TW202223127A - Gas distribution module and vacuum coating device - Google Patents
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本發明關於一種分配模組,特別關於一種應用於真空鍍膜裝置的氣體分配模組與真空鍍膜裝置。The present invention relates to a distribution module, in particular to a gas distribution module and a vacuum coating device applied to a vacuum coating device.
現今常用的鍍膜製程可包括濺鍍 (Sputter)製程、化學氣相沈積(CVD)製程、金屬有機化學氣相沈積(Metal-organic CVD, MOCVD)製程、或原子層沉積系統(ALD)等。以化學氣相沉積(CVD)為例,其是一種可以用來產生純度高、性能好的固態材料的化學技術。典型的化學氣相沉積製程是將基板暴露在一種或多種不同的反應前驅物(Precursor)下,在基底表面發生化學反應(沉積)或/及化學分解(蝕刻)來產生待沉積的薄膜。Commonly used coating processes today may include sputtering (Sputter) process, chemical vapor deposition (CVD) process, metal-organic chemical vapor deposition (Metal-organic CVD, MOCVD) process, or atomic layer deposition (ALD) system. Take, for example, chemical vapor deposition (CVD), a chemical technique that can be used to produce solid-state materials of high purity and performance. A typical chemical vapor deposition process is to expose the substrate to one or more different reactive precursors (Precursor), and chemical reaction (deposition) or/and chemical decomposition (etching) occur on the surface of the substrate to produce the film to be deposited.
請參照圖1所示,其為現有一種真空鍍膜裝置的示意圖。在圖1的真空鍍膜裝置1中,基板W設置於真空腔體11的承載台12上;氣體分配器14固定在真空腔體11內,且位於基板W的上側,而反應前驅物可利用進氣通道13並通過氣體分配器14進入真空腔體11的反應空間R中;加熱器15設置在承載台12以加熱基板W及真空腔體11的反應空間R。在基板W上形成薄膜的過程中,加熱器15可加熱而使基板W與反應空間R的溫度上升至反應所需溫度,當一或多種反應物由進氣通道13進入真空腔體11,並通過氣體分配器14進入反應空間R時,可與基板W進行化學反應或/及化學分解來產生待沉積的薄膜。Please refer to FIG. 1 , which is a schematic diagram of a conventional vacuum coating device. In the
然而,目前真空鍍膜裝置大多設計以供平面基板使用,若是基板不是平面,而是具有曲面或高低起伏等不規則形狀,例如汽車或飛機的擋風玻璃、或大尺寸鏡片等,因為物理性的遮蔽效性的緣故,所形成之薄膜均勻性將受到影響,故應用於曲面的基板時,現有的真空鍍膜裝置的腔體大多需要客製化重新設計,若基板的形狀一改變,則原先設計的腔體將不適用。另外,目前真空鍍膜裝置應用在具有曲面或高低起伏等不規則形狀的基板時,薄膜均勻性始終較平面基板差,對於薄膜均勻性要求較高的產品也無法使用。However, most of the current vacuum coating devices are designed for flat substrates. If the substrates are not flat, but have irregular shapes such as curved surfaces or high and low undulations, such as windshields of automobiles or airplanes, or large-sized lenses, etc., because of physical Due to the shielding effect, the uniformity of the formed film will be affected. Therefore, when applied to a curved substrate, the cavity of the existing vacuum coating device needs to be customized and redesigned. If the shape of the substrate is changed, the original design cavities will not apply. In addition, when the current vacuum coating device is applied to substrates with irregular shapes such as curved surfaces or high and low undulations, the film uniformity is always worse than that of flat substrates, and products that require high film uniformity cannot be used.
本發明的目的為提供一種應用於真空鍍膜裝置的氣體分配模組和真空鍍膜裝置,相較於現有技術而言,本發明除了可適用於各種形狀的曲面基板,使在曲面基板上形成的薄膜的均勻性良好外,還可縮小成膜反應之反應空間的體積,提高鍍膜速率。The purpose of the present invention is to provide a gas distribution module and a vacuum coating device applied to a vacuum coating device. Compared with the prior art, the present invention is not only applicable to curved substrates of various shapes, but also enables thin films formed on the curved substrates. In addition to good uniformity, it can also reduce the volume of the reaction space for the film-forming reaction and improve the coating rate.
