TW202220076A - Substrate processing method and substrate processing apparatus - Google Patents

Substrate processing method and substrate processing apparatus Download PDF

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TW202220076A
TW202220076A TW110131605A TW110131605A TW202220076A TW 202220076 A TW202220076 A TW 202220076A TW 110131605 A TW110131605 A TW 110131605A TW 110131605 A TW110131605 A TW 110131605A TW 202220076 A TW202220076 A TW 202220076A
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substrate
processing
temperature
liquid
unit
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丸本洋
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日商東京威力科創股份有限公司
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Abstract

A substrate processing method includes performing a liquid processing, detecting a temperature, generating temperature distribution information and determining whether a result of the liquid processing is good or bad. The liquid processing is performed on a substrate by using a processing unit. A temperature of a central portion of the substrate and a temperature of an edge portion of the substrate in the liquid processing are detected by using multiple sensors provided in the processing unit. The temperature distribution information indicating an in-surface temperature distribution of the substrate in the liquid processing is generated based on one or more parameter values defining a processing condition for the liquid processing and the temperature of the central portion of the substrate and the temperature of the edge portion of the substrate. Whether the result of the liquid processing is good or bad is determined based on the temperature distribution information.

Description

基板處理方法及基板處理裝置Substrate processing method and substrate processing apparatus

本揭示係關於基板處理方法及基板處理裝置。The present disclosure relates to a substrate processing method and a substrate processing apparatus.

以往，已知藉由一面使半導體晶圓等之基板旋轉，一面對旋轉的基板供給處理液，對基板進行處理的基板處理裝置。 [先前技術文獻] [專利文獻] Conventionally, there has been known a substrate processing apparatus that processes a substrate by supplying a processing liquid to the rotating substrate while rotating a substrate such as a semiconductor wafer. [Prior Art Literature] [Patent Literature]

[專利文獻1]日本特開2017-92387號公報[Patent Document 1] Japanese Patent Laid-Open No. 2017-92387

[發明所欲解決之課題][The problem to be solved by the invention]

本揭示係提供可以對每製品基板適當地掌握相對於製品基板的液處理之結果的好壞的技術。 [用以解決課題之手段] The present disclosure provides a technique that can appropriately grasp the quality of the result of the liquid processing with respect to the product substrate for each product substrate. [means to solve the problem]

本揭示之一態樣所致的基板處理方法包含進行液處理的工程，和進行檢測的工程，和進行生成的工程，和進行判定的工程。進行液處理的工程係使用具備朝向將基板保持水平的基板保持機構及保持於基板保持機構之基板吐出處理液的處理液供給部的處理單元而對基板進行液處理。進行檢測的工程係使用被設置在處理單元的複數感測器，分別檢測在液處理中之基板之中心部的溫度及基板之端部的溫度。進行生成的工程係根據規定液處理之處理條件的1個或複數的參數值，和藉由進行檢測的工程而被檢測到的基板之中心部的溫度及基板之端部的溫度，生成表示在液處理中之基板之面內溫度分布的溫度分布資訊。進行判定的工程係根據溫度分布資訊判定液處理之結果的好壞。 [發明之效果] The substrate processing method according to one aspect of the present disclosure includes a process of performing liquid processing, a process of performing detection, a process of performing generation, and a process of performing determination. The process for performing the liquid processing uses a processing unit including a substrate holding mechanism for holding the substrate horizontally and a processing liquid supply portion for discharging the processing liquid toward the substrate held by the substrate holding mechanism to perform liquid processing on the substrate. The detection process uses a plurality of sensors provided in the processing unit, and detects the temperature of the center portion of the substrate and the temperature of the end portion of the substrate under liquid processing, respectively. The generation process is based on one or more parameter values that specify the processing conditions of the liquid treatment, and the temperature of the center portion of the substrate and the temperature of the end portion of the substrate detected by the detection process. Temperature distribution information for in-plane temperature distribution of substrates in liquid processing. The judgment process is to judge the quality of the liquid treatment results based on the temperature distribution information. [Effect of invention]

若藉由本揭示，可以對每製品基板適當地掌握相對於製品基板的液處理之結果的好壞。According to the present disclosure, it is possible to appropriately grasp the quality of the result of the liquid processing with respect to the product substrate for each product substrate.

以下，參照附件圖面，詳細說明本案揭示的基板處理方法及基板處理裝置之實施型態。另外，以下所示之實施型態所揭示的基板處理方法及基板處理裝置並非被限定者。Hereinafter, the embodiments of the substrate processing method and the substrate processing apparatus disclosed in the present application will be described in detail with reference to the attached drawings. In addition, the substrate processing method and the substrate processing apparatus disclosed in the embodiments shown below are not limited.

在對半導體晶圓等之基板(以下，記載為「晶圓」)供給處理液而對晶圓進行處理的液處理製程中，在液處理中之晶圓溫度係對製程結果造成影響的重要因素之一。因此，為了更正確地掌握製程結果的好壞，以適當地掌握在液處理中之晶圓溫度為佳。In a liquid processing process in which a processing liquid is supplied to substrates such as semiconductor wafers (hereinafter, referred to as "wafers") and the wafers are processed, the wafer temperature during liquid processing is an important factor affecting the process results. one. Therefore, in order to more accurately grasp the quality of the process results, it is better to properly grasp the wafer temperature in the liquid processing.

以往，作為測量晶圓溫度之方法，已知以與製品晶圓相同的製程對內置感測器的測試晶圓進行液處理，從藉此所取得的溫度資料推測在液處理中之製品晶圓的溫度的方法。但是，在該方法中，無法對每製品晶圓個別地掌握在液處理中之製品晶圓的溫度。Conventionally, as a method of measuring the wafer temperature, it is known that a test wafer with a built-in sensor is subjected to liquid processing in the same process as that of the product wafer, and the product wafer under liquid processing is estimated from the temperature data obtained by the liquid processing. temperature method. However, in this method, the temperature of the product wafer under liquid processing cannot be grasped individually for each product wafer.

因此，期待提供藉由對每製品晶圓掌握在液處理中之製品晶圓的溫度，適當地掌握相對於製品晶圓之液處理之結果的好壞的技術。Therefore, it is desired to provide a technique for appropriately grasping the quality of the result of the liquid processing with respect to the product wafer by grasping the temperature of the product wafer under liquid processing for each product wafer.

實施型態所涉及的基板處理系統係使用被設置在處理單元的1個或複數的溫度感測器，檢測在液處理中的製品晶圓之局部性的溫度(例如，中心部的溫度、端部的溫度等)。再者，實施型態所涉及的基板處理系統係根據檢測到的溫度，和規定液處理之處理條件的1個或複數的參數值，生成表示在液處理中之製品晶圓之面內溫度分布的溫度分布資訊。The substrate processing system according to the embodiment uses one or a plurality of temperature sensors provided in the processing unit to detect the local temperature (for example, the temperature of the center part, the temperature, etc.). Furthermore, the substrate processing system according to the embodiment generates an in-plane temperature distribution representing a product wafer under liquid processing based on the detected temperature and one or a plurality of parameter values specifying processing conditions for liquid processing. temperature distribution information.

而且，實施型態所涉及的基板處理系統係根據所生成的溫度分布資訊，判定液處理之結果的好壞。Furthermore, the substrate processing system according to the embodiment determines whether the result of the liquid processing is good or bad based on the generated temperature distribution information.

具體而言，實施型態所涉及的基板處理系統係根據生成的溫度分布資訊，對每製品晶圓，判定一連串的液處理所含的各處理(例如，蝕刻處理、乾燥處理等)之結果的好壞。並且，實施型態所涉及的基板處理系統也可以判定有無液處理之結果之晶圓間差、處理單元間差及批量間差。Specifically, the substrate processing system according to the embodiment determines the result of each process (eg, etching process, drying process, etc.) included in a series of liquid processes for each product wafer based on the generated temperature distribution information. good or bad. In addition, the substrate processing system according to the embodiment can also determine the difference between wafers, the difference between processing units, and the difference between batches of the results of liquid processing.

如此一來，在實施型態所涉及的基板處理系統中，藉由對每製品晶圓，掌握在液處理中之製品晶圓的面內溫度分布，可以對每製品晶圓掌握液處理之結果的好壞。因此，若藉由實施型態所涉及之基板處理系統時，可以早期地發現液處理之結果的異常及各種間差之產生等，可以減少不良晶圓的產生。In this way, in the substrate processing system according to the embodiment, by grasping the in-plane temperature distribution of the product wafer under liquid processing for each product wafer, the result of the liquid processing can be grasped for each product wafer. good or bad. Therefore, when the substrate processing system according to the embodiment is implemented, abnormalities in the results of liquid processing and the occurrence of various differences can be detected early, and the occurrence of defective wafers can be reduced.

＜基板處理系統之概要＞ 針對實施型態所涉及之基板處理系統1(基板處理裝置之一例)之概略構成，參照圖1予以說明。圖1係表示實施型態所涉及的基板處理系統1之概略構成的圖。在以下中，為了使位置關係明確，規定彼此正交之X軸、Y軸及Z軸，將Z軸正方向設為垂直向上方向。 <Outline of substrate processing system> A schematic configuration of a substrate processing system 1 (an example of a substrate processing apparatus) according to the embodiment will be described with reference to FIG. 1 . FIG. 1 is a diagram showing a schematic configuration of a substrate processing system 1 according to the embodiment. In the following, in order to clarify the positional relationship, the X-axis, the Y-axis, and the Z-axis which are orthogonal to each other are defined, and the positive direction of the Z-axis is defined as the vertical upward direction.

如圖1所示般，基板處理系統1具備搬入搬出站2和處理站3。搬入搬出站2和處理站3被鄰接設置。As shown in FIG. 1 , the substrate processing system 1 includes a loading and unloading station 2 and a processing station 3 . The carry-in and carry-out station 2 and the processing station 3 are installed adjacent to each other.

搬入搬出站2具備載體載置部11和搬運部12。在載體載置部11被載置以水平狀態收容複數片之基板，在實施型態中為半導體晶圓W(以下，稱為晶圓W)的複數載體C。The carry-in and carry-out station 2 includes a carrier placement unit 11 and a conveyance unit 12 . A plurality of substrates, which are a plurality of carriers C of semiconductor wafers W (hereinafter, referred to as wafers W) in the embodiment, are placed on the carrier placement portion 11 .

搬運部12係與載體載置部11鄰接而被設置，在內部具備基板搬運裝置13和收授部14。基板搬運裝置13具備保持晶圓W之晶圓保持機構。再者，基板搬運裝置13可朝水平方向及垂直方向移動以及以垂直軸為中心進行旋轉，使用晶圓保持機構而在載體C和收授部14之間進行晶圓W之搬運。The conveyance unit 12 is provided adjacent to the carrier placement unit 11 , and includes a board conveyance device 13 and a receiving and receiving unit 14 inside. The substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 13 can move in the horizontal and vertical directions and rotate about the vertical axis, and transfer the wafer W between the carrier C and the receiving and transferring unit 14 using the wafer holding mechanism.

處理站3係與搬運部12鄰接而被設置。處理站3具備搬運部15和複數處理單元16。複數處理單元16被並列設置在搬運部15之兩側。The processing station 3 is installed adjacent to the conveyance unit 12 . The processing station 3 includes a conveyance unit 15 and a plurality of processing units 16 . The plurality of processing units 16 are arranged on both sides of the conveyance unit 15 in parallel.

搬運部15在內部具備基板搬運裝置17。基板搬運裝置17具備保持晶圓W之晶圓保持機構。再者，基板搬運裝置17可朝水平方向及垂直方向移動以及以垂直軸為中心進行旋轉，使用晶圓保持機構而在收授部14和處理單元16之間進行晶圓W之搬運。The conveyance unit 15 includes a board conveyance device 17 inside. The substrate transfer device 17 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 17 can move in the horizontal and vertical directions and rotate around the vertical axis, and transfer the wafer W between the receiving and receiving unit 14 and the processing unit 16 using the wafer holding mechanism.

處理單元16係對藉由基板搬運裝置17被搬運之晶圓W進行基板處理。處理單元16係保持被搬運的晶圓，對保持的晶圓進行基板處理。處理單元16係對被保持的晶圓供給處理液，進行基板處理。The processing unit 16 performs substrate processing on the wafer W transported by the substrate transport device 17 . The processing unit 16 holds the transferred wafer, and performs substrate processing on the held wafer. The processing unit 16 supplies a processing liquid to the held wafer to perform substrate processing.

處理液為例如蝕刻液。雖然蝕刻液不特別限定，但是能使用例如HF(氫氟酸)、HCl(鹽酸)和TMAH(四甲基氫氧化銨)等。再者，處理液即使為SC1(氨、雙氧水和水的混合液)及DHF(稀氫氟酸)等之洗淨液亦可。再者，處理液即使為DIW(去離子水)等之沖洗液亦可，即使IPA(異丙醇)等之置換液亦可。The treatment liquid is, for example, an etching liquid. Although the etching liquid is not particularly limited, for example, HF (hydrofluoric acid), HCl (hydrochloric acid), TMAH (tetramethylammonium hydroxide), and the like can be used. Furthermore, the treatment liquid may be a cleaning liquid such as SC1 (a mixture of ammonia, hydrogen peroxide, and water) and DHF (diluted hydrofluoric acid). In addition, the treatment liquid may be a rinsing liquid such as DIW (deionized water), or a replacement liquid such as IPA (isopropyl alcohol).

再者，基板處理系統1具備控制裝置4。控制裝置4為例如電腦，具備控制部18和記憶部19。在記憶部19儲存控制在基板處理系統1中被實行之各種處理的程式。控制部18係藉由讀出並實行被記憶於記憶部19之程式，控制基板處理系統1之動作。Furthermore, the substrate processing system 1 includes a control device 4 . The control device 4 is, for example, a computer, and includes a control unit 18 and a memory unit 19 . Programs for controlling various processes performed in the substrate processing system 1 are stored in the memory unit 19 . The control unit 18 controls the operation of the substrate processing system 1 by reading out and executing the program stored in the memory unit 19 .

另外，如此之程式係被記錄於藉由電腦可讀取之記憶媒體者，即使為從其記憶媒體被安裝於控制裝置4之記憶部19者亦可。作為藉由電腦可讀取之記憶媒體，有例如硬碟(HD)、軟碟(FD)、光碟(CD)、磁光碟(MO)、記憶卡等。In addition, if such a program is recorded in the memory medium readable by a computer, it may be installed in the memory part 19 of the control apparatus 4 from the memory medium. As a memory medium readable by a computer, there are, for example, a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory card, and the like.

