TW202218013A - Substrate processing apparatus - Google Patents

Abstract

This substrate processing device comprises: a substrate holding part; a processing liquid nozzle (4); and a first plasma generation unit (5). While holding a substrate (W), the substrate holding part rotates the substrate (W) around a rotational axis (Q1) passing through the center section of the substrate (W). The processing liquid nozzle (4) discharges a processing liquid toward a principal surface of the substrate W held by the substrate holding unit. The first plasma generation unit (5) is disposed at a position adjacent to the processing liquid nozzle (4) in plan view. The first plasma generation unit (5) includes: a first electrode group (7) that has a plurality of first electrodes (71) disposed side by side and mutually spaced apart in plan view; and a first unit body (6) that forms a first gas flow channel (60) for causing a gas to flow, from a vertically upward direction, toward the first electrode group (7). The first plasma generation unit (5) supplies the gas that has passed through the first electrode group (7) to the principal surface of the substrate (W) held by the substrate holding part.

Description

Substrate processing equipment

The present invention relates to a substrate processing apparatus.

Conventionally, a substrate processing apparatus for removing a resist formed on the main surface of a substrate has been proposed (for example, Patent Document 1). In Patent Document 1, a mixed solution of sulfuric acid and hydrogen peroxide water is supplied to the main surface of the substrate. Sulfuric acid and hydrogen peroxide water are mixed, whereby sulfuric acid and hydrogen peroxide water react to generate Caro's acid. Carbohydrates can efficiently remove resists from substrates.

However, in such a treatment, it is necessary to continuously supply sulfuric acid and hydrogen peroxide water, and the consumption of sulfuric acid and hydrogen peroxide water is large. In order to reduce the burden on the environment, a reduction in the amount of sulfuric acid used and a reduction in the consumption of chemical solutions are required. In order to reduce the consumption of chemical solution, sulfuric acid was recovered and reused in the past. However, since the concentration of sulfuric acid is reduced by mixing sulfuric acid with hydrogen peroxide water, it is difficult to recover sulfuric acid at a high concentration. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2020-88208.

[The problem to be solved by the invention]

Therefore, it is considered that active species such as oxygen radicals are generated by atmospheric pressure plasma, and the active species are allowed to act on sulfuric acid, thereby generating carloic acid. Thereby, the resist can be removed without using peroxide water.

As a more specific configuration of the substrate processing apparatus, it is considered to provide a nozzle for supplying the processing liquid to the main surface of the substrate, and a unit for supplying the active species to the main surface of the substrate. Thereby, active species can be supplied to the processing liquid that has been applied to the main surface of the substrate. Therefore, the active species acts on the processing liquid on the main surface of the substrate, so that the processing capability of the processing liquid can be improved. Thereby, the main surface of a board|substrate can be processed efficiently with high processing capability.

Even in the treatment using such a treatment liquid and active species, it is desired to treat the substrate more uniformly.

Therefore, an object of the present invention is to provide a technique that can process the substrate more uniformly. [means to solve the problem]

The substrate processing apparatus according to the first aspect includes: a substrate holding part that rotates the substrate around a rotation axis passing through a center part of the substrate while holding the substrate; and a processing liquid nozzle that faces the substrate held by the substrate holding part The main surface of the substrate ejects the processing liquid; and the first plasma generating unit is arranged at a position adjacent to the processing liquid nozzle when viewed from above along the rotation axis; the first plasma generating unit comprises: a first The electrode group is provided with a plurality of first electrodes, and the plurality of the first electrodes are arranged at intervals from each other when viewed from above; and the first unit body forms a first gas flow path, and the first gas flow path is The gas flows toward the first electrode group from vertically above, and the first plasma generating unit supplies the gas that has passed through the first electrode group to the main surface of the substrate held by the substrate holding portion.

The substrate processing apparatus of the second aspect is the substrate processing apparatus described in the first aspect, wherein the first plasma generating unit further includes: a dielectric partition member disposed between the plurality of the first electrodes between.

The substrate processing apparatus of a third aspect is the substrate processing apparatus described in the first aspect or the second aspect, wherein the first plasma generating unit is directed from the central portion of the substrate to the substrate including the peripheral portion. The area above the radius is supplied with the aforementioned gas.

The substrate processing apparatus of the fourth aspect is the substrate processing apparatus described in any one of the first aspect to the third aspect, wherein the first unit main system includes: a flow path partition, when viewed from above The first gas flow path is divided into a plurality of gas division flow paths.

A substrate processing apparatus according to a fifth aspect is the substrate processing apparatus according to the third aspect, further comprising: a gas supply unit for supplying the gas to the first gas flow path; and the processing liquid nozzle facing the substrate. The processing liquid is ejected from the central part of the main surface; the plurality of gas division flow paths include a first gas division flow path and a second gas division flow path; the distance between the first gas division flow path and the rotation axis is a ratio The distance between the second gas splitting flow path and the rotation axis is also short; the gas supply part is made so that the first flow velocity of the gas in the first gas splitting flow path becomes smaller than that in the second gas splitting flow path The gas is supplied to the first gas splitting flow path and the second gas splitting flow path so that the second flow velocity of the gas is still higher.

The substrate processing apparatus of a sixth aspect is the substrate processing apparatus according to the fourth aspect or the fifth aspect, wherein the first unit body is formed with: a plurality of gas supply flow paths for dividing the plurality of the gases One of the aforementioned gas dividing flow paths in the flow paths supplies gas; the downstream ports of the plurality of aforementioned gas supplying flow paths are connected to one of the aforementioned gas dividing flow paths among the plurality of aforementioned gas splitting flow paths at positions different from each other in plan view road.

The substrate processing apparatus of the seventh aspect is the substrate processing apparatus described in any one of the first aspect to the sixth aspect, wherein the first unit main system further comprises: a first plate-shaped body disposed on the The first gas flow path is further upstream than the first electrode group, and has a plurality of openings facing the first electrode group.

The substrate processing apparatus of an eighth aspect is the substrate processing apparatus of the seventh aspect, wherein the processing liquid nozzle sprays the processing liquid toward the center portion of the main surface of the substrate; and the plurality of the openings include a first Opening and second opening; the distance between the first opening and the rotation axis is shorter than the distance between the second opening and the rotation axis; the area of the first opening is smaller than the area of the second opening Small.

The substrate processing apparatus of the ninth aspect is the substrate processing apparatus described in any one of the first aspect to the eighth aspect, wherein the first unit system further comprises: a shutter, which is to be set The outflow port of the first gas flow path on the downstream side of the first electrode group is opened and closed.

The substrate processing apparatus of a tenth aspect is the substrate processing apparatus of the ninth aspect, wherein the first unit body system further includes: a second plate-shaped body having a plurality of outflow ports as the first gas flow path outlet.

The substrate processing apparatus according to an eleventh aspect is the substrate processing apparatus according to the tenth aspect, wherein the processing liquid nozzle ejects the processing liquid toward a central portion of the main surface of the substrate; and the plurality of outflow ports include The first outflow port and the second outflow port; the distance between the first outflow port and the axis of rotation is shorter than the distance between the second outflow port and the axis of rotation; the area of the first outflow port is smaller than the area of the second outflow port The area of the outflow port is still small.

The substrate processing apparatus of a twelfth aspect is the substrate processing apparatus according to any one of the first to eleventh aspects, wherein the processing liquid nozzle is ejected toward the center of the main surface of the substrate The treatment solution; the distance between the first electric field space and the rotation axis in the electric field spaces between the plurality of the electrodes is shorter than the distance between the second electric field space and the rotation axis in the electric field space; An electric field is applied to the first electric field space with an electric field intensity higher than that of the electric field applied to the second electric field space.

The substrate processing apparatus of the thirteenth aspect is the substrate processing apparatus described in the twelfth aspect, wherein the voltage applied between the two electrodes for forming the first electric field space among the plurality of the electrodes is The magnitude is larger than the magnitude of the voltage applied between two electrodes of the plurality of the electrodes for forming the second electric field space.

The substrate processing apparatus of the fourteenth aspect is the substrate processing apparatus described in the twelfth aspect or the thirteenth aspect, wherein the interval between the two electrodes used to form the first electric field space among the plurality of the electrodes The interval is narrower than the interval between two electrodes used to form the second electric field space among the plurality of electrodes.

The substrate processing apparatus of the fifteenth aspect is the substrate processing apparatus described in any one of the first aspect to the fourteenth aspect, further comprising a second plasma generating unit; the aforementioned second plasma generating unit The system includes: a second electrode group, which has a plurality of second electrodes; and a second unit body, which forms a second gas flow path, and the second gas flow path is used to make the gas flow toward the second electrode group; the aforesaid The second plasma generating unit supplies the gas that has passed through the second electrode group to the processing liquid before it is ejected from the processing liquid nozzle and impinges on the main surface of the substrate.

The substrate processing apparatus of a sixteenth aspect is the substrate processing apparatus described in any one of the first to fifteenth aspects, wherein the first plasma generating unit surrounds the processing liquid nozzle when viewed from above and forming a blocking plate together with the processing liquid nozzle; the blocking plate is arranged vertically above the upper surface of the substrate held by the substrate holding portion, and faces the upper surface of the substrate in the vertical direction. .

The substrate processing apparatus of the seventeenth aspect is the substrate processing apparatus described in any one of the first aspect to the sixteenth aspect, wherein a plurality of the first electrode groups are provided; and a plurality of the first electrodes are provided. The clusters are arranged side by side in the circumferential direction of the aforementioned rotation axis. [Inventive effect]

According to the substrate processing apparatus of the first aspect, since the first electrodes are spaced apart from each other in a plan view, an electric field can be applied in a wider range in a plan view, and plasma can be generated in a wider range. Therefore, the active species caused by the plasma can be supplied to the main surface of the substrate in a wider range, whereby the treatment can be performed more uniformly.

According to the substrate processing apparatus of the second aspect, arc discharge generated between electrodes can be suppressed.

According to the substrate processing apparatus of the third aspect, the first plasma generating unit supplies the gas to the main surface of the rotating substrate, whereby the active species can be supplied to the entire main surface of the substrate.

According to the substrate processing apparatus of the fourth aspect, the flow rate can be adjusted for each gas division flow path.

According to the substrate processing apparatus of the fifth aspect, the uniformity of processing on the main surface of the substrate can be improved.

According to the substrate processing apparatus of the sixth aspect, the gas can be supplied to the gas dividing flow channel more uniformly.

According to the substrate processing apparatus of the seventh aspect, the gas can be supplied to the electrode group more uniformly.

According to the substrate processing apparatus of the eighth aspect, the uniformity of processing on the main surface of the substrate can be improved.

According to the substrate processing apparatus of the ninth aspect, in the state where the shutter closes the outflow port, the gas stays in the first gas flow path, so that more active species can be generated. In this state, the shutter opens the outflow port, whereby more active species can be supplied to the main surface of the substrate.

According to the substrate processing apparatus of the tenth aspect, the gas can be supplied to the main surface of the substrate more uniformly.

According to the substrate processing apparatus of the eleventh aspect, the uniformity of the processing on the main surface of the substrate can be improved.

According to the substrate processing apparatus of the twelfth aspect, the uniformity of processing on the main surface of the substrate can be improved.

According to the substrate processing apparatus of the thirteenth aspect, an electric field with a high electric field intensity can be applied at a position close to the rotation axis.

According to the substrate processing apparatus of the fourteenth aspect, an electric field with a high electric field intensity can be applied at a position close to the rotation axis.

According to the substrate processing apparatus of the fifteenth aspect, the active species can be allowed to act on the processing liquid before the liquid is applied to the central portion of the substrate, and the processing capability of the processing liquid before the liquid can be improved. Therefore, the central portion of the main surface of the substrate can be processed more appropriately.

According to the substrate processing apparatus of the sixteenth aspect, it is possible to suppress the diffusion of the atmosphere between the upper surface of the substrate and the barrier plate to the space above the barrier plate. In addition, it is possible to prevent the atmosphere from being mixed into the atmosphere between the barrier plate and the substrate from the outside, resulting in a decrease in the gas concentration in the atmosphere.

According to the substrate processing apparatus of the seventeenth aspect, the voltage of each of the first electrode groups in the circumferential direction can be individually adjusted, whereby the intensity of the electric field space of each of the first electrode groups can be adjusted.

Hereinafter, embodiments will be described with reference to the accompanying drawings. In addition, the drawings are schematically shown, and for convenience of description, the configuration is omitted and simplified as appropriate. In addition, the mutual relationship of the magnitude|size and position of the structure shown in a figure is not described correctly, and it will change suitably.

In addition, in the description shown below, the same components are attached with the same reference numerals and shown in the drawings, and the names and functions of these components are regarded as the same. Therefore, the detailed description of these constituent elements may be omitted in order to avoid repetition.

In addition, in the description described below, even when a sequence number such as "first" or "second" is used, these terms are terms that are appropriately used in order to facilitate the understanding of the content of the embodiment, and are not Limited to the order generated by these sorted numbers, etc.

Unless otherwise specified, it is used to express the expression of relative or absolute positional relationship (for example, "towards one direction", "along one direction", "parallel", "orthogonal", "center", "concentric" and "coaxial", etc.) not only strictly express the indicated positional relationship, but also express a state in which the angle or distance has been relatively displaced within a tolerance or a range in which the same degree of function can be obtained. Unless otherwise specified, expressions used to indicate the state of equality (such as "same", "equal", "homogeneous", etc.) not only indicate the state of quantitative and exact equality, but also indicate that there is a tolerance or that the same can be obtained The state of the functional error of the degree. Unless otherwise specified, expressions used to express shapes (such as "square shape" or "cylindrical shape") not only geometrically and strictly express the indicated shape, but also express the same degree of There are shapes such as unevenness or chamfering within the range of efficacy. The expression "having", "having", "having", "containing" or "containing" one element is not an exclusive expression that excludes the existence of other elements. This expression of "at least one of A, B, and C" includes only A, only B, only C, any two of A to C, and all of A to C.

[First Embodiment] [Overall Configuration of Substrate Processing System 100 ] FIG. 1 is a plan view schematically showing an example of the configuration of a substrate processing system 100 . The substrate processing system 100 is a blade-type processing apparatus for processing substrates W that are to be processed one by one.

The substrate processing system 100 performs drying processing after processing the substrate W which is a disc-shaped semiconductor substrate. Here, a resist is formed on the main surface of the substrate W, and the substrate processing system 100 removes the resist as a process for the substrate W. As shown in FIG.

In addition, the substrate W is not limited to a semiconductor substrate. For example, the substrate W can be applied to glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for FED (Field Emission Display), substrates for optical disks, substrates for magnetic disks, and Various substrates such as substrates for optical disks. In addition, the shape of the substrate is not limited to a circular plate shape, and various shapes such as a rectangular plate-like shape, for example, can also be employed.

The substrate processing system 100 includes a load port 101 , an indexer robot 110 , a main transfer robot 120 , a control unit 90 and a plurality of processing units 130 .

As illustrated in FIG. 1 , a plurality of load ports 101 are arranged in a row. A carrier C is carried into each loading port 101 . As the carrier C, a front opening unified pod (FOUP; Front Opening Unified Pod), a standard mechanical interface (SMIF; Standard Mechanical Inter Face) box for accommodating the substrate W in a closed space, or a W Open Cassette (OC; Open Cassette) exposed to external air. The index robot 110 transports the substrate W between the carrier C and the main transport robot 120 . The main transfer robot 120 transfers the substrate W to the processing unit 130 .

The processing unit 130 processes the substrate W. Twelve processing units 130 are arranged in the substrate processing system 100 of the present embodiment.

