TW202209935A - Plasma processing device and working method thereof characterized by regulating the flow of the gas on different phase angles of the substrate, thereby regulating the etching conditions on different phase angles of the substrate - Google Patents

Plasma processing device and working method thereof characterized by regulating the flow of the gas on different phase angles of the substrate, thereby regulating the etching conditions on different phase angles of the substrate Download PDF

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TW202209935A
TW202209935A TW110122196A TW110122196A TW202209935A TW 202209935 A TW202209935 A TW 202209935A TW 110122196 A TW110122196 A TW 110122196A TW 110122196 A TW110122196 A TW 110122196A TW 202209935 A TW202209935 A TW 202209935A
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air inlet
gas
plasma processing
air
air intake
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TWI795806B (en
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身健 劉
連增迪
左濤濤
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大陸商中微半導體設備(上海)股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • H01J37/32449Gas control, e.g. control of the gas flow
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

The present invention discloses a plasma processing device, including: a reaction chamber; a first gas inlet member having a first recessed groove disposed therein, wherein the bottom of the first recessed groove is provided with a number of first through holes; a second gas inlet member mounted on the first gas inlet member, wherein a chamber is formed between the first recessed groove and the second gas inlet member, the gas inlet port of the second gas inlet member is used to charge the reaction gas, the gas outlet port of the second gas inlet member is used to discharge the reaction gas and the discharged reaction gas flows into the chamber and further flows into the reaction chamber via the first through holes; and a driving device that can be based on actual needs to change the relative position between the first gas inlet member and the second gas inlet member for changing flow rate of the reaction gas in the first through holes on different phase angles of a substrate to be processed. The present invention can regulate the flow of the gas flowing into the reaction chamber at different phase angles of the substrate to be processed, so that the etching conditions on different phase angles of the substrate to be processed can be regulated.

Description

電漿處理裝置及其工作方法Plasma processing device and its working method

本發明涉及半導體製程設備領域,具體涉及一種電漿處理裝置及其工作方法。The invention relates to the field of semiconductor process equipment, in particular to a plasma processing device and a working method thereof.

現有技術中,電漿處理裝置使用氣體輸送系統輸送氣體到電漿處理裝置的真空反應腔內,透過射頻功率源和線圈產生電漿,從而對待處理基片進行蝕刻。反應氣體通過中間的噴嘴進入反應腔,目前該噴嘴的進氣效果是無法調節的。隨著蝕刻製程的發展,待處理基片在不同相位角上蝕刻的均勻性要求越來越高,具體要求,不同相位角上均勻性的差異可接受範圍為從一開始0.5%~2%到現在小於0.5%。針對這個需求,迫切需要對中間用於進氣的噴嘴進行改進,使接入的反應氣體具有可調節性。In the prior art, a plasma processing apparatus uses a gas delivery system to deliver gas into a vacuum reaction chamber of the plasma processing apparatus, and generates plasma through a radio frequency power source and a coil, so as to etch the substrate to be processed. The reaction gas enters the reaction chamber through the nozzle in the middle, and the air intake effect of this nozzle cannot be adjusted at present. With the development of the etching process, the requirements for the uniformity of the etching of the substrate to be processed at different phase angles are getting higher and higher. For specific requirements, the acceptable range of the uniformity difference at different phase angles is from 0.5%~2% to Now less than 0.5%. In response to this demand, it is urgent to improve the nozzle used for air intake in the middle, so that the reactant gas connected can be adjusted.

本發明的目的在於提供一種電漿處理裝置及其工作方法,以使不同相位角上待處理基片的蝕刻情況可調。The purpose of the present invention is to provide a plasma processing device and a working method thereof, so that the etching conditions of the substrate to be processed at different phase angles can be adjusted.

為了達到上述目的,本發明採用的技術方案如下:In order to achieve the above object, the technical scheme adopted in the present invention is as follows:

一種電漿處理裝置,包括:反應腔;第一進氣件,其具有第一凹槽,第一凹槽底端開設有複數個第一通孔;第二進氣件,安裝於第一進氣件,第一凹槽與第二進氣件之間形成腔體,第二進氣件的進氣口用於接入反應氣體,第二進氣件的出氣口用於流出反應氣體,流出的反應氣體流至腔體內,再經第一通孔流至反應腔內;驅動裝置,用於改變第一進氣件與第二進氣件之間的相對位置,以改變第一通孔的反應氣體流速。A plasma processing device, comprising: a reaction chamber; a first air inlet part, which has a first groove, the bottom end of the first groove is provided with a plurality of first through holes; a second air inlet part is installed in the first air inlet A gas part, a cavity is formed between the first groove and the second air inlet part, the air inlet of the second air inlet part is used to connect the reaction gas, and the air outlet of the second air inlet part is used to flow out the reaction gas, The reaction gas flows into the cavity, and then flows into the reaction cavity through the first through hole; the driving device is used to change the relative position between the first air inlet and the second air inlet to change the first through hole. Reactive gas flow rate.

可選地,第一進氣件安裝在反應腔的頂部開設的開口內。Optionally, the first gas inlet member is installed in an opening opened at the top of the reaction chamber.

