TW202220507A - Integrated electro-optical flexible circuit board - Google Patents

Integrated electro-optical flexible circuit board Download PDF

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TW202220507A
TW202220507A TW109138082A TW109138082A TW202220507A TW 202220507 A TW202220507 A TW 202220507A TW 109138082 A TW109138082 A TW 109138082A TW 109138082 A TW109138082 A TW 109138082A TW 202220507 A TW202220507 A TW 202220507A
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flexible substrate
optical circuit
circuit board
optical
integrated electro
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寶樑 潘
志華 張
傑森 羅塔森
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香港商金柏科技有限公司
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Abstract

An integrated electro-optical circuit board comprises a first flexible substrate having a top side and a bottom side, at least one first optical circuit on the bottom side of the first flexible substrate connected to the top surface through a filled via, at least one first metal trace on the top side of the first flexible substrate, an optical adhesive layer connecting the bottom side of the first flexible substrate to a top side of a second flexible substrate, and at least one second metal trace on a bottom side of the second flexible substrate connected by a filled via through the second flexible substrate, the optical adhesive layer, and the first flexible substrate to the at least one first metal trace.

Description

積體電光可撓性電路板Integrated electro-optical flexible circuit board

本發明係關於積體電路板,尤其關於一種具有電子電路板的積體光學電路。The present invention relates to an integrated circuit board, and more particularly to an integrated optical circuit with an electronic circuit board.

為了支持諸如高性能計算(HPC)之類的高速、高容量數據傳輸的未來設備,光學互聯(interconnect)是首選技術。具有銅互聯(copper interconnect)的傳統電子電路由於其數據帶寬限制以及信號完整性問題而不再符合需求。光學互聯為高性能裝置提供了眾多優勢,其在較低的衰減/損耗、延遲以及功耗以及較低的功耗下實現了大量數據的傳輸速率,同時幾乎不受電磁干擾和噪音的影響。同時,電子互聯(electrical interconnect)更適合於功率分配(power distribution)和信號處理及控制。電子互聯也是具有完善基礎設施的一種成熟技術,因此具有明顯的成本優勢。To support future devices such as high-performance computing (HPC) for high-speed, high-capacity data transfer, optical interconnects are the technology of choice. Traditional electronic circuits with copper interconnects are no longer adequate due to their data bandwidth limitations and signal integrity issues. Optical interconnects offer numerous advantages for high-performance devices, enabling massive data transfer rates with low attenuation/loss, delay, and power consumption, and low power consumption, while being virtually immune to electromagnetic interference and noise. Meanwhile, electrical interconnect is more suitable for power distribution and signal processing and control. Electronic interconnection is also a mature technology with a well-established infrastructure and therefore has significant cost advantages.

近年來,可撓性(flexible)電子裝置已成為裝置小型化(miniaturization)的可靠解決方案,因為與印刷電路板(printed board,PCB)的剛性(rigid)電子裝置相比,可撓性電子裝置具有許多優點,包括更高的電路密度,更薄的外形,更輕的重量以及良好的形狀適應性(可折疊和可彎曲)。為了獲得更高的電路密度,可撓性電子裝置使用了多層的電路架構,其中各層之間的電路係透過被填充有訊號傳遞材料的通孔(via hole)來連接。In recent years, flexible electronic devices have emerged as a reliable solution for device miniaturization because flexible electronic devices are Has many advantages, including higher circuit density, thinner profile, lighter weight, and good shape adaptability (foldable and bendable). In order to achieve higher circuit density, flexible electronic devices use a multi-layer circuit structure, wherein the circuits between the layers are connected through via holes filled with signal transmission materials.

通過將光學互聯和電子互聯整合至單個封包(package)中,可以實現兩個系統的優點。這是一種有吸引力的解決方案,可以滿足高性能設備(例如超級計算機(supercomputer)、物聯網(internet of things,IoT)、電信網路、圖像檢測、智能顯示器等)的複雜技術需求。By integrating the optical and electronic interconnects into a single package, the benefits of both systems can be realized. This is an attractive solution for the complex technical needs of high-performance devices such as supercomputers (supercomputers), internet of things (IoT), telecommunication networks, image detection, smart displays, etc.

然而,從材料及加工的角度來看,結合兩個互聯(interconnection)系統以實現一個密實的包裝模組在難度上是很大的挑戰。However, combining two interconnection systems to achieve a compact packaging module is challenging from a material and processing point of view.

在光學電路中,光學信號是通過一芯材料(core material)傳輸的,芯材料必須被一包覆材料(cladding material)完全封閉。當基於全內反射原理(principle of total internal reflection)傳輸光學信號時,芯材料的折射率必須高於包覆材料的折射率。作為波導來傳遞光信號纖芯通常由矽、三五半導體(III-V)、玻璃或其他聚合物材料製成。在電子電路中,電子信號通常通過絕緣材料之間的銅線傳輸。In optical circuits, optical signals are transmitted through a core material, which must be completely enclosed by a cladding material. When transmitting optical signals based on the principle of total internal reflection, the refractive index of the core material must be higher than that of the cladding material. Acting as a waveguide to transmit optical signals The core is usually made of silicon, III-V semiconductors (III-V), glass or other polymer materials. In electronic circuits, electronic signals are usually transmitted through copper wires between insulating materials.

如上所述,電子界面已妥善地形成,其中銅會在一介電表面(通常是可撓性聚酰亞胺(flexible polyimide material)材料)上到沉積、構圖、及蝕刻以形成電路。由於每個界面的要求明顯不同,因此,一種新穎的材料堆疊組合是實現積體電光可撓性電路板模組的關鍵。在這方面,由於具有各種獨特性能,玻璃成為一種有吸引力的材料而出現,可同時用於光學和電子互聯。在光學界面中,由於其相對較低的折射率,玻璃適合作為用於廣泛範圍的芯材料的包層材料。在一電子界面中,通過互聯,玻璃為銅線以及提供了幾乎沒有介電損耗的優異絕緣性能。玻璃還具有出色的熱穩定性,且熱膨脹係數接近矽等主流半導體材料。As mentioned above, the electronic interface is well formed where copper is deposited, patterned, and etched on a dielectric surface (usually a flexible polyimide material) to form circuits. Since the requirements of each interface are significantly different, a novel material stacking combination is the key to realize the integrated electro-optical flexible circuit board module. In this regard, due to its various unique properties, glass emerges as an attractive material for both optical and electronic interconnection. In optical interfaces, glass is suitable as a cladding material for a wide range of core materials due to its relatively low refractive index. In an electronic interface, through interconnection, glass provides excellent insulating properties for copper wires and almost no dielectric losses. Glass also has excellent thermal stability and has a thermal expansion coefficient close to that of mainstream semiconductor materials such as silicon.

