JP6402087B2 - Liquid processing equipment - Google Patents

Description

  The disclosed embodiment relates to a liquid processing apparatus.

  Conventionally, a single wafer type liquid processing apparatus is known as a liquid processing apparatus that performs liquid processing on a substrate such as a semiconductor wafer or a glass substrate. The single-wafer type liquid processing apparatus includes, for example, a substrate holding unit that rotates while holding the outer peripheral portion of the substrate, and a supply unit that supplies the processing liquid to the substrate held by the substrate holding unit.

  In such a liquid processing apparatus, it is desired to reduce the wraparound of the processing liquid supplied to the upper surface of the wafer.

  Here, Patent Document 1 describes a liquid processing apparatus including a support member that has an inclined surface that is inclined toward the center of the wafer and extends along the circumferential direction of the wafer. The wafer is supported by the inclined surface of the support member, and the peripheral portion of the wafer and the inclined surface of the support member are in contact with each other along the circumferential direction of the wafer, so that the treatment liquid is prevented from entering the lower surface of the wafer.

JP2013-58607A

  However, in the above-described conventional technology, the processing liquid tends to remain between the inclined surface of the support member and the wafer, which may cause the processing liquid to wrap around the lower surface of the wafer.

  An object of one embodiment of the present invention is to provide a liquid processing apparatus that can prevent the processing liquid from flowing into the lower surface of the substrate.

  A liquid processing apparatus according to an aspect of an embodiment includes a rotating plate, a support member, and a supply unit. The rotating plate is rotatable. The support member is provided on the rotating plate and supports the peripheral edge of the lower surface of the substrate. The supply unit supplies the processing liquid to the upper surface of the substrate supported by the support member. The support member includes a contact portion and an outer peripheral portion. The contact portion extends along the circumferential direction of the substrate and comes into contact with the peripheral portion of the lower surface of the substrate. The outer peripheral portion is continuously located from the contact portion outside the contact portion in the radial direction of the substrate, and is formed lower than the contact portion.

  According to one aspect of the embodiment, it is possible to suppress the treatment liquid from entering the lower surface of the substrate.

FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to the present embodiment. FIG. 2 is a diagram for explaining the configuration of the processing unit. FIG. 3 is an explanatory diagram of the operation of the gripping mechanism. FIG. 4 is an operation explanatory diagram of the gripping mechanism. FIG. 5 is a diagram for explaining the arrangement of the support members. FIG. 6 is a diagram for explaining the configuration of the support member. FIG. 7 is a diagram for explaining the configuration of the support member. FIG. 8 is a diagram for explaining the configuration of a conventional support member. FIG. 9 is a partial cross-sectional view taken along line AA in FIG. 10 is a partial cross-sectional view taken along line BB in FIG. FIG. 11 is a diagram for explaining the configuration of the support member according to the first modification. FIG. 12 is a diagram for explaining a configuration of a support member according to a second modification. FIG. 13 is a diagram for explaining a configuration of a support member according to a third modification.

  Hereinafter, embodiments of a liquid processing apparatus disclosed in the present application will be described in detail with reference to the accompanying drawings. In addition, this invention is not limited by embodiment shown below.

  FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to the present embodiment. In the following, in order to clarify the positional relationship, the X axis, the Y axis, and the Z axis that are orthogonal to each other are defined, and the positive direction of the Z axis is the vertically upward direction.

  As shown in FIG. 1, the substrate processing system 1 includes a carry-in / out station 2 and a processing station 3. The carry-in / out station 2 and the processing station 3 are provided adjacent to each other.

  The carry-in / out station 2 includes a carrier placement unit 11 and a transport unit 12. A plurality of carriers C that accommodate a plurality of substrates, in this embodiment a semiconductor wafer (hereinafter referred to as a wafer W) in a horizontal state, are placed on the carrier placement unit 11.

  The transport unit 12 is provided adjacent to the carrier placement unit 11 and includes a substrate transport device 13 and a delivery unit 14 inside. The substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and transfers the wafer W between the carrier C and the delivery unit 14 using the wafer holding mechanism. Do.

  The processing station 3 is provided adjacent to the transfer unit 12. The processing station 3 includes a transport unit 15 and a plurality of processing units 16. The plurality of processing units 16 are provided side by side on the transport unit 15.

