TW202220153A - 重分佈層連接 - Google Patents
重分佈層連接 Download PDFInfo
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- TW202220153A TW202220153A TW110122568A TW110122568A TW202220153A TW 202220153 A TW202220153 A TW 202220153A TW 110122568 A TW110122568 A TW 110122568A TW 110122568 A TW110122568 A TW 110122568A TW 202220153 A TW202220153 A TW 202220153A
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- copper
- metallization
- die
- metallization layer
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- 238000001465 metallisation Methods 0.000 claims abstract description 117
- 229910052802 copper Inorganic materials 0.000 claims abstract description 71
- 239000010949 copper Substances 0.000 claims abstract description 71
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 66
- 238000000034 method Methods 0.000 claims description 78
- 238000004891 communication Methods 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- 230000009471 action Effects 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 5
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- 238000000465 moulding Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
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Abstract
本文的各實例包括消除焊料結合點以降低連接上的電阻和雜訊的晶粒到金屬化結構連接。在一個實例中,第一晶粒經由複數個銅互連被附連到金屬化層,並且第二晶粒經由另外複數個銅互連與第一晶粒相對地被附連到該金屬化層。在此實例中,銅互連可將相應晶粒連接到該金屬化層中的金屬化結構。
Description
本案大體而言係關於金屬化結構連接,尤其但不排他地係關於晶粒到金屬化結構連接。
與通用處理器不同,專用高速應用處理器用於特定應用。然而,專用高速應用處理器需要比通用處理器更小的用於晶粒到晶粒電路系統的互連路徑。所有當前的封裝解決方案皆對附連在基板或金屬化層的相對側上的彼此面對的兩個晶粒使用至少一個焊料結合點。銅電路的焊料結合點會給高速系統帶來一些電阻和雜訊。此電路對於具有金屬化結構(例如,重分佈層、金屬化結構)的薄層封裝變得更加敏感。此情形是習知辦法的缺陷,其將受益於為支援高速晶粒到晶粒相互通訊的此類封裝緩解此種雜訊的辦法。
相應地,存在對克服習知辦法的缺陷的系統、裝置和方法的需求,包括由此提供的方法、系統和裝置。
