TW202214411A - Ingot cutting apparatus and ingot cutting method - Google Patents
Ingot cutting apparatus and ingot cutting method Download PDFInfo
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Description
本發明是有關於一種切割裝置及切割方法,且特別是有關於一種晶棒切割設備及晶棒切割方法。The present invention relates to a cutting device and a cutting method, and in particular, to a crystal rod cutting device and a crystal rod cutting method.
一般而言,晶棒的長成步驟大致如下:首先,加熱晶矽,以形成矽融漿;在矽融漿的溫度穩定後,將晶種注入矽融漿中,並拉升晶種;後續,歷經頸部成長、晶冠成長、晶體成長以及尾部成長等程序,便能製作得到晶棒(ingot)。Generally speaking, the growth steps of the crystal rod are roughly as follows: first, heat the crystal silicon to form a silicon melt slurry; after the temperature of the silicon melt slurry is stabilized, inject the crystal seed into the silicon melt slurry, and pull up the seed crystal; , After the neck growth, crown growth, crystal growth and tail growth and other procedures, the ingot can be produced.
然而,晶棒並無法直接製作成晶片,在此之前,必須先將晶棒切割為多片的晶圓。However, the ingot cannot be directly made into a wafer. Before that, the ingot must be cut into multiple wafers.
本發明提供一種晶棒切割設備及晶棒切割方法,其適於切割晶棒。The invention provides a crystal rod cutting device and a crystal rod cutting method, which are suitable for cutting crystal rods.
本發明的晶棒切割設備適於切割晶棒。晶棒切割設備包括滾輪組、槽體以及流體注入裝置。切割線移動地繞設於滾輪組,以適於在滾輪組旋轉時在切割方向上移動,而適於切割接觸切割線的晶棒。槽體具有環形側壁及底部,以構成容置空間。容置空間位於晶棒的下方。環形側壁的高度不一致,且環形側壁的最小高度處位於切割方向上。流體注入裝置適於將流體注入容置空間。The ingot cutting device of the present invention is suitable for cutting the ingot. The ingot cutting equipment includes a roller set, a tank body and a fluid injection device. The cutting line is movably wound around the roller set, so as to move in the cutting direction when the roller set rotates, and is suitable for cutting the ingot contacting the cutting line. The groove body has an annular side wall and a bottom to form an accommodating space. The accommodating space is located below the crystal rod. The heights of the annular side walls are not uniform, and the minimum height of the annular side walls is in the cutting direction. The fluid injection device is adapted to inject fluid into the accommodation space.
本發明的晶棒切割方法包括以下步驟。提供前述的晶棒切割設備,且藉由流體注入裝置將流體注入容置空間內。提供晶棒。旋轉滾輪組以使切割線於切割方向上移動,並使移動的切割線與晶棒相接觸以切割晶棒,且於切割晶棒時,部分的切割線浸入流體。基此,晶棒切割設備及晶棒切割方法,可適於切割晶棒。The ingot cutting method of the present invention includes the following steps. The aforementioned ingot cutting equipment is provided, and the fluid is injected into the accommodating space by the fluid injection device. Ingots are provided. The roller set is rotated to move the cutting line in the cutting direction, and the moving cutting line is brought into contact with the ingot to cut the ingot, and when cutting the ingot, part of the cutting line is immersed in the fluid. Based on this, the crystal rod cutting device and the crystal rod cutting method can be suitable for cutting the crystal rod.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。如本領域技術人員將認識到的,可以以各種不同的方式修改所描述的實施例,而不脫離本發明的精神或範圍。In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, the following embodiments are given and described in detail with the accompanying drawings as follows. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.
圖1A是依照本發明的第一實施例的一種晶棒切割設備的立體示意圖。圖1B至1F是依照本發明的一實施例的一種晶棒切割方法的側視示意圖。圖1G是依照本發明的一實施例的一種切割後的晶圓的側視示意圖。FIG. 1A is a schematic perspective view of an ingot cutting apparatus according to the first embodiment of the present invention. 1B to 1F are schematic side views of a method for cutting an ingot according to an embodiment of the present invention. 1G is a schematic side view of a diced wafer according to an embodiment of the present invention.