Specifically, four towers are arranged so as to surround the main transfer robot 120, and the four towers are each included in the three processing units 130 stacked in the vertical direction.

One processing unit 130 of the processing units 130 superimposed in three segments is shown diagrammatically in FIG. 1 . In addition, the number of the processing units 130 in the substrate processing system 100 is not limited to twelve, and may be appropriately changed.

The main transfer robot 120 is installed in the center of the four towers on which the processing units 130 are stacked. The main transfer robot 120 carries the substrate W to be processed received from the index robot 110 into each of the processing units 130 . In addition, the main transfer robot 120 takes out the processed substrates W from the respective processing units 130 and transfers them to the index robot 110 . The control unit 90 controls the operation of each component of the substrate processing system 100 .

FIG. 2 is a functional block diagram schematically showing an example of the internal configuration of the control unit 90 . The control unit 90 is an electronic circuit, and includes, for example, a data processing unit 91 and a storage medium 92 . In the specific example of FIG. 2 , the data processing unit 91 and the storage medium 92 are connected to each other via the bus bar 93 . The data processing unit 91 may also be an arithmetic processing device such as a CPU (Central Processor Unit; central processing unit). The storage medium 92 may also include a non-transitory storage medium (eg, ROM (Read Only Memory) or a hard disk) 921 and a temporary storage medium (eg, RAM (Random Access Memory)) )922. For example, a program for specifying the processing executed by the control unit 90 may be stored in the non-transitory storage medium 921 . The data processing unit 91 executes this program, whereby the control unit 90 can execute processing specified by the program. Of course, part or all of the processing executed by the control unit 90 may be executed by the hard disk. In the specific example of FIG. 2 , an aspect in which the index robot 110 , the main transfer robot 120 , and the processing unit 130 are connected to the bus bar 93 is schematically shown as an example.

[Substrate processing apparatus 1] FIG. 3 is a side view schematically showing an example of the configuration of the substrate processing apparatus 1 . The substrate processing apparatus 1 corresponds to one processing unit 130 among a plurality of processing units 130 . The plurality of processing units 130 may have the same configuration as each other, or may have mutually different configurations.

As shown in the example of FIG. 3 , the substrate processing apparatus 1 includes a substrate holding unit 2 , a processing liquid nozzle 4 , and a first plasma generating unit 5 . Hereinafter, each configuration will be briefly described first, and then will be described in detail.

The board|substrate holding part 2 rotates the board|substrate W about the rotation axis Q1, holding the board|substrate W in a horizontal attitude|position. Here, the horizontal posture is a posture in which the thickness direction of the substrate W is along the vertical direction. The rotation axis Q1 is an axis passing through the center of the substrate W and along the vertical direction. Such a substrate holding portion 2 is also referred to as a spin chuck.

Hereinafter, the radial direction and the circumferential direction with respect to the rotation axis Q1 may be simply referred to as the radial direction and the circumferential direction.

The processing liquid nozzle 4 supplies the processing liquid to the main surface of the substrate W held by the substrate holding portion 2 . In FIG. 3 , the processing liquid ejected toward the substrate W from the processing liquid nozzle 4 is schematically shown by the broken line arrows. Here, although sulfuric acid is assumed as the treatment liquid, for example, a liquid containing at least one of sulfate, peroxosulfuric acid, and peroxosulfate, or a liquid containing hydrogen peroxide may be used. Typically, the treatment liquid is an aqueous solution.

The first plasma generating unit 5 is disposed at a position adjacent to the processing liquid nozzle 4 when viewed along the rotation axis Q1 (ie, when viewed from above). A gas is supplied from the gas supply unit 50 to the first plasma generation unit 5 , and the gas flows toward the main surface of the substrate W through the first gas flow path 60 in the first plasma generation unit 5 . The gas system can use an oxygen-containing gas containing oxygen. The oxygen-containing system contains, for example, oxygen gas, ozone gas, carbon dioxide gas, air, or a mixed gas of at least two of these gases. The gas may further include an inert gas. The inert gas system contains, for example, nitrogen gas, argon gas, neon gas, helium gas, or a mixed gas of at least two of these gases.

As will be described later, the first plasma generating unit 5 has the first electrode group 7 on the downstream side of the first gas flow path 60 . The first electrode group 7 is configured so that gas can pass therethrough, and an electric field is applied to the surrounding electric field space for plasma. The so-called electric field space refers to a space in which an electric field for generating plasma is applied. When the gas passes through the first electrode group 7 (ie, the electric field space), the electric field acts on the gas. Thereby, a part of the gas is ionized to generate plasma (plasma generation process). For example, an inert gas system such as argon gas is ionized to generate a plasma. Here, as an example, plasma is generated in an atmospheric pressure state. Here, the atmospheric pressure is, for example, 80% or more of the standard atmospheric pressure and 120% or less of the standard atmospheric pressure.

When plasma is generated, various reactions such as dissociation and excitation of molecules and atoms due to electron collision reactions occur, and various active species such as highly reactive neutral radicals are also generated. For example, plasma ions or electrons act on an oxygen-containing gas to generate oxygen radicals. Such active species move along the flow of the gas, and flow out from the lower end portion of the first plasma generating unit 5 toward the main surface of the substrate W held by the substrate holding portion 2 . The gas flowing from the first plasma generating unit 5 toward the substrate W is schematically shown by solid arrows in FIG. 3 .

In the example of FIG. 3 , the processing liquid nozzle 4 and the first plasma generating unit 5 are provided vertically above the substrate W held by the substrate holding portion 2 , and supply the processing liquid and gas to the upper surface of the substrate W, respectively.

In the example of FIG. 3 , the processing liquid nozzle 4 and the first plasma generating unit 5 are integrally connected to form the nozzle head 3 . In the example of FIG. 3 , the nozzle head 3 is provided so as to be movable by the head moving mechanism 30 .

The head moving mechanism 30 can move the nozzle head 3 between the standby position and the processing position on the moving path. The stand-by position refers to a position where the nozzle head 3 does not interfere with the conveyance path of the substrate W during unloading and loading of the substrate W, for example, a position radially outward of the substrate holding portion 2 in plan view. The processing position refers to a position where the nozzle head 3 supplies the processing liquid and gas to the substrate W, and is a position where the nozzle head 3 faces the main surface of the substrate W in the vertical direction. As a more specific example, the processing position refers to a position at which the processing liquid nozzle 4 can make the processing liquid impregnate the central portion of the substrate W. As shown in FIG. The head moving mechanism 30 may also include, for example, a linear motion mechanism such as a linear motor or a ball screw mechanism.

Alternatively, the head moving mechanism 30 may include an arm-type moving mechanism instead of the linear motion mechanism. In this case, the nozzle head 3 is connected to the front end of the arm extending in the horizontal direction. The base end of the arm is connected to a support column extending in the vertical direction. The support column is connected to the motor and rotates around the central axis of the support column along the vertical direction. The support column rotates around the central axis of the support column, whereby the arm rotates in the horizontal plane around the central axis, and the nozzle head 3 provided at the front end of the arm moves in an arc shape in the horizontal plane around the central axis. The head moving mechanism 30 is configured such that the arc-shaped moving path follows the diameter of the substrate W when viewed from above.

The processing liquid ejected from the processing liquid nozzle 4 and impregnated onto the main surface of the substrate W flows radially outward from the main surface of the substrate W, and is scattered from the peripheral edge of the substrate W to the outside. Therefore, in the example of FIG. 3 , the substrate processing apparatus 1 is provided with a cup 8 . The cover 8 has a cylindrical shape surrounding the substrate holding portion 2 . The central shaft system of the cylindrical shape of the cover 8 coincides with the rotation axis Q1. The processing liquid scattered from the peripheral edge of the substrate W to the outside collides with the inner peripheral surface of the cover 8 and flows downward, and is recovered by a recovery mechanism (not shown) or drained to the outside by a drain mechanism (not shown).

Furthermore, in the substrate processing apparatus 1 , an exhaust port (not shown) is provided on the outer side in the radial direction of the substrate holding portion 2 . For example, an exhaust port may be provided in the cover 8 . The active species and the gas system supplied to the main surface of the substrate W flow along the main surface of the substrate W to the outside in the radial direction, and are exhausted from the exhaust port.

[Substrate holding part 2] In the example of FIG. 3 , the substrate holding unit 2 includes a base 21 , a rotation mechanism 23 , and a plurality of chucks 22 . The base 21 has a circular plate shape with the rotation axis Q1 as the center, and a plurality of clamps 22 are erected on the upper surface of the base 21 . The plurality of jigs 22 are provided along the periphery of the substrate W at equal intervals. The clamp 22 is drivable between a clamp position where the clamp 22 abuts the periphery of the substrate W and a release position where the clamp 22 has moved away from the periphery of the substrate W. The plurality of jigs 22 hold the peripheral edge of the substrate W in a state where the plurality of jigs 22 are stopped at the respective jig positions. The holding of the substrate W is released in a state where the plurality of clamps 22 are stopped at the respective release positions. A clip driving unit (not shown) for driving the plurality of clips 22 is configured by, for example, a link mechanism, a magnet, and the like, and is controlled by the control unit 90 .

The rotation mechanism 23 includes a motor 231 . The motor 231 is connected to the lower surface of the base 21 via the shaft 232 and is controlled by the control unit 90 . The motor 231 rotates the shaft 232 and the base 21 around the rotation axis Q1, whereby the substrate W held by the plurality of clamps 22 also rotates around the rotation axis Q1.

Further, the substrate holding portion 2 does not necessarily need to include the jig 22 . The substrate holding portion 2 may hold the substrate W by, for example, attractive force or electrostatic force.

[Processing liquid nozzle 4] The processing liquid nozzle 4 of the nozzle head 3 has, for example, a cylindrical shape. A discharge port 4a is provided on the lower end surface of the processing liquid nozzle 4 . In the example of FIG. 3 , the processing liquid nozzle 4 discharges the processing liquid in an oblique direction. As a specific example, the processing liquid nozzle 4 discharges the processing liquid in an oblique direction from the discharge port 4a so that the processing liquid reaches the central portion of the substrate W. As shown in FIG. That is, the processing liquid nozzle 4 is provided on the outer side in the radial direction of the rotation axis Q1 in a plan view, and discharges the processing liquid toward the center portion of the substrate W from the outer side in the radial direction.

One end of a processing liquid supply pipe 41 is connected to the processing liquid nozzle 4 . In the example of FIG. 3 , the processing liquid supply pipe 41 is arranged to penetrate through the first plasma generating unit 5 . Thereby, the processing liquid nozzle 4 is connected to the first plasma generating unit 5 via the processing liquid supply pipe 41 . The other end of the processing liquid supply pipe 41 is connected to the processing liquid supply source 43 . The processing liquid supply source 43 includes, for example, a tank for storing the processing liquid.

A valve 42 is interposed between the treatment liquid supply pipe 41 . The valve 42 is controlled by the control unit 90 , and when the valve 42 is opened, the processing liquid flows from the processing liquid supply source 43 through the processing liquid supply pipe 41 and is supplied to the processing liquid nozzle 4 . The processing liquid is discharged toward the main surface of the substrate W from the discharge port 4 a of the processing liquid nozzle 4 . By closing the valve 42, the discharge of the processing liquid from the discharge port 4a of the processing liquid nozzle 4 is stopped.

In addition, the substrate processing apparatus 1 may have a structure for supplying a plurality of types of processing liquids to the main surface of the substrate W. As shown in FIG. For example, the processing liquid nozzle 4 may have a plurality of processing liquid flow paths. In this case, each processing liquid flow path is individually connected to each kind of processing liquid supply source. Alternatively, the substrate processing apparatus 1 may include a nozzle different from the nozzle head 3 . As plural kinds of treatment liquids, for example, chemical liquids such as sulfuric acid, pure water, ozone water, carbonated water, and rinse liquids such as isopropyl alcohol can be used. Here, the processing liquid nozzle 4 is made to have a plurality of processing liquid flow paths.

[First Plasma Generation Unit 5] The first plasma generating unit 5 and the processing liquid nozzle 4 are arranged adjacent to each other in a plan view. In the example of FIG. 3 , since the processing liquid nozzle 4 is positioned radially outward of the rotation axis Q1 in a plan view, it can be provided so that a part of the first plasma generating unit 5 faces the rotation axis Q1 in the vertical direction. The first plasma generating unit 5 . In the example of FIG. 3, the 1st plasma generating unit 5 is provided in the position which opposes the area|region extending from the center part (rotation axis Q1) to the peripheral part of the board|substrate W in a vertical direction. That is, in the example of FIG. 3 , the width in the radial direction of the first plasma generating unit 5 is equal to or larger than the radius of the substrate W. As shown in FIG.

4 to 7 are diagrams schematically showing an example of the configuration of the first plasma generating unit 5 . FIG. 4 is a side cross-sectional view of the first plasma generating unit 5 , and FIGS. 5 to 7 respectively show the AA cross section, the BB cross section, and the CC cross section of FIG. 4 . As shown in FIG. 4 , the first plasma generating unit 5 includes a first unit body 6 and a first electrode group 7 .

The first unit body 6 forms a first gas flow path 60 for allowing the gas from the gas supply unit 50 to flow toward the main surface of the substrate W. As shown in FIG. The first electrode group 7 is provided on the downstream side of the first gas flow path 60, and is configured so that gas can pass therethrough as described later. The first electrode group 7 faces the main surface of the substrate W in the vertical direction. The gas system flows toward the main surface of the substrate W through the first electrode group 7 from vertically above to vertically below. When the gas passes through the first electrode group 7 (ie, the electric field space), an electric field is applied to the gas, and by applying the electric field, a part of the gas is ionized to generate plasma. Various active species are generated when plasma is generated, and these active species are supplied to the main surface of the substrate W along the flow of the gas.

[First unit body 6] The first unit body 6 is formed of an insulator (dielectric) such as quartz or ceramics, and a first gas flow path 60 is formed inside. In the example of FIG. 4 , a plurality of gas division flow paths 61 are formed inside the first unit main body 6 , and the plurality of gas division flow paths 61 serve as a part of the downstream side of the first gas flow path 60 . A plurality of gas dividing flow paths 61 are formed adjacent to each other in plan view. In other words, the first unit body 6 is provided with a flow path partition portion 63 for partitioning one or more of the plurality of gas division flow paths 61 .

In the example of FIG. 4 , three gas division flow paths 61 a to 61 c are formed as a plurality of gas division flow paths 61 . In the example of FIG. 4 , the three gas division flow paths 61 a to 61 c are formed in this order as they move away from the position close to the processing liquid nozzle 4 . That is, the gas division flow path 61 a is closest to the processing liquid nozzle 4 , the gas division flow path 61 b is the second closest to the processing liquid nozzle 4 , and the gas division flow path 61 c is the farthest away from the processing liquid nozzle 4 . In addition, it can also be considered that the gas dividing flow paths 61a to 61c are arranged in this order as they move away from the position close to the rotation axis Q1 in a plan view. In other words, the distance between the gas division flow path 61a and the rotation axis Q1 is shorter than the distance between the gas division flow path 61b and the rotation axis Q1, and the distance between the gas division flow path 61b and the rotation axis Q1 is shorter than the distance between the gas division flow path 61b and the rotation axis Q1 The distance between the flow path 61c and the processing liquid nozzle 4 is also short. Since the rotation axis Q1 can be grasped as an imaginary line extending infinitely in the vertical direction, when the rotation axis Q1 passes through the gas division flow path 61a, the distance between the gas division flow path 61a and the rotation axis Q1 is zero.

