KR20220092775A - Photomask, method of manufacturing same, and method of manufacturing display device - Google Patents

Abstract

An objective of the present invention is to form a photosensitive resist to gently incline from the center to the outside. A photomask (1A) comprises on a transparent substrate: a plurality of pattern formation regions (A) having a predetermined shape formed by stacking a pattern of a semi-transmissive film and a pattern of a light-shielding film so as to partially overlap; and a transparent part (7) without the pattern formation regions (A). When a region of a predetermined area including a central portion of the pattern formation regions (A) is referred to as a first region (D1), and a region of a predetermined area at an outer edge of the pattern formation regions (A) is referred to as a second region (D2), the transmittance in the second region (D2) is higher than the transmittance in the first region (D1).

Description

A photomask, a method for manufacturing a photomask, and a method for manufacturing a display device

The present invention relates to a photomask, a method for manufacturing a photomask, and a method for manufacturing a display device.

A technique for forming a resist into a desired shape by exposure using a photomask is known. For example, Patent Document 1 discloses a method of manufacturing a multi-gradation photomask having a stepped pattern in at least one layer on the surface of the mask substrate.

Patent Document 1: Japanese Patent Application Laid-Open No. 2018-45016

In the case of forming a resist having a concave-convex shape on a transfer target substrate by exposure using a photomask, it is desired to gently incline the resist in an arbitrary region from the center of the resist to the outside.

SUMMARY OF THE INVENTION One aspect of the present invention aims to provide a photomask capable of forming a shape gently inclined with respect to a photosensitive resist of a transfer target substrate, a method for manufacturing the same, and the like.

In order to solve the above problems, a photomask according to an aspect of the present invention has a plurality of pattern formation regions having a predetermined shape including at least two regions having different transmittances from each other on a transparent substrate, and the pattern formation A region having a predetermined area including the central portion of the region is referred to as a first region, and a region having a predetermined area at the outer edge of the pattern formation region is referred to as a second region, and the transmittance within the first region is higher than the transmittance within the second region. Transmittance is high or low.

In order to solve the above problems, in the method for manufacturing a photomask according to an aspect of the present invention, a semi-transmissive region by a semi-transmissive film on a transparent substrate, and at least the semi-transmissive film and the light-shielding film on the transparent substrate, A method of manufacturing a photomask comprising: a laminated region in which a semi-transmissive film is stacked on the transparent substrate side rather than the light-shielding film; and a transparent region in which the transparent substrate is exposed. A step of preparing a mask blank in which the light-shielding film is laminated so that the semi-transmissive film is positioned on the transparent substrate side than the light-shielding film, a first photoresist film is formed on the surface of the mask blank, and the first photoresist film is A step of forming a first photoresist pattern by drawing the first photoresist film with a drawing device, a step of removing a part of the light-shielding film using the first photoresist pattern as a mask, and removing the exposed transflective film forming a second photoresist film on the entire surface of the photomask including a light-shielding film, and writing the second photoresist film with a writing apparatus to form the second photoresist pattern; 2 using the photoresist pattern as a mask to remove a part of the light-shielding film, wherein a region of a predetermined area including the central portion of the pattern formation region formed by the light-shielding film and the semi-transmissive film is referred to as a first region, When a region of a predetermined area in the outer periphery of the pattern formation region is referred to as a second region, the pattern formation region is formed such that the transmittance in the second region is higher than the transmittance in the first region.

In order to solve the above problems, in the method for manufacturing a photomask according to an aspect of the present invention, a semi-transmissive region by a semi-transmissive film on a transparent substrate, a light-shielding film and the semi-transmissive film on the transparent substrate, in this order A method of manufacturing a photomask having a laminated region and a transparent region exposed to the transparent substrate, the method comprising: preparing a mask blank in which a light-shielding film is formed on a surface of the transparent substrate; and a first photoresist on the surface of the mask blank; A step of forming a film, a step of forming a first photoresist pattern by drawing on the first photoresist film with a drawing apparatus, a step of removing a part of the light-shielding film using the first photoresist pattern as a mask; forming a semi-transmissive film on the entire surface of the photomask including the light-shielding film; forming a second photoresist film on the surface of the semi-transmissive film; a step of forming a second photoresist pattern; and a step of removing a portion of the semi-transmissive layer using the second photoresist pattern as a mask, wherein a central portion of a pattern formation region formed by the light-shielding layer and the semi-transmissive layer is formed. The transmittance in the second region is higher than the transmittance in the first region when a region of a predetermined area including is referred to as a first region, and a region of a predetermined area in the outer periphery of the pattern formation region is referred to as a second region, The pattern forming region is formed.

In order to solve the above problems, a method for manufacturing a photomask according to an aspect of the present invention includes a semi-transmissive region by a semi-transmissive film on a transparent substrate, and at least the semi-transmissive film and the light-shielding film on the transparent substrate, A method of manufacturing a photomask comprising: a laminated region in which the semi-transmissive film is positioned on the transparent substrate side than the light-shielding film; and a transparent region in which the transparent substrate is exposed. and preparing a mask blank in which the light-shielding film is laminated so that the semi-transmissive film is positioned on the transparent substrate side than the light-shielding film, and a first photoresist film is formed on the surface of the mask blank, and the first photoresist film a step of forming a first photoresist pattern by drawing the first photoresist film with a drawing device, a step of removing a part of the light-shielding film using the first photoresist pattern as a mask, and the exposed transflective film removing, forming a second photoresist film on the entire surface of the photomask including the light-shielding film, and writing the second photoresist film with a writing apparatus to form a second photoresist pattern; 2 using the photoresist pattern as a mask to remove a portion of the semi-transmissive film, wherein a region of a predetermined area including the central portion of the pattern formation region formed by the light-shielding film and the semi-transmissive film is referred to as a first region, , the pattern forming region is formed such that the transmittance in the second region is lower than the transmittance in the first region when a region of a predetermined area in the outer periphery of the pattern forming region is referred to as a second region.

In order to solve the above problems, in the method for manufacturing a photomask according to an aspect of the present invention, a semi-transmissive region by a semi-transmissive film on a transparent substrate, a light-shielding film and the semi-transmissive film on the transparent substrate, in this order A method of manufacturing a photomask having a laminated region and a transparent region exposed to the transparent substrate, the method comprising: preparing a mask blank in which a light-shielding film is formed on a surface of the transparent substrate; and a first photoresist on the surface of the mask blank; A step of forming a film, a step of forming a first photoresist pattern by drawing on the first photoresist film with a drawing apparatus, a step of removing a part of the light-shielding film using the first photoresist pattern as a mask; forming a semi-transmissive film on the entire surface of the photomask including the light-shielding film; forming a second photoresist film on the surface of the semi-transmissive film; a step of forming a second photoresist pattern; and a step of removing a portion of the semi-transmissive layer using the second photoresist pattern as a mask, wherein a central portion of a pattern formation region formed by the light-shielding layer and the semi-transmissive layer is formed. The transmittance in the second region is lower than the transmittance in the first region when a region of a predetermined area including the region is referred to as a first region, and a region of a predetermined area in the outer periphery of the pattern formation region is referred to as a second region, The pattern forming region is formed.

According to one aspect of the present invention, it is possible to form a gently inclined shape with respect to the photosensitive resist in an arbitrary region of the photosensitive resist of the transfer target substrate.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing the configuration of a photomask according to a first embodiment of the present invention.
Fig. 2(a) is a view showing a pattern design formed in a pattern formation region of the photomask, and Fig. 2(b) is a cross-sectional view of the photomask cut in a plane perpendicular to a transparent substrate.
3(a) is a diagram showing the intensity of light irradiated to the photoresist film when light is irradiated to the photoresist film on the transfer target substrate through the photomask, and FIG. 3(b) is the photomask A diagram showing the shape of the photoresist film after being developed by exposing the photosensitive photoresist film on the transfer target substrate through .
4 is a view for explaining a method of manufacturing the photomask.
5 is a view for explaining a method of manufacturing the photomask;
6 is a view for explaining a method of manufacturing the photomask.
7 is a view for explaining a method of manufacturing the photomask.
Fig. 8(a) is a plan view showing a pattern formation region as a modification of the pattern formation region, and Fig. 8(b) is a photomask having a pattern formation region as a modification example to irradiate the photoresist film with light. It is a figure showing the intensity of light irradiated to the photoresist film at the time, and FIG. 8(c) is a figure showing the shape of the photoresist film after developing and exposing the photoresist film through the photomask.
Fig. 9 (a) is a plan view showing a pattern formation region as a further modification of the pattern formation region, and Fig. 9 (b) is a photoresist film through a photomask having a pattern formation region as the additional modification example. It is a diagram showing the intensity of light irradiated to the photoresist film when irradiated, and FIG. 9(c) shows the shape of the photoresist film after developing and exposing the photoresist film through the photomask. drawing.
Fig. 10 (a) is a plan view showing a pattern formation region as a further modification of the pattern formation region, and Fig. 10 (b) is a photoresist film through a photomask having a pattern formation region as the additional modification example. It is a diagram showing the intensity of light irradiated to the photoresist film when irradiated, and FIG. 10( c ) shows the shape of the photoresist film after developing and exposing the photoresist film through the photomask. drawing.
Fig. 11 (a) is a plan view showing a pattern formation region as a further modification of the pattern formation region, and Fig. 11 (b) is a photoresist film through a photomask having a pattern formation region as the additional modification example. It is a diagram showing the intensity of light irradiated to the photoresist film when irradiated, and FIG. 10( c ) shows the shape of the photoresist film after developing and exposing the photoresist film through the photomask. drawing.
Fig. 12 (a) is a plan view showing a pattern formation region as a further modification of the pattern formation region, and Fig. 12 (b) is a photoresist film through a photomask having a pattern formation region as the additional modification example. It is a diagram showing the intensity of light irradiated to the photoresist film when irradiated, and FIG. 12(c) shows the shape of the photoresist film after developing and exposing the photoresist film through the photomask. drawing.
Fig. 13 (a) is a plan view showing a pattern formation region as a further modification of the pattern formation region, and Fig. 13 (b) is a photoresist film through a photomask having a pattern formation region as the additional modification example. It is a view showing the intensity of light irradiated to the photoresist film when irradiated, and FIG. 13(c) shows the shape of the photoresist film after developing and exposing the photoresist film through the photomask. drawing.
Fig. 14(a) is a view showing a pattern design formed in a pattern forming area of a photomask having a pattern forming area as the further modification example, and Fig. 14(b) is a photo cut in a plane perpendicular to a transparent substrate. Cross section of the mask.
Fig. 15(a) is a view showing the intensity of light irradiated to the photoresist film when light is irradiated to the photoresist film through a photomask having a pattern formation region as the additional modification example, Fig. 15(b) is a diagram showing the shape of the photoresist film after developing and exposing the photoresist film through the photomask.
16 is a view for explaining a method of manufacturing the photomask;
17 is a view for explaining a method of manufacturing the photomask;
18 is a view for explaining a method of manufacturing the photomask;
19 (a) is a view showing a pattern design formed in a pattern formation region of a photomask according to a second embodiment of the present invention, and FIG. 19 (b) is a view of the photo mask cut in a plane perpendicular to the transparent substrate. Cross-section.
20 is a view for explaining a method of manufacturing the photomask;
21 is a view for explaining a method of manufacturing the photomask;
Fig. 22 is a view for explaining a method of manufacturing the photomask;
Fig. 23 is a plan view showing a pattern formation region of a photomask according to a third embodiment of the present invention;
Fig. 24 is a plan view showing a pattern formation region of a photomask as a modification of the photomask.
Fig. 25 is a view showing the shape of the photoresist film after developing and exposing the negative photoresist film on the transfer target substrate through the photomask according to the first embodiment of the present invention;
Fig. 26 (a) is a view showing a pattern design formed in a pattern formation region of a photomask according to a fifth embodiment of the present invention, and Fig. 26 (b) is a view of the photomask cut in a plane perpendicular to the transparent substrate. Cross-section.
Fig. 27 is a diagram showing the shape of the photoresist film after being developed by exposing and developing the positive photoresist film on the transfer target substrate through the photomask.
Fig. 28 is a diagram showing the shape of the photoresist film after developing and exposing the negative photoresist film on the transfer target substrate through the photomask.
Fig. 29 is a view for explaining a method of manufacturing the photomask;
30 is a view for explaining a method of manufacturing the photomask;
Fig. 31 is a view for explaining a method of manufacturing the photomask;
32(a) is a view showing a pattern design formed in a pattern formation area of a photomask according to a sixth embodiment of the present invention, and FIG. 32(b) is a view of the photomask cut in a plane perpendicular to the transparent substrate. Cross-section.
Fig. 33 is a view for explaining a method of manufacturing the photomask;
Fig. 34 is a view for explaining a method of manufacturing the photomask;
Fig. 35 is a view for explaining a method of manufacturing the photomask;
Fig. 36 is a plan view showing a pattern formation region of a photomask as a modification of the photomask.
Fig. 37 is a plan view showing a pattern formation region of a photomask as a modification of the photomask.
Fig. 38 is a plan view showing a pattern formation region of a photomask as a modification of the photomask.
Fig. 39 is a plan view showing a pattern formation region of a photomask as a modification of the photomask.
Fig. 40 is a plan view showing a pattern formation region of a photomask as a modification of the photomask.
Fig. 41 is a plan view showing a pattern formation region of a photomask as a modification of the photomask.
Fig. 42 is a plan view showing a pattern formation region of a photomask as a modification of the photomask.