請參照圖1A,晶棒切割設備100適於以切割線120切割晶棒900。晶棒切割設備100包括滾輪組110、槽體130以及流體注入裝置140。滾輪組110供切割線120移動地繞設於其(滾輪組110)上。如此一來,使切割線120適於在滾輪組110旋轉時在切割方向128上單向地或往復地移動,而適於藉由切割線120切割接觸於其的晶棒900。槽體130具有環形側壁131及底部137。如此一來,環形側壁131及底部137可以構成容置空間138。在藉由切割線120切割晶棒900時,容置空間138位於晶棒900的下方。環形側壁131的高度不一致,且環形側壁131的最小高度處139位於切割方向128上。流體注入裝置140適於將流體141注入容置空間138。Referring to FIG. 1A , the
在本實施例中,晶棒900例如是矽晶棒,但本發明不限於此。舉例而言,晶棒900可以是碳化矽(SiC)晶棒、氮化鎵(GaN)晶棒或其他適宜的柱狀晶棒。In this embodiment, the
在本實施例中,滾輪組110可以包括多個滾輪111。滾輪111可以沿第一方向111a轉動;或是,滾輪111可以沿相反於第一方向111a的第二方向111b轉動。第一方向111a例如是順時針方向,且第二方向111b例如是逆時針方向。另外,在圖1A所繪示的實施例中,滾輪111的數量例如是兩個,但本發明不限於此。舉例來說,在其他實施例中,滾輪的數量可以是三或四個。In this embodiment, the
在一實施例中,每個滾輪111可以凹設有多個環狀(或稱螺旋狀)的溝槽(未繪示)。這些滾輪111的溝槽可以彼此對應。如此一來,可以使切割線120可移動地繞設於滾輪111的溝槽內。如圖1A所示,切割線120可以呈螺旋狀地繞設於滾輪組110的多個滾輪111。如此一來,切割線120可以具有多個基本上彼此平行的切割段121。切割段121可被稱為線網,但本發明不限於此。In one embodiment, each
在一實施例中,切割線120可以包括鋼琴線、鎳線、鎳合金線、鎢線、鎢合金線、銅線、銅合金線或其組合。In one embodiment, the
在一實施例中,切割線120直徑基本上介於30微米至200微米之間,但本發明不限於此。In one embodiment, the diameter of the
在一實施例中,切割線120的表面可以包括磨粒(abrasives),磨粒例如但不限於是鑽石。In one embodiment, the surface of the
在本實施例中,環形側壁131可以包括第一側壁132及第二側壁133。第一側壁132位於切割方向128上。第二側壁133連接第一側壁132。第二側壁133不位於切割方向128上。第一側壁132的高度H2小於第二側壁133的高度H3。更具體來說,第一側壁132具有等高的第一高度(即高度H2),第二側壁133具有等高的第二高度(即高度H3),且第一高度小於第二高度;因此,槽體130會在切割方向128上形成一溢流口130a。較佳地,所述溢流口130a可容納彼此平行的切割段121(即線網)。另一提的是,在其他實施例中,第一側壁132的高度也可以是不等高,其中所述不等高的高度均小於第二側壁133的高度。In this embodiment, the
在一實施例中,若藉由流體注入裝置140將流體141(如:注入的流體141體積大於容置空間138的容積)注入容置空間138時,部分的流體141可以從高度較低處(如:環形側壁131的最小高度處139,即溢流口130a)沿平行於切割方向128的方向流出容置空間138。因此,在藉由切割線120對晶棒900進行切割時,可以降低流體141在垂直於切割方向128的方向上對切割線120(即各切割段121)的施力,而降低切割線120在垂直於切割方向128的方向上的擺動或擾動。In one embodiment, if the fluid 141 (eg, the volume of the injected
在一實施例中,在流體141持續注入容置空間138的情況下,若容置空間138內已裝滿流體141,則可以使容置空間138內的流體141的液面142高於部分的側壁的高度(如:部分或全部的第一側壁132的高度H2)。In one embodiment, under the condition that the
在本實施例中,晶棒切割設備100可以更包括冷卻裝置151熱耦接於滾輪組110。在轉動滾輪組110以帶動切割線120切割晶棒900時,可以藉由冷卻裝置151冷卻轉動滾輪組110。In this embodiment, the
在一實施例中,冷卻裝置151例如是嵌入於滾輪組110內的液冷式冷卻裝置,但本發明不限於此。In one embodiment, the
本發明的一實施例的一種晶棒切割方法說明如下。An ingot cutting method according to an embodiment of the present invention is described as follows.
