TW202217250A - Thin film thermocouple element, temperature measuring element, and method for manufacturing thin film thermocouple element - Google Patents

Abstract

The present invention addresses the problem of providing a thin film thermocouple element with which differences in temperature characteristics are small, and which can be replaced with respect to a connector. This problem is resolved by means of a thin film thermocouple element characterized by being provided with a base plate 10, and a thermocouple which is formed on the base plate 10 by means of a first electrically conductive thin film 11 comprising chromel and a second electrically conductive thin film 12 comprising alumel, and which has a temperature measurement contact 18 on one end side and is provided on the other end side with thin film external connecting points 20, 21, wherein the arithmetic mean height (Sa) of the surface of the first electrically conductive thin film 11 is at most equal to 1.0 nm, and the arithmetic mean height (Sa) of the surface of the second electrically conductive thin film 12 is at most equal to 2.0 nm.

Description

Thin film thermocouple element, temperature measuring element and method for manufacturing thin film thermocouple element

The present invention relates to a thin-film thermocouple element, a temperature-measuring element, and a method for manufacturing the thin-film thermocouple element, and in particular, to a replaceable thin-film thermocouple element, a temperature-measuring element utilizing the thin-film thermocouple element, and a manufacturing method for the thin-film thermocouple element .

An element made of a combination of two metals produced for temperature measurement is called a thermocouple, and it is a technology that has been used as a temperature measurement element using the Seebeck effect from the past. As a thin and flexible temperature sensor, there is a thin film thermocouple. Thin-film thermocouple elements are made of heat-resistant film and conductive film, and can measure the temperature in small, narrow and complicated places.

Patent Document 1 describes a technique in which a temperature measuring element is provided with a thin-film thermocouple made of the same constituent material and connected with the same length in the vicinity of the connection portion of the external metal for signal extraction of the thin-film thermocouple. Thermocouple for correction of external wires. In this technique, the temperature measurement error caused by connecting the thin-film thermocouple to the bulk material is reduced by using a temperature measuring element to perform operations using a predetermined calculation formula. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2010-190735

[The problem to be solved by the invention]

Generally, thin film thermocouple elements with connectors are expensive, but difficult to replace when the thin film thermocouple elements combined with the connectors are damaged. Therefore, it is expected that only the thin-film thermocouple element can be replaced with the connector.

In order to make the thin-film thermocouple element replaceable, the difference in the temperature characteristics between the elements must be small. However, in the prior art, the temperature characteristics between the elements exceed the allowable range, and the temperature of the thin-film thermocouple element must be changed every time. The meter is calibrated.

The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a thin-film thermocouple element which has a small difference in temperature characteristics and can be replaced with a connector, a temperature measuring element using the thin-film thermocouple element, and production of the thin-film thermocouple element method. [Technical means to solve the problem]

The above-mentioned problem can be solved by the following: the thin-film thermocouple element according to the present invention includes: a substrate; 2. The conductive thin film is formed, and has a temperature measurement contact on one end side and an external connection point of each thin film on the other end side, and the arithmetic mean height (Sa) of the surface of the first conductive thin film is 1.0 nm or less, and the above The arithmetic mean height (Sa) of the surface of the second conductive thin film is 2.0 nm or less. With the above configuration, the difference in temperature characteristics between different thin-film thermocouple elements can be reduced and the connector can be replaced with a thin-film thermocouple element.

In this case, it is preferable that a reinforcing member is provided on the other end side of the above-mentioned substrate on the opposite side to the above-mentioned external connection point. As described above, by providing the reinforcing member, the strength of the connection portion of the thin-film thermocouple element is improved, and the connectivity with the connector is improved.

The above problem can be solved by the following: a temperature measuring element according to the present invention includes: the above-mentioned thin-film thermocouple element; a pair of compensation wires connected to the external connection points of the above-mentioned thin-film thermocouple element; and a second thermocouple connected to the above-mentioned thin film thermocouple element There is a contact in the vicinity of the separation of the external connection points, which is composed of a pair of metal wires, the pair of compensation wires and the pair of metal wires of the second thermocouple are composed of the same combination of materials, the first conductive film and the first conductive film. 2. The material of the conductive thin film is composed of the same combination of material as a pair of metal wires connected to the external connection point of the above-mentioned thin film thermocouple element.