以下提供了與本文所揭示的各裝置和方法相關聯的一或多個態樣及/或實例相關的簡化概述。如此,以下概述既不應被視為與所有構想的態樣及/或實例相關的詳盡縱覽,以下概述亦不應被認為標識與所有構想的態樣及/或實例相關的關鍵性或決定性元素或圖示與任何特定態樣及/或實例相關聯的範疇。相應地,以下概述僅具有在以下提供的詳細描述之前以簡化形式呈現與關於本文所揭示的裝置和方法的一或多個態樣及/或實例相關的某些概念的目的。
在一個態樣,一種封裝包括:金屬化層;第一晶粒,該第一晶粒電耦合到該金屬化層的第一側;第二晶粒,該第二晶粒電耦合到與該金屬化層的第一側相對的該金屬化層的第二側;在該第一晶粒和該金屬化層之間的第一複數個銅互連;及在該第二晶粒和該金屬化層之間的第二複數個銅互連。
在另一態樣,一種封裝包括:金屬化層;第一晶粒,該第一晶粒電耦合到該金屬化層的第一側;第二晶粒,該第二晶粒電耦合到與該金屬化層的第一側相對的該金屬化層的第二側;用於在該第一晶粒和該金屬化層之間互連的第一構件;及用於在該第二晶粒和該金屬化層之間互連的第二構件。
在又另一態樣,一種用於製造封裝的方法,該方法包括以下步驟:形成金屬化層;在該金屬化層的第一側上形成第一複數個銅互連;在與該金屬化層的第一側相對的該金屬化層的第二側上形成第二複數個銅互連;將第一晶粒電耦合到該第一複數個銅互連;及將第二晶粒電耦合到該第二複數個銅互連。
基於附圖和詳細描述,與本文揭示的各裝置和方法相關聯的其他特徵和優點對熟習此項技術者而言將是明瞭的。
本文所揭示的示例性方法、裝置和系統緩解了習知方法、裝置和系統的不足,以及其他先前未標識的需求。本文的各實例包括多晶片模組(MCM)中的L1互連(例如,晶粒到金屬化層或晶粒封裝層連接),諸如從晶粒凸塊穿過封裝層到模組管腳,以及穿過封裝層在多個晶粒的凸塊之間,上述各項為該等互連提供了更短和更均勻的路徑。在一些實例中,該等互連沒有焊料結合點或材料,諸如銅柱,其提供的連接比習知的基於焊料的連接具有更小的電阻和雜訊。如本文所使用的,金屬化結構可包括金屬層、通孔、焊盤或其間具有介電質的跡線。如本文所使用的,金屬化結構(例如,第一金屬化結構和第二金屬化結構)可以是重分佈層(RDL)。
圖1圖示了根據本案的一些實例的一示例性封裝。如圖1所示,封裝100(亦即,整合元件、半導體元件、積體電路、晶粒、仲介體、封裝或層疊封裝(PoP)等)可包括:金屬化層102;第一晶粒110,該第一晶粒110電耦合到該金屬化層102的第一側;第二晶粒104,該第二晶粒104電耦合到該金屬化層102的第二側;在該第一晶粒110和該金屬化層102之間的第一複數個銅互連112;及在該第二晶粒104和該金屬化層102之間的第二複數個銅互連114。封裝100亦可包括:金屬化層102中的第一金屬化結構116,其中第一複數個銅互連112被連接到第一金屬化結構116;金屬化層102中的第二金屬化結構118,其中第二複數個銅互連114被連接到第二金屬化結構118;及第一金屬化結構116被耦合到第二金屬化結構118並且可包括銅、銀、金或類似金屬中的一種。此外第一複數個銅互連112可包括至少一個銅晶粒凸塊,該銅晶粒凸塊被耦合到至少一個銅柱106,第二複數個互連114可包括由銅到銅擴散鍵合形成的柱體,封裝100亦可包括在第二晶粒104和金屬化層102之間的介電層120,其中介電層120可包括氧化物共價鍵合。任選地,封裝100可被納入到從由以下各項組成的群組中選擇的設備中:音樂播放機、視訊播放機、娛樂單元、導航設備、通訊設備、行動設備、行動電話、智慧型電話、個人數位助理、固定位置終端、平板電腦、電腦、可穿戴設備、膝上型電腦、伺服器和機動交通工具中的設備。
圖2A-M圖示了根據本案的一些實例的用於製造封裝的第一部分的示例性部分方法。如圖2A所示,用於製造封裝的第一部分250的部分方法200可從提供第一載體202開始。如圖2B所示,部分方法200可繼而將第一黏合劑塗層204敷設於第一載體202。如圖2C所示,部分方法200可繼而鍍敷複數個柱體206(例如,鍍銅柱),在複數個柱體206之間電耦合第三晶粒208和第一晶粒210。如圖2D所示,部分方法200可繼而應用模製化合物212來封裝該複數個柱體206、第三晶粒208和第一晶粒210。如圖2E所示,部分方法200可繼而背面研磨以露出該複數個柱體206。