In the example of the figure, flow path partitions 63 a and 63 b are provided as the flow path partition 63 . The flow path partition part 63a is located between the gas division flow paths 61a and 61b and partitions the gas division flow paths 61a and 61b. The flow path partition part 63b is located between the gas division flow paths 61b and 61c and partitions the gas division flow paths 61b and 61c. The flow path partition portion 63a is provided at a position closer to the rotation axis Q1 than the flow path partition portion 63b.

The gas dividing flow paths 61 a to 61 c are formed at positions overlapping the first electrode group 7 in a plan view. Each of the gas dividing flow paths 61a to 61c is opened vertically downward, and the gas system flows vertically downward from the lower openings of the gas dividing flow paths 61a to 61c toward the first electrode group 7 and passes through the first electrode group 7 in the vertical direction. Since the gas division flow paths 61 a to 61 c are formed at different positions in plan view, the gas systems from the gas division flow paths 61 a to 61 c pass through different regions of the first electrode group 7 .

In the example of FIG. 5 , the gas dividing flow path 61a has a semicircular shape in plan view, and the arc surface of the gas dividing flow path 61a is along a virtual arc with the rotation axis Q1 as the center. The gas dividing flow path 61a faces the central portion of the substrate W in the vertical direction.

The gas division flow path 61b is formed radially outward of the gas division flow path 61a. In the example of FIG. 5 , the gas dividing flow path 61b has a semi-circular arc shape of equal width in plan view, and the arc surface on the inner side in the radial direction of the gas dividing flow path 61b is along the outer side in the radial direction of the gas dividing flow path 61a arc surface. That is, the flow path partition part 63a has a semicircular arc-like plate shape, and the thickness direction of the flow path partition part 63a is along the radial direction. The inner peripheral surface of the flow path partition portion 63a is a circular arc surface on the outer side in the radial direction of the gas dividing flow path 61a, and the outer peripheral surface of the flow path partition portion 63a is a circle on the inner side in the radial direction of the gas dividing flow path 61b. Arc. The gas dividing flow path 61b faces the intermediate portion of the substrate W that is radially outward from the central portion in the vertical direction.

The gas division flow path 61c is formed radially outward of the gas division flow path 61b. In the example of FIG. 5, the gas dividing flow path 61c has a circular arc surface on the inner side in the radial direction, and the circular arc surface is a circular arc surface along the outer side in the radial direction of the gas dividing flow path 61b. That is, the flow path partition portion 63b has a semicircular arc-like plate-like shape, and is provided in such a posture that the thickness direction of the flow path partition portion 63b follows the radial direction. The inner peripheral surface of the flow path partition portion 63b is a circular arc surface on the outer side in the radial direction of the gas dividing flow path 61b, and the outer peripheral surface of the flow path partition portion 63b is a circle on the inner side in the radial direction of the gas dividing flow path 61c. Arc.

In the example of FIG. 5 , the gas dividing flow path 61c is formed by the following surfaces: a circular arc surface on the inner side in the radial direction; a first surface extending from both ends of the circular arc surface toward the opposite side; a second surface , extending from the ends on the opposite sides of the first surface in a direction away from the processing liquid nozzle 4 ; and an arc-shaped surface connecting the ends of the second surface to each other. In the example of FIG. 5 , the arcuate surface of the gas dividing flow path 61 c has a shape along the periphery of the substrate W, and the point of the arcuate surface closest to the outer side in the radial direction is located further outward in the radial direction than the periphery of the substrate W . That is, at least a part of the radially outer surface of the gas dividing flow path 61c farthest from the rotation axis Q1 is located radially outward of the peripheral edge of the substrate W. As shown in FIG. The gas dividing flow path 61c faces the peripheral edge portion of the substrate W that is radially outward of the intermediate portion in the vertical direction.

In the examples of FIGS. 4 to 6 , a gas supply channel 62 is formed inside the first unit body 6 ; the gas supply channel 62 is used as a part of the upstream side of the first gas channel 60 to divide the gas The flow path 61 supplies gas. The upstream port 621 of the gas supply channel 62 is formed, for example, on the radially outer side surface 601 of the first unit body 6 . The side surface 601 is the side surface on the opposite side to the processing liquid nozzle 4 (see FIG. 4 ). The downstream ports 622 of the gas supply channels 62 are connected to the corresponding gas division channels 61 . Here, since the gas division flow paths 61a to 61c are formed, the gas supply flow paths 62a to 62c are formed corresponding to the gas division flow paths 61a to 61c, respectively.

The gas supply flow path 62c is a flow path for supplying gas to the gas division flow path 61c. In the example of FIG. 5, a plurality of (five in the figure) gas supply flow paths 62c are formed. The downstream ports 622c of the plurality of gas supply flow paths 62c are connected to the gas division flow path 61c at positions different from each other in plan view. More specifically, the downstream ports 622c of the three gas supply flow paths 62c are formed on the radially outer arc-shaped surfaces of the gas division flow paths 61c, and the downstream ports 622c of the two gas supply flow paths 62c are formed in the gas division flow paths 62c, respectively. The second surfaces of the flow path 61c facing each other. Thereby, since the gas can be supplied to the gas division flow path 61c from a plurality of locations, the gas can be supplied to the gas division flow path 61c more uniformly.

In the example of FIG. 5 , the upstream ports 621 c of the plurality of gas supply flow paths 62 c are formed in a horizontal line on the side surface 601 of the first unit body 6 . Each gas supply flow path 62c extends in the horizontal plane from the upstream port 621c and reaches the downstream port 622c. In the example of FIG. 4 and FIG. 5, each gas supply flow path 62c is formed in the same layer (height position) as the gas division flow paths 61a-61c.

The gas supply flow path 62a is a flow path for supplying gas to the gas division flow path 61a. In the example of FIG. 4, the gas supply flow path 62a is formed in a layer (height position) vertically above the gas supply flow path 62c and the gas division flow paths 61a to 61c. Here, the downstream port 622a of the gas supply flow path 62a is formed on the upper surface vertically above the gas division flow path 61a (see also FIG. 6 ). In addition, the upstream port 621a of the gas supply flow path 62a is formed on the side surface 601 of the first unit body 6 vertically above the upstream port 621c of the gas supply flow path 62c. In the example of FIG. 6, the gas supply flow path 62a extends linearly in the horizontal plane from the upstream port 621a and reaches the downstream port 622a formed on the upper surface of the gas division flow path 61a.

The gas supply flow path 62b is a flow path for supplying gas to the gas division flow path 61b. In the example of FIG. 6, the gas supply flow path 62b is formed in the same layer (height position) as the gas supply flow path 62a. In the example of FIG. 6 , a plurality of (two in the figure) gas supply flow paths 62b are formed, and the downstream ports 622b of the plurality of gas supply flow paths 62b are connected to the gas division at positions different from each other in plan view. flow path 61b. Here, the downstream port 622b is formed in the upper surface of the gas dividing flow path 61b. For example, a plurality of downstream ports 622b may also be formed on a virtual arc with the rotation axis Q1 as the center. Thereby, since the gas can be supplied to the gas division flow path 61b from a plurality of locations, the gas can be supplied to the gas division flow path 61b more uniformly.

The upstream port 621b of the gas supply flow path 62b is formed on the side surface 601 of the first unit body 6 vertically above the upstream port 621c of the gas supply flow path 62c. In the example of FIG. 6, the upstream port 621b of the gas supply flow path 62b is formed in the horizontal direction both sides of the upstream port 621a of the gas supply flow path 62a. Each gas supply flow path 62b extends in the horizontal plane from the upstream port 621b and reaches the downstream port 622b.

In addition, a plurality of gas supply flow paths 62a may also be provided in the gas division flow path 61a closest to the rotation axis Q1 as required. Thereby, the gas can be supplied to the gas division flow path 61a from a plurality of locations in plan view, and the gas can be supplied to the gas division flow path 61a more uniformly.

[Gas supply unit 50] The gas supply part 50 supplies gas to the first gas flow path 60 through the upstream port 621 of the first unit body 6 . The gas supply unit 50 includes a gas supply pipe 51 and a valve 52 . Here, since a plurality of gas supply flow paths 62 a to 62 c are formed, gas supply pipes 51 a to 51 c are provided as the gas supply pipe 51 .

The upstream port 621c of each gas supply channel 62c is connected to the downstream end of the gas supply pipe 51c (see FIG. 5). A valve 52c serving as a valve 52 is interposed between each gas supply pipe 51c. The valve 52c is controlled by the control unit 90, and the supply of gas to each gas supply channel 62c and the supply of gas to each gas supply channel 62c are switched by opening and closing the switching valve 52c. The valve 52c may be a valve capable of adjusting the flow rate of the gas, or a flow rate adjustment valve may be separately provided in the gas supply pipe 51c.

The upstream port 621b of each gas supply channel 62b is connected to the downstream end of the gas supply pipe 51b (see FIG. 6 ). A valve 52b serving as a valve 52 is interposed between each gas supply pipe 51b. The valve 52b is controlled by the control unit 90, and by opening and closing the switching valve 52b, the supply of gas to each gas supply channel 62b is switched and the supply of gas to each gas supply channel 62b is stopped. The valve 52b may be a valve capable of adjusting the flow rate of the gas, or a flow rate adjustment valve may be separately provided in the gas supply pipe 51b.

The upstream port 621a of the gas supply channel 62a is connected to the downstream end of the gas supply pipe 51a (see FIG. 6 ). A valve 52a serving as a valve 52 is interposed in the gas supply pipe 51a. The valve 52a is controlled by the control unit 90, and the supply of the gas to the gas supply channel 62a and the supply of the gas to the gas supply channel 62a are switched by opening and closing the switching valve 52a. The valve 52a may be a valve capable of adjusting the flow rate of the gas, or a flow rate adjustment valve may be separately provided in the gas supply pipe 51a.

According to such a gas supply part 50, the flow rate of the gas which flows through the gas division|segmentation flow paths 61a-61c can be individually adjusted. For example, the gas supply unit 50 can adjust the flow rate of the gas in each of the gas division flow paths 61a to 61c so that the flow rate of the gas satisfies the following relationship. For example, the gas supply unit 50 can adjust each flow rate so that the flow velocity of the gas in the gas division flow path 61a becomes higher than the flow velocity of the gas in the gas division flow path 61b, and the gas in the gas division flow path 61b becomes higher. The flow velocity of the gas becomes higher than the flow velocity of the gas in the gas dividing flow path 61c. That is, the closer to the rotation axis Q1, the higher the flow rate of the gas is. This effect will be described in detail later.

In addition, in the above example, since the valve 52c (flow rate adjustment valve) is provided in each gas supply pipe 51c, the gas supply unit 50 can individually adjust the flow rate of the gas in the plurality of gas supply channels 62c. Therefore, the flow rate of the gas flowing into the gas dividing flow path 61c can be adjusted with respect to the plurality of downstream ports 622c. Thereby, the gas can be supplied to the gas dividing flow path 61c more uniformly.

Furthermore, in the above example, since the valve 52b (flow rate adjustment valve) is provided in each gas supply pipe 51b, the gas supply unit 50 can individually adjust the flow rate of the gas in the plurality of gas supply channels 62b. Therefore, the flow rate of the gas flowing into the gas dividing flow path 61b can be adjusted with respect to the plurality of downstream ports 622b. Thereby, the gas can be supplied to the gas dividing flow path 61b more uniformly.

In addition, a plurality of gas supply flow paths 62a and a plurality of gas supply pipes 51a may be provided corresponding to the gas division flow paths 61a, and valves 52a (flow rate adjustment valves) may be interposed between the gas supply pipes 51a. Thereby, the flow rate of the gas which flows into the gas division flow path 61a can be adjusted with respect to the several downstream ports 622a, and the gas can be supplied to the gas division flow path 61a more uniformly.

[First plate body 64] In the example of FIG. 4 , the first unit body 6 further includes a first plate-shaped body 64 . The first plate-like body 64 is provided in the first gas flow path 60 . Specifically, the first plate-like body 64 is provided on the upstream side of the flow of the gas with respect to the first electrode group 7 , and is provided at a position facing the first electrode group 7 in the vertical direction. The first plate-like body 64 has a plate-like shape, and is arranged in a posture in which the thickness direction of the first plate-like body 64 is along the vertical direction. A plurality of openings 641 are formed in the first plate body 64 . The plurality of openings 641 pass through the first plate-shaped body 64 in the vertical direction, and have, for example, a circular shape in a plan view. The plurality of openings 641 are, for example, arranged two-dimensionally in plan view, and are arranged in a matrix as a more specific example. The gas system flowing in the first gas flow path 60 flows toward the first electrode group 7 through the plurality of openings 641 .

Here, two first plate-shaped bodies 64a, 64b are provided as the first plate-shaped body 64 (see also FIG. 4). The first plate-shaped body 64a is provided corresponding to the gas dividing flow paths 61a and 61b. The first plate-like body 64a has a semicircular shape in a plan view, and faces the gas dividing flow paths 61a and 61b in the vertical direction. Specifically, the lower end of the flow path partition portion 63a is connected to the upper surface of the first plate-shaped body 64a, and the region of the first plate-shaped body 64a that is radially inward of the flow path partition portion 63a is in the vertical direction Opposed to the gas dividing flow path 61a, the region of the first plate-shaped body 64a radially outward of the flow path partition portion 63a faces the gas dividing flow path 61b in the vertical direction. The gas system flowing through the gas dividing flow paths 61a and 61b flows toward the first electrode group 7 through the plurality of openings 641 of the first plate-shaped body 64a.

The first plate-shaped body 64b is provided corresponding to the gas dividing flow path 61c. The first plate-like body 64b has the same shape as the gas dividing flow path 61c in plan view, and faces the gas dividing flow path 61c in the vertical direction. The gas system flowing in the gas dividing flow path 61c flows toward the first electrode group 7 through the plurality of openings 641 of the first plate-shaped body 64b.

In this way, the gas system flowing through the gas dividing flow paths 61 flows toward the first electrode group 7 through the plurality of openings 641 of the first plate-shaped body 64 . Therefore, the gas can flow toward the first electrode group 7 more uniformly. Since the uniformity of the gas decreases as the distance between the first plate-like body 64 and the first electrode group 7 increases, the distance may be set in consideration of the uniformity of the gas.

In addition, in the example of FIG. 5, the magnitude|size of the opening 641 differs between the 1st plate-shaped bodies 64a, 64b. This part is described in detail later.

[Processing liquid supply pipe 41] In the example of FIG. 4 , the processing liquid supply pipe 41 connected to the processing liquid nozzle 4 penetrates the first unit body 6 at a layer (height position) vertically above the gas supply flow path 62a. That is, the first unit body 6 has a plurality of layers of flow path structures in the vertical direction. Specifically, a processing liquid flow path (processing liquid supply pipe 41 ) through which the processing liquid flows toward the processing liquid nozzle 4 is formed in the uppermost layer of the first unit main body 6 . Gas supply flow paths 62a and 62b through which gas flows toward the gas division flow paths 61a and 61b are formed in the intermediate layer of the first unit main body 6 . The gas division flow paths 61c to 61c and the gas supply flow path 62c are formed in the lowermost layer of the first unit main body 6, and the gas supply flow path 62c supplies the gas to flow toward the gas division flow path 61c.

[First electrode group 7] As described above, the first electrode group 7 is provided on the downstream side of the first gas flow path 60 , and is provided in a region overlapping the first gas flow path 60 in a plan view. Specifically, the first electrode group 7 is provided in a region overlapping the gas dividing flow paths 61 a to 61 c in a plan view.