In this case, it is preferable to have a connector that accommodates the external connection point and the pair of compensation wires connected by the external connection point, and the contact of the second thermocouple is connected to each of the external connection points. Separated on the same line, and integrally arranged in the above-mentioned connector.

The above-mentioned problem can be solved by the following steps: according to the method for manufacturing a thin-film thermocouple element of the present invention, the following steps are performed: a step of preparing a substrate; In the step of forming a second conductive film composed of an alloy, a thermocouple having a temperature measurement contact on one end side and an external connection point of each film on the other end side, in the step of forming the above-mentioned thermocouple, the temperature is higher than The substrate was heated at a temperature of 100°C. With the above configuration, it is possible to obtain a thin-film thermocouple element that has a small difference in temperature characteristics between different thin-film thermocouple elements and that can be replaced with a connector.

In this case, it is preferable that the above-mentioned first conductive thin film is formed of a chromium-nickel alloy, and the above-mentioned first conductive thin film is formed of an aluminum-nickel alloy. In this case, the arithmetic mean height (Sa) of the surface of the first conductive thin film is preferably 1.0 nm or less, and the arithmetic mean height (Sa) of the surface of the second conductive thin film is preferably 2.0 nm or less. [Effect of invention]

According to the thin film thermocouple element, the temperature measuring element and the manufacturing method of the thin film thermocouple element of the present invention, it is possible to provide a thin film thermocouple element in which the difference in temperature characteristics between different thin film thermocouple elements is reduced, the connector can be replaced, and Use the temperature measuring element of the thin film thermocouple element.

The thin film thermocouple element and the temperature measuring element according to the embodiment (this embodiment) of the present invention will be described with reference to the drawings. In addition, the material, arrangement, constitution, etc. described below do not limit the present invention, and various modifications can be made within the scope of the gist of the present invention.

<Thin film thermocouple element 1> FIG. 1 is a schematic view of a thin-film thermocouple element 1 according to an embodiment of the present invention. In FIG. 1 , the first conductive thin film 11 and the second conductive thin film 12 are made of dissimilar materials, respectively, and are joined by the temperature measuring contacts 18 of the thin film thermocouple element 1 . The temperature measuring contact 18 of the thin film thermocouple element 1 is joined so that the first conductive thin film 11 and the second conductive thin film 12 are overlapped.

The thin-film thermocouple element 1 is a replaceable element, and is constructed so as to be detachable to and detachable from the connector 2 . The temperature measuring element H ( FIG. 2 ) is formed by combining the thin film thermocouple element 1 and the connector 2 . The connector 2 combined with the thin film thermocouple element 1 is not particularly limited as long as the thin film thermocouple element 1 can be attached and detached, and the method of attaching the element is not particularly limited.

Also, as shown in FIG. 3 , the first conductive film 11 and the second conductive film 12 are connected to the first conductive film 18 at the external connection points 20 and 21 of the connection end portion 10 a on the opposite side of the temperature measurement contact 18 and the first conductive film 12 . The thin film 11 and the second conductive thin film 12 are bonded by the same metal wire. In addition, in the thin film thermocouple element 1, a first conductive thin film 11 and a second conductive thin film 12 are provided on the substrate 10, and a temperature measuring contact 18 for measuring the temperature of the object is provided at one end thereof, and at the other end thereof. One end is provided with external connection points 20 and 21 for each thin film pattern that becomes an open end. The first compensation wire 13 and the second compensation wire 14 are connected to the external connection points 20 and 21 of the thin film thermocouple element 1 .