許多美國專利探討了光電集成(opto-electronic integration),光學黏合層(adhesives),以及環狀烯烴聚合物(cyclic olefin polymer)。這些包括美國專利公告號6,910,812(Pommer等人)、9,130,254(Izadian等人)、9,110,200(Nichol等人)、10,089,516(Popovich等人),以及美國專利申請號2018/0138346(Simavoryan等人)以及2018/0226014(Komanduri等人)等文獻。Numerous US patents discuss opto-electronic integration, optical adhesives, and cyclic olefin polymers. These include US Patent Publication Nos. 6,910,812 (Pommer et al.), 9,130,254 (Izadian et al.), 9,110,200 (Nichol et al.), 10,089,516 (Popovich et al.), and US Patent Application Nos. 2018/0138346 (Simavoryan et al.) and 2018/ 0226014 (Komanduri et al.) et al.

本發明的主要目的在於提供一種在可撓性電子電路上內嵌光學電路的方法。The main purpose of the present invention is to provide a method for embedding an optical circuit on a flexible electronic circuit.

本發明另一目的在於提供一種積體電光可撓性電路板。Another object of the present invention is to provide an integrated electro-optical flexible circuit board.

本發明另一目的在於提供一種包覆有電子和光學互聯的積體電光可撓性電路板。Another object of the present invention is to provide an integrated electro-optical flexible circuit board coated with electronic and optical interconnects.

根據本發明的目的,揭露了一種積體電光(electro-optical)電路板,包含一第一可撓性基板、至少一第一光學電路、至少一第一金屬線、一光學黏合層以及至少一第二金屬線。第一可撓性基板具有一頂側以及一底側;至少一第一光學電路位於第一可撓性基板的底側,第一可撓性基板的底側透過一填充孔(filled via)連接於第一可撓性基板的頂側;至少一第一金屬線位於第一可撓性基板的頂側;光學黏合層(adhesive layer)連接第一可撓性基板的底側至一第二可撓性基板的一頂側;至少一第二金屬線位於第二可撓性基板的一底側,第二金屬線透過一穿過第二可撓性基板、光學黏合層以及第一可撓性基板的填充孔來連接於至少一第一金屬線。According to the purpose of the present invention, an integrated electro-optical circuit board is disclosed, comprising a first flexible substrate, at least a first optical circuit, at least a first metal wire, an optical adhesive layer, and at least one the second metal wire. The first flexible substrate has a top side and a bottom side; at least one first optical circuit is located on the bottom side of the first flexible substrate, and the bottom side of the first flexible substrate is connected through a filled via (filled via) on the top side of the first flexible substrate; at least one first metal wire is located on the top side of the first flexible substrate; an optical adhesive layer (adhesive layer) connects the bottom side of the first flexible substrate to a second flexible substrate a top side of the flexible substrate; at least one second metal wire is located on a bottom side of the second flexible substrate, and the second metal wire passes through the second flexible substrate, the optical adhesive layer and the first flexible substrate The filling hole of the substrate is connected to at least one first metal line.

根據本發明的目的,另揭露了一種積體電光(electro-optical)電路板,包含一第一可撓性基板、至少一第一光學電路、至少一第一金屬線、一光學黏合層以及至少一第二金屬線。第一可撓性基板具有一頂側以及一底側;至少一第一光學電路位於第一可撓性基板的底側,第一可撓性基板的底側透過一填充孔(filled via)連接於第一可撓性基板的頂側;至少一第一金屬線位於第一可撓性基板的頂側;光學黏合層(adhesive layer)連接第一可撓性基板的底側至一第二可撓性基板的一頂側;至少一第二金屬線位於第二可撓性基板的一頂側,以及至少一第三金屬線位於第二可撓性基板的底側,第三金屬線透過一穿過第二可撓性基板的填充孔連接至至少一第二金屬線。According to the purpose of the present invention, an integrated electro-optical circuit board is further disclosed, comprising a first flexible substrate, at least a first optical circuit, at least a first metal wire, an optical adhesive layer and at least one a second metal wire. The first flexible substrate has a top side and a bottom side; at least one first optical circuit is located on the bottom side of the first flexible substrate, and the bottom side of the first flexible substrate is connected through a filled via (filled via) on the top side of the first flexible substrate; at least one first metal wire is located on the top side of the first flexible substrate; an optical adhesive layer (adhesive layer) connects the bottom side of the first flexible substrate to a second flexible substrate a top side of the flexible substrate; at least one second metal line is located on a top side of the second flexible substrate, and at least one third metal line is located on the bottom side of the second flexible substrate, and the third metal line passes through a The filling hole passing through the second flexible substrate is connected to at least one second metal wire.

本發明揭露多種版本的積體電光可撓性電路板(electoral-optical flexible circuit board,EOFCB)。這些電路板的功能包括電子和光學電路、可撓性電子元件以及玻璃材料。電子電路通常具有低速信號,並且通常用於功率分配,具有較低的電路密度。光學電路通常具有高速訊號以及較高的電路密度。可撓性電子產品具有較小的外型並且比較不起眼,它們通常具有較高的佈線密度以及可折疊和可彎曲的特性。玻璃材料具有光滑、透明的表面以及低介電信號損耗。The present invention discloses various versions of an integrated electro-optical flexible circuit board (EOFCB). The functions of these circuit boards include electronic and optical circuits, flexible electronic components, and glass materials. Electronic circuits typically have low speed signals and are often used for power distribution with lower circuit density. Optical circuits typically have high-speed signals and higher circuit density. Flexible electronics have a small profile and are relatively inconspicuous, they usually have higher wiring densities and are foldable and bendable. Glass materials have smooth, transparent surfaces and low dielectric signal loss.

本發明的概念是在一個可彎曲性電子電路上嵌入一個光學電路,製造會在用於可撓性電子電路的同一塊玻璃板上進行,以提供較佳的隔離特性。本發明使用光學黏合層於一個波導上形成一個包芯(core-clad)結構,且透過加工表面結構來直接以銅對玻璃表面進行金屬化。本發明的電光可撓性電路板具有高耦合效率和低光學衰減,其中耦合效率是指信號在不同界面/介質之間傳播時的損耗,而衰減是指在界面/介質內傳輸過程中信號強度的下降。The concept of the present invention is to embed an optical circuit on a flexible electronic circuit, and fabrication will take place on the same glass plate used for the flexible electronic circuit to provide better isolation characteristics. The present invention uses an optical bonding layer to form a core-clad structure on a waveguide, and directly metallizes the glass surface with copper by machining the surface structure. The electro-optical flexible circuit board of the present invention has high coupling efficiency and low optical attenuation, wherein the coupling efficiency refers to the loss of the signal when it propagates between different interfaces/mediums, and the attenuation refers to the signal strength during the transmission process in the interface/medium Decline.

