TW202213607A - Substrate processing apparatus and substrate processing method - Google Patents
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Abstract
Description
本發明係關於一種對基板進行規定處理之基板處理裝置及基板處理方法。The present invention relates to a substrate processing apparatus and a substrate processing method for performing predetermined processing on a substrate.
使用基板處理裝置,來對液晶顯示裝置或有機EL(Electro Luminescence,電致發光)顯示裝置等中所使用之FPD(Flat Panel Display,平板顯示器)用基板、半導體基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用基板、陶瓷基板或太陽電池用基板等各種基板進行各種處理。Substrate processing equipment is used to process substrates for FPD (Flat Panel Display), semiconductor substrates, optical disk substrates, and magnetic disks used in liquid crystal display devices or organic EL (Electro Luminescence) display devices. Various processes are performed on various substrates such as substrates, substrates for magneto-optical discs, substrates for masks, ceramic substrates, and substrates for solar cells.
例如,日本專利特開2013-77639號公報中記載有一種基板處理裝置,其包含複數個處理單元及使用第1及第2機械手於複數個處理單元間搬送基板之搬送機構。複數個處理單元包含分別對基板進行熱處理、冷卻處理及塗佈處理之熱處理單元、冷卻單元及塗佈處理單元等。搬送機構以利用第1機械手保持基板且不利用第2機械手保持基板之狀態於複數個處理單元間移動。又,搬送機構自搬送目的地之處理單元將處理後之基板利用第2機械手搬出,並且將利用第1機械手保持之處理前之基板搬入至該處理單元。For example, Japanese Patent Laid-Open No. 2013-77639 describes a substrate processing apparatus including a plurality of processing units and a transfer mechanism that uses first and second robots to transfer a substrate between the plurality of processing units. The plurality of treatment units include a heat treatment unit, a cooling unit, a coating treatment unit, and the like, which respectively perform heat treatment, cooling treatment, and coating treatment on the substrate. The conveyance mechanism moves among the plurality of processing units in a state where the substrate is held by the first robot and the substrate is not held by the second robot. Moreover, the transfer mechanism carries out the processed substrate from the processing unit of the transfer destination by the second robot, and carries the unprocessed substrate held by the first robot into the processing unit.
於日本專利特開2013-77639號公報中所記載之基板處理裝置中,利用搬送機構之第1及第2機械手連續地進行自處理單元搬出處理後之基板與向處理單元搬入處理前之基板。因此,認為產量提高。然而,為了自搬送目的地之處理單元搬出處理後之基板,搬送機構必須以任一機械手不保持基板之狀態於複數個處理單元間移動。於該情形時,一次搬送之基板片數只能少於機械手之數量,故而於提高產量方面存在限制。In the substrate processing apparatus described in Japanese Patent Laid-Open No. 2013-77639, the first and second robots of the conveying mechanism continuously carry out the unloading of the processed substrate from the processing unit and the loading of the unprocessed substrate into the processing unit. . Therefore, the yield is considered to be improved. However, in order to carry out the processed substrate from the processing unit of the transfer destination, the transfer mechanism must move among the plurality of processing units in a state in which any one of the robots does not hold the substrate. In this case, the number of substrates conveyed at one time can only be less than the number of robots, so there is a limit in increasing the output.
本發明之目的在於提供一種能夠提高產量之基板處理裝置及基板處理方法。An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of increasing the throughput.
(1)本發明之一態樣之基板處理裝置具備:處理單元,其具有供搬入處理前之基板之搬入位置與搬出處理後之基板之搬出位置,並對處理前之基板進行處理;及基板搬送部,其具有搬送保持部,該搬送保持部構成為能夠選擇性地保持處理前及處理後之基板;搬送保持部於保持處理前之基板進入至處理單元且將處理前之基板交遞至搬入位置之後,自搬出位置接收處理後之基板,於接收處理後之基板之後自處理單元退出。(1) A substrate processing apparatus according to an aspect of the present invention includes: a processing unit having a carry-in position for carrying in a substrate before processing and a carry-out position for carrying out a substrate after processing, and processing the substrate before processing; and a substrate The conveying part has a conveying and holding part configured to selectively hold the substrates before and after processing; After the carry-in position, the processed substrate is received from the carry-out position, and the processed substrate is withdrawn from the processing unit after receiving the processed substrate.
於該基板處理裝置中,基板搬送部之搬送保持部進入至處理單元。將由搬送保持部保持之處理前之基板交遞至處理單元之搬入位置。於將處理前之基板交遞至搬入位置之後,利用搬送保持部自處理單元之搬出位置接收處理後之基板。於自搬出位置接收處理後之基板之後,使搬送保持部自處理單元退出。利用處理單元對處理前之基板進行處理。In this substrate processing apparatus, the conveyance holding part of the substrate conveyance part enters the processing unit. The substrate before processing held by the transfer holding unit is handed over to the transfer position of the processing unit. After the substrate before processing is handed over to the carrying-in position, the processed substrate is received from the carrying-out position of the processing unit by the transfer holding part. After receiving the processed substrate from the unloading position, the transport holding portion is withdrawn from the processing unit. The substrate before processing is processed by the processing unit.
根據該構成,即便於處理單元存在處理後之基板之情形時,亦能夠將處理前之基板搬入至處理單元。因此,可於將處理前之基板交遞至處理單元之後,利用該搬送保持部接收處理後之基板。因此,無須為了接收處理後之基板而設置不保持基板之搬送保持部。藉此,能夠相應於搬送保持部之數量而提高產量。According to this configuration, even when there is a substrate after processing in the processing unit, the substrate before processing can be carried into the processing unit. Therefore, after the substrate before processing is handed over to the processing unit, the substrate after processing can be received by the transfer and holding portion. Therefore, it is not necessary to provide a conveyance holding portion that does not hold the substrate in order to receive the processed substrate. Thereby, the throughput can be improved according to the number of conveyance holding parts.
(2)搬入位置與搬出位置亦可按照於上下方向排列之方式配置。於該情形時,能夠減小處理單元之設置地面面積(佔據面積)。(2) The carry-in position and the carry-out position may also be arranged so as to be arranged in the up-down direction. In this case, the installation floor area (occupied area) of the processing unit can be reduced.
(3)亦可為處理單元設置有複數個,搬送保持部以與複數個處理單元分別對應之方式設置有複數個,複數個基板搬送部分別於進入對應之處理單元將處理前之基板交遞至搬入位置之後,自搬出位置接收處理後之基板,於接收處理後之基板之後自對應之處理單元退出。於該情形時,能夠對複數個處理單元連續地進行交遞處理前之基板並且接收處理後之基板之動作。藉此,可進一步提高產量。(3) A plurality of processing units may be provided, and a plurality of conveying and holding parts may be provided in a manner corresponding to the plurality of processing units, respectively, and the plurality of substrate conveying parts enter the corresponding processing units and deliver the substrates before processing. After reaching the carry-in position, the processed substrate is received from the carry-out position, and then withdrawn from the corresponding processing unit after receiving the processed substrate. In this case, the operations of handing over the substrate before processing and receiving the substrate after processing can be continuously performed to a plurality of processing units. Thereby, the yield can be further improved.
(4)處理單元亦可包含:第1基板保持部,其保持被搬入至搬入位置之基板;第1處理部,其對由第1基板保持部保持之基板進行處理;第2基板保持部,其保持自搬出位置搬入之基板;交接部,其將由第1處理部處理之基板自第1基板保持部交遞至第2基板保持部;以及第2處理部,其對由第2基板保持部保持之基板進行處理。於該情形時,能夠將搬入至搬入位置並由第1及第2處理部處理後之基板作為處理後之基板自搬出位置搬出。(4) The processing unit may further include: a first substrate holding part for holding the substrate carried in to the carrying position; a first processing part for processing the substrate held by the first substrate holding part; and a second substrate holding part, It holds the substrates brought in from the unloading position; a handover part, which hands over the substrates processed by the first processing part from the first substrate holding part to the second substrate holding part; and a second processing part, which is opposite to the second substrate holding part Hold the substrate for processing. In this case, the board|substrate which was carried in to the carry-in position and processed by the 1st and 2nd processing part can be carried out from the carry-out position as a processed board|substrate.
(5)第1處理部與第2處理部亦可對基板進行互不相同之處理。於該情形時,能夠對基板高效率地進行不同之處理。(5) The first processing unit and the second processing unit may perform different processing on the substrate. In this case, the substrates can be efficiently processed differently.
(6)亦可為第1處理部進行基板之下表面中央區域之清洗處理,第2處理部進行基板之包圍下表面中央區域之下表面外側區域之清洗處理。於該情形時,能夠高效率地進行基板之整個下表面之清洗處理。(6) The first processing unit may perform cleaning processing of the central area of the lower surface of the substrate, and the second processing unit may perform cleaning processing of the outer area of the lower surface surrounding the lower surface central area of the substrate. In this case, the cleaning process of the whole lower surface of a board|substrate can be performed efficiently.
