limited to the above-mentioned embodiments, and various modifications can be made within the scope of the patent application. The technical scope of the present invention also includes embodiments formed by appropriately combining technical means disclosed in different embodiments.

1A~1F: Photomask 2: Transparent substrate 3: Translucent film 4: Etch stop film 5: shading film 7,85: Translucent part 10, 86, 103: Overlap area 11: Non-overlapping regions 12: Plaid pattern area 14, 17, 70, 80, 88, 90, 102, 110: Central area 15, 81, 103: Area 16: Translucent area 18,87: Radial area 20,84: Photoresist film 30,50: Photomask substrate 40,60: First photoresist film 40A, 41A, 60A, 61A: painted area 41,61: Second photoresist film 71: Spiral region 78: Blend Zone 82, 91, 100, 111: first translucent part 83, 92, 101, 112: Second translucent part 86: Overlap area 89: Whirlpool area 93,113: Third Translucent Section 94,114: Fourth Translucent Section A: Pattern forming area D1: The first area D2: The second area P1~P14, R1~R10, Q1~Q12, S1~S12, T1~T12: Steps

FIG. 1 is a plan view showing the structure of a mask according to a first embodiment of the present invention; Fig. 2a is a schematic diagram showing the pattern design formed in the pattern forming area of the above-mentioned photomask; Figure 2b is a cross-sectional view showing the above-mentioned photomask cut on a plane perpendicular to the transparent substrate; Fig. 3a is a schematic diagram showing the light intensity irradiated to the photoresist film when the photoresist film on the substrate to be transferred is irradiated with light through the above-mentioned mask; Figure 3b is a shape diagram showing the photoresist film on the to-be-transferred substrate after exposure and development through the above-mentioned mask; FIG. 4 is a diagram illustrating a method of manufacturing the above-mentioned mask; FIG. 5 is a diagram for explaining the method of manufacturing the above-mentioned mask; FIG. 6 is a diagram for explaining a method of manufacturing the above-mentioned mask; FIG. 7 is a diagram for explaining a method of manufacturing the above-mentioned mask; Fig. 8a is a plan view showing a pattern forming area which is a modification of the above-mentioned pattern forming area; Fig. 8b is a graph showing the intensity of light irradiated to the photoresist film when the photoresist film is irradiated with light through the photomask provided with the pattern forming region as the above-mentioned modification; Figure 8c is a diagram showing the shape of the photoresist film after exposing and developing the photosensitive photoresist film through the above-mentioned mask; Fig. 9a is a plan view showing a pattern forming area as another modification of the above pattern forming area; Fig. 9b is a graph showing the intensity of light irradiated to the photoresist film when the photoresist film is irradiated with light through a photomask provided with a pattern forming region as another modification of the above; Figure 9c is a diagram showing the shape of the photoresist film after exposing and developing the photosensitive photoresist film through the above-mentioned mask; Fig. 10a is a plan view showing a pattern formation area as another modification of the above pattern formation area; Fig. 10b is a graph showing the intensity of light irradiated to the photoresist film when the photoresist film is irradiated with light through a photomask provided with a pattern forming region as another modification of the above; Figure 10c is a diagram showing the shape of the photoresist film after exposing and developing the photosensitive photoresist film through the above-mentioned mask; Fig. 11a is a plan view showing a pattern formation area as another modification of the above pattern formation area; Fig. 11b is a graph showing the intensity of light irradiated to the photoresist film when the photoresist film is irradiated with light through a photomask provided with a pattern forming region as another modification of the above; Fig. 11c is a diagram showing the shape of the photoresist film after the photosensitive photoresist film is exposed and developed through the above-mentioned mask; Fig. 12a is a plan view showing a pattern formation area as another modification of the above pattern formation area; Fig. 12b is a graph showing the intensity of light irradiated to the photoresist film when the photoresist film is irradiated with light through a photomask provided with a pattern forming region as another modification of the above; Fig. 12c is a diagram showing the shape of the photoresist film after exposing and developing the photosensitive photoresist film through the above-mentioned mask; Fig. 13a is a plan view showing a pattern formation area as another modification