Hereinafter, an embodiment of the present invention will be described in detail. Fig. 1 is a plan view showing the configuration of a photomask 1A in the present embodiment. FIG. 2(a) is a view showing a pattern design formed in the pattern formation area A of the photomask 1A, and FIG. 2(b) is a photomask cut in a plane perpendicular to the transparent substrate 2 ( 1A) is a cross-sectional view. On the other hand, Fig. 2(b) is an enlarged cross-sectional view of the periphery of one pattern formation region A, which will be described later.

1 and 2, the photomask 1A has a structure in which a transparent substrate 2, a semi-transmissive film 3, an etching stopper film 4, and a light blocking film 5 are stacked in this order. has been On the other hand, the semi-transmissive film 3, the etching stopper film 4, and the light-shielding film 5 are not arranged in all regions of the transparent substrate 2, and as shown in Fig. 2(b), the pattern formation region ( A) is properly placed.

The transparent substrate 2 is a light-transmitting substrate, and can be made of, for example, quartz glass. The semi-transmissive film 3 is a film that transmits a part of the irradiated light, and for example, a chromium-based material such as chromium oxide, chromium nitride, or chromium oxynitride may be used. The etching stopper film 4 is a film for preventing the semi-transmissive film 3 from being etched when the light shielding film 5 is etched. The etching stopper film 4 is made of a material that is not etched by the solvent for etching the light-shielding film 5 . As the etching stopper film 4, for example, titanium, nickel, molybdenum silicide, or the like can be used. The light shielding film 5 is a film through which light does not transmit, and an optical density (OD) value of 2.7 or more is suitable. As the light-shielding film 5, for example, a chromium film can be used.

As shown in FIG. 1, in the photomask 1A, the pattern formation area|region A is arrange|positioned in the grid|lattice shape. The pattern formation regions A are respectively formed at positions corresponding to respective pixels of the display device. The region in which the pattern formation region A is not formed serves as a light-transmitting portion 7 through which light is transmitted.

Next, the pattern design formed in the pattern formation area A in the photomask 1A is demonstrated. On the other hand, in the following description, in the case of demonstrating the pattern design of a photomask, the case where the photomask is planarly viewed from the side opposite to the transparent substrate 2 side is demonstrated.

As shown to Fig.2 (a), the pattern formation area|region A of 1 A of photomasks has become circular shape. In the pattern formation region A of the photomask 1A, an overlap region 10 in which the light-shielding film 5 and the semi-transmissive film 3 are overlapped in a central portion including the center of the pattern formation region A has a circular shape. is formed with Further, in the pattern formation region A, a non-overlapping region 11 in which only the semi-transmissive film 3 is formed is formed so as to surround the overlapping region 10 . In other words, the non-overlapping region 11 is formed on the outer edge of the pattern formation region A. As shown in FIG. The non-overlapping region 11 is formed concentrically with respect to the overlapping region 10 .

In the present disclosure, the transmittance of light in a region of a predetermined area within the pattern formation area A is used as an index indicating the difference in light transmittance of each part in the pattern forming area A. As shown in FIG. A region of a predetermined area including the central portion of the pattern formation region A is called a first region D1, and a region of a predetermined area at the outer edge of the pattern formation region A is called a second region D2. . The first region D1 and the second region D2 are conceptual regions for explaining a difference in transmittance between the central portion and the outer edge portion of the pattern forming region A. The first region D1 and the second region D2 are the transmittances of the pattern forming region A. The central part of the 1st area|region D1 substantially coincides with the center part of the pattern formation area|region A. Therefore, the first region D1 is a region including at least the overlapping region 10 . On the other hand, the central portion of the second region D2 is located at the outer edge of the pattern forming region A. Accordingly, the second region D2 is a region including at least the non-overlapping region 11 formed on the outer edge of the pattern forming region A. As shown in FIG. Since the first region D1 and the second region D2 are set in this way, the transmittance in the second region D2 is higher than the transmittance in the first region D1. In addition, when the pattern formation area|region A is circular, the center part of the pattern formation area|region A means the center of the circle or the part in the vicinity of the center.

When the first region D1 and the second region D2 are rectangular, the size of these regions is, for example, 1 μm×1 μm or more. The diameter of the overlapping area|region 10 of the pattern area|region A in the photomask of one aspect|mode of this invention is 10 micrometers - 60 micrometers, and the width|variety of the radial direction of the non-overlapping area|region 11 is 3 micrometers - 20 micrometers. What is necessary is just to set the 1st area|region D1 and the 2nd area|region D2 so that it does not protrude outside from the pattern formation area|region A. When regions with different transmittances exist in the first region D1 or the second region D2, the average transmittance in the region is the transmittance of the first region D1 or the second region D2. .

In the example shown in Fig.2 (a), the 1st area|region D1 is a rectangular area|region including only the overlapping area|region 10 in the center part of the pattern formation area|region A. The second region D2 is a region including only the non-overlapping region 11 formed on the outer edge portion. In the example shown in Fig. 2(a), the first region D1 and the second region D2 are shown as rectangles, but the first region D1 and the second region D2 may be circular, polygonal, or the like. free The above-described method of setting the first region D1 and the second region D2 is the same for Modifications 1 to 7 and Embodiment 2 described later.

Fig. 3A is a diagram showing the intensity of light irradiated to the photoresist film 20 when light is irradiated to the positive photoresist film 20 on the transfer target substrate through the photomask 1A. 3B is a diagram showing the shape of the photoresist film 20 after being developed by exposing the photoresist film 20 on the transfer target substrate through the photomask 1A. In FIG. 3A , the darker the black region, the smaller the intensity of light irradiated to the photoresist film 20 is. In this regard, Fig. 9 (a), Fig. 11 (a), Fig. 13 (a), Fig. 15 (a), Fig. 17 (a), Fig. 19 (a), Fig. 21 (a), which will be described later, also The same is true.

As shown in Fig. 3(a) , since the light-shielding film 5 is present in the central portion of the pattern formation region A, the intensity of light irradiated to the central portion of the photoresist film 20 is reduced. In addition, since only the semi-transmissive film 3 exists at the outer edge of the pattern formation area A as if it surrounds the overlapping area 10, the photoresist film 20 goes outward from the center. The intensity of the light irradiated to it is increasing. About this point, it is the same also about the modification 1-7 mentioned later. Accordingly, as shown in Fig. 3(b), the photoresist film 20 after development is a region corresponding to the outer edge of the pattern formation region A of the photomask 1A, that is, the photoresist film 20 ) has a gently sloping outer edge.

As described above, by exposing and developing the photoresist film 20 through the photomask 1A in this embodiment, it is possible to gently incline the outer edge of the photoresist film 20 . In other words, the photoresist film 20 may be gently inclined from the center to the outside.

Moreover, in the photomask 1A of this embodiment, the non-overlapping area|region 11 is formed concentrically with respect to the overlapping area|region 10. As shown in FIG. Thereby, the intensity of light irradiated to the photoresist film 20 can be increased concentrically and stepwise from the center of the photoresist film toward the outside.

Next, the manufacturing method of 1 A of photomasks is demonstrated. 4 to 7 are diagrams for explaining a method of manufacturing the photomask 1A. As shown in FIG. 4 , in the manufacture of the photomask 1A, first, on the surface of the transparent substrate 2 , the semi-transmissive film 3 , the etching stopper film 4 , and the light-shielding film 5 are formed in this order. to prepare a mask blank 30 formed by laminating with (hereinafter, referred to as a first step (P1)).

Next, a first photoresist film 40 is formed on the surface of the mask blank 30 (hereinafter, referred to as a second process P2). Thereafter, the first photoresist film 40 is drawn with a drawing apparatus (hereinafter referred to as a third step (P3)). In the third step (P3), when the mask blank 30 is viewed in a plan view, the first photoresist film 40 after development is drawn so that the pattern formation region A has a shape (that is, a substantially circular shape). do.

In addition, although not shown in figure, in the 3rd process P3, in order to perform the alignment called alignment in the 10th process P10 mentioned later, you may form the alignment mark used as a reference|standard of alignment at the same time. More specifically, an alignment mark is formed in each corner of the transparent substrate 2 .

Next, the first photoresist film 40 is developed to remove the drawn region 40A in the first photoresist film 40 to form a first photoresist pattern (hereinafter, a fourth step ( P4)). The third step (P3) and the fourth step (P4) are steps of forming the first photoresist pattern.

Next, as shown in FIG. 5 , using the patterned first photoresist film 40 (that is, the first photoresist pattern) as a mask, the light-shielding film 5 is etched to form a pattern of the light-shielding film 5 . (hereinafter referred to as a fifth step (P5)). In the fifth step P5, only the light-shielding film 5 is etched and removed by using a solvent that does not dissolve the etching stopper film 4 as a solvent for etching the light-shielding film 5 .

Next, using the first photoresist pattern and the light blocking film 5 as masks, the etching stopper film 4 is removed (hereinafter referred to as a sixth step (P6)). Thereafter, the semi-transmissive film 3 exposed by removing the etching stopper film 4 is removed (hereinafter referred to as a seventh step (P7)). Next, the remaining first photoresist film 40 is removed (hereinafter referred to as an eighth step (P8)).

Next, as shown in FIG. 6 , a second photoresist film 41 is formed on the entire surface of the photomask including the light-shielding film 5 (hereinafter referred to as a ninth step (P9)). Thereafter, the second photoresist film 41 is drawn by a drawing apparatus (hereinafter referred to as a tenth step (P10)). In the tenth process (P10), when the photomask is planarly viewed, it draws with respect to the outer edge part of the 2nd photoresist film 41 in a substantially circular shape. Moreover, in the tenth process P10, the area|region for drawing is positioned using the alignment mark formed in the 3rd process P3.

Next, the second photoresist film 41 is developed to remove the drawn region 41A in the second photoresist film 41 to form a second photoresist pattern (hereinafter, in the eleventh step ( P11)). The ninth process P9, the tenth process P10, and the eleventh process P11 are processes of forming the second photoresist pattern.

Then, using the patterned second photoresist film 41 (that is, the second photoresist pattern) as a mask, a pattern of the light-shielding film 5 is formed (hereinafter referred to as a twelfth step (P12)) . In the twelfth step (P12), as in the fifth step (P5), only the light-shielding film 5 is etched and removed by using a solvent that does not dissolve the etching stopper film 4 as a solvent for etching the light-shielding film 5 . .

Next, as shown in Fig. 7, using the second photoresist pattern and the light-shielding film 5 as a mask, the etching stopper film 4 is removed, and a pattern of the semi-transmissive film 3 is formed (hereinafter described). , referred to as a thirteenth step (P13)). Finally, the remaining second photoresist film 41 is removed (hereinafter referred to as a fourteenth step (P14)).

