JP2020068372A - Substrate processing apparatus, substrate processing method, and storage medium - Google Patents

Abstract

To prevent a pattern from collapsing when a drying liquid is removed from a substrate surface.SOLUTION: A substrate processing apparatus includes: a substrate holding part configured to hold a substrate; a drying liquid supply part configured to supply a drying liquid toward a surface of the substrate held by the substrate holding part; a temperature adjustment part configured to change a temperature of the surface of the substrate; and a controller configured to control the temperature adjustment part. The controller controls the temperature adjustment part so as to generate a temperature difference in a liquid film of the drying liquid supplied onto the surface of the substrate.SELECTED DRAWING: Figure 4

Description

  The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a storage medium.

  As a method of drying the substrate after the cleaning treatment, a method of supplying a drying liquid to the surface of the substrate to replace the rinse liquid with the drying liquid and then removing the drying liquid has been studied (see Patent Document 1). .

JP, 2014-90015, A

  The present disclosure provides a technique capable of preventing pattern damage at the time of removing a drying liquid from a substrate surface.

  A substrate processing apparatus according to an aspect of the present disclosure includes a substrate holding unit that holds a substrate, a drying liquid supply unit that supplies a drying liquid to the surface of the substrate held by the substrate holding unit, and the surface temperature of the substrate is changed. It includes a temperature adjustment unit for controlling the temperature adjustment unit and a control unit for controlling the temperature adjustment unit. The control unit controls the temperature adjusting unit so as to cause a temperature difference in the liquid film of the drying liquid supplied to the surface of the substrate.

  According to one exemplary embodiment, it is possible to prevent pattern damage during removal of the drying liquid from the substrate surface.

FIG. 1 is a plan view schematically showing a substrate processing system according to an exemplary embodiment. FIG. 2 is a schematic diagram of a substrate processing apparatus according to an exemplary embodiment. FIG. 3 is a flowchart illustrating a substrate processing method according to an exemplary embodiment. FIG. 4A, FIG. 4B, and FIG. 4C are diagrams for explaining the IPA discharging process by the temperature adjusting unit according to the first embodiment. FIG. 5A, FIG. 5B, and FIG. 5C are diagrams for explaining the IPA discharging process by the temperature adjusting unit according to the modification of the first embodiment. FIG. 6A, FIG. 6B, and FIG. 6C are diagrams for explaining the IPA discharging process by the temperature adjusting unit according to the modification of the first embodiment. FIG. 7A, FIG. 7B, and FIG. 7C are diagrams illustrating the IPA discharging process by the temperature adjusting unit according to the modification of the second embodiment. FIG. 8A, FIG. 8B, and FIG. 8C are diagrams for explaining the IPA discharging process by the temperature adjusting unit according to the modification of the second embodiment. FIG. 9A, FIG. 9B, and FIG. 9C are diagrams for explaining the IPA discharging process by the temperature adjusting unit according to the modification of the second embodiment. FIG. 10A, FIG. 10B, and FIG. 10C are diagrams for explaining the IPA discharging process by the temperature adjusting unit according to the modification of the second embodiment. 11A and 11B are diagrams illustrating another example of the IPA discharging process by the temperature adjusting unit. FIG. 12A and FIG. 12B are diagrams illustrating another example of the IPA discharging process by the temperature adjusting unit. 13A and 13B are diagrams illustrating another example of the IPA discharging process by the temperature adjusting unit.

  Hereinafter, various exemplary embodiments will be described in detail with reference to the drawings. In each drawing, the same or corresponding parts are designated by the same reference numerals.

<First Embodiment>
[Structure of substrate processing system]
FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to the first embodiment. In the following, in order to clarify the positional relationship, the X axis, the Y axis, and the Z axis that are orthogonal to each other are defined, and the Z axis positive direction is defined as the vertically upward direction.

  As shown in FIG. 1, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are provided adjacent to each other.

  The loading / unloading station 2 includes a carrier placement unit 11 and a transport unit 12. On the carrier mounting unit 11, a plurality of substrates, in the present embodiment, a plurality of carriers C that accommodate semiconductor wafers (hereinafter, wafer W) in a horizontal state are mounted.

  The transfer unit 12 is provided adjacent to the carrier mounting unit 11, and includes a substrate transfer device 13 and a transfer unit 14 inside. The substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 13 is capable of moving in the horizontal direction and the vertical direction and turning about the vertical axis, and transfers the wafer W between the carrier C and the transfer part 14 using the wafer holding mechanism. To do.

  The processing station 3 is provided adjacent to the transport unit 12. The processing station 3 includes a transport unit 15 and a plurality of processing units 16. The plurality of processing units 16 are arranged side by side on the transport unit 15.

  The transfer unit 15 includes a substrate transfer device 17 inside. The substrate transfer device 17 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 17 is capable of moving in the horizontal direction and the vertical direction and turning about the vertical axis, and transfers the wafer W between the transfer unit 14 and the processing unit 16 using the wafer holding mechanism. I do.

  The processing unit 16 performs a predetermined substrate processing on the wafer W transferred by the substrate transfer device 17 under the control of the control unit 18 of the control device 4 described later.

  The substrate processing system 1 also includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs that control various processes executed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the program stored in the storage unit 19.

  The program may be recorded in a computer-readable storage medium and installed in the storage unit 19 of the control device 4 from the storage medium. The computer-readable storage medium includes, for example, a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.

  In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C placed on the carrier placing part 11 and receives the taken out wafer W. Place it on the transfer unit 14. The wafer W placed on the delivery unit 14 is taken out from the delivery unit 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16.

  The wafer W carried into the processing unit 16 is processed by the processing unit 16, then carried out of the processing unit 16 by the substrate transfer device 17, and placed on the delivery unit 14. Then, the processed wafer W placed on the delivery section 14 is returned to the carrier C of the carrier placing section 11 by the substrate transfer device 13.

[Structure of substrate processing apparatus]
The configuration of the substrate processing apparatus 10 included in the substrate processing system 1 will be described with reference to FIG. The substrate processing apparatus 10 is included in the processing unit 16 of the substrate processing system 1.

  As shown in FIG. 2, the substrate processing apparatus 10 includes a chamber 20, a substrate holding mechanism 30, a processing liquid supply unit 40, a recovery cup 50, and a temperature adjustment unit 60.

  The chamber 20 houses the substrate holding mechanism 30, the processing liquid supply unit 40, and the recovery cup 50. An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20. The FFU 21 has a function of forming a downflow in the chamber 20. The FFU 21 forms the downflow gas by supplying the downflow gas supplied from a downflow gas supply pipe (not shown) into the chamber 20.

  The substrate holding mechanism 30 has a function of holding the wafer W rotatably. The substrate holding mechanism 30 includes a holding portion 31, a support portion 32, and a driving portion 33. The holding unit 31 holds the wafer W horizontally. The support column 32 is a member extending in the vertical direction, and has a base end rotatably supported by the drive unit 33 and horizontally supports the holding unit 31 at the front end. The drive unit 33 rotates the support column 32 about the vertical axis. The substrate holding mechanism 30 uses the drive unit 33 to rotate the supporting column 32 to rotate the supporting unit 31 supported by the supporting unit 32, thereby rotating the wafer W retained by the supporting unit 31. .

  The processing liquid supply unit 40 supplies the processing liquid to the wafer W. The processing liquid supply unit 40 is connected to the processing liquid supply source 80. The processing liquid supply unit 40 has a nozzle 41 for supplying the processing liquid from the processing liquid supply source 80. The processing liquid supply source 80 has a plurality of processing liquid supply sources, and changes the processing liquid to be supplied according to the progress of the processing of the wafer W. In addition, the nozzle 41 is provided in the head portion of a nozzle arm (not shown) that can rotate and move in the lateral direction (horizontal direction). Then, the processing liquid can be supplied onto the wafer W while changing the position of the tip of the nozzle 41 by the rotational movement of the nozzle arm.