(7)本發明之另一態樣之基板處理方法包含如下步驟:使基板搬送部之搬送保持部進入至處理單元;將由搬送保持部保持之處理前之基板交遞至處理單元之搬入位置;於將處理前之基板交遞至搬入位置之後,利用搬送保持部自處理單元之搬出位置接收處理後之基板;於自搬出位置接收處理後之基板之後,使搬送保持部自處理單元退出;以及利用處理單元對處理前之基板進行處理。(7) A substrate processing method according to another aspect of the present invention includes the steps of: entering the transfer holding part of the substrate transfer part into the processing unit; handing over the substrate before processing held by the transfer holding part to the loading position of the processing unit; After the substrate before processing is handed over to the carry-in position, the transfer holding part is used to receive the processed substrate from the carry-out position of the processing unit; after receiving the processed substrate from the carry-out position, the transfer holding part is withdrawn from the processing unit; and The substrate before processing is processed by the processing unit.
根據該基板處理方法,即便於處理單元存在處理後之基板之情形時,亦能夠將處理前之基板搬入至處理單元。因此,可於將處理前之基板交遞至處理單元之後,利用該搬送保持部接收處理後之基板。因此,無須為了接收處理後之基板而設置不保持基板之搬送保持部。藉此,能夠相應於搬送保持部之數量而提高產量。According to this substrate processing method, even when there is a processed substrate in the processing unit, the substrate before processing can be carried into the processing unit. Therefore, after the substrate before processing is handed over to the processing unit, the substrate after processing can be received by the transfer and holding portion. Therefore, it is not necessary to provide a conveyance holding portion that does not hold the substrate in order to receive the processed substrate. Thereby, the throughput can be improved according to the number of conveyance holding parts.
以下,使用圖式對本發明之實施方式之基板處理裝置及基板處理方法進行說明。於以下之說明中,所謂基板,係指半導體基板(晶圓)、液晶顯示裝置或有機EL(Electro Luminescence)顯示裝置等FPD(Flat Panel Display)用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用基板、陶瓷基板或太陽電池用基板等。又,於本實施方式中,基板之上表面為電路形成面(正面),基板之下表面為與電路形成面相反側之面(背面)。又,於本實施方式中,基板除了凹口以外具有圓形狀。Hereinafter, a substrate processing apparatus and a substrate processing method according to an embodiment of the present invention will be described with reference to the drawings. In the following description, the term "substrate" refers to a semiconductor substrate (wafer), a substrate for FPD (Flat Panel Display) such as a liquid crystal display device or an organic EL (Electro Luminescence) display device, a substrate for an optical disc, a substrate for a magnetic disc, a magnetic Optical disc substrates, photomask substrates, ceramic substrates or solar cell substrates, etc. Moreover, in this embodiment, the upper surface of a board|substrate is a circuit formation surface (front surface), and the lower surface of a board|substrate is a surface (back surface) opposite to a circuit formation surface. Moreover, in this embodiment, the board|substrate has a circular shape except a notch.
(1)基板處理裝置之構成(1) Configuration of substrate processing apparatus
圖1係本發明之一實施方式之基板處理裝置之模式性俯視圖。圖2係圖1之J-J線上之基板處理裝置100之模式性剖視圖。如圖1所示,本實施方式之基板處理裝置100具有裝載區塊110及處理區塊120。裝載區塊110及處理區塊120以相互相鄰之方式設置。FIG. 1 is a schematic plan view of a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of the
裝載區塊110包含複數個(於本例中為4個)載具載置台140及搬送部150。複數個載具載置台140連接於搬送部150,且以隔開間隔地排列成一列之方式配置。於各載具載置台140上,載置收納複數片基板W之載具C。The
於搬送部150設置有分度機械手200及控制裝置170。分度機械手200包含複數個(於本例中為4個)機械手Ia、Ib、Ic、Id、機械手支持構件210及搬送驅動部220。An
複數個機械手Ia~Id構成為能夠分別保持複數個基板W,且以於上下方向以固定間隔排列之狀態設置於機械手支持構件210上。機械手支持構件210以沿一方向延伸之方式形成,且支持複數個機械手Ia~Id以使複數個機械手Ia~Id能夠於上述一方向上進退。搬送驅動部220構成為能夠於水平方向(複數個載具載置台140排列之方向)移動,以能夠圍繞鉛直軸旋轉且升降之方式支持機械手支持構件210。進而,搬送驅動部220包含複數個馬達及氣缸等,為了利用複數個機械手Ia~Id搬送複數個基板W,而使機械手支持構件210於水平方向移動,使機械手支持構件210圍繞鉛直軸旋轉並升降。又,搬送驅動部220使複數個機械手Ia~Id於水平方向進退。控制裝置170包括包含CPU(Central Processing Unit,中央運算處理裝置)、RAM(Random Access Memory,隨機存取記憶體)及ROM(Read Only Memory,唯讀記憶體)及記憶裝置之電腦等,控制基板處理裝置100內之各構成部。The plurality of robots Ia to Id are configured to be able to hold the plurality of substrates W, respectively, and are provided on the
處理區塊120包含清洗部161、162及搬送部163。清洗部161、搬送部163及清洗部162與搬送部150相鄰,並且依次排列配置。於清洗部161、162中,複數個(例如4個)基板清洗裝置1上下積層配置。各基板清洗裝置1具有供搬入處理前之基板W之搬入位置、及搬出處理後之基板W之搬出位置。關於基板清洗裝置1之構成及動作之詳細情況將於下文敍述。The
於搬送部163設置有主機器人300。主機器人300包含複數個(於本例中為4個)機械手Ma、Mb、Mc、Md、機械手支持構件310及搬送驅動部320。複數個機械手Ma~Md構成為能夠分別保持複數個基板W,且以於上下方向排列之狀態設置於機械手支持構件310上。The