Through the above process, the overlapping region 10 is formed in a circular shape in the central portion including the center of the pattern forming region A, and the non-overlapping region 11 is formed so as to surround the overlapping region 10. Pattern formation A photomask 1A having a region can be manufactured.

On the other hand, when a solvent that does not dissolve the semi-transmissive film 3 is used as the solvent for etching the light-shielding film 5 , a mask blank that does not include the etching stopper film 4 can be used. For example, by forming the mask blank of a material having different etching resistance between the light-shielding film 5 and the semi-transmissive film 3 , only the light-shielding film 5 is selectively provided even when the etching stopper film 4 is not provided. can be etched.

Next, the manufacturing method of the display device using the photomask 1A in this embodiment is demonstrated. There is no restriction|limiting in the use of 1 A of photomasks of this invention. In particular, in a substrate for a display device constituted by laminating a plurality of layers, a resist shape with a gentle slope from the center of an arbitrary pattern to the outside can be formed with one photomask 1A. The photomask of the present invention can be advantageously applied to a photomask.

For example, in the method of manufacturing a display device using the photomask 1A in this embodiment, the steps of preparing the photomask 1A and forming a resist using the photomask 1A to form a desired resist shape includes the process. The resist formation step is a step of transferring the transfer pattern included in the photomask 1A onto the transfer target substrate using an exposure apparatus. The method of manufacturing the display device through the photomask 1A in the present embodiment further includes various other necessary steps.

As described above, the photomask 1A of the present invention makes it possible to form a resist shape with a gentle inclination along the direction from the pattern center to the outside in the outer edge portion of the pattern formation region A. Therefore, there is a great advantage in that, for example, a desired pattern can be formed at an arbitrary position on the display device.

The photomask 1A of the present invention can be exposed using an exposure apparatus known for liquid crystal and organic EL. For example, using exposure light from a short wavelength or broadband light source having a peak at 300 nm to 500 nm as an exposure apparatus, an equal magnification optical system with a numerical aperture (NA) of 0.08 to 0.12 and a coherent factor (σ) of a conventionally known level For the branch, a projection exposure apparatus can be used. On the other hand, even if the numerical aperture is 0.12 or more, it is applicable. Of course, the photomask 1A can also be applied as a photomask for proximity exposure.

<Modification 1>

A modified example of the pattern formation area A of the photomask 1A of Example 1 is demonstrated. Fig. 8(a) is a plan view showing a pattern formation region A in this modified example, and Fig. 8(b) is a light irradiated onto the photoresist film 20 through the photomask 1A of this modified example. It is a diagram showing the intensity of light irradiated to the photoresist film 20 when It is a figure which shows the shape of the photoresist film 20 later.

As shown in Fig. 8(a), in this modification, when the pattern formation region A is viewed in a plan view, a rectangular overlapping region 10 in which the semi-transmissive film 3 and the light-shielding film 5 are overlapped. A checkered pattern region 12 is formed in which the non-overlapping rectangular regions 11 in which the light-shielding film 5 is not overlapped with the semi-transmissive film 3 are alternately arranged. Moreover, in this modification, the area|region where the light-shielding film|membrane 5 does not overlap with the semi-transmissive film|membrane 3 is formed in the outer periphery of the checkered area|region 12. As shown in FIG. That is, in the pattern formation region A of this modification, (1) the overlapping region 10 stacked so that the pattern of the semi-transmissive film and the pattern of the light-shielding film overlap, and the light-shielding film 5 is overlapped with the semi-transmissive film 3 It has a mixed region including a non-overlapping region 11, and (2) a non-hybrid region formed on the outer edge of the mixed region and in which the light blocking film 5 is not overlapped with the semi-transmissive film 3 . . The first region D1 in the present modification is set so as to exist inside the checkered region 12 and also to include at least a rectangular overlapping region 10 located at the center of the pattern forming region A. . That is, the first region D1 may be a region including only the overlapping region 10 located in the center of the pattern forming region A, and the overlapping region 10 and the non-overlapping region 11 around it It may be an area including The second region D2 in the present modification is set in the outer region of the checkered pattern region 12, that is, in the non-overlapping region 11 formed at the outer edge of the pattern forming region A. As shown in FIG.

With this configuration, as shown in Fig. 8(b), since the light-shielding film 5 is present in the central portion of the pattern formation region A, as the area ratio of the light-shielding film 5 increases, the photoresist film ( 20), the intensity of the light irradiated to the central part is decreasing. In addition, since only the semi-transmissive film 3 exists at the outer edge of the pattern formation area A as if it surrounds the overlapping area 10, the photoresist film 20 goes outward from the center. The intensity of the light irradiated to it is increasing. As a result, as shown in Fig. 8(c), the photoresist film 20 after development has a shape in which the outer edge portion is gently inclined. That is, by using the photomask 1A of the present modification, the photoresist film 20 can be gently inclined from the center to the outside.

<Modification 2>

A further modified example of the pattern formation area A of the photomask 1A of Example 1 is demonstrated. Fig. 9(a) is a plan view showing the pattern formation region A in this modified example, and Fig. 9(b) is a light irradiated onto the photoresist film 20 through the photomask 1A of the present modified example. It is a diagram showing the intensity of light irradiated to the photoresist film 20 when It is a figure which shows the shape of the photoresist film 20 later.

As shown in Fig. 9(a) , in this modification, when the pattern formation region A is viewed in a plan view, in the central region 14 of the pattern formation region A, the semi-transmissive film 3 and An overlapping region 10 in which the light-shielding film 5 is overlapped is formed. In addition, in this modification, the overlapping region 10 in which the semi-transmissive film 3 and the light-shielding film 5 are overlapped, and a plurality of non-overlapping regions in which the light-shielding film 5 is not overlapped by the semi-transmissive film 3 . A region 15 having (11) is formed outside the central region (14). In the region 15 , the non-overlapping region 11 is formed to increase in area toward the outer edge. Moreover, on the outer periphery of the area|region 15, the area|region where the light-shielding film|membrane 5 does not overlap with the semi-transmissive film|membrane 3 is formed. The first region D1 in the present modification is set inside the central region 14 . The second region D2 in the present modification is set in the non-overlapping region 11 formed on the outer edge of the pattern formation region A. As shown in FIG.

With this configuration, as shown in FIG. 9(b) , the intensity of light irradiated to the outer edge portion of the photoresist film 20 is greater than the intensity of light irradiated to the central portion of the photoresist film 20 . has been Thereby, as shown in FIG.9(c), the photoresist film 20 after development can be made into the shape whose outer edge part is inclined gently. In other words, the photoresist film 20 may be gently inclined from the center to the outside.

<Modification 3>

A further modified example of the pattern formation area A of the photomask 1A of Example 1 is demonstrated. Fig. 10(a) is a plan view showing a pattern formation region A in this modified example, and Fig. 10(b) is a light irradiated onto the photoresist film 20 through the photomask 1A of this modified example. It is a diagram showing the intensity of light irradiated to the photoresist film 20 when It is a figure which shows the shape of the photoresist film 20 later.

As shown in Fig. 10(a) , in this modified example, when the pattern formation region A is viewed in a plan view, the central portion of the pattern formation region A includes the semi-transmissive film 3 and the light-shielding film 5 . The overlapping rectangular overlapping regions 10 and the rectangular non-overlapping regions 11 in which the light-shielding film 5 is not overlapped are alternately arranged. In addition, a region in which only the semi-transmissive film 3 exists is formed outside the region in which the rectangular overlapping regions 10 and the rectangular non-overlapping regions 11 are alternately arranged. Further, on the outer edge of the region where only the semi-transmissive film 3 exists, the light-shielding film 5 and a plurality of rectangular light-transmitting regions 16 in which the semi-transmissive film 3 does not exist are formed. The first region D1 in the present modification is set to be a region in which the overlapping regions 10 and the non-overlapping regions 11 are alternately arranged and at least a region including the overlapping region 10 in at least a part do. The second region D2 in the present modification is a region formed on the outer edge of the pattern formation region A, and is set to include the transmissive region 16 at least in part.

With this configuration, as shown in Fig. 10(b), the intensity of light irradiated to the photoresist film 20 is the smallest at the center of the photoresist film 20, and gradually increases from the center toward the outer edge. get bigger Accordingly, as shown in Fig. 10(c), the shape of the photoresist film 20 after development can be made into a shape that is gently inclined from the center toward the outer edge.

<Modification 4>

A further modified example of the pattern formation area A of the photomask 1A of Example 1 is demonstrated. Fig. 11(a) is a plan view showing a pattern formation region A in this modified example, and Fig. 11(b) is a light irradiated onto the photoresist film 20 through the photomask 1A of this modified example. It is a diagram showing the intensity of light irradiated to the photoresist film 20 when It is a figure which shows the shape of the photoresist film 20 later.

As shown in Fig. 11(a) , in this modification, when the pattern formation region A is viewed in a plan view, in the central region 17 of the pattern formation region A, the semi-transmissive film 3 and An overlapping region 10 in which the light-shielding film 5 is overlapped is formed. Moreover, in this modified example, the radial area|region 18 in which the overlapping area|region 10 radially extends from the center area|region 17 toward the outer edge part of the pattern formation area|region A is formed. The radial region 18 becomes narrower toward the outer edge of the pattern forming region A. As shown in FIG. The first region D1 in the present modification is set inside the central region 17 . The second region D2 in this modified example is a region of the outer edge of the pattern formation region A, and is set to include the non-overlapping region 11 at least in part. That is, the pattern formation region (A) of the present modification includes (1) a non-hybrid region composed of an overlap region in which the pattern of the semi-transmissive film and the pattern of the light-shielding film are stacked to overlap, and (2) formed at the outer edge of the non-hybrid region. Thus, it has a mixed region including a region in which the pattern of the semi-transmissive film and the pattern of the light-shielding film overlap each other and a non-overlapping region in which the light-shielding film 5 is not overlapped with the semi-transmissive film 3 .

With this configuration, as shown in Fig. 11(b), the intensity of light irradiated to the photoresist film 20 is the smallest at the center of the photoresist film 20, and gradually increases from the center toward the outer edge. get bigger As a result, as shown in Fig. 11(c) , the shape of the photoresist film 20 after development can be made to be gently inclined from the center toward the outer edge.

<Modification 5>

A further modified example of the pattern formation area A of the photomask 1A of Example 1 is demonstrated. Fig. 12(a) is a plan view showing the pattern formation region A in the present modification. Fig. 12(b) is a diagram showing the intensity of light irradiated to the photoresist film 20 when light is irradiated to the photoresist film 20 through the photomask 1A of the present modification. (c) is a diagram showing the shape of the photoresist film 20 after developing and exposing the photoresist film 20 through the photomask 1A of the present modification.

As shown in Fig. 12(a) , in this modification, when the pattern formation region A is viewed in a plan view, in the central region 70 of the pattern formation region A, the semi-transmissive film 3 and An overlapping region 10 in which the light-shielding film 5 is overlapped is formed. Moreover, in this modification, the spiral area|region 71 in which the overlapping area|region 10 extends spirally from the center area|region 70 toward the outer edge part of the pattern formation area|region A is formed. A non-overlapping region 11 is formed between the plurality of spiral regions 71 . In this specification, "extending in a spiral shape toward the outer edge" means "extending in a curved shape toward the outer edge". The radial region 18 may become narrower toward the outer edge of the pattern formation region A in some cases. The first region D1 in the present modification is set inside the central region 70 . The second region D2 in the present modification is a region of the outer edge of the pattern formation region A, and is set to include the non-overlapping region 11 at least in part.

With this configuration, as shown in Fig. 12(b), the intensity of light irradiated to the photoresist film 20 is the smallest at the center of the photoresist film 20, and gradually increases from the center toward the outer edge. get bigger Thereby, as shown in Fig. 12(c), the shape of the photoresist film 20 after development can be made to a shape that is gently inclined from the center toward the outer edge.

<Modification 6>

A further modified example of the pattern formation area A of the photomask 1A of Example 1 is demonstrated. Fig. 13(a) is a plan view showing the pattern formation region A in the present modification. 13(b) is a diagram showing the intensity of light irradiated to the photoresist film 20 when light is irradiated to the photoresist film 20 through the photomask 1A of the present modification. (c) is a diagram showing the shape of the photoresist film 20 after developing and exposing the photoresist film 20 through the photomask 1A of the present modification.