The first electrode group 7 includes a plurality of first electrodes 71 . The plurality of first electrodes 71 are formed of conductors such as metal, and are arranged at intervals in a plan view (see FIG. 7 ). In the example of FIG. 7 , each of the first electrodes 71 has an elongated shape that is long in the horizontal direction. Here, the elongated shape refers to a shape in which the dimension in the longitudinal direction of the first electrode 71 is longer than the dimension in the horizontal direction perpendicular to the longitudinal direction of the first electrode 71 . In the example of FIG. 7 , the plurality of first electrodes 71 are provided in a posture in which the longitudinal direction of the first electrodes 71 is orthogonal to the radial direction.

The plurality of first electrodes 71 are arranged at intervals in a horizontal arrangement direction (here, the radial direction) orthogonal to the longitudinal direction of the first electrodes 71 . In the example of FIG. 7 , six first electrodes 71 a to 71 f are shown as the plurality of first electrodes 71 . The first electrodes 71a to 71f are arranged in this order from one side to the other side in the arrangement direction. The first electrodes 71a to 71d are arranged in the same plane, for example.

Potentials of mutually different polarities are applied to two first electrodes 71 adjacent to each other among the plurality of first electrodes 71 . In the example of FIG. 7 , the first electrodes 71a, 71c, and 71e arranged in odd numbers from one side in the arrangement direction are connected to each other at the other end (base end) in the longitudinal direction via a connection portion 711a. The connection portion 711a has, for example, a plate-like shape, and is integrally formed of, for example, the same material as the first electrodes 71a, 71c, and 71e. The connection portion 711a is connected to the first output end 81 of the power source 80 via a pull-out wire.

In the example of FIG. 7 , the first electrodes 71b, 71d, and 71f arranged in an even number from one side in the arrangement direction are connected to each other at the other end (base end) in the longitudinal direction via a connection portion 711b. The connection portion 711b has, for example, a plate-like shape, and is integrally formed of, for example, the same material as the first electrodes 71b, 71d, and 71f. In such a first electrode group 7, a plurality of first electrode groups 71 are arranged in a comb-like shape. The connection portion 711b is connected to the second output terminal 82 of the power supply 80 via the pull-out wire.

The power supply 80 includes, for example, a switching power supply circuit (eg, an inverter current), and is controlled by the control unit 90 . The power supply 80 applies a voltage (eg, a high frequency voltage) between the first output terminal 81 and the second output terminal 82 . Thereby, an electric field is generated in the space (electric field space) between the plurality of first electrodes 71 .

Since the first electrode group 7 is located on the downstream side of the first gas flow path 60 , the gas system flowing along the first gas flow path 60 passes through the electric field space between the plurality of first electrodes 71 . When the gas passes through the electric field space, the electric field acts on the gas, and a part of the gas is ionized to generate plasma (plasma generation process). Various active species are generated when the plasma is generated, and these active species move toward the main surface of the substrate W along the flow of the gas.

The distance between the first electrode group 7 and the substrate W is set to such a distance that arc discharge does not occur between the first electrode group 7 and the substrate W. The distance between the first electrode group 7 and the substrate W is set to, for example, approximately 2 mm or more and approximately 5 mm or less.

[dielectric protection member 72] In the examples of FIGS. 4 and 7 , each of the first electrodes 71 is covered with a dielectric protection member 72 . The dielectric protection member 72 is formed of an insulator (dielectric) such as quartz or ceramic, and covers the surface of the first electrode 71 . For example, the dielectric protection member 72 is adhered to the surface of the first electrode 71 . The dielectric protection member 72 may also be a dielectric film formed on the surface of the first electrode 71 . The dielectric protection member 72 can protect the first electrode 71 from plasma. In the example of FIG. 4 , each of the first electrodes 71 has a circular cross-sectional shape, and each of the dielectric protection members 72 has a cross-sectional circular shape.

[Dielectric partition member 73] In the example of FIG. 4 and FIG. 7 , the dielectric partition member 73 is provided between the two first electrodes 71 of the first electrodes 71 adjacent to each other. Specifically, the dielectric partition member 73 is provided between the two first electrodes 71 of all the first electrodes 71 of the plurality of first electrodes 71 . The dielectric spacer member 73 is formed of an insulator (dielectric body) such as quartz or ceramic, and is provided at intervals from each of the first electrodes 71 . The dielectric spacer member 73 has, for example, a plate-like shape, and is disposed in such a manner that the thickness direction of the dielectric spacer member 73 is along the arrangement direction (here, the radial direction) of the first electrodes 71 . The main surface of the dielectric partition member 73 has, for example, a rectangular shape long in the longitudinal direction of the first electrode 71 .

In the example of FIG. 4 , the upper end of the dielectric spacer member 73 is positioned above the upper end of the first electrode 71 , and the lower end of the dielectric spacer member 73 is positioned below the lower end of the first electrode 71 . When manufacturing errors and the like are also considered, for example, the position of the lowest upper end of the plurality of dielectric partition members 73 is higher than the position of the highest upper end of the plurality of first electrodes 71 . The highest lower end position is lower than the lowest lower end position among the plurality of first electrodes 71 .

As long as such a dielectric spacer member 73 is provided, the insulating distance between the plurality of first electrodes 71 can be increased. Thereby, it is possible to suppress arc discharge between the plurality of first electrodes 71 while increasing the voltage of the plurality of first electrodes 71 to generate plasma more efficiently.

[Frame 74] In the examples of FIGS. 4 and 7 , each of the dielectric partition members 73 is connected to the frame body 74 . The frame body 74 is also formed of an insulator (dielectric body) such as quartz or ceramics. When viewed from above, the frame body 74 surrounds the plurality of dielectric partition members 73 , and both ends in the longitudinal direction of each dielectric partition member 73 are connected to the inner surface of the frame body 74 .

The frame body 74 also substantially surrounds the plurality of first electrodes 71 . In the example shown in the figure, the connection parts 711a and 711b are located outside the frame body 74, and the respective first electrodes 71a, 71c and 71e penetrate the frame body 74 on one side in the longitudinal direction and are connected to the connection part 711a. Each of the first electrodes 71b, 71c, and 71f penetrates the frame body 74 at the other side in the longitudinal direction, and is connected to the connection portion 711b. In other words, most of the first electrodes 71 are located inside the frame body 74 . The frame body 74 is connected to, for example, the lower end of the first unit body 6 .

The gas system from the gas dividing flow paths 61 a to 61 c passes through the first electrode group 7 in the frame 74 . Specifically, the gas system passes downward through the spaces between the plurality of first electrodes 71 and the plurality of dielectric partition members 73 . When the electric field generated in the electric field space between the plurality of first electrodes 71 acts on the gas, a part of the gas is ionized to generate plasma. Various active species are generated when plasma is generated. These active species move downward along the flow of the gas and flow out toward the main surface of the substrate W.

As described above, the nozzle head 3 can supply the processing liquid and the gas to the main surface of the substrate W through the processing liquid nozzle 4 and the first plasma generating unit 5 .

[Operation of the substrate processing apparatus 1 ] Next, an example of the operation of the substrate processing apparatus 1 will be described. FIG. 8 is a flowchart showing an example of the operation of the substrate processing apparatus 1 . First, the unprocessed substrate W is carried into the substrate processing apparatus 1 by the main transfer robot 120 (step S1 ). Here, a resist is formed on the upper surface of the substrate W. FIG. The substrate holding unit 2 of the substrate processing apparatus 1 holds the loaded substrate W. Next, the substrate holding unit 2 starts to rotate the substrate W around the rotation axis Q1 (step S2).

Next, chemical solution processing is performed (step S3). Specifically, first, the head moving mechanism 30 moves the nozzle head 3 from the standby position to the processing position. Next, the valves 42 , 52 a to 52 c are opened, and the power source 80 applies a voltage to the first electrode 71 .

By opening the valve 42 , a treatment liquid (here, a chemical solution such as sulfuric acid) is ejected toward the upper surface of the substrate W from the ejection port 4 a of the treatment liquid nozzle 4 . Here, the chemical solution is supplied toward the central portion of the substrate W. As shown in FIG. The chemical liquid that has been applied to the upper surface of the rotating substrate W flows radially outward along the upper surface of the substrate W, and is scattered outward from the peripheral edge of the substrate W. As shown in FIG. Thereby, the chemical solution acts on the entire upper surface of the substrate W. As shown in FIG.

By opening the valves 52a to 52c, gas (here, a mixed gas of an oxygen-containing gas and a dilution gas) is supplied from the gas supply unit 50 to the first gas flow path 60 through the upstream ports 621a to 621c. The gas system flows into the gas division flow paths 61a to 61c via the gas supply flow paths 62a to 62c.

Here, the gas is supplied to the gas splitting flow path 61c farthest from the rotation axis Q1 at a first flow rate, and the gas is supplied to the gas splitting flow path 61b farthest from the rotation axis Q1 at a second flow rate larger than the first flow rate, The gas is supplied to the gas dividing flow path 61a closest to the rotation axis Q1 at a third flow rate larger than the second flow rate.

The gas system flowing downward in the gas dividing flow paths 61a and 61b passes through the plurality of openings 641 of the first plate-shaped body 64a. Thereby, the gas system is rectified and flows toward the first electrode group 7 more uniformly. Similarly, the gas system flowing downward in the gas dividing flow path 61c passes through the plurality of openings 641 of the first plate-shaped body 64b. Thereby, the gas system is rectified and flows toward the first electrode group 7 more uniformly.

Since the power source 80 applies a voltage to the first electrodes 71 , an electric field is generated in the electric field space between the first electrodes 71 in the first electrode group 7 . When the gas passes through the electric field space, the electric field acts on the gas, and a part of the gas is ionized to generate plasma. When the plasma is generated, various reactions such as dissociation and excitation of molecules and atoms by electron collision reactions occur, and various active species (eg, oxygen radicals) such as highly reactive neutral radicals are generated. For example, an argon gas system is plasmaized by an electric field, which acts on an oxygen-containing gas and generates oxygen radicals. These reactive species (eg, oxygen radicals) move along the flow of the gas and flow out toward the upper surface of the substrate W. FIG.

The active species is a chemical that acts on the upper surface of the substrate W. For example, when oxygen radicals act on sulfuric acid on the upper surface of the substrate W, peroxymonosulfuric acid (Caro's acid) is generated by the oxidative power of the oxygen radicals. Here, in the case of using a treatment liquid containing sulfuric acid, the higher the concentration of sulfuric acid, the higher the peeling force is expected. The carbosic acid can effectively remove the resist on the upper surface of the substrate W. In other words, the active species acts on the medicinal liquid, thereby enhancing the processing capability of the medicinal liquid.

In the substrate processing apparatus 1, hydrogen peroxide water is not used for the production of caloric acid. Therefore, in the case of recovering sulfuric acid and reusing the sulfuric acid, sulfuric acid can be recovered at a higher concentration.

In addition, the active species not only act on the chemical solution on the main surface of the substrate W, but also act on the substrate W directly. For example, even if the oxygen radical acts directly on the resist of the substrate W, the resist can be removed by the oxidative power of the oxygen radical.

In addition, in the above-mentioned example, the processing liquid nozzle 4 ejects the chemical liquid toward the center portion of the substrate W along the inclined direction inclined from the vertical direction. Therefore, the chemical liquid that has reached the central portion of the substrate W flows directly outward in the radial direction. Thereby, the liquid film of the chemical liquid formed on the upper surface of the substrate W can be thinned compared with the case where the chemical liquid is ejected in the vertical direction. Thereby, the active species can be made to act on the chemical solution at a position close to the upper surface of the substrate W. FIG. Therefore, the chemical solution whose processing capability has been improved is easy to act on the substrate W. As shown in FIG. In addition, it becomes easy for the active species to directly act on the main surface of the substrate W.

When the resist of the substrate W is sufficiently removed by the chemical solution and the active species, the valves 42, 52a to 52c are closed, and the output voltage of the power supply 80 is stopped. Thereby, the discharge of the chemical liquid from the processing liquid nozzle 4 is stopped, and the outflow of gas from the first plasma generating unit 5 is also stopped. Thereby, the substantial chemical solution treatment (here, the resist removal treatment) is completed.

Next, a cleaning process is performed (step S4). Specifically, the substrate processing apparatus 1 discharges the cleaning liquid toward the upper surface of the substrate W from, for example, the processing liquid nozzle 4 . Thereby, the chemical liquid system on the upper surface of the substrate W is replaced with the cleaning liquid.

When the chemical liquid on the upper surface of the substrate W is sufficiently replaced with the cleaning liquid, the discharge of the cleaning liquid from the processing liquid nozzle 4 is stopped, and the head moving mechanism 30 moves the nozzle head 3 to the standby position.

Next, a drying process is performed (step S5). For example, the substrate holding portion 2 increases the rotational speed of the substrate W. Thereby, the cleaning liquid on the upper surface of the substrate W is thrown off from the peripheral edge of the substrate W, and the substrate W is dried (that is, so-called spin drying).

When the substrate W is dried, the substrate holding unit 2 ends the rotation of the substrate W (step S6). Next, the processed substrate W is carried out from the substrate processing apparatus 1 by the main transfer robot 120 (step S7).

[Effect of the embodiment] In the substrate processing apparatus 1 , the processing liquid nozzle 4 and the first plasma generating unit 5 are arranged adjacent to each other in plan view. Furthermore, since the processing liquid ejected from the processing liquid nozzle 4 and deposited on the main surface of the substrate W flows on the main surface of the substrate W, the first plasma generating unit 5 supplies gas toward the main surface of the substrate W, thereby This enables the active species to act on the treatment liquid on the main surface of the substrate W. Therefore, the processing capability of the processing liquid on the main surface of the substrate W can be improved. Therefore, the processing liquid system acts on the main surface of the substrate W in a state where the processing capability has been improved, so that the substrate W can be processed in a shorter time.

In addition, in the substrate processing apparatus 1, the plurality of first electrodes 71 of the first electrode group 7 are arranged side by side in a plan view. For example, a plurality of first electrodes 71 having an elongated shape long in the horizontal direction are arranged at intervals in the short-side direction (arrangement direction) of the first electrodes 71 . Thereby, the area of the first electrode group 7 in plan view can be easily increased. Therefore, plasma can be generated in a wide range in plan view, and active species can be supplied to the main surface of the substrate W in a wide range. Therefore, the substrate W can be processed more uniformly.

In addition, in the above-described example, the processing liquid nozzle 4 and the first plasma generating unit 5 are integrally connected to each other. Therefore, the head moving mechanism 30 can integrally move the processing liquid nozzle 4 and the first plasma generating unit 5 . Thereby, the processing liquid nozzle 4 and the 1st plasma generating unit 5 can be moved with a simple structure. That is, unlike the present embodiment, when the processing liquid nozzle 4 and the first plasma generating unit 5 are not connected to each other, there is no need to move the processing liquid nozzle 4 and the first plasma generating unit 5 individually. mechanism. On the other hand, in the present embodiment, a single head moving mechanism 30 is sufficient. Therefore, the processing liquid nozzle 4 and the first plasma generating unit 5 can be moved with a simple configuration, and the apparatus size and manufacturing cost can be reduced.

In addition, in the above-mentioned example, the first plate-shaped body 64 having the plurality of openings 641 is provided on the upstream side with respect to the first electrode group 7 . Thereby, the gas system that has passed through the plurality of openings 641 passes through the first electrode group 7 more uniformly. As a result, the gas passes through the electric field space more uniformly, resulting in a more uniform plasma generation. Therefore, the active species can be generated more uniformly, and the active species can be supplied to the main surface of the substrate W more uniformly.