為達上述目的,本發明提出一種應用於真空鍍膜裝置之氣體分配模組,其與一基板配合應用,氣體分配模組包括:複數噴頭單元並排設置於真空鍍膜裝置的一真空腔體內,每一個噴頭單元包括一噴頭;其中,基板包括面向該些噴頭之一曲面,該些噴頭單元於真空腔體的設置位置係依據基板之曲面的形狀變化而改變。In order to achieve the above object, the present invention proposes a gas distribution module applied to a vacuum coating device, which is used in conjunction with a substrate. The gas distribution module includes: a plurality of showerhead units are arranged side by side in a vacuum chamber of the vacuum coating device, each of which is The shower head unit includes a shower head; wherein, the substrate includes a curved surface facing the shower heads, and the arrangement positions of the shower head units in the vacuum chamber are changed according to the shape of the curved surface of the substrate.
為達上述目的,本發明提出一種真空鍍膜裝置,包括一真空腔體、一噴頭固定單元、一氣體分配模組以及一加熱單元。真空腔體具有一側壁部,基板設置於側壁部上;噴頭固定單元設置於側壁部,且側壁部分別與噴頭固定單元及基板連接以形成一反應空間;氣體分配模組包括複數噴頭單元,該些噴頭單元透過噴頭固定單元並排設置於真空腔體內,且每一個噴頭單元包括一噴頭,該些噴頭位於反應空間;加熱單元設置於基板遠離反應空間的一側;其中,基板包括面向該些噴頭之一曲面,該些噴頭單元於真空腔體的設置位置係依據曲面的形狀變化而改變。To achieve the above object, the present invention provides a vacuum coating device, which includes a vacuum chamber, a nozzle fixing unit, a gas distribution module and a heating unit. The vacuum chamber has a side wall portion, and the substrate is arranged on the side wall portion; the nozzle fixing unit is arranged on the side wall portion, and the side wall portion is respectively connected with the shower head fixing unit and the substrate to form a reaction space; the gas distribution module includes a plurality of shower head units, the The showerhead units are arranged side by side in the vacuum chamber through the showerhead fixing unit, and each showerhead unit includes a showerhead, and the showerheads are located in the reaction space; the heating unit is arranged on the side of the substrate away from the reaction space; wherein, the substrate includes facing the showerheads A curved surface, and the arrangement positions of the nozzle units in the vacuum chamber are changed according to the shape of the curved surface.
在一實施例中,該些噴頭與曲面間的距離實質上皆相等。In one embodiment, the distances between the nozzles and the curved surfaces are substantially equal.
在一實施例中,噴頭具有多個出氣孔,噴頭單元更包括與噴頭連接之一導管,導管具有一流道,流道與該些出氣孔彼此連通。In one embodiment, the spray head has a plurality of air outlet holes, the spray head unit further includes a conduit connected with the spray head, the conduit has a flow channel, and the flow channel and the air outlet holes communicate with each other.
在一實施例中,係將基板視為真空腔體的一部分。In one embodiment, the substrate is considered part of the vacuum chamber.
在一實施例中,係調整該些噴頭單元與噴頭固定單元的相對位置,以改變該些噴頭單元在真空腔體的設置位置。In one embodiment, the relative positions of the nozzle units and the nozzle fixing units are adjusted to change the arrangement positions of the nozzle units in the vacuum chamber.
在一實施例中,噴頭固定單元具有多個穿孔,該些噴頭單元分別穿設該些穿孔,並與該些穿孔可移動地緊密配合。In one embodiment, the spray head fixing unit has a plurality of through holes, and the spray head units pass through the through holes respectively and are movably closely matched with the through holes.
在一實施例中,噴頭固定單元之該些穿孔或該些噴頭單元以蜂巢狀方式排列。In one embodiment, the through holes of the nozzle fixing unit or the nozzle units are arranged in a honeycomb-like manner.
在一實施例中,一反應物由側壁部之一進氣口經由該些噴頭單元進入反應空間,且經由該些噴頭單元的間隙由側壁部的一出氣口離開反應空間。In one embodiment, a reactant enters the reaction space from an air inlet of the side wall through the nozzle units, and leaves the reaction space from an air outlet of the side wall through a gap between the nozzle units.
