TW202223127A - Gas distribution module and vacuum coating device - Google Patents

Gas distribution module and vacuum coating device Download PDF

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TW202223127A
TW202223127A TW109142634A TW109142634A TW202223127A TW 202223127 A TW202223127 A TW 202223127A TW 109142634 A TW109142634 A TW 109142634A TW 109142634 A TW109142634 A TW 109142634A TW 202223127 A TW202223127 A TW 202223127A
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substrate
coating device
vacuum coating
shower head
units
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TW109142634A
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TWI755956B (en
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柯志忠
卓文浩
陳建霖
楊承燁
張揚愉
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財團法人國家實驗研究院
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Abstract

The present invention discloses a gas distribution module and a vacuum coating device. The vacuum coating device includes a vacuum chamber, a showerhead fixing unit, a gas distribution module, and a heating unit. The vacuum chamber has a side wall portion, and the substrate is disposed on the side wall portion. The showerhead fixing unit is disposed at the side wall portion, and the side wall portion is respectively connected with the showerhead fixing unit and the substrate to form a reaction space. The gas distribution module includes a plurality of showerhead units. The showerhead units are disposed side by side in the vacuum chamber through the showerhead fixing unit, and each showerhead unit includes a nozzle, and the nozzles are located in the reaction space. The heating unit is disposed at one side of the substrate away from the reaction space; wherein, the substrate includes a curved surface facing the nozzles, and the disposed positions of the showerhead units in the vacuum chamber are changed according to the shape of the curved surface.

Description

氣體分配模組與真空鍍膜裝置Gas distribution module and vacuum coating device

本發明關於一種分配模組,特別關於一種應用於真空鍍膜裝置的氣體分配模組與真空鍍膜裝置。The present invention relates to a distribution module, in particular to a gas distribution module and a vacuum coating device applied to a vacuum coating device.

現今常用的鍍膜製程可包括濺鍍 (Sputter)製程、化學氣相沈積(CVD)製程、金屬有機化學氣相沈積(Metal-organic  CVD,  MOCVD)製程、或原子層沉積系統(ALD)等。以化學氣相沉積(CVD)為例,其是一種可以用來產生純度高、性能好的固態材料的化學技術。典型的化學氣相沉積製程是將基板暴露在一種或多種不同的反應前驅物(Precursor)下,在基底表面發生化學反應(沉積)或/及化學分解(蝕刻)來產生待沉積的薄膜。Commonly used coating processes today may include sputtering (Sputter) process, chemical vapor deposition (CVD) process, metal-organic chemical vapor deposition (Metal-organic CVD, MOCVD) process, or atomic layer deposition (ALD) system. Take, for example, chemical vapor deposition (CVD), a chemical technique that can be used to produce solid-state materials of high purity and performance. A typical chemical vapor deposition process is to expose the substrate to one or more different reactive precursors (Precursor), and chemical reaction (deposition) or/and chemical decomposition (etching) occur on the surface of the substrate to produce the film to be deposited.

請參照圖1所示,其為現有一種真空鍍膜裝置的示意圖。在圖1的真空鍍膜裝置1中,基板W設置於真空腔體11的承載台12上;氣體分配器14固定在真空腔體11內,且位於基板W的上側,而反應前驅物可利用進氣通道13並通過氣體分配器14進入真空腔體11的反應空間R中;加熱器15設置在承載台12以加熱基板W及真空腔體11的反應空間R。在基板W上形成薄膜的過程中,加熱器15可加熱而使基板W與反應空間R的溫度上升至反應所需溫度,當一或多種反應物由進氣通道13進入真空腔體11,並通過氣體分配器14進入反應空間R時,可與基板W進行化學反應或/及化學分解來產生待沉積的薄膜。Please refer to FIG. 1 , which is a schematic diagram of a conventional vacuum coating device. In the vacuum coating device 1 of FIG. 1 , the substrate W is set on the carrier 12 of the vacuum chamber 11 ; the gas distributor 14 is fixed in the vacuum chamber 11 and is located on the upper side of the substrate W, and the reaction precursor can be used in the The gas channel 13 enters the reaction space R of the vacuum chamber 11 through the gas distributor 14 ; the heater 15 is arranged on the bearing table 12 to heat the substrate W and the reaction space R of the vacuum chamber 11 . During the process of forming the thin film on the substrate W, the heater 15 can be heated to increase the temperature of the substrate W and the reaction space R to the temperature required for the reaction. When one or more reactants enter the vacuum chamber 11 from the air inlet channel 13, and When entering the reaction space R through the gas distributor 14, a chemical reaction or/and chemical decomposition may be performed with the substrate W to generate the thin film to be deposited.

然而,目前真空鍍膜裝置大多設計以供平面基板使用,若是基板不是平面,而是具有曲面或高低起伏等不規則形狀,例如汽車或飛機的擋風玻璃、或大尺寸鏡片等,因為物理性的遮蔽效性的緣故,所形成之薄膜均勻性將受到影響,故應用於曲面的基板時,現有的真空鍍膜裝置的腔體大多需要客製化重新設計,若基板的形狀一改變,則原先設計的腔體將不適用。另外,目前真空鍍膜裝置應用在具有曲面或高低起伏等不規則形狀的基板時,薄膜均勻性始終較平面基板差,對於薄膜均勻性要求較高的產品也無法使用。However, most of the current vacuum coating devices are designed for flat substrates. If the substrates are not flat, but have irregular shapes such as curved surfaces or high and low undulations, such as windshields of automobiles or airplanes, or large-sized lenses, etc., because of physical Due to the shielding effect, the uniformity of the formed film will be affected. Therefore, when applied to a curved substrate, the cavity of the existing vacuum coating device needs to be customized and redesigned. If the shape of the substrate is changed, the original design cavities will not apply. In addition, when the current vacuum coating device is applied to substrates with irregular shapes such as curved surfaces or high and low undulations, the film uniformity is always worse than that of flat substrates, and products that require high film uniformity cannot be used.

本發明的目的為提供一種應用於真空鍍膜裝置的氣體分配模組和真空鍍膜裝置,相較於現有技術而言,本發明除了可適用於各種形狀的曲面基板,使在曲面基板上形成的薄膜的均勻性良好外,還可縮小成膜反應之反應空間的體積,提高鍍膜速率。The purpose of the present invention is to provide a gas distribution module and a vacuum coating device applied to a vacuum coating device. Compared with the prior art, the present invention is not only applicable to curved substrates of various shapes, but also enables thin films formed on the curved substrates. In addition to good uniformity, it can also reduce the volume of the reaction space for the film-forming reaction and improve the coating rate.

為達上述目的,本發明提出一種應用於真空鍍膜裝置之氣體分配模組,其與一基板配合應用,氣體分配模組包括:複數噴頭單元並排設置於真空鍍膜裝置的一真空腔體內,每一個噴頭單元包括一噴頭;其中,基板包括面向該些噴頭之一曲面,該些噴頭單元於真空腔體的設置位置係依據基板之曲面的形狀變化而改變。In order to achieve the above object, the present invention proposes a gas distribution module applied to a vacuum coating device, which is used in conjunction with a substrate. The gas distribution module includes: a plurality of showerhead units are arranged side by side in a vacuum chamber of the vacuum coating device, each of which is The shower head unit includes a shower head; wherein, the substrate includes a curved surface facing the shower heads, and the arrangement positions of the shower head units in the vacuum chamber are changed according to the shape of the curved surface of the substrate.