  As the processing liquid supply source 80, a chemical liquid supply source 81, a DIW supply source 82, and an IPA supply source 83 are provided. The chemical liquid supply source 81 supplies one or a plurality of chemical liquids used for processing the surface of the wafer W. Further, the DIW supply source 82 supplies DIW (Deionized Water: pure water) used for rinsing the surface of the wafer W. Further, the IPA supply source 83 supplies IPA for replacing the DIW on the surface of the wafer W with IPA (isopropyl alcohol). IPA is a kind of volatile dry liquid, and has a smaller surface tension than DIW. Therefore, by first replacing the DIW on the surface of the wafer W with IPA and then removing the IPA and drying the wafer W, the pattern on the surface of the wafer W is prevented from being damaged when the wafer W is dried. The chemical liquid supply source 81, the DIW supply source 82, and the IPA supply source 83 are connected to the nozzle 41 via valves V1, V2, and V3, respectively. By switching the opening and closing of the valves V1, V2 and V3, the processing liquid supplied from the nozzle 41 to the wafer W can be changed.

  Although one nozzle 41 is shown in FIG. 2, a plurality of nozzles may be individually provided according to a plurality of types of treatment liquids, or one nozzle may be shared by some treatment liquids. May be.

  The movement of the nozzle 41 and the supply / stop of the liquid from each supply source of the processing liquid supply source 80 are controlled by the control unit 18 described above.

  The recovery cup 50 is arranged so as to surround the holding unit 31, and collects the processing liquid scattered from the wafer W by the rotation of the holding unit 31. A drain port 51 is formed at the bottom of the recovery cup 50, and the processing liquid collected by the recovery cup 50 is discharged to the outside of the processing unit 16 through the drain port 51. An exhaust port 52 for discharging the gas supplied from the FFU 21 to the outside of the processing unit 16 is formed at the bottom of the recovery cup 50.

  The temperature adjusting unit 60 has a function of controlling the temperature of the surface of the wafer W held on the holding unit 31. In the substrate processing apparatus 10 shown in FIG. 2, the temperature adjusting unit 60 includes a first temperature adjusting unit 61 that controls the temperature of the entire surface of the wafer W on the back surface side of the holding unit 31, and a linear shape provided on the front surface side of the wafer W. And the second temperature adjusting unit 62. The first temperature adjusting unit 61 and the second temperature adjusting unit 62 respectively perform heating or cooling to control the temperature distribution on the surface of the wafer W. That is, the first temperature adjusting unit 61 and the second temperature adjusting unit 62 have a function as a substrate heating unit or a substrate cooling unit.

  The first temperature adjusting unit 61 is provided on the back surface side of the wafer W and controls the temperature of the entire wafer W. However, although the first temperature adjusting unit 61 controls the temperature of the wafer W planarly, it does not heat or cool the wafer W at a uniform temperature, but biases the temperature distribution on the surface of the wafer W. You may comprise so that it may be held. For example, the first temperature adjusting unit 61 is divided into a plurality of regions, and so-called multi-channel control is performed to perform independent temperature control for each of the regions, so that different positions of the wafer W are heated at different heating temperatures. Good. Further, the surface temperature of the wafer W may be configured to have a predetermined gradient by using multi-channel control. When the wafer W is heated by the first temperature adjusting unit 61, a hot plate can be used as the first temperature adjusting unit 61. Further, when the wafer W is cooled by the first temperature adjusting unit 61, a cooling plate can be used as the first temperature adjusting unit 61. However, the configuration of the first temperature adjusting unit 61 is not limited to these.

  The second temperature adjusting unit 62 is a line-type heat source or cooling source that is separated from the surface of the wafer W by a predetermined distance and extends in the lateral direction (horizontal direction) (see also FIG. 4A). FIG. 2 shows a state in which the second temperature adjusting section 62 is arranged so that the longitudinal direction thereof is the Y-axis direction. The second temperature adjusting unit 62 is movable in the lateral direction (horizontal direction) and in a direction intersecting the longitudinal direction of the second temperature adjusting unit 62 (for example, a direction orthogonal to the longitudinal direction). . By moving along the X-axis direction, the second temperature adjusting unit 62 shown in FIG. 2 can move the entire region of the holding unit 31 that overlaps the surface of the wafer W in plan view. With such a configuration, it is possible to heat or cool a specific region of the wafer W (a region close to the second temperature adjusting unit 62). When the wafer W is heated by the second temperature adjusting unit 62, a laser or a lamp can be used as the second temperature adjusting unit 62. Further, when the wafer W is cooled by the second temperature adjusting section 62, an air flow (cooled gas) can be used as the second temperature adjusting section 62. However, the configuration of the second temperature adjusting unit 62 is not limited to these.

  The adjustment of the heating temperature or the cooling temperature by the first temperature adjusting unit 61 and the second temperature adjusting unit 62, the movement of the second temperature adjusting unit 62, and the like are controlled by the control unit 18 described above.

[Substrate processing method]
The contents of the liquid processing performed using the substrate processing apparatus 10 will be described with reference to FIG.

  First, when the wafer W loaded into the processing unit 16 by the substrate transfer device 17 is held by the holding portion 31 of the substrate holding mechanism 30, the nozzle 41 is moved to the processing position on the wafer W. Then, the wafer W is rotated at a predetermined rotation speed to supply the chemical liquid from the nozzle 41, thereby performing the chemical liquid treatment (S01). At this time, the supporting column 32 and the driving unit 33 shown in FIG. 2 correspond to a rotating mechanism that rotates the wafer W held by the holding unit 31.

  Next, a rinse cleaning process is performed in which the processing liquid supplied from the nozzle 41 is switched to DIW for cleaning (S02). Specifically, DIW is supplied to the wafer W on which the liquid film of the chemical liquid is present while the wafer W is rotated. By supplying DIW, the residue attached to the wafer W is washed away by DIW.

  After performing the rinse cleaning process for a predetermined time, the supply of DIW from the nozzle 41 is stopped. Next, IPA is supplied from the nozzle 41 to the surface of the rotating wafer W to perform a replacement process for replacing DIW on the surface of the wafer W with IPA (S03: dry liquid supply step). By supplying IPA to the surface of the wafer W, a liquid film of IPA is formed on the surface of the wafer W. As a result, the DIW remaining on the surface of the wafer W is replaced with IPA.

  After the DIW on the surface of the wafer W is sufficiently replaced with IPA, the supply of IPA to the wafer W is stopped. Then, a discharging process for discharging the IPA remaining on the surface of the wafer W from the surface of the wafer W is performed (S04: discharging step). By discharging IPA from the surface of the wafer W, the surface of the wafer W is dried. In the substrate processing apparatus 10, the temperature adjustment unit 60 makes the temperature of the surface of the wafer W uneven so as to accelerate the discharge of IPA from the surface of the wafer W. This point will be described later.

  When the surface of the wafer W is dried, the liquid processing on the wafer W is completed. The wafer W is unloaded from the substrate processing apparatus 10 in the reverse order of the loading process.

[Discharge processing]
With reference to FIGS. 4A to 4C, the IPA discharge process using the temperature adjusting unit 60 will be described. FIG. 4A is a perspective view for explaining the operation of the second temperature adjusting section 62 arranged on the surface of the wafer W. Further, FIG. 4B is a diagram illustrating the temperature control of the wafer W by the first temperature adjusting unit 61 and the second temperature adjusting unit 62. As shown in FIG. 4B, a predetermined pattern W1 (for example, a resist pattern) is formed on the surface of the wafer W. Further, FIG. 4C is a diagram illustrating the temperature of the surface of the wafer W.

  Before the IPA discharging process, the IPA liquid film L is formed so as to cover the surface of the wafer W. In the example shown in FIGS. 4A to 4C, the first temperature adjusting unit 61 functions as a substrate cooling unit that cools the back surface of the wafer W to a predetermined temperature. The surface of the wafer W is cooled to a constant temperature by the first temperature adjusting unit 61. The second temperature adjusting unit 62 also functions as a substrate heating unit that heats a predetermined position on the front surface of the wafer W from the front surface side of the wafer W. When the IPA is discharged, as shown in FIG. 4B, the second temperature adjusting unit 62 is arranged close to the end of the wafer W. Then, the surface of the end portion of the wafer W is heated by the second temperature adjusting unit 62.