部分方法200可如圖2F所示繼而形成第三金屬化結構214,諸如除了將焊球216附連到第三金屬化結構214之外,亦經由使用光可成像介電質(PID)來構建[PID塗層+PID曝光+顯影+種子沉積+金屬化結構/凸塊下金屬(UBM)(微影+鍍敷+剝離+蝕刻)]。如圖2G所示,部分方法200可繼而附連第二載體218。如圖2H所示,部分方法200可繼而移除第一載體202並翻轉工件。如圖2I所示,部分方法200可繼而形成第一金屬化結構220。
如圖2J所示,部分方法200可繼而形成第一複數個互連230,諸如經由鍍敷銅柱。如圖2K所示,部分方法200可繼而應用PID 222。如圖2L所示,部分方法200可繼而對平坦表面進行背面研磨和拋光。如圖2M所示,部分方法200可以以敷設氧化物224結束,諸如經由物理氣相沉積(PVD)及/或化學氣相沉積(CVD)。
圖3A-I圖示了根據本案的一些實例的用於製造封裝的第二部分的示例性部分方法。如圖3A所示,用於製造封裝的第二部分360的部分方法300可從提供第三載體326和敷設第二黏合劑塗層328開始。如圖3B所示,部分方法300可繼而電耦合第四晶粒332和第二晶粒321。如圖3C所示,部分方法300可繼而應用模製化合物334並背面研磨以平坦化表面。如圖3D所示,部分方法300可繼而附連第四載體336並翻轉工件。如圖3E所示,部分方法300可繼而移除第三載體326。
部分方法300可繼而如圖3F所示形成第二複數個互連340,諸如經由鍍敷銅柱。如圖3G所示,部分方法300可繼而應用第二PID 338。如圖3H所示,部分方法300可繼而對平坦表面進行背面研磨和拋光。如圖3I所示,部分方法300可以以敷設第二氧化物342結束,諸如經由PVD及/或CVD。
圖4A-C圖示了根據本案的一些實例的用於製造封裝的示例性部分方法。如圖4A所示,用於製造封裝400(例如,封裝100)的部分方法可從提供第一部分450(例如,第一部分250)開始。如圖4B所示,部分方法可繼而將第二部分460(例如,第二部分360)與第一部分450配合,諸如經由固化(例如,在150-250攝氏度下)第一氧化層424(例如,氧化物224)和第二氧化層442(例如,第二氧化物342)以在第一部分450和第二部分460之間形成共價鍵合,並在第一複數個互連430和第二複數個互連440之間形成金屬到金屬擴散鍵合。如圖4C所示,部分方法可以以移除第二載體418(例如,第二載體218)以形成封裝400而結束。
圖5圖示了根據本案的一些實例的用於製造封裝的另一示例性部分方法。如圖5所示,部分方法500可在方塊502中以形成金屬化層開始。部分方法500可在方塊504中繼而以在金屬化層的第一側上形成第一複數個銅互連。部分方法500可在方塊506中繼而以在與金屬化層的第一側相對的該金屬化層的第二側上形成第二複數個銅互連。部分方法500可在方塊508中繼而以將第一晶粒電耦合到第一複數個銅互連。部分方法500可在方塊510中以將第二晶粒電耦合到第二複數個銅互連而結束。
或者,部分方法500可包括在金屬化層中形成第一金屬化結構,其中第一複數個銅互連被連接到第一金屬化結構;在金屬化層中形成第二金屬化結構,其中第二複數個銅互連被連接到第二金屬化結構;其中該第一複數個銅互連包括至少一個銅晶粒凸塊和至少一個銅柱;其中該至少一個銅柱包括由銅到銅擴散鍵合形成的柱體;在金屬化層的第一側和第一晶粒之間形成介電層;其中該介電層包括氧化物共價鍵合;及將該封裝納入到從由以下各項組成的群組中選擇的設備中:音樂播放機、視訊播放機、娛樂單元、導航設備、通訊設備、行動設備、行動電話、智慧型電話、個人數位助理、固定位置終端、平板電腦、電腦、可穿戴設備、膝上型電腦、伺服器和機動交通工具中的設備。