機械手支持構件310以沿一方向延伸之方式形成,且支持複數個機械手Ma~Md以使複數個機械手Ma~Md能夠於該一方向上分別獨立地進退。搬送驅動部320支持機械手支持構件310使之能夠圍繞鉛直軸旋轉且升降。進而,搬送驅動部320包含複數個馬達及氣缸等,機械手支持構件310圍繞鉛直軸旋轉並升降,以利用複數個機械手Ma~Md搬送複數個基板W。又,搬送驅動部320使複數個機械手Ma~Md於水平方向進退。The
於裝載區塊110與處理區塊120之間,上下積層配置有用以於分度機械手200與主機器人300之間進行基板W交接之複數個(於本例中為4個)基板載置部PASS1及複數個基板載置部PASS2。複數個基板載置部PASS1位於較複數個(於本例中為4個)基板載置部PASS2靠上方。Between the
複數個基板載置部PASS2用於自分度機械手200對主機器人300交遞基板W。複數個基板載置部PASS1用於自主機器人300對分度機械手200交遞基板W。複數個基板載置部PASS1間之間隔亦可與主機器人300之複數個機械手Ma~Md之間之間隔大致相等。同樣地,複數個基板載置部PASS2間之間隔亦可與主機器人300之複數個機械手Ma~Md之間之間隔大致相等。The plurality of substrate placement portions PASS2 are used to deliver the substrates W to the
分度機械手200自載置於複數個載具載置台140上之複數個載具C之任一個載具C取出處理前之基板W。又,分度機械手200將所取出之處理前之基板W載置於複數個基板載置部PASS2之任一個基板載置部PASS2。進而,分度機械手200接收載置於複數個基板載置部PASS1之任一個基板載置部PASS1之處理後之基板W,並將其收容於空之載具C內。The
主機器人300利用複數個機械手Ma~Md分別接收載置於複數個基板載置部PASS2之複數個處理前之基板W。此時,主機器人300亦可利用複數個機械手Ma~Md依次接收複數個基板W。於複數個基板載置部PASS2間之間隔與複數個機械手Ma~Md之間之間隔大致相等之情形時,主機器人300亦可利用複數個機械手Ma~Md同時接收複數個基板W。The
接下來,主機器人300將自基板載置部PASS2利用複數個機械手Ma~Md接收之複數個處理前之基板W分別交遞至清洗部161或清洗部162之複數個基板清洗裝置1之搬入位置。然後,主機器人300利用複數個機械手Ma~Md分別接收載置於複數個基板清洗裝置1之搬出位置之複數個處理後之基板W。Next, the
然後,主機器人300將自基板清洗裝置1利用複數個機械手Ma~Md接收之複數個處理後之基板W分別載置於複數個基板載置部PASS1。此時,主機器人300亦可將複數個處理後之基板W依次載置於複數個基板載置部PASS1。於複數個基板載置部PASS1間之間隔與複數個機械手Ma~Md之間之間隔大致相等之情形時,主機器人300亦可利用複數個機械手Ma~Md將複數個基板W同時載置於複數個基板載置部PASS1。Then, the
(2)基板清洗裝置之構成(2) The structure of the substrate cleaning device
圖3係圖1之基板清洗裝置1之模式性俯視圖。圖4係表示圖3之基板清洗裝置1之內部構成之外觀立體圖。於基板清洗裝置1中,為了明確位置關係而定義相互正交之X方向、Y方向及Z方向。於圖3及圖4以後之規定圖中,X方向、Y方向及Z方向適當利用箭頭表示。X方向及Y方向於水平面內相互正交,Z方向相當於鉛直方向。FIG. 3 is a schematic plan view of the
如圖3所示,基板清洗裝置1具備上側保持裝置10A、10B、下側保持裝置20、基座裝置30、交接裝置40、下表面清洗裝置50、杯裝置60、上表面清洗裝置70、端部清洗裝置80及開閉裝置90。該等構成要素設置於單元殼體2內。於圖3中,利用虛線表示單元殼體2。As shown in FIG. 3 , the
單元殼體2具有矩形之底面部2a、及自底面部2a之4條邊向上方延伸之4個側壁部2b、2c、2d、2e。側壁部2b、2c相互對向,側壁部2d、2e相互對向。於側壁部2b之中央部,形成有矩形之開口。該開口為基板W之搬入搬出口2x,於相對於單元殼體2搬入及搬出基板W時使用。於圖4中,利用粗虛線表示搬入搬出口2x。於以下之說明中,將Y方向中自單元殼體2之內部經過搬入搬出口2x朝向單元殼體2之外側之方向(自側壁部2c朝向側壁部2b之方向)稱為前方,將其相反方向(自側壁部2b朝向側壁部2c之方向)稱為後方。The
於側壁部2b中之搬入搬出口2x之形成部分及其附近之區域,設置有開閉裝置90。開閉裝置90包含構成為能夠將搬入搬出口2x打開及封閉之擋板91、及驅動擋板91之擋板驅動部92。於圖4中,利用粗的二點鏈線表示擋板91。擋板驅動部92以於相對於基板清洗裝置1搬入及搬出基板W時打開搬入搬出口2x之方式驅動擋板91。又,擋板驅動部92以於基板清洗裝置1中對基板W進行清洗處理時關閉搬入搬出口2x之方式驅動擋板91。The opening and
於底面部2a之中央部,設置有基座裝置30。基座裝置30包含線性導軌31、可動基座32及基座驅動部33。線性導軌31包含2條軌道,且以俯視下自側壁部2b之附近沿Y方向延伸至側壁部2c之附近之方式設置。可動基座32以能夠於線性導軌31之2條軌道上沿Y方向移動之方式設置。基座驅動部33例如包含脈衝馬達,且於線性導軌31上使可動基座32沿Y方向移動。The
於可動基座32上,下側保持裝置20及下表面清洗裝置50以排列於Y方向之方式設置。下側保持裝置20包含吸附保持部21及吸附保持驅動部22。吸附保持部21係所謂的旋轉夾頭,具有能夠吸附保持基板W之下表面之圓形吸附面,且構成為能夠圍繞沿上下方向延伸之軸(Z方向之軸)旋轉。於圖3中,利用二點鏈線表示由下側保持裝置20吸附保持之基板W之外形。於以下之說明中,於由吸附保持部21吸附保持基板W時,將基板W之下表面中應由吸附保持部21之吸附面吸附之區域,稱為下表面中央區域。另一方面,將基板W之下表面中包圍下表面中央區域之區域,稱為下表面外側區域。On the
吸附保持驅動部22包含馬達。吸附保持驅動部22之馬達,以旋轉軸朝向上方突出之方式設置於可動基座32上。吸附保持部21安裝於吸附保持驅動部22之旋轉軸之上端部。又,於吸附保持驅動部22之旋轉軸中,形成有用以於吸附保持部21中吸附保持基板W之吸引路徑。該吸引路徑連接於未圖示之吸氣裝置。吸附保持驅動部22使吸附保持部21圍繞上述旋轉軸旋轉。The suction-holding
於可動基座32上,於下側保持裝置20之附近進而設置有交接裝置40。交接裝置40包含複數個(於本例中為3個)支持銷41、銷連結構件42及銷升降驅動部43。銷連結構件42以俯視下包圍吸附保持部21之方式形成,且將複數個支持銷41連結。複數個支持銷41以利用銷連結構件42相互連結之狀態,自銷連結構件42向上方延伸固定長度。銷升降驅動部43於可動基座32上使銷連結構件42升降。藉此,複數個支持銷41相對於吸附保持部21相對性地升降。On the
下表面清洗裝置50包含下表面刷51、2個液體噴嘴52、氣體噴出部53、升降支持部54、移動支持部55、下表面刷旋轉驅動部55a、下表面刷升降驅動部55b及下表面刷移動驅動部55c。移動支持部55設為於可動基座32上之固定區域內能夠相對於下側保持裝置20於Y方向移動。如圖4所示,升降支持部54可升降地設置於移動支持部55上。升降支持部54具有於遠離吸附保持部21之方向(於本例中為後方)向斜下方傾斜之上表面54u。The lower
如圖3所示,下表面刷51例如由PVA(聚乙烯醇)海綿或分散有研磨粒之PVA海綿形成,具有能夠接觸於基板W之下表面之圓形清洗面。又,下表面刷51以清洗面朝向上方之方式且以清洗面能夠圍繞經過該清洗面之中心且沿上下方向延伸之軸旋轉之方式,安裝於升降支持部54之上表面54u。下表面刷51之清洗面之面積大於吸附保持部21之吸附面之面積。As shown in FIG. 3 , the
2個液體噴嘴52分別以位於下表面刷51之附近且液體噴出口朝向上方之方式,安裝於升降支持部54之上表面54u上。於液體噴嘴52連接有下表面清洗液供給部56(圖5)。下表面清洗液供給部56對液體噴嘴52供給清洗液。液體噴嘴52於利用下表面刷51清洗基板W時,將自下表面清洗液供給部56供給之清洗液供給至基板W之下表面。於本實施方式中,使用純水(脫離子水)作為供給至液體噴嘴52之清洗液。再者,關於供給至液體噴嘴52之清洗液,亦可代替純水而使用碳酸水、臭氧水、氫水、電解離子水、SC1(氨與過氧化氫水之混合溶液)或TMAH(氫氧化四甲基銨)等。The two
氣體噴出部53係具有沿一方向延伸之氣體噴出口之狹縫狀氣體噴射噴嘴。氣體噴出部53以俯視下位於下表面刷51與吸附保持部21之間且氣體噴射口朝向上方之方式,安裝於升降支持部54之上表面54u。於氣體噴出部53連接有噴出氣體供給部57(圖5)。噴出氣體供給部57對氣體噴出部53供給氣體。於本實施方式中,使用氮氣作為供給至氣體噴出部53之氣體。氣體噴出部53於利用下表面刷51清洗基板W時及下述對基板W之下表面進行乾燥時,將自噴出氣體供給部57供給之氣體噴射至基板W之下表面。於該情形時,於下表面刷51與吸附保持部21之間,形成沿X方向延伸之帶狀氣簾。關於供給至氣體噴出部53之氣體,亦可代替氮氣而使用氬氣或氦氣等惰性氣體。The