在構成上述般之基板處理系統1中，首先搬入搬出站2之基板搬運裝置13從被載置在載體載置部11之載體C取出製品晶圓W(以下，僅記載為「晶圓W」)而載置於收授部14。被載置於收授部14之晶圓W藉由處理站3之基板搬運裝置17從收授部14被取出，而被搬入至處理單元16。In the above-described substrate processing system 1 , first, the substrate transfer device 13 of the transfer station 2 takes out the product wafer W (hereinafter, simply referred to as "wafer W") from the carrier C placed on the carrier placing portion 11 . ) and mounted on the receiving and receiving portion 14 . The wafer W placed on the receiving and receiving unit 14 is taken out from the receiving and receiving unit 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16 .

被搬入至處理單元16之晶圓W藉由處理單元16被基板處理之後，藉由基板搬運裝置17從處理單元16被搬出，被載置在收授部14。而且，被載置在收授部14之處理完的晶圓W藉由基板搬運裝置13返回至載體載置部11之載體C。After the wafer W carried into the processing unit 16 is processed by the substrate by the processing unit 16 , it is carried out from the processing unit 16 by the substrate transfer device 17 and placed on the receiving and receiving unit 14 . Then, the processed wafer W placed on the receiving and transferring unit 14 is returned to the carrier C of the carrier placing unit 11 by the substrate transfer device 13 .

＜處理單元之概要＞ 接著，針對處理單元16之構成，參照圖2予以說明。圖2為表示實施型態所涉及之處理單元16之構成的圖。 <Outline of Processing Unit> Next, the configuration of the processing unit 16 will be described with reference to FIG. 2 . FIG. 2 is a diagram showing the configuration of the processing unit 16 according to the embodiment.

如圖2所示般，處理單元16具備腔室20、基板保持機構30、處理液供給部40和回收杯50、背面供給部60。As shown in FIG. 2 , the processing unit 16 includes a chamber 20 , a substrate holding mechanism 30 , a processing liquid supply part 40 , a recovery cup 50 , and a back surface supply part 60 .

腔室20收容基板保持機構30、處理液供給部40、回收杯50及背面供給部60。在腔室20之頂棚部設置有FFU(Fan Filter Unit)21。FFU21係經由供給管線21a而被連接於潔淨氣體供給源21b，藉由從腔室20之頂棚部朝向下方吐出從潔淨氣體供給源21b被供給的潔淨氣體，在腔室20內形成向下流。作為潔淨氣體，能使用例如乾氣體。再者，作為潔淨氣體，能使用N 2(氮)氣體及氬氣等的惰性氣體。另外，從潔淨氣體供給源21b被供給的潔淨氣體設為事先被調整成特定溫度及濕度者。 The chamber 20 accommodates the substrate holding mechanism 30 , the processing liquid supply part 40 , the recovery cup 50 , and the back surface supply part 60 . An FFU (Fan Filter Unit) 21 is provided on the ceiling portion of the chamber 20 . The FFU 21 is connected to the clean gas supply source 21b via the supply line 21a, and forms a downward flow in the chamber 20 by discharging the clean gas supplied from the clean gas supply source 21b downward from the ceiling portion of the chamber 20. As the clean gas, for example, dry gas can be used. In addition, as a clean gas, inert gas, such as N2 (nitrogen) gas and argon gas, can be used. In addition, the clean gas supplied from the clean gas supply source 21b is adjusted to a specific temperature and humidity in advance.

在供給管線21a設置閥體21c、溫度調整部21d、濕度調整部21e。閥體21c係對供給管線21a進行開關。溫度調整部21d係調整在供給管線21a流動的潔淨氣體的溫度。濕度調整部21e係調整在供給管線21a流動的潔淨氣體的濕度。該些閥體21c、溫度調整部21d及濕度調整部21e係被設置在每處理單元16。因此，實施型態所涉及的基板處理系統1可以對每處理單元16個別地調整從FFU被供給至腔室20內的潔淨氣體之溫度及濕度。The valve body 21c, the temperature adjustment part 21d, and the humidity adjustment part 21e are provided in the supply line 21a. The valve body 21c opens and closes the supply line 21a. The temperature adjustment unit 21d adjusts the temperature of the clean gas flowing through the supply line 21a. The humidity adjustment unit 21e adjusts the humidity of the clean gas flowing through the supply line 21a. The valve body 21c, the temperature adjustment part 21d, and the humidity adjustment part 21e are provided in each processing unit 16. As shown in FIG. Therefore, the substrate processing system 1 according to the embodiment can individually adjust the temperature and humidity of the clean gas supplied from the FFU into the chamber 20 for each processing unit 16 .

基板保持機構30具備保持部31、支柱部32和驅動部33。保持部31係將晶圓W保持水平。具體而言，保持部31具備複數把持部31a，使用複數把持部31a而把持晶圓W之端部。支柱部32係在垂直方向延伸，基端部藉由驅動部33被支撐成能夠旋轉，在前端部水平地支持保持部31。驅動部33係使支柱部32繞垂直軸旋轉。如此之基板保持機構30藉由使用驅動部33使支柱部32旋轉而使被支撐於支柱部32之保持部31旋轉，依此使被保持於保持部31之晶圓W旋轉。The substrate holding mechanism 30 includes a holding portion 31 , a support portion 32 , and a driving portion 33 . The holding portion 31 holds the wafer W horizontally. Specifically, the holding portion 31 includes a plurality of holding portions 31 a, and the end portion of the wafer W is held by using the plurality of holding portions 31 a. The strut portion 32 extends in the vertical direction, the base end portion is rotatably supported by the drive portion 33 , and the front end portion supports the holding portion 31 horizontally. The drive unit 33 rotates the support column 32 around the vertical axis. In this way, the substrate holding mechanism 30 rotates the support portion 31 supported by the support portion 32 by using the drive portion 33 to rotate the support portion 32 , thereby rotating the wafer W held by the support portion 31 .

處理液供給部40對晶圓W供給各種處理液。處理液供給部40具備被配置在晶圓W之上方的噴嘴41，和支持噴嘴41的臂部42，和使臂部42移動的移動機構43。The processing liquid supply unit 40 supplies various processing liquids to the wafer W. As shown in FIG. The processing liquid supply unit 40 includes a nozzle 41 arranged above the wafer W, an arm portion 42 that supports the nozzle 41 , and a moving mechanism 43 that moves the arm portion 42 .

噴嘴41係經由供給管線44a而被連接於後述藥液供給單元70，對晶圓W之表面吐出從藥液供給單元70被供給的藥液。在實施型態中，藥液為蝕刻液。The nozzle 41 is connected to a chemical solution supply unit 70 to be described later via a supply line 44 a , and discharges the chemical solution supplied from the chemical solution supply unit 70 to the surface of the wafer W. As shown in FIG. In an embodiment, the chemical liquid is an etching liquid.

再者，噴嘴41係經由供給管線44b而被連接於後述沖洗液供給源80，對晶圓W之表面吐出從沖洗液供給源80被供給的沖洗液。在實施型態中，沖洗液為DIW。In addition, the nozzle 41 is connected to the rinse liquid supply source 80 described later via the supply line 44b, and discharges the rinse liquid supplied from the rinse liquid supply source 80 to the surface of the wafer W. As shown in FIG. In an embodiment, the flushing fluid is DIW.

再者，噴嘴41係經由供給管線44c而被連接於後述置換液供給單元90，對晶圓W之表面(上面)吐出從置換液供給單元90被供給的置換液。在實施型態中，置換液為IPA。In addition, the nozzle 41 is connected to the substitution liquid supply unit 90 described later via the supply line 44c, and discharges the substitution liquid supplied from the substitution liquid supply unit 90 to the surface (upper surface) of the wafer W. In an embodiment, the replacement fluid is IPA.

在供給管線44a設置閥體45a及溫度調整部46a。閥體45a係對供給管線44a進行開關。溫度調整部46a係使用例如帕耳帖元件或調溫水等，調整在供給管線44a流動的蝕刻液的溫度。同樣，在供給管線44c設置閥體45c及溫度調整部46c。閥體45c係對供給管線44c進行開關。溫度調整部46c係調整在供給管線44c流動的IPA的溫度。The valve body 45a and the temperature adjustment part 46a are provided in the supply line 44a. The valve body 45a opens and closes the supply line 44a. The temperature adjustment part 46a adjusts the temperature of the etching liquid which flows through the supply line 44a, using, for example, a Peltier element, tempering water, or the like. Similarly, the valve body 45c and the temperature adjustment part 46c are provided in the supply line 44c. The valve body 45c opens and closes the supply line 44c. The temperature adjustment unit 46c adjusts the temperature of the IPA flowing through the supply line 44c.

閥體45a及溫度調整部46a被設置在每處理單元16。因此，實施型態所涉及之基板處理系統1可以對每處理單元16調整從藥液供給單元70被供給的蝕刻液之溫度。同樣，閥體45c及溫度調整部46c被設置在每處理單元16。因此，實施型態所涉及之基板處理系統1可以對每處理單元16調整從置換液供給單元90被供給的IPA之溫度。另外，在供給管線44b設置對供給管線44b進行開關的閥體45b。The valve body 45a and the temperature adjustment part 46a are provided in each processing unit 16 . Therefore, the substrate processing system 1 according to the embodiment can adjust the temperature of the etching solution supplied from the chemical solution supply unit 70 for each processing unit 16 . Similarly, the valve body 45c and the temperature adjustment part 46c are provided in each processing unit 16 . Therefore, the substrate processing system 1 according to the embodiment can adjust the temperature of the IPA supplied from the replacement liquid supply unit 90 for each processing unit 16 . Moreover, the valve body 45b which opens and closes the supply line 44b is provided in the supply line 44b.

回收杯50被配置成包圍保持部31，補集藉由保持部31之旋轉而從晶圓W飛散之處理液。在回收杯50之底部形成排液口51，藉由回收杯50捕集到的處理液，從如此之排液口51被排出至處理單元16之外部。再者，在回收杯50之底部形成將從FFU21被供給之氣體排出至處理單元16之外部的排氣口52。The recovery cup 50 is arranged so as to surround the holding portion 31 , and replenishes the processing liquid scattered from the wafer W by the rotation of the holding portion 31 . A liquid discharge port 51 is formed at the bottom of the recovery cup 50 , and the processing liquid captured by the recovery cup 50 is discharged to the outside of the processing unit 16 through the liquid discharge port 51 . Furthermore, an exhaust port 52 for discharging the gas supplied from the FFU 21 to the outside of the processing unit 16 is formed at the bottom of the recovery cup 50 .

背面供給部60例如被配置在上下貫通保持部31及支柱部32的中空部。在背面供給部60之內部形成在上下方向延伸的流路61。流路61之上端成為朝向晶圓W之背面而開口的吐出口62。The back surface supply part 60 is arranged, for example, in a hollow part that penetrates the holding part 31 and the support part 32 up and down. A flow path 61 extending in the vertical direction is formed inside the back surface supply portion 60 . The upper end of the flow path 61 becomes a discharge port 62 that opens toward the back surface of the wafer W. As shown in FIG.

背面供給部60之流路61係經由供給管線61a而被連接於調溫液供給源61b。背面供給部60係從吐出口62朝向晶圓W之背面吐出從調溫液供給源61b被供給的調溫液。在實施型態中，調溫液為HDIW(Hot DIW)，即是加熱至特定溫度的DIW。The flow path 61 of the back surface supply part 60 is connected to the temperature control liquid supply source 61b via the supply line 61a. The back surface supply unit 60 discharges the temperature adjustment liquid supplied from the temperature adjustment liquid supply source 61 b toward the back surface of the wafer W from the discharge port 62 . In an embodiment, the tempering liquid is HDIW (Hot DIW), that is, DIW heated to a specific temperature.

在供給管線61a設置閥體61c及溫度調整部61d。閥體61c係對供給管線61a進行開關。溫度調整部61d係調整在供給管線61a流動的調溫液的溫度。該些閥體61c及溫度調整部61d被設置在每處理單元16。因此，實施型態所涉及的基板處理系統1可以對每處理單元16個別地調整從背面供給部60被供給至晶圓W之背面的調溫液的溫度。The valve body 61c and the temperature adjustment part 61d are provided in the supply line 61a. The valve body 61c opens and closes the supply line 61a. The temperature adjustment part 61d adjusts the temperature of the temperature adjustment liquid flowing through the supply line 61a. These valve bodies 61c and temperature adjustment parts 61d are provided in each processing unit 16 . Therefore, the substrate processing system 1 according to the embodiment can individually adjust the temperature of the temperature conditioning liquid supplied from the back surface supply unit 60 to the back surface of the wafer W for each processing unit 16 .

＜溫度感測器之配置例＞ 針對檢測液處理中之晶圓W之局部性的溫度的溫度感測器之配置例，參照圖3予以說明。圖3為表示實施型態所涉及的溫度感測器之配置例的圖。 <Example of temperature sensor arrangement> An example of the arrangement of the temperature sensor for detecting the local temperature of the wafer W in the liquid processing will be described with reference to FIG. 3 . FIG. 3 is a diagram showing an arrangement example of the temperature sensor according to the embodiment.

如圖3所示般，處理單元16具備第1溫度感測器110，和複數第2溫度感測器120。第1溫度感測器110係被設置在噴嘴41，檢測噴嘴41內之處理液的溫度。從噴嘴41被吐出的處理液被吐出至晶圓W之中央部。因此，藉由第1溫度感測器110被檢測出的處理液之溫度可以視為在液處理中之晶圓W之中央部的溫度。另外，若第1溫度感測器110在處理液供給部40被設置在較溫度調整部46a、46c更下游即可，不一定要被設置在噴嘴41。As shown in FIG. 3 , the processing unit 16 includes a first temperature sensor 110 and a plurality of second temperature sensors 120 . The first temperature sensor 110 is provided in the nozzle 41 and detects the temperature of the processing liquid in the nozzle 41 . The processing liquid discharged from the nozzle 41 is discharged to the central portion of the wafer W. As shown in FIG. Therefore, the temperature of the processing liquid detected by the first temperature sensor 110 can be regarded as the temperature of the central portion of the wafer W under liquid processing. In addition, the first temperature sensor 110 may be installed downstream of the temperature adjustment parts 46 a and 46 c in the processing liquid supply part 40 , and does not necessarily need to be installed in the nozzle 41 .