Furthermore, there is a temperature measuring junction 19 of a correction thermocouple made of other thin metal wires in the vicinity of the external connection points 20 and 21, and each of the first compensation wire 13 and the second compensation wire 14 of the thin film thermocouple element 1 is connected to the correction The same material is used for each of the first metal wires 15 and the second metal wires 16 of the thermocouple. In addition, in the temperature measuring element H, the materials of the first conductive film 11 and the second conductive film 12 of the thin film thermocouple element 1 are preferably the same as those of the first compensation wire 13 and the second compensation wire 14, respectively. Material, the external connection points 20 and 21 and the temperature measuring contact 19 of the correction thermocouple are arranged in the integrated connector 2 (FIG. 3). By arranging the temperature measuring contact 19 of the correction thermocouple in the vicinity of the external connection points 20 and 21 of the thin film thermocouple element 1, a simple temperature measuring element can be formed, and an accurate temperature can be measured. At this time, each thermocouple is connected to the first compensation wire 13 and the second compensation wire 14 , the first metal wire 15 and the second metal wire 16 , which are connected by the calculation unit 17 a including the CPU (calculation circuit) and the connecting wire 17 c. The calculation result display unit 17b.

As the substrate 10 on which the thin-film thermocouple element 1 is formed, glass, film, metal, or the like can be used. However, when the substrate 10 is made of a conductive material such as metal, it is necessary to form an insulating film such as SiO ₂ and Al ₂ O ₃ on the surface of the metal in advance to form a thin-film thermocouple. Therefore, it is preferable to use a film. Since glass and film do not need to be pretreated like metal and other conductive substrates, the operation is not complicated, which is preferable. Also, the membrane can increase the strength of the temperature measuring element due to its flexibility. Furthermore, it is preferable to use a polyimide film. Polyimide film is a suitable material for the substrate of thin film thermocouples in the following points: it can be bent, even if the thickness of the substrate is set to several tens of microns, it is not easily damaged and easy to handle; even at temperatures exceeding 200°C relatively stable.

The thickness of the substrate 10 is preferably 1 μm or more and 150 μm or less, more preferably 1 μm or more and 50 μm or less, and particularly preferably 1 μm or more and 18 μm or less.

As a combination of dissimilar metals constituting the first conductive thin film 11 and the second conductive thin film 12 of the thin film thermocouple element 1, inconel-aluminum, PtRh-Pt, inconel-constantan can be used , NiCrSi-NiSi, Cu-Constantan, Fe-Constantan, Ir-IrRh, W-Re, Au-Pt, Pt-Pd, Bi-Sb, etc. It is better to use a combination of chrome-nickel alloy and aluminum-nickel alloy with a large temperature range and a linear relationship between temperature and thermal electromotive force (for example, the first conductive film 11 is a chrome-nickel alloy, and the second conductive film 12 is used. is an aluminum-nickel alloy).

The thickness of the first conductive thin film 11 and the second conductive thin film 12 is preferably 10 nm or more and 1 μm or less, more preferably 100 nm or more and 700 nm or less, and more preferably 150 nm or more and 550 nm or less.

As a method of forming the first conductive thin film 11 and the second conductive thin film 12 , a vacuum film formation method such as sputtering, electron beam deposition, and thermal deposition, or a coating method can be used. It is preferable to use the vacuum film-forming method which can form a thin film uniformly. Furthermore, it is preferable to use the sputtering method which has little variation in the atomic composition of the vapor deposition material and can form a uniform film.

The thin-film thermocouple element 1 is preferably covered with a protective film P. The reason for this is that the protective film P improves the environmental resistance of the thin-film thermocouple element 1 and also has the effect of preventing the occurrence of cracks which are feared when the thin-film thermocouple element 1 is deformed by external force. The protective film P that can be applied is an insulating film formed of SiO ₂ , Al ₂ O ₃ or the like by a vapor deposition method, a sputtering method, a dipping method, or the like, a polyimide film formed by a screen printing method, or the like. It is preferable to use a polyimide film with high heat resistance and chemical resistance and high adhesiveness.

In addition, in the connection end portion 10a of the substrate 10, it is preferable that the external connection points 20 and 21 are provided with a reinforcing member G on the opposite side. The material of the reinforcement member G is not specifically limited, For example, epoxy glass can be used. With the reinforcing member G, the strength of the thin-film thermocouple element 1 is improved, and the connectivity with the connector 2 is improved.