請參照圖1B至1F,其中圖1B至1F是依照本發明的一實施例的一種晶棒切割方法的側視示意圖。在圖1B至1F及對應的描述中,晶棒切割方法是以第一實施例的晶棒切割設備100為例。因此,在圖1B至1F中,相同或相似的標號表示相同或相似的構件且可以具有相同或相似的作動方式或用途,故針對圖1A中說明過的構件於此不再贅述。另外,本發明並不限制以第一實施例的晶棒切割設備100進行晶棒900切割。在其他為未繪示的實施例中,晶棒切割方法也可以藉由相同或相似於第一實施例的晶棒切割設備100(如:後述第二實施例的晶棒切割設備200或後述第三實施例的晶棒切割設備300)來進行。Please refer to FIGS. 1B to 1F , wherein FIGS. 1B to 1F are schematic side views of a method for cutting an ingot according to an embodiment of the present invention. In FIGS. 1B to 1F and the corresponding descriptions, the ingot cutting method is exemplified by the
請參照圖1A及圖1B,提供晶棒切割設備100。Referring to FIG. 1A and FIG. 1B , an
請繼續參照圖1A及圖1B,提供晶棒900。Please continue to refer to FIG. 1A and FIG. 1B , an
在本實施例中,晶棒900可以藉由黏著件161而被固定於座台162上,但本發明不限於此。In this embodiment, the
在本實施例中,於晶棒900與切割段121相接觸之前,可以先於容置空間138內注入流體141。但本發明不限於此。In this embodiment, the fluid 141 may be injected into the
在本實施例中,流體141可以持續性地藉由流體注入裝置140注入容置空間138內,並且,透過高度不一致的環形側壁131,可以使容置空間138內的流體141的液面142高於環形側壁131的最小高度處139。In the present embodiment, the fluid 141 can be continuously injected into the
在本實施例中,於晶棒900與切割段121相接觸之前,可以使部分的切割線120(亦即切割段121)被浸入流體141內,藉此,可使得切割線120於開始切割時更趨穩定。In this embodiment, before the
請繼續參照圖1B至圖1C,藉由座台162向切割線120的切割段121的方向163移動,可以使晶棒900與切割線120的切割段121相接觸。Please continue to refer to FIGS. 1B to 1C , by moving the
在一未繪示的實施例中,於晶棒900與切割段121接觸前,若切割線120未被浸入流體141,則可以藉由晶棒900施予切割線120的下壓力,使得部分的切割線120被浸入流體141內。In a not-shown embodiment, before the
請繼續參照圖1C至圖1F,可以藉由滾輪111的轉動,以使切割線120於切割方向128上移動。值得注意的是,本發明並未限制切割線120為單向式的移動或為往復式的移動。Please continue to refer to FIGS. 1C to 1F , the
藉由移動的切割線120,可以使與切割線120相接觸的晶棒900被切割。By the moving
如圖1C至圖1F所示,與晶棒900相接觸的切割段121會因受力而成弧狀。弧狀的切割段121所對應的角度可以被稱為線弓角(wire bow angle)。一般而言,弧狀的切割段121的曲率(或;對應的線弓角角度)會與切割段121的張力、切割線120的移動速度(可被稱為線速度),以及晶棒900向切割線120的移動速率(可被稱為下壓速率或進給速率)有關。另外,在對晶棒900進行切割時,上述有關參數也會影響所形成的晶圓的撓曲度(warp)。As shown in FIG. 1C to FIG. 1F , the
在本實施例中,在開始切割晶棒900時,與晶棒900相接觸的切割段121所具有的弓形度可以被稱為開切線弓。在本實施例中,相對來說係透過降低滾輪組111的轉動速度,亦即降低線速度,以使切割段121的開切線弓增加。In this embodiment, when starting to cut the
在本實施例中,於切割晶棒900時,部分的切割線120浸入流體141。舉例而言,切割線120與晶棒900的接觸處可被浸入流體141內。In this embodiment, when cutting the
如此一來,於藉由切割線120切割晶棒900時,所產生的碎屑或粒子可以藉由流體141而快速地被帶離接觸處。或是,於藉由切割線120切割晶棒900時,因磨擦而產生的熱量可以藉由流體141而快速地被帶離。如此一來,可以使切割晶棒900後所得到的多個晶圓910,在厚度上可以較為一致,且/或翹曲(warpage)可以較小。In this way, when the