為達上述目的,本發明提出一種真空鍍膜裝置,包括一真空腔體、一噴頭固定單元、一氣體分配模組以及一加熱單元。真空腔體具有一側壁部,基板設置於側壁部上;噴頭固定單元設置於側壁部,且側壁部分別與噴頭固定單元及基板連接以形成一反應空間;氣體分配模組包括複數噴頭單元,該些噴頭單元透過噴頭固定單元並排設置於真空腔體內,且每一個噴頭單元包括一噴頭,該些噴頭位於反應空間;加熱單元設置於基板遠離反應空間的一側;其中,基板包括面向該些噴頭之一曲面,該些噴頭單元於真空腔體的設置位置係依據曲面的形狀變化而改變。To achieve the above object, the present invention provides a vacuum coating device, which includes a vacuum chamber, a nozzle fixing unit, a gas distribution module and a heating unit. The vacuum chamber has a side wall portion, and the substrate is arranged on the side wall portion; the nozzle fixing unit is arranged on the side wall portion, and the side wall portion is respectively connected with the shower head fixing unit and the substrate to form a reaction space; the gas distribution module includes a plurality of shower head units, the The showerhead units are arranged side by side in the vacuum chamber through the showerhead fixing unit, and each showerhead unit includes a showerhead, and the showerheads are located in the reaction space; the heating unit is arranged on the side of the substrate away from the reaction space; wherein, the substrate includes facing the showerheads A curved surface, and the arrangement positions of the nozzle units in the vacuum chamber are changed according to the shape of the curved surface.

在一實施例中,該些噴頭與曲面間的距離實質上皆相等。In one embodiment, the distances between the nozzles and the curved surfaces are substantially equal.

在一實施例中,噴頭具有多個出氣孔,噴頭單元更包括與噴頭連接之一導管,導管具有一流道,流道與該些出氣孔彼此連通。In one embodiment, the spray head has a plurality of air outlet holes, the spray head unit further includes a conduit connected with the spray head, the conduit has a flow channel, and the flow channel and the air outlet holes communicate with each other.

在一實施例中,係將基板視為真空腔體的一部分。In one embodiment, the substrate is considered part of the vacuum chamber.

在一實施例中,係調整該些噴頭單元與噴頭固定單元的相對位置,以改變該些噴頭單元在真空腔體的設置位置。In one embodiment, the relative positions of the nozzle units and the nozzle fixing units are adjusted to change the arrangement positions of the nozzle units in the vacuum chamber.

在一實施例中,噴頭固定單元具有多個穿孔,該些噴頭單元分別穿設該些穿孔,並與該些穿孔可移動地緊密配合。In one embodiment, the spray head fixing unit has a plurality of through holes, and the spray head units pass through the through holes respectively and are movably closely matched with the through holes.

在一實施例中,噴頭固定單元之該些穿孔或該些噴頭單元以蜂巢狀方式排列。In one embodiment, the through holes of the nozzle fixing unit or the nozzle units are arranged in a honeycomb-like manner.

在一實施例中,一反應物由側壁部之一進氣口經由該些噴頭單元進入反應空間,且經由該些噴頭單元的間隙由側壁部的一出氣口離開反應空間。In one embodiment, a reactant enters the reaction space from an air inlet of the side wall through the nozzle units, and leaves the reaction space from an air outlet of the side wall through a gap between the nozzle units.

在一實施例中,真空鍍膜裝置更包括一進氣歧管單元,其設置於側壁部,並與噴頭固定單元連接,進氣歧管單元包括一氣體注入空間,一反應物由側壁部之一進氣口進入氣體注入空間。In one embodiment, the vacuum coating device further includes an intake manifold unit, which is disposed on the side wall and is connected to the shower head fixing unit. The intake manifold unit includes a gas injection space, and a reactant is formed from one of the side walls. The air inlet enters the gas injection space.

在一實施例中,進氣歧管單元更包括多個歧管流道,該些歧管流道與氣體注入空間連通,且氣體注入空間經由該些歧管流道、該些噴頭單元的該些流道及各噴頭的該些出氣孔與反應空間連通。In one embodiment, the intake manifold unit further includes a plurality of manifold flow channels, the manifold flow channels are communicated with the gas injection space, and the gas injection space passes through the manifold flow channels, the The flow channels and the air outlet holes of each nozzle are communicated with the reaction space.

在一實施例中,該些歧管流道與該些導管之該些流道對應設置。In one embodiment, the manifold flow channels are arranged corresponding to the flow channels of the conduits.

在一實施例中,噴頭固定單元具有多個穿孔,噴頭固定單元與進氣歧管單元之間具有多個密封件,該些密封件與該些穿孔對應設置。In one embodiment, the spray head fixing unit has a plurality of perforations, and a plurality of sealing members are disposed between the spray head fixing unit and the intake manifold unit, and the sealing members are arranged corresponding to the through holes.

在一實施例中,進氣歧管單元在沿側壁部的一延伸方向上的厚度正相關於曲面之高低起伏的上下限。In one embodiment, the thickness of the intake manifold unit along an extension direction of the side wall portion is positively related to the upper and lower limits of the undulations of the curved surface.

在一實施例中,真空腔體更具有一頂部,基板位於頂部與氣體分配模組之間,且加熱單元位於頂部與基板之間。In one embodiment, the vacuum chamber further has a top, the substrate is located between the top and the gas distribution module, and the heating unit is located between the top and the substrate.

承上所述,在本發明應用於真空鍍膜裝置的氣體分配模組與真空鍍膜裝置中,基板設置於真空腔體的側壁部上,且真空腔體的側壁部分別與噴頭固定單元及基板連接以形成反應空間;氣體分配模組的該些噴頭單元透過噴頭固定單元並排設置於真空腔體內,且噴頭單元的噴頭位於反應空間;加熱單元設置於基板遠離反應空間的一側;其中,基板包括面向該些噴頭之曲面,該些噴頭單元於真空腔體的設置位置係依據曲面的形狀變化而改變。藉此,相較於現有之真空鍍膜裝置而言,當應用於不同的曲面基板而有不同的曲面形狀時,本發明只要依據該曲面形狀的變化而相對調整氣體分配模組的該些噴頭單元與噴頭固定單元的相對位置,即可適用於各種形狀的曲面基板,同時可使曲面基板具有良好的薄膜均勻性,藉此改善現有薄膜均勻性不佳的問題。另外,本發明的真空鍍膜裝置還可利用基板來縮小進行成膜反應之反應空間的體積,因此可以提高鍍膜的速率。As mentioned above, in the gas distribution module and the vacuum coating device of the present invention applied to the vacuum coating device, the substrate is arranged on the side wall of the vacuum chamber, and the side wall of the vacuum chamber is respectively connected to the nozzle fixing unit and the substrate. to form a reaction space; the nozzle units of the gas distribution module are arranged side by side in the vacuum chamber through the nozzle fixing unit, and the nozzles of the nozzle units are located in the reaction space; the heating unit is arranged on the side of the substrate away from the reaction space; wherein, the substrate includes Facing the curved surfaces of the nozzles, the arrangement positions of the nozzle units in the vacuum chamber are changed according to the shape of the curved surfaces. Therefore, compared with the existing vacuum coating device, when applied to different curved substrates with different curved surface shapes, the present invention only needs to relatively adjust the shower head units of the gas distribution module according to the change of the curved surface shape The relative position of the nozzle fixing unit can be applied to curved substrates of various shapes, and at the same time, the curved substrates can have good film uniformity, thereby improving the existing problem of poor film uniformity. In addition, the vacuum coating apparatus of the present invention can also use the substrate to reduce the volume of the reaction space for the film formation reaction, so that the coating rate can be increased.

