TW202218537A - Manufacturing method for display device characterized by using a simple method to prevent an LED chip before bonding from a position shift while bonding an LED chip to a circuit structure - Google Patents
Manufacturing method for display device characterized by using a simple method to prevent an LED chip before bonding from a position shift while bonding an LED chip to a circuit structure Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/165—Containers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H—ELECTRICITY
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Abstract
Description
本發明之一實施形態係關於一種顯示裝置之製造方法。尤其關於一種安裝有LED(Light Emitting Diode:發光二極體)晶片之顯示裝置之製造方法。One embodiment of the present invention relates to a method of manufacturing a display device. In particular, it relates to a manufacturing method of a display device mounted with an LED (Light Emitting Diode) chip.
近年,作為下一代顯示裝置,於各像素安裝有微小之LED晶片之LED顯示器之開發取得進展。通常,LED顯示器具有於構成像素陣列之電路基板上,安裝複數個LED晶片之構造。電路基板於與各像素對應之位置具有用以使LED發光之驅動電路。該等驅動電路分別與各LED晶片電性連接。In recent years, as a next-generation display device, development of LED displays in which tiny LED chips are mounted on each pixel has progressed. Generally, an LED display has a structure in which a plurality of LED chips are mounted on a circuit substrate constituting a pixel array. The circuit substrate has a drive circuit for making the LED emit light at a position corresponding to each pixel. The driving circuits are respectively electrically connected to the LED chips.
上述驅動電路與LED晶片經由連接電極電性連接。具體而言,設置於驅動電路側之電極焊墊與設置於LED晶片側之電極焊墊互相電性連接。例如,於專利文獻1中記載有使用接著層將LED晶片與電路基板接合之技術。於該技術中,LED晶片與電路基板藉由接著層而接著。因此,於LED晶片側之電極焊墊,設置有導電性之突起部。該突起部貫通接著層且與電路基板側之電極焊墊接觸,藉此LED晶片側之電極焊墊與電路基板側之電極焊墊電性連接。 [先前技術文獻] [專利文獻] The above-mentioned driving circuit and the LED chip are electrically connected via connecting electrodes. Specifically, the electrode pads arranged on the driving circuit side and the electrode pads arranged on the LED chip side are electrically connected to each other. For example, Patent Document 1 describes a technique of bonding an LED chip and a circuit board using an adhesive layer. In this technique, the LED chip and the circuit substrate are bonded by an adhesive layer. Therefore, the electrode pads on the LED chip side are provided with conductive protrusions. The protruding portion penetrates through the adhesive layer and is in contact with the electrode pad on the circuit substrate side, whereby the electrode pad on the LED chip side is electrically connected with the electrode pad on the circuit substrate side. [Prior Art Literature] [Patent Literature]
[專利文獻1]美國專利申請公開第2018/0031974號說明書[Patent Document 1] US Patent Application Publication No. 2018/0031974
[發明所欲解決之問題][Problems to be Solved by Invention]
如先前技術所示,藉由接著層將電路基板與LED晶片接著之最終製品係於電路基板與LED晶片之間殘存接著層。由於接著層設置於電路基板之整面,故有構成電路之半導體元件受構成接著層之有機物等所含之鹼成分污染,引起動作不良之虞。As shown in the prior art, the final product in which the circuit substrate and the LED chip are bonded by the bonding layer is the bonding layer remaining between the circuit substrate and the LED chip. Since the adhesive layer is provided on the entire surface of the circuit board, the semiconductor elements constituting the circuit may be contaminated with alkali components contained in the organic substances constituting the adhesive layer, and there is a risk of malfunctioning.
本發明之目的之一在於,藉由簡易之方法一面防止接合前之LED晶片之位置偏移,一面將LED晶片接合於電路基板。又,本發明之另一目的在於,以簡易之方法去除用於防止安裝前之LED晶片之位置偏移之接著層。 [解決問題之技術手段] One of the objects of the present invention is to bond the LED chip to the circuit board by a simple method while preventing the positional displacement of the LED chip before bonding. In addition, another object of the present invention is to remove the adhesive layer for preventing the positional displacement of the LED chip before mounting by a simple method. [Technical means to solve problems]
本發明之一實施形態中之顯示裝置之製造方法包含如下步驟:準備第1基板,該第1基板於各像素具有驅動LED晶片之驅動電路、及連接於上述驅動電路之連接電極;於上述第1基板上配置覆蓋上述連接電極之水溶性黏著層;對上述水溶性黏著層接著第2基板,該第2基板以各連接電極與各LED晶片對向之方式具有複數個LED晶片;藉由加熱處理,將上述各連接電極與上述各LED晶片接合;及藉由水洗處理去除上述水溶性黏著層。A method of manufacturing a display device according to an embodiment of the present invention includes the following steps: preparing a first substrate having a driver circuit for driving an LED chip in each pixel and a connection electrode connected to the driver circuit; 1. A water-soluble adhesive layer covering the connection electrodes is arranged on the substrate; a second substrate is attached to the water-soluble adhesive layer, and the second substrate has a plurality of LED chips in such a way that each connection electrode is opposite to each LED chip; by heating processing, bonding each of the above-mentioned connecting electrodes to each of the above-mentioned LED chips; and removing the above-mentioned water-soluble adhesive layer by washing with water.
以下,對於本發明之實施形態,一面參照圖式等一面進行說明。其中,本發明可於不脫離其主旨之範圍內以各種態樣實施。本發明並非限定於如以下例示之實施形態之記載內容而解釋者。圖式為更明確地說明,而與實際態樣相比,有時模式性地顯示各部之寬度、厚度、形狀等。然而,圖式僅為一例,並非限定本發明之解釋者。Hereinafter, embodiments of the present invention will be described with reference to drawings and the like. However, the present invention can be implemented in various forms without departing from the gist of the present invention. The present invention is not to be construed as being limited to the description contents of the embodiments exemplified below. In the drawings, the width, thickness, shape, etc. of each part may be schematically shown in comparison with the actual state in order to explain more clearly. However, the drawings are only an example, and are not intended to limit the interpreter of the present invention.