FIG. 3 is a schematic diagram of thermoelectromotive force and temperature difference of each thermocouple when the thin-film thermocouple element 1 is used. _Va is relative to the external connection points 20 and 21 of the first compensation wire 13 and the second compensation wire 14 and the first conductive film 11 and the second conductive film 12 and the first conductive film 11 and the second conductive film 12 The thermoelectromotive force of the thin-film thermocouple element 1 generated by the temperature difference ΔT _a between the two points of the temperature-measuring contact 18 of the thin-film thermocouple element 1 at the external connection point of the thin-film 12 . Here, the premise is that the external connection points 20 and 21 are close to each other, and the temperature of the environment of the external connection points 20 and 21 is stable.

V _b is a thermoelectromotive force generated with respect to the temperature difference ΔT _b between the temperature measuring contacts 19 and the temperature indicator 17 of the first metal wire 15 and the second metal wire 16 serving as the correction thermocouple.

In the first compensation wire 13 and the second compensation wire 14 connected to the thin film thermocouple element 1 , there is also a temperature difference ΔT _b between the external connection points 20 and 21 of the thin film thermocouple element 1 and the temperature indicator 17 . , so the thermoelectromotive force V _b is generated in the first compensation wire 13 and the second compensation wire 14 . If the temperature of the temperature indicator 17 is set as T _c , the temperature T of the temperature measuring junction 18 of the thin film thermocouple element 1 is T=ΔT _a +ΔT _b +T _c . Also, at this time, the thermoelectromotive force V generated by the closed circuit between the temperature measuring contact 18 of the thin film thermocouple element 1 and the temperature indicator 17 is V=V _a +V _b .

It should be noted here that in the thin film thermocouple element 1, the thermoelectromotive force generated with respect to a certain temperature difference ΔT _o is the same as that in the thermocouple formed by the metal wire of the same material as the thin film thermocouple element 1 with respect to the temperature difference ΔT. _oThe thermoelectromotive force generated is not equal. Therefore, even if the thermoelectromotive force V is measured using a thermometer, the temperature T of the temperature measuring junction 18 of the thin film thermocouple element 1 cannot be uniquely determined from the obtained thermoelectromotive force.

In the present embodiment, in the vicinity of the external connection points 20 and 21 of the first conductive film 11 and the second conductive film 12 and the first compensation wire 13 and the second compensation wire 14, the first compensation wire 13 and the first compensation wire 14 are provided. The second compensation wire 14 is made of a metal wire of the same material as the temperature measuring junction 19 of the correction thermocouple, and the thermoelectromotive force of the correction thermocouple is measured. Thereby, V _b can be obtained, and the thermoelectromotive force V _a generated by the conductive thin film can be obtained by subtracting V _b from the thermoelectromotive force V generated by the closed circuit of the thin film thermocouple element 1 side.

In addition, in the first metal wire 15 and the second metal wire 16, when a combination of materials different from those of the first compensation wire 13 and the second compensation wire 14 is used, the thermoelectromotive force V _b cannot be accurately evaluated, and it is impossible to Calculate the exact temperature.

The output of the temperature measuring contact 18 of the thin film thermocouple element 1 is set to V ₁ , the output of the temperature measuring contact 19 of the correction thermocouple is set to V ₂ , and the temperature of the measuring device under zero compensation is set to T _c When , the temperature T of the temperature measuring junction 18 of the thin film thermocouple element 1 is T=aV ₁ +bV ₂ +T _c (wherein, the parameters a and b are the approximations obtained from the relationship between the temperature difference and the generated thermoelectromotive force value calculated from the curve).

At this time, when the difference in temperature characteristics between different thin-film thermocouple elements 1 is large, it is found that the individual differences of the parameters a and b as correction coefficients are large and cannot be substituted.

The inventors of the present application have repeatedly conducted intensive studies, and found that, in the method for producing the thin-film thermocouple element 1, a first conductive thin film composed of a chromium-nickel alloy and a second conductive thin film composed of an aluminum-nickel alloy are formed on a substrate. When the substrate is heated at a temperature higher than 100° C., specifically 150° C. in the step of forming a thermocouple by forming a thin film, the difference in temperature characteristics between different thin-film thermocouple elements 1 is reduced.

At this time, regarding the thin film thermocouple element 1 whose temperature characteristic difference becomes smaller, it can be seen from the parameter of the surface roughness (ISO 25178) that the arithmetic mean height (Sa ) is 1.0 nm or less (preferably 0.95 nm or less, more preferably 0.9 nm or less), and the arithmetic mean height (Sa) of the surface of the second conductive thin film made of aluminum-nickel alloy is 2.0 nm or less (preferably 1.9 nm or less, more preferably 1.8 nm or less).