詳細而言,晶棒900的被切割過程可以依序如圖1C至圖1F所示,吾人可以概分成,圖1C到圖1E為切割過程的前半段,圖1E到圖1F為切割過程的後半段。整個切割過程係透過控制線速度,及/或,下壓速率(或稱進給速率),使得切割過程中的晶棒900的材料移除率(Material removal rate,MRR)基本上相同。In detail, the cutting process of the
在本實施例中,在切割過程的前半段,進給速率及/或線速度可以是逐漸降低,而在切割過程的後半段,進給速率及/或線速度可以是逐漸增加。如此一來,可以使線弓在切割過程的前半段與後半段盡量一致。舉例而言,座台162及滾輪組110適於訊號連接於控制機構164,藉由控制機構164的參數調整,可以使座台162具有對應的進給速率,以及使滾輪組110帶動切割線120具有對應的線速度。In this embodiment, in the first half of the cutting process, the feed rate and/or the linear speed may be gradually decreased, and in the second half of the cutting process, the feed rate and/or the linear speed may be gradually increased. In this way, the wire bow can be as consistent as possible in the first half and the second half of the cutting process. For example, the
在本實施例中,晶棒切割設備100可以更包括冷卻裝置151。並且,於切割晶棒900時,冷卻裝置151可以將滾輪組110的熱量帶離。如此一來,可以降低滾輪組110所產生的熱量,以及傳遞至切割線120熱量,以使切割晶棒900後所得到的多個晶圓910,在厚度上可以較為一致,且/或翹曲可以較小。In this embodiment, the
經過上述步驟即可大致完成本實施例之晶棒900切割。切割後的晶棒900可形成一個或多個如圖1G所示的晶圓910。After the above steps, the cutting of the
一般而言,切割後的晶棒900所形成的晶圓910的切割面上,可以具有一條或多條的切割痕911。藉由切割痕911,可能可以推得切割時對應的切割段121的線弓。Generally speaking, the cutting surface of the
圖2是依照本發明的第二實施例的一種晶棒切割設備的側視示意圖。第二實施例的晶棒切割設備200與第一實施例的晶棒切割設備100類似。在圖2中,相同或相似的標號表示相同或相似的構件且可以具有相同或相似的作動方式或用途,故針對前述實施例中說明過的構件於此不再贅述。2 is a schematic side view of an ingot cutting apparatus according to a second embodiment of the present invention. The
請參照圖2,晶棒切割設備200適於切割晶棒900。晶棒切割設備200包括滾輪組110、槽體230以及流體注入裝置140。於切割方向128上,槽體230相對於底部137的開口236具有開口口徑236L,底部137具有底寬137L,且開口口徑236L大於底寬137L。此外,環形側壁131具有腰寬131L,且所述腰寬131L基本上相同於所述底寬137L。藉此,可更節省空間,且可使切割線120更不易切割到槽體230。另值得一提的是,在其他實施例中,環形側壁不一定要有腰寬,而可以是呈現平整面。Referring to FIG. 2 , the
圖3是依照本發明的第三實施例的一種晶棒切割設備的立體示意圖。第二實施例的晶棒切割設備300與第一實施例的晶棒切割設備100類似。在圖3中,相同或相似的標號表示相同或相似的構件且可以具有相同或相似的作動方式或用途,故針對圖1A中說明過的構件於此不再贅述。3 is a schematic perspective view of an ingot cutting apparatus according to a third embodiment of the present invention. The
請參照圖3,晶棒切割設備300適於切割晶棒900。晶棒切割設備200包括滾輪組110、槽體130、流體注入裝置140以及切割緩衝件371。切割緩衝件371至少配置在切割方向128上的環形側壁131上。例如,切割緩衝件371可配置於第一側壁132上。Referring to FIG. 3 , the
在本實施例中,切割緩衝件371可以降低切割線120直接觸碰到環形側壁131的可能。如此一來,可以降低切割線120的斷裂或損傷。In this embodiment, the cutting
在本實施例中,切割緩衝件371的硬度可以小於切割線120。舉例而言,切割緩衝件371的材質例如為橡膠。In this embodiment, the hardness of the cutting
綜上所述,本發明的晶棒切割設備及晶棒切割方法,可適於切割晶棒。To sum up, the crystal ingot cutting device and the crystal ingot cutting method of the present invention can be suitable for cutting the crystal ingot.