基板的光滑玻璃表面適合薄膜加工,從而將傳輸損耗降至最低。由於玻璃的固有特性,走線以及通孔布局會有最小的介電損耗。相較於分開的光學模組以及電子模組必須被組裝在一印刷電路板(printed circuit board,PCB)上來形成內連接(interconnection),本發明透過高密度佈線、多層堆疊(multi-layer stack-up)以及模組組裝過程簡化,能夠顯著地降低產品尺寸。由於能夠避免繁瑣的組裝步驟,故可簡化整體流程。The smooth glass surface of the substrate is suitable for thin film processing to minimize transmission losses. Due to the inherent properties of glass, traces and via layouts have minimal dielectric losses. Compared with separate optical modules and electronic modules, which must be assembled on a printed circuit board (PCB) to form interconnections, the present invention achieves high-density wiring, multi-layer stack- up) and the simplification of the module assembly process, which can significantly reduce product size. Since cumbersome assembly steps can be avoided, the overall process can be simplified.

更具體地,請參考第1圖,第1圖是本發明的第一優選實施例的等距(isometric)示意圖,本發明提供了可撓性玻璃基板10(簡稱基板10)作為基膜(base film)材料。玻璃基板的厚度範圍在大約12.5到100μm之間。在一替代方式中,可用環狀烯烴聚合物(cyclic olefin polymer,COP)來取代玻璃基板,以獲得更高的可彎曲性和可撓性;此外,芯波導(core waveguide)材料係沉積在基板10上,且波導材料的折射率(refractive index)應高於基板10的折射率。波導材料的各種替代材料包括矽、二氧化矽(silicon dioxide)、砷化鎵(gallium arsenide)、磷化鎵(gallium phosphide),以及以上元件的各種類型的聚合物,且波導材料的厚度範圍在大約4到15μm之間。More specifically, please refer to FIG. 1, which is an isometric schematic diagram of a first preferred embodiment of the present invention. The present invention provides a flexible glass substrate 10 (substrate 10 for short) as a base film. film) material. The thickness of the glass substrate ranges from about 12.5 to 100 μm. In an alternative, the glass substrate can be replaced by a cyclic olefin polymer (COP) to obtain higher flexibility and flexibility; in addition, the core waveguide material is deposited on the substrate 10 , and the refractive index of the waveguide material should be higher than the refractive index of the substrate 10 . Various alternatives to waveguide materials include silicon, silicon dioxide, gallium arsenide, gallium phosphide, and various types of polymers of the above components, and the thickness of the waveguide material ranges from Between about 4 and 15 μm.

波導材料會被圖案化(patterned)以形成光學電路12;在波導側壁的特定位置上會形成具有45°角的錐形結構,且一個45°的微鏡(micro-mirror)14會沉積在該錐形結構的頂部。The waveguide material is patterned to form the optical circuit 12; tapered structures with 45° angles are formed at specific locations on the sidewalls of the waveguide, and a 45° micro-mirror 14 is deposited on the Top of the tapered structure.

光學黏合層16被圖案化的波導光學電路以及基板10所層壓(laminate),光學黏合層必須具有與基板10完全相同的折射率。光學黏合層16的各種替代材料包括環氧樹脂(epoxies)、聚氨酯(polyurethanes)、有機矽彈性體(silicones elastomers)、紫外線固化丙烯酸(UV-cured acrylics)以及氰基丙烯酸酯(Cyanoacrylates),且具有約25至50μm的的厚度範圍。The optical adhesive layer 16 is laminated by the patterned waveguide optical circuit and the substrate 10 , and the optical adhesive layer must have exactly the same refractive index as the substrate 10 . Various alternative materials for optical bonding layer 16 include epoxies, polyurethanes, silicones elastomers, UV-cured acrylics, and Cyanoacrylates, and have thickness range of about 25 to 50 μm.

接著,作為第二層基膜材料的可撓性玻璃基板18(簡稱基板18)被層壓在光學黏合層16的另一側,其中基板18的材質可以是可撓性玻璃或環狀烯烴聚合物(COP),且基板18的厚度約為12.5μm至100μm之間。Next, a flexible glass substrate 18 (referred to as substrate 18 ) as the material of the second layer of base film is laminated on the other side of the optical adhesive layer 16 , wherein the material of the substrate 18 can be flexible glass or cyclic olefin polymer material (COP), and the thickness of the substrate 18 is about 12.5 μm to 100 μm.

玻璃通孔(Through glass via,TGV)20、22係以穿過指定界面的方式形成。以光學的玻璃通孔20而言,僅通過穿過基板10即來完成,且玻璃通孔的直徑可以為15到25μm。波導材料可選擇性地沈積以完全填充光學的玻璃通孔20。Through glass vias (TGVs) 20 and 22 are formed through designated interfaces. In the case of the optical through-glass via 20, it is accomplished only by passing through the substrate 10, and the diameter of the through-glass via can be 15 to 25 μm. The waveguide material can be selectively deposited to completely fill the optical through-glass via 20 .

基板10、18的外表面係被加工以形成一矽低聚物結構(Si oligomer structure),接著透過五角環型配位(pentagonal ring coordination)來穩定地進行鈀催化劑沉積(Pd catalyst deposition)。接下來,在加工後的可撓性玻璃表面上形成一個電路圖案以形成銅電路並且對玻璃通孔22進行填充,以將電路的一側連接至另一側,其中銅電路的厚度範圍為4至15μm。電子界面形成於玻璃(或COP)基板10、18的外表面。例如,鎳化磷(Ni-P)、銅、銀或任何類型的金屬合金(例如鎳鉻合金)構成的種子層(seed layer)都可以按照需求來形成於圖案化的基板10、18的外表面。接著,銅線會被鍍在種子層上,種子層24以及銅線26位於基板10的外表面上,且種子層28和銅線30示意於基板18的外表面。填充的玻璃通孔22將銅線30中至少一條銅線會連接至銅線26中至少一條銅線。The outer surfaces of the substrates 10, 18 are processed to form a Si oligomer structure, followed by pentagonal ring coordination for stable Pd catalyst deposition. Next, a circuit pattern is formed on the processed flexible glass surface to form a copper circuit and fill through glass vias 22 to connect one side of the circuit to the other, where the copper circuit has a thickness in the range of 4 to 15 μm. Electronic interfaces are formed on the outer surfaces of the glass (or COP) substrates 10 , 18 . For example, a seed layer of nickel phosphorous (Ni-P), copper, silver, or any type of metal alloy (eg, nichrome) can be formed on the outside of the patterned substrates 10 , 18 as desired. surface. Next, copper wires are plated on the seed layer. The seed layer 24 and the copper wires 26 are located on the outer surface of the substrate 10 , and the seed layer 28 and the copper wires 30 are shown on the outer surface of the substrate 18 . The filled through-glass vias 22 connect at least one of the copper wires 30 to at least one of the copper wires 26 .