可選地,驅動裝置包括至少一組驅動元件,一組驅動元件包括至少一個驅動元件,每組驅動元件可驅動第二進氣件沿著其預設軌跡移動。Optionally, the driving device includes at least one group of driving elements, one group of driving elements includes at least one driving element, and each group of driving elements can drive the second air intake member to move along its preset trajectory.

可選地,第二進氣件包括位於第一進氣件第一凹槽內的插塊和安裝在第一進氣件頂部上方的限位塊,限位塊與插塊固定連接;限位塊形成有第二進氣件的進氣口,插塊形成有第二進氣件的出氣口;插塊的底部與第一進氣件的第一凹槽底端接觸;驅動裝置帶動限位元塊移動,調節插塊與第一通孔之間的相對位置,以改變第一通孔被插塊覆蓋的面積大小來調整從第一通孔輸出氣體的量的多少。Optionally, the second air intake piece includes an insert block located in the first groove of the first air intake piece and a limit block installed above the top of the first air intake piece, and the limit block is fixedly connected to the insert block; The block is formed with an air inlet of the second air inlet, and the plug is formed with an air outlet of the second air inlet; the bottom of the plug is in contact with the bottom end of the first groove of the first air inlet; the driving device drives the limit The element block moves to adjust the relative position between the insert block and the first through hole, so as to change the area of the first through hole covered by the insert block to adjust the amount of gas output from the first through hole.

可選地,限位塊為多棱柱結構。Optionally, the limiting block is a polygonal prism structure.

可選地,第二進氣件的出氣口由插塊的側壁上開設的複數個第二通孔形成。Optionally, the air outlet of the second air intake member is formed by a plurality of second through holes opened on the side wall of the insert block.

可選地,第二進氣件包括安裝在第一進氣件頂部上方的限位塊,限位塊形成有第二進氣件的進氣口和第二進氣件的出氣口;Optionally, the second air intake member includes a limit block installed above the top of the first air intake member, and the limit block is formed with an air inlet of the second air intake member and an air outlet of the second air intake member;

第一進氣件的底部設置有至少一個柱狀封閉件,將第一進氣件的內部分隔形成至少兩個第一凹槽;封閉件的頂部與第二進氣件的限位塊的底部接觸;The bottom of the first air inlet is provided with at least one cylindrical closure, which divides the interior of the first air intake to form at least two first grooves; the top of the closure and the bottom of the limiting block of the second air intake touch;

驅動裝置帶動第二進氣件的限位塊移動,調節限位塊的出氣口與封閉件之間的相對位置,以改變出氣口的面積大小。The driving device drives the limiting block of the second air inlet to move, and adjusts the relative position between the air outlet of the limiting block and the closing element, so as to change the area of the air outlet.

可選地,限位塊的上端設有第二凹槽;當調整第二進氣件的限位塊與第一進氣件之間的相對位置時,第二進氣件的出氣口與至少一個第二凹槽連通。Optionally, the upper end of the limit block is provided with a second groove; when adjusting the relative position between the limit block of the second air inlet and the first air inlet, the air outlet of the second air inlet is at least A second groove communicates.

可選地,第二進氣件上安裝有用於外接反應氣體的連接元件。Optionally, a connecting element for externally connecting the reaction gas is installed on the second gas inlet.

可選地,連接元件與第一進氣件之間安裝有密封件。Optionally, a seal is installed between the connecting element and the first air intake.

另一方面,本發明還提供了一種電漿處理裝置的工作方法,包括:提供如上述電漿處理裝置;提供待處理基片,將其置於電漿處理裝置內底部的基座上;當待處理基片在不同相位角上的蝕刻情況不滿足製程要求,利用驅動裝置改變第一進氣件與第二進氣件之間的相對位置,從而改變不同相位角上第一通孔內反應氣體的流速,以使待處理基片在不同相位角上的蝕刻情況滿足製程要求。On the other hand, the present invention also provides a working method of a plasma processing apparatus, including: providing the above-mentioned plasma processing apparatus; providing a substrate to be processed, and placing it on a base at the bottom of the plasma processing apparatus; The etching conditions of the substrate to be processed at different phase angles do not meet the process requirements, and the relative position between the first air inlet and the second air inlet is changed by the driving device, thereby changing the reaction in the first through hole at different phase angles. The flow rate of the gas, so that the etching conditions of the substrate to be processed at different phase angles meet the process requirements.

與現有技術相比,本發明技術方案至少具有以下優點之一:Compared with the prior art, the technical solution of the present invention has at least one of the following advantages:

本發明提供的電漿處理裝置及其工作方法中,在第二進氣件的進氣口接入反應氣體後,可以根據實際需要利用驅動裝置改變第一進氣件與第二進氣件之間的相對位置來改變待處理基片不同相位角上第一通孔的出氣面積大小,出氣面積小的流量少,出氣面積多的流量多。從而調整進入反應腔內待處理基片不同相位角上氣體的流量,進而使待處理基片不同相位角上的蝕刻情況可調。In the plasma processing device and its working method provided by the present invention, after the reaction gas is connected to the air inlet of the second air inlet, the driving device can be used to change the relationship between the first air inlet and the second air inlet according to actual needs. The relative position between the substrates to be processed changes the size of the air outlet area of the first through hole on the different phase angles of the substrate to be processed. The smaller the air outlet area is, the less the flow rate is, and the larger the air outlet area is, the more the flow rate is. Thereby, the flow rate of the gas entering the reaction chamber at different phase angles of the substrate to be processed is adjusted, so that the etching conditions of the substrate to be processed at different phase angles can be adjusted.