In addition, in the above-mentioned example, the flow path partition portion 63 is provided, and the flow path partition portion 63 partitions the first gas flow path 60 into a plurality of gas division flow paths 61 in the radial direction. Thereby, the flow rate of the gas can be adjusted for each gas division flow path 61 . For example, it is possible to adjust the flow rate of the gas in each gas division flow path 61 so that the flow velocity of the gas in the gas division flow path 61 close to the rotation axis Q1 becomes higher than the flow rate of the gas in the gas division flow path 61 away from the rotation axis Q1. flow. More specifically, the flow rate of each of the gas division flow paths 61a to 61c can be adjusted in such a way that the flow velocity of the gas in the gas division flow path 61a closest to the rotation axis Q1 becomes the highest, and the gas next to the rotation axis Q1 becomes the highest. The flow velocity of the gas in the split flow path 61b becomes the second highest, and the flow velocity of the gas in the gas split flow path 61c farthest from the rotation axis Q1 becomes the lowest.

In addition, active species such as oxygen radicals are known to be inactivated in a short period of time. Therefore, the lower the flow rate of the gas, the higher the possibility of deactivation of the active species before reaching the main surface of the substrate W. FIG. As described above, as long as the flow velocity of the gas in the gas dividing flow path 61a is high, more active species can be allowed to reach the upper surface of the substrate W at a position close to the rotation axis Q1. On the other hand, since the flow velocity of the gas in the gas dividing flow paths 61b and 61c is low, fewer active species reach the upper surface of the substrate W at a position away from the rotation axis Q1.

Furthermore, the processing liquid that has reached the central portion of the substrate W flows radially outward as the substrate W rotates, that is, flows away from the rotation axis Q1 as the substrate W rotates. Therefore, first, the gas from the gas dividing flow path 61a is supplied to the processing liquid, and more active species are supplied. Next, when the processing liquid flows radially outward on the main surface of the substrate W, the gas from the gas dividing flow path 61b is supplied to the intermediate portion of the substrate W that is radially outward from the central portion. When the processing liquid flows further radially outward, the gas from the gas dividing flow path 61 c is supplied to the peripheral portion of the substrate W that is radially outward from the intermediate portion. Thereby, the amount of the active species supplied to the treatment liquid decreases as the treatment liquid flows outward in the radial direction.

In addition, although a part of the active ingredient (here, caloric acid) generated by the active species acting on the processing liquid at the center of the substrate W acts on the main surface at the center of the substrate W and is consumed, the remaining A part of it flows along the substrate W toward the outer side in the radial direction together with the processing liquid. Therefore, the active ingredient due to the active species supplied to the central portion of the substrate W remains in the intermediate portion of the substrate W that is radially outward from the central portion. Therefore, when the active species are supplied to the processing liquid in the same amount as the central portion of the substrate W as well, the effective components in the processing liquid at the intermediate portion become smaller than the effective components in the processing liquid at the central portion. Furthermore, the uniformity of the processing with respect to the substrate W may be reduced. Likewise, when the active species are supplied to the processing liquid at the peripheral portion of the substrate W in the same amount as that in the intermediate portion, the active species in the processing liquid at the peripheral portion become larger than those in the processing liquid at the intermediate portion. There are still many active ingredients, and the uniformity of the processing with respect to the substrate W is reduced.

On the other hand, in the above-mentioned example, as the processing liquid flows toward the outer side in the radial direction of the substrate W, the number of active species supplied to the processing liquid decreases. Therefore, the uniformity of the processing of the substrate W can be further improved. Furthermore, compared with the case where the gas is supplied to all the gas division flow paths 61 at a large flow rate, the consumption amount of the gas can be reduced.

In addition, in the above example, the dielectric partition member 73 is provided between the first electrodes 71 . This makes it possible to suppress arc discharge between the first electrodes 71 while increasing the voltage applied to the first electrodes 71 to promote the generation of plasma.

In addition, in the above-mentioned example, the width in the radial direction of the portion directly in front of the first electrode group 7 in the first gas flow path 60 of the first plasma generating unit 5 is equal to or larger than the radius of the substrate W, and the width of the first electrode group 7 is equal to or larger than the radius of the substrate W. The overall radial width of the surrounding electric field space is also equal to or greater than the radius of the substrate W, and the radial width of the frame body 74 is also equal to or greater than the radius of the substrate W. Such a first plasma generating unit 5 supplies gas from the central portion of the substrate W to a region of the substrate W or more including the peripheral portion of the radius or more. Therefore, the first plasma generating unit 5 can supply the active species to the entire main surface of the substrate W by supplying the gas to the main surface of the substrate W in rotation.

[First electrode group 7] FIG. 9 is a cross-sectional view schematically showing another example of the configuration of the first electrode group 7 . In the example of FIG. 9, the first electrode 71 has a rectangular cross-sectional shape. In the example of FIG. 9 , the width (ie, height) in the vertical direction of the first electrodes 71 is wider than the width in the arrangement direction (here, the radial direction) of the first electrodes 71 . Since the gas system flows along the vertical direction in the electric field space between the first electrodes 71, as long as the width of the first electrode 71 in the vertical direction is wide, the electric field can be applied to the gas for a longer time. Thereby, plasma can be generated in a wider range in the vertical direction, whereby more active species can be generated.

In the example of FIG. 9, the dielectric protection member 72 also has a cross-sectional rectangular shape. In the example of FIG. 9 , the width (ie, height) in the vertical direction of the dielectric protection member 72 is also wider than the width in the arrangement direction. Thereby, the flow of the gas flowing in the vertical direction between the dielectric protection members 72 can be adjusted.

The dielectric spacer member 73 is not provided in the example of FIG. 9 . In this case, the width in the arrangement direction of the dielectric protection members 72 is set to be wide, whereby arc discharge between the first electrodes 71 can be suppressed.

[Area of opening 641] In the example of FIG. 5 , the areas of the plurality of openings 641 of the first plate-shaped body 64 vary according to the distance from the rotation axis Q1. For example, the area of the opening 641 close to the rotation axis Q1 becomes smaller than the area of the opening 641 away from the rotation axis Q1. More specifically, the first plate-shaped body 64a is provided at a position closer to the rotation axis Q1 than the first plate-shaped body 64b, and the area of the opening 641 formed in the first plate-shaped body 64a is larger than that of the first plate-shaped body 64a. The area of the opening 641 of the body 64b is also small.

Here, when focusing on one opening 641 (hereinafter referred to as the first opening 641) of the first plate-shaped body 64a and one opening 641 (hereinafter referred to as the second opening 641) of the first plate-shaped body 64b, the following way to explain. The distance between the first opening 641 and the rotation axis Q1 is shorter than the distance between the second opening 641 and the rotation axis Q1 , and the area of the first opening 641 is smaller than that of the second opening 641 .

Thereby, the flow velocity of the gas can be increased at a position close to the rotation axis Q1. Therefore, more active species can be supplied to the processing liquid at the central portion of the substrate W, and the uniformity of the processing of the substrate W can be improved.

[Second Embodiment] The substrate processing apparatus 1 of the second embodiment has the same configuration as the substrate processing apparatus 1 of the first embodiment except for the configuration of the first unit body 6 of the nozzle head 3 . FIG. 10 is a diagram schematically showing an example of the configuration of the nozzle head 3 according to the second embodiment.

In the second embodiment, the first unit body 6 accommodates the first electrode group 7 . The first electrode group 7 is provided inside the first unit body 6 at the downstream side in the first gas flow path 60 .

The first unit body 6 further includes a blocking door 65 . The shutter 65 is provided on the lower end portion of the first unit body 6 on the downstream side of the first electrode group 7 . The shutter 65 is controlled by the control unit 90 to open and close the outflow port of the first gas flow path 60 formed at the lower end of the first unit body 6 . The specific configuration of the shutter 65 is not particularly limited, and an example is briefly described below.

FIG. 11 is a side cross-sectional view schematically showing an example of the configuration in the vicinity of the outflow port of the first gas flow path 60 . In the example of FIG. 11 , the second plate-shaped body 66 is provided in the first unit body 6 . The second plate-shaped body 66 is provided on the downstream side of the first gas flow path 60 rather than the first electrode group 7 , and is provided with the thickness direction of the second plate-shaped body 66 along the vertical direction. FIG. 12 is a plan view schematically showing an example of the configuration of the second plate-shaped body 66 . In the example of FIG. 12 , the second plate-like body 66 has, for example, a rectangular shape in which the outer side in the radial direction is curved in an arc shape in a plan view. The peripheral edge of the second plate-like body 66 is connected to the lower end of the first unit body 6 . A plurality of openings 661 are formed in the second plate-shaped body 66 , and the openings 661 serve as outflow ports of the first gas flow path 60 . Hereinafter, the opening 661 is also referred to as the outflow port 661 . The plurality of outflow ports 661 penetrate the second plate-shaped body 66 in the thickness direction. The plurality of outflow ports 661 are, for example, two-dimensionally arranged in a plan view, and are arranged in an array as a more specific example. The outflow port 661 has, for example, a circular shape when viewed from above.

The shutter 65 switches the opening and closing of the outflow port 661 . The shutter 65 has, for example, a plate-like shape, and is arranged in a posture in which the thickness direction of the shutter 65 is along the vertical direction. The shutter 65 is provided so as to overlap with the second plate-shaped body 66, for example. A plurality of openings 651 are also provided in the blocking door 65 . The plurality of openings 651 pass through the shutter 65 in the vertical direction. The plurality of openings 651 are formed in the same arrangement as the outflow ports 661 when viewed from above. The plurality of openings 651 have, for example, a circular shape, and the diameter of the openings 651 is, for example, equal to or larger than the diameter of the outflow port 661 .

The shutter 65 is provided so as to be able to move horizontally with respect to the second plate-shaped body 66 . The shutter 65 can move back and forth between the first position and the second position, the first position is the position where the plurality of openings 651 are offset from the plurality of outflow ports 661 in the horizontal direction, and the second position is the plurality of openings 651 and the plurality of outlet ports 661 . The positions of the two outflow ports 661 are opposite to each other. In the first position, the portion other than the opening 651 of the shutter 65 faces the plurality of outflow ports 661 and closes the outflow ports 661 . FIG. 11 shows a state in which the shutter 65 is stopped at the first position. In the second position, the opening 651 of the shutter 65 and the corresponding outflow port 661 are opposed to each other, and the outflow port 661 is connected to the external space through the corresponding opening 651 . That is, the outflow port 661 is opened.

The drive unit 67 is controlled by the control unit 90 and can drive the shutter 65 . For example, the drive unit 67 reciprocates the shutter 65 between the first position and the second position. The drive unit 67 has a drive mechanism such as a ball screw mechanism or an air cylinder.

In addition, the shutter 65 may have a plate-like shape without the opening 651 . In this case, for example, the driving unit 67 may make the shutter 65 face the second plate-shaped body 66 in the vertical direction at a position where the shutter 65 does not face the second plate-shaped body 66 in the vertical direction. move back and forth between positions.

When the shutter 65 closes the outflow port 661 , the gas system supplied from the gas supply unit 50 stays in the first gas flow path 60 of the first unit main body 6 . Thereby, the amount of active species (concentration of active species) in the first gas flow path 60 can be increased. Also, in this state, the shutter 65 opens the outflow port 661 , thereby allowing more active species to flow out from the outflow port 661 of the first plasma generating unit 5 .

An example of the operation of the substrate processing apparatus 1 according to the second embodiment is the same as that shown in FIG. 8 . However, when the chemical solution treatment is started (step S3 ), the valves 52 a to 52 c are first opened in a state where the shutter 65 closes the outflow port 661 and the valve 42 is closed. Thereby, the gas is supplied from the gas supply unit 50 to the first plasma generating unit 5 before supplying the processing liquid. This gas system stays in the first gas flow path 60 . In addition, the power source 80 applies a voltage to the first electrode 71 . Thereby, in the electric field space around the first electrode group 7 , a part of the gas is ionized to generate plasma. Active species are also generated when plasma is generated. Since the shutter 65 is closed, the gas system remaining in the electric field space receives the action of the electric field for a longer period of time, so that more plasma is generated, and more active species are generated when the plasma is generated.

Next, the valve 42 is opened to supply the processing liquid from the processing liquid nozzle 4 to the main surface of the substrate W, and the shutter 65 is opened to supply the gas to the main surface of the substrate W. By opening the shutter 65 , more active species remaining in the first gas flow path 60 flow out toward the main surface of the substrate W. As shown in FIG. Therefore, more active species act on the processing liquid on the main surface of the substrate W and the main surface of the substrate W. Thereby, the processing capability of the processing liquid can be further improved, and the number of active species directly acting on the main surface of the substrate W also increases. Thereby, the processing time of the substrate W can be shortened.

Furthermore, in the above-described example, since the plurality of outflow ports 661 are provided, the active species can be supplied to the main surface of the substrate W more uniformly.

In the chemical solution treatment (step S3 ), the shutter 65 may be opened intermittently. That is, opening and closing of the shutter 65 can also be alternately switched every predetermined time. The shutter 65 closes the outflow port 661, whereby the gas stays in the first gas flow path 60, thereby generating more active species; It is supplied to the main surface of the substrate W with the flow of the gas.

In addition, in the above-described example, since the shutter 65 is provided between the first electrode group 7 and the substrate W, the first electrode group 7 is provided at a position further away from the substrate W. Therefore, it is difficult for the plasma generated in the electric field space around the first electrode group 7 to reach the substrate W. Therefore, damage to the substrate W by the plasma can be suppressed.

[The area of the outflow port 661] In the example of FIG. 12 , the area of the outflow port 661 in the area close to the rotation axis Q1 is smaller than the area of the outflow port 661 in the area away from the rotation axis Q1. Here, when focusing on one outflow port 661 in the region close to the rotation axis Q1 (hereinafter referred to as the first outflow port 661 ) and one outflow port 661 in the region away from the rotation axis Q1 (hereinafter referred to as the second outflow port 661 ) can be explained in the following manner. The distance between the first outflow port 661 and the rotation axis Q1 is shorter than the distance between the second outflow port 661 and the rotation axis Q1 , and the area of the first outflow port 661 is smaller than that of the second outflow port 661 .

Thereby, the flow velocity of the gas can be increased at a position close to the rotation axis Q1. Therefore, more active species can be supplied to the processing liquid at the central portion of the substrate W, and the uniformity of the processing of the substrate W can be improved.

[Third Embodiment] An example of the configuration of the substrate processing apparatus 1 according to the third embodiment has the same configuration as that of the substrate processing apparatus 1 according to the first embodiment or the second embodiment, except for the first electrode group 7 . In the third embodiment, the electric field intensity distribution in the electric field space is adjusted. Specifically, the first electrode group 7 applies an electric field with a higher electric field strength in a space close to the rotation axis Q1, and applies an electric field with a lower electric field strength in a space far from the rotation axis Q1.