第2圖是本發明的第二優選實施例的等距示意圖。如同第一實施例,本實施例也提供了基板10作為基膜材料。玻璃基板的厚度範圍在約12.5至100μm之間。芯波導材料係沉積在基板10上,其中波導材料的折射率應高於基板10的折射率。波導材料的各種替代材料包括矽、二氧化矽(silicon dioxide)、砷化鎵(gallium arsenide)、磷化鎵(gallium phosphide),以及各種類型的聚合物,波導材料的厚度範圍在大約4到15μm之間。Figure 2 is a schematic isometric view of a second preferred embodiment of the present invention. Like the first embodiment, the present embodiment also provides the substrate 10 as the base film material. The thickness of the glass substrate ranges from about 12.5 to 100 μm. The core waveguide material is deposited on the substrate 10 , wherein the refractive index of the waveguide material should be higher than the refractive index of the substrate 10 . Various alternatives to waveguide materials include silicon, silicon dioxide, gallium arsenide, gallium phosphide, and various types of polymers, ranging in thickness from about 4 to 15 μm between.

波導材料會被圖案化(patterned)以形成光學電路12;在波導側壁的特定位置上會形成具有45°角的錐形結構,一個45°的微鏡(micro-mirror)14會沉積在該錐形結構的表面的頂部。The waveguide material is patterned to form the optical circuit 12; a tapered structure with a 45° angle is formed at specific locations on the sidewall of the waveguide, and a 45° micro-mirror 14 is deposited in the cone the top of the surface of the shaped structure.

本實施例提供了作為第二基膜材料的基板18,其厚度在大約12.5到100μm之間,與波導材料12相同的芯波導材料係沉積在基板18上。波導材料係被圖案化以形成第二光學電路42,在波導側壁的特定位置上形成有45°角的錐形幾何形狀,且第二個45°的微鏡44係沉積在此錐形表面。The present embodiment provides a substrate 18 as the second base film material, the thickness of which is between about 12.5 to 100 μm, and the same core waveguide material as the waveguide material 12 is deposited on the substrate 18 . The waveguide material is patterned to form a second optical circuit 42 with a 45° angle tapered geometry formed at specific locations on the sidewall of the waveguide, and a second 45° micromirror 44 is deposited on this tapered surface.

基板10、18係與光學黏合層材料16層壓在一起。光學電路12、42係層壓在光學黏合層16中的相對側。如上所述,光學黏合層16的折射率必須完全相同於玻璃材料10、18的折射率。光學黏合層16的替代材料包括環氧樹脂、聚氨酯、有機矽彈性體、紫外線固化丙烯酸以及氰基丙烯酸酯,且具有約25至50μm的厚度範圍。Substrates 10 , 18 are laminated with optical adhesive layer material 16 . The optical circuits 12 , 42 are laminated on opposite sides in the optical adhesive layer 16 . As mentioned above, the refractive index of the optical adhesive layer 16 must be exactly the same as the refractive index of the glass materials 10,18. Alternative materials for the optical adhesive layer 16 include epoxy, polyurethane, silicone elastomers, UV-cured acrylics, and cyanoacrylates, and have thicknesses ranging from about 25 to 50 μm.

本實施例的封裝如同第一實施例,其中本實施例具有分別連接至光學電路12、42的玻璃通孔20、40,且玻璃通孔22將光學電路12上的銅線26連接至基板18上的銅線30。The package of this embodiment is the same as the first embodiment, wherein this embodiment has through-glass vias 20 , 40 connected to the optical circuits 12 , 42 , respectively, and the through-glass vias 22 connect the copper wires 26 on the optical circuit 12 to the substrate 18 . 30 on the copper wire.

第3圖是本發明的第三優選實施例的等距示意圖,如第3圖所示,基板18係替換為聚酰亞胺(polyimide,PI)、改良式聚酰亞胺(modified polyimide,MPI)、液晶聚合物(liquid crystal polymer,LCP)、聚酯(polyester,PET)、聚萘二甲酸乙二醇酯(polyethylene-naphtalate,PEN)或聚四氟乙烯(poly tetra fluoro ethylene),或替換為環氧樹脂(epoxies)、BT、鐵氟龍(Teflon)或改良式鐵氟龍層(modified Teflon layer)的層壓基板;基板層19的厚度範圍為12.5至100um。Fig. 3 is a schematic isometric view of a third preferred embodiment of the present invention. As shown in Fig. 3, the substrate 18 is replaced by polyimide (PI), modified polyimide (MPI) ), liquid crystal polymer (LCP), polyester (PET), polyethylene-naphtalate (PEN), or polytetrafluoroethylene (polytetrafluoroethylene), or alternatives It is a laminate substrate of epoxy resin (epoxies), BT, Teflon (Teflon) or modified Teflon layer; the thickness of the substrate layer 19 ranges from 12.5 to 100um.

光學電路12和微鏡14形成在基板10的底側;基板層19的外表面經加工以形成厚度範圍為5-15nm的一聚酰胺酸(polyamic acid,PAA)層,接著是Pd催化劑沉積(Pd catalyst deposition),實施於在基板層19頂側上形成電子電路53和種子層51以及在基板層19底側形成金屬線30和種子層28之前。通孔54係經由基板層19來完成,以將基板層19的一側上的金屬線53中的至少一個與基板層19的相對側上的金屬線30中的至少一個連接。基板層19的一側上的金屬線53中至少一條連接至基板層19的對面側的金屬線30中至少一條。Optical circuit 12 and micromirrors 14 are formed on the bottom side of substrate 10; the outer surface of substrate layer 19 is processed to form a polyamic acid (PAA) layer with a thickness in the range of 5-15 nm, followed by Pd catalyst deposition ( Pd catalyst deposition), performed before the formation of the electronic circuit 53 and the seed layer 51 on the top side of the substrate layer 19 and the formation of the metal lines 30 and the seed layer 28 on the bottom side of the substrate layer 19 . Vias 54 are completed through substrate layer 19 to connect at least one of metal lines 53 on one side of substrate layer 19 to at least one of metal lines 30 on the opposite side of substrate layer 19 . At least one of the metal wires 53 on one side of the substrate layer 19 is connected to at least one of the metal wires 30 on the opposite side of the substrate layer 19 .

第4圖是本發明的第四優選實施例的等距示意圖,本實施例係相似於第三實施例,其中基板18係替換為聚酰亞胺(polyimide,PI)、改良式聚酰亞胺(modified polyimide,MPI)、液晶聚合物(liquid crystal polymer,LCP)、聚酯(polyester,PET)、聚萘二甲酸乙二醇酯(polyethylene-naphtalate、PEN)、聚四氟乙烯(poly tetra fluoro ethylene)等等,或替換諸如環氧樹脂(epoxies)、BT、鐵氟龍(Teflon)或改良式鐵氟龍層的層壓基板;第四實施例係使用電子界面的多金屬層(multi-metal layer)基板而非使用單一層基板(例如基板層19),其中這些金屬層之間插入有黏貼膜(bonding film)。FIG. 4 is a schematic isometric view of a fourth preferred embodiment of the present invention. This embodiment is similar to the third embodiment, wherein the substrate 18 is replaced by polyimide (PI), modified polyimide (modified polyimide, MPI), liquid crystal polymer (liquid crystal polymer, LCP), polyester (polyester, PET), polyethylene naphthalate (polyethylene-naphtalate, PEN), polytetrafluoroethylene (polytetrafluoroethylene) ethylene), etc., or replace laminate substrates such as epoxies, BT, Teflon, or modified Teflon layers; the fourth embodiment uses a multi-metal layer (multi- metal layer substrates rather than using a single layer substrate (eg, substrate layer 19 ) with a bonding film interposed between the metal layers.

