TW202213607A - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

Info

Publication number
TW202213607A
TW202213607A TW110134348A TW110134348A TW202213607A TW 202213607 A TW202213607 A TW 202213607A TW 110134348 A TW110134348 A TW 110134348A TW 110134348 A TW110134348 A TW 110134348A TW 202213607 A TW202213607 A TW 202213607A
Authority
TW
Taiwan
Prior art keywords
substrate
processing
unit
holding
processing unit
Prior art date
Application number
TW110134348A
Other languages
Chinese (zh)
Other versions
TWI808489B (en
Inventor
岡田吉文
Original Assignee
日商斯庫林集團股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2020157270A external-priority patent/JP2022051029A/en
Priority claimed from JP2020157269A external-priority patent/JP2022051028A/en
Priority claimed from JP2020157268A external-priority patent/JP7477410B2/en
Priority claimed from JP2020157267A external-priority patent/JP7461842B2/en
Priority claimed from JP2020168777A external-priority patent/JP7491805B2/en
Priority claimed from JP2020169411A external-priority patent/JP2022061415A/en
Application filed by 日商斯庫林集團股份有限公司 filed Critical 日商斯庫林集團股份有限公司
Publication of TW202213607A publication Critical patent/TW202213607A/en
Application granted granted Critical
Publication of TWI808489B publication Critical patent/TWI808489B/en

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67184Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706Mechanical details, e.g. roller, belt
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742Mechanical parts of transfer devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

The present invention relates to a substrate processing device and a substrate processing method. The manipulator of the main robot enters the processing unit. The unprocessed substrate held by the manipulator is handed over to the carry-in position of the processing unit. After the unprocessed substrate is handed over to the carry-in position, the processed substrate is received from the carry-out position of the processing unit by the manipulator. After receiving the processed substrate from the carry-out position, the manipulator is withdrawn from the processing unit. The unprocessed substrate is processed by the processing unit.

Description

基板處理裝置及基板處理方法Substrate processing apparatus and substrate processing method

本發明係關於一種對基板進行規定處理之基板處理裝置及基板處理方法。The present invention relates to a substrate processing apparatus and a substrate processing method for performing predetermined processing on a substrate.

使用基板處理裝置,來對液晶顯示裝置或有機EL(Electro Luminescence,電致發光)顯示裝置等中所使用之FPD(Flat Panel Display,平板顯示器)用基板、半導體基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用基板、陶瓷基板或太陽電池用基板等各種基板進行各種處理。Substrate processing equipment is used to process substrates for FPD (Flat Panel Display), semiconductor substrates, optical disk substrates, and magnetic disks used in liquid crystal display devices or organic EL (Electro Luminescence) display devices. Various processes are performed on various substrates such as substrates, substrates for magneto-optical discs, substrates for masks, ceramic substrates, and substrates for solar cells.

例如,日本專利特開2013-77639號公報中記載有一種基板處理裝置,其包含複數個處理單元及使用第1及第2機械手於複數個處理單元間搬送基板之搬送機構。複數個處理單元包含分別對基板進行熱處理、冷卻處理及塗佈處理之熱處理單元、冷卻單元及塗佈處理單元等。搬送機構以利用第1機械手保持基板且不利用第2機械手保持基板之狀態於複數個處理單元間移動。又,搬送機構自搬送目的地之處理單元將處理後之基板利用第2機械手搬出,並且將利用第1機械手保持之處理前之基板搬入至該處理單元。For example, Japanese Patent Laid-Open No. 2013-77639 describes a substrate processing apparatus including a plurality of processing units and a transfer mechanism that uses first and second robots to transfer a substrate between the plurality of processing units. The plurality of treatment units include a heat treatment unit, a cooling unit, a coating treatment unit, and the like, which respectively perform heat treatment, cooling treatment, and coating treatment on the substrate. The conveyance mechanism moves among the plurality of processing units in a state where the substrate is held by the first robot and the substrate is not held by the second robot. Moreover, the transfer mechanism carries out the processed substrate from the processing unit of the transfer destination by the second robot, and carries the unprocessed substrate held by the first robot into the processing unit.

於日本專利特開2013-77639號公報中所記載之基板處理裝置中,利用搬送機構之第1及第2機械手連續地進行自處理單元搬出處理後之基板與向處理單元搬入處理前之基板。因此,認為產量提高。然而,為了自搬送目的地之處理單元搬出處理後之基板,搬送機構必須以任一機械手不保持基板之狀態於複數個處理單元間移動。於該情形時,一次搬送之基板片數只能少於機械手之數量,故而於提高產量方面存在限制。In the substrate processing apparatus described in Japanese Patent Laid-Open No. 2013-77639, the first and second robots of the conveying mechanism continuously carry out the unloading of the processed substrate from the processing unit and the loading of the unprocessed substrate into the processing unit. . Therefore, the yield is considered to be improved. However, in order to carry out the processed substrate from the processing unit of the transfer destination, the transfer mechanism must move among the plurality of processing units in a state in which any one of the robots does not hold the substrate. In this case, the number of substrates conveyed at one time can only be less than the number of robots, so there is a limit in increasing the output.

本發明之目的在於提供一種能夠提高產量之基板處理裝置及基板處理方法。An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of increasing the throughput.

(1)本發明之一態樣之基板處理裝置具備:處理單元,其具有供搬入處理前之基板之搬入位置與搬出處理後之基板之搬出位置,並對處理前之基板進行處理;及基板搬送部,其具有搬送保持部,該搬送保持部構成為能夠選擇性地保持處理前及處理後之基板;搬送保持部於保持處理前之基板進入至處理單元且將處理前之基板交遞至搬入位置之後,自搬出位置接收處理後之基板,於接收處理後之基板之後自處理單元退出。(1) A substrate processing apparatus according to an aspect of the present invention includes: a processing unit having a carry-in position for carrying in a substrate before processing and a carry-out position for carrying out a substrate after processing, and processing the substrate before processing; and a substrate The conveying part has a conveying and holding part configured to selectively hold the substrates before and after processing; After the carry-in position, the processed substrate is received from the carry-out position, and the processed substrate is withdrawn from the processing unit after receiving the processed substrate.

於該基板處理裝置中,基板搬送部之搬送保持部進入至處理單元。將由搬送保持部保持之處理前之基板交遞至處理單元之搬入位置。於將處理前之基板交遞至搬入位置之後,利用搬送保持部自處理單元之搬出位置接收處理後之基板。於自搬出位置接收處理後之基板之後,使搬送保持部自處理單元退出。利用處理單元對處理前之基板進行處理。In this substrate processing apparatus, the conveyance holding part of the substrate conveyance part enters the processing unit. The substrate before processing held by the transfer holding unit is handed over to the transfer position of the processing unit. After the substrate before processing is handed over to the carrying-in position, the processed substrate is received from the carrying-out position of the processing unit by the transfer holding part. After receiving the processed substrate from the unloading position, the transport holding portion is withdrawn from the processing unit. The substrate before processing is processed by the processing unit.

根據該構成,即便於處理單元存在處理後之基板之情形時,亦能夠將處理前之基板搬入至處理單元。因此,可於將處理前之基板交遞至處理單元之後,利用該搬送保持部接收處理後之基板。因此,無須為了接收處理後之基板而設置不保持基板之搬送保持部。藉此,能夠相應於搬送保持部之數量而提高產量。According to this configuration, even when there is a substrate after processing in the processing unit, the substrate before processing can be carried into the processing unit. Therefore, after the substrate before processing is handed over to the processing unit, the substrate after processing can be received by the transfer and holding portion. Therefore, it is not necessary to provide a conveyance holding portion that does not hold the substrate in order to receive the processed substrate. Thereby, the throughput can be improved according to the number of conveyance holding parts.

(2)搬入位置與搬出位置亦可按照於上下方向排列之方式配置。於該情形時,能夠減小處理單元之設置地面面積(佔據面積)。(2) The carry-in position and the carry-out position may also be arranged so as to be arranged in the up-down direction. In this case, the installation floor area (occupied area) of the processing unit can be reduced.

(3)亦可為處理單元設置有複數個,搬送保持部以與複數個處理單元分別對應之方式設置有複數個,複數個基板搬送部分別於進入對應之處理單元將處理前之基板交遞至搬入位置之後,自搬出位置接收處理後之基板,於接收處理後之基板之後自對應之處理單元退出。於該情形時,能夠對複數個處理單元連續地進行交遞處理前之基板並且接收處理後之基板之動作。藉此,可進一步提高產量。(3) A plurality of processing units may be provided, and a plurality of conveying and holding parts may be provided in a manner corresponding to the plurality of processing units, respectively, and the plurality of substrate conveying parts enter the corresponding processing units and deliver the substrates before processing. After reaching the carry-in position, the processed substrate is received from the carry-out position, and then withdrawn from the corresponding processing unit after receiving the processed substrate. In this case, the operations of handing over the substrate before processing and receiving the substrate after processing can be continuously performed to a plurality of processing units. Thereby, the yield can be further improved.

(4)處理單元亦可包含:第1基板保持部,其保持被搬入至搬入位置之基板;第1處理部,其對由第1基板保持部保持之基板進行處理;第2基板保持部,其保持自搬出位置搬入之基板;交接部,其將由第1處理部處理之基板自第1基板保持部交遞至第2基板保持部;以及第2處理部,其對由第2基板保持部保持之基板進行處理。於該情形時,能夠將搬入至搬入位置並由第1及第2處理部處理後之基板作為處理後之基板自搬出位置搬出。(4) The processing unit may further include: a first substrate holding part for holding the substrate carried in to the carrying position; a first processing part for processing the substrate held by the first substrate holding part; and a second substrate holding part, It holds the substrates brought in from the unloading position; a handover part, which hands over the substrates processed by the first processing part from the first substrate holding part to the second substrate holding part; and a second processing part, which is opposite to the second substrate holding part Hold the substrate for processing. In this case, the board|substrate which was carried in to the carry-in position and processed by the 1st and 2nd processing part can be carried out from the carry-out position as a processed board|substrate.

(5)第1處理部與第2處理部亦可對基板進行互不相同之處理。於該情形時,能夠對基板高效率地進行不同之處理。(5) The first processing unit and the second processing unit may perform different processing on the substrate. In this case, the substrates can be efficiently processed differently.

(6)亦可為第1處理部進行基板之下表面中央區域之清洗處理,第2處理部進行基板之包圍下表面中央區域之下表面外側區域之清洗處理。於該情形時,能夠高效率地進行基板之整個下表面之清洗處理。(6) The first processing unit may perform cleaning processing of the central area of the lower surface of the substrate, and the second processing unit may perform cleaning processing of the outer area of the lower surface surrounding the lower surface central area of the substrate. In this case, the cleaning process of the whole lower surface of a board|substrate can be performed efficiently.

(7)本發明之另一態樣之基板處理方法包含如下步驟:使基板搬送部之搬送保持部進入至處理單元;將由搬送保持部保持之處理前之基板交遞至處理單元之搬入位置;於將處理前之基板交遞至搬入位置之後,利用搬送保持部自處理單元之搬出位置接收處理後之基板;於自搬出位置接收處理後之基板之後,使搬送保持部自處理單元退出;以及利用處理單元對處理前之基板進行處理。(7) A substrate processing method according to another aspect of the present invention includes the steps of: entering the transfer holding part of the substrate transfer part into the processing unit; handing over the substrate before processing held by the transfer holding part to the loading position of the processing unit; After the substrate before processing is handed over to the carry-in position, the transfer holding part is used to receive the processed substrate from the carry-out position of the processing unit; after receiving the processed substrate from the carry-out position, the transfer holding part is withdrawn from the processing unit; and The substrate before processing is processed by the processing unit.

根據該基板處理方法,即便於處理單元存在處理後之基板之情形時,亦能夠將處理前之基板搬入至處理單元。因此,可於將處理前之基板交遞至處理單元之後,利用該搬送保持部接收處理後之基板。因此,無須為了接收處理後之基板而設置不保持基板之搬送保持部。藉此,能夠相應於搬送保持部之數量而提高產量。According to this substrate processing method, even when there is a processed substrate in the processing unit, the substrate before processing can be carried into the processing unit. Therefore, after the substrate before processing is handed over to the processing unit, the substrate after processing can be received by the transfer and holding portion. Therefore, it is not necessary to provide a conveyance holding portion that does not hold the substrate in order to receive the processed substrate. Thereby, the throughput can be improved according to the number of conveyance holding parts.

以下,使用圖式對本發明之實施方式之基板處理裝置及基板處理方法進行說明。於以下之說明中,所謂基板,係指半導體基板(晶圓)、液晶顯示裝置或有機EL(Electro Luminescence)顯示裝置等FPD(Flat Panel Display)用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用基板、陶瓷基板或太陽電池用基板等。又,於本實施方式中,基板之上表面為電路形成面(正面),基板之下表面為與電路形成面相反側之面(背面)。又,於本實施方式中,基板除了凹口以外具有圓形狀。Hereinafter, a substrate processing apparatus and a substrate processing method according to an embodiment of the present invention will be described with reference to the drawings. In the following description, the term "substrate" refers to a semiconductor substrate (wafer), a substrate for FPD (Flat Panel Display) such as a liquid crystal display device or an organic EL (Electro Luminescence) display device, a substrate for an optical disc, a substrate for a magnetic disc, a magnetic Optical disc substrates, photomask substrates, ceramic substrates or solar cell substrates, etc. Moreover, in this embodiment, the upper surface of a board|substrate is a circuit formation surface (front surface), and the lower surface of a board|substrate is a surface (back surface) opposite to a circuit formation surface. Moreover, in this embodiment, the board|substrate has a circular shape except a notch.

(1)基板處理裝置之構成(1) Configuration of substrate processing apparatus

圖1係本發明之一實施方式之基板處理裝置之模式性俯視圖。圖2係圖1之J-J線上之基板處理裝置100之模式性剖視圖。如圖1所示,本實施方式之基板處理裝置100具有裝載區塊110及處理區塊120。裝載區塊110及處理區塊120以相互相鄰之方式設置。FIG. 1 is a schematic plan view of a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of the substrate processing apparatus 100 on line J-J of FIG. 1 . As shown in FIG. 1 , the substrate processing apparatus 100 of this embodiment has a loading block 110 and a processing block 120 . The loading block 110 and the processing block 120 are arranged adjacent to each other.

裝載區塊110包含複數個(於本例中為4個)載具載置台140及搬送部150。複數個載具載置台140連接於搬送部150,且以隔開間隔地排列成一列之方式配置。於各載具載置台140上,載置收納複數片基板W之載具C。The loading block 110 includes a plurality of (four in this example) carrier mounts 140 and a conveyance unit 150 . The plurality of carrier mounts 140 are connected to the conveyance unit 150, and are arranged in a row at intervals. On each carrier mounting table 140, a carrier C that accommodates a plurality of substrates W is mounted.

於搬送部150設置有分度機械手200及控制裝置170。分度機械手200包含複數個(於本例中為4個)機械手Ia、Ib、Ic、Id、機械手支持構件210及搬送驅動部220。An indexing robot 200 and a control device 170 are provided in the conveying unit 150 . The indexing robot 200 includes a plurality of (four in this example) robots Ia, Ib, Ic, and Id, a robot supporting member 210 , and a conveyance driving unit 220 .

