KR20130006287A - Opto-electric circuit board including metal-slotted optical waveguid and opto-electric simultaneous communication system - Google Patents

Opto-electric circuit board including metal-slotted optical waveguid and opto-electric simultaneous communication system Download PDF

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Publication number
KR20130006287A
KR20130006287A KR1020120058458A KR20120058458A KR20130006287A KR 20130006287 A KR20130006287 A KR 20130006287A KR 1020120058458 A KR1020120058458 A KR 1020120058458A KR 20120058458 A KR20120058458 A KR 20120058458A KR 20130006287 A KR20130006287 A KR 20130006287A
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KR
South Korea
Prior art keywords
thin film
metal thin
optical
circuit board
dielectric
Prior art date
Application number
KR1020120058458A
Other languages
Korean (ko)
Inventor
김진태
Original Assignee
한국전자통신연구원
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Filing date
Publication date
Application filed by 한국전자통신연구원 filed Critical 한국전자통신연구원
Priority to US13/531,431 priority Critical patent/US8861917B2/en
Publication of KR20130006287A publication Critical patent/KR20130006287A/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/138—Integrated optical circuits characterised by the manufacturing method by using polymerisation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4274—Electrical aspects
    • G02B6/428—Electrical aspects containing printed circuit boards [PCB]
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/43—Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0274—Optical details, e.g. printed circuits comprising integral optical means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12116—Polariser; Birefringent
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12121—Laser
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12123—Diode
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10121—Optical component, e.g. opto-electronic component

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Structure Of Printed Boards (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

The present invention relates to an optical circuit board and a photoelectric simultaneous communication system including a metal slot optical waveguide, comprising: a lower metal thin film; A dielectric formed on the lower metal thin film; An upper metal thin film formed on the dielectric; And an intermediate metal thin film forming an optical waveguide at a predetermined distance on the same plane in the dielectric.

Description

Opto-electric Circuit Board Including Metal-slotted Optical Waveguid and Opto-electric Simultaneous Communication System

The present invention relates to an optoelectronic circuit board, and more particularly, to an optoelectronic circuit board and a photoelectric simultaneous communication system including a metal slot optical waveguide having a multilayer metal thin film and a dielectric inserted in the center thereof.

BACKGROUND ART Information processing technology between semiconductor chips or board-to-board using optical communication technology has been spotlighted because it can solve problems such as electromagnetic interference (EMI), impedance mismatch and signal skew of copper wiring. Accordingly, a photoelectric wiring module using optical wiring and electric wiring has been proposed as wiring of a printed circuit board. However, the dielectric optical waveguide used in the photoelectric wiring module has a disadvantage of high manufacturing cost.

Recently, a metal wire optical waveguide in which a metal wire is inserted into a dielectric material has been spotlighted as a technology that can replace a dielectric optical waveguide. However, the waveguide loss of the metal optical waveguide is much higher than that of the dielectric optical waveguide. In addition, it requires a very thin metal wire and the high resistance of the metal wire itself, it is difficult to send a high voltage power line or electrical signal at the same time with the optical signal.

The present invention has been made to solve the above problems, to provide an optical circuit board and a photoelectric simultaneous communication system comprising a metal slot optical waveguide capable of transmitting optical signals and electrical signals simultaneously using a metal thin film. There is a purpose.

According to a first embodiment of the present invention for achieving the above object, an optical circuit board according to the present invention, the lower metal thin film; A dielectric formed on the lower metal thin film; An upper metal thin film formed on the dielectric; And an intermediate metal thin film forming an optical waveguide at a predetermined distance on the same plane in the dielectric.

According to a second embodiment of the present invention, a photoelectric simultaneous communication system according to the present invention includes a lower metal thin film, a dielectric formed on an upper portion of the lower metal thin film, an upper metal thin film formed on an upper portion of the dielectric, and An intermediate metal thin film forming an optical waveguide at a predetermined distance on the same plane in the dielectric, and electrical wiring formed on an upper portion of the upper metal thin film or on a lower portion of the lower metal thin film, wherein the electrical wiring is connected to the upper portion through a via. An optoelectronic circuit board connected to the metal thin film, the intermediate metal thin film, and the lower metal thin film to be energized; A connector unit for performing electrical communication through the electric wiring; And an optoelectronic device for performing optical communication through the optical waveguide.

As described above, according to the present invention, an optical circuit board and a photoelectric circuit communication system including a metal slot optical waveguide for transmitting an optical signal through a dielectric inserted into the metal thin film and transmitting an electrical signal through the metal thin film are provided. By doing so, there is an effect that the electrical signal and the optical signal can be sent simultaneously with little waveguide loss.