在第四優選實施例中,光學電路 12以及微鏡14係形成於基板10的底側,種子層51與金屬線53係形成於基板層19的頂側,且種子層56與金屬線58係形成於基板層19的底側。通孔54係穿過基板層19,以將基板層19一側的金屬線53中至少一條金屬線與基板層19另一側的金屬線58中至少一條金屬線連接。相似地,種子層62與金屬線64係形成於基板層49的一側,其中基板層49的材質可為聚酰亞胺(polyimide,PI)、改良式聚酰亞胺(modified polyimide,MPI)、液晶聚合物(liquid crystal polymer,LCP)、聚酯(polyester,PET)、聚萘二甲酸乙二醇酯(polyethylene-naphtalate、PEN)、聚四氟乙烯(poly tetra fluoro ethylene)等等,或是環氧樹脂(epoxies)、BT、鐵氟龍(Teflon)或改良式鐵氟龍層(modified Teflon layer)的層壓基板。基板層19和49被層壓在一起,且兩者之間具有一個黏貼層50。黏貼層可以是用諸如環氧樹脂、氰化物、丙烯酸黏貼層、帶有環氧樹脂的改性聚酰亞胺(MPI)之類的纖維增強的黏貼膜等等,具有約為10至50μm之間的厚度,並且較佳為約25μm。In the fourth preferred embodiment, the optical circuit 12 and the micromirror 14 are formed on the bottom side of the substrate 10, the seed layer 51 and the metal wire 53 are formed on the top side of the substrate layer 19, and the seed layer 56 and the metal wire 58 are formed on the top side of the substrate layer 19. formed on the bottom side of the substrate layer 19 . The through holes 54 pass through the substrate layer 19 to connect at least one of the metal wires 53 on one side of the substrate layer 19 to at least one of the metal wires 58 on the other side of the substrate layer 19 . Similarly, the seed layer 62 and the metal wire 64 are formed on one side of the substrate layer 49 , wherein the material of the substrate layer 49 can be polyimide (PI), modified polyimide (MPI) , liquid crystal polymer (LCP), polyester (PET), polyethylene-naphtalate (PEN), polytetrafluoroethylene (poly tetra fluoro ethylene), etc., or It is a laminate substrate of epoxy resin (epoxies), BT, Teflon (Teflon) or modified Teflon layer. The substrate layers 19 and 49 are laminated together with an adhesive layer 50 therebetween. The adhesive layer may be a fiber-reinforced adhesive film such as epoxy, cyanide, acrylic adhesive, modified polyimide (MPI) with epoxy, etc., having a thickness of about 10 to 50 μm. thickness in between, and preferably about 25 μm.

如上所述,多金屬層基板(由基板層19、黏貼層50、基板層49所構成)係利用光學黏合層16來層壓至基板10上,接著形成頂部及底部的通孔和走線。形成玻璃通孔20、22係穿過基板10以及光學黏合層16;選擇性地,波導材料可作沉積以完全填充光學通孔20。基板10 的外表面係被加工以形成矽低聚物結構(Si oligomer structure),接著透過五角環型配位(pentagonal ring coordination)來穩定地進行鈀催化劑沉積(Pd catalyst deposition);電子界面係形成於基板10的外表面。例如,鎳化磷(Ni-P)、銅、銀或任何類型的金屬合金(例如鎳鉻合金(Nickel-Chromium))構成的種子層(seed layer)都可以按照需求在圖案化的基板10的外表面上形成。接著,銅線會被鍍在種子層上,種子層24和銅線26係形成於基板10的外表面上。填充的玻璃通孔22將銅線26中至少一條銅線連接至可彎曲的多金屬基板(基板層19)上的銅線53中至少一條銅線。As mentioned above, the multi-metal substrate (consisting of substrate layer 19 , adhesive layer 50 , substrate layer 49 ) is laminated to substrate 10 using optical adhesive layer 16 , and then top and bottom vias and traces are formed. Through glass vias 20 , 22 are formed through substrate 10 and optical adhesive layer 16 ; optionally, a waveguide material may be deposited to completely fill optical via 20 . The outer surface of the substrate 10 is processed to form a Si oligomer structure, followed by pentagonal ring coordination for stable Pd catalyst deposition; an electronic interface is formed on the outer surface of the substrate 10 . For example, a seed layer composed of nickel phosphorous (Ni-P), copper, silver or any type of metal alloy (eg, Nickel-Chromium) can be applied to the patterned substrate 10 as required. formed on the outer surface. Next, copper wires are plated on the seed layer, and the seed layer 24 and the copper wires 26 are formed on the outer surface of the substrate 10 . The filled through-glass vias 22 connect at least one of the copper wires 26 to at least one of the copper wires 53 on the flexible multi-metal substrate (substrate layer 19).

同樣地,通孔60、61係穿過可彎曲的多金屬基板的基膜49以及黏貼膜50。基板49的外表面經加工以形成厚度範圍為5至15nm的聚酰胺酸層,隨後進行Pd催化劑沉積,然後在基膜層49的外表面上形成具有種子層78的電子電路80。Likewise, the through holes 60 and 61 pass through the base film 49 and the adhesive film 50 of the flexible multi-metal substrate. The outer surface of substrate 49 is processed to form a polyamic acid layer with a thickness ranging from 5 to 15 nm, followed by Pd catalyst deposition, and then electronic circuit 80 with seed layer 78 is formed on the outer surface of base film layer 49 .

第5圖是本發明的第五優選實施例的截面圖,在本實施例中,有一折疊可撓性聚酰亞胺(folded flexible polyimide)基板47(簡稱可撓性基板47)。基板10(或薄膜覆晶封裝(Chip on Film,COF)基板)位於折疊的可撓性基板47的兩端之間。在基板10的一個表面上有玻璃或薄膜覆晶封裝基板,其中上具有微鏡14的一波導電路12形成於所述玻璃或薄膜覆晶封裝基板上;光學黏合層14將基板10連接至可撓性基板47。在基板10的相對另一表面,黏貼膜50將基板10連接至可撓性基板47的一相對臂。FIG. 5 is a cross-sectional view of a fifth preferred embodiment of the present invention. In this embodiment, there is a folded flexible polyimide substrate 47 (flexible substrate 47 for short). The substrate 10 (or Chip on Film (COF) substrate) is located between the two ends of the folded flexible substrate 47 . On one surface of the substrate 10 is a glass or film on chip packaging substrate, and a waveguide circuit 12 with a micromirror 14 thereon is formed on the glass or film on chip packaging substrate; the optical adhesive layer 14 connects the substrate 10 to the Flexible substrate 47 . On the opposite surface of the substrate 10 , an adhesive film 50 connects the substrate 10 to an opposite arm of the flexible substrate 47 .