下表面刷旋轉驅動部55a包含馬達,於利用下表面刷51清洗基板W時使下表面刷51旋轉。下表面刷升降驅動部55b包含步進馬達或氣缸,使升降支持部54相對於移動支持部55升降。下表面刷移動驅動部55c包含馬達,於可動基座32上使移動支持部55於Y方向移動。此處,下側保持裝置20於可動基座32上之位置被固定。因此,於利用下表面刷移動驅動部55c使移動支持部55於Y方向移動時,移動支持部55相對於下側保持裝置20相對性地移動。於以下之說明中,將於可動基座32上最接近下側保持裝置20時之下表面清洗裝置50之位置稱為接近位置,將於可動基座32上最遠離下側保持裝置20時之下表面清洗裝置50之位置稱為離開位置。The lower surface brush
於底面部2a之中央部,進而設置有杯裝置60。杯裝置60包含處理杯61及杯驅動部62。處理杯61以俯視下包圍下側保持裝置20及基座裝置30之方式可升降地設置。於圖4中,利用虛線表示處理杯61。杯驅動部62根據下表面刷51清洗基板W之下表面中之哪個部分來使處理杯61於下杯位置與上杯位置之間移動。下杯位置係處理杯61之上端部位於較由吸附保持部21吸附保持之基板W更靠下方之高度位置。又,上杯位置係處理杯61之上端部位於較吸附保持部21更靠上方之高度位置。The
於較處理杯61更靠上方之高度位置,以俯視下隔著基座裝置30而對向之方式設置有一對上側保持裝置10A、10B。上側保持裝置10A包含下夾頭11A、上夾頭12A、下夾頭驅動部13A及上夾頭驅動部14A。上側保持裝置10B包含下夾頭11B、上夾頭12B、下夾頭驅動部13B及上夾頭驅動部14B。A pair of
下夾頭11A、11B設為相對於俯視下經過吸附保持部21之中心且沿Y方向(前後方向)延伸之鉛直面對稱地配置,且於共通之水平面內可沿X方向移動。下夾頭11A、11B分別具有能夠自基板W之下方支持基板W之下表面周緣部之2根支持片。下夾頭驅動部13A、13B以下夾頭11A、11B相互接近之方式,或以下夾頭11A、11B相互遠離之方式,使下夾頭11A、11B移動。The lower chucks 11A and 11B are arranged symmetrically with respect to a vertical plane extending in the Y direction (front-rear direction) through the center of the
上夾頭12A、12B與下夾頭11A、11B同樣地,設為相對於俯視下經過吸附保持部21之中心且沿Y方向(前後方向)延伸之鉛直面對稱地配置,且於共通之水平面內可沿X方向移動。上夾頭12A、12B分別具有以抵接於基板W之外周端部之2個部分且能夠保持基板W之外周端部之方式構成之2根保持片。上夾頭驅動部14A、14B以上夾頭12A、12B相互接近之方式,或以上夾頭12A、12B相互遠離之方式,使上夾頭12A、12B移動。The upper chucks 12A, 12B, like the
如圖3所示,於處理杯61之一側,以俯視下位於上側保持裝置10B之附近之方式,設置有上表面清洗裝置70。上表面清洗裝置70包含旋轉支持軸71、臂72、噴霧嘴73及上表面清洗驅動部74。As shown in FIG. 3 , an upper
旋轉支持軸71於底面部2a上,以沿上下方向延伸之方式且以能夠升降且能夠旋轉之方式由上表面清洗驅動部74支持。如圖4所示,臂72於較上側保持裝置10B更靠上方之位置,以自旋轉支持軸71之上端部向水平方向延伸之方式設置。於臂72之前端部安裝著噴霧嘴73。The
於噴霧嘴73連接有上表面清洗流體供給部75(圖5)。上表面清洗流體供給部75對噴霧嘴73供給清洗液及氣體。於本實施方式中,使用純水作為供給至噴霧嘴73之清洗液,使用氮氣作為供給至噴霧嘴73之氣體。噴霧嘴73於對基板W之上表面進行清洗時,將自上表面清洗流體供給部75供給之清洗液與氣體混合產生混合流體,並將所產生之混合流體向下方噴射。An upper surface cleaning fluid supply part 75 ( FIG. 5 ) is connected to the
再者,關於供給至噴霧嘴73之清洗液,亦可代替純水而使用碳酸水、臭氧水、氫水、電解離子水、SC1(氨與過氧化氫水之混合溶液)或TMAH(氫氧化四甲基銨)等。又,關於供給至噴霧嘴73之氣體,亦可代替氮氣而使用氬氣或氦氣等惰性氣體。In addition, as for the cleaning liquid supplied to the
上表面清洗驅動部74包含1個或複數個脈衝馬達及氣缸等,使旋轉支持軸71升降,並且使旋轉支持軸71旋轉。根據上述構成,藉由於利用吸附保持部21吸附保持並旋轉之基板W之上表面上,使噴霧嘴73呈圓弧狀移動,能夠清洗基板W之整個上表面。The upper surface cleaning
如圖3所示,於處理杯61之另一側,以俯視下位於上側保持裝置10A之附近之方式,設置有端部清洗裝置80。端部清洗裝置80包含旋轉支持軸81、臂82、斜面刷83及斜面刷驅動部84。As shown in FIG. 3, on the other side of the
旋轉支持軸81於底面部2a上,以沿上下方向延伸之方式且以能夠升降且能夠旋轉之方式由斜面刷驅動部84支持。如圖4所示,臂82於較上側保持裝置10A更靠上方之位置,以自旋轉支持軸81之上端部向水平方向延伸之方式設置。於臂82之前端部,以朝向下方突出之方式且以能夠圍繞上下方向之軸旋轉之方式設置有斜面刷83。The
斜面刷83例如由PVA海綿或分散有研磨粒之PVA海綿形成,上半部具有倒圓錐台形狀並且下半部具有圓錐台形狀。根據該斜面刷83,能夠於外周面之上下方向上之中央部分清洗基板W之外周端部。The
斜面刷驅動部84包含1個或複數個脈衝馬達及氣缸等,使旋轉支持軸81升降,並且使旋轉支持軸81旋轉。根據上述構成,藉由使斜面刷83之外周面之中央部分接觸於由吸附保持部21吸附保持且旋轉之基板W之外周端部,能夠清洗基板W之整個外周端部。The inclined surface
此處,斜面刷驅動部84進而包含內置於臂82中之馬達。該馬達使設置於臂82之前端部之斜面刷83圍繞上下方向之軸旋轉。因此,於對基板W之外周端部進行清洗時,藉由使斜面刷83旋轉,而基板W之外周端部中之斜面刷83之清洗力提高。Here, the slant
(3)基板處理裝置之控制系統(3) Control system of substrate processing equipment
圖5係表示基板處理裝置100之控制系統之構成之方塊圖。如上所述,圖1之控制裝置170包含CPU、RAM、ROM及記憶裝置。RAM用作CPU之作業區域。ROM記憶系統程式。記憶裝置記憶基板處理程式。FIG. 5 is a block diagram showing the configuration of the control system of the
如圖5所示,控制裝置170包含夾頭控制部171、吸附控制部172、基座控制部173、交接控制部174、下表面清洗控制部175、杯控制部176、上表面清洗控制部177、斜面清洗控制部178、搬入搬出控制部179及搬送控制部180、181作為功能部。藉由CPU於RAM上執行存儲於記憶裝置中之基板處理程式來實現控制裝置170之功能部。控制裝置170之功能部之一部分或全部亦可由電子電路等硬體來實現。As shown in FIG. 5 , the
夾頭控制部171、吸附控制部172、基座控制部173、交接控制部174、下表面清洗控制部175、杯控制部176、上表面清洗控制部177、斜面清洗控制部178及搬入搬出控制部179對各基板清洗裝置1之動作進行控制。具體而言,夾頭控制部171控制下夾頭驅動部13A、13B及上夾頭驅動部14A、14B,以接收搬入至各基板清洗裝置1之基板W,並將其保持於吸附保持部21之上方之位置。
吸附控制部172控制吸附保持驅動部22,以利用吸附保持部21吸附保持基板W並且使被吸附保持之基板W旋轉。基座控制部173控制基座驅動部33,以使可動基座32相對於由上側保持裝置10A、10B保持之基板W移動。交接控制部174控制銷升降驅動部43,以使基板W於由上側保持裝置10A、10B保持之基板W之高度位置、與由吸附保持部21保持之基板W之高度位置之間移動。The
下表面清洗控制部175控制下表面刷旋轉驅動部55a、下表面刷升降驅動部55b、下表面刷移動驅動部55c、下表面清洗液供給部56及噴出氣體供給部57,以清洗基板W之下表面。杯控制部176控制杯驅動部62,以便於由吸附保持部21吸附保持之基板W之清洗時利用處理杯61接住自基板W飛散之清洗液。The lower surface
上表面清洗控制部177控制上表面清洗驅動部74及上表面清洗流體供給部75,以清洗由吸附保持部21吸附保持之基板W之上表面。斜面清洗控制部178控制斜面刷驅動部84,以清洗由吸附保持部21吸附保持之基板W之外周端部。搬入搬出控制部179控制擋板驅動部92,以於各基板清洗裝置1中搬入及搬出基板W時將單元殼體2之搬入搬出口2x打開及關閉。The upper surface cleaning
搬送控制部180控制搬送驅動部220,以於複數個載具C與複數個基板載置部PASS1、PASS2之間搬送基板W。搬送控制部181控制搬送驅動部320,以於複數個基板載置部PASS1、PASS2與複數個基板清洗裝置1之間搬送基板W。The
再者,於圖5之例子中,控制裝置170除了控制分度機械手200及主機器人300之動作以外,還控制複數個基板清洗裝置1之動作,但實施方式並不限定於此。各基板清洗裝置1亦可具有用以控制該基板清洗裝置1之動作之控制裝置。於該情形時,控制裝置170亦可不包含夾頭控制部171、吸附控制部172、基座控制部173、交接控制部174、下表面清洗控制部175、杯控制部176、上表面清洗控制部177、斜面清洗控制部178及搬入搬出控制部179。Furthermore, in the example of FIG. 5 , the