As shown in Fig. 13(a) , in the present modification, when the pattern formation region A is viewed in a plan view, in the central region 80 of the pattern formation region A, the semi-transmissive film 3 and An overlapping region 10 in which the light-shielding film 5 is overlapped is formed. Outside of the central region 80 , a plurality of overlapping regions 10 in which the semi-transmissive film 3 and the light-shielding film 5 are overlapped, and the light-shielding film 5 and the semi-transmissive film 3 are not present. A region 81 having a transmissive region 16 is formed. The area 81 is formed so that the area of the light-transmitting area 16 increases toward the outside of the pattern formation area A. As shown in FIG. Further, on the outer periphery of the region 81, the first transflective portion 82 is formed in a ring shape. In addition, the second transflective part 83 is formed in a ring shape on the outer periphery of the first transflective part 82 . The first transflective part 82 is designed to have a lower transmittance than the second transflective part 83 . The first region D1 in the present modification is set inside the central region 80 . The second region D2 in this modified example is set in the non-overlapping region 11 formed at the outer edge of the pattern formation region A. As shown in FIG.

With this configuration, as shown in Fig. 13(b), the intensity of light irradiated to the photoresist film 20 is the smallest at the center of the photoresist film 20, and gradually increases from the center toward the outer edge. get bigger As a result, as shown in Fig. 13(c), the shape of the photoresist film 20 after development can be made into a shape that is gently inclined from the center toward the outer edge.

<Modification 7>

A further modified example of the pattern formation area A of the photomask 1A of Example 1 is demonstrated. 14A is a plan view showing a pattern design formed in the pattern formation area A of the photomask 1A of the present modification, and FIG. 14B is a plan view cut in a plane perpendicular to the transparent substrate 2 , is a cross-sectional view of the photomask 1A of the present modification. Fig. 15(a) is a diagram showing the intensity of light irradiated to the photoresist film 20 when light is irradiated to the photoresist film 20 through the photomask 1A of the present modification. (b) is a diagram showing the shape of the photoresist film 20 after developing and exposing the photoresist film 20 through the photomask 1A of the present modification.

As shown in Fig. 14(a) , in the present modification, when the pattern formation region A is viewed in a plan view, in the central region 90 of the pattern formation region A, the semi-transmissive film 3 and An overlapping region 10 in which the light-shielding film 5 is overlapped is formed. On the outside of the central region 90 , the first transflective part 91 , the second transflective part 92 , the third transflective part 93 , and the fourth transflective part 94 are ring-shaped from the inside in this order. is formed The first semi-transmissive portion 91 , the second semi-transmissive portion 92 , the third semi-transmissive portion 93 , and the fourth semi-transmissive portion 94 are constituted of the semi-transmissive film 3 . As shown in FIG. 14(b) , the first transflective part 91 among the first transflective part 91 , the second transflective part 92 , the third transflective part 93 , and the fourth transflective part 94 . ) is the largest, and the film thickness of the second semi-transmissive portion 92 , the third semi-transmissive portion 93 , and the fourth semi-transmissive portion 94 is decreased in this order. Accordingly, the light transmittance of the first semi-transmissive portion 91 is the smallest, and the light transmittance of the second semi-transmissive portion 92 , the third semi-transmissive portion 93 , and the fourth semi-transmissive portion 94 is increased in that order. is made high

With this configuration, as shown in Fig. 15(a), the intensity of light irradiated to the photoresist film 20 is the smallest at the center of the photoresist film 20, and gradually increases from the center toward the outer edge. get bigger Thereby, as shown in Fig. 15(b), the shape of the photoresist film 20 after development can be made to a shape that is gently inclined from the center toward the outer edge.

As described above, in the photomask 1A of the present modification, the overlapping region 10 is stacked so that the pattern of the semi-transmissive film 3 and the pattern of the light-shielding film 5 overlap in the central portion of the pattern formation region A. Have. In addition, in the photomask 1A of the present modification, a plurality of semi-transmissive portions having different light transmittances (that is, the first semi-transmissive portion 91 , the second semi-transmissive portion 92 , the third semi-transmissive portion 93 , and the fourth The semi-transmissive portions 94) are formed toward the outer periphery of the pattern forming area A as if surrounding the overlapping area 10, and the plurality of semi-transmissive portions are formed toward the outer edge of the pattern forming area A. transmittance is increasing.

On the other hand, in the photomask 1A described above, the overlapping region 10 formed in the central region 90 of the pattern formation region A is circular, and the first transflective part 91 , the second transflective part 92 , Although the third transflective part 93 and the fourth transflective part 94 have a ring-shaped configuration, the configuration is not limited thereto. That is, the photomask 1A of the present modification has an overlapping region 10 in the central portion of the pattern formation region A, and the transmittance gradually toward the outer periphery of the pattern formation region A so as to surround the overlapping region 10 . What is necessary is just to form a some semi-transmissive part so that this may become high. For example, the overlapping region 10 and the plurality of transflective portions may be oval, rectangular, or the like.

In addition, in the photomask 1A described above, the first semi-transmissive portion 91 , the second semi-transmissive portion 92 , the third semi-transmissive portion 93 , and the fourth semi-transmissive portion 94 have the same transmittance. Although it was comprised by the transmission film 3, 1 A of photomasks of this modification are not limited to this structure. The first semi-transmissive portion 91, the second semi-transmissive portion 92, the third semi-transmissive portion 93, and the fourth semi-transmissive portion 94 are formed of semi-transmissive films having different light transmittances, thereby forming a pattern forming region ( It may be configured to increase the transmittance of light toward the outer periphery of A).

Next, the manufacturing method of the photomask 1A in this modification is demonstrated. 16 to 18 are diagrams for explaining a method of manufacturing the photomask 1A. As shown in Fig. 16, in the manufacture of the photomask 1B, first, a mask blank 50 in which a light-shielding film 5 is formed on the surface of the transparent substrate 2 is prepared (hereinafter, a first step ( R1)). Next, the light shielding film 5 formed on the mask blank 50 is patterned (hereinafter referred to as a second step R2). In the second step R2, patterning is performed so that the light-shielding film 5 has the shape of the overlapping region 10 (ie, a circular shape).

Next, a semi-transmissive film 3 is formed on the entire surface of the transparent substrate 2 including the light-shielding film 5 (hereinafter referred to as a third step R3). Thereafter, the semi-transmissive film 3 formed in the third step R3 is patterned (hereinafter referred to as the fourth step R4). In the fourth step R4 , patterning is performed so that the shape of the outer edge of the semi-transmissive film 3 becomes the shape of the outer edge of the first semi-transmissive portion 91 when the transparent substrate 2 is viewed in a plan view. Specifically, in the fourth step (R4), a photoresist film is formed on the surface of the semi-transmissive film 3, and the photoresist film is drawn with a drawing apparatus. After that, a photoresist pattern is formed by developing and exposing the photoresist film, and by etching the semi-transmissive film 3 using the photoresist pattern as a mask, a part of the semi-transmissive film is removed to form a pattern of the semi-transmissive film 3 . to form Thereafter, the remaining photoresist film is removed.

Next, as shown in FIG. 17 , a semi-transmissive film 3 is further formed on the entire surface of the transparent substrate 2 (hereinafter referred to as a fifth step R5). On the other hand, in Fig. 17, hatching different from that of the semi-permeable film 3 formed in the third step R3 is implemented for the semi-permeable film 3 formed in the fifth step for easy understanding. About this point, different hatching is performed similarly also about the following process. Thereafter, the semi-permeable film 3 formed in the fifth step R5 is patterned (hereinafter referred to as the sixth step R6). In the sixth step R6 , patterning is performed so that the shape of the outer edge of the semi-transmissive film 3 becomes the shape of the outer edge of the second semi-transmissive portion 92 when the transparent substrate 2 is viewed in a plan view. The specific method of the sixth step (R6) is the same as that of the fourth step (R4).

Next, a semi-transmissive film 3 is further formed on the entire surface of the transparent substrate 2 (hereinafter, referred to as a seventh step (R7)). Thereafter, the semi-transmissive film 3 formed in the seventh step (R7) is patterned (hereinafter referred to as the eighth step (R8)). In the eighth step R8 , patterning is performed so that the shape of the outer edge of the semi-transmissive film 3 becomes the shape of the outer edge of the third semi-transmissive portion 93 when the transparent substrate 2 is viewed in a plan view. The specific method of the eighth step (R8) is the same as that of the fourth step (R4).

Next, as shown in FIG. 18 , a semi-transmissive film 3 is further formed on the entire surface of the transparent substrate 2 (hereinafter, referred to as a ninth step (R9)). Thereafter, the semi-transmissive film 3 formed in the ninth step (R9) is patterned (hereinafter referred to as the tenth step (R10)). In the tenth step (R1)0, patterning is performed so that the shape of the outer edge of the semi-transmissive film 3 becomes the shape of the outer edge of the fourth semi-transmissive portion 94 when the transparent substrate 2 is viewed in a plan view. . The specific method of the tenth process (R10) is the same as that of the fourth process (R4). Through the above process, the film thickness of the photomask 1A shown in Fig. 14(b), that is, the first semi-transmissive portion 91 is the largest, and the second semi-transmissive portion 92 and the third semi-transmissive portion 93 have the largest film thickness. , the photomask 1A whose film thickness is decreasing in the order of the fourth semi-transmissive portion 94 can be manufactured.

Next, the film thickness of the semi-transmissive film 3 formed in the third step R3 , the fifth step R5 , the seventh step R7 , and the ninth step R9 will be described. In the setting of the film thickness, first, the film thickness of the semi-transmissive film 3 formed in the ninth step R9 is set so that the light transmittance of the fourth semi-transmissive portion 94 becomes a desired transmittance. Here, the transmittance|permeability in the area|region in which the semi-transmissive film|membrane was laminated|stacked in multiple layers is represented by following formula (1).

T=T ₀ ×exp(-4πkz/λ) ... (1)

In the formula (1), T is the transmittance, T ₀ is a value uniquely determined from the optical properties of the substrate glass (ie, the transparent substrate 2) and the semi-transmissive film, λ is the wavelength of exposure light, and k is the transflective film The extinction coefficient of the membrane, z, is the membrane thickness of the semipermeable membrane. As shown in the formula (1), when T ₀ , λ, and k are constant, the transmittance in a region in which a plurality of semi-permeable films are laminated is determined by the film thickness of the semi-permeable film. In the ninth step (R9), the thickness of the semi-transmissive film to be formed is set so that the transmittance calculated from the formula (1) becomes the transmittance of the fourth semi-transmissive portion 94 . On the other hand, since the fourth semi-permeable portion 94 is constituted by the one-layer semi-permeable film 3, λ in the above formula (1) is the amount of the semi-permeable film 3 formed in the ninth step (R9). becomes the film thickness. The transmittance of the fourth semi-transmissive portion 94 formed in the ninth step R9 serves as a standard for transmittance of the photomask 1A in this modified example.

Next, the light transmittance of the third semi-transmissive portion 93 determined by the film thickness of the sum of the film thicknesses of the semi-transmissive films 3 respectively formed in the seventh step (R7) and the ninth step (R9). The film thickness of the semi-transmissive film 3 formed in the seventh step R7 is set so as to achieve this desired transmittance. That is, in order to make the third semi-transmissive portion 93 a desired transmittance, the semi-transmissive film formed in advance in the seventh step R7 in consideration of the film thickness of the semi-transmissive film 3 formed in the ninth step R9 is taken into consideration. The film thickness of the film 3 is set. More specifically, using the above formula (1), the film thickness of the semi-permeable film 3 formed in the ninth step (R9) and the semi-transmissive film ( The film thickness of 3) is obtained, and the film thickness of the semi-permeable film 3 formed in the seventh step R7 is calculated from these film thicknesses, and the semi-permeable film 3 is formed in the seventh step R7. .