FIG. 13 is a plan view schematically showing another example of the configuration of the first electrode group 7 . In the example of FIG. 13 , six first electrodes 71 a to 71 f are also provided as the plurality of first electrodes 71 . The first electrodes 71a to 71f are arranged in this order from the side close to the rotation axis Q1. That is, the first electrode 71a is closest to the rotation axis Q1, and the first electrode 71f is the most distant from the rotation axis Q1. Therefore, the distance between the electric field space formed by the first electrodes 71a, 71b and the rotation axis Q1 is shorter than the distance between the electric field space formed by the first electrodes 71b, 71c and the rotation axis Q1. The distance between the electric field space formed by the first electrodes 71b and 71c and the rotation axis Q1 is shorter than the distance between the electric field space formed by the first electrodes 71c and 71d and the rotation axis Q1. The distance between the electric field space formed by the electrodes 71c and 71d and the rotation axis Q1 is shorter than the distance between the electric field space formed by the first electrodes 71d and 71e and the rotation axis Q1. The distance between the electric field space formed by 71e and the rotation axis Q1 is shorter than the distance between the electric field space formed by the first electrodes 71e, 71f and the rotation axis Q1. In addition, here, the intervals between the first electrodes 71a to 71f are substantially the same as each other.

In the example of FIG. 13 , a resistor 83 is provided between the first electrode 71 c and the first output terminal 81 of the power source 80 , and a resistor 84 is provided between the first electrode 71 e and the first output terminal 81 of the power source 80 . When current flows through the respective resistors 83 and 84 , a voltage drop occurs in the respective resistors 83 and 84 . The resistance value of the resistor 84 is higher than the resistance value of the resistor 83 , and the voltage drop in the resistor 84 is larger than the voltage drop in the resistor 83 . In the example of FIG. 13, the resistance value of the resistance value of the resistance 84 is larger than the resistance value of the resistance value 83 is shown by the number of resistances. In the example of FIG. 13 , the resistors 83 and 84 are not provided between the first electrode 71 a and the first output end 81 of the power source 80 . That is, the resistance value between the first electrode 71a closest to the rotation axis Q1 and the first output terminal 81 is smaller than the resistance value between the first electrode 71c and the first output terminal 81 next to the rotation axis Q1 , the resistance value between the first electrode 71c and the first output terminal 81 is smaller than the resistance value between the first electrode 71e and the first output terminal 81 which is farthest from the rotation axis Q1.

In addition, in the example of FIG. 13 , the resistors 83 and 84 are not provided between each of the first electrodes 71b, 71d, 71f and the second output end 82 of the power supply 80, and each of the first electrodes 71b, 71d, 71f and the second The resistance values between the output terminals 82 are approximately the same as each other.

According to this connection relationship, the voltage between the first electrodes 71a, 71b is larger than the voltage between the first electrodes 71b, 71c, and the voltage between the first electrodes 71b, 71c is the same as the voltage between the first electrodes 71c, 71d The voltage between the first electrodes 71c and 71d is larger than the voltage between the first electrodes 71d and 71e, and the voltage between the first electrodes 71d and 71e is approximately the same as the voltage between the first electrodes 71e and 71f. same. That is, the voltage between the first electrodes 71 tends to increase as it approaches the rotation axis Q1. Therefore, the electric field strength of the electric field space between the first electrodes 71 tends to increase as it approaches the rotation axis Q1. Specifically, the electric field intensity of the electric field space between the first electrodes 71a, 71b is the highest, and the electric field intensity of the electric field space between the first electrodes 71b, 71c and the electric field space between the first electrodes 71c, 71d is the second highest, The electric field intensity of the electric field space between the first electrodes 71d and 71e and the electric field space between the first electrodes 71e and 71f is the lowest.

With the first electrode group 7, an electric field of high electric field strength acts on the gas passing through the electric field space between the first electrodes 71a, 71b close to the rotation axis Q1. Therefore, more plasma is generated near the rotation axis Q1, thereby generating more active species. The electric field of the lower electric field strength acts on the electric field space between the first electrodes 71b to 71d farther from the rotation axis Q1, and the electric field of the further lower electric field strength acts on the first electrode through the further farther away from the rotation axis Q1. Gas in the electric field space between 71d to 71f. Therefore, fewer active species are generated as one moves away from the axis of rotation Q1.

As described above, according to the third embodiment, many active species can be generated at positions close to the rotation axis Q1. Thereby, the uniformity of the processing with respect to the substrate W can be improved.

In addition, in FIG. 13 , the first electrode 71 d can also be connected to the second output terminal 82 of the power source 80 via the resistor 83 . Thereby, the electric field intensity of the electric field space between the first electrodes 71b and 71c can be set to be higher than the electric field intensity of the electric field space between the first electrodes 71c and 71d. Similarly, the first electrode 71f can also be connected to the second output terminal 82 of the power source 80 via the resistor 84 . Thereby, the electric field intensity of the electric field space between the first electrodes 71d and 71e can be set to be higher than the electric field intensity of the electric field space between the first electrodes 71e and 71f.

FIG. 14 is a plan view schematically showing another example of the configuration of the first electrode group 7 . In the example of FIG. 14 , power sources 80 a to 80 c are provided as the power source 80 . The first electrode 71a is connected to the first output end 81 of the power source 80a, the first electrode 71b is connected to the second output end 82 of the power source 80a, the first electrode 71c is connected to the first output end 81 of the power source 80b, the first The electrode 71d is connected to the second output terminal 82 of the power supply 80b, the first electrode 71e is connected to the first output terminal 81 of the power supply 80c, and the first electrode 71f is connected to the second output terminal 82 of the power supply 80. That is, a pair of first electrodes 71a, 71b close to the rotation axis Q1 is connected to the power source 80a, and a pair of first electrodes 71c, 71d next to the rotation axis Q1 is connected to a power source 80b different from the power source 80a, and the furthest away from the power source 80a. The pair of first electrodes 71e and 71f of the rotation axis Q1 are connected to the power source 80c.

Thereby, the voltage between the first electrodes 71a, 71b, the voltage between the first electrodes 71c, 71d, and the voltage between the first electrodes 71d, 71f can be controlled independently of each other. Specifically, the power supply 80a outputs a higher voltage than the power supply 80b, and the power supply 80b outputs a higher voltage than the power supply 80c. Thereby, the electric field intensity in the electric field space between the first electrodes 71a, 71b close to the rotation axis Q1 can be set higher than the electric field intensity in the electric field space between the first electrodes 71c, 71d away from the rotation axis Q1 . In addition, the electric field intensity in the electric field space between the first electrodes 71c and 71d can be set to be higher than the electric field intensity in the electric field space between the first electrodes 71e and 71f.

FIG. 15 is a plan view schematically showing another example of the configuration of the first electrode group 7 . In the example of FIG. 15 , the first electrodes 71 a , 71 c , and 71 e are connected to the first output terminal 81 of the power source 80 , and the first electrodes 71 b , 71 d , and 71 f are connected to the second output terminal 82 of the power source 80 . Here, the magnitudes of the voltages applied to the first electrodes 71 are substantially the same as each other.

In the example of FIG. 15 , the intervals between the first electrodes 71 are narrowed as they approach the rotation axis Q1. In other words, the spatial density of the first electrode 71 becomes higher as it approaches the rotation axis Q1. Specifically, the interval between the first electrodes 71a, 71b is narrower than the interval between the first electrodes 71b, 71c, and the interval between the first electrodes 71b, 71c is narrower than the interval between the first electrodes 71c, 71d The interval is still narrower, the interval between the first electrodes 71c, 71d is narrower than the interval between the first electrodes 71d, 71e, and the interval between the first electrodes 71d, 71e is narrower than the interval between the first electrodes 71e, 71f. The interval is still narrow.

Thereby, an electric field can be applied to the electric field space between the first electrodes 71a and 71b close to the rotation axis Q1 with a higher electric field strength. On the other hand, an electric field can be applied to the electric field space between the first electrodes 71b and 71c with an electric field intensity lower than the electric field intensity in the electric field space between the first electrodes 71a and 71b. Similarly, an electric field can be applied to the electric field space between the first electrodes 71c and 71d with an electric field intensity lower than that of the electric field space between the first electrodes 71b and 71c. The following systems are the same.

[Fourth Embodiment] The substrate processing apparatus 1 of the fourth embodiment has the same configuration as the substrate processing apparatus 1 of any one of the first to third embodiments, excluding the presence or absence of the second plasma generating unit 500 . For example, the second plasma generating unit 500 is connected to the first plasma generating unit 5 , and constitutes the nozzle head 3 together with the processing liquid nozzle 4 and the first plasma generating unit 5 . FIG. 16 is a diagram schematically showing an example of the configuration of the nozzle head 3 according to the fourth embodiment.

In the example of FIG. 16 , the second plasma generating unit 500 is provided between the processing liquid nozzle 4 and the first plasma generating unit 5 . Like the first plasma generating unit 5, the second plasma generating unit 500 can supply gas passing through the electric field space for plasma. The second plasma generating unit 500 supplies the gas to the processing liquid before it is ejected from the processing liquid nozzle 4 and impinges on the main surface of the substrate W. As shown in FIG.

FIG. 17 is a side cross-sectional view schematically showing an example of the configuration of the second plasma generating unit 500 . In the example of FIG. 17 , the second plasma generating unit 500 is a so-called pen-type plasma source, and includes a second unit body 600 and a second electrode group 700 .

The second unit body 600 is formed of an insulator (dielectric) such as quartz or ceramic, and forms a second gas flow path 610 for gas to flow. In the example of FIG. 17 , the second unit body 600 includes a cylindrical body 620 and an inflow portion 630 . The cylindrical body 620 has a cylindrical shape (eg, a cylindrical shape). The inner space of the cylindrical body 620 corresponds to a part of the second gas flow path 610 , and the lower port of the cylindrical body 620 corresponds to the outflow port 610 a of the second gas flow path 610 .

The second unit body 600 includes an encapsulation part 650 . The encapsulation portion 650 is formed of, for example, an insulator (dielectric) such as resin (eg, silicon resin), and encapsulates the upper port of the cylindrical body 620 .

The inflow portion 630 is a member for allowing the gas to flow toward the inner space of the cylindrical body 620 , and is connected to the side surface of the cylindrical body 620 . The inflow portion 630 has, for example, a cylindrical shape, and the downstream port of the inflow portion 630 is formed on the side surface of the cylindrical body 620 . The inner space of the inflow portion 630 corresponds to a part of the upstream side of the first gas flow path 60 , and the entire inner space of the cylindrical body 620 and the inflow portion 630 corresponds to the first gas flow path 60 .

The gas is supplied from the gas supply part 50 to the upstream port of the inflow part 630 . The gas system supplied to the inflow portion 630 of the second plasma generation unit 500 is, for example, the same type of gas as the gas supplied to the first plasma generation unit 5 . In the example of FIG. 17 , the gas supply unit 50 includes a gas supply pipe 510 and a valve 520 . The upstream port of the inflow portion 630 is connected to the downstream end of the gas supply pipe 510 . The upstream end of the gas supply pipe 510 is connected to the gas supply source 53 . A valve 520 is interposed between the gas supply pipe 510 . The valve 520 is controlled by the control unit 90 , and by switching the opening and closing of the valve 520 , the supply of the gas to the inflow portion 630 is switched and the supply of the gas to the inflow portion 630 is stopped. The valve 520 may be a valve capable of adjusting the flow rate of the gas, or a flow rate adjustment valve may be additionally provided in the gas supply pipe 510 .

In such a second unit body 600, the gas flowing in from the upstream port of the inflow portion 630 flows through the second gas flow path 610 and flows out from the outflow port 610a.

The second electrode group 700 includes a plurality of second electrodes 710 . In the example of FIG. 17 , two second electrodes 710 a and 710 b are provided as the plurality of second electrodes 710 . The second electrode 710 is formed of a conductor such as metal, and has an elongated shape along the longitudinal direction of the central axis Q2 of the cylindrical body 620 . For example, the second electrode 710a has a cylindrical shape. A part of the longitudinal direction of the second electrode 710a is located in the inner space of the cylindrical body 620, and faces the inner peripheral surface of the cylindrical body 620 with an interval therebetween in the radial direction of the central axis Q2. In other words, a part of the longitudinal direction of the second electrode 710 a is loosely inserted into the cylindrical body 620 . In addition, the second electrode 710a also extends vertically above the upper port of the cylindrical body 620 . That is, the second electrode 710a penetrates the sealing portion 650 provided at the upper port of the cylindrical body 620 and extends vertically upward.

In the example of FIG. 17 , the second electrode 710 a is covered by the dielectric protection member 720 . The dielectric protection member 720 is formed of an insulator (dielectric) such as quartz or ceramic, and covers the second electrode 710a. Specifically, the dielectric protection member 720 covers at least the surface of the second electrode 710 a in the cylindrical body 620 . For example, the dielectric protection member 720 is adhered to the surface of the second electrode 710a. The dielectric protection member 720 may also be a dielectric film formed on the surface of the second electrode 710a. The dielectric protection member 720 can protect the second electrode 710a from the plasma.

The second electrode 710b is also formed of a conductor such as metal, and is provided so as to face the second electrode 710a in the radial direction of the central axis Q2. The second electrode 710b is opposed to a part of the front end side of the second electrode 710a. The second electrode 710b has, for example, a cylindrical shape, and surrounds a part of the front end side of the second electrode 710a. In FIG. 17 , the second electrode 710b is located outside the cylindrical body 620 . The central axis of the second electrode 710b substantially coincides with the central axis Q2 of the cylindrical body 620 .

The second electrode 710 a is connected to the first output terminal 81 of the power source 80 , and the second electrode 710 b is connected to the second output terminal 82 of the power source 80 . The power supply 80 outputs a voltage (eg, a high-frequency voltage) between the second electrodes 710a and 710b. Thereby, an electric field is applied to the electric field space between the second electrodes 710a and 710b. In addition, the second electrodes 710a and 710b may also be connected to other power sources different from the power source 80 . That is, the second electrode group 700 of the second plasma generating unit 500 may also be connected to a power source different from the power source 80 connected to the first electrode group 7 of the first plasma generating unit 5 .

By applying a voltage between the second electrodes 710a and 710b, an electric field can be applied to the electric field space between the second electrodes 710a and 710b. Since the electric field space is formed in a part of the first gas flow path 60 , the gas system flowing in the first gas flow path 60 passes through the electric field space. When the gas passes through the electric field space, the electric field acts on the gas, and a part of the gas is ionized to generate plasma. Active species are generated when the plasma is generated, and the active species move along the flow of the gas and flow out from the outflow port 610 a of the second gas flow path 610 .

The active species flowing out from the outlet 610a of the second plasma generating unit 500 is supplied to the processing liquid ejected from the processing liquid nozzle 4 and has not yet reached the main surface of the substrate W (see FIG. 16 ). Conversely, the second plasma generating unit 500 is provided so that the gas (containing the active species) can be supplied to the processing liquid before reaching the main surface of the substrate W. As shown in FIG. In the example of FIG. 16 , the second plasma generating unit 500 is provided between the processing liquid nozzle 4 and the first plasma generating unit 5, and the gas flows out vertically downward. Since the processing liquid nozzle 4 sprays the processing liquid in an inclined direction inclined to the side of the first plasma generating unit 5 , the processing liquid is applied to the main portion of the substrate W after crossing directly under the second plasma generating unit 500 . surface. In this way, the active species from the second plasma generating unit 500 acts on the processing liquid when the processing liquid straddles directly below the second plasma generating unit 500 . Thereby, the processing capacity of the processing liquid can be improved before the liquid is applied. As a more specific example, an active species such as an oxygen radical can act on the sulfuric acid before the liquid to generate a carloic acid. Thereby, the resist in the center part of the board|substrate W can also be removed more suitably.

As illustrated in FIG. 16 , the second plasma generating unit 500 may also be integrally connected with the first plasma generating unit 5 . In the example of FIG. 16 , the connecting member 550 connects the second plasma generating unit 500 and the first plasma generating unit 5 . Thereby, the first plasma generating unit 5 and the second plasma generating unit 500 can be integrally moved by the head moving mechanism 30 .

