TW202209935A - Plasma processing device and working method thereof characterized by regulating the flow of the gas on different phase angles of the substrate, thereby regulating the etching conditions on different phase angles of the substrate - Google Patents

Abstract

The present invention discloses a plasma processing device, including: a reaction chamber; a first gas inlet member having a first recessed groove disposed therein, wherein the bottom of the first recessed groove is provided with a number of first through holes; a second gas inlet member mounted on the first gas inlet member, wherein a chamber is formed between the first recessed groove and the second gas inlet member, the gas inlet port of the second gas inlet member is used to charge the reaction gas, the gas outlet port of the second gas inlet member is used to discharge the reaction gas and the discharged reaction gas flows into the chamber and further flows into the reaction chamber via the first through holes; and a driving device that can be based on actual needs to change the relative position between the first gas inlet member and the second gas inlet member for changing flow rate of the reaction gas in the first through holes on different phase angles of a substrate to be processed. The present invention can regulate the flow of the gas flowing into the reaction chamber at different phase angles of the substrate to be processed, so that the etching conditions on different phase angles of the substrate to be processed can be regulated.

Description

Plasma processing device and its working method

The invention relates to the field of semiconductor process equipment, in particular to a plasma processing device and a working method thereof.

In the prior art, a plasma processing apparatus uses a gas delivery system to deliver gas into a vacuum reaction chamber of the plasma processing apparatus, and generates plasma through a radio frequency power source and a coil, so as to etch the substrate to be processed. The reaction gas enters the reaction chamber through the nozzle in the middle, and the air intake effect of this nozzle cannot be adjusted at present. With the development of the etching process, the requirements for the uniformity of the etching of the substrate to be processed at different phase angles are getting higher and higher. For specific requirements, the acceptable range of the uniformity difference at different phase angles is from 0.5%~2% to Now less than 0.5%. In response to this demand, it is urgent to improve the nozzle used for air intake in the middle, so that the reactant gas connected can be adjusted.

The purpose of the present invention is to provide a plasma processing device and a working method thereof, so that the etching conditions of the substrate to be processed at different phase angles can be adjusted.

In order to achieve the above object, the technical scheme adopted in the present invention is as follows:

A plasma processing device, comprising: a reaction chamber; a first air inlet part, which has a first groove, the bottom end of the first groove is provided with a plurality of first through holes; a second air inlet part is installed in the first air inlet A gas part, a cavity is formed between the first groove and the second air inlet part, the air inlet of the second air inlet part is used to connect the reaction gas, and the air outlet of the second air inlet part is used to flow out the reaction gas, The reaction gas flows into the cavity, and then flows into the reaction cavity through the first through hole; the driving device is used to change the relative position between the first air inlet and the second air inlet to change the first through hole. Reactive gas flow rate.

Optionally, the first gas inlet member is installed in an opening opened at the top of the reaction chamber.

Optionally, the driving device includes at least one group of driving elements, one group of driving elements includes at least one driving element, and each group of driving elements can drive the second air intake member to move along its preset trajectory.

Optionally, the second air intake piece includes an insert block located in the first groove of the first air intake piece and a limit block installed above the top of the first air intake piece, and the limit block is fixedly connected to the insert block; The block is formed with an air inlet of the second air inlet, and the plug is formed with an air outlet of the second air inlet; the bottom of the plug is in contact with the bottom end of the first groove of the first air inlet; the driving device drives the limit The element block moves to adjust the relative position between the insert block and the first through hole, so as to change the area of the first through hole covered by the insert block to adjust the amount of gas output from the first through hole.

Optionally, the limiting block is a polygonal prism structure.

Optionally, the air outlet of the second air intake member is formed by a plurality of second through holes opened on the side wall of the insert block.

Optionally, the second air intake member includes a limit block installed above the top of the first air intake member, and the limit block is formed with an air inlet of the second air intake member and an air outlet of the second air intake member;

The bottom of the first air inlet is provided with at least one cylindrical closure, which divides the interior of the first air intake to form at least two first grooves; the top of the closure and the bottom of the limiting block of the second air intake touch;

The driving device drives the limiting block of the second air inlet to move, and adjusts the relative position between the air outlet of the limiting block and the closing element, so as to change the area of the air outlet.