The arithmetic mean height (Sa) is a three-dimensional roughness parameter (three-dimensional height direction parameter) that expands the two-dimensional roughness parameter, that is, the arithmetic mean roughness (Ra) to three-dimensional. The arithmetic mean height (Sa) represents the average value of the absolute value of the difference between the heights of the points in the measurement target area. The arithmetic mean height (Sa) may be, for example, a value calculated using an atomic force microscope (AFM) as an average value of an observation area of 1 μm×1 μm or 3 μm×3 μm.

<Manufacturing method of thin film thermocouple element> The manufacturing method of the thin film thermocouple element of the present embodiment is characterized in that the following steps are performed: a step of preparing the substrate 10 (step S1 ); and forming the first conductive thin film 11 and the second conductive thin film 12 on the substrate 10 , In the step of forming a thermocouple having the temperature measuring contact 18 on one end side and the external connection points 20 and 21 of each thin film on the other end side (step S2 ), in the step of forming the thermocouple, the temperature is higher than 100° C. The temperature heats the substrate 10 .

The step of forming the thermocouple (step S2 ) is preferably performed by a sputtering method that has little variation in the atomic composition of the vapor deposition material and can form a uniform film. In this case, it is preferable to use a polyimide film as a substrate, and the temperature is higher than 100°C, preferably 120°C or higher, more preferably 130°C or higher, still more preferably 140°C or higher, particularly preferably 150°C Heating is performed above. In addition, the upper limit of the heating temperature of the substrate depends on the material of the substrate, the film quality of the chromium-nickel alloy film or the aluminum-nickel alloy film to be formed, and may be below 250°C, preferably below 230°C, more preferably below 210°C , and more preferably 200°C or lower.

According to the method for manufacturing a thin-film thermocouple element of the present embodiment, the arithmetic mean height (Sa) of the surface of the first conductive thin film (preferably made of a chrome-nickel alloy) of the obtained thin-film thermocouple element is 1.0 nm or less, It is preferably 0.95 nm or less, more preferably 0.9 nm or less, and the arithmetic mean height (Sa) of the surface of the second conductive film (preferably made of an aluminum-nickel alloy) is 2.0 nm or less, preferably 1.9 nm or less, More preferably, it is 1.8 nm or less. [Example]

Hereinafter, specific examples of the thin-film thermocouple element and the manufacturing method of the thin-film thermocouple element of the present invention will be described, but the present invention is not limited thereto.

<A. Production of thin-film thermocouple element> On the polyimide base as a substrate, a conductive thin film was formed by a composite lamination of chromium-nickel alloy and aluminum-nickel alloy under the following conditions. Sputtering device: Rotary rack type batch sputtering device Target: 5 inches × 25 inches, Inconel-Al-Ni alloy Sputtering method: DC magnetron sputtering Exhaust device: turbo molecular pump ultimate vacuum degree : 2～5×10 ^-4 Pa Substrate temperature: 25℃ (room temperature) or 150℃ (set value) Sputtering power: 7.5 kW Film thickness of conductive film: 300～500±10 nm Ar flow rate: 250sccm Substrate: Polyimide (PI) film substrate (50 μm thick)

<B. Measurement of Surface Roughness> The surface roughness of the electroconductive thin film in each produced thin-film thermocouple element was evaluated. Specifically, using an atomic force microscope (AFM, manufactured by Bruker AXS, Innova), the arithmetic mean height (Sa) and the maximum height (Sz), which are parameters of the surface roughness (ISO 25178) of each sample surface, were measured under the following measurement conditions. ), kurtosis (Sku) and skewness (skewness, Ssk). The results are shown in FIG. 4 , FIG. 5 and Table 1. FIG. Measurement mode: Tapping Input Gain: ×20 Target Tapping Signal: 2 V Scan Range: 3 μm×3 μm or 1 μm×1 μm Scan Rate: 0.3 Hz Line: 256 Closed Loop: ON