以下結合圖1至圖6和具體實施方式對本發明作進一步詳細說明。根據下面說明,本發明的優點和特徵將更清楚。需要說明的是,圖式採用非常簡化的形式且均使用非精準的比例,僅用以方便、明晰地輔助說明本發明實施方式的目的。為了使本發明的目的、特徵和優點能夠更加明顯易懂,請參閱附圖。須知,本說明書所附圖式所繪示的結構、比例、大小等,均僅用以配合說明書所揭示的內容,以供熟悉此技術的人士瞭解與閱讀,並非用以限定本發明實施的限定條件,故不具技術上的實質意義,任何結構的修飾、比例關係的改變或大小的調整,在不影響本發明所能產生的功效及所能達成的目的下,均應仍落在本發明所揭示的技術內容能涵蓋的範圍內。The present invention will be further described in detail below with reference to FIGS. 1 to 6 and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and all use inaccurate scales, and are only used to assist in explaining the embodiments of the present invention conveniently and clearly. For the purpose, features and advantages of the present invention to be more clearly understood, please refer to the accompanying drawings. It should be noted that the structures, proportions, sizes, etc. shown in the drawings in this specification are only used to cooperate with the contents disclosed in the specification, so as to be understood and read by those who are familiar with the technology, and are not used to limit the implementation of the present invention. Therefore, it does not have technical substantive significance, and any modification of structure, change of proportional relationship or adjustment of size should still fall within the scope of the present invention without affecting the effect that the present invention can produce and the purpose that can be achieved. The scope of the disclosed technical content can be covered.

需要說明的是,在本文中,諸如第一和第二等之類的關係術語僅僅用來將一個實體或者操作與另一個實體或操作區分開來,而不一定要求或者暗示這些實體或操作之間存在任何這種實際的關係或者順序。而且,術語「包括」、「包含」或者其任何其他變體意在涵蓋非排他性的包含,從而使得包括一系列要素的過程、方法、物品或者現場設備不僅包括那些要素,而且還包括沒有明確列出的其他要素,或者是還包括為這種過程、方法、物品或者現場設備所固有的要素。在沒有更多限制的情況下,由語句「包括一個……」限定的要素,並不排除在包括要素的過程、方法、物品或者現場設備中還存在另外的相同要素。It should be noted that, in this document, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any relationship between these entities or operations. any such actual relationship or sequence exists. Moreover, the terms "comprising", "comprising" or any other variation thereof are intended to encompass non-exclusive inclusion such that a process, method, article or field device that includes a list of elements includes not only those elements, but also a non-exclusive list of elements. or other elements that are inherent to such a process, method, article or field device. Without further limitation, an element qualified by the statement "comprises a..." does not preclude the presence of additional identical elements in the process, method, article, or field device that includes the element.

請參閱圖1至圖4所示,本實施例提供的一種電漿處理裝置,尤其是電感耦合型電漿處理裝置,包括:反應腔1,該反應腔1為真空反應腔,在真空反應腔的下游位置設置一基座,基座上設置靜電吸盤2,靜電吸盤2內部設置一靜電電極,用於產生靜電吸力,以實現在製程過程中對待處理基片的支撐固定。電漿中含有大量的電子、離子、激發態的原子、分子和自由基等活性粒子,上述活性粒子可以和待處理基片的表面發生多種物理和化學反應,使得基片表面的形貌發生改變,即完成蝕刻過程。偏置射頻功率源透過射頻匹配網路將偏置射頻電壓施加到基座上,用於控制電漿中帶電粒子的轟擊方向;真空反應腔的下方還設置一排氣泵,用於將反應副產物排出真空反應腔,維持反應腔的真空環境;絕緣視窗3,安裝在反應腔1的頂部;安裝在絕緣視窗3上的線圈4,外接射頻功率源之後產生高頻交變磁場,用於電離接入反應腔內的反應氣體以產生電漿。Referring to FIGS. 1 to 4 , a plasma processing apparatus, especially an inductively coupled plasma processing apparatus, provided in this embodiment includes: a reaction chamber 1 , which is a vacuum reaction chamber, and is located in the vacuum reaction chamber A base is set at the downstream position of the base, an electrostatic chuck 2 is set on the base, and an electrostatic electrode is set inside the electrostatic chuck 2 to generate electrostatic attraction, so as to realize the support and fixation of the substrate to be processed during the process. Plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. The above active particles can undergo various physical and chemical reactions with the surface of the substrate to be treated, which changes the morphology of the substrate surface. , that is, to complete the etching process. The bias radio frequency power source applies the bias radio frequency voltage to the base through the radio frequency matching network to control the bombardment direction of the charged particles in the plasma; an exhaust pump is also arranged under the vacuum reaction chamber for the reaction pair The product is discharged from the vacuum reaction chamber to maintain the vacuum environment of the reaction chamber; the insulating window 3 is installed on the top of the reaction chamber 1; the coil 4 installed on the insulating window 3 is connected to a radio frequency power source to generate a high-frequency alternating magnetic field for ionization. The reaction gas in the reaction chamber is connected to generate plasma.

