TW202205584A - Multimetal klettwelding - Google Patents

Multimetal klettwelding Download PDF

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Publication number
TW202205584A
TW202205584A TW110108368A TW110108368A TW202205584A TW 202205584 A TW202205584 A TW 202205584A TW 110108368 A TW110108368 A TW 110108368A TW 110108368 A TW110108368 A TW 110108368A TW 202205584 A TW202205584 A TW 202205584A
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Taiwan
Prior art keywords
connection
connecting element
nanowires
region
area
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TW110108368A
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Chinese (zh)
Inventor
奧拉夫 貝勒姆
弗洛里安 達辛格
塞巴斯蒂安 奎德瑙
法魯 魯斯塔
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德商耐諾維爾德股份有限公司
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Publication of TW202205584A publication Critical patent/TW202205584A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
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    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
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Abstract

Method for connecting a first component to a second component, comprising: a) providing a connecting element with a respective multiplicity of nanowires on a first connecting area on a first side of the connecting element and on a second connecting area on a second side, opposite the first side, of the connecting element, wherein the nanowires on the first connecting area and the nanowires on the second connecting area are formed from different materials, b) bringing a contact area of the first component and the first connecting area of the connecting element together, and c) bringing a contact area of the second component and the second connecting area of the connecting element together.

Description

多金屬克萊特熔接技術Polymetallic Clay Welding Technology

發明領域Field of Invention

本發明係關於一種用以將第一構件連接至第二構件的方法及連接元件；及亦關於一種二個連接在一起的構件之配置，特別關於來自電子設備的構件。The present invention relates to a method and connecting element for connecting a first member to a second member; and also to an arrangement of two connected together members, particularly from electronic equipment.

發明背景Background of the Invention

在廣泛多種應用中，有需要將主體彼此連接。以實施例說明之，可需要將二個金屬主體或二個由不同材料製得的主體彼此連接。此特別係在電子設備的情況中。為了形成此種類的連接，已自先述技藝中知曉廣泛多種方法。特別知曉之連接例如電導體或由銅製得的主體之方法有熔接、硬或軟焊、黏接、螺鎖、鉚接或壓紋。在此種類之方法中，所製備的表面係相關於彼此經精確地定向及彼此連接。因此，欲連接的主體必需在其縱向程度及其連接位置上有明確的幾何定義及製備。再者，必需預先進行為了製造該連接之準備，諸如例如，鑽孔或供應相應的連接元件。於此，黏接、螺鎖及鉚接連接技術係室溫方法。相較之下，熔接、軟焊及硬焊係熱方法，此將產生液態金屬並將其以體積填入及金屬交互作用之方式嵌入該接合點中。In a wide variety of applications, there is a need to connect bodies to each other. By way of example, it may be desirable to connect two metal bodies or two bodies made of different materials to each other. This is particularly the case in electronic equipment. To form this type of connection, a wide variety of methods are known from the prior art. Particularly known methods of joining, for example, electrical conductors or bodies made of copper are welding, hard or soldering, gluing, screwing, riveting or embossing. In this type of method, the prepared surfaces are precisely oriented with respect to each other and connected to each other. Therefore, the bodies to be connected must have a well-defined geometrical definition and preparation in their longitudinal extent and their connection locations. Furthermore, preparations for making the connection must be made in advance, such as, for example, drilling holes or supplying corresponding connection elements. Here, bonding, screw locking and riveting connection techniques are room temperature methods. In contrast, welding, soldering, and brazing are thermal methods that produce liquid metal and embed it in the junction by volume filling and metal interaction.

由於熔接時常有最高1400 ℃的相當高溫輸入，其具有下列缺點，一方面，所討論的主體會被加熱至相當高的程度，如此會有觸發可燃材料發火之風險。亦可發生欲連接的主體之表面有光學改變，此特別在經漆、膜或塗層預處理的表面之情況中可係問題。許多材料亦無法熔接。Since welding often has a relatively high temperature input of up to 1400° C., it has the following disadvantages. On the one hand, the body in question is heated to a relatively high degree, so that there is a risk of triggering the ignition of the combustible material. Optical alterations of the surfaces of the bodies to be joined can also occur, which can be problematic in particular in the case of surfaces pretreated with paints, films or coatings. Many materials also cannot be welded.

例如，銅之硬焊可由於其相當大的熱能輸入，同樣地具有包含於該連接中的構件會被相當大地加熱(特別是，高於400 ℃)之結果。此可導致可燃材料燃燒。For example, brazing of copper can likewise have the consequence that the components involved in the connection are heated considerably (in particular, above 400° C.) due to its considerable thermal energy input. This can cause combustible materials to burn.

例如，銅之軟焊可具有下列缺點，一方面，該連接的剪切強度會低於需求，及另一方面，在軟焊料的情況中，交替的溫度負載會導致該金屬去混合及因此該連接脆化。此可導致該連接損壞。再者，軟焊料具有下列缺點，它們具有該連接比例如純銅明顯還大的傳遞阻力。軟焊料連接的進一步缺點在於低機械疲勞強度，其時常僅存在於最高大約120 ℃。此連接對抗酸性媒質之抗腐蝕性亦經常不足。For example, soldering of copper can have the disadvantage that, on the one hand, the shear strength of the connection can be lower than required, and on the other hand, in the case of soft solder, alternating temperature loads can cause the metal to demix and thus the Connections are brittle. This can cause damage to the connection. Furthermore, soft solders have the disadvantage that they have a significantly greater transfer resistance for the connection than eg pure copper. A further disadvantage of soft solder connections is the low mechanical fatigue strength, which is often present only up to about 120°C. Corrosion resistance of this connection against acidic media is also often insufficient.

在黏接特別是導電構件諸如例如銅構件期間，時常有電傳遞阻力受該黏合相當大程度的負面影響之缺點。就該連接之機械強度來說，該機械需求總是無法由該導電黏合滿足。此亦係足夠的機械強度時常僅存在於最高溫度範圍僅120 ℃之情況。特別是，此可使得其無法在溫暖或熱環境中使用及/或使用熱媒質。During bonding in particular of electrically conductive components such as eg copper components, there is often the disadvantage that resistance to electrical transfer is negatively affected by the bonding to a considerable extent. As far as the mechanical strength of the connection is concerned, the mechanical requirement cannot always be met by the conductive adhesive. This is also the case that sufficient mechanical strength is often only present in the highest temperature range of only 120°C. In particular, this can make it impossible to use in warm or hot environments and/or use thermal media.

在螺鎖及鉚接的情況中，該等組件必需以特別精確的方式連結在一起。再者，該螺絲釘或鉚釘連接所需要的孔洞及組裝時常導致整體架構之視覺及機械外觀的視覺減損。再者，就架構來說，需要保證預先知曉欲進行連接的精確位置。因此，長度未界定的構件之使用性可更困難或要防止。再者，在此等連接的情況中，時常會於構件間有餘隙。由於毛細作用，濕氣可進入該餘隙及隨後可發生腐蝕。該腐蝕可損害該連接。該連接之電及/或熱傳遞阻力亦可增加。再者，用於螺絲釘或鉚釘的孔洞可在該連接之區域中造成洩漏。此可使得將此連接使用於容器或壓力系統，例如，特別在需要額外的密封手段中更困難。In the case of screw locking and riveting, these components must be joined together in a particularly precise manner. Furthermore, the holes and assembly required for the screw or rivet connection often result in a visual impairment of the visual and mechanical appearance of the overall structure. Furthermore, in terms of architecture, it is necessary to ensure that the precise location to be connected is known in advance. Thus, the usability of components of undefined length may be more difficult or prevented. Furthermore, in the case of such connections, there is often a play between the components. Due to capillary action, moisture can enter this clearance and subsequent corrosion can occur. The corrosion can damage the connection. The electrical and/or thermal transfer resistance of the connection can also be increased. Furthermore, holes for screws or rivets can cause leaks in the area of the connection. This can make it more difficult to use this connection for a vessel or pressure system, for example, especially where additional sealing means are required.

發明概要Summary of Invention

由彼著手進行，本發明之目標為解決或至少減輕與先述技藝相關連所討論的工藝問題。特別是，本目的為呈現出一種用以將第一構件連接至第二構件的方法及連接元件；及亦一種二個連接在一起的構件之配置，在此情況中，一連接係或已經以特別可信賴及簡單的方式於該等構件間形成，該連接係特別機械穩定且具有特別好的導電及/或熱性。Proceeding from there, it is an object of the present invention to solve or at least alleviate the process problems discussed in connection with the prior art. In particular, the object is to present a method and connecting element for connecting a first member to a second member; and also an arrangement of two connected members, in which case a connection is or has been A particularly reliable and simple way to form between these components, the connection is particularly mechanically stable and has particularly good electrical and/or thermal properties.

該目標係按照本專利的獨立項之構形藉由其方法、連接元件及配置達成。其進一步優良的細部係在各別提出的附屬項中詳細指明。各別在專利請求項中詳細指明之構形可以任何想要的技藝權宜方式彼此結合，及可藉由來自該說明之強調本發明的進一步設計變體之解釋事實來補充。This objective is achieved according to the configuration of the independent item of this patent by its method, connecting elements and arrangement. Further fine details thereof are specified in the respective proposed appendix. The configurations respectively specified in the patent claims may be combined with each other in any desired technical expedient and may be supplemented by explanatory facts from this description emphasizing further design variants of the invention.