第2溫度感測器120被設置在基板保持機構30(參照圖2)所具備的把持部31a，檢測把持部31a之前端部(與晶圓W的接觸部)之溫度。在圖3中，表示基板保持機構30具備3個把持部31a，在各把持部31a各設置一個第2溫度感測器120的例。把持部31a與晶圓W之端部接觸。因此，藉由第2溫度感測器120被檢測的把持部31a之溫度可以視為在液處理中之晶圓W之端部的溫度。The second temperature sensor 120 is provided in the gripping portion 31a of the substrate holding mechanism 30 (see FIG. 2 ), and detects the temperature of the front end portion (contact portion with the wafer W) of the gripping portion 31a. FIG. 3 shows an example in which the substrate holding mechanism 30 includes three gripping portions 31a, and one second temperature sensor 120 is provided in each gripping portion 31a. The grip portion 31a is in contact with the end portion of the wafer W. As shown in FIG. Therefore, the temperature of the grip portion 31a detected by the second temperature sensor 120 can be regarded as the temperature of the end portion of the wafer W under liquid processing.

另外，處理單元16若具備至少1個的第2溫度感測器120即可。即是，第2溫度感測器120若設置在複數把持部31a之至少一個即可。再者，若第2溫度感測器120被設置在與晶圓W之端部接觸的構件即可，不一定要被設置在把持部31a。In addition, the processing unit 16 may be provided with at least one second temperature sensor 120 . That is, the second temperature sensor 120 may be provided in at least one of the plurality of gripping portions 31a. Furthermore, the second temperature sensor 120 may be provided on a member that is in contact with the end portion of the wafer W, and does not necessarily need to be provided on the grip portion 31a.

＜置換液供給單元之概要＞ 接著，針對置換液供給單元90參照圖4並予以說明。圖4為表示實施型態所涉及之置換液供給單元90之構成的圖。在圖4中，雖然表示在置換液供給單元90連接2個處理單元16之情況的例，但是被連接於1個置換液供給單元90的處理單元16的數量不限定於本例。另外，即使對處理單元16供給蝕刻液的藥液供給單元70之構成也與置換液供給單元90相同亦可。 <Outline of Substitution Fluid Supply Unit> Next, the replacement fluid supply unit 90 will be described with reference to FIG. 4 . FIG. 4 is a diagram showing the configuration of the replacement fluid supply unit 90 according to the embodiment. 4 shows an example in which two processing units 16 are connected to the replacement fluid supply unit 90 , the number of processing units 16 connected to one replacement fluid supply unit 90 is not limited to this example. In addition, the configuration of the chemical liquid supply unit 70 for supplying the etching liquid to the processing unit 16 may be the same as that of the replacement liquid supply unit 90 .

置換液供給單元90具備液槽91、補充部92、排液管線93、循環管線94、供給管線95和返回管線96。The replacement liquid supply unit 90 includes a liquid tank 91 , a replenishing portion 92 , a drain line 93 , a circulation line 94 , a supply line 95 , and a return line 96 .

液槽91貯留IPA。補充部92係對液槽91供給新的IPA。例如，補充部92係在替換液槽91之IPA之情況，或液槽91之IPA少於給定的量之情況，對液槽91供給新的IPA。排液管線93係在替換液槽91之IPA之情況，將IPA從液槽91排出至外部。The liquid tank 91 stores IPA. The replenishing part 92 supplies new IPA to the liquid tank 91 . For example, the replenishing part 92 supplies new IPA to the liquid tank 91 when the IPA of the liquid tank 91 is replaced, or when the IPA of the liquid tank 91 is less than a predetermined amount. The drain line 93 is used to replace the IPA of the liquid tank 91, and discharges the IPA from the liquid tank 91 to the outside.

循環管線94係兩端被連接於液槽91，使從液槽91被送出的IPA返回至液槽91。循環管線94係被設置成使IPA流出液槽91之外部，再次返回至液槽91。Both ends of the circulation line 94 are connected to the liquid tank 91 , and the IPA sent out from the liquid tank 91 is returned to the liquid tank 91 . The circulation line 94 is provided so that IPA flows out of the liquid tank 91 and returns to the liquid tank 91 again.

在循環管線94設置泵浦81、加熱器82、過濾器83、流量計84、溫度感測器85和背壓閥86。該些係在以液槽91為基準的IPA之流動方向中，從上游側依序設置泵浦81、加熱器82、過濾器83、流量計84、溫度感測器85及背壓閥86。A pump 81 , a heater 82 , a filter 83 , a flow meter 84 , a temperature sensor 85 and a back pressure valve 86 are provided in the circulation line 94 . The pump 81 , heater 82 , filter 83 , flow meter 84 , temperature sensor 85 , and back pressure valve 86 are provided in this order from the upstream side in the flow direction of the IPA based on the liquid tank 91 .

泵浦81係在循環管線94壓送IPA。被壓送的IPA在循環管線94循環，被返回至液槽91。Pump 81 pressurizes IPA in recycle line 94 . The pressure-fed IPA circulates through the circulation line 94 and is returned to the liquid tank 91 .

加熱器82係被設置在循環管線94，調整IPA之溫度。具體而言，加熱器82加熱IPA。加熱器82係根據來自控制裝置4之訊號，控制IPA之加熱量，調整IPA之溫度。例如，加熱器82所致之IPA之加熱量係根據藉由溫度感測器85被檢測的IPA之溫度被調整。A heater 82 is provided in the circulation line 94 to adjust the temperature of the IPA. Specifically, the heater 82 heats the IPA. The heater 82 controls the heating amount of the IPA and adjusts the temperature of the IPA according to the signal from the control device 4 . For example, the heating amount of the IPA by the heater 82 is adjusted according to the temperature of the IPA detected by the temperature sensor 85 .

例如，控制裝置4係控制加熱器82，將IPA之溫度調整至給定的溫度。給定的溫度係供給時從處理液供給部40之噴嘴被吐出至晶圓W之IPA之溫度，成為事先被設定的處理溫度的溫度。給定的溫度係根據被設置在每供給管線95等的過濾器73之熱容量等而被設定的溫度。For example, the control device 4 controls the heater 82 to adjust the temperature of the IPA to a predetermined temperature. The predetermined temperature is the temperature that is discharged from the nozzle of the processing liquid supply unit 40 to the IPA of the wafer W at the time of supply, and is the temperature that is the processing temperature set in advance. The predetermined temperature is a temperature set according to the heat capacity and the like of the filter 73 provided in each of the supply lines 95 and the like.

過濾器83係除去在循環管線94流動的IPA所含的微粒等之污染物質的異物。流量計84係測量在循環管線94流動的IPA之流量。溫度感測器85係檢測在循環管線94流動的IPA之溫度。溫度感測器85係被設置在較連接供給管線95之處更上游側的循環管線94。The filter 83 removes foreign matters such as contaminants such as particulates contained in the IPA flowing through the circulation line 94 . Flow meter 84 measures the flow of IPA flowing in recycle line 94 . The temperature sensor 85 detects the temperature of the IPA flowing in the circulation line 94 . The temperature sensor 85 is provided in the circulation line 94 on the upstream side from the point where the supply line 95 is connected.

背壓閥86係在背壓閥86之上游側中的IPA之壓力大於給予的壓力之情況，增大閥開度。背壓閥86係在背壓閥86之上游側中的IPA之壓力小於給定的壓力之情況，縮小閥開度。背壓閥86具有將在上游側之處理液之壓力保持在給定的壓力之功能。給定的壓力為事先被設定的壓力。背壓閥86之閥開度係藉由控制裝置4被控制。The back pressure valve 86 increases the valve opening when the pressure of the IPA in the upstream side of the back pressure valve 86 is greater than the given pressure. The back pressure valve 86 reduces the valve opening degree when the pressure of the IPA in the upstream side of the back pressure valve 86 is lower than a predetermined pressure. The back pressure valve 86 has a function of maintaining the pressure of the processing liquid on the upstream side at a predetermined pressure. The given pressure is a pre-set pressure. The valve opening degree of the back pressure valve 86 is controlled by the control device 4 .

背壓閥86係藉由控制閥開度，能夠調整在循環管線94中IPA的流量。即是，背壓閥86係被設置在循環管線94，調整藉由循環管線94而返回至液槽91的IPA之流量。另外，即使在循環管線94中之IPA之流量藉由控制泵浦81之吐出壓力而被調整亦可。在循環管線94中之IPA之流量係根據藉由流量計84被檢測的IPA之流量而被控制。The back pressure valve 86 can adjust the flow rate of IPA in the circulation line 94 by controlling the valve opening. That is, the back pressure valve 86 is provided in the circulation line 94 , and adjusts the flow rate of the IPA returned to the liquid tank 91 via the circulation line 94 . In addition, the flow rate of IPA in the circulation line 94 may be adjusted by controlling the discharge pressure of the pump 81 . The flow of IPA in recycle line 94 is controlled based on the flow of IPA detected by flow meter 84 .

供給管線95係被連接於循環管線94。供給管線95係被連接於較溫度感測器85更下游側，並且較背壓閥86更上游側之循環管線94。供給管線95係對應於複數處理液供給部40而設置複數。供給管線95係被設置從循環管線94分歧，能夠對處理液供給部40供給IPA。另外，在此，雖然分開說明置換液供給單元90之供給管線95，和處理單元16之供給管線44c，但是即使該些為單一的供給管線亦可。The supply line 95 is connected to the circulation line 94 . The supply line 95 is connected to the circulation line 94 on the downstream side from the temperature sensor 85 and on the upstream side from the back pressure valve 86 . The supply lines 95 are provided in plural numbers corresponding to the plural number of treatment liquid supply units 40 . The supply line 95 is provided to branch from the circulation line 94 and can supply IPA to the processing liquid supply unit 40 . Here, the supply line 95 of the replacement fluid supply unit 90 and the supply line 44c of the processing unit 16 are separately described, but these may be a single supply line.

在供給管線95設置流量計71、定壓閥72和過濾器73。該些係在從循環管線94流至處理液供給部40的IPA之流動方向，從上游側依序設置流量計71、定壓閥72及過濾器73。The flow meter 71 , the constant pressure valve 72 and the filter 73 are provided in the supply line 95 . The flow meter 71 , the constant pressure valve 72 , and the filter 73 are provided in this order from the upstream side in the flow direction of the IPA flowing from the circulation line 94 to the treatment liquid supply unit 40 .

流量計71係測量在循環管線95流動的IPA之流量。定壓閥72係調整較定壓閥72更下游側的IPA之壓力。例如，定壓閥72係以從處理液供給部40之噴嘴被吐出之IPA之吐出量成為給定的吐出量之方式，調整IPA之壓力。即是，定壓閥72係調整從處理液供給部40之噴嘴被吐出之IPA之流量。給定的吐出量為事先設定的量，因應晶圓W之處理條件而被設定。定壓閥72係根據來自控制裝置4之訊號而調整IPA之壓力。Flow meter 71 measures the flow of IPA flowing in recycle line 95 . The constant pressure valve 72 adjusts the pressure of the IPA on the downstream side of the constant pressure valve 72 . For example, the constant pressure valve 72 adjusts the pressure of IPA so that the discharge amount of IPA discharged from the nozzle of the processing liquid supply part 40 becomes a predetermined discharge amount. That is, the constant pressure valve 72 adjusts the flow rate of the IPA discharged from the nozzle of the processing liquid supply part 40 . The predetermined discharge amount is a preset amount, and is set according to the processing conditions of the wafer W. FIG. The constant pressure valve 72 adjusts the pressure of the IPA according to the signal from the control device 4 .

過濾器73係被設置在較返回管線96和供給管線95之連接處更上游側的供給管線95。過濾器73係被設置在較定壓閥72更下游側之供給管線95。過濾器73係除去在供給管線95流動的IPA所含的微粒等之污染物質的異物。The filter 73 is provided in the supply line 95 on the upstream side of the connection between the return line 96 and the supply line 95 . The filter 73 is provided in the supply line 95 on the downstream side of the constant pressure valve 72 . The filter 73 removes foreign matters such as contaminants such as particulates contained in the IPA flowing through the supply line 95 .

返回管線96係被連接於供給管線95，使IPA從供給管線95返回至液槽91。返回管線96係在被設置在過濾器73和閥體45c之間的連接處被連接於供給管線95。返回管線96係對應於複數處理液供給部40而設置複數。在返回管線96設置閥體74。The return line 96 is connected to the supply line 95 to return the IPA from the supply line 95 to the liquid tank 91 . The return line 96 is connected to the supply line 95 at the connection provided between the filter 73 and the valve body 45c. The return lines 96 are provided in plural numbers corresponding to the plural number of treatment liquid supply units 40 . Valve body 74 is provided in return line 96 .

閥體74係切換在返回管線96中有無IPA之流動。藉由開啟閥體74，IPA從供給管線95流至返回管線96。在返回管線96流動的IPA返回至液槽91。藉由關閉液槽74，在返回管線96不流動IPA。閥體74係根據來自控制裝置4之訊號而被開關。The valve body 74 switches the flow of IPA in the return line 96 with and without it. IPA flows from supply line 95 to return line 96 by opening valve body 74 . The IPA flowing in return line 96 is returned to tank 91 . By closing sump 74, IPA does not flow in return line 96. The valve body 74 is opened and closed according to the signal from the control device 4 .

複數返回管線96係在返回管線96流動的IPA之流動方向中，於較閥體74更下游側合流，被連接於液槽91。在較複數返回管線96合流之處更下游側之返回管線96，設置溫度感測器75。溫度感測器75係檢測從返回管線96返回至液槽91之IPA的溫度。另外，即使返回管線96被連接於較背壓閥86更下游側之循環管線94亦可。The plurality of return lines 96 merge on the downstream side of the valve body 74 in the flow direction of the IPA flowing through the return lines 96 , and are connected to the liquid tank 91 . The temperature sensor 75 is provided in the return line 96 on the downstream side of the place where the plurality of return lines 96 join. The temperature sensor 75 detects the temperature of the IPA returned from the return line 96 to the tank 91 . In addition, the return line 96 may be connected to the circulation line 94 on the downstream side of the back pressure valve 86 .

控制裝置4係於從處理液供給部40對晶圓W供給IPA之供給時，關閉被設置在返回管線96之閥體74，開啟被設置在處理單元16的閥體45c。依此，IPA不流入至返回管線96，而從處理液供給部40之噴嘴被吐出。另一方面，在不從處理液供給部40對晶圓W供給IPA之待機時，控制裝置4係關閉被設置在處理單元16之閥體45c，開啟被設置在返回管線96的閥體74。依此，IPA不從處理液供給部40之噴嘴被吐出而經由返回管線96被返回至液槽91。The control device 4 closes the valve body 74 provided in the return line 96 and opens the valve body 45c provided in the processing unit 16 when supplying IPA from the processing liquid supply unit 40 to the wafer W. In this way, the IPA does not flow into the return line 96 , but is discharged from the nozzle of the processing liquid supply unit 40 . On the other hand, when the IPA is not supplied to the wafer W from the processing liquid supply unit 40 , the control device 4 closes the valve 45 c provided in the processing unit 16 and opens the valve 74 provided in the return line 96 . In this way, the IPA is returned to the liquid tank 91 via the return line 96 without being discharged from the nozzle of the processing liquid supply unit 40 .