  As a result, as shown in FIG. 4C, with respect to the temperature of the surface of the wafer W, the temperature T1 at the end (outer periphery) on the side where the second temperature adjusting unit 62 is arranged closely is the temperature T2 in the other region. It will be higher than that. Then, a drying target area A1 that changes from the temperature T1 to the temperature T2 is formed between the end portion of the wafer W having the temperature T1 and the unprocessed area A2 having the temperature T2. That is, the surface of the wafer W includes the drying target area A1 and the unprocessed area A2 adjacent to the drying target area A1. In other words, the temperature of the edge portion La of the IPA liquid film L closer to the drying target area A1 is higher than the temperature of the remaining portion Lb of the IPA liquid film L corresponding to the unprocessed area A2. Therefore, there is a temperature difference between the edge portion La and the remaining portion Lb. Therefore, in the drying target area A1, the aggregation of the IPA liquid film L proceeds to the untreated area A2 side where the temperature is low.

  In the area A1 to be dried, the temperature of the surface of the wafer W is higher than that in the other areas having the temperature T2, so that evaporation (volatilization) of IPA from the IPA liquid film L is promoted. As a result, the film thickness of the IPA liquid film L in the drying target area A1 is smaller than the film thickness of the unprocessed area A2 (area having the temperature T2). As a result, a surface tension difference occurs between the IPA liquid film L in the drying target area A1 and the IPA liquid film L in the untreated area A2, and the surface tension of the IPA liquid film L in the drying target area A1 is untreated. It is smaller than A2. As a result, so-called Marangoni convection occurs in which the edge portion La of the IPA liquid film L in the drying target area A1 is pulled toward the untreated area A2 side (right side in FIG. 4). The edge La of the IPA liquid film L moves to the low temperature side by the force generated by the Marangoni convection.

  At this time, as shown in FIG. 4B, when the second temperature adjusting unit 62 is moved in the arrow S direction, the drying target area A1 moves in the arrow S direction from the position shown in FIG. 4C. By moving the second temperature adjusting unit 62 in accordance with the aggregation speed of the IPA liquid film L (movement speed of the edge La of the IPA liquid film L), the aggregation of the IPA liquid film L by Marangoni convection can be advanced. Therefore, the IPA on the surface of the wafer W can be moved in the arrow S direction. Therefore, the IPA can be discharged from the surface of the wafer W at the end Wa of the wafer W on the downstream side along the arrow S direction.

  The area of the surface of the wafer W on which the IPA liquid film L is dried is the “drying target area A1”. On the other hand, a region of the surface of the wafer W where the IPA liquid film L has not been dried is the “unprocessed region A2”. In the example shown in FIG. 4, the drying target region A1 has a region of the surface of the wafer W heated by the second temperature adjusting unit 62, that is, a temperature gradient that changes from the temperature T1 to the temperature T2. Area. As described above, in the drying target area A1, the edge La of the IPA liquid film L is pulled toward the untreated area A2 by Marangoni convection, so that the end of the IPA liquid film L moves. Therefore, by controlling the position of the drying target area A1 so that a temperature gradient is formed on the surface of the wafer W between the drying target area and other areas, the aggregation of IPA on the surface of the wafer W is prevented. You can proceed.

[Action / effect]
As described above, in the substrate processing apparatus 10, the temperature control of the surface of the wafer W by the temperature adjusting unit 60 is used to form a temperature difference between the drying target area A1 and the unprocessed area A2 on the surface of the wafer W. It Specifically, the temperature difference is generated in the IPA liquid film L so that the temperature of the edge portion La of the IPA liquid film L is high and the temperature of the remaining portion Lb of the IPA liquid film L is low. As a result, Marangoni convection occurs at the edge La of the IPA liquid film L. Therefore, the IPA is discharged from the surface of the wafer W while aggregating the IPA in a predetermined direction on the surface of the wafer W (specifically, on the side where the temperature is low). As described above, the IPA is discharged from the surface of the wafer W by utilizing the coagulation of IPA using Marangoni convection, so that the pattern collapse of the surface of the wafer W at the time of removing the IPA from the surface of the wafer W is prevented. You can

  As a method of removing the IPA from the surface of the wafer W, a method of rotating the wafer W and utilizing the centrifugal force to move the IPA to the outer peripheral side has been conventionally used. In this case, the IPA on the surface of the wafer W receives a centrifugal force and flows outward. However, when the IPA moves due to such an external force, a boundary layer having an extremely thin liquid is formed at the end of the IPA liquid film. Since the boundary layer is a region where the IPA cannot move due to an external force, the surface of the wafer W is dried only by the evaporation of the IPA. At this time, the evaporation rate of IPA is not uniform on the surface of the wafer W. In particular, since many patterns W1 are formed on the surface of the wafer W, the liquid level height of the IPA easily varies due to the shape of the pattern W1 and the like. When the evaporation of IPA progresses in a state where the liquid level of IPA is different, the difference in stress derived from the liquid level affects the pattern W1, and there is a possibility that the pattern W1 may be damaged such as the pattern collapses. .

  On the other hand, in the substrate processing apparatus 10, IPA on the surface of the wafer W is aggregated by utilizing Marangoni convection generated by the temperature gradient as described above. That is, when the IPA is moved by utilizing the difference in surface tension instead of moving by receiving an external force, it is possible to prevent the formation of a boundary layer at the edge La of the IPA liquid film L. That is, since it is possible to eliminate a region where drying by evaporation is performed, it is possible to prevent the pattern W1 from being damaged such as a pattern collapse when the IPA is removed. Since the pattern W1 formed on the surface of the wafer W has a high aspect ratio in recent years, the risk of pattern collapse is increased, but the pattern collapse occurs by using the above-described removal of IPA using Marangoni convection. It is possible to reduce the occurrence rate of. The temperature gradient on the surface of the wafer W is not necessarily low on the side where the IPA liquid film L is present, and is not necessarily high on the side where the IPA liquid film L is not present (the side where the wafer W is exposed). Good. Further, it is sufficient that a desired temperature difference is formed between the drying target area and another area (untreated area), and the temperature gradient does not have to be formed in the untreated area A2 (untreated area). .

  The surface temperature of the wafer W controlled by the temperature adjusting unit 60 is preferably controlled to the extent that the volatilization of IPA is not promoted. In order to generate Marangoni convection in the IPA, the temperature may be higher than room temperature (about 23 ° C.), and for example, the temperature adjusting unit 60 can be controlled so that the surface temperature of the wafer W becomes 30 ° C. or higher. . If the surface temperature of the wafer W becomes too high, the volatilization of the IPA is promoted rather than the movement due to the aggregation of the IPA, and the pattern is more likely to be damaged.

  Further, as shown in FIG. 4, in the substrate processing apparatus 10, by moving the second temperature adjusting unit 62 horizontally from one end of the wafer W in the arrow S direction, the IPA liquid film is moved in the arrow S direction. L is aggregated and IPA is discharged from the end Wa on the downstream side in the arrow S direction. Thus, the IPA moves on the surface of the wafer W along the arrow S direction. In order to promote the movement of the IPA, the wafer W on the holder 31 may be slightly tilted (about 0.1 ° to 1 °) so that the end portion Wa is on the lower side. As a method of inclining the wafer W on the holding unit 31, there is a method of laterally moving the position of the support column 32 that supports the holding unit 31 to cause so-called axial misalignment. As described above, the wafer W may be slightly inclined to accelerate the discharge of the IPA from the end portion Wa.