以下將參照相關圖式,說明依本發明較佳實施例之氣體分配模組與真空鍍膜裝置,其中相同的元件將以相同的參照符號加以說明。The gas distribution module and the vacuum coating device according to the preferred embodiments of the present invention will be described below with reference to the related drawings, wherein the same components will be described with the same reference symbols.

請參照圖2至圖3B所示,其中,圖2為本發明一實施例之一種真空鍍膜裝置的示意圖,圖3A為圖2的真空鍍膜裝置中,氣體分配模組之噴頭單元的局部示意圖,而圖3B為圖2的真空鍍膜裝置中,噴頭固定單元之一橫截面示意圖。Please refer to FIGS. 2 to 3B , wherein FIG. 2 is a schematic diagram of a vacuum coating device according to an embodiment of the present invention, and FIG. 3A is a partial schematic diagram of the shower head unit of the gas distribution module in the vacuum coating device of FIG. 2 , 3B is a schematic cross-sectional view of one of the nozzle fixing units in the vacuum coating apparatus of FIG. 2 .

真空鍍膜裝置2與一基板W配合應用。基板W為具有曲面或高低起伏等不規則形狀的一曲面基板,其具有至少一曲面W1。本實施例之基板W的曲面W1是一個弧形表面,當然,在不同的實施例中,曲面W1也可包括多個弧形表面的組合(多個曲面的組合)、或包括高低起伏等不規則形狀、或其組合。在一些實施例中,基板W為可透光或不可透光材料製成,例如藍寶石(Sapphire)基材、砷化鎵(GaAs)基材、或碳化矽(SiC)基材,並不限制。在一些實施例中,基板W上可具有膜層。The vacuum coating device 2 is used in conjunction with a substrate W. The substrate W is a curved substrate having irregular shapes such as curved surfaces or high and low undulations, and has at least one curved surface W1. The curved surface W1 of the substrate W in this embodiment is an arc-shaped surface. Of course, in different embodiments, the curved surface W1 may also include a combination of multiple arc-shaped surfaces (combination of multiple curved surfaces), or include different heights such as undulations. Regular shape, or a combination thereof. In some embodiments, the substrate W is made of a light-transmitting or non-light-transmitting material, such as a sapphire (Sapphire) substrate, a gallium arsenide (GaAs) substrate, or a silicon carbide (SiC) substrate, without limitation. In some embodiments, the substrate W may have a film layer thereon.

如圖2所示,真空鍍膜裝置2包括一真空腔體21、一噴頭固定單元22、一氣體分配模組23以及一加熱單元24。另外,本實施例之真空鍍膜裝置2更可包括一進氣歧管單元25、一進氣通道26及一排氣通道27。As shown in FIG. 2 , the vacuum coating device 2 includes a vacuum chamber 21 , a nozzle fixing unit 22 , a gas distribution module 23 and a heating unit 24 . In addition, the vacuum coating device 2 of this embodiment may further include an intake manifold unit 25 , an intake passage 26 and an exhaust passage 27 .

真空腔體21具有一側壁部211,基板W設置於側壁部211上。於此,是以真空腔體21的側壁部211作為基板W的承載機構。另外,本實施例之真空腔體21更包括與側壁部211連接之一底部212,且真空腔體21是由基板W、側壁部211及底部212所構成。換句話說,本實施例是使基板W1蓋合在真空腔體21的側壁部211上,以將基板W1視為真空腔體21的一部分。為了使基板W與側壁部211可以密合,基板W與側壁部211之間可具有一密封件O1,密封件O1例如但不限於O型環,藉此避免形成真空時,外界氣體進入真空腔體21內部而干擾製程。The vacuum chamber 21 has a side wall portion 211 , and the substrate W is disposed on the side wall portion 211 . Here, the side wall portion 211 of the vacuum chamber 21 is used as a supporting mechanism for the substrate W. As shown in FIG. In addition, the vacuum chamber 21 of this embodiment further includes a bottom portion 212 connected to the side wall portion 211 , and the vacuum chamber body 21 is composed of the substrate W, the side wall portion 211 and the bottom portion 212 . In other words, in this embodiment, the substrate W1 is covered on the side wall portion 211 of the vacuum chamber 21 , so that the substrate W1 is regarded as a part of the vacuum chamber 21 . In order to make the substrate W and the side wall portion 211 closely adhered, a sealing member O1 may be provided between the substrate W and the side wall portion 211. The sealing member O1 is, for example, but not limited to, an O-ring, so as to prevent the outside gas from entering the vacuum chamber when a vacuum is formed. inside the body 21 to interfere with the process.

噴頭固定單元22顧名思義是用以固定氣體分配模組(的噴頭單元)。噴頭固定單元22設置於真空腔體21的側壁部211,且側壁部211分別與噴頭固定單元22及基板W連接以形成一反應空間R。於此,噴頭固定單元22是設置於側壁部211遠離基板W的一側,而側壁部211、噴頭固定單元22及基板W共同圍設成反應空間R,反應空間R就是反應物(例如反應前驅物)進入真空腔體21之後,與基板W進行化學反應或/及化學分解來產生待沉積薄膜的處理空間。The shower head fixing unit 22 is used for fixing the gas distribution module (the shower head unit) as the name suggests. The shower head fixing unit 22 is disposed on the side wall portion 211 of the vacuum chamber 21 , and the side wall portion 211 is respectively connected with the shower head fixing unit 22 and the substrate W to form a reaction space R. Here, the shower head fixing unit 22 is disposed on the side of the side wall portion 211 away from the substrate W, and the side wall portion 211, the shower head fixing unit 22 and the substrate W together form a reaction space R, and the reaction space R is the reactant (for example, a reaction precursor). After entering the vacuum chamber 21, chemical reaction or/and chemical decomposition are carried out with the substrate W to generate a processing space for the thin film to be deposited.

氣體分配模組23設置於噴頭固定單元22,氣體分配模組23包括複數噴頭單元231,該些噴頭單元231透過噴頭固定單元22並排設置於真空腔體21內。如圖2和圖3B所示,噴頭固定單元22具有多個穿孔H,該些噴頭單元231與該些穿孔H對應設置(一對一對應)。另外,該些噴頭單元231分別穿設該些穿孔H,並與該些穿孔H可移動地緊密配合,藉此透過噴頭固定單元22調整(移動)及固定該些噴頭單元231與基板W之曲面W1間的距離,進而調整及固定該些噴頭單元231於真空腔體21的位置,並且產生氣密效果,避免反應空間R的氣體往底部212的方向洩露出。The gas distribution module 23 is disposed on the shower head fixing unit 22 . The gas distribution module 23 includes a plurality of shower head units 231 , and the shower head units 231 are arranged side by side in the vacuum chamber 21 through the shower head fixing unit 22 . As shown in FIG. 2 and FIG. 3B , the nozzle fixing unit 22 has a plurality of through holes H, and the nozzle units 231 are arranged corresponding to the through holes H (one-to-one correspondence). In addition, the nozzle units 231 respectively pass through the through holes H, and are movably closely matched with the through holes H, thereby adjusting (moving) and fixing the nozzle units 231 and the curved surface of the substrate W through the nozzle fixing unit 22 The distance between W1 further adjusts and fixes the positions of the shower head units 231 in the vacuum chamber 21 , and produces an airtight effect to prevent the gas in the reaction space R from leaking out in the direction of the bottom 212 .