於說明本發明之實施形態時,將自基板朝向LED晶片之方向設為「上」,將其反方向設為「下」。其中,所謂「上」或「下」之表現僅說明各要件之上限關係。例如,將LED晶片配置於基板上之表現,亦包含其他構件介置於基板與LED晶片之間之情形。再者,所謂「上」或「下」之表現除俯視時各要件重疊之情形外,亦包含不重疊之情形。In describing the embodiment of the present invention, the direction from the substrate toward the LED chip is referred to as "up", and the opposite direction is referred to as "down". Among them, the so-called "up" or "down" expression only describes the upper limit relationship of each element. For example, the expression of disposing the LED chip on the substrate also includes the case where other components are interposed between the substrate and the LED chip. Furthermore, the expression of the so-called "up" or "down" also includes the case where the elements do not overlap when viewed from above.
於說明本發明之實施形態時,對具備與已說明之要件同樣之功能之要件,有時標註相同符號或相同符號加英文字母等之記號,而省略說明。又,對於某要件,於需區分RGB(Red、Green、Blue:紅、綠、藍)之各色進行說明之情形時,於顯示該要件之符號後標註R、G或B之記號加以區分。但,對於該要件,於無需區分RGB之各色進行說明之情形,僅使用顯示該要件之符號進行說明。When describing the embodiment of the present invention, the elements having the same functions as those described above are sometimes given the same symbols or symbols such as the same symbols and English letters, and the description thereof is omitted. In addition, when it is necessary to distinguish each color of RGB (Red, Green, Blue: red, green, and blue) about a certain requirement for description, the symbol of R, G, or B is added after the symbol showing the requirement to distinguish it. However, with regard to this requirement, when it is not necessary to describe each color of RGB, only the symbol showing the requirement will be used for description.
<第1實施形態>
[顯示裝置之製造方法]
圖1係顯示本發明之一實施形態中之顯示裝置10之製造方法之流程圖。圖2~圖10係顯示本發明之一實施形態中之顯示裝置10之製造方法之剖視圖。以下,使用圖1對顯示裝置10之製造方法進行說明。此時,使用圖2~圖10對各製造製程中之剖面構造進行說明。
<First Embodiment>
[Manufacturing method of display device]
FIG. 1 is a flow chart showing a method of manufacturing the
首先,於圖1之步驟S11中,準備電路基板100,該電路基板100於各像素具有驅動LED晶片之驅動電路102及連接於上述驅動電路102之連接電極103。電路基板100具有複數個與像素相當之區域。如圖2所示,電路基板100於具有絕緣表面之支持基板101上,具有與各像素對應驅動LED晶片之驅動電路102。作為支持基板101,例如可使用玻璃基板、樹脂基板、陶瓷基板或金屬基板。各驅動電路102由複數個薄膜電晶體(TFT:Thin Film Transistors)構成。各連接電極103配置於各像素,分別與驅動電路102電性連接。關於電路基板100之詳細構造,予以後述。First, in step S11 of FIG. 1 , a
於本實施形態中,雖顯示於支持基板101上,使用薄膜形成技術形成各驅動電路102及各連接電極103之例,但並非限於此例者。例如,亦可作為由第三者製成品,取得於支持基板101上形成有驅動電路102之基板(所謂之主動矩陣基板)。該情形時,只要於取得後之基板上形成連接電極103即可。又,本實施形態中,對於例如安裝覆晶型之LED晶片202(參照圖14)之電路基板100進行說明。其中,LED晶片202不限於在與電路基板100對向之面具有2個電極之覆晶型之例。例如LED晶片202亦可為於靠近電路基板100之側具有陽極電極(或陰極電極),且於距電路基板100較遠側具有陰極電極(或陽極電極)之構造。即,LED晶片202亦可為具有於陽極電極與陰極電極之間夾著發光層之構造之面朝上型之LED晶片。In the present embodiment, an example in which each of the
於本實施形態中,雖顯示有於支持基板101上配置有9個連接電極103之例,但本實施形態中為安裝覆晶型之LED晶片202,實際上於各像素形成至少2個連接電極103。覆晶型之LED晶片具有連接於N型半導體之端子電極及連接於P型半導體之端子電極。因此,本實施形態中,因於各像素配置1個LED晶片,故對各像素配置至少2個連接電極103。其中,於使用上述面朝上型之LED晶片作為LED晶片202之情形時,只要於支持基板101上對各像素形成1個連接電極103即可。In this embodiment, an example in which nine
連接電極103例如由具有導電性之金屬材料構成。本實施形態中,使用錫(Sn)作為金屬材料。但,不限於此例,可使用能夠與後述之LED晶片側之端子電極之間形成共晶合金之其他金屬材料。連接電極103之厚度只要設於例如0.2 μm以上且5 μm以下(較佳為1 μm以上且3 μm以下)之範圍內即可。The