Next, the second semi-transmissive portion (R5), the seventh step (R7), and the ninth step (R9) determined by the total film thickness of the semi-transmissive film 3 formed into a film, respectively. The film thickness of the semi-transmissive film 3 formed in the fifth step R5 is set so that the transmittance of light in step 92) becomes the desired transmittance. In more detail, the film thickness of the semi-permeable film 3 formed in the seventh step (R7) and the ninth step (R9) and the second semi-permeable portion 92 are desired using the above formula (1). The film thickness of the semi-permeable film 3 serving as the transmittance is obtained, and from these film thicknesses, the film thickness of the semi-permeable film 3 formed in the fifth step R5 is calculated, and the semi-permeable film 3 is obtained in the fifth step R5. A film 3 is formed.

Finally, according to the film thickness of the sum of the film thicknesses of the semi-permeable films 3 formed in the third process R3, the fifth process R5, the seventh process R7, and the ninth process R9, respectively. The film thickness of the semi-transmissive film 3 formed in the third step R3 is set so that the predetermined light transmittance of the first semi-transmissive portion 91 becomes a desired transmittance. More specifically, the film thickness of the semi-permeable film 3 formed in the fifth step (R5), the seventh step (R7), and the ninth step (R9) using the formula (1), and the first The film thickness of the semi-transmissive film 3 at which the semi-transmissive portion 91 has the desired transmittance is obtained, and from these film thicknesses, the film thickness of the semi-permeable film 3 formed in the third step R3 is calculated, and the third In the step (R3), the semi-permeable film 3 is formed.

[Example 2]

Another embodiment of the present invention will be described below. On the other hand, for convenience of explanation, members having the same functions as those of the members described in the above embodiment are given the same reference numerals, and the description is not repeated.

Fig. 19(a) is a plan view showing a pattern design formed in the pattern formation area A of the photomask 1B in this embodiment, and Fig. 19(b) is a diagram showing the configuration of the photomask 1B. , and is a cross-sectional view of the photomask 1B cut in a plane perpendicular to the transparent substrate 2 . Although the photomask 1A in Example 1 was a bottom-type photomask, the photomask 1B in this Example is a top-type photomask.

The photomask 1B is semi-transparent on the transparent substrate 2 and the region where the transparent substrate 2, the light-shielding film 5, and the semi-transmissive film 3 are laminated in this order, as shown in Fig. 19(b). It has a structure provided with the area|region in which the transmission film|membrane 3 was laminated|stacked. On the other hand, the light-shielding film 5 and the semi-transmissive film 3 are not arranged in all regions of the transparent substrate 2, but are appropriately arranged in the pattern formation region A. In addition, the photomask 1B in an Example is not limited to having the pattern formation area|region A shown to Fig.19 (a), It has the pattern formation area|region A demonstrated with respect to the said modification 1-7, even if it is free

Similar to the photomask 1A, in the pattern formation region A in the photomask 1B, a circular light-shielding film 5 is located on the surface of the transparent substrate 2, and is the same as the center of the light-shielding film 5. A circular semi-transmissive film 3 having a diameter longer than that of the light-shielding film 5 is formed on the surface of the light-shielding film 5 and the upper surface of the transparent substrate 2 , centering on the position.

Accordingly, in the pattern formation region A of the photomask 1B, as shown in Fig. 19(a), the light-shielding film 5 and the semi-transmissive portion in the central portion including the center of the pattern formation region A An overlapping region 10 in which the films 3 are overlapped is formed in a circular shape. Further, in the pattern formation region A, a non-overlapping region 11 in which only the semi-transmissive film 3 is formed is formed so as to surround the overlapping region 10 . In other words, the non-overlapping region 11 is formed on the outer edge of the pattern formation region A. As shown in FIG.

According to this configuration, similarly to the photomask 1A in Example 1, the light transmittance is low in the central portion of the pattern formation region A, whereas in the outer edge portion of the pattern formation region A, the light transmittance is low. , the transmittance of light increases toward the outside of the pattern formation region A. In other words, a region of a predetermined area including the central portion of the pattern formation region A is referred to as a first region D1, and a region of a predetermined area at the outer edge of the pattern formation region A is referred to as a second region D2. ), the transmittance in the second region D2 is higher than the transmittance in the first region D1.

Next, the manufacturing method of the photomask 1B is demonstrated. 20-22 are figures for demonstrating the manufacturing method of the photomask 1B. As shown in Fig. 20, in the manufacture of the photomask 1B, first, a mask blank 50 in which a light-shielding film 5 is formed on the surface of the transparent substrate 2 is prepared (hereinafter, a first step ( Q1)). Next, a first photoresist film 60 is formed on the surface of the mask blank 50 (hereinafter referred to as a second process Q2). Thereafter, the first photoresist film 60 is drawn with a drawing apparatus to form a first photoresist pattern (hereinafter referred to as a third step (Q3)). In the third step (Q3), drawing is performed so that the first photoresist film 60 after development has the shape of the overlapping region 10 (ie, a circular shape) when the mask blank 50 is viewed in a plan view.

Next, the first photoresist film 60 is developed to remove the imaged region 60A in the first photoresist film 60 to form a first photoresist pattern (hereinafter, a fourth step ( Q4)). The third process Q3 and the fourth process Q4 are processes of forming the first photoresist pattern.

Next, as shown in Fig. 21, by etching the light blocking film 5 using the patterned first photoresist film 60 (that is, the first photoresist pattern) as a mask, a part of the light blocking film 5 is removed. A pattern of the light-shielding film 5 is formed (hereinafter referred to as a fifth step (Q5)). Next, the remaining first photoresist film 60 is removed (hereinafter referred to as a sixth step (Q6)).

Next, the semi-transmissive film 3 is formed on the entire surface of the photomask including the light-shielding film 5 (hereinafter referred to as a seventh step (Q7)). Thereafter, a second photoresist film 61 is formed on the surface of the semi-transmissive film 3 (hereinafter referred to as an eighth step (Q8)). Thereafter, as shown in Fig. 22, the second photoresist film 61 is drawn with a drawing apparatus (hereinafter referred to as a ninth step (Q9)). In the ninth step (Q9), drawing is performed so that the outer edge of the second photoresist film 61 has a ring shape when the photomask is viewed in a plan view.

Next, the second photoresist film 61 is developed to remove the drawn region 61A in the second photoresist film 61 to form a second photoresist pattern (hereinafter, a tenth step (Q10) ) is called). The ninth process Q9 and the tenth process Q10 are processes of forming the second photoresist pattern.

Next, using the patterned second photoresist film 61 (that is, the second photoresist pattern) as a mask, a part of the semi-transmissive film 3 is removed (hereinafter referred to as an eleventh step Q11). ). Finally, the remaining second photoresist film 61 is removed (hereinafter referred to as a twelfth step (Q12)).

Through the above process, the overlapping region 10 is formed in a circular shape in the central portion including the center of the pattern formation region A, and the pattern in which the non-overlapping region 11 is formed so as to surround the overlapping region 10 . A photomask 1B having a formation region can be manufactured.

<Modification 8>

The photomask described as any one of the above embodiments or modifications is the light blocking film 5 and the transmissive film 3, the transmittance difference according to the area ratio of the light blocking film 5 and the semi-transmissive film 3, etc. Although it was to use, the photomask of this invention is not limited to this, It is also possible to apply a phase shift film instead of the semitransmissive film 3 or in combination with the semitransmissive film 3 . Application of a phase shift film becomes possible by setting the area|region to which a phase effect is applied while adjusting the phase difference of the phase shift film with respect to the transparent substrate 2, and the transmittance|permeability of a phase shift film.

For example, in 1 A of photomasks shown to Fig.2 (a), the film thickness of a phase shift film is adjusted so that the phase difference with respect to the transparent substrate 2 may become 100 degrees or less, and the superimposition area|region 10 with a low transmittance|permeability. The exposure light of the exposure apparatus which arrange|positions a phase shift film between and the non-overlapping area|region 11 with high transmittance, and permeate|transmits the boundary vicinity of the overlapping area|region 10 and the non-overlapping area|region 11 is non-overlapping area by a phase effect (11) You may adjust so that it may shift to the side.

In addition, in the photomask 1A shown in Fig. 14A, a plurality of transflective portions (that is, the first semi-transmissive portion 91, the second semi-transmissive portion formed on the outer periphery of the overlapping region 10) having different transmittances of light. The transmissive portion 92 , the third semi-transmissive portion 93 , and the fourth semi-transmissive portion 94 ) include at least one or more adjacent semi-transmissive portions, and/or near the boundary of the adjacent semi-transmissive portions, the phase shift film It is free to form

Moreover, a pattern by the overlapping area|region 10 and the non-overlapping area|region 11 shown in FIG.8(a), FIG.9(a), FIG.10(a), FIG.11(a), FIG.12(a) etc. This photomask 1A formed WHEREIN: A phase shift film can also be formed in the boundary vicinity of the overlapping area|region 10 and the non-overlapping area|region 11.

As mentioned above, finer transmittance|permeability adjustment becomes possible by forming a phase shift film. As a result, it becomes possible to make the shape of the resist on the side of the transfer target substrate formed through the photomask of the present application into a more gentle inclined shape.

On the other hand, even in the case of applying a phase shift film, since the manufacturing method mentioned above can be applied by making the material of a phase shift film and the light shielding film 5 and/or the semitransmissive film 3 into a metal system of the same type, there is no problem in particular a phase A shift film can be employed.

Further, for example, in the photomask 1A of the first embodiment, the overlapping region 10 has a configuration in which the light-shielding film 5 and the semi-transmissive film 3 are overlapped, but instead of the light-shielding film 5, the phase shift A membrane may be applied. That is, what is necessary is just to set the area|region which forms a phase shift film to the area|region where the transmittance|permeability is lower than the non-overlapping area|region 11, in other words, the intensity|strength of the exposure light which transmits is small, In lamination|stacking of the semitransmissive film 3 and a phase shift film. It can be applied if the optical density (OD) value can satisfy 2.7 or more.

[Example 3]

In each of the above-described embodiments, the photomask in which the pattern formation region A has a circular shape has been described. However, the photomask of the present invention is not limited thereto, and the pattern formation region is adapted to the shape of each pixel of the display device. (A) can be made into a desired shape. This will be described with reference to FIG. 23 .

Fig. 23 is a plan view showing the pattern formation region A of the photomask 1C in the present embodiment. As shown in FIG. 23, the pattern formation area|region A of 1 C of photomasks has become a regular pentagon. In the pattern forming region A of the photomask 1C, an overlapping region 10 in which the light-shielding film 5 and the semi-transmissive film 3 are overlapped in a central portion including the center of the pattern forming region A is a regular pentagon. formed in the shape. Further, in the pattern formation region A, a non-overlapping region 11 in which only the semi-transmissive film 3 is formed is formed so as to surround the overlapping region 10 . The first region D1 in the present modification is set in the overlapping region 10 . The second region D2 in the present modification is set in the non-overlapping region 11 formed on the outer edge of the pattern formation region A. As shown in FIG.

According to this configuration, when exposure is performed through the photomask 1C, the intensity of light irradiated to the outer edge of the photoresist film 20 is higher than the intensity of light irradiated to the center of the photoresist film 20 . get bigger As a result, as shown in Fig. 3(b), the photoresist film 20 after development can have a shape in which the outer edge portion is gently inclined. In other words, the photoresist film 20 may be gently inclined from the center to the outside.

Meanwhile, in the present embodiment, the configuration in which the pattern formation region A is a regular pentagon has been described, but the photomask of the present invention is not limited thereto. In the photomask of one aspect of the present invention, the pattern formation region A may have a pentagonal shape other than a regular pentagon, or may have a polygonal shape other than a pentagon (eg, a triangle, a rectangle, a hexagon, etc.). Further, in the photomask of one aspect of the present invention, the pattern formation region A has a pair of opposing straight lines and two curves connecting both ends of the pair of opposing straight lines, It may be a shape formed by a straight line and the two curves. Moreover, in the photomask of one aspect|mode of this invention, while the pattern formation area|region A has a polygonal shape, at least one corner of a polygon may be a shape comprised by curves, such as an arc.

<Modification 9>

In the photomask of one embodiment of the present invention, the pattern forming region A may have an elliptical shape. This will be described with reference to FIG. 24 .

