TW202221953A - Organic thin film transistor having self-contained multiple logic gate functions and manufacturing method thereof capable of realizing a transistor having logic gate functions such as AND and OR at the same time - Google Patents

Abstract

Disclosed are an organic thin film transistor having self-contained multiple logic gate functions and a manufacturing method thereof. A charge modulation layer having an asymmetric structure is introduced into gate dielectric layers of upper and lower sides, so as to produce a dual gate organic thin film transistor, which provides the device with an excellent threshold voltage modulation capability, and having a function of self-contained multiple logic gates, thereby producing multi-functional application potential. In an embodiment of the present invention, a mixed active layer is made of an organic polymer semiconductor and an insulating layer material, and the charge modulation layer is an organic polymer material having polar functional groups. When the device is in operation, these polar functional groups can generate an internal polarization field, thereby achieving a function of charge modulation in upper and lower channels of the element, and this provides the organic double-gate thin film transistor produced according to the present invention with a unique electrical behavior and the above-mentioned multiple functions, such as the threshold voltage modulation factor being as high as 1.3 (theoretical value being less than 0.4), and furthermore, a transistor having logic gate functions such as AND and OR at the same time can be realized. For commercial needs, it can achieve the characteristics of low cost and simple manufacturing.

Description

Organic thin film transistor with self-contained multiple logic gate function and its manufacturing method

The present invention relates to a self-contained organic thin film transistor with multiple logic gate functions and a method for manufacturing the same, in particular to a charge modulation layer with an asymmetric structure, especially to enable the fabricated element to have better electrical properties, Stronger threshold voltage (V _th ) control capability, and those with multiple logic gate functions.

Transistors are not only the basic components of electronic circuits, but also have a wide range of applications around. According to press, the current organic thin film transistor (OTFT) technologies include traditional organic thin film transistors, traditional double-gate organic thin film transistors (DG-OTFT), and the use of multi-component active layers. Double-gate thin-film transistors, which are described as follows:

Traditional organic thin film transistors: only have a single gate, no threshold voltage (threshold voltage) adjustment function, and can not achieve self-contained logic gates (logic gates) function.

Conventional organic double-gate thin film transistor: using a single organic/ The polymer semiconductor material is used as the active layer 24, and the upper and lower dielectric layers 23, 25 are combined to produce an organic double-gate thin film transistor 200 with top and bottom gates 22, 26, as shown in FIG. 5 . The electrical characteristics of the device are controlled by the respective capacitance values of the conventional top and bottom. Since it does not have the asymmetric charge modulation layer in the present invention, its effect is general, and it does not have the function of self-contained multiple logic gates. Therefore, the problem of the prior art and its defects are that the conventional organic double-gate thin film transistor generally exhibits poor current control capability, weak threshold voltage control capability and low switching current ratio.

Dual-Gate Thin Film Transistors Using Multicomponent Active Layers: Using Multicomponent Active Layers to Fabrication of dual-gate thin-film transistors. The electrical characteristics of the device are optimized by the characteristics of the multi-component active layer, enhancing the The critical voltage control capability of the component. However, it does not have the asymmetric charge modulation layer in the present invention, nor does it have the function of self-contained multiple logic gates. Therefore, the problem of the prior art and its defects are that the conventional double-gate thin film transistor is only used for the threshold voltage adjustment function in the circuit, without the self-contained logic gate function, the function is relatively simple, and there is no multi-functional operation. capacity, the application is more limited.

In view of the fact that the traditional double-gate device does not have a charge modulation layer with an asymmetric structure, it is impossible to The effect of effectively controlling the carrier concentration distribution in the channel layer of the device is achieved; and, the conventional dual-gate transistor device usually only has a single logic gate operation capability or even no such logic gate function exists. Therefore, the conventional ones cannot meet the needs of users to improve the electrical performance of the organic double-gate thin film transistor and make the device have multiple logic gate functions in actual use.

The main purpose of the present invention is to overcome the above-mentioned problems encountered in the prior art and In addition to improving the electrical properties of organic double-gate thin film transistors, such as current control, driving and switching capabilities, and enabling the device to have multiple logic gate functions, it can solve the poor current control capability of the device, enhance the ability to adjust the threshold voltage position and increase The switching current ratio can mainly increase the current of the device, optimize the position of the threshold voltage and the current switching ratio, and more importantly, can make a single dual-gate device with multiple logic gate functions. Self-contained multiple logic gates Functional organic thin film transistor and method of making the same.