由於噴頭單元231穿設噴頭固定單元22之對應穿孔H,因此,噴頭固定單元22之穿孔H的位置將決定噴頭單元231的排列方式。舉例來說,如圖3B所示,為了達到比較密集的設置,本實施例的噴頭固定單元22之該些穿孔H是以蜂巢狀方式排列,使該些噴頭單元231同樣也以蜂巢狀的方式排列。當然,噴頭固定單元22之該些穿孔H或該些噴頭單元231也可以是其他排列方式,本發明不限制,可依據在基板W形成膜層的需求而調整排列方式,本發明不限制。Since the nozzle unit 231 passes through the corresponding through holes H of the nozzle fixing unit 22 , the position of the through holes H of the nozzle fixing unit 22 will determine the arrangement of the nozzle units 231 . For example, as shown in FIG. 3B , in order to achieve a relatively dense arrangement, the through holes H of the nozzle fixing unit 22 of the present embodiment are arranged in a honeycomb manner, so that the nozzle units 231 are also arranged in a honeycomb manner. arrangement. Of course, the through holes H of the showerhead fixing unit 22 or the showerhead units 231 can also be arranged in other ways, which are not limited in the present invention, and the arrangement can be adjusted according to the requirements of forming a film layer on the substrate W, which is not limited in the present invention.

如圖3A所示,每一個噴頭單元231包括一噴頭231a及與噴頭231a連接之一導管231b,噴頭231a具有多個出氣孔h,而導管231b具有一流道C1,且導管231b的流道C1與噴頭231a的該些出氣孔h彼此連通,因此,反應物可以經由噴頭單元231之導管231b的流道C1由該些出氣孔h噴出,以均勻地分佈在基板W的曲面W1上,同時使形成之薄膜的均勻性較好。本實施例的該些噴頭231a皆位於反應空間R,而該些導管231b的一部分也位於反應空間R,但該些導管231b的另一部分則位於噴頭固定單元22的穿孔H內。As shown in FIG. 3A, each nozzle unit 231 includes a nozzle 231a and a conduit 231b connected to the nozzle 231a, the nozzle 231a has a plurality of air outlet holes h, and the conduit 231b has a flow channel C1, and the flow channel C1 of the conduit 231b is connected to The air outlet holes h of the shower head 231a are connected to each other, so the reactants can be ejected from the air outlet holes h through the flow channel C1 of the conduit 231b of the shower head unit 231, so as to be evenly distributed on the curved surface W1 of the substrate W, and at the same time, the formation of The uniformity of the film is better. The nozzles 231a in this embodiment are all located in the reaction space R, and a part of the conduits 231b are also located in the reaction space R, but another part of the conduits 231b is located in the through hole H of the nozzle fixing unit 22 .

請再參照圖2所示,加熱單元24設置於基板W遠離反應空間R的一側。加熱單元24可加熱基板W及真空腔體21,使基板W與反應空間R的溫度可以達到化學反應或/及化學分解的製程所需溫度。與現有設置於真空腔體21內的加熱器來說(如圖1),本實施例的加熱單元24設置於基板W遠離反應空間R的一側,因此可避免進入反應空間R的反應前驅物或其他氣體汙染加熱單元24。在一些實施例中,加熱單元24可例如但不限於為紅外線或電熱加熱器。在一些實施例中,當加熱單元24加熱時,可利用例如反射件將遠離基板W的熱能再反射回基板W,藉此提高加熱效率。反射件例如但不限於為反射鏡、反射片或反射膜層,其可將遠離基板W的熱能再反射回基板W。Referring to FIG. 2 again, the heating unit 24 is disposed on the side of the substrate W away from the reaction space R. As shown in FIG. The heating unit 24 can heat the substrate and the vacuum chamber 21, so that the temperature of the substrate W and the reaction space R can reach the temperature required for the chemical reaction or/and the chemical decomposition process. Compared with the existing heaters disposed in the vacuum chamber 21 (as shown in FIG. 1 ), the heating unit 24 of the present embodiment is disposed on the side of the substrate W away from the reaction space R, so that the reaction precursors entering the reaction space R can be avoided. or other gases contaminate the heating unit 24 . In some embodiments, the heating unit 24 may be, for example, but not limited to, an infrared or electrothermal heater. In some embodiments, when the heating unit 24 is heated, the heat energy away from the substrate W may be reflected back to the substrate W by, for example, a reflector, thereby improving the heating efficiency. The reflective member is, for example, but not limited to, a reflective mirror, a reflective sheet or a reflective film layer, which can reflect the thermal energy away from the substrate W back to the substrate W again.

進氣通道26與排氣通道27分別連接於真空腔體21的側壁部211,且進氣通道26和排氣通道27係透過氣體分配模組23的該些噴頭單元231與反應空間R連通。具體來說,本實施例的進氣通道26連接於側壁部211的一進氣口I,排氣通道27連接於側壁部211的一出氣口O,使得反應物(例如反應前驅物)可由進氣通道26經由噴頭單元231進入反應空間R;並且,為了使進入的反應物可均勻分配在基板W的曲面W1,本實施例利用氣體分配模組23來進行反應物的分配,使進入真空腔體21的反應物可以均勻分配在位於反應空間R的曲面W1,進而使成膜過程可以更均勻。The intake channel 26 and the exhaust channel 27 are respectively connected to the side wall 211 of the vacuum chamber 21 , and the intake channel 26 and the exhaust channel 27 communicate with the reaction space R through the nozzle units 231 of the gas distribution module 23 . Specifically, the air inlet passage 26 of the present embodiment is connected to an air inlet I of the side wall portion 211, and the exhaust passage 27 is connected to an air outlet O of the side wall portion 211, so that the reactants (eg, reaction precursors) can be fed by the inlet. The gas channel 26 enters the reaction space R through the shower head unit 231; and, in order to make the incoming reactants evenly distributed on the curved surface W1 of the substrate W, the present embodiment uses the gas distribution module 23 to distribute the reactants, so that the reactants enter the vacuum chamber The reactants of the body 21 can be evenly distributed on the curved surface W1 located in the reaction space R, so that the film formation process can be more uniform.