24 is a plan view showing the pattern formation area A of the photomask 1D in the present embodiment. As shown in FIG. 24, the pattern formation area A of the photomask 1D has an elliptical shape. In the pattern formation region A of the photomask 1D, an overlap region 10 in which the light-shielding film 5 and the semi-transmissive film 3 are overlapped in a central portion including the center of the pattern formation region A has an elliptical shape. is formed with Further, in the pattern formation region A, a non-overlapping region 11 in which only the semi-transmissive film 3 is formed is formed so as to surround the overlapping region 10 . The first region D1 in the present modification is set in the overlapping region 10 . The second region D2 in this modified example is set in the non-overlapping region 11 formed at the outer edge of the pattern formation region A. As shown in FIG.

With this configuration, in the photomask 1D, the intensity of light irradiated to the outer edge portion of the photoresist film 20 is greater than the intensity of light irradiated to the central portion of the photoresist film 20 . Thereby, similarly to the cross section shown in Fig. 3(b), the developed photoresist film 20 can have a shape in which the outer edge portion is gently inclined. In other words, the photoresist film 20 can be gently inclined from the center to the outside.

[Example 4]

In the above description, the configuration of forming a convex resist shape on the transfer target substrate by exposing the positive photoresist film through the photomask of the present invention has been described. It can also be used about a negative photoresist film. In this case, the shape of the resist to be formed is concave with respect to the transfer target substrate. The concave shape has a shape in which the outer edge portion is gently inclined. The configuration will be described in detail below.

Fig. 25 is a diagram showing the shape of the photoresist film 84 after developing and exposing the negative photoresist film 84 on the transfer target substrate through the photomask 1A described in the first embodiment. . As explained about Example 1, in the photomask 1A, the transmittance|permeability is low in the center part of pattern formation area|region A, and the transmittance|permeability is increasing as it goes outward from the center part. By exposing and developing the negative photoresist film 84 using the photomask 1A having the configuration, as shown in FIG. In the central part where the intensity is small, it is removed by development. In addition, since the intensity of the irradiated light increases from the central portion toward the outer edge portion, the solubility of the photoresist film 84 in the developer decreases and the remaining thickness of the photoresist film 84 increases. In other words, by using the photomask 1A for the negative photoresist film 84, the shape of the photoresist film 84 after development is made concave with respect to the transfer target substrate, and the light-shielding region and the light-transmitting area are used. The region between the regions may be formed in a gently inclined shape.

[Example 5]

In each of the above embodiments, the photomask in which the pattern formation region A is formed so that the intensity of light irradiated to the photoresist film 20 increases from the center toward the outside has been described. The photo mask is not limited thereto. The photomask of one embodiment of the present invention may have a configuration in which the pattern formation region A is formed so that the intensity of light irradiated to the photoresist film 20 decreases from the center toward the outside. This will be described with reference to FIG. 26 .

FIG. 26(a) is a view showing a pattern design formed in the pattern formation area A of the photomask 1E in this embodiment, and FIG. 26(b) is a plane perpendicular to the transparent substrate 2 It is sectional drawing of the cut|disconnected photomask 1E.

As shown in Fig. 26(a) , the pattern formation region A of the photomask 1E has a circular shape. In the pattern formation region A of the photomask 1E, a light-transmitting portion 85 for transmitting light is formed in a central portion including the center of the pattern formation region A in a circular shape. Further, as shown in Figs. 26(a) and 26(b), in the pattern formation region A, a non-overlapping region 11 in which only the semi-transmissive film 3 is formed so as to surround the light-transmitting portion 85 . is formed. Accordingly, a region of a predetermined area including the central portion of the pattern formation region A is referred to as a first region D1, and a region of a predetermined area at the outer edge of the pattern formation region A is referred to as a second region D2. ), the transmittance in the second region D2 is lower than the transmittance in the first region D1. In the region outside the pattern formation region A, an overlapping region 10 in which the light-shielding film 5, the etching stopper film 4, and the semi-transmissive film 3 are overlapped is formed, and serves as a light-shielding region.

In the photomask 1E having the above configuration, since the light transmitting portion 85 is present in the central portion of the pattern formation region A, the intensity of light irradiated to the central portion of the photoresist film 20 is increased. have. In addition, since the non-overlapping region 11 is formed so as to surround the transmissive portion 85, the intensity of light irradiated to the photoresist film 20 decreases from the center toward the outside.

Fig. 27 is a diagram showing the shape of the photoresist film 20 after exposure and development of the positive photoresist film 20 on the transfer target substrate through the photomask 1E. As shown in Fig. 27, by exposing and developing the positive photoresist film 20 on the transfer target substrate through the photomask 1E, the developed photoresist film 20 is formed of the irradiated light. In the central part where the intensity is large, it is removed by development. Further, since the intensity of the irradiated light decreases from the central portion toward the outer edge portion, the thickness of the remaining photoresist film 20 increases. In other words, by using the photomask 1E for the positive photoresist film 20, the shape of the photoresist film 20 after development is made concave with respect to the transfer target substrate, and the light-shielding region and the light-transmitting area are used. The region between the regions may be formed in a gently inclined shape.

Fig. 28 is a diagram showing the shape of the photoresist film 84 after exposure and development of the negative photoresist film 84 on the transfer target substrate through the photomask 1E. As shown in Fig. 28, the negative photoresist film 84 on the transfer target substrate is exposed through a photomask 1E and developed, so that the developed photoresist film 84 has a smooth outer edge. It can be made into a sharply inclined shape. In other words, the photoresist film 84 can be gently inclined from the center to the outside.

Next, the manufacturing method of the photomask 1E is demonstrated. 29-31 is a figure for demonstrating the manufacturing method of the photomask 1E. As shown in FIG. 29 , in the manufacture of the photomask 1A, first, the semi-transmissive film 3 , the etching stopper film 4 , and the light-shielding film 5 are formed on the surface of the transparent substrate 2 . The mask blanks 30 stacked and formed in this order are prepared (hereinafter, referred to as a first step (S1)).

Next, a first photoresist film 40 is formed on the surface of the mask blank 30 (hereinafter referred to as a second step S2). Thereafter, the first photoresist film 40 is drawn with a drawing apparatus (hereinafter referred to as a third step (S3)). In 3rd process S3, when the mask blank 30 is planarly viewed, writing is performed so that the 1st photoresist film 40 in the area|region corresponding to the pattern formation area|region A may be removed by development.

Next, the first photoresist film 40 is developed to remove the drawn region 40A in the first photoresist film 40 to form a first photoresist pattern (hereinafter, a fourth step ( S4)). The third process ( S3 ) and the fourth process ( S4 ) are processes of forming the first photoresist pattern.

Next, as shown in Fig. 30, the pattern of the light-shielding film 5 is formed by etching the light-shielding film 5 using the patterned first photoresist film 40 (that is, the first photoresist pattern) as a mask. formed (hereinafter, referred to as a fifth step (S5)). In the fifth step ( S5 ), by using a solvent that does not dissolve the etching stopper film 4 as a solvent for etching the light-shielding film 5 , only the light-shielding film 5 is etched and removed.

Next, the etching stopper film 4 is removed using the first photoresist pattern and the light shielding film 5 as masks (hereinafter referred to as a sixth step (S6)). Thereafter, the remaining first photoresist film 40 is removed (hereinafter referred to as a seventh step (S7)).

Next, a second photoresist film 41 is formed on the entire surface of the photomask including the light-shielding film 5 (hereinafter referred to as an eighth step (S8)).

Next, as shown in FIG. 31 , the second photoresist film 41 is drawn with a drawing apparatus (hereinafter referred to as a ninth step (S9)). In the ninth step (S9), drawing is performed so that only the second photoresist film 41 in the region corresponding to the overlapping region 10 and the non-overlapping region 11 remains after development when the photomask is viewed in a plan view. . At this time, it is also important to reflect the margin in consideration of the positional shift of the pattern due to the alignment shift of the drawing device in advance to the design pattern, and to minimize the influence of the pattern position shift.

Next, the second photoresist film 41 is developed to remove the drawn region 41A in the second photoresist film 41 to form a second photoresist pattern (hereinafter, a tenth step ( S10)). The eighth step (S8), the ninth step (S9), and the tenth step (S10) are steps of forming the second photoresist pattern.

Next, the pattern of the semi-transmissive film 3 is formed by etching the semi-transmissive film 3 using the patterned second photoresist film 41 (that is, the second photo resist pattern) as a mask (hereinafter referred to as the semi-transmissive film 3). , referred to as an eleventh step (S11)). Finally, the remaining second photoresist film 41 is removed (hereinafter referred to as a twelfth step (S12)).

Through the above process, the light transmitting portion 85 is formed in a circular shape in the central portion including the center of the pattern forming area A, and the non-overlapping area 11 is formed so as to surround the light transmitting portion 85. A photomask 1E having the region A can be manufactured.

[Example 6]

In Example 5, a bottom-type photomask 1E having a light transmitting area in the center of the pattern formation area A and a non-overlapping area surrounding the light transmitting area has been described has been described. The photo mask is not limited thereto. The photomask of one aspect of the present invention may be a top-shaped photomask having a transmissive region in the center of the pattern formation region A, and in which a non-overlapping region is formed to surround the transmissive region. This will be described in detail below.

Fig. 32(a) is a view showing a pattern design formed in the pattern formation area A of the photomask 1F in this embodiment, and Fig. 32(b) is a plane perpendicular to the transparent substrate 2 It is sectional drawing of the cut|disconnected photomask 1F.

As shown in Fig. 32(a) , in the pattern forming region A of the photomask 1F, a light transmitting portion 85 that transmits light is circled in a central portion including the center of the pattern forming region A. formed in the shape. Moreover, as shown in FIGS. 32(a) and 32(b), in the pattern formation area A, the non-overlapping area 11 in which only the semi-transmissive film 3 is formed so as to surround the light-transmitting part 85. is formed. Moreover, on the outside of the pattern formation region A, an overlapping region 10 in which the light-shielding film 5 and the semi-transmissive film 3 are overlapped so as to surround the non-overlapping region 11 is formed.

According to this configuration, similarly to the photomask 1E in Example 5, the light transmittance is high in the central portion of the pattern formation region A, whereas in the outer edge portion of the pattern formation region A, The transmittance of light decreases as the pattern formation area A goes outward. In other words, a region of a predetermined area including the central portion of the pattern formation region A is referred to as a first region D1, and a region of a predetermined area at the outer edge of the pattern formation region A is referred to as a second region D2. ), the transmittance in the second region D2 is lower than the transmittance in the first region D1.

Next, the manufacturing method of the photomask 1F is demonstrated. 33-35 is a figure for demonstrating the manufacturing method of the photomask 1F. As shown in Fig. 33, in the manufacture of the photomask 1B, first, a mask blank 50 in which a light-shielding film 5 is formed on the surface of the transparent substrate 2 is prepared (hereinafter, a first step T1). ) is called). Next, a first photoresist film 60 is formed on the surface of the mask blank 50 (hereinafter referred to as a second step T2). Thereafter, the first photoresist film 60 is drawn with a drawing apparatus to form a first photoresist pattern (hereinafter referred to as a third step (T3)). In the 3rd process T3, drawing is performed so that the 1st photoresist film 60 in the area|region corresponding to the pattern formation area|region A may be removed by development when the mask blank 50 is planarly viewed.

Next, the first photoresist film 60 is developed to remove the region 60A written in the first photoresist film 60 to form a first photoresist pattern (hereinafter, a fourth step). (T4)). The third process T3 and the fourth process T4 are processes of forming the first photoresist pattern.

Next, as shown in FIG. 34 , a part of the light-shielding film 5 is removed by etching the light-shielding film 5 using the patterned first photoresist film 60 (that is, the first photoresist pattern) as a mask. This is removed to form a pattern of the light-shielding film 5 (hereinafter referred to as a fifth step (T5)). Next, the remaining first photoresist film 60 is removed (hereinafter referred to as a sixth step (T6)).