在一實施例中,真空鍍膜裝置更包括一進氣歧管單元,其設置於側壁部,並與噴頭固定單元連接,進氣歧管單元包括一氣體注入空間,一反應物由側壁部之一進氣口進入氣體注入空間。In one embodiment, the vacuum coating device further includes an intake manifold unit, which is disposed on the side wall and is connected to the shower head fixing unit. The intake manifold unit includes a gas injection space, and a reactant is formed from one of the side walls. The air inlet enters the gas injection space.
在一實施例中,進氣歧管單元更包括多個歧管流道,該些歧管流道與氣體注入空間連通,且氣體注入空間經由該些歧管流道、該些噴頭單元的該些流道及各噴頭的該些出氣孔與反應空間連通。In one embodiment, the intake manifold unit further includes a plurality of manifold flow channels, the manifold flow channels are communicated with the gas injection space, and the gas injection space passes through the manifold flow channels, the The flow channels and the air outlet holes of each nozzle are communicated with the reaction space.
在一實施例中,該些歧管流道與該些導管之該些流道對應設置。In one embodiment, the manifold flow channels are arranged corresponding to the flow channels of the conduits.
在一實施例中,噴頭固定單元具有多個穿孔,噴頭固定單元與進氣歧管單元之間具有多個密封件,該些密封件與該些穿孔對應設置。In one embodiment, the spray head fixing unit has a plurality of perforations, and a plurality of sealing members are disposed between the spray head fixing unit and the intake manifold unit, and the sealing members are arranged corresponding to the through holes.
在一實施例中,進氣歧管單元在沿側壁部的一延伸方向上的厚度正相關於曲面之高低起伏的上下限。In one embodiment, the thickness of the intake manifold unit along an extension direction of the side wall portion is positively related to the upper and lower limits of the undulations of the curved surface.
在一實施例中,真空腔體更具有一頂部,基板位於頂部與氣體分配模組之間,且加熱單元位於頂部與基板之間。In one embodiment, the vacuum chamber further has a top, the substrate is located between the top and the gas distribution module, and the heating unit is located between the top and the substrate.
承上所述,在本發明應用於真空鍍膜裝置的氣體分配模組與真空鍍膜裝置中,基板設置於真空腔體的側壁部上,且真空腔體的側壁部分別與噴頭固定單元及基板連接以形成反應空間;氣體分配模組的該些噴頭單元透過噴頭固定單元並排設置於真空腔體內,且噴頭單元的噴頭位於反應空間;加熱單元設置於基板遠離反應空間的一側;其中,基板包括面向該些噴頭之曲面,該些噴頭單元於真空腔體的設置位置係依據曲面的形狀變化而改變。藉此,相較於現有之真空鍍膜裝置而言,當應用於不同的曲面基板而有不同的曲面形狀時,本發明只要依據該曲面形狀的變化而相對調整氣體分配模組的該些噴頭單元與噴頭固定單元的相對位置,即可適用於各種形狀的曲面基板,同時可使曲面基板具有良好的薄膜均勻性,藉此改善現有薄膜均勻性不佳的問題。另外,本發明的真空鍍膜裝置還可利用基板來縮小進行成膜反應之反應空間的體積,因此可以提高鍍膜的速率。As mentioned above, in the gas distribution module and the vacuum coating device of the present invention applied to the vacuum coating device, the substrate is arranged on the side wall of the vacuum chamber, and the side wall of the vacuum chamber is respectively connected to the nozzle fixing unit and the substrate. to form a reaction space; the nozzle units of the gas distribution module are arranged side by side in the vacuum chamber through the nozzle fixing unit, and the nozzles of the nozzle units are located in the reaction space; the heating unit is arranged on the side of the substrate away from the reaction space; wherein, the substrate includes Facing the curved surfaces of the nozzles, the arrangement positions of the nozzle units in the vacuum chamber are changed according to the shape of the curved surfaces. Therefore, compared with the existing vacuum coating device, when applied to different curved substrates with different curved surface shapes, the present invention only needs to relatively adjust the shower head units of the gas distribution module according to the change of the curved surface shape The relative position of the nozzle fixing unit can be applied to curved substrates of various shapes, and at the same time, the curved substrates can have good film uniformity, thereby improving the existing problem of poor film uniformity. In addition, the vacuum coating apparatus of the present invention can also use the substrate to reduce the volume of the reaction space for the film formation reaction, so that the coating rate can be increased.