根據本發明顯現出一種用以將第一構件連接至第二構件的方法。該方法包含： a)提供一連接元件，其中在該連接元件的第一側之第一連接區域上及在該連接元件之與該第一側相對的第二側之第二連接區域上各別具有多重性奈米線，其中在該第一連接區域上的奈米線及在該第二連接區域上的奈米線係自不同材料形成； b)將該第一構件的接觸區域與該連接元件的第一連接區域集結在一起；及 c)將該第二構件的接觸區域與該連接元件的第二連接區域集結在一起。According to the present invention a method for connecting a first member to a second member is presented. The method contains: a) Providing a connecting element with a multiplicity of nanometers on a first connecting region on a first side of the connecting element and on a second connecting region on a second side of the connecting element opposite the first side, respectively rice wires, wherein the nanowires on the first connection area and the nanowires on the second connection area are formed from different materials; b) bringing together the contact area of the first member and the first connection area of the connection element; and c) Bringing together the contact area of the second component and the second connection area of the connection element.

該第一構件及該第二構件較佳為電子構件，諸如例如，半導體構件、電腦晶片、微處理器或印刷電路板。該第一構件及/或該第二構件較佳為至少部分具導電及/或熱性。The first and second components are preferably electronic components such as, for example, semiconductor components, computer chips, microprocessors or printed circuit boards. The first member and/or the second member are preferably at least partially conductive and/or thermal.

在本文所使用的意義中，導電及/或熱性係呈現在金屬中，諸如例如銅，其通常指為「導電」或相等地指為「導電地」或「導熱」或「導熱地」。特別是，通常視為電及/或熱絕緣之材料於此不意欲視為具導電及/或熱性。In the sense used herein, electrical conductivity and/or thermal properties are present in metals such as, for example, copper, which are commonly referred to as "electrically conductive" or equivalently "conductively" or "thermally" or "thermally." In particular, materials that are generally considered to be electrically and/or thermally insulating are not intended to be considered conductive and/or thermal herein.

所描述的方法不限於應用在電子設備領域中。根據所描述的方法，例如，其亦可用於欲裝配在壁或底座(作為第二構件)上之構件，諸如感應器(作為第一構件)。使用所描述的方法特別可在該第一構件與該第二構件間形成一機械穩定且具導電及/或熱性的連接。因此，所描述的方法可使用在二個構件間需要一相應連接之全部領域中。所描述的方法亦不限於某一尺寸的構件。因此，所描述的方法係合適例如於應用在(微)電子設備領域中或用於呈巨觀程度之相當大的構件之連接。The described method is not limited to application in the field of electronic devices. According to the described method, it can also be used, for example, for components to be mounted on a wall or a base (as a second component), such as an inductor (as a first component). Using the described method, it is possible in particular to form a mechanically stable and electrically and/or thermally connection between the first component and the second component. Therefore, the described method can be used in all fields where a corresponding connection between two components is required. The described method is also not limited to a certain size of components. The described method is therefore suitable, for example, for application in the field of (micro)electronics or for the connection of relatively large components of a macroscopic scale.

該等構件可經由各別的接觸區域連接至該連接元件。特別是，該接觸區域係該各別構件的表面之空間特徵區域。特別佳的是，該接觸區域之特徵為形成該連接。此意謂著該接觸區域與該構件的剩餘表面初始無不同及僅藉由形成該連接來區別，其中該接觸區域係上面形成該連接的區域。於此情況中，該接觸區域初始僅有概念上與該構件的剩餘表面有區別。在該接觸區域的區域中，該連接元件之奈米線可接觸該各別構件。The components can be connected to the connecting element via respective contact areas. In particular, the contact area is a spatial characteristic area of the surface of the respective component. Particularly preferably, the contact area is characterized to form the connection. This means that the contact area is initially indistinguishable from the remaining surface of the component and is distinguished only by the formation of the connection, where the contact area is the area on which the connection is formed. In this case, the contact area is initially only conceptually distinct from the remaining surface of the component. In the area of the contact area, the nanowires of the connecting element can contact the respective component.

在每種情況中，該接觸區域較佳為該各別構件表面之簡單連續形式的區域。再者，該第一構件及/或該第二構件的各別接觸區域可被細分成複數個該各別構件表面之分開的子區域。因此，該接觸區域可包含該各別構件表面之二或更多個分開部分。該接觸區域可具導電及/或熱性或絕緣性。該接觸區域較佳為具導電及/或熱性，如此可形成一導電及/或熱性連接。In each case, the contact area is preferably an area of a simple continuous form of the surface of the respective component. Furthermore, the respective contact areas of the first member and/or the second member may be subdivided into a plurality of separate sub-areas of the respective member surfaces. Thus, the contact area may comprise two or more separate portions of the respective member surface. The contact area may be electrically and/or thermally or insulating. The contact area is preferably electrically and/or thermally conductive, so that an electrically conductive and/or thermal connection can be formed.

較佳的是，該構件係堅硬設計或具有至少一個上面提供有各別的接觸區域之堅硬表面。特別是，此意謂著該構件(或至少該接觸區域)較佳為不可撓。該堅硬構件或接觸區域可根據所描述的方法以特別令人滿意的方式形成連接。例如，若該等構件之一係可撓設計時，該連接可由於該奈米線之負載而斷裂。但是，依確切情況而定，所描述的方法亦可有利地以可撓構件或接觸區域執行。Preferably, the member is of rigid design or has at least one rigid surface on which the respective contact areas are provided. In particular, this means that the member (or at least the contact area) is preferably inflexible. This rigid member or contact area can form a connection in a particularly satisfactory manner according to the described method. For example, if one of the components is of a flexible design, the connection can break due to loading of the nanowire. However, depending on the exact situation, the described method may also advantageously be performed with flexible members or contact areas.

在所描述的方法中，於該第一構件與該連接元件間之連接係經由多重性奈米線形成。In the described method, the connection between the first member and the connecting element is formed via multiplicity of nanowires.

奈米線於此經了解意謂著任何具有線狀形式及尺寸在幾個奈米至幾個微米之範圍內的材料主體。該奈米線可例如具有圓形、橢圓形或多邊形基底面積。特別是，該奈米線可具有六角形基底面積。Nanowire is understood here to mean any body of material having a linear form and dimensions in the range of a few nanometers to a few micrometers. The nanowires can, for example, have a circular, elliptical or polygonal base area. In particular, the nanowires may have a hexagonal base area.

在該第一連接區域上的奈米線及在該第二連接區域上的奈米線係自不同材料形成。該奈米線在該連接元件與構件間形成連接之能力特別受該奈米線的材料影響。依該奈米線的材料而定，該連接可具有不同性質。特別是，該連接之機械強度及導電及/或熱性係受該奈米線的材料影響。由於在二個連接區域上的奈米線係自不同材料形成之事實，可形成二個具有不同性質的連接。因此，該連接元件亦可視為在二個欲連接之構件間的促進者，由於二個構件其它方面將無法彼此連接或僅可困難地連接，其可經由該連接元件彼此連接。取代在二個構件間無法形成或僅可困難地形成之直接連接，可在該第一構件與該連接元件間形成第一連接，及亦在該第二構件與該連接元件間形成第二連接。伴隨著合適地選擇該奈米線及該連接元件之材料，可以比在該第一構件與該第二構件間直接連接更有效之方式形成該第一連接及該第二連接。The nanowires on the first connection region and the nanowires on the second connection region are formed from different materials. The ability of the nanowire to form a connection between the connecting element and the member is particularly affected by the material of the nanowire. Depending on the material of the nanowire, the connection can have different properties. In particular, the mechanical strength and electrical and/or thermal properties of the connection are affected by the material of the nanowire. Due to the fact that the nanowires on the two connection regions are formed from different materials, two connections with different properties can be formed. Therefore, the connecting element can also be regarded as a facilitator between the two components to be connected, which can be connected to each other via the connecting element, since the two components would otherwise not be able to be connected to each other or can only be connected with difficulty. Instead of a direct connection between the two members, which cannot or can only be formed with difficulty, a first connection can be formed between the first member and the connecting element, and a second connection can also be formed between the second member and the connecting element . With proper selection of the materials of the nanowire and the connecting element, the first connection and the second connection can be formed in a more efficient manner than a direct connection between the first member and the second member.

較佳的是，包含於該連接中的全部奈米線係自相同材料形成。較佳的是，此意謂著在該第一連接區域上的全部奈米線係自第一材料形成及在該第二連接區域上的全部奈米線係自與該第一材料不同之第二材料形成。特別佳的是，該奈米線欲完全自導電及/或熱性材料形成。因此，可形成一導電及/或熱性連接。該連接元件較佳為亦具導電及/或熱性。若在該二個連接區域及該連接元件上的奈米線具導電及/或熱性時，遍及該第一構件與第二構件間之連接具導電及/或熱性。Preferably, all nanowires included in the connection are formed from the same material. Preferably, this means that all nanowires on the first connection area are formed from a first material and all nanowires on the second connection area are formed from a different material than the first material. Formed by two materials. Particularly preferably, the nanowires are to be formed entirely from conductive and/or thermal materials. Thus, an electrically conductive and/or thermal connection can be formed. The connecting element is preferably also electrically and/or thermally conductive. If the nanowires on the two connecting regions and the connecting element are conductive and/or thermal, then the connection between the first member and the second member is conductive and/or thermal.