(4)基板清洗裝置之動作(4) Operation of the substrate cleaning device
於複數個基板清洗裝置1中,對利用圖1之主機器人300之機械手Ma~Md分別搬送之複數個基板W依次進行清洗處理。以下,對關於利用機械手Ma搬送之基板W之基板清洗裝置1之動作進行說明,但關於利用機械手Mb~Md搬送之基板W之基板清洗裝置1之動作亦與關於利用機械手Ma搬送之基板W之基板清洗裝置1之動作相同。In the plurality of
圖6~圖17係用以說明圖3之基板清洗裝置1之動作之一例之模式圖。於圖6~圖17之各圖中,上段表示了基板清洗裝置1之俯視圖。又,中段表示了沿Y方向觀察之下側保持裝置20及其周邊部之側視圖,下段表示了沿X方向觀察之下側保持裝置20及其周邊部之側視圖。中段之側視圖與圖3之A-A線側視圖對應,下段之側視圖與圖3之B-B線側視圖對應。再者,為了容易理解基板清洗裝置1中之各構成要素之形狀及動作狀態,而於上段之俯視圖與中段及下段之側視圖之間,一部分構成要素之擴縮率不同。又,於圖6~圖17中,利用二點鏈線表示處理杯61,並且利用粗的單點鏈線表示基板W之外形。6 to 17 are schematic views for explaining an example of the operation of the
於對基板清洗裝置1搬入基板W之前之初始狀態中,開閉裝置90之擋板91將搬入搬出口2x封閉。又,如圖3所示,下夾頭11A、11B維持為下夾頭11A、11B間之距離充分大於基板W之直徑之狀態。又,上夾頭12A、12B亦維持為上夾頭12A、12B間之距離充分大於基板W之直徑。又,基座裝置30之可動基座32以俯視下吸附保持部21之中心位於處理杯61之中心之方式配置。又,於可動基座32上,下表面清洗裝置50配置於接近位置。又,下表面清洗裝置50之升降支持部54處於下表面刷51之清洗面(上端部)位於較吸附保持部21更靠下方之狀態。又,交接裝置40處於複數個支持銷41位於較吸附保持部21高靠下方之狀態。進而,於杯裝置60中,處理杯61處於下杯位置。於以下之說明中,將俯視下之處理杯61之中心位置稱為平面基準位置rp。又,將俯視下吸附保持部21之中心處於平面基準位置rp時之底面部2a上之可動基座32之位置,稱為第1水平位置。In the initial state before the substrate W is loaded into the
將處理前之基板W搬入基板清洗裝置1之單元殼體2內。具體而言,於即將搬入基板W之前,擋板91打開搬入搬出口2x。然後,如圖6中粗的實線箭頭a1所示,圖1之主機器人300之機械手Ma通過搬入搬出口2x進入至單元殼體2,將基板W交遞至單元殼體2內之大致中央之位置。此時,如圖6所示,利用機械手Ma保持之基板W,位於下夾頭11A及上夾頭12A與下夾頭11B及上夾頭12B之間。The substrate W before processing is carried into the
接下來,如圖7中粗的實線箭頭a2所示,下夾頭11A、11B係以下夾頭11A、11B之複數個支持片位於基板W之下表面周緣部之下方之方式相互接近。於該狀態下,機械手Ma下降。藉此,保持於機械手Ma之基板W之下表面周緣部之複數個部分,由下夾頭11A、11B之複數個支持片支持。此時之基板W之位置為搬入位置。於該時間點,於搬出位置,存在前次搬入至單元殼體2且處理結束之基板W。因此,機械手Ma如上所述於搬入位置將基板W交遞至下夾頭11A、11B之後,接收搬出位置之處理後之基板W,自單元殼體2退出。於機械手Ma退出之後,擋板91將搬入搬出口2x封閉。Next, as shown by the thick solid arrow a2 in FIG. In this state, the manipulator Ma descends. Thereby, a plurality of portions of the peripheral edge portion of the lower surface of the substrate W held by the robot Ma are supported by the plurality of support pieces of the
接下來,如圖8中粗的實線箭頭a3所示,上夾頭12A、12B係以上夾頭12A、12B之複數個保持片抵接於基板W之外周端部之方式相互接近。藉由將上夾頭12A、12B之複數個保持片抵接於基板W之外周端部之複數個部分,而利用上夾頭12A、12B進一步保持由下夾頭11A、11B支持之基板W。如此一來,由上側保持裝置10A、10B保持之基板W之中心,於俯視下與平面基準位置rp重疊或大致重疊。又,如圖8中粗的實線箭頭a4所示,以吸附保持部21自平面基準位置rp偏移規定距離並且下表面刷51之中心位於平面基準位置rp之方式,使可動基座32自第1水平位置向前方移動。此時,將位於底面部2a上之可動基座32之位置,稱為第2水平位置。Next, as shown by the thick solid arrow a3 in FIG. The substrate W supported by the
接下來,如圖9中粗的實線箭頭a5所示,使升降支持部54以下表面刷51之清洗面接觸於基板W之下表面中央區域之方式上升。又,如圖9中粗的實線箭頭a6所示,下表面刷51圍繞上下方向之軸旋轉(自轉)。藉此,附著於基板W之下表面中央區域之污染物質被下表面刷51物理地剝離。Next, as shown by the thick solid line arrow a5 in FIG. Moreover, as shown by the thick solid line arrow a6 in FIG. 9, the
於圖9之下段,於批註框內表示下表面刷51接觸於基板W之下表面之部分之放大側視圖。如該批註框內所示,於下表面刷51接觸於基板W之狀態下,液體噴嘴52及氣體噴出部53保持於接近基板W之下表面之位置。此時,如中空箭頭a51所示,液體噴嘴52於下表面刷51之附近之位置朝向基板W之下表面噴出清洗液。藉此,自液體噴嘴52供給至基板W之下表面之清洗液被導向下表面刷51與基板W之接觸部,藉此利用下表面刷51自基板W之背面去除之污染物質被清洗液沖洗。如此,於下表面清洗裝置50中,液體噴嘴52與下表面刷51一起安裝於升降支持部54。藉此,能夠高效率地對由下表面刷51清洗之基板W之下表面部分供給清洗液。因此,減少清洗液之消耗量並且抑制清洗液過度飛散。In the lower part of FIG. 9 , an enlarged side view of the portion of the
再者,清洗基板W之下表面時之下表面刷51之旋轉速度被維持為自液體噴嘴52供給至基板W之下表面之清洗液不會向下表面刷51之側方飛散之程度之速度。Furthermore, when cleaning the lower surface of the substrate W, the rotation speed of the
此處,升降支持部54之上表面54u於遠離吸附保持部21之方向朝向斜下方傾斜。於該情形時,於包含污染物質之清洗液自基板W之下表面掉落至升降支持部54上之情形時,由上表面54u接住之清洗液被導向遠離吸附保持部21之方向。Here, the
又,於利用下表面刷51清洗基板W之下表面時,氣體噴出部53如圖9之批註框內之中空箭頭a52所示,於下表面刷51與吸附保持部21之間之位置朝向基板W之下表面噴射氣體。於本實施方式中,氣體噴出部53以氣體噴射口沿X方向延伸之方式安裝於升降支持部54上。於該情形時,於自氣體噴出部53對基板W之下表面噴射氣體時,於下表面刷51與吸附保持部21之間形成沿X方向延伸之帶狀氣簾。藉此,於利用下表面刷51清洗基板W之下表面時,防止包含污染物質之清洗液朝向吸附保持部21飛散。因此,於利用下表面刷51清洗基板W之下表面時,防止包含污染物質之清洗液附著於吸附保持部21,保持吸附保持部21之吸附面清潔。In addition, when the lower surface of the substrate W is cleaned with the
再者,於圖9之例子中,氣體噴出部53如中空箭頭a52所示,自氣體噴出部53朝向下表面刷51向斜上方噴射氣體,但實施方式並不限定於此。氣體噴出部53亦可按照自氣體噴出部53朝向基板W之下表面沿Z方向之方式噴射氣體。In addition, in the example of FIG. 9, the
接下來,於圖9之狀態下,當基板W之下表面中央區域之清洗完成後,停止下表面刷51之旋轉,以下表面刷51之清洗面自基板W離開規定距離之方式使升降支持部54下降。又,停止自液體噴嘴52向基板W噴出清洗液。此時,繼續自氣體噴出部53向基板W噴射氣體。Next, in the state of FIG. 9 , after the cleaning of the central area of the lower surface of the substrate W is completed, the rotation of the
然後,如圖10中粗的實線箭頭a7所示,以吸附保持部21位於平面基準位置rp之方式,使可動基座32向後方移動。即,可動基座32自第2水平位置向第1水平位置移動。此時,藉由繼續自氣體噴出部53向基板W噴射氣體,而基板W之下表面中央區域被氣簾依次乾燥。Then, as indicated by the thick solid arrow a7 in FIG. 10 , the