  The transport unit 15 includes a substrate transport device 17 inside. The substrate transfer device 17 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and transfers the wafer W between the delivery unit 14 and the processing unit 16 using a wafer holding mechanism. I do.

  The processing unit 16 performs predetermined substrate processing on the wafer W transferred by the substrate transfer device 17.

  Further, the substrate processing system 1 includes a control device 4. The control device 4 is a computer, for example, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores a program for controlling various processes executed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the program stored in the storage unit 19.

  Such a program may be recorded on a computer-readable storage medium, and may be installed in the storage unit 19 of the control device 4 from the storage medium. Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

  In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C placed on the carrier placement unit 11 and receives the taken-out wafer W. Place on the transfer section 14. The wafer W placed on the delivery unit 14 is taken out from the delivery unit 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16.

  The wafer W carried into the processing unit 16 is processed by the processing unit 16, then unloaded from the processing unit 16 by the substrate transfer device 17, and placed on the delivery unit 14. Then, the processed wafer W placed on the delivery unit 14 is returned to the carrier C of the carrier placement unit 11 by the substrate transfer device 13.

  Next, the configuration of the processing unit 16 will be described with reference to FIG. FIG. 2 is a diagram for explaining the configuration of the processing unit 16.

  As shown in FIG. 2, the processing unit 16 includes a substantially rectangular casing 21, a substantially cylindrical cup portion 22 that is provided at a substantially central portion in the casing 21 and has an upper surface opened, and an inner side of the cup portion 22. The wafer holding and rotating unit 23 that is disposed on the wafer W and can rotate while holding the wafer W, and the processing liquid is supplied to the wafer W held on the wafer holding and rotating unit 23 and is in contact with the upper surface of the wafer W. And a brush 24 for cleaning the upper surface of W.

  The housing 21 is formed with a transport port 21a for carrying the wafer W into and out of the housing 21 by the substrate transport device 17 (see FIG. 1). The transfer port 21a is provided with a shutter (not shown). The shutter is opened during loading and unloading, and the shutter is closed during processing and the transfer port 21a is closed.

  The cup portion 22 can be moved up and down between an upper position indicated by a broken line in FIG. 2 and a lower position indicated by a solid line in the housing 21 by a lifting mechanism (not shown). When the wafer W is loaded / unloaded, the cup portion 22 is positioned at the lower position so that the loading / unloading of the wafer W is not interfered. When the wafer W is processed, the cup portion 22 is positioned at the upper position, thereby The processing liquid supplied to W is received, and the processing liquid is discharged from a drain (not shown).

  The wafer holding / rotating unit 23 includes a rotating shaft 23S that rotates by being connected to a motor M disposed below the casing 21, and a rotating plate 23P that is attached to the rotating shaft 23S at a substantially central portion of the lower surface. .

  The rotating shaft 23S is formed with a conduit 23C that penetrates the central portion thereof. The conduit 23C is connected to the N 2 gas supply source 26 via a flow rate adjusting mechanism 25 such as a valve. A space is formed between the rotating plate 23P of the wafer holding / rotating unit 23 and the wafer W held by the wafer holding / rotating unit 23, and N2 gas that has passed through the conduit 23C passes through this space from the upper end of the conduit 23C. Flows out toward the outer periphery. When the wafer holding / rotating unit 23 and the wafer W rotate, the space between the rotating plate 23P and the wafer W becomes a negative pressure than the space above the wafer W. If it does so, the center part of the wafer W will bend, the flatness of the upper surface of the wafer W will deteriorate, and there exists a possibility that the uniformity of a liquid process may also deteriorate. However, since the N 2 gas is supplied to the space, it is possible to suppress the deflection of the central portion of the wafer W. Further, since the N 2 gas blows out from the space between the rotating plate 23P and the wafer W, an effect of reducing the adhesion of the processing liquid supplied to the upper surface of the wafer W to the lower surface can be obtained.

  The brush 24 is supported by an arm 24A that can rotate in a horizontal plane and can move up and down. A conduit 24C through which the processing liquid supplied to the wafer W flows is formed in the arm 24A. As the arm 24A rotates and descends, and the brush 24 comes into contact with the upper surface of the wafer W (or slightly before), a processing liquid (for example, deionized water) from a predetermined processing liquid supply source passes through the conduit 24C. It flows and is supplied to the upper surface of the wafer W from an opening 24B provided at the base end of the brush 24. As a result, the brush 24 comes into contact with the upper surface of the wafer W to clean the upper surface of the wafer W, and the particles and residues removed by the brush 24 can be washed away with the processing liquid.