該奈米線較佳為具有長度在100奈米至100微米之範圍內，特別是在500奈米至30微米之範圍內。再者，該奈米線較佳為具有直徑在10奈米至10微米之範圍內，特別是在30奈米至2微米之範圍內。於此，用詞「直徑」係關於圓形基底的面積，其中在偏離此種基底面積之情況中，欲考慮類似的直徑定義。特別佳的是，所使用的全部奈米線皆具有相同長度及相同直徑。The nanowire preferably has a length in the range of 100 nanometers to 100 micrometers, especially in the range of 500 nanometers to 30 micrometers. Furthermore, the nanowire preferably has a diameter in the range of 10 nanometers to 10 micrometers, especially in the range of 30 nanometers to 2 micrometers. Here, the term "diameter" refers to the area of a circular base, wherein in the case of deviations from such base area, a similar definition of diameter is to be considered. It is particularly preferred that all nanowires used have the same length and the same diameter.

在目前所描述的方法中，該等構件係經由連接元件彼此間接地連接。此具有不需要在該等構件之任何上提供奈米線的優點。該奈米線存在於該連接元件上係足夠。特別佳的是，該奈米線不提供在該等構件之接觸區域上而是僅在該連接元件的連接區域上。此可使得該方法之表現較容易，及特別是亦將該方法的應用領域擴大至奈米線之生長不易得到或僅可困難地得到的那些構件。該奈米線之生長亦可與該等構件分別地局部地實現。然而，任擇較佳的是，亦在該第一構件的接觸區域上及/或在該第二構件的接觸區域上提供各別的多重性奈米線。In the presently described method, the components are indirectly connected to each other via connecting elements. This has the advantage of not needing to provide nanowires on any of these components. It is sufficient that the nanowire is present on the connecting element. It is particularly preferred that the nanowires are not provided on the contact areas of the components but only on the connection areas of the connection elements. This can make the performance of the method easier, and in particular also expand the field of application of the method to those building blocks that are not easily or only available with difficulty for the growth of nanowires. The growth of the nanowires can also be achieved locally separately from the components. However, it is optionally preferred to also provide individual multiplicity nanowires on the contact areas of the first member and/or on the contact areas of the second member.

該連接元件較佳為可撓組態。再者，該連接元件較佳為堅硬組態。例如，該連接元件可組裝成實心小金屬板形式。The connecting element is preferably of flexible configuration. Furthermore, the connecting element is preferably of rigid configuration. For example, the connecting element can be assembled in the form of a solid small metal plate.

該連接元件較佳為自塑膠形成。以實施例說明之，該連接元件可自聚合物形成，特別是來自聚碳酸酯、PVC、聚酯、聚乙烯、聚醯胺及/或PET。該連接元件亦可例如自陶瓷材料、矽、氧化鋁或玻璃形成。再者，該連接元件可自不銹鋼、鋁或非鐵金屬形成。亦較佳的是，該連接元件係自包含數種前述提及的材料之複合材料形成。The connecting element is preferably formed from plastic. By way of example, the connecting element can be formed from polymers, in particular from polycarbonate, PVC, polyester, polyethylene, polyamide and/or PET. The connecting element can also be formed, for example, from ceramic materials, silicon, aluminium oxide or glass. Again, the connecting element can be formed from stainless steel, aluminum or non-ferrous metals. It is also preferred that the connecting element is formed from a composite material comprising several of the aforementioned materials.

在步驟a)中，提供一種具有二個連接區域的連接元件。該二個連接區域各者具有多重性奈米線。該第一連接區域係配置在該連接元件的第一側上，及該第二連接區域係配置在該連接元件的第二側上。該連接元件的第一側及第二側係呈互相相對的方式配置。該連接元件的第一側係該連接元件在該連接形成後面對該第一構件之側。該連接元件的第二側係該連接元件在該連接形成後面對該第二構件之側。因此，該等構件可藉由所描述的方法連接，由於在該連接形成後，該二個構件之接觸區域係以互相相對的方式配置在該連接元件的二側上。於此情況中，在二個接觸區域間之間隔僅由該連接元件的厚度及由該奈米線所佔據的空間造成。In step a), a connecting element having two connecting regions is provided. Each of the two connecting regions has multiplicity of nanowires. The first connecting region is arranged on a first side of the connecting element, and the second connecting region is arranged on a second side of the connecting element. The first side and the second side of the connecting element are arranged opposite to each other. The first side of the connecting element is the side of the connecting element of the first member after the connection is made. The second side of the connecting element is the side of the connecting element to the second member after the connection is made. Thus, the components can be connected by the method described, since after the connection is made, the contact areas of the two components are arranged on both sides of the connecting element in a manner opposite to each other. In this case, the spacing between the two contact regions is only caused by the thickness of the connecting element and the space occupied by the nanowire.

該連接元件係在所描述的方法之步驟a)中提供。於此情況中，一方面，該提供要了解為如所描述般組裝之連接元件係提供作為該方法的部分。特別是，該奈米線可特別是藉由電化生長施用至該連接區域作為該方法之部分。但是，另一方面，該提供亦包含使用一已經於連接區域上面提供奈米線的連接元件。因此，可例如自供應者獲得相應製備的連接元件且使用於所描述的方法。在本文所使用的意義中，連接元件之提供亦有以此方式獲得已製備的連接元件。The connecting element is provided in step a) of the described method. In this case, on the one hand, the provision is to be understood that the connecting element assembled as described is provided as part of the method. In particular, the nanowires can be applied to the connection region as part of the method, in particular by electrochemical growth. On the other hand, however, the provision also includes the use of a connecting element in which nanowires have been provided over the connecting region. Accordingly, correspondingly prepared connecting elements can be obtained, for example, from suppliers and used in the described method. In the sense used herein, the provision of connecting elements also means that the prepared connecting elements are obtained in this way.

該奈米線較佳為以該奈米線與各別的連接區域呈實質上垂直(較佳為垂直)之此方式提供在該連接區域上。特別是，在該連接區域上的奈米線整體可指為奈米線草皮(turf)。但是，該奈米線亦可以任何想要的定向提供在該連接區域上。亦可將該連接區域細分成複數個(連接在一起或分開)子區域，其中該奈米線於不同子區域中的定向不同。在此方式中，可實現特別穩定的連接，特別是，其亦能夠以特別令人滿意的方式抵擋剪切力。再者，該奈米線可在該連接區域的不同點處不同地組裝，特別是關於其長度、直徑、材料及密度(奈米線的密度具體指為每單位面積提供多少奈米線)。The nanowires are preferably provided on the connection regions in such a way that the nanowires are substantially perpendicular (preferably perpendicular) to the respective connection regions. In particular, the entirety of the nanowires on this connecting region can be referred to as a nanowire turf. However, the nanowires can also be provided on the connecting region in any desired orientation. The connection region can also be subdivided into a plurality of (connected together or separate) sub-regions, where the nanowires are oriented differently in different sub-regions. In this way, a particularly stable connection can be achieved which, in particular, is also able to withstand shearing forces in a particularly satisfactory manner. Furthermore, the nanowires can be assembled differently at different points in the connection area, especially with regard to their length, diameter, material and density (the density of nanowires specifically refers to how many nanowires are provided per unit area).

特別是，該連接元件可了解為在該第一構件與第二構件間之連接的中間機構。特別是，合適於配置在該等構件之接觸區域間用於該等構件的連接之任何實體物件皆可視為連接元件。In particular, the connecting element can be understood as an intermediate mechanism for the connection between the first component and the second component. In particular, any physical object suitable to be arranged between the contact areas of the components for the connection of the components can be regarded as a connecting element.

特別是，連接區域係該連接元件在該連接元件的各別側上之表面的空間特徵區域。特別是，該連接區域的特徵較佳為形成該連接。此意謂著該連接區域初始與該連接元件之剩餘表面並無不同及僅有藉由形成該連接才可區別，其中該連接區域係上面形成連接之區域。於此情況中，在該連接形成前，該連接區域僅係概念上與該連接元件之剩餘表面有區別。以實施例說明之，區域連接元件的連接區域之特徵可為對各別構件之區域連接係在該連接元件的有限區域上(也就是說，在該連接區域上)形成。In particular, a connecting area is a spatial characteristic area of the surface of the connecting element on the respective side of the connecting element. In particular, the connection region is preferably characterized to form the connection. This means that the connection area is initially indistinguishable from the remaining surface of the connection element and is only distinguishable by forming the connection, wherein the connection area is the area on which the connection is formed. In this case, before the connection is made, the connection area is only conceptually distinguished from the remaining surface of the connection element. By way of example, the connecting regions of a regional connecting element may be characterized as having regional connections to respective components formed on a limited area of the connecting element (that is, on the connecting region).