接下來,如圖11中粗的實線箭頭a8所示,以下表面刷51之清洗面位於較吸附保持部21之吸附面(上端部)更靠下方之方式,使升降支持部54下降。又,如圖11中粗的實線箭頭a9所示,以上夾頭12A、12B之複數個保持片自基板W之外周端部離開之方式,使上夾頭12A、12B相互遠離。此時,成為基板W由下夾頭11A、11B支持之狀態。Next, as shown by the thick solid arrow a8 in FIG. 11 , the
然後,如圖11中粗的實線箭頭a10所示,以複數個支持銷41之上端部位於較下夾頭11A、11B稍微靠上方之方式,使銷連結構件42上升。藉此,由下夾頭11A、11B支持之基板W被複數個支持銷41接收。Then, as shown by the thick solid arrow a10 in FIG. 11 , the
接下來,如圖12中粗的實線箭頭a11所示,下夾頭11A、11B相互遠離。此時,下夾頭11A、11B移動至俯視時不與由複數個支持銷41支持之基板W重疊之位置。藉此,上側保持裝置10A、10B均返回至初始狀態。Next, as shown by the thick solid arrow a11 in FIG. 12 , the
接下來,如圖13中粗的實線箭頭a12所示,以複數個支持銷41之上端部位於較吸附保持部21更靠下方之方式,使銷連結構件42下降。藉此,支持於複數個支持銷41上之基板W被吸附保持部21接收。於該狀態下,吸附保持部21吸附保持基板W之下表面中央區域。如此一來,由下側保持裝置20吸附保持之基板W之中心於俯視下與平面基準位置rp重疊或大致重疊。此時之基板W之位置為搬出位置。因此,於本例中,搬出位置處於搬入位置之下方。於銷連結構件42下降之同時或銷連結構件42之下降完成之後,如圖13中粗的實線箭頭a13所示,處理杯61自下杯位置上升至上杯位置。藉此,處於搬出位置之基板W位於較處理杯61之上端部更靠下方。Next, as shown by the thick solid arrow a12 in FIG. 13 , the
接下來,如圖14中粗的實線箭頭a14所示,吸附保持部21圍繞上下方向之軸(吸附保持驅動部22之旋轉軸之軸心)旋轉。藉此,被吸附保持部21吸附保持之基板W以水平姿勢旋轉。Next, as shown by the thick solid arrow a14 in FIG. 14 , the
接下來,上表面清洗裝置70之旋轉支持軸71旋轉,下降。藉此,如圖14中粗的實線箭頭a15所示,噴霧嘴73移動至基板W之上方之位置,以噴霧嘴73與基板W之間之距離成為預先規定之距離之方式下降。於該狀態下,噴霧嘴73對基板W之上表面噴射清洗液與氣體之混合流體。又,旋轉支持軸71旋轉。藉此,如圖14中粗的實線箭頭a16所示,噴霧嘴73移動至旋轉基板W之上方之位置。藉由對基板W之整個上表面噴射混合流體,來清洗基板W之整個上表面。Next, the
又,於利用噴霧嘴73清洗基板W之上表面時,端部清洗裝置80之旋轉支持軸81亦旋轉,下降。藉此,如圖14中粗的實線箭頭a17所示,斜面刷83移動至基板W之外周端部之上方之位置。又,以斜面刷83之外周面之中央部分接觸於基板W之外周端部之方式下降。於該狀態下,斜面刷83圍繞上下方向之軸旋轉(自轉)。藉此,附著於基板W之外周端部之污染物質被斜面刷83物理地剝離。自基板W之外周端部剝離之污染物質被自噴霧嘴73噴射至基板W之混合流體之清洗液沖洗。Moreover, when cleaning the upper surface of the board|substrate W with the
進而,於利用噴霧嘴73清洗基板W之上表面時,以下表面刷51之清洗面接觸於基板W之下表面外側區域之方式,使升降支持部54上升。又,如圖14中粗的實線箭頭a18所示,下表面刷51圍繞上下方向之軸旋轉(自轉)。進而,液體噴嘴52朝向基板W之下表面噴出清洗液,氣體噴出部53朝向基板W之下表面噴射氣體。於該狀態下,進而如圖14中粗的實線箭頭a19所示,移動支持部55於可動基座32上於接近位置與離開位置之間進行進退動作。如此,藉由利用移動支持部55於下表面刷51接觸於基板W之下表面之狀態下向水平方向移動,來擴大基板W之下表面中之下表面刷51能夠清洗之範圍。藉此,由吸附保持部21吸附保持且旋轉之基板W之下表面外側區域整體被下表面刷51清洗。Furthermore, when cleaning the upper surface of the substrate W with the
接下來,當基板W之上表面、外周端部及下表面外側區域之清洗完成後,停止自噴霧嘴73向基板W噴射混合流體。又,如圖15中粗的實線箭頭a20所示,噴霧嘴73移動至處理杯61之一側之位置(初始狀態之位置)。又,如圖15中粗的實線箭頭a21所示,斜面刷83移動至處理杯61之另一側之位置(初始狀態之位置)。進而,停止下表面刷51之旋轉,以下表面刷51之清洗面自基板W離開規定距離之方式,使升降支持部54下降。又,停止自液體噴嘴52向基板W噴出清洗液、及自氣體噴出部53向基板W噴射氣體。於該狀態下,藉由吸附保持部21高速地旋轉,而附著於基板W之清洗液被甩開,基板W整體進行乾燥。Next, after the cleaning of the upper surface, the outer peripheral end and the outer area of the lower surface of the substrate W is completed, the spraying of the mixed fluid from the
接下來,如圖16中粗的實線箭頭a22所示,處理杯61自上杯位置下降至下杯位置。藉此,處於搬出位置之基板W位於較處理杯61之上端部更靠上方。又,如圖16中粗的實線箭頭a23所示,使下夾頭11A、11B相互接近直至能夠支持新的基板W之位置為止,以備將新的基板W搬入至單元殼體2內。Next, as shown by the thick solid arrow a22 in FIG. 16 , the
最後,自基板清洗裝置1之單元殼體2內搬出基板W。具體而言,於即將搬出基板W之前擋板91打開搬入搬出口2x。於該時間點,於搬入位置不存在基板W。因此,圖1之主機器人300之機械手Ma於保持著下一個處理前之基板W之狀態下,通過搬入搬出口2x進入至單元殼體2內,將處理前之基板W交遞至搬入位置。然後,如圖17中粗的實線箭頭a24所示,機械手Ma接收搬出位置之處理後之基板W,自單元殼體2退出。於機械手Ma退出之後,擋板91將搬入搬出口2x封閉。Finally, the substrate W is unloaded from the
(5)基板處理(5) Substrate processing
圖18及圖19係表示圖5之控制裝置170進行之基板處理之流程圖。圖18及圖19之基板處理係藉由控制裝置170之CPU於RAM上執行存儲於記憶裝置之基板處理程式來進行。以下,使用圖18及圖19之流程圖對基板處理進行說明。18 and 19 are flowcharts showing substrate processing performed by the
再者,於圖18及圖19之流程圖中,主要記載了主機器人300之機械手Ma之動作,但機械手Mb~Md之動作亦與機械手Ma之動作相同。又,於圖18及圖19之流程圖中,省略了分度機械手200之動作之說明。18 and 19 , the operations of the manipulator Ma of the
首先,主機器人300將處理前之基板W利用各機械手Ma~Md自基板載置部PASS2搬出(步驟S1)。接下來,主機器人300使機械手Ma進入至對應之基板清洗裝置1之單元殼體2(步驟S2)。First, the
然後,主機器人300將於步驟S1中自基板載置部PASS2搬出之處理前之基板W利用機械手Ma交遞至搬入位置(步驟S3)。此時,於搬出位置不存在基板W。因此,主機器人300使機械手Ma自對應之基板清洗裝置1之單元殼體2退出(步驟S4)。又,主機器人300使用機械手Mb~Mc,對所對應之基板清洗裝置1依次執行與步驟S2~S4相同之處理。Then, the
接下來,各基板清洗裝置1執行圖6~圖17之清洗處理(步驟S5)。又,主機器人300將處理前之基板W利用各機械手Ma~Md自基板載置部PASS2搬出(步驟S6)。步驟S5與步驟S6亦可並列地執行。Next, each
於清洗處理結束之後,主機器人300使機械手Ma進入至對應之基板清洗裝置1之單元殼體2(步驟S7)。然後,主機器人300將於步驟S6中自基板載置部PASS2搬出之處理前之基板W利用機械手Ma交遞至搬入位置(步驟S8)。此時,於搬出位置存在步驟S5或下述步驟S11中被清洗處理後之基板W。After the cleaning process is finished, the
因此,主機器人300利用機械手Ma自搬出位置接收處理後之基板W(步驟S9)。然後,主機器人300使機械手Ma自對應之基板清洗裝置1之單元殼體2退出(步驟S10)。又,主機器人300使用機械手Mb~Mc,對所對應之基板清洗裝置1依次執行與步驟S7~S10相同之處理。Therefore, the
接下來,各基板清洗裝置1執行圖6~圖17之清洗處理(步驟S11)。又,主機器人300將於步驟S9中自搬出位置接收之處理後之各基板W利用機械手Ma~Md搬入至基板載置部PASS1(步驟S12)。步驟S11與步驟S12亦可並列地執行。Next, each