另外,進氣歧管單元25設置於側壁部211,並與噴頭固定單元22連接。本實施例的噴頭固定單元22是透過鎖固件T(例如螺絲)與進氣歧管單元25鎖合連接後,與側壁部211緊密連接,使進氣歧管單元25位於側壁部211、噴頭固定單元22及底部212之間。在此,噴頭固定單元22與進氣歧管單元25之間可具有多個密封件O2(例如但不限於O型環),並且該些密封件O2與噴頭固定單元22的該些穿孔H對應設置(一對一對應)。換句話說,當各噴頭單元231插入噴頭固定單元22的對應穿孔H,為了可調整(移動)且固定各噴頭單元231在噴頭固定單元22的設置位置,本實施例是透過該些密封件O2使噴頭單元231可與穿孔H緊密配合,其中,當噴頭單元231(的導管231b)在穿孔H內移動而到一位置時,密封件O2除了具有固定噴頭單元231(導管231b)之位置的功能外,還可產生氣密作用,避免反應空間R內的氣體由噴頭固定單元22的穿孔H洩露出。In addition, the intake manifold unit 25 is provided on the side wall portion 211 and is connected to the nozzle fixing unit 22 . The nozzle fixing unit 22 of this embodiment is locked and connected to the intake manifold unit 25 through a fastener T (such as a screw), and then tightly connected to the side wall portion 211, so that the intake manifold unit 25 is located on the side wall portion 211, and the nozzle is fixed. between the unit 22 and the bottom 212 . Here, there may be a plurality of sealing members O2 (such as but not limited to O-rings) between the nozzle fixing unit 22 and the intake manifold unit 25 , and the sealing members O2 correspond to the through holes H of the nozzle fixing unit 22 settings (one-to-one correspondence). In other words, when each nozzle unit 231 is inserted into the corresponding hole H of the nozzle fixing unit 22 , in order to adjust (move) and fix the setting position of each nozzle unit 231 on the nozzle fixing unit 22 , in this embodiment, the sealing elements O2 are passed through. The nozzle unit 231 can be closely matched with the through hole H, wherein when the nozzle unit 231 (the duct 231b) moves to a position in the through hole H, the seal O2 has the function of fixing the position of the nozzle unit 231 (the duct 231b) in addition to In addition, an airtight effect can also be produced to prevent the gas in the reaction space R from leaking out of the through holes H of the nozzle fixing unit 22 .

本實施例之進氣歧管單元25包括多個進氣歧管251及一氣體注入空間S。該些進氣歧管251之間可形成多個歧管流道C2,該些歧管流道C2與該些導管231b之該些流道C1對應設置(一對一對應且連通),而前述之密封件O2的數量與歧管流道C2的數量相同。另外,氣體注入空間S位於進氣歧管251(及歧管流道C2)的下側,並位於進氣歧管251與進氣歧管單元25之底部之間,並且氣體注入空間S與該些歧管流道C2連通,反應物可由側壁部211的進氣口I進入氣體注入空間S並流入該些歧管流道C2。詳細來說,本實施例的進氣歧管單元25的氣體注入空間S經由該些歧管流道C2、該些噴頭單元231的該些流道C1及各噴頭231a的該些出氣孔h與反應空間R連通,因此,當反應物進入氣體注入空間S後,可經由該些歧管流道C2、該些噴頭單元231的該些流道C1及各噴頭231a的該些出氣孔h噴出,而與基板W的曲面W1進行成膜反應,反應之後,反應空間R內多餘的反應物及/或副產物可經由該些噴頭單元231的間隙由側壁部211的出氣口O排出。The intake manifold unit 25 of this embodiment includes a plurality of intake manifolds 251 and a gas injection space S. A plurality of manifold flow passages C2 may be formed between the intake manifolds 251 , and the manifold flow passages C2 and the flow passages C1 of the conduits 231b are correspondingly disposed (one-to-one correspondence and communication), and the aforementioned The number of seals O2 is the same as the number of manifold runners C2. In addition, the gas injection space S is located on the lower side of the intake manifold 251 (and the manifold flow channel C2 ), and is located between the intake manifold 251 and the bottom of the intake manifold unit 25 , and the gas injection space S is connected to the The manifold flow channels C2 communicate with each other, and the reactants can enter the gas injection space S through the air inlet I of the side wall portion 211 and flow into the manifold flow channels C2. In detail, the gas injection space S of the intake manifold unit 25 of the present embodiment passes through the manifold flow channels C2, the flow channels C1 of the shower head units 231, and the air outlet holes h of the shower heads 231a and The reaction space R is connected, therefore, when the reactant enters the gas injection space S, it can be ejected through the manifold flow channels C2, the flow channels C1 of the shower head units 231 and the air outlet holes h of the shower heads 231a, The film formation reaction is performed with the curved surface W1 of the substrate W. After the reaction, the excess reactants and/or by-products in the reaction space R can be discharged from the gas outlet O of the side wall portion 211 through the gaps of the shower head units 231 .

在一些實施例中,在進行成膜反應之前,可利用一排氣單元(圖未繪示,例如真空泵浦)並透過排氣通道27將反應空間R的氣體排出。在一些製程中,加熱單元24可加熱基板W而使基板W與反應空間R的溫度上升至反應所需溫度,反應物(反應前驅物)可由進氣通道26通過進氣歧管單元25、氣體分配模組23進入反應空間R且均勻分配至基板W的曲面W1,使反應物可與基板W進行化學反應或/及化學分解,之後再透過排氣單元將反應空間R多餘的反應物及/或副產物由該些噴頭單元231的間隙經由排氣通道27排出。在一些實施例中,在反應物進入反應空間R且進行化學反應或/及化學分解之後,反應空間R內可能還有多餘的反應物及/或副產物,可利用不反應物(例如惰性氣體,如氮氣或氬氣)由進氣通道26經由進氣歧管單元25、氣體分配模組23進入反應空間R,並經由排氣通道27排出,除了可吹掃多餘的反應物及副產物外,更可控制進入之不反應物的流量來控制基板W及反應空間R的溫度,以提高基板W及反應空間R的降溫速率(例如流量大,降溫速率較快)。In some embodiments, before the film formation reaction is performed, an exhaust unit (not shown, such as a vacuum pump) may be used to exhaust the gas in the reaction space R through the exhaust channel 27 . In some processes, the heating unit 24 can heat the substrate W to increase the temperature of the substrate W and the reaction space R to a temperature required for the reaction, and the reactants (reaction precursors) can pass through the intake manifold unit 25 through the intake channel 26 , the gas The distribution module 23 enters the reaction space R and evenly distributes it to the curved surface W1 of the substrate W, so that the reactants can be chemically reacted or/and chemically decomposed with the substrate W, and then the excess reactants and/or excess reactants in the reaction space R are discharged through the exhaust unit. Or by-products are discharged from the gaps of the shower head units 231 through the exhaust passage 27 . In some embodiments, after the reactants enter the reaction space R and undergo chemical reaction or/and chemical decomposition, there may be excess reactants and/or by-products in the reaction space R, and non-reactants (such as inert gas) may be used. , such as nitrogen or argon) from the intake channel 26 through the intake manifold unit 25, the gas distribution module 23 into the reaction space R, and exhausted through the exhaust channel 27, in addition to purging excess reactants and by-products , the flow rate of the incoming non-reactive substances can be controlled to control the temperature of the substrate and the reaction space R, so as to improve the cooling rate of the substrate and the reaction space R (for example, the flow rate is large, and the cooling rate is faster).