圖6圖示了根據本案的一些實例的示例性行動設備。現在參照圖6,圖示了根據示例性態樣配置的行動設備的方塊圖並將其一般性地標示為600。在一些態樣,行動設備600可被配置成無線通訊設備。如圖所示,行動設備600包括處理器601,其可被配置成在一些態樣實現本文描述的方法。處理器601被示為包括指令管線612、緩衝處理單元(BPU)608、分支指令佇列(BIQ)611和扼流器610,如本領域公知的。為了清楚起見,已經從處理器601的此視圖中省略了該等方塊的其他眾所周知的細節(例如,計數器、條目、置信度欄位、加權和、比較器等)。
處理器601可以在鏈路上通訊地耦合到記憶體632,該鏈路可以是晶粒到晶粒或晶片到晶片的鏈路。行動設備600亦包括顯示器628和顯示器控制器626,其中顯示器控制器626耦合到處理器601和顯示器628。
在一些態樣,圖6可以包括:被耦合到處理器601的譯碼器/解碼器(CODEC)634(例如,音訊及/或語音CODEC);被耦合到CODEC 634的揚聲器636和話筒638;及被耦合到無線天線642和處理器601的無線控制器640(其可以包括數據機)。
在特定態樣,在存在一或多個上述方塊的情況下,處理器601、顯示器控制器626、記憶體632、CODEC 634和無線控制器640可被包括在系統級封裝或晶片上系統元件622中。輸入設備630(例如,實體或虛擬鍵盤)、電源644(例如,電池)、顯示器628、輸入設備630、揚聲器636、話筒638、無線天線642和電源644可以位於晶片上系統元件622的外部,並且可以被耦合至晶片上系統元件622的元件,諸如介面或控制器。
應當注意,儘管圖6圖示了行動設備,但是處理器601和記憶體632亦可被整合到機上盒、音樂播放機、視訊播放機、娛樂單元、導航設備、個人數位助理(PDA)、固定位置資料單元、電腦、膝上型電腦、平板電腦、通訊設備、行動電話或其他類似設備。
圖7圖示了根據本案的一些實例的可以與前述封裝中的任一者整合的各種電子設備。例如,行動電話設備702、膝上型電腦設備704,以及固定位置終端設備706可包括如本文所描述的封裝700。封裝700可以是例如本文中所描述的積體電路、晶粒、整合元件、整合元件封裝、積體電路元件、元件封裝、積體電路(IC)封裝、層疊封裝元件中的任一者。圖7中圖示的設備702、704、706僅僅是示例性的。其他電子設備亦能以封裝700為其特徵,此類電子設備包括但不限於包含以下各項的一組設備(例如,電子設備):行動設備、掌上型個人通訊系統(PCS)單元、可攜式資料單元(諸如個人數位助理)、啟用全球定位系統(GPS)的設備、導航設備、機上盒、音樂播放機、視訊播放機、娛樂單元、固定位置資料單元(諸如儀錶讀數裝備)、通訊設備、智慧型電話、平板電腦、電腦、可穿戴設備、伺服器、路由器、實現在機動車輛(例如,自主車輛)中的電子設備,或者儲存或取得資料或電腦指令的任何其他設備,或者其任何組合。
應當領會,本文所揭示的各個態樣可以被描述為熟習此項技術者描述及/或認識的結構、材料,及/或元件的功能等同方案。此外亦應注意,本描述或請求項中揭示的方法、系統以及裝置可由包括用於執行該方法的相應動作的構件的設備來實現。例如,在一個態樣,封裝可包括:金屬化層;在該金屬化層的第一側上的第一晶粒;在與該金屬化層的第一側相對的該金屬化層的第二側上的第二晶粒;用於在該第一晶粒和該金屬化層之間互連的第一構件(例如,第一複數個銅互連);及用於在該第二晶粒和該金屬化層之間互連的第二構件(例如,第二複數個銅互連)。將領會,前述各態樣僅作為實例提供,並且主張保護的各個態樣不限於作為實例引述的特定參考及/或說明。
圖1-圖7中圖示的各元件、程序、特徵,及/或功能中的一或多個可以被重新安排及/或組合成單個元件、程序、特徵或功能,或者可以被納入在若干元件、程序或功能中。亦可添加附加元件、組件、程序,及/或功能而不會脫離本案。亦應當注意,圖1-圖7及其在本案中的對應描述不限於晶粒及/或IC。在一些實現中,圖1-圖7及其對應描述可被用於製造、建立、提供,及/或生產整合元件。在一些實現中,元件可包括晶粒、整合元件、晶粒封裝、積體電路(IC)、元件封裝、積體電路(IC)封裝、晶圓、半導體元件、層疊封裝(PoP)元件,及/或仲介體。元件的起效側(諸如晶粒)是該元件中包含該元件的起效元件(例如,電晶體、電阻器、電容器、電感器等)的一部分,其執行該元件的操作或功能。該元件的背側是該元件中與起效側相對的一側。