of the above pattern formation area; Fig. 13b is a graph showing the intensity of light irradiated to the photoresist film when the photoresist film is irradiated with light through a photomask provided with a pattern forming region as another modification of the above; Fig. 13c is a diagram showing the shape of the photoresist film after exposing and developing the photosensitive photoresist film through the above-mentioned mask; Fig. 14a is a drawing showing a pattern design formed in a pattern forming region of a photomask having a pattern forming region as another modification of the above; Fig. 14b is a cross-sectional view showing the above-mentioned reticle cut in a plane perpendicular to the transparent substrate; Fig. 15a is a graph showing the intensity of light irradiated to the photoresist film when the photoresist film is irradiated with light through a photomask provided with a pattern forming region as another modification of the above; Fig. 15b is a diagram showing the shape of the photoresist film after the photosensitive photoresist film is exposed and developed through the above-mentioned mask; FIG. 16 is a diagram illustrating a method of manufacturing the above-mentioned mask; FIG. 17 is a diagram illustrating a method of manufacturing the above-mentioned mask; FIG. 18 is a diagram illustrating a method of manufacturing the above-mentioned mask; FIG. 19a is a schematic diagram showing a pattern design formed in a pattern forming area of a photomask according to a second embodiment of the present invention; Figure 19b is a cross-sectional view showing the above-mentioned photomask cut on a plane perpendicular to the transparent substrate; FIG. 20 is a diagram for explaining a method of manufacturing the above-mentioned photomask; FIG. 21 is a diagram for explaining the method of manufacturing the above-mentioned mask; FIG. 22 is a diagram illustrating a method of manufacturing the above-mentioned mask; FIG. 23 is a plan view showing a pattern forming area of a photomask according to a third embodiment of the present invention; FIG. 24 is a plan view showing a pattern forming region of a photomask as a modification of the above-described photomask; FIG. 25 is a diagram showing the shape of the photoresist film after exposing and developing the negative photoresist film on the substrate to be transferred through the photomask according to the first embodiment of the present invention; FIG. 26a is a schematic diagram showing a pattern design formed in a pattern forming area of a photomask according to a fifth embodiment of the present invention; 26b is a cross-sectional view showing the above-mentioned photomask cut in a plane perpendicular to the transparent substrate; FIG. 27 is a diagram showing the shape of the photoresist film after exposing and developing the positive photoresist film on the substrate to be transferred through the above-mentioned photomask; Fig. 28 is a shape diagram showing the photoresist film after exposing and developing the negative photoresist film on the substrate to be transferred through the above-mentioned photomask; FIG. 29 is a diagram illustrating a method of manufacturing the above-mentioned mask; Fig. 30 is a diagram for explaining the method of manufacturing the above-mentioned mask; FIG. 31 is a diagram illustrating a method of manufacturing the above-mentioned mask; FIG. 32a is a schematic diagram showing a pattern design formed in a pattern forming area of a photomask according to a sixth embodiment of the present invention; Fig. 32b is a cross-sectional view showing the above-mentioned photomask cut in a plane perpendicular to the transparent substrate; Fig. 33 is a diagram for explaining the method of manufacturing the above-mentioned mask; FIG. 34 is a diagram illustrating a method of manufacturing the above-mentioned mask; Fig. 35 is a diagram for explaining the method of manufacturing the above-mentioned photomask; FIG. 36 is a plan view showing a pattern forming region of a photomask as a modification of the above-described photomask; FIG. 37 is a plan view showing a pattern forming region of a photomask as a modification of the above-described photomask; FIG. 38 is a plan view showing a pattern forming region of a photomask as a modification of the above-described photomask; FIG. 39 is a plan view showing a pattern forming region of a photomask as a modification of the above-described photomask; FIG. 40 is a plan view showing a pattern forming region of a photomask as a modification of the above-described photomask; Fig. 41 is a plan view showing a pattern forming region of a photomask as a modification of the above-described photomask; and FIG. 42 is a plan view showing a pattern forming region of a photomask as a modification of the above-described photomask.