Optionally, the upper end of the limit block is provided with a second groove; when adjusting the relative position between the limit block of the second air inlet and the first air inlet, the air outlet of the second air inlet is at least A second groove communicates.

Optionally, a connecting element for externally connecting the reaction gas is installed on the second gas inlet.

Optionally, a seal is installed between the connecting element and the first air intake.

On the other hand, the present invention also provides a working method of a plasma processing apparatus, including: providing the above-mentioned plasma processing apparatus; providing a substrate to be processed, and placing it on a base at the bottom of the plasma processing apparatus; The etching conditions of the substrate to be processed at different phase angles do not meet the process requirements, and the relative position between the first air inlet and the second air inlet is changed by the driving device, thereby changing the reaction in the first through hole at different phase angles. The flow rate of the gas, so that the etching conditions of the substrate to be processed at different phase angles meet the process requirements.

Compared with the prior art, the technical solution of the present invention has at least one of the following advantages:

In the plasma processing device and its working method provided by the present invention, after the reaction gas is connected to the air inlet of the second air inlet, the driving device can be used to change the relationship between the first air inlet and the second air inlet according to actual needs. The relative position between the substrates to be processed changes the size of the air outlet area of the first through hole on the different phase angles of the substrate to be processed. The smaller the air outlet area is, the less the flow rate is, and the larger the air outlet area is, the more the flow rate is. Thereby, the flow rate of the gas entering the reaction chamber at different phase angles of the substrate to be processed is adjusted, so that the etching conditions of the substrate to be processed at different phase angles can be adjusted.

The present invention will be further described in detail below with reference to FIGS. 1 to 6 and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and all use inaccurate scales, and are only used to assist in explaining the embodiments of the present invention conveniently and clearly. For the purpose, features and advantages of the present invention to be more clearly understood, please refer to the accompanying drawings. It should be noted that the structures, proportions, sizes, etc. shown in the drawings in this specification are only used to cooperate with the contents disclosed in the specification, so as to be understood and read by those who are familiar with the technology, and are not used to limit the implementation of the present invention. Therefore, it does not have technical substantive significance, and any modification of structure, change of proportional relationship or adjustment of size should still fall within the scope of the present invention without affecting the effect that the present invention can produce and the purpose that can be achieved. The scope of the disclosed technical content can be covered.

It should be noted that, in this document, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any relationship between these entities or operations. any such actual relationship or sequence exists. Moreover, the terms "comprising", "comprising" or any other variation thereof are intended to encompass non-exclusive inclusion such that a process, method, article or field device that includes a list of elements includes not only those elements, but also a non-exclusive list of elements. or other elements that are inherent to such a process, method, article or field device. Without further limitation, an element qualified by the statement "comprises a..." does not preclude the presence of additional identical elements in the process, method, article, or field device that includes the element.

Referring to FIGS. 1 to 4 , a plasma processing apparatus, especially an inductively coupled plasma processing apparatus, provided in this embodiment includes: a reaction chamber 1 , which is a vacuum reaction chamber, and is located in the vacuum reaction chamber A base is set at the downstream position of the base, an electrostatic chuck 2 is set on the base, and an electrostatic electrode is set inside the electrostatic chuck 2 to generate electrostatic attraction, so as to realize the support and fixation of the substrate to be processed during the process. Plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. The above active particles can undergo various physical and chemical reactions with the surface of the substrate to be treated, which changes the morphology of the substrate surface. , that is, to complete the etching process. The bias radio frequency power source applies the bias radio frequency voltage to the base through the radio frequency matching network to control the bombardment direction of the charged particles in the plasma; an exhaust pump is also arranged under the vacuum reaction chamber for the reaction pair The product is discharged from the vacuum reaction chamber to maintain the vacuum environment of the reaction chamber; the insulating window 3 is installed on the top of the reaction chamber 1; the coil 4 installed on the insulating window 3 is connected to a radio frequency power source to generate a high-frequency alternating magnetic field for ionization. The reaction gas in the reaction chamber is connected to generate plasma.