該連接區域較佳為與相應接觸區域一樣大及特別佳為具有其形式。但是，該接觸區域亦可大於或小於該相應連接區域及/或該接觸區域及相應連接區域具有不同形式。The connection area is preferably as large as the corresponding contact area and particularly preferably has its form. However, the contact area can also be larger or smaller than the corresponding connection area and/or the contact area and the corresponding connection area have different forms.

在每種情況中，該連接區域較佳為該連接元件表面的簡單連續形式之區域。再者，可將該第一連接區域及/或該第二連接區域細分成複數個該連接元件表面之分開的子區域。因此，該連接區域可包含該連接元件表面之二或更多個分開的部分。In each case, the connection area is preferably an area of simple continuous form of the surface of the connection element. Furthermore, the first connection region and/or the second connection region may be subdivided into a plurality of separate sub-regions of the surface of the connection element. Thus, the connection area may comprise two or more separate parts of the surface of the connection element.

在步驟b)及c)中，將該接觸區域與該連接區域集結在一起，也就是說，朝向彼此移動。結果，在該連接區域上的奈米線與該各別的接觸區域接觸。於此情況中，該奈米線連接至該相應接觸區域，由於此，在該構件與該連接元件間形成該相應連接。In steps b) and c), the contact area and the connection area are brought together, that is to say moved towards each other. As a result, the nanowires on the connection regions are in contact with the respective contact regions. In this case, the nanowire is connected to the corresponding contact area, due to which the corresponding connection is formed between the component and the connecting element.

該連接係形成，其中該奈米線特別是其面對該各別的接觸區域之末端係連接至該接觸區域。此連接係以原子程度形成。此原子進行式操作係類似於在燒結期間所發生者。特別是，所獲得的連接可以可防止該連接及/或該已連接在一起的構件腐蝕或該腐蝕至少在該連接之區域中將受限制之此方式對氣體及/或液體緊密。特別是，所形成的連接可視為完全金屬性。所描述的方法亦可指為「克萊特熔接技術」[壓合(hook and loop)熔接]。此表達出該連接係藉由多重性奈米線，因此藉由多重性伸長的髮絲狀結構及藉由加熱獲得。該多重性奈米線可補償該接觸區域之不平坦及崎嶇不平。The connection is formed wherein the nanowire, in particular its end facing the respective contact area, is connected to the contact area. This linkage is formed at the atomic level. This atomic progression is similar to what happens during sintering. In particular, the obtained connection can be tight to gases and/or liquids in such a way that corrosion of the connection and/or the components that are joined together will be prevented or that the corrosion will be limited at least in the area of the connection. In particular, the connection formed can be regarded as completely metallic. The method described may also be referred to as the "Clayt welding technique" [hook and loop welding]. This expresses that the connection is obtained by multiplicity of nanowires, thus by multiplicity of elongated hair-like structures and by heating. The multiplicity of nanowires can compensate for unevenness and bumpiness of the contact area.

由於該奈米線的尺寸係在奈米範圍內，該連接之表面(也就是說，諸如凡得瓦爾力之力量以原子程度作用在其上面的區域)特別大。因此，該連接可具有特別好的導電及/或熱性及/或機械穩定性。對特別好的導電及/或熱性連接來說，該奈米線較佳為自導電及/或熱性材料形成。於此，使用銅、銀、鎳及黃金特別佳。該接觸區域較佳為亦自導電及/或熱性材料形成，特別是使用銅、銀、鎳或黃金。如上述進一步描述，在熔接連接的情況中特別不可能使用銅。由於藉由所描述的方法所獲得之連接的表面大，該連接的導電及/或熱性可特別大。例如，該連接之特別好的導熱度可改良包含該連接的構件之冷卻。特別是，為這目的，使用銅、銀、鎳及黃金的奈米線及/或接觸區域係較佳。Because of the nanowire size in the nanometer range, the surface of the connection (that is, the region on which forces such as Van der Waals forces act on an atomic scale) are particularly large. Thus, the connection can have particularly good electrical and/or thermal and/or mechanical stability. For particularly good conductive and/or thermal connections, the nanowires are preferably formed from conductive and/or thermal materials. Here, copper, silver, nickel and gold are particularly preferably used. The contact area is preferably also formed from electrically conductive and/or thermal materials, in particular using copper, silver, nickel or gold. As further described above, the use of copper is particularly not possible in the case of welded connections. Due to the large surface of the connection obtained by the method described, the electrical and/or thermal properties of the connection can be particularly large. For example, the particularly good thermal conductivity of the connection can improve cooling of the components comprising the connection. In particular, nanowires and/or contact areas of copper, silver, nickel and gold are preferably used for this purpose.

再者，所描述的連接可以特別簡單的方式及沒有工具而形成。其僅需要將欲連接的構件集結在一起。可選擇性進行加熱及行使壓力，但絕非必要。Furthermore, the described connections can be made in a particularly simple manner and without tools. It only requires grouping together the components to be connected. Heating and applying pressure are optional, but not necessary.

該方法步驟a)至c)較佳為以所描述的順序進行，特別是連續。特別是，該步驟a)較佳為在該步驟b)及c)開始前進行。The method steps a) to c) are preferably carried out in the described sequence, in particular consecutively. In particular, the step a) is preferably carried out before the steps b) and c).

若該步驟b)及c)係連續進行，可初始地將該第一構件的接觸區域與該第一連接區域，也就是說，將該第一構件與該連接元件集結在一起(步驟b))。隨後，該按照步驟b)與該第一構件集結在一起之連接元件可以讓該第二構件的接觸區域與該第二連接區域集結在一起之此方式與該第二構件集結在一起(步驟c))。If the steps b) and c) are carried out consecutively, the contact area of the first member and the first connection area can be initially brought together, that is to say, the first member and the connection element are brought together (step b) ). Subsequently, the connecting element brought together with the first member according to step b) can be brought together with the second member in such a way that the contact area of the second member is brought together with the second connecting area (step c) )).

該步驟b)及c)可任擇地以暫時重疊的方式同步或連續地進行。此例如可係將該連接元件保持在該二個構件間及該等構件係自二側朝向該連接元件同步地移動。The steps b) and c) can optionally be performed synchronously or continuously in a temporally overlapping manner. This can for example be that the connecting element is held between the two components and the components are moved synchronously from both sides towards the connecting element.

在該方法的較佳具體實例中，於該第一連接區域上的奈米線及/或於該第二連接區域上的奈米線係自各別的金屬形成。In a preferred embodiment of the method, the nanowires on the first connection region and/or the nanowires on the second connection region are formed from respective metals.

較佳的是，在該第一連接區域上的奈米線及在該第二連接區域上的奈米線係自各別的金屬形成。Preferably, the nanowires on the first connection region and the nanowires on the second connection region are formed from separate metals.

在該第一連接區域上的奈米線較佳為全部自第一金屬形成。在該第二連接區域上的奈米線較佳為全部自第二金屬形成。The nanowires on the first connection region are preferably all formed from the first metal. The nanowires on the second connection region are preferably all formed from the second metal.

特別是由金屬製得的奈米線可形成一機械穩定且導電及/或熱性連接。In particular, nanowires made of metal can form a mechanically stable and conductive and/or thermal connection.

在進一步較佳具體實例中，於該第一連接區域上的奈米線係自該第一構件的接觸區域之材料形成，及/或在該第二連接區域上的奈米線係自該第二構件的接觸區域之材料形成。In a further preferred embodiment, the nanowires on the first connection area are formed from the material of the contact area of the first component, and/or the nanowires on the second connection area are formed from the second connection area. The material of the contact area of the two components is formed.

較佳的是，在該第一連接區域上的奈米線係自該第一構件的接觸區域之材料形成，及在該第二連接區域上的奈米線係自該第二構件的接觸區域之材料形成。Preferably, the nanowires on the first connection area are formed from the material of the contact area of the first member, and the nanowires on the second connection area are formed from the contact area of the second member material formed.

若該奈米線係由與該接觸區域相同之材料構成時，在該奈米線與各別的接觸區域間之連接可以特別令人滿意的方式形成。此係因為該連接係以原子程度形成。在由不同材料製得的主體間之連接可由於該材料之不同晶格結構而更困難。現成的情況為不同晶格常數可使得該連接之形成更困難或可不利地影響所形成的連接之性質。The connection between the nanowire and the respective contact area can be formed in a particularly satisfactory manner if the nanowire is composed of the same material as the contact area. This is because the linkages are formed on an atomic scale. Connections between bodies made of different materials can be more difficult due to the different lattice structures of the materials. It is readily the case that different lattice constants can make the formation of the link more difficult or can adversely affect the properties of the link formed.

若該第一構件與該第二構件係直接經由奈米線彼此連接時，在由不同材料製得之主體間的連接將亦發生所描述的缺點。在該情況中，將需要在由不同材料製得之奈米線間或在奈米線與由不同材料製得的接觸區域間之連接以原子程度形成。在本方法中，這些問題係由該連接元件規避。在該奈米線與該連接元件間之連接非藉由簡單的集結在一起操作而實現。反而，該奈米線係生長到該連接元件上。結果，其可形成非常緊密的黏合。因此，該連接元件可自均勻的材料形成。再者，較佳的是，該連接元件之連接區域係自不同材料，較佳為在每種情況中，自相應奈米線的材料形成。If the first member and the second member are connected to each other directly via nanowires, the described disadvantages will also occur in the connection between bodies made of different materials. In this case, connections between nanowires made of different materials or between nanowires and contact regions made of different materials would need to be formed on an atomic scale. In the present method, these problems are circumvented by the connecting element. The connection between the nanowire and the connecting element is not achieved by a simple clump together operation. Instead, the nanowire is grown onto the connecting element. As a result, it can form a very tight bond. Thus, the connecting element can be formed from a homogeneous material. Furthermore, preferably, the connecting regions of the connecting element are formed from different materials, preferably in each case, from the material of the corresponding nanowire.