D1: The first area

D2: The second area

A: Pattern forming area

7: Translucent part

10: Overlap area

11: Non-overlapping regions

Claims (19)

A photomask has a plurality of pattern forming regions on a transparent substrate, the pattern forming regions have a predetermined shape, the predetermined shape includes at least two regions with different light transmittances from each other, and the pattern forming regions are included The area of the predetermined area in the central part of the 1 is defined as a first area; the area of the predetermined area in the outer edge of the pattern forming areas is defined as a second area, The light transmittance in the second region is higher or lower than the light transmittance in the first region. The photomask of claim 1, wherein the second area is formed as a concentric circle with respect to the first area. The photomask of claim 1, wherein when the pattern forming regions are viewed in plan, a circular arc shape is included in at least a portion of the outer edge shape. The photomask of claim 1, wherein the patterning regions have a polygonal shape. The photomask according to any one of claims 1 to 4, wherein the pattern-forming regions are formed by at least laminating so that the pattern of the semi-transparent film and the pattern of a light-shielding film are partially overlapped; There is a light-transmitting portion on the transparent substrate where the pattern forming regions are not formed; The light transmittance of the second region is higher than the light transmittance of the first region. The photomask according to claim 5, wherein when the pattern forming regions are observed in a plan view, the overlapping regions where the translucent film and the light shielding film overlap are radially formed from a central portion to an outer edge portion of the pattern forming regions or spiral extension. The photomask of claim 5, wherein when the pattern forming regions are observed in a plan view, the translucent film has a plurality of non-overlapping regions, and the non-overlapping regions have a predetermined shape that does not overlap the light-shielding film; The non-overlapping regions are formed such that the area increases toward the outer edge portion. The mask according to claim 5, wherein when the pattern forming regions are observed in a plan view, a lattice pattern region is formed, and the lattice pattern region is alternately arranged with a plurality of overlapping regions of a rectangle and a plurality of non-overlapping regions of a rectangle, The overlapping regions of the rectangle are overlapping of the translucent film and the light-shielding film; the non-overlapping regions of the rectangle are that the light-shielding film does not overlap on the translucent film; The area where the light-shielding film does not overlap the translucent film is formed on the periphery of the lattice pattern area. The photomask according to claim 5, wherein when the pattern forming regions are observed in a plan view, the light-transmitting portion without the light shielding film and the translucent film is formed on the outer edge of the pattern forming regions . The photomask according to any one of claims 1 to 4, wherein in the pattern forming regions, at least a light-transmitting portion and a translucent portion formed by a translucent film are formed; In a region where the pattern forming regions are not formed, a light shielding portion formed by laminating the translucent film and a light shielding film is formed on the transparent substrate; The light transmittance of the second region is lower than the light transmittance of the first region. The photomask of claim 10, wherein when the pattern forming regions are observed in plan view, the light-transmitting portion without the light-shielding film and the translucent film is outward from the central portion of the pattern forming regions The edge extends radially or spirally. The photomask of claim 10, wherein when the pattern forming region is observed in a plan view, the translucent film has a plurality of non-overlapping regions, and the non-overlapping regions have a predetermined shape that does not overlap the light-shielding film; The non-overlapping regions are formed such that the area increases toward the outer edge portion. The mask according to claim 10, wherein when the pattern forming regions are observed in a plan view, a lattice pattern region is formed, and the lattice pattern region is alternately arranged with a plurality of the light-transmitting parts and a plurality of rectangular non-overlapping regions, The light-transmitting parts do not have the light-shielding film and the translucent film; the rectangular non-overlapping regions are that the light-shielding film does not overlap the translucent film; The non-overlapping regions are formed on the periphery of the lattice pattern region. The photomask according to claim 10, wherein when the pattern forming regions are observed in a plan view, overlapping regions where the translucent film and the light shielding film overlap are formed at outer edges of the pattern forming regions. A method for manufacturing a photomask, comprising: a translucent area on which a translucent film is formed on a transparent substrate; an overlapping area, at least the translucent film and a light-shielding film are stacked on the transparent substrate, so that the translucent film is more The light-shielding film is closer to the transparent substrate; and the transparent region exposes the transparent substrate, which includes the following steps: The step of preparing a photomask substrate, at least the translucent film and the light-shielding film are laminated and formed on the surface of the transparent substrate, so that the translucent film is closer to the transparent substrate than the light-shielding film; In the step of forming a first photoresist pattern, a first photoresist film is formed on the surface of the mask substrate, and a drawing device is used to draw the first photoresist film on the first photoresist film; using the first photoresist pattern as a mask to remove part of the light shielding film; a step of removing the exposed translucent film; In the step of