1 is a cross-sectional view showing the configuration of an optical circuit board according to a first embodiment of the present invention;
2 is a view showing a light guide mode of an optical circuit board according to a first embodiment of the present invention;
3 is a graph illustrating a simulation result of waveguide loss of an optical circuit board according to a first exemplary embodiment of the present invention;
4 is a cross-sectional view showing a configuration of an optical circuit board on which electric wiring is further mounted;
5 is a diagram showing the configuration of a photoelectric simultaneous communication system including a photonic integrated circuit board according to a second embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

1 is a cross-sectional view showing the configuration of an optical circuit board according to a first embodiment of the present invention.

Referring to FIG. 1, an optoelectronic circuit board according to the present invention may be disposed on an intermediate metal thin film 110 and an intermediate metal thin film 110 that form an optical waveguide at a predetermined distance W on the same plane in the dielectric 140. The upper metal thin film 120 to be formed, the lower metal thin film 130 formed below the intermediate metal thin film 110, and the dielectric 140 formed between the upper metal thin film 120 and the lower metal thin film 130. Include. Here, the upper metal thin film 120 and the lower metal thin film 130 maintain a predetermined distance (D). In this case, the upper metal thin film 120 may be omitted.

The metal thin films 110, 120, and 130 are made of metals such as silver (Ag), gold (Au), aluminum (Al), and copper (Cu), and include any one or an alloy or mixture of two or more thereof. It may be made in the form.

Dielectric 140 includes an optical polymer having flexibility. Therefore, the optoelectronic circuit board according to the present invention can be used for photoelectric communication between PCB boards requiring flexibility.

In addition, the metal thin film (110, 120, 130) is preferably formed to a thickness of 0.1 ~ 100 ㎛.

The intermediate metal thin film 110 may be formed on the lower surface of the upper metal thin film 120 or the upper surface of the lower metal thin film 130 in the dielectric 140. In addition, the intermediate metal thin film 110 may be formed of a single layer or a plurality of layers.

2 is a view showing a light guide mode of an optical circuit board according to a first embodiment of the present invention. In detail, (a) of FIG. 2 shows a pseudo TE mode for a 1310 nm wavelength, and FIG. 2 (b) shows a pseudo TM mode for a 1310 nm wavelength. At this time, the thickness of the metal thin film (110, 120, 130) is 14㎛, the height and width of the dielectric 140 located in the center is 50㎛ respectively.

In the absence of the intermediate metal thin film 110 in the optoelectronic circuit board, the optoelectronic circuit board is an optical waveguide of a metal-dielectric-metal structure. Therefore, the light constrained in the vertical direction proceeds in a direction perpendicular to the plane through the dielectric, but is not constrained in the horizontal direction and thus cannot be applied to optical communication.

In the optoelectronic circuit board according to the present invention, the intermediate metal thin film 110 is inserted at a predetermined distance from the dielectric 140 so that light is constrained in the vertical direction and the horizontal direction to form a so-called guide mode.

Thus, as shown in FIG. 2A, in the pseudo TE mode, the phase of the electric field changes at the edge of the dielectric 140 in the horizontal direction. This is a surface plasmon effect that is excited at the interface between the metal thin films 110, 120, 130 and the dielectric 140.

In addition, as shown in FIG. 2B, in the pseudo TM mode, the phase of the electric field changes at the edge of the dielectric 140 in the vertical direction.

3 is a graph illustrating a simulation result of waveguide loss of an optical circuit board according to a first exemplary embodiment of the present invention.

In general, optical waveguides generate waveguide due to surface plasmon effects occurring at the metal thin film and dielectric interfaces.

Referring to FIG. 3, it can be seen that the waveguide loss decreases as the width and length of the dielectric material increase. That is, when the width and length of the dielectric material are 50 µm or more, waveguide loss of 1 db / cm or less is shown.

3, it can be seen that the waveguide loss decreases as the wavelength of the light wave becomes shorter. That is, although there is no noticeable difference depending on the polarization, the pseudo TM mode shows a slightly higher waveguide loss than the pseudo TE mode.

In contrast, the dependence of the waveguide loss on the thickness of the metal thin film is not large.

4 is a cross-sectional view showing the configuration of an optoelectronic circuit board on which electric wiring is further mounted.

Referring to FIG. 4, in the optoelectronic circuit board according to the present invention, an electrical wiring 150 used for the PCB substrate may be disposed on the lower metal thin film 130 or the upper metal thin film 120. Accordingly, the optical signal may be transmitted through the optical waveguide of the optoelectronic circuit board, and the electrical signal may be transmitted through the additionally provided electrical wiring 150.