第6圖是本發明的一種完整包裝的截面圖,可撓性電路板與第一實施例的第1圖相似。然而,應當理解的是,第一至第五實施例中的任何一者都可用於現在描述的製造步驟中。諸如放大器以及驅動積體電路之類的電子裝置100安裝在可撓性電路板的一個外表面上的銅線26的頂部;諸如垂直腔表面發射激光器(vertical-cavity surface-emitting laser,VCSEL)之類的光電裝置102以及光電探測器(photo detector,PD)模組安裝在可撓性電路板同一外表面的銅線26上。電子裝置102對準於光學的玻璃通孔20,例如,可以通過表面安裝技術(surface mount technology,SMT)將電子裝置100、102安裝到一表面安裝裝置(surface mount device,SMD)90,表面安裝技術可例如是倒裝芯片(flip chip)或引線鍵合(wire bonding)。光學界面104係作為波導(介質),用於來自任何其他模組的傳入(incoming)信號106,或用於來自此封裝架構的模組的傳出(outgoing)信號。Figure 6 is a sectional view of a complete package of the present invention, the flexible circuit board is similar to Figure 1 of the first embodiment. However, it should be understood that any of the first to fifth embodiments may be used in the manufacturing steps now described. Electronic devices 100 such as amplifiers and driver ICs are mounted on top of copper wires 26 on one outer surface of the flexible circuit board; such as a vertical-cavity surface-emitting laser (VCSEL) A type of optoelectronic device 102 and a photo detector (PD) module are mounted on copper wires 26 on the same outer surface of the flexible circuit board. The electronic device 102 is aligned with the optical through-glass hole 20. For example, the electronic device 100, 102 can be mounted to a surface mount device (SMD) 90 by surface mount technology (SMT), the surface mount The technology may be flip chip or wire bonding, for example. The optical interface 104 acts as a waveguide (medium) for incoming signals 106 from any other modules, or for outgoing signals from modules of this package architecture.

本發明已描述了積體電光可撓性電路板的各種實施例。本發明的電光可撓性電路板提供了高耦合效率、低光學衰減、顯著降低尺寸的高密度佈線,以及多層堆疊等技術特徵。Various embodiments of integrated electro-optical flexible circuit boards have been described herein. The electro-optical flexible circuit board of the present invention provides technical features such as high coupling efficiency, low optical attenuation, high-density wiring with significantly reduced size, and multi-layer stacking.

儘管本發明優選實施例和其詳細內容已揭露如上,但本領域技術人員將容易理解,可以在不脫離本發明的精神或是所附權利要求的範疇的情況下進行各種修改。Although the preferred embodiments of the present invention and the details thereof have been disclosed above, those skilled in the art will readily appreciate that various modifications can be made without departing from the spirit of the invention or the scope of the appended claims.

10、18:基板 12、42:光學電路 14、44:微鏡 16:光學黏合層 19、49:基板層 20、22、40:玻璃通孔 24、28、51、56、62、66、72、78:種子層 26、30:銅線 47:可撓性基板 50:黏合層 54、60、61、76:通孔 53、58、64、68、74:金屬線 80:電子電路 90:表面安裝裝置 100、102:電子裝置 104:光學界面 106:信號 10, 18: Substrate 12, 42: Optical circuits 14, 44: Micromirror 16: Optical Adhesive Layer 19, 49: Substrate layer 20, 22, 40: Through glass hole 24, 28, 51, 56, 62, 66, 72, 78: seed layer 26, 30: copper wire 47: Flexible substrate 50: Adhesive layer 54, 60, 61, 76: Through hole 53, 58, 64, 68, 74: Metal Wire 80: Electronic circuits 90: Surface Mount Devices 100, 102: Electronic devices 104: Optical Interface 106: Signal

第1圖是本發明的第一優選實施例的等距(isometric)示意圖。 第2圖是本發明的第二優選實施例的等距示意圖。 第3圖是本發明的第三優選實施例的等距示意圖。 第4圖是本發明的第四優選實施例的等距示意圖。 第5圖是本發明的第五優選實施例的截面圖。 第6圖是本發明的一種完整包裝的截面圖。 Figure 1 is an isometric schematic view of a first preferred embodiment of the present invention. Figure 2 is a schematic isometric view of a second preferred embodiment of the present invention. Figure 3 is a schematic isometric view of a third preferred embodiment of the present invention. Figure 4 is a schematic isometric view of a fourth preferred embodiment of the present invention. Fig. 5 is a cross-sectional view of a fifth preferred embodiment of the present invention. Figure 6 is a cross-sectional view of a complete package of the present invention.

10、18:基板 10, 18: Substrate

12:光學電路 12: Optical circuit

14:微鏡 14: Micromirror

16:光學黏合層 16: Optical Adhesive Layer

20、40:玻璃通孔 20, 40: glass through hole

24、28:種子層 24, 28: seed layer

26、30:銅線 26, 30: copper wire

Claims (22)