特別提醒的是,在本實施例中,進氣歧管單元25在沿側壁部211的一延伸方向D上的厚度d正相關於曲面W1之高低起伏的上下限。換句話說,進氣歧管單元25的該厚度d可決定曲面W1之高低起伏的上下限,厚度d越大者,則基板W之曲面W1的高低起伏的上下限則可以越大。It should be noted that, in this embodiment, the thickness d of the intake manifold unit 25 along an extension direction D of the side wall portion 211 is positively related to the upper and lower limits of the undulations of the curved surface W1. In other words, the thickness d of the intake manifold unit 25 can determine the upper and lower limits of the undulations of the curved surface W1 .

承上,為了使具有曲面W1之基板W的成膜可以更均勻,氣體分配模組23的該些噴頭單元231的配置需與基板W的曲面W1形狀相互配合。具體來說,為了使曲面W1上形成的薄膜具有好的均勻性,本實施例之氣體分配模組23的該些噴頭單元231於真空腔體21的設置位置係依據基板W之曲面W1的形狀變化而改變。在此,當噴頭單元231穿過且固定在噴頭固定單元22的穿孔H的過程中,可依據基板W之曲面W1的形狀變化而調整(移動)每一個噴頭單元231與對應曲面W1位置間的距離,進而調整每一個噴頭單元231與噴頭固定單元22的相對位置,藉此改變該些噴頭單元231在真空腔體21(或反應空間R)的設置位置,使該些噴頭單元231的該些噴頭231a與曲面W1間的距離實質上皆相等(因設置誤差,各噴頭231a與曲面W1間的距離可能有些許差異,但大體上,所有噴頭231a與曲面W1間的距離實質上都相等)。In addition, in order to make the film formation of the substrate W with the curved surface W1 more uniform, the arrangement of the shower head units 231 of the gas distribution module 23 needs to match the shape of the curved surface W1 of the substrate W. Specifically, in order to make the film formed on the curved surface W1 have good uniformity, the installation positions of the nozzle units 231 of the gas distribution module 23 in the present embodiment in the vacuum chamber 21 are based on the shape of the curved surface W1 of the substrate W. change to change. Here, when the nozzle unit 231 passes through and is fixed to the through hole H of the nozzle fixing unit 22 , the distance between each nozzle unit 231 and the corresponding curved surface W1 can be adjusted (moved) according to the shape change of the curved surface W1 of the substrate W. distance, and then adjust the relative position of each nozzle unit 231 and the nozzle fixing unit 22, thereby changing the setting positions of the nozzle units 231 in the vacuum chamber 21 (or the reaction space R), so that the nozzle units 231 The distances between the nozzles 231a and the curved surface W1 are substantially equal (due to setting errors, the distances between the nozzles 231a and the curved surface W1 may be slightly different, but in general, the distances between all the nozzles 231a and the curved surface W1 are substantially the same).

因此,當應用於不同的曲面基板而有不同的曲面形狀時,本實施例之真空鍍膜裝置2只要依據該曲面形狀的變化而相對調整氣體分配模組23的該些噴頭單元231與噴頭固定單元22的相對位置,即可適用於各種形狀的曲面基板,使曲面基板形成的薄膜的均勻性良好,藉此改善現有技術中,曲面基板形成的薄膜均勻性不佳的問題。另外,由於在真空鍍膜裝置2中,基板W設置於真空腔體21的側壁部211上,且側壁部211分別與噴頭固定單元22及基板W連接以形成反應空間R,因此,是利用基板W1來形成反應空間R(基板W1可視為真空腔體21的一部分),藉此,可以縮小進行成膜反應之反應空間R的體積,提高鍍膜的速率。Therefore, when applied to different curved substrates with different curved surface shapes, the vacuum coating apparatus 2 of this embodiment only needs to relatively adjust the shower head units 231 and the shower head fixing units of the gas distribution module 23 according to the change of the curved surface shape The relative position of 22 can be suitable for curved substrates of various shapes, so that the uniformity of the thin film formed on the curved substrate is good, thereby improving the problem of poor uniformity of the thin film formed on the curved substrate in the prior art. In addition, in the vacuum coating apparatus 2, the substrate W is disposed on the side wall portion 211 of the vacuum chamber 21, and the side wall portion 211 is respectively connected to the shower head fixing unit 22 and the substrate W to form the reaction space R, therefore, the substrate W1 is used To form a reaction space R (the substrate W1 can be regarded as a part of the vacuum chamber 21 ), the volume of the reaction space R for the film formation reaction can be reduced, and the film deposition rate can be improved.

圖4為本發明之真空鍍膜裝置與不同基板配合應用的示意圖,而圖5為本發明不同實施例之真空鍍膜裝置的示意圖。FIG. 4 is a schematic diagram of the application of the vacuum coating apparatus of the present invention with different substrates, and FIG. 5 is a schematic diagram of the vacuum coating apparatus of different embodiments of the present invention.

如圖4所示,本實施例的真空鍍膜裝置2a與前述實施例的真空鍍膜裝置2其元件組成及各元件的連接關係大致相同。不同之處在於,本實施例之基板Wa的曲面W1形狀與真空鍍膜裝置2中的基板W不同。在此,基板Wa的曲面W1形狀包括上下起伏的連續多個曲面(多個弧形表面的組合),因此,本實施例之氣體分配模組23的該些噴頭單元231的配置與基板Wa的曲面W1形狀相互配合。換句話說,為了上下起伏之基板Wa的曲面W1的成膜過程可以更均勻,本實施例之氣體分配模組23的各噴頭單元231根據基板Wa的曲面W1形狀在各穿孔H中移動,使各噴頭單元231於真空腔體21的設置位置依據上下起伏之基板Wa的曲面W1的形狀變化而改變,進而使該些噴頭單元231的該些噴頭231a與基板Wa的曲面W1間的距離實質上皆相等。As shown in FIG. 4 , the vacuum coating device 2 a of the present embodiment is substantially the same as the vacuum coating device 2 of the previous embodiment in terms of the component composition and the connection relationship between the components. The difference is that the shape of the curved surface W1 of the substrate Wa in this embodiment is different from that of the substrate W in the vacuum coating apparatus 2 . Here, the shape of the curved surface W1 of the substrate Wa includes a plurality of continuous curved surfaces (combination of a plurality of curved surfaces) undulating up and down. Therefore, the configuration of the shower head units 231 of the gas distribution module 23 of this embodiment is the same as that of the substrate Wa. The shapes of the curved surfaces W1 are matched with each other. In other words, in order to make the film formation process of the curved surface W1 of the undulating substrate Wa more uniform, each shower head unit 231 of the gas distribution module 23 of this embodiment moves in each of the through holes H according to the shape of the curved surface W1 of the substrate Wa, so that the The installation position of each shower head unit 231 in the vacuum chamber 21 is changed according to the shape change of the curved surface W1 of the substrate Wa that is undulating up and down, so that the distance between the shower heads 231a of the shower head units 231 and the curved surface W1 of the substrate Wa is substantially All are equal.