In addition, the electrical wiring 150 may be electrically connected to the lower metal thin film 130, the intermediate metal thin film 110, and the upper metal thin film 120 through the vias 160. Therefore, the electrical signal of the electrical wiring 150 may be transmitted through the lower metal thin film 130, the intermediate metal thin film 110, and the upper metal thin film 120.

5 is a diagram showing the configuration of a photoelectric simultaneous communication system including a photonic integrated circuit board according to a second embodiment of the present invention.

Referring to FIG. 5, the optoelectronic circuit board of the optoelectronic simultaneous communication system according to the second embodiment of the present invention is similar to the optoelectronic circuit boards of FIGS. 1 and 4, and the intermediate metal thin film 110, the upper metal thin film 120, and the lower portion thereof. The metal thin film 130, the dielectric 140, and the metal wiring 150 are included. Here, since the functions of the respective components constituting the optoelectronic circuit board of the optoelectronic simultaneous communication system are the same as those of the optoelectronic circuit board of FIGS. 1 and 4, a detailed description thereof will be omitted.

The photoelectric simultaneous communication system according to the second embodiment of the present invention is located between the transmission connector portion 510, the receiving connector portion 520, the photoelectric circuit board and the transmission connector portion 510 located at both ends of the optical circuit board. The light emitting device 530 may further include a light receiving device 540 positioned between the photonic integrated circuit board and the receiving connector 520. In addition, the photoelectric simultaneous communication system may further include IC chips 550 and 560 and electrical circuits for controlling the operation of the light emitting device 530 and the light receiving device 540 at both ends of the photonic integrated circuit board.

The light emitting device 530 may be an optical communication surface emitting laser (VCSEL), a laser diode (LD), a light emitting diode (LED), or the like.

In addition, the photoelectric simultaneous communication system according to the present invention includes a mirror 570 at the end of the optical waveguide to increase the optical coupling efficiency between the light emitting device 530 and the optical waveguide.

In addition, the photoelectric simultaneous communication system includes a polarizer (not shown) for adjusting the polarization characteristic of the vertical optical signal under the light emitting element 530 and a condensation of the vertical optical signal under the light emitting element 530 and the light receiving element 540. It may further include a lens (not shown) for.

Hereinafter, the operation of the photoelectric simultaneous communication system according to the second embodiment of the present invention will be described.

The low speed electrical signal generated from any PCB board is applied to the optoelectronic circuit board via the transmission connector portion 510.

Thereafter, the low-speed electrical signal 100 is transmitted to the receiving connector unit 520 through the electrical wiring 150 and the metal thin films 110, 120, and 130 formed on the photonic integrated circuit board.

In addition, the high-speed electrical signal is converted into the optical signal 200 by the light emitting element 530, the converted optical signal 200 is transmitted to the light receiving element 540 through the optical waveguide of the optical circuit board, and then received Photoelectrically converted by device 540 is transferred to any PCB substrate. Thus, the IC chips 550 and 560 can communicate through the optical signal 200.

In the present invention, the inflow of the optical signal 200 from the light emitting element 530 to the optoelectronic circuit board and the inflow of the optical signal 200 from the optoelectronic circuit board to the light receiving element 540 are made through the mirror 570, but is not limited thereto. The light emitting device 530 and the light receiving device 540 may each meet perpendicularly to the optoelectronic circuit board to perform electrical / optical communication.

Through this principle, the photonic integrated circuit board can be utilized as a photoelectric simultaneous communication system capable of simultaneously transmitting an optical signal and an electrical signal. In addition, since the dielectric of the optoelectronic circuit board is made of a flexible optical polymer, the optoelectronic circuit board according to the present invention can be used for photoelectric communication between PCB boards requiring flexibility.

The embodiments disclosed in the specification of the present invention are not intended to limit the present invention. The scope of the present invention should be construed according to the following claims, and all the techniques within the scope of equivalents should be construed as being included in the scope of the present invention.