Referring to FIG. 2 , the device further includes an air intake element 5 (area D in FIG. 1 ) mounted on the insulating window 3 . The air intake element 5 specifically includes: a first air intake element 51 , which It has a first groove, and the bottom end of the first groove is provided with a plurality of first through holes 514; A cavity 513 is formed therebetween (the second gas inlet member 52 closes the upper end of the first groove), the gas inlet of the second gas inlet member 52 is used to connect the reaction gas, and the second gas inlet member 52 The gas outlet is used to flow out the reaction gas, and the outflowed reaction gas flows into the cavity 513 and flows into the reaction cavity 1 through the first through hole 514; the driving device is used to change the first air inlet 51 and the second air inlet The relative positions between the components 52 can be adjusted to change the flow rate of the reactant gas in the first through hole 514 at different phase angles. After the gas inlet of the second gas inlet member 52 is connected to the reactant gas, the flow rate of the reactant gas in the first through hole 514 can be changed by changing the relative position between the first gas inlet member 51 and the second gas inlet member 52 ; The reactive gas can be adjusted in real time according to the etching state of the substrate to be treated, so as to increase the etching uniformity of the substrate to be treated after etching at different phase angles.

In this embodiment, the first air intake member 51 includes a cylindrical structure 511 with a first groove and a limiting ring 512 carried on the insulating window 3 , and the cylindrical structure 511 is installed in the opening opened on the insulating window 3 , the limiting ring 512 cannot pass through the opening provided on the insulating window 3 .

Referring to FIG. 3 , the driving device in this embodiment includes two groups of driving elements 53 , one group of driving elements 53 includes two driving elements 53 , and the two oppositely arranged driving elements 53 form a group, and each group of driving elements 53 The second air intake member 52 can be driven to move along its preset track; the power output ends of the four driving elements 53 are respectively in contact with the four side surfaces of the limiting block 522 .

In this embodiment, please refer back to FIG. 2 , the second air intake member 52 includes an insert block 521 which is embedded in the first groove of the first air intake member 51 and is installed above the top of the first air intake member 51 . The limit block 522 is connected with the insert block 521; the bottom of the insert block 521 is in contact with the bottom end of the first groove of the first air inlet 51, and the limit block 522 is formed with a second air inlet 52 The air outlet of the second air inlet 52 is formed on the side wall of the plug 521; the driving device drives the limit block 522 of the second air inlet 52 to move, and adjusts the distance between the bottom of the plug 521 and the first through hole 514. The relative position between the first through holes 514 and the bottom of the insert block 521 can be changed to adjust the amount of gas output from the first through holes 514, so that the plasma distribution at different phase angles in the reaction chamber 1 can be achieved. Adjustable.

In this embodiment, referring to FIG. 3 , the limiting block 522 is a regular quadrangular prism structure for schematic illustration. The projection of the regular quadrangular prism structure on the base is a quadrangle, and the top of the regular quadrangular prism structure is provided with an inlet for the second air intake member 52 . For the air port, a plurality of second through holes are formed on the side wall of the insert block 521 to form the air outlet of the second air inlet member 52 .

The shape of the limiting block 522 is not limited, and can also be other shapes, for example, other polygonal prism structures of the limiting element block 522 .

Referring back to FIG. 2 , in this embodiment, a connecting element for external reaction gas is also installed on the second gas inlet member 52 , and the connecting element is a flange 54 ; the plasma processing device uses a gas delivery system to deliver gas to the plasma In the reaction chamber 1 of the processing device, plasma is generated through a radio frequency power source and a coil to etch the substrate to be processed. The connecting element is a flange 54, and the gas enters the chamber 513 through the middle flange 54, and passes through the first flange 54. The through holes 514 flow into the reaction chamber 1 .

In this embodiment, a sealing member is installed between the connecting element and the first air intake member 51 . The sealing member is an annular sealing ring 55 or other sealing devices, and the sealing ring 55 is provided with a plurality of through holes. , the power output end of the driving mechanism runs through the through hole; on the one hand, the sealing ring 55 can ensure the air tightness when the gas is conveyed, and on the other hand, the sealing ring 55 can guide the power output end of the driving mechanism, so that the device Runs more smoothly.

The second gas inlet member 52 is connected to the reactive gas, and the reactive gas flows through the second gas inlet member 52 into the cavity 513 formed between the first gas inlet member 51 and the second gas inlet member 52. The cavity 513 can be It accommodates a certain volume of reactive gas, which can buffer the instantaneously increased air pressure during startup, so that the etching process is relatively stable.