以下將參照相關圖式,說明依本發明較佳實施例之氣體分配模組與真空鍍膜裝置,其中相同的元件將以相同的參照符號加以說明。The gas distribution module and the vacuum coating device according to the preferred embodiments of the present invention will be described below with reference to the related drawings, wherein the same components will be described with the same reference symbols.
請參照圖2至圖3B所示,其中,圖2為本發明一實施例之一種真空鍍膜裝置的示意圖,圖3A為圖2的真空鍍膜裝置中,氣體分配模組之噴頭單元的局部示意圖,而圖3B為圖2的真空鍍膜裝置中,噴頭固定單元之一橫截面示意圖。Please refer to FIGS. 2 to 3B , wherein FIG. 2 is a schematic diagram of a vacuum coating device according to an embodiment of the present invention, and FIG. 3A is a partial schematic diagram of the shower head unit of the gas distribution module in the vacuum coating device of FIG. 2 , 3B is a schematic cross-sectional view of one of the nozzle fixing units in the vacuum coating apparatus of FIG. 2 .
真空鍍膜裝置2與一基板W配合應用。基板W為具有曲面或高低起伏等不規則形狀的一曲面基板,其具有至少一曲面W1。本實施例之基板W的曲面W1是一個弧形表面,當然,在不同的實施例中,曲面W1也可包括多個弧形表面的組合(多個曲面的組合)、或包括高低起伏等不規則形狀、或其組合。在一些實施例中,基板W為可透光或不可透光材料製成,例如藍寶石(Sapphire)基材、砷化鎵(GaAs)基材、或碳化矽(SiC)基材,並不限制。在一些實施例中,基板W上可具有膜層。The
如圖2所示,真空鍍膜裝置2包括一真空腔體21、一噴頭固定單元22、一氣體分配模組23以及一加熱單元24。另外,本實施例之真空鍍膜裝置2更可包括一進氣歧管單元25、一進氣通道26及一排氣通道27。As shown in FIG. 2 , the
真空腔體21具有一側壁部211,基板W設置於側壁部211上。於此,是以真空腔體21的側壁部211作為基板W的承載機構。另外,本實施例之真空腔體21更包括與側壁部211連接之一底部212,且真空腔體21是由基板W、側壁部211及底部212所構成。換句話說,本實施例是使基板W1蓋合在真空腔體21的側壁部211上,以將基板W1視為真空腔體21的一部分。為了使基板W與側壁部211可以密合,基板W與側壁部211之間可具有一密封件O1,密封件O1例如但不限於O型環,藉此避免形成真空時,外界氣體進入真空腔體21內部而干擾製程。The
噴頭固定單元22顧名思義是用以固定氣體分配模組(的噴頭單元)。噴頭固定單元22設置於真空腔體21的側壁部211,且側壁部211分別與噴頭固定單元22及基板W連接以形成一反應空間R。於此,噴頭固定單元22是設置於側壁部211遠離基板W的一側,而側壁部211、噴頭固定單元22及基板W共同圍設成反應空間R,反應空間R就是反應物(例如反應前驅物)進入真空腔體21之後,與基板W進行化學反應或/及化學分解來產生待沉積薄膜的處理空間。The shower
氣體分配模組23設置於噴頭固定單元22,氣體分配模組23包括複數噴頭單元231,該些噴頭單元231透過噴頭固定單元22並排設置於真空腔體21內。如圖2和圖3B所示,噴頭固定單元22具有多個穿孔H,該些噴頭單元231與該些穿孔H對應設置(一對一對應)。另外,該些噴頭單元231分別穿設該些穿孔H,並與該些穿孔H可移動地緊密配合,藉此透過噴頭固定單元22調整(移動)及固定該些噴頭單元231與基板W之曲面W1間的距離,進而調整及固定該些噴頭單元231於真空腔體21的位置,並且產生氣密效果,避免反應空間R的氣體往底部212的方向洩露出。The