110: intermediate metal thin film 120: upper metal thin film
130: lower metal thin film 140: dielectric
150: electrical wiring 160: via
510: transmitting connector portion 520: receiving connector portion
530: light emitting element 540: light receiving element
550, 560: IC chip 570: mirror

Claims (18)

Lower metal thin film;
A dielectric formed on the lower metal thin film;
An upper metal thin film formed on the dielectric; And
An intermediate metal thin film forming an optical waveguide at a predetermined distance on the same plane in the dielectric;
Optoelectronic circuit board comprising a.
The method of claim 1,
The intermediate metal thin film, the upper metal thin film and the lower metal thin film include at least one of silver (Ag), gold (Au), aluminum (Al) and copper (Cu).
The method of claim 1,
The intermediate metal thin film, the upper metal thin film and the lower metal thin film thickness of each of the optical circuit board, characterized in that 0.1 to 100㎛.
The method of claim 1,
The intermediate metal thin film is formed on the lower surface of the upper metal thin film or the upper surface of the lower metal thin film.
The method of claim 1,
The intermediate metal thin film is an optical circuit board, characterized in that consisting of a plurality of layers.
The method of claim 1,
Electrical wiring formed above the upper metal thin film or below the lower metal thin film;
Optoelectronic circuit board further comprising.
The method according to claim 6,
The electrical wiring is connected to the upper metal thin film, the intermediate metal thin film and the lower metal thin film through a via structure, characterized in that the structure capable of energizing.
The method according to claim 6,
The photonic integrated circuit board of claim 1, wherein the photonic integrated circuit board transmits an electrical signal through the electrical wiring, the intermediate metal thin film, the upper metal thin film, and the lower metal thin film.
The method of claim 1,
And said dielectric comprises an optical polymer having flexibility.
A lower metal thin film, a dielectric formed on top of the lower metal thin film, an upper metal thin film formed on top of the dielectric, an intermediate metal thin film forming an optical waveguide at a predetermined distance on the same plane in the dielectric, and An optoelectronic circuit board including electrical wiring formed on the upper metal thin film or on the lower metal thin film;
A connector unit for performing electrical communication through the electric wiring; And
An optoelectronic device for performing optical communication through the optical waveguide;
Photoelectric simultaneous communication system comprising a.
The method of claim 10,
And the electrical wiring is connected to the upper metal thin film, the intermediate metal thin film and the lower metal thin film through vias, and has a structure capable of conducting electricity.
The method of claim 10, wherein the connector portion,
A transmission connector unit for transmitting a low speed electrical signal from an external device through the electrical wiring; And
A receiving connector unit for transmitting a low speed electrical signal received from the transmitting connector unit to the outside;
Photoelectric simultaneous communication system comprising a.
The method of claim 10, wherein the optoelectronic device,
A light emitting device for converting a high speed electrical signal into an optical signal and transferring the converted optical signal through the optical waveguide; And
A light receiving element for converting an optical signal received from the light emitting element into an electrical signal;
Photoelectric simultaneous communication system comprising a.
The method of claim 13,
The light emitting device is any one of a surface emitting laser (VCSEL), a laser diode (LD) and a light emitting diode (LED) for optical communication.
The method of claim 13,
A mirror positioned at an end of the optical waveguide to increase optical coupling efficiency between the light emitting element and the optical waveguide;
The photoelectric simultaneous communication system further comprising.
16. The method of claim 15,
A polarizer positioned under the light emitting device to adjust polarization characteristics of a vertical optical signal;
The photoelectric simultaneous communication system further comprising.
16. The method of claim 15,
A lens condensing a vertical optical signal under the light emitting element and the light receiving element;
The photoelectric simultaneous communication system further comprising.
The method of claim 10,
And said dielectric comprises a flexible optical polymer.
KR1020120058458A 2011-07-07 2012-05-31 Opto-electric circuit board including metal-slotted optical waveguid and opto-electric simultaneous communication system KR20130006287A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/531,431 US8861917B2 (en) 2011-07-07 2012-06-22 Opto-electric circuit board including metal-slotted optical waveguide and opto-electric simultaneous communication system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110067366 2011-07-07
KR20110067366 2011-07-07

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015030518A1 (en) * 2013-09-02 2015-03-05 삼성전자 주식회사 Variable nanoantenna and methods for manufacturing and operating same
KR20160109321A (en) * 2015-03-11 2016-09-21 삼성전자주식회사 Photonic Integrated Circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015030518A1 (en) * 2013-09-02 2015-03-05 삼성전자 주식회사 Variable nanoantenna and methods for manufacturing and operating same
US9904077B2 (en) 2013-09-02 2018-02-27 Samsung Electronics Co., Ltd. Tunable nano-antenna and methods of manufacturing and operating the same
KR20160109321A (en) * 2015-03-11 2016-09-21 삼성전자주식회사 Photonic Integrated Circuit
US9618716B2 (en) 2015-03-11 2017-04-11 Samsung Electronics Co., Ltd. Photonic integrated circuit

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