In this embodiment, the insert block 521 is embedded in the first groove, and the insert block 521 and the cylindrical structure 511 form an annular cavity 513 . The pressure between the air inlet member 51 and the second air inlet member 52 increases, the annular cavity 513 can play an effective buffering role, reduce the sealing pressure of the sealing ring 55, and the reaction gas passing through the annular cavity 513 The plasma flows into the reaction chamber through the first through hole 514 to generate the plasma used for etching the substrate to be processed; the limiting block 522 is pushed through the driving element 53, and the limiting block 522 drives the inserting block 521 to make the inserting block 521 The lower end of the reaction chamber 1 closes or partially closes at least one first through hole 514, so as to change the gas passing state of the first through hole 514, thereby realizing the adjustability of the plasma distribution on the different phase angles of the substrate to be processed in the reaction chamber 1 to meet the requirements of Different process requirements.

Embodiment 2:

Referring to FIGS. 5 to 6 , another air intake element 6 is mounted on the insulating window 3 . The air intake element 6 includes a first air intake member 61 and a second air intake member 62 . A grooved cylindrical structure 611 and a limiting ring 612 carried on the insulating window 3 , the cylindrical structure 611 is installed in the opening opened on the insulating viewing window 3 , and the limiting ring 612 cannot pass through the opening on the insulating viewing window 3 . opening, the second air intake member 62 only includes a limit block 622 installed above the top of the first air intake member 61, and the limit block 622 is formed with an air inlet and an air outlet of the second air intake member 62; the first air intake At least one cylindrical closure member 615 is provided at the bottom of the member 61, and a plurality of second grooves 616 are provided at the top of the cylindrical closure member 615. Here, four second grooves 616 are used as an example for description. The air outlet of the second air intake member 62 is in communication; the top of the closing member 615 is in contact with the bottom of the limiting block 622 .

A connecting element for external reaction gas is also installed on the second air inlet 62. The connecting element is a flange 64; The source and the coil generate plasma to etch the substrate to be processed. The connecting element is the flange 64 . The gas enters the chamber 613 through the middle flange 64 and flows into the reaction chamber 1 through the first through hole 614 .

The driving device drives the limiting element block 622 to move, and adjusts the relative position between the air outlet of the limiting block 622 and the closing member 615, thereby adjusting the area of the second groove 616 on the top of the closing member 615 covered by the limiting block 622, Thus, the amount of the reaction gas entering the cavity 613 is adjusted, and the amount of the reaction gas in the reaction chamber 1 is adjusted to meet different process requirements.

In this embodiment, the limiting block 622 is installed on the upper end of the first air intake member 61 , and the limiting block 622 , the cylindrical structure 611 and the closing member 615 form a plurality of cavities 613 , four of which are used as an example for illustration. 6, the upper end of the closing member 615 is provided with a second groove 616; when the relative position between the limiting block 622 of the second air inlet member 62 and the first air inlet member 61 is adjusted, the second inlet The gas outlet of the gas element 62 is always in communication with the at least one second groove 616. When the second gas inlet element 62 is connected to the reaction gas, the pressure between the first gas inlet element 61 and the second gas inlet element 62 increases, The above-mentioned four cavities 613 can play an effective buffering role, reduce the sealing pressure of the sealing ring 55, and the reaction gas passing through the above-mentioned cavities 613 flows into the reaction cavity through the first through hole 614, and generates the gas to be treated. The substrate is etched with plasma.

Based on the same inventive concept, Embodiment 1 and Embodiment 2 also provide a working method of a plasma processing device, which includes: providing the above-mentioned plasma processing device; providing a substrate to be processed, and placing it in the plasma On the base at the bottom of the processing device; when the etching conditions of the substrate to be processed at different phase angles do not meet the process requirements, the driving device is used to change the relative position between the first air inlet and the second air inlet, thereby changing the The flow rate of the reactive gas in the first through hole at different phase angles is used to make the etching conditions of the substrate to be processed at different phase angles meet the process requirements.

Although the content of the present invention has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as limiting the present invention. Various modifications and substitutions to the present invention will be apparent to those of ordinary skill in the art upon reading the foregoing disclosure. Therefore, the protection scope of the present invention should be defined by the appended claims.