  The movement of the second temperature adjusting unit 62, the cooling temperature of the first temperature adjusting unit 61, and the like are changed by the control of the control unit 18. The control unit 18 may control each unit of the temperature adjustment unit 60 by executing a predetermined program based on the liquid characteristics of IPA and the like. In addition, the control unit 18 operates each unit of the temperature adjusting unit 60 based on, for example, information on the state of the surface of the wafer W acquired by a camera that observes the surface of the wafer W installed in the substrate processing apparatus 10. You may perform the control which changes.

<First Modification>
Next, a modified example of the temperature adjusting unit 60 will be described. As described above, in the vicinity of the edge La of the IPA liquid film L, the temperature on the side where the IPA liquid film L is present is low, and the temperature on the side where the IPA liquid film L is not present (the side where the wafer W is exposed) is When the temperature gradient is formed to be high, Marangoni convection occurs at the edge La of the IPA liquid film L. By causing this Marangoni convection, the IPA liquid film L aggregates by utilizing surface tension without forming a boundary layer. Therefore, if the temperature gradient as described above can be formed on the surface of the wafer W, the configuration of the temperature adjusting unit 60 can be appropriately changed.

  FIG. 5A to FIG. 5C are diagrams showing a temperature adjusting unit 60A according to the first modification. 5A to 5C are diagrams corresponding to FIGS. 4A to 4C. The temperature adjustment unit 60A is different from the temperature adjustment unit 60 in the following points. That is, in the temperature adjusting unit 60A, the temperature gradient is formed on the front surface of the wafer W by changing the heating temperature according to the position of the first temperature adjusting unit 61 provided on the back surface side of the wafer W. That is, the second temperature adjusting unit 62 is not used.

  In FIG. 5B, the heating temperature at each position by the first temperature adjusting unit 61 is shown by gradation. That is, the first temperature adjusting section 61 controls the heating temperature such that the heating temperature at the left end Wb of the wafer W is high and the heating temperature becomes lower toward the right end Wc of the drawing. As a result, as shown in FIG. 5C, the surface temperature of the wafer W has a temperature gradient as a whole from the end Wb on the left side in the drawing to the end Wc on the right side in the drawing. That is, in the example shown in FIG. 5, a temperature gradient is formed in both the drying target area A1 and the untreated area A2.

  As a result, as shown in FIG. 5B, the IPA liquid film L moves toward the end Wc side due to Marangoni convection from the end Wb side of the wafer W. Since the surface temperature of the wafer W has a temperature gradient as a whole, even if the edge La of the IPA liquid film L moves to the edge Wc side, the edge La must exist on the drying target area A1. become. Therefore, the aggregation and movement of the IPA liquid film L due to Marangoni convection continues. That is, the temperature gradient formed on the entire surface of the wafer W is such that the temperature on the side where the IPA liquid film L exists is low and the temperature on the side where the IPA liquid film L does not exist (end Wb side where the wafer W is exposed). Functions as a temperature gradient that increases. As a result, the IPA liquid film L moves to the end Wc side and is discharged from the end Wc side.

  As described above, in the first temperature adjusting unit 61, when the heating temperature of the wafer W can be controlled for each different place, even if the second temperature adjusting unit 62 is not used in combination, the temperature of the surface of the wafer W has a gradient. Can be provided. Therefore, the temperature gradient may be used to control the movement and discharge of the IPA liquid film L. Even with such a configuration, it is possible to reduce the occurrence rate of pattern collapse.

<Second Modification>
FIG. 6A to FIG. 6C are diagrams showing a temperature adjusting unit 60B according to the second modification. FIGS. 6A to 6C are diagrams corresponding to FIGS. 4A to 4C. The temperature adjustment unit 60B differs from the temperature adjustment unit 60 in the following points. That is, in the temperature adjusting unit 60B, instead of using the first temperature adjusting unit 61 provided on the back surface side of the wafer W, the third temperature adjusting unit 63 arranged in parallel with the second temperature adjusting unit 62 is used. Thus, a temperature gradient is formed on the surface of the wafer W. That is, the first temperature adjusting unit 61 is not used.

  In the temperature adjustment unit 60B, like the second temperature adjustment unit 62, the third temperature adjustment unit 63 can also be a line-type heat source or a cooling source extending in the horizontal direction (horizontal direction). In the temperature adjusting unit 60B, the second temperature adjusting unit 62 serves as a heat source and the third temperature adjusting unit 63 serves as a cooling source. Then, as shown in FIGS. 6A and 6B, the second temperature adjusting unit 62 and the third temperature adjusting unit 63 extend in parallel with each other with the edge La of the IPA liquid film L sandwiched therebetween. Further, the third temperature adjusting unit 63 is arranged so as to be on the IPA liquid film L side.

  As a result, as shown in FIG. 6C, the drying target area A1 is formed between the second temperature adjusting section 62 and the third temperature adjusting section 63. Since the third temperature adjusting unit 63 serving as a cooling source is arranged on the IPA liquid film L side, in the drying target area A1, the temperature on the side where the IPA liquid film L exists is low and the side where the IPA liquid film L does not exist ( The temperature gradient is formed so that the temperature on the side where the wafer W is exposed) becomes higher. Therefore, the edge La of the IPA liquid film L moves toward the third temperature adjusting unit 63 side.

  At this time, when the second temperature adjusting unit 62 and the third temperature adjusting unit 63 are moved in the arrow S direction in accordance with the movement of the edge La, as shown in FIG. 6B, the drying target area A1 becomes , In the direction of arrow S from the position shown in FIG. By moving the second temperature adjusting unit 62 and the third temperature adjusting unit 63 in accordance with the aggregation speed of the IPA liquid film L (moving speed of the edge La of the IPA liquid film L), Marangoni convection at the edge La is caused. The aggregation of the IPA liquid film L can be promoted. As a result, the IPA on the surface of the wafer W can be moved in the arrow S direction. Therefore, the IPA can be discharged from the surface of the wafer W at the end Wa of the wafer W on the downstream side along the arrow S direction.

  Thus, even when the temperature adjusting unit 60B is formed by combining the second temperature adjusting unit 62 and the third temperature adjusting unit 63, which are two line-type temperature adjusting units, the temperature of the surface of the wafer W is provided with a gradient. You can Therefore, the temperature gradient may be used to control the movement and discharge of the IPA liquid film L. Even with such a configuration, it is possible to reduce the occurrence rate of pattern collapse.

<Second Embodiment>
Next, a second embodiment of the temperature adjusting unit will be described. In the first embodiment, the Marangoni convection of IPA caused by the temperature gradient on the surface of the wafer W is used to promote the movement of the IPA liquid film L in one direction (for example, the arrow S direction shown in FIG. 4B). The case was explained. Therefore, in the first embodiment, the IPA is discharged from one end of the wafer W (for example, the end Wa shown in FIG. 4B). On the other hand, in the second embodiment, a case will be described in which the Marangoni convection of IPA caused by the temperature gradient on the surface of the wafer W is used to promote the movement of the IPA liquid film L from the center of the wafer W to the outer peripheral side. . Since the moving direction of the IPA liquid film L is different and is from the center to the outer peripheral direction, the IPA is discharged from either the outer periphery of the wafer W.

  The point that a temperature gradient is formed on the surface of the wafer W is the same as in the first embodiment. That is, in the vicinity of the end of the IPA liquid film L, the temperature on the side where the IPA liquid film L is present is low, and the temperature on the side where the IPA liquid film L is not present (the side where the wafer W is exposed) is high. A temperature gradient is formed to cause Marangoni convection at the edge La of the IPA liquid film L.

  FIG. 7A to FIG. 7C and FIG. 8A to FIG. 8C are diagrams showing the temperature adjusting unit 70 according to the second embodiment. FIGS. 7A to 7C and FIGS. 8A to 8C are diagrams corresponding to FIGS. 4A to 4C, respectively.

  The temperature adjusting unit 70 has a first temperature adjusting unit 71 provided on the back surface side of the wafer W and a second temperature adjusting unit 72 provided on the front surface side of the wafer W.