In addition, in the example of FIG. 17, although the 2nd electrode 710b is provided in the outer side of the cylindrical body 620, it may be provided in the inner side of the cylindrical body 620. In this case, as long as a dielectric protection member for covering the second electrode 710b is provided, it is sufficient.

FIG. 18 is a diagram schematically showing an example of the configuration of a part of the substrate processing apparatus 1 according to the fourth embodiment. In the example of FIG. 18 , the second plasma generating unit 500 is not connected to the first plasma generating unit 5 . In the example of FIG. 18 , the second plasma generating unit 500 is provided so as to be movable by the head moving mechanism 300 different from the head moving mechanism 30 . The specific configuration of the head moving mechanism 300 is the same as that of the head moving mechanism 30 .

The head moving mechanism 300 can reciprocate the second plasma generating unit 500 between the processing position and the standby position. The standby position refers to a position where the second plasma generating unit 500 does not interfere with the conveyance path of the substrate W during unloading and loading of the substrate W, for example, a position radially outward of the substrate holding portion 2 . The processing position refers to a position where the second plasma generating unit 500 can supply gas to the processing liquid from the discharge port 4a of the processing liquid nozzle 4 to the main surface of the substrate W. FIG.

FIG. 18 shows a state in which the nozzle head 3 and the second plasma generating unit 500 are located at the processing positions, respectively. In the example of FIG. 18 , the second plasma generating unit 500 is provided so as to avoid the area between the processing liquid nozzle 4 and the first plasma generating unit 5 . As a more specific example, it is provided on the opposite side of the first plasma generating unit 5 with respect to the processing liquid nozzle 4 .

[Fifth Embodiment] FIG. 19 is a diagram schematically showing an example of the configuration of the substrate processing apparatus 1 according to the fifth embodiment. The substrate processing apparatus 1 of the fifth embodiment has the same configuration as that of the substrate processing apparatus 1 of any one of the first to fourth embodiments, excluding the presence or absence of the barrier plate 800 .

The barrier plate 800 is positioned vertically above the substrate W held by the substrate holding portion 2 . The barrier plate 800 is a member for suppressing the diffusion of the atmosphere above the substrate W held by the substrate holding portion 2 to the surroundings. The barrier plate 800 has a plate-like shape, and is installed in a posture in which the thickness direction of the barrier plate 800 is along the vertical direction. The blocking plate 800 has a circular shape with the rotation axis Q1 as the center when viewed from above, and the diameter of the blocking plate 800 is larger than the diameter of the substrate W. As shown in FIG.

In the example of FIG. 19 , the barrier plate 800 includes a plate portion 810 and a hanging portion 820 . The plate portion 810 has a circular plate shape with the rotation axis Q1 as the center, and is arranged in a posture in which the thickness direction of the plate portion 810 is along the vertical direction. The hanging portion 820 has a cylindrical shape protruding vertically downward from the peripheral edge of the plate portion 810 . The front end of the hanging portion 820 is positioned between the cover 8 and the substrate W held by the substrate holding portion 2 in a plan view, and is positioned below the lower surface of the substrate W in the vertical direction.

The shielded space between the barrier plate 800 and the substrate W accommodates the nozzle head 3 stopped at the processing position. Various pipes (processing liquid supply pipe 41 and gas supply pipe 51 ) extending from the nozzle head 3 extend from the shielded space to the outside space through a slit (not shown) provided in the hanging portion 820 of the barrier plate 800 . The slits penetrate through the vertical lower part 820 in the radial direction, extend along the vertical direction, and open in the vertical direction.

The blocking plate 800 is provided so as to be able to be raised and lowered by the raising and lowering mechanism 850 . The elevating mechanism 850 has a mechanism such as a ball screw mechanism or a cylinder. The elevating mechanism 850 is controlled by the control unit 90 to reciprocate the blocking plate 800 between the blocking position and the standby position. The blocking position refers to a position close to the substrate W held by the substrate holding portion 2 , and a specific example is a position where the front end of the hanging portion 820 is lower than the substrate W. FIG. 19 shows the blocking plate 800 in a state in which it has stopped at the blocking position. The stand-by position refers to a position vertically above the blocking position, and is a position where none of the blocking plates 800 interferes with the conveyance path of the substrate W and the moving path of the nozzle head 3 .

The main transfer robot 120 can carry the substrate W to and from the substrate processing apparatus 1 in a state in which the elevating mechanism 850 raises the barrier plate 800 to the standby position and the head moving mechanism 30 moves the nozzle head 3 to the standby position. Unload the substrate W. With the substrate holding portion 2 holding the substrate W, the head moving mechanism 30 moves the nozzle head 3 to the processing position, and the elevating mechanism 850 lowers the blocking plate 800 to the blocking position, thereby completing the preparation for processing the nozzle head 3 .

In this state, the substrate holding portion 2 rotates the substrate W and the nozzle head 3 supplies the processing liquid and gas to the main surface of the substrate W, whereby the substrate W can be processed.

In this process, since the barrier plate 800 is located at the barrier position, the atmosphere between the barrier plate 800 and the substrate W can be prevented from spreading to the surroundings. In addition, it is possible to prevent the atmosphere from being mixed into the atmosphere between the barrier plate 800 and the substrate W from the outside, thereby reducing the gas concentration in the atmosphere.

FIG. 20 is a diagram schematically showing another example of the configuration of the substrate processing apparatus 1 according to the fifth embodiment. In the example of FIG. 20, the nozzle head 3 which consists of the processing liquid nozzle 4 and the 1st plasma generating unit 5 also functions as a blocking plate. Hereinafter, the nozzle head 3 , the processing liquid nozzle 4 , and the first plasma generating unit 5 of FIG. 20 are referred to as the nozzle head 3A, the processing liquid nozzle 4A, and the first plasma generating unit 5A, respectively.

In the example of FIG. 20 , the processing liquid nozzle 4A extends in the vertical direction, and faces the center portion of the substrate W in the vertical direction. The processing liquid nozzle 4A has a discharge port 4a on the lower end surface, and discharges the processing liquid in the vertical direction from the discharge port 4a. The processing liquid ejected from the ejection port 4a flows down vertically downward and reaches the center portion of the main surface of the substrate W. As shown in FIG.

The first plasma generating unit 5A is provided at a position adjacent to the processing liquid nozzle 4A in a plan view. However, the first plasma generating unit 5A is provided so as to surround the processing liquid nozzle 4A, and the outer edge of the first plasma generating unit 5A in plan view is formed in a circular shape with the rotation axis Q1 as the center. The outer diameter of the lower end portion of the first plasma generating unit 5A is equal to or larger than the diameter of the substrate W, for example.

In the example of FIG. 20 , the first unit body 6 of the first plasma generating unit 5A includes an upper surface portion 605 and a side wall portion 606 . The upper surface portion 605 has a circular shape with the rotation axis Q1 as the center in plan view, and a through hole 605 a through which the processing liquid nozzle 4 is disposed is formed in the center portion of the upper surface portion 605 . The processing liquid nozzle 4 is arranged to penetrate through the through hole 605 a, whereby the processing liquid nozzle 4 is fixed to the first unit body 6 . The side wall portion 606 has a cylindrical shape extending vertically downward from the peripheral edge of the upper surface portion 605 . The space surrounded by the upper surface portion 605 and the side wall portion 606 corresponds to the first gas flow path 60 .

In the example of FIG. 20 , the first unit body 6 is also provided with a flow path partition 63 , and the flow path partition 63 partitions the first gas flow path 60 into a plurality of gas division flow paths 61 . In the example of FIG. 20 , gas division flow paths 61 a and 61 b are formed as a plurality of gas division flow paths 61 . Therefore, in the example of FIG. 20, one flow path partition part 63 for partitioning the gas division flow paths 61a and 61b is provided. Here, the flow path partition portion 63 has a cylindrical shape with the rotation axis Q1 as the center. The inner diameter of the flow path partition part 63 is larger than the outer diameter of the processing liquid nozzle 4, and the space between the flow path partition part 63 and the processing liquid nozzle 4 becomes the gas dividing flow path 61a. The outer diameter of the flow path partition portion 63 is smaller than the inner diameter of the side wall portion 606, and the space between the flow path partition portion 63 and the side wall portion 606 becomes the gas dividing flow path 61b. Therefore, the gas division flow path 61a is formed in the vicinity of the rotation axis Q1, and the gas division flow path 61b is formed further away from the rotation axis Q1 than the gas division flow path 61a. In other words, the distance between the gas division flow path 61a and the rotation axis Q1 is shorter than the distance between the gas division flow path 61b and the rotation axis Q1.

The outer diameter of the gas dividing flow path 61b located on the outermost side in the radial direction may be equal to or larger than the diameter of the substrate W. As shown in FIG. In other words, the outer diameter of the first gas flow path 60 may be equal to or larger than the diameter of the substrate W. As shown in FIG.

A gas supply flow path 62 is formed on the upper surface portion 605 , and the gas supply flow path 62 is for supplying gas to the gas division flow path 61 . In the example of FIG. 20 , the upstream port 621 of the gas supply channel 62 is formed on the upper surface of the upper surface portion 605 , and the downstream port 622 of the gas supply channel 62 is formed on the lower surface of the upper surface portion 605 (that is, the gas upper surface of the divided flow path 61). Here, gas supply flow paths 62a and 62b are formed corresponding to the gas division flow paths 61a and 61b. The gas supply flow path 62a is a flow path for supplying gas to the gas division flow path 61a, and the gas supply flow path 62b is a flow path for supplying gas to the gas division flow path 61b.

Here, a plurality of (two in the figure) gas supply flow paths 62a are arranged, for example, at equal intervals in the circumferential direction of the rotation axis Q1. Thereby, since the gas can be supplied to the gas division flow path 61a from a plurality of circumferential positions, the gas can be supplied to the gas division flow path 61a more uniformly. In addition, here, a plurality of (two in the figure) gas supply flow paths 62b are arranged at equal intervals, for example, in the circumferential direction of the rotation axis Q1. Thereby, since the gas can be supplied to the gas division flow path 61b from a plurality of circumferential positions, the gas can be supplied to the gas division flow path 61b more uniformly.

The gas supply unit 50 supplies gas to the upstream port 621 of the gas supply channel 62 . Here, gas supply pipes 51a and 51b are provided corresponding to the gas supply flow paths 62a and 62b. In the example of FIG. 20 , the gas supply pipe 51a includes a branch pipe and a common pipe, one end of each branch pipe is connected to the upstream port 621a of the gas supply channel 62a, and the other end of the branch pipe is connected to one end of the common pipe, The other end of the common pipe is connected to the gas supply source 53 . The valve 52a is a common pipe interposed between the gas supply pipe 51a. The valve 52a is controlled by the control unit 90 . The valve 52a may be a flow rate adjustment valve, and can adjust the flow rate of the gas flowing inside the gas supply pipe 51a. Alternatively, a flow rate adjustment valve different from the valve 52a may be provided in the common pipe.

The gas supply pipe 51b also includes a branch pipe and a common pipe. One end of each branch pipe is connected to the upstream port 621b of the gas supply channel 62b, the other end of the branch pipe is connected to one end of the common pipe, and the other end of the common pipe is connected to at the gas supply source 53 . The valve 52b is a common pipe interposed between the gas supply pipe 51b. The valve 52b is controlled by the control unit 90 . The valve 52b may be a flow rate adjustment valve, and can adjust the flow rate of the gas flowing inside the gas supply pipe 51b. Alternatively, a flow rate adjustment valve different from the valve 52b may be provided in the common pipe.

Such a gas supply part 50 can individually adjust the flow rate of the gas in the gas division flow paths 61a and 61b. That is, the flow rate of the gas in the gas division flow path 61a close to the rotation axis Q1 can be adjusted independently of the flow rate of the gas in the gas division flow path 61b away from the rotation axis Q1. For example, each flow rate can be adjusted so that the flow rate of the gas in the gas division flow path 61a becomes higher than the flow rate of the gas in the gas division flow path 61b.

In the above-mentioned example, the valve 52a (flow rate adjustment valve) is provided in the common pipe of the gas supply pipe 51a and collectively adjusts the flow rate of the gas with respect to the plurality of gas supply flow paths 62a, however, it may be individually interposed in the gas supply pipe 51a branch pipe. In this case, the flow rate of the gas in the plurality of gas supply channels 62a can be adjusted individually, and the gas can be uniformly supplied to the gas division channel 61a. The same applies to the valve 52b (flow rate adjustment valve).

In the example of FIG. 20 , the first plate-shaped body 64 is also provided in the first unit body 6 . The first plate-like body 64 is provided on the downstream side of the gas dividing flow paths 61 a and 61 b and on the upstream side of the first electrode group 7 . The first plate-shaped body 64 has a circular shape with the rotation axis Q1 as the center in plan view, and a through hole 642 through which the processing liquid nozzle 4 is disposed is formed in the center portion of the first plate-shaped body 64 . The outer peripheral surface of the first plate-shaped body 64 is connected to the inner peripheral surface of the side wall portion 606 , and the lower end portion of the flow path partition portion 63 is connected to the upper surface of the first plate-shaped body 64 . The region of the first plate-shaped body 64 further inward in the radial direction than the flow path partition portion 63 faces the gas dividing flow path 61 a in the vertical direction, and the ratio of the flow path partition portion 63 in the first plate-shaped body 64 is further The region on the outer side in the radial direction faces the gas dividing flow path 61b in the vertical direction.

A plurality of openings 641 are formed in the first plate-shaped body 64 , and the gas system flowing in the gas dividing flow paths 61 a and 61 b flows toward the first electrode group 7 through the openings 641 of the first plate-shaped body 64 . Thereby, the gas can be supplied to the first electrode group 7 more uniformly.

FIG. 21 is a plan view schematically showing an example of the configuration of the first electrode group 7 (also referred to as the first electrode group 7A) according to the fifth embodiment. In FIG. 21, the first electrode group 7A also includes a plurality of first electrodes 71, and the plurality of first electrodes 71 are arranged at intervals in a plan view. In addition, each of the first electrodes 71 has an elongated shape that is long in the horizontal longitudinal direction, and is arranged in a row in the short-side direction.

Frame 74 is also shown in FIG. 21 . The frame body 74 has an annular shape with the rotation axis Q1 as the center, and is connected to the lower end portion of the side wall portion 606 of the first unit body 6 . The inner diameter of the frame body 74 may be equal to or larger than the diameter of the substrate W.

The plurality of first electrodes 71 are applied with potentials of different polarities from each other. In the example of FIG. 21 , in the longitudinal direction of the first electrode 71 , connecting portions 711 a and 711 b are provided on opposite sides of each other across the processing liquid nozzle 4 . The connection parts 711a and 711b have a circular arc-shaped plate shape with the rotation axis Q1 as the center. In the example of FIG. 21 , the connection parts 711 a and 711 b are provided on the outer side in the radial direction of the frame body 74 .

In addition, in the example of FIG. 21 , the connection parts 711c and 711d are provided on the opposite sides of each other via the processing liquid nozzle 4 on the inner side in the radial direction of the connection parts 711a and 711b. The connection parts 711c and 711d also have a circular arc-like plate shape with the rotation axis Q1 as the center. The connection parts 711a, 711c, 711d, and 711b are arranged in this order from one side to the other side in the longitudinal direction of the first electrode 71 (from the left side to the right side in FIG. 21).