如本文中所使用的,術語「使用者裝備」(或「UE」)、「使用者設備」、「使用者終端」、「客戶端設備」、「通訊設備」、「無線設備」、「無線通訊設備」、「掌上型設備」、「行動設備」、「行動終端」、「行動站」、「手持機」、「存取終端」、「用戶設備」、「用戶終端」、「用戶站」、「終端」以及其變型可以可互換地代表能夠接收無線通訊及/或導航信號的任何合適的行動或駐定設備。該等術語包括但不限於音樂播放機、視訊播放機、娛樂單元、導航設備、通訊設備、智慧型電話、個人數位助理、固定位置終端、平板電腦、電腦、可穿戴設備、膝上型電腦、伺服器、機動交通工具中的車載設備,及/或通常由個人攜帶及/或具有通訊能力(例如,無線、蜂巢、紅外、短程無線電等)的其他類型的可攜式電子設備。該等術語亦意欲包括與另一設備進行通訊的設備,該另一設備能夠接收無線通訊及/或導航信號(諸如經由短程無線、紅外、有線連接或其他連接),而不論衛星信號接收、輔助資料接收,及/或定位相關處理是在該設備還是在該另一設備處發生。另外,該等術語意欲包括所有設備,其中包括無線和有線通訊設備,其能夠經由無線電存取網路(RAN)來與核心網路進行通訊,並且經由核心網路,UE能夠與外部網路(諸如網際網路)以及與其他UE連接。當然,連接到核心網路及/或網際網路的其他機制對於UE而言亦是可能的,諸如在有線存取網路、無線區域網路(WLAN)(例如,基於IEEE 802.11等)上、等等。UE能夠經由數種類型設備中的任何設備來實施,包括但不限於印刷電路(PC)卡、CF記憶體設備、外置或內置數據機、無線或有線電話、智慧型電話、平板電腦、追蹤設備、資產標籤等。UE能夠藉以向RAN發送信號的通訊鏈路被稱為上行鏈路通道(例如,反向訊務通道、反向控制通道、存取通道等)。RAN能夠藉以向UE發送信號的通訊鏈路被稱為下行鏈路或前向鏈路通道(例如,傳呼通道、控制通道、廣播通道、前向訊務通道等)。如本文所使用的,術語訊務通道(TCH)可以指上行鏈路/反向訊務通道或下行鏈路/前向訊務通道。
電子設備之間的無線通訊可基於不同技術,諸如分碼多工存取(CDMA)、W-CDMA、分時多工存取(TDMA)、分頻多工存取(FDMA)、正交分頻多工(OFDM)、行動通訊全球系統(GSM)、3GPP長期進化(LTE)、藍芽(BT)、藍芽低功耗(BLE)、IEEE 802.11(WiFi)和IEEE 802.15.4(Zigbee/Thread),或可在無線通訊網路或資料通訊網路中使用的其他協定。藍芽低功耗(亦稱為藍芽LE、BLE和藍芽智慧)是由藍芽特別興趣小組設計和銷售的無線個人區域網路技術,其意欲提供顯著降低的功耗和成本、同時保持類似的通訊範圍。BLE於2010年被合併到主要的藍芽標準中,其中採用藍芽核心規範版本4.0並在藍芽5中更新(兩者均明確地整體納入本文)。
措辭「示例性」在本文中用於意指「用作示例、實例,或說明」。本文中描述為「示例性」的任何細節不被解釋為勝過其他實例。同樣,術語「實例」並不意指所有實例皆包括所論述的特徵、優點,或操作模式。此外,特定特徵及/或結構可與一或多個其他特徵及/或結構組合。此外,在此描述的裝置的至少一部分可被配置成執行於此描述的方法的至少一部分。
本文中所使用的術語是出於描述特定實例的目的,而不意在限制本案的實例。如本文中使用的,單數形式的「一」、「某」和「該」意欲亦包括複數形式,除非上下文另外明確指示。將進一步理解,術語「包括」、「具有」、「包含」及/或「含有」在本文中使用時指明所陳述的特徵、整數、動作、操作、元素,及/或元件的存在,但並不排除一或多個其他特徵、整數、動作、操作、元素、元件及/或其群組的存在或添加。
應當注意,術語「連接」、「耦合」或其任何變體意指在元件之間的直接或間接的任何連接或耦合,且可涵蓋兩個元件之間的中間元件的存在,該兩個元件經由該中間元件被「連接」或「耦合」在一起。
本文中使用諸如「第一」、「第二」等之類的指定對元素的任何引述並不限定彼等元素的數量及/或次序。確切而言,該等指定被用作區分兩個或更多個元素及/或元素例子的便捷方法。同樣,除非另外聲明,否則元素集合可包括一或多個元素。