然後,控制裝置170判定是否結束基板處理(步驟S13)。控制裝置170可以於使用者給出結束指令之情形時,判定為結束基板處理。或者,控制裝置170亦可於執行了規定片數之基板W之清洗處理之情形時,判定為結束基板處理。於判定為結束基板處理之情形時,控制裝置170返回至步驟S6。於該情形時,反覆進行步驟S6~S13,直至判定為結束基板處理為止。Then, the
於判定為結束基板處理之情形時,主機器人300使機械手Ma進入至對應之基板清洗裝置1之單元殼體2(步驟S14)。此時,於搬出位置,存在步驟S11中經清洗處理後之基板W。因此,主機器人300利用機械手Ma自搬出位置接收處理後之基板W(步驟S15)。然後,主機器人300使機械手Ma自對應之基板清洗裝置1之單元殼體2退出(步驟S16)。又,主機器人300使用機械手Mb~Mc,對所對應之基板清洗裝置1依次執行與步驟S14~S16相同之處理。When it is determined that the substrate processing is terminated, the
最後,主機器人300將於步驟S15中自搬出位置接收之處理後之各基板W利用機械手Ma~Md搬入至基板載置部PASS1(步驟S17)。藉此,結束基板處理。Finally, the
(6)效果(6) Effect
於本實施方式之基板處理裝置100中,主機器人300之機械手Ma~Md進入至對應之基板清洗裝置1。由各機械手Ma~Md保持之處理前之基板W被交遞至對應之基板清洗裝置1之搬入位置。於將處理前之基板W交遞至搬入位置之後,利用各機械手Ma~Md自對應之基板清洗裝置1之搬出位置接收處理後之基板W。自搬出位置接收處理後之基板W之後,各機械手Ma~Md自對應之基板清洗裝置1退出。利用各基板清洗裝置1對處理前之基板W進行處理。In the
根據該構成,即便於各基板清洗裝置1存在處理後之基板W之情形時,亦能夠將處理前之基板W搬入至基板清洗裝置1。因此,可於利用機械手Ma~Md將處理前之基板W交遞至所對應之基板清洗裝置1之後,利用同一機械手Ma~Md接收處理後之基板W。因此,無須為了接收處理後之基板W而設置不保持基板W之機械手。又,能夠對複數個基板清洗裝置1連續地進行利用複數個機械手Ma~Md交遞處理前之基板W並且接收處理後之基板W之動作。藉此,可進一步提高產量。According to this configuration, even in the case where the substrate W after processing exists in each
又,於各基板清洗裝置1中,於搬入至搬入位置之基板W由上側保持裝置10A、10B保持之狀態下,利用下表面清洗裝置50進行下表面中央區域之清洗處理。接下來,利用交接裝置40將基板W進一步交遞至下側保持裝置20。然後,於基板W由下側保持裝置20保持之狀態下,利用下表面清洗裝置50進行下表面外側區域之清洗處理。藉此,能夠高效率地清洗基板W之整個下表面,且將清洗後之基板W自搬出位置搬出。由於搬入位置與搬出位置以於上下方向排列之方式配置,故而能夠減小基板清洗裝置1之設置地面面積(佔據面積)。Moreover, in each
又,如上所述,由於對1個基板清洗裝置1利用1個機械手進行基板之交遞及接收,故而於因機械手之不良而產生基板W斷裂等搬送不良之情形時,能夠容易地特定出產生了問題之機械手。進而,由於產量提高,故而無須增大主機器人300之搬送速度。藉此,能夠提高搬送之穩定性。In addition, as described above, since a single robot is used to deliver and receive substrates to a single
(7)其他實施方式(7) Other Embodiments
(a)於上述實施方式中,搬出位置設置於搬入位置之下方,但實施方式並不限定於此。搬出位置亦可設置於搬入位置之上方。例如,亦可於下側保持裝置20之吸附保持部21之中心設置搬入位置,於上側保持裝置10A、10B間設置搬出位置。(a) In the above-mentioned embodiment, the carry-out position is provided below the carry-in position, but the embodiment is not limited to this. The carry-out position may also be provided above the carry-in position. For example, a carry-in position may be provided at the center of the
於該構成中,基板W被交遞至搬入位置,且最先由下側保持裝置20吸附保持,於此狀態下對其下表面中央區域、外周端部及上表面進行清洗。然後,由下側保持裝置20保持之基板W由上側保持裝置10A、10B接收,且保持於搬出位置。於該狀態下對基板W之下表面中央區域進行清洗。清洗後之基板W自上側保持裝置10A、10B被搬出至單元殼體2之外部。In this configuration, the substrate W is delivered to the carry-in position, and is sucked and held by the
或者,搬入位置與搬出位置亦可不按照於上下方向排列之方式配置。搬入位置與搬出位置例如亦可按照於水平方向排列之方式配置。Alternatively, the carry-in position and the carry-out position may not be arranged so as to be arranged in the vertical direction. The carry-in position and the carry-out position may be arranged, for example, so as to be aligned in the horizontal direction.
(b)於上述實施方式中,交接裝置40為交接部,於上側保持裝置10A、10B與下側保持裝置20之間交接基板W,但實施方式並不限定於此。於上側保持裝置10A、10B及下側保持裝置20中至少一者以能夠升降之方式構成之情形時,亦可不設置交接裝置40。於該情形時,上側保持裝置10A、10B及下側保持裝置20中至少一者為交接部,藉由使該交接部升降,而於上側保持裝置10A、10B與下側保持裝置20之間交接基板W。(b) In the above-described embodiment, the
(c)於上述實施方式中,主機器人300具有4個機械手Ma~Md,但實施方式並不限定於此。主機器人300亦可具有2個、3個或5個以上之機械手。又,較佳為於基板處理裝置100以與主機器人300之機械手對應之方式設置基板清洗裝置1。或者,主機器人300亦可具有1個機械手。於該情形時,亦能相應於機械手之數量而提高產量。(c) In the above-described embodiment, the
(d)於上述實施方式中,設置進行清洗處理之基板清洗裝置1作為處理單元,但實施方式並不限定於此。亦可設置進行熱處理之熱處理裝置、進行顯影處理之顯影裝置或進行塗佈處理之塗佈裝置等作為處理單元。又,熱處理裝置亦可構成為能夠對基板執行加熱處理與冷卻處理如此之互不相同之處理。顯影裝置亦可構成為能夠對基板執行正顯影與負顯影這樣的互不相同之處理。(d) In the above-described embodiment, the
(e)於上述實施方式中,對由上側保持裝置10A、10B保持之基板W與由下側保持裝置20保持之基板W進行互不相同之處理,但實施方式並不限定於此。亦可對由上側保持裝置10A、10B保持之基板W與由下側保持裝置20保持之基板W進行相同之處理。或者,亦可不對由上側保持裝置10A、10B保持之基板W或由下側保持裝置20保持之基板W進行處理。(e) In the above-described embodiment, the substrates W held by the
(f)於上述實施方式中,基板處理裝置100包含對基板清洗裝置1及主機器人300等進行控制之控制裝置170,但實施方式並不限定於此。於基板清洗裝置1及主機器人300構成為能夠利用基板處理裝置100之外部之資訊處理裝置來控制之情形時,基板處理裝置100亦可不包含控制裝置170。(f) In the above-described embodiment, the
(8)技術方案之各構成要素與實施方式之各部之對應關係(8) Correspondence between each component of the technical solution and each part of the embodiment
以下,對技術方案之各構成要素與實施方式之各要素之對應例進行說明,但本發明並不限定於下述例子。關於技術方案之各構成要素,亦可使用具有技術方案中所記載之構成或功能之其他各種要素。Hereinafter, the correspondence example of each component of the invention and each element of the embodiment will be described, but the present invention is not limited to the following examples. For each component of the technical solution, other various components having the structure or function described in the technical solution can also be used.