複數個機械手Ia~Id構成為能夠分別保持複數個基板W,且以於上下方向以固定間隔排列之狀態設置於機械手支持構件210上。機械手支持構件210以沿一方向延伸之方式形成,且支持複數個機械手Ia~Id以使複數個機械手Ia~Id能夠於上述一方向上進退。搬送驅動部220構成為能夠於水平方向(複數個載具載置台140排列之方向)移動,以能夠圍繞鉛直軸旋轉且升降之方式支持機械手支持構件210。進而,搬送驅動部220包含複數個馬達及氣缸等,為了利用複數個機械手Ia~Id搬送複數個基板W,而使機械手支持構件210於水平方向移動,使機械手支持構件210圍繞鉛直軸旋轉並升降。又,搬送驅動部220使複數個機械手Ia~Id於水平方向進退。控制裝置170包括包含CPU(Central Processing Unit,中央運算處理裝置)、RAM(Random Access Memory,隨機存取記憶體)及ROM(Read Only Memory,唯讀記憶體)及記憶裝置之電腦等,控制基板處理裝置100內之各構成部。The plurality of robots Ia to Id are configured to be able to hold the plurality of substrates W, respectively, and are provided on the robot support member 210 in a state of being arranged at regular intervals in the vertical direction. The manipulator supporting member 210 is formed to extend in one direction, and supports the plurality of manipulators Ia to Id so that the plurality of manipulators Ia to Id can advance and retreat in the one direction. The conveyance drive unit 220 is configured to be movable in the horizontal direction (the direction in which the plurality of carrier mounts 140 are arranged), and supports the manipulator support member 210 so as to be rotatable around a vertical axis and to ascend and descend. Furthermore, the conveyance drive unit 220 includes a plurality of motors, air cylinders, and the like, and moves the robot support member 210 in the horizontal direction so that the robot support member 210 surrounds the vertical axis in order to convey the plurality of substrates W by the plurality of robots Ia to Id. Rotate and lift. In addition, the conveyance drive unit 220 advances and retreats the plurality of robots Ia to Id in the horizontal direction. The control device 170 includes a computer including a CPU (Central Processing Unit), a RAM (Random Access Memory), a ROM (Read Only Memory) and a memory device, and the like, and a control substrate. Each component in the processing apparatus 100.

處理區塊120包含清洗部161、162及搬送部163。清洗部161、搬送部163及清洗部162與搬送部150相鄰,並且依次排列配置。於清洗部161、162中,複數個(例如4個)基板清洗裝置1上下積層配置。各基板清洗裝置1具有供搬入處理前之基板W之搬入位置、及搬出處理後之基板W之搬出位置。關於基板清洗裝置1之構成及動作之詳細情況將於下文敍述。The processing block 120 includes cleaning units 161 and 162 and a conveying unit 163 . The cleaning unit 161, the conveying unit 163, and the cleaning unit 162 are adjacent to the conveying unit 150, and are arranged in this order. In the cleaning sections 161 and 162, a plurality of (for example, four) substrate cleaning apparatuses 1 are arranged in layers on top of each other. Each substrate cleaning apparatus 1 has a carry-in position into which the substrate W before processing is carried in, and a carry-out position for carrying out the substrate W after processing. Details of the configuration and operation of the substrate cleaning apparatus 1 will be described below.

於搬送部163設置有主機器人300。主機器人300包含複數個(於本例中為4個)機械手Ma、Mb、Mc、Md、機械手支持構件310及搬送驅動部320。複數個機械手Ma~Md構成為能夠分別保持複數個基板W,且以於上下方向排列之狀態設置於機械手支持構件310上。The main robot 300 is installed in the conveyance part 163 . The main robot 300 includes a plurality of (four in this example) manipulators Ma, Mb, Mc, and Md, a manipulator support member 310 , and a conveyance drive unit 320 . The plurality of robots Ma to Md are configured to be able to hold the plurality of substrates W, respectively, and are provided on the robot support member 310 in a state of being aligned in the up-down direction.

機械手支持構件310以沿一方向延伸之方式形成,且支持複數個機械手Ma~Md以使複數個機械手Ma~Md能夠於該一方向上分別獨立地進退。搬送驅動部320支持機械手支持構件310使之能夠圍繞鉛直軸旋轉且升降。進而,搬送驅動部320包含複數個馬達及氣缸等,機械手支持構件310圍繞鉛直軸旋轉並升降,以利用複數個機械手Ma~Md搬送複數個基板W。又,搬送驅動部320使複數個機械手Ma~Md於水平方向進退。The manipulator support member 310 is formed to extend in one direction, and supports the plurality of manipulators Ma to Md so that the plurality of manipulators Ma to Md can advance and retreat independently in the one direction. The conveyance drive unit 320 supports the robot support member 310 so as to be able to rotate about the vertical axis and to ascend and descend. Further, the conveyance drive unit 320 includes a plurality of motors, air cylinders, and the like, and the robot support member 310 rotates around a vertical axis and moves up and down to convey the plurality of substrates W by the plurality of robots Ma to Md. Moreover, the conveyance drive part 320 advances and retreats the several manipulators Ma-Md in the horizontal direction.

於裝載區塊110與處理區塊120之間,上下積層配置有用以於分度機械手200與主機器人300之間進行基板W交接之複數個(於本例中為4個)基板載置部PASS1及複數個基板載置部PASS2。複數個基板載置部PASS1位於較複數個(於本例中為4個)基板載置部PASS2靠上方。Between the loading block 110 and the processing block 120 , a plurality of (four in this example) substrate mounting portions for transferring the substrates W between the indexing robot 200 and the main robot 300 are arranged in the upper and lower layers. PASS1 and a plurality of substrate placement portions PASS2. The plurality of substrate placement portions PASS1 are located above the plurality of (four in this example) substrate placement portions PASS2.

複數個基板載置部PASS2用於自分度機械手200對主機器人300交遞基板W。複數個基板載置部PASS1用於自主機器人300對分度機械手200交遞基板W。複數個基板載置部PASS1間之間隔亦可與主機器人300之複數個機械手Ma~Md之間之間隔大致相等。同樣地,複數個基板載置部PASS2間之間隔亦可與主機器人300之複數個機械手Ma~Md之間之間隔大致相等。The plurality of substrate placement portions PASS2 are used to deliver the substrates W to the main robot 300 from the index robot 200 . The plurality of substrate placement portions PASS1 are used for handing over the substrate W to the indexing robot 200 by the autonomous robot 300 . The interval between the plurality of substrate placement portions PASS1 may be substantially equal to the interval between the plurality of robots Ma to Md of the main robot 300 . Similarly, the interval between the plurality of substrate placement portions PASS2 may be substantially equal to the interval between the plurality of robots Ma to Md of the main robot 300 .

分度機械手200自載置於複數個載具載置台140上之複數個載具C之任一個載具C取出處理前之基板W。又,分度機械手200將所取出之處理前之基板W載置於複數個基板載置部PASS2之任一個基板載置部PASS2。進而,分度機械手200接收載置於複數個基板載置部PASS1之任一個基板載置部PASS1之處理後之基板W,並將其收容於空之載具C內。The indexing robot 200 takes out the substrate W before processing from any one of the carriers C mounted on the carrier mounts 140 . Moreover, the index robot 200 mounts the taken out substrate W before processing on any one of the substrate placement portions PASS2 of the plurality of substrate placement portions PASS2. Furthermore, the indexing robot 200 receives the processed substrate W placed on any one of the substrate placement portions PASS1 of the plurality of substrate placement portions PASS1, and accommodates it in the empty carrier C.

主機器人300利用複數個機械手Ma~Md分別接收載置於複數個基板載置部PASS2之複數個處理前之基板W。此時,主機器人300亦可利用複數個機械手Ma~Md依次接收複數個基板W。於複數個基板載置部PASS2間之間隔與複數個機械手Ma~Md之間之間隔大致相等之情形時,主機器人300亦可利用複數個機械手Ma~Md同時接收複數個基板W。The main robot 300 receives the plurality of pre-processed substrates W placed on the plurality of substrate placement portions PASS2 by the plurality of robots Ma to Md, respectively. At this time, the main robot 300 may sequentially receive the plurality of substrates W by using the plurality of robots Ma to Md. When the interval between the plurality of substrate placement portions PASS2 is substantially equal to the interval between the plurality of robots Ma-Md, the master robot 300 may simultaneously receive the plurality of substrates W by using the plurality of robots Ma-Md.

接下來,主機器人300將自基板載置部PASS2利用複數個機械手Ma~Md接收之複數個處理前之基板W分別交遞至清洗部161或清洗部162之複數個基板清洗裝置1之搬入位置。然後,主機器人300利用複數個機械手Ma~Md分別接收載置於複數個基板清洗裝置1之搬出位置之複數個處理後之基板W。Next, the main robot 300 delivers the plurality of pre-processed substrates W received from the substrate placement unit PASS2 by the plurality of robots Ma to Md to the cleaning unit 161 or the plurality of substrate cleaning apparatuses 1 of the cleaning unit 162, respectively. Location. Then, the main robot 300 uses the plurality of robots Ma to Md to receive the plurality of processed substrates W placed on the unloading positions of the plurality of substrate cleaning apparatuses 1, respectively.

然後,主機器人300將自基板清洗裝置1利用複數個機械手Ma~Md接收之複數個處理後之基板W分別載置於複數個基板載置部PASS1。此時,主機器人300亦可將複數個處理後之基板W依次載置於複數個基板載置部PASS1。於複數個基板載置部PASS1間之間隔與複數個機械手Ma~Md之間之間隔大致相等之情形時,主機器人300亦可利用複數個機械手Ma~Md將複數個基板W同時載置於複數個基板載置部PASS1。Then, the main robot 300 mounts the plurality of processed substrates W received from the substrate cleaning apparatus 1 by the plurality of robots Ma to Md on the plurality of substrate placement portions PASS1, respectively. At this time, the main robot 300 may sequentially place a plurality of processed substrates W on a plurality of substrate placement portions PASS1. When the interval between the plurality of substrate placement portions PASS1 is substantially equal to the interval between the plurality of robots Ma to Md, the main robot 300 may also use the plurality of robots Ma to Md to simultaneously place the plurality of substrates W on the plurality of substrate placement portions PASS1.

(2)基板清洗裝置之構成(2) The structure of the substrate cleaning device

圖3係圖1之基板清洗裝置1之模式性俯視圖。圖4係表示圖3之基板清洗裝置1之內部構成之外觀立體圖。於基板清洗裝置1中,為了明確位置關係而定義相互正交之X方向、Y方向及Z方向。於圖3及圖4以後之規定圖中,X方向、Y方向及Z方向適當利用箭頭表示。X方向及Y方向於水平面內相互正交,Z方向相當於鉛直方向。FIG. 3 is a schematic plan view of the substrate cleaning apparatus 1 of FIG. 1 . FIG. 4 is an external perspective view showing the internal structure of the substrate cleaning apparatus 1 of FIG. 3 . In the substrate cleaning apparatus 1, the X direction, the Y direction, and the Z direction which are orthogonal to each other are defined in order to clarify the positional relationship. In FIGS. 3 and 4 and subsequent drawings, the X direction, the Y direction, and the Z direction are indicated by arrows as appropriate. The X direction and the Y direction are orthogonal to each other in the horizontal plane, and the Z direction corresponds to the vertical direction.

如圖3所示,基板清洗裝置1具備上側保持裝置10A、10B、下側保持裝置20、基座裝置30、交接裝置40、下表面清洗裝置50、杯裝置60、上表面清洗裝置70、端部清洗裝置80及開閉裝置90。該等構成要素設置於單元殼體2內。於圖3中,利用虛線表示單元殼體2。As shown in FIG. 3 , the substrate cleaning apparatus 1 includes upper holding apparatuses 10A and 10B, lower holding apparatus 20 , susceptor apparatus 30 , delivery apparatus 40 , lower surface cleaning apparatus 50 , cup apparatus 60 , upper surface cleaning apparatus 70 , end Part cleaning device 80 and opening and closing device 90 are provided. These constituent elements are provided in the unit case 2 . In FIG. 3 , the unit case 2 is indicated by a broken line.

單元殼體2具有矩形之底面部2a、及自底面部2a之4條邊向上方延伸之4個側壁部2b、2c、2d、2e。側壁部2b、2c相互對向,側壁部2d、2e相互對向。於側壁部2b之中央部,形成有矩形之開口。該開口為基板W之搬入搬出口2x,於相對於單元殼體2搬入及搬出基板W時使用。於圖4中,利用粗虛線表示搬入搬出口2x。於以下之說明中,將Y方向中自單元殼體2之內部經過搬入搬出口2x朝向單元殼體2之外側之方向(自側壁部2c朝向側壁部2b之方向)稱為前方,將其相反方向(自側壁部2b朝向側壁部2c之方向)稱為後方。The unit case 2 has a rectangular bottom surface portion 2a, and four side wall portions 2b, 2c, 2d, and 2e extending upward from four sides of the bottom surface portion 2a. The side wall portions 2b and 2c are opposed to each other, and the side wall portions 2d and 2e are opposed to each other. A rectangular opening is formed in the central portion of the side wall portion 2b. This opening is the loading and unloading port 2 x of the substrate W, and is used when loading and unloading the substrate W with respect to the unit case 2 . In FIG. 4, the carry-in/outlet 2x is shown by the thick broken line. In the following description, the direction from the inside of the unit case 2 to the outside of the unit case 2 (the direction from the side wall portion 2 c to the side wall portion 2 b ) from the inside of the unit case 2 through the carry-in/out port 2 x is referred to as the front, and the opposite direction is referred to as the front. The direction (direction from the side wall portion 2b toward the side wall portion 2c) is referred to as the rear.

於側壁部2b中之搬入搬出口2x之形成部分及其附近之區域,設置有開閉裝置90。開閉裝置90包含構成為能夠將搬入搬出口2x打開及封閉之擋板91、及驅動擋板91之擋板驅動部92。於圖4中,利用粗的二點鏈線表示擋板91。擋板驅動部92以於相對於基板清洗裝置1搬入及搬出基板W時打開搬入搬出口2x之方式驅動擋板91。又,擋板驅動部92以於基板清洗裝置1中對基板W進行清洗處理時關閉搬入搬出口2x之方式驅動擋板91。The opening and closing device 90 is provided in the area|region of the formation part and the vicinity of the carrying-in/outlet opening 2x in the side wall part 2b. The opening and closing device 90 includes a shutter 91 configured to be able to open and close the carry-in/out port 2 x , and a shutter drive section 92 that drives the shutter 91 . In FIG. 4 , the baffle plate 91 is indicated by a thick two-dot chain line. The shutter drive unit 92 drives the shutter 91 so as to open the loading and unloading port 2 x when the substrate W is loaded and unloaded from the substrate cleaning apparatus 1 . Moreover, the shutter drive part 92 drives the shutter 91 so that the carrying-in/outlet 2x may be closed when the board|substrate cleaning apparatus 1 performs the cleaning process of the board|substrate W.

於底面部2a之中央部,設置有基座裝置30。基座裝置30包含線性導軌31、可動基座32及基座驅動部33。線性導軌31包含2條軌道,且以俯視下自側壁部2b之附近沿Y方向延伸至側壁部2c之附近之方式設置。可動基座32以能夠於線性導軌31之2條軌道上沿Y方向移動之方式設置。基座驅動部33例如包含脈衝馬達,且於線性導軌31上使可動基座32沿Y方向移動。The base device 30 is provided in the center part of the bottom surface part 2a. The base device 30 includes a linear guide 31 , a movable base 32 and a base driving part 33 . The linear guide 31 includes two rails, and is provided so as to extend in the Y direction from the vicinity of the side wall portion 2b to the vicinity of the side wall portion 2c in a plan view. The movable base 32 is provided so as to be able to move in the Y direction on the two rails of the linear guide 31 . The base drive unit 33 includes, for example, a pulse motor, and moves the movable base 32 in the Y direction on the linear guide 31 .

於可動基座32上,下側保持裝置20及下表面清洗裝置50以排列於Y方向之方式設置。下側保持裝置20包含吸附保持部21及吸附保持驅動部22。吸附保持部21係所謂的旋轉夾頭,具有能夠吸附保持基板W之下表面之圓形吸附面,且構成為能夠圍繞沿上下方向延伸之軸(Z方向之軸)旋轉。於圖3中,利用二點鏈線表示由下側保持裝置20吸附保持之基板W之外形。於以下之說明中,於由吸附保持部21吸附保持基板W時,將基板W之下表面中應由吸附保持部21之吸附面吸附之區域,稱為下表面中央區域。另一方面,將基板W之下表面中包圍下表面中央區域之區域,稱為下表面外側區域。On the movable base 32 , the lower holding device 20 and the lower surface cleaning device 50 are arranged in the Y direction. The lower holding device 20 includes a suction holding part 21 and a suction holding driving part 22 . The suction-holding part 21 is a so-called rotary chuck, has a circular suction surface capable of suction-holding the lower surface of the substrate W, and is configured to be rotatable around an axis extending in the vertical direction (axis in the Z direction). In FIG. 3 , the outer shape of the substrate W that is sucked and held by the lower holding device 20 is indicated by a two-dot chain line. In the following description, when the substrate W is adsorbed and held by the adsorption holding portion 21 , the region on the lower surface of the substrate W that should be adsorbed by the adsorption surface of the adsorption holding portion 21 is referred to as the lower surface center region. On the other hand, among the lower surfaces of the substrate W, a region surrounding the central region of the lower surface is referred to as an outer region of the lower surface.