  The first temperature adjusting unit 71 has the same configuration as the first temperature adjusting unit 61 of the temperature adjusting unit 60. That is, the first temperature adjusting unit 71 is provided on the back surface side of the wafer W and controls the temperature of the entire wafer W. The first temperature adjusting unit 71 is also divided into a plurality of regions, and so-called multi-channel control is performed to perform independent temperature control for each region, so that the surface temperature of the wafer W has a predetermined gradient. You may.

  The second temperature adjusting unit 72 is a spot-type heat source provided at a predetermined distance from the surface in a region including the center of the wafer W (see also FIG. 7A). The second temperature adjusting section 72 heats the area including the center of the surface of the wafer W. A laser or a lamp can be used as the second temperature adjusting unit 72. However, the configuration of the second temperature adjusting unit 72 is not limited to these. The “region including the center of the surface of the wafer W” heated by the second temperature adjusting unit 72 is a region including the center of the wafer W and having a diameter smaller than the diameter of the wafer W. The diameter of the region including the center of the surface of the wafer W can be, for example, 30% or less of the diameter of the wafer W.

  The IPA discharging process using the temperature adjusting unit 70 will be described. Before the IPA discharging process, the IPA liquid film L is formed so as to cover the surface of the wafer W. In the example illustrated in FIGS. 7A to 7C, the first temperature adjusting unit 71 functions as a substrate cooling unit that cools the back surface of the wafer W to a predetermined temperature. The surface of the wafer W is cooled to a constant temperature by the first temperature adjusting unit 71.

  The second temperature adjustment unit 72 functions as a substrate heating unit that heats the vicinity of the center of the wafer W from the front surface side of the wafer W. When the IPA is discharged, as shown in FIG. 7B, the second temperature adjusting unit 62 is arranged near the center of the wafer W and heats the surface of the wafer W near the center.

  As a result, as shown in FIG. 7C, the temperature T1 of the region including the center of the surface of the wafer W becomes higher than the temperature T2 of the outer peripheral side which is separated from the second temperature adjusting section 72. Therefore, the drying target area A1 that changes from the temperature T1 to the temperature T2 is formed between the area including the center of the wafer W having the temperature T1 and the unprocessed area A2 having the temperature T2. When this drying target region A1 is formed, the IPA liquid film L is agglomerated toward the region where the temperature is low in the drying target region A1. In the area A1 to be dried, the temperature is gradually lowered toward the outer peripheral side with the temperature T1 of the area including the center of the wafer W as the center.

  In the drying target area A1, Marangoni convection due to the difference in surface tension of the IPA liquid film L occurs. Due to the force generated by this Marangoni convection, the edge portion La (inner peripheral edge) of the IPA liquid film L moves to the low temperature side, that is, the outer peripheral side of the wafer W.

  As the aggregation of the IPA liquid film L progresses, the edge portion La of the IPA liquid film L gradually moves to the outer peripheral side, as shown in FIGS. 8A and 8B. On the other hand, when the cooling of the wafer W by the first temperature adjusting section 71 and the heating of the region including the center of the wafer W by the second temperature adjusting section 72 are continued, the IPA liquid film L is removed (that is, dried) wafer W. The surface temperature of the region including the center of is constant at the temperature T1. On the other hand, the region where the IPA liquid film L on the outer peripheral side remains is maintained at the temperature T2. As a result, as shown in FIG. 8C, an annular drying target region A1 is formed in the vicinity of the edge La of the IPA liquid film L, that is, in a region where the film thickness of the IPA liquid film L changes. Therefore, while Marangoni convection is formed near the edge La of the IPA liquid film L, the edge La moves to the outer peripheral side of the wafer W. In addition, the drying target area A1 also moves to the outer peripheral side as the edge La moves. In this way, by continuing the movement of the edge La of the IPA liquid film L due to Marangoni convection, IPA can be discharged from the surface of the wafer W at the outer periphery of the wafer W.

  Thus, even when the temperature adjusting unit 70 is used, the drying target area A1 can be formed by utilizing the temperature control of the surface of the wafer W. That is, near the edge La of the IPA liquid film L, the temperature on the side where the IPA liquid film L is present is low, and the temperature on the side where the IPA liquid film L is not present (the side where the wafer W is exposed) is high. A temperature gradient is formed at This causes Marangoni convection at the edge La of the IPA liquid film L. As a result, IPA can be discharged from the surface of the wafer W while aggregating the IPA to the side where the surface temperature of the wafer W becomes low. Therefore, it is possible to prevent pattern collapse on the surface of the wafer W when the IPA is removed from the surface of the wafer W.

  In the temperature adjusting unit 70, the heating temperature of the region including the center of the wafer W by the second temperature adjusting unit 72 may be gradually changed as the edge La of the IPA liquid film L moves to the outer circumference. That is, the heating temperature by the second temperature adjusting unit 72 can be changed so that the surface temperature of the wafer W in the region where the edge La is formed is in a temperature range in which Marangoni convection due to the IPA liquid film is likely to occur. In this case, the surface temperature of the region including the center of the wafer W may be higher than the temperature T1. However, the surface temperature of the wafer W may be appropriately changed as long as the wafer W is not affected. it can.

<Third Modification>
Next, a modified example of the temperature adjusting unit 70 will be described. As described above, in the vicinity of the edge La of the IPA liquid film L, the temperature on the side where the IPA liquid film L is present is low, and the temperature on the side where the IPA liquid film L is not present (the side where the wafer W is exposed) is When the temperature gradient is formed to be high, Marangoni convection occurs at the edge La of the IPA liquid film L. By causing this Marangoni convection, the IPA liquid film L aggregates by utilizing surface tension without forming a boundary layer. Therefore, if the temperature gradient as described above can be formed on the surface of the wafer W, the configuration of the temperature adjusting unit 70 can be appropriately changed.

  9 (a) to 9 (c) and 10 (a) to 10 (c) are diagrams showing a temperature adjusting unit 70A according to a third modification. 9A to 9C and FIGS. 10A to 10C are diagrams corresponding to FIGS. 4A to 4C, respectively.

  The temperature adjustment unit 70A differs from the temperature adjustment unit 70 in the following points. That is, in the temperature adjusting unit 70A, the temperature gradient is formed on the front surface of the wafer W by changing the heating temperature according to the position of the first temperature adjusting unit 71 provided on the back surface side of the wafer W. That is, the second temperature adjusting section 72 is not used.

  In FIG. 9B, the heating temperature for each position by the first temperature adjusting unit 71 is shown by gradation. That is, the first temperature adjusting unit 71 controls the heating temperature such that the heating temperature near the center of the wafer W is high and the heating temperature gradually decreases toward the outer peripheral side. As a result, as shown in FIG. 9C, the surface temperature of the wafer W has a temperature gradient from the vicinity of the center of the wafer W toward the outer periphery. That is, a temperature gradient is formed on the entire surface of the wafer W. In other words, in the example shown in FIG. 9, a temperature gradient is formed in both the drying target area A1 and the untreated area A2.

  The temperature adjusting unit 70A has a gas ejecting unit 73 capable of spraying a gas onto the surface of the wafer W, instead of the second temperature adjusting unit 72. The gas ejecting unit 73 blows a gas such as nitrogen onto the surface of the wafer W. By injecting the gas, an opening can be provided in the IPA liquid film L near the center of the wafer W.

  The IPA discharging process using the temperature adjusting unit 70A will be described. Before the IPA discharging process, the IPA liquid film L is formed so as to cover the surface of the wafer W. As described above, the surface temperature of the wafer W is gradually lowered from the vicinity of the center toward the outer peripheral side by the first temperature adjusting unit 71.