The ends of the odd-numbered first electrodes 71 are connected to each other by the connection portion 711a. That is, these first electrodes 71 extend from the connecting portion 711a toward the connecting portion 711b along the longitudinal direction. In addition, the plurality of (two in FIG. 21 ) first electrodes 71 also extend from the connecting portion 711d toward the connecting portion 711b along the longitudinal direction. Each of the first electrodes 71 connected to the connection portion 711d is aligned with the corresponding first electrode 71 connected to the connection portion 711a on a straight line.

The ends of the even-numbered first electrodes 71 are connected to each other by the connecting portion 711b. That is, these first electrodes 71 extend from the connecting portion 711b toward the connecting portion 711a along the longitudinal direction. In addition, a plurality of (two in FIG. 21 ) first electrodes 71 also extend from the connecting portion 711c toward the connecting portion 711a along the longitudinal direction. Each of the first electrodes 71 connected to the connection portion 711c is aligned with the corresponding first electrode 71 connected to the connection portion 711b on a straight line.

The connection parts 711 a and 711 d are connected to the first output terminal 81 of the power supply 80 , and the connection parts 711 b and 711 c are connected to the second output terminal 82 of the power supply 80 . Thereby, potentials of different polarities are applied to the first electrodes 71 adjacent to each other in the arrangement direction.

In addition, although the illustration is omitted in the example of FIG. 21 , a dielectric protection member 72 for protecting the first electrodes 71 may also be provided, and a dielectric partition member 73 may also be provided between the first electrodes 71 . In the case where the gas collides with the connecting portions 711 c and 711 d , the connecting portions 711 c and 711 d may also be covered by the dielectric protection member 72 .

The gas system from the gas dividing flow paths 61 a and 61 b is supplied to the main surface of the substrate W through the plurality of first electrodes 71 in the frame 74 . When the gas passes through the electric field space between the plurality of first electrodes 71 formed by the first electrode group 7, a part of the gas is ionized to generate plasma. Various active species are generated when the plasma is generated, and the active species are supplied to the main surface of the substrate W along the flow of the gas.

Since the first gas flow path 60 (gas division flow paths 61 a, 61 b ) of the first plasma generating unit 5A is formed so as to surround the processing liquid nozzle 4 and the first electrode group 7 surrounds the processing liquid nozzle 4 Since it is provided in such a way, the active species can be supplied to the main surface of the substrate W over the entire circumference in the circumferential direction. In addition, in the above-mentioned example, the outer diameter of the portion directly in front of the first electrode group 7 in the first gas flow path 60 of the first plasma generating unit 5A is equal to or larger than the diameter of the substrate W, and the outer diameter of the portion around the first electrode group 7 The overall diameter of the electric field space is also equal to or larger than the diameter of the substrate W, and the inner diameter of the frame body 74 is also equal to or larger than the diameter of the substrate W. Such a first plasma generating unit 5A can supply active species to substantially the entire surface of the substrate W except for the central portion excluding the center portion. Thereby, the processing capability of the processing liquid can be improved in a wider range, and the processing time of the substrate W can be shortened.

In addition, since the nozzle head 3A faces the entire main surface of the substrate W in the vertical direction, the nozzle head 3A can function as a barrier plate. Therefore, the atmosphere between the substrate W and the nozzle head 3 can be suppressed from spreading to, for example, a space vertically above the nozzle head 3A.

FIG. 22 is a plan view schematically showing another example of the configuration of the first electrode group 7 according to the fifth embodiment. In the example of FIG. 22 , the plurality of first electrode groups 7 are provided in the circumferential direction with an interval therebetween. Here, the eight first electrode groups 7a to 7h are provided at equal intervals in the circumferential direction.

In each of the first electrode groups 7 , the plurality of first electrodes 71 are arranged in a posture such that the longitudinal direction of the plurality of first electrodes 71 is along the radial direction, and the plurality of first electrodes 71 are spaced apart from each other in the short side direction. configured at intervals. In the example of FIG. 22 , the lengths of the plurality of first electrodes 71 are substantially equal to each other. In each of the first electrode groups 7 , the ends of the first electrodes 71 arranged in odd numbers from one side in the arrangement direction on one side in the longitudinal direction are connected to each other by the connection portion 711 a , and the ends arranged in even numbers are connected to each other by connecting portions 711 a The ends on the other side in the longitudinal direction of the first electrodes 71 are connected to each other by the connection portion 711b. The connection portion 711b is provided adjacent to the processing liquid nozzle 4, and the connection portion 711a is located radially outward of the connection portion 711b, and is provided radially outward of the frame body 74 in the example of FIG. 22 . The connecting portion 711 a is connected to the first output end 81 of the power source 80 , and the connecting portion 711 b is connected to the second output end 82 of the power source 80 .

Each of the first electrode groups 7 may also be connected to different power sources 80 from each other. Thereby, the electric field intensity of the electric field space around the first electrode group 7 can be individually adjusted.

As described above, although the substrate processing apparatus 1 has been described in detail, the above description is merely an example in all the embodiments, and the substrate processing apparatus 1 is not limited to the embodiment. It can be construed that innumerable variations that are not illustrated can be conceived within a range that does not deviate from the spirit of the present invention. The configurations described in each of the above-described embodiments and modifications can be appropriately combined or omitted as long as they do not contradict each other.

For example, at least one of the flow path partition portion 63 , the first plate-shaped body 64 , the second plate-shaped body 66 and the dielectric partition member 73 may not be provided. In the case where the flow path partitions 63 are provided, the number of the flow path partitions 63 may be one or more. The first electrodes 71 do not necessarily need to be disposed on the same plane, and the vertical positions of the first electrodes 71 may be different from each other.

In addition, the treatment of the substrate W is not limited to the resist removal treatment. For example, it can be applied to all treatments that can improve the treatment capacity of the treatment liquid by the active species. In other words, the type of gas to be supplied to the first plasma generating unit 5 and the second plasma generating unit 500 is selected according to the processing liquid in such a way that the active species can improve the processing capability of the processing liquid.

1: Substrate processing device 2: Substrate holding part 3,3A: Nozzle head 4,4A: Treatment fluid nozzle 4a: ejection port 5,5A: The first plasma generating unit 6: The first unit body 7,7a to 7h,7A: first electrode group 8: Cover 21: Pedestal 22: Fixtures 23: Rotary Mechanism 30,300: Head moving mechanism 41: Treatment liquid supply pipe 42, 52, 52a, 52b, 52c, 520: Valve 43: Treatment liquid supply source 50: Gas supply part 51, 51a, 51b, 51c, 510: Gas supply pipes 53: Gas supply source 60: First gas flow path 61, 61a to 61c: Gas division flow path 62, 62a, 62b, 62c: Gas supply flow path 63, 63a, 63b: Flow Path Partitions 64, 64a, 64b: first plate 65: Block the door 66: Second plate 67: Drive Department 71, 71a to 71f: first electrode 72,720: Dielectric protective components 73: Dielectric partition member 74: Frame 80: Power 81: The first output terminal 82: The second output terminal 83,84: Resistors 90: Control Department 91: Data Processing Department 92,921,922: Memory Media 93: Busbar 100: Substrate Handling Systems 101: Load port 110: Index Robot 120: Main handling robot 130: Processing unit 231: Motor 232: Shaft 500: The second plasma generating unit 600: The second unit body 601: Side 605: Upper surface 605a: Through hole 606: Sidewall 610: Second gas flow path 610a: Outflow 620: Cylindrical body 621, 621a, 621b, 621c: Upstream ports 622, 622a to 622c: Downstream ports 630: Inflow Department 641: first opening, second opening (opening) 650: Encapsulation Department 661: The first outflow port, the second outflow port (outflow port) 700: Second electrode group 710, 710a, 710b: Second electrode 711a to 711d: Links 800: Barrier Plate 810: Board Department 820: hanging part 850: Lifting mechanism C: Carrier Q1: Rotation axis Q2: Center axis W: substrate

FIG. 1 is a plan view schematically showing an example of the configuration of a substrate processing system. FIG. 2 is a functional block diagram schematically showing an example of the internal configuration of the control unit. 3 is a side view schematically showing an example of the configuration of the substrate processing apparatus. [ Fig. 4] Fig. 4 is a cross-sectional view schematically showing an example of the configuration of the nozzle head. [ Fig. 5] Fig. 5 is a cross-sectional view schematically showing an example of the configuration of the nozzle head. 6 is a cross-sectional view schematically showing an example of the configuration of the nozzle head. FIG. 7 is a longitudinal cross-sectional view schematically showing an example of the configuration of the nozzle head. 8 is a flowchart showing an example of the operation of the substrate processing apparatus. 9 is a cross-sectional view schematically showing another example of the configuration of the first electrode group. 10 is a cross-sectional view schematically showing another example of the configuration of the nozzle head. 11 is a side cross-sectional view schematically showing an example of the configuration in the vicinity of the outflow port of the first gas flow path. 12 is a cross-sectional view schematically showing another example of the configuration of the nozzle head. 13 is a plan view schematically showing another example of the configuration of the first electrode group. 14 is a plan view schematically showing another example of the configuration of the first electrode group. 15 is a plan view schematically showing another example of the configuration of the first electrode group. 16 is a cross-sectional view schematically showing another example of the configuration of the nozzle head. 17 is a cross-sectional view schematically showing an example of the configuration of the second plasma generating unit. 18 is a cross-sectional view schematically showing another example of the configuration of the nozzle head. 19 is a cross-sectional view schematically showing another example of the configuration of the substrate processing apparatus. 20 is a cross-sectional view schematically showing another example of the configuration of the substrate processing apparatus. 21 is a cross-sectional view schematically showing another example of the configuration of the first electrode group. 22 is a cross-sectional view schematically showing another example of the first electrode group.

3: Nozzle head

4: Treatment liquid nozzle

4a: ejection port

5: The first plasma generating unit

6: The first unit body

7: The first electrode group

41: Treatment liquid supply pipe

42, 52, 52a, 52c: Valves

50: Gas supply part

51, 51a, 51c: Gas supply pipes

60: First gas flow path

61, 61a to 61c: Gas division flow path

62, 62a, 62c: Gas supply flow path

63, 63a, 63b: Flow Path Partitions

64, 64a, 64b: first plate

71, 71a to 71f: first electrode

72: Dielectric protection components

73: Dielectric partition member

74: Frame

601: Side

621, 621a, 621c: Upstream ports

641: first opening, second opening (opening)

Q1: Rotation axis

W: substrate

Claims (17)

A substrate processing device is provided with: a substrate holding portion for rotating the substrate around a rotation axis passing through the center portion of the substrate while holding the substrate; a processing liquid nozzle for ejecting a processing liquid toward the main surface of the substrate held by the substrate holding portion; and The first plasma generating unit is arranged at a position adjacent to the processing liquid nozzle when viewed from above along the rotation axis; The aforementioned first plasma generating unit includes: The first electrode group has a plurality of first electrodes, and when viewed from above, the plurality of first electrodes are arranged at intervals from each other; and The first unit body forms a first gas flow path, and the first gas flow path is used to make the gas flow toward the first electrode group from vertically above; The first plasma generating unit supplies the gas that has passed through the first electrode group to the main surface of the substrate held by the substrate holding portion. The substrate processing apparatus according to claim 1, wherein the first plasma generating unit further includes: a dielectric partition member disposed between the plurality of first electrodes. The substrate processing apparatus according to claim 1 or 2, wherein the first plasma generating unit supplies the gas from the center portion of the substrate to an area larger than a radius of the substrate including the peripheral portion. The substrate processing apparatus according to claim 1 or 2, wherein the first unit body system comprises: a flow path partition part which partitions the first gas flow path into a plurality of gas division flow paths when viewed from above. The substrate processing apparatus according to claim 3, further comprising: a gas supply unit for supplying the gas to the first gas flow path; The processing liquid nozzle sprays the processing liquid toward the central portion of the main surface of the substrate; The plurality of the aforementioned gas division flow paths include a first gas division flow path and a second gas division flow path; The distance between the first gas splitting flow path and the rotation axis is shorter than the distance between the second gas splitting flow path and the rotation axis; The gas supply unit supplies the first gas split flow to the first gas split flow so that the first flow velocity of the gas in the first gas split flow passage becomes higher than the second flow velocity of the gas in the second gas split flow passage The gas is supplied to the channel and the second gas division channel. The substrate processing apparatus according to claim 4, wherein the first unit body is formed with: a plurality of gas supply flow paths for supplying gas to one of the gas division flow paths among the plurality of gas division flow paths; The downstream ports of the plurality of gas supply flow paths are connected to one of the gas division flow paths among the plurality of gas division flow paths at positions different from each other in plan view. The substrate processing apparatus according to claim 1 or 2, wherein the first unit body system further comprises: a first plate-shaped body provided in the first gas flow path on the upstream side of the first electrode group, and There are a plurality of openings opposite to the first electrode group. The substrate processing apparatus according to claim 7, wherein the processing liquid nozzle sprays the processing liquid toward the center portion of the main surface of the substrate; The plurality of aforementioned openings include a first opening and a second opening; The distance between the first opening and the rotation axis is shorter than the distance between the second opening and the rotation axis; The area of the first opening is smaller than the area of the second opening. The substrate processing apparatus according to claim 1 or 2, wherein the first unit body system further includes a shutter for closing the outflow port of the first gas flow path provided on the downstream side of the first electrode group. Open and close. The substrate processing apparatus according to claim 9, wherein the first unit body system further comprises: a second plate-shaped body having a plurality of outflow ports as the outflow ports of the first gas flow path. The substrate processing apparatus according to claim 10, wherein the processing liquid nozzle sprays the processing liquid toward the central portion of the main surface of the substrate; The plurality of the aforementioned outflow ports include a first outflow port and a second outflow port; The distance between the first outflow port and the rotation axis is shorter than the distance between the second outflow port and the rotation axis; The area of the first outflow port is smaller than the area of the second outflow port. The substrate processing apparatus according to claim 1 or 2, wherein the processing liquid nozzle sprays the processing liquid toward the center portion of the main surface of the substrate; The distance between the first electric field space and the rotation axis in the electric field spaces between the plurality of the electrodes is shorter than the distance between the second electric field space and the rotation axis in the electric field space; An electric field is applied to the first electric field space with an electric field intensity higher than that of the electric field applied to the second electric field space. The substrate processing apparatus according to claim 12, wherein the magnitude of the voltage applied between the two electrodes for forming the first electric field space among the plurality of electrodes is higher than that applied to the plurality of the electrodes. The magnitude of the voltage between the two electrodes used to form the second electric field space is also larger. The substrate processing apparatus according to claim 12, wherein a spacing factor of two of the plurality of the electrodes for forming the first electric field space is greater than that of two of the plurality of the electrodes for forming the second electric field space The distance between the electrodes is also narrow. The substrate processing apparatus according to claim 1 or 2, further comprising a second plasma generating unit; The aforementioned second plasma generating unit includes: The second electrode group has a plurality of second electrodes; and The second unit body forms a second gas flow path, and the second gas flow path is used for making the gas flow toward the second electrode group; The second plasma generating unit supplies the gas that has passed through the second electrode group to the processing liquid before it is ejected from the processing liquid nozzle and impinges on the main surface of the substrate. The substrate processing apparatus according to claim 1 or 2, wherein the first plasma generating unit surrounds the processing liquid nozzle when viewed from above, and forms a blocking plate together with the processing liquid nozzle; The barrier plate is provided vertically above the upper surface of the substrate held by the substrate holding portion, and faces the upper surface of the substrate in the vertical direction. The substrate processing apparatus according to claim 1 or 2, wherein a plurality of the first electrode groups are provided; A plurality of the first electrode groups are arranged in a row in the circumferential direction of the rotation axis.

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