吸附保持驅動部22包含馬達。吸附保持驅動部22之馬達,以旋轉軸朝向上方突出之方式設置於可動基座32上。吸附保持部21安裝於吸附保持驅動部22之旋轉軸之上端部。又,於吸附保持驅動部22之旋轉軸中,形成有用以於吸附保持部21中吸附保持基板W之吸引路徑。該吸引路徑連接於未圖示之吸氣裝置。吸附保持驅動部22使吸附保持部21圍繞上述旋轉軸旋轉。The suction-holding drive unit 22 includes a motor. The motor for attracting and holding the driving part 22 is provided on the movable base 32 so that the rotating shaft protrudes upward. The suction-holding part 21 is attached to the upper end of the rotation shaft of the suction-holding driving part 22 . In addition, a suction path for sucking and holding the substrate W in the sucking and holding portion 21 is formed in the rotating shaft of the sucking and holding driving portion 22 . The suction path is connected to an unillustrated suction device. The suction-holding drive unit 22 rotates the suction-holding unit 21 around the above-described rotation axis.

於可動基座32上,於下側保持裝置20之附近進而設置有交接裝置40。交接裝置40包含複數個(於本例中為3個)支持銷41、銷連結構件42及銷升降驅動部43。銷連結構件42以俯視下包圍吸附保持部21之方式形成,且將複數個支持銷41連結。複數個支持銷41以利用銷連結構件42相互連結之狀態,自銷連結構件42向上方延伸固定長度。銷升降驅動部43於可動基座32上使銷連結構件42升降。藉此,複數個支持銷41相對於吸附保持部21相對性地升降。On the movable base 32 , a transfer device 40 is further disposed near the lower holding device 20 . The delivery device 40 includes a plurality of (three in this example) support pins 41 , a pin connection member 42 , and a pin lift drive unit 43 . The pin connection member 42 is formed so as to surround the suction holding portion 21 in plan view, and connects the plurality of support pins 41 . The plurality of support pins 41 extend upward from the pin connection member 42 by a fixed length in a state of being connected to each other by the pin connection member 42 . The pin elevating drive unit 43 elevates the pin coupling member 42 on the movable base 32 . Thereby, the plurality of support pins 41 move up and down relative to the suction holding portion 21 .

下表面清洗裝置50包含下表面刷51、2個液體噴嘴52、氣體噴出部53、升降支持部54、移動支持部55、下表面刷旋轉驅動部55a、下表面刷升降驅動部55b及下表面刷移動驅動部55c。移動支持部55設為於可動基座32上之固定區域內能夠相對於下側保持裝置20於Y方向移動。如圖4所示,升降支持部54可升降地設置於移動支持部55上。升降支持部54具有於遠離吸附保持部21之方向(於本例中為後方)向斜下方傾斜之上表面54u。The lower surface cleaning device 50 includes a lower surface brush 51, two liquid nozzles 52, a gas ejection part 53, a lift support part 54, a movement support part 55, a lower surface brush rotation drive part 55a, a lower surface brush lift drive part 55b, and a lower surface The brush movement drive unit 55c. The movement support portion 55 is provided in the fixed region on the movable base 32 to be movable in the Y direction relative to the lower holding device 20 . As shown in FIG. 4 , the elevating support part 54 is provided on the movement support part 55 so as to be able to rise and fall. The elevating support portion 54 has an upper surface 54u that is inclined downward obliquely in a direction away from the suction holding portion 21 (rear in this example).

如圖3所示,下表面刷51例如由PVA(聚乙烯醇)海綿或分散有研磨粒之PVA海綿形成,具有能夠接觸於基板W之下表面之圓形清洗面。又,下表面刷51以清洗面朝向上方之方式且以清洗面能夠圍繞經過該清洗面之中心且沿上下方向延伸之軸旋轉之方式,安裝於升降支持部54之上表面54u。下表面刷51之清洗面之面積大於吸附保持部21之吸附面之面積。As shown in FIG. 3 , the lower surface brush 51 is formed of, for example, a PVA (polyvinyl alcohol) sponge or a PVA sponge dispersed with abrasive particles, and has a circular cleaning surface capable of contacting the lower surface of the substrate W. In addition, the lower surface brush 51 is attached to the upper surface 54u of the lift support portion 54 so that the cleaning surface faces upward and the cleaning surface can rotate around an axis passing through the center of the cleaning surface and extending in the vertical direction. The area of the cleaning surface of the lower surface brush 51 is larger than the area of the adsorption surface of the adsorption holding part 21 .

2個液體噴嘴52分別以位於下表面刷51之附近且液體噴出口朝向上方之方式,安裝於升降支持部54之上表面54u上。於液體噴嘴52連接有下表面清洗液供給部56(圖5)。下表面清洗液供給部56對液體噴嘴52供給清洗液。液體噴嘴52於利用下表面刷51清洗基板W時,將自下表面清洗液供給部56供給之清洗液供給至基板W之下表面。於本實施方式中,使用純水(脫離子水)作為供給至液體噴嘴52之清洗液。再者,關於供給至液體噴嘴52之清洗液,亦可代替純水而使用碳酸水、臭氧水、氫水、電解離子水、SC1(氨與過氧化氫水之混合溶液)或TMAH(氫氧化四甲基銨)等。The two liquid nozzles 52 are respectively attached to the upper surface 54u of the lift support portion 54 so that they are located in the vicinity of the lower surface brush 51 and the liquid ejection ports face upward. A lower surface cleaning liquid supply part 56 ( FIG. 5 ) is connected to the liquid nozzle 52 . The lower surface cleaning liquid supply unit 56 supplies the cleaning liquid to the liquid nozzle 52 . The liquid nozzle 52 supplies the cleaning liquid supplied from the lower surface cleaning liquid supply unit 56 to the lower surface of the substrate W when the substrate W is cleaned with the lower surface brush 51 . In this embodiment, pure water (deionized water) is used as the cleaning liquid supplied to the liquid nozzle 52 . Furthermore, as for the cleaning liquid supplied to the liquid nozzle 52, carbonated water, ozone water, hydrogen water, electrolytic ionized water, SC1 (a mixed solution of ammonia and hydrogen peroxide water) or TMAH (hydrogen peroxide water) may be used instead of pure water. tetramethylammonium) etc.

氣體噴出部53係具有沿一方向延伸之氣體噴出口之狹縫狀氣體噴射噴嘴。氣體噴出部53以俯視下位於下表面刷51與吸附保持部21之間且氣體噴射口朝向上方之方式,安裝於升降支持部54之上表面54u。於氣體噴出部53連接有噴出氣體供給部57(圖5)。噴出氣體供給部57對氣體噴出部53供給氣體。於本實施方式中,使用氮氣作為供給至氣體噴出部53之氣體。氣體噴出部53於利用下表面刷51清洗基板W時及下述對基板W之下表面進行乾燥時,將自噴出氣體供給部57供給之氣體噴射至基板W之下表面。於該情形時,於下表面刷51與吸附保持部21之間,形成沿X方向延伸之帶狀氣簾。關於供給至氣體噴出部53之氣體,亦可代替氮氣而使用氬氣或氦氣等惰性氣體。The gas ejection portion 53 is a slit-shaped gas ejection nozzle having a gas ejection port extending in one direction. The gas ejection portion 53 is mounted on the upper surface 54u of the lift support portion 54 so as to be positioned between the lower surface brush 51 and the adsorption holding portion 21 in a plan view, and the gas ejection port faces upward. A blowing gas supply unit 57 ( FIG. 5 ) is connected to the gas blowing unit 53 . The ejection gas supply unit 57 supplies gas to the gas ejection unit 53 . In the present embodiment, nitrogen gas is used as the gas supplied to the gas ejection portion 53 . The gas ejection portion 53 ejects the gas supplied from the ejection gas supply portion 57 to the lower surface of the substrate W when cleaning the substrate W with the lower surface brush 51 and drying the lower surface of the substrate W as described below. In this case, a belt-shaped air curtain extending in the X direction is formed between the lower surface brush 51 and the suction holding part 21 . As for the gas supplied to the gas ejection part 53, inert gas, such as argon gas or helium gas, may be used instead of nitrogen gas.

下表面刷旋轉驅動部55a包含馬達,於利用下表面刷51清洗基板W時使下表面刷51旋轉。下表面刷升降驅動部55b包含步進馬達或氣缸,使升降支持部54相對於移動支持部55升降。下表面刷移動驅動部55c包含馬達,於可動基座32上使移動支持部55於Y方向移動。此處,下側保持裝置20於可動基座32上之位置被固定。因此,於利用下表面刷移動驅動部55c使移動支持部55於Y方向移動時,移動支持部55相對於下側保持裝置20相對性地移動。於以下之說明中,將於可動基座32上最接近下側保持裝置20時之下表面清洗裝置50之位置稱為接近位置,將於可動基座32上最遠離下側保持裝置20時之下表面清洗裝置50之位置稱為離開位置。The lower surface brush rotation drive unit 55 a includes a motor, and rotates the lower surface brush 51 when the substrate W is cleaned with the lower surface brush 51 . The lower surface brush lift drive unit 55 b includes a stepping motor or an air cylinder, and moves the lift support section 54 up and down with respect to the movement support section 55 . The lower surface brush movement drive part 55c includes a motor, and moves the movement support part 55 in the Y direction on the movable base 32 . Here, the position of the lower holding device 20 on the movable base 32 is fixed. Therefore, when the movement support part 55 is moved in the Y direction by the lower surface brush movement drive part 55c, the movement support part 55 moves relatively with respect to the lower holding device 20 . In the following description, the position of the lower surface cleaning device 50 on the movable base 32 when it is closest to the lower holding device 20 is referred to as an approaching position, and the position on the movable base 32 when it is farthest from the lower holding device 20 is referred to as an approaching position. The position of the lower surface cleaning device 50 is called an exit position.

於底面部2a之中央部,進而設置有杯裝置60。杯裝置60包含處理杯61及杯驅動部62。處理杯61以俯視下包圍下側保持裝置20及基座裝置30之方式可升降地設置。於圖4中,利用虛線表示處理杯61。杯驅動部62根據下表面刷51清洗基板W之下表面中之哪個部分來使處理杯61於下杯位置與上杯位置之間移動。下杯位置係處理杯61之上端部位於較由吸附保持部21吸附保持之基板W更靠下方之高度位置。又,上杯位置係處理杯61之上端部位於較吸附保持部21更靠上方之高度位置。The cup device 60 is further provided in the center part of the bottom surface part 2a. The cup device 60 includes a processing cup 61 and a cup driving unit 62 . The processing cup 61 is provided so as to be movable up and down so as to surround the lower holding device 20 and the base device 30 in a plan view. In FIG. 4 , the processing cup 61 is indicated by a broken line. The cup driving unit 62 moves the processing cup 61 between the lower cup position and the upper cup position according to which part of the lower surface of the substrate W is cleaned by the lower surface brush 51 . The lower cup position is a height position where the upper end of the processing cup 61 is positioned below the substrate W that is suction-held by the suction-holding portion 21 . In addition, the upper cup position is a height position higher than the suction holding part 21 at the upper end of the processing cup 61 .

於較處理杯61更靠上方之高度位置,以俯視下隔著基座裝置30而對向之方式設置有一對上側保持裝置10A、10B。上側保持裝置10A包含下夾頭11A、上夾頭12A、下夾頭驅動部13A及上夾頭驅動部14A。上側保持裝置10B包含下夾頭11B、上夾頭12B、下夾頭驅動部13B及上夾頭驅動部14B。A pair of upper holding devices 10A and 10B are provided at a height position higher than the processing cup 61 so as to face each other across the base device 30 in a plan view. The upper holding device 10A includes a lower chuck 11A, an upper chuck 12A, a lower chuck driving portion 13A, and an upper chuck driving portion 14A. The upper holding device 10B includes a lower chuck 11B, an upper chuck 12B, a lower chuck driving portion 13B, and an upper chuck driving portion 14B.

下夾頭11A、11B設為相對於俯視下經過吸附保持部21之中心且沿Y方向(前後方向)延伸之鉛直面對稱地配置,且於共通之水平面內可沿X方向移動。下夾頭11A、11B分別具有能夠自基板W之下方支持基板W之下表面周緣部之2根支持片。下夾頭驅動部13A、13B以下夾頭11A、11B相互接近之方式,或以下夾頭11A、11B相互遠離之方式,使下夾頭11A、11B移動。The lower chucks 11A and 11B are arranged symmetrically with respect to a vertical plane extending in the Y direction (front-rear direction) through the center of the adsorption holding portion 21 in plan view, and are movable in the X direction within a common horizontal plane. The lower chucks 11A and 11B each have two support pieces capable of supporting the peripheral edge portion of the lower surface of the substrate W from below the substrate W. The lower chuck driving parts 13A, 13B move the lower chucks 11A, 11B in such a way that the lower chucks 11A, 11B approach each other, or the lower chucks 11A, 11B move away from each other.

上夾頭12A、12B與下夾頭11A、11B同樣地,設為相對於俯視下經過吸附保持部21之中心且沿Y方向(前後方向)延伸之鉛直面對稱地配置,且於共通之水平面內可沿X方向移動。上夾頭12A、12B分別具有以抵接於基板W之外周端部之2個部分且能夠保持基板W之外周端部之方式構成之2根保持片。上夾頭驅動部14A、14B以上夾頭12A、12B相互接近之方式,或以上夾頭12A、12B相互遠離之方式,使上夾頭12A、12B移動。The upper chucks 12A, 12B, like the lower chucks 11A, 11B, are arranged symmetrically with respect to a vertical plane that passes through the center of the suction holding portion 21 and extends in the Y direction (front-rear direction) in plan view, and are on a common horizontal plane. can move in the X direction. Each of the upper chucks 12A and 12B has two holding pieces configured so as to be in contact with two parts of the outer peripheral end of the substrate W and capable of holding the outer peripheral end of the substrate W. As shown in FIG. The upper chuck driving parts 14A and 14B move the upper chucks 12A and 12B in such a manner that the upper chucks 12A and 12B approach each other, or the upper chucks 12A and 12B move away from each other.

如圖3所示,於處理杯61之一側,以俯視下位於上側保持裝置10B之附近之方式,設置有上表面清洗裝置70。上表面清洗裝置70包含旋轉支持軸71、臂72、噴霧嘴73及上表面清洗驅動部74。As shown in FIG. 3 , an upper surface cleaning device 70 is provided on one side of the processing cup 61 so as to be located in the vicinity of the upper holding device 10B in plan view. The upper surface cleaning device 70 includes a rotation support shaft 71 , an arm 72 , a spray nozzle 73 , and an upper surface cleaning drive unit 74 .

旋轉支持軸71於底面部2a上,以沿上下方向延伸之方式且以能夠升降且能夠旋轉之方式由上表面清洗驅動部74支持。如圖4所示,臂72於較上側保持裝置10B更靠上方之位置,以自旋轉支持軸71之上端部向水平方向延伸之方式設置。於臂72之前端部安裝著噴霧嘴73。The rotation support shaft 71 is supported on the bottom surface portion 2a by the upper surface cleaning drive portion 74 so as to extend in the up-down direction and to be able to ascend and descend and to be rotatable. As shown in FIG. 4 , the arm 72 is provided so as to extend in the horizontal direction from the upper end of the rotation support shaft 71 at a position higher than the upper holding device 10B. A spray nozzle 73 is attached to the front end of the arm 72 .