如此一來，在實施型態所涉及之基板處理系統1中，可以使用置換液供給單元90將被調整成給定的溫度的IPA供給至複數處理單元16。並且，在實施型態所涉及之基板處理系統1中，可以使用被設置在各處理單元16之溫度調整部46c而在各處理單元16個別地調整IPA之溫度。In this way, in the substrate processing system 1 according to the embodiment, IPA adjusted to a predetermined temperature can be supplied to the plurality of processing units 16 using the replacement liquid supply unit 90 . Furthermore, in the substrate processing system 1 according to the embodiment, the temperature of the IPA can be individually adjusted in each processing unit 16 using the temperature adjusting unit 46 c provided in each processing unit 16 .

＜控制裝置之構成＞ 接著，針對實施型態所涉及之控制裝置4的構成，參照圖5予以說明。圖5為表示實施型態所涉及之控制裝置4之構成的方塊圖。 <Configuration of control device> Next, the configuration of the control device 4 according to the embodiment will be described with reference to FIG. 5 . FIG. 5 is a block diagram showing the configuration of the control device 4 according to the embodiment.

如圖5所示般，實施型態所涉及之控制裝置4具備控制部18和記憶部19。As shown in FIG. 5 , the control device 4 according to the embodiment includes a control unit 18 and a memory unit 19 .

記憶部19藉由例如，RAM(Random Access Memory)、快閃記憶體(Flash Memory)等之半導體記憶體元件或硬碟、光碟等之記憶裝置而被實現。記憶部19係記憶配方資訊191、收集資訊192、模型式193、溫度分布資訊194和指定資訊195。The memory unit 19 is realized by, for example, a semiconductor memory element such as a RAM (Random Access Memory) and a flash memory (Flash Memory), or a memory device such as a hard disk or an optical disk. The memory unit 19 stores recipe information 191 , collection information 192 , model formula 193 , temperature distribution information 194 and designation information 195 .

控制部18係藉由依據例如CPU(Central Processing Unit)或MPU(Micro Processing Unit)等，使被記憶於控制裝置4內部之記憶部(例如記憶部19等)的各種程式以RAM為作業區域而被實行來實現。再者，即使控制部18藉由例如ASIC(Application Specific Integrated Circuit)或FPGA(Field Programmable Gate Array)等之積體電路而被實現亦可。The control unit 18 uses the RAM as a work area to execute various programs stored in the memory unit (eg, the memory unit 19 , etc.) in the control device 4 according to, for example, a CPU (Central Processing Unit), an MPU (Micro Processing Unit), or the like. be implemented to achieve. Furthermore, the control unit 18 may be realized by an integrated circuit such as an ASIC (Application Specific Integrated Circuit) or an FPGA (Field Programmable Gate Array).

控制部18具備動作控制部181、收集部182、監視部183、判定部184和異常對應處理部185，實現或實行以下說明的處理之功能或作用。另外，控制部18之內部構成不限定於圖5所示的構成，若為後述能夠實行基板處理等的構成時即使為其他構成亦可。再者，控制部18具有的各處理部之連接關係不限定於圖5所示的連接關係，即使為其他連接關係亦可。The control unit 18 includes an operation control unit 181 , a collection unit 182 , a monitoring unit 183 , a determination unit 184 , and an abnormality response processing unit 185 , and realizes or executes the functions or actions of the processing described below. In addition, the internal structure of the control part 18 is not limited to the structure shown in FIG. 5, If it is a structure which can perform a board|substrate processing etc. which will be mentioned later, it may be another structure. In addition, the connection relationship of each processing part which the control part 18 has is not limited to the connection relationship shown in FIG. 5, and may be other connection relationship.

動作控制部181係藉由根據被記憶於記憶部19之配方資訊191而控制處理單元16，使處理單元16實行對晶圓W的一連串的液處理。The operation control unit 181 controls the processing unit 16 according to the recipe information 191 stored in the memory unit 19 , so that the processing unit 16 executes a series of liquid processing on the wafer W.

配方資訊191係表示對處理單元16實行的液處理之內容及順序的資訊，包含規定液處理之處理條件的複數參數值。例如，配方資訊191包含處理時間、晶圓W之旋轉數、處理液之種類、處理液之吐出流量、處理液之吐出溫度等的參數值。該些參數值被限定於一連串的液處理所含的每處理。The recipe information 191 is information indicating the content and order of liquid processing performed by the processing unit 16, and includes plural parameter values specifying processing conditions of the liquid processing. For example, the recipe information 191 includes parameter values such as the processing time, the rotation number of the wafer W, the type of the processing liquid, the discharge flow rate of the processing liquid, and the discharge temperature of the processing liquid. These parameter values are limited to each treatment contained in a series of liquid treatments.

在此，針對依照動作控制部181所致的控制而被實行的液處理之例，參照圖6予以說明。圖6為表示實施型態所涉及的處理單元16實行的液處理之順序的流程圖。圖6所示的一連串的液處理係依照配方資訊191而被實行。Here, an example of liquid processing performed in accordance with the control by the operation control unit 181 will be described with reference to FIG. 6 . FIG. 6 is a flowchart showing the procedure of liquid processing performed by the processing unit 16 according to the embodiment. A series of liquid treatments shown in FIG. 6 are carried out according to the recipe information 191 .

首先，處理單元16係使用基板保持機構30之保持部31保持藉由基板搬運裝置17(參照圖1)而被搬入至腔室20內的晶圓W。具體而言，處理單元16係使用複數把持部31a而把持晶圓W之端部。之後，處理單元16係藉由使用驅動部33而使保持部31繞垂直軸旋轉，使晶圓W旋轉。First, the processing unit 16 uses the holding portion 31 of the substrate holding mechanism 30 to hold the wafer W carried into the chamber 20 by the substrate transfer device 17 (see FIG. 1 ). Specifically, the processing unit 16 holds the end portion of the wafer W using the plurality of holding portions 31a. After that, the processing unit 16 rotates the wafer W by rotating the holding part 31 around the vertical axis by using the driving part 33 .

接著，處理單元16係進行蝕刻處理(步驟S01)。在蝕刻處理中，首先，使用處理液供給部40之移動機構43而使噴嘴41位於晶圓W之中央上方。之後，處理單元16係藉由開啟閥體45a，從噴嘴41對旋轉的晶圓W之表面供給蝕刻液。被供給至晶圓W之中央的蝕刻液係隨著晶圓W之旋轉而在晶圓W之全面擴散。依此，晶圓W之表面被蝕刻處理。之後，處理單元16係藉由關閉閥體45a，停止對晶圓W供給蝕刻液。Next, the processing unit 16 performs an etching process (step S01). In the etching process, first, the nozzle 41 is positioned above the center of the wafer W using the moving mechanism 43 of the processing liquid supply unit 40 . After that, the processing unit 16 supplies the etching solution to the surface of the rotating wafer W from the nozzle 41 by opening the valve body 45a. The etching solution supplied to the center of the wafer W spreads over the entire surface of the wafer W as the wafer W rotates. Accordingly, the surface of the wafer W is etched. After that, the processing unit 16 stops supplying the etching solution to the wafer W by closing the valve body 45a.

接著，處理單元16係進行沖洗處理(步驟S02)。在沖洗處理中，藉由開啟閥體45b，從噴嘴41對旋轉的晶圓W之表面供給DIW。被供給至晶圓W之中央的DIW係隨著晶圓W之旋轉而在晶圓W之全面擴散。依此，殘存在晶圓W之表面的蝕刻液藉由DIW被沖洗。之後，處理單元16係藉由關閉閥體45b，停止對晶圓W供給DIW。Next, the processing unit 16 performs a flushing process (step S02). During the rinsing process, DIW is supplied from the nozzle 41 to the surface of the rotating wafer W by opening the valve body 45b. The DIW supplied to the center of the wafer W spreads over the entire surface of the wafer W as the wafer W rotates. In this way, the etching solution remaining on the surface of the wafer W is washed by DIW. After that, the processing unit 16 stops the supply of DIW to the wafer W by closing the valve body 45b.

接著，處理單元16係進行置換處理(步驟S03)。在置換處理中，藉由開啟閥體45c，從噴嘴41對旋轉的晶圓W之表面供給IPA。被供給至晶圓W之中央的IPA係隨著晶圓W之旋轉而在晶圓W之全面擴散。依此，殘存在晶圓W之表面的DIW被置換成IPA。之後，處理單元16係藉由關閉閥體45c，停止對晶圓W供給IPA。Next, the processing unit 16 performs replacement processing (step S03). In the replacement process, by opening the valve body 45c, the IPA is supplied from the nozzle 41 to the surface of the rotating wafer W. The IPA supplied to the center of the wafer W spreads over the entire surface of the wafer W as the wafer W rotates. Accordingly, the DIW remaining on the surface of the wafer W is replaced with IPA. After that, the processing unit 16 stops supplying the IPA to the wafer W by closing the valve body 45c.

接著，處理單元16係進行乾燥處理(步驟S04)。在乾燥處理中，藉由使用驅動部33以較在步驟S01～S03中之旋轉數更高速使晶圓W旋轉，使晶圓W乾燥。之後，晶圓W藉由基板搬運裝置17從腔室20被搬出。依此，結束藉由對一片晶圓W進行的一連串的液處理。Next, the processing unit 16 performs a drying process (step S04). In the drying process, the wafer W is dried by rotating the wafer W at a higher speed than the rotation number in steps S01 to S03 using the drive unit 33 . After that, the wafer W is carried out from the chamber 20 by the substrate transfer device 17 . In this way, a series of liquid processing performed on one wafer W is completed.

返回至圖5。收集部182係在液處理中，從處理單元16之第1溫度感測器110取得溫度資料，將取得的溫度資料作為在收集資訊192中之「中心溫度」項目而記憶於記憶部19。例如，收集部182係對一連串的液處理所含的各個處理(蝕刻處理、沖洗處理、置換處理及乾燥處理)，算出在各處理中藉由第1溫度感測器110被檢測的溫度之平均值，將算出的平均值作為在各處理中的晶圓W之「中心溫度」而記憶於記憶部19。Return to Figure 5. The collection unit 182 acquires temperature data from the first temperature sensor 110 of the processing unit 16 during liquid processing, and stores the acquired temperature data in the memory unit 19 as an item of “core temperature” in the collection information 192 . For example, the collection unit 182 calculates the average of the temperatures detected by the first temperature sensor 110 in each process for each process (etching process, rinsing process, replacement process, and drying process) included in a series of liquid processes The calculated average value is stored in the memory unit 19 as the "core temperature" of the wafer W in each process.

再者，收集部182係在液處理中，從處理單元16之複數第2溫度感測器120取得溫度資料，將取得的溫度資料作為在收集資訊192中之「邊緣溫度」項目而記憶於記憶部19。例如，收集部182係對一連串的液處理所含的各個處理，算出在各處理中藉由第2溫度感測器120被檢測的溫度之平均值，將算出的平均值作為在各處理中的晶圓W之「邊緣溫度」而記憶於記憶部19。Furthermore, the collecting unit 182 obtains temperature data from the plurality of second temperature sensors 120 of the processing unit 16 during liquid processing, and stores the obtained temperature data in the memory as an item of “edge temperature” in the collecting information 192 . Section 19. For example, the collection unit 182 calculates the average value of the temperatures detected by the second temperature sensor 120 in each process for each process included in a series of liquid processes, and uses the calculated average value as the average value in each process. The "edge temperature" of the wafer W is stored in the memory unit 19 .

收集部182也收集上述中心溫度及邊緣溫度以外的資訊。例如，收集部182係收集腔室20內之溫度，而作為在收集資訊192中之「空間溫度」項目而記憶於記憶部19。腔室20內之溫度即使藉由例如被設置在腔室20之內部的無圖示的溫度感測器而取得亦可，即使從潔淨氣體供給源21b中之潔淨氣體之設定溫度取得亦可。The collecting unit 182 also collects information other than the above-described center temperature and edge temperature. For example, the collection part 182 collects the temperature in the chamber 20 and stores it in the memory part 19 as the item "spatial temperature" in the collection information 192 . The temperature in the chamber 20 may be acquired by, for example, a temperature sensor (not shown) provided inside the chamber 20, or may be acquired from the set temperature of the clean gas in the clean gas supply source 21b.

再者，收集部182係收集腔室20內之濕度，而作為在收集資訊192中之「空間濕度」項目而記憶於記憶部19。腔室20內之濕度即使藉由例如被設置在腔室20之內部的無圖示的濕度感測器而取得亦可，即使從潔淨氣體供給源21b中之潔淨氣體之設定濕度取得亦可。Furthermore, the collecting unit 182 collects the humidity in the chamber 20 and stores it in the memory unit 19 as an item of “spatial humidity” in the collected information 192 . The humidity in the chamber 20 may be acquired by, for example, a humidity sensor (not shown) provided inside the chamber 20, or may be acquired from the set humidity of the clean gas in the clean gas supply source 21b.

再者，收集部182係從配方資訊191收集吐出流量及旋轉數之資訊，分別作為在收集資訊192中之「吐出流量」項目及「旋轉數」項目而記憶於記憶部19。另外，即使收集部182係從被設置在例如供給管線44a～44c之無圖示的流量計收集流量之檢測結果，作為「吐出流量」項目而記憶於記憶部19亦可。再者，收集部182即使係從檢測例如支柱部32之旋轉數的旋轉編碼器等的無圖示的旋轉數感測器收集旋轉數之檢測結果，作為「旋轉數」項目而記憶於記憶部19亦可。Furthermore, the collecting unit 182 collects the information of the discharge flow rate and the number of revolutions from the recipe information 191 , and stores them in the memory unit 19 as the items of “discharge flow rate” and “number of revolutions” in the collected information 192 , respectively. In addition, even if the collection part 182 collects the detection result of the flow rate from the flow meter installed in the supply lines 44a-44c, for example, not shown, it may be stored in the memory part 19 as an item of "discharge flow rate". In addition, even if the collection unit 182 collects the detection result of the rotation number from a rotation number sensor (not shown) such as a rotary encoder that detects the rotation number of the support section 32, for example, the result is stored in the memory section as an item of "number of rotations". 19 is also possible.

其他，收集部182即使係收集例如腔室20之排氣流量、處理液之密度及處理液之熱容量等之資訊而作為收集資訊192而記憶於記憶部19亦可。Otherwise, the collecting unit 182 may collect information such as the exhaust flow rate of the chamber 20 , the density of the processing liquid, and the heat capacity of the processing liquid, and store it in the memory unit 19 as the collected information 192 .