接著,於圖1之步驟S12中,如圖3所示,於電路基板100上配置覆蓋連接電極103之水溶性黏著層104。水溶性黏著層104為由具有黏著性之材料構成之水溶性之層。「具有黏著性」意指具有物質容易接著及剝離之特性。即,於使其他物質接觸水溶性黏著層104之情形時,即便施加較弱之力亦可預先將其他物質固定於水溶性黏著層104上。然而,若進而施加較大之力,則可容易地將其他物質自水溶性黏著層104剝離。Next, in step S12 of FIG. 1 , as shown in FIG. 3 , a water-soluble
本實施形態中,作為水溶性黏著層104,使用包含具有助熔劑作用之樹脂或助熔劑之片狀(或薄膜狀)之構件。本實施形態中,顯示使用片狀之構件作為水溶性黏著層104之例,亦可塗佈包含具有助熔劑作用之樹脂或助熔劑之液狀(或膏狀)之材料形成水溶性黏著層104。In the present embodiment, as the water-
作為具有助熔劑作用之水溶性之構件,例如可使用記載於國際公開第2020/116403號之構件。又,作為水溶性黏著層104,不限於具有助熔劑作用之構件,例如亦可使用記載於日本專利特開平5-209160號公報之組合物所構成之構件。再者,作為水溶性黏著層104,例如亦可使用包含聚合抑制劑之水溶性之樹脂層。若將聚合抑制劑混合於樹脂材料,則於使樹脂硬化之情形時,聚合不充分。由於聚合不充分之樹脂層於表面具有黏著性,故可作為本實施形態之水溶性黏著層104使用。As a water-soluble member having a flux action, for example, the member described in International Publication No. 2020/116403 can be used. In addition, the water-
於使用具有助熔劑作用之水溶性之構件作為水溶性黏著層104之情形時,助熔劑成分發揮將形成於連接電極103之表面之氧化膜去除之作用。因此,可使連接電極103之表面活性化,且可獲得與後述之端子電極203穩定之接合。When a water-soluble member having a flux function is used as the water-
水溶性黏著層104之厚度例如只要決定於5 μm以下(較佳為1 μm以上且3 μm以下)之範圍內即可。如下所述,水溶性黏著層104為用以暫時固定(暫時地固定)LED晶片之層,藉由水洗處理消失。因此,為減少水洗處理後殘留之水溶性黏著層104之成分,較理想為不超過5 μm。又,水溶性黏著層104較佳為透明。其原因在於,於後述之連接電極103與LED晶片202之對位時,容易目視配置於電路基板100之對位用之標記。The thickness of the water-
另,圖3中,雖顯示有水溶性黏著層104僅與複數個連接電極103之上表面相接之態樣,但此種態様僅為一例。例如,於各連接電極103之間隔較寬之情形、或水溶性黏著層104之膜厚較薄之情形,亦可有片狀之水溶性黏著層104或於各連接電極103之間向支持基板101側撓曲,或與支持基板101(或驅動電路102)相接之情形。進而,於複數個連接電極103上配置水溶性黏著層104時,亦可藉由對水溶性黏著層104施加壓力,以沿各連接電極103之形狀之方式使水溶性黏著層104變化。3, although the water-
接著,於圖1之步驟S13之前,準備設置有複數個LED晶片202R之承載基板191(參照圖6)。Next, before step S13 in FIG. 1 , a carrier substrate 191 (refer to FIG. 6 ) on which a plurality of
首先,如圖4所示,於承載基板181上配置具有發紅色光之複數個LED晶片202R之元件基板200。於本實施形態中,作為承載基板181,使用由矽或丙烯酸構成之片狀構件。承載基板181具有黏著性。承載基板181之黏著力可藉由雷射光之照射等調整。作為此種承載基板181,可使用周知之承載基板。First, as shown in FIG. 4 , the
圖4所示之元件基板200為於半導體基板201設置有發紅色光之複數個LED晶片202R之基板。本實施形態中,雖使用藍寶石基板作為半導體基板201,但並非限於此例者。LED晶片202R由包含成長於藍寶石基板上之氮化鎵之半導體材料構成。構成半導體基板201之材料與構成LED晶片202R之材料之組合只要根據發光顏色適當決定即可。The
各LED晶片202R包含端子電極203R。端子電極203R作為用以將LED晶片202R與上述複數個連接電極103電性連接之端子發揮功能。本實施形態中,雖於各LED晶片202R圖示有1個端子電極203R,但由於本實施形態中各LED晶片202R為覆晶型LED,故實際上相對於1個LED晶片202R設置有2個端子電極203R。本實施形態中,如圖4所示,各端子電極203R接著於承載基板181之表面。Each
對承載基板181接著元件基板200後,藉由未圖示之雷射光之照射而將半導體基板201與各LED晶片202R分離。該製程稱為雷射剝蝕製程。具體而言,藉由照射雷射光,使半導體基板201與各LED晶片202R之邊界部分改質,而將各LED晶片202R自半導體基板201分離。該情形時,作為雷射光,選定不被半導體基板201吸收而被LED晶片202R吸收之雷射光。雷射光例如可使用紫外光,但只要根據構成半導體基板201及LED晶片202R之材料選擇適當波長之雷射光即可。After the
藉由上述製程將半導體基板201與各LED晶片202R分離後,接著如圖5所示,於承載基板191上接著具有複數個LED晶片202R之承載基板181。於本實施形態中,作為承載基板191,使用由矽材料構成之片狀構件。於對承載基板191接著各LED晶片202R之前,較佳先藉由照射雷射光等預先減弱承載基板181之黏著力。藉由預先減弱承載基板181之黏著力,可使承載基板181容易與各LED晶片202R分離。After the
對承載基板191接著各LED晶片202R後,藉由剝離承載基板181而去除承載基板181。藉由去除承載基板181,可準備設置有複數個LED晶片202R之承載基板191。After each
接著,於圖1之步驟S13中,相對於水溶性黏著層104,以各連接電極103與各LED晶片202R對向之方式,接著具有複數個LED晶片202R之承載基板191。具體而言,如圖6所示,以各連接電極103與各端子電極203R介隔水溶性黏著層104而對向之方式,對水溶性黏著層104接著各LED晶片202R。藉此,可於連接電極103上暫時固定各LED晶片202R。Next, in step S13 of FIG. 1 , with respect to the water-
本實施形態中,為使說明簡略,僅圖示有連接電極103及端子電極203R各1個,但實際上,對於1個LED晶片202R設置有連接電極103及端子電極203R各2個。然而,若使用上述面朝上型之LED晶片作為LED晶片202R時,亦可為對各像素設置有1個連接電極103之構造。In this embodiment, to simplify the description, only one