由於噴頭單元231穿設噴頭固定單元22之對應穿孔H,因此,噴頭固定單元22之穿孔H的位置將決定噴頭單元231的排列方式。舉例來說,如圖3B所示,為了達到比較密集的設置,本實施例的噴頭固定單元22之該些穿孔H是以蜂巢狀方式排列,使該些噴頭單元231同樣也以蜂巢狀的方式排列。當然,噴頭固定單元22之該些穿孔H或該些噴頭單元231也可以是其他排列方式,本發明不限制,可依據在基板W形成膜層的需求而調整排列方式,本發明不限制。Since the
如圖3A所示,每一個噴頭單元231包括一噴頭231a及與噴頭231a連接之一導管231b,噴頭231a具有多個出氣孔h,而導管231b具有一流道C1,且導管231b的流道C1與噴頭231a的該些出氣孔h彼此連通,因此,反應物可以經由噴頭單元231之導管231b的流道C1由該些出氣孔h噴出,以均勻地分佈在基板W的曲面W1上,同時使形成之薄膜的均勻性較好。本實施例的該些噴頭231a皆位於反應空間R,而該些導管231b的一部分也位於反應空間R,但該些導管231b的另一部分則位於噴頭固定單元22的穿孔H內。As shown in FIG. 3A, each
請再參照圖2所示,加熱單元24設置於基板W遠離反應空間R的一側。加熱單元24可加熱基板W及真空腔體21,使基板W與反應空間R的溫度可以達到化學反應或/及化學分解的製程所需溫度。與現有設置於真空腔體21內的加熱器來說(如圖1),本實施例的加熱單元24設置於基板W遠離反應空間R的一側,因此可避免進入反應空間R的反應前驅物或其他氣體汙染加熱單元24。在一些實施例中,加熱單元24可例如但不限於為紅外線或電熱加熱器。在一些實施例中,當加熱單元24加熱時,可利用例如反射件將遠離基板W的熱能再反射回基板W,藉此提高加熱效率。反射件例如但不限於為反射鏡、反射片或反射膜層,其可將遠離基板W的熱能再反射回基板W。Referring to FIG. 2 again, the
進氣通道26與排氣通道27分別連接於真空腔體21的側壁部211,且進氣通道26和排氣通道27係透過氣體分配模組23的該些噴頭單元231與反應空間R連通。具體來說,本實施例的進氣通道26連接於側壁部211的一進氣口I,排氣通道27連接於側壁部211的一出氣口O,使得反應物(例如反應前驅物)可由進氣通道26經由噴頭單元231進入反應空間R;並且,為了使進入的反應物可均勻分配在基板W的曲面W1,本實施例利用氣體分配模組23來進行反應物的分配,使進入真空腔體21的反應物可以均勻分配在位於反應空間R的曲面W1,進而使成膜過程可以更均勻。The
另外,進氣歧管單元25設置於側壁部211,並與噴頭固定單元22連接。本實施例的噴頭固定單元22是透過鎖固件T(例如螺絲)與進氣歧管單元25鎖合連接後,與側壁部211緊密連接,使進氣歧管單元25位於側壁部211、噴頭固定單元22及底部212之間。在此,噴頭固定單元22與進氣歧管單元25之間可具有多個密封件O2(例如但不限於O型環),並且該些密封件O2與噴頭固定單元22的該些穿孔H對應設置(一對一對應)。換句話說,當各噴頭單元231插入噴頭固定單元22的對應穿孔H,為了可調整(移動)且固定各噴頭單元231在噴頭固定單元22的設置位置,本實施例是透過該些密封件O2使噴頭單元231可與穿孔H緊密配合,其中,當噴頭單元231(的導管231b)在穿孔H內移動而到一位置時,密封件O2除了具有固定噴頭單元231(導管231b)之位置的功能外,還可產生氣密作用,避免反應空間R內的氣體由噴頭固定單元22的穿孔H洩露出。In addition, the
本實施例之進氣歧管單元25包括多個進氣歧管251及一氣體注入空間S。該些進氣歧管251之間可形成多個歧管流道C2,該些歧管流道C2與該些導管231b之該些流道C1對應設置(一對一對應且連通),而前述之密封件O2的數量與歧管流道C2的數量相同。另外,氣體注入空間S位於進氣歧管251(及歧管流道C2)的下側,並位於進氣歧管251與進氣歧管單元25之底部之間,並且氣體注入空間S與該些歧管流道C2連通,反應物可由側壁部211的進氣口I進入氣體注入空間S並流入該些歧管流道C2。詳細來說,本實施例的進氣歧管單元25的氣體注入空間S經由該些歧管流道C2、該些噴頭單元231的該些流道C1及各噴頭231a的該些出氣孔h與反應空間R連通,因此,當反應物進入氣體注入空間S後,可經由該些歧管流道C2、該些噴頭單元231的該些流道C1及各噴頭231a的該些出氣孔h噴出,而與基板W的曲面W1進行成膜反應,反應之後,反應空間R內多餘的反應物及/或副產物可經由該些噴頭單元231的間隙由側壁部211的出氣口O排出。The