圖7為表示實施型態所涉及的收集資訊192之例的圖。如圖7所示般，收集資訊192係「晶圓ID」、「批量ID」、「單元ID」、「處理內容」、「中心溫度」、「邊緣溫度」、「空間溫度」、「空間濕度」、「吐出流量」及「旋轉數」之各項目等互相建立關聯性的資訊。FIG. 7 is a diagram showing an example of the collection information 192 according to the embodiment. As shown in FIG. 7, the collection information 192 is "wafer ID", "lot ID", "unit ID", "processing content", "center temperature", "edge temperature", "space temperature", "space humidity" ”, “discharge flow rate”, and “number of rotations” items that are related to each other.

在「晶圓ID」項目儲存晶圓W之識別資訊。在「批量ID」項目儲存晶圓W所屬的批量之識別資訊。批量為製品晶圓之製造單位。例如，有將25片單位的晶圓W稱為1批量的情況。在「單元ID」項目儲存對晶圓W進行處理後的處理單元16之識別資訊。在「處理內容」項目儲存識別一連串的液處理所含的各處理之內容的資訊。另外，在圖7中，「S101」為蝕刻處理之識別資訊，「S102」為沖洗處理之識別資訊，「S103」為置換處理之識別資訊，「S104」為乾燥處理之識別資訊的一例。The identification information of the wafer W is stored in the "Wafer ID" item. The identification information of the lot to which the wafer W belongs is stored in the item "lot ID". Lot is the manufacturing unit of finished wafers. For example, 25 wafers W may be referred to as one lot. The identification information of the processing unit 16 after processing the wafer W is stored in the item "unit ID". Information identifying the content of each process included in a series of liquid processes is stored in the item "process content". 7, "S101" is the identification information of the etching process, "S102" is the identification information of the rinsing process, "S103" is the identification information of the replacement process, and "S104" is an example of the identification information of the drying process.

「中心溫度」係指在液處理中之晶圓W之中心部的溫度。在「中心溫度」項目儲存基於藉由第1溫度感測器110被檢測到的溫度資料的資訊(例如，在處理中被檢測到的溫度資料之平均值)。「邊緣溫度」係指在液處理中之晶圓W之端部的溫度。在該「邊緣溫度」項目儲存基於藉由複數第2溫度感測器120被檢測到的溫度資料的資訊(例如，在處理中被檢測到的溫度資料之平均值)。The "center temperature" refers to the temperature of the center portion of the wafer W under liquid processing. Information based on the temperature data detected by the first temperature sensor 110 (for example, the average value of the temperature data detected during processing) is stored in the "core temperature" item. "Edge temperature" refers to the temperature of the end of the wafer W under liquid processing. Information based on the temperature data detected by the plurality of second temperature sensors 120 (eg, the average value of the temperature data detected during processing) is stored in the "edge temperature" item.

「空間溫度」係指腔室20內的溫度，「空間濕度」係指腔室20內之濕度。在「空間溫度」項目及「空間濕度」項目，儲存藉由例如被設置在腔室20之內部的無圖示之溫度感測器及濕度感測器而被檢測到的溫度及濕度。“Space temperature” refers to the temperature in the chamber 20 , and “spatial humidity” refers to the humidity in the chamber 20 . In the item "room temperature" and the item "room humidity", the temperature and humidity detected by, for example, a temperature sensor and a humidity sensor not shown, which are provided inside the chamber 20, are stored.

「吐出流量」係指處理液之吐出流量，「旋轉數」係指晶圓W之旋轉數。在「吐出流量」項目及「旋轉數」項目，儲存從例如配方資訊191被收集的吐出流量及旋轉數的資訊。The “discharge flow rate” refers to the discharge flow rate of the processing liquid, and the “number of revolutions” refers to the number of revolutions of the wafer W. In the item "discharge flow rate" and the item "number of revolutions", the information of the discharge flow rate and the number of revolutions collected from, for example, the recipe information 191 is stored.

監視部183係監視在液處理中的晶圓W之面內溫度分布。具體而言，監視部183係使用被記憶於記憶部19之收集資訊192，和模型式193，生成表示在如此的晶圓W之液處理中之面內溫度分布的溫度分布資訊194，將所生成的溫度分布資訊194儲存於記憶部19。The monitoring unit 183 monitors the in-plane temperature distribution of the wafer W during liquid processing. Specifically, the monitoring unit 183 uses the collected information 192 stored in the memory unit 19 and the model formula 193 to generate the temperature distribution information 194 representing the in-plane temperature distribution during the liquid processing of the wafer W as described above, The generated temperature distribution information 194 is stored in the memory unit 19 .

在此，模型式193係用以推定在液處理中之晶圓W之面內溫度分布的模型式。具體而言，模型式193係從藉由第1溫度感測器110及第2溫度感測器120被檢測的晶圓W之局部性的溫度，使用已知的參數值而推定晶圓W之面內全體之溫度分布的模型式。再者，當從另外觀點來看時，模型式193係根據實測值(感測值)補正從已知的處理條件(參數值)被導出的晶圓W之面內溫度分布的理論值的模型式。Here, the model expression 193 is a model expression for estimating the in-plane temperature distribution of the wafer W under liquid processing. Specifically, the model expression 193 estimates the temperature of the wafer W from the local temperature of the wafer W detected by the first temperature sensor 110 and the second temperature sensor 120 using known parameter values. A model formula for the temperature distribution of the whole in-plane. Furthermore, when viewed from another point of view, the model formula 193 is a model for correcting the theoretical value of the in-plane temperature distribution of the wafer W derived from the known processing conditions (parameter values) based on the actual measured value (sensed value). Mode.

監視部183係當完成對晶圓W的一連串的液處理時，從記憶部19取得針對液處理完成的晶圓W的收集資訊192。而且，監視部183係藉由將所取得的收集資訊192所含的參數值及感測值代入至模型式193，生成表示在液處理中之晶圓W之面內溫度分布的溫度分布資訊194。The monitoring unit 183 acquires the collection information 192 for the wafer W for which the liquid processing has been completed from the memory unit 19 when the series of liquid processing on the wafer W is completed. Then, the monitoring unit 183 generates the temperature distribution information 194 representing the in-plane temperature distribution of the wafer W under liquid processing by substituting the parameter values and the sensed values included in the acquired collection information 192 into the model expression 193 . .

具體而言，藉由模型式193，能取得從晶圓W之中心部至端部之間的複數點中的溫度。監視部183係藉由使用例如回歸分析(曲線擬合)等之方法而推定在上述複數點中之鄰接點間的溫度，生成溫度分布資訊194，將生成的溫度分布資訊194儲存於記憶部19。監視部183係對一連串的液處理所含的處理，生成溫度分布資訊194。Specifically, the temperature at a plurality of points from the center portion to the end portion of the wafer W can be obtained by the model formula 193 . The monitoring unit 183 estimates the temperature between adjacent points among the above-mentioned plural points by using a method such as regression analysis (curve fitting), generates temperature distribution information 194, and stores the generated temperature distribution information 194 in the memory unit 19 . The monitoring unit 183 generates temperature distribution information 194 for processing included in a series of liquid processing.

圖8為表示實施型態所涉及的溫度分部資訊194之例的圖。在圖8中，表示直徑300mm之晶圓W之溫度分布資訊194的例。圖8所示的曲線圖之橫軸的晶圓位置，係表示以晶圓W之中心部為基準(0mm)之時的離中心部的距離。FIG. 8 is a diagram showing an example of the temperature division information 194 according to the embodiment. In FIG. 8, an example of the temperature distribution information 194 of the wafer W with a diameter of 300 mm is shown. The wafer position on the horizontal axis of the graph shown in FIG. 8 represents the distance from the center when the center of the wafer W is taken as a reference (0 mm).

如圖8所示般，溫度分布資訊194係表示沿著晶圓W之徑向的各位置(晶圓位置)中之處理中的溫度(晶圓溫度)的資訊。例如，圖8中，黑圓圈係從模型式193取得的資料，連結黑圓圈的線係藉由回歸分析等而被插補的資料。另外，在圖8中，為了容易理解，雖然例示曲線圖形式的溫度分布資訊194，但是溫度分布資訊194不一定需要曲線圖形式。As shown in FIG. 8 , the temperature distribution information 194 is information indicating the temperature during processing (wafer temperature) at each position (wafer position) in the radial direction of the wafer W. As shown in FIG. For example, in FIG. 8 , the black circles represent data obtained from the model expression 193, and the lines connecting the black circles represent data interpolated by regression analysis or the like. In addition, in FIG. 8, although the temperature distribution information 194 in the form of a graph is exemplified for easy understanding, the temperature distribution information 194 does not necessarily need to be in the form of a graph.

判定部184係根據被記憶於記憶部19之溫度分布資訊194，而判定對晶圓W進行的液處理之結果的好壞。判定部184係對一連串的液處理所含的各個處理(蝕刻處理、沖洗處理、置換處理及乾燥處理)判定處理結果之好壞。The determination unit 184 determines whether the result of the liquid processing performed on the wafer W is good or bad based on the temperature distribution information 194 stored in the memory unit 19 . The judgment unit 184 judges whether the processing results are good or bad for each processing (etching processing, rinsing processing, replacement processing, and drying processing) included in a series of liquid processing.

在此，針對蝕刻處理之良品判定的例，參照圖9～圖12予以說明。圖9為表示蝕刻率換算處理之例的圖。圖10為表示判定有無晶圓W間差之例的圖。圖11為表示判定有無處理單元16間差之例的圖。圖12為表示判定有無批量間差之例的圖。Here, an example of the good product determination of the etching process will be described with reference to FIGS. 9 to 12 . FIG. 9 is a diagram showing an example of an etching rate conversion process. FIG. 10 is a diagram showing an example of determining the presence or absence of a difference between wafers W. FIG. FIG. 11 is a diagram showing an example of determining the presence or absence of a difference between the processing units 16 . FIG. 12 is a diagram showing an example of determining the presence or absence of a difference between batches.

如圖9所示般，判定部184係表示溫度和蝕刻率之關係的靈敏度資料，將溫度分布資訊194轉換成蝕刻率分布資訊。蝕刻率分布資訊係表示沿著晶圓W之徑向的各位置(晶圓位置)中之蝕刻率(Å/min)的資訊。蝕刻率分布資訊係與例如晶圓ID、批量ID及單元ID等建立關聯性而儲存於記憶部19。As shown in FIG. 9, the determination part 184 is the sensitivity data which shows the relationship between temperature and an etching rate, and converts the temperature distribution information 194 into etching rate distribution information. The etching rate distribution information is information indicating the etching rate (Å/min) in each position (wafer position) along the radial direction of the wafer W. FIG. The etching rate distribution information is associated with, for example, wafer ID, lot ID, and cell ID, and is stored in the memory unit 19 .

接著，判定部184係依照蝕刻率分布資訊而判定蝕刻處理之好壞。例如，判定部184係使用蝕刻率分布資訊而算出晶圓W之面內全體的蝕刻率之平均值。而且，判定部184係判定所算出的平均值是否超過事先設定的臨界值。若所算出的平均值超過臨界值時，判定部184將蝕刻處理之結果判定為正常，若為臨界值以下時，將蝕刻處理之結果判定為異常。Next, the determination part 184 determines whether the etching process is good or bad according to the etching rate distribution information. For example, the determination part 184 calculates the average value of the etching rate of the whole in-plane of the wafer W using the etching rate distribution information. Then, the determination unit 184 determines whether or not the calculated average value exceeds a predetermined threshold value. When the calculated average value exceeds the threshold value, the determination unit 184 determines that the result of the etching process is normal, and when it is equal to or less than the threshold value, determines that the result of the etching process is abnormal.

再者，判定部184係參照蝕刻率分布資訊，算出蝕刻率之最大值及最小值的偏差率。例如，判定部184係算出相對於最大值的最大值和最小值的差之比例(%)，作為偏差率。判定部184係判定所算出的偏差率是否低於事先設定的臨界值。而且，若所算出的偏差率低於臨界值時，判定部184將蝕刻處理之面內均勻性判定為正常。另一方面，若所算出的偏差率為臨界值以上之情況，判定部184將蝕刻處理之面內均勻性判定為異常。In addition, the determination part 184 calculates the deviation rate of the maximum value and the minimum value of an etching rate with reference to the etching rate distribution information. For example, the determination unit 184 calculates the ratio (%) of the difference between the maximum value and the minimum value with respect to the maximum value as the deviation rate. The determination unit 184 determines whether or not the calculated deviation rate is lower than a predetermined threshold value. Then, when the calculated deviation rate is lower than the threshold value, the determination unit 184 determines that the in-plane uniformity of the etching process is normal. On the other hand, when the calculated deviation rate is not less than the threshold value, the determination unit 184 determines that the in-plane uniformity of the etching process is abnormal.

如此一來，判定部184可以根據其晶圓W之溫度分布資訊194，對每晶圓W判定相對於晶圓W的蝕刻處理的好壞。In this way, the determination unit 184 can determine the quality of the etching process relative to the wafer W for each wafer W based on the temperature distribution information 194 of the wafer W.

再者，即使判定部184判定有無蝕刻處理之晶圓W間差亦可。例如，在圖10中，表示針對晶圓ID「W1」、「W2」、「W3」及「W4」之4個晶圓W的蝕刻平均值及蝕刻均勻性之結果的例。在圖10中之蝕刻平均值係指上述蝕刻率之平均值，蝕刻均勻性係指上述蝕刻率之偏差率。圖10所示的4個晶圓W之蝕刻平均值及蝕刻均勻性皆設為被判定正常的值。Furthermore, the determination unit 184 may determine whether there is a difference between the wafers W in the etching process. For example, FIG. 10 shows an example of etching average value and etching uniformity results for four wafers W with wafer IDs “W1”, “W2”, “W3” and “W4”. The etching average value in FIG. 10 refers to the average value of the above-mentioned etching rate, and the etching uniformity refers to the deviation ratio of the above-mentioned etching rate. The etching average value and the etching uniformity of the four wafers W shown in FIG. 10 are both determined to be normal values.

如圖10所示般，晶圓ID「W4」之晶圓W之蝕刻平均值及蝕刻均勻性，設為與剩下的3個晶圓W之蝕刻平均值及蝕刻均勻性存在偏差者。在如此之情況，判定部184判定在晶圓ID「W4」之晶圓W產生蝕刻處理(蝕刻平均值及蝕刻均勻性)之晶圓W間差。As shown in FIG. 10 , the average etching value and the etching uniformity of the wafer W of the wafer ID “W4” are set as those with deviations from the etching average value and the etching uniformity of the remaining three wafers W. In such a case, the determination unit 184 determines that the difference between the wafers W in the etching process (etching average value and etching uniformity) occurs in the wafer W of the wafer ID "W4".