顯示裝置越高精細,則設置於電路基板100之像素數越增加,各像素之尺寸越小。若各像素之尺寸變小,則配置於各像素之LED晶片202R之尺寸亦變小,因而LED晶片202R之搬送方法亦變難。因此,於將LED晶片202R直接載置於連接電極103上之情形,有因輕微振動導致LED晶片202R之位置與連接電極103之位置變得不一致之虞。The higher the fineness of the display device, the more the number of pixels disposed on the
本實施形態中,為消除此種不良情況,於連接電極103上設置水溶性黏著層104。即,於圖6所示之例中,藉由將LED晶片202R之端子電極203R接著於水溶性黏著層104,可防止因振動所致之LED晶片202R之位置偏移。該情形時,無需牢固地接著,只要可確保能夠暫時固定之程度之接著力即可。In this embodiment, in order to eliminate such inconvenience, a water-
接著,於圖1之步驟S14中,如圖7所示,藉由照射雷射光40進行加熱處理,而將連接電極103與LED晶片202R接合。該製程為藉由雷射光40之照射而使連接電極103與端子電極203R熔融接合之製程。Next, in step S14 of FIG. 1 , as shown in FIG. 7 , the
作為雷射光40,選定未被構成承載基板191及LED晶片202R之半導體材料吸收,而被連接電極103或端子電極203R吸收之雷射光。於本實施形態中,例如作為雷射光40,可使用紅外光或近紅外光。作為雷射光40之光源,可使用YAG(Yttrium Aluminum Garnate:釔鋁石榴石)雷射或YVO
4(Yttrium Vanadate:釩酸釔)雷射等固體雷射。其中,雷射光40可根據構成LED晶片202R之材料等,選擇適當波長之雷射光。例如,於使用吸收較紅外光更短波長之雷射光之半導體材料之情形時,亦可使用綠光雷射(綠色光)。
As the
藉由雷射光40之照射,而於連接電極103與端子電極203R之間形成由共晶合金構成之合金層105。如上所述,於本實施形態中,連接電極103由錫(Sn)構成。另一方面,端子電極203R由金(Au)構成。即,於本實施形態中,作為合金層105,形成由Sn-Au共晶合金構成之層。其中,作為連接電極103及端子電極203R,只要為可互相形成共晶合金之材料,亦可使用其他金屬材料。例如,連接電極103及端子電極203R亦可共同由錫(Sn)構成。The
藉由上述雷射光40之照射,存在於連接電極103與端子電極203R之間之水溶性黏著層104消失。此時,水溶性黏著層104之成分有時作為碳原子分散於共晶合金中。即,於上述合金層105之內部、合金層105之周圍、或連接電極103之周圍,碳有時以較連接電極103及端子電極203R更高之濃度存在。例如,於連接電極103之面積較端子電極203R之面積更大之情形,於俯視時形成有合金層105之周圍之區域,露出連接電極103之表面。該情形時,於露出之連接電極103之表面,因水溶性黏著層104之消失而產生之碳有時以較端子電極203R更高之濃度存在。該情形時,露出之連接電極103之表面之碳濃度較連接電極103之背面(支持基板101側之面)中之碳濃度更高。The water-
藉由於連接電極103與端子電極203R之間形成由共晶合金構成之合金層105,連接電極103與端子電極203R介隔合金層105而接合。其結果,可對連接電極103牢固地安裝LED晶片202R。將各連接電極103與各LED晶片202R之端子電極203R接合後,去除承載基板191獲得圖8所示之狀態。經由以上製程,如圖8所示,可於電路基板100上安裝發紅色光之LED晶片202R。By forming the
獲得圖8所示之狀態後,重複圖1所示之步驟S13及步驟S14,依序將發綠色光之LED晶片202G及發藍色光之LED晶片202B安裝於電路基板100上。經由該等製程,可獲得圖9所示之狀態。於圖9所示之狀態中,於電路基板100上安裝有發紅色光之LED晶片202R、發綠色光之LED晶片202G、及發藍色光之LED晶片202B。After obtaining the state shown in FIG. 8 , steps S13 and S14 shown in FIG. 1 are repeated to sequentially mount the green-emitting
接著,於圖1之步驟S15中,藉由進行水洗處理而去除水溶性黏著層104。藉由該製程,統一去除各LED晶片202之間所殘留之水溶性黏著層104。因此,如圖10所示,於安裝有各LED晶片202之電路基板100上,未殘留水溶性黏著層104。即,根據本實施形態,可藉由簡易之方法,防止接合前之LED晶片之位置偏移。又,根據本實施形態,可以簡易之方法去除用以防止位置偏移之接著層,且可防止構成電路之半導體元件因鹼成分等被污染。Next, in step S15 of FIG. 1 , the water-
[顯示裝置之構成]
使用圖11~圖14,對本發明之一實施形態中之顯示裝置10之構成進行說明。
[Configuration of Display Device]
The configuration of the
圖11係顯示本發明之一實施形態中之顯示裝置10之概略構成之俯視圖。如圖11所示,顯示裝置10具有電路基板100、可撓性印刷電路基板160(FPC(Flexible Printed Circuit:可撓性印刷電路)160)、及IC(Integrated Circuit:積體電路)晶片170。顯示裝置10劃分為顯示區域112、周邊區域114、及端子區域116。FIG. 11 is a plan view showing a schematic configuration of a
顯示區域112為於列方向(D1方向)及行方向(D2方向)上配置有包含LED晶片202之複數個像素110之區域。具體而言,於本實施形態中,配置包含LED晶片202R之像素110R、包含LED晶片202G之像素110G、及包含LED晶片202B之像素110B。顯示區域112作為顯示與影像信號相應之圖像之區域發揮功能。The
周邊區域114為顯示區域112周圍之區域。周邊區域114為設置有用以控制設置於各像素110之像素電路(圖14所示之像素電路120)之驅動器電路(圖14所示之資料驅動器電路130及閘極驅動器電路140)之區域。The
端子區域116為匯集有連接於上述驅動器電路之複數根配線之區域。可撓性印刷電路基板160於端子區域116中與複數根配線電性連接。自外部裝置(未圖示)輸出之影像信號(資料信號)或控制信號經由設置於可撓性印刷電路基板160之配線,輸入至IC晶片170。IC晶片170或對影像信號進行各種信號處理,或產生顯示控制所需之控制信號。自IC晶片170輸出之影像信號及控制信號,經由可撓性印刷電路基板160輸入至顯示裝置10。The
[顯示裝置10之電路構成]
圖12係顯示本發明之一實施形態之顯示裝置10之電路構成之方塊圖。如圖12所示,於顯示區域112,與各像素110對應,設置有像素電路120。於本實施形態中,與像素110R、像素110G及像素110B對應,分別設置有像素電路120R、像素電路120G及像素電路120B。即,於顯示區域112中,複數個像素電路120配置於列方向(D1方向)及行方向(D2方向)。