於噴霧嘴73連接有上表面清洗流體供給部75(圖5)。上表面清洗流體供給部75對噴霧嘴73供給清洗液及氣體。於本實施方式中,使用純水作為供給至噴霧嘴73之清洗液,使用氮氣作為供給至噴霧嘴73之氣體。噴霧嘴73於對基板W之上表面進行清洗時,將自上表面清洗流體供給部75供給之清洗液與氣體混合產生混合流體,並將所產生之混合流體向下方噴射。An upper surface cleaning fluid supply part 75 ( FIG. 5 ) is connected to the spray nozzle 73 . The upper surface cleaning fluid supply unit 75 supplies cleaning liquid and gas to the spray nozzle 73 . In this embodiment, pure water is used as the cleaning liquid supplied to the spray nozzle 73 , and nitrogen gas is used as the gas supplied to the spray nozzle 73 . When cleaning the upper surface of the substrate W, the spray nozzle 73 mixes the cleaning liquid supplied from the upper surface cleaning fluid supply unit 75 with the gas to generate a mixed fluid, and sprays the generated mixed fluid downward.

再者,關於供給至噴霧嘴73之清洗液,亦可代替純水而使用碳酸水、臭氧水、氫水、電解離子水、SC1(氨與過氧化氫水之混合溶液)或TMAH(氫氧化四甲基銨)等。又,關於供給至噴霧嘴73之氣體,亦可代替氮氣而使用氬氣或氦氣等惰性氣體。In addition, as for the cleaning liquid supplied to the spray nozzle 73, carbonated water, ozone water, hydrogen water, electrolytic ionized water, SC1 (a mixed solution of ammonia and hydrogen peroxide water) or TMAH (hydrogen peroxide water) may be used instead of pure water. tetramethylammonium) etc. Moreover, about the gas supplied to the spray nozzle 73, you may use inert gas, such as argon gas and helium gas, instead of nitrogen gas.

上表面清洗驅動部74包含1個或複數個脈衝馬達及氣缸等,使旋轉支持軸71升降,並且使旋轉支持軸71旋轉。根據上述構成,藉由於利用吸附保持部21吸附保持並旋轉之基板W之上表面上,使噴霧嘴73呈圓弧狀移動,能夠清洗基板W之整個上表面。The upper surface cleaning drive unit 74 includes one or a plurality of pulse motors, air cylinders, and the like, moves the rotation support shaft 71 up and down, and rotates the rotation support shaft 71 . According to the above configuration, the entire upper surface of the substrate W can be cleaned by moving the spray nozzle 73 in an arc shape by sucking and holding the rotating upper surface of the substrate W by the suction holding portion 21 .

如圖3所示,於處理杯61之另一側,以俯視下位於上側保持裝置10A之附近之方式,設置有端部清洗裝置80。端部清洗裝置80包含旋轉支持軸81、臂82、斜面刷83及斜面刷驅動部84。As shown in FIG. 3, on the other side of the processing cup 61, the edge part cleaning apparatus 80 is provided so that it may be located in the vicinity of the upper side holding apparatus 10A in plan view. The end cleaning device 80 includes a rotation support shaft 81 , an arm 82 , a bevel brush 83 , and a bevel brush drive unit 84 .

旋轉支持軸81於底面部2a上,以沿上下方向延伸之方式且以能夠升降且能夠旋轉之方式由斜面刷驅動部84支持。如圖4所示,臂82於較上側保持裝置10A更靠上方之位置,以自旋轉支持軸81之上端部向水平方向延伸之方式設置。於臂82之前端部,以朝向下方突出之方式且以能夠圍繞上下方向之軸旋轉之方式設置有斜面刷83。The rotation support shaft 81 is supported on the bottom surface portion 2a by the inclined surface brush driving portion 84 so as to extend in the up-down direction and to be able to ascend and descend and to be rotatable. As shown in FIG. 4 , the arm 82 is provided at a position higher than the upper holding device 10A so as to extend in the horizontal direction from the upper end of the rotation support shaft 81 . On the front end portion of the arm 82, a sloped brush 83 is provided so as to protrude downward and to be rotatable around an axis in the vertical direction.

斜面刷83例如由PVA海綿或分散有研磨粒之PVA海綿形成,上半部具有倒圓錐台形狀並且下半部具有圓錐台形狀。根據該斜面刷83,能夠於外周面之上下方向上之中央部分清洗基板W之外周端部。The inclined surface brush 83 is formed of, for example, a PVA sponge or a PVA sponge in which abrasive particles are dispersed, and the upper half has the shape of an inverted truncated cone and the lower half has the shape of a truncated cone. According to this slant brush 83, the outer peripheral edge part of the board|substrate W can be cleaned in the center part of the upper-lower direction of an outer peripheral surface.

斜面刷驅動部84包含1個或複數個脈衝馬達及氣缸等,使旋轉支持軸81升降,並且使旋轉支持軸81旋轉。根據上述構成,藉由使斜面刷83之外周面之中央部分接觸於由吸附保持部21吸附保持且旋轉之基板W之外周端部,能夠清洗基板W之整個外周端部。The inclined surface brush drive unit 84 includes one or a plurality of pulse motors, air cylinders, and the like, moves the rotation support shaft 81 up and down, and rotates the rotation support shaft 81 . According to the above configuration, the entire outer peripheral end of the substrate W can be cleaned by bringing the central portion of the outer peripheral surface of the bevel brush 83 into contact with the outer peripheral end of the substrate W that is adsorbed and held by the adsorption holding portion 21 and rotated.

此處,斜面刷驅動部84進而包含內置於臂82中之馬達。該馬達使設置於臂82之前端部之斜面刷83圍繞上下方向之軸旋轉。因此,於對基板W之外周端部進行清洗時,藉由使斜面刷83旋轉,而基板W之外周端部中之斜面刷83之清洗力提高。Here, the slant brush drive portion 84 further includes a motor built into the arm 82 . The motor rotates the inclined brush 83 provided at the front end of the arm 82 around an axis in the vertical direction. Therefore, when cleaning the outer peripheral end portion of the substrate W, by rotating the bevel brush 83, the cleaning power of the bevel brush 83 in the outer peripheral end portion of the substrate W increases.

(3)基板處理裝置之控制系統(3) Control system of substrate processing equipment

圖5係表示基板處理裝置100之控制系統之構成之方塊圖。如上所述,圖1之控制裝置170包含CPU、RAM、ROM及記憶裝置。RAM用作CPU之作業區域。ROM記憶系統程式。記憶裝置記憶基板處理程式。FIG. 5 is a block diagram showing the configuration of the control system of the substrate processing apparatus 100 . As mentioned above, the control device 170 of FIG. 1 includes a CPU, a RAM, a ROM, and a memory device. The RAM is used as the working area of the CPU. ROM memory system programs. The memory device stores the substrate processing program.

如圖5所示,控制裝置170包含夾頭控制部171、吸附控制部172、基座控制部173、交接控制部174、下表面清洗控制部175、杯控制部176、上表面清洗控制部177、斜面清洗控制部178、搬入搬出控制部179及搬送控制部180、181作為功能部。藉由CPU於RAM上執行存儲於記憶裝置中之基板處理程式來實現控制裝置170之功能部。控制裝置170之功能部之一部分或全部亦可由電子電路等硬體來實現。As shown in FIG. 5 , the control device 170 includes a chuck control unit 171 , a suction control unit 172 , a base control unit 173 , a delivery control unit 174 , a lower surface cleaning control unit 175 , a cup control unit 176 , and an upper surface cleaning control unit 177 . , the slope cleaning control unit 178 , the carry-in/unload control unit 179 , and the conveyance control units 180 and 181 serve as functional units. The functional part of the control device 170 is realized by the CPU executing the substrate processing program stored in the memory device on the RAM. Part or all of the functional parts of the control device 170 may also be implemented by hardware such as electronic circuits.

夾頭控制部171、吸附控制部172、基座控制部173、交接控制部174、下表面清洗控制部175、杯控制部176、上表面清洗控制部177、斜面清洗控制部178及搬入搬出控制部179對各基板清洗裝置1之動作進行控制。具體而言,夾頭控制部171控制下夾頭驅動部13A、13B及上夾頭驅動部14A、14B,以接收搬入至各基板清洗裝置1之基板W,並將其保持於吸附保持部21之上方之位置。Chuck control unit 171, suction control unit 172, base control unit 173, delivery control unit 174, lower surface cleaning control unit 175, cup control unit 176, upper surface cleaning control unit 177, slope cleaning control unit 178, and loading and unloading control The section 179 controls the operation of each substrate cleaning apparatus 1 . Specifically, the chuck control unit 171 controls the lower chuck driving units 13A and 13B and the upper chuck driving units 14A and 14B to receive the substrates W carried into the respective substrate cleaning apparatuses 1 and hold them in the suction holding unit 21 . position above.

吸附控制部172控制吸附保持驅動部22,以利用吸附保持部21吸附保持基板W並且使被吸附保持之基板W旋轉。基座控制部173控制基座驅動部33,以使可動基座32相對於由上側保持裝置10A、10B保持之基板W移動。交接控制部174控制銷升降驅動部43,以使基板W於由上側保持裝置10A、10B保持之基板W之高度位置、與由吸附保持部21保持之基板W之高度位置之間移動。The suction control unit 172 controls the suction-holding driving unit 22 to suction-hold the substrate W by the suction-holding unit 21 and rotate the suction-holding substrate W. As shown in FIG. The base control unit 173 controls the base drive unit 33 to move the movable base 32 relative to the substrate W held by the upper holding devices 10A and 10B. The delivery control unit 174 controls the pin lift drive unit 43 to move the substrate W between the height position of the substrate W held by the upper holding devices 10A and 10B and the height position of the substrate W held by the suction holding unit 21 .

下表面清洗控制部175控制下表面刷旋轉驅動部55a、下表面刷升降驅動部55b、下表面刷移動驅動部55c、下表面清洗液供給部56及噴出氣體供給部57,以清洗基板W之下表面。杯控制部176控制杯驅動部62,以便於由吸附保持部21吸附保持之基板W之清洗時利用處理杯61接住自基板W飛散之清洗液。The lower surface cleaning control unit 175 controls the lower surface brush rotation drive unit 55a, the lower surface brush lift drive unit 55b, the lower surface brush movement drive unit 55c, the lower surface cleaning liquid supply unit 56, and the ejection gas supply unit 57 to clean the substrate W. lower surface. The cup control unit 176 controls the cup driving unit 62 so that the cleaning liquid scattered from the substrate W is received by the processing cup 61 during cleaning of the substrate W adsorbed and held by the adsorption holding unit 21 .

上表面清洗控制部177控制上表面清洗驅動部74及上表面清洗流體供給部75,以清洗由吸附保持部21吸附保持之基板W之上表面。斜面清洗控制部178控制斜面刷驅動部84,以清洗由吸附保持部21吸附保持之基板W之外周端部。搬入搬出控制部179控制擋板驅動部92,以於各基板清洗裝置1中搬入及搬出基板W時將單元殼體2之搬入搬出口2x打開及關閉。The upper surface cleaning control unit 177 controls the upper surface cleaning driving unit 74 and the upper surface cleaning fluid supply unit 75 to clean the upper surface of the substrate W adsorbed and held by the adsorption holding unit 21 . The bevel cleaning control unit 178 controls the bevel brush driving unit 84 to clean the outer peripheral end of the substrate W that is adsorbed and held by the adsorption holding unit 21 . The loading/unloading control unit 179 controls the shutter drive unit 92 to open and close the loading/unloading outlet 2x of the unit case 2 when loading and unloading the substrates W in and out of the respective substrate cleaning apparatuses 1 .

搬送控制部180控制搬送驅動部220,以於複數個載具C與複數個基板載置部PASS1、PASS2之間搬送基板W。搬送控制部181控制搬送驅動部320,以於複數個基板載置部PASS1、PASS2與複數個基板清洗裝置1之間搬送基板W。The conveyance control unit 180 controls the conveyance drive unit 220 to convey the substrate W between the plurality of carriers C and the plurality of substrate placement units PASS1 and PASS2. The conveyance control unit 181 controls the conveyance drive unit 320 to convey the substrate W between the plurality of substrate placement units PASS1 and PASS2 and the plurality of substrate cleaning apparatuses 1 .

再者,於圖5之例子中,控制裝置170除了控制分度機械手200及主機器人300之動作以外,還控制複數個基板清洗裝置1之動作,但實施方式並不限定於此。各基板清洗裝置1亦可具有用以控制該基板清洗裝置1之動作之控制裝置。於該情形時,控制裝置170亦可不包含夾頭控制部171、吸附控制部172、基座控制部173、交接控制部174、下表面清洗控制部175、杯控制部176、上表面清洗控制部177、斜面清洗控制部178及搬入搬出控制部179。Furthermore, in the example of FIG. 5 , the control device 170 controls the operations of a plurality of substrate cleaning apparatuses 1 in addition to the operations of the indexing robot 200 and the main robot 300 , but the embodiment is not limited to this. Each substrate cleaning apparatus 1 may also have a control device for controlling the operation of the substrate cleaning apparatus 1 . In this case, the control device 170 may not include the chuck control unit 171, the suction control unit 172, the base control unit 173, the delivery control unit 174, the lower surface cleaning control unit 175, the cup control unit 176, and the upper surface cleaning control unit 177 . The slope cleaning control unit 178 and the loading and unloading control unit 179 .

(4)基板清洗裝置之動作(4) Operation of the substrate cleaning device

於複數個基板清洗裝置1中,對利用圖1之主機器人300之機械手Ma~Md分別搬送之複數個基板W依次進行清洗處理。以下,對關於利用機械手Ma搬送之基板W之基板清洗裝置1之動作進行說明,但關於利用機械手Mb~Md搬送之基板W之基板清洗裝置1之動作亦與關於利用機械手Ma搬送之基板W之基板清洗裝置1之動作相同。In the plurality of substrate cleaning apparatuses 1 , the cleaning process is sequentially performed on the plurality of substrates W that are respectively conveyed by the robots Ma to Md of the main robot 300 of FIG. 1 . Hereinafter, the operation of the substrate cleaning apparatus 1 regarding the substrate W conveyed by the robot Ma will be described. The operation of the substrate cleaning apparatus 1 for the substrate W is the same.

圖6~圖17係用以說明圖3之基板清洗裝置1之動作之一例之模式圖。於圖6~圖17之各圖中,上段表示了基板清洗裝置1之俯視圖。又,中段表示了沿Y方向觀察之下側保持裝置20及其周邊部之側視圖,下段表示了沿X方向觀察之下側保持裝置20及其周邊部之側視圖。中段之側視圖與圖3之A-A線側視圖對應,下段之側視圖與圖3之B-B線側視圖對應。再者,為了容易理解基板清洗裝置1中之各構成要素之形狀及動作狀態,而於上段之俯視圖與中段及下段之側視圖之間,一部分構成要素之擴縮率不同。又,於圖6~圖17中,利用二點鏈線表示處理杯61,並且利用粗的單點鏈線表示基板W之外形。6 to 17 are schematic views for explaining an example of the operation of the substrate cleaning apparatus 1 of FIG. 3 . In each of FIGS. 6 to 17 , the upper stage shows a plan view of the substrate cleaning apparatus 1 . In addition, the middle stage shows a side view of the lower holding device 20 and its peripheral portion viewed in the Y direction, and the lower stage shows a side view of the lower holding device 20 and its peripheral portion viewed in the X direction. The side view of the middle section corresponds to the side view of the line A-A in FIG. 3 , and the side view of the lower section corresponds to the side view of the line B-B in FIG. 3 . Furthermore, in order to easily understand the shapes and operating states of the constituent elements in the substrate cleaning apparatus 1, the expansion ratios of some constituent elements are different between the top plan view and the side views of the middle and lower stages. In addition, in FIGS. 6-17, the process cup 61 is shown by the two-dot chain line, and the outer shape of the board|substrate W is shown by the thick single-dot chain line.