請參閱圖2所示,本裝置還包括安裝在絕緣視窗3上的一種進氣元件5(附圖1中的D區域),該進氣元件5具體包括:第一進氣件51,其內部具有第一凹槽,第一凹槽底端開設有複數個第一通孔514;第二進氣件52,安裝於第一進氣件51上,第一凹槽與第二進氣件52之間形成有腔體513(第二進氣件52將第一凹槽的上端封閉而形成),第二進氣件52的進氣口用於接入反應氣體,第二進氣件52的出氣口用於流出反應氣體,流出的反應氣體流至腔體513內,並經由第一通孔514流至反應腔1內;驅動裝置,用於改變第一進氣件51與第二進氣件52之間的相對位置,以改變不同相位角上第一通孔514內反應氣體的流速。當第二進氣件52的進氣口接入反應氣體後,可以透過改變第一進氣件51與第二進氣件52之間的相對位置來改變第一通孔514中反應氣體的流速;可以根據待處理基片的蝕刻狀態對反應氣體進行即時調節,以增加蝕刻後的待處理基片在不同相位角上的蝕刻均勻性。Referring to FIG. 2 , the device further includes an air intake element 5 (area D in FIG. 1 ) mounted on the insulating window 3 . The air intake element 5 specifically includes: a first air intake element 51 , which It has a first groove, and the bottom end of the first groove is provided with a plurality of first through holes 514; A cavity 513 is formed therebetween (the second gas inlet member 52 closes the upper end of the first groove), the gas inlet of the second gas inlet member 52 is used to connect the reaction gas, and the second gas inlet member 52 The gas outlet is used to flow out the reaction gas, and the outflowed reaction gas flows into the cavity 513 and flows into the reaction cavity 1 through the first through hole 514; the driving device is used to change the first air inlet 51 and the second air inlet The relative positions between the components 52 can be adjusted to change the flow rate of the reactant gas in the first through hole 514 at different phase angles. After the gas inlet of the second gas inlet member 52 is connected to the reactant gas, the flow rate of the reactant gas in the first through hole 514 can be changed by changing the relative position between the first gas inlet member 51 and the second gas inlet member 52 ; The reactive gas can be adjusted in real time according to the etching state of the substrate to be treated, so as to increase the etching uniformity of the substrate to be treated after etching at different phase angles.

本實施例中,第一進氣件51包括具有第一凹槽的筒狀結構511以及承載於絕緣視窗3上的限位環512,該筒狀結構511安裝在絕緣視窗3上開設的開口內,該限位環512無法通過絕緣視窗3上開設的開口。In this embodiment, the first air intake member 51 includes a cylindrical structure 511 with a first groove and a limiting ring 512 carried on the insulating window 3 , and the cylindrical structure 511 is installed in the opening opened on the insulating window 3 , the limiting ring 512 cannot pass through the opening provided on the insulating window 3 .

請參閱圖3所示,本實施例中的驅動裝置包括兩組驅動元件53,一組驅動元件53包括兩個驅動元件53,相對設置的兩個驅動元件53為一組,每組驅動元件53可驅動第二進氣件52沿著其預設軌跡移動;四個驅動元件53的動力輸出端分別與限位塊522的四個側面相接觸。Referring to FIG. 3 , the driving device in this embodiment includes two groups of driving elements 53 , one group of driving elements 53 includes two driving elements 53 , and the two oppositely arranged driving elements 53 form a group, and each group of driving elements 53 The second air intake member 52 can be driven to move along its preset track; the power output ends of the four driving elements 53 are respectively in contact with the four side surfaces of the limiting block 522 .

本實施例中,請返回參閱圖2所示,第二進氣件52包括嵌入式安裝在第一進氣件51第一凹槽內的插塊521和安裝在第一進氣件51頂部上方的限位塊522,該限位塊522與插塊521連接;插塊521的底部與第一進氣件51的第一凹槽底端接觸,限位塊522形成有第二進氣件52的進氣口,插塊521的側壁形成有第二進氣件52的出氣口;驅動裝置帶動第二進氣件52的限位塊522移動,調節插塊521底部與第一通孔514之間的相對位置,以改變第一通孔514被插塊521底部覆蓋的面積大小來調整從第一通孔514輸出氣體的量的多少,使進入反應腔1內不同相位角上的電漿分佈可調。In this embodiment, please refer back to FIG. 2 , the second air intake member 52 includes an insert block 521 which is embedded in the first groove of the first air intake member 51 and is installed above the top of the first air intake member 51 . The limit block 522 is connected with the insert block 521; the bottom of the insert block 521 is in contact with the bottom end of the first groove of the first air inlet 51, and the limit block 522 is formed with a second air inlet 52 The air outlet of the second air inlet 52 is formed on the side wall of the plug 521; the driving device drives the limit block 522 of the second air inlet 52 to move, and adjusts the distance between the bottom of the plug 521 and the first through hole 514. The relative position between the first through holes 514 and the bottom of the insert block 521 can be changed to adjust the amount of gas output from the first through holes 514, so that the plasma distribution at different phase angles in the reaction chamber 1 can be achieved. Adjustable.