Another object of the present invention is to provide a kind of double gate that can be applied to various fabrications. A type integrated circuit, a self-contained organic thin film transistor with multiple logic gate functions, and a manufacturing method thereof with the characteristics of simple manufacturing process, low temperature, low cost, and rapid manufacturing process.

In order to achieve the above purpose, the present invention is a self-contained organic thin circuit with multiple logic gate functions. The film transistor includes: a substrate; a bottom gate layer arranged on the substrate; a bottom gate dielectric layer arranged on the substrate and the bottom gate layer; an active layer arranged on the bottom The gate dielectric layer is a thin film containing semiconductor materials; a top gate dielectric layer is disposed on the active layer; a top gate layer is disposed on the top gate dielectric layer; and at least one charge The modulation layer, disposed at least one above and below the active layer, has polar functional groups and is an organic polymer material with paraelectricity, ferroelectricity, or solid electrolyte.

In the above embodiments of the present invention, the substrate can be selected from glass, silicon substrate, or flexible substrate.

In the above embodiments of the present invention, the bottom gate dielectric layer completely covers the bottom gate layer.

In the above-mentioned embodiments of the present invention, two charge modulation layers of asymmetric structure are included are respectively arranged above and below the active layer.

In the above-mentioned embodiment of the present invention, the two-layer asymmetric structure type charge modulation layer is Films with different structures of flat type, special columnar or hole structure type are made of different dielectric materials.

In the above-mentioned embodiments of the present invention, the layer or two charge modulation layers can be selected from polypolarized Organic polymer materials of vinyl fluoride, polymer vinylidene fluoride trifluoroethylene copolymer, polymethyl methacrylate, or poly(4-vinylphenol).

In the above embodiments of the present invention, the active layer can be selected from organic semiconductors, inorganic semi- Conductors, multi-component mixed organic semiconductors, organic-inorganic mixed semiconductors, or those mixed with semiconductors and insulating materials.

In the above embodiments of the present invention, the active layer can be selected from poly(3-hexylthiophene) Organic polymer semiconductor materials, or organic insulating materials selected from polymethyl methacrylate or polystyrene.

In the above embodiments of the present invention, the bottom and top gate layers are metal conductors, gold It is an oxide conductor, or a conductive polymer material.

In the above embodiments of the present invention, the metal oxide conductor can be selected from indium tin oxide, And the conductive polymer material can be selected from poly(3,4-ethylenedioxythiophene).

In the above embodiments of the present invention, the bottom and top gate dielectric layers are organic polymers materials, or dielectric materials of inorganic oxides.

In the above embodiments of the present invention, the inorganic oxide can be selected from silicon dioxide, oxide Aluminum, or titanium dioxide, and the organic polymer can be selected from polymethyl methacrylate, polyvinylidene fluoride, polymer vinylidene fluoride trifluoroethylene copolymer, polystyrene, or poly(4-vinylphenol) .

The present invention further relates to a method for manufacturing an organic thin film transistor with multiple logic gate functions. When the device is operated with the above-mentioned device, an internal polarization field can be induced in the charge modulation layers to help adjust the active layer above and below. The charge in the channel is enhanced by the asymmetric structure of the films of the different charge modulation layers above and below, which enhances the regulation of the charge density in the upper and lower channels of the device, so as to achieve the effect of charge enhancement or depletion in the channel. The device has the threshold voltage modulation capability of making the threshold voltage (V _th ) modulation factor as high as 1.3 (theoretical value is less than 0.4), and can realize the self-contained multiple logic gate function of AND and OR simultaneously in one transistor.

Please refer to "Fig. 1 to Fig. 4", which are respectively shown in the present invention with asymmetric Schematic diagram of the structure of the organic double-gate thin film transistor of the structured charge modulation layer, schematic diagrams of different structural types of the charge modulation layer of the present invention, schematic diagram of the control capability of the threshold voltage position of the organic double gate thin film transistor of the present invention, and the present invention Schematic diagram of the operation of an organic double-gate thin film transistor with two different logic gate functions. As shown in the figure: the present invention is a self-contained organic thin film transistor with multiple logic gate functions and a manufacturing method thereof. The proposed organic double gate thin film transistor 100 structure includes a substrate 11; a bottom gate 12, Disposed on the substrate 11; a bottom gate dielectric layer 13 disposed on the substrate 11 and completely covering the bottom gate 12; an active layer 14 disposed on the bottom gate dielectric layer 13; a top A gate dielectric layer 15 disposed on the active layer 14; a top gate 16 disposed on the top gate dielectric layer 15; and at least one charge modulation layer 17 or 18 disposed on the active layer 14 at least one of above and below.