[Table 1] Sample name S _a (nm) S _z (nm) _Sku S _sk example 1 Chrome-nickel alloy, 150℃, 3 μm 0.846 16.4 6.64 1.13 Example 2 Chrome-nickel alloy, room temperature, 3 μm 1.31 19.0 5.48 1.22 Example 3 Al-Ni alloy, 150℃, 3 μm 1.71 35.2 10.9 1.78 Example 4 Al-Ni alloy, room temperature, 3 μm 2.78 32.5 3.48 0.676 Example 5 Chrome-nickel alloy, 150℃, 1 μm 0.901 11.4 5.56 1.01 Example 6 Chromium-nickel alloy, room temperature, 1 μm 1.37 19.2 5.48 1.09 Example 7 Al-Ni alloy, 150℃, 1 μm 1.69 29.8 12.4 1.95 Example 8 Al-Ni alloy, room temperature, 1 μm 2.62 25.5 3.51 0.529

As for the samples obtained by heating the substrate at 150°C, the arithmetic mean height (Sa) of the surface of the conductive thin film was 1.0 nm or less in the chromium-nickel alloys (Examples 1 and 5), and was less than 1.0 nm in the aluminum-nickel alloys (Examples 3 and 5). In Example 7), it is 2.0 nm or less. In addition, with regard to the samples of the unheated substrate (room temperature, 25°C), the arithmetic mean height (Sa) of the surface of the conductive thin film was 1.3 nm or more in the chromium-nickel alloys (Examples 2 and 6), and was 1.3 nm or more in the aluminum-nickel alloys. (Examples 4 and 8), it is 2.6 nm or more.

<C. Measurement of temperature characteristics> Using chrome-nickel alloy-aluminum-nickel alloy as the material for the conductive thin film constituting the thin film thermocouple element, the substrate temperature was set to 100°C or 150°C (set value), and according to the above conditions, sputtering was performed on the substrate as the substrate. A thin film thermocouple is formed on the polyimide film. Furthermore, a polyimide film different from the substrate was attached to the formed thin-film thermocouple, and this was used as a protective film.

FIG. 6 is a graph showing the temperature characteristic values of each thin-film thermocouple element based on a conventional K-type thermocouple element. The data shown in FIG. 6 are the results obtained by preparing 2 sheets respectively at the heating temperature of the substrate at 100°C and 150°C. The electromotive force of the thin film thermocouple element is 70-80% of that of the entire thermocouple element, so in order to obtain an accurate temperature, it must be corrected. Measure the temperature of the temperature measuring junction of the thin film thermocouple element and the connector part (ie, the external connection point), and calculate the actual temperature according to the two measured values. When setting the actual temperature = {T (film) - T (connector)}/a + T (connector), a = (the slope of the temperature characteristic of the film thermocouple) / (the slope of the temperature characteristic of the K-type thermocouple) ( The slope of the temperature characteristic is the slope calculated from a graph that plots the relationship between electromotive force and temperature). The vertical axis of FIG. 6 corresponds to the value of a.

It can be seen that when the conductive thin film of chromium-nickel alloy-aluminium-nickel alloy is formed on a polyimide substrate, when the substrate temperature is 100°C or lower, the temperature characteristics of each element are greatly different. On the other hand, when the conductive thin film is formed, by setting the substrate temperature to be more than 100°C, specifically 150°C or more, the temperature characteristics between the elements are substantially uniform (±0.0075 on the vertical axis in FIG. 6 ). , converted to a temperature within the range of ±1°C).

＜D.Summary＞ From the above results, it can be seen that in the method of manufacturing a film thermocouple element, the thermocouple is formed by forming the first conductive thin film made of chrome-nickel alloy and the second conductive thin film made of aluminum-nickel alloy on the substrate. If the substrate is heated at a temperature higher than 100° C., specifically 150° C., the difference in temperature characteristics between different thin-film thermocouple elements becomes smaller.