[Circuit Configuration of Display Device 10]
FIG. 12 is a block diagram showing the circuit configuration of the
圖13係顯示本發明之一實施形態之顯示裝置10之像素電路120之構成之電路圖。像素電路120配置於資料線121、閘極線122、陽極電源線123及陰極電源線124所包圍之區域。本實施形態之像素電路120包含選擇電晶體126、驅動電晶體127、保持電容128、及LED129。LED129與圖11所示之LED晶片202對應。像素電路120中LED129以外之電路要件與設置於電路基板100之驅動電路102相當。即,以相對於電路基板100安裝有LED晶片202之狀態完成像素電路120。FIG. 13 is a circuit diagram showing the configuration of the
如圖13所示,選擇電晶體126之源極電極、閘極電極及汲極電極各自連接於資料線121、閘極線122、及驅動電晶體127之閘極電極。驅動電晶體127之源極電極、閘極電極及汲極電極分別連接於陽極電源線123、選擇電晶體126之汲極電極及LED129。保持電容128連接於驅動電晶體127之閘極電極與汲極電極之間。即,保持電容128連接於選擇電晶體126之汲極電極。LED129之陽極及陰極分別連接於驅動電晶體127之汲極電極及陰極電源線124。As shown in FIG. 13 , the source electrode, gate electrode and drain electrode of the
對資料線121供給決定LED129之發光強度之灰階信號。對閘極線122供給用以選擇寫入灰階信號之選擇電晶體126之閘極信號。當選擇電晶體126成為ON(開啟)狀態時,灰階信號累積於保持電容128。其後,當驅動電晶體127成為ON狀態時,與灰階信號相應之驅動電流流動於驅動電晶體127。若自驅動電晶體127輸出之驅動電流輸入至LED129,則LED129以與灰階信號相應之發光強度發光。A grayscale signal for determining the luminous intensity of the
再次參照圖12,於相對於顯示區域112沿行方向(D2方向)相鄰之位置,配置資料驅動器電路130。又,於相對於顯示區域112於列方向(D1方向)相鄰之位置,配置閘極驅動器電路140。於本實施形態中,於顯示區域112之兩側設置有閘極驅動器電路140,但亦可僅設置於任一側。Referring to FIG. 12 again, the
資料驅動器電路130及閘極驅動器電路140之任一者皆配置於周邊區域114。但,配置資料驅動器電路130之區域不限於周邊區域114。例如,資料驅動器電路130亦可配置於可撓性印刷電路基板160。Either the
圖13所示之資料線121自資料驅動器電路130於D2方向延伸,連接於各像素電路120中之選擇電晶體126之源極電極。閘極線122自閘極驅動器電路140於D1方向延伸,連接於各像素電路120中之選擇電晶體126之閘極電極。The
於端子區域116配置有端子部150。端子部150經由連接配線151與資料驅動器電路130連接。同樣,端子部150經由連接配線152與閘極驅動器電路140連接。再者,端子部150與可撓性印刷電路基板160連接。A
[顯示裝置10之剖面構造]
圖14係顯示本發明之一實施形態之顯示裝置10之像素110之構成之剖視圖。像素110具有設置於絶縁基板11上之驅動電晶體127。作為絕緣基板11,可使用將絕緣層設置於玻璃基板或樹脂基板上之基板。
[Cross-sectional structure of the display device 10 ]
FIG. 14 is a cross-sectional view showing the structure of the
驅動電晶體127包含半導體層12、閘極絕緣層13及閘極電極14。於半導體層12,介隔絕緣層15連接源極電極16及汲極電極17。雖省略圖示,但閘極電極14連接於圖13所示之選擇電晶體126之汲極電極。The driving
於與源極電極16及汲極電極17相同之層,設置有配線18。配線18作為圖13所示之陽極電源線123發揮功能。因此,源極電極16及配線18藉由設置於平坦化層19上之連接配線20電性連接。平坦化層19為使用聚醯亞胺、丙烯酸等之樹脂材料之透明之樹脂層。連接配線20為使用ITO等金屬氧化物材料之透明導電層。但,不限於此例,亦可使用其他金屬材料作為連接配線20。The
於連接配線20上,設置由氮化矽等構成之絕緣層21。於絕緣層21上,設置陽極電極22及陰極電極23。於本實施形態中,陽極電極22及陰極電極23為包含遮光性之金屬材料之電極。陽極電極22經由設置於平坦化層19及絕緣層21之開口連接於汲極電極17。On the
陽極電極22及陰極電極23分別經由平坦化層24連接於安裝焊墊25a及25b。安裝焊墊25a及25b例如由鉭、鎢等金屬材料構成。於安裝焊墊25a及25b上分別設置連接電極103a及103b。連接電極103a及103b分別與圖1所示之連接電極103對應。即,本實施形態中,配置由錫(Sn)構成之電極作為連接電極103a及103b。The
於連接電極103a及103b,分別接合有LED晶片202之端子電極203a及203b。如上所述,於本實施形態中,端子電極203a及203b為由金(Au)構成之電極。如使用圖7說明,於連接電極103a與端子電極203a之間存在未圖示之合金層(圖7所示之合金層105)。此處著眼於連接電極103a及端子電極203a進行說明,但關於連接電極103b及端子電極203b亦同樣。
LED晶片202於圖13所示之電路圖中,相當於LED129。即,LED晶片202之端子電極203a與連接於驅動電晶體127之汲極電極17連接之陽極電極22。LED晶片202之端子電極203b連接於陰極電極23。陰極電極23與圖13所示之陰極電源線124電性連接。The
具有以上構造之本實施形態之顯示裝置10因藉由雷射照射所致之熔融接合,牢固地安裝LED晶片202,因而具有所謂對衝擊等之耐性較高之優點。The
<第2實施形態>
於本實施形態中,對以與第1實施形態不同之方法製造顯示裝置10之方法進行說明。具體而言,本實施形態之顯示裝置10之製造方法係於各LED晶片202與各連接電極103之接合時,使用回流焊處理。於本實施形態中,對與第1實施形態不同之部分進行說明。關於本實施形態之說明所使用之圖式,對與第1實施形態相同之構成,標註相同符號而省略詳細之說明。
<Second Embodiment>
In the present embodiment, a method of manufacturing the
圖15及圖16係顯示本發明之第2實施形態中之顯示裝置之製造方法之剖視圖。15 and 16 are cross-sectional views showing a method of manufacturing a display device in a second embodiment of the present invention.