一種積體電光(electro-optical)電路板包含: 一第一可撓性基板,具有一頂側以及一底側; 至少一第一光學電路,位於該第一可撓性基板的該底側,該第一可撓性基板的該底側透過一填充孔(filled via)連接於該第一可撓性基板的該頂側; 至少一第一金屬線,位於該第一可撓性基板的該頂側; 一光學黏合層(adhesive layer),連接該第一可撓性基板的該底側至一第二可撓性基板的一頂側;以及 至少一第二金屬線,位於該第二可撓性基板的一底側,該第二金屬線透過一穿過該第二可撓性基板、該光學黏合層以及該第一可撓性基板的填充孔來連接於該至少一第一金屬線。 An integrated electro-optical circuit board includes: a first flexible substrate having a top side and a bottom side; At least one first optical circuit is located on the bottom side of the first flexible substrate, and the bottom side of the first flexible substrate is connected to the bottom side of the first flexible substrate through a filled via top side; at least one first metal wire on the top side of the first flexible substrate; an optical adhesive layer connecting the bottom side of the first flexible substrate to a top side of a second flexible substrate; and At least one second metal wire is located on a bottom side of the second flexible substrate, and the second metal wire passes through a hole passing through the second flexible substrate, the optical adhesive layer and the first flexible substrate The hole is filled to connect to the at least one first metal line. 如請求項1所述之積體電光電路板,其中該第一可撓性基板包含厚度約為12.5~100μm的玻璃或環狀烯烴聚合物(cyclic olefin polymer,COP)。The integrated electro-optical circuit board of claim 1, wherein the first flexible substrate comprises glass or a cyclic olefin polymer (COP) with a thickness of about 12.5-100 μm. 如請求項1所述之積體電光電路板,其中該至少一第一光學電路係為一波導(waveguide),該波導包含矽(silicon)、二氧化矽(silicon dioxide)、砷化鎵(gallium arsenide)、磷化鎵(gallium phosphide)其中一者或其聚合物(polymer),該至少一第一光學電路具有4~15μm的厚度,且該至少一第一光學電路的折射率高於該第一可撓性基板的折射率。The integrated electro-optical circuit board of claim 1, wherein the at least one first optical circuit is a waveguide, and the waveguide includes silicon, silicon dioxide, and gallium arsenide. arsenide), gallium phosphide (gallium phosphide) or a polymer thereof, the at least one first optical circuit has a thickness of 4-15 μm, and the at least one first optical circuit has a higher refractive index than the first optical circuit. Refractive index of a flexible substrate. 如請求項3所述之積體電光電路板,另包含位於該第一光學電路以及該填充孔之間的一45°的微鏡( micro-mirror )。The integrated electro-optical circuit board of claim 3, further comprising a 45° micro-mirror between the first optical circuit and the filling hole. 如請求項1所述之積體電光電路板,其中該光學黏合層的材料包括厚度為25至50μm的環氧樹脂(epoxies)、聚氨酯(polyurethanes)、有機矽彈性體(silicones elastomers),紫外線固化的丙烯酸(UV-cured acrylics)或氰基丙烯酸酯(Cyanoacrylates),其中該光學黏合層的折射率(refractive index)與該第一可撓性基板的折射率相同。The integrated electro-optical circuit board according to claim 1, wherein the material of the optical adhesive layer comprises epoxy resins, polyurethanes, silicone elastomers with a thickness of 25 to 50 μm, and is cured by ultraviolet light. acrylics (UV-cured acrylics) or cyanoacrylates (Cyanoacrylates), wherein the refractive index of the optical adhesive layer (refractive index) is the same as the refractive index of the first flexible substrate. 如請求項1所述之積體電光電路板,其中該第一金屬線以及第二金屬線包含厚度為4到15μm的銅以及位於其下的厚度為0.01到0.5μm的磷化鎳(Ni-P)種子層(seed layer)。The integrated electro-optical circuit board of claim 1, wherein the first metal line and the second metal line comprise copper with a thickness of 4 to 15 μm and nickel phosphide (Ni- P) seed layer (seed layer). 如請求項1所述之積體電光電路板1,另包含: 至少一第二光學電路,位於該第二可撓性基板的該頂側。 The integrated electro-optical circuit board 1 according to claim 1, further comprising: At least one second optical circuit is located on the top side of the second flexible substrate. 如請求項1所述之積體電光電路板,其中該第二可撓性基板包含厚度約為12.5~100μm的柔性玻璃或環狀烯烴聚合物(cyclic olefin polymer,COP)。The integrated electro-optical circuit board of claim 1, wherein the second flexible substrate comprises flexible glass or cyclic olefin polymer (COP) with a thickness of about 12.5-100 μm. 如請求項1所述之積體電光電路板另包含: 至少一電氣裝置,安裝在該至少一第一金屬線上;以及 至少一光電(optoelectronic)裝置,安裝在該至少一第一光學電路上。 The integrated electro-optical circuit board as claimed in claim 1 further comprises: at least one electrical device mounted on the at least one first metal wire; and At least one optoelectronic device is mounted on the at least one first optical circuit. 如請求項9所述之積體電光電路板,其中該至少一電子裝置以及該至少一光電裝置透過表面安裝技術(surface mount technology,SMT)來進行安裝,該表面安裝技術包含覆晶(flip chip)以及打線接合(wire bonding)。The integrated electro-optical circuit board of claim 9, wherein the at least one electronic device and the at least one optoelectronic device are mounted through surface mount technology (SMT), and the surface mount technology includes flip chip (flip chip) ) and wire bonding. 一種積體電光(electro-optical)電路板包含: 一第一可撓性基板,具有一頂側以及一底側; 至少一第一光學電路,位於該第一可撓性基板的該底側,該第一可撓性基板的該底側透過一填充孔(filled via)連接於該頂側; 至少一第一金屬線,位於該第一可撓性基板的該頂側上; 一光學黏合層(adhesive layer),將該第一可撓性基板的該底側連接至一第二可撓性基板的一頂側;以及 至少一第二金屬線位於該第二可撓性基板的一頂側,以及至少一第三金屬線位於該第二可撓性基板的底側,該第三金屬線透過一穿過該第二可撓性基板的填充孔連接至該至少一第二金屬線。 An integrated electro-optical circuit board includes: a first flexible substrate having a top side and a bottom side; at least one first optical circuit is located on the bottom side of the first flexible substrate, and the bottom side of the first flexible substrate is connected to the top side through a filled via; at least one first metal wire on the top side of the first flexible substrate; an optical adhesive layer connecting the bottom side of the first flexible substrate to a top side of a second flexible substrate; and At least one second metal line is located on a top side of the second flexible substrate, and at least one third metal line is located on the bottom side of the second flexible substrate, and the third metal line passes through the second flexible substrate through a The filling hole of the flexible substrate is connected to the at least one second metal wire. 如請求項11所述之積體電光電路板,其中該第一可撓性基板包含厚度為12.5~100 μm的玻璃或環狀烯烴聚合物(cyclic olefin polymer,COP)。The integrated electro-optical circuit board of claim 11, wherein the first flexible substrate comprises glass or a cyclic olefin polymer (COP) with a thickness of 12.5-100 μm. 如請求項11所述之積體電光電路板,其中該至少一第一光學電路係為一波導(waveguide),該波導包含矽(silicon)、二氧化矽(silicon dioxide)、砷化鎵(gallium arsenide)、磷化鎵(gallium phosphide)其中一者或其聚合物,該至少一第一光學電路具有4~15μm的厚度,且該至少一第一光學電路的折射率高於該第一可撓性基板的折射率。