熟習此項技術者將領會,資訊和信號可使用各種不同技術和技藝中的任何一種來表示。例如,貫穿上文說明始終可能被述及的資料、指令、命令、資訊、信號、位元、符號和碼片可由電壓、電流、電磁波、磁場或磁粒子、光場或光粒子,或其任何組合來表示。
結合本文所揭示的各態樣描述的各種說明性邏輯區塊、模組,以及電路可用設計成執行本文所描述的功能的通用處理器、數位信號處理器(DSP)、特殊應用積體電路(ASIC)、現場可程式設計閘陣列(FPGA)或其他可程式設計邏輯設備、個別閘門或電晶體邏輯、個別的硬體元件,或其任何組合來實現或執行。通用處理器可以是微處理器,但在替換方案中,該處理器可以是任何習知的處理器、控制器、微控制器,或狀態機。處理器亦可以被實現為計算設備的組合(例如DSP與微處理器的組合、複數個微處理器、與DSP核協調的一或多個微處理器,或其他此類配置)。另外,本文中所描述的該等動作序列可被認為是完全納入在任何形式的電腦可讀取儲存媒體(暫時性和非暫時性)內,該電腦可讀取儲存媒體內儲存有一經執行就將使相關聯的處理器執行本文中所描述的功能性的對應電腦指令集。由此,本案的各個態樣可以數種不同形式納入,所有該等形式皆已被構想為落在所主張保護的標的的範疇內。另外,對於本文描述的每個實例,任何此類實例的對應形式可在本文中被描述為例如「被配置成執行所描述的動作的邏輯」。
本案中已描述或說明圖示的任何內容皆不意欲指定任何元件、動作、特徵、益處、優點,或均等物奉獻給公眾,無論該等元件、動作、特徵、益處、優點或均等物是否記載在請求項中。
此外,熟習此項技術者將領會,結合本文所揭示的各實例描述的各種說明性邏輯區塊、模組、電路和演算法動作可被實現為電子硬體、電腦軟體,或兩者的組合。為清楚地說明硬體與軟體的該可互換性,各種說明性元件、方塊、模組、電路,以及動作在上文是以其功能性的形式作一般化描述的。此類功能性是被實現為硬體還是軟體取決於具體應用和施加於整體系統的設計約束。熟習此項技術者可針對每種特定應用以不同方式來實現所描述的功能性,但此類實現決策不應被解讀為致使脫離本案的範疇。
結合本文揭示的各實例描述的方法、序列及/或演算法可直接納入在硬體中、在由處理器執行的軟體模組中,或在該兩者的組合中。軟體模組可常駐在RAM記憶體、快閃記憶體、ROM記憶體、EPROM記憶體、EEPROM記憶體、暫存器、硬碟、可移除磁碟、CD-ROM或本領域中所知的任何其他形式的儲存媒體(包括非暫時性類型的記憶體或儲存媒體)中。示例性儲存媒體被耦合到處理器,以使得處理器能從/向該儲存媒體讀取/寫入資訊。在替換方案中,儲存媒體可被整合到處理器。
儘管已經結合設備描述了一些態樣,但毋庸置疑,該等態樣亦構成對應方法的描述,並且因此設備的方塊或元件亦應被理解為對應的方法動作或方法動作的特徵。與之類似地,結合或作為方法動作描述的各態樣亦構成對應設備的對應方塊或細節或特徵的描述。方法動作中的一些或全部可由硬體裝置(或使用硬體裝置)來執行,諸如舉例而言,微處理器、可程式設計電腦或電子電路。在一些實例中,最重要的方法動作中的一些或複數個方法動作可由此類裝置來執行。
在以上詳細描述中,可以看到不同特徵在實例中被分類在一起。此種揭示方式並不應被理解為反映所主張保護的實例具有比相應請求項中所明確提及的特徵更多的特徵的意圖。相反,本案可以包括少於所揭示的個體實例的所有特徵。因此,所附請求項由此應該被認為是被納入到該描述中,其中每項請求項自身可為單獨的實例。儘管每項請求項自身可為單獨實例,但應注意,儘管申請專利範圍中的從屬請求項可引用具有一或多個請求項的具體組合,但其他實例亦可涵蓋或包括該從屬請求項與具有任何其他從屬請求項的標的的組合或任何特徵與其他從屬和獨立請求項的組合。此類組合在本文提出,除非顯示表達了不以某一具體組合為目標。此外,亦意欲使請求項的特徵可被包括在任何其他獨立請求項中,即使該請求項不直接從屬於該獨立請求項。
此外,在一些實例中,個體動作可被細分為複數個子動作或包含複數個子動作。此類子動作可被包含在個體動作的揭示中並且可以是個體動作的揭示的一部分。