首先,藉由與第1實施形態同樣之製程,準備電路基板100,其後準備設置有複數個LED晶片202R之承載基板191。於本實施形態中,對各LED晶片202R之端子電極203R預先設置接合構件204R。接合構件204R為例如由焊錫等低熔點金屬構成之構件。First, the
本實施形態中,如圖15所示,使接合構件204R相對於水溶性黏著層104接著。即,構成為各連接電極103與各端子電極203R介隔水溶性黏著層104及接合構件204R而對向。藉此,可於連接電極103上暫時固定各LED晶片202R。In the present embodiment, as shown in FIG. 15 , the
接著,如圖16所示,藉由進行加熱處理,將連接電極103與LED晶片202R接合。該製程為藉由熱退火使接合構件204R熔融,且經由接合構件204R將連接電極103與端子電極203R接合之回流焊處理。藉此,可對連接電極103牢固地安裝LED晶片202R。Next, as shown in FIG. 16, the
如本實施形態所示若使用回流焊處理將連接電極103與端子電極203R接合,水溶性黏著層104較理想為包含具有助熔劑作用之材料。助熔劑成分具有去除金屬表面之氧化物之效果。因此,藉由於連接電極103與接合構件204R之間具備具有助熔劑作用之水溶性黏著層104,而可於回流焊處理時,去除連接電極103或端子電極203R之表面上形成之氧化物。As shown in the present embodiment, when the
於圖16所示之回流焊處理之後,與第1實施形態同樣地,重複圖15及圖16所示之處理,依序安裝發綠色光之LED晶片202G及發藍色光之LED晶片202B。安裝各LED晶片202R、202G及202B後,最後進行水洗處理,而去除水溶性黏著層104。藉由該製程,統一去除殘留於各LED晶片202之間之水溶性黏著層104。After the reflow process shown in FIG. 16, the process shown in FIG. 15 and FIG. 16 is repeated similarly to 1st Embodiment, and the
<第3實施形態>
於本實施形態中,對具有與第1實施形態不同之構造之像素的顯示裝置10進行說明。具體而言,本實施形態之顯示裝置10於像素110a中,於LED晶片202之正下方形成有開口部30。於本實施形態中,對與第1實施形態不同之部分進行說明。關於本實施形態之說明中所使用之圖式,對與第1實施形態相同之構成標註相同符號而省略詳細說明。
<Third Embodiment>
In this embodiment, a
圖17係顯示本發明之第3實施形態之顯示裝置之像素110a之構成之剖視圖。如圖17所示,本實施形態之像素110a於LED晶片202之下方,於平坦化層24a形成有開口部30。平坦化層24a之開口部30係側面及底面由絕緣層26覆蓋。作為絕緣層26,例如可使用由氮化矽等構成之薄膜。絕緣層26作為防止水分等侵入電路內部之鈍化層發揮功能。17 is a cross-sectional view showing the structure of a
平坦化層24a之開口部30可同時形成用以連接陽極電極22與安裝焊墊25a之接觸孔31a、及用以連接陰極電極23與安裝焊墊25b之接觸孔31b。於接觸孔31a及31b之內側中,亦於絕緣層26形成開口部32a及32b。開口部32a係為電性連接陽極電極22與安裝焊墊25a而設置。開口部32b係為電性連接陰極電極23與安裝焊墊25b而設置。但,不限於此例,開口部32a或32b亦可設置為包含接觸孔31a或31b之整體。The
另一方面,如圖17所示,開口部30之內側係絕緣層26未被蝕刻而殘留。即,開口部30之內側成為藉由以絕緣層26覆蓋側面及底面,而防止水分等之侵入之構造。On the other hand, as shown in FIG. 17 , the insulating
如以上所示,本實施形態之像素110a於LED晶片202之下方,即連接電極103a與連接電極103b之間具有開口部30。藉此,於LED晶片202之正下方,形成較第1實施形態之顯示裝置10中之像素110更大之空間。因此,於去除安裝LED晶片202時所使用之水溶性黏著層104時,水容易到達LED晶片202之下方,可有效率地去除水溶性黏著層104。藉此,可防止所謂水溶性黏著層104殘留於LED晶片202與電路基板100之間之不良情況。As described above, the
<第4實施形態>
於本實施形態中,對以與第1實施形態不同之方法製造顯示裝置10之方法進行說明。具體而言,本實施形態之顯示裝置10之製造方法使用由水溶性黏著片構成之承載基板196,取代承載基板191。於本實施形態中,對與第1實施形態不同之部分進行說明。關於本實施形態之說明中所使用之圖式,對於與第1實施形態相同之構成,標註相同符號而省略詳細之說明。
<4th Embodiment>
In the present embodiment, a method of manufacturing the
圖18~圖20係顯示本發明之第2實施形態中之顯示裝置10之製造方法之剖視圖。18 to 20 are cross-sectional views showing a method of manufacturing the
首先,藉由與第1實施形態同樣之製程,準備電路基板100。於第1實施形態中,於電路基板100上配置有覆蓋各連接電極103之水溶性黏著層104,於本實施形態中亦可不配置水溶性黏著層104。但,不限於此例,亦可與第1實施形態同樣,於各連接電極103上配置水溶性黏著層104。First, the