在一些實施例中,在進行成膜反應之前,可利用一排氣單元(圖未繪示,例如真空泵浦)並透過排氣通道27將反應空間R的氣體排出。在一些製程中,加熱單元24可加熱基板W而使基板W與反應空間R的溫度上升至反應所需溫度,反應物(反應前驅物)可由進氣通道26通過進氣歧管單元25、氣體分配模組23進入反應空間R且均勻分配至基板W的曲面W1,使反應物可與基板W進行化學反應或/及化學分解,之後再透過排氣單元將反應空間R多餘的反應物及/或副產物由該些噴頭單元231的間隙經由排氣通道27排出。在一些實施例中,在反應物進入反應空間R且進行化學反應或/及化學分解之後,反應空間R內可能還有多餘的反應物及/或副產物,可利用不反應物(例如惰性氣體,如氮氣或氬氣)由進氣通道26經由進氣歧管單元25、氣體分配模組23進入反應空間R,並經由排氣通道27排出,除了可吹掃多餘的反應物及副產物外,更可控制進入之不反應物的流量來控制基板W及反應空間R的溫度,以提高基板W及反應空間R的降溫速率(例如流量大,降溫速率較快)。In some embodiments, before the film formation reaction is performed, an exhaust unit (not shown, such as a vacuum pump) may be used to exhaust the gas in the reaction space R through the
特別提醒的是,在本實施例中,進氣歧管單元25在沿側壁部211的一延伸方向D上的厚度d正相關於曲面W1之高低起伏的上下限。換句話說,進氣歧管單元25的該厚度d可決定曲面W1之高低起伏的上下限,厚度d越大者,則基板W之曲面W1的高低起伏的上下限則可以越大。It should be noted that, in this embodiment, the thickness d of the
承上,為了使具有曲面W1之基板W的成膜可以更均勻,氣體分配模組23的該些噴頭單元231的配置需與基板W的曲面W1形狀相互配合。具體來說,為了使曲面W1上形成的薄膜具有好的均勻性,本實施例之氣體分配模組23的該些噴頭單元231於真空腔體21的設置位置係依據基板W之曲面W1的形狀變化而改變。在此,當噴頭單元231穿過且固定在噴頭固定單元22的穿孔H的過程中,可依據基板W之曲面W1的形狀變化而調整(移動)每一個噴頭單元231與對應曲面W1位置間的距離,進而調整每一個噴頭單元231與噴頭固定單元22的相對位置,藉此改變該些噴頭單元231在真空腔體21(或反應空間R)的設置位置,使該些噴頭單元231的該些噴頭231a與曲面W1間的距離實質上皆相等(因設置誤差,各噴頭231a與曲面W1間的距離可能有些許差異,但大體上,所有噴頭231a與曲面W1間的距離實質上都相等)。In addition, in order to make the film formation of the substrate W with the curved surface W1 more uniform, the arrangement of the
因此,當應用於不同的曲面基板而有不同的曲面形狀時,本實施例之真空鍍膜裝置2只要依據該曲面形狀的變化而相對調整氣體分配模組23的該些噴頭單元231與噴頭固定單元22的相對位置,即可適用於各種形狀的曲面基板,使曲面基板形成的薄膜的均勻性良好,藉此改善現有技術中,曲面基板形成的薄膜均勻性不佳的問題。另外,由於在真空鍍膜裝置2中,基板W設置於真空腔體21的側壁部211上,且側壁部211分別與噴頭固定單元22及基板W連接以形成反應空間R,因此,是利用基板W1來形成反應空間R(基板W1可視為真空腔體21的一部分),藉此,可以縮小進行成膜反應之反應空間R的體積,提高鍍膜的速率。Therefore, when applied to different curved substrates with different curved surface shapes, the
圖4為本發明之真空鍍膜裝置與不同基板配合應用的示意圖,而圖5為本發明不同實施例之真空鍍膜裝置的示意圖。FIG. 4 is a schematic diagram of the application of the vacuum coating apparatus of the present invention with different substrates, and FIG. 5 is a schematic diagram of the vacuum coating apparatus of different embodiments of the present invention.