就以一例而言，判定部184係蓄積過去進行液處理後的晶圓W之蝕刻平均值及蝕刻均勻性之資訊，從蓄積的該些資訊，算出蝕刻平均值及蝕刻均勻性的基準值(例如平均值)。而且，判定部184係對每晶圓W，算出從蝕刻平均值及蝕刻均勻性之基準值的偏差，在所算出的偏差超過事先設定的臨界值之情況，判定為產生晶圓W間差。As an example, the determination unit 184 accumulates the information of the etching average value and the etching uniformity of the wafer W after the liquid treatment in the past, and calculates the etching average value and the etching uniformity reference value ( e.g. average). Then, the determination unit 184 calculates the deviation from the etching average value and the reference value of the etching uniformity for each wafer W, and determines that a difference between wafers W occurs when the calculated deviation exceeds a predetermined threshold value.

再者，即使判定部184判定有無蝕刻處理之處理單元16間差亦可。例如，在圖11中，針對單元ID「U1」、「U2」、「U3」及「U4」之4個處理單元16，表示在各處理單元16被處理後的複數晶圓W之蝕刻平均值及蝕刻均勻性的平均值。以下，將在某處理單元16被處理後的複數晶圓W之蝕刻平均值及蝕刻均勻性之平均值，記載為其處理單元16之蝕刻平均值及蝕刻均勻性。Furthermore, the determination unit 184 may determine whether there is a difference between the processing units 16 of the etching process. For example, in FIG. 11 , for the four processing units 16 with unit IDs “U1”, “U2”, “U3” and “U4”, the etching average value of the plurality of wafers W processed by each processing unit 16 is shown. and average etching uniformity. Hereinafter, the average etching value and the etching uniformity of the plurality of wafers W processed by a certain processing unit 16 will be described as the etching average value and the etching uniformity of the processing unit 16 .

如圖11所示般，單元ID「U4」之處理單元16之蝕刻平均值及蝕刻均勻性，設為與剩下的3個處理單元16之蝕刻平均值及蝕刻均勻性存在偏差者。在如此之情況，判定部184判定為在單元ID「U4」之處理單元16產生蝕刻平均值及蝕刻均勻性之處理單元16間差。As shown in FIG. 11 , the etching average value and the etching uniformity of the processing unit 16 of the unit ID “U4” are set as those with deviations from the etching average value and etching uniformity of the remaining three processing units 16 . In such a case, the determination unit 184 determines that the difference between the processing units 16 of the etching average value and the etching uniformity has occurred in the processing unit 16 of the unit ID "U4".

就以一例而言，判定部184係在每處理單元16蓄積過去進行液處理後的晶圓W之蝕刻平均值及蝕刻均勻性之資訊，從蓄積的資訊，算出蝕刻平均值及蝕刻均勻性的每處理單元16之平均值。再者，判定部184係藉由算出對每處理單元16所算出的上述平均值之平均值，取得蝕刻平均值及蝕刻均勻性的基準值。而且，判定部184係對每處理單元16，算出從蝕刻平均值及蝕刻均勻性之基準值的偏差，在所算出的偏差超過事先設定的臨界值之情況，判定為產生處理單元16間差。As an example, the determination unit 184 accumulates the information of the etching average value and the etching uniformity of the wafer W after the liquid processing in the past for each processing unit 16, and calculates the etching average value and the etching uniformity from the accumulated information. Average value per processing unit 16. In addition, the determination part 184 acquires the reference value of an etching average value and an etching uniformity by calculating the average value of the said average value calculated for each processing unit 16. FIG. Then, the determination unit 184 calculates the deviation from the etching average value and the reference value of the etching uniformity for each processing unit 16, and determines that the difference between the processing units 16 occurs when the calculated deviation exceeds a predetermined threshold value.

再者，即使判定部184判定有無蝕刻處理之批量間差亦可。例如，在圖12中，針對批量ID「L1」、「L2」、「L3」及「L4」之4個批量，表示各批量所含的複數晶圓W之蝕刻平均值及蝕刻均勻性的平均值。以下，將在某批量所含的複數晶圓W之蝕刻平均值及蝕刻均勻性之平均值，記載為其批量之蝕刻平均值及蝕刻均勻性。Furthermore, the determination unit 184 may determine whether there is a lot-to-lot difference in the etching process. For example, in FIG. 12, for four lots with lot IDs "L1", "L2", "L3", and "L4", the average etching value and the etching uniformity of the plurality of wafers W included in each lot are shown value. Hereinafter, the mean value of etching and the mean value of etching uniformity of a plurality of wafers W included in a certain lot are described as the mean value of etching and the mean value of etching uniformity of the batch.

如圖12所示般，批量ID「L4」之批量之蝕刻平均值及蝕刻均勻性，設為與剩下的3個批量之蝕刻平均值及蝕刻均勻性存在偏差。在如此之情況，判定部184係判定在批量ID「L4」之批量，產生蝕刻平均值及蝕刻均勻性之批量間差。As shown in FIG. 12 , the etching average value and the etching uniformity of the lot with the lot ID “L4” are set to have deviations from the etching average value and the etching uniformity of the remaining three batches. In such a case, the determination unit 184 determines that in the lot with the lot ID "L4", there is a lot-to-lot difference in the etching average value and the etching uniformity.

就以一例而言，判定部184係對每批量蓄積其批量所含的複數晶圓W之蝕刻平均值及蝕刻均勻性之資訊。再者，判定部184係從蓄積的蝕刻平均值及蝕刻均勻性之資訊，對每批量，算出蝕刻平均值及蝕刻均勻性之平均值。再者，判定部184係藉由算出對每批量算出的上述平均值之平均值，取得蝕刻平均值及蝕刻均勻性的基準值。而且，判定部184係對每批量算出從蝕刻平均值及蝕刻均勻性之基準值的偏差，在算出的偏差超過事先設定的臨界值之情況，判定為產生批量間差。As an example, the determination unit 184 accumulates the information of the etching average value and the etching uniformity of the plurality of wafers W included in the lot for each lot. Furthermore, the determination part 184 calculates the average value of etching and the average value of etching uniformity for each batch from the information of the accumulated etching average value and etching uniformity. In addition, the determination part 184 acquires the reference value of an etching average value and an etching uniformity by calculating the average value of the said average value calculated for every batch. Then, the determination unit 184 calculates the deviation from the etching average value and the reference value of the etching uniformity for each lot, and determines that a lot-to-lot difference occurs when the calculated deviation exceeds a predetermined threshold value.

再者，判定部184也針對乾燥處理之結果的良品予以判定。具體而言，判定部184係根據溫度分布資訊194，判定在乾燥處理中有無晶圓W之結露。針對此點於後述。In addition, the determination part 184 also determines the good product as a result of the drying process. Specifically, the determination unit 184 determines whether there is condensation on the wafer W during the drying process based on the temperature distribution information 194 . This point will be described later.

異常對應處理部185係在藉由判定部184判定液處理之異常之情況，實行特定的異常對應處理。The abnormality corresponding processing unit 185 executes a specific abnormality corresponding processing when the determination unit 184 determines that the liquid processing is abnormal.

例如，即使異常對應處理部185進行變更液處理之處理條件的處理，作為異常對應處理亦可。For example, even if the abnormality corresponding processing unit 185 performs the processing of changing the processing conditions of the liquid processing, it may be used as the abnormality corresponding processing.

在此，在記憶部19中記憶表示能夠變更之處理條件的指定資訊195。指定資訊195係藉由例如基板處理系統1之使用者而能適當變更。異常對應處理部185即使係以下一次以後的液處理之結果成為正常範圍內之方式，變更藉由指定資訊195而被指定的處理條件亦可。Here, designation information 195 indicating the processing conditions that can be changed is stored in the storage unit 19 . The designation information 195 can be appropriately changed by, for example, a user of the substrate processing system 1 . The abnormality correspondence processing unit 185 may change the processing conditions designated by the designation information 195 even if the result of the next and subsequent liquid processing is within the normal range.

例如，設為判定成在某處理單元16產生處理單元16間差。在此情況，即使異常對應處理部185個別地變更在產生處理單元16間差的處理單元16中之蝕刻液的吐出溫度亦可。此能藉由變更例如規定溫度調整部46a所致的加熱溫度的參數值而被實現。具體而言，異常對應處理部185係以使從其處理單元16之蝕刻平均值及蝕刻均勻性之基準值的偏差控制在正常範圍之方式，個別地調整溫度調整部46a所致的蝕刻液的吐出溫度。另外，異常對應處理部185可以藉由使用例如模型式193進行逆運算，決定規定溫度調整部46a所致之加熱溫度的參數值之變更後的值。For example, it is assumed that it is determined that a difference between processing units 16 occurs in a certain processing unit 16 . In this case, the abnormality corresponding processing unit 185 may individually change the discharge temperature of the etchant in the processing unit 16 in which the difference between the processing units 16 occurs. This can be realized by, for example, changing the parameter value that defines the heating temperature by the temperature adjusting unit 46a. Specifically, the abnormality response processing unit 185 individually adjusts the amount of the etching solution by the temperature adjustment unit 46 a so as to control the deviation from the etching average value of the processing unit 16 and the reference value of the etching uniformity within the normal range. Spit out temperature. In addition, the abnormality correspondence processing unit 185 can determine the changed value of the parameter value that defines the heating temperature by the temperature adjustment unit 46 a by performing inverse operation using, for example, the model expression 193 .

再者，異常對應處理部185即使藉由變更規定藥液供給單元70之加熱器82所致的蝕刻液之加熱溫度的參數值，變更蝕刻液之吐出溫度亦可。例如，設為對某晶圓W判定為蝕刻平均值或蝕刻均勻性之異常。在此情況，異常對應處理部185即使控制藥液供給單元70，變更對下一次之後被液處理的晶圓W的蝕刻液之吐出溫度亦可。Furthermore, the abnormality correspondence processing unit 185 may change the discharge temperature of the etching solution by changing the parameter value that defines the heating temperature of the etching solution by the heater 82 of the chemical solution supply unit 70 . For example, it is assumed that a certain wafer W is determined to be abnormal in the etching average value or the etching uniformity. In this case, the abnormality response processing unit 185 may control the chemical solution supply unit 70 to change the discharge temperature of the etchant for the wafer W to be processed by the solution after the next time.

再者，異常對應處理部185即使藉由以從背面供給部60供給調溫液之方式變更處理條件，使液處理中之晶圓W之面內溫度分布變化亦可。此能藉由變更例如規定溫度調整部61d所致的調溫液之加熱溫度的參數值、規定閥體61c之開關的參數值、規定調溫液供給源61b所致的調溫液之加熱溫度的參數值等來實現。In addition, the abnormality response processing unit 185 may change the in-plane temperature distribution of the wafer W under liquid processing by changing the processing conditions such that the temperature adjustment liquid is supplied from the back surface supply unit 60 . This can be achieved by changing, for example, a parameter value that defines the heating temperature of the temperature-adjusting liquid by the temperature adjusting unit 61d, a parameter value that defines the opening and closing of the valve body 61c, and a parameter that defines the heating temperature of the temperature-adjusting liquid by the temperature-adjusting liquid supply source 61b. parameter values, etc.

再者，異常對應處理部185即使藉由變更腔室20內之溫度，使在液處理中之晶圓W之面內溫度分布變化亦可。此能藉由變更例如規定溫度調整部21d所致的加熱溫度的參數值而被實現。Furthermore, the abnormality response processing unit 185 may change the in-plane temperature distribution of the wafer W under liquid processing by changing the temperature in the chamber 20 . This can be realized by changing, for example, a parameter value that defines the heating temperature by the temperature adjustment unit 21d.

其他，即使異常對應處理部185在例如蝕刻平均值被判定異常之情況，以蝕刻平均值成為正常範圍之方式，變更規定蝕刻液之吐出時間的參數值亦可。In addition, even if the abnormality correspondence processing unit 185 is determined to be abnormal, for example, the etching average value may be changed to the parameter value that defines the discharge time of the etchant so that the etching average value is within the normal range.

再者，即使異常對應處理部185在上述判定部184所致的判定處理中，被判定為在乾燥處理中有產生結露之虞的情況，藉由控制溫度調整部21d而使腔室20內之溫度變化，使露點溫度變化亦可。再者，即使異常對應處理部185藉由控制濕度調整部21e而使腔室20內之濕度變化，使露點溫度變化亦可。再者，即使異常對應處理部185控制溫度調整部46c、置換液供給單元90及背面供給部60之至少一個，而使置換處理中之晶圓W之溫度變化亦可。Furthermore, even if the abnormality correspondence processing unit 185 determines in the determination processing by the determination unit 184 that there is a possibility of dew condensation during the drying process, the temperature adjustment unit 21 d is controlled to make the temperature inside the chamber 20 . Changes in temperature can also change the dew point temperature. In addition, even if the abnormality correspondence processing part 185 changes the humidity in the chamber 20 by controlling the humidity adjustment part 21e, it is sufficient to change the dew point temperature. Furthermore, the abnormality response processing unit 185 may control at least one of the temperature adjustment unit 46c, the replacement liquid supply unit 90, and the back surface supply unit 60 to change the temperature of the wafer W in the replacement process.

再者，即使異常對應處理部185，將表示異常內容的資訊與晶圓ID等建立關聯性的異常資訊，輸出至經由網路等之網絡而被連接於控制裝置4的外部裝置5的處理作為異常對應處理來實行亦可。Furthermore, even if the abnormality correspondence processing unit 185 outputs the abnormality information indicating the content of the abnormality and the abnormality information associated with the wafer ID and the like to the external device 5 connected to the control device 4 via a network such as a network, the processing is as follows. It is also possible to execute the exception corresponding to the processing.

＜針對監視處理之順序＞ 接著，針對藉由控制部18而被實行的監視處理之順序參照圖13予以說明。圖13為表示實施型態所涉及的監視處理之順序的流程圖。 <Sequence for monitoring processing> Next, the procedure of the monitoring process executed by the control unit 18 will be described with reference to FIG. 13 . FIG. 13 is a flowchart showing the procedure of monitoring processing according to the embodiment.

如圖13所示般，控制部18之收集部182係收集規定液處理之處理條件的複數參數值，和包含第1溫度感測器110及第2溫度感測器120的各種感測器之感測值(步驟S101)。接著，控制部18之監視部183係使用收集資訊192和模型式193而生成溫度分布資訊194(步驟S102)。As shown in FIG. 13 , the collecting unit 182 of the control unit 18 collects the complex parameter values specifying the processing conditions of the liquid processing, and the values of the various sensors including the first temperature sensor 110 and the second temperature sensor 120 . sensed value (step S101). Next, the monitoring unit 183 of the control unit 18 uses the collected information 192 and the model expression 193 to generate the temperature distribution information 194 (step S102).