forming a second photoresist pattern, a second photoresist film is formed on the entire surface of the photomask including the light shielding film, and a drawing device is used to draw the second photoresist film; and the step of removing part of the light shielding film by using the second photoresist pattern as a mask, When the area including the predetermined area of the central part of a pattern forming area formed by the light shielding film and the translucent film is defined as a first area, and the area of the predetermined area on the peripheral part of the pattern forming area is defined as When being a second area, the pattern forming area is formed such that the light transmittance in the second area is higher than that in the first area. A method of manufacturing a photomask, comprising: a translucent area, a translucent film is formed on a transparent substrate; an overlapping area, a light-shielding film and the translucent film are sequentially stacked on the transparent substrate; and a transparent area, the The transparent substrate is exposed, which includes the following steps: The step of preparing a mask substrate with the light-shielding film formed on the surface of the transparent substrate; The step of forming a first photoresist film on the surface of the mask substrate; using a drawing device to draw on the first photoresist film to form a first photoresist pattern; using the first photoresist pattern as a mask to remove part of the light shielding film; the step of forming a translucent film on the entire surface of the photomask including the light shielding film; The step of forming a second photoresist on the surface of the translucent film; using a drawing device to draw on the second photoresist film to form a second photoresist pattern; and the step of removing part of the translucent film by using the second photoresist pattern as a mask, When the area including the predetermined area of the central part of a pattern forming area formed by the light shielding film and the translucent film is defined as a first area, and the area of the predetermined area on the peripheral part of the pattern forming area is defined as When being a second area, the pattern forming area is formed such that the light transmittance in the second area is higher than that in the first area. A method of manufacturing a photomask, comprising: a translucent area, a translucent film is formed on a transparent substrate; an overlapping area, a light-shielding film and the translucent film are stacked so that the translucent film is closer to the light-shielding film than the light-shielding film. A transparent substrate; and a transparent area, so that the transparent substrate is exposed, which includes the following steps: The step of preparing a photomask substrate, at least the translucent film and the light-shielding film are laminated and formed on the surface of the transparent substrate, so that the translucent film is closer to the transparent substrate than the light-shielding film; In the step of forming a first photoresist pattern, a first photoresist film is formed on the surface of the mask substrate, and a drawing device is used to draw the first photoresist film on the first photoresist film; using the first photoresist pattern as a mask to remove part of the light shielding film; a step of removing the exposed translucent film; In the step of forming a second photoresist pattern, a second photoresist film is formed on the entire surface of the photomask including the light shielding film, and a drawing device is used to draw the second photoresist film; and the step of removing part of the translucent film by using the second photoresist pattern as a mask, When the area including the predetermined area of the central part of a pattern forming area formed by the light shielding film and the translucent film is defined as a first area, and the area of the predetermined area on the peripheral part of the pattern forming area is defined as When being a second area, the pattern forming area is formed such that the light transmittance in the second area is lower than that in the first area. A method of manufacturing a photomask, comprising: a translucent area, a translucent film is formed on a transparent substrate; an overlapping area, a light-shielding film and the translucent film are sequentially stacked on the transparent substrate; and a transparent area, the The transparent substrate is exposed, which includes the following steps: The step of preparing a mask substrate with the light-shielding film formed on the surface of the transparent substrate; The step of forming a first photoresist film on the surface of the mask substrate; using a drawing device to draw on the first photoresist film to form a first photoresist pattern; using the first photoresist pattern as a mask to remove part of the light shielding film; the step of forming a translucent film on the entire surface of the photomask including the light shielding film; The step of forming a second photoresist film on the surface of the translucent film; using a drawing device to draw on the second photoresist film to form a second photoresist pattern; and the step of removing part of the translucent film by using the second photoresist pattern as a mask, When the area including the predetermined area of the central part of a pattern forming area formed by the light shielding film and the translucent film is defined as a first area, and the area of the predetermined area on the peripheral part of the pattern forming area is defined as When being a second area, the pattern forming area is formed such that the light transmittance in the second area is lower than that in the first area. A method for manufacturing a display device, comprising a step of forming a photoresist, using the photomask as described in any one of claims 1 to 14 and forming a desired photoresist shape on a substrate to be transferred, wherein the photoresist The formation steps of the resistance include: an exposure step of exposing the photoresist through the photomask; and The step of forming the desired photoresist shape by developing the exposed photoresist.

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