本實施例中,請參閱圖3所示,以限位塊522為正四棱柱結構進行示意性說明,正四棱柱結構在基座上的投影為四邊形,其頂部開設有第二進氣件52的進氣口,插塊521的側壁上開設有複數個第二通孔,形成第二進氣件52的出氣口。In this embodiment, referring to FIG. 3 , the limiting block 522 is a regular quadrangular prism structure for schematic illustration. The projection of the regular quadrangular prism structure on the base is a quadrangle, and the top of the regular quadrangular prism structure is provided with an inlet for the second air intake member 52 . For the air port, a plurality of second through holes are formed on the side wall of the insert block 521 to form the air outlet of the second air inlet member 52 .

限位塊522的形狀不限,也可以為其它形狀,例如:限位元塊522其它多棱柱結構。The shape of the limiting block 522 is not limited, and can also be other shapes, for example, other polygonal prism structures of the limiting element block 522 .

請返回參考圖2,本實施例中,第二進氣件52上還安裝有用於外接反應氣體的連接元件,該連接元件為法蘭54;電漿處理裝置使用氣體輸送系統輸送氣體到電漿處理裝置的反應腔1內,透過射頻功率源和線圈產生電漿,從而對待處理基片進行蝕刻,該連接元件為法蘭54,氣體通過中間的法蘭54進入腔體513,並經由第一通孔514流至反應腔1內。Referring back to FIG. 2 , in this embodiment, a connecting element for external reaction gas is also installed on the second gas inlet member 52 , and the connecting element is a flange 54 ; the plasma processing device uses a gas delivery system to deliver gas to the plasma In the reaction chamber 1 of the processing device, plasma is generated through a radio frequency power source and a coil to etch the substrate to be processed. The connecting element is a flange 54, and the gas enters the chamber 513 through the middle flange 54, and passes through the first flange 54. The through holes 514 flow into the reaction chamber 1 .

本實施例中,連接元件與第一進氣件51之間安裝有密封件,該密封件為環形的密封圈55,也可以為其它密封裝置,且該密封圈55上開設有複數個通孔,驅動機構的動力輸出端貫穿該通孔;一方面,密封圈55可以保證氣體輸送時的氣密性,另一方面,密封圈55可以對驅動機構的動力輸出端起到導向作用,使裝置運行時更加平穩。In this embodiment, a sealing member is installed between the connecting element and the first air intake member 51 . The sealing member is an annular sealing ring 55 or other sealing devices, and the sealing ring 55 is provided with a plurality of through holes. , the power output end of the driving mechanism runs through the through hole; on the one hand, the sealing ring 55 can ensure the air tightness when the gas is conveyed, and on the other hand, the sealing ring 55 can guide the power output end of the driving mechanism, so that the device Runs more smoothly.

第二進氣件52接入反應氣體,反應氣體經由第二進氣件52之後流至第一進氣件51、第二進氣件52之間形成的腔體513內,該腔體513可以容納一定體積的反應氣體,可在啟動時對瞬間增加的氣壓進行緩衝,使蝕刻過程相對平穩。The second gas inlet member 52 is connected to the reactive gas, and the reactive gas flows through the second gas inlet member 52 into the cavity 513 formed between the first gas inlet member 51 and the second gas inlet member 52. The cavity 513 can be It accommodates a certain volume of reactive gas, which can buffer the instantaneously increased air pressure during startup, so that the etching process is relatively stable.

本實施例中,插塊521嵌入式安裝在第一凹槽內,插塊521與筒狀結構511形成一環形的腔體513,在第二進氣件52接入反應氣體的瞬間,第一進氣件51與第二進氣件52之間的壓力增加,上述環形的腔體513可以起到有效的緩衝作用,減小密封圈55的密封壓力,經由該環形的腔體513的反應氣體穿過第一通孔514流至反應腔內,產生用於對待處理基片進行蝕刻的電漿;透過驅動元件53推動限位元塊522,限位塊522帶動插塊521,使插塊521的下端封閉或部分封閉至少一第一通孔514,從而改變第一通孔514的氣體通過狀態,進而實現對反應腔1內待處理基片不同相位角上電漿分佈的可調性以滿足不同的製程要求。In this embodiment, the insert block 521 is embedded in the first groove, and the insert block 521 and the cylindrical structure 511 form an annular cavity 513 . The pressure between the air inlet member 51 and the second air inlet member 52 increases, the annular cavity 513 can play an effective buffering role, reduce the sealing pressure of the sealing ring 55, and the reaction gas passing through the annular cavity 513 The plasma flows into the reaction chamber through the first through hole 514 to generate the plasma used for etching the substrate to be processed; the limiting block 522 is pushed through the driving element 53, and the limiting block 522 drives the inserting block 521 to make the inserting block 521 The lower end of the reaction chamber 1 closes or partially closes at least one first through hole 514, so as to change the gas passing state of the first through hole 514, thereby realizing the adjustability of the plasma distribution on the different phase angles of the substrate to be processed in the reaction chamber 1 to meet the requirements of Different process requirements.