於對基板清洗裝置1搬入基板W之前之初始狀態中,開閉裝置90之擋板91將搬入搬出口2x封閉。又,如圖3所示,下夾頭11A、11B維持為下夾頭11A、11B間之距離充分大於基板W之直徑之狀態。又,上夾頭12A、12B亦維持為上夾頭12A、12B間之距離充分大於基板W之直徑。又,基座裝置30之可動基座32以俯視下吸附保持部21之中心位於處理杯61之中心之方式配置。又,於可動基座32上,下表面清洗裝置50配置於接近位置。又,下表面清洗裝置50之升降支持部54處於下表面刷51之清洗面(上端部)位於較吸附保持部21更靠下方之狀態。又,交接裝置40處於複數個支持銷41位於較吸附保持部21高靠下方之狀態。進而,於杯裝置60中,處理杯61處於下杯位置。於以下之說明中,將俯視下之處理杯61之中心位置稱為平面基準位置rp。又,將俯視下吸附保持部21之中心處於平面基準位置rp時之底面部2a上之可動基座32之位置,稱為第1水平位置。In the initial state before the substrate W is loaded into the substrate cleaning apparatus 1, the shutter 91 of the opening and closing device 90 closes the loading and unloading outlet 2x. Furthermore, as shown in FIG. 3 , the lower chucks 11A and 11B are maintained in a state where the distance between the lower chucks 11A and 11B is sufficiently larger than the diameter of the substrate W. As shown in FIG. In addition, the upper chucks 12A and 12B are also maintained so that the distance between the upper chucks 12A and 12B is sufficiently larger than the diameter of the substrate W. As shown in FIG. Moreover, the movable base 32 of the base unit 30 is arranged so that the center of the suction holding part 21 is located at the center of the processing cup 61 in plan view. Moreover, on the movable base 32, the lower surface cleaning apparatus 50 is arrange|positioned in the close position. Moreover, the raising/lowering support part 54 of the lower surface cleaning device 50 is in a state where the cleaning surface (upper end part) of the lower surface brush 51 is positioned further below the suction holding part 21 . In addition, the delivery device 40 is in a state where the plurality of support pins 41 are positioned higher and lower than the suction holding portion 21 . Furthermore, in the cup device 60, the processing cup 61 is in the lower cup position. In the following description, the center position of the processing cup 61 in a plan view is referred to as a plane reference position rp. In addition, the position of the movable base 32 on the bottom surface portion 2a when the center of the suction holding portion 21 is at the plane reference position rp in plan view is referred to as a first horizontal position.

將處理前之基板W搬入基板清洗裝置1之單元殼體2內。具體而言,於即將搬入基板W之前,擋板91打開搬入搬出口2x。然後,如圖6中粗的實線箭頭a1所示,圖1之主機器人300之機械手Ma通過搬入搬出口2x進入至單元殼體2,將基板W交遞至單元殼體2內之大致中央之位置。此時,如圖6所示,利用機械手Ma保持之基板W,位於下夾頭11A及上夾頭12A與下夾頭11B及上夾頭12B之間。The substrate W before processing is carried into the unit casing 2 of the substrate cleaning apparatus 1 . Specifically, just before the substrate W is loaded in, the shutter 91 opens the loading and unloading outlet 2x. Then, as indicated by the thick solid arrow a1 in FIG. 6 , the manipulator Ma of the main robot 300 in FIG. 1 enters into the unit casing 2 through the loading and unloading outlet 2x, and delivers the substrate W into the unit casing 2 approximately central location. At this time, as shown in FIG. 6 , the substrate W held by the robot Ma is located between the lower chuck 11A and the upper chuck 12A and the lower chuck 11B and the upper chuck 12B.

接下來,如圖7中粗的實線箭頭a2所示,下夾頭11A、11B係以下夾頭11A、11B之複數個支持片位於基板W之下表面周緣部之下方之方式相互接近。於該狀態下,機械手Ma下降。藉此,保持於機械手Ma之基板W之下表面周緣部之複數個部分,由下夾頭11A、11B之複數個支持片支持。此時之基板W之位置為搬入位置。於該時間點,於搬出位置,存在前次搬入至單元殼體2且處理結束之基板W。因此,機械手Ma如上所述於搬入位置將基板W交遞至下夾頭11A、11B之後,接收搬出位置之處理後之基板W,自單元殼體2退出。於機械手Ma退出之後,擋板91將搬入搬出口2x封閉。Next, as shown by the thick solid arrow a2 in FIG. In this state, the manipulator Ma descends. Thereby, a plurality of portions of the peripheral edge portion of the lower surface of the substrate W held by the robot Ma are supported by the plurality of support pieces of the lower chucks 11A and 11B. The position of the substrate W at this time is the carry-in position. At this point in time, at the unloading position, there is the substrate W that was previously carried into the unit case 2 and the processing was completed. Therefore, the robot Ma hands over the substrates W to the lower chucks 11A and 11B at the carry-in position as described above, receives the processed substrates W at the carry-out position, and withdraws from the unit casing 2 . After the manipulator Ma is withdrawn, the baffle 91 closes the carry-in and carry-out port 2x.

接下來,如圖8中粗的實線箭頭a3所示,上夾頭12A、12B係以上夾頭12A、12B之複數個保持片抵接於基板W之外周端部之方式相互接近。藉由將上夾頭12A、12B之複數個保持片抵接於基板W之外周端部之複數個部分,而利用上夾頭12A、12B進一步保持由下夾頭11A、11B支持之基板W。如此一來,由上側保持裝置10A、10B保持之基板W之中心,於俯視下與平面基準位置rp重疊或大致重疊。又,如圖8中粗的實線箭頭a4所示,以吸附保持部21自平面基準位置rp偏移規定距離並且下表面刷51之中心位於平面基準位置rp之方式,使可動基座32自第1水平位置向前方移動。此時,將位於底面部2a上之可動基座32之位置,稱為第2水平位置。Next, as shown by the thick solid arrow a3 in FIG. The substrate W supported by the lower chucks 11A and 11B is further held by the upper chucks 12A and 12B by abutting the plurality of holding pieces of the upper chucks 12A and 12B against the plurality of portions of the outer peripheral end of the substrate W. In this way, the center of the substrate W held by the upper holding devices 10A, 10B overlaps or substantially overlaps with the plane reference position rp in plan view. Further, as indicated by the thick solid arrow a4 in FIG. 8 , the movable base 32 is moved from the plane reference position rp so that the suction holding portion 21 is shifted by a predetermined distance from the plane reference position rp and the center of the lower surface brush 51 is positioned at the plane reference position rp. The first horizontal position moves forward. At this time, the position of the movable base 32 on the bottom surface portion 2a is referred to as a second horizontal position.

接下來,如圖9中粗的實線箭頭a5所示,使升降支持部54以下表面刷51之清洗面接觸於基板W之下表面中央區域之方式上升。又,如圖9中粗的實線箭頭a6所示,下表面刷51圍繞上下方向之軸旋轉(自轉)。藉此,附著於基板W之下表面中央區域之污染物質被下表面刷51物理地剝離。Next, as shown by the thick solid line arrow a5 in FIG. Moreover, as shown by the thick solid line arrow a6 in FIG. 9, the lower surface brush 51 rotates (autorotates) about the axis|shaft of an up-down direction. Thereby, the contaminants adhering to the central region of the lower surface of the substrate W are physically peeled off by the lower surface brush 51 .

於圖9之下段,於批註框內表示下表面刷51接觸於基板W之下表面之部分之放大側視圖。如該批註框內所示,於下表面刷51接觸於基板W之狀態下,液體噴嘴52及氣體噴出部53保持於接近基板W之下表面之位置。此時,如中空箭頭a51所示,液體噴嘴52於下表面刷51之附近之位置朝向基板W之下表面噴出清洗液。藉此,自液體噴嘴52供給至基板W之下表面之清洗液被導向下表面刷51與基板W之接觸部,藉此利用下表面刷51自基板W之背面去除之污染物質被清洗液沖洗。如此,於下表面清洗裝置50中,液體噴嘴52與下表面刷51一起安裝於升降支持部54。藉此,能夠高效率地對由下表面刷51清洗之基板W之下表面部分供給清洗液。因此,減少清洗液之消耗量並且抑制清洗液過度飛散。In the lower part of FIG. 9 , an enlarged side view of the portion of the lower surface brush 51 in contact with the lower surface of the substrate W is shown in a comment box. As shown in the comment box, in a state where the lower surface brush 51 is in contact with the substrate W, the liquid nozzle 52 and the gas ejection portion 53 are held at positions close to the lower surface of the substrate W. As shown in FIG. At this time, as indicated by the hollow arrow a51 , the liquid nozzle 52 sprays the cleaning liquid toward the lower surface of the substrate W at a position near the lower surface brush 51 . Thereby, the cleaning liquid supplied from the liquid nozzle 52 to the lower surface of the substrate W is guided to the contact portion of the lower surface brush 51 and the substrate W, whereby the contaminants removed from the back surface of the substrate W by the lower surface brush 51 are washed by the cleaning liquid . In this way, in the lower surface cleaning device 50 , the liquid nozzle 52 is attached to the lift support portion 54 together with the lower surface brush 51 . Thereby, the cleaning liquid can be efficiently supplied to the lower surface portion of the substrate W cleaned by the lower surface brush 51 . Therefore, the consumption of the cleaning liquid is reduced and excessive scattering of the cleaning liquid is suppressed.

再者,清洗基板W之下表面時之下表面刷51之旋轉速度被維持為自液體噴嘴52供給至基板W之下表面之清洗液不會向下表面刷51之側方飛散之程度之速度。Furthermore, when cleaning the lower surface of the substrate W, the rotation speed of the lower surface brush 51 is maintained at a speed such that the cleaning liquid supplied from the liquid nozzle 52 to the lower surface of the substrate W does not scatter to the side of the lower surface brush 51. .

此處,升降支持部54之上表面54u於遠離吸附保持部21之方向朝向斜下方傾斜。於該情形時,於包含污染物質之清洗液自基板W之下表面掉落至升降支持部54上之情形時,由上表面54u接住之清洗液被導向遠離吸附保持部21之方向。Here, the upper surface 54u of the lift support portion 54 is inclined obliquely downward in a direction away from the suction holding portion 21 . In this case, when the cleaning solution containing contaminants falls from the lower surface of the substrate W onto the lift support portion 54 , the cleaning solution caught by the upper surface 54u is directed away from the adsorption holding portion 21 .

又,於利用下表面刷51清洗基板W之下表面時,氣體噴出部53如圖9之批註框內之中空箭頭a52所示,於下表面刷51與吸附保持部21之間之位置朝向基板W之下表面噴射氣體。於本實施方式中,氣體噴出部53以氣體噴射口沿X方向延伸之方式安裝於升降支持部54上。於該情形時,於自氣體噴出部53對基板W之下表面噴射氣體時,於下表面刷51與吸附保持部21之間形成沿X方向延伸之帶狀氣簾。藉此,於利用下表面刷51清洗基板W之下表面時,防止包含污染物質之清洗液朝向吸附保持部21飛散。因此,於利用下表面刷51清洗基板W之下表面時,防止包含污染物質之清洗液附著於吸附保持部21,保持吸附保持部21之吸附面清潔。In addition, when the lower surface of the substrate W is cleaned with the lower surface brush 51, the gas ejection portion 53 faces the substrate at the position between the lower surface brush 51 and the suction holding portion 21 as indicated by the hollow arrow a52 in the comment box in FIG. 9 . The surface under W is sprayed with gas. In this embodiment, the gas ejection portion 53 is mounted on the lift support portion 54 so that the gas ejection port extends in the X direction. In this case, when the gas is ejected from the gas ejection portion 53 to the lower surface of the substrate W, a belt-shaped air curtain extending in the X direction is formed between the lower surface brush 51 and the suction holding portion 21 . Thereby, when the lower surface of the substrate W is cleaned with the lower surface brush 51 , the cleaning liquid containing contaminants is prevented from scattering toward the adsorption holding portion 21 . Therefore, when the lower surface of the substrate W is cleaned with the lower surface brush 51 , the cleaning solution containing contaminants is prevented from adhering to the adsorption holding portion 21 , and the adsorption surface of the adsorption holding portion 21 is kept clean.

再者,於圖9之例子中,氣體噴出部53如中空箭頭a52所示,自氣體噴出部53朝向下表面刷51向斜上方噴射氣體,但實施方式並不限定於此。氣體噴出部53亦可按照自氣體噴出部53朝向基板W之下表面沿Z方向之方式噴射氣體。In addition, in the example of FIG. 9, the gas ejection part 53 ejects gas obliquely upward from the gas ejection part 53 toward the lower surface brush 51 as indicated by the hollow arrow a52, but the embodiment is not limited to this. The gas ejection portion 53 may also eject the gas from the gas ejection portion 53 toward the lower surface of the substrate W along the Z direction.

接下來,於圖9之狀態下,當基板W之下表面中央區域之清洗完成後,停止下表面刷51之旋轉,以下表面刷51之清洗面自基板W離開規定距離之方式使升降支持部54下降。又,停止自液體噴嘴52向基板W噴出清洗液。此時,繼續自氣體噴出部53向基板W噴射氣體。Next, in the state of FIG. 9 , after the cleaning of the central area of the lower surface of the substrate W is completed, the rotation of the lower surface brush 51 is stopped, and the cleaning surface of the lower surface brush 51 is moved away from the substrate W by a predetermined distance. 54 drops. In addition, the discharge of the cleaning liquid from the liquid nozzle 52 to the substrate W is stopped. At this time, the gas is continuously sprayed onto the substrate W from the gas spraying unit 53 .

然後,如圖10中粗的實線箭頭a7所示,以吸附保持部21位於平面基準位置rp之方式,使可動基座32向後方移動。即,可動基座32自第2水平位置向第1水平位置移動。此時,藉由繼續自氣體噴出部53向基板W噴射氣體,而基板W之下表面中央區域被氣簾依次乾燥。Then, as indicated by the thick solid arrow a7 in FIG. 10 , the movable base 32 is moved rearward so that the suction holding portion 21 is positioned at the plane reference position rp. That is, the movable base 32 moves from the second horizontal position to the first horizontal position. At this time, by continuing to spray the gas from the gas spraying part 53 to the substrate W, the central area of the lower surface of the substrate W is sequentially dried by the air curtain.

接下來,如圖11中粗的實線箭頭a8所示,以下表面刷51之清洗面位於較吸附保持部21之吸附面(上端部)更靠下方之方式,使升降支持部54下降。又,如圖11中粗的實線箭頭a9所示,以上夾頭12A、12B之複數個保持片自基板W之外周端部離開之方式,使上夾頭12A、12B相互遠離。此時,成為基板W由下夾頭11A、11B支持之狀態。Next, as shown by the thick solid arrow a8 in FIG. 11 , the lift support portion 54 is lowered so that the cleaning surface of the lower surface brush 51 is positioned below the suction surface (upper end portion) of the suction holding portion 21 . 11, the upper chucks 12A, 12B are separated from each other in such a way that the plurality of holding pieces of the upper chucks 12A, 12B are separated from the outer peripheral end of the substrate W. At this time, the substrate W is supported by the lower chucks 11A and 11B.

然後,如圖11中粗的實線箭頭a10所示,以複數個支持銷41之上端部位於較下夾頭11A、11B稍微靠上方之方式,使銷連結構件42上升。藉此,由下夾頭11A、11B支持之基板W被複數個支持銷41接收。Then, as shown by the thick solid arrow a10 in FIG. 11 , the pin connecting member 42 is raised so that the upper ends of the plurality of support pins 41 are positioned slightly above the lower chucks 11A and 11B. Thereby, the substrate W supported by the lower chucks 11A, 11B is received by the plurality of support pins 41 .