  Here, the opening of the IPA liquid film L is formed near the center of the wafer W by the gas ejecting unit 73, and the wafer W is exposed near the center. That is, the drying process of the IPA liquid film L near the center of the wafer W is performed. Therefore, the area near the center of the wafer W is the drying target area A1, and the area on the outer peripheral side of the drying target area A1 is the unprocessed area A2. As a result, the edge portion La (inner peripheral edge) of the IPA liquid film L is formed at the center of the wafer W. When the edge portion La of the IPA liquid film L is formed, the temperature gradient formed on the entire surface of the wafer W is used to promote the aggregation of the IPA liquid film L toward the low temperature region side. As described above, in the drying target area A1, Marangoni convection due to the difference in surface tension of the IPA liquid film L occurs, so that the edge La of the IPA liquid film L moves to the low temperature side, that is, the outer peripheral side of the wafer W. To go.

  As the aggregation of the IPA liquid film L progresses, the edge portion La of the IPA liquid film L gradually moves to the outer peripheral side, as shown in FIGS. 10A and 10B. When the heating of the wafer W by the first temperature adjusting unit 71 is continued, the surface temperature near the center of the wafer W from which the IPA liquid film L has been removed (that is, dried) becomes constant at a predetermined temperature. On the other hand, as shown in FIG. 10C, the temperature gradient remains in the region where the IPA liquid film L on the outer peripheral side remains. Therefore, while Marangoni convection is formed near the edge La of the IPA liquid film L, the edge La moves to the outer peripheral side of the wafer W. That is, the annular drying target area A1 moves to the outer peripheral side as the edge La moves. In this way, by continuing the movement of the edge La of the IPA liquid film L due to Marangoni convection, IPA can be discharged from the surface of the wafer W at the outer periphery of the wafer W.

  Thus, even when the temperature adjusting unit 70A is used, the temperature control of the surface of the wafer W can be used to form the drying target area A1. That is, near the edge La of the IPA liquid film L, the temperature on the side where the IPA liquid film L is present is low, and the temperature on the side where the IPA liquid film L is not present (the side where the wafer W is exposed) is high. A temperature gradient is formed at This causes Marangoni convection at the edge La of the IPA liquid film L. As a result, IPA can be discharged from the surface of the wafer W while aggregating the IPA to the side where the surface temperature of the wafer W becomes low. Therefore, it is possible to prevent pattern collapse on the surface of the wafer W when the IPA is removed from the surface of the wafer W.

  In the temperature adjusting unit 70A, the heating temperature by the first temperature adjusting unit 71 may be gradually changed as the edge La of the IPA liquid film L moves to the outer circumference. That is, the heating temperature by the first temperature adjusting unit 71 can be changed so that the surface temperature of the wafer W in the region where the edge La is formed is in a temperature range in which Marangoni convection due to the IPA liquid film is likely to occur.

  In the temperature adjusting unit 70A, the first temperature adjusting unit 71 controls the heating temperature such that the heating temperature near the center of the wafer W is high and the heating temperature gradually decreases toward the outer peripheral side. However, the method of heating the wafer W by the first temperature adjusting unit 71 is not particularly limited as long as the drying target region A1 can be formed in the region where the edge La of the IPA liquid film L is formed. For example, even when the first temperature adjusting unit 71 is not formed in a shape corresponding to the entire surface of the wafer W but is arranged only in the vicinity of the center of the wafer W, by controlling the heating temperature, the ring-shaped drying on the surface of the wafer W is performed. The target area A1 can be formed. Therefore, it is possible to control the formation of Marangoni convection at the edge La of the IPA liquid film L and the movement of the IPA liquid film L by using the drying target area A1.

[Other]
The embodiments disclosed this time are to be considered as illustrative in all points and not restrictive. The above-described embodiments may be omitted, replaced, or modified in various forms without departing from the scope and spirit of the appended claims.

  For example, in the above embodiment, the case where the dry liquid is IPA has been described, but the dry liquid is not limited to IPA.

  Further, as described in the above embodiments and modifications, the configuration and arrangement of the temperature adjusting unit functioning as the substrate heating unit or the substrate cooling unit can be appropriately changed. For example, in the above-described embodiment, the case where the first temperature adjusting portions 61 and 71 for cooling the entire surface of the wafer W are provided on the back surface side (holding portion 31 side) of the wafer W has been described. May be provided.

  When viewed from above, not only a temperature difference is caused in different regions (the drying target region A1 and the unprocessed region A2) on the surface of the wafer W, but also the IPA liquid in the vertical direction (the height direction of the IPA liquid film L). A temperature difference may be generated in the film L. For example, as shown in FIGS. 11 and 12, the temperature adjusting unit 60 includes a first temperature adjusting unit 61 arranged on the back surface side of the wafer W and a fourth temperature adjusting unit arranged on the front surface side of the wafer W. 64 (low temperature member) may be included. The fourth temperature adjusting unit 64 is configured to move above the wafer W along the surface of the wafer W. The fourth temperature adjusting unit 64 may be set to a temperature lower than the temperature of the first temperature adjusting unit 61 that heats the wafer W. That is, the fourth temperature adjusting unit 64 may be set to a temperature lower than the temperature of the wafer W heated by the first temperature adjusting unit 61. This causes a temperature difference between the upper portion of the IPA liquid film L that contacts the fourth temperature adjustment unit 64 and the lower portion of the IPA liquid film L that contacts the wafer W, and the surface tension acting on the upper portion is relatively high. Becomes large (Marangoni phenomenon). Therefore, the IPA liquid film L is attracted to the fourth temperature adjusting unit 64. Therefore, the control unit 18 controls the operation of the fourth temperature adjusting unit 64 so that the fourth temperature adjusting unit 64 moves along the surface of the wafer W (see arrow S in FIG. 11 and FIG. 12). The liquid film L also moves along the surface of the wafer W by being moved by the fourth temperature adjusting unit 64. As a result, the IPA can be discharged from the surface of the wafer W at a desired route and speed while the control unit 18 appropriately controls the moving direction and moving speed of the fourth temperature adjusting unit 64.

  The fourth temperature adjusting unit 64 may have a mesh shape as shown in FIG. 11. In this case, as shown in FIG. 11B, IPA is adsorbed in the space of the mesh due to the capillary phenomenon. Therefore, the IPA liquid film L is easily moved along with the fourth temperature adjustment unit 64, and thus IPA can be more effectively discharged from the surface of the wafer W.

  The fourth temperature adjusting unit 64 may be configured by one or a plurality of rod-shaped bodies, as shown in FIG. The rod-shaped body may have a linear shape, a curved shape, or a meandering shape. When the fourth temperature adjusting unit 64 is composed of a plurality of rod-shaped bodies, the plurality of rod-shaped bodies may be arranged substantially parallel to each other and may move along the arrangement direction. Even when the fourth temperature adjusting unit 64 is composed of a plurality of rod-shaped bodies, IPA is adsorbed in the space of the mesh due to the capillary phenomenon. Therefore, the IPA liquid film L is easily moved along with the fourth temperature adjustment unit 64, and thus IPA can be more effectively discharged from the surface of the wafer W.

  The fourth temperature adjusting unit 64 may be configured by a plate-shaped body as shown in FIG. The plate-shaped body may have a flat plate shape, or may have a shape similar to that of the wafer W. The lower surface of the plate-shaped body that faces the surface of the wafer W may have an uneven shape. Even when the lower surface of the plate-like body has an uneven shape, the IPA is adsorbed in the space of the mesh due to the capillary phenomenon. Therefore, the IPA liquid film L is easily moved along with the fourth temperature adjustment unit 64, and thus IPA can be more effectively discharged from the surface of the wafer W.

  Although not shown, the fourth temperature adjusting unit 64 may have a shape other than the above, such as a ring shape. The fourth temperature adjusting unit 64 may linearly move above the wafer W, or may rotate above the wafer W by rotating around a predetermined vertical axis.