At this time, in the thin-film thermocouple element, the arithmetic mean height (Sa) of the surface of the first conductive thin film composed of chromium-nickel alloy is 1.0 nm or less, and the arithmetic mean height (Sa) of the surface of the second conductive thin film composed of aluminum-nickel alloy is 1.0 nm or less. The average height (Sa) is less than 2.0 nm, indicating that the film quality of the chromium-nickel alloy film or the aluminum-nickel alloy film is stable, and the difference in electromotive force is reduced. [Industrial Availability]

By using the thin film thermocouple element and the temperature measuring element of the present invention, the thin film thermocouple element can be replaced. The field of application of temperature measurement using thin-film thermocouple elements is not particularly limited, and it is possible to appropriately perform temperature measurement of extremely small parts, such as fuel cells, heating rollers, hot pressing, heating temperature of electronic circuit parts, chemical reaction temperature, and instantaneous heating. temperature etc.

H: temperature measuring element 1: Thin film thermocouple element P: Protective film G: Reinforcing member 2: Connector 10: Substrate 10a: Connection end 11: The first conductive film 12: Second conductive film 13: The first compensation wire 14: 2nd compensation wire 15: 1st metal wire 16: 2nd metal wire 17a: Operation Department 17b: Operation result display part 17c: connecting wire 18: Temperature measuring contact 19: Correction of the temperature measuring contact of the thermocouple 20: External connection point 21: External connection point

1A is a schematic diagram showing a thin-film thermocouple element according to an embodiment of the present invention. [FIG. 1B] A cross-sectional view taken along line A-A of FIG. 1A. [FIG. Fig. 2 is a schematic view of the temperature measuring element according to the embodiment of the present invention. [Fig. 3] It is a schematic diagram of thermoelectromotive force and temperature difference in thermometer measurement. Fig. 4 is an AFM image of the surface of each sample (Examples 1 to 4). Fig. 5 is an AFM image of the surface of each sample (Examples 5 to 8). Fig. 6 is a graph showing the temperature characteristic value of each thin-film thermocouple element based on a K-type thermocouple element.

Claims (7)

A thin film thermocouple element, characterized in that it has: substrate; and A thermocouple is formed on the substrate by a first conductive film made of chromium-nickel alloy and a second conductive film made of aluminum-nickel alloy, and has a temperature measurement contact on one end side and a temperature measurement contact on the other end side. External connection points of each membrane, The arithmetic mean height (Sa) of the surface of the first conductive thin film is 1.0 nm or less, The arithmetic mean height (Sa) of the surface of the said 2nd electroconductive thin film is 2.0 nm or less. The thin-film thermocouple element of claim 1, wherein a reinforcing member is provided on the opposite side of the external connection point on the other end side of the substrate. A temperature measuring element, characterized in that it has: Thin-film thermocouple elements of claim 1 or 2; a pair of compensation wires connected to the external connection points of the above-mentioned thin film thermocouple element; and The second thermocouple has a contact in the vicinity of the separation from the external connection point, and is composed of a pair of metal wires, The pair of compensation wires and the pair of metal wires of the second thermocouple are made of the same combination of materials, The materials of the above-mentioned first conductive thin film and the above-mentioned second conductive thin film are composed of the same combination of materials as a pair of metal wires connected to the external connection point of the above-mentioned thin-film thermocouple element. The temperature measuring element according to claim 3, which has a connector, and the connector accommodates the above-mentioned external connection point inside, and said pair of compensation conductors connected by said external connection point, The contacts of the second thermocouple are separated on the same line connecting the external connection points, and It is integrally arranged in the above-mentioned connector. A method of manufacturing a thin-film thermocouple element, characterized in that the following steps are performed: the steps of preparing the substrate; and A step of forming a first conductive thin film and a second conductive thin film on the above-mentioned substrate, and forming a thermocouple having a contact point for temperature measurement on one end side and an external connection point of each thin film on the other end side, In the step of forming the above-mentioned thermocouple, the above-mentioned substrate is heated at a temperature higher than 100°C. The method for producing a thin-film thermocouple element according to claim 5, wherein the first conductive thin film is made of a chromium-nickel alloy, The above-mentioned second conductive thin film is formed of an aluminum-nickel alloy. The method for manufacturing a thin-film thermocouple element according to claim 6, wherein the arithmetic mean height (Sa) of the surface of the first conductive thin film is 1.0 nm or less, and the arithmetic mean height (Sa) of the surface of the second conductive thin film is 1.0 nm or less. is 2.0 nm or less.

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