另外,如圖5所示,本實施例的真空鍍膜裝置2b與前述實施例的真空鍍膜裝置2其元件組成及各元件的連接關係大致相同。不同之處在於,在本實施例的真空鍍膜裝置2b中,真空腔體21b更具有一頂部213,基板W位於頂部213與氣體分配模組23之間,且加熱單元24位於頂部213與基板W之間。在不同的實施例中,加熱單元24也可位於頂部213遠離基板W的一側(即頂部213的上側),本發明不限制。真空腔體21b具有頂部213的特徵也可應用於本發明其他的實施例中。In addition, as shown in FIG. 5 , the vacuum coating device 2 b of the present embodiment is substantially the same as the vacuum coating device 2 of the previous embodiment in terms of the component composition and the connection relationship between the components. The difference is that in the vacuum coating apparatus 2b of this embodiment, the vacuum chamber 21b further has a top 213, the substrate W is located between the top 213 and the gas distribution module 23, and the heating unit 24 is located between the top 213 and the substrate W between. In different embodiments, the heating unit 24 may also be located on the side of the top portion 213 away from the substrate W (ie, the upper side of the top portion 213 ), which is not limited in the present invention. The feature that the vacuum chamber 21b has the top 213 can also be applied to other embodiments of the present invention.

綜上所述,在本發明應用於真空鍍膜裝置的氣體分配模組與真空鍍膜裝置中,基板設置於真空腔體的側壁部上,且真空腔體的側壁部分別與噴頭固定單元及基板連接以形成反應空間;氣體分配模組的該些噴頭單元透過噴頭固定單元並排設置於真空腔體內,且噴頭單元的噴頭位於反應空間;加熱單元設置於基板遠離反應空間的一側;其中,基板包括面向該些噴頭之曲面,該些噴頭單元於真空腔體的設置位置係依據曲面的形狀變化而改變。藉此,相較於現有之真空鍍膜裝置而言,當應用於不同的曲面基板而有不同的曲面形狀時,本發明只要依據該曲面形狀的變化而相對調整氣體分配模組的該些噴頭單元與噴頭固定單元的相對位置,即可適用於各種形狀的曲面基板,同時可使曲面基板具有良好的薄膜均勻性,藉此改善現有薄膜均勻性不佳的問題。另外,本發明的真空鍍膜裝置還可利用基板來縮小進行成膜反應之反應空間的體積,因此可以提高鍍膜的速率。To sum up, in the gas distribution module and the vacuum coating device of the present invention applied to the vacuum coating device, the substrate is disposed on the side wall of the vacuum chamber, and the side wall of the vacuum chamber is respectively connected to the shower head fixing unit and the substrate to form a reaction space; the nozzle units of the gas distribution module are arranged side by side in the vacuum chamber through the nozzle fixing unit, and the nozzles of the nozzle units are located in the reaction space; the heating unit is arranged on the side of the substrate away from the reaction space; wherein, the substrate includes Facing the curved surfaces of the nozzles, the arrangement positions of the nozzle units in the vacuum chamber are changed according to the shape of the curved surfaces. Therefore, compared with the existing vacuum coating device, when applied to different curved substrates with different curved surface shapes, the present invention only needs to relatively adjust the shower head units of the gas distribution module according to the change of the curved surface shape The relative position of the nozzle fixing unit can be applied to curved substrates of various shapes, and at the same time, the curved substrates can have good film uniformity, thereby improving the existing problem of poor film uniformity. In addition, the vacuum coating apparatus of the present invention can also use the substrate to reduce the volume of the reaction space for the film formation reaction, so that the coating rate can be increased.

以上所述僅為舉例性,而非為限制性者。任何未脫離本發明之精神與範疇,而對其進行之等效修改或變更,均應包含於後附之申請專利範圍中。The above description is exemplary only, not limiting. Any equivalent modifications or changes that do not depart from the spirit and scope of the present invention shall be included in the appended patent application scope.

1,2,2a,2b:真空鍍膜裝置 11,21,21b:真空腔體 12:承載台 13,26:進氣通道 14:氣體分配器 15:加熱器 211:側壁部 212:底部 213:頂部 22:噴頭固定單元 23:氣體分配模組 231:噴頭單元 231a:噴頭 231b:導管 24:加熱單元 25:進氣歧管單元 251:進氣歧管 27:排氣通道 C1:流道 C2:歧管流道 d:厚度 D:延伸方向 h:出氣孔 H:穿孔 I:進氣口 O:出氣口 O1,O2:密封件 R:反應空間 S:氣體注入空間 T:鎖固件 W,Wa:基板 W1:曲面 1, 2, 2a, 2b: Vacuum coating device 11, 21, 21b: Vacuum chamber 12: Bearing platform 13,26: Intake channel 14: Gas distributor 15: Heater 211: side wall 212: Bottom 213: Top 22: Nozzle fixing unit 23: Gas distribution module 231: Nozzle unit 231a: Sprinkler 231b: Catheter 24: Heating unit 25: Intake manifold unit 251: intake manifold 27: Exhaust channel C1: runner C2: Manifold runner d: thickness D: extension direction h: vent hole H: perforated I: Air intake O: air outlet O1,O2: Seals R: reaction space S: Gas injection space T: lock firmware W, Wa: substrate W1: Surface

圖1為現有一種真空鍍膜裝置的示意圖。 圖2為本發明一實施例之一種真空鍍膜裝置的示意圖。 圖3A為圖2的真空鍍膜裝置中,氣體分配模組之噴頭單元的局部示意圖。 圖3B為圖2的真空鍍膜裝置中,噴頭固定單元之一橫截面示意圖。 圖4為本發明之真空鍍膜裝置與不同基板配合應用的示意圖。 圖5為本發明不同實施例之真空鍍膜裝置的示意圖。 FIG. 1 is a schematic diagram of a conventional vacuum coating device. FIG. 2 is a schematic diagram of a vacuum coating apparatus according to an embodiment of the present invention. FIG. 3A is a partial schematic view of the shower head unit of the gas distribution module in the vacuum coating apparatus of FIG. 2 . FIG. 3B is a schematic cross-sectional view of one of the nozzle fixing units in the vacuum coating apparatus of FIG. 2 . FIG. 4 is a schematic diagram of the cooperating application of the vacuum coating device of the present invention with different substrates. 5 is a schematic diagram of a vacuum coating apparatus according to different embodiments of the present invention.

2:真空鍍膜裝置 2: Vacuum coating device

21:真空腔體 21: Vacuum chamber

211:側壁部 211: side wall

212:底部 212: Bottom

22:噴頭固定單元 22: Nozzle fixing unit

23:氣體分配模組 23: Gas distribution module

231:噴頭單元 231: Nozzle unit

231a:噴頭 231a: Sprinkler

231b:導管 231b: Catheter

24:加熱單元 24: Heating unit

25:進氣歧管單元 25: Intake manifold unit

251:進氣歧管 251: intake manifold

26:進氣通道 26: Intake channel

27:排氣通道 27: Exhaust channel

C1:流道 C1: runner

C2:歧管流道 C2: Manifold runner

d:厚度 d: thickness

D:延伸方向 D: extension direction

h:出氣孔 h: vent hole

H:穿孔 H: perforated

I:進氣口 I: Air intake

O:出氣口 O: air outlet

O1,O2:密封件 O1,O2: Seals

R:反應空間 R: reaction space

S:氣體注入空間 S: Gas injection space

T:鎖固件 T: lock firmware

W:基板 W: substrate

W1:曲面 W1: Surface

Claims (17)