  The plurality of patterns W1 formed on the surface of the wafer W may be regularly arranged along a predetermined direction. For example, as shown in FIG. 13, when all of the plurality of patterns W1 have a substantially rectangular parallelepiped shape when viewed from above, all of the plurality of patterns W1 are in a predetermined direction (left and right direction in FIG. 13). It may extend along. In this case, a temperature gradient may be formed on the surface of the wafer W so that the drying target area A1 moves to the unprocessed area A2 along the shape of the pattern W1. For example, when the temperature adjusting unit 60 includes the first temperature adjusting unit 61 and the second temperature adjusting unit 62 of the above-described first embodiment, the second temperature adjusting unit 62 may move along the shape of the pattern W1. The pattern W1 may be moved along the longitudinal direction of the pattern W1, or may be moved along the lateral direction of the pattern W1. When the IPA moves along the shape of the pattern W1, the discharge of IPA is less likely to be blocked by the pattern W1. Therefore, even if the pattern W1 is formed on the surface of the wafer W, the movement of the IPA is smooth, and the damage of the pattern W1 when the IPA is discharged from the surface of the wafer W can be prevented.

  In order to form a temperature gradient on the surface of the wafer W so that the drying target area A1 moves to the unprocessed area A2 along the shape of the pattern W1, the substrate processing apparatus 10 acquires the shape of the pattern W1. The acquisition means may be further included. The acquisition means is configured to determine the shape of the pattern W1 by performing image processing on an imaging unit configured to image the surface of the wafer W and an imaged image of the surface of the wafer W captured by the imaging unit. The processing unit may be included. When the notch is formed on the wafer W and the directionality of the pattern W1 with respect to the notch is predetermined, the acquisition unit is configured to acquire the position of the notch. May be. The notch may be, for example, a notch (a U-shaped groove, a V-shaped groove, or the like) or a linear portion that extends linearly (so-called orientation flat). For example, the control unit 18 may be configured to determine the discharge direction of IPA from the surface of the wafer W based on the shape of the pattern W1 acquired by the acquisition unit. In this case, a temperature gradient is formed on the surface of the wafer W so that the IPA liquid film L moves from the drying target area A1 to the unprocessed area A2 along the determined discharge direction. Therefore, it becomes possible to automatically set the discharge direction of the IPA according to the shape of the pattern W1.

  The substrate processing apparatus 10 may further include a surrounding member configured to surround the wafer W by being positioned near the periphery of the wafer W. The upper surface of the surrounding member is located at substantially the same height as the surface of the wafer W, and may extend in the horizontal direction. The upper surface of the surrounding member may be an inclined surface that is inclined downward from the inner peripheral edge located at substantially the same height as the surface of the wafer W toward the outer peripheral edge. The surrounding member may be set to a temperature lower than the temperature of the wafer W. The substrate processing apparatus 10 may further include a gas supply unit configured to blow a gas set to a temperature lower than the temperature of the wafer W toward the upper surface of the surrounding member.

  In any of the above examples, the wafer W may be inclined along the moving direction of the IPA (the moving direction of the drying target area A1) in order to promote the movement of the IPA.

[Example]
Example 1: In one exemplary embodiment, a substrate processing apparatus includes a substrate holding unit that holds a substrate, a drying liquid supply unit that supplies a drying liquid to the surface of the substrate held by the substrate holding unit, and the substrate. A temperature adjusting unit that changes the surface temperature of the device and a control unit that controls the temperature adjusting unit are included. The control unit controls the temperature adjusting unit so as to cause a temperature difference in the liquid film of the drying liquid supplied to the surface of the substrate. As described above, when a temperature difference is generated in the liquid film of the drying liquid supplied to the surface of the substrate, Marangoni convection occurs in the region of the liquid film where the temperature difference is generated, and the drying liquid moves due to Marangoni convection. To do. Therefore, by utilizing this movement of the drying liquid, the drying liquid can be discharged from the substrate surface. With this configuration, the influence of the pattern on the substrate surface can be reduced compared to the case where the drying liquid is discharged from the substrate surface by using external force, and the drying liquid can be removed from the substrate surface. It is possible to prevent pattern damage at the time.

  Example 2: In the apparatus of Example 1, the surface of the substrate includes a drying target region to be subjected to the drying process and an untreated region to which the drying process is not performed, and the control unit sets the drying target region and the non-drying region. The temperature adjustment unit may be controlled so as to generate a temperature difference with the processing region. In this case, Marangoni convection occurs in a region of the liquid film between the drying target region and the untreated region, and the drying liquid moves due to Marangoni convection. Therefore, by utilizing this movement of the dry liquid, the dry liquid can be discharged from the substrate surface.

  Example 3: In the apparatus of Example 2, the temperature adjusting unit includes a substrate cooling unit that cools the substrate and a substrate heating unit that heats the substrate, and the substrate heating unit provides a linear heat source along the surface of the substrate. It is also possible to change the heating position on the surface of the substrate by moving the substrate. By using the substrate heating unit that moves the line-shaped heat source along the surface of the substrate, the region where the Marangoni convection occurs can be finely controlled, and the drying liquid can be suitably removed.

  Example 4: In the apparatus of Example 2 or Example 3, the temperature adjusting unit includes a substrate cooling unit that cools the substrate and a substrate heating unit that heats the substrate, and the substrate cooling unit cools the entire surface of the substrate. Good. When the entire surface of the substrate is cooled by the substrate cooling unit, the substrate heating unit can be used to form a temperature gradient in the region where Marangoni convection is generated while maintaining the entire substrate at a predetermined temperature. Thus, the dry liquid can be suitably removed.

  Example 5: In the apparatus of Example 3, the substrate cooling unit may be configured such that a linear cooling source runs parallel to the substrate heating unit along the surface of the substrate to cool the substrate. In the case of the above aspect, the substrate cooling unit and the substrate cooling unit can be combined to form a temperature gradient in a desired region in which Marangoni convection is generated, so that the drying liquid can be suitably removed.

  Example 6: In the device according to any one of Examples 2 to 5, the control unit controls the temperature adjusting unit to cause a temperature gradient on the surface of the substrate so that the liquid film moves from the drying target region to the untreated region. May be formed. By forming a temperature gradient on the surface of the substrate so that the liquid film moves from the drying target area to other areas, the movement of the drying liquid due to the temperature gradient formed on the substrate surface becomes smooth and It is possible to prevent pattern damage when removing the drying liquid.

  Example 7: In the apparatus of Example 6, a pattern of a predetermined shape is formed on the surface of the substrate, and the control unit controls the temperature adjusting unit so that the drying target region to the untreated region can be formed along the pattern shape. A temperature gradient may be formed on the surface of the substrate so that the liquid film moves to and from. In this case, since the dry liquid moves along the shape of the pattern, the discharge of the dry liquid is less likely to be obstructed by the pattern. Therefore, even if the pattern is formed on the surface of the substrate, the movement of the drying liquid becomes smooth, and it is possible to prevent the pattern from being damaged when the drying liquid is discharged from the surface of the substrate.

  Example 8: In the apparatus of Example 2, the temperature adjusting unit includes a substrate heating unit that heats a part of the surface of the substrate, and the control unit heats the heating unit as time elapses to form a temperature gradient on the surface of the substrate. The heating amount may be increased. By using such a substrate heating unit, a temperature gradient can be formed in a desired region where Marangoni convection is generated, and thus the drying liquid can be suitably removed.

  Example 9: In the apparatus of Example 1, the temperature adjusting unit includes a low temperature member set to a temperature lower than that of the substrate, and the control unit controls the low temperature member above the substrate with the low temperature member in contact with the liquid film. The temperature adjustment unit may be controlled so as to move along the surface of the substrate. In this case, the temperature of the portion of the liquid film in contact with the low temperature member is lower than that of the portion of the liquid film in contact with the substrate, and the surface tension is relatively large (Marangoni phenomenon). Therefore, the liquid film is attracted to the low temperature member. Therefore, by moving the low temperature member along the surface of the substrate, the liquid film also moves along the surface of the substrate along with the low temperature member. As a result, the drying liquid can be discharged from the substrate surface at a desired route and speed while appropriately controlling the moving direction and moving speed of the low temperature member.