  Although the processing unit 16 includes the brush 24 here, the processing unit 16 may include a nozzle that discharges the processing liquid onto the upper surface of the wafer W.

  The rotating plate 23P is a member having a substantially disk shape. A plurality of gripping mechanisms 23G (only two are shown in FIG. 2) for gripping the wafer W by pressing the periphery of the wafer W are provided on the lower periphery of the rotating plate 23P.

  Each gripping mechanism 23G has a lever member 23L that can be rotated by a rotation shaft 23T, and a gripping portion 23A that can contact the peripheral edge of the wafer W by rotating the lever member 23L in the direction indicated by the arrow d1. doing. A rod member 43 that moves the far end of the lever member 23L up and down is provided below the far end of each lever member 23L. The rod member 43 is attached to the arm 42, and the arm 42 moves up and down by the lifting mechanism 41.

  Here, the operation of the gripping mechanism 23G will be described with reference to FIGS. 3 and 4 are operation explanatory views of the gripping mechanism 23G. 3 shows a state before the wafer W is held by the holding mechanism 23G, and FIG. 4 shows a state after the wafer W is held by the holding mechanism 23G.

  As shown in FIG. 3, before gripping the wafer W, the arm 42 is moved upward by the lifting mechanism 41 (see FIG. 2), and the rod member 43 moves the far end of the lever member 23L of the gripping mechanism 23G. Pushed upwards. For this reason, the gripping portion 23A provided at the other end of the lever member 23L (the end portion supported by the rotating shaft 23T) is inclined outward.

  On the other hand, as shown in FIG. 4, when the arm 42 moves downward, the lever member 23L rotates around the rotation shaft 23T by the biasing member 23B provided on the lower surface of the rotating plate 23P and its own weight. . Accordingly, the gripping portion 23A is pressed against the peripheral edge of the wafer W. The wafer W is gripped by the gripping portions 23A of the three gripping mechanisms 23G pressing the peripheral edge of the wafer W. When the motor M (see FIG. 2) rotates in this state, the rotating plate 23P and the gripping mechanism 23G attached thereto rotate, and the wafer W gripped by the gripping mechanism 23G rotates on the rotating plate 23P. .

  The processing unit 16 configured as described above further includes a support member for suppressing the processing liquid supplied to the upper surface of the wafer W from entering the lower surface. Below, the structure of this support member is demonstrated concretely.

  FIG. 5 is a diagram for explaining the arrangement of the support members. 6 and 7 are diagrams for explaining the configuration of the support member 50. FIG. FIG. 5 schematically shows the rotary plate 23P, the gripping mechanism 23G, and the support member 50 when the processing unit 16 is viewed from above. 6 and 7 are a perspective view and a plan view of the support member 50, respectively.

  As shown in FIG. 5, a plurality of support members 50 extending along the circumferential direction of the wafer W are provided on the outer peripheral portion of the upper surface of the rotating plate 23 </ b> P. In the present embodiment, a total of six support members 50 are provided, one on each side of the three gripping mechanisms 23G. Specifically, a plurality of extending portions 27 extending outward from the wafer W are formed on the outer peripheral portion of the rotating plate 23 </ b> P, and each support member 50 is placed on the extending portion 27. At the same time, it is attached to the extending portion 27 by, for example, screws.

  As shown in FIG. 5, a plurality of (here, three) notches C1 are formed on the outer peripheral edge of the rotating plate 23P. The notch C1 is provided corresponding to a wafer holding claw (not shown) provided in the substrate transfer device 17 (see FIG. 1), and allows the wafer holding claw to pass through the rotary plate 23P up and down. A discharge port 28 for discharging N2 gas is formed at the center of the rotating plate 23P.

  As shown in FIGS. 6 and 7, the support member 50 includes a contact portion 51, an outer peripheral portion 52, an inner peripheral portion 53, and a guide pin 60.

  The contact part 51 is a part that comes into contact with the peripheral edge of the lower surface of the wafer W, and extends along the circumferential direction of the wafer W.