該第一連接區域較佳為自第一材料形成，其較佳為與在該第一連接區域上的奈米線材料相應。該第二連接區域較佳為自第二材料形成，其較佳為與在該第二連接區域上的奈米線材料相應。該連接元件較佳為自第三材料形成，且在該第一連接區域的區域中係以該第一材料塗佈及在該第二連接區域的區域中係以該第二材料塗佈。該連接區域係由該塗層形成。該第三材料較佳為具導電及/或熱性。再者，較佳的是，該第三材料具電及/或熱絕緣。在此情況中，該連接元件較佳為在該第一連接區域之子區域與該第二連接區域之子區域間具有各別的局部導電性連接。The first connection region is preferably formed from a first material, which preferably corresponds to the nanowire material on the first connection region. The second connection region is preferably formed from a second material, which preferably corresponds to the nanowire material on the second connection region. The connecting element is preferably formed from a third material and is coated with the first material in the region of the first connecting region and with the second material in the region of the second connecting region. The connection area is formed by the coating. The third material is preferably conductive and/or thermal. Furthermore, preferably, the third material is electrically and/or thermally insulating. In this case, the connecting element preferably has respective locally conductive connections between sub-regions of the first connecting region and sub-regions of the second connecting region.

取代該第三材料，該連接元件亦可包含複數種例如以層配置之不同材料。在此情況中，該連接元件亦可指為混雜帶(hybrid tape)。Instead of the third material, the connecting element can also comprise a plurality of different materials, eg arranged in layers. In this case, the connecting element may also be referred to as a hybrid tape.

再者，該連接元件較佳為自該第一材料形成且在該第二連接區域的區域中係以該第二材料塗佈。進一步選擇，該連接元件較佳為自該第二材料形成且在該第一連接區域的區域中係以該第一材料塗佈。Furthermore, the connecting element is preferably formed from the first material and is coated with the second material in the region of the second connecting region. In a further option, the connecting element is preferably formed from the second material and is coated with the first material in the region of the first connecting region.

在該方法的進一步較佳具體實例中，該第一構件係一印刷電路板，其中該第一構件的接觸區域係自銅形成。In a further preferred embodiment of the method, the first member is a printed circuit board, wherein the contact areas of the first member are formed from copper.

在該方法的進一步較佳具體實例中，該第二構件係一電子構件，其中該第二構件的接觸區域係自銀、鎳及/或黃金形成。In a further preferred embodiment of the method, the second member is an electronic member, wherein the contact region of the second member is formed from silver, nickel and/or gold.

藉由所描述的方法，該電子構件諸如MOSFETs或IGBT模組特別可作為第二構件，其終端係由銀製得作為接觸區域，其係扣緊至作為第一構件且以銅接觸作為接觸區域之印刷電路板。By the method described, the electronic components such as MOSFETs or IGBT modules can be used in particular as second components, the terminals of which are made of silver as contact areas, which are fastened to the first component as the contact area with copper contacts as contact areas. A printed circuit board.

在該方法的進一步較佳具體實例中，該步驟b)及/或步驟c)係於室溫下進行。In a further preferred embodiment of the method, the step b) and/or the step c) are carried out at room temperature.

在該接觸區域與該連接區域間之所描述的連接已經可於室溫下形成。於此情況中，該二個構件較佳為推在一起而形成該連接。較佳的是，於此所使用的壓力係位於5 MPa至200 MPa間之範圍內，特別在15 MPa至70 MPa間之範圍內。20 MPa的壓力係特別佳。The described connection between the contact area and the connection area can already be formed at room temperature. In this case, the two members are preferably pushed together to form the connection. Preferably, the pressure used here is in the range between 5 MPa and 200 MPa, especially in the range between 15 MPa and 70 MPa. A pressure system of 20 MPa is particularly good.

較佳的是，在步驟b)及c)結束後亦不進行加熱。結果，可防止由於溫度效應對該構件之損傷。Preferably, heating is also not performed after steps b) and c). As a result, damage to the member due to temperature effects can be prevented.

在進一步較佳具體實例中，該方法再者包含： d)將至少該接觸區域加熱至溫度至少90 ℃。In a further preferred embodiment, the method further comprises: d) Heating at least the contact area to a temperature of at least 90°C.

該接觸區域係加熱至溫度至少90 ℃(作為最小溫度)，較佳為至溫度至少150 ℃(作為最小溫度)。該溫度較佳為200 ℃。該加熱較佳為執行至溫度至高270 ℃，特別是至高240 ℃。在本具體實施例中，亦較佳的是，該步驟b)及/或c)係於室溫下進行。此意謂著該加熱僅在按照步驟b)及c)形成該連接後進行。藉由該加熱，補強因此形成的連接。The contact area is heated to a temperature of at least 90°C (as a minimum temperature), preferably to a temperature of at least 150°C (as a minimum temperature). The temperature is preferably 200°C. The heating is preferably carried out to a temperature of up to 270°C, in particular up to 240°C. In this specific embodiment, it is also preferred that the steps b) and/or c) are performed at room temperature. This means that the heating takes place only after the connection has been formed according to steps b) and c). By this heating, the connection thus formed is reinforced.

按照步驟d)加熱，該奈米線將以特別令人滿意的方式連接至該接觸區域。相應地，僅加熱該接觸區域係足夠。實務上，伴隨著此種類之加熱，關於是否在該接觸區域、奈米線、連接元件、部分或全部的第一構件及/或部分或全部的第二構件上進行加熱時常無法區別。特別是，若使用導熱材料時，就是此情況。對該連接之形成來說，不需要該元件除了接觸區域外的(協同)加熱，但是此亦無害。因此，按照步驟d)的加熱可執行，特別是該第一構件、第二構件及連接元件係例如於爐中共同加熱時。但是，再者，亦可將熱局部輸入進該連接之區域中，特別是輸入進該接觸區域之區域中。By heating according to step d), the nanowire will be attached to the contact area in a particularly satisfactory manner. Accordingly, it is sufficient to heat only the contact area. In practice, with this kind of heating, it is often indistinguishable as to whether heating is performed on the contact area, nanowire, connecting element, part or all of the first member and/or part or all of the second member. This is especially the case if thermally conductive materials are used. For the formation of the connection, (co-)heating of the element other than the contact area is not required, but this is also harmless. Thus, heating according to step d) can be carried out, in particular when the first component, the second component and the connecting element are heated together, eg in a furnace. Furthermore, however, heat can also be locally introduced into the region of the connection, in particular into the region of the contact region.

對該連接之形成來說，達到所描述的最小溫度一次至少一段短時間係足夠。不需要維持該最小溫度。但是，在步驟d)中進行加熱的溫度較佳為維持至少十秒，較佳為至少30秒。此保證該連接係如想要般形成。原則上，維持該溫度較長時間係無害。For the formation of the connection, it is sufficient that the minimum temperature described is reached at least once for a short period of time. This minimum temperature need not be maintained. However, the temperature at which the heating is performed in step d) is preferably maintained for at least ten seconds, preferably at least 30 seconds. This ensures that the connection is made as intended. In principle, maintaining this temperature for a longer period of time is not harmful.

該步驟b)及c)及亦步驟d)可以至少部分暫時重疊的方式進行。因此，可例如在該步驟b)及c)前或期間進行預熱，該預熱能夠了解為該步驟d)的部分。該第一構件及/或該第二構件的各別接觸區域亦可在該步驟d)前以於按照步驟b)或c)之集結在一起操作期間已經達到形成該連接所需要的溫度之此方式來加熱。特別是，在此方面上，因此，亦可在該步驟b)或c)前開始該步驟d)。在此進行該步驟d)的情況中，因為按照步驟d)所需要的溫度會甚至在該步驟b)或c)結束後至少暫時存在。The steps b) and c) and also step d) can be carried out in an at least partially temporally overlapping manner. Thus, for example, a preheating can be carried out before or during the steps b) and c), which can be understood as part of the step d). The respective contact areas of the first member and/or the second member may also have reached the temperature required to form the connection prior to step d) during the assembly operation according to step b) or c). way to heat. In particular, in this respect, therefore, step d) can also be started before step b) or c). In the case of this step d) being carried out here, since the temperature required according to step d) will be present at least temporarily even after the end of this step b) or c).