接下來,如圖12中粗的實線箭頭a11所示,下夾頭11A、11B相互遠離。此時,下夾頭11A、11B移動至俯視時不與由複數個支持銷41支持之基板W重疊之位置。藉此,上側保持裝置10A、10B均返回至初始狀態。Next, as shown by the thick solid arrow a11 in FIG. 12 , the lower chucks 11A and 11B are separated from each other. At this time, the lower chucks 11A and 11B are moved to positions where they do not overlap with the substrate W supported by the plurality of support pins 41 in plan view. Thereby, both the upper side holding apparatuses 10A and 10B are returned to the initial state.

接下來,如圖13中粗的實線箭頭a12所示,以複數個支持銷41之上端部位於較吸附保持部21更靠下方之方式,使銷連結構件42下降。藉此,支持於複數個支持銷41上之基板W被吸附保持部21接收。於該狀態下,吸附保持部21吸附保持基板W之下表面中央區域。如此一來,由下側保持裝置20吸附保持之基板W之中心於俯視下與平面基準位置rp重疊或大致重疊。此時之基板W之位置為搬出位置。因此,於本例中,搬出位置處於搬入位置之下方。於銷連結構件42下降之同時或銷連結構件42之下降完成之後,如圖13中粗的實線箭頭a13所示,處理杯61自下杯位置上升至上杯位置。藉此,處於搬出位置之基板W位於較處理杯61之上端部更靠下方。Next, as shown by the thick solid arrow a12 in FIG. 13 , the pin coupling member 42 is lowered so that the upper ends of the plurality of support pins 41 are positioned below the suction holding portion 21 . Thereby, the substrate W supported on the plurality of support pins 41 is received by the suction holding portion 21 . In this state, the suction-holding portion 21 suction-holds the central area of the lower surface of the substrate W by suction. In this way, the center of the substrate W sucked and held by the lower holding device 20 overlaps or substantially overlaps with the plane reference position rp in a plan view. The position of the substrate W at this time is the unloading position. Therefore, in this example, the carry-out position is below the carry-in position. Simultaneously with the lowering of the pin connecting member 42 or after the lowering of the pin connecting member 42 is completed, as indicated by the thick solid arrow a13 in FIG. 13 , the processing cup 61 is raised from the lower cup position to the upper cup position. Thereby, the substrate W in the unloading position is positioned below the upper end of the processing cup 61 .

接下來,如圖14中粗的實線箭頭a14所示,吸附保持部21圍繞上下方向之軸(吸附保持驅動部22之旋轉軸之軸心)旋轉。藉此,被吸附保持部21吸附保持之基板W以水平姿勢旋轉。Next, as shown by the thick solid arrow a14 in FIG. 14 , the suction holding part 21 rotates around the axis of the vertical direction (the axis of the rotation axis of the suction holding driving part 22 ). Thereby, the substrate W sucked and held by the suction holding portion 21 is rotated in a horizontal posture.

接下來,上表面清洗裝置70之旋轉支持軸71旋轉,下降。藉此,如圖14中粗的實線箭頭a15所示,噴霧嘴73移動至基板W之上方之位置,以噴霧嘴73與基板W之間之距離成為預先規定之距離之方式下降。於該狀態下,噴霧嘴73對基板W之上表面噴射清洗液與氣體之混合流體。又,旋轉支持軸71旋轉。藉此,如圖14中粗的實線箭頭a16所示,噴霧嘴73移動至旋轉基板W之上方之位置。藉由對基板W之整個上表面噴射混合流體,來清洗基板W之整個上表面。Next, the rotation support shaft 71 of the upper surface cleaning device 70 rotates and descends. Thereby, as shown by the thick solid arrow a15 in FIG. 14, the spray nozzle 73 moves to the position above the board|substrate W, and descends so that the distance between the spray nozzle 73 and the board|substrate W becomes a predetermined distance. In this state, the spray nozzle 73 sprays the mixed fluid of the cleaning liquid and the gas on the upper surface of the substrate W. As shown in FIG. Moreover, the rotation support shaft 71 rotates. As a result, the spray nozzle 73 is moved to a position above the rotating substrate W as shown by the thick solid arrow a16 in FIG. 14 . The entire upper surface of the substrate W is cleaned by spraying the mixed fluid on the entire upper surface of the substrate W.

又,於利用噴霧嘴73清洗基板W之上表面時,端部清洗裝置80之旋轉支持軸81亦旋轉,下降。藉此,如圖14中粗的實線箭頭a17所示,斜面刷83移動至基板W之外周端部之上方之位置。又,以斜面刷83之外周面之中央部分接觸於基板W之外周端部之方式下降。於該狀態下,斜面刷83圍繞上下方向之軸旋轉(自轉)。藉此,附著於基板W之外周端部之污染物質被斜面刷83物理地剝離。自基板W之外周端部剝離之污染物質被自噴霧嘴73噴射至基板W之混合流體之清洗液沖洗。Moreover, when cleaning the upper surface of the board|substrate W with the spray nozzle 73, the rotation support shaft 81 of the edge part cleaning apparatus 80 also rotates and descends. Thereby, as shown by the thick solid line arrow a17 in FIG. 14, the inclined surface brush 83 moves to the position above the outer peripheral edge part of the board|substrate W. Moreover, it descend|falls so that the center part of the outer peripheral surface of the bevel brush 83 may contact the outer peripheral edge part of the board|substrate W. In this state, the inclined surface brush 83 rotates (rotates) around the axis in the up-down direction. Thereby, the contaminants adhering to the outer peripheral end of the substrate W are physically peeled off by the bevel brush 83 . The contaminants peeled off from the outer peripheral end of the substrate W are washed by the cleaning liquid of the mixed fluid sprayed from the spray nozzle 73 to the substrate W.

進而,於利用噴霧嘴73清洗基板W之上表面時,以下表面刷51之清洗面接觸於基板W之下表面外側區域之方式,使升降支持部54上升。又,如圖14中粗的實線箭頭a18所示,下表面刷51圍繞上下方向之軸旋轉(自轉)。進而,液體噴嘴52朝向基板W之下表面噴出清洗液,氣體噴出部53朝向基板W之下表面噴射氣體。於該狀態下,進而如圖14中粗的實線箭頭a19所示,移動支持部55於可動基座32上於接近位置與離開位置之間進行進退動作。如此,藉由利用移動支持部55於下表面刷51接觸於基板W之下表面之狀態下向水平方向移動,來擴大基板W之下表面中之下表面刷51能夠清洗之範圍。藉此,由吸附保持部21吸附保持且旋轉之基板W之下表面外側區域整體被下表面刷51清洗。Furthermore, when cleaning the upper surface of the substrate W with the spray nozzle 73, the lift support portion 54 is raised so that the cleaning surface of the lower surface brush 51 contacts the outer region of the lower surface of the substrate W. Moreover, as shown by the thick solid line arrow a18 in FIG. 14, the lower surface brush 51 rotates (autorotates) about the axis|shaft of an up-down direction. Furthermore, the liquid nozzle 52 ejects the cleaning liquid toward the lower surface of the substrate W, and the gas ejection portion 53 ejects the gas toward the lower surface of the substrate W. As shown in FIG. In this state, as shown by the thick solid arrow a19 in FIG. 14 , the movement support portion 55 moves forward and backward on the movable base 32 between the approaching position and the separating position. In this way, the lower surface of the substrate W can be cleaned by the lower surface brush 51 by moving the moving support portion 55 in the horizontal direction while the lower surface brush 51 is in contact with the lower surface of the substrate W. As a result, the entire outer region of the lower surface of the substrate W that is adsorbed and held by the adsorption holding portion 21 and rotated is cleaned by the lower surface brush 51 .

接下來,當基板W之上表面、外周端部及下表面外側區域之清洗完成後,停止自噴霧嘴73向基板W噴射混合流體。又,如圖15中粗的實線箭頭a20所示,噴霧嘴73移動至處理杯61之一側之位置(初始狀態之位置)。又,如圖15中粗的實線箭頭a21所示,斜面刷83移動至處理杯61之另一側之位置(初始狀態之位置)。進而,停止下表面刷51之旋轉,以下表面刷51之清洗面自基板W離開規定距離之方式,使升降支持部54下降。又,停止自液體噴嘴52向基板W噴出清洗液、及自氣體噴出部53向基板W噴射氣體。於該狀態下,藉由吸附保持部21高速地旋轉,而附著於基板W之清洗液被甩開,基板W整體進行乾燥。Next, after the cleaning of the upper surface, the outer peripheral end and the outer area of the lower surface of the substrate W is completed, the spraying of the mixed fluid from the spray nozzle 73 to the substrate W is stopped. Moreover, as shown by the thick solid line arrow a20 in FIG. 15, the spray nozzle 73 is moved to the position of one side of the process cup 61 (position of an initial state). Moreover, as shown by the thick solid line arrow a21 in FIG. 15, the slope brush 83 moves to the position on the other side of the process cup 61 (position in an initial state). Further, the rotation of the lower surface brush 51 is stopped, and the lift support portion 54 is lowered so that the cleaning surface of the lower surface brush 51 is separated from the substrate W by a predetermined distance. In addition, the ejection of the cleaning liquid from the liquid nozzle 52 to the substrate W and the ejection of the gas from the gas ejection unit 53 to the substrate W are stopped. In this state, the cleaning liquid adhering to the substrate W is thrown off by the high-speed rotation of the suction holding portion 21, and the entire substrate W is dried.

接下來,如圖16中粗的實線箭頭a22所示,處理杯61自上杯位置下降至下杯位置。藉此,處於搬出位置之基板W位於較處理杯61之上端部更靠上方。又,如圖16中粗的實線箭頭a23所示,使下夾頭11A、11B相互接近直至能夠支持新的基板W之位置為止,以備將新的基板W搬入至單元殼體2內。Next, as shown by the thick solid arrow a22 in FIG. 16 , the processing cup 61 is lowered from the upper cup position to the lower cup position. Thereby, the substrate W in the unloading position is positioned above the upper end of the processing cup 61 . 16 , the lower chucks 11A and 11B are brought close to each other until the new substrate W can be supported, so that the new substrate W can be loaded into the unit case 2 .

最後,自基板清洗裝置1之單元殼體2內搬出基板W。具體而言,於即將搬出基板W之前擋板91打開搬入搬出口2x。於該時間點,於搬入位置不存在基板W。因此,圖1之主機器人300之機械手Ma於保持著下一個處理前之基板W之狀態下,通過搬入搬出口2x進入至單元殼體2內,將處理前之基板W交遞至搬入位置。然後,如圖17中粗的實線箭頭a24所示,機械手Ma接收搬出位置之處理後之基板W,自單元殼體2退出。於機械手Ma退出之後,擋板91將搬入搬出口2x封閉。Finally, the substrate W is unloaded from the unit case 2 of the substrate cleaning apparatus 1 . Specifically, just before the substrate W is unloaded, the shutter 91 opens the loading and unloading port 2x. At this point in time, the board|substrate W does not exist in a carry-in position. Therefore, the manipulator Ma of the main robot 300 of FIG. 1 enters into the unit casing 2 through the carry-in/out port 2x while holding the substrate W before the next process, and delivers the substrate W before the process to the carry-in position . Then, as indicated by the thick solid arrow a24 in FIG. 17 , the robot Ma receives the processed substrate W at the unloading position, and withdraws from the unit casing 2 . After the manipulator Ma is withdrawn, the baffle 91 closes the carry-in and carry-out port 2x.

(5)基板處理(5) Substrate processing

圖18及圖19係表示圖5之控制裝置170進行之基板處理之流程圖。圖18及圖19之基板處理係藉由控制裝置170之CPU於RAM上執行存儲於記憶裝置之基板處理程式來進行。以下,使用圖18及圖19之流程圖對基板處理進行說明。18 and 19 are flowcharts showing substrate processing performed by the control device 170 of FIG. 5 . The substrate processing in FIGS. 18 and 19 is performed by the CPU of the control device 170 executing the substrate processing program stored in the memory device on the RAM. Hereinafter, the substrate processing will be described using the flowcharts of FIGS. 18 and 19 .

再者,於圖18及圖19之流程圖中,主要記載了主機器人300之機械手Ma之動作,但機械手Mb~Md之動作亦與機械手Ma之動作相同。又,於圖18及圖19之流程圖中,省略了分度機械手200之動作之說明。18 and 19 , the operations of the manipulator Ma of the main robot 300 are mainly described, but the operations of the manipulators Mb to Md are also the same as the operations of the manipulator Ma. 18 and 19, the description of the operation of the indexing robot 200 is omitted.

首先,主機器人300將處理前之基板W利用各機械手Ma~Md自基板載置部PASS2搬出(步驟S1)。接下來,主機器人300使機械手Ma進入至對應之基板清洗裝置1之單元殼體2(步驟S2)。First, the main robot 300 unloads the substrate W before processing from the substrate placement portion PASS2 by the robots Ma to Md (step S1 ). Next, the main robot 300 makes the manipulator Ma enter into the unit casing 2 of the corresponding substrate cleaning apparatus 1 (step S2).

然後,主機器人300將於步驟S1中自基板載置部PASS2搬出之處理前之基板W利用機械手Ma交遞至搬入位置(步驟S3)。此時,於搬出位置不存在基板W。因此,主機器人300使機械手Ma自對應之基板清洗裝置1之單元殼體2退出(步驟S4)。又,主機器人300使用機械手Mb~Mc,對所對應之基板清洗裝置1依次執行與步驟S2~S4相同之處理。Then, the main robot 300 delivers the unprocessed substrate W unloaded from the substrate placement portion PASS2 in step S1 to the carry-in position by the robot Ma (step S3 ). At this time, the board|substrate W does not exist in a carry-out position. Therefore, the main robot 300 withdraws the manipulator Ma from the unit casing 2 of the corresponding substrate cleaning apparatus 1 (step S4). The main robot 300 uses the robots Mb to Mc to sequentially execute the same processes as steps S2 to S4 with respect to the corresponding substrate cleaning apparatus 1 .

接下來,各基板清洗裝置1執行圖6~圖17之清洗處理(步驟S5)。又,主機器人300將處理前之基板W利用各機械手Ma~Md自基板載置部PASS2搬出(步驟S6)。步驟S5與步驟S6亦可並列地執行。Next, each substrate cleaning apparatus 1 executes the cleaning process shown in FIGS. 6 to 17 (step S5 ). Moreover, the main robot 300 unloads the substrate W before processing from the substrate placement portion PASS2 by the robots Ma to Md (step S6). Step S5 and step S6 may also be executed in parallel.

於清洗處理結束之後,主機器人300使機械手Ma進入至對應之基板清洗裝置1之單元殼體2(步驟S7)。然後,主機器人300將於步驟S6中自基板載置部PASS2搬出之處理前之基板W利用機械手Ma交遞至搬入位置(步驟S8)。此時,於搬出位置存在步驟S5或下述步驟S11中被清洗處理後之基板W。After the cleaning process is finished, the main robot 300 makes the manipulator Ma enter into the unit housing 2 of the corresponding substrate cleaning apparatus 1 (step S7 ). Then, the main robot 300 delivers the unprocessed substrate W unloaded from the substrate placement portion PASS2 in step S6 to the carry-in position by the robot Ma (step S8 ). At this time, the substrate W that has been cleaned in step S5 or step S11 described below exists in the unloading position.

因此,主機器人300利用機械手Ma自搬出位置接收處理後之基板W(步驟S9)。然後,主機器人300使機械手Ma自對應之基板清洗裝置1之單元殼體2退出(步驟S10)。又,主機器人300使用機械手Mb~Mc,對所對應之基板清洗裝置1依次執行與步驟S7~S10相同之處理。Therefore, the main robot 300 receives the processed substrate W from the unloading position by the robot hand Ma (step S9). Then, the main robot 300 makes the manipulator Ma withdraw from the unit housing 2 of the corresponding substrate cleaning apparatus 1 (step S10). The main robot 300 uses the robots Mb to Mc to sequentially execute the same processes as steps S7 to S10 with respect to the corresponding substrate cleaning apparatus 1 .