如圖4所示,本實施例的真空鍍膜裝置2a與前述實施例的真空鍍膜裝置2其元件組成及各元件的連接關係大致相同。不同之處在於,本實施例之基板Wa的曲面W1形狀與真空鍍膜裝置2中的基板W不同。在此,基板Wa的曲面W1形狀包括上下起伏的連續多個曲面(多個弧形表面的組合),因此,本實施例之氣體分配模組23的該些噴頭單元231的配置與基板Wa的曲面W1形狀相互配合。換句話說,為了上下起伏之基板Wa的曲面W1的成膜過程可以更均勻,本實施例之氣體分配模組23的各噴頭單元231根據基板Wa的曲面W1形狀在各穿孔H中移動,使各噴頭單元231於真空腔體21的設置位置依據上下起伏之基板Wa的曲面W1的形狀變化而改變,進而使該些噴頭單元231的該些噴頭231a與基板Wa的曲面W1間的距離實質上皆相等。As shown in FIG. 4 , the
另外,如圖5所示,本實施例的真空鍍膜裝置2b與前述實施例的真空鍍膜裝置2其元件組成及各元件的連接關係大致相同。不同之處在於,在本實施例的真空鍍膜裝置2b中,真空腔體21b更具有一頂部213,基板W位於頂部213與氣體分配模組23之間,且加熱單元24位於頂部213與基板W之間。在不同的實施例中,加熱單元24也可位於頂部213遠離基板W的一側(即頂部213的上側),本發明不限制。真空腔體21b具有頂部213的特徵也可應用於本發明其他的實施例中。In addition, as shown in FIG. 5 , the
綜上所述,在本發明應用於真空鍍膜裝置的氣體分配模組與真空鍍膜裝置中,基板設置於真空腔體的側壁部上,且真空腔體的側壁部分別與噴頭固定單元及基板連接以形成反應空間;氣體分配模組的該些噴頭單元透過噴頭固定單元並排設置於真空腔體內,且噴頭單元的噴頭位於反應空間;加熱單元設置於基板遠離反應空間的一側;其中,基板包括面向該些噴頭之曲面,該些噴頭單元於真空腔體的設置位置係依據曲面的形狀變化而改變。藉此,相較於現有之真空鍍膜裝置而言,當應用於不同的曲面基板而有不同的曲面形狀時,本發明只要依據該曲面形狀的變化而相對調整氣體分配模組的該些噴頭單元與噴頭固定單元的相對位置,即可適用於各種形狀的曲面基板,同時可使曲面基板具有良好的薄膜均勻性,藉此改善現有薄膜均勻性不佳的問題。另外,本發明的真空鍍膜裝置還可利用基板來縮小進行成膜反應之反應空間的體積,因此可以提高鍍膜的速率。To sum up, in the gas distribution module and the vacuum coating device of the present invention applied to the vacuum coating device, the substrate is disposed on the side wall of the vacuum chamber, and the side wall of the vacuum chamber is respectively connected to the shower head fixing unit and the substrate to form a reaction space; the nozzle units of the gas distribution module are arranged side by side in the vacuum chamber through the nozzle fixing unit, and the nozzles of the nozzle units are located in the reaction space; the heating unit is arranged on the side of the substrate away from the reaction space; wherein, the substrate includes Facing the curved surfaces of the nozzles, the arrangement positions of the nozzle units in the vacuum chamber are changed according to the shape of the curved surfaces. Therefore, compared with the existing vacuum coating device, when applied to different curved substrates with different curved surface shapes, the present invention only needs to relatively adjust the shower head units of the gas distribution module according to the change of the curved surface shape The relative position of the nozzle fixing unit can be applied to curved substrates of various shapes, and at the same time, the curved substrates can have good film uniformity, thereby improving the existing problem of poor film uniformity. In addition, the vacuum coating apparatus of the present invention can also use the substrate to reduce the volume of the reaction space for the film formation reaction, so that the coating rate can be increased.