接著，控制部18之判定部184係根據所生成的溫度分部資訊194，判定液處理之結果是否為正常(步驟S103)。另外，針對具體的判定例，於後述。Next, the determination unit 184 of the control unit 18 determines whether or not the result of the liquid processing is normal based on the generated temperature division information 194 (step S103). In addition, a specific determination example will be described later.

在步驟S103中，判定為液處理之結果不正常，即是液處理之結果具有異常之情況(步驟S103，No)，控制部18之異常對應處理部185進行異常對應處理(步驟S104)。在結束步驟S104之處理之情況，或是在步驟S103中判定為液處理之結果為正常之情況(步驟S103，Yes)，控制部18結束監視處理。In step S103, it is determined that the result of liquid processing is abnormal, that is, the result of liquid processing is abnormal (step S103, No), and the abnormality corresponding processing unit 185 of the control unit 18 performs abnormality corresponding processing (step S104). When the process of step S104 is terminated, or when it is determined in step S103 that the result of the liquid process is normal (step S103, Yes), the control unit 18 terminates the monitoring process.

＜判定處理之第1例:溫度分布資訊和臨界值的比較＞ 圖14為表示圖13所示的步驟S103之判定處理之第1例的流程圖。 <Example 1 of Judgment Processing: Comparison of Temperature Distribution Information and Critical Values> FIG. 14 is a flowchart showing a first example of the determination process of step S103 shown in FIG. 13 .

如圖14所示般，控制部18之判定部184係藉由比較溫度分布資訊194和事先被設定的臨界值，判定是否存在低於臨界值的溫度區域(步驟S201)。而且，若不存在低於臨界值之溫度區域時(步驟S201，No)，判定部184係判定為液處理(例如，蝕刻處理)之處理結果為正常(步驟S202)。另一方面，若存在低於臨界值之溫度區域時(步驟S201，Yes)，判定部184係判定為液處理之處理結果為異常(步驟S203)。As shown in FIG. 14 , the determination unit 184 of the control unit 18 compares the temperature distribution information 194 with a predetermined threshold value to determine whether there is a temperature region lower than the threshold value (step S201 ). Then, if there is no temperature region lower than the threshold value (step S201, No), the determination unit 184 determines that the processing result of the liquid processing (eg, etching processing) is normal (step S202). On the other hand, if there is a temperature region lower than the threshold value (step S201, Yes), the determination unit 184 determines that the processing result of the liquid processing is abnormal (step S203).

例如，在事先設定的臨界值為50℃之情況，在晶圓W之面內，根據溫度分布資訊194判定在晶圓W之面內是否存在低於50℃之區域來判定。而且，在存在低於50℃之情況，判定部184判定為液處理(例如，蝕刻處理)之處理結果為異常。For example, when the preset threshold value is 50° C., in the surface of the wafer W, it is determined whether there is a region lower than 50° C. in the surface of the wafer W according to the temperature distribution information 194 . In addition, when the temperature is lower than 50°C, the determination unit 184 determines that the processing result of the liquid processing (eg, etching processing) is abnormal.

另外，在此，雖然表示使用下限之臨界值進行判定處理之情況的例，但是判定部184即使使用上限之臨界值而進行判定處理亦可。再者，判定部184即使使用具有上限及下限的臨界值範圍而進行判定處理亦可。In addition, although the case where the judgment process is performed using the threshold value of a lower limit is shown here, the judgment part 184 may perform a judgment process using the threshold value of an upper limit. In addition, the determination part 184 may perform determination processing using the threshold value range which has an upper limit and a lower limit.

＜判定處理之第2例:蝕刻率分布資訊和臨界值的比較＞ 圖15為表示圖13所示的步驟S103之判定處理之第2例的流程圖。 <Example 2 of judgment processing: Comparison of etching rate distribution information and threshold value> FIG. 15 is a flowchart showing a second example of the determination process of step S103 shown in FIG. 13 .

如圖15所示般，判定部184係將溫度分布資訊194轉換為蝕刻率分布資訊(步驟S301)，根據蝕刻率分部資訊，算出蝕刻率平均值及蝕刻率均勻性(步驟S302)。As shown in FIG. 15 , the determination unit 184 converts the temperature distribution information 194 into etching rate distribution information (step S301 ), and calculates the etching rate average and etching rate uniformity according to the etching rate division information (step S302 ).

接著，判定部184係判定蝕刻平均值是否超過臨界值(步驟S303)，在不超過臨界值之情況(步驟S303，No)，判定為蝕刻處理之結果為異常(步驟S306)。Next, the determination part 184 determines whether the etching average value exceeds the threshold value (step S303), and when it does not exceed the threshold value (step S303, No), determines that the result of the etching process is abnormal (step S306).

另一方面，在步驟S303中，在蝕刻平均值超過臨界值之情況(步驟S303，Yes)，判定部184係判定蝕刻均勻性是否低於臨界值(步驟S304)。在該處理中，在蝕刻均勻性不低於臨界值之情況(步驟S304，No)，判定部184係判定為蝕刻處理之結果為異常(步驟S306)。另一方面，在蝕刻均勻性低於臨界值之情況(步驟S303，Yes)，判定部184係判定為蝕刻處理之結果為正常(步驟S305)。On the other hand, in step S303, when the etching average value exceeds the threshold value (step S303, Yes), the determination unit 184 determines whether the etching uniformity is lower than the threshold value (step S304). In this process, when the etching uniformity is not lower than the threshold value (step S304, No), the determination unit 184 determines that the result of the etching process is abnormal (step S306). On the other hand, when the etching uniformity is lower than the threshold value (step S303, Yes), the determination unit 184 determines that the result of the etching process is normal (step S305).

＜判定處理之第3例:針對乾燥處理之好壞＞ 圖16為表示圖13所示的步驟S103之判定處理之第3例的流程圖。 <Example 3 of Judgment Processing: Regarding the Quality of Drying Processing> FIG. 16 is a flowchart showing a third example of the determination process of step S103 shown in FIG. 13 .

如圖16所示般，判定部184係首先算出露點溫度(步驟S401)。例如，判定部184係使用收集資訊192所含的空間溫度及空間濕度而算出在液處理時之腔室20內的露點溫度。As shown in FIG. 16 , the determination unit 184 first calculates the dew point temperature (step S401 ). For example, the determination unit 184 uses the space temperature and space humidity included in the collected information 192 to calculate the dew point temperature in the chamber 20 during liquid processing.

接著，判定部184係藉由比較溫度分布資訊194和露點溫度，判定低於露點溫度的溫度區域是否存在(步驟S402)。而且，若不存在低於露點之溫度區域時(步驟S401，No)，判定部184係判定為乾燥處理之結果為正常，即是無在乾燥處理中之晶圓W產生結露之虞(步驟S403)。另一方面，若存在低於露點溫度之溫度區域時(步驟S402，Yes)，判定部184係判定為乾燥處理之結果為異常，即是有在乾燥處理中之晶圓W產生結露之虞(步驟S404)。Next, the determination unit 184 determines whether or not a temperature region lower than the dew point temperature exists by comparing the temperature distribution information 194 with the dew point temperature (step S402). Furthermore, if there is no temperature region lower than the dew point (step S401, No), the determination unit 184 determines that the result of the drying process is normal, that is, there is no possibility of dew condensation on the wafer W during the drying process (step S403). ). On the other hand, if there is a temperature region lower than the dew point temperature (step S402, Yes), the determination unit 184 determines that the result of the drying process is abnormal, that is, there is a possibility that dew condensation may occur on the wafer W during the drying process ( Step S404).

另外，判定部184不一定要進行步驟S401之處理。例如，即使判定部184使用事先設定的露點溫度而進行步驟S402之判定亦可。再者，露點溫度之算出使用的溫度及濕度不一定要為腔室20內之溫度及濕度，例如即使為設置基板處理系統1之工場內的溫度及濕度亦可。In addition, the determination part 184 does not necessarily need to perform the process of step S401. For example, the determination part 184 may perform the determination of step S402 using the dew point temperature set in advance. Furthermore, the temperature and humidity used in the calculation of the dew point temperature do not necessarily need to be the temperature and humidity in the chamber 20 , but may be, for example, the temperature and humidity in the workshop where the substrate processing system 1 is installed.

如上述般，實施型態所涉及之基板處理方法包含進行液處理的工程、進行檢測的工程，和進行生成的工程，和進行判定的工程。進行液處理的工程係使用具備將基板(以晶圓W為一例)保持水平的基板保持機構(以基板保持機構30為一例)及朝被保持於基板保持機構的基板吐出處理液(以蝕刻液、沖洗液、置換液為一例)的處理液供給部(以處理液供給部40為一例)的處理單元(以處理單元16為一例)對基板進行液處理。進行檢測的工程係使用被設置在處理單元的複數感測器(以第1溫度感測器110及第2溫度感測器120等為一例)，分別檢測在液處理中之基板之中心部的溫度及基板之端部的溫度。進行生成的工程係根據規定液處理之處理條件的1個或複數參數值，和進行檢測的工程而被檢測的基板之中心部的溫度及基板之端部的溫度，生成表示在液處理中之基板之面內溫度分部的溫度分布資訊(以溫度分布資訊194為一例)。進行判定的工程係根據溫度分布資訊，判定液處理之結果的好壞。As described above, the substrate processing method according to the embodiment includes the process of liquid processing, the process of detection, the process of generation, and the process of determination. The process for performing the liquid processing uses a substrate holding mechanism (for example, the substrate holding mechanism 30 ) that holds the substrate (for example, the wafer W) horizontally, and discharges a processing liquid (for example, an etching liquid) toward the substrate held by the substrate holding mechanism. The processing unit (taking the processing unit 16 as an example) of the processing liquid supply part (taking the processing liquid supplying part 40 as an example) as an example) performs liquid processing on the substrate. The detection process uses a plurality of sensors (for example, the first temperature sensor 110 and the second temperature sensor 120, etc.) provided in the processing unit to detect the temperature of the center of the substrate under liquid processing. temperature and the temperature of the end of the substrate. The generation process is based on one or a plurality of parameter values that specify the processing conditions of the liquid process, and the temperature of the center of the substrate and the temperature of the end of the substrate detected in the process of detection are generated. The temperature distribution information of the in-plane temperature segment of the substrate (take the temperature distribution information 194 as an example). The judgment process is based on the temperature distribution information to judge the quality of the liquid treatment results.

因此，若藉由實施型態所涉及之基板處理方法時，可以對每製品基板適當地掌握相對於製品基板的液處理之結果的好壞。Therefore, by implementing the substrate processing method according to the embodiment, it is possible to appropriately grasp the quality of the result of the liquid processing with respect to the product substrate for each product substrate.

處理液供給部具備吐出處理液之噴嘴(以噴嘴41為一例)，和被連接於噴嘴而對噴嘴供給處理液的供給管線(以供給管線44a～44c為一例)。再者，進行液處理的工程係從噴嘴朝向基板之中心部吐出處理液。再者，進行檢測的工程係檢測藉由被設置在噴嘴或供給管線的溫度感測器(以第1溫度感測器110為一例)被檢測的溫度，作為基板之中心部的溫度。依此，可以容易掌握基板之中心部的溫度。The processing liquid supply unit includes a nozzle (for example, nozzle 41 ) that discharges the processing liquid, and a supply line (for example, supply lines 44 a to 44 c ) that is connected to the nozzle and supplies the processing liquid to the nozzle. In addition, in the process of liquid processing, the processing liquid is discharged from the nozzle toward the center of the substrate. In addition, the process of detection detects the temperature detected by the temperature sensor (for example, the 1st temperature sensor 110) provided in the nozzle or the supply line, as the temperature of the center part of a board|substrate. Accordingly, the temperature of the central portion of the substrate can be easily grasped.

基板保持機構具備把持基板之端部的複數把持部(以把持部31a為一例)。再者，進行檢測的工程係檢測藉由被設置在複數把持部之至少一個的溫度感測器(以第2溫度感測器120為一例)被檢測的溫度，作為基板之端部的溫度。依此，可以容易掌握基板之端部的溫度。The board|substrate holding|maintenance mechanism is provided with the some grip part (Grip part 31a is an example) which grips the edge part of a board|substrate. In addition, the process of detecting detects the temperature detected by the temperature sensor (taking the second temperature sensor 120 as an example) provided in at least one of the plurality of gripping portions as the temperature of the end portion of the substrate. Accordingly, the temperature of the end portion of the substrate can be easily grasped.

複數參數值包含處理單元內之空間溫度及空間濕度、處理液之吐出流量及基板之旋轉數之至少一個。依此，可以提升溫度分布資訊的精度。The complex parameter value includes at least one of the space temperature and space humidity in the processing unit, the discharge flow rate of the processing liquid, and the rotation number of the substrate. Accordingly, the accuracy of the temperature distribution information can be improved.

進行判定的工程係根據藉由進行生成的工程而被生成的複數溫度分布資訊，對每基板，判定在與其他複數基板之間有無液處理之結果的偏差(以晶圓W間差為一例)。依此，可以容易監視有無晶圓間差。The process to be judged is based on the plural temperature distribution information generated by the generated process, and for each substrate, it is determined whether there is a deviation in the result of liquid processing with other plural substrates (for example, the difference between wafers W) . In this way, the presence or absence of a wafer-to-wafer difference can be easily monitored.

進行液處理的工程係使用複數處理單元進行相對於複數基板的液處理。再者，進行判定的工程係根據藉由進行生成的工程而被生成的複數溫度分布資訊，對每處理單元，判定在與其他複數處理單元之間有無液處理之結果的偏差(以處理單元16間差為一例)。依此，可以容易監視有無處理單元間差。The engineering system that performs liquid processing uses a plurality of processing units to perform liquid processing with respect to a plurality of substrates. Furthermore, the process for determination is based on the complex temperature distribution information generated by the process to be generated, and for each processing unit, it is determined whether there is a deviation in the result of liquid treatment with other complex processing units (with the processing unit 16 ). difference is an example). In this way, it is possible to easily monitor the presence or absence of a difference between processing units.

進行判定的工程係根據藉由進行生成的工程而被生成的複數溫度分布資訊，對作為基板之製造單位的每批量，判定在與其他複數批量之間有無液處理之結果的偏差(以批量間差為一例)。依此，可以容易監視有無批量間差。The process to be judged is based on the plural temperature distribution information generated by the process to be generated, for each lot that is the manufacturing unit of the substrate, it is judged whether there is a deviation in the result of the liquid treatment with other plural lots (in terms of lot-to-lot variation). difference is an example). In this way, the presence or absence of a lot difference can be easily monitored.