儘管前面的揭示圖示本案的說明性實例,但是應當注意,在其中可作出各種變更和修改而不會脫離如所附請求項定義的本案的範疇。根據本文中所描述的本案的各實例的方法請求項中的功能及/或動作不一定要以任何特定次序執行。另外,眾所周知的元素將不被詳細描述或可被省去以免模糊本文所揭示的各態樣和實例的相關細節。此外,儘管本案的元素可能是以單數來描述或主張權利的,但是複數亦是已料想了的,除非顯式地聲明了限定於單數。
100:封裝
102:金屬化層
104:第二晶粒
106:銅柱
110:第一晶粒
112:銅互連
114:銅互連
116:第一金屬化結構
118:第二金屬化結構
120:介電層
200:部分方法
202:第一載體
204:第一黏合劑塗層
206:柱體
208:第三晶粒
210:第一晶粒
212:模製化合物
214:第三金屬化結構
216:焊球
218:第二載體
220:第一金屬化結構
222:PID
224:氧化物
230:互連
300:部分方法
321:第二晶粒
326:第三載體
328:第二黏合劑塗層
332:第四晶粒
334:模製化合物
336:第四載體
338:第二PID
340:互連
342:第二氧化物
400:封裝
418:第二載體
424:第一氧化層
430:互連
440:互連
442:第二氧化層
450:第一部分
460:第二部分
500:部分方法
502:方塊
504:方塊
506:方塊
508:方塊
510:方塊
600:行動設備
601:處理器
608:緩衝處理單元(BPU)
610:扼流器
611:分支指令佇列(BIQ)
612:指令管線
622:晶片上系統元件
626:顯示器控制器
628:顯示器
630:輸入設備
632:記憶體
634:CODEC
636:揚聲器
638:話筒
640:無線控制器
642:無線天線
644:電源
700:封裝
702:行動電話設備
704:膝上型電腦設備
706:固定位置終端設備
對本案的各態樣及其許多伴隨優點的更完整領會將因其在參考結合附圖考慮的以下詳細描述時變得更好理解而易於獲得,附圖僅出於說明目的被提供而不對本案構成任何限定,並且其中:
圖1圖示了根據本案的一些實例的一示例性封裝;
圖2A-M圖示了根據本案的一些實例的用於製造封裝的第一部分的示例性部分方法;
圖3A-I圖示了根據本案的一些實例的用於製造封裝的第二部分的示例性部分方法;
圖4A-C圖示了根據本案的一些實例的用於製造封裝的示例性部分方法;
圖5圖示了根據本案的一些實例的用於製造封裝的另一示例性部分方法;
圖6圖示了根據本案的一些實例的示例性行動設備;及
圖7圖示了根據本案的一些實例的可整合有上述方法、元件、半導體元件、積體電路、晶粒、仲介體、封裝或層疊封裝(PoP)中的任何一者的各種電子設備。
根據慣例,附圖所圖示的特徵或許並非按比例繪製。相應地,為了清晰起見,所圖示的特徵的尺寸可能被任意放大或縮小。根據慣例,為了清晰起見,某些附圖被簡化。由此,附圖可能未繪製特定裝置或方法的所有元件。此外,類似元件符號貫穿說明書和附圖標示類似特徵。
國內寄存資訊(請依寄存機構、日期、號碼順序註記)
無
國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記)
無
100:封裝
102:金屬化層
104:第二晶粒
106:銅柱
110:第一晶粒
112:銅互連
114:銅互連
116:第一金屬化結構
118:第二金屬化結構
120:介電層
Claims (30)
- 一種封裝,包括: 一金屬化層; 一第一晶粒,該第一晶粒電耦合到該金屬化層的一第一側; 一第二晶粒,該第二晶粒電耦合到與該金屬化層的該第一側相對的該金屬化層的一第二側; 在該第一晶粒和該金屬化層之間的第一複數個銅互連;及 在該第二晶粒和該金屬化層之間的第二複數個銅互連。
- 如請求項1之封裝,進一步包括在該金屬化層中的一第一金屬化結構,其中該第一複數個銅互連被連接到該第一金屬化結構。
- 如請求項2之封裝,進一步包括在該金屬化層中的一第二金屬化結構,其中該第二複數個銅互連被連接到該第二金屬化結構。