接著,藉由於第1實施形態中使用圖4說明之製程,準備設置有複數個LED晶片202R之承載基板181。於準備承載基板181後,接著如圖18所示般,於承載基板196上接著具有複數個LED晶片202R之承載基板181。於本實施形態中,作為承載基板196,使用水溶性黏著片(亦稱為水溶性黏著薄膜)。水溶性黏著片為將與第1實施形態中說明之水溶性黏著層104相同之材料加工成片狀之構件。即,由水溶性黏著片構成之承載基板196溶於水,且具有黏著性。Next, by the process described using FIG. 4 in the first embodiment, the
於將各LED晶片202R接著於承載基板196後,藉由剝離承載基板181而去除承載基板181。藉由去除承載基板181,可準備設置有複數個LED晶片202R之承載基板196。After each
接著,如圖19所示,以各連接電極103與各LED晶片202R對向之方式,於電路基板100上配置承載基板196。具體而言,以各連接電極103與各端子電極203R對向之方式,將承載基板196配置於電路基板100上。Next, as shown in FIG. 19, the
此時,如圖20所示,對電路基板100之端部接著承載基板196之端部196a。藉此,可固定承載基板196之位置,且於連接電極103上暫時固定各LED晶片202R。但,不限於此例,亦可接著承載基板196之端部196a以外之部分。例如,於各連接電極103之間隔足夠寬之情形,亦可於各連接電極103之間之空間中將承載基板196與電路基板100接著。At this time, as shown in FIG. 20 , the
對電路基板100接著承載基板196後,與於第1實施形態中使用圖7所說明之製程同樣,照射雷射光將連接電極103與端子電極203R熔融接合。藉此,可於電路基板100上安裝複數個LED晶片202R。After the
各LED晶片202R之安裝結束後,藉由水洗處理,去除由水溶性黏著片構成之承載基板196。如此,於本實施形態中,由於將水溶性之承載基板196用於移送複數個LED晶片202R,故可以水洗處理去除承載基板196。因此,於去除承載基板196時,未對電路基板100及各LED晶片202R賦予無用之壓力。After the mounting of each
經由如以上般之製程於電路基板100上安裝複數個LED晶片202R後,與第1實施形態同樣地重複使用圖18~圖20所說明之處理,依序安裝發綠色光之LED晶片202G及發藍色光之LED晶片202B。於本實施形態中,因於將LED晶片202G及LED晶片202B安裝於電路基板100上時亦使用水溶性黏著片作為承載基板196,故可藉由水洗處理,容易地將LED晶片202G及LED晶片202B與承載基板196分離。After a plurality of
(變化例)
於本實施形態中,雖顯示使用單體之水溶性黏著片作為承載基板196,但並非限於此例者。例如,亦可使用積層有水溶性黏著片與樹脂片之基板,作為承載基板196。該情形時,由於可僅使承載基板196之單面具有黏著性,故有於承載基板196接著各LED晶片202後,承載基板196之操作變容易之優點。
(Variation example)
In this embodiment, although the water-soluble adhesive sheet of a monomer is shown as the
本變化例之情形時,於電路基板100上安裝各LED晶片202後,若進行水洗處理則水溶性黏著片之部分溶解,因而樹脂片以剝蝕之方式去除。因此,本變化例之承載基板196亦可藉由水洗處理而容易地去除。In the case of this modification, after the
作為本發明之實施形態,上述之各實施形態只要不互相矛盾,皆可適當組合而實施。基於各實施形態,熟知本技藝者適當進行構成要件之追加、削減或設計變更者、或進行步驟之追加、省略或條件變更者,只要具備本發明之主旨,則皆包含於本發明之範圍內。As an embodiment of the present invention, each of the above-described embodiments can be appropriately combined and implemented as long as they do not contradict each other. Based on each embodiment, those skilled in the art can appropriately add, reduce, or change components, or perform additions, omissions, or changes in conditions, as long as the gist of the present invention is satisfied, all within the scope of the present invention. .
又,應理解根據本說明書之記載而明確者、或由熟知本技藝者可容易預測者,即便為與藉由上述之各實施形態之態樣而獲得之作用效果不同之其他作用效果,亦當然為可藉由本發明獲得者。In addition, it should be understood that what is clear from the description of this specification, or can be easily predicted by those skilled in the art, even if there are other functions and effects different from the functions and effects obtained by the aspects of the above-mentioned embodiments, it is also a matter of course. be obtainable by the present invention.