Next, the semi-transmissive film 3 is formed on the entire surface of the photomask including the light-shielding film 5 (hereinafter referred to as a seventh step (T7)). Thereafter, a second photoresist film 61 is formed on the surface of the semi-transmissive film 3 (hereinafter referred to as an eighth step (T8)). Thereafter, as shown in Fig. 35, the second photoresist film 61 is drawn with a drawing apparatus (hereinafter referred to as a ninth step (T9)). At this time, it is also important to reflect the margin in consideration of the positional shift of the pattern due to the alignment shift of the drawing apparatus in advance to the design pattern, and to minimize the influence of the pattern position shift. In the ninth process T9, drawing is performed so that only the 2nd photoresist film 61 in the area|region corresponding to the overlapping area|region 10 and the non-overlapping area|region 11 remains when the photomask is planarly viewed.

Next, the second photoresist film 61 is developed to remove the drawn region 61A in the second photoresist film 61 to form a second photoresist pattern (hereinafter, a tenth step ( T10)). The ninth process ( T9 ) and the tenth process ( T10 ) are processes of forming the second photoresist pattern.

Next, a part of the semi-transmissive film 3 is removed using the patterned second photoresist film 61 (that is, the second photoresist pattern) as a mask (hereinafter referred to as an eleventh step T11). ). Finally, the remaining second photoresist film 61 is removed (hereinafter referred to as a twelfth step (T12)).

Through the above process, the light transmitting portion 85 is formed in a circular shape in the central portion including the center of the pattern forming region A, and the non-overlapping region 11 is formed so as to surround the overlapping region 10. A photomask 1F having the region A can be manufactured.

<Modification 10>

A modified example of the pattern formation area A of the photomask 1F of Example 6 is demonstrated. Fig. 36 is a plan view showing the pattern formation region A in the present modification. As shown in FIG. 36 , in the present modification, when the pattern formation region A is viewed in a plan view, a rectangular light-transmitting portion 85 in which the semi-transmissive film 3 and the light-shielding film 5 do not exist; A checkered pattern region 12 in which rectangular non-overlapping regions 11 in which the light-shielding film 5 is not overlapped is alternately arranged on the semi-transmissive film 3 is formed. Moreover, in this modification, the area|region where the light-shielding film|membrane 5 does not overlap with the semi-transmissive film|membrane 3 is formed in the outer periphery of the checkered area|region 12. As shown in FIG. That is, the pattern formation region A of the present modification includes (1) the transmissive portion 85 in which the semi-transmissive film 3 and the light-shielding film 5 are not present, and the light-shielding film 5 in the semi-transmissive film 3 . A mixed region including the non-overlapping non-overlapping region 11 , and (2) a non-hybrid region formed at the outer edge of the mixed region and in which the light blocking film 5 is not overlapped with the semi-transmissive film 3 . has a The first region D1 in this modified example is present inside the checkered pattern region 12 and includes at least a rectangular light-transmitting portion 85 located in the center of the pattern forming region A. is set That is, the first region D1 may be a region including only the light-transmitting portion 85 located in the central portion of the pattern formation area A, and the light-transmitting portion 85 and the surrounding non-overlapping area 11 may be formed. The area may be included. The second region D2 in the present modification is set in the region outside the checkered pattern region 12, that is, in the non-overlapping region 11 formed at the outer edge of the pattern formation region A. As shown in FIG.

Due to the configuration, since the light-transmitting portion 85 is present in the central portion of the pattern formation region A, the area ratio of the light-transmitting portion 85 increases as the light irradiated to the central portion of the photoresist film 20 increases. intensity is increasing. In addition, since only the semi-transmissive film 3 exists at the outer edge of the pattern formation area A as if it surrounds the checkered pattern area 12, the photoresist film 20 goes from the center to the outside. ), the intensity of the light irradiated to it is decreasing. Accordingly, the photoresist film 20 after development has a shape in which the outer edge portion is gently inclined. That is, by using the photomask of the present modification, the photoresist film 20 can be gently inclined from the center to the outside.

<Modification 11>

A further modified example of the pattern formation area A of the photomask 1F of Example 6 is demonstrated. Fig. 37 is a plan view showing the pattern formation area A in the present modification. As shown in FIG. 37 , in the present modification, when the pattern formation region A is viewed in a plan view, in the central region 14 of the pattern formation region A, the semi-transmissive film 3 and the light-shielding film 5 are ) in which the light-transmitting portion 85 does not exist is formed. In addition, in the present modification, the transmissive portion 85 in which the semi-transmissive film 3 and the light-shielding film 5 are not present, and a plurality of non-overlapping portions in which the light-shielding film 5 is not superposed on the semi-transmissive film 3 . A region 15 having a region 11 is formed outside the central region 14 . In the region 15 , the non-overlapping region 11 is formed to increase in area toward the outer edge. Moreover, on the outer periphery of the area|region 15, the area|region where the light-shielding film|membrane 5 does not overlap with the semi-transmissive film|membrane 3 is formed. The first region D1 in the present modification is set inside the central region 14 . The second region D2 in the present modification is set in the region outside the region 15, that is, in the non-overlapping region 11 formed at the outer edge of the pattern forming region A. As shown in FIG.

With this configuration, since the light transmitting portion 85 is formed in the central region 14 , the intensity of light irradiated to the central portion of the photoresist film 20 is increased. Further, as the area ratio of the non-overlapping region 11 increases as it goes outward from the central region 14, the intensity of light irradiated to the photoresist film 20 decreases. Thereby, the photoresist film 20 after development can be made into the shape where the outer edge part is inclined gently. In other words, the photoresist film 20 may be gently inclined from the center to the outside.

<Modification 12>

A further modified example of the pattern formation area A of the photomask 1F of Example 6 is demonstrated. Fig. 38 is a plan view showing the pattern formation region A in the present modification. As shown in Fig. 38, in this modification, when the pattern formation area A is viewed in a plan view, the central portion of the pattern formation area A is a rectangle in which the semi-transmissive film 3 and the light-shielding film 5 do not exist. The light-transmitting portion 85 and the non-overlapping rectangular region 11 in which the light-shielding film 5 is not overlapped with the semi-transmissive film 3 are alternately arranged. In addition, a region in which only the semi-transmissive film 3 exists is formed outside the region in which the rectangular non-overlapping regions 11 are alternately arranged in the rectangular light-transmitting portion 85 . Furthermore, a plurality of rectangular overlapping regions 86 in which the light-shielding film 5 and the semi-transmissive film 3 are overlapped are formed on the outer edge of the region where only the semi-transmissive film 3 exists. The first area D1 in the present modification is set to be a region in which the light transmitting portion 85 and the non-overlapping area 11 are alternately arranged and at least a region including the light transmitting portion 85 at least in part. . The second region D2 in the present modification is a region formed on the outer edge of the pattern formation region A, and is set to include the overlapping region 86 at least in part.

According to this configuration, the light-transmitting portion 85 and the non-overlapping region 11 are alternately arranged in the central portion of the pattern formation area A, and the semi-transmissive film 3 is disposed on the outer edge of the pattern formation area A. Since the region in which the bay is formed, the intensity of light irradiated to the photoresist film 20 is greatest at the center of the photoresist film 20 and gradually decreases from the center toward the outer edge. Thereby, the shape of the photoresist film 20 after development can be made into the shape which inclines gently from the center toward the outer edge part.

<Modification 13>

A further modified example of the pattern formation area A of the photomask 1F of Example 6 is demonstrated. Fig. 39 is a plan view showing the pattern formation area A in the present modification. As shown in FIG. 39 , in the present modification, when the pattern formation region A is viewed in a plan view, in the central region 17 of the pattern formation region A, the semi-transmissive film 3 and the light-shielding film 5 are ) in which the light-transmitting portion 85 does not exist is formed. Moreover, in this modification, the radial area|region 87 in which the light-transmitting part 85 radially extends from the center area|region 17 toward the outer edge part of the pattern formation area|region A is formed. The radial region 87 becomes narrower toward the outer edge of the pattern forming region A. As shown in FIG. The first region D1 in the present modification is set inside the central region 17 . The second region D2 in the present modification is a region of the outer edge of the pattern formation region A, and is set to include the non-overlapping region 11 at least in part. That is, the pattern formation region A of the present modification includes (1) a non-mixed region (transmissive portion 85) in which the semi-transmissive film 3 and the light-shielding film 5 do not exist, and (2) the non-mixed region. A mixed region that is formed on the outer edge of , and includes a region in which the semi-transmissive film 3 and the light-shielding film 5 do not exist, and a non-overlapping region in which the light-shielding film 5 is not overlapped with the semi-transmissive film 3 . (78).

According to this configuration, the light transmitting portion 85 is formed in the central region 17 of the pattern forming area A, and the light transmitting portion 85 is formed from the central area 17 toward the outer edge of the pattern forming area A. Since is extended radially, the intensity of light irradiated to the photoresist film 20 is greatest at the center of the photoresist film 20 and gradually decreases from the center toward the outer edge. Thereby, the shape of the photoresist film 20 after development can be made into the shape which inclines gently from the center toward the outer edge part.

<Modification 14>

A further modified example of the pattern formation area A of the photomask 1F of Example 6 is demonstrated. Fig. 40 is a plan view showing the pattern formation region A in the present modification. As shown in Fig. 40, in the present modification, when the pattern formation region A is viewed in plan, in the central region 88 of the pattern formation region A, the semi-transmissive film 3 and the light-shielding film 5 are The non-existent light-transmitting portion 85 is formed. Moreover, in this modification, the spiral area|region 89 in which the light-transmitting part extends spirally from the center area|region 88 toward the outer edge part of the pattern formation area|region A is formed. A non-overlapping region 11 is formed between the plurality of spiral regions 89 . The spiral region 89 may become narrower in width toward the outer edge of the pattern forming region A. The first region D1 in the present modification is set inside the central region 88 . The second region D2 in the present modification is a region of the outer edge of the pattern formation region A, and is set to include the non-overlapping region 11 at least in part.

With this configuration, the light-transmitting portion 85 is formed in the central region 88 of the pattern-forming region A, and a projection extending from the central region 88 toward the outer edge of the pattern-forming region A in a spiral shape. Since the light portion 85 is formed, the intensity of light irradiated to the photoresist film 20 is greatest at the center of the photoresist film 20 and gradually decreases from the center toward the outer edge. Thereby, the shape of the photoresist film 20 after development can be made into the shape which inclines gently from the center toward the outer edge part.

<Modification 15>

A further modified example of the pattern formation area A of the photomask 1F of Example 6 is demonstrated. Fig. 41 is a plan view showing the pattern formation region A in the present modification. As shown in FIG. 41 , in this modified example, when the pattern formation region A is viewed in a plan view, in the central region 102 of the pattern formation region A, the semi-transmissive film 3 and the light-shielding film 5 are ) in which the light-transmitting portion 85 does not exist is formed. Outside of the central region 102 , a plurality of overlapping regions 10 in which the semi-transmissive film 3 and the light-shielding film 5 are overlapped, and the light-shielding film 5 and the semi-transmissive film 3 are not present. A region 103 having a light-transmitting portion 85 is formed. The region 103 is formed so that the area of the overlapping region 10 increases toward the outside of the pattern formation region A. As shown in FIG. Moreover, on the outer periphery of the area|region 103, the 1st semi-transmissive part 100 is formed in the ring shape. In addition, the second semi-transmissive portion 101 is formed in a ring shape on the outer periphery of the first semi-transmissive portion 100 . The first transflective part 100 is designed to have a higher transmittance than the second transflective part 101 . The first region D1 in the present modification is set inside the central region 102 . The second region D2 in the present modification is set in the non-overlapping region 11 formed at the outer edge of the pattern formation region A. As shown in FIG.

With this configuration, the light transmitting portion 85 is formed in the central region 102 of the pattern formation region A, and the region having the overlapping region 10 and the light transmitting portion 85 outside the central region 102 . Since 103 is formed and the first semi-transmissive portion 100 is formed on the outer periphery of the region 103 , the intensity of light irradiated to the photoresist film 20 is at the center of the photoresist film 20 . It is the largest in , and gradually decreases from the center toward the outer edge. Thereby, the shape of the photoresist film 20 after development can be made into the shape which inclines gently from the center toward the outer edge part.