藉由所描述的方法，例如，可在二個構件間獲得連接而沒有達到諸如在熔接或硬焊的情況中所具有之溫度量。在本具體實施例中，此可使用的優點為其省掉不需要的加熱。以實施例說明之，因此可避免對該構件之損傷。由於所描述的低溫，亦可排除可燃材料發火。相應地，特別佳的是，該第一構件及/或該第二構件在所描述的方法中之任何點的溫度不超過270 ℃，特別是240 ℃。By the method described, for example, a connection can be obtained between the two components without reaching the amount of temperature such as in the case of welding or brazing. In this particular embodiment, this can be used to the advantage of eliminating unnecessary heating. By way of example, damage to the component can thus be avoided. Due to the described low temperature, ignition of combustible materials can also be excluded. Accordingly, it is particularly preferred that the temperature of the first member and/or the second member at any point in the described method does not exceed 270°C, in particular 240°C.

在該方法的進一步較佳具體實例中，該第一構件與第二構件至少於該加熱的一部分期間對著該連接元件以至少5 MPa，特別是至少15 MPa及/或至多200 MPa之壓力推壓，特別是70 MPa。此特別可以該二個構件係朝向彼此推進，同時該連接元件係配置在該二個構件間來執行。In a further preferred embodiment of the method, the first member and the second member are pushed against the connecting element with a pressure of at least 5 MPa, in particular at least 15 MPa and/or at most 200 MPa during at least a part of the heating pressure, especially 70 MPa. This can be carried out in particular that the two components are pushed towards each other, while the connecting element is arranged between the two components.

較佳的是，所使用的壓力係位於5 MPa至200 MPa間之範圍內，特別在15 MPa至70 MPa間之範圍內。20 MPa的壓力特別佳。Preferably, the pressure used is in the range between 5 MPa and 200 MPa, in particular in the range between 15 MPa and 70 MPa. A pressure of 20 MPa is particularly good.

該壓力較佳為至少在溫度超過其具體指出的下限之時間內大於所指示出下限。在此方面上，該奈米線及接觸區域二者因此至少於該時間內曝露至相應壓力及相應溫度。結果，該連接可藉由壓力及溫度之作用形成。The pressure is preferably greater than the indicated lower limit at least for the time that the temperature exceeds its specified lower limit. In this regard, both the nanowire and the contact region are thus exposed to the corresponding pressure and the corresponding temperature for at least this time. As a result, the connection can be formed by the effect of pressure and temperature.

在該方法的進一步較佳具體實例中，該第一連接區域及該第二連接區域係以互相相對的方式組裝。In a further preferred embodiment of the method, the first connecting region and the second connecting region are assembled in a manner opposite to each other.

該第一連接區域及該第二連接區域較佳為彼此平行地配置。The first connection area and the second connection area are preferably arranged parallel to each other.

在本具體實施例中，該連接元件可配置在二個欲連接之構件間。於此情況中，(除了形成該連接外)該連接元件全然達成該接觸區域係配置成不直接彼此毗連，而是特別是彼此間隔開該連接元件之材料厚度。該接觸區域相對於彼此之定向仍然未由該連接元件影響。In this specific embodiment, the connecting element can be disposed between two components to be connected. In this case, (in addition to forming the connection) the connection elements fully achieve the contact areas which are arranged not directly adjoining each other, but in particular spaced apart from each other by the material thickness of the connection elements. The orientation of the contact areas relative to each other remains uninfluenced by the connecting element.

再者，例如，該第一連接區域及該第二連接區域亦可提供在該連接元件之各別的特別是平坦的表面之不同場所處。在此情況下，該第一構件可在該等位置之第一位置處連接至該連接元件，及該第二構件可在該等位置之第二位置處連接至該連接元件。Furthermore, for example, the first connection area and the second connection area can also be provided at different locations on the respective, in particular flat, surfaces of the connection element. In this case, the first member can be connected to the connecting element at a first position of the positions, and the second member can be connected to the connecting element at a second position of the positions.

在該方法的進一步較佳具體實例中，該第一構件及該第二構件係彼此扣緊的半導體構件。In a further preferred embodiment of the method, the first member and the second member are semiconductor members that are fastened to each other.

在此具體實例中，該連接元件較佳為自電絕緣的第三材料形成、在該第一連接區域的區域中係以導電第一材料塗佈及在該第二連接區域的區域中係以導電第二材料塗佈。該等連接區域係藉由該等塗層形成。該第一連接區域與該第二連接區域較佳為以製造出各別連接區域的子區域彼此電絕緣之此方式結構化。較佳的是，該連接元件在該連接元件之頂端側與底部側間具有局部導電連接。因此，該第一連接區域的子區域可經由局部連接以導電方式連接至該第二連接區域的子區域。此可使用來接觸式連接該半導體構件之接觸。該子區域可組裝成導體軌道形式且可經由其分配訊號。In this embodiment, the connection element is preferably formed from an electrically insulating third material, coated in the region of the first connection region with a conductive first material and in the region of the second connection region with a A conductive second material is applied. The connecting regions are formed by the coatings. The first connection region and the second connection region are preferably structured in such a way that the sub-regions producing the respective connection region are electrically insulated from each other. Preferably, the connecting element has a locally conductive connection between the top side and the bottom side of the connecting element. Thus, the sub-regions of the first connection region can be electrically conductively connected to the sub-regions of the second connection region via local connections. This can be used to contact-connect the contacts of the semiconductor component. The sub-regions can be assembled in the form of conductor tracks and signals can be distributed therethrough.

藉由因此形成的連接元件，半導體構件諸如半導體晶片、微控制器、RAMs或DRAMs可經扣緊及同步地接觸式連接。以實施例說明之，因此，第一DRAM可作為第一構件而例如經由簡單的奈米線連接來連接至一外罩的基座。藉由所描述的方法，第二DRAM可作為第二構件而扣緊至該第一DRAM。位於該DRAMs間之連接元件較佳為按規格尺寸切割，使得除了該第一DRAM外，其亦可扣緊至該外罩的基座。該連接元件較佳為亦使用於訊號分配，特別是用於該第二DRAM。因此，該第二DRAM的接觸可連接至該第一連接區域之彼此電絕緣的子區域。在其它方面電絕緣連接元件中，各別的局部導電連接使得因此在該連接元件之頂端側上形成的導體軌道可選擇性經由在該連接元件的底部側上之彼此電絕緣的導體軌道來連接至在該外罩之基座上的接觸。該第二DRAM的接觸亦可經由各別的局部導電連接直接連接至該第一DRAM的接觸。進一步DRAMs可以類似於該第二DRAM的方式扣緊。以實施例說明之，因此可堆疊及接觸式連接10個DRAMs。By means of the connecting elements thus formed, semiconductor components such as semiconductor chips, microcontrollers, RAMs or DRAMs can be contact-connected via a snap and synchronously. By way of example, therefore, the first DRAM can be connected as a first member to the base of a housing, eg via a simple nanowire connection. By the method described, the second DRAM can be fastened to the first DRAM as a second member. The connecting elements between the DRAMs are preferably cut to size so that in addition to the first DRAM, they can also be fastened to the base of the housing. The connection element is preferably also used for signal distribution, especially for the second DRAM. Thus, the contacts of the second DRAM can be connected to sub-regions of the first connection region that are electrically insulated from each other. In a further aspect of the electrically insulating connecting element, the respective local electrically conductive connection is such that the conductor tracks formed on the top side of the connecting element can thus be selectively connected via conductor tracks which are electrically insulated from each other on the bottom side of the connecting element to contact on the base of the housing. The contacts of the second DRAM can also be directly connected to the contacts of the first DRAM via respective local conductive connections. Further DRAMs can be fastened in a manner similar to the second DRAM. By way of example, 10 DRAMs can thus be stacked and contact-connected.

已顯現出作為進一步態樣者係一種用以將第一構件連接至第二構件的連接元件。該連接元件在該連接元件的第一側之第一連接區域上及在該連接元件之與該第一側相對的第二側之第二連接區域上具有各別的多重性奈米線。在該第一連接區域上的奈米線及在該第二連接區域上的奈米線係自不同材料形成。What has emerged as a further aspect is a connecting element for connecting a first member to a second member. The connecting element has respective multiplicity of nanowires on a first connecting region on a first side of the connecting element and on a second connecting region on a second side of the connecting element opposite the first side. The nanowires on the first connection region and the nanowires on the second connection region are formed from different materials.

上述進一步描述的方法之特別的優點及設計特徵可應用及可轉移至所描述的連接元件，及反之亦然。The particular advantages and design features of the methods further described above are applicable and transferable to the described connecting elements, and vice versa.

在較佳的具體實例中，該連接元件係膜狀組態。In a preferred embodiment, the connecting element has a membrane-like configuration.

該膜狀組態經了解意謂著該連接元件所具有的厚度非常小於該連接元件在剩餘方向上之程度。在較佳的具體實例中，該連接元件具有厚度至多5毫米。較佳的是，該連接元件之厚度位於0.05毫米至5毫米間之範圍內，特別是在0.1毫米至1毫米間之範圍內。The film-like configuration is understood to mean that the connecting element has a thickness that is much less than that of the connecting element in the remaining direction. In a preferred embodiment, the connecting element has a thickness of at most 5 mm. Preferably, the thickness of the connecting element is in the range between 0.05 mm and 5 mm, in particular in the range between 0.1 mm and 1 mm.