實施例二:Embodiment 2:

請參閱圖5至圖6,絕緣視窗3上安裝有另一種進氣元件6,該進氣元件6包括第一進氣件61和第二進氣件62,第一進氣件61包括具有第一凹槽的筒狀結構611以及承載於絕緣視窗3上的限位環612,該筒狀結構611安裝在絕緣視窗3上開設的開口內,該限位環612無法通過絕緣視窗3上開設的開口,第二進氣件62僅包括安裝在第一進氣件61頂部上方的限位塊622,限位塊622形成有第二進氣件62的進氣口和出氣口;第一進氣件61的底部設置有至少一個柱狀封閉件615,柱狀封閉件615頂部設置複數個第二凹槽616,在此以四個第二凹槽616為例進行說明,第二凹槽616與第二進氣件62的出氣口連通;封閉件615的頂部與限位塊622的底部接觸。Referring to FIGS. 5 to 6 , another air intake element 6 is mounted on the insulating window 3 . The air intake element 6 includes a first air intake member 61 and a second air intake member 62 . A grooved cylindrical structure 611 and a limiting ring 612 carried on the insulating window 3 , the cylindrical structure 611 is installed in the opening opened on the insulating viewing window 3 , and the limiting ring 612 cannot pass through the opening on the insulating viewing window 3 . opening, the second air intake member 62 only includes a limit block 622 installed above the top of the first air intake member 61, and the limit block 622 is formed with an air inlet and an air outlet of the second air intake member 62; the first air intake At least one cylindrical closure member 615 is provided at the bottom of the member 61, and a plurality of second grooves 616 are provided at the top of the cylindrical closure member 615. Here, four second grooves 616 are used as an example for description. The air outlet of the second air intake member 62 is in communication; the top of the closing member 615 is in contact with the bottom of the limiting block 622 .

第二進氣件62上還安裝有用於外接反應氣體的連接元件,該連接元件為法蘭64;電漿處理裝置使用氣體輸送系統輸送氣體到電漿處理裝置的反應腔1內,透過射頻功率源和線圈產生電漿,從而對待處理基片進行蝕刻,該連接元件為法蘭64,氣體通過中間的法蘭64進入腔體613,並經由第一通孔614流至反應腔1內。A connecting element for external reaction gas is also installed on the second air inlet 62. The connecting element is a flange 64; The source and the coil generate plasma to etch the substrate to be processed. The connecting element is the flange 64 . The gas enters the chamber 613 through the middle flange 64 and flows into the reaction chamber 1 through the first through hole 614 .

驅動裝置帶動限位元塊622移動,調節限位塊622的出氣口與封閉件615之間的相對位置,從而調節封閉件615的頂部第二凹槽616被限位塊622覆蓋的面積大小,從而調節進入腔體613內反應氣體量的多少,進而調節反應腔1內反應氣體量的多少以滿足不同的製程需要。The driving device drives the limiting element block 622 to move, and adjusts the relative position between the air outlet of the limiting block 622 and the closing member 615, thereby adjusting the area of the second groove 616 on the top of the closing member 615 covered by the limiting block 622, Thus, the amount of the reaction gas entering the cavity 613 is adjusted, and the amount of the reaction gas in the reaction chamber 1 is adjusted to meet different process requirements.

本實施例中,限位塊622安裝在第一進氣件61的上端,限位塊622與筒狀結構611和封閉件615形成複數個腔體613,在此以四個為例進行示意性說明,請參考圖6,封閉件615的上端設有第二凹槽616;當調整第二進氣件62的限位塊622與第一進氣件61之間的相對位置時,第二進氣件62的出氣口始終與至少一個第二凹槽616連通,在第二進氣件62接入反應氣體的瞬間,第一進氣件61與第二進氣件62之間的壓力增加,上述的四個腔體613可以起到有效的緩衝作用,減小密封圈55的密封壓力,經由上述腔體613的反應氣體穿過第一通孔614流至反應腔內,產生用於對待處理基片進行蝕刻的電漿。In this embodiment, the limiting block 622 is installed on the upper end of the first air intake member 61 , and the limiting block 622 , the cylindrical structure 611 and the closing member 615 form a plurality of cavities 613 , four of which are used as an example for illustration. 6, the upper end of the closing member 615 is provided with a second groove 616; when the relative position between the limiting block 622 of the second air inlet member 62 and the first air inlet member 61 is adjusted, the second inlet The gas outlet of the gas element 62 is always in communication with the at least one second groove 616. When the second gas inlet element 62 is connected to the reaction gas, the pressure between the first gas inlet element 61 and the second gas inlet element 62 increases, The above-mentioned four cavities 613 can play an effective buffering role, reduce the sealing pressure of the sealing ring 55, and the reaction gas passing through the above-mentioned cavities 613 flows into the reaction cavity through the first through hole 614, and generates the gas to be treated. The substrate is etched with plasma.