1: reaction chamber 2: Electrostatic chuck 3: Insulation windows 4: Coil 5: Air intake element 51: The first air intake 511: Tubular structure 512: Limit ring 513: Cavity 514: first through hole 52: Second air intake 521: Insert 522: Limit block 53: Drive components 54: Flange 55: sealing ring 6: Air intake element 61: The first air intake 611: Tubular structure 612: Limit ring 613: Cavity 614: first through hole 615: Closures 616: Second groove 62: Second air intake 622: Limit block 64: Flange

FIG. 1 is a schematic structural diagram of a plasma processing apparatus of the present invention. 2 to 4 are schematic structural diagrams of an air intake element in FIG. 1 , FIG. 3 is a plan view along the line A-A in FIG. 2 , and FIG. 4 is a plan view along the line B-B in FIG. 2 . 5 to 6 are schematic structural diagrams of another air intake element in FIG. 1 , and FIG. 6 is a top view along the line C-C in FIG. 5 .

1: reaction chamber

2: Electrostatic chuck

3: Insulation windows

4: Coil

Claims (11)

A plasma processing device, comprising: a reaction chamber, the top of which is provided with an opening; a first air intake member, located in the opening, has a first groove, and the bottom end of the first groove is provided with a plurality of first through holes; A second air intake member is installed on the first air intake member, a cavity is formed between the first groove and the second air intake member, and the air inlet of the second air intake member is used for connecting a reaction gas, the gas outlet of the second air inlet is used to flow out the reaction gas, the outflowed reaction gas flows into the cavity, and then flows into the reaction cavity through the first through hole; A driving device is used for changing the relative position between the first gas inlet member and the second gas inlet member, so as to change the flow rate of the reaction gas in the first through hole at different phase angles. The plasma processing device according to claim 1, wherein the driving device comprises at least one driving element group, each driving element group comprises at least one driving element, and each driving element group drives the second air intake member along its Set the track to move. The plasma processing apparatus of claim 1, wherein the second air inlet member comprises a plug located in the first groove of the first air inlet member and mounted above the top of the first air inlet member A limit block of the plug, the limit block is connected with the insert block; the limit block is formed with the air inlet of the second air inlet, and the side wall of the insert block is formed with the air outlet of the second air inlet; The bottom of the insertion block is in contact with the bottom end of the first groove of the first air intake member; the driving device drives the limiting element block to move, and adjusts the relative position between the insertion block and the first through hole to change The amount of the reactive gas output from the first through hole is adjusted by the area of the first through hole covered by the plug. The plasma processing device according to claim 3, wherein the limiting block is a polygonal prism structure. The plasma processing apparatus of claim 3, wherein the air outlet of the second air inlet member is formed by a plurality of second through holes opened on the side wall of the insert block. The plasma processing apparatus of claim 1, wherein the second air intake member includes a limiting block mounted above the top of the first air intake member, the limiting block forming the inlet of the second air intake member an air port and an air outlet of the second air inlet; The bottom of the first air inlet is provided with at least one columnar closing member, and the interior of the first air inlet is divided to form at least two first grooves; the top of the closing member and the second air inlet The bottom of the limit block contacts; The driving device drives the limiting block of the second air inlet to move, and adjusts the relative position between the air outlet of the limiting block and the closing element, so as to change the area of the air outlet, thereby changing the first passage The flow rate of the reaction gas through the hole. The plasma processing device of claim 6, wherein the upper end of the limiting block is provided with a plurality of second grooves; when adjusting the distance between the limiting block of the second air intake member and the first air intake member When the relative position between the two, the size of the area of the communication between the air outlet of the second air inlet and the second groove is adjustable. The plasma processing apparatus according to claim 1, wherein a connecting element for external reaction gas is installed on the second gas inlet member. The plasma processing apparatus of claim 8, wherein a sealing member is installed between the connecting element and the first air inlet member. The plasma processing apparatus according to claim 1, further comprising: a base located in the reaction chamber and disposed opposite to the first air inlet member. A working method of a plasma processing device, comprising: providing the plasma processing apparatus of any one of claim 1 to claim 10; providing a substrate to be processed, and placing it on the pedestal at the bottom of the plasma processing apparatus; When the etching conditions of the substrate to be processed at different phase angles do not meet the process requirements, the driving device is used to change the relative position between the first air inlet member and the second air inlet member, thereby changing the The flow rate of the reactive gas in the first through hole is used to make the etching conditions of the substrate to be processed at different phase angles meet the process requirements.

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