以上所述僅為舉例性,而非為限制性者。任何未脫離本發明之精神與範疇,而對其進行之等效修改或變更,均應包含於後附之申請專利範圍中。The above description is exemplary only, not limiting. Any equivalent modifications or changes that do not depart from the spirit and scope of the present invention shall be included in the appended patent application scope.
1,2,2a,2b:真空鍍膜裝置
11,21,21b:真空腔體
12:承載台
13,26:進氣通道
14:氣體分配器
15:加熱器
211:側壁部
212:底部
213:頂部
22:噴頭固定單元
23:氣體分配模組
231:噴頭單元
231a:噴頭
231b:導管
24:加熱單元
25:進氣歧管單元
251:進氣歧管
27:排氣通道
C1:流道
C2:歧管流道
d:厚度
D:延伸方向
h:出氣孔
H:穿孔
I:進氣口
O:出氣口
O1,O2:密封件
R:反應空間
S:氣體注入空間
T:鎖固件
W,Wa:基板
W1:曲面
1, 2, 2a, 2b:
圖1為現有一種真空鍍膜裝置的示意圖。 圖2為本發明一實施例之一種真空鍍膜裝置的示意圖。 圖3A為圖2的真空鍍膜裝置中,氣體分配模組之噴頭單元的局部示意圖。 圖3B為圖2的真空鍍膜裝置中,噴頭固定單元之一橫截面示意圖。 圖4為本發明之真空鍍膜裝置與不同基板配合應用的示意圖。 圖5為本發明不同實施例之真空鍍膜裝置的示意圖。 FIG. 1 is a schematic diagram of a conventional vacuum coating device. FIG. 2 is a schematic diagram of a vacuum coating apparatus according to an embodiment of the present invention. FIG. 3A is a partial schematic view of the shower head unit of the gas distribution module in the vacuum coating apparatus of FIG. 2 . FIG. 3B is a schematic cross-sectional view of one of the nozzle fixing units in the vacuum coating apparatus of FIG. 2 . FIG. 4 is a schematic diagram of the cooperating application of the vacuum coating device of the present invention with different substrates. 5 is a schematic diagram of a vacuum coating apparatus according to different embodiments of the present invention.
2:真空鍍膜裝置 2: Vacuum coating device
21:真空腔體 21: Vacuum chamber
211:側壁部 211: side wall
212:底部 212: Bottom
22:噴頭固定單元 22: Nozzle fixing unit
23:氣體分配模組 23: Gas distribution module
231:噴頭單元 231: Nozzle unit
231a:噴頭 231a: Sprinkler
231b:導管 231b: Catheter
24:加熱單元 24: Heating unit
25:進氣歧管單元 25: Intake manifold unit
251:進氣歧管 251: intake manifold
26:進氣通道 26: Intake channel
27:排氣通道 27: Exhaust channel
C1:流道 C1: runner
C2:歧管流道 C2: Manifold runner
d:厚度 d: thickness
D:延伸方向 D: extension direction
h:出氣孔 h: vent hole
H:穿孔 H: perforated
I:進氣口 I: Air intake
O:出氣口 O: air outlet
O1,O2:密封件 O1,O2: Seals
R:反應空間 R: reaction space
S:氣體注入空間 S: Gas injection space
T:鎖固件 T: lock firmware
W:基板 W: substrate
W1:曲面 W1: Surface
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