The embodiment of the organic double-gate thin film transistor device 100 according to the present invention is as follows: Down: Embodiment 1: There must be an upper and (or) lower charge modulation layer 17 and (or) 18 embedded in the device, which can be independent of each other, such as the upper or lower layers, or both layers can exist in the device at the same time. efficient. In addition, the materials of the proposed charge modulation layers 17 and 18 need to have polar functional groups, paraelectricity or ferroelectricity and other properties. Embodiment 2: The use of the mixed active layer 14 can help simplify the process steps. The reason is that after the mixed active layer 14 is formed into a film, the phase separation behavior caused by the incompatibility of the materials is used, so that it can be automatically layered to form the active layer. 14 and the lower charge modulation layer 17. Taking FIG. 1 as an example, in this embodiment, a charge modulation layer 17 and 18 are respectively formed above the bottom gate dielectric layer 13 and below the top gate dielectric layer 15, when the device operates in various modes. , which can help to adjust the charge in the upper and lower active layer 14 channels to achieve the effect of charge enhancement or depletion in the channel, so that the fabricated components have better electrical properties, stronger threshold voltage (Vth) control capability, and self- With multiple logic gate function. The upper and lower charge modulation layers 17 and 18 proposed in the present invention can be made of different dielectric materials, which can be flat films or films with special columnar or hole structures. The layers 17 and 18 are thin films with different structures, which are the so-called asymmetric charge modulation layers 17 and 18 in the present invention.

When used, the implementation of fabricating the above-described organic double-gate thin film transistor device 100 The process is as follows: selecting glass, silicon substrate, flexible substrate, or other related substrate materials as the substrate 11 in the organic double-gate thin film transistor element 100 . A bottom gate 12 and a bottom gate dielectric layer 13 are formed on the substrate 11. The bottom gate 12 may be a conventional metal conductor, a metal oxide conductor, or a conductive polymer material. The bottom gate dielectric layer 13 may be Dielectric materials such as organic polymers or inorganic oxides are used. Different from the traditional dual-gate thin film transistor device, the present invention forms a charge modulation layer 17 above the bottom gate dielectric layer 13. The charge modulation layer 17 can be made of organic polymer materials with polar functional groups. It can also be a paraelectric, ferroelectric material or a solid electrolyte material. Next, an active layer 14 is formed on the lower charge modulation layer 17. The active layer 14 is a thin film containing semiconductor materials, and can use organic semiconductors, inorganic semiconductors, multi-component mixed organic semiconductors, organic-inorganic hybrid semiconductors, and other materials. Or use a mixture of semiconductors and insulating materials. After the process of the active layer 14 is completed, the upper charge modulation layer 18, the top gate dielectric layer 15, and the top gate 16 are sequentially formed thereon, and the materials of the upper charge modulation layer 17, the bottom The material used for the gate dielectric layer 13 and the bottom gate 12 .

其中C _BG為底部閘極電容，C _TG為頂部閘極電容，及C _S為半導體電容值。 The following examples are only examples for understanding the details and connotations of the present invention, but are not intended to limit the scope of the patent application of the present invention. [Example] The present invention uses organic polymer semiconductors and organic insulating materials to be mixed as the mixed active layer 14, and simultaneously fabricates an organic double-gate thin film transistor element 100 with double-sided charge modulation layers 17 and 18, which can simplify the the purpose of the process. In this embodiment, the double-sided charge modulation layers 17 and 18 are made of organic polymer materials with polar functional groups and ferroelectric properties. Therefore, the device 100 can induce an internal polarization field in the charge modulation layers 17 and 18 during operation. , thereby regulating the charge density in the element channel layer. Furthermore, the film structure characteristics of the different charge modulation layers 17 and 18 above and below can be further passed through, such as the flat film structure 18a shown in (a) or the columnar film structure shown in (b) in FIG. 2 . 18b, etc., the charge modulation layers 17, 18 of this asymmetric structure can further enhance the regulation of the charge density in the element channel layer. Figure 3 is the experimental result of the embodiment. The results show that the initial voltage modulation characteristics of the charge modulation layers 17 and 18 with asymmetric structure in the device 100 are indeed greatly increased. Generally speaking, the initial voltage modulation characteristics Theoretical prediction can be made by the capacitance value of the gate dielectric layer on the two sides. If the device is mainly operated by the bottom channel, the starting voltage is regulated by an external top gate voltage (V _TG ). The starting voltage and The slope of the curve in the top gate voltage graph is the threshold voltage modulation factor (k _DB ), which can be calculated from the following formula (1):