- 如請求項3之封裝,其中該第一金屬化結構被耦合到該第二金屬化結構。
- 如請求項3之封裝,其中該第一金屬化結構是銅、銀、金或類似金屬中的一種。
- 如請求項5之封裝,其中該第二金屬化結構是銅、銀、金或類似金屬中的一種。
- 如請求項1之封裝,其中該第一複數個銅互連包括至少一個銅晶粒凸塊和至少一個銅柱。
- 如請求項7之封裝,其中該第二複數個銅互連包括由一銅到銅擴散鍵合形成的一柱體。
- 如請求項7之封裝,進一步包括在該第二晶粒和該金屬化層之間的一介電層。
- 如請求項9之封裝,其中該介電層包括一氧化物共價鍵合。
- 如請求項1之封裝,其中該封裝被納入到從由以下各項組成的該群組中選擇的一設備中:一音樂播放機、一視訊播放機、一娛樂單元、一導航設備、一通訊設備、一行動設備、一行動電話、一智慧型電話、一個人數位助理、一固定位置終端、一平板電腦、一電腦、一可穿戴設備、一膝上型電腦、一伺服器和一機動交通工具中的一設備。
- 一種封裝,包括: 一金屬化層; 一第一晶粒,該第一晶粒電耦合到該金屬化層的一第一側; 一第二晶粒,該第二晶粒電耦合到與該金屬化層的該第一側相對的該金屬化層的一第二側; 用於在該第一晶粒和該金屬化層之間互連的第一構件;及 用於在該第二晶粒和該金屬化層之間互連的第二構件。
- 如請求項12之封裝,進一步包括在該金屬化層中的一第一金屬化結構,其中該用於互連的第一構件被連接到該第一金屬化結構。
- 如請求項13之封裝,進一步包括在該金屬化層中的一第二金屬化結構,其中該用於互連的第二構件被連接到該第二金屬化結構。
- 如請求項14之封裝,其中該第一金屬化結構被耦合到該第二金屬化結構。
- 如請求項14之封裝,其中該第一金屬化結構是銅、銀、金或類似金屬中的一種。
- 如請求項6之封裝,其中該第二金屬化結構是銅、銀、金或類似金屬中的一種。
- 如請求項12之封裝,其中該用於互連的第一構件包括至少一個銅晶粒凸塊和至少一個銅柱。
- 如請求項18之封裝,其中該第二複數個銅互連包括由一銅到銅擴散鍵合形成的一柱體。
- 如請求項18之封裝,進一步包括在該第二晶粒和該金屬化層之間的一介電層。
- 如請求項20之封裝,其中該介電層包括一氧化物共價鍵合。
- 如請求項12之封裝,其中該封裝被納入到從由以下各項組成的該群組中選擇的一設備中:一音樂播放機、一視訊播放機、一娛樂單元、一導航設備、一通訊設備、一行動設備、一行動電話、一智慧型電話、一個人數位助理、一固定位置終端、一平板電腦、一電腦、一可穿戴設備、一膝上型電腦、一伺服器和一機動交通工具中的一設備。
- 一種用於製造一封裝的方法,該方法包括以下步驟: 形成一金屬化層; 在該金屬化層的一第一側上形成第一複數個銅互連; 在與該金屬化層的該第一側相對的該金屬化層的一第二側上形成第二複數個銅互連; 將一第一晶粒電耦合到該第一複數個銅互連;以及 將一第二晶粒電耦合到該第二複數個銅互連。
- 如請求項23之方法,進一步包括以下步驟:在該金屬化層中形成一第一金屬化結構,其中該第一複數個銅互連被連接到該第一金屬化結構。
- 如請求項23之方法,進一步包括以下步驟:在該金屬化層中形成一第二金屬化結構,其中該第二複數個銅互連被連接到該第二金屬化結構。
- 如請求項23之方法,其中該第一複數個銅互連包括至少一個銅晶粒凸塊和至少一個銅柱。
- 如請求項23之方法,其中該第二複數個銅互連包括由一銅到銅擴散鍵合形成的一柱體。
- 如請求項23之方法,進一步包括以下步驟:在該第二晶粒和該金屬化層之間形成一介電層。
- 如請求項28之方法,其中該介電層包括一氧化物共價鍵合。
- 如請求項23之方法,進一步包括以下步驟:將該封裝納入到從由以下各項組成的該群組中選擇的一設備中:一音樂播放機、一視訊播放機、一娛樂單元、一導航設備、一通訊設備、一行動設備、一行動電話、一智慧型電話、一個人數位助理、一固定位置終端、一平板電腦、一電腦、一可穿戴設備、一膝上型電腦、一伺服器和一機動交通工具中的一設備。
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