The integrated electro-optical circuit board of claim 11, wherein the at least one first optical circuit is a waveguide, and the waveguide includes silicon, silicon dioxide, and gallium arsenide. arsenide), gallium phosphide (gallium phosphide) or a polymer thereof, the at least one first optical circuit has a thickness of 4-15 μm, and the at least one first optical circuit has a higher refractive index than the first flexible the refractive index of the substrate. 如請求項13所述之積體電光電路板,另包含位於該第一光學電路以及該填充孔之間的一45°的微鏡( micro-mirror )。The integrated electro-optical circuit board of claim 13, further comprising a 45° micro-mirror between the first optical circuit and the filling hole. 如請求項11所述之積體電光電路板,其中該光學黏合層的材料包括厚度為25至50μm之間的環氧樹脂(epoxies)、聚氨酯(polyurethanes)、有機矽彈性體(silicones elastomers),紫外線固化的丙烯酸(UV-cured acrylics)或氰基丙烯酸酯(Cyanoacrylates),其中該光學黏合層的折射率(refractive index)與該第一可撓性基板的折射率相同。The integrated electro-optical circuit board of claim 11, wherein the material of the optical adhesive layer comprises epoxy resins, polyurethanes, and silicones elastomers with a thickness of between 25 and 50 μm, UV-cured acrylics or cyanoacrylates, wherein the refractive index of the optical adhesive layer is the same as the refractive index of the first flexible substrate. 如請求項11所述之積體電光電路板,其中該第一金屬線、第二金屬線以及第三金屬線包含厚度為4到15μm的銅以及位於其下的厚度為0.01到0.5μm的磷化鎳(Ni-P)種子層(seed layer)。The integrated electro-optical circuit board of claim 11, wherein the first metal line, the second metal line, and the third metal line comprise copper with a thickness of 4 to 15 μm and phosphorus with a thickness of 0.01 to 0.5 μm thereunder Nickel (Ni-P) seed layer (seed layer). 如請求項11所述之積體電光電路板,其中該第二可撓性基板包含聚酰亞胺(polyimide,PI)、改良式聚酰亞胺(modified polyimide,MPI)、液晶聚合物(liquid crystal polymer,LCP)、聚酯(polyester,PET)、聚萘二甲酸乙二醇酯(polyethylene-naphtalate、PEN)、聚四氟乙烯(poly tetra fluoro ethylene) 中至少一者,或包含以環氧樹脂(epoxies)、BT、鐵氟龍(Teflon)或改良式鐵氟龍層(modified Teflon layer) 的層壓基板,並且具有12.5至100um的厚度範圍。The integrated electro-optical circuit board of claim 11, wherein the second flexible substrate comprises polyimide (PI), modified polyimide (MPI), liquid crystal polymer (liquid crystal polymer) At least one of crystal polymer (LCP), polyester (PET), polyethylene-naphtalate (PEN), polytetrafluoroethylene (poly tetra fluoro ethylene), or including epoxy Laminate substrates of epoxies, BT, Teflon or modified Teflon layer and have a thickness range of 12.5 to 100um. 如請求項11所述之積體電光電路板,其中該第二可撓性基板包含一多金屬層(multi-metal layer)基板。The integrated electro-optical circuit board of claim 11, wherein the second flexible substrate comprises a multi-metal layer substrate. 如請求項18所述之積體電光電路板,其中該多金屬層基板包含一第三可撓性基板以及一第四可撓性基板,該第三可撓性基板以及該第四可撓性基板之間具有一黏貼膜(bonding film),其中第四金屬線以及第五金屬線係形成於並且穿過該第三可撓性基板,第六金屬線以及第七金屬線係形成於並且穿過該第四可撓性基板以及該黏合層,該第三可撓性基板以及第四可撓性基板中任一者包含聚酰亞胺(polyimide,PI)、改良式聚酰亞胺(modified polyimide,MPI)、液晶聚合物(liquid crystal polymer,LCP)、聚酯(polyester,PET)、聚萘二甲酸乙二醇酯(polyethylene-naphtalate、PEN)、聚四氟乙烯(poly tetra fluoro ethylene) 中至少一者,或包含以環氧樹脂(epoxies)、BT、鐵氟龍(Teflon)或改良式鐵氟龍層(modified Teflon layer) 的層壓基板,並且具有12.5至100um的厚度範圍。The integrated electro-optical circuit board of claim 18, wherein the multi-metal layer substrate comprises a third flexible substrate and a fourth flexible substrate, the third flexible substrate and the fourth flexible substrate There is a bonding film between the substrates, wherein the fourth metal line and the fifth metal line are formed on and pass through the third flexible substrate, and the sixth metal line and the seventh metal line are formed on and pass through Through the fourth flexible substrate and the adhesive layer, any one of the third flexible substrate and the fourth flexible substrate includes polyimide (PI), modified polyimide (PI) polyimide (MPI), liquid crystal polymer (LCP), polyester (PET), polyethylene-naphtalate (PEN), polytetrafluoroethylene (poly tetra fluoro ethylene) At least one, or a laminate substrate comprising epoxy, BT, Teflon or modified Teflon layer, and has a thickness ranging from 12.5 to 100 um. 如請求項18所述之積體電光電路板,其中: 該多金屬層基板包含一第三可撓性基板,該第三可撓性基板包含聚酰亞胺(polyimide,PI)、改良式聚酰亞胺(modified polyimide,MPI)、液晶聚合物(liquid crystal polymer,LCP)、聚酯(polyester,PET)、聚萘二甲酸乙二醇酯(polyethylene-naphtalate、PEN)、聚四氟乙烯(poly tetra fluoro ethylene) 中至少一者,或包含以環氧樹脂(epoxies)、BT、鐵氟龍(Teflon)或改良式鐵氟龍層(modified Teflon layer) 的層壓基板,並且具有12.5至100um的厚度範圍; 該第四金屬線形成於並且穿過該第三可撓性基板的一第一半部; 該第二金屬線以及該第三金屬線形成於並且穿過該第三可撓性基板的一第二半部; 一黏貼膜連接該第三可撓性基板的該第一半部至該第一可撓性基板的一頂側; 該第一金屬線以及該第二金屬線之間形成電連接;以及 該光學黏合層連接該第一可撓性基板的該底側至該第三可撓性基板的該第二半部。 The integrated electro-optical circuit board of claim 18, wherein: The multi-metal layer substrate includes a third flexible substrate, the third flexible substrate includes polyimide (PI), modified polyimide (MPI), liquid crystal polymer (liquid crystal polymer) At least one of crystal polymer (LCP), polyester (PET), polyethylene-naphtalate (PEN), polytetrafluoroethylene (poly tetra fluoro ethylene), or including epoxy Laminate substrates of epoxies, BT, Teflon or modified Teflon layer and have a thickness range of 12.5 to 100um; the fourth metal line is formed on and through a first half of the third flexible substrate; The second metal line and the third metal line are formed on and through a second half of the third flexible substrate; an adhesive film connects the first half of the third flexible substrate to a top side of the first flexible substrate; forming an electrical connection between the first metal line and the second metal line; and The optical adhesive layer connects the bottom side of the first flexible substrate to the second half of the third flexible substrate. 如請求項11所述之積體電光電路板,另包含: 至少一電氣裝置,安裝在該至少一第一金屬線上;以及 至少一光電(optoelectronic)裝置,安裝在該至少一第一光學電路上。 The integrated electro-optical circuit board as claimed in claim 11, further comprising: at least one electrical device mounted on the at least one first metal wire; and At least one optoelectronic device is mounted on the at least one first optical circuit. 如請求項21所述之積體電光電路板,其中該至少一電子裝置以及該至少一光電裝置透過表面安裝技術(surface mount technology,SMT)來進行安裝,該表面安裝技術包含覆晶(flip chip)以及打線接合(wire bonding)。The integrated electro-optical circuit board of claim 21, wherein the at least one electronic device and the at least one optoelectronic device are mounted through surface mount technology (SMT), and the surface mount technology includes flip chip (flip chip) ) and wire bonding.
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