where _CBG is the bottom gate capacitance, _CTG is the top gate capacitance, and _CS is the semiconductor capacitance value.

Similarly, if the device is mainly operated by the top channel, and the starting voltage is regulated by an external bottom gate voltage (V _BG ), the corresponding threshold voltage modulation factor (k _DT ) can also be calculated. In this example, the theoretical value of k _DB calculated by the above formula (1) is only -0.32, while the experimental value can be as high as -1.34. Furthermore, since the device has a double-sided charge modulation layer, it also exhibits different electrical behaviors in different operation modes, as shown in (a) in Figure 4. According to this, the present invention can realize a transistor. That is, it contains two logic gate operation functions, as shown in Figure 4 (b), which can increase its application potential.

The materials that can be used in this implementation case are described as follows: 1. Mixed active layer material: used organic polymer semiconductor materials such as poly(3-hexylthiophene) or other polymer materials. Organic insulating materials such as polymethyl methacrylate, or polystyrene are used. 2. Upper and lower charge modulation layer materials: organic polymer materials used such as polyvinylidene fluoride, polymer vinylidene fluoride trifluoroethylene copolymer, polymethyl methacrylate, or poly(4-vinylphenol) )Wait. 3. Bottom and top gate dielectric layer materials: Inorganic oxides such as silicon dioxide, aluminum oxide, or titanium dioxide are commonly used gate dielectric layer materials. Organic polymer materials such as polymethyl methacrylate, polyvinylidene fluoride, polymer vinylidene fluoride trifluoroethylene copolymer, polystyrene, or poly(4-vinylphenol), etc. are used. 4. Bottom and top gate electrode materials: common metal conductors, metal oxide conductors (such as indium tin oxide), or conductive polymer materials (such as poly(3,4-ethylenedioxythiophene) can be used )

The key technical feature difference between the present invention and the prior art is: 1. The organic double-gate thin film transistor has a charge modulation layer with an asymmetric structure. Through the ability of the charge modulation layer, the carrier concentration distribution of the element channel layer can be controlled more effectively. The organic double-gate thin film transistor element can obtain optimized performance and special electrical behavior. Traditional dual-gate devices do not have this capability and cannot achieve this effect. 2. Make a single organic double-gate thin film transistor contain multiple logic gate operation functions. Conventional dual gate transistor devices usually only have a single logic gate operation capability or even no such logic gate function exists. Therefore, the organic thin film transistor with multiple logic gate functions and the manufacturing method thereof provided by the present invention can be applied to various fabrication of dual-gate integrated circuits, and has the characteristics of simple manufacturing process, low temperature, low cost, and rapid manufacturing process. . More particularly, the single organic double-gate thin film transistor has an asymmetric structure-type charge modulation layer, and its top and bottom elements have different electrical behaviors in the double-gate mode operation; and, the diverse characteristics The organic double-gate thin film transistor element is provided with a variety of logic gate function operations. Therefore, the present invention has great potential for commercial application.

In summary, the present invention is a self-contained organic thin film transistor with multiple logic gate functions The body and its manufacturing method can effectively improve various shortcomings of conventional use, in addition to improving the electrical properties of organic double-gate thin film transistors, such as current control, driving and switching capabilities, and enabling the device to have multiple logic gate functions, which can solve the problem of components Poor current control ability, enhanced threshold voltage position adjustment ability and increased switching current ratio, can mainly increase the current of the device, optimize the control of the threshold voltage position and current switching ratio, and more importantly, can make a single double-gate device. With multiple logic gate functions, the invention can be made more advanced, more practical, and more in line with the needs of users. It has indeed met the requirements of an invention patent application, and a patent application can be filed in accordance with the law.