  The wafer W is supported by the support member 50 when the outer peripheral portion of the lower surface is in contact with the contact portion 51 of the support member 50. At this time, the processing liquid supplied to the upper surface of the wafer W goes to the lower surface side of the wafer W because the peripheral portion of the lower surface of the wafer W and the contact portion 51 of the support member 50 are in contact with each other along the circumferential direction of the wafer W. Can be suppressed. The wafer W is held by the holding member 50 and then held by the holding mechanism 23G.

  The outer peripheral portion 52 is a portion that is continuously located from the contact portion 51 on the radially outer side of the wafer W with respect to the contact portion 51, and is formed lower than the contact portion 51. The outer peripheral portion 52 includes a flat portion 54 and a connecting portion 55 that is located between the contact portion 51 and the flat portion 54 and connects them.

  The inner peripheral portion 53 is a portion located on the radially inner side of the wafer W with respect to the contact portion 51 and is formed lower than the contact portion 51. The upper surface of the inner peripheral portion 53 is an inclined surface that is inclined downward toward the center of the wafer W.

  The guide pin 60 is provided on the flat portion 54 in the outer peripheral portion 52. The upper surface of the guide pin 60 is higher than the wafer W supported by the contact portion 51, and an inclined surface 61 that is inclined downward toward the center of the wafer W is formed on the upper surface. When the wafer W is placed on the support member 50 from the substrate transfer device 17 (see FIG. 1), if the peripheral edge of the wafer W contacts the inclined surface 61, the peripheral edge of the wafer W is guided so as to slide down the inclined surface 61. As a result, the wafer W moves. Thereby, the wafer W is positioned and supported by the contact portion 51 of the support member 50.

  FIG. 8 is a diagram for explaining the configuration of a conventional support member. 9 is a partial cross-sectional view taken along the line AA in FIG. 7, and FIG. 10 is a partial cross-sectional view taken along the line BB in FIG.

  As shown in FIG. 8, the conventional support member 50X supports the wafer W on the inclined surface 50Xa. For this reason, the processing liquid L tends to remain between the inclined surface 50Xa of the support member 50X and the wafer W, and the remaining processing liquid L may wrap around the lower surface of the wafer W due to, for example, capillary action (FIG. 8). (See arrow d2).

  On the other hand, as shown in FIG. 9, the support member 50 according to the present embodiment is formed such that the outer peripheral side is lower than the contact portion 51 than the contact portion 51 that contacts the lower surface peripheral portion of the wafer W. In other words, the contact portion 51 is at the highest position in the structure of the support member 50. For this reason, the processing liquid L does not accumulate between the inclined surface 50Xa and the wafer W unlike the conventional support member 50X. Therefore, compared with the conventional support member 50X, the wraparound of the processing liquid L to the lower surface of the wafer W can be suppressed.

  As shown in FIG. 9, the connecting portion 55 in the outer peripheral portion 52 has a curved inclined surface 551 that bulges outward at a portion connecting to the contact portion 51. By adopting such a shape, for example, compared with a case where the connecting portion 55 is horizontally extended at the same height as the contact portion 51, it is difficult to collect the processing liquid between the connecting portion 55 and the wafer W. Can do. Further, it is possible to make it difficult to damage the peripheral edge of the lower surface of the wafer W as compared with the case where the inclined surface 551 of the connecting portion 55 is formed in a planar shape, for example. Note that a vertical surface 552 is formed on the flat portion 54 side of the connecting portion 55.

  Here, the upper surface 541 of the flat portion 54 in the outer peripheral portion 52 is assumed to be a horizontal plane, but the upper surface of the flat portion 54 may be an inclined surface that is inclined downward toward the radially outer side of the wafer W. By making the upper surface of the flat portion 54 an inclined surface, the processing liquid dropped from the upper surface of the wafer W can be efficiently discharged from the support member 50.

  Further, the upper surface 531 of the inner peripheral portion 53 of the support member 50 is an inclined surface. For this reason, for example, the contact width between the support member 50 and the wafer W in the radial direction of the wafer W can be reduced compared to the case where the upper surface 531 of the inner peripheral portion 53 is a horizontal plane. Thereby, even when the lower surface of the wafer W is a device surface, the support member 50 is unlikely to contact the device surface, and thus the device surface is not easily damaged. Further, the N 2 gas supplied from the conduit 23C (see FIG. 2) can be efficiently distributed to the vicinity of the contact portion 51.