再者，該連接元件較佳為條狀組態。在此具體實例中，該連接元件之第一側及第二側，後者位於相反側，係該長條的二個表面，其相關於全部其它表面(其由於該長條之材料厚度而產生)具有相當較大的表面積。Furthermore, the connecting element is preferably in a strip configuration. In this embodiment, the first side and the second side of the connecting element, the latter being on opposite sides, are the two surfaces of the strip, which are relative to all other surfaces (which arise from the material thickness of the strip) has a relatively large surface area.

該長條材料可例如以捲筒形式提供。於此情況中，該奈米線可已經提供在該長條材料上及例如由保護漆保護。在使用該連接元件前，可移除該保護漆及因此曝露出該奈米線。可自該捲筒分離出該長條材料之各別需要的部分以便使用。The elongated material may be provided, for example, in roll form. In this case, the nanowires can already be provided on the elongated material and protected, for example, by a protective varnish. Before using the connecting element, the protective paint can be removed and thus the nanowires exposed. Individually desired portions of the strip of material can be separated from the roll for use.

在本具體實施例中，該連接元件亦可指為「連接帶」及特別是指為「克萊特熔接帶」[壓合熔接帶]。In the present embodiment, the connecting element may also be referred to as a "connection tape" and in particular as a "Clayt fusion tape" [press-fit fusion tape].

在進一步較佳具體實例中，該連接元件係至少部分具導電及/或熱性。In a further preferred embodiment, the connecting element is at least partially conductive and/or thermal.

特別是，在此具體實例中，所形成的連接可具有特別好的導電及/或熱性。In particular, in this particular example, the connections formed can have particularly good electrical and/or thermal properties.

再者，該第一連接區域及第二連接區域較佳為彼此電絕緣。Furthermore, the first connection region and the second connection region are preferably electrically insulated from each other.

在任何情況中，該第一連接區域及該第二連接區域意欲視為彼此電絕緣，其中若在該第一連接區域與第二連接區域間之電阻係於下列條件下使用四點測量法測量時，其係至少100 kΩ：室溫、空氣濕度20%、於固定電壓下測量(也就是說，非為交流電壓)、在該第一連接區域上及在該第二連接區域上以各別的電極測量、該電極以1平方公分的面積接觸該各別的連接區域。In any event, the first connection area and the second connection area are intended to be considered electrically insulated from each other, where the electrical resistance between the first connection area and the second connection area is measured using a four-point measurement method under the following conditions , it is at least 100 kΩ: room temperature, air humidity 20%, measured at a fixed voltage (that is, not an AC voltage), on the first connection area and on the second connection area with separate Measured by the electrode, the electrode contacts the respective connection area with an area of 1 cm2.

若該連接區域係彼此電絕緣時，可在該接觸區域間形成一電絕緣但是機械穩定及亦選擇性導熱的連接。較佳的是，在該第一連接區域與第二連接區域間之區域中的連接元件材料之比電阻在室溫下係至少105 Ωm，較佳為至少108 Ωm。If the connection regions are electrically insulated from each other, an electrically insulating but mechanically stable and also selectively thermally conductive connection can be formed between the contact regions. Preferably, the specific resistance of the connecting element material in the region between the first connecting region and the second connecting region is at least 10 5 Ωm, preferably at least 10 8 Ωm at room temperature.

對該連接元件材料所描述的比電阻規格係關於在固定電壓下測量。當施加交流電壓時，特別可依該交流電壓之頻率而獲得不同結果。The specific resistance specifications described for this connection element material relate to measurements at a fixed voltage. When an alternating voltage is applied, different results can be obtained in particular depending on the frequency of the alternating voltage.

所描述之至少105 Ωm，較佳為至少108 Ωm的值係與該連接元件材料相關。廣泛多種材料的比電阻可在專題文獻之例如表格中獲得。於此，參照此等規格。若該連接元件始終係自特別的材料形成，該連接元件之材料於此欲使用的比電阻係在該專題文獻中對該特別材料所具體指出的值。此定義意謂著排除非由該材料而是例如由該連接元件之形式所產生的全部效應。若該連接元件係由不同材料構成，則該各別材料的比電阻可自專題文獻查明，且該連接元件的材料，也就是說，該材料的組成物之總比電阻可查明。若所使用的材料之比電阻值無法在該專題文獻中找到時，該值可藉由測量查明。The described values of at least 10 5 Ωm, preferably at least 10 8 Ωm are related to the connection element material. Specific resistances for a wide variety of materials are available in monographs such as tables. Here, reference is made to these specifications. If the connecting element is always formed from a particular material, the specific resistance of the material of the connecting element to be used here is the value specified for that particular material in the monograph. This definition is meant to exclude all effects not caused by the material but eg by the form of the connecting element. If the connecting element is composed of different materials, the specific resistance of the respective material can be ascertained from the monograph, and the material of the connecting element, that is, the total specific resistance of the composition of the material, can be ascertained. If the specific resistance value of the material used cannot be found in the monograph, the value can be determined by measurement.

若該連接元件係自第三材料形成及在該第一連接區域的區域中係以第一材料塗佈及在該第二連接區域的區域中係以第二材料塗佈時，可達成在該連接區域間之電絕緣，其中該第三材料係電絕緣。在此情況中，該第一材料及第二材料可具導電性。因此，該金屬奈米線可在各別的相同材料之連接區域上生長，然而電絕緣係由該第三材料達成。該連接元件在該第一連接區域與該第二連接區域間之區域內較佳為自陶瓷材料形成。If the connecting element is formed from a third material and is coated with the first material in the region of the first connecting region and with the second material in the region of the second connecting region, this can be achieved in the Electrical isolation between connection regions, wherein the third material is electrically insulating. In this case, the first material and the second material may be conductive. Thus, the metal nanowires can be grown on the respective connecting regions of the same material, however the electrical isolation is achieved by the third material. The connecting element is preferably formed from a ceramic material in the region between the first connecting region and the second connecting region.

已顯現出作為進一步態樣者係一種配置，其包含： -一第一構件，其係藉由多重性奈米線在一連接元件的第一側上之第一連接區域處連接至該連接元件；及 -一第二構件，其係藉由多重性奈米線在該連接元件之與該第一側相對的第二側上之第二連接區域處連接至該連接元件。A configuration that has emerged as a further aspect includes: - a first member connected to a connecting element by a multiplicity of nanowires at a first connecting region on a first side of the connecting element; and - a second member connected to the connecting element by means of multiplicity nanowires at a second connecting region of the connecting element on a second side of the connecting element opposite the first side.

在該第一連接區域上的奈米線及在該第二連接區域上的奈米線係自不同材料形成。The nanowires on the first connection region and the nanowires on the second connection region are formed from different materials.

上述進一步描述的方法及連接元件之特別優點及設計特徵可應用及可轉移至所描述的配置。該配置較佳為由所描述的方法製造。該連接元件較佳為如所描述般組裝。The particular advantages and design features of the methods and connecting elements described further above are applicable and transferable to the described configurations. The arrangement is preferably made by the method described. The connecting elements are preferably assembled as described.

較佳實施例之詳細說明DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

圖1顯示出一種用以將第一構件2連接至第二構件3之方法。所使用的參考標號係與圖2相關。該方法包含： a)提供一連接元件6，其中在該連接元件6的第一側10之第一連接區域7上及在該連接元件6之與該第一側10相對的第二側11之第二連接區域8上具有各別的多重性奈米線1； b)將該第一構件2的接觸區域4與該連接元件6的第一連接區域7集結在一起；及 c)將該第二構件3的接觸區域5與該連接元件6的第二連接區域8集結在一起。FIG. 1 shows a method for connecting the first member 2 to the second member 3 . The reference numerals used are related to FIG. 2 . The method contains: a) A connecting element 6 is provided, wherein on the first connecting region 7 of the first side 10 of the connecting element 6 and the second connecting region on the second side 11 of the connecting element 6 opposite the first side 10 8 with respective multiplicity of nanowires 1; b) bringing together the contact area 4 of the first component 2 with the first connection area 7 of the connection element 6; and c) Bringing together the contact area 5 of the second component 3 and the second connection area 8 of the connection element 6 .

該奈米線1係自不同材料形成。在本文所描述的實施例中，於該第一連接區域7上之奈米線1係自銅形成，及在該第二連接區域8上之奈米線1係自銀形成。該第一構件2係一印刷電路板及該第二構件3係一電子構件，諸如MOSFET或IGBT模組。The nanowires 1 are formed from different materials. In the embodiment described herein, the nanowires 1 on the first connection region 7 are formed from copper, and the nanowires 1 on the second connection region 8 are formed from silver. The first component 2 is a printed circuit board and the second component 3 is an electronic component, such as a MOSFET or IGBT module.

該步驟b)及/或c)較佳為在室溫下進行。再者，該方法可包含下列由圖1的虛線框指示出之選擇性步驟： d)將至少該接觸區域4、5加熱至溫度至少150 ℃。The steps b) and/or c) are preferably carried out at room temperature. Furthermore, the method may include the following optional steps indicated by the dashed box in FIG. 1: d) Heating at least the contact area 4, 5 to a temperature of at least 150°C.