基於同一發明構思,本實施例1及實施例2還提供了一種電漿處理裝置的工作方法,其中,包括:提供如上述電漿處理裝置;提供一待處理基片,將其置於電漿處理裝置內底部的基座上;當待處理基片在不同相位角上的蝕刻情況不滿足製程要求,利用驅動裝置改變第一進氣件與第二進氣件之間的相對位置,從而改變不同相位角上第一通孔內反應氣體的流速,以使待處理基片在不同相位角上的蝕刻情況滿足製程要求。Based on the same inventive concept, Embodiment 1 and Embodiment 2 also provide a working method of a plasma processing device, which includes: providing the above-mentioned plasma processing device; providing a substrate to be processed, and placing it in the plasma On the base at the bottom of the processing device; when the etching conditions of the substrate to be processed at different phase angles do not meet the process requirements, the driving device is used to change the relative position between the first air inlet and the second air inlet, thereby changing the The flow rate of the reactive gas in the first through hole at different phase angles is used to make the etching conditions of the substrate to be processed at different phase angles meet the process requirements.

儘管本發明的內容已經透過上述優選實施例作了詳細介紹,但應當認識到上述的描述不應被認為是對本發明的限制。在本領域之具備通常知識者閱讀了上述內容後,對於本發明的多種修改和替代都將是顯而易見的。因此,本發明的保護範圍應由所附的申請專利範圍來限定。Although the content of the present invention has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as limiting the present invention. Various modifications and substitutions to the present invention will be apparent to those of ordinary skill in the art upon reading the foregoing disclosure. Therefore, the protection scope of the present invention should be defined by the appended claims.

1:反應腔 2:靜電吸盤 3:絕緣視窗 4:線圈 5:進氣元件 51:第一進氣件 511:筒狀結構 512:限位環 513:腔體 514:第一通孔 52:第二進氣件 521:插塊 522:限位塊 53:驅動元件 54:法蘭 55:密封圈 6:進氣元件 61:第一進氣件 611:筒狀結構 612:限位環 613:腔體 614:第一通孔 615:封閉件 616:第二凹槽 62:第二進氣件 622:限位塊 64:法蘭1: reaction chamber 2: Electrostatic chuck 3: Insulation windows 4: Coil 5: Air intake element 51: The first air intake 511: Tubular structure 512: Limit ring 513: Cavity 514: first through hole 52: Second air intake 521: Insert 522: Limit block 53: Drive components 54: Flange 55: sealing ring 6: Air intake element 61: The first air intake 611: Tubular structure 612: Limit ring 613: Cavity 614: first through hole 615: Closures 616: Second groove 62: Second air intake 622: Limit block 64: Flange

圖1是本發明一種電漿處理裝置的結構示意圖。 圖2至圖4是圖1中一種進氣元件的結構示意圖,圖3是圖2沿A-A線的俯視圖,圖4是圖2沿B-B線的俯視圖。 圖5至圖6是圖1中另一種進氣元件的結構示意圖,圖6是圖5沿C-C線的俯視圖。FIG. 1 is a schematic structural diagram of a plasma processing apparatus of the present invention. 2 to 4 are schematic structural diagrams of an air intake element in FIG. 1 , FIG. 3 is a plan view along the line A-A in FIG. 2 , and FIG. 4 is a plan view along the line B-B in FIG. 2 . 5 to 6 are schematic structural diagrams of another air intake element in FIG. 1 , and FIG. 6 is a top view along the line C-C in FIG. 5 .

1:反應腔1: reaction chamber

2:靜電吸盤2: Electrostatic chuck

3:絕緣視窗3: Insulation windows

4:線圈4: Coil

Claims (11)