於上述實施方式中,基板W係基板之例子,基板清洗裝置1係處理單元之例子,機械手Ma~Md係搬送保持部之例子,主機器人300係基板搬送部之例子,基板處理裝置100係基板處理裝置之例子。上側保持裝置10A、10B係第1基板保持部之例子,下表面清洗裝置50係第1及第2處理部之例子,下側保持裝置20係第2基板保持部之例子,交接裝置40係交接部之例子。In the above-described embodiment, the substrate W is an example of a substrate, the
1:基板清洗裝置 2:單元殼體 2a:底面部 2b:側壁部 2c:側壁部 2d:側壁部 2e:側壁部 2x:搬入搬出口 10A:上側保持裝置 10B:上側保持裝置 11A:下夾頭 11B:下夾頭 12A:上夾頭 12B:上夾頭 13A:下夾頭驅動部 13B:下夾頭驅動部 14A:上夾頭驅動部 14B:上夾頭驅動部 20:下側保持裝置 21:吸附保持部 22:吸附保持驅動部 30:基座裝置 31:線性導軌 32:可動基座 33:基座驅動部 40:交接裝置 41:支持銷 42:銷連結構件 43:銷升降驅動部 50:下表面清洗裝置 51:下表面刷 52:液體噴嘴 53:氣體噴出部 54:升降支持部 54u:上表面 55:移動支持部 55a:下表面刷旋轉驅動部 55b:下表面刷升降驅動部 55c:下表面刷移動驅動部 56:下表面清洗液供給部 57:噴出氣體供給部 60:杯裝置 61:處理杯 62:杯驅動部 70:上表面清洗裝置 71:旋轉支持軸 72:臂 73:噴霧嘴 74:上表面清洗驅動部 75:上表面清洗流體供給部 80:端部清洗裝置 81:旋轉支持軸 82:臂 83:斜面刷 84:斜面刷驅動部 90:開閉裝置 91:擋板 92:擋板驅動部 100:基板處理裝置 110:裝載區塊 120:處理區塊 140:載具載置台 150:搬送部 161:清洗部 162:清洗部 163:搬送部 170:控制裝置 171:夾頭控制部 172:吸附控制部 173:基座控制部 174:交接控制部 175:下表面清洗控制部 176:杯控制部 177:上表面清洗控制部 178:斜面清洗控制部 179:搬入搬出控制部 180:搬送控制部 181:搬送控制部 200:分度機械手 210:機械手支持構件 220:搬送驅動部 300:主機器人 310:機械手支持構件 320:搬送驅動部 C:載具 Ia~Id:機械手 Ma~Md:機械手 PASS1:基板載置部 PASS2:基板載置部 rp:平面基準位置 W:基板 1: Substrate cleaning device 2: Unit housing 2a: Bottom face 2b: side wall 2c: Side wall part 2d: side wall 2e: side wall 2x: move in and out 10A: Upper side holding device 10B: Upper side holding device 11A: Lower chuck 11B: Lower collet 12A: Upper chuck 12B: Upper chuck 13A: Lower chuck drive part 13B: Lower chuck drive part 14A: Upper chuck drive part 14B: Upper chuck drive part 20: Lower side holding device 21: Adsorption holding part 22: Adsorption and holding drive part 30: Pedestal unit 31: Linear guide 32: Movable base 33: Base drive part 40: Handover device 41: Support pin 42: Pin connecting member 43: Pin lift drive part 50: Lower surface cleaning device 51: Lower surface brush 52: Liquid Nozzle 53: Gas ejection part 54: Lifting support part 54u: upper surface 55: Mobile Support 55a: Lower surface brush rotation drive part 55b: Lower surface brush lift drive part 55c: Lower surface brush moving drive part 56: Lower surface cleaning liquid supply part 57: Ejection gas supply part 60: Cup Device 61: Processing Cup 62: Cup Drive 70: Upper surface cleaning device 71: Rotation support shaft 72: Arm 73: Spray Nozzle 74: Upper surface cleaning drive part 75: Upper surface cleaning fluid supply part 80: End cleaning device 81: Rotation support shaft 82: Arm 83: Bevel Brush 84: Inclined brush drive part 90: Opening and closing device 91: Baffle 92: Baffle drive part 100: Substrate processing device 110: Load Block 120: Processing blocks 140: Vehicle Mounting Table 150:Conveying Department 161: Cleaning Department 162: Cleaning Department 163: Transfer Department 170: Controls 171: Chuck control part 172: Adsorption control part 173: Base Control Department 174: Handover Control Department 175: Lower surface cleaning control section 176: Cup Control Department 177: Upper surface cleaning control section 178: Slope cleaning control unit 179: Move in and move out control department 180: Conveyance Control Department 181: Conveyance Control Department 200: Indexing manipulator 210: Robot Support Components 220: Conveying drive part 300: Main Robot 310: Robot support component 320: Conveying drive part C: vehicle Ia~Id: Robot Ma~Md: manipulator PASS1: Substrate mounting part PASS2: Substrate mounting part rp: plane reference position W: substrate
圖1係本發明之一實施方式之基板處理裝置之模式性俯視圖。 圖2係圖1之J-J線上之基板處理裝置之模式性剖視圖。 圖3係圖1之基板清洗裝置之模式性俯視圖。 圖4係表示圖3之基板清洗裝置之內部構成之外觀立體圖。 圖5係表示基板處理裝置之控制系統之構成之方塊圖。 圖6係用以說明圖3之基板清洗裝置之動作之一例之模式圖。 圖7係用以說明圖3之基板清洗裝置之動作之一例之模式圖。 圖8係用以說明圖3之基板清洗裝置之動作之一例之模式圖。 圖9係用以說明圖3之基板清洗裝置之動作之一例之模式圖。 圖10係用以說明圖3之基板清洗裝置之動作之一例之模式圖。 圖11係用以說明圖3之基板清洗裝置之動作之一例之模式圖。 圖12係用以說明圖3之基板清洗裝置之動作之一例之模式圖。 圖13係用以說明圖3之基板清洗裝置之動作之一例之模式圖。 圖14係用以說明圖3之基板清洗裝置之動作之一例之模式圖。 圖15係用以說明圖3之基板清洗裝置之動作之一例之模式圖。 圖16係用以說明圖3之基板清洗裝置之動作之一例之模式圖。 圖17係用以說明圖3之基板清洗裝置之動作之一例之模式圖。 圖18係表示圖5之控制裝置所進行之基板處理之流程圖。 圖19係表示圖5之控制裝置所進行之基板處理之流程圖。 FIG. 1 is a schematic plan view of a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of the substrate processing apparatus on line J-J of FIG. 1 . FIG. 3 is a schematic plan view of the substrate cleaning apparatus of FIG. 1 . FIG. 4 is an external perspective view showing the internal structure of the substrate cleaning apparatus of FIG. 3 . FIG. 5 is a block diagram showing the configuration of a control system of the substrate processing apparatus. FIG. 6 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of FIG. 3 . FIG. 7 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of FIG. 3 . FIG. 8 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of FIG. 3 . FIG. 9 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of FIG. 3 . FIG. 10 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of FIG. 3 . FIG. 11 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of FIG. 3 . FIG. 12 is a schematic view for explaining an example of the operation of the substrate cleaning apparatus of FIG. 3 . FIG. 13 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of FIG. 3 . FIG. 14 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of FIG. 3 . FIG. 15 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of FIG. 3 . FIG. 16 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of FIG. 3 . FIG. 17 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of FIG. 3 . FIG. 18 is a flowchart showing the substrate processing performed by the control device of FIG. 5 . FIG. 19 is a flowchart showing the substrate processing performed by the control device of FIG. 5 .
1:基板清洗裝置 1: Substrate cleaning device
100:基板處理裝置 100: Substrate processing device
110:裝載區塊 110: Load Block
120:處理區塊 120: Processing blocks
140:載具載置台 140: Vehicle Mounting Table
150:搬送部 150:Conveying Department
161:清洗部 161: Cleaning Department
162:清洗部 162: Cleaning Department
163:搬送部 163: Transfer Department
200:分度機械手 200: Indexing manipulator
210:機械手支持構件 210: Robot Support Components
220:搬送驅動部 220: Conveying drive part
300:主機器人 300: Main Robot
310:機械手支持構件 310: Robot support component
320:搬送驅動部 320: Conveying drive part
C:載具 C: vehicle
Ia~Id:機械手 Ia~Id: Robot
Ma~Md:機械手 Ma~Md: manipulator
PASS1:基板載置部 PASS1: Substrate mounting part
PASS2:基板載置部 PASS2: Substrate mounting part
W:基板 W: substrate
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JP2020157269A JP2022051028A (en) | 2020-09-18 | 2020-09-18 | Substrate processing device and substrate processing method |
JP2020-157269 | 2020-09-18 | ||
JP2020157268A JP7477410B2 (en) | 2020-09-18 | 2020-09-18 | Substrate Cleaning Equipment |
JP2020157267A JP7461842B2 (en) | 2020-09-18 | 2020-09-18 | SUBSTRATE CLEANING APPARATUS AND SUBSTRATE PROCESSING APPARATUS |
JP2020168777A JP7491805B2 (en) | 2020-10-05 | 2020-10-05 | Substrate cleaning apparatus and substrate cleaning method |
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