接下來,各基板清洗裝置1執行圖6~圖17之清洗處理(步驟S11)。又,主機器人300將於步驟S9中自搬出位置接收之處理後之各基板W利用機械手Ma~Md搬入至基板載置部PASS1(步驟S12)。步驟S11與步驟S12亦可並列地執行。Next, each substrate cleaning apparatus 1 executes the cleaning process shown in FIGS. 6 to 17 (step S11 ). Moreover, the main robot 300 carries out each board|substrate W after the process which received from the carrying-out position in step S9, and carries out to board|substrate mounting part PASS1 by manipulator Ma-Md (step S12). Step S11 and step S12 may also be executed in parallel.

然後,控制裝置170判定是否結束基板處理(步驟S13)。控制裝置170可以於使用者給出結束指令之情形時,判定為結束基板處理。或者,控制裝置170亦可於執行了規定片數之基板W之清洗處理之情形時,判定為結束基板處理。於判定為結束基板處理之情形時,控制裝置170返回至步驟S6。於該情形時,反覆進行步驟S6~S13,直至判定為結束基板處理為止。Then, the control device 170 determines whether or not the substrate processing is terminated (step S13). The control device 170 may determine to end the substrate processing when the user gives an end instruction. Alternatively, the control device 170 may determine that the substrate processing is terminated when the cleaning processing of the predetermined number of substrates W has been performed. When it is determined that the substrate processing is terminated, the control device 170 returns to step S6. In this case, steps S6 to S13 are repeatedly performed until it is determined that the substrate processing is terminated.

於判定為結束基板處理之情形時,主機器人300使機械手Ma進入至對應之基板清洗裝置1之單元殼體2(步驟S14)。此時,於搬出位置,存在步驟S11中經清洗處理後之基板W。因此,主機器人300利用機械手Ma自搬出位置接收處理後之基板W(步驟S15)。然後,主機器人300使機械手Ma自對應之基板清洗裝置1之單元殼體2退出(步驟S16)。又,主機器人300使用機械手Mb~Mc,對所對應之基板清洗裝置1依次執行與步驟S14~S16相同之處理。When it is determined that the substrate processing is terminated, the main robot 300 makes the manipulator Ma enter the unit housing 2 of the corresponding substrate cleaning apparatus 1 (step S14). At this time, at the unloading position, the substrate W after the cleaning process in step S11 exists. Therefore, the main robot 300 receives the processed substrate W from the unloading position by the robot hand Ma (step S15). Then, the main robot 300 makes the manipulator Ma withdraw from the unit housing 2 of the corresponding substrate cleaning apparatus 1 (step S16). In addition, the main robot 300 uses the robots Mb to Mc to sequentially execute the same processes as steps S14 to S16 with respect to the corresponding substrate cleaning apparatus 1 .

最後,主機器人300將於步驟S15中自搬出位置接收之處理後之各基板W利用機械手Ma~Md搬入至基板載置部PASS1(步驟S17)。藉此,結束基板處理。Finally, the main robot 300 carries out the respective substrates W that have been received from the unloading position in step S15 into the substrate placement portion PASS1 by the robots Ma to Md (step S17 ). Thereby, the substrate processing ends.

(6)效果(6) Effect

於本實施方式之基板處理裝置100中,主機器人300之機械手Ma~Md進入至對應之基板清洗裝置1。由各機械手Ma~Md保持之處理前之基板W被交遞至對應之基板清洗裝置1之搬入位置。於將處理前之基板W交遞至搬入位置之後,利用各機械手Ma~Md自對應之基板清洗裝置1之搬出位置接收處理後之基板W。自搬出位置接收處理後之基板W之後,各機械手Ma~Md自對應之基板清洗裝置1退出。利用各基板清洗裝置1對處理前之基板W進行處理。In the substrate processing apparatus 100 of the present embodiment, the robots Ma to Md of the main robot 300 enter the corresponding substrate cleaning apparatus 1 . The pre-processed substrates W held by the robots Ma to Md are handed over to the loading position of the corresponding substrate cleaning apparatus 1 . After the substrate W before processing is delivered to the carry-in position, the processed substrates W are received from the carry-out position of the corresponding substrate cleaning apparatus 1 by the robots Ma to Md. After receiving the processed substrate W from the unloading position, each of the robots Ma to Md is withdrawn from the corresponding substrate cleaning apparatus 1 . The substrate W before processing is processed by each substrate cleaning apparatus 1 .

根據該構成,即便於各基板清洗裝置1存在處理後之基板W之情形時,亦能夠將處理前之基板W搬入至基板清洗裝置1。因此,可於利用機械手Ma~Md將處理前之基板W交遞至所對應之基板清洗裝置1之後,利用同一機械手Ma~Md接收處理後之基板W。因此,無須為了接收處理後之基板W而設置不保持基板W之機械手。又,能夠對複數個基板清洗裝置1連續地進行利用複數個機械手Ma~Md交遞處理前之基板W並且接收處理後之基板W之動作。藉此,可進一步提高產量。According to this configuration, even in the case where the substrate W after processing exists in each substrate cleaning apparatus 1 , the substrate W before processing can be carried into the substrate cleaning apparatus 1 . Therefore, after the substrates W before processing are delivered to the corresponding substrate cleaning apparatus 1 by the robots Ma to Md, the substrates W after processing can be received by the same robots Ma to Md. Therefore, it is not necessary to provide a robot that does not hold the substrate W in order to receive the processed substrate W. In addition, the operation of delivering the substrates W before processing and receiving the substrates W after processing by the plurality of robots Ma to Md can be continuously performed with respect to the plurality of substrate cleaning apparatuses 1 . Thereby, the yield can be further improved.

又,於各基板清洗裝置1中,於搬入至搬入位置之基板W由上側保持裝置10A、10B保持之狀態下,利用下表面清洗裝置50進行下表面中央區域之清洗處理。接下來,利用交接裝置40將基板W進一步交遞至下側保持裝置20。然後,於基板W由下側保持裝置20保持之狀態下,利用下表面清洗裝置50進行下表面外側區域之清洗處理。藉此,能夠高效率地清洗基板W之整個下表面,且將清洗後之基板W自搬出位置搬出。由於搬入位置與搬出位置以於上下方向排列之方式配置,故而能夠減小基板清洗裝置1之設置地面面積(佔據面積)。Moreover, in each substrate cleaning apparatus 1, the lower surface cleaning apparatus 50 performs cleaning processing of the lower surface central area in a state where the substrate W carried into the carrying position is held by the upper holding apparatuses 10A and 10B. Next, the substrate W is further handed over to the lower holding device 20 by the handover device 40 . Then, in a state where the substrate W is held by the lower holding device 20 , the lower surface cleaning device 50 is used to perform cleaning processing of the outer region of the lower surface. Thereby, the entire lower surface of the substrate W can be efficiently cleaned, and the cleaned substrate W can be carried out from the carrying-out position. Since the carrying-in position and the carrying-out position are arranged to be aligned in the vertical direction, the installation floor area (occupied area) of the substrate cleaning apparatus 1 can be reduced.

又,如上所述,由於對1個基板清洗裝置1利用1個機械手進行基板之交遞及接收,故而於因機械手之不良而產生基板W斷裂等搬送不良之情形時,能夠容易地特定出產生了問題之機械手。進而,由於產量提高,故而無須增大主機器人300之搬送速度。藉此,能夠提高搬送之穩定性。In addition, as described above, since a single robot is used to deliver and receive substrates to a single substrate cleaning apparatus 1, it is possible to easily identify a situation in which a transport failure such as a breakage of the substrate W occurs due to a failure of the robot. The robot that caused the problem came out. Furthermore, since the throughput increases, it is not necessary to increase the conveyance speed of the main robot 300 . Thereby, the stability of conveyance can be improved.

(7)其他實施方式(7) Other Embodiments

(a)於上述實施方式中,搬出位置設置於搬入位置之下方,但實施方式並不限定於此。搬出位置亦可設置於搬入位置之上方。例如,亦可於下側保持裝置20之吸附保持部21之中心設置搬入位置,於上側保持裝置10A、10B間設置搬出位置。(a) In the above-mentioned embodiment, the carry-out position is provided below the carry-in position, but the embodiment is not limited to this. The carry-out position may also be provided above the carry-in position. For example, a carry-in position may be provided at the center of the suction holding part 21 of the lower holding device 20, and a carry-out position may be provided between the upper holding devices 10A and 10B.

於該構成中,基板W被交遞至搬入位置,且最先由下側保持裝置20吸附保持,於此狀態下對其下表面中央區域、外周端部及上表面進行清洗。然後,由下側保持裝置20保持之基板W由上側保持裝置10A、10B接收,且保持於搬出位置。於該狀態下對基板W之下表面中央區域進行清洗。清洗後之基板W自上側保持裝置10A、10B被搬出至單元殼體2之外部。In this configuration, the substrate W is delivered to the carry-in position, and is sucked and held by the lower holding device 20 first, and in this state, the lower surface central region, the outer peripheral edge, and the upper surface are cleaned. Then, the substrate W held by the lower holding device 20 is received by the upper holding devices 10A and 10B, and held at the carry-out position. In this state, the central region of the lower surface of the substrate W is cleaned. The cleaned substrate W is carried out of the unit case 2 from the upper holding apparatuses 10A and 10B.

或者,搬入位置與搬出位置亦可不按照於上下方向排列之方式配置。搬入位置與搬出位置例如亦可按照於水平方向排列之方式配置。Alternatively, the carry-in position and the carry-out position may not be arranged so as to be arranged in the vertical direction. The carry-in position and the carry-out position may be arranged, for example, so as to be aligned in the horizontal direction.

(b)於上述實施方式中,交接裝置40為交接部,於上側保持裝置10A、10B與下側保持裝置20之間交接基板W,但實施方式並不限定於此。於上側保持裝置10A、10B及下側保持裝置20中至少一者以能夠升降之方式構成之情形時,亦可不設置交接裝置40。於該情形時,上側保持裝置10A、10B及下側保持裝置20中至少一者為交接部,藉由使該交接部升降,而於上側保持裝置10A、10B與下側保持裝置20之間交接基板W。(b) In the above-described embodiment, the transfer device 40 is a transfer unit that transfers the substrate W between the upper holding devices 10A and 10B and the lower holding device 20 , but the embodiment is not limited to this. When at least one of the upper holding devices 10A, 10B and the lower holding device 20 is configured to be able to rise and fall, the handover device 40 may not be provided. In this case, at least one of the upper holding devices 10A, 10B and the lower holding device 20 is a connecting portion, and by raising and lowering the connecting portion, the connecting between the upper holding devices 10A, 10B and the lower holding device 20 is made. Substrate W.

(c)於上述實施方式中,主機器人300具有4個機械手Ma~Md,但實施方式並不限定於此。主機器人300亦可具有2個、3個或5個以上之機械手。又,較佳為於基板處理裝置100以與主機器人300之機械手對應之方式設置基板清洗裝置1。或者,主機器人300亦可具有1個機械手。於該情形時,亦能相應於機械手之數量而提高產量。(c) In the above-described embodiment, the main robot 300 has four robots Ma to Md, but the embodiment is not limited to this. The main robot 300 may also have 2, 3 or 5 or more manipulators. In addition, it is preferable to install the substrate cleaning apparatus 1 in the substrate processing apparatus 100 so as to correspond to the manipulator of the main robot 300 . Alternatively, the main robot 300 may have one manipulator. In this case, the output can also be increased corresponding to the number of robots.

(d)於上述實施方式中,設置進行清洗處理之基板清洗裝置1作為處理單元,但實施方式並不限定於此。亦可設置進行熱處理之熱處理裝置、進行顯影處理之顯影裝置或進行塗佈處理之塗佈裝置等作為處理單元。又,熱處理裝置亦可構成為能夠對基板執行加熱處理與冷卻處理如此之互不相同之處理。顯影裝置亦可構成為能夠對基板執行正顯影與負顯影這樣的互不相同之處理。(d) In the above-described embodiment, the substrate cleaning apparatus 1 that performs the cleaning process is provided as the processing unit, but the embodiment is not limited to this. A heat treatment device for heat treatment, a development device for development treatment, or a coating device for coating treatment can also be provided as processing units. Moreover, the heat processing apparatus may be comprised so that it may perform mutually different processing, such as a heating processing and a cooling processing, with respect to a board|substrate. The developing device may be configured to be able to perform different processes such as positive development and negative development on the substrate.

(e)於上述實施方式中,對由上側保持裝置10A、10B保持之基板W與由下側保持裝置20保持之基板W進行互不相同之處理,但實施方式並不限定於此。亦可對由上側保持裝置10A、10B保持之基板W與由下側保持裝置20保持之基板W進行相同之處理。或者,亦可不對由上側保持裝置10A、10B保持之基板W或由下側保持裝置20保持之基板W進行處理。(e) In the above-described embodiment, the substrates W held by the upper holding devices 10A and 10B and the substrate W held by the lower holding device 20 are treated differently from each other, but the embodiment is not limited to this. The substrate W held by the upper holding devices 10A, 10B and the substrate W held by the lower holding device 20 can also be subjected to the same treatment. Alternatively, the substrate W held by the upper holding devices 10A and 10B or the substrate W held by the lower holding device 20 may not be processed.

(f)於上述實施方式中,基板處理裝置100包含對基板清洗裝置1及主機器人300等進行控制之控制裝置170,但實施方式並不限定於此。於基板清洗裝置1及主機器人300構成為能夠利用基板處理裝置100之外部之資訊處理裝置來控制之情形時,基板處理裝置100亦可不包含控制裝置170。(f) In the above-described embodiment, the substrate processing apparatus 100 includes the control device 170 that controls the substrate cleaning apparatus 1 , the main robot 300 , and the like, but the embodiment is not limited to this. When the substrate cleaning apparatus 1 and the main robot 300 are configured to be controllable by an information processing apparatus outside the substrate processing apparatus 100 , the substrate processing apparatus 100 may not include the control apparatus 170 .

(8)技術方案之各構成要素與實施方式之各部之對應關係(8) Correspondence between each component of the technical solution and each part of the embodiment

以下,對技術方案之各構成要素與實施方式之各要素之對應例進行說明,但本發明並不限定於下述例子。關於技術方案之各構成要素,亦可使用具有技術方案中所記載之構成或功能之其他各種要素。Hereinafter, the correspondence example of each component of the invention and each element of the embodiment will be described, but the present invention is not limited to the following examples. For each component of the technical solution, other various components having the structure or function described in the technical solution can also be used.

於上述實施方式中,基板W係基板之例子,基板清洗裝置1係處理單元之例子,機械手Ma~Md係搬送保持部之例子,主機器人300係基板搬送部之例子,基板處理裝置100係基板處理裝置之例子。上側保持裝置10A、10B係第1基板保持部之例子,下表面清洗裝置50係第1及第2處理部之例子,下側保持裝置20係第2基板保持部之例子,交接裝置40係交接部之例子。In the above-described embodiment, the substrate W is an example of a substrate, the substrate cleaning apparatus 1 is an example of a processing unit, the robots Ma to Md are an example of a transfer holding unit, the main robot 300 is an example of a substrate transfer unit, and the substrate processing apparatus 100 is an example of a substrate transfer unit. An example of a substrate processing apparatus. The upper holding devices 10A and 10B are examples of the first substrate holding part, the lower surface cleaning device 50 is an example of the first and second processing parts, the lower holding device 20 is an example of the second substrate holding part, and the handover device 40 is the handover device example of the Ministry.