一種應用於真空鍍膜裝置之氣體分配模組,其與一基板配合應用,該氣體分配模組包括: 複數噴頭單元,並排設置於該真空鍍膜裝置的一真空腔體內,每一個該噴頭單元包括一噴頭; 其中,該基板包括面向該些噴頭之一曲面,該些噴頭單元於該真空腔體的設置位置係依據該基板之該曲面的形狀變化而改變。 A gas distribution module applied to a vacuum coating device, which is used in conjunction with a substrate, the gas distribution module comprising: A plurality of spray head units are arranged side by side in a vacuum chamber of the vacuum coating device, and each of the spray head units includes a spray head; Wherein, the substrate includes a curved surface facing the nozzles, and the arrangement positions of the nozzle units in the vacuum chamber are changed according to the shape of the curved surface of the substrate. 如請求項1所述的氣體分配模組,其中該些噴頭與該曲面間的距離實質上皆相等。The gas distribution module of claim 1, wherein the distances between the nozzles and the curved surface are substantially equal. 如請求項1所述的氣體分配模組,其中該噴頭具有多個出氣孔,該噴頭單元更包括與該噴頭連接之一導管,該導管具有一流道,該流道與該些出氣孔彼此連通。The gas distribution module of claim 1, wherein the shower head has a plurality of air outlet holes, the shower head unit further comprises a conduit connected with the shower head, the conduit has a flow channel, and the flow channel and the air outlet holes communicate with each other . 如請求項1所述的氣體分配模組,其中,係將該基板視為該真空腔體的一部分。The gas distribution module of claim 1, wherein the substrate is regarded as a part of the vacuum chamber. 一種真空鍍膜裝置,與一基板配合應用,該真空鍍膜裝置包括: 一真空腔體,具有一側壁部,該基板設置於該側壁部上; 一噴頭固定單元,設置於該側壁部,且該側壁部分別與該噴頭固定單元及該基板連接以形成一反應空間; 一氣體分配模組,包括複數噴頭單元,該些噴頭單元透過該噴頭固定單元並排設置於該真空腔體內,且每一個該噴頭單元包括一噴頭,該些噴頭位於該反應空間;以及 一加熱單元,設置於該基板遠離該反應空間的一側; 其中,該基板包括面向該些噴頭之一曲面,該些噴頭單元於該真空腔體的設置位置係依據該曲面的形狀變化而改變。 A vacuum coating device is used in cooperation with a substrate, and the vacuum coating device comprises: a vacuum chamber having a side wall on which the substrate is disposed; a shower head fixing unit disposed on the side wall portion, and the side wall portion is respectively connected with the shower head fixing unit and the substrate to form a reaction space; a gas distribution module including a plurality of showerhead units, the showerhead units are arranged side by side in the vacuum chamber through the showerhead fixing unit, and each of the showerhead units includes a showerhead, and the showerheads are located in the reaction space; and a heating unit, disposed on the side of the substrate away from the reaction space; Wherein, the substrate includes a curved surface facing the nozzles, and the arrangement positions of the nozzle units in the vacuum chamber are changed according to the shape of the curved surface. 如請求項5所述的真空鍍膜裝置,其中,係調整該些噴頭單元與該噴頭固定單元的相對位置,以改變該些噴頭單元在該真空腔體的設置位置。The vacuum coating device according to claim 5, wherein the relative positions of the spray head units and the spray head fixing unit are adjusted to change the arrangement positions of the spray head units in the vacuum chamber. 如請求項5所述的真空鍍膜裝置,其中該些噴頭與該曲面間的距離實質上皆相等。The vacuum coating device according to claim 5, wherein the distances between the nozzles and the curved surface are substantially equal. 如請求項5所述的真空鍍膜裝置,其中該噴頭固定單元具有多個穿孔,該些噴頭單元分別穿設該些穿孔,並與該些穿孔可移動地緊密配合。The vacuum coating device according to claim 5, wherein the shower head fixing unit has a plurality of through holes, the shower head units respectively pass through the through holes, and are movably closely matched with the through holes. 如請求項8所述的真空鍍膜裝置,其中該噴頭固定單元之該些穿孔或該些噴頭單元以蜂巢狀方式排列。The vacuum coating device according to claim 8, wherein the through holes of the shower head fixing unit or the shower head units are arranged in a honeycomb-like manner. 如請求項5所述的真空鍍膜裝置,其中,一反應物由該側壁部之一進氣口經由該些噴頭單元進入該反應空間,且經由該些噴頭單元的間隙由該側壁部的一出氣口離開該反應空間。The vacuum coating device according to claim 5, wherein a reactant enters the reaction space from an air inlet of the side wall portion through the shower head units, and passes through an outlet of the side wall portion through the gaps of the shower head units. The gas port leaves the reaction space. 如請求項5所述的真空鍍膜裝置,其中該噴頭具有多個出氣孔,該噴頭單元更包括與該噴頭連接之一導管,該導管具有一流道,該流道與該些出氣孔彼此連通。The vacuum coating device according to claim 5, wherein the shower head has a plurality of air outlet holes, the shower head unit further comprises a conduit connected with the shower head, the conduit has a flow channel, and the flow channel and the air outlet holes communicate with each other. 如請求項11所述的真空鍍膜裝置,更包括: 一進氣歧管單元,設置於該側壁部,並與該噴頭固定單元連接,該進氣歧管單元包括一氣體注入空間,一反應物由該側壁部之一進氣口進入該氣體注入空間。 The vacuum coating device according to claim 11, further comprising: An intake manifold unit is disposed on the side wall portion and connected to the nozzle fixing unit, the intake manifold unit includes a gas injection space, and a reactant enters the gas injection space through an air inlet of the side wall portion . 如請求項12所述的真空鍍膜裝置,其中該進氣歧管單元更包括多個歧管流道,該些歧管流道與該氣體注入空間連通,且該氣體注入空間經由該些歧管流道、該些噴頭單元的該些流道及各該噴頭的該些出氣孔與該反應空間連通。The vacuum coating device according to claim 12, wherein the intake manifold unit further comprises a plurality of manifold flow channels, the manifold flow channels communicate with the gas injection space, and the gas injection space passes through the manifolds The flow channels, the flow channels of the nozzle units and the air outlet holes of the nozzles are communicated with the reaction space. 如請求項13所述的真空鍍膜裝置,其中該些歧管流道與該些導管之該些流道對應設置。The vacuum coating device according to claim 13, wherein the manifold flow channels are arranged corresponding to the flow channels of the conduits. 如請求項12所述的真空鍍膜裝置,其中該噴頭固定單元具有多個穿孔,該噴頭固定單元與該進氣歧管單元之間具有多個密封件,該些密封件與該些穿孔對應設置。The vacuum coating device according to claim 12, wherein the shower head fixing unit has a plurality of perforations, a plurality of sealing members are arranged between the shower head fixing unit and the intake manifold unit, and the sealing members are arranged corresponding to the through holes . 如請求項12所述的真空鍍膜裝置,其中該進氣歧管單元在沿該側壁部的一延伸方向上的厚度正相關於該曲面之高低起伏的上下限。The vacuum coating device according to claim 12, wherein the thickness of the intake manifold unit along an extension direction of the side wall portion is positively related to the upper and lower limits of the undulations of the curved surface. 如請求項5所述的真空鍍膜裝置,其中該真空腔體更具有一頂部,該基板位於該頂部與氣體分配模組之間,且該加熱單元位於該頂部與該基板之間。The vacuum coating device according to claim 5, wherein the vacuum chamber further has a top, the substrate is located between the top and the gas distribution module, and the heating unit is located between the top and the substrate.
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