100、200、300:晶棒切割設備
110:滾輪組
111:滾輪
111a:第一方向
111b:第二方向
120:切割線
121:切割段
128:切割方向
130、230、330:槽體
131、331:環形側壁
131L:腰寬
132、332:第一側壁
133:第二側壁
333:凹槽
H2、H3:高度
236:開口
236L:開口口徑
137:底部
137L:底寬
138:容置空間
139:最小高度處
140:流體注入裝置
141:流體
142:液面
151:冷卻裝置
161:黏著件
162:座台
163:方向
164:控制機構
371:切割緩衝件
900:晶棒
910:晶圓
911:切割痕
100, 200, 300: Ingot cutting equipment
110: Roller set
111:
圖1A是本發明第一實施例一種晶棒切割設備的立體示意圖。 圖1B至1F是本發明一實施例的一種晶棒切割方法的側視示意圖。 圖1G是本發明一實施例的一種切割後的晶圓的側視示意圖。 圖2是本發明第二實施例一種晶棒切割設備的側視示意圖。 圖3是本發明第三實施例一種晶棒切割設備的立體示意圖。 FIG. 1A is a schematic perspective view of an ingot cutting device according to the first embodiment of the present invention. 1B to 1F are schematic side views of a method for cutting an ingot according to an embodiment of the present invention. FIG. 1G is a schematic side view of a diced wafer according to an embodiment of the present invention. FIG. 2 is a schematic side view of an ingot cutting device according to the second embodiment of the present invention. FIG. 3 is a schematic three-dimensional view of an ingot cutting device according to a third embodiment of the present invention.
100:晶棒切割設備 100: Ingot cutting equipment
110:滾輪組 110: Roller set
111:滾輪 111: Roller
111a:第一方向 111a: First Direction
111b:第二方向 111b: Second direction
120:切割線 120: cutting line
121:切割段 121: Cutting Segments
128:切割方向 128: Cutting direction
130:槽體 130: tank body
130a:溢流口 130a: overflow port
131:環形側壁 131: Annular side wall
132:第一側壁 132: First side wall
H2:高度 H2: height
133:第二側壁 133: Second side wall
H3:高度 H3: height
137:底部 137: Bottom
138:容置空間 138: accommodating space
139:最小高度處 139: Minimum height
151:冷卻裝置 151: Cooling device
161:黏著件 161: Adhesives
162:座台 162: Pedestal
163:方向 163: Direction
164:控制機構 164: Control Mechanism
900:晶棒 900: Crystal Rod
Claims (11)
Priority Applications (1)
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TW109134378A TW202214411A (en) | 2020-10-05 | 2020-10-05 | Ingot cutting apparatus and ingot cutting method |
Applications Claiming Priority (1)
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TW109134378A TW202214411A (en) | 2020-10-05 | 2020-10-05 | Ingot cutting apparatus and ingot cutting method |
Publications (1)
Publication Number | Publication Date |
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TW202214411A true TW202214411A (en) | 2022-04-16 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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TW109134378A TW202214411A (en) | 2020-10-05 | 2020-10-05 | Ingot cutting apparatus and ingot cutting method |
Country Status (1)
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TW (1) | TW202214411A (en) |
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2020
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