1:基板清洗裝置 2:單元殼體 2a:底面部 2b:側壁部 2c:側壁部 2d:側壁部 2e:側壁部 2x:搬入搬出口 10A:上側保持裝置 10B:上側保持裝置 11A:下夾頭 11B:下夾頭 12A:上夾頭 12B:上夾頭 13A:下夾頭驅動部 13B:下夾頭驅動部 14A:上夾頭驅動部 14B:上夾頭驅動部 20:下側保持裝置 21:吸附保持部 22:吸附保持驅動部 30:基座裝置 31:線性導軌 32:可動基座 33:基座驅動部 40:交接裝置 41:支持銷 42:銷連結構件 43:銷升降驅動部 50:下表面清洗裝置 51:下表面刷 52:液體噴嘴 53:氣體噴出部 54:升降支持部 54u:上表面 55:移動支持部 55a:下表面刷旋轉驅動部 55b:下表面刷升降驅動部 55c:下表面刷移動驅動部 56:下表面清洗液供給部 57:噴出氣體供給部 60:杯裝置 61:處理杯 62:杯驅動部 70:上表面清洗裝置 71:旋轉支持軸 72:臂 73:噴霧嘴 74:上表面清洗驅動部 75:上表面清洗流體供給部 80:端部清洗裝置 81:旋轉支持軸 82:臂 83:斜面刷 84:斜面刷驅動部 90:開閉裝置 91:擋板 92:擋板驅動部 100:基板處理裝置 110:裝載區塊 120:處理區塊 140:載具載置台 150:搬送部 161:清洗部 162:清洗部 163:搬送部 170:控制裝置 171:夾頭控制部 172:吸附控制部 173:基座控制部 174:交接控制部 175:下表面清洗控制部 176:杯控制部 177:上表面清洗控制部 178:斜面清洗控制部 179:搬入搬出控制部 180:搬送控制部 181:搬送控制部 200:分度機械手 210:機械手支持構件 220:搬送驅動部 300:主機器人 310:機械手支持構件 320:搬送驅動部 C:載具 Ia~Id:機械手 Ma~Md:機械手 PASS1:基板載置部 PASS2:基板載置部 rp:平面基準位置 W:基板 1: Substrate cleaning device 2: Unit housing 2a: Bottom face 2b: side wall 2c: Side wall part 2d: side wall 2e: side wall 2x: move in and out 10A: Upper side holding device 10B: Upper side holding device 11A: Lower chuck 11B: Lower collet 12A: Upper chuck 12B: Upper chuck 13A: Lower chuck drive part 13B: Lower chuck drive part 14A: Upper chuck drive part 14B: Upper chuck drive part 20: Lower side holding device 21: Adsorption holding part 22: Adsorption and holding drive part 30: Pedestal unit 31: Linear guide 32: Movable base 33: Base drive part 40: Handover device 41: Support pin 42: Pin connecting member 43: Pin lift drive part 50: Lower surface cleaning device 51: Lower surface brush 52: Liquid Nozzle 53: Gas ejection part 54: Lifting support part 54u: upper surface 55: Mobile Support 55a: Lower surface brush rotation drive part 55b: Lower surface brush lift drive part 55c: Lower surface brush moving drive part 56: Lower surface cleaning liquid supply part 57: Ejection gas supply part 60: Cup Device 61: Processing Cup 62: Cup Drive 70: Upper surface cleaning device 71: Rotation support shaft 72: Arm 73: Spray Nozzle 74: Upper surface cleaning drive part 75: Upper surface cleaning fluid supply part 80: End cleaning device 81: Rotation support shaft 82: Arm 83: Bevel Brush 84: Inclined brush drive part 90: Opening and closing device 91: Baffle 92: Baffle drive part 100: Substrate processing device 110: Load Block 120: Processing blocks 140: Vehicle Mounting Table 150:Conveying Department 161: Cleaning Department 162: Cleaning Department 163: Transfer Department 170: Controls 171: Chuck control part 172: Adsorption control part 173: Base Control Department 174: Handover Control Department 175: Lower surface cleaning control section 176: Cup Control Department 177: Upper surface cleaning control section 178: Slope cleaning control unit 179: Move in and move out control department 180: Conveyance Control Department 181: Conveyance Control Department 200: Indexing manipulator 210: Robot Support Components 220: Conveying drive part 300: Main Robot 310: Robot support component 320: Conveying drive part C: vehicle Ia~Id: Robot Ma~Md: manipulator PASS1: Substrate mounting part PASS2: Substrate mounting part rp: plane reference position W: substrate

圖1係本發明之一實施方式之基板處理裝置之模式性俯視圖。 圖2係圖1之J-J線上之基板處理裝置之模式性剖視圖。 圖3係圖1之基板清洗裝置之模式性俯視圖。 圖4係表示圖3之基板清洗裝置之內部構成之外觀立體圖。 圖5係表示基板處理裝置之控制系統之構成之方塊圖。 圖6係用以說明圖3之基板清洗裝置之動作之一例之模式圖。 圖7係用以說明圖3之基板清洗裝置之動作之一例之模式圖。 圖8係用以說明圖3之基板清洗裝置之動作之一例之模式圖。 圖9係用以說明圖3之基板清洗裝置之動作之一例之模式圖。 圖10係用以說明圖3之基板清洗裝置之動作之一例之模式圖。 圖11係用以說明圖3之基板清洗裝置之動作之一例之模式圖。 圖12係用以說明圖3之基板清洗裝置之動作之一例之模式圖。 圖13係用以說明圖3之基板清洗裝置之動作之一例之模式圖。 圖14係用以說明圖3之基板清洗裝置之動作之一例之模式圖。 圖15係用以說明圖3之基板清洗裝置之動作之一例之模式圖。 圖16係用以說明圖3之基板清洗裝置之動作之一例之模式圖。 圖17係用以說明圖3之基板清洗裝置之動作之一例之模式圖。 圖18係表示圖5之控制裝置所進行之基板處理之流程圖。 圖19係表示圖5之控制裝置所進行之基板處理之流程圖。 FIG. 1 is a schematic plan view of a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of the substrate processing apparatus on line J-J of FIG. 1 . FIG. 3 is a schematic plan view of the substrate cleaning apparatus of FIG. 1 . FIG. 4 is an external perspective view showing the internal structure of the substrate cleaning apparatus of FIG. 3 . FIG. 5 is a block diagram showing the configuration of a control system of the substrate processing apparatus. FIG. 6 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of FIG. 3 . FIG. 7 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of FIG. 3 . FIG. 8 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of FIG. 3 . FIG. 9 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of FIG. 3 . FIG. 10 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of FIG. 3 . FIG. 11 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of FIG. 3 . FIG. 12 is a schematic view for explaining an example of the operation of the substrate cleaning apparatus of FIG. 3 . FIG. 13 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of FIG. 3 . FIG. 14 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of FIG. 3 . FIG. 15 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of FIG. 3 . FIG. 16 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of FIG. 3 . FIG. 17 is a schematic diagram for explaining an example of the operation of the substrate cleaning apparatus of FIG. 3 . FIG. 18 is a flowchart showing the substrate processing performed by the control device of FIG. 5 . FIG. 19 is a flowchart showing the substrate processing performed by the control device of FIG. 5 .

1:基板清洗裝置 1: Substrate cleaning device

100:基板處理裝置 100: Substrate processing device

110:裝載區塊 110: Load Block

120:處理區塊 120: Processing blocks

140:載具載置台 140: Vehicle Mounting Table

150:搬送部 150:Conveying Department

161:清洗部 161: Cleaning Department

162:清洗部 162: Cleaning Department

163:搬送部 163: Transfer Department

200:分度機械手 200: Indexing manipulator

210:機械手支持構件 210: Robot Support Components

220:搬送驅動部 220: Conveying drive part

300:主機器人 300: Main Robot

310:機械手支持構件 310: Robot support component

320:搬送驅動部 320: Conveying drive part

C:載具 C: vehicle

Ia~Id:機械手 Ia~Id: Robot

Ma~Md:機械手 Ma~Md: manipulator

PASS1:基板載置部 PASS1: Substrate mounting part

PASS2:基板載置部 PASS2: Substrate mounting part

W:基板 W: substrate

Claims (7)

一種基板處理裝置,其包含: 處理單元,其具有供搬入處理前之基板之搬入位置、與搬出處理後之基板之搬出位置,並對上述處理前之基板進行處理;及 基板搬送部,其具有搬送保持部,該搬送保持部構成為能夠選擇性地保持上述處理前及處理後之基板;且 上述搬送保持部於保持上述處理前之基板,進入至上述處理單元且將上述處理前之基板交遞至上述搬入位置之後,自上述搬出位置接收上述處理後之基板,於接收上述處理後之基板之後自上述處理單元退出。 A substrate processing device, comprising: A processing unit, which has a carry-in position for carrying in the substrate before processing, and a carry-out position for carrying out the substrate after processing, and processes the above-mentioned substrate before processing; and a substrate transfer unit having a transfer holding unit configured to selectively hold the substrates before and after the processing; and The transfer holding unit holds the substrate before processing, enters the processing unit, and delivers the substrate before processing to the loading position, receives the substrate after processing from the transporting position, and receives the substrate after processing. Then exit from the above processing unit. 如請求項1之基板處理裝置,其中上述搬入位置與上述搬出位置,以於上下方向上排列之方式配置。The substrate processing apparatus according to claim 1, wherein the carrying-in position and the carrying-out position are arranged so as to be aligned in the up-down direction. 如請求項1或2之基板處理裝置,其中上述處理單元設置有複數個, 上述搬送保持部以與複數個處理單元分別對應之方式設置有複數個, 複數個基板搬送部係分別於進入至對應之處理單元將上述處理前之基板交遞至上述搬入位置之後,自上述搬出位置接收上述處理後之基板,於接收上述處理後之基板之後自上述對應之處理單元退出。 The substrate processing apparatus according to claim 1 or 2, wherein the processing unit is provided in plural, A plurality of the above-mentioned conveyance holding parts are provided so as to correspond to the plurality of processing units, respectively, After entering the corresponding processing unit to deliver the substrate before the processing to the loading position, the plurality of substrate transporting units receive the processed substrate from the unloading position, and then transfer the processed substrate from the corresponding processing unit after receiving the processed substrate. The processing unit exits. 如請求項1或2之基板處理裝置,其中上述處理單元包含: 第1基板保持部,其保持搬入至上述搬入位置之基板; 第1處理部,其對由上述第1基板保持部保持之基板進行處理; 第2基板保持部,其保持自上述搬出位置搬入之基板; 交接部,其將由上述第1處理部處理後之基板,自上述第1基板保持部交遞至上述第2基板保持部;及 第2處理部,其對由上述第2基板保持部保持之基板進行處理。 The substrate processing apparatus of claim 1 or 2, wherein the processing unit includes: a first board holding portion for holding the board carried in to the above-mentioned carrying position; a first processing unit for processing the substrate held by the first substrate holding unit; a second board holding portion for holding the board carried in from the above-mentioned carrying-out position; a handover unit, which transfers the substrate processed by the first processing unit from the first substrate holding unit to the second substrate holding unit; and The second processing unit processes the substrate held by the second substrate holding unit. 如請求項4之基板處理裝置,其中上述第1處理部與上述第2處理部對基板進行互不相同之處理。The substrate processing apparatus according to claim 4, wherein the first processing unit and the second processing unit perform different processing on the substrate. 如請求項5之基板處理裝置,其中上述第1處理部進行基板之下表面中央區域之清洗處理, 上述第2處理部進行基板之包圍上述下表面中央區域之下表面外側區域之清洗處理。 The substrate processing apparatus according to claim 5, wherein the first processing unit performs cleaning processing on the central area of the lower surface of the substrate, The said 2nd processing part performs the cleaning process of the lower surface outer side area|region surrounding the said lower surface center area|region of a board|substrate. 一種基板處理方法,其包含如下步驟: 使基板搬送部之搬送保持部進入至處理單元; 將由上述搬送保持部保持之處理前之基板,交遞至上述處理單元之搬入位置; 於將上述處理前之基板交遞至上述搬入位置之後,利用上述搬送保持部自上述處理單元之搬出位置接收處理後之基板; 於自上述搬出位置接收上述處理後之基板之後,使上述搬送保持部自上述處理單元退出;及 利用上述處理單元對上述處理前之基板進行處理。 A substrate processing method, comprising the following steps: Make the conveying and holding part of the substrate conveying part enter into the processing unit; handing over the pre-processed substrate held by the above-mentioned conveying and holding part to the carrying-in position of the above-mentioned processing unit; After the substrate before the processing is delivered to the carrying-in position, the carrying and holding portion is used to receive the processed substrate from the carrying-out position of the processing unit; After receiving the processed substrate from the unloading position, the transfer holding portion is withdrawn from the processing unit; and The substrate before the above-mentioned processing is processed by the above-mentioned processing unit.
TW110134348A 2020-09-18 2021-09-15 Substrate processing apparatus and substrate processing method TWI808489B (en)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
JP2020157270A JP2022051029A (en) 2020-09-18 2020-09-18 Substrate washing device and substrate washing method
JP2020-157268 2020-09-18
JP2020-157267 2020-09-18
JP2020-157270 2020-09-18
JP2020157269A JP2022051028A (en) 2020-09-18 2020-09-18 Substrate processing device and substrate processing method
JP2020-157269 2020-09-18
JP2020157268A JP7477410B2 (en) 2020-09-18 2020-09-18 Substrate Cleaning Equipment
JP2020157267A JP7461842B2 (en) 2020-09-18 2020-09-18 SUBSTRATE CLEANING APPARATUS AND SUBSTRATE PROCESSING APPARATUS
JP2020168777A JP7491805B2 (en) 2020-10-05 2020-10-05 Substrate cleaning apparatus and substrate cleaning method
JP2020-168777 2020-10-05
JP2020-169411 2020-10-06
JP2020169411A JP2022061415A (en) 2020-10-06 2020-10-06 Substrate processing apparatus and substrate processing method

Publications (2)

Publication Number Publication Date
TW202213607A true TW202213607A (en) 2022-04-01
TWI808489B TWI808489B (en) 2023-07-11

Family

ID=80646100

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110134348A TWI808489B (en) 2020-09-18 2021-09-15 Substrate processing apparatus and substrate processing method

Country Status (3)

Country Link
KR (1) KR102579528B1 (en)
CN (1) CN114203587A (en)
TW (1) TWI808489B (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3650495B2 (en) * 1995-12-12 2005-05-18 東京エレクトロン株式会社 Semiconductor processing apparatus, substrate replacement mechanism and substrate replacement method thereof
JP2006100368A (en) * 2004-09-28 2006-04-13 Dainippon Screen Mfg Co Ltd Apparatus and method for substrate treatment
JP5469015B2 (en) * 2009-09-30 2014-04-09 東京エレクトロン株式会社 Substrate processing apparatus and substrate transfer method
JP6503194B2 (en) * 2015-02-16 2019-04-17 株式会社Screenホールディングス Substrate processing equipment
JP6543534B2 (en) * 2015-08-26 2019-07-10 株式会社Screenホールディングス Substrate processing equipment

Also Published As

Publication number Publication date
CN114203587A (en) 2022-03-18
KR20220037989A (en) 2022-03-25
TWI808489B (en) 2023-07-11
KR102579528B1 (en) 2023-09-15

Similar Documents

Publication Publication Date Title
TW202303739A (en) Substrate cleaning device and substrate cleaning method
TWI814077B (en) Substrate cleaning device
JP7461842B2 (en) SUBSTRATE CLEANING APPARATUS AND SUBSTRATE PROCESSING APPARATUS
TW202302231A (en) Substrate cleaning device and substrate cleaning method
TWI808489B (en) Substrate processing apparatus and substrate processing method
TWI819373B (en) Substrate processing apparatus and substrate processing method
TWI808813B (en) Substrate cleaning device, substrate cleaning system, substrate processing system, substrate cleaning method and substrate processing method
JP7477410B2 (en) Substrate Cleaning Equipment
KR102553073B1 (en) Substrate cleaning device and substrate cleaning method
JP7491805B2 (en) Substrate cleaning apparatus and substrate cleaning method
KR102678565B1 (en) Substrate cleaning device and substrate cleaning method
JP2022061415A (en) Substrate processing apparatus and substrate processing method
CN118248585A (en) Substrate processing apparatus and substrate processing method
JP2024094072A (en) SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
JP2024046880A (en) SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
JP2024091093A (en) SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
TW202414564A (en) Substrate processing device and substrate processing method
JP2022189627A (en) Substrate cleaning device and substrate cleaning method
CN115602596A (en) Substrate alignment apparatus, substrate processing apparatus, substrate alignment method, and substrate processing method
CN117642846A (en) Substrate cleaning device
CN115472528A (en) Substrate cleaning device