  As shown in FIG. 10, the support member 50 has a gap D between the connecting portion 55 and the guide pin 60. For this reason, the processing liquid does not easily accumulate between the guide pins 60 and the connecting portion 55, and the processing liquid is further prevented from entering the peripheral edge of the lower surface of the wafer W.

  A plurality of attachment portions 56 for attaching the support member 50 to the extending portion 27 (see FIG. 5) of the rotating plate 23P are provided below the support member 50. The attachment portion 56 is a substantially cylindrical portion, and is provided, for example, at the center portion and both end portions of the support member 50. The attachment portion 56 is inserted through an attachment hole (not shown) provided in the extending portion 27 of the rotating plate 23P. Further, the attachment portion 56 is formed with a screw hole 561 for screwing the support member 50 to the extension portion 27.

  As described above, the processing unit 16 (corresponding to an example of “liquid processing apparatus”) according to the present embodiment includes the rotating plate 23P, the support member 50, and the brush 24 (corresponding to an example of “supplying unit”). Prepare. The rotating plate 23P is rotatable. The support member 50 is provided on the rotating plate 23P and supports the lower surface peripheral portion of the wafer W. The brush 24 supplies a processing liquid to the upper surface of the wafer W supported by the support member 50. The support member 50 includes a contact portion 51 and an outer peripheral portion 52. The contact portion 51 extends along the circumferential direction of the wafer W and contacts the lower surface peripheral portion of the wafer W. The outer peripheral portion 52 is continuously located from the contact portion on the radially outer side of the wafer W with respect to the contact portion 51, and is formed lower than the contact portion 51.

  Therefore, according to the processing unit 16 according to the present embodiment, it is possible to prevent the processing liquid from entering the lower surface of the wafer W.

  By the way, the upper surface of the support member 50 may be subjected to a hydrophobic treatment or a hydrophilic treatment. A modification in such a case will be described with reference to FIGS. FIG. 11 is a diagram for explaining the configuration of the support member according to the first modification, and FIG. 12 is a diagram for explaining the configuration of the support member according to the second modification.

  As shown in FIG. 11, in the supporting member 50A according to the first modification, the upper surface of the outer peripheral portion 52, that is, the upper surface 541A of the flat portion 54, the inclined surface 551A of the connecting portion 55, and the vertical surface 552A have hydrophilicity. And the upper surface of the contact part 51 and the upper surface 531A of the inner peripheral part 53 have hydrophobicity.

  Thus, by making the upper surface of the contact portion 51 and the upper surface 531A of the inner peripheral portion 53 hydrophobic, the processing liquid hardly remains in the contact portion 51, and the wraparound of the processing liquid to the lower surface of the wafer W is suppressed. The Moreover, since the processing liquid can be efficiently discharged from the support member 50A by making the upper surface of the outer peripheral portion 52 hydrophilic, this also suppresses the processing liquid from entering the lower surface of the wafer W. it can.

  The upper surface of the contact part 51 and the upper surface 531A of the inner peripheral part 53 can be hydrophobized, for example, by coating with a hydrophobic coating agent or applying a hydrophobic tape. Similarly, the upper surface of the outer peripheral part 52 can also be hydrophilized by coating with a hydrophilic coating agent or applying a hydrophilic tape.

  The method of hydrophobizing is not limited to the above, and may be realized by, for example, polishing the upper surface of the contact portion 51 and the upper surface 531A of the inner peripheral portion 53 or performing surface modification by plasma treatment. . Moreover, the method of hydrophilization may also be realized by performing a process of providing fine irregularities on the outer peripheral portion 52 or performing surface modification by plasma treatment.

  As shown in FIG. 12, the support member 50B according to the second modified example has a hydrophilic upper surface 541B of the flat portion 54, an upper surface of the contact portion 51, an inclined surface 551B and a vertical surface 552B of the connecting portion 55, and The upper surface 531B of the inner peripheral part 53 has hydrophobicity.

  As described above, since the connecting portion 55 is also made hydrophobic, the processing liquid does not easily remain in the connecting portion 55, so that it is possible to further prevent the processing liquid from entering the lower surface of the wafer W.

  In the support member 50B, the inclined surface 551B of the connecting portion 55 may be hydrophobic, and the vertical surface 552B may be hydrophilic. As a result, the treatment liquid tends to fall down as the treatment liquid is solidified on the inclined surface 551B, and the treatment liquid that has reached the vertical surface 552B tends to flow downward.