10:顯示裝置 11:絶縁基板 12:半導體層 13:閘極絕緣層 14:閘極電極 15:絕緣層 16:源極電極 17:汲極電極 18:配線 19:平坦化層 20:連接配線 21:絕緣層 22:陽極電極 23:陰極電極 24:平坦化層 24a:平坦化層 25a,25b:安裝焊墊 26:絕緣層 30:開口部 31a,31b:接觸孔 32a,32b:開口部 40:雷射光 100:電路基板 101:支持基板 102:驅動電路 103,103a,103b:連接電極 104:水溶性黏著層 105:合金層 110,110R,100G,110B:像素 110a:像素 112:顯示區域 114:周邊區域 116:端子區域 120,120R,120G,120B:像素電路 121:資料線 122:閘極線 123:陽極電源線 124:陰極電源線 126:選擇電晶體 127:驅動電晶體 128:保持電容 129:LED 130:資料驅動器電路 140:閘極驅動器電路 150:端子部 151,152:連接配線 160:可撓性印刷電路基板 170:IC晶片 181,191,196:承載基板 196a:端部 200:元件基板 201:半導體基板 202,202R,202G,202B:LED晶片 203,203a,203b,203R,203G,203B:端子電極 204R:接合構件 D1:方向 D2:方向 S11~S15:步驟 10: Display device 11: Insulation substrate 12: Semiconductor layer 13: Gate insulating layer 14: Gate electrode 15: Insulation layer 16: Source electrode 17: Drain electrode 18: Wiring 19: Flattening layer 20: Connection wiring 21: Insulation layer 22: Anode electrode 23: Cathode electrode 24: Flattening layer 24a: Planarization layer 25a, 25b: Mounting pads 26: Insulation layer 30: Opening 31a, 31b: Contact holes 32a, 32b: Opening 40: Laser light 100: circuit substrate 101: Support substrate 102: Drive circuit 103, 103a, 103b: Connection electrodes 104: Water-soluble adhesive layer 105: Alloy layer 110, 110R, 100G, 110B: pixels 110a: Pixels 112: Display area 114: Surrounding area 116: Terminal area 120, 120R, 120G, 120B: pixel circuit 121: data line 122: gate line 123: Anode power cord 124: Cathode power cord 126: select transistor 127: drive transistor 128: Holding Capacitor 129: LED 130: Data driver circuit 140: Gate driver circuit 150: Terminal part 151, 152: Connection wiring 160: Flexible Printed Circuit Board 170: IC chip 181, 191, 196: Carrier Substrates 196a: Ends 200: Component substrate 201: Semiconductor substrate 202, 202R, 202G, 202B: LED chips 203, 203a, 203b, 203R, 203G, 203B: Terminal electrodes 204R: Joining Components D1: Direction D2: Direction S11~S15: Steps
圖1係顯示本發明之第1實施形態中之顯示裝置之製造方法之流程圖。 圖2係顯示本發明之第1實施形態中之顯示裝置之製造方法之剖視圖。 圖3係顯示本發明之第1實施形態中之顯示裝置之製造方法之剖視圖。 圖4係顯示本發明之第1實施形態中之顯示裝置之製造方法之剖視圖。 圖5係顯示本發明之第1實施形態中之顯示裝置之製造方法之剖視圖。 圖6係顯示本發明之第1實施形態中之顯示裝置之製造方法之剖視圖。 圖7係顯示本發明之第1實施形態中之顯示裝置之製造方法之剖視圖。 圖8係顯示本發明之第1實施形態中之顯示裝置之製造方法之剖視圖。 圖9係顯示本發明之第1實施形態中之顯示裝置之製造方法之剖視圖。 圖10係顯示本發明之第1實施形態中之顯示裝置之製造方法之剖視圖。 圖11係顯示本發明之第1實施形態中之顯示裝置之概略之構成之俯視圖。 圖12係顯示本發明之第1實施形態之顯示裝置之電路構成之方塊圖。 圖13係顯示本發明之第1實施形態之顯示裝置之像素電路之構成之電路圖。 圖14係顯示本發明之第1實施形態之顯示裝置之像素之構成之剖視圖。 圖15係顯示本發明之第2實施形態中之顯示裝置之製造方法之剖視圖。 圖16係顯示本發明之第2實施形態中之顯示裝置之製造方法之剖視圖。 圖17係顯示本發明之第3實施形態之顯示裝置之像素之構成之剖視圖。 圖18係顯示本發明之第4實施形態中之顯示裝置之製造方法之剖視圖。 圖19係顯示本發明之第4實施形態中之顯示裝置之製造方法之剖視圖。 圖20係顯示本發明之第4實施形態中之顯示裝置之製造方法之剖視圖。 FIG. 1 is a flowchart showing a method of manufacturing a display device in a first embodiment of the present invention. FIG. 2 is a cross-sectional view showing a method of manufacturing the display device in the first embodiment of the present invention. 3 is a cross-sectional view showing a method of manufacturing the display device according to the first embodiment of the present invention. 4 is a cross-sectional view showing a method of manufacturing the display device in the first embodiment of the present invention. 5 is a cross-sectional view showing a method of manufacturing the display device in the first embodiment of the present invention. FIG. 6 is a cross-sectional view showing a method of manufacturing the display device according to the first embodiment of the present invention. FIG. 7 is a cross-sectional view showing a method of manufacturing the display device according to the first embodiment of the present invention. 8 is a cross-sectional view showing a method of manufacturing the display device in the first embodiment of the present invention. 9 is a cross-sectional view showing a method of manufacturing the display device in the first embodiment of the present invention. 10 is a cross-sectional view showing a method of manufacturing the display device in the first embodiment of the present invention. FIG. 11 is a plan view showing a schematic configuration of the display device in the first embodiment of the present invention. FIG. 12 is a block diagram showing the circuit configuration of the display device according to the first embodiment of the present invention. FIG. 13 is a circuit diagram showing the configuration of the pixel circuit of the display device according to the first embodiment of the present invention. 14 is a cross-sectional view showing the structure of a pixel of the display device according to the first embodiment of the present invention. 15 is a cross-sectional view showing a method of manufacturing a display device in a second embodiment of the present invention. 16 is a cross-sectional view showing a method of manufacturing a display device in a second embodiment of the present invention. 17 is a cross-sectional view showing the structure of a pixel of a display device according to a third embodiment of the present invention. 18 is a cross-sectional view showing a method of manufacturing a display device in a fourth embodiment of the present invention. 19 is a cross-sectional view showing a method of manufacturing a display device in a fourth embodiment of the present invention. 20 is a cross-sectional view showing a method of manufacturing a display device in a fourth embodiment of the present invention.
S11~S15:步驟 S11~S15: Steps
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US6713318B2 (en) | 2001-03-28 | 2004-03-30 | Intel Corporation | Flip chip interconnection using no-clean flux |
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