  Example 10: In the apparatus according to any one of Examples 1 to 9, the substrate holding unit may be configured to be able to incline the substrate. Since the substrate can be tilted, the movement of the dry liquid utilizing Marangoni convection can be promoted, so that the speed of removing the dry liquid can be increased.

  Example 11: In the apparatus of Example 2, the temperature adjusting unit may include a substrate cooling unit that cools the entire surface of the substrate and a substrate heating unit that heats a region including the center of the substrate. By heating the region including the center of the substrate by the substrate heating unit while cooling the entire surface of the substrate by the substrate cooling unit, it is possible to form a temperature gradient that expands annularly from the region including the center of the substrate. Therefore, the dry liquid can be moved toward the outer peripheral direction of the substrate by utilizing Marangoni convection, and the dry liquid can be suitably removed.

  Example 12: In the substrate processing apparatus of Example 2, the temperature adjusting unit is capable of forming a temperature gradient in which the heating temperature of the region including the center of the substrate is highest and the heating temperature decreases toward the outer periphery. May be included. By utilizing the substrate heating unit described above, it is possible to form a temperature gradient that expands in an annular shape from a region including the center of the substrate. Therefore, the dry liquid can be moved toward the outer peripheral direction of the substrate by utilizing Marangoni convection, and the dry liquid can be suitably removed.

  Example 13: In another exemplary embodiment, a substrate processing method is performed by supplying a drying liquid to a surface of a substrate held by a substrate holding unit and causing a temperature difference in a liquid film of the drying liquid. Draining the drying liquid from the surface of the substrate. In this case, the same effect as that of Example 1 is obtained.

  Example 14: In the method of Example 13, the surface of the substrate on which the liquid film is formed includes a drying target region to which a drying process is performed and an untreated region to which the drying process is not performed. Ejecting may include forming a temperature gradient on the surface of the substrate such that the liquid film moves from the area to be dried to the untreated area. With such a mode, the movement of the liquid film of the drying liquid can be finely controlled by utilizing the temperature gradient, so that the drying liquid can be suitably removed.

  Example 15: In the method of Example 14, a pattern of a predetermined shape is formed on the surface of the substrate, and discharging the drying liquid causes a liquid film to be formed along the shape of the pattern from the drying target region to the untreated region. It may include forming a temperature gradient on the surface of the substrate to move. In this case, the same effect as that of Example 7 is obtained.

  Example 16: The method of Example 15 further comprises determining a discharge direction of the drying liquid by obtaining a shape of the pattern, and discharging the drying liquid is performed from the target area for drying along the determined discharging direction. It may include forming a temperature gradient on the surface of the substrate so that the liquid film moves to the untreated region. In this case, it is possible to automatically set the discharge direction of the drying liquid according to the shape of the pattern.

  Example 17: In the method according to any one of Examples 14 to 16, discharging the drying liquid is moving a liquid film of the drying liquid by moving a heating position from one of the peripheral portions of the substrate to the other. May be included. With such a mode, the drying liquid can be discharged by moving the heating position from one of the peripheral portions of the substrate to the other. Therefore, it is possible to preferably remove the dry liquid.

  Example 18: In another exemplary embodiment, a computer-readable storage medium stores a program for causing a device to perform the method of any one of Examples 13 to 17. In this case, the same effects as those of the substrate processing method described above are obtained. In the present specification, the computer-readable storage medium includes a non-transitory tangible medium (non-transitory computer recording medium) (for example, various main storage devices or auxiliary storage devices) and a propagation signal (transitory computer recording medium). ) (Eg, a data signal that can be provided over a network).

  DESCRIPTION OF SYMBOLS 1 ... Substrate processing system, 10 ... Substrate processing apparatus, 16 ... Processing unit, 18 ... Control part, 60, 60A, 60B, 70, 70A ... Temperature adjustment part, 61, 71 ... 1st temperature adjustment part, 62, 72 ... 2nd temperature adjustment part, 63 ... 3rd temperature adjustment part, 64 ... 4th temperature adjustment part (low temperature member), 73 ... Gas injection part, A1 ... Drying target area, A2 ... Unprocessed area, L ... IPA liquid film, La ... edge.

Claims (18)

A substrate holding unit that holds the substrate;
A drying liquid supply unit that supplies a drying liquid to the surface of the substrate held by the substrate holding unit;
A temperature adjusting unit for changing the surface temperature of the substrate,
A control unit for controlling the temperature adjusting unit,
The substrate processing apparatus, wherein the control unit controls the temperature adjusting unit so as to generate a temperature difference in a liquid film of the drying liquid supplied to the surface of the substrate. The surface of the substrate includes a drying target region to be subjected to a drying process, and an untreated region not subjected to the drying process,
The apparatus according to claim 1, wherein the control unit controls the temperature adjusting unit so as to generate a temperature difference between the drying target region and the unprocessed region. The temperature adjusting unit includes a substrate cooling unit that cools the substrate and a substrate heating unit that heats the substrate,
The device according to claim 2, wherein the substrate heating unit changes a heating position on the surface of the substrate by moving a linear heat source along the surface of the substrate. The temperature adjusting unit includes a substrate cooling unit that cools the substrate and a substrate heating unit that heats the substrate,
The apparatus according to claim 2, wherein the substrate cooling unit cools the entire surface of the substrate.   The apparatus according to claim 3, wherein the substrate cooling unit runs a line-shaped cooling source in parallel with the substrate heating unit along a surface of the substrate to cool the substrate.   The control unit controls the temperature adjusting unit to form a temperature gradient on the surface of the substrate so that the liquid film moves from the drying target region to the unprocessed region. The apparatus according to claim 1. A pattern of a predetermined shape is formed on the surface of the substrate,
The control unit controls the temperature adjusting unit to form a temperature gradient on the surface of the substrate so that the liquid film moves from the drying target region to the unprocessed region along the shape of the pattern. The device of claim 6, wherein   The temperature adjustment unit includes a substrate heating unit that heats a part of the surface of the substrate, and the control unit increases the heating amount of the heating unit as time elapses to form a temperature gradient on the surface of the substrate. The device of claim 2, wherein The temperature adjustment unit includes a low temperature member set to a temperature lower than the substrate,
The control unit controls the temperature adjusting unit so that the low temperature member moves along the surface of the substrate above the substrate in a state where the low temperature member is in contact with the liquid film. The described device.   The substrate processing apparatus according to claim 1, wherein the substrate holding unit can tilt the substrate.   The apparatus according to claim 2, wherein the temperature adjusting unit includes a substrate cooling unit that cools the entire surface of the substrate and a substrate heating unit that heats a region including the center of the substrate.   The temperature adjusting unit includes a substrate heating unit capable of forming a temperature gradient in which a heating temperature of a region including a center of the substrate is highest and a heating temperature decreases toward an outer periphery. apparatus. Supplying a drying liquid to the surface of the substrate held by the substrate holder,
Discharging the dry liquid from the surface of the substrate by causing a temperature difference in the liquid film of the dry liquid. The surface of the substrate on which the liquid film is formed includes a drying target region to which a drying process is performed, and an untreated region where the drying process is not performed,
14. The method according to claim 13, wherein discharging the drying liquid comprises forming a temperature gradient on the surface of the substrate so that the liquid film moves from the drying target region to the untreated region. A pattern of a predetermined shape is formed on the surface of the substrate,
Discharging the drying liquid includes forming a temperature gradient on the surface of the substrate so that the liquid film moves along the shape of the pattern from the region to be dried to the untreated region. Item 14. The method according to Item 14. Further comprising determining a discharge direction of the dry liquid by obtaining a shape of the pattern,
Discharging the drying liquid includes forming a temperature gradient on the surface of the substrate such that the liquid film moves from the drying target region to the unprocessed region along the determined discharging direction. The method according to claim 15.   Discharging the dry liquid includes moving a liquid film of the dry liquid by moving a heating position from one of the peripheral portions of the substrate to the other, and the liquid film of the dry liquid is moved. The method described in the section.   A computer-readable storage medium recording a program for causing an apparatus to execute the method according to claim 13.