  By the way, if it is desired to prevent the treatment liquid from remaining more than in the above-described embodiment, the support member may be provided with a heating unit inside. A modification in such a case will be described with reference to FIG. FIG. 13 is a diagram for explaining a configuration of a support member according to a third modification.

  As illustrated in FIG. 13, the support member 50 </ b> C includes a heating unit 70 around the contact portion 51 (for example, an end portion on the contact portion 51 side in the inner peripheral portion 53). The heating unit 70 includes a heating wire, for example, and is provided between the support member 50C and a coating layer formed on the upper surface of the support member 50C. The coating layer is, for example, the above-described hydrophobic surface.

  The power supply to the heating unit 70 is performed via the lever member 23L, the rod member 43 (see FIG. 2), and the like. For example, power supply terminals are provided on the lower surface of the lever member 23L and the upper surface of the rod member 43, respectively. As shown in FIG. 4, in the state where the wafer W is held by the holding portion 23 </ b> A, the lever member 23 </ b> L and the rod member 43 are separated from each other. Is not heated.

  On the other hand, as shown in FIG. 3, when the gripping of the wafer W by the gripping portion 23A is released, the terminal provided on the lower surface of the lever member 23L and the terminal provided on the upper surface of the rod member 43 come into contact with each other. Electric power is supplied to the heating unit 70 from a power source (not shown) via the terminal of the rod member 43 and the terminal of the gripping part 23A. Thereby, the periphery of the contact part 51 is heated.

  As described above, according to the support member 50C, after the gripping of the wafer W by the gripping part 23A is released, that is, after the liquid processing is finished, the periphery of the contact part 51 is heated by using the heating part 70, whereby the liquid Even if the processing liquid remains on the peripheral edge of the lower surface of the wafer W after the processing, the processing liquid can be removed by heating. Therefore, it is possible to further suppress the treatment liquid from entering the lower surface of the wafer W.

  In addition, although the example in case the heating part 70 is provided in the periphery of the contact part 51 was shown here, the heating part 70 may be provided in the position away from the contact part 51. FIG.

  Further effects and modifications can be easily derived by those skilled in the art. Thus, the broader aspects of the present invention are not limited to the specific details and representative embodiments shown and described above. Accordingly, various modifications can be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.

W Wafer 16 Processing Unit 23 Wafer Holding Rotating Unit 23A Gripping Unit 23P Rotating Plate 50 Support Member 51 Contacting Unit 52 Outer Peripheral Portion 53 Inner Peripheral Portion 54 Flat Portion 55 Connecting Portion 60 Guide Pin 61 Inclined Surface

Claims (8)

A rotatable rotating plate;
A support member provided on the rotating plate and supporting a lower peripheral edge of the substrate;
A supply unit for supplying a processing liquid to the upper surface of the substrate supported by the support member,
The support member is
A contact portion extending along a circumferential direction of the substrate and in contact with a lower surface peripheral portion of the substrate;
A liquid processing apparatus comprising: an outer peripheral portion that is continuously located from the contact portion on a radially outer side of the substrate than the contact portion and is formed lower than the contact portion. The outer periphery is
A flat portion formed at a position lower than the contact portion;
The liquid processing apparatus according to claim 1, further comprising: a connecting portion that connects the contact portion and the flat portion and has an inclined surface. The support member is
The liquid processing apparatus according to claim 2, further comprising a guide pin having an inclined surface that is inclined downward from a position higher than the contact portion toward the center of the substrate. The support member is
The liquid processing apparatus according to claim 3, wherein a gap is provided between the connecting portion and the guide pin. The upper surface of the outer peripheral portion has hydrophilicity,
The liquid processing apparatus according to claim 1, wherein an upper surface of the contact portion has hydrophobicity. The upper surface of the flat portion has hydrophilicity,
The liquid processing apparatus according to claim 2, wherein upper surfaces of the contact portion and the connecting portion have hydrophobicity. The support member is
An inner peripheral portion that is located radially inside the substrate from the contact portion and formed lower than the contact portion,
The inner periphery is
The liquid processing apparatus according to claim 1, further comprising an inclined surface that is inclined downward toward the center of the substrate. The support member is
The liquid processing apparatus according to claim 1, further comprising a heating unit.

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