圖2顯示出可由圖1之方法所獲得的配置9。該配置9包含一第一構件2，其係藉由在該連接元件6的第一側10上之第一連接區域7處的多重性奈米線1連接至該連接元件6。再者，該配置9包含一第二構件3，其係藉由在該連接元件6之與該第一側10相對的第二側11上之第二連接區域8處的多重性奈米線1連接至該連接元件6。為這目的，該第一構件2及該第二構件3具有各別的接觸區域4、5。FIG. 2 shows the configuration 9 obtainable by the method of FIG. 1 . The arrangement 9 comprises a first member 2 which is connected to the connecting element 6 by means of the multiplicity nanowire 1 at the first connecting region 7 on the first side 10 of the connecting element 6 . Furthermore, the arrangement 9 comprises a second member 3 by means of the multiplicity of nanowires 1 at the second connection region 8 on the second side 11 of the connection element 6 opposite the first side 10 connected to this connecting element 6 . For this purpose, the first component 2 and the second component 3 have respective contact areas 4 , 5 .

該奈米線1係自不同材料形成，如相關於圖1所描述。The nanowires 1 are formed from different materials, as described in relation to FIG. 1 .

該連接元件6係膜狀組態。該連接元件6的厚度係至多5毫米。該連接元件6的厚度在圖2中可認定為該連接元件6在垂直方向上之程度。The connecting element 6 has a membrane-like configuration. The thickness of the connecting element 6 is at most 5 mm. The thickness of the connecting element 6 can be identified in FIG. 2 as the extent of the connecting element 6 in the vertical direction.

圖3顯示出來自圖2的配置9之連接元件6的第一具體實例。該第一連接區域7係自與在該第一連接區域7上的奈米線1之材料相應的第一材料12形成。該第二連接區域8係自與在該第二連接區域8上的奈米線1之材料相應的第二材料13形成。該連接元件6係自第三材料14形成及在該第一連接區域7的區域中係以該第一材料12塗佈及在該第二連接區域8的區域中係以該第二材料13塗佈。FIG. 3 shows a first embodiment of the connecting element 6 from the arrangement 9 of FIG. 2 . The first connection region 7 is formed from a first material 12 corresponding to the material of the nanowire 1 on the first connection region 7 . The second connection region 8 is formed from a second material 13 corresponding to the material of the nanowire 1 on the second connection region 8 . The connecting element 6 is formed from a third material 14 and is coated with the first material 12 in the region of the first connecting region 7 and with the second material 13 in the region of the second connecting region 8 cloth.

圖4顯示出來自圖2的配置9之連接元件6的第二具體實例。於此情況中，該連接元件6係自第一材料12形成及在該第二連接區域8的區域中係以該第二材料13塗佈。第一連接區域7係不由塗層而是由位於圖4的底部處之第一材料12的側形成。FIG. 4 shows a second embodiment of the connecting element 6 from the arrangement 9 of FIG. 2 . In this case, the connecting element 6 is formed from the first material 12 and is coated with the second material 13 in the region of the second connecting region 8 . The first connection region 7 is formed not by the coating but by the side of the first material 12 at the bottom of FIG. 4 .

參考標號之表列 1:奈米線 2:第一構件 3:第二構件 4:第一構件的接觸區域 5:第二構件的接觸區域 6:連接元件 7:第一連接區域 8:第二連接區域 9:配置 10:第一側 11:第二側 12:第一材料 13:第二材料 14:第三材料list of reference signs 1: Nanowire 2: The first component 3: Second component 4: Contact area of the first member 5: Contact area of the second member 6: Connecting elements 7: The first connection area 8: Second connection area 9: Configuration 10: First side 11: Second side 12: The first material 13: Second material 14: Third material

將根據下列圖更詳細地討論本發明及其工藝領域。該等圖顯示出特別佳的範例性具體實例，但是本發明不受限於此。特別要指出的是，該等圖及特別是所闡明的比例僅為示意。在該等圖中示意每種情況下： 圖1顯示出根據本發明之用以連接二個構件的方法之闡明； 圖2顯示出根據本發明之按照圖1的方法彼此連接之二個構件的配置之闡明； 圖3顯示出來自圖2的配置之連接元件的第一具體實例；及 圖4顯示出來自圖2的配置之連接元件的第二具體實例。The invention and its field of technology will be discussed in more detail with reference to the following figures. The figures show particularly preferred exemplary embodiments, but the invention is not limited thereto. In particular, the figures and in particular the illustrated proportions are merely schematic. Each situation is illustrated in these figures: Figure 1 shows an illustration of a method for connecting two components according to the present invention; FIG. 2 shows an illustration of the arrangement of two components connected to each other according to the method of FIG. 1 according to the invention; Figure 3 shows a first embodiment of a connecting element from the configuration of Figure 2; and FIG. 4 shows a second embodiment of a connecting element from the configuration of FIG. 2 .

1:奈米線 1: Nanowire

2:第一構件 2: The first component

3:第二構件 3: Second component

4:第一構件的接觸區域 4: Contact area of the first member

5:第二構件的接觸區域 5: Contact area of the second member

6:連接元件 6: Connecting elements

7:第一連接區域 7: The first connection area

8:第二連接區域 8: Second connection area

9:配置 9: Configuration

10:第一側 10: First side

11:第二側 11: Second side

Claims (11)

一種用以將第一構件連接至第二構件的方法，其包含： a)提供一連接元件，其中在該連接元件的第一側之第一連接區域上及在該連接元件之與該第一側相對的第二側之第二連接區域上具有各別的多重性奈米線，其中在該第一連接區域上的奈米線及在該第二連接區域上的奈米線係自不同材料形成； b)將該第一構件的接觸區域與該連接元件的第一連接區域集結在一起；及 c)將該第二構件的接觸區域與該連接元件的第二連接區域集結在一起。A method for connecting a first member to a second member, comprising: a) providing a connecting element with respective multiplicities on a first connecting area on a first side of the connecting element and on a second connecting area on a second side of the connecting element opposite the first side nanowires, wherein the nanowires on the first connection region and the nanowires on the second connection region are formed from different materials; b) bringing together the contact area of the first member and the first connection area of the connection element; and c) Bringing together the contact area of the second component and the second connection area of the connection element. 如請求項1之方法，其中在該第一連接區域上的奈米線及/或在該第二連接區域上的奈米線係自各別的金屬形成。The method of claim 1, wherein the nanowires on the first connection region and/or the nanowires on the second connection region are formed from respective metals. 如請求項1及2之任一項的方法，其中在該第一連接區域上的奈米線係自該第一構件之接觸區域的材料形成及/或在該第二連接區域上的奈米線係自該第二構件之接觸區域的材料形成。The method of any one of claims 1 and 2, wherein nanowires on the first connection region are formed from material of the contact region of the first member and/or nanowires on the second connection region The wire is formed from the material of the contact area of the second member. 如請求項1至3之任一項的方法，其中該第一構件係一印刷電路板，及其中該第一構件的接觸區域係自銅形成。The method of any one of claims 1 to 3, wherein the first member is a printed circuit board, and wherein the contact areas of the first member are formed from copper. 如請求項1至4之任一項的方法，其中該第二構件係一電子構件，及其中該第二構件的接觸區域係自銀、鎳及/或黃金形成。The method of any one of claims 1 to 4, wherein the second member is an electronic member, and wherein the contact area of the second member is formed from silver, nickel and/or gold. 如請求項1至5之任一項的方法，其再包含： d)將至少該接觸區域加熱至溫度至少90 ℃。The method of any one of claims 1 to 5, further comprising: d) Heating at least the contact area to a temperature of at least 90°C. 如請求項1至6之任一項的方法，其中該第一構件及該第二構件係彼此扣緊的半導體構件。The method of any one of claims 1 to 6, wherein the first member and the second member are semiconductor members that are fastened to each other. 一種用以將第一構件連接至第二構件的連接元件，其中該連接元件在該連接元件的第一側之第一連接區域上及在該連接元件之與該第一側相對的第二側之第二連接區域上具有各別的多重性奈米線，及其中在該第一連接區域上的奈米線及在該第二連接區域上的奈米線係自不同材料形成。A connecting element for connecting a first member to a second member, wherein the connecting element is on a first connecting region of a first side of the connecting element and on a second side of the connecting element opposite the first side The second connecting region has respective multiplicity of nanowires, and wherein the nanowires on the first connecting region and the nanowires on the second connecting region are formed from different materials. 如請求項8之連接元件，其中該連接元件係膜狀組態。The connecting element of claim 8, wherein the connecting element is a film-like configuration. 如請求項8或9之連接元件，其中該連接元件的厚度係至多5毫米。A connecting element as claimed in claim 8 or 9, wherein the thickness of the connecting element is at most 5 mm. 一種配置，其包含： 一第一構件，其係藉由在一連接元件的第一側上之第一連接區域處的多重性奈米線連接至該連接元件；及 一第二構件，其係藉由在該連接元件之與該第一側相對的第二側上之第二連接區域處的多重性奈米線連接至該連接元件； 其中在該第一連接區域上的奈米線及在該第二連接區域上的奈米線係自不同材料形成。A configuration that contains: a first member connected to a connecting element by multiplicity nanowires at a first connecting region on a first side of the connecting element; and a second member connected to the connection element by a multiplicity of nanowires at a second connection region on a second side of the connection element opposite the first side; The nanowires on the first connecting region and the nanowires on the second connecting region are formed from different materials.
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