一種電漿處理裝置,其中,包括: 一反應腔,其頂部設有一開口; 一第一進氣件,位於該開口內,其具有一第一凹槽,該第一凹槽底端開設有複數個第一通孔; 一第二進氣件,安裝於該第一進氣件上,該第一凹槽與該第二進氣件之間形成一腔體,該第二進氣件的進氣口用於接入一反應氣體,該第二進氣件的出氣口用於流出該反應氣體,流出的該反應氣體流至該腔體內,再經該第一通孔流至該反應腔內; 一驅動裝置,用於改變該第一進氣件與該第二進氣件之間的相對位置,以改變不同相位角上該第一通孔內的該反應氣體的流速。A plasma processing device, comprising: a reaction chamber, the top of which is provided with an opening; a first air intake member, located in the opening, has a first groove, and the bottom end of the first groove is provided with a plurality of first through holes; A second air intake member is installed on the first air intake member, a cavity is formed between the first groove and the second air intake member, and the air inlet of the second air intake member is used for connecting a reaction gas, the gas outlet of the second air inlet is used to flow out the reaction gas, the outflowed reaction gas flows into the cavity, and then flows into the reaction cavity through the first through hole; A driving device is used for changing the relative position between the first gas inlet member and the second gas inlet member, so as to change the flow rate of the reaction gas in the first through hole at different phase angles. 如請求項1所述的電漿處理裝置,其中,該驅動裝置包括至少一驅動元件組,一驅動元件組包括至少一個驅動元件,各該驅動元件組驅動該第二進氣件沿著其預設軌跡移動。The plasma processing device according to claim 1, wherein the driving device comprises at least one driving element group, each driving element group comprises at least one driving element, and each driving element group drives the second air intake member along its Set the track to move. 如請求項1所述的電漿處理裝置,其中,該第二進氣件包括位於該第一進氣件的該第一凹槽內的一插塊和安裝在該第一進氣件頂部上方的一限位塊,該限位塊與該插塊連接;該限位塊形成有該第二進氣件的進氣口,該插塊的側壁形成有該第二進氣件的出氣口;該插塊的底部與該第一進氣件的第一凹槽底端接觸;該驅動裝置帶動該限位元塊移動,調節該插塊與該第一通孔之間的相對位置,以改變該第一通孔被該插塊覆蓋的面積大小來調整從該第一通孔輸出的該反應氣體的量。The plasma processing apparatus of claim 1, wherein the second air inlet member comprises a plug located in the first groove of the first air inlet member and mounted above the top of the first air inlet member A limit block of the plug, the limit block is connected with the insert block; the limit block is formed with the air inlet of the second air inlet, and the side wall of the insert block is formed with the air outlet of the second air inlet; The bottom of the insertion block is in contact with the bottom end of the first groove of the first air intake member; the driving device drives the limiting element block to move, and adjusts the relative position between the insertion block and the first through hole to change The amount of the reactive gas output from the first through hole is adjusted by the area of the first through hole covered by the plug. 如請求項3所述的電漿處理裝置,其中,該限位塊為多棱柱結構。The plasma processing device according to claim 3, wherein the limiting block is a polygonal prism structure. 如請求項3所述的電漿處理裝置,其中,該第二進氣件的出氣口由該插塊的側壁上開設的複數個第二通孔形成。The plasma processing apparatus of claim 3, wherein the air outlet of the second air inlet member is formed by a plurality of second through holes opened on the side wall of the insert block. 如請求項1所述的電漿處理裝置,其中,該第二進氣件包括安裝在第一進氣件頂部上方的一限位塊,該限位塊形成有該第二進氣件的進氣口和該第二進氣件的出氣口; 該第一進氣件的底部設置有至少一個柱狀封閉件,將該第一進氣件的內部分隔形成至少兩個該第一凹槽;該封閉件的頂部與該第二進氣件的該限位塊的底部接觸; 該驅動裝置帶動該第二進氣件的該限位塊移動,調節該限位塊的出氣口與該封閉件之間的相對位置,以改變該出氣口的面積大小,從而改變該第一通孔的該反應氣體的流速。The plasma processing apparatus of claim 1, wherein the second air intake member includes a limiting block mounted above the top of the first air intake member, the limiting block forming the inlet of the second air intake member an air port and an air outlet of the second air inlet; The bottom of the first air inlet is provided with at least one columnar closing member, and the interior of the first air inlet is divided to form at least two first grooves; the top of the closing member and the second air inlet The bottom of the limit block contacts; The driving device drives the limiting block of the second air inlet to move, and adjusts the relative position between the air outlet of the limiting block and the closing element, so as to change the area of the air outlet, thereby changing the first passage The flow rate of the reaction gas through the hole. 如請求項6所述的電漿處理裝置,其中,該限位塊的上端設有複數個第二凹槽;當調整該第二進氣件的該限位塊與該第一進氣件之間的相對位置時,該第二進氣件的出氣口與該第二凹槽連通的面積大小係為可調的。The plasma processing device of claim 6, wherein the upper end of the limiting block is provided with a plurality of second grooves; when adjusting the distance between the limiting block of the second air intake member and the first air intake member When the relative position between the two, the size of the area of the communication between the air outlet of the second air inlet and the second groove is adjustable. 如請求項1所述的電漿處理裝置,其中,該第二進氣件上安裝有用於外接反應氣體的一連接元件。The plasma processing apparatus according to claim 1, wherein a connecting element for external reaction gas is installed on the second gas inlet member. 如請求項8所述的電漿處理裝置,其中,該連接元件與該第一進氣件之間安裝有一密封件。The plasma processing apparatus of claim 8, wherein a sealing member is installed between the connecting element and the first air inlet member. 如請求項1所述的電漿處理裝置,其中,還包括:一基座,位於該反應腔內,與該第一進氣件相對設置。The plasma processing apparatus according to claim 1, further comprising: a base located in the reaction chamber and disposed opposite to the first air inlet member. 一種電漿處理裝置的工作方法,其中,包括: 提供如請求項1至請求項10中的任一項所述的電漿處理裝置; 提供一待處理基片,將其置於電漿處理裝置內底部的基座上; 當該待處理基片在不同相位角上的蝕刻情況不滿足製程要求,利用該驅動裝置改變該第一進氣件與該第二進氣件之間的相對位置,從而改變不同相位角上該第一通孔內反應氣體的流速,以使該待處理基片在不同相位角上的蝕刻情況滿足製程要求。A working method of a plasma processing device, comprising: providing the plasma processing apparatus of any one of claim 1 to claim 10; providing a substrate to be processed, and placing it on the pedestal at the bottom of the plasma processing apparatus; When the etching conditions of the substrate to be processed at different phase angles do not meet the process requirements, the driving device is used to change the relative position between the first air inlet member and the second air inlet member, thereby changing the The flow rate of the reactive gas in the first through hole is used to make the etching conditions of the substrate to be processed at different phase angles meet the process requirements.
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