實施型態所涉及之基板處理方法包含取得處理單元內之露點溫度的工程。再者，進行判定的工程係根據溫度分布資訊及露點溫度，判定在液處理(以乾燥處理為一例)中有無基板的結露。依此，可以容易特定例如有產生水印之虞的基板。The substrate processing method according to the embodiment includes the process of obtaining the dew point temperature in the processing unit. In addition, the process for determining is to determine whether or not there is dew condensation on the substrate during liquid processing (for example, drying processing) based on the temperature distribution information and the dew point temperature. In this way, it is possible to easily specify, for example, a substrate that may cause a watermark.

實施型態所涉及之基板處理方法包含根據溫度分布資訊，控制被設置在供給管線之溫度調整部(以溫度調整部46a、46c為一例)，而補正從處理液供給部被吐出的處理液之溫度的工程。依此，可以減少被判定為液處理之結果為異常的基板之數量。The substrate processing method according to the embodiment includes controlling a temperature adjustment part (with the temperature adjustment parts 46a and 46c as an example) provided in the supply line based on the temperature distribution information, and correcting the difference of the processing liquid discharged from the processing liquid supply part. temperature engineering. Accordingly, the number of substrates determined to be abnormal as a result of the liquid processing can be reduced.

實施型態所涉及之基板處理方法包含根據溫度分布資訊，補正複數參數值之中的至少一個的工程。依此，可以減少被判定為液處理之結果為異常的基板之數量。The substrate processing method according to the embodiment includes a process of correcting at least one of the complex parameter values according to the temperature distribution information. Accordingly, the number of substrates determined to be abnormal as a result of the liquid processing can be reduced.

另外，應該認為此次揭示的實施型態在任何方面都是例示並非用以限制者。實際上，上述實施型態能以各種型態呈現。再者，上述實施型態在不脫離申請專利範圍和其主旨的情況下，即使以各種型態進行省略、替換和變更亦可。In addition, it should be thought that the embodiment disclosed this time is an illustration and not restrictive in every respect. In fact, the above-mentioned implementation forms can be presented in various forms. In addition, the above-mentioned embodiment may be omitted, replaced, and changed in various forms without departing from the scope of the patent application and the gist thereof.

1:基板處理系統 4:控制裝置 16:處理單元 18:控制部 19:記憶部 20:腔室 21d:溫度調整部 21e:濕度調整部 30:基板保持機構 40:處理液供給部 46a:溫度調整部 46c:溫度調整部 50:回收杯 60:背面供給部 70:藥液供給單元 80:沖洗液供給源 90:置換液供給單元 110:第1溫度感測器 120:第2溫度感測器 181:動作控制部 182:收集部 183:監視部 184:判定部 185:異常對應處理部 191:配方資訊 192:收集資訊 193:模型式 194:溫度分布資訊 195:指定資訊 W:製品晶圓 1: Substrate processing system 4: Control device 16: Processing unit 18: Control Department 19: Memory Department 20: Chamber 21d: Temperature adjustment section 21e: Humidity adjustment section 30: Substrate holding mechanism 40: Treatment liquid supply part 46a: Temperature adjustment section 46c: Temperature adjustment part 50: Recycle Cup 60: Back supply part 70: Chemical liquid supply unit 80: Rinse fluid supply source 90: Substitution fluid supply unit 110: 1st temperature sensor 120: 2nd temperature sensor 181: Action Control Department 182: Collection Department 183: Surveillance Department 184: Judgment Department 185: Abnormal Correspondence Processing Department 191: Recipe Information 192: Gather Information 193: Models 194: Temperature distribution information 195: Designated Information W: product wafer

[圖1]係表示實施型態所涉及之基板處理系統之概略構成的圖。 [圖2]為表示實施型態所涉及的處理單元之構成的圖。 [圖3]為表示實施型態所涉及的溫度感測器之配置例的圖。 [圖4]為表示實施型態所涉及的置換液供給單元之構成的圖。 [圖5]為表示實施型態所涉及的控制裝置之構成的方塊圖。 [圖6]為表示實施型態所涉及的處理單元實行的液處理之順序的流程圖。 [圖7]為表示實施型態所涉及的收集資訊之例的圖。 [圖8]為表示實施型態所涉及的溫度分布資訊之例的圖。 [圖9]為表示蝕刻率換算處理之例的圖。 [圖10]為表示判定有無晶圓間差之例的圖。 [圖11]為表示判定有無處理單元間差之例的圖。 [圖12]為表示判定有無批量間差之例的圖。 [圖13]為表示實施型態所涉及的監視處理之順序的流程圖。 [圖14]為表示圖13所示之步驟S103之判定處理之第1例的流程圖。 [圖15]為表示圖13所示之步驟S103之判定處理之第2例的流程圖。 [圖16]為表示圖13所示之步驟S103之判定處理之第3例的流程圖。 1 is a diagram showing a schematic configuration of a substrate processing system according to an embodiment. FIG. 2 is a diagram showing a configuration of a processing unit according to an embodiment. [ Fig. 3] Fig. 3 is a diagram showing an arrangement example of a temperature sensor according to an embodiment. [ Fig. 4] Fig. 4 is a diagram showing a configuration of a replacement fluid supply unit according to an embodiment. [ Fig. 5] Fig. 5 is a block diagram showing the configuration of the control device according to the embodiment. 6 is a flowchart showing the procedure of liquid processing performed by the processing unit according to the embodiment. [ Fig. 7] Fig. 7 is a diagram showing an example of collected information according to an embodiment. [ Fig. 8] Fig. 8 is a diagram showing an example of temperature distribution information according to an embodiment. [ Fig. 9] Fig. 9 is a diagram showing an example of etching rate conversion processing. 10 is a diagram showing an example of determining the presence or absence of a difference between wafers. 11 is a diagram showing an example of determining the presence or absence of a difference between processing units. FIG. 12 is a diagram showing an example of determining the presence or absence of a difference between batches. 13 is a flowchart showing the procedure of monitoring processing according to the embodiment. 14 is a flowchart showing a first example of the determination process of step S103 shown in FIG. 13 . [ Fig. 15] Fig. 15 is a flowchart showing a second example of the determination process of step S103 shown in Fig. 13 . Fig. 16 is a flowchart showing a third example of the determination process of step S103 shown in Fig. 13 .

Claims (11)

一種基板處理方法，包含： 使用具備將基板保持水平的基板保持機構及朝向被保持於上述基板保持機構的上述基板吐出處理液的處理液供給部的處理單元，對上述基板進行液處理的工程； 使用被設置在上述處理單元的複數感測器，分別檢測在上述液處理中之上述基板之中心部的溫度及上述基板之端部的溫度的工程； 根據規定上述液處理之處理條件的1個或複數參數值，和上述檢測的工程而被檢測到的上述基板之中心部之溫度及上述基板之端部的溫度，生成表示在上述液處理中之上述基板的面內溫度分布的溫度分布資訊的工程；及 根據上述溫度分布資訊，判定上述液處理之結果的好壞的工程。 A substrate processing method, comprising: A process of performing liquid processing on the substrate using a processing unit including a substrate holding mechanism for holding the substrate horizontally and a processing liquid supply portion for discharging the processing liquid toward the substrate held by the substrate holding mechanism; A process of detecting the temperature of the center portion of the substrate and the temperature of the end portion of the substrate during the liquid processing using a plurality of sensors provided in the processing unit, respectively; Based on one or a plurality of parameter values that define the processing conditions of the liquid processing, and the temperature of the center portion of the substrate and the temperature of the edge portion of the substrate detected in the above-mentioned detection process, the value shown in the liquid processing is generated. Engineering of temperature distribution information of the in-plane temperature distribution of the above-mentioned substrate; and The process of judging the quality of the result of the liquid treatment based on the temperature distribution information. 如請求項1之基板處理方法，其中 上述處理液供給部具備吐出上述處理液的噴嘴，和被連接於上述噴嘴而對上述噴嘴供給上述處理液的供給管線， 進行上述液處理的工程係從上述噴嘴朝向上述基板之中心部吐出上述處理液， 上述檢測的工程係檢測藉由被設置在上述噴嘴或上述供給管線的溫度感測器而被檢測的溫度，作為上述基板之中心部的溫度。 The substrate processing method of claim 1, wherein The processing liquid supply unit includes a nozzle that discharges the processing liquid, and a supply line that is connected to the nozzle and supplies the processing liquid to the nozzle, In the process of performing the liquid treatment, the treatment liquid is discharged from the nozzle toward the center of the substrate, The said detection process detects the temperature detected by the temperature sensor provided in the said nozzle or the said supply line, as the temperature of the center part of the said board|substrate. 如請求項1或2之基板處理方法，其中 上述基板保持機構具備把持上述基板之端部的複數把持部， 上述檢測的工程係檢測藉由被設置在上述複數把持部之至少一個的溫度感測器而被檢測的溫度，作為上述基板之端部的溫度。 The substrate processing method of claim 1 or 2, wherein The said board|substrate holding|maintenance mechanism is provided with the some grip part which grips the edge part of the said board|substrate, The process of the said detection detects the temperature detected by the temperature sensor provided in at least one of the said plurality of holding parts, as the temperature of the edge part of the said board|substrate. 如請求項1或2之基板處理方法，其中 上述複數參數值包含上述處理單元內之空間溫度以及空間濕度、上述處理液之吐出流量及上述基板之旋轉數之至少一個。 The substrate processing method of claim 1 or 2, wherein The complex parameter value includes at least one of the space temperature and space humidity in the processing unit, the discharge flow rate of the processing liquid, and the rotation number of the substrate. 如請求項1或2之基板處理方法，其中 上述判定的工程係根據藉由上述生成的工程而被生成的複數上述溫度分布資訊，對每上述基板，判定在與其他複數上述基板之間有無上述液處理之結果的偏差。 The substrate processing method of claim 1 or 2, wherein The process of the determination is based on the plurality of pieces of the temperature distribution information generated by the above-mentioned generation process, for each of the above-mentioned substrates, it is determined whether or not there is a deviation in the result of the liquid treatment with the other plurality of the above-mentioned substrates. 如請求項1或2之基板處理方法，其中 上述進行液處理的工程係使用複數上述處理單元進行相對於複數上述基板的上述液處理， 上述判定的工程係根據藉由上述生成的工程被生成的複數上述溫度分布資訊，對每上述處理單元，判定在與其他複數上述處理單元之間有無上述液處理之結果的偏差。 The substrate processing method of claim 1 or 2, wherein The above-mentioned process for performing the liquid treatment is to use a plurality of the above-mentioned processing units to perform the above-mentioned liquid treatment with respect to a plurality of the above-mentioned substrates, The determined process is based on the plurality of temperature distribution information generated by the generated process, for each of the processing units, it is determined whether or not there is a deviation in the result of the liquid treatment with the other plurality of the processing units. 如請求項1或2之基板處理方法，其中 上述判定的工程係根據藉由上述生成的工程被生成的複數上述溫度分布資訊，對作為上述基板的製造單位的每批量，判定在與其他複數批量之間有無上述液處理之結果的偏差。 The substrate processing method of claim 1 or 2, wherein The process for the determination is based on the plurality of pieces of the temperature distribution information generated by the generated process, for each lot that is a manufacturing unit of the substrate, it is judged whether or not there is a deviation in the result of the liquid treatment with other plural lots. 如請求項1或2之基板處理方法，其中 包含取得上述處理單元內之露點溫度的工程， 上述判定的工程係根據上述溫度分布資訊及上述露點溫度，判定在上述液處理中有無上述基板之結露。 The substrate processing method of claim 1 or 2, wherein Including the process of obtaining the dew point temperature in the above-mentioned processing unit, In the process of the above determination, it is determined whether or not there is dew condensation on the substrate during the liquid treatment based on the temperature distribution information and the dew point temperature. 如請求項2之基板處理方法，其中 根據上述溫度分布資訊，控制被設置在上述供給管線之溫度調整部，而補正從上述處理液供給部被吐出的上述處理液之溫度的工程。 The substrate processing method of claim 2, wherein The process of correcting the temperature of the treatment liquid discharged from the treatment liquid supply section is controlled by controlling the temperature adjustment section provided in the supply line based on the temperature distribution information. 如請求項1、2或9中之任一項之基板處理方法，其中 包含根據上述溫度分布資訊，補正上述複數參數值之中之至少一個的工程。 The substrate processing method of any one of claims 1, 2 or 9, wherein Including the process of correcting at least one of the above-mentioned complex parameter values according to the above-mentioned temperature distribution information. 一種基板處理裝置，具備： 基板保持機構，其係將基板保持水平； 處理液供給部，其係朝向被保持於上述基板保持機構的上述基板吐出處理液； 第1溫度感測器，其係檢測被保持於上述基板保持機構的上述基板之中心部的溫度； 第2溫度感測器，其係檢測被保持於上述基板保持機構的上述基板之端部的溫度；及 控制部， 上述控制部係使各部實行基板處理方法，該基板處理方法包含： 在使用上述基板保持機構將上述基板保持水平的狀態，藉由從上述處理液供給部朝向上述基板吐出上述處理液，對上述基板進行液處理的工程； 使用上述第1溫度感測器及上述第2溫度感測器，分別檢測在上述液處理中之上述基板之中心部的溫度及上述基板之端部的溫度的工程； 根據規定上述液處理之處理條件的1個或複數的參數值，和藉由進行上述檢測的工程而被檢測到的上述基板之中心部的溫度及上述基板之端部的溫度，生成表示在上述液處理中之上述基板之面內溫度分布的溫度分布資訊的工程；及 根據上述溫度分布資訊，判定上述液處理之結果的好壞的工程。 A substrate processing apparatus, comprising: a substrate holding mechanism, which keeps the substrate horizontal; a processing liquid supply unit for discharging a processing liquid toward the substrate held by the substrate holding mechanism; a first temperature sensor for detecting the temperature of the central portion of the substrate held by the substrate holding mechanism; a second temperature sensor that detects the temperature of the end portion of the substrate held by the substrate holding mechanism; and control department, The above-mentioned control unit causes each unit to execute a substrate processing method, and the substrate processing method includes: A process of performing liquid processing on the substrate by discharging the processing liquid from the processing liquid supply unit toward the substrate in a state where the substrate is held horizontally by the substrate holding mechanism; A process of detecting the temperature of the center portion of the substrate and the temperature of the end portion of the substrate during the liquid process using the first temperature sensor and the second temperature sensor, respectively; Based on one or a plurality of parameter values that define the processing conditions of the liquid processing, and the temperature of the center portion of the substrate and the temperature of the edge portion of the substrate detected by the process of performing the detection, the generation shown in the above is generated. Engineering of temperature distribution information of in-plane temperature distribution of the above-mentioned substrate in liquid processing; and The process of judging the quality of the result of the liquid treatment based on the temperature distribution information.
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