However, the above descriptions are only preferred embodiments of the present invention, and should not be limited to this Therefore, any simple equivalent changes and modifications made according to the scope of the patent application of the present invention and the contents of the description of the invention should still fall within the scope covered by the patent of the present invention.

(Part of the present invention) 100: Organic double-gate thin-film transistor element 11: Substrate 12: Bottom gate 13: Bottom gate dielectric layer 14: Active layer 15: Top gate dielectric layer 16: Top gate 17, 18: charge modulation layer 18a: Flat film structure 18b: Columnar thin film structure (habitual part) 200: Organic Double-Gate Thin Film Transistor Elements ２１: Substrate 22: Bottom gate 23: Bottom gate dielectric layer 24: Active layer 25: Top gate dielectric layer 26: Top gate

Figure 1 shows the organic double-gate thin film transistor junction with an asymmetric structure type charge modulation layer of the present invention Schematic diagram. Figure 2 is a schematic diagram of different structures of the charge modulation layer of the present invention. FIG. 3 is a schematic diagram of the control capability of the threshold voltage position of the organic double-gate thin film transistor of the present invention. FIG. 4 is a schematic diagram of the operation of the organic double-gate thin film transistor of the present invention with two different logic gate functions. Figure 5 is a schematic diagram of the structure of a traditional double-gate organic thin film transistor. Figure 5 is a schematic diagram of the structure of a traditional double-gate organic thin film transistor.

100: Organic double gate thin film transistor element

11: Substrate

12: Bottom gate

13: Bottom gate dielectric layer

14: Active layer

15: Top gate dielectric layer

16: Top gate

17, 18: charge modulation layer

Claims (10)

A self-contained organic thin film transistor with multiple logic gate functions, comprising: a substrate; a bottom gate, arranged on the substrate; a bottom gate dielectric layer disposed on the substrate and the bottom gate; an active layer, disposed on the bottom gate dielectric layer, is a thin film containing semiconductor material; a top gate dielectric layer disposed on the active layer; a top gate disposed on the top gate dielectric layer; and At least one charge modulation layer, disposed at least one above and below the active layer, is a polar functional group and an organic polymer material with paraelectricity, ferroelectricity, or solid electrolyte. According to the self-contained organic thin film transistor with multiple logic gate functions described in item 1 of the claimed scope, the substrate can be selected from glass, silicon substrate, or flexible substrate. According to the self-contained organic thin film transistor with multiple logic gate functions described in claim 1, wherein the bottom gate dielectric layer completely covers the bottom gate. The organic thin film transistor with self-contained multiple logic gate functions according to the first item of the claimed scope includes two charge modulation layers of asymmetric structure arranged above and below the active layer, respectively. According to the organic thin film transistor with self-contained multiple logic gate functions described in item 4 of the scope of the patent application, wherein the two-layer asymmetric structure type charge modulation layers are made of different dielectric materials and are made of flat type with special pillars Thin films of different structures of the shape or hole structure type. According to the self-contained organic thin film transistor with multiple logic gate functions described in the first or fourth claim, wherein the layer or two charge modulation layers can be selected from polyvinylidene fluoride, polymer polarized Fluoroethylene trifluoroethylene copolymer, polymethyl methacrylate, or poly(4-vinylphenol) organic high molecular materials. According to the self-contained organic thin film transistor with multiple logic gate functions described in item 1 of the claimed scope, the active layer can be selected from organic semiconductors, inorganic semiconductors, multi-component mixed organic semiconductors, organic-inorganic hybrid semiconductors, or Mixtures of semiconductors and insulating materials. According to the organic thin film transistor with multiple logic gate functions described in claim 1, the active layer can be selected from poly(3-hexylthiophene) organic polymer semiconductor materials, or from polymethyl methacrylate Methyl acrylate, or polystyrene organic insulating material. According to the self-contained organic thin film transistor with multiple logic gate functions described in item 1 of the claimed scope, the bottom gate and the top gate are metal conductors, metal oxide conductors, or conductive polymer materials. The organic thin film transistor with self-contained multiple logic gate functions according to item 9 of the scope of the patent application, wherein the metal oxide conductor can be selected from indium tin oxide, and the conductive polymer material can be selected from poly(3,4 - vinyldioxythiophene).

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