<Modification 16>

A further modified example of the pattern formation area A of the photomask 1F of Example 6 is demonstrated. Fig. 42 is a plan view showing a pattern design formed in the pattern formation area A of the photomask of the present modification. As shown in FIG. 42 , in this modified example, when the pattern formation region A is viewed in a plan view, in the central region 110 of the pattern formation region A, the semi-transmissive film 3 and the light-shielding film 5 are ) in which the light-transmitting portion 85 does not exist is formed. Outside of the central region 11 0 , the first semi-transmissive portion 111 , the second semi-transmissive portion 112 , the third semi-transmissive portion 113 , and the fourth semi-transmissive portion 114 are ring from the inside in this order. formed in the shape. The first semi-transmissive portion 111 , the second semi-transmissive portion 112 , the third semi-transmissive portion 113 , and the fourth semi-transmissive portion 114 are constituted of the semi-transmissive film 3 . Among the first transflective part 111 , the second transflective part 112 , the third transflective part 113 , and the fourth transflective part 114 , the first transflective part 111 has the smallest thickness, and the second half The film thickness of the transmissive portion 112 , the third semi-transmissive portion 113 , and the fourth semi-transmissive portion 114 increases in this order. Accordingly, the light transmittance of the first semi-transmissive portion 111 is the largest, and the light transmittance of the second semi-transmissive portion 112 , the third semi-transmissive portion 113 , and the fourth semi-transmissive portion 114 is the highest. is getting lower

Due to this configuration, since the film thickness of the semi-transmissive film increases from the center to the outside with respect to the pattern formation region A, the intensity of light irradiated to the photoresist film 20 is ) is largest at the center, and gradually decreases from the center toward the outer edge. Thereby, the shape of the photoresist film 20 after development can be made into the shape which inclines gently from the center toward the outer edge part.

As described above, the photomask of the present modification includes the transmissive portion 85 in which the semi-transmissive film 3 and the light-shielding film 5 are not present in the central portion of the pattern formation region A. As shown in FIG. In addition, in the photomask of this modification, a plurality of transflective portions having different light transmittances (that is, the first semi-transmissive portion 91 , the second semi-transmissive portion 92 , the third semi-transmissive portion 93 , and the fourth semi-transmissive portion (94)) is formed toward the outer periphery of the pattern forming area (A) as if it surrounds the light transmitting portion (85), and the plurality of semi-transmissive portions are formed toward the outer edge of the pattern forming area (A). The transmittance is decreasing.

On the other hand, in the photomask 1A described above, the overlapping region 10 formed in the central region 11 0 of the pattern formation region A is circular, and the first semi-transmissive portion 111 and the second semi-transmissive portion 112 are circular. ), the third transflective part 113 , and the fourth transflective part 114 have a ring-shaped configuration, but are not limited thereto. That is, the photomask of the present modification has the light-transmitting portion 85 in the central portion of the pattern formation area A, and the transmittance gradually increases toward the outer periphery of the pattern formation area A as if surrounding the light-transmitting portion 85 . It is sufficient that a plurality of semi-transmissive portions are formed so as to For example, the light-transmitting portion 85 and the plurality of semi-transmissive portions may have an elliptical shape, a rectangular shape, or the like.

The present invention is not limited to each of the above-described embodiments, and various modifications are possible within the scope indicated in the claims, and the embodiments obtained by appropriately combining the technical means disclosed in the other embodiments are also within the technical scope of the present invention. Included.

1A to 1 F: photo mask
2: Transparent substrate
3: semi-permeable membrane
4: Etching stopper film
5: shading screen
7, 85: light-transmitting part
10, 86, 103: overlapping area
11: Non-overlapping areas
12: checkered area
14, 17, 70, 80, 88, 90, 102, 110: central area
16: light transmitting area
20, 84: photoresist film
30, 50: mask blank
40, 60: first photoresist film
41, 61: second photoresist film
A: pattern forming area
D1: first area
D2: second area

Claims (19)

It has a plurality of pattern forming regions having a predetermined shape including at least two regions having different transmittances from each other on the transparent substrate,
A region of a predetermined area including the central portion of the pattern formation region is called a first region, and a region of a predetermined area at the outer edge of the pattern formation region is called a second region,
A photomask, wherein the transmittance in the second region is higher or lower than the transmittance in the first region. The method of claim 1,
The second region is formed concentrically with respect to the first region. The method of claim 1,
The photomask of claim 1, wherein at least a portion of an outer edge shape of the pattern formation region in a plan view includes an arc. The method of claim 1,
The pattern forming region has a polygonal shape, a photomask. 5. The method according to any one of claims 1 to 4,
The pattern formation region is formed by laminating at least a pattern of a semi-transmissive film and a pattern of a light-shielding film to partially overlap,
has a light-transmitting portion on the transparent substrate in which the pattern formation region is not formed;
A photomask having a transmittance in the second region higher than a transmittance in the first region. 6. The method of claim 5,
When the pattern formation region is viewed in a plan view, an overlapping region in which the semi-transmissive film and the light-shielding film overlap each other extends radially or spirally from a center portion of the pattern formation region toward an outer edge portion. 6. The method of claim 5,
When the pattern formation region is viewed in a plan view, it has a plurality of non-overlapping regions having a predetermined shape in which the light-shielding film is not overlapped on the semi-transmissive film,
The non-overlapping region is formed to increase in area toward the outer edge portion. 6. The method of claim 5,
When the pattern formation region is viewed in a plan view, a rectangular overlapping region in which the semi-transmissive film and the light-shielding film overlap and a rectangular non-overlapping region in which the light-shielding film is not overlapped on the semi-transmissive film are alternately arranged A photomask comprising: a checkered pattern region having a lattice pattern formed thereon; and a region in which the light-shielding film is not overlapped with the semi-transmissive film is formed on an outer periphery of the checkered pattern region. 6. The method of claim 5,
A photomask according to claim 1, wherein a light-transmitting portion in which the light-shielding film and the semi-transmissive film do not exist is formed at an outer edge of the pattern formation region when the pattern formation region is viewed in a plan view. 5. The method according to any one of claims 1 to 4,
The pattern formation region includes at least a translucent portion and a semi-transmissive portion formed by a semi-transmissive film,
In a region where the pattern formation region is not formed, a light blocking portion formed by laminating the semi-transmissive film and the light blocking film is formed on the transparent substrate,
A photomask, wherein the transmittance in the second region is lower than the transmittance in the first region. 11. The method of claim 10,
When the pattern formation region is viewed in a plan view, the light-transmitting portion in which the light-shielding film and the semi-transmissive film do not exist extends radially or spirally from a center portion of the pattern formation region toward an outer edge portion. 11. The method of claim 10,
When the pattern formation region is viewed in a plan view, it has a plurality of non-overlapping regions having a predetermined shape in which the light-shielding film is not overlapped on the semi-transmissive film,
The non-overlapping region is formed to increase in area toward the outer edge portion. 11. The method of claim 10,
When the pattern formation region is viewed in a plan view, a light-transmitting portion in which the light-shielding film and the semi-transmissive film do not exist, and a rectangular non-overlapping region in which the light-shielding film is not overlapped on the semi-transmissive film are alternately arranged. A patterned region is formed, and the non-overlapping region is formed on an outer periphery of the checkered region. 11. The method of claim 10,
When the pattern formation region is viewed in a plan view, an overlapping region in which the semi-transmissive film and the light-shielding film overlap is formed at an outer edge of the pattern formation region. a transflective region formed of a transflective film on a transparent substrate; and a laminate region in which at least the transflective film and the light-shielding film are stacked on the transparent substrate such that the transflective film is located on the side of the transparent substrate rather than the light-shielding film; A method of manufacturing a photomask having a transparent region to which a substrate is exposed, comprising:
preparing a mask blank formed by laminating at least the semi-transmissive film and the light-shielding film on the surface of the transparent substrate so that the semi-transmissive film is positioned on the transparent substrate side than the light-shielding film;
forming a first photoresist film on the surface of the mask blank, and drawing the first photoresist film with respect to the first photoresist film with a writing device to form a first photoresist pattern;
removing a part of the light-shielding film using the first photoresist pattern as a mask;
removing the exposed semi-permeable membrane;
forming a second photoresist film on the entire surface of the photomask including the light-shielding film, and writing the second photoresist film with a writing device to form the second photoresist pattern;
and removing a portion of the light blocking film using the second photoresist pattern as a mask,
When a region of a predetermined area including a central portion of the pattern formation region formed by the light-shielding film and the semi-transmissive film is referred to as a first region, and a region of a predetermined area in the outer periphery of the pattern formation region is referred to as a second region, and forming the pattern forming region so that the transmittance in the second region is higher than the transmittance in the first region. A method for manufacturing a photomask comprising: a transflective region on a transparent substrate by a transflective film; a laminate region in which a light blocking film and the transflective film are stacked in this order on the transparent substrate; As,
A step of preparing a mask blank in which a light-shielding film is formed on the surface of the transparent substrate;
forming a first photoresist film on the surface of the mask blank;
a step of forming a first photoresist pattern by drawing on the first photoresist film with a drawing device;
removing a portion of the light-shielding film using the first photoresist pattern as a mask;
forming a semi-transmissive film on the entire surface of the photomask including the light-shielding film;
forming a second photoresist film on the surface of the semi-transmissive film;
a step of forming a second photoresist pattern by drawing on the second photoresist film with a drawing device;
and removing a portion of the semi-transmissive layer using the second photoresist pattern as a mask,
When a region of a predetermined area including a central portion of the pattern formation region formed by the light-shielding film and the semi-transmissive film is referred to as a first region, and a region of a predetermined area in the outer periphery of the pattern formation region is referred to as a second region, and forming the pattern forming region so that the transmittance in the second region is higher than the transmittance in the first region. a transflective region formed of a transflective film on a transparent substrate; and a laminate region in which at least the transflective film and the light-shielding film are stacked on the transparent substrate such that the transflective film is located on the side of the transparent substrate rather than the light-shielding film; A method of manufacturing a photomask having a transparent region to which a substrate is exposed, comprising:
preparing a mask blank formed by laminating at least the semi-transmissive film and the light-shielding film on the surface of the transparent substrate so that the semi-transmissive film is positioned on the transparent substrate side than the light-shielding film;
forming a first photoresist film on the surface of the mask blank, and drawing the first photoresist film with respect to the first photoresist film with a writing device to form a first photoresist pattern;
removing a portion of the light-shielding film using the first photoresist pattern as a mask;
removing the exposed semi-permeable membrane;
forming a second photoresist film on the entire surface of the photomask including the light-shielding film, and drawing the second photoresist film with a writing device to form a second photoresist pattern;
and removing a portion of the semi-transmissive layer using the second photoresist pattern as a mask,
When a region of a predetermined area including a central portion of the pattern formation region formed by the light-shielding film and the semi-transmissive film is referred to as a first region, and a region of a predetermined area in the outer periphery of the pattern formation region is referred to as a second region, and forming the pattern formation region such that the transmittance in the second region is lower than the transmittance in the first region. A method for manufacturing a photomask comprising: a transflective region on a transparent substrate by a transflective film; a laminate region in which a light blocking film and the transflective film are stacked in this order on the transparent substrate; As,
A step of preparing a mask blank in which a light-shielding film is formed on the surface of the transparent substrate;
forming a first photoresist film on the surface of the mask blank;
a step of forming a first photoresist pattern by drawing on the first photoresist film with a drawing device;
removing a portion of the light-shielding film using the first photoresist pattern as a mask;
forming a semi-transmissive film on the entire surface of the photomask including the light-shielding film;
forming a second photoresist film on the surface of the semi-transmissive film;
a step of forming a second photoresist pattern by drawing on the second photoresist film with a drawing device;
and removing a portion of the semi-transmissive layer using the second photoresist pattern as a mask,
When a region of a predetermined area including a central portion of the pattern formation region formed by the light-shielding film and the semi-transmissive film is referred to as a first region, and a region of a predetermined area in the outer periphery of the pattern formation region is referred to as a second region, and forming the pattern formation region such that the transmittance in the second region is lower than the transmittance in the first region. A method of manufacturing a display device comprising: a resist forming step of forming a desired resist shape on a transfer target substrate using the photomask of any one of claims 1 to 4,
The resist forming process is
an exposure step of exposing the resist through the photomask;